JP2007271608A - Magnetometric sensor device and magnetic encoder device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a magnetic encoder device capable of acquiring high detection accuracy even if a gap dimension between a magnetometric sensor device and a magnetic scale is changed. <P>SOLUTION: In the magnetic encoder device 100, the magnetometric sensor device 10 detects a rotary magnetic field on the surface of the magnetic scale 9 with a magnetic field intensity higher than a saturation sensitivity domain, and detects a moving position of the magnetic scale 9. In the magnetometric sensor device 10, +a phase magnetoresistive pattern 25 (+a), -a phase magnetoresistive pattern 25 (-a), +b phase magnetoresistive pattern 25 (+b), and -b phase magnetoresistive pattern 25 (-b) are arranged in a grid shape on the same surface of one rigid substrate 10. The +a phase magnetoresistive pattern 25 (+a) and the -a phase magnetoresistive pattern 25 (-a) are formed at diagonal positions, and the +b phase magnetoresistive pattern 25 (+b) and the -b phase magnetoresistive pattern 25 (-b) are formed at diagonal positions. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

The present invention relates to a magnetic sensor device and a magnetic encoder device using the magnetic sensor device.

For example, as shown in FIG. 15, the magnetic encoder device includes a magnetic sensor device 1001 having a magnetoresistive element on the sensor surface, and a magnetic scale 1009 having a permanent magnet that moves relative to the magnetic sensor device 1001. In this magnetic scale 1009, tracks in which N poles and S poles are alternately arranged along the relative movement direction with respect to the magnetic sensor device 1001 are formed. Further, on the side of the magnetic sensor device 1001, one of the two rigid substrates 1010a has a + a phase magnetoresistance pattern 1025 (+ a) of the A phase magnetoresistance pattern and a B phase magnetoresistance. The + b phase magnetoresistive pattern 1025 (+ b) of the pattern is formed, while the -a phase magnetoresistive pattern 1025 (-a) of the A phase magnetoresistive pattern and the B phase magnetoresistive are formed on the other rigid substrate 1010 b. A -b phase magnetoresistive pattern 1025 (-b) of the pattern is formed, and these two rigid substrates 1010a and 1010b are arranged to face each other. Here, the movement detection of the magnetic scale 1009 is performed with a phase difference of 90 ° between the A-phase magnetoresistive pattern and the B-phase magnetoresistive pattern. On the other hand, the + a phase magnetoresistive pattern 1025 (+ a) and the −a phase magnetoresistive pattern 1025 (−a) detect the movement of the magnetic scale 1009 with a phase difference of 180 °. The movement of the magnetic scale 1009 can be detected from the dynamic output. The + b phase magnetoresistive pattern 1025 (+ b) and the −b phase magnetoresistive pattern 1025 (−b) detect the movement of the magnetic scale 1009 with a phase difference of 180 °. The movement of the magnetic scale 1009 can be detected (see, for example, Patent Document 1).
JP 2005-249774 A

However, as shown in FIG. 15, when the magnetic sensor device 1001 is configured by arranging two rigid substrates 1010a and 1010b to face each other, the two rigid substrates 1010a and 1010b are arranged.
Due to the difference in sensitivity of the magnetoresistive patterns formed on each of these, there is a problem that when the gap size changes, the offset changes and the interpolation accuracy decreases.

Further, the magnetic encoder device generally has a type in which position detection is performed based on the strength of a magnetic field in a certain direction, and a saturation sensitivity region (generally, for example, a resistance value change amount k is approximately “k∝ there is a type that detects the direction of H refers to the region other than the region that can be represented by the formula ² ") or more field strength rotating magnetic field (rotating magnetic field vector), of these detection methods, the rotating magnetic field The principle of detecting the direction of the magnetic field is that when a magnetic field intensity that saturates the resistance value is applied in a state in which a magnetoresistive pattern made of a ferromagnetic metal is energized, the angle θ between the magnetic field and the current direction, Between the resistance value R, the following equation R = R ₀ −k × sin ² θ
R ₀ : resistance value in the absence of magnetic field k: resistance value change amount (a constant when the saturation sensitivity region is exceeded)
Use the relationship shown in. That is, since the resistance value R changes when the angle θ changes, the relative moving speed and moving direction between the magnetic scale 1009 and the magnetic sensor device 1001 can be detected. In the method of detecting the strength of the magnetic field, the waveform distortion increases when the gap between the magnetic scale 1009 and the magnetic sensor device 1001 is narrowed for the purpose of improving the S / N ratio. On the other hand, in a method of detecting a rotating magnetic field, that is, a method of detecting a rotation angle of a magnetic field vector with relative movement of the magnetic scale 1009 and the magnetic sensor device 1001, the magnetic scale 1009 and the magnetic sensor device 1001 are used. A sine wave component can be stably obtained even if the gap dimension is narrowed.

