JP2007287426A - Image display device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To inhibit elimination of a normal electron source due to elimination of a characteristic-defect electron source. <P>SOLUTION: A video-signal wiring 8 is composed of a linear part 80 and a plurality of protruding parts 81 respectively protruding to the adjacent video-signal wiring 8 side. An electron source 10 is provided to each protruding part 81. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a self-luminous flat panel image display device, and more particularly to an image display device in which thin film electron sources are arranged in a matrix.

  As a self-luminous flat panel display (FPD) having an electron source arranged in a matrix, for example, Patent Document 1 and many prior documents are disclosed.

The self-luminous FPD includes a rear panel including an electron-emitting device as an electron source, a phosphor layer, and an anode that applies an acceleration voltage for projecting electrons emitted from the electron source to the phosphor layer. It has a display panel comprised of a front panel and a frame that seals the opposing internal space of both panels to a predetermined vacuum state.
This display panel is configured by combining a drive circuit.

Each electron source is paired with a corresponding phosphor layer to constitute a unit pixel. Normally, one pixel (color pixel, pixel) is composed of unit pixels of three colors of red (R), green (G), and blue (B). In the case of a color pixel, the unit pixel is also called a sub-pixel (sub-pixel).

The back panel has a back substrate made of an insulating material. The back panel extends in one direction on the back substrate, is arranged in parallel in another direction orthogonal to the one direction, and a plurality of scanning signals are sequentially applied in the other direction. Scanning signal wiring.
On the rear substrate, a plurality of image signal wirings arranged in the one direction so as to extend in the other direction and intersect the scanning signal wirings are provided.
Further, the electron source is provided in the vicinity of each intersection of the scanning signal wiring and the image signal wiring. The electron source and the scanning signal wiring are connected by a feeding electrode, and current is supplied from the scanning signal wiring to the electron source. .

  Patent Document 2 discloses a configuration in which a groove is provided on the upper surface of a glass substrate and a wiring made of a laminated film is formed in the groove.

The distance between the rear panel and the front panel is maintained at a predetermined distance by a member called a partition (spacer) in addition to the frame. This spacer is made of a plate-like body formed of an insulating material such as glass or ceramics or a member having some conductivity, and is usually installed at a position where the operation of the pixel is not hindered for each of the plurality of pixels.
JP 2004-363075 A JP-A-5-283845

21 and 22 are diagrams for explaining an example of the electron source of the prior invention disclosed in Patent Document 1, FIG. 21 (a) is a plan view, and FIG. 21 (b) is an AA of FIG. 21 (a). FIG. 21C is a cross-sectional view taken along the line BB in FIG. 21A, and FIG. 22 is an enlarged view of a main part of FIG. This electron source is a MIM electron source.
21 and 22, SUB1 is a rear substrate, DED is a lower electrode (video signal wiring), INS1 is a protective insulating layer, INS2 is an insulating layer, INS3 is an interlayer insulating film, AED is an upper electrode, and S is a scanning signal wiring ( Upper bus electrode), ELS is an electron source, and this electron source ELS is arranged at substantially the center of the line width on the lower electrode DED. Further, as the interlayer insulating film INS3, for example, silicon oxide, silicon nitride film, silicon or the like can be used.
This interlayer insulating film INS3 is, for example, in the case where there is a pinhole in the protective insulating layer INS1 formed by anodic oxidation, and fills the defect, and the bus electrode S (metal film lower layer MDL and metal film that becomes the scanning signal wiring) The metal film intermediate layer MML serves as a metal film intermediate layer MML between the upper layers MAL to maintain insulation between the three layers). The upper bus electrode S is not limited to the above-described three-layer laminated film, and may be more or less, but the details are disclosed in Patent Document 1 and the like.
The upper bus electrode S serving as the scanning signal wiring is different in the shape of the edge EG1 on the conductive side and the edge EG2 on the non-conductive side of the electron source ELS, and the cross-sectional shape in the thickness direction is asymmetrical on the left and right of the central axis It has a shape.
The metal film lower layer MDL is tapered by taper etching on the conduction side edge EG1, and the metal film lower layer MDL is recessed by under etching on the opposite non-passage side edge EG2, and the metal film intermediate layer MML has a bowl shape. It has a shape to exhibit.
Due to the difference in edge shape, the upper electrode AED is continuously formed from the upper bus electrode S to the electron source ELS1 at the conduction-side edge EG1, whereas the upper electrode AED is a ridge portion at the non-conduction-side edge EG2 portion. The device is separated from each other and is separated from the adjacent electron source ELS2.

