JP2007285906A - Charged particle beam system and measuring parameter setting method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To determine the optimum pattern dimension measuring condition of a charged particle beam system, in consideration of both a shrink amount (or deviation from a true value of a length measurement value) and a reproduction error amount. <P>SOLUTION: It is found that the shrink amount and the measurement reproduction error amount have a trade-off relation mutually. It is also found that, even in the case of the same shrink amount, the measurement reproduction error amount is differentiated according to measuring parameters (an acceleration voltage, a current amount, an observation magnification or the number of frames) for determining irradiation energy or the like of a primary charged particle beam 11. Hereby, an experimental plan is formed by using an orthogonal table wherein at least two of the acceleration voltage, the current amount, the observation magnification or the number of frames which are the measuring parameters are used as factors, and an experiment for measuring the shrink amount and the measurement reproduction error amount of a semiconductor device 13 is executed. Then, the shrink amount and the measurement reproduction error amount in a combination of levels of each factor are calculated by multi-way layout from the result of the experiment. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a technique for measuring a circuit pattern of a semiconductor device using a charged particle beam.

  As a technique for measuring a circuit pattern of a semiconductor device, there is a charged particle beam system. The charged particle beam system irradiates a semiconductor device with a primary charged particle beam and detects secondary charged particles generated thereby. Then, the detected secondary charged particles are imaged and displayed.

  In recent years, miniaturization of semiconductor devices has progressed, and accordingly, a light source having a shorter wavelength is desired as a light source used in a lithography process. Currently, an ArF excimer laser (wavelength 193 nm) having a shorter wavelength than that of a KrF excimer laser (wavelength 248 nm) is being studied.

  By the way, when a primary charged particle beam of a charged particle beam system is irradiated onto an ArF excimer laser photoresist (hereinafter referred to as an ArF resist), the pattern size of the ArF resist changes. This phenomenon is called shrink. A low-k material is known as a material for shrinking other than ArF resist. The low-k material is also promising as a next-generation semiconductor material like the ArF resist.

This shrink hinders accurate pattern dimension measurement of a semiconductor device by a charged particle beam system. With respect to shrinking, Patent Document 1 discloses a charged particle beam system by setting the irradiation energy of the primary charged particle beam of the charged particle beam system to 300 eV or less or the irradiation density to 1.4 C / m ² or less. A technique for suppressing the amount of shrinkage generated when observing a low-k material to 2.4 nm or less is disclosed. Further, Patent Document 2 describes that the external environment is affected by the relationship between the resist pattern line width thickening phenomenon caused by the contamination in the chamber of the charged particle beam system and the contamination generated from the semiconductor device, and the number of pattern dimension measurements. A technique for calculating a shrink amount that is not performed is disclosed.

JP 2004-227879 A JP 2005-217161 A

According to the technique described in Patent Document 1, when observing a low-k material by setting the irradiation energy of the primary charged particle beam to 300 eV or less or setting the irradiation density to 1.4 C / m ² or less. Can be suppressed to 2.4 nm or less. Further, according to the technique described in Patent Document 2, it is possible to calculate the shrink amount that is not affected by the external environment. However, these techniques do not consider the measurement reproducibility error amount. Even if the shrink amount can be reduced by the technique described in Patent Document 1, or even if the shrink amount can be calculated by the technique described in Patent Document 2, the measurement reproducibility error amount is large. Therefore, the dimensional management of the semiconductor device cannot be performed with high accuracy.

  The present invention has been made in view of the above circumstances, and an object of the present invention is to consider charged particles in consideration of both a shrink amount (or a deviation amount from a true value of a length measurement value) and a measurement reproducibility error amount. An object of the present invention is to provide a technique for determining an optimum pattern dimension measurement condition for a line system.

  The present inventors have found that there is a trade-off relationship between the shrink amount (or the amount of deviation from the true value of the measurement value) and the measurement reproducibility error amount. In addition, measurement parameters (acceleration voltage, current amount, observation magnification, number of frames) that determine the irradiation energy or irradiation density of the primary charged particle beam even with the same shrinkage amount (or deviation from the true value of the measurement value) ) Found that the measurement reproducibility error amount differs. Therefore, in the present invention, an experimental design is made using an orthogonal table whose factors are at least two of the measurement parameters of acceleration voltage, current amount, observation magnification, and number of frames, and the shrinkage amount (or length measurement value) of the semiconductor device. The amount of deviation from the true value) and the measurement reproducibility error amount are measured. Then, the shrink amount (or the deviation amount from the true value of the length measurement value) and the measurement reproducibility error amount in the combination of the levels of the factors are calculated from the experimental results by multi-way arrangement.

For example, the charged particle beam system of the present invention irradiates a semiconductor device with a primary charged particle beam and detects a secondary charged particle generated thereby, thereby measuring a circuit pattern of the semiconductor device. A charged particle beam system comprising: an optical system; a control system that controls the charged particle beam optical system according to a set measurement parameter; and an information processing system that sets a measurement parameter in the control system,
The information processing system
An arithmetic device, a storage device, and a user interface;
The storage device
Storing experimental design table data consisting of orthogonal tables in which at least two measurement parameters of acceleration voltage, current amount, observation magnification, and number of frames are assigned to one of the factors,
The arithmetic unit is
For each experiment number described in the experiment plan table data, a set value indicated by a level of each factor to which a measurement parameter is assigned is set in the control system, and the semiconductor body is provided in the charged particle beam optical system. Experimental data stored in the storage device by measuring a circuit pattern at a plurality of measurement points of the device, calculating a shrinkage amount or a deviation from the true value of the measurement value and a measurement reproducibility error amount from the measurement result Collection process,
For each experiment number described in the experiment plan table data, the set value indicated by the level of each factor to which the measurement parameter is assigned, the deviation amount from the true value of the shrinkage amount or length measurement value, and measurement reproducibility Correlation chart of the amount of deviation from the true value of the shrinkage or length measurement value and the measurement reproducibility error amount for all combinations of setting values indicated by the level of each factor to which the measurement parameter is assigned using the error amount And a measurement condition support process for generating data and outputting the data to the user interface.

According to the present invention, the allowable shrink amount (or length measurement value) is calculated from the calculation result of the shrink amount (or deviation from the true value of the length measurement value) and the measurement reproducibility error amount in the combination of the levels of the factors. In the deviation amount from the true value), it is possible to detect the combination of the levels of the factors that minimize the measurement reproducibility error amount. Accordingly, it is possible to determine the optimum pattern dimension measurement condition of the charged particle beam system in consideration of both the shrinkage amount (or the deviation amount from the true value of the measurement value) and the measurement reproducibility error amount.