However, the method of detecting a rotating magnetic field requires a large magnetic field strength.
In the configuration in which two rigid substrates 1010a and 1010b are arranged to face each other, the rigid substrate 1010b is interposed between the magnetoresistive pattern and the magnetic scale 1009, so that the gap between the magnetoresistive pattern and the magnetic scale 1009 is There is a problem that the size cannot be reduced.

In view of the above problems, an object of the present invention is to provide a magnetic sensor device and a magnetic encoder device that can obtain high detection accuracy even if the gap size between the magnetic sensor device and the magnetic scale changes. It is in.

Another object of the present invention is to provide a magnetic sensor device and a magnetic encoder device suitable for detecting a rotating magnetic field.

In order to solve the above-described problem, in the present invention, in the magnetic sensor device having an A-phase magnetoresistive pattern and a B-phase magnetoresistive pattern having a phase difference of 90 °, the A-phase magnetoresistive pattern includes: A + a phase magnetoresistive pattern for detecting movement of the magnetic scale with a phase difference of 180 ° and a −a phase magnetoresistive pattern are provided, and the B phase magnetoresistive pattern has the phase difference of 180 °. A + b phase magnetoresistive pattern and a −b phase magnetoresistive pattern, the + a phase magnetoresistive pattern, the −a phase magnetoresistive pattern, the + b phase magnetoresistive pattern, and the − In the b-phase magnetoresistive pattern, the + a-phase magnetoresistive pattern and the -a-phase magnetoresistive pattern are diagonally located on the same surface of one substrate. A magnetic resistance pattern of the b-phase and the magnetic resistance pattern of the -b phase is characterized by being formed so as to be positioned diagonally.

In the present invention, the + a phase magnetoresistive pattern and the −a phase magnetoresistive pattern are located diagonally, and the + b phase magnetoresistive pattern and the −b phase magnetoresistive pattern are located diagonally. Since the four-phase magnetoresistive pattern can be drawn in the same plane, all of the magnetoresistive pattern constituting the A phase and the magnetoresistive pattern constituting the B phase are formed on one substrate. Can be formed on the same surface. For this reason, since all the magnetoresistive patterns have the same sensitivity, even when the gap dimension between the sensor surface and the magnetic scale varies, the offset does not vary and high interpolation accuracy can be obtained. Therefore, even when the sensor surface is tilted with respect to the magnetic scale during assembly, the influence on the interpolation accuracy can be suppressed. In addition, since the magnetoresistive pattern can be easily routed, a large number of high frequency canceling patterns can be arranged.

In the present invention, one of the + a phase magnetoresistance pattern and the -a phase magnetoresistance pattern, and one of the + b phase magnetoresistance pattern and the -b phase magnetoresistance pattern. The magnetoresistive pattern is connected to a first common terminal formed between the one magnetoresistive pattern forming region, and is selected from the + a phase magnetoresistive pattern and the −a phase magnetoresistive pattern. The other magnetoresistive pattern and the other magnetoresistive pattern of the + b phase magnetoresistive pattern and the −b phase magnetoresistive pattern are formed between the regions where the other magnetoresistive pattern is formed. Two common terminals are preferably connected. If comprised in this way, since a magnetoresistive pattern of a different phase can be adjoined on a board | substrate, detection accuracy can be improved.

The magnetic sensor device according to the present invention can be used to configure a magnetic encoder device together with a magnetic scale having tracks in which N poles and S poles are alternately arranged along the relative movement direction with respect to the magnetic sensor device. In this case, the magnetic encoder device according to the present invention can be configured as a type that detects a position based on the strength of a magnetic field in a certain direction, or a type that detects the direction of a rotating magnetic field with a magnetic field strength greater than or equal to a saturation sensitivity region. Further, it is possible to configure as a type in which the direction of the rotating magnetic field is detected by the magnetic field intensity in a region other than the saturation sensitivity region.