In such a configuration, the conductive side edge EG1 and the non-passage side edge EG2 have a complicated production method in which one is under-etching for element isolation and the other is taper etching for contact.
Further, the film thickness of the upper electrode AED is several nm, and in order to ensure conduction with the electron source, a very difficult process of etching the conduction side edge EG1 into a gentle taper shape is required, and the shape of the ridge portion In addition to securing the device, there was a risk of hindering element isolation.

  In addition, a configuration in which a laser beam is irradiated in the vicinity of the non-conducting edge EG2 portion, the upper electrode AED is cut at the portion, and the element is separated regardless of the presence or absence of the flange portion is separately proposed. Further improvement is desired in terms of increase in capital investment and capital investment.

  Further, in the configuration as described above, since the electron source is arranged at substantially the center of the line width on the lower electrode DED, when a defect occurs in each electron source, the wiring is removed when the defective electron source is cut and removed. There is a problem that all the electron sources above become inoperable and a line defect defect occurs on the phosphor screen, resulting in a defect in the display device itself.

  An object of the present invention is to provide an image display device that solves the above-described problems, improves the manufacturing yield, ensures the reliability of element isolation, shortens the manufacturing process, and has excellent display characteristics. .

To achieve the above object, the present invention provides a first signal wiring disposed in a groove extending in one direction and arranged in parallel in another direction orthogonal to the one direction, and extending in the other direction. A second signal wiring lined up in the one direction so as to intersect the first signal wiring; an interlayer insulating film disposed between the second signal wiring and the first signal wiring; In the image display device comprising: an electron source provided in the vicinity of each intersection of the first signal wiring and the second signal wiring; and an upper electrode disposed above the electron source. The signal wiring includes a plurality of protrusions protruding in the direction of the adjacent second signal wiring, and the electron source is disposed in the protrusions.
According to another aspect of the present invention, there is provided a first signal line disposed in a groove extending in one direction and arranged in parallel in another direction orthogonal to the one direction, and the first signal extending in the other direction. A second signal wiring arranged in parallel in the one direction so as to intersect the wiring, an interlayer insulating film disposed between the second signal wiring and the first signal wiring, and the first signal wiring; In the manufacture of an image display device comprising an electron source provided near each intersection of the second signal wiring and an upper electrode disposed above the electron source, the second signal wiring is adjacent to the second signal wiring. A plurality of protruding portions protruding in the second signal wiring direction are provided with a thin portion serving as the electron source, and after the thin portion is anodized, the thin portion extends over the first signal wiring. The upper electrode is continuously formed.

By arranging the electron sources in the protruding portions, even if a defect occurs in each electron source, it is sufficient to cut only the protruding portion where the defective electron source is arranged, and the remaining good electron source. Will not have any adverse effects. Therefore, it is possible to improve the manufacturing yield and realize an image display device with excellent display characteristics.
Moreover, it is possible to ensure reliability of element isolation under a simple manufacturing method without requiring a complicated manufacturing method such as under-etching for element isolation on the one hand and taper etching for contact on the other side as in the past. An image display device having excellent display characteristics can be realized.
Furthermore, the use of a laser beam is not essential for element isolation, and the manufacturing process can be shortened and the capital investment can be reduced.
Furthermore, the reliability of electrical connection can be ensured by using a mask having a specific shape during upper electrode deposition.

  Hereinafter, the present invention will be described in detail with reference to the drawings of the embodiments.

