JP2007287895A - Electron-beam drawing apparatus, electron beam tester, and electron beam microscope - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electron beam drawing apparatus or electron beam tester and an electron beam microscope which enable a high speed and high accuracy electron beam deflection. <P>SOLUTION: The drawing apparatus comprises a means for matching the impedance of deflection electrodes in a vacuum chamber 101, this matching means is a pair or a plurality of resistors disposed with the center at a transmitting means around a terminator of the transmitting means, or a tubular resistor, and further is a shield electrode disposed between the terminator of the transmitting means and the electrodes to adjust the shield electrode and the electrodes of a deflector. It has a temperature controller for holding constant the temperatures of the transmitting means, the impedance matching means and the deflector, while the transmitting means has a coaxial structure and its outer conductor is used for a heat conducting medium and enclosed with a metal. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an electron beam application apparatus capable of high-speed and high-accuracy beam deflection, specifically, an electron beam drawing apparatus, an electron beam inspection apparatus, an electron beam microscope, and the like.

  Examples of the electron beam application apparatus include an electron beam drawing apparatus in semiconductor lithography, an electron beam semiconductor inspection apparatus, and an electron beam microscope. In particular, in the semiconductor manufacturing / inspection process, it is required to improve the deflection speed of the electron beam in order to improve the throughput. For this reason, it is necessary for the deflector to transmit a high-frequency electrical signal. Here, the deflector is an electrostatic deflector for changing the position of the electron beam, a blanking deflector used for turning on / off the electron beam, or the like. In order to transmit a high frequency, it is necessary to match the impedance through the entire transmission system. However, since it is necessary to expose the metal electrode of the deflector (hereinafter referred to as the deflection electrode) with respect to the electron beam, the deflection electrode has an open end with an almost infinite impedance. It has been difficult to achieve impedance matching of the deflection electrode.

  On the other hand, USP 4445041 discloses a device in which a deflection electrode has a structure of a parallel line type transmission means as a device for realizing high-speed electron beam blanking. By connecting the upper and lower deflection electrodes, this creates an antiparallel current flow between the upper and lower electrodes, thereby eliminating the eddy current action and preventing reflection at the electrode portion. Furthermore, in Japanese Patent No. 3057042, the deflecting electrode and its counter electrode have a coaxial structure, impedance matching is performed, and eddy current action generated in the surrounding metal casing is also removed.

U.S. Patent No. 4445041 Japanese Patent No. 3057042

  As described above, in the electron beam application apparatus, it is difficult to achieve impedance matching between the transmission means and the deflection electrode. FIG. 2 shows a signal waveform observed at the deflection electrode when a high-frequency blanking signal is applied to the deflection electrode. When the impedance matching of the deflection electrode is not achieved with respect to the input blanking deflection signal waveform 200, for example, a waveform distortion 202 like the deflection signal waveform 201 of FIG. 2 occurs and a response delay of about several ns occurs. When transmitting a high-frequency signal of 1 GHz or more, the response delay as seen in the waveform distortion 202 gives a serious defect to the position accuracy of the electron beam during deflection.

Furthermore, even if impedance matching is performed, in a multistage deflector having a small spatial distance to a complicated adjacent electrode, the upper and lower integrated structure of the two-stage deflection electrodes or the deflection electrode and the counter electrode are integrated. It is difficult to manufacture a deflector having a complicated structure.
Therefore, it is necessary to realize a deflector having impedance matching and a simple structure.

  In the present invention, the electron optical system provided in the electron beam application apparatus has a deflector including an electrode to which a deflection signal is applied, and a signal transmission means and a deflection signal source for supplying the deflection signal to the electrode, The problem is solved by adopting a structure in which the impedance matching means between the electrodes is constituted by a resistor disposed at the terminal end of the signal transmission means. In this case, the signal generator is disposed outside the vacuum casing and supplies a deflection signal to the electrodes via the wall of the vacuum casing. The resistor arranged at the transmission means terminal is arranged in the vacuum casing.

