JP2007286643A - Transflective liquid crystal device and electronic equipment using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a transflective liquid crystal device having no unevenness in a gap between substrates even when a thickness balance of a liquid crystal layer between a transmissive display region and a reflective display region is made appropriate by a layer thickness adjusting layer, and to provide electronic equipment using the device. <P>SOLUTION: In a counter substrate 20 of the transflective liquid crystal device 100, a color filter 241 for transmissive display which is thin and has a wide chromaticity region is formed on a transmissive display region 100c of the lower layer side of a counter electrode 21, and a color filter 242 for reflective display which is thick and has a narrow chromaticity region is formed on a reflective display region 100b. The gap between a TFT array substrate 10 and the counter substrate 20 is controlled by columnar projections 40 formed on the TFT array substrate 10 and a gap material is not distributed between the TFT array substrate 10 and the counter substrate 20. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a transflective liquid crystal device including a reflective display region and a transmissive display region in one pixel, and an electronic apparatus including the transflective liquid crystal device.

  Among various types of liquid crystal devices, those capable of displaying images in both transmissive mode and reflective mode are called transflective liquid crystal devices and are used in every scene.

  Among such transflective liquid crystal devices, in an active matrix transflective liquid crystal device, as shown in FIG. 21, a transparent pixel electrode 9a (first transparent electrode) on the surface, and pixel switching TFT array substrate 10 (first transparent substrate) on which TFT (Thin Film Transistor / Thin Film Transistor) 30 is formed, counter substrate 21 (second transparent electrode) on which counter electrode 21 (second transparent electrode) and color filter 24 are formed (first substrate). 2 transparent substrates) and a liquid crystal layer 50 held between these substrates 10 and 20. Here, the distance between the TFT array substrate 10 and the counter substrate 20 is determined by spraying the gap material 5 having a predetermined particle diameter on the surface of either one of the substrates, and then sealing the TFT array substrate 10 and the counter substrate 20 (see FIG. (Not shown).

  In the liquid crystal device configured as described above, the TFT array substrate 10 is formed with the light reflecting layer 8a constituting the reflective display region 100b in the pixel 100 where the pixel electrode 9a and the counter electrode 21 face each other, and this light reflecting layer 8a. The remaining area (light transmission window 8d) where no is formed is a transmissive display area 100c.

  Accordingly, among the light emitted from the backlight device (not shown) arranged on the back side of the TFT array substrate 10, the light incident on the transmissive display region 100c is the TFT array substrate 101 as indicated by the arrow LB. The liquid crystal layer 50 is incident on the liquid crystal layer 50, is modulated by the liquid crystal layer 50, and then is emitted as transmissive display light from the counter substrate 20 side to display an image (transmission mode).

  Of the external light incident from the counter substrate 20 side, the light incident on the reflective display region 100b reaches the reflective layer 8a through the liquid crystal layer 50 as shown by the arrow LA, and is reflected by the reflective layer 8a. Then, it is emitted as reflected display light again from the counter substrate 20 through the liquid crystal layer 50 to display an image (reflection mode).

  When such light modulation is performed, if the twist angle of the liquid crystal is set small, the change in the polarization state is a function of the product of the refractive index difference Δn and the layer thickness d of the liquid crystal layer 50 (retardation Δn · d). Therefore, if this value is optimized, display with good visibility can be performed.

  However, in the transflective liquid crystal device, the transmissive display light passes through the liquid crystal layer 50 only once and is emitted, whereas the reflected display light passes through the liquid crystal layer 50 twice. In both transmissive display light and reflective display light, it is difficult to optimize the retardation Δn · d. Therefore, if the layer thickness d of the liquid crystal layer 50 is set so that the display in the reflection mode has good visibility, the display in the transmission mode is sacrificed. On the contrary, if the layer thickness d of the liquid crystal layer 50 is set so that the display in the transmission mode has good visibility, the display in the reflection mode is sacrificed.

  Therefore, a thick layer thickness adjusting layer is formed on the TFT array substrate 10 on the lower layer side of the light reflecting layer 8a defining the reflective display region 100b, and the layer thickness d of the liquid crystal layer 50 in the reflective display region 100b is changed to the transmissive display region. A configuration has been devised in which the thickness is smaller than the layer thickness d of the liquid crystal layer 50 at 100b.

  As a conventional example, there is a method described in JP-A-61-173221.

  However, when the layer thickness adjusting layer is formed and the retardation Δn · d is optimized, irregularities due to the layer thickness adjusting layer are formed on the substrate surface. As a result, even when the liquid crystal device is assembled, or when the TFT array substrate 10 and the counter substrate 20 are controlled by spreading the gap material 5 on the surface of the counter substrate 20, the recess formed due to the layer thickness adjusting layer. There is a problem that the gap material rolls into the liquid crystal, and variations occur in the distance between the substrates during or after the manufacture of the liquid crystal device, making it impossible to maintain the retardation Δn · d in an optimum state.

  In addition, when the TFT array substrate 10 is formed with a thick layer thickness adjusting layer with respect to the TFT array substrate 10, the photolithography process is performed to form the pixel switching TFT 30 and the light reflecting layer 8 a. , Noticeable elevation difference and level difference occur. As a result, there is a problem that the exposure accuracy in the photolithography process is remarkably lowered to cause a step difference and a film residue, thereby reducing the reliability and yield of the liquid crystal device.

  In view of the above problems, the problem of the present invention is that, even when the thickness balance of the liquid crystal layer between the transmissive display area and the reflective display area is optimized by the layer thickness adjusting layer, the variation in the substrate interval is first. An object of the present invention is to provide a transflective liquid crystal device that does not occur and an electronic device using the same.

  Next, an object of the present invention is to form a pixel switching element or the like using photolithography technology even when the layer thickness adjustment layer optimizes the liquid crystal layer thickness balance between the transmissive display region and the reflective display region. It is an object of the present invention to provide a transflective liquid crystal device in which exposure accuracy does not decrease and an electronic apparatus using the transflective liquid crystal device.

  In order to solve the above-described problems, in the present invention, a first transparent substrate having a first transparent electrode and a pixel switching element formed in a matrix on the surface, and a surface side facing the first transparent electrode A second transparent substrate on which a second transparent electrode is formed; and a liquid crystal layer held between the first transparent substrate and the second transparent substrate. On the side, a semi-reflective layer is formed in which a reflective display region is formed in a pixel where the first transparent electrode and the second transparent electrode are opposed to each other, and the remaining region of the pixel is a transmissive display region. In the transmissive reflective liquid crystal device, the first transparent substrate and the second transparent substrate are configured such that a layer thickness of the liquid crystal layer in the reflective display region is thinner than a layer thickness of the liquid crystal layer in the transmissive display region. Formed of the first transparent substrate and the first transparent substrate. The substrate on the liquid crystal layer side of at least one of the transparent substrates is projected from one of the substrates and comes into contact with the other substrate, whereby the substrate of the first transparent substrate and the second transparent substrate Columnar protrusions that define the interval are formed.