  According to the present invention, in the magnetic sensor device, a sensor surface constituted by each pattern surface facing the magnetic scale of the A-phase magnetoresistive pattern and the B-phase magnetoresistive pattern faces the track, It is effective when applied to a magnetic encoder device that detects a rotating magnetic field whose orientation in the in-plane direction changes on the magnetic scale. In this case, it is preferable that the sensor surface is formed in a size exceeding the edge portions at both ends in the width direction of the track facing each other in the width direction of the track. Furthermore, it is preferable that the magnetic sensor device can detect a rotating magnetic field in which the sensor surface faces the edge portion in the width direction of the track and the direction in the in-plane direction changes at the edge portion. The applicant of the present application investigated and studied the magnetic field on the surface of the magnetic scale. As a result, a rotating magnetic field whose direction in the in-plane direction changes was formed at the edge in the width direction of the track in which the N pole and the S pole were alternately arranged. New knowledge was obtained. The present invention has been made on the basis of such new knowledge, and if a rotating magnetic field whose direction in the in-plane direction changes is formed at the edge in the width direction of the track, the sensor of the magnetic sensor device The rotating magnetic field can be detected even when the surface is faced near the edge in the width direction of the track, and a magnetic encoder device can be configured. Also, if the sensor surface of the magnetic sensor device faces the magnetic scale, the magnetic field does not reach the saturation sensitivity region at a position away from the magnetic scale, unlike when the sensor surface is oriented perpendicular to the magnetic scale. Therefore, the detection accuracy can be improved. Furthermore, in the present invention, since the magnetoresistive pattern constituting the A phase and the magnetoresistive pattern constituting the B phase are all formed on the same surface of one substrate, the magnetoresistive pattern is formed on the substrate. If the surface to be processed is directed to the magnetic scale side, the gap dimension between the magnetoresistive pattern and the magnetic scale can be narrowed. Therefore, the magnetoresistive pattern can be arranged in a magnetic field capable of detecting the rotating magnetic field.

  In the present invention, the magnetic scale employs a configuration in which a plurality of the tracks are arranged in parallel in the width direction, and the positions of the N pole and the S pole are shifted in the relative movement direction between the adjacent tracks in the plurality of tracks. can do. For example, the plurality of tracks may employ a configuration in which the positions of the N pole and the S pole are shifted by one magnetic pole in the relative movement direction between adjacent tracks. If the positions of the N pole and the S pole are shifted in the relative movement direction between adjacent tracks, a strong rotating magnetic field is generated at the track boundary portion of the edge portion in the track width direction. Therefore, if the sensor surface of the magnetic sensor faces the boundary portion of the track, the sensitivity of the magnetic encoder device can be improved.

  In the present invention, in the magnetic scale, the tracks are arranged in parallel in three or more rows in the width direction, the sensor surface is opposed to three or more rows in the width direction, and both end portions of the sensor surface are opposed. It is preferable that the positions of the N pole and the S pole in the relative movement direction coincide between the tracks. This configuration has the advantage that the detection sensitivity does not change even if the relative position in the width direction between the magnetic sensor device and the magnetic scale is shifted.

  In the present invention, in the plurality of tracks, it is preferable that the N pole and the S pole are in direct contact between adjacent tracks. That is, since there is no non-magnetized part or non-magnetic part where no magnetic pole exists between adjacent N and S poles, rotation with higher strength is performed at the boundary between adjacent tracks. A magnetic field can be generated.

The magnetic encoder device according to the present invention can constitute either a linear encoder or a rotary encoder.

In the present invention, the + a phase magnetoresistive pattern and the −a phase magnetoresistive pattern are located diagonally, and the + b phase magnetoresistive pattern and the −b phase magnetoresistive pattern are located diagonally. Since the four-phase magnetoresistive pattern can be drawn in the same plane, all of the magnetoresistive pattern constituting the A phase and the magnetoresistive pattern constituting the B phase are formed on one substrate. Can be formed on the same surface. For this reason, since all the magnetoresistive patterns have the same sensitivity, even when the gap dimension between the sensor surface and the magnetic scale varies, the offset does not vary and high interpolation accuracy can be obtained. Therefore, even when the sensor surface is tilted with respect to the magnetic scale during assembly, the influence on the interpolation accuracy can be suppressed. In addition, since the magnetoresistive pattern can be easily routed, a large number of high frequency canceling patterns can be arranged.

  The best mode for carrying out the present invention will be described with reference to the drawings.

(overall structure)
FIG. 1 is an explanatory diagram of a magnetic encoder device to which the present invention is applied. 2 (a) and 2 (b)
(C) is the schematic sectional drawing which shows the structure of the principal part of the magnetic sensor apparatus to which this invention is applied, its schematic perspective view, and a schematic plan view.