  Embodiments of the present invention will be described below with reference to the drawings.

  FIG. 1 is a schematic configuration diagram of a scanning electron microscope system to which an embodiment of the present invention is applied.

  As shown in the figure, the scanning electron microscope system of the present embodiment includes a charged particle beam optical system 10, a material chamber 20, a control system 30, and an information processing system 40.

  The charged particle beam optical system 10 includes an electron gun 101 that emits a primary charged particle beam 11, and a condenser lens 102 and an objective lens 104 that focus the primary charged particle beam 11 emitted from the electron gun 101 on a semiconductor device 13. A deflection coil 103 for two-dimensionally scanning the primary charged particle beam 11 emitted from the electron gun 101 on the semiconductor device 13, and the semiconductor device due to the irradiation of the primary charged particle beam 11 on the semiconductor device 13. And a secondary charged particle detector 105 that detects the secondary charged particles 12 emitted from 13.

  The sample chamber 20 includes a sample stage 201 that moves the semiconductor device 13 in a direction perpendicular to the incident direction of the primary charged particle beam 11.

  The control system 30 controls each part of the charged particle beam optical system 10 according to the measurement parameters (acceleration voltage, current amount, observation magnification, number of frames) set by the information processing system 40. Further, the stage 201 is moved in accordance with a command output from the information processing system 40 so that a desired measurement point of the semiconductor device 13 is positioned at the irradiation position of the primary charged particle beam 11.

  The information processing system 40 includes an arithmetic device 401, a database 402, and a user interface 403.

  The arithmetic unit 401 measures each of the measurement parameters for measuring the shrinkage amount and the reproducibility error amount necessary for detecting the optimum combination of the setting values of the measurement parameters in accordance with instructions received from the operator via the user interface 403. Is generated and registered in the database 402 (experiment plan table generation process).

  Further, the arithmetic unit 401 controls the control system 30 according to the experiment plan table registered in the database 402, and for each combination of set values of the measurement parameters described in the experiment plan table, the semiconductor device 13 The length of the circuit pattern is measured, the amount of shrinkage and the reproducibility error at that time are measured, and registered in the database 402 (experiment data collection process).

  In addition, the arithmetic unit 401 follows the shrink amount and reproducibility error amount for each combination of set values of measurement parameters registered in the database 402, and the shrink amount and reproducibility error amount for all combinations of set values of measurement parameters. Is generated and output to the user interface 403. Further, a combination of setting values of each measurement parameter that optimizes the balance between the shrink amount and the reproducibility error amount is detected and output to the user interface 403 (measurement condition support processing).

  In addition, the arithmetic unit 401 includes inspection recipe information (measurement parameters (acceleration voltage, current amount, observation magnification, number of frames), information on the semiconductor device 13, measurement point position information, etc.) input by the operator via the user interface 403. ), The entire system is controlled via the control system 30, whereby the secondary charged particles 12 detected by the secondary charged particle detector 105 are imaged and output to the user interface 403. A circuit pattern is measured (SEM measurement process).

  Next, an experiment plan table generation process, an experiment data collection process, and a measurement condition support process performed by the arithmetic device 401 will be described. Since the SEM measurement process is the same as the SEM measurement process of the existing scanning electron microscope system, detailed description thereof is omitted.

  First, the experiment plan table generation process will be described.

  FIG. 2 is a flowchart for explaining the experiment plan table generation process.

  This flow is started when the computing device 401 receives an instruction to create an experiment plan table from the operator via the user interface 403.

  First, the arithmetic unit 401 displays an orthogonal table selection screen to the operator via the user interface 403, and accepts designation of an orthogonal table used for creating the experiment plan table data via this selection screen (S101). In this embodiment, one of the L9 orthogonal table 4011 shown in FIG. 3A, the L18 orthogonal table 4012 shown in FIG. 3B, and the L18 orthogonal table 4013 shown in FIG. 3C is selected. Let In FIG. 3, the subscript attached to the factor indicates the level.

  Next, the arithmetic unit 401 determines a level table used in the orthogonal table designated in S101 (S102). The level table is uniquely determined by the orthogonal table. When the L9 orthogonal table 4011 is selected, the level table 4014 shown in FIG. 4A is used. In the level table 4014, each of the four factors A to D has three values. When the L18 orthogonal table 4012 is selected, a level table 4015 shown in FIG. 4B is used. In the level table 4015, among the eight factors A to H, the first factor A in the column number has two values, and the remaining factors B to H have three values. When the L18 orthogonal table 4013 is selected, the level table 4016 shown in FIG. 4C is used. In this level table 4016, among the eight factors A to H, the combination of the first factor A and the second factor B in the column number has six values, and the remaining factors C to H have three values. In FIG. 4, the suffix attached to the factor indicates the level.

  Next, the computing device 401 receives designation from the operator via the user interface 403 as to which factor of the orthogonal table designated in S101 is assigned the measurement parameter (S103). The present inventors have found that the shrink amount and the measurement reproducibility error amount are in a trade-off relationship. Further, it was found that the measurement reproducibility error amount differs depending on the measurement parameter for determining the irradiation energy or irradiation density of the primary charged particle beam 11 even if the shrink amount is the same. Therefore, in this embodiment, at least two of the four measurement parameters “acceleration voltage”, “current amount”, “observation magnification”, and “number of frames” that determine the irradiation energy or irradiation density of the primary charged particle beam 11 are determined. Is assigned to any factor of the specified orthogonal table.

  Next, in accordance with the level table determined in S102, the arithmetic unit 401 accepts specification of the value of each level for each factor to which the measurement parameter is assigned in S103 (S104). For example, the orthogonal table specified in S101 is the L18 orthogonal table 4012 shown in FIG. 3B. In S103, each of the four measurement parameters “acceleration voltage”, “current amount”, “observation magnification”, and “number of frames” are displayed. Is assigned to the factors C, B, F, and G of the L18 orthogonal table 4012. The level table used in the L18 orthogonal table 4012 is the level table 4015 shown in FIG. 4B. Therefore, the factors C, B, F, and G each have three values (levels). Therefore, the arithmetic unit 401 accepts designation of three values for each of the four measurement parameters “acceleration voltage”, “current amount”, “observation magnification”, and “number of frames”. These values may be determined by the operator based on experience in consideration of the specifications of the charged particle beam system and the dimensions and materials of the semiconductor device 13 to be measured.