  Since the terminal portion of the mechanism for performing impedance matching is in the vacuum casing, it is not necessary to route wiring outside the vacuum casing. Therefore, the structure is simplified as compared with the prior art, and manufacture and assembly are facilitated. For this purpose, it is preferable to configure the terminal portion using a resistor. Further, by performing impedance matching with a resistor, it is possible to accurately transmit a signal from the deflection signal source to the deflector electrode. The impedance matching means may be a pair of resistors or a plurality of resistors arranged around the terminal portion of the transmission means with the transmission means as the center. Alternatively, a cylindrical resistor may be used.

  As the impedance matching means, a shield electrode disposed between the terminal of the transmission means and the electrode can be used instead of the resistor. In this case, by providing a means for adjusting the distance between the shield electrode and the electrode of the deflector, the impedance is made variable to achieve impedance matching between the signal transmission means, the deflection signal source, and the electrode. Theoretically, by adjusting this interval, a capacitor component that cancels the inductance component of the resistor is given, and an optimum deflector is provided for each frequency.

  The impedance matching means described above may include signal transmission means, impedance matching means, and temperature control means for each component of the deflector.

  With the above deflector, the structure and manufacture are simple, and impedance matching among the deflector electrode, the signal transmission means, and the deflection signal source can be performed, and the deflection position of the electron beam can be controlled at high speed and with high accuracy. Further, in the electron beam drawing apparatus, since the blanking time can be controlled with high resolution, the dimensional accuracy can be improved by controlling the dose amount accurately.

  According to the present invention, there is provided an electron beam drawing apparatus, an electron beam inspection apparatus, and an electron beam microscope that can be deflected at high speed and with high accuracy by using an electron beam deflection electrode that has an easy structure and is matched in impedance with a transmission means. Can be provided.

Specific embodiments of the invention described above will be described below.
(Example 1)
FIG. 1 shows an embodiment of an electron beam drawing apparatus of the present invention. The electron beam drawing apparatus turns on / off the electron gun 103 that generates the electron beam 102, the lenses 104a and 104b that converge the electron beam, and the electron beam 102 inside the vacuum casing 101 that is evacuated by the vacuum pump 110. A blanking deflector 105 that is a deflector for performing the operation, a blanking stop 106, and an electrostatic deflector 112 that is a deflector for controlling the position of the electron beam. The blanking deflector 105 and the electrostatic deflector 112 are configured by n pairs of opposed electrodes with the electron beam as the center. Here, n is a natural number. Further, in order to drive them, a lens signal generator 107, a blanking signal generator 108, a scanning signal generator 109, and the like are provided. When blanking the electron beam, the blanking deflection signal generated from the blanking signal generator 108 is applied to the blanking deflector 105 via the blanking signal transmission cable 118 serving as signal transmission means. By this deflection signal, the electron beam 102 becomes a deflected electron beam 116a. The deflected electron beam 116 a is blocked by the blanking diaphragm 106 and does not pass below the blanking diaphragm 106. When scanning the electron beam, the deflection signal generated from the scanning signal generator 109 is applied to the electrostatic deflector 112 via the scanning signal transmission cable 120 serving as signal transmission means. By this deflection signal, it becomes a deflected electron beam 116b, reaches a sample stage 116 on which a sample 113 such as a wafer or a mask and an electron beam detector 115 are mounted, and can draw an arbitrary pattern on the sample. . The stage control unit 121 controls the sample stage 116. The CPU 122 controls and controls the vacuum pump 110, the lens signal generator 107, the blanking signal generator 108, the scanning signal generator 109, and the stage control unit 121.