As shown in FIG. 1, the magnetic sensor device 1 in this embodiment is used in a magnetic linear encoder device 100 (magnetic encoder device), and a movable member (not shown) is attached to the bottom surface of the magnetic sensor device 1. Are opposed to each other. As will be described later, the magnetic scale 9 is formed with tracks in which N poles and S poles are alternately arranged along the longitudinal direction (the relative movement direction of the magnetic sensor device 1 and the magnetic scale 9). The magnetic sensor device 1 detects the moving position when the movable member and the magnetic scale 9 move in the longitudinal direction of the magnetic scale 9 by detecting the direction of the rotating magnetic field formed on the surface of the magnetic scale 9. The magnetic sensor device 1 includes a holder 6 made of a substantially rectangular parallelepiped aluminum die-cast product, a rectangular cover 68 that covers the opening of the holder 6, and a cable 7 that extends from the holder 6.
The holder 6 is formed with a cable insertion hole 69 on its side surface.
The cable 7 is pulled out from the cable.

As shown in FIGS. 2A, 2B, and 2C, the holder 6 has a reference surface 60 made of a flat surface protruding from the bottom surface of the holder 6 through a step on the bottom surface facing the magnetic scale 9. Is formed. An opening 65 is formed in the reference surface 60, and the magnetoresistive element 25 formed on the rigid substrate 10 such as a silicon substrate or a ceramic grace substrate is disposed with respect to the opening 65. It is configured.

  Here, the magnetoresistive element 25 is an A-phase magnetoresistive pattern 25 (A) having a phase difference of 90 ° as a magnetoresistive pattern for detecting a rotating magnetic field whose direction changes in the in-plane direction of the magnetic scale 9. B-phase magnetoresistive pattern 25 (B), and A-phase magnetoresistive pattern 25 (A) and lower end face of B-phase magnetoresistive pattern 25 (B) (each pattern facing the magnetic scale 9) Sensor surface 250 is constituted by the surface. In the drawing, SIN is attached to the A-phase magnetoresistive pattern, and COS is attached to the B-phase magnetoresistive pattern.

The A-phase magnetoresistive pattern 25 (A) includes a + a-phase magnetoresistive pattern 25 (+ a) for detecting movement of the magnetic scale 9 with a phase difference of 180 °, and a -a-phase magnetoresistive pattern 25 (-a). In the drawing, the + a phase magnetoresistive pattern 25 (+ a) has S
Indicated as IN +, the -a phase magnetoresistive pattern 25 (-a) is marked with SIN-. Similarly, the B-phase magnetoresistive pattern 25 (B) has a magnetic scale 9 with a phase difference of 180 °.
+ B phase magnetoresistive pattern 25 (+ b) and -b phase magnetoresistive pattern 2 for detecting movement of
5 (−b), and in the drawing, the + b phase magnetoresistive pattern 25 (+ b) has CO 2
S + is attached, and COS- is attached to the -b phase magnetoresistive pattern 25 (-b).

In this embodiment, a + a phase magnetoresistive pattern 25 (+ a), a −a phase magnetoresistive pattern 25.
(-A), + b phase magnetoresistive pattern 25 (+ b), and -b phase magnetoresistive pattern 2
5 (-b) is formed on the same surface (main surface) of one rigid substrate 10. The magnetoresistive patterns 25 (+ a), 25 (−a), 25 (+ b), and 25 (−b) are arranged in a lattice pattern on the rigid substrate 10, and the + a phase magnetoresistive pattern 25 (+ a). And the -a phase magnetoresistive pattern 25 (-a) are formed at diagonal positions, and the + b phase magnetoresistive pattern 25 (+
b) and the -b phase magnetoresistive pattern 25 (-b) are formed at diagonal positions.

In the magnetic scale 9, tracks 91 in which N poles and S poles are alternately arranged along the moving direction are formed. In this embodiment, three rows of tracks 91 (91A, 91B, 91C) are arranged in parallel in the width direction. is doing. Here, between the adjacent tracks 91A, 91B, 91C, the positions of the N pole and the S pole are shifted by one magnetic pole in the moving direction. For this reason, the tracks 91A, 91 on both sides
Between 91C, the positions of the N pole and the S pole coincide with each other in the movement direction. Further, the boundary portion 912 between the adjacent track 91A and the track 91B and the boundary portion 912 between the track 91B and the track 91C are, for example, the adjacent boundary without interposing a non-magnetized portion or a non-magnetic portion where no magnetic pole exists. It is preferable that the N pole and S pole of the portion 912 are formed so as to be in direct contact with each other. However, if a rotating magnetic field having a large intensity that can be detected by the magnetic sensor device 1 can be generated, the adjacent track 91A and the track The boundary portion 912 of 91B and the boundary portion 912 between the track 91B and the track 91C may include a non-magnetized portion or a non-magnetic portion where no magnetic pole exists.