FIG. 1 to FIG. 3 are schematic views for explaining the configuration of an embodiment of an image display device according to the present invention. FIG. 1 (a) is a plan view, FIG. 1 (b) is a side view of FIG. 2 is a cross-sectional view taken along line CC in FIG. 1B, FIG. 3A is a partially enlarged plan view of FIG. 2, and FIG. 3B is taken along line DD in FIG. It is sectional drawing of the front substrate of a part corresponding to sectional drawing and its back substrate.
1 to 3, reference numeral 1 is a rear substrate, 2 is a front substrate, 3 is a frame body, 4 is an exhaust pipe, 5 is a sealing member, 6 is a display area, 7 is a through hole, and 8 is a video signal wiring. , 9 is a scanning signal wiring, 10 is an electron source, 11 is a long groove, 12 is a spacer, 13 is an adhesive member, 14 is an upper electrode, 15 is a phosphor layer, 16 is a BM (black matrix) film for light shielding, and 17 A metal back (anode electrode) made of a metal thin film.
The back substrate and the front substrate 2 denoted by reference numeral 1 are made of glass plates having a thickness of several mm, for example, about 1 to 10 mm.
Both the substrates 1 and 2 have a substantially rectangular shape, and the front substrate 2 is smaller than the rear substrate 1.
Reference numeral 3 denotes a frame having a frame shape. The frame body 3 is made of, for example, a sintered body of frit glass or a glass plate, and is formed into a substantially rectangular shape by itself or a combination of a plurality of members. Is inserted.
The frame 3 is inserted in a peripheral portion between the substrates 1 and 2, and both end surfaces are hermetically bonded to the substrates 1 and 2. The thickness of the frame 3 is set to several mm to several tens mm, and the height thereof is set to a dimension substantially equal to the distance between the substrates 1 and 2.
An exhaust pipe 4 is fixed to the back substrate 1.
5 is a sealing member, and this sealing member 5 is composed of, for example, a low melting point frit glass, for example, PbO: 75-80 wt%, B2 O3: about 10 wt%, others: 10-15 wt%, etc. A glass material including a frit glass of a type is known, and the frame 3 and the substrates 1 and 2 are joined and hermetically sealed.

The display area 6 in the space surrounded by the frame 3, the two substrates 1, 2 and the sealing member 5 is evacuated through the exhaust pipe 4, and maintains a vacuum degree of 10 ⁻⁵ to 10 ⁻⁷ Torr, for example. ing. The exhaust pipe 4 is attached to the outer surface of the rear substrate 1 as described above, and communicates with a through hole 7 formed through the rear substrate 1 so that the exhaust pipe 4 is exhausted after exhausting is completed. Is sealed.

  The video signal wiring indicated by reference numeral 8 extends in one direction (Y direction) on the inner surface of the rear substrate 1 above the scanning signal wiring 9 and is juxtaposed in the other direction (X direction). The video signal wiring 8 is formed by using a metal material as will be described later.

  The video signal wiring 8 has a linear portion 80 extending in the one direction (Y direction) and a plurality of protruding portions 81 protruding from the linear portion 80 in the direction of the adjacent video signal wiring 8. The protrusion 81 is provided with the electron source 10. The protrusions 81 are disposed between the scanning signal lines 9 in the display area 6.

  Further, the end of the linear portion 80 of the video signal wiring 8 passes through the sealing region between the frame 3 and the back substrate 1 from the display region 6 in an airtight manner and extends to the vicinity of the end surface on the long side of the back substrate 1. ing. The video signal wiring 8 has a video signal wiring lead-out terminal 82 at a tip portion outside the sealing region.

The scanning signal wiring indicated by reference numeral 9 described above is disposed inside the long groove 11 below the video signal wiring 8.
The long groove 11 extends in the other direction (X direction) intersecting with the video signal wiring 8, and is provided in parallel in the one direction (Y direction) and is formed in the upper surface of the rear substrate 1.
The scanning signal wiring 9 is formed using silver paste, but other metal materials as described later can also be used. The end of the scanning signal line 9 penetrates the short side sealing region between the frame 3 and the back substrate 1 from the display region 6 in an airtight manner and extends to the vicinity of the short side end surface of the back substrate 1. The scanning signal wiring 9 has a distal end portion outside the sealing region as a scanning signal wiring lead terminal 91.