  In the present invention, the first transparent substrate or the second transparent substrate may be configured such that the first transparent substrate and the second transparent substrate have the thickness of the liquid crystal layer in the reflective display region as the thickness in the transmissive display region. Since the liquid crystal layer is formed so as to be thinner than the liquid crystal layer, the transmissive display light passes through the liquid crystal layer once and is emitted, whereas the reflected display light passes through the liquid crystal layer twice. Even in this case, the retardation Δn · d can be optimized in both the transmissive display light and the reflective display light. Moreover, even if unevenness is formed on the first transparent substrate side or the second transparent substrate side by adjusting the thickness of the liquid crystal layer, in the present invention, the first transparent substrate or the second transparent substrate is used. The interval between the substrates is controlled by the columnar protrusions formed on the substrate, and the gap material is not scattered. For this reason, between the board | substrate and 2nd transparent board | substrate with a 1st transparent base material, the dispersion | variation in the board | substrate space | interval resulting from a gap material rolling into a recessed part among the unevenness | corrugations resulting from a layer thickness adjustment layer. The retardation Δn · d can be maintained in an optimum state. Therefore, high quality display can be performed.

  In the present invention, when adjusting the thickness of the liquid crystal layer, for example, on the liquid crystal layer side surface of the first transparent substrate, the total thickness of the film formed on the lower layer side of the first electrode is The reflective display area is thicker than the transmissive display area. Further, on the liquid crystal layer side surface of the second transparent substrate, the total thickness of the film formed on the lower layer side of the second electrode is thicker in the reflective display region than in the transmissive display region. But you can.

  In this configuration, for example, the liquid crystal layer side surface of one of the first transparent substrate and the second transparent substrate has a layer thickness of the liquid crystal layer in the reflective display region. It is only necessary to form a layer thickness adjusting layer that makes the thickness of the liquid crystal layer thinner than that in the transmissive display region.

  Here, it is preferable that the layer thickness adjusting layer is formed on the second transparent substrate. That is, when the first transparent substrate is a TFT array substrate, a photolithography process is performed on the TFT array substrate side to form a pixel switching TFT and a light reflection layer. When the layer thickness adjusting layer is formed, a significant difference in level or level difference is generated, and as a result, the exposure accuracy in the photolithography process is remarkably lowered to cause a level difference or a film residue. There arises a problem that the yield decreases. However, in the present invention, the layer thickness adjusting layer is formed on the second transparent substrate side, that is, the second transparent substrate on which the pixel switching element is not formed, and the layer thickness of the liquid crystal layer in the reflective display region is increased. The thickness of the liquid crystal layer in the transmissive display region is made thinner. For this reason, even if the layer thickness adjusting layer is provided, the exposure accuracy is not lowered in the photolithography process for forming the pixel switching element on the first transparent substrate. Therefore, a transflective liquid crystal device with high reliability and high display quality can be provided.

  In the present invention, the layer thickness adjusting layer is, for example, a transparent layer selectively formed in the reflective display area of the pixel, or thicker in the reflective display area, and is thicker in the transmissive display area than in the reflective display area. Is a thin transparent layer.

  In the present invention, when performing color display, a color filter is formed on the pixel on the surface of the second transparent substrate on the liquid crystal layer side.

  When forming such a color filter, a transmissive display color filter is formed in one of the upper layer side and the lower layer side of the transparent layer in the transmissive display region of the pixels, and the reflective display region Preferably, a reflective display color filter is formed on the same side of the transparent layer as the transmissive display color filter.

  Further, on the surface of the second substrate on the liquid crystal layer side, a transmissive display color filter is formed on one of the upper layer side and the lower layer side of the transparent layer in the transmissive display region of the pixels, In the reflective display area, a reflective display color filter may be formed on the opposite side of the transparent layer from the transmissive display color filter.

  In the present invention, it is preferable that the transmissive display color filter has a wider chromaticity region than the reflective display color filter. In a transflective liquid crystal device, transmissive display light passes through a color filter and is emitted only once, whereas reflected display light passes through the color filter twice. If the color filter has a wider chromaticity range than the color filter for reflective display, an image can be displayed with the same hue in both transmissive display light and reflective display light.

  “Wide chromaticity range” in the specification of the present application refers to, for example, that the area of the color triangle represented by the CIE 1931 rgb color system chromaticity diagram is large, and corresponds to the fact that the hue is dark.

  In the present invention, it is preferable that the transmissive display color filter has a wide chromaticity range due to, for example, a different kind or blending amount of color material from the reflective display color filter. That is, if the transmissive display color filter is made thicker than the reflective display color filter to widen the chromaticity range, the effect of the layer thickness adjusting layer is impaired. If the chromaticity range of the filter is made wider than the color filter for reflective display, the effect of the layer thickness adjusting layer is not impaired. Conversely, since the reflective display color filter can be made thicker than the transmissive display color filter, the layer of the liquid crystal layer between the transmissive display area and the reflective display area is also affected by the difference in film thickness of the color filter. Thickness balance can be optimized.

  In the present invention, the layer thickness adjusting layer is formed to be thicker than the transmissive display color filter in the reflective display region and the transmissive display color filter formed thin in the transmissive display region in the pixel. You may comprise from the color filter for reflective displays. If comprised in this way, since it is not necessary to add a layer thickness adjustment layer newly, the number of processes does not increase.

  In the present invention, when a color filter is used as the layer thickness adjusting layer, the transmissive display color filter is formed from a thin first color material layer having a wide chromaticity range, and the reflective display color filter is Preferably, the second color material layer is thicker than the first color material layer and has a narrow chromaticity range. In a transflective liquid crystal device, transmissive display light passes through a color filter and is emitted only once, whereas reflected display light passes through the color filter twice. If the color filter has a wider chromaticity range than the color filter for reflective display, an image can be displayed with the same hue in both transmissive display light and reflective display light.

  In the present invention, the transmissive display color filter is formed of a first color material layer, and the reflective display color filter is formed integrally with the transmissive display color filter. You may form from a layer and the 2nd color material layer laminated | stacked on the upper layer or lower layer side of the said 1st color material layer.

  A liquid crystal device to which the present invention is applied can be used as a display device of an electronic device such as a mobile phone or a mobile computer.

  Embodiments of the present invention will be described with reference to the drawings. In each drawing used in the following description, the scale is different for each layer and each member so that each layer and each member has a size that can be recognized on the drawing.

[Embodiment 1]
(Basic configuration of transflective liquid crystal device)
FIG. 1 is a plan view of a transflective liquid crystal device to which the present invention is applied as viewed from the counter substrate side together with each component, and FIG. 2 is a cross-sectional view taken along line HH ′ of FIG. FIG. 3 is an equivalent circuit diagram of various elements and wirings in a plurality of pixels formed in a matrix in the image display region of the transflective liquid crystal device. Note that, in each drawing used in the description of the present embodiment, each layer and each member have different scales so that each layer and each member can be recognized on the drawing.