  The blanking signal generator 108 and the scanning signal generator 109 generate high frequency signals. Therefore, it is necessary to match impedances in the blanking signal generator 108 and the blanking signal transmission cable 118, and in the scanning signal generator 109 and the scanning signal transmission cable 120, respectively. Here, the blanking signal transmission cable 118 and the scanning signal transmission cable 120, which are signal transmission means, use high-frequency coaxial cables. A coaxial cable has a coaxial structure, and an insulator surrounds an inner conductor that transmits a high-frequency signal, and an outer conductor is provided outside the insulator. The characteristic impedance of a coaxial cable is determined by the dielectric constant and thickness of the insulator. In particular, the transmission cable inside the vacuum housing 101 is a coaxial cable such as a semi-rigid cable that has an outer conductor exposed to prevent charge-up by an electron beam and is surrounded by metal so as to completely cover the insulator. Used. Further, in order to impedance-match the electrodes of the blanking deflector 105 and the electrostatic deflector 112, the outer conductors of the coaxial structure of the transmission means and the respective electrodes are connected by termination resistors 117 and 119, respectively.

  FIG. 2 shows a signal observed by the blanking deflector 105 when the blanking deflection signal generated by the blanking signal generator 108 is applied to the blanking deflector 105 via the blanking signal transmission cable 118. The waveform is shown. When the impedance matching of the deflection electrode is not achieved with respect to the input blanking deflection signal waveform 200, for example, a waveform distortion 202 like the deflection signal waveform 201 of FIG. 2 occurs and a response delay of about several ns occurs. When transmitting a high-frequency signal of 1 GHz or more, the response delay as seen in the waveform distortion 202 gives a serious defect to the position accuracy of the electron beam during deflection. On the other hand, when the termination resistor 117 is connected, the deflection signal waveform 203 at the termination is obtained, and the waveform is stabilized in about 1 ns. However, the signal waveform in FIG. 2 is a waveform standardized so that the output value is constant with and without the termination resistor.

となる。ここで、Ｚを終端箇所のインピーダンス、Ｒは終端抵抗値、Ｌは終端抵抗におけるインダクタンス、Ｃは電極および終端抵抗箇所におけるコンダクタンス成分である。終端抵抗値Ｒに対して、終端箇所のコンダクタンスＣおよびインダクタンスＬが十分小さく、無視できる場合、終端箇所のインピーダンスＺは終端抵抗値Ｒのみで決まる。しかし、実際は終端抵抗の配線などに存在するインダクタンス成分により、終端抵抗器を接続しても２０４ａ、２０４ｂのような波形リンギングが発生する。高精度な偏向を可能にするためには、このリンギングを抑える必要がある。 The impedance of the termination point when the inner conductor and outer conductor of the coaxial cable are connected with a termination resistor can assume an equivalent circuit model,

It becomes. Here, Z is the impedance at the termination point, R is the termination resistance value, L is the inductance at the termination resistor, and C is the conductance component at the electrode and the termination resistance point. When the conductance C and inductance L at the termination point are sufficiently small with respect to the termination resistance value R and can be ignored, the impedance Z at the termination point is determined only by the termination resistance value R. However, in practice, due to an inductance component present in the wiring of the termination resistor, waveform ringing like 204a and 204b occurs even if the termination resistor is connected. In order to enable high-precision deflection, it is necessary to suppress this ringing.

  FIG. 3 shows an embodiment showing the main part of the blanking portion of the electron beam drawing apparatus of the present invention. What is common to FIG. 1 uses reference numerals. In the vacuum casing 101 whose inside is evacuated, the electron beam 102 becomes an electron beam 116 a deflected by a voltage applied between the blanking electrodes 306 and 312. The blanking electrodes 306 and 312 are combined to form a blanking deflector. The deflected electron beam 116 a is blocked by the blanking stop 106. A blanking deflection signal is generated by the blanking signal generator 108, and the blanking signal is applied to the blanking electrode 306 via a blanking signal transmission cable 118 serving as a transmission means. The blanking signal transmission cable 118 includes an atmospheric side coaxial cable 302, a vacuum introduction hermetic seal 303, and an in-vacuum coaxial cable 304, which are connected by a high frequency connector 311 represented by a BNC, SMA terminal or the like. . Here, an example using an SMA terminal is shown. In order to prevent charge-up by the electron beam, the coaxial cable 304 in the vacuum uses a coaxial cable such as a semi-rigid cable in which the outer conductor is exposed and the metal is surrounded so as to completely cover the insulator. The inner conductor of the in-vacuum coaxial cable 304 is connected to the blanking electrode 306, and the outer conductor of the in-vacuum coaxial cable 304 and the blanking electrode 306 are connected in parallel by termination resistors 307a and 307b. A pair of termination resistors 307a and 307b are arranged around the termination portion around the coaxial cable 304 in the vacuum.