  The electron source indicated by reference numeral 10 described above is, for example, a MIM type electron source of a kind of electron source disclosed in Patent Document 1, and this electron source 10 is in the vicinity of each intersection of the scanning signal wiring 9 and the video signal wiring 8. The protrusion 81 is provided. The electron source 10 is connected to the scanning signal wiring 9 and the upper electrode 14. This connection structure will be described later. Further, an interlayer insulating film INS is disposed between the video signal wiring 8 and the electron source 10 and the scanning signal wiring 9.

  Here, the video signal wiring 8 is made of, for example, Al or Al-Nd, and the scanning signal wiring 9 is made of, for example, Cr / Al / Cr, Cr / Cu / Cr, or the like.

Next, reference numeral 12 is a spacer, and the spacer 12 is made of a plate-like body formed of an insulating material such as glass or ceramics or a member having some conductivity. It is installed in a position that does not interfere with
The spacer 12 has a specific resistance of about 10 ⁸ to 10 ⁹ Ω · cm, and has a configuration in which the resistance value is unevenly distributed as a whole.
The spacers 12 are substantially parallel to the frame body 3 and are arranged upright every other on the scanning signal wiring 9, and are bonded and fixed to the both substrates 1 and 2 by an adhesive member 13.
The spacer 12 may be bonded and fixed to the substrate only at one end side, and the arrangement is usually set at a position that does not hinder the operation of each pixel.

The dimensions of the spacer 12 are set according to the substrate dimensions, the height of the frame 3, the substrate material, the spacer spacing, the spacer material, etc. Generally, the height is substantially the same as the frame 3 described above, The thickness can be several tens of μm to several mm or less, the length can be about 20 mm to 1000 mm, and even longer, but a practical value is preferably about 80 mm to 300 mm.
The spacer 12 may be bonded and fixed to the substrate only at one end side, and the arrangement is usually set at a position that does not hinder the operation of each pixel.

On the other hand, on the inner surface of the front substrate 2 to which one end side of the spacer 12 is fixed, a phosphor layer 15 for red, green, and blue is disposed in a window section partitioned by a BM (black matrix) film 16 for light shielding. A metal back (anode electrode) 17 made of a metal thin film is provided by, for example, a vapor deposition method so as to cover these to form a phosphor screen.
The metal back 17 is a light reflecting film for reflecting the light emitted to the side opposite to the front substrate 2, that is, the back substrate 1 side, toward the front substrate 2 side to increase the light extraction efficiency, and on the surface of the phosphor particles. It also has a function to prevent electrification.
Further, although the metal back 17 is shown as a surface electrode, it may be a stripe electrode that intersects the scanning signal wiring 9 and is divided for each pixel column.

Examples of the phosphor include Y ₂ O ₃ : Eu and Y ₂ O ₂ S: Eu for red, ZnS: Cu, Al, Y ₂ SiO ₅ : Tb for green, and ZnS for blue. : Ag, Cl, ZnS: Ag, Al, etc. can be used. The phosphor layer 15 has an average particle diameter of phosphor particles of, for example, 4 μm to 9 μm, and a film thickness of, for example, about 10 μm to 20 μm.

Next, FIGS. 4 to 20 are schematic views for explaining the manufacturing process of the image display device of the present invention. Each figure (a) is a plan view, and each figure (b) is an EE line in each figure (a). FIG. 11C and FIG. 17C are cross-sectional views taken along the line (b) of FIG. This electron source is a MIM electron source.
First, as shown in FIG. 4, a plurality of long grooves 11 are formed on the back substrate 1. The long groove 11 extends in the X direction and is juxtaposed in the Y direction. As a method for forming the long groove 11, for example, a physical processing method such as sand blasting or a chemical treatment method using etching with hydrofluoric acid or the like can be used. The depth of the groove is set in consideration of the resistance value of the wiring.