  1 and 2, the transflective liquid crystal device 100 of this embodiment includes a TFT array substrate 10 (first transparent substrate) and a counter substrate 20 (second transparent substrate) bonded together by a sealing material 52. A liquid crystal layer 50 as an electro-optical material is held therebetween, and a peripheral parting 53 made of a light-shielding material is formed in an inner region of the region where the sealing material 52 is formed. A data line driving circuit 101 and a mounting terminal 102 are formed along one side of the TFT array substrate 10 in a region outside the sealing material 52, and the scanning line driving circuit 104 along two sides adjacent to the one side. Is formed. The remaining side of the TFT array substrate 10 is provided with a plurality of wirings 105 for connecting between the scanning line driving circuits 104 provided on both sides of the image display region, and further, under the peripheral parting line 53 and the like. In some cases, a precharge circuit or an inspection circuit is provided. Further, at least one corner portion of the counter substrate 20 is formed with a vertical conductive material 106 for electrical conduction between the TFT array substrate 10 and the counter substrate 20. Further, the data line driving circuit 101, the scanning line driving circuit 104, and the like may overlap with the seal material 52 or may be formed in an inner region of the seal material 52.

  Instead of forming the data line driving circuit 101 and the scanning line driving circuit 104 on the TFT array substrate 10, for example, a TAB (tape automated, bonding) substrate on which a driving LSI is mounted is mounted on the TFT array substrate 10. You may make it connect electrically and mechanically with respect to the terminal group formed in the periphery part via an anisotropic conductive film. In the transflective liquid crystal device 100, the type of the liquid crystal layer 50 to be used, that is, an operation mode such as a TN (twisted nematic) mode, an STN (super TN) mode, or a normally white mode / normally black mode. According to another, a polarizing film, a retardation film, a polarizing plate, and the like are arranged in a predetermined direction, but the illustration is omitted here. Further, when the transflective liquid crystal device 100 is configured for color display, as described later, an RGB color filter is provided in a region of the counter substrate 20 facing each pixel electrode 9a of the TFT array substrate 10. It is formed with a protective film.

  In the screen display region of the transflective liquid crystal device 100, as shown in FIG. 3, a plurality of pixels 100a are configured in a matrix, and each of these pixels 100a includes a pixel electrode 9a and the pixel electrode 9a. A pixel switching TFT 30 for driving the pixel electrode 9 a is formed, and a data line 6 a for supplying pixel signals S 1, S 2... Sn is electrically connected to the source of the TFT 30. The pixel signals S1, S2,... Sn written to the data lines 6a may be supplied line-sequentially in this order, or may be supplied for each group to a plurality of adjacent data lines 6a. Good. Further, the scanning line 3a is electrically connected to the gate of the TFT 30, and the scanning signals G1, G2,... Gm are applied to the scanning line 3a in a pulse-sequential manner in this order at a predetermined timing. It is configured. The pixel electrode 9a is electrically connected to the drain of the TFT 30, and the pixel signal S1, S2,... Sn supplied from the data line 6a is turned on by turning on the TFT 30 as a switching element for a certain period. Are written in each pixel at a predetermined timing. Thus, the pixel signals S1, S2,... Sn at a predetermined level written to the liquid crystal through the pixel electrode 9a are held for a certain period with the counter electrode 21 of the counter substrate 20 shown in FIG. .

  Here, the liquid crystal layer 50 modulates light and enables gradation display by changing the orientation and order of the molecular assembly according to the applied voltage level. In the normally white mode, the amount of incident light passing through the portion of the liquid crystal layer 50 is reduced according to the applied voltage. In the normally black mode, the incident light is changed according to the applied voltage. The amount of light passing through the portion of the liquid crystal layer 50 increases. As a result, light having a contrast according to the pixel signals S1, S2,... Sn is emitted from the transflective liquid crystal device 100 as a whole.

  In order to prevent the retained pixel signals S1, S2,... Sn from leaking, a storage capacitor 60 may be added in parallel with the liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode. . For example, the voltage of the pixel electrode 9a is held by the storage capacitor 60 for a time that is three orders of magnitude longer than the time when the source voltage is applied. Thereby, the charge retention characteristics are improved, and the transflective liquid crystal device 100 having a high contrast ratio can be realized. As a method of forming the storage capacitor 60, as illustrated in FIG. 3, the storage capacitor 60 is formed between the storage capacitor 60 and the capacitor line 3b, which is a wiring for forming the storage capacitor 60, or with the previous scanning line 3a. Any of them may be formed between them.

(Configuration of TFT array substrate)
FIG. 4 is a plan view of a plurality of adjacent pixel groups of the TFT array substrate used in the transflective liquid crystal device of this embodiment. FIG. 5 is a cross-sectional view when a part of the pixels of the transflective liquid crystal device is cut at a position corresponding to the line CC ′ of FIG.

In FIG. 4, on the TFT array substrate 10, pixel electrodes 9a (first transparent electrodes) made of a plurality of transparent ITO (Indium Tin Oxide) films are formed in a matrix shape. On the other hand, pixel switching TFTs 30 are connected to each other. A data line 6a, a scanning line 3a, and a capacitor line 3b are formed along the vertical and horizontal boundaries of the pixel electrode 9a, and the TFT 30 is connected to the data line 6a and the scanning line 3a. That is, the data line 6 a is electrically connected to the high concentration source region 1 d of the TFT 30 through the contact hole, and the protruding portion of the scanning line 3 a constitutes the gate electrode of the TFT 30.
The storage capacitor 60 has a structure in which the extended portion 1f of the semiconductor film 1 for forming the TFT 30 for pixel switching is made conductive, and the lower electrode 41 is overlapped with the capacitor line 3b as the upper electrode. It has become.

  As shown in FIG. 5, the cross section of the pixel region configured in this way along the line CC ′ is a silicon oxide film having a thickness of 300 nm to 500 nm on the surface of the transparent substrate 10 ′ which is the base of the TFT array substrate 10. A base protective film 11 made of (insulating film) is formed, and an island-like semiconductor film 1 a having a thickness of 30 nm to 100 nm is formed on the surface of the base protective film 11. A gate insulating film 2 made of a silicon oxide film having a thickness of about 50 to 150 nm is formed on the surface of the semiconductor film 1a, and a scanning line 3a having a thickness of 300 nm to 800 nm is formed on the surface of the gate insulating film 2. Has been. In the semiconductor film 1a, a region facing the scanning line 3a via the gate insulating film 2 is a channel region 1a '. A source region including a low concentration source region 1b and a high concentration source region 1d is formed on one side of the channel region 1a ′, and a drain including a low concentration drain region 1c and a high concentration drain region 1e on the other side. A region is formed.