  FIG. 4 is an enlarged view of the connection between the vacuum coaxial cable 304 and the blanking electrode 306 in FIG. The code | symbol of a common location is unified. The inner conductor 404 a of the in-vacuum coaxial cable 304 is connected to the blanking electrode 306. There is a shield block 403 so as to sandwich the outer conductor 404c of the in-vacuum coaxial cable 304. The shield block 403 is fixed to the blanking electrode 306 with a shield block fixing screw 401 with the insulator 402 interposed therebetween. The shield block 403 prevents the outer conductor 404c of the vacuum coaxial cable 304 from directly contacting the blanking electrode 306. The outer conductor 404c and the blanking electrode 306 are connected in parallel at the soldering point 408 by two termination resistors 307a and 307b. When the blanking deflection signal is applied to the blanking electrode 306 via the inner conductor 404a of the in-vacuum coaxial cable 304, feedback currents 407a and 407b flow in the terminating resistors 307a and 307b, respectively. When the inductance component of the termination resistor is large, the feedback currents 407a and 407b do not flow instantaneously with respect to signal application, and waveform ringing occurs. Further, the feedback currents 407a and 407b themselves generate a magnetic field around them, and an eddy current is generated in the inner conductor 404a of the coaxial cable 304 in the vacuum, thereby causing waveform ringing. In order to suppress the inductance component, it is effective to shorten the wiring length of the termination resistor.

Regarding the termination resistance values of the plurality of termination resistors, it is desirable that the following relationship holds. When the output impedance of the blanking signal generator 108, the characteristic impedance of the atmospheric side coaxial cable 302, and the in-vacuum coaxial cable 304 are Z0, the resistance values R1, R2,.

1 / Z0 ≒ 1 / R1 + 1 / R2 + ... + 1 / Rn (Formula 2)
And,

R1 ≒ R2 ≒ ... ≒ Rn (Formula 3)
(The error of ≈ is within 5%), and it is desirable to arrange these terminal resistors at equal intervals of (360 / n) degrees.

FIG. 5 is a cross-sectional view showing the inside of the terminating resistor from the blanking electrode side when n = 4. The same reference numerals as in FIG. 4 are used for the coaxial cable inner conductor 404a, insulator 404b, and outer conductor 404c of the transmission means. Four termination resistors 501, 502, 503, and 504 are arranged every 90 degrees (360/4 degrees) around the inner conductor 404a. When the deflection signal is transmitted to the inner conductor 404a and applied to the blanking electrode, feedback currents I ₁ 505, I ₂ 506, I ₃ 507, and I ₄ 508 are generated. At this time, magnetic fluxes H ₁ 509, H ₂ 510, H ₃ 511, and H ₄ 512 are generated for each current. When the resistance values of the terminating resistors 501, 502, 503, and 504 satisfy (Equation 3),
(Formula 4)
_{I 1 ≒ I 2 ≒ I 3} ≒ I 4 ≒ I 0/4
(Formula 5)
_{H 1 ≒ H 2 ≒ H 3} ≒ H 4 ≒ H 0/4
It becomes. I ₀ and H ₀ are a current and an induced magnetic field generated when they are connected by one resistor, respectively. In FIG. 5, the current amounts I ₁ 505, I ₂ 506, I ₃ 507, and I ₄ 508 flowing through the terminal resistors are 1/4 of the current amount I _{0 in} the case of one resistor. The magnetic flux penetrating the conductor 104c is also ¼. Further, in FIG. 5, magnetic fluxes H ₁ 505, H ₂ 506, H ₃ 507, and H ₄ 508 cancel each other by the opposing magnetic fields in the inner conductor 404a, and the magnetic flux penetrating the inner conductor 404a becomes almost zero. The larger n is, the larger the effect of canceling the magnetic field is, and n is infinite, that is, the case where a resistor on a cylinder is used is most ideal.