  Next, the arithmetic unit 401 assigns a measurement parameter to the factor according to the specification received from the operator at S103 in the orthogonal table specified at S101, and sets the level of each factor according to the specification received from the operator at S104. To create experimental plan table data of the charged particle beam system for finding the optimum measurement parameter setting values. Then, identification information (type information, material information, etc. of the semiconductor device 13) received from the operator via the user interface 403 is added to the created experiment plan table data and registered in the database 402 (S105).

  FIG. 5 is a diagram schematically showing the experimental plan table data. As shown in the figure, the experiment plan table data 4017 is obtained by assigning measurement parameters to factors according to the specified contents received from the operator in the orthogonal table designated by the operator, and uniquely identifies the experiment plan table data 4017. Identification information 40171 is provided for this purpose. In the example shown in FIG. 5, in the L18 orthogonal table 4012 shown in FIG. 3B, the four measurement parameters “acceleration voltage”, “current amount”, “observation magnification”, and “number of frames” are factors C and B, respectively. , F, and G are shown. The level of each factor is 300 (V), 600 (V), and 900 (V) for level 1, level 2 and level 3 of the measurement parameter “acceleration voltage”, respectively. 1, level 2 and level 3 are 4 (pA), 8 (pA) and 12 (pA), respectively, and level 1, level 2 and level 3 of the measurement parameter “observation magnification” are 100 (k) and 150 ( k), 200 (k), and the level 1, level 2, and level 3 of the measurement parameter “number of frames” are 16, 8, and 4, respectively. For other factors A, D, E, and H to which no measurement parameter is assigned, null values “null” are set in all levels 1 to 3. In FIG. 5, reference numeral 40172 denotes a column for registering measurement data of the shrink amount (sensitivity). Reference numeral 40173 denotes a column for registering measurement data of the reproducibility error amount (S / N ratio). In an initial state, a null value “null” is registered.

  Next, experimental data collection processing will be described.

  FIG. 6 is a flowchart for explaining the experimental data collection process.

  This flow is started when the arithmetic unit 401 receives an experiment data collection instruction from the operator via the user interface 403.

  First, the arithmetic unit 401 accepts designation of identification information of the experiment plan table data from the operator via the user interface 403 (S201). Next, the arithmetic unit 401 reads out the experiment plan table data having the identification information received from the operator from the database 402 (S202). Further, the counter value n used for extracting the experiment record from the experiment plan table data is set to the initial value (= 1) (S202).

  Next, the computing device 401 extracts the record of experiment n from the experiment plan table data, and reads the measurement parameter assigned to the factor in this record (S204). For example, in the case of the experiment plan table data (identification information: 0001) shown in FIG. 5, in the record of experiment No. 1, the acceleration voltage assigned to the factors C, B, F, and G: 300 (V), the current amount: 4 (pA), magnification: 100 (k), number of frames: 16 are read out, and in the record of Experiment No. 2, acceleration voltage assigned to factors C, B, F, G: 600 (V), Current amount: 4 (pA), magnification: 150 (k), and number of frames: 8 are read.

  Next, the arithmetic unit 401 sets the read measurement parameter in the control system 30 (S205). Further, the counter value m used for specifying the measurement point of the semiconductor device 13 as a sample is set to an initial value (= 1) (S206).

  Next, the arithmetic device 401 reads the position information of the mth measurement point from the position information of each measurement point of the semiconductor device 13 registered in advance in the database 402, for example. Then, the read position information is set in the control system 30. In response to this, the control system 30 irradiates the primary charged particle beam 11 of the charged particle beam optical system 10 at the site (m-th measurement point) of the semiconductor device 13 specified by the position information set by the arithmetic unit 401. The sample stage 201 is controlled so as to be in the position. Then, the charged particle beam optical system 10 is controlled so that the circuit pattern at the m-th measurement point is measured with the measurement parameter set by the arithmetic unit 401. Thus, the circuit pattern is measured a plurality of times at the m-th measurement point (S207).

Next, the arithmetic unit 401 calculates the shrink amount at the m-th measurement point using the length measurement result of the circuit pattern performed a plurality of times at the m-th measurement point (S208). For example, the shrinkage amount (L _j −L _{j + is} obtained by subtracting the measurement value L _{j + 1} of the circuit pattern measured at the j + 1th time from the measurement value L _j of the circuit pattern measured at the jth time. ₁ ) is calculated.

  Next, the arithmetic unit 401 determines whether or not the circuit pattern has been measured at all the measurement points of the semiconductor device 13 registered in advance in the database 402 (S209). If there is an unexecuted measurement point (NO in S209), the counter value m is incremented by 1 (S213), and the process returns to S207.

On the other hand, when there is no measurement point that has not been performed (YES in S209), the arithmetic device 401 obtains the average shrinkage amount at each measurement point, and sets this as the shrinkage amount s of experiment n. Then, this shrink amount s is registered as sensitivity S (= s) in the field 40172 of the record of experiment n (S210). Then, the arithmetic unit 401 sets the variation in the shrinkage amount at each measurement point (three times the square root σ of the dispersion of the shrinkage amount s) as the measurement reproducibility error amount 3σ of experiment n. Then, the SN ratio η (= 10 × log (1 / σ ² )) is obtained using the measurement reproducibility error amount 3σ, and this is registered in the field 40173 of the record of experiment n (S211). Then, the process proceeds to S212.

  In S212, the arithmetic unit 401 checks whether or not the measurement of the circuit pattern of the semiconductor device 13 has been performed on all the experiment records registered in the experiment plan table data. If there is a record of an unexecuted experiment (NO in S212), the counter value n is incremented by one (S243), and the process returns to S204. On the other hand, if all the experiment records have been carried out (YES in S212), this flow ends.

  FIG. 7 is a diagram schematically showing experimental design table data in which the sensitivity S and the SN ratio η are registered. Here, in the experiment plan table data (identification information: 0001) shown in FIG. 5, sensitivity S and SN ratio η are registered in fields 40172 and 40173 of all records of experiment No. 1 to experiment No18. ing.

  Next, the measurement condition support process will be described.

  FIG. 8 is a flowchart for explaining the measurement support process.