  An interlayer insulating film 4 made of a silicon oxide film having a thickness of 300 nm to 800 nm is formed on the surface side of the pixel switching TFT 30, and a silicon nitride film having a thickness of 100 nm to 300 nm is formed on the surface of the interlayer insulating film 4. A surface protective film (not shown) made of a film may be formed. A data line 6 a having a thickness of 300 nm to 800 nm is formed on the surface of the interlayer insulating film 4, and the data line 6 a is electrically connected to the high concentration source region 1 d through a contact hole formed in the interlayer insulating film 4. Connected to. A drain electrode 6b formed simultaneously with the data line 6a is formed on the surface of the interlayer insulating film 4, and this drain electrode 6b is electrically connected to the high-concentration drain region 1e through a contact hole formed in the interlayer insulating film 4. Connected to.

  A concavo-convex forming layer 13a made of a first photosensitive resin is formed in a predetermined pattern on the interlayer insulating film 4, and an upper insulating film made of a second photosensitive resin is formed on the surface of the concavo-convex forming layer 13a. 7a is formed. A light reflecting film 8a made of an aluminum film or the like is formed on the surface of the upper insulating film 7a. Therefore, the unevenness pattern 8g composed of the recesses 8c and the protrusions 8b is formed on the surface of the light reflecting film 8a by reflecting the unevenness of the unevenness forming layer 13a via the upper insulating film 7a.

  Here, a light transmission window 8d is formed in the light reflection layer 8a. For this reason, the light reflecting layer 8a constitutes the reflective display region 100b in the pixel region 100a where the pixel electrode 9a and the counter electrode 21 face each other, and the remaining region where the light reflecting layer 8a is not formed (light transmission window 8d). ) Constitutes the transmissive display area 100c.

  A pixel electrode 9a made of an ITO film is formed on the light reflecting film 8a. The pixel electrode 9a is directly laminated on the surface of the light reflecting film 8a, and the pixel electrode 9a and the light reflecting film 8a are electrically connected. The pixel electrode 9a is electrically connected to the drain electrode 6b through a contact hole formed in the photosensitive resin layer 7a and the interlayer insulating film 4.

  An alignment film 12 made of a polyimide film is formed on the surface side of the pixel electrode 9a. The alignment film 12 is a film obtained by performing a rubbing process on a polyimide film.

  Further, the extension line 1f (lower electrode) from the high-concentration drain region 1e is opposed to the capacitor line 3b as an upper electrode through an insulating film (dielectric film) formed simultaneously with the gate insulating film 2. Thus, the storage capacitor 60 is configured.

  Furthermore, in this embodiment, a plurality of columnar protrusions 40 each having a height of 2 μm to 3 μm made of a transparent polyimide resin or the like are formed on the upper layer side of the capacitor line 3b. A distance between the TFT array substrate 10 and the counter substrate 20 is defined. For this reason, in the transflective liquid crystal device 100 of this embodiment, no gap material is scattered between the TFT array substrate 10 and the counter substrate 20.

  The TFT 30 preferably has an LDD structure as described above, but may have an offset structure in which impurity ions are not implanted into regions corresponding to the low concentration source region 1b and the low concentration drain region 1c. . Further, the TFT 30 may be a self-aligned TFT in which impurity ions are implanted at a high concentration using a gate electrode (a part of the scanning line 3a) as a mask to form high-concentration source and drain regions in a self-aligned manner. .

  In this embodiment, a single gate structure is employed in which only one gate electrode (scanning line 3a) of the TFT 30 is disposed between the source and drain regions. However, two or more gate electrodes may be disposed therebetween. Good. At this time, the same signal is applied to each gate electrode. If the TFT 30 is configured with dual gates (double gates) or more than triple gates in this manner, leakage current at the junction between the channel and the source-drain region can be prevented, and the current during OFF can be reduced. If at least one of these gate electrodes has an LDD structure or an offset structure, the off-current can be further reduced and a stable switching element can be obtained.

(Configuration of counter substrate)
In the counter substrate 20, a light shielding film 23 called a black matrix or a black stripe is formed in a region facing the vertical and horizontal boundary regions of the pixel electrode 9 a formed on the TFT array substrate 10. A counter electrode 21 (second electrode) made of an ITO film is formed. Further, an alignment film 22 made of a polyimide film is formed on the upper layer side of the counter electrode 21, and this alignment film 22 is a film obtained by rubbing the polyimide film.

  In addition, on the lower layer side of the counter electrode 21 in the counter substrate 20, RGB color filters 24 are 1 μm to several μm in the reflective display region 100 b and the transmissive display region 100 c using a photolithography technique, a flexographic printing method, or an ink jet method. It is formed in the thickness. Here, the color filter 24 is formed integrally with the reflective display region 100b and the transmissive display region 100c, and the film thickness is constant in the reflective display region 100b and the transmissive display region 100c.

  Furthermore, in this embodiment, the layer thickness d of the liquid crystal layer 50 in the reflective display region 100b is set between the counter electrode 21 and the color filter 24, that is, on the lower layer side of the counter electrode 21, and the liquid crystal layer 50 in the transmissive display region 100c. A layer thickness adjusting layer 25 that is thinner than the layer thickness d is formed. In this embodiment, the layer thickness adjusting layer 25 is an acrylic resin or polyimide resin having a thickness of 2 μm to 3 μm, which is selectively formed in the reflective display region 100b using a photolithography technique, a flexographic printing method, or an ink jet method. It is a transparent layer.

(Operation and effect of this form)
In the liquid crystal device having such a configuration, among the light emitted from the backlight device (not shown) arranged on the back side of the TFT array substrate 10, the light incident on the transmissive display region 100c is indicated by an arrow LB. As described above, the light enters the liquid crystal layer 50 from the TFT array substrate 101 side, is optically modulated by the liquid crystal layer 50, and then is emitted as transmissive display light from the counter substrate 20 side to display an image (transmission mode).

  Of the external light incident from the counter substrate 20 side, the light incident on the reflective display region 100b reaches the reflective layer 8a through the liquid crystal layer 50 as shown by the arrow LA, and is reflected by the reflective layer 8a. Then, it is emitted as reflected display light again from the counter substrate 20 through the liquid crystal layer 50 to display an image (reflection mode).

  When performing such display, transmissive display light passes through the liquid crystal layer 50 only once and is emitted, whereas reflected display light passes through the liquid crystal layer 50 twice. In the embodiment, due to the layer thickness adjusting layer 25 formed in the reflective display region 100b, the layer thickness d of the liquid crystal layer 50 in the reflective display region 100b is considerably smaller than the layer thickness d of the liquid crystal layer 50 in the transmissive display region 100c. For this reason, the retardation Δn · d can be optimized in both the transmissive display light and the reflective display light, so that high-quality display can be performed.