  FIG. 6 shows an output waveform 601 in the blanking deflector when four termination resistors are used, with respect to the output waveform 203 in the blanking deflector when one termination resistor is used. The reference numerals in common with FIG. 2 are unified. The waveform 601 is free from waveform ringing.

  FIG. 7 is an example showing a main part in an electrostatic deflection portion of the electron beam drawing apparatus of the present invention. The reference numerals common to those in FIG. 1 are unified. In the vacuum casing 101 whose inside is evacuated, the electron beam 700 incident on the deflector becomes an electron beam 116 b deflected by a voltage applied between the electrostatic deflection electrodes 705 and 701. The electrostatic deflection electrodes 705 and 701 are combined to form an electrostatic deflector. A scanning deflection signal is generated by the scanning signal generator 109, and the scanning deflection signal is applied to the electrostatic deflection electrode 705 via the scanning signal transmission cable 120 serving as a transmission unit. The scanning signal transmission cable 120 includes an atmospheric side coaxial cable 702, a vacuum introduction hermetic seal 703, and an in-vacuum coaxial cable 704. The inner conductor of the in-vacuum coaxial cable 704 is connected to the electrostatic deflection electrode 705, and the outer conductor of the in-vacuum coaxial cable 704 and the electrostatic deflection electrode 705 are connected by a terminating resistor 119. The outer conductor of the in-vacuum coaxial cable 704 is connected to the shield electrode 706. The position of the shield electrode 706 relative to the electrostatic deflection electrode 705 can be changed by the micrometer head 712. The conductance C between the electrostatic deflection electrode 705 and the shield electrode 706 depends on the spatial distance between both electrodes. Since the inductance L in the termination resistor 119 exists in the term that contributes to the impedance Z at the termination point in (Equation 1), the conductance C is adjusted by changing the spatial distance between the two poles by the micrometer head 712. By canceling the inductance L, it is possible to effectively cancel the term depending on the frequency given to the impedance Z.

According to the present invention, the structure is simple, and the signal from the deflection signal source can be accurately transmitted to the deflector electrode. As a result, manufacturing is easy, the deflection position of the electron beam can be controlled with high speed and high accuracy, and the blanking time can be controlled with high resolution, so that high accuracy of position and dimension control during electron beam writing is realized. The
(Example 2)
FIG. 8 shows an embodiment of an electrostatic deflector having a temperature controller in the present invention. The same reference numerals are used for reference numerals common to FIG. A scanning deflection signal is generated by the scanning signal generator 109, and the scanning deflection signal is applied to the electrostatic deflection electrode 705 via the scanning signal transmission cable 120 serving as a transmission unit. Here, the scanning signal transmission cable 120 includes an atmospheric side coaxial cable 702, a vacuum introduction hermetic seal 802, a high frequency connector 811, and a vacuum coaxial cable 704. When the deflection signal is applied to the deflection signal electrode 705 via the inner conductor of the vacuum coaxial cable 704, a feedback current 808 flows through the termination resistor 119. The terminating resistor 119 generates heat due to the feedback current 808. When the termination resistance value changes due to this heat, the output voltage of the deflection signal changes accordingly. The change in the output voltage of the deflection signal changes the deflection sensitivity of the electron beam, and gives a serious defect to the position accuracy of the electron beam. In order to reduce a temperature change due to heat generated in the terminating resistor 119, the temperature control medium 805 is passed from the temperature control unit 804 to the temperature control unit 801 surrounding the atmosphere-side high-frequency coaxial cable 104, and then the temperature control medium 805 is passed. Return to the temperature control unit 804 to circulate. In this embodiment, a cooling structure is used, and cooling water is used as the temperature control medium 805. As the heat conduction medium to the inside of the vacuum casing 101, the outer side coaxial cable 702, the high frequency connector 811, and the outer conductor of the in-vacuum coaxial cable 704 were used. The vacuum hermetic seal 802 has an insulator 803 having a low thermal conductivity in order to prevent heat from diffusing and affecting other control systems via the vacuum casing 101. The heat generated in the terminating resistor 119 is efficiently transmitted to the outside by the outer conductor of the in-vacuum coaxial cable 704.