  This flow is started when the arithmetic device 401 receives a measurement condition support instruction from the operator via the user interface 403.

  First, the arithmetic unit 401 accepts designation of identification information of experimental plan table data for which experimental data has been collected from the operator via the user interface 403 (S301). Next, the arithmetic unit 401 reads out the experiment plan table data having the identification information received from the operator from the database 402 (S302). Then, using the combination of the level values of each factor stored in the experimental design table data and the experimental result (sensitivity S, SN ratio η) of the combination, all of the factors assigned with the measurement parameters Multi-element arrangement data indicating the shrink amount s and the reproducibility error amount 3σ for each combination of level values is generated (S303). This multi-element arrangement data generation process will be described later.

  Next, the arithmetic unit 401 generates correlation chart data indicating the correlation between the shrink amount s and the reproducibility error amount 3σ in each combination of all levels of each factor as shown in FIG. Here, each of the points 4031 indicates the correlation between the shrink amount s and the reproducibility error amount 3σ in the combination of the level values of the factors to which the measurement parameters described in the experimental design table data are assigned (S304). .

  Next, the arithmetic unit 401 generates correlation analysis screen data as shown in FIG. 10 using the correlation chart data and displays it on the user interface 403 (S305).

  In FIG. 10, reference numeral 4032 is a display column for the correlation chart data created in S304. The operator can designate a desired point 4031 by operating the cursor 4039. Reference numeral 4033 is a display field indicating the level value of each factor to which the measurement parameter is assigned, corresponding to the designated point 4031. Here, as the level value of each factor to which the measurement parameter is assigned, set values for acceleration, current amount, magnification, and the number of frames are shown.

  Reference numeral 4034 indicates a combination of level values of the factors to which the measurement parameter is assigned corresponding to the specified point 4031, that is, a display field indicating the evaluation value r for the combination of setting values displayed in the display field 4033. It is. In the present embodiment, the arithmetic device 401 calculates the evaluation value r by the following equation using the shrink amount s and the reproducibility error amount 3σ at the designated point 4031. The smaller the evaluation value r, the higher the evaluation.

r = √ (a × s ² + b × (3σ) ² )
However, a, b = const
Reference numeral 4035 is a search button for searching for a point 4031 having the highest evaluation among the points 4031 shown in the correlation chart data in the display field 4032. Reference numeral 4036 is a creation button for instructing automatic creation of an inspection recipe for measuring the circuit pattern of the semiconductor device 13 using the set values of the respective measurement parameters displayed in the display field 4033. Reference numeral 4035 denotes an end button for instructing cancellation of the inspection recipe creation.

  When a point 4031 is designated by the operator via the correlation analysis screen as shown in FIG. 10 (YES in S306), the arithmetic unit 401 sets the set values of the respective measurement parameters corresponding to the designated point 4031. Displayed in the display field 4033. Further, the evaluation value r of the designated point 4031 is calculated and displayed on the display field 4034 (S307).

  When the optimum condition search button 4035 is designated by the operator via the correlation analysis screen as shown in FIG. 10 (YES in S308), the arithmetic unit 401 displays each of the correlation chart data shown in the display field 4032. An evaluation value r of the point 4031 is calculated (S309). Then, the arithmetic unit 401 specifies the point 4031 where the highest evaluation value r is calculated, displays the evaluation value r of the point 4031 in the display column 4034, and sets each measurement parameter corresponding to the point 4031. The set value is displayed in the display field 4033. In the display field 4032, the point 4031 is displayed so that it can be distinguished from other points 4031 (S310).

  Also, when the recipe creation button 4036 is designated by the operator via the correlation analysis screen as shown in FIG. 10 (YES in S311), the arithmetic unit 401 uses the existing technology to display each of the displayed items in the display column 4033. Inspection recipe data of the semiconductor device 13 including the set value of the measurement parameter is automatically generated (S312). Then, identification information (type information of the semiconductor device 13, material information, identification information of the experiment plan table data, etc.) is added to the created inspection recipe data and registered in the database 402, and this flow is finished. Also, when the end button 4037 is designated (YES in S313), this flow is ended.

  Next, multi-element arrangement data generation processing (S303 in FIG. 8) will be described.

  FIG. 11 is a flowchart for explaining the multi-placement data generation process (S303 in FIG. 8).

  First, the arithmetic unit 401 generates auxiliary table data of sensitivity S as shown in FIG. 12A based on the experiment plan table data (S3021). Here, the generation of the auxiliary table data of the sensitivity S will be specifically described by taking the experiment plan table data shown in FIG. 7 as an example.

  Attention is paid to the first factor A in the column number of the experimental design table data. According to the level table shown in FIG. 4B, the factor A takes two levels (level 1 and level 2). A record whose factor A is level 1 is searched from the experimental design table data. From the L18 orthogonal table 4012 shown in FIG. 3B, it can be seen that the record whose factor A is level 1 is the record of Experiment No. 10 to Experiment No. 18. Therefore, the records of experiment No. 10 to experiment No. 18 are searched from the experiment plan table data. Then, the average of the sensitivity S registered in the field 40172 of the retrieved record is calculated, and this is registered in the entry 40181 corresponding to the level 1 of the factor A of the auxiliary table data 4018 of the sensitivity S. The level 2 of the factor A is processed in the same manner to calculate the average of the sensitivity S, and this is registered in the entry 40181 corresponding to the level 2 of the factor A in the auxiliary table data 4018 of the sensitivity S.

  Next, attention is focused on the second factor B (current amount) in the column number of the experimental design table data. According to the level table shown in FIG. 4B, the factor B (current amount) takes three levels (level 1, level 2, level 3). First, a record whose factor B is level 1 is searched from the experimental design table data. From the L18 orthogonal table 4012 shown in FIG. 3B, it can be seen that the records whose factor B is level 1 are the records of Experiment No. 1 to Experiment No. 3, Experiment No. 10 to Experiment No. 13. Therefore, records of experiment No. 1 to experiment No. 3, experiment No. 10 to experiment No. 13 are searched from the experiment plan table data. Then, the average of the sensitivity S registered in the field 40172 of the searched record is calculated, and this is registered in the entry 40181 corresponding to the level 1 of the factor B (current amount) of the auxiliary table data 4018 of the sensitivity S. The same processing is performed for the level 2 and level 3 of the factor B to calculate the average of the sensitivity S, and this is registered in the entry 40181 corresponding to the level 2 and level 3 of the factor B in the auxiliary table data 4018 of the sensitivity S.