In the magnetic encoder device 1 configured as described above, when the magnetic field analysis of the magnetic field of the magnetic scale 9 in the in-plane direction is performed for each minute region in a matrix form, FIGS. 3 (a), 3 (b), 3 (c).
), As indicated by arrows in the edge portions 911 in the width direction of the tracks 91A, 91B, 91C,
A rotating magnetic field whose direction in the in-plane direction changes is formed as in the region surrounded by the circle L. In particular, in the boundary portion 912 of the tracks 91A, 91B, and 91C, the strength is increased as in the region surrounded by the circle L2. A large rotating magnetic field is generated. Further, in this embodiment, the boundary portion 912 between the adjacent track 91A and the track 91B and the boundary portion 912 between the track 91B and the track 91C are formed so that the N pole and the S pole of the boundary portion 912 are in direct contact with each other. Therefore, a rotating magnetic field having a higher strength is generated at the boundary portion 912 of the tracks 91A, 91B, and 91C.

  Therefore, in this embodiment, as shown in FIG. 2C, the sensor surface 250 of the magnetic sensor device 1 is opposed to the boundary portion 912 of the tracks 91A, 91B, 91C. In addition, since the sensor surface 250 is located at the center in the width direction of the magnetic scale 9, one end 251 in the width direction of the sensor surface 250 is the track 91A among the three tracks 91A, 91B, and 91C. The other end 252 is located at the center in the width direction of the track 91C. Therefore, the region where the + a phase magnetoresistive pattern 25 (+ a) is formed and the region where the + b phase magnetoresistive pattern 25 (+ b) is formed are opposed to the boundary portion 912 of the tracks 91A and 91B. The region where the -a phase magnetoresistive pattern 25 (-a) is formed and the region where the -b phase magnetoresistive pattern 25 (-b) is formed are opposite to the boundary portion 912 of the tracks 91B and 91C. is doing. The track 91B includes a region where the + a-phase magnetoresistive pattern 25 (+ a) and the + b-phase magnetoresistive pattern 25 (+ b) are formed, and a -a-phase magnetoresistive pattern 25 (-a) and a -b-phase Each of the regions in which the magnetoresistive pattern 25 (-b) is formed is formed in the center of the magnetic scale 9 as an opposing track, that is, a common track 91B that is also used as a common track 91B.

(Configuration of magnetoresistive pattern)
In the magnetic sensor device 1 of this embodiment, the magnetoresistive pattern 25 is formed on the main surface of the rigid substrate 10.
(+ A), 25 (-a), 25 (+ b), 25 (-b) are formed as shown in FIG. 4, and these magnetoresistive patterns 25 (+ a), 25 (-a), 25 ( + B), 25 (-b
) Constitutes the bridge circuit shown in FIGS. 5 (a) and 5 (b).

As shown in FIG. 4, the magnetoresistive patterns 25 (+ a), 25 (−a), 25 (+ b), 2
5 (-b) is formed in the central region in the longitudinal direction of the rigid substrate 10, the one end portion 11 of the rigid substrate 10 is the first terminal portion 21, and the other end portion 12 is the second terminal portion. 22

Here, the + a phase magnetoresistive pattern 25 (+ a) and the −a phase magnetoresistive pattern 25 (−
a) is formed at a diagonal position, and the + b phase magnetoresistive pattern 25 (+ b) and the −b phase magnetoresistive pattern 25 (−b) are formed at a diagonal position.

As shown in FIGS. 4 and 5A, the + a phase magnetoresistive pattern 25 (+ a) and the −a phase magnetoresistive pattern 25 (−a) have one end at the power supply terminal 212 (Vcc), 2
22 (Vcc), and the other end is connected to ground terminals 213 (GND) and 223 (GND) as a first common terminal and a second common terminal. The terminal 211 (+ a) for the output SIN + is connected to the midpoint position of the + a phase magnetoresistive pattern 25 (+ a), and the midpoint position of the −a phase magnetoresistive pattern 25 (−a) is A terminal 221 (-a) for the output SIN- is connected. Therefore, if the output SIN + and the output SIN− are input to the subtractor, a differential output can be obtained, and the moving speed of the magnetic scale 9 can be detected from the differential output.