FIG. 9 shows a cross-sectional view in the case where the periphery of the outer conductor of the coaxial cable as the transmission means is surrounded by metal. The coaxial cable includes an inner conductor 903, an insulator 904, and an outer conductor 905. The outer conductor 905 was surrounded by a metal 906 to increase the heat conduction efficiency of the outer conductor. In this embodiment, copper is used as the metal having a high thermal conductivity, but other materials are also effective as long as the material has a high thermal conductivity. As a result, it is possible to efficiently suppress the heat generation of the termination resistor and to control the deflection of the electron beam with high speed and high accuracy.
(Example 3)
FIG. 10 shows an embodiment of the electron beam inspection apparatus of the present invention. The electron beam inspection apparatus according to the present embodiment includes an electron optical system formed inside a vacuum casing 1001 evacuated by a vacuum pump 1010, an electron optical system control unit that controls the electron optical system, and an electron optical system. An information processing unit that inspects the sample by processing the output signal that is output.

  The electron optical system includes an electron gun 1003 that generates an electron beam 1002, lenses 1004a and 1004b that converge the electron beam, a blanking deflector 1005 that is a deflector for turning the electron beam 1002 on and off, a blanking stop 1006, An electrostatic deflector 1012 which is a deflector for controlling the position of the electron beam, an E × B deflector 1021 for deflecting a secondary electron trajectory from the sample, and a charge control electrode 1011 for controlling secondary electrons generated from the sample. Etc.

  The electron beam 1002 is decelerated by the retarding voltage applied to the sample stage 1016 immediately before entering the sample 1013 such as a wafer or a mask, and enters the sample 1013. At this time, secondary electrons are generated in the sample, and a part of the generated secondary electrons is incident on the sample again by the charge control voltage of the charge control electrode 1011. Most of the generated secondary electrons are accelerated by the retarding voltage applied to the sample stage 1016, deflected by the E × B deflector 1021, and guided to the secondary electron detector 1023 according to the secondary electron trajectory 1022. It is burned. The amount of secondary electrons guided to the secondary electron detector 1023 is increased or decreased according to the generation efficiency of secondary electrons on the sample and the charged state, and a secondary electron image reflecting the state of the sample can be obtained.

  The electron optical system control unit for driving these includes a lens signal generator 1007, a blanking signal generator 1008, a scanning signal generator 1009, an E × B deflection signal generator 1015, a charging control voltage generator 1026, and the like. . The electron beam blanking and scanning deflection signal transmission means are a blanking signal transmission cable 1018 and a scanning signal transmission cable 1020. The electron beam blanking and scanning means are the same as those of the electron beam drawing apparatus.