Next, as shown in FIG. 5, for example, a silver paste is embedded in the long groove 11 by printing or squeegee and fired at 400 ° C. to 500 ° C. to form the scanning signal wiring 9. The upper surface of the scanning signal wiring 9 is set to be flush with the upper surface of the rear substrate 1 or slightly protruded.
Next, as shown in FIG. 6, an insulating film INS is formed on substantially the entire upper surface of the back substrate 1 including the scanning signal wiring 9 by sputtering or the like.
For example, silicon oxide, silicon nitride film, silicon, or the like can be used for the insulating film INS.

Next, as shown in FIG. 7, a metal film 20 made of Al—Nd or the like is formed so as to cover substantially the entire surface of the insulating film INS. The metal film 20 is formed by, for example, a sputtering method. The film thickness is, for example, about 300 nm.
Next, a first resist film 21 is applied on the metal film 20 as shown in FIG. The coating pattern of the resist film 21 has a shape including a linear portion 210 and a protruding portion 211 corresponding to the linear portion 80 and the protruding portion 81 of the video signal wiring 8 shown in FIG.
Next, as shown in FIG. 9, the metal film 20 in a portion where the resist film 21 is not applied is removed by, for example, etching, and the remaining metal film 20 is formed into a shape including a linear portion 200 and a protruding portion 201. . After molding, the resist film 21 is removed.

Next, as shown in FIG. 10, a second resist film 22 is applied to a part of the protruding portion 201 of the metal film 20. The application position and area of the resist film 22 are substantially equal to the position and area where the electron source 10 of the above-described embodiment is disposed.
Next, the metal film 20 is anodized with the resist film 22 applied as shown in FIG. 10, and an oxide film layer 20a is formed on the surface of the metal film 20 as shown in FIG. Oxidation layers 200a and 201a are formed on the linear portion 200 and the projecting portion 201, respectively, by this anodic oxidation process, but a non-oxidized thin portion 201b remains on the lower portion where the resist film 22 is applied.
Next, the resist film 22 is removed as shown in FIG. The removal of the resist film 22 exposes the non-oxidized thin portion 201b to a part of the protruding portion 201.
Next, as shown in FIG. 13, a third resist film 23 is applied to the metal film 20 and the surrounding insulating film INS so as to be applied in a substantially rectangular shape.
On the other hand, in this coating range, a hole portion 23a having no resist film 23 is disposed on the insulating film INS at a position corresponding to a terminal portion of a path for connecting the electron source and the scanning signal wiring 9. . The hole portion 23 a is disposed between the protruding portions 201 above the scanning signal wiring 9. The void portion 23a forms a portion where the insulating film INS without the resist film 23 is partially exposed by either a method in which the resist film 23 is not applied in advance or is removed after application.

Next, as shown in FIG. 14, all of the exposed insulating film INS is removed. This removal method is, for example, by dry etching.
As a result, the portions other than the portion covered with the resist film 23, that is, the scanning signal wirings 9, between the scanning signal wirings 9, and the terminal portions 92 in the hole portions 23a are exposed. In particular, the insulating film INS in the hole portion 23a is subjected to taper etching.
Next, as shown in FIG. 15, the resist film 23 is peeled off. Thereby, the linear part 200a and the protrusion part 201a which were anodized, and the non-surface oxidized thin part 201b are respectively exposed.
Next, a fourth resist film 24 is applied so as to cover the opening 92. This is shown in FIG.
Next, with the resist film 24 applied to the opening 92, the thin portion 201b of the protruding portion 201 is anodized to form an oxide film on the surface of the thin portion 201b. This is shown in FIG.
Next, the resist film 24 is removed from the opening 92. This is shown in FIG. In FIG. 18, the linear portion 200a and the protruding portion 201a that have been anodized and the thin portion 201b having an oxide film on the surface are exposed.