  The above processing is repeated until the last factor H in the column number of the experiment plan table data. Thus, auxiliary table data 4018 in which the sensitivity S is registered for each level is created for each factor A to H described in the experimental design table data as shown in FIG.

  Next, the arithmetic unit 401 generates auxiliary table data of the SN ratio η as shown in FIG. 12B based on the experiment plan table data (S3022). Here, taking the experimental design table data shown in FIG. 7 as an example, the generation of auxiliary table data of the SN ratio η will be specifically described.

  Attention is paid to the first factor A in the column number of the experimental design table data. According to the level table shown in FIG. 4B, the factor A takes two levels (level 1 and level 2). A record whose factor A is level 1 is searched from the experimental design table data. From the L18 orthogonal table 4012 shown in FIG. 3B, it can be seen that the record whose factor A is level 1 is the record of Experiment No. 10 to Experiment No. 18. Therefore, the records of experiment No. 10 to experiment No. 18 are searched from the experiment plan table data. Then, the average of the SN ratio η registered in the field 40172 of the retrieved record is calculated, and this is registered in the entry 40191 corresponding to the level 1 of the factor A of the auxiliary table data 4019 of the SN ratio η. The level A of the factor A is similarly processed to calculate the average of the SN ratio η, and this is registered in the entry 40191 corresponding to the level 2 of the factor A in the auxiliary table data 4019 of the SN ratio η.

  Next, attention is focused on the second factor B (current amount) in the column number of the experimental design table data. According to the level table shown in FIG. 4B, the factor B (current amount) takes three levels (level 1, level 2, level 3). First, a record whose factor B is level 1 is searched from the experimental design table data. From the L18 orthogonal table 4012 shown in FIG. 3B, it can be seen that the records whose factor B is level 1 are the records of Experiment No. 1 to Experiment No. 3, Experiment No. 10 to Experiment No. 13. Therefore, records of experiment No. 1 to experiment No. 3, experiment No. 10 to experiment No. 13 are searched from the experiment plan table data. Then, the average of the SN ratio η registered in the field 40172 of the searched record is calculated, and this is registered in the entry 40191 corresponding to the level 1 of the factor B (current amount) of the auxiliary table data 4019 of the SN ratio η. . The same processing is performed for the level 2 and level 3 of the factor B to calculate the average of the SN ratio η, and this is registered in the entry 40191 corresponding to the level 2 and level 3 of the factor B in the auxiliary table data 4019 of the SN ratio η. To do.

  The above processing is repeated until the last factor H in the column number of the experiment plan table data. Thereby, auxiliary table data 4019 in which the SN ratio η is registered for each level is created for each factor A to H described in the experimental design table data as shown in FIG.

  Next, the arithmetic unit 401 uses the auxiliary table data 4018 for the sensitivity S and the auxiliary table data 4019 for the SN ratio η to generate factor effect diagram data for each factor A to H described in the experiment plan table data. (S3023 to S3025). Here, the generation of the factor effect diagram data of each factor A to H will be specifically described by taking the auxiliary table data 4018 and 4019 shown in FIGS. 12A and 12B as examples.

  First, attention is focused on the first factor A in the column number of the experiment plan table data (S3023). Each sensitivity S registered in each entry 40181 corresponding to level 1 and level 2 of factor A is extracted from auxiliary table data 4018 and plotted in the factor effect diagram of factor A. Similarly, each SN ratio η registered in each entry 40191 corresponding to level 1 and level 2 of factor A is extracted from auxiliary table data 4019 and plotted in the factor effect diagram of factor A. Thereby, the factor effect diagram data 4041 of factor A shown in FIG. 13A is generated and registered in the database 402 (S3024).

  Next, it is determined whether or not the factor A is the last factor in the column number of the experiment plan table data (S3025). Since the factor A is not the last factor in the column number of the experiment plan table data, the process returns to S3023 and pays attention to the second factor B (current amount) in the column number of the experiment plan table data. Each sensitivity S registered in each entry 40181 corresponding to level 1, level 2, and level 3 of factor B is extracted from auxiliary table data 4018 and plotted in the factor effect diagram of factor B. Similarly, each SN ratio η registered in each entry 40191 corresponding to level 1, level 2, and level 3 of factor B is extracted from auxiliary table data 4019 and plotted in the factor effect diagram of factor B. Thereby, the factor effect diagram data 4042 of factor B shown in FIG. 13B is generated and registered in the database 402 (S3024).

  The above processing is repeated until the last factor H in the column number of the experiment plan table data. Thereby, the factor effect diagram data 4041 to 4048 of the factors A to H shown in FIGS. 13A to 13H are generated and registered in the database 402 (S3023 to S3025). These factor effect diagram data 4041 to 4048 may be displayed on the user interface 403 in accordance with an instruction from the operator.

  Next, the computing device 401 selects an unselected combination from all combinations of levels (combinations arranged in a multiple manner) that can be taken by each factor to which the measurement parameter is assigned (S3026). Note that the multi-way combination can be created from the level table used for the orthogonal table adopted by the experiment plan table data. For example, in the case of the experimental design table data shown in FIG. 7, among the level tables corresponding to the L18 orthogonal table 4012 (level table shown in FIG. 4B) shown in FIG. , C, F, and G are generated at all levels to generate a multi-way combination.

  Next, the arithmetic unit 401 calculates the sensitivity S and the SN ratio η corresponding to the combination selected in S3026 (S3027).

Specifically, the sensitivity S is calculated in the following manner. First, the sensitivity S corresponding to the level of the factor included in the selected combination is retrieved from the factor effect diagram data of the factor registered in the database 402, and this is stored in the cumulative value ΣS (initial value 0) of the sensitivity S. ). This process is performed for each of the factors included in the selected combination. Next, the average value S _ave of the sensitivity S plotted in the factor effect diagram data of each factor registered in the database 402 is calculated. Using the cumulative value ΣS and the average value S _ave calculated as described above, the sensitivity S corresponding to the combination selected by the following equation is calculated.