  The stage controller 1025 controls the sample stage 1016 and applies a retarding voltage. The vacuum pump 1010, the lens signal generator 1007, the blanking signal generator 1008, the scanning signal generator 1009, the E × B deflection signal generator 1015, the stage controller 1025, and the charge control voltage generator 1026 are controlled and controlled. Information processing unit 1022. At the same time, the information processing unit 1024 processes and calculates the input pixel signal of the secondary electron image to inspect the electron beam irradiation area. For this reason, the information processing unit includes a CPU for calculating pixel signals and storage means for storing calculation software. Note that the information processing unit 1022 can also have a function of measuring the distance between any two points in the electron beam irradiation region by performing pixel calculation included in the secondary electron image. In this case, length measurement software is stored in the storage means.

At this time, the blanking signal generator 1008 and the scanning signal generator 1009 generate high-speed deflection signals as in the electron beam drawing apparatus. For this reason, it is necessary to match impedances in the blanking signal generator 1008 and the blanking signal transmission cable 1018, and in the scanning signal generator 1009 and the scanning signal transmission cable 1020, respectively. The blanking signal transmission cable 1018 and the scanning signal transmission cable 1020 that are signal transmission means use coaxial cables such as high-frequency semi-rigid cables. Further, in order to impedance-match the electrodes of the blanking deflector 1005 and the electrostatic deflector 1012, the outer conductor of the coaxial structure of the transmission means and the respective electrodes are terminated and connected by terminating resistors 1017 and 1019. Termination resistors 1017 and 1019 achieve impedance matching and realize high-speed and high-accuracy electron beam blanking and scanning. Thereby, the image quality of the acquired secondary electron image is improved, and the inspection performance is improved.
Example 4
Although not shown in particular, the present invention is effective even in a multi-beam electron optical system that irradiates a plurality of beams in both FIG. 1 and FIG.

The figure which shows one Example of this invention. Output voltage waveform of deflection electrode with and without termination resistor. The enlarged view of a blanking part in FIG. FIG. Current and magnetic field flows at the end of four locations. The output voltage waveform of the deflection electrode at the end in four places. The figure which shows one Example of this invention which performs impedance adjustment. The figure which shows one Example of this invention at the time of performing temperature control. Coaxial cable structure that enables high heat conduction. The figure which shows one Example of this invention.

Explanation of symbols

101: Vacuum housing, 102: Electron beam, 103: Electron gun, 104a, 104b: Lens, 105: Blanking deflector, 106: Blanking diaphragm, 107a, 107b: Lens signal generator, 108: Blanking signal generation 109: scanning signal generator 110: vacuum pump 112: electrostatic deflector 113: sample 114: sample stage 115: electron beam detector 116a, 116b: deflected electron beam 117: beam Ranking termination resistor, 118: Blanking signal transmission cable, 119: Electrostatic deflector termination resistor, 120: Scanning signal transmission cable, 121: Stage controller, 122: CPU, 200: Input blanking deflection signal waveform, 201: deflection output waveform without termination resistor, 202: waveform distortion, 203: one-point termination Deflection output waveform, 204a, 204b: waveform ringing, 302: atmospheric side coaxial cable, 303: vacuum hermetic, 304: vacuum coaxial cable, 306: blanking electrode, 307a, 307b: termination resistor, 311: high frequency connector 312: Counter electrode, 401: Shield block fixing screw, 402: Insulator, 403: Shield block, 404a: Inner conductor, 404b: Insulator, 404c: Outer conductor, 407a, 407b: Feedback current, 408: Soldering location 501: Terminating resistor 1, 502: Terminating resistor 2, 503: Terminating resistor 3, 504: Terminating resistor 4, 505: Feedback current flowing through the terminating resistor 1, 506: Feedback current flowing through the terminating resistor 2 507: feedback current flowing through the termination resistor 3, 508: feedback current flowing through the termination resistor 4, 5 9: induction magnetic field in termination resistor 1, 510: induction magnetic field in termination resistor 2, 511: induction magnetic field in termination resistor 3, 512: induction magnetic field in termination resistor 4, 601: four-point termination 700: Electron beam, 701: Counter electrode, 702: Atmospheric side coaxial cable, 703: Vacuum hermetic, 704: In-vacuum coaxial cable, 705: Electrostatic deflection electrode, 706: Shield electrode, 711: For high frequency Connector, 712: Micrometer head, 801: Temperature control medium transmission path, 802: Vacuum hermetic with heat insulation, 803: Heat insulation, 804: Temperature control unit, 805: Temperature control medium, 808: Feedback current, 903: Inside Conductor, 904: insulator, 905: outer conductor, 906: metal for heat conduction, 1001: vacuum casing, 1002: electron beam, 100 3: electron gun, 1004a, 1004b: lens, 1005: blanking electrode, 1006: blanking stop, 1007a, 1007b: lens signal generator, 1008: blanking signal generator, 1009: deflection signal generator, 1010: vacuum Pump, 1011: Charge control electrode, 1012: Electrostatic deflector, 1013: Sample, 1014: Sample stage, 1015: E × B deflection signal generator, 1017: Terminating resistor for blanking deflector, 1018: Blanking signal transmission Cable, 1019: Terminating resistor for electrostatic deflector, 1020: Deflection signal transmission cable, 1021: E × B deflector, 1022: Secondary electron trajectory, 1023: Secondary electron detector, 1024: Information processing unit, 1025: Stage control unit, 1026: charging control voltage generator.