Similarly, as shown in FIG. 4 and FIG. 5B, the + b phase magnetoresistive pattern 25 (+ b)
The -b phase magnetoresistive pattern 25 (-b) has one end at the power supply terminal 224 (Vcc),
214 (Vcc). The other end of the -b phase magnetoresistive pattern 25 (-b) is connected to the ground terminal 213 (GND) as the first common terminal, similarly to the + a phase magnetoresistive pattern 25 (+ a), and + b The other end of the phase magnetoresistive pattern 25 (+ b) is
Similar to the -a phase magnetoresistive pattern 25 (-a), the ground terminal 2 as the second common terminal
23 (GND). Further, the terminal 225 (+ b) for the output COS + is connected to the midpoint position of the + b phase magnetoresistive pattern 25 (+ b), and the midpoint position of the −b phase magnetoresistive pattern 25 (−b) is A terminal 215 (-b) for the output COS- is connected. Therefore, if the output SIN + and the output SIN− are input to the subtracter, a differential output can be obtained, and the moving speed of the magnetic scale 9 can be detected from the differential output.

  In addition to the above terminals, dummy terminals are formed in the first terminal portion 21. In addition to the above terminals, dummy terminals are also formed in the second terminal portion 22. A Z-phase magnetoresistive pattern 25 (Z) for detecting the origin position is formed in a central region in the longitudinal direction of the rigid substrate 10 in an area adjacent to the magnetoresistive pattern, and the second terminal In the portion 22, a power supply terminal 226 (Vcc), a ground terminal 227 (GND), output terminals 228 (Z), and 229 (Z) for the Z-phase magnetoresistive pattern 25 (Z) are also formed.

  Here, the magnetoresistive patterns 25 (+ a), 25 (−a), 25 (+ b), and 25 (−b) are magnetic substances such as a ferromagnetic NiFe formed on the main surface of the rigid substrate 10 by a semiconductor process. It consists of a membrane and constitutes a Wheatstone bridge. Each terminal is made of a conductive film formed simultaneously with the magnetoresistive patterns 25 (+ a), 25 (−a), 25 (+ b), and 25 (−b).

Magnetoresistive patterns 25 (+ a), 25 (−a), 25 (+ b), 2 configured in this way
5 (-b) has a narrow portion at a predetermined position in the moving direction, as shown in FIG. 4, for example, as shown in FIG. 5 (c) taking the magnetoresistive pattern 25 (-a) as an example. Four resistors Ra to Rd
Can be considered as The resistance values of these four resistors Ra to Rd change corresponding to the phase change shown in FIG. Therefore, the resistors Ra and Rb have the same phase and the detected magnetic poles are opposite. The resistors Rc and Rd have the same phase and the detected magnetic poles are opposite. Further, the resistance values of the resistors Ra and Rb and the resistors Rc and Rd change with a phase difference of 180 °, and a differential output can be obtained.

(Structure around rigid substrate on holder)
In the present embodiment, the structure shown in FIGS. 6 and 7 is employed when the magnetic sensor device 1 is configured by arranging the rigid substrate 10 in the holder 6.

FIGS. 6A, 6B, and 6C are a bottom view, a longitudinal sectional view of a main part, and a sectional view showing an enlarged periphery of the magnetoresistive element shown in FIG. 7 (a), (b), (c)
Are respectively a plan view showing a state where a flexible substrate is connected to a rigid substrate, a longitudinal sectional view thereof, and a section showing a state where a resin protective layer is formed on the rigid substrate in the magnetic sensor device to which the present invention is applied. FIG.

6 (a), 6 (b), 7 (c) and 7 (a), 7 (b), in the magnetic sensor device 1 of the present embodiment, the rigid substrate 10 has a first end 11 at the first end 11 thereof. One end of a conductive pattern 37 (signal line) formed on the base film 36 in the first flexible substrate 31 is connected to each terminal by the first terminal portion 21. They are connected by a method such as solder bonding, alloy bonding, or bonding using an anisotropic conductive film. Further, in the rigid substrate 10, a second flexible substrate 32 is connected to the other side end 12, and a conductive pattern 37 (signal) formed on the base film 36 in the second flexible substrate 32. The ends of the lines are connected to the terminals of the second terminal portion 22 by a method such as solder bonding, alloy bonding, or bonding using an anisotropic conductive film. Here, among the conductive patterns 37 formed on the base film 36 in the first flexible substrate 31 and the second flexible substrate 32, each of the first terminal portion 21 and the second terminal portion 22. The portion to be joined to the terminal is plated with Sn—Cu.