Next, a deposition mask MSK is set on the back substrate 1 as shown in FIG. This mask MSK is provided with a square hole MSK1 having a dimension extending from the protruding portion 201 to the opening 92, the remaining portion is substantially closed, and element isolation can be achieved at the same time.
Next, the square hole MSK1 of the mask MSK is set so as to coincide with the opening 92 from the protrusion 201, and the upper electrode 14 is formed by vapor deposition. The material used for the upper electrode 14 is Ir / Pt / Au, which is formed by sequentially vapor-depositing through the mask MSK and performing continuous film formation from the protrusion 201 to the opening 92. FIG. 20 shows the configuration after the upper electrode 14 is formed.
By this film formation, the protruding portion 201 of the video signal wiring 8 and the scanning signal wiring 9 are connected via the upper electrode 14.

Here, as a matter of course, the first to fourth resists may have the same composition.
Through the above steps, the scanning signal wiring 9, the video signal wiring 8, the electron source 10 and the upper electrode 14 on the back substrate 1 are formed.

  In the above embodiments, the structure using the MIM as the electron source is taken as an example, but the present invention is not limited to this, and the same applies to the self-luminous FPD using the various electron sources described above. Is applicable.

FIG. 1A is a schematic view for explaining the configuration of an embodiment of an image display device according to the present invention, FIG. 1A is a plan view, and FIG. 1B is a side view of FIG. It is a schematic cross section which follows the CC line of FIG.1 (b). 3 (a) is a partially enlarged schematic plan view of FIG. 2, FIG. 3 (b) is a schematic cross-sectional view taken along line DD of FIG. 3 (a), and a schematic diagram of the front substrate corresponding to the rear substrate. It is sectional drawing. FIG. 4A is a plan view of the manufacturing process of the image display device according to the present invention, and FIG. 4B is a schematic cross-sectional view taken along line EE of FIG. 5A and 5B are diagrams for explaining a manufacturing process of the image display device according to the present invention, in which FIG. 5A is a plan view, and FIG. 5B is a schematic cross-sectional view taken along line EE of FIG. 6A and 6B are diagrams illustrating a manufacturing process of the image display device according to the present invention, in which FIG. 6A is a plan view, and FIG. 6B is a schematic cross-sectional view taken along line EE in FIG. 7A and 7B are diagrams for explaining a manufacturing process of the image display device according to the present invention, in which FIG. 7A is a plan view, and FIG. 7B is a schematic cross-sectional view taken along the line EE of FIG. FIG. 8A is a plan view illustrating the manufacturing process of the image display device according to the present invention, and FIG. 8B is a schematic cross-sectional view taken along line EE of FIG. FIG. 9A is a plan view illustrating the manufacturing process of the image display device according to the present invention, and FIG. 9B is a schematic cross-sectional view taken along the line EE of FIG. 9A. FIG. 10A is a plan view illustrating the manufacturing process of the image display device according to the present invention, and FIG. 10B is a schematic cross-sectional view taken along the line EE of FIG. 11A and 11B are diagrams illustrating a manufacturing process of the image display device according to the present invention, in which FIG. 11A is a plan view, FIG. 11B is a schematic cross-sectional view taken along line EE of FIG. ) Is an enlarged view of the main part of FIG. FIG. 12A is a plan view illustrating the manufacturing process of the image display device according to the present invention, and FIG. 12B is a schematic cross-sectional view taken along line EE of FIG. FIG. 13A is a plan view and FIG. 13B is a schematic cross-sectional view taken along the line EE of FIG. 13A. FIG. 14A is a plan view illustrating the manufacturing process of the image display device according to the present invention, and FIG. 14B is a schematic cross-sectional view taken along line EE of FIG. 14A. FIG. 15A is a plan view of the image display device according to the present invention, and FIG. 15B is a schematic cross-sectional view taken along the line EE of FIG. FIG. 16A is a plan view illustrating the manufacturing process of the image display device according to the present invention, and FIG. 16B is a schematic cross-sectional view taken along line EE of FIG. FIGS. 17A and 17B are diagrams illustrating a manufacturing process of an image display device according to the present invention, FIG. 17A is a plan view, FIG. 17B is a schematic cross-sectional view taken along line E-E in FIG. These are the principal part enlarged views of the same figure (b). FIG. 18A is a plan view illustrating the manufacturing process of the image display device according to the present invention, and FIG. 18B is a schematic cross-sectional view taken along the line EE of FIG. FIG. 19A is a plan view and FIG. 19B is a schematic cross-sectional view taken along the line EE of FIG. 19A. FIG. 20A is a plan view and FIG. 20B is a schematic cross-sectional view taken along line EE of FIG. 20A. FIG. 21A shows an example of a conventional electron source, FIG. 21A is a plan view, FIG. 21B is a cross-sectional view taken along line AA in FIG. 21A, and FIG. 21C is FIG. It is sectional drawing which follows the BB line of It is a schematic cross section explaining the conventional element isolation.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Back substrate, 2 ... Front substrate, 3 ... Frame body, 4 ... Exhaust pipe, 5 ... Sealing member, 6 ... Display area, 7 ... Through-hole, 8 ... Video signal wiring, 80 ... Video signal wiring linear part, 81 ... Video signal wiring protrusion, 82 ... Video signal wiring lead-out terminal, 9 ... Scanning signal wiring, 91 ... Scanning signal wiring lead terminal, 92 ... Scanning signal wiring opening, 10 ... Electron source, 11 ... Long groove, 12 ... Spacer, 13 ... Adhesive member, 14 ... Upper electrode, DESCRIPTION OF SYMBOLS 15 ... Phosphor layer, 16 ... BM film | membrane, 17 ... Metal back (anode electrode), 20 ... Metal film, 200 ... Metal film linear part, 201 ... Metal film protrusion , 21-24 ... resist film, INS ... insulating film (interlayer insulating film).