S = S _ave + (ΣS-4S _ave )
Further, the SN ratio η is calculated in the following manner. First, the SN ratio η corresponding to the level of the factor included in the selected combination is retrieved from the factor effect diagram data of the factor registered in the database 402, and this is obtained as a cumulative value Ση (initial value of the SN ratio η Add to the value 0). This process is performed for each of the factors included in the selected combination. Next, an average value η _ave of the SN ratio η plotted in the factor effect diagram data of each factor registered in the database 402 is calculated. By using cumulative Ση and average value eta _ave is calculated as described above, it calculates the SN ratio eta corresponding to the combination selected by the following equation.

η = η _ave + (Ση-4η _ave )
Next, the arithmetic unit 401 converts the sensitivity S and SN ratio η calculated in S3027 into a shrink amount s and a reproducibility error amount 3σ, respectively, and registers them in the database 402 in association with the combination selected in S3026. (S3028). As described above, there is a relationship of S = s between the sensitivity S and the shrink amount s. Therefore, the sensitivity S is set to the shrink amount s as it is. Further, there is a relationship of η = 10 × log (1 / σ ² ) between the SN ratio η and the reproducibility error amount 3σ. Accordingly, the SN ratio η is substituted into this equation to obtain σ, and this is multiplied by 3 to calculate the reproducibility error amount 3σ.

  Next, the computing device 401 determines whether or not all of the multi-arranged combinations have been selected (S3029). If there is an unselected combination (NO in S3029), the process returns to S3026. On the other hand, if there is no unselected combination (YES in S3029), the multi-element arrangement data has been completed, so this flow ends.

  The embodiment of the present invention has been described above.

  According to the present embodiment, the operator can measure reproducibility at an allowable shrink amount from the calculation result of the shrink amount and measurement reproducibility error amount in the combination of setting values of each measurement parameter displayed on the user interface 403. It is possible to know the combination of the setting values of each measurement parameter with the smallest error amount. Therefore, it is possible to determine the optimum pattern length measurement condition of the scanning electron microscope system in consideration of both the shrinkage amount and the reproducibility error amount.

  Further, in the present embodiment, the arithmetic device 401 detects a combination of measurement parameter setting values having the smallest evaluation value r and displays it on the user interface 403. By using this combination to determine the pattern measurement conditions for the scanning electron microscope system, it becomes possible to determine the optimum pattern measurement conditions for the scanning electron microscope system without depending on the operator's experience. It is possible to reduce the variation among operators of length measurement conditions.

  FIG. 14 is a diagram in which several points (estimated values) 4031 plotted in the correlation chart data are actually plotted with the results (experimental values) 4032 actually measured with combinations of measurement parameter setting values corresponding to the points. FIG. When the accuracy of the estimated value is estimated from the experimental value, it can be seen that both the shrink amount and the measurement reproducibility error amount can be estimated with an accuracy within 0.3 nm. Therefore, it can be seen that the optimum pattern length measurement condition of the scanning electron microscope system can be determined by using the correlation chart data.

  In addition, this invention is not limited to said embodiment, Many deformation | transformation are possible within the range of the summary.

  For example, when the arithmetic unit 401 accepts designation of the allowable shrinkage amount from the operator via the user interface 403, the display unit 4032 of the correlation analysis screen illustrated in FIG. Alternatively, correlation chart data in which only the shrink amount point 4031 is plotted may be displayed.

Further, for each factor to which the measurement parameter is assigned, the arithmetic unit 401 calculates the level, the shrink amount at that level, and the measurement reproducibility error amount for each level plotted in the factor effect diagram data of the factor. By substituting into a predetermined function (for example, a polynomial), a correlation function indicating a measurement reproducibility and a shrinkage amount between values (interpolated values) between level values is obtained by regression analysis, and the interpolation represented by this correlation function curve 4033 _{1-4033 4,} as shown in FIG. 16 may be displayed superimposed on the correlation chart data to be displayed on the display field 4032 of the correlation analysis screen illustrated in FIG. 10. The operator, by viewing the correlation chart data within挿曲lines 4033 _{1 to 4033 4} are superimposed, shrinkage less than multiple-arranged combinations, and facilitates the setting value of less measurement parameters of measurement reproducibility error amount It becomes possible to find out.

In the example shown in FIG. 16, it can be seen that the balance between the shrinkage amount and the measurement reproducibility error amount is optimal in the region A. Therefore, the arithmetic unit 401 specifies the shrink amount and the measurement reproducibility error amount at the points in the region A on the curve designated by the operator via the user interface 403, and interpolates the observation magnification passing through the region A. the correlation function representing the curve 4033 _3, by substituting the specified shrinkage and measurement reproducibility error amount, calculated observation magnification set value (level value) to the user interface 403.

  In the present embodiment, in order to detect the optimum setting value of the measurement parameter, it is necessary to clarify the dependency of the measurement parameter by greatly shaking the level value of each factor to which the measurement parameter is assigned in the experimental design table data. preferable. In addition, since the number of experiments in the orthogonal table increases dramatically when the number of levels is increased, it is realistic to use up to 3 levels at most. For this reason, the level value (measurement parameter setting value) used in the experiment is not necessarily the optimum measurement parameter setting value. Therefore, as shown in FIG. 16, the combination with estimation by interpolation makes it easy to detect the optimum measurement parameter.

  Further, in the above embodiment, the deviation s ′ from the true value of the circuit pattern length measurement value of the semiconductor device 13 can be used instead of the shrink amount s. However, the true value of the circuit pattern length at each measurement point of the semiconductor device 13 needs to be registered in the database 402 in advance. Then, in S207 of FIG. 6, the arithmetic device 401 obtains a difference between the circuit pattern length measurement value at the m-th measurement point and the true value of the circuit pattern length at the m-th measurement point, and this difference is expressed as m. The deviation s ′ from the true value of the circuit pattern length measurement value at the th measurement point is assumed.

  By doing so, as in the above-described embodiment, the combination of the set values of the measurement parameters with a small deviation from the true value of the circuit pattern measurement value and a small measurement reproducibility error amount can be easily found. It becomes possible. Note that the circuit pattern length measurement value of the semiconductor device 13 itself may be used as the value displayed in the correlation chart data, instead of the deviation s ′ from the true value of the circuit pattern length measurement value of the semiconductor device 13.

  In the scanning electron microscope system of the above-described embodiment, the control system 30 may be realized in hardware by an integrated logic IC such as an application specific integrated circuit (ASIC) or a field programmable gate array (FPGA). Alternatively, it may be realized by software by a computer such as a DSP (Digital Signal Processor).