In this embodiment, the first flexible substrate 31 and the second flexible substrate 32 are constituted by a part of one flexible substrate 30 as shown in FIG. That is, the flexible substrate 30
Includes a rectangular portion 33 to be connected to the cable 7 shown in FIG. 1 and a pair of U-shaped extending portions 34 and 35 extending from the lower end edge of the rectangular portion 33 to the left and right sides. The first flexible substrate 31 is constituted by one extending portion 34 of the pair of extending portions 34 and 35,
The second extending portion 35 constitutes the second flexible substrate 32. Therefore, the thickness of the base film 36 and the thickness of the conductive pattern 37 are the same between the first flexible substrate 31 and the second flexible substrate 32. In addition, the flexible substrate 30 is symmetrical, and the first flexible substrate 31 and the second flexible substrate 32 have the same planar shape.

In the flexible substrate 30, a plurality of small semicircular cutouts 39 are formed at both end edges located in the width direction of the pair of extending portions 34 and 35, and the cutouts 39 are formed. The flexible substrate 30 and the rigid substrate 10 are folded as a valley fold portion (indicated by a one-dot chain line) and a mountain fold portion (indicated by a two-dot chain line), as shown in FIGS. As shown in FIGS. 7B and 7C, the rigid substrate 10 is disposed on the bottom surface of the holder 6 with the main surface of the rigid substrate 10 facing outward (downward).

In the magnetic sensor device 1 configured as described above, the magnetoresistive element 25 includes, for example, an insulating resin layer 40, a conductive adhesive layer 81, a nonmagnetic metal layer 82, as shown in FIG.
Further, the metal layer 82 is covered with the resin protective layer 83 and bonded and fixed to the holder 6 through the conductive adhesive layer 81. Accordingly, the metal layer 82 is electrically connected to the holder 6 via the conductive adhesive layer 81, and the metal layer 82 functions as a radio wave shielding conductive layer that covers the surface of the magnetoresistive element 25. Here, the resin protective layer 83, the metal layer 82, and the conductive adhesive material layer 81 are laminated on both surfaces of the metal layer 82 made of aluminum foil, copper foil, or the like. The film 80 is bonded and fixed to the holder 6 through the conductive adhesive layer 81. Further, the resin protective layer 83, the metal layer 82, and the conductive adhesive layer 81 are formed on the surface of the resin protective layer 83 made of a film substrate such as PET, the metal layer 82 made of an aluminum film or a copper film, and the conductive layer. 80 with laminated adhesive layer 81
Is bonded and fixed to the holder 6 via the conductive adhesive layer 81. Conductive adhesive layer 8
No. 1 is obtained by dispersing carbon particles, aluminum particles, silver particles, copper particles and the like in various adhesive materials. The thickness of the film 80 is about 50 μm and is extremely thin. Therefore, the gap between the magnetoresistive element 25 and the magnetic scale 9 can be reduced to 300 μm or less. The resin protective layer 83 is better from the viewpoint of protecting the metal layer 82 when it comes into contact with a movable member or the like. However, depending on the type of metal constituting the metal layer 82 and the usage pattern, the resin protective layer 83 may be used. The layer 83 may be omitted.

  The magnetoresistive element 25 has a magnetoresistive curve (MR characteristic) as shown in FIG. 14, and the magnetoresistive change rate changes according to the applied magnetic flux density. The magnetoresistance change rate (MR ratio) R0 of the magnetoresistive element 25 in this embodiment is −2.5%. Therefore, when the magnetoresistance change rate R of the magnetoresistive element 25 is changed from −0.5% (= R0 × 0.2) to −2.5% by the rotating magnetic field generated by the magnetic scale 9 (permanent magnet). This is used as an output signal. That is, in the magnetic sensor device 1, the magnetoresistive element 25 is a region (region indicated by an arrow X in FIG. 14) that exhibits a resistance change of 20% or more with respect to the maximum resistance change rate from the resistance value in a non-magnetic field. Detect and output magnetic field. Therefore, in this embodiment, even if the rotating magnetic field detection method is adopted, the resistance change is not limited to the saturation sensitivity region, but the resistance change with respect to the maximum resistance change rate from the resistance value in the absence of a magnetic field in the magnetoresistance curve of the magnetoresistive element. A magnetic field in a saturation sensitivity region and a quasi-saturation sensitivity region corresponding to a base portion having a rate of 20% or more is used. In this embodiment, the “quasi-saturation sensitivity region” means that the resistance change rate is 20% or more with respect to the maximum resistance change rate from the resistance value in a magnetic field in the magnetoresistance curve of the magnetoresistive element, and The magnetic field region up to the saturation sensitivity region is shown.

A method of manufacturing the magnetic sensor device 1 having such a configuration will be described with reference to FIGS. 6 (a), (b), (c) and FIGS. 7 (a), (b), (c). The configuration of the magnetic sensor device 1 will be further described in detail.