Claims (6)

A first signal line disposed in a groove extending in one direction and arranged in the other direction orthogonal to the one direction, and extending in the other direction and intersecting the first signal line A second signal line arranged in parallel in the one direction; an interlayer insulating film disposed between the second signal line and the first signal line; the first signal line and the second signal; A back substrate comprising an electron source provided in the vicinity of each intersection of the wiring, and an upper electrode disposed above the electron source;
A front substrate comprising a phosphor layer provided corresponding to the electron source, and an anode for applying an accelerating voltage so as to direct electrons emitted from the electron source to the phosphor layer;
A frame disposed between the front substrate and the rear substrate and holding the two substrates at a predetermined interval;
An image display device comprising the frame and a sealing member disposed between the front substrate and the rear substrate,
2. The image display device according to claim 1, wherein the second signal wiring includes a plurality of protrusions protruding in a direction of the adjacent second signal wiring, and the electron source is disposed in the protrusions.   The image display device according to claim 1, wherein the protruding portion is provided between the first signal wirings.   The image display device according to claim 1, wherein the first signal wiring is a scanning signal wiring, and the second signal wiring is a video signal wiring. A first signal line disposed in a groove extending in one direction and arranged in the other direction orthogonal to the one direction, and extending in the other direction and intersecting the first signal line A second signal line arranged in parallel in the one direction; an interlayer insulating film disposed between the second signal line and the first signal line; the first signal line and the second signal; A back substrate comprising an electron source provided in the vicinity of each intersection of the wiring, and an upper electrode disposed above the electron source;
A front substrate comprising a phosphor layer provided corresponding to the electron source, and an anode for applying an accelerating voltage so as to direct electrons emitted from the electron source to the phosphor layer;
A frame disposed between the front substrate and the rear substrate and holding the two substrates at a predetermined interval;
A manufacturing method of an image display device comprising the frame and a sealing member disposed between the front substrate and the rear substrate,
The second signal wiring includes a thin portion serving as the electron source at a plurality of protruding portions protruding in the direction of the adjacent second signal wiring, and after the thin portion is anodized, A method of manufacturing an image display device, wherein the upper electrode is continuously formed over a first signal wiring.   The method of manufacturing an image display device according to claim 4, wherein the upper electrode is formed by vapor deposition through a mask having an opening continuous from the thin portion to the first signal wiring. . 6. The method for manufacturing an image display device according to claim 4, wherein the first signal wiring is a scanning signal wiring, and the second signal wiring is a video signal wiring.

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