  The information processing system 40 (the arithmetic device 401, the database 402, and the user interface 403) receives information from an external storage device such as a CPU, a memory, and an HDD, and a portable storage medium such as a CD-ROM and a DVD-ROM. A general computer having a reading device for reading, an input device such as a keyboard and a mouse, an output device such as a display, a communication device for communicating with a partner device via a communication line, and a bus connecting these devices This can be realized by the CPU executing a predetermined program loaded on the memory.

  Further, as shown in FIG. 17, by sharing the database 402 with the network, the experiment plan table data and the inspection recipe may be shared by the plurality of scanning electron microscope systems of the above-described embodiments. Alternatively, as shown in FIG. 18, by sharing the information processing system 40 on the network, the operator can perform various settings for the control system 30 of the scanning electron microscope system according to the plurality of embodiments from the same user interface 403. It doesn't matter.

  In the above embodiment, the case where the present invention is applied to a scanning electron microscope system has been described as an example. However, the present invention is not limited to this, and can be applied to other charged particle beam application apparatuses such as an electron beam drawing apparatus and an ion beam irradiation apparatus. The sample to be measured is not limited to a semiconductor device.

FIG. 1 is a schematic configuration diagram of a scanning electron microscope system to which an embodiment of the present invention is applied. FIG. 2 is a flowchart for explaining the experiment plan table generation process. 3A is a diagram showing an L9 orthogonal table, FIG. 3B is a diagram showing an L18 orthogonal table, and FIG. 3C is a diagram showing an L18 orthogonal table. 4A is a diagram showing a level table used for the L9 orthogonal table shown in FIG. 3A, and FIG. 4B is a diagram showing a level table used for the L18 orthogonal table shown in FIG. 3B. FIG. 4C shows a level table used for the L18 orthogonal table shown in FIG. 3C. FIG. 5 is a diagram schematically showing the experimental plan table data. FIG. 6 is a flowchart for explaining the experimental data collection process. FIG. 7 is a diagram schematically showing experimental design table data in which the sensitivity S and the SN ratio η are registered. FIG. 8 is a flowchart for explaining the measurement support process. FIG. 9 is a diagram schematically showing the correlation chart data. FIG. 10 is a diagram schematically showing the correlation analysis screen data. FIG. 11 is a flowchart for explaining the multi-placement data generation process (S303 in FIG. 8). FIG. 12A is a diagram schematically illustrating generation of auxiliary table data of sensitivity S, and FIG. 12B is a diagram schematically illustrating auxiliary table data of SN ratio η. FIGS. 13A to 13H are diagrams schematically showing factor effect diagram data of factors A to H. FIG. FIG. 14 is a diagram in which several estimated values plotted in the correlation chart data are plotted by superimposing experimental values actually measured with combinations of measurement parameter setting values corresponding to the estimated values. FIG. 15 is a diagram schematically showing the correlation chart data. FIG. 16 is a diagram schematically showing the correlation chart data. FIG. 17 is a diagram showing a modification of the scanning electron microscope system to which an embodiment of the present invention is applied. FIG. 18 is a diagram showing a modification of the scanning electron microscope system to which an embodiment of the present invention is applied.

Explanation of symbols

10: charged particle beam optical system, 11: primary charged particle beam, 12: secondary charged particle, 13: semiconductor device, 20: document room, 30: control system, 40: information processing system, 101: electron gun, 102: Condenser lens, 103: Deflection coil, 104: Objective lens, 105: Secondary charged particle detector, 201: Sample stage, 401: Computing device, 402: Database, 403: User interface

Claims (11)