  In addition, in this embodiment, the layer thickness adjusting layer 25 is formed on the counter substrate 20 side, that is, the substrate on which the pixel switching TFT 30 is not formed, and the layer thickness d of the liquid crystal layer 50 in the reflective display region 100b is set. The liquid crystal layer 50 is thinner than the layer thickness d in the transmissive display region 100c. For this reason, even if the layer thickness adjusting layer 25 is provided, the exposure accuracy is not lowered in the photolithography process for forming the TFT 30 on the TFT array substrate 10. Therefore, the transflective liquid crystal device 100 having high reliability and high display quality can be provided.

  Further, in this embodiment, the interval between the TFT array substrate 10 and the counter substrate 20 is defined by the columnar protrusions 40 formed on the TFT array substrate 10, and a gap material is scattered between the TFT array substrate 10 and the counter substrate 20. It has not been. For this reason, even if the counter substrate 20 has irregularities due to the layer thickness adjusting layer 25 as in this embodiment, there is no problem that the gap material accumulates in the concave portions and does not function. Therefore, since the interval between the TFT array substrate 10 and the counter substrate 20 is accurately defined and the retardation Δn · d is optimized, high-quality display can be performed.

  In this embodiment, the color filter 24 is formed before the layer thickness adjusting layer 25 is formed. Therefore, even if the spin coating method is used when forming the color filter 24, the layer thickness adjusting layer 25 is not changed. There is an advantage that no film thickness variation occurs.

[Embodiment 2]
6 is a cross-sectional view when a part of the pixels of the transflective liquid crystal device according to the second embodiment of the present invention is cut at a position corresponding to the line CC ′ of FIG. In this embodiment and any of the embodiments described below, the basic configuration is the same as that of the first embodiment. Therefore, common portions are denoted by the same reference numerals, description thereof is omitted, and only the configuration of the counter substrate, which is a feature point of each embodiment, will be described.

  In the counter substrate 20 shown in FIG. 6, the layer thickness d of the liquid crystal layer 50 in the reflective display region 100b is set to the liquid crystal layer in the transmissive display region 100c by the transparent layer thickness adjusting layer 25 selectively formed in the reflective display region 100b. It is considerably thinner than a layer thickness d of 50. For this reason, the retardation Δn · d can be optimized in both the transmissive display light and the reflective display light, so that high-quality display can be performed.

  In addition, in this embodiment, the layer thickness adjusting layer 25 is formed on the counter substrate 20 side, that is, the substrate on which the pixel switching TFT 30 is not formed, and the layer thickness d of the liquid crystal layer 50 in the reflective display region 100b is set. The layer thickness d of the liquid crystal layer 50 in the transmissive display region 100c is made thinner. For this reason, even if the layer thickness adjusting layer 25 is provided, the exposure accuracy is not lowered in the photolithography process for forming the TFT 30 on the TFT array substrate 10. Therefore, the transflective liquid crystal device 100 having high reliability and high display quality can be provided.

  In this embodiment, the interval between the TFT array substrate 10 and the counter substrate 20 is defined by the columnar protrusions 40 formed on the TFT array substrate 10, and a gap material is scattered between the TFT array substrate 10 and the counter substrate 20. It has not been. For this reason, even if the counter substrate 20 has irregularities due to the layer thickness adjusting layer 25 as in this embodiment, there is no problem that the gap material accumulates in the concave portions and does not function. Therefore, since the interval between the TFT array substrate 10 and the counter substrate 20 is accurately defined and the retardation Δn · d is optimized, high-quality display can be performed.

  In addition, an RGB color filter is formed in the reflective display region 100b and the transmissive display region 100c on the lower layer side of the counter electrode 21. With respect to this color filter, in this embodiment, a transmissive display color formed in the transmissive display region 100c. The filter 241 and the reflective display color filter 242 formed in the reflective display region 100b have the same film thickness, but different color materials and blending amounts. Therefore, the transmissive display color filter 241 is the reflective display color filter 242. The chromaticity range is wider.

  Therefore, in the transflective liquid crystal device 100, the transmissive display light passes through the color filter and is emitted only once, whereas the reflective display light passes through the color filter twice. Since the transmissive display color filter 241 has a wider chromaticity range than the reflective display color filter 242, an image can be displayed with the same hue in both the transmissive display light and the reflective display light.

  Here, if the transmissive display color filter 241 is made thicker than the reflective display color filter 242 to widen the chromaticity range, the effect of the layer thickness adjusting layer 25 is lost. Since the chromaticity range of the transmissive display color filter 241 is made wider than that of the reflective display color filter 242 depending on the blending amount, the effect of the layer thickness adjusting layer 25 is not impaired.

  Conversely, if the reflective display color filter 242 is made thicker than the transmissive display color filter 241 as shown in FIG. 7, the film of the color filters 241 and 242 in addition to the layer thickness adjusting layer 25. The thickness balance of the liquid crystal layer 50 between the transmissive display region 100b and the reflective display region 100c can be optimized also by the thickness difference.

[Embodiment 3]
FIG. 8 is a cross-sectional view of a part of the pixels of the transflective liquid crystal device according to the third embodiment of the present invention cut at a position corresponding to the line CC ′ of FIG.

  In the first and second embodiments, the layer thickness adjusting layer 25 is formed between the counter electrode 21 and the color filter. However, in this embodiment, as shown in FIG. 8, for transmissive display formed in the transmissive display region 100 c. A transparent layer thickness adjusting layer 25 is selectively formed in the reflective display region 100b with respect to the color filter 241 and the lower layer side of the reflective display color filter 242 formed in the reflective display region 100b.

  For this reason, the layer thickness d of the liquid crystal layer 50 in the reflective display region 100b is considerably smaller than the layer thickness d of the liquid crystal layer 50 in the transmissive display region 100c. Accordingly, the retardation Δn · d can be optimized in both the transmissive display light and the reflective display light, so that high-quality display can be performed. In addition, in this embodiment, the layer thickness adjusting layer 25 is formed on the counter substrate 20 side, that is, the substrate on which the pixel switching TFT 30 is not formed, and the layer thickness d of the liquid crystal layer 50 in the reflective display region 100b is set. Since the thickness d is smaller than the layer thickness d of the liquid crystal layer 50 in the transmissive display region 100c, even if the layer thickness adjusting layer 25 is provided, the exposure accuracy is not lowered in the photolithography process for forming the TFT 30 on the TFT array substrate 10. . Therefore, the transflective liquid crystal device 100 having high reliability and high display quality can be provided.

  Also in this embodiment, the color filter 241 for transmissive display has a wider chromaticity range than the color filter 242 for reflective display. Therefore, an image can be displayed with the same hue in both transmissive display light and reflective display light.