In this embodiment, first, the magnetoresistive element 2 is applied to the main surface of the rigid substrate 10 by a semiconductor process.
5, after forming the first terminal portion 21 and the second terminal portion 22, the first flexible substrate 31 is connected to the one end portion 11 of the rigid substrate 10, and the other end of the rigid substrate 10 is connected. The second flexible substrate 32 is connected to the part 12.

Next, between the main surface of the rigid substrate 10 and the first flexible substrate 31 and between the main surface of the rigid substrate 10 and the second flexible substrate 32, the flexible substrate 30. The gap 3 is caused by a portion where the conductive pattern is not formed and a portion where the terminal is not formed in the rigid substrate 10.
Since 8a and 38b are generated, the gaps 38a and 38b are filled with a sealing resin 41 such as an epoxy resin. When an anisotropic conductive film is used for joining the first flexible substrate 31 and the second flexible substrate 32 to the rigid substrate 10, the resin portion can fill the gap. Therefore, it is not necessary to separately fill the gap with resin.

Next, after bending the flexible substrate 30 along a valley fold portion indicated by a one-dot chain line and a mountain fold portion indicated by a two-dot chain line in FIG. 7A, a rigid substrate is obtained as shown in FIG. 7B. 10 main faces outside (
The flexible substrate 30 and the rigid substrate 10 are arranged at the bottom in the holder 6. At that time, in the first flexible substrate 31 and the second flexible substrate 32, the back surface side 361 of the base film 36 in the portion connected to the rigid substrate 10 is made to coincide with the reference surface 60 of the holder 6. In addition, the rigid substrate 10, the first flexible substrate 31, and the second flexible substrate 32 are placed in the holder 6.
To fix.

Next, as shown in FIG. 7C, the first flexible substrate 31 is formed on the main surface of the rigid substrate 10.
And the second flexible substrate 32 are filled with a resin such as an epoxy resin and then cured to cover the magnetoresistive element 25 as indicated by a dotted line rising to the right in FIG. An insulating resin layer 40 is formed. At that time, in the opening 65 of the holder 6, the gaps between the first flexible substrate 31 and the second flexible substrate 32 and the opening 65 may be filled with resin. Through the above steps, the fixing of the rigid substrate 10 to the holder 6 is completed in the magnetic sensor device 1.

Next, as shown in FIG. 6C, a film 80 in which a resin protective layer 83, a metal layer 82, and a conductive adhesive material layer 81 are formed in this order is used, and the conductive adhesive material layer 81 is used as a reference surface 60. Aim for it.

Thus, in this embodiment, the surface of the magnetoresistive element 25 is covered with the insulating resin layer 40, the conductive adhesive material layer 81, the metal layer 82, and the resin protective layer 83, and the metal layer 82 is made of the conductive adhesive material. It is bonded and fixed to the holder 6 through the layer 81. Therefore, the metal layer 82 is electrically connected to the holder 6 through the conductive adhesive layer 81. Through the above steps, in the magnetic sensor device 1,
The surface of the magnetoresistive element 25 can be covered with a radio wave shielding conductive layer made of the metal layer 82.

(Main effects of this form)
As described above, in the magnetic sensor device 1 of the present embodiment, the + a phase magnetoresistive pattern 25 (+ a) and the −a phase magnetoresistive pattern 25 (−a) are located diagonally, and the + b phase magnetism Since the resistance pattern 25 (+ b) and the -b phase magnetoresistance pattern (-b) are diagonally located, the four-phase magnetoresistance patterns 225 (+ a), 225 (-a), and 225 (+ b) 225 (−b) can be routed in the same plane, and magnetoresistive patterns 25 (+ a) and 25 (−a) constituting the A phase and magnetoresistive patterns 25 (+ b) and 25 constituting the B phase All of (−b) can be formed on the same surface of one rigid substrate 10. For this reason, any of the magnetoresistive patterns 25 (+ a), 25 (−a), 25 (+ b), and 25 (−b) can be configured with the same sensitivity, so that the gap dimension between the sensor surface 250 and the magnetic scale 9 is small. Even if it fluctuates, the offset does not fluctuate and high interpolation accuracy can be obtained. Therefore, the sensor surface 250 formed by the lower end surfaces (each pattern surface facing the magnetic scale 9) of the A-phase magnetoresistive pattern 25 (A) and the B-phase magnetoresistive pattern 25 (B) is attached to the magnetic scale 9 during assembly. Even when tilted, the influence on the interpolation accuracy can be