A charged particle beam optical system for measuring a circuit pattern of the semiconductor device by irradiating a semiconductor device with a primary charged particle beam and detecting secondary charged particles generated thereby, and according to a set measurement parameter A charged particle beam system comprising: a control system that controls a charged particle beam optical system; and an information processing system that sets a measurement parameter in the control system,
The information processing system
An arithmetic device, a storage device, and a user interface;
The storage device
Storing experimental design table data consisting of orthogonal tables in which at least two measurement parameters of acceleration voltage, current amount, observation magnification, and number of frames are assigned to one of the factors,
The arithmetic unit is
For each experiment number described in the experiment plan table data, a set value indicated by a level of each factor to which a measurement parameter is assigned is set in the control system, and the semiconductor body is provided in the charged particle beam optical system. Experimental data stored in the storage device by measuring a circuit pattern at a plurality of measurement points of the device, calculating a shrinkage amount or a deviation from the true value of the measurement value and a measurement reproducibility error amount from the measurement result Collection process,
For each experiment number described in the experiment plan table data, the set value indicated by the level of each factor to which the measurement parameter is assigned, the deviation amount from the true value of the shrinkage amount or length measurement value, and measurement reproducibility Correlation chart of the amount of deviation from the true value of the shrinkage or length measurement value and the measurement reproducibility error amount for all combinations of setting values indicated by the level of each factor to which the measurement parameter is assigned using the error amount A charged particle beam system, comprising: a measurement condition support process that generates data and outputs the data to the user interface. The charged particle beam system according to claim 1,
In the experimental data collection process, the computing device is:
For each experiment number described in the experiment plan table data, a set value indicated by a level of each factor to which a measurement parameter is assigned is set in the control system, and the semiconductor body is provided in the charged particle beam optical system. Measure the circuit pattern multiple times at multiple measurement points on the device, calculate the average of the differences between multiple measurement results at each measurement point as the shrink amount, and multiple measurement results at each measurement point A charged particle beam system characterized by calculating the difference in the difference between the two as a measurement reproducibility error amount. The charged particle beam system according to claim 1,
The storage device
Storing the true value of the circuit pattern length at each of the plurality of measurement points of the semiconductor device;
In the experimental data collection process, the computing device is:
For each experiment number described in the experiment plan table data, a set value indicated by a level of each factor to which a measurement parameter is assigned is set in the control system, and the semiconductor body is provided in the charged particle beam optical system. Measure the circuit pattern at multiple measurement points on the device, calculate the average difference between the measurement result at each measurement point and the true value as the deviation from the true value of the measurement value, and at each measurement point The charged particle beam system is characterized in that the variation in the difference between the length measurement results is calculated as a measurement reproducibility error amount. The charged particle beam system according to any one of claims 1 to 3,
In the measurement condition support process, the computing device
For each of all combinations of set values indicated by the level of each factor to which the measurement parameter is assigned,
For each factor included in the combination, find the average sensitivity determined from the amount of shrinkage from the experiment number including the level of the factor or the amount of deviation from the true value of the measured value, and for each factor included in the combination The average sum ΣS of the averages of sensitivities obtained in the above, the average S _{ave of} sensitivities determined by the amount of shrinkage or deviation from the true value of the length measurement values for all experiment numbers, and the number of factors A to which the measurement parameters are assigned, Is used to calculate the sensitivity S in the combination by the formula S = S _ave + (ΣS−A × S _ave ), and the amount of shrinkage s or length measurement value in the combination from the calculated sensitivity S is deviated from the true value. Calculating the quantity s,
For each factor included in the combination, the average of the S / N ratio determined from the measurement reproducibility error amount for the experiment number including the level of the factor is obtained, and the average of the S / N ratio determined for each factor included in the combination Ση, the average η _{ave of the} S / N ratio determined from the measurement reproducibility error amount for all the experiment numbers, and the number A of the factors to which the measurement parameters are assigned, and the equation η = η _ave + (Ση− A × η _ave ) is used to calculate the SN ratio η in the combination, and the measurement reproducibility error amount 3σ in the combination is calculated from the calculated SN ratio η. The charged particle beam system according to any one of claims 1 to 4,
In the measurement condition support process, the computing device
Among all the combinations of setting values indicated by the level of each factor to which the measurement parameter is assigned, the amount of shrinkage or the deviation from the true value of the length measurement value within the allowable range received from the operator via the user interface. A charged particle beam system, wherein correlation chart data of a shrinkage amount or a deviation amount from a true value of a measurement value and a measurement reproducibility error amount in a combination is generated and output to the user interface. The charged particle beam system according to any one of claims 1 to 4,
In the measurement condition support process, the computing device
For each factor to which a measurement parameter is assigned
For each factor level, the factor level and the average of the amount of shrinkage from the true value of the measurement value or the measured value and the average of the measurement reproducibility error for the experiment number including the level of the factor By substituting into a given function with the variables, the amount of shrinkage or the deviation of the measured value from the true value, and the measurement reproducibility error amount, the values between the levels of the factor (interpolation) Value), a correlation function indicating the correlation between the amount of shrinkage from the true value of the shrinkage or length measurement value and the measurement reproducibility error amount is calculated, and the correlation chart data indicates the interpolation curve represented by the calculated correlation function A charged particle beam system characterized by being output to the user interface in a superimposed manner on a chart. A charged particle beam system according to any one of claims 1 to 6,
In the measurement condition support process, the computing device
In accordance with the search instruction received from the operator via the user interface, for each combination of setting values indicated by the level of each factor to which the measurement parameter is assigned, the amount of deviation from the true value of the shrinkage or length measurement value and the measurement reproduction A charged particle beam system characterized by calculating an evaluation value for a sex error amount and outputting a combination having the highest evaluation value to the user interface. The charged particle beam system according to claim 7,
In the measurement condition support process, the computing device
Using the shrinkage amount s or the deviation amount s from the true value of the measurement value and the measurement reproducibility error amount 3σ, the equation r = √ (a × s ² + b × (3σ) ² ), a, b = const The charged particle beam system characterized in that the evaluation value r is calculated by: A charged particle beam system according to any one of claims 1 to 9,
The arithmetic unit is
An orthogonal table adopted for the experimental design table data, at least two measurement parameters of acceleration voltage, current amount, observation magnification, and number of frames, and assignment of the at least two measurement parameters to the factors of the orthogonal table; An experiment plan table that receives each level value taken by each factor to which the at least two measurement parameters are assigned from an operator via the user interface, generates the experiment plan table data, and stores it in the storage device A charged particle beam system characterized by further executing generation processing. A charged particle beam optical system for measuring a circuit pattern of the semiconductor device by irradiating a semiconductor device with a primary charged particle beam and detecting secondary charged particles generated thereby, and according to a set measurement parameter A charged particle beam system having a control system for controlling the charged particle beam optical system, and a computer-readable program for setting measurement parameters of the charged particle beam optical system in the control system,
In the computer,
From the storage device, the experimental design table data that is an orthogonal table in which at least two measurement parameters among the acceleration voltage, the current amount, the observation magnification, and the number of frames are assigned to any of the factors is read, and the read experimental design table For each experiment number described in the data, a setting value indicated by the level of each factor to which the measurement parameter is assigned is set in the control system, and the charged particle beam optical system has a plurality of the semiconductor device devices. Measuring the circuit pattern at the measurement point, calculating the amount of shrinkage from the true value of the shrinkage or length measurement value and the measurement reproducibility error amount from the measurement result, and storing the experimental data in the storage device;
For each experiment number described in the experiment plan table data, the set value indicated by the level of each factor to which the measurement parameter is assigned, the deviation amount from the true value of the shrinkage amount or length measurement value, and measurement reproducibility Correlation chart of the amount of deviation from the true value of the shrinkage or length measurement value and the measurement reproducibility error amount for all combinations of setting values indicated by the level of each factor to which the measurement parameter is assigned using the error amount A computer-readable program that executes measurement condition support processing that generates data and outputs the data to the user interface. A charged particle beam optical system for measuring a circuit pattern of the semiconductor device by irradiating a semiconductor device with a primary charged particle beam and detecting secondary charged particles generated thereby, and according to a set measurement parameter A charged particle beam system having a control system for controlling a charged particle beam optical system, a measurement parameter setting method for setting a measurement parameter of the charged particle beam optical system in the control system,
For each experiment number described in the experiment plan data consisting of an orthogonal table in which at least two measurement parameters of acceleration voltage, current amount, observation magnification, and number of frames are assigned to one of the factors, the measurement parameter is A set value indicated by the level of each assigned factor is set in the control system, and the charged particle beam optical system measures a circuit pattern at a plurality of measurement points of the semiconductor device, and the measurement result Calculate the amount of shrinkage or the deviation from the true value of the measurement value and the measurement reproducibility error amount from
For each experiment number described in the experiment plan table data, the set value indicated by the level of each factor to which the measurement parameter is assigned, the deviation amount from the true value of the shrinkage amount or length measurement value, and measurement reproducibility Correlation chart of the amount of deviation from the true value of the shrinkage or length measurement value and the measurement reproducibility error amount for all combinations of setting values indicated by the level of each factor to which the measurement parameter is assigned using the error amount A measurement parameter setting method characterized by generating and outputting data.

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