  Further, the columnar protrusions 40 formed on the TFT array substrate 10 define the distance between the TFT array substrate 10 and the counter substrate 20, and no gap material is scattered between the TFT array substrate 10 and the counter substrate 20. Even if the counter substrate 20 has irregularities due to the layer thickness adjusting layer 25, the problem that the gap material accumulates in the concave portions and does not function does not occur. Therefore, since the interval between the TFT array substrate 10 and the counter substrate 20 is accurately defined and the retardation Δn · d is optimized, high-quality display can be performed.

  In this embodiment, the transmissive display color filter 241 has a wider chromaticity region than the reflective display color filter 242, but as shown in FIG. 9, the transmissive display color filter 241 is common to the reflective display region 100b and the transmissive display region 100c. The color filter 24 may be formed.

[Embodiment 4]
FIG. 10 is a cross-sectional view when a part of the pixels of the transflective liquid crystal device according to the fourth embodiment of the present invention is cut at a position corresponding to the line CC ′ of FIG.

  In the first and second embodiments, the layer thickness adjusting layer 25 is formed between the counter electrode 21 and the color filter. In the third embodiment, the layer thickness adjusting layer 25 is formed on the lower layer side of the color filter. In the embodiment, as shown in FIG. 10, on the upper layer side of the transmissive display color filter 241 formed in the transmissive display region 100c, a transparent layer thickness adjusting layer 25 is selectively formed in the reflective display region 100b. A reflective display color filter 242 is formed on the upper layer side of the thickness adjusting layer 25.

  Even in the transflective liquid crystal device 100 configured as described above, the layer thickness d of the liquid crystal layer 50 in the reflective display region 100b is considerably smaller than the layer thickness d of the liquid crystal layer 50 in the transmissive display region 100c. Accordingly, the retardation Δn · d can be optimized in both the transmissive display light and the reflective display light, so that high-quality display can be performed. In addition, in this embodiment, the layer thickness adjusting layer 25 is formed on the counter substrate 20 side, that is, the substrate on which the pixel switching TFT 30 is not formed, and the layer thickness d of the liquid crystal layer 50 in the reflective display region 100b is set. Since the thickness d is smaller than the layer thickness d of the liquid crystal layer 50 in the transmissive display region 100c, even if the layer thickness adjusting layer 25 is provided, the exposure accuracy is not lowered in the photolithography process for forming the TFT 30 on the TFT array substrate 10. . Therefore, the transflective liquid crystal device 100 having high reliability and high display quality can be provided.

  Also in this embodiment, the color filter 241 for transmissive display has a wider chromaticity range than the color filter 242 for reflective display. Therefore, an image can be displayed with the same hue in both transmissive display light and reflective display light.

  Further, the columnar protrusions 40 formed on the TFT array substrate 10 define the distance between the TFT array substrate 10 and the counter substrate 20, and no gap material is scattered between the TFT array substrate 10 and the counter substrate 20. Even if the counter substrate 20 has irregularities due to the layer thickness adjusting layer 25, the problem that the gap material accumulates in the concave portions and does not function does not occur. Therefore, since the interval between the TFT array substrate 10 and the counter substrate 20 is accurately defined and the retardation Δn · d is optimized, high-quality display can be performed.

  In this embodiment, the transmissive display color filter 241 has a wider chromaticity range than the reflective display color filter 242, but, as shown in FIG. 11, with respect to the transmissive display area 100c and the reflective display area 100b, Color filters 241 and 242 having the same film thickness and chromaticity range may be formed.

[Embodiment 5]
FIG. 12 is a cross-sectional view when a part of the pixels of the transflective liquid crystal device according to the fifth embodiment of the present invention is cut at a position corresponding to the line CC ′ of FIG.

  In the first, second, third, and fourth embodiments, the layer thickness adjusting layer 25 is selectively formed in the reflective display region 100b. For example, as shown in FIG. 12, the transmissive display region 100c is thin. Alternatively, a thick transparent layer may be formed as the layer thickness adjusting layer 25 in the reflective display region 100b. The layer thickness adjusting layer 25 having such a configuration can be formed by a photolithography technique, a flexographic printing method, a method of forming a transparent layer twice by an ink jet method, or a photolithography technique with half exposure.

[Embodiment 6]
FIG. 13 is a cross-sectional view when a part of the pixels of the transflective liquid crystal device according to the sixth embodiment of the present invention is cut at a position corresponding to the line CC ′ of FIG.

  In the first to fifth embodiments, the layer thickness adjusting layer 25 made of a transparent layer is added to the lower layer side of the counter electrode 21, but the color filter itself as in the sixth and seventh embodiments described below. May be used as a layer thickness adjusting layer.

  As shown in FIG. 13, in the transflective liquid crystal device 100 of this embodiment, the transmissive display region 100c is applied to the lower layer side of the counter electrode 21 by using a photolithography technique, a flexographic printing method, or an inkjet method. A thin transmissive display color filter 241 is formed, and a thick reflective display color filter 242 is formed in the reflective display region 100b.

  For this reason, the layer thickness d of the liquid crystal layer 50 in the reflective display region 100b is considerably smaller than the layer thickness d of the liquid crystal layer 50 in the transmissive display region 100c. Accordingly, the retardation Δn · d can be optimized in both the transmissive display light and the reflective display light, so that high-quality display can be performed. In addition, in this embodiment, the layer thickness adjusting layer 25 is formed on the counter substrate 20 side, that is, the substrate on which the pixel switching TFT 30 is not formed, and the layer thickness d of the liquid crystal layer 50 in the reflective display region 100b is set. Since the thickness d is smaller than the layer thickness d of the liquid crystal layer 50 in the transmissive display region 100c, even if the layer thickness adjusting layer 25 is provided, the exposure accuracy is not lowered in the photolithography process for forming the TFT 30 on the TFT array substrate 10. . Therefore, the transflective liquid crystal device 100 having high reliability and high display quality can be provided.

  Also in this embodiment, the transmissive display color filter 241 has a wider chromaticity region than the reflective display color filter 242 depending on the type and blending amount of the color material. Therefore, an image can be displayed with the same hue in both transmissive display light and reflective display light.

  Furthermore, also in this embodiment, the interval between the TFT array substrate 10 and the counter substrate 20 is defined by the columnar protrusions 40 formed on the TFT array substrate 10, and a gap material is scattered between the TFT array substrate 10 and the counter substrate 20. Therefore, even if the counter substrate 20 has irregularities due to the layer thickness adjusting layer 25, there is no problem that the gap material accumulates in the concave portions and does not function. Therefore, since the interval between the TFT array substrate 10 and the counter substrate 20 is accurately defined and the retardation Δn · d is optimized, high-quality display can be performed.

  In this embodiment, the transmissive display color filter 241 has a wider chromaticity range than the reflective display color filter 242, but, as shown in FIG. 14, with respect to the transmissive display area 100c and the reflective display area 100b, Color filters 241 and 242 having the same color material but different film thickness may be formed.