Claims (8)

A sample stage on which a sample is placed, an electron optical system that draws an arbitrary pattern on the sample by irradiating the sample with an electron beam, and a vacuum housing that stores the electron optical system In an electron beam lithography system,
The electron optical system includes a deflector including an electrode for applying a deflection signal to the electron beam,
A signal generator for generating the deflection signal disposed outside the vacuum housing;
Signal transmission means for supplying the deflection signal to the electrode via the vacuum casing;
Impedance matching means for matching the impedance of the electrode with respect to the impedance of the signal generator and the transmission means,
The electron beam drawing apparatus, wherein the impedance matching means includes a resistor disposed at a terminal portion of the signal transmission means. A sample stage on which a sample on which a pattern is formed is placed; an electron optical system that scans an electron beam on the sample, detects secondary electrons generated by the scanning of the electron beam, and outputs a secondary electron signal; In an electron beam measurement apparatus comprising: a vacuum housing for storing the electron optical system; and an information processing apparatus that processes the secondary electron signal and measures a distance between the specimen or a specific position.
The electron optical system includes a deflector including an electrode for applying a deflection signal to the electron beam,
A signal generator for generating the deflection signal disposed outside the vacuum housing;
Signal transmission means for supplying the deflection signal to the electrode via the vacuum casing;
Impedance matching means for matching the impedance of the electrode with respect to the impedance of the signal generator and the transmission means,
The electron beam measuring device, wherein the impedance matching means includes a resistor disposed at a terminal portion of the signal transmission means. The electron beam measurement apparatus according to claim 2,
2. The electron beam measuring apparatus according to claim 1, wherein the impedance matching means is a pair of resistors arranged around a terminal portion of the transmission means with the transmission means as a center. The electron beam measurement apparatus according to claim 2,
The electron beam measuring apparatus according to claim 1, wherein the impedance matching means is a shield electrode disposed between a terminal of the transmission means and the electrode. The electron beam measurement apparatus according to claim 4,
An electron beam measuring apparatus comprising means for adjusting a distance between the shield electrode and the electrode of the deflector. The electron beam measurement apparatus according to claim 2,
An electron beam measuring apparatus, wherein a plurality of the resistors are arranged around the transmission means or are cylindrical resistors. The electron beam measurement apparatus according to claim 2,
An electron beam measurement apparatus comprising temperature control means for the transmission means, the impedance matching means, and the deflector. The electron beam measurement apparatus according to claim 7, wherein
The transmission means has an inner conductor and an outer conductor insulated from the inner conductor by an insulator,
The temperature control means uses the outer conductor as a heat transfer means.

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