  Further, as shown in FIG. 15, a color filter 241 (first color material layer) having the same chromaticity region and film thickness as the transmissive display region 100c and a color made of another color material with respect to the reflective display region 100b. A structure in which a filter 242 (second color material layer) is stacked and a difference in film thickness may be employed.

[Embodiment 7]
FIG. 16 is a cross-sectional view when a part of the pixels of the transflective liquid crystal device according to the seventh embodiment of the present invention is cut at a position corresponding to the line CC ′ of FIG.

  In the first to sixth embodiments, the layer thickness adjusting layer 25 is added on the counter substrate 20 side. However, as shown in FIG. 16, photolithography is performed on the reflective display region 100 b of the TFT array substrate 10. By selectively forming the layer thickness adjusting layer 15 made of a photosensitive resin using a technology, flexographic printing method, or ink jet method, the retardation Δn · d is optimized in both transmissive display light and reflective display light. May be.

  In the example shown in FIG. 16, the layer thickness adjusting layer 15 is formed on the lower layer side of the unevenness forming layer 13a. However, the layer thickness adjusting layer 15 is formed between any layers on the lower layer side of the pixel electrode 9a. Also good. If the interlayer adjustment layer 15 is formed on the lower layer side of the light reflection film 8a, the layer thickness adjustment layer 15 need not be limited to a transparent film.

[Embodiment 8]
FIG. 17 is a cross-sectional view when a part of the pixels of the transflective liquid crystal device according to the eighth embodiment of the present invention is cut at a position corresponding to the line CC ′ of FIG.

  In the first to seventh embodiments, the retardation Δn · d is optimized for both the transmissive display light and the reflective display light by adding the layer thickness adjusting layers 15 and 25. For example, as shown in FIG. By removing the upper insulating film 7a in the transmissive display region 100c of the TFT array substrate 10, the total thickness of the film formed on the lower layer side of the pixel electrode 9a is increased in the reflective display region 100b and decreased in the transmissive display region 100c. Thus, the layer thickness d of the liquid crystal layer 50 may be adjusted.

[Other embodiments]
In the above embodiment, the example in which the substrate spacing is controlled by the columnar protrusions 40 for the liquid crystal device in which the layer thickness adjusting layer 25 is formed on the counter substrate 20 has been described, but the layer thickness adjusting layer 25 is provided on the TFT array plate 10. Control of the substrate interval by the columnar protrusions 40 may be performed on the formed liquid crystal device.

  Further, the columnar protrusions 40 may be formed on the counter substrate 20 side.

  Further, in the above embodiment, an example in which a TFT is used as an active element for pixel switching has been described. However, a thin film diode element (TFD element / Thin Film Diode element) such as an MIM (Metal Insulator Metal) element is used as an active element. The same applies to the case.

[Application of transflective liquid crystal device to electronic equipment]
The transflective liquid crystal device 100 configured as described above can be used as a display unit of various electronic devices, and an example thereof will be described with reference to FIGS. 18, 19, and 20.

  FIG. 18 is a block diagram showing a circuit configuration of an electronic apparatus using the transflective liquid crystal device according to the present invention as a display device.

  In FIG. 18, the electronic device includes a display information output source 70, a display information processing circuit 71, a power supply circuit 72, a timing generator 73, and a liquid crystal device 74. The liquid crystal device 74 includes a liquid crystal display panel 75 and a drive circuit 76. As the liquid crystal device 74, the above-described transflective liquid crystal device 100 can be used.

  The display information output source 70 includes a storage unit such as a ROM (Read Only Memory) and a RAM (Random Access Memory), a storage unit such as various disks, a tuning circuit that tunes and outputs a digital image signal, and the like, and is generated by a timing generator 73. Display information such as an image signal in a predetermined format is supplied to the display information processing circuit 71 based on the various clock signals.

  The display information processing circuit 71 includes various known circuits such as a serial-parallel conversion circuit, an amplification / inversion circuit, a rotation circuit, a gamma correction circuit, a clamp circuit, and the like, executes processing of input display information, The signal is supplied to the drive circuit 76 together with the clock signal CLK. The power supply circuit 72 supplies a predetermined voltage to each component.

  FIG. 19 shows a mobile personal computer that is an embodiment of an electronic apparatus according to the invention. The personal computer 80 shown here has a main body 82 provided with a keyboard 81 and a liquid crystal display unit 83. The liquid crystal display unit 83 includes the transflective liquid crystal device 100 described above.

  FIG. 20 shows a mobile phone which is another embodiment of the electronic apparatus according to the invention. A cellular phone 90 shown here includes a plurality of operation buttons 91 and a display unit including the above-described transflective liquid crystal device 100.

  As described above, in the present invention, the first transparent substrate and the second transparent substrate are formed so that the thickness of the liquid crystal layer in the reflective display region is thinner than the thickness of the liquid crystal layer in the transmissive display region. Therefore, the transmissive display light is emitted only once through the liquid crystal layer, whereas the transmissive display light and the reflective display light are transmitted even though the reflective display light passes through the liquid crystal layer twice. In both cases, the retardation Δn · d can be optimized. Moreover, even if unevenness is formed on the first transparent substrate side or the second transparent substrate side by adjusting the thickness of the liquid crystal layer, in the present invention, the first transparent substrate or the second transparent substrate is used. The interval between the substrates is controlled by the columnar protrusions formed on the substrate, and the gap material is not scattered. For this reason, between the board | substrate and the 2nd transparent substrate where the 1st transparent base material is, the dispersion | variation in the board | substrate space | interval resulting from a gap material rolling into a recessed part among the unevenness | corrugations resulting from a layer thickness adjustment layer. The retardation Δn · d can be maintained in an optimum state. Therefore, high quality display can be performed.

It is a top view when the transflective liquid crystal device to which the present invention is applied is viewed from the counter substrate side. It is sectional drawing in the H-H 'line | wire of FIG. FIG. 4 is an equivalent circuit diagram of elements formed in a plurality of pixels in a matrix form in a transflective liquid crystal device. It is a top view which shows the structure of each pixel of the TFT array substrate of the transflective liquid crystal device according to the present invention. FIG. 5 is a cross-sectional view of the transflective liquid crystal device according to the first embodiment of the present invention cut at a position corresponding to a C-C ′ line in FIG. 4. FIG. 5 is a cross-sectional view of the transflective liquid crystal device according to the second embodiment of the present invention, cut at a position corresponding to the line C-C ′ of FIG. 4. FIG. 6 is a cross-sectional view of a transflective liquid crystal device according to a modification of the second embodiment of the present invention, cut at a position corresponding to the line C-C ′ of FIG. 4. FIG. 5 is a cross-sectional view of a transflective liquid crystal device according to a third embodiment of the present invention, cut at a position corresponding to a C-C ′ line in FIG. 4. FIG. 6 is a cross-sectional view of a transflective liquid crystal device according to a modification of the third embodiment of the present invention, cut at a position corresponding to the line C-C ′ of FIG. 4. FIG. 5 is a cross-sectional view of a transflective liquid crystal device according to a fourth embodiment of the present invention, cut at a position corresponding to a C-C ′ line in FIG. 4. FIG. 6 is a cross-sectional view of a transflective liquid crystal device according to a modification of the fourth embodiment of the present invention, cut at a position corresponding to the C-C ′ line of FIG. 4. FIG. 6 is a cross-sectional view of a transflective liquid crystal device according to a fifth embodiment of the present invention cut at a position corresponding to a C-C ′ line in FIG. 4. FIG. 7 is a cross-sectional view of a transflective liquid crystal device according to a sixth embodiment of the present invention, cut at a position corresponding to a C-C ′ line in FIG. 4. FIG. 7 is a cross-sectional view of a transflective liquid crystal device according to a modification of the sixth embodiment of the present invention, cut at a position corresponding to the line C-C ′ of FIG. 4. FIG. 10 is a cross-sectional view of a transflective liquid crystal device according to another modification of the sixth embodiment of the present invention cut at a position corresponding to the C-C ′ line of FIG. 4. FIG. 7 is a cross-sectional view of a transflective liquid crystal device according to a seventh embodiment of the present invention, cut at a position corresponding to a C-C ′ line in FIG. 4. FIG. 9 is a cross-sectional view of a transflective liquid crystal device according to an eighth embodiment of the present invention, cut at a position corresponding to a C-C ′ line in FIG. 4. It is a block diagram which shows the circuit structure of the electronic device using the transflective liquid crystal device which concerns on this invention as a display apparatus. It is explanatory drawing which shows the mobile personal computer using the transflective liquid crystal device which concerns on this invention. It is explanatory drawing of the mobile telephone using the transflective liquid crystal device which concerns on this invention. It is sectional drawing of the conventional transflective liquid crystal device.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1a ... Semiconductor film, 2 ... Gate insulating film, 3a ... Scan line, 3b ... Capacitance line, 4 ... Interlayer insulating film, 6a ... Data line, 6b ... Drain electrode, 7a ... Upper layer insulating film, 8a ... Light reflection film, 8d ... Light transmission window, 8 g. Uneven pattern on the surface of the light reflecting film, 9 a. Pixel electrode, 10... TFT array substrate, 11. Light-shielding film, 24... Color filter, 30... Pixel switching TFT, 40. ... transparent display area.

Claims (18)

A first transparent substrate having a first transparent electrode and pixel switching elements formed in a matrix on the surface, and a second transparent electrode having a second transparent electrode formed on the surface facing the first transparent electrode A transparent substrate, and a liquid crystal layer held between the first transparent substrate and the second transparent substrate,
On the side of the first transparent substrate, light that forms a reflective display region in the pixel where the first transparent electrode and the second transparent electrode face each other, and uses the remaining region of the pixel as a transmissive display region. In a transflective liquid crystal device in which a reflective layer is formed,
The first transparent substrate and the second transparent substrate are formed so that a layer thickness of the liquid crystal layer in the reflective display region is smaller than a layer thickness of the liquid crystal layer in the transmissive display region,
The liquid crystal layer side surface of at least one of the first transparent substrate and the second transparent substrate protrudes from one substrate and comes into contact with the other substrate, thereby the first transparent substrate. A transflective liquid crystal device, wherein columnar protrusions defining a distance between the substrate and the second transparent substrate are formed.   2. The liquid crystal layer side surface of the second transparent substrate according to claim 1, wherein the total thickness of the film formed on the lower layer side of the second electrode is thicker in the reflective display region than in the transmissive display region. A transflective liquid crystal device characterized.   2. The liquid crystal layer side surface of the first transparent substrate according to claim 1, wherein a total thickness of a film formed on a lower layer side of the first electrode is thicker in the reflective display region than in the transmissive display region. A transflective liquid crystal device characterized.   2. The layer thickness of the liquid crystal layer in the reflective display area is set on the surface on the liquid crystal layer side of one of the first transparent substrate and the second transparent substrate according to claim 1. A transflective liquid crystal device, characterized in that a layer thickness adjusting layer that is thinner than the liquid crystal layer is formed.   5. The transflective liquid crystal device according to claim 4, wherein the layer thickness adjusting layer is formed on the second transparent substrate.   6. The transflective liquid crystal device according to claim 5, wherein the layer thickness adjusting layer is a transparent layer selectively formed in the reflective display region.   6. The transflective liquid crystal device according to claim 5, wherein the layer thickness adjusting layer is a transparent layer that is thick in the reflective display region and thinner in the transmissive display region than in the reflective display region.   8. The transflective liquid crystal device according to claim 6, wherein a color filter is formed on the pixel on a surface of the second transparent substrate on the liquid crystal layer side.   8. The liquid crystal layer-side surface of the second transparent substrate according to claim 6, wherein the transmissive display area of the pixel is transmissively displayed on one of the upper layer side and the lower layer side of the transparent layer. The transflective type is characterized in that a reflective color filter is formed on the same side of the transparent layer as the transmissive display color filter in the reflective display area. Liquid crystal device.   8. The color for transmissive display on one of the upper layer side and the lower layer side of the transparent layer in the transmissive display region of the pixel is formed on the surface of the second substrate on the liquid crystal layer side. A transflective liquid crystal device, wherein a filter is formed, and a reflective display color filter is formed in the reflective display region on the opposite side of the transparent layer from the transparent display color filter.   11. The transflective liquid crystal device according to claim 9, wherein the transmissive display color filter has a wider chromaticity range than the reflective display color filter.   12. The transflective liquid crystal device according to claim 11, wherein the transmissive display color filter has a wide chromaticity range due to a difference in color material type or blending amount from the reflective display color filter.   13. The transflective liquid crystal device according to claim 9, wherein the transmissive display color filter and the second color filter have the same film thickness.   14. The transflective liquid crystal device according to claim 9, wherein the reflective display color filter is thicker than the transmissive display color filter.   6. The layer thickness adjusting layer according to claim 5, wherein the transmissive display color filter formed thin in the transmissive display region and the thicker than the transmissive display color filter in the reflective display region among the pixels. A transflective liquid crystal device comprising a color filter for reflective display.   16. The transmissive display color filter according to claim 15, wherein the transmissive display color filter is formed of a first color material layer that is thin and has a wide chromaticity range, and the reflective display color filter is thicker than the first color material layer and has a color. A transflective liquid crystal device comprising a second color material layer having a narrow frequency range.   16. The transmissive display color filter according to claim 15, wherein the transmissive display color filter includes a first color material layer, and the reflective display color filter includes a first color material layer formed integrally with the transmissive display color filter. A transflective liquid crystal device comprising: a second color material layer laminated on an upper layer or a lower layer side of the first color material layer.   An electronic apparatus comprising a transflective liquid crystal device as defined in any one of claims 1 to 17 in a display portion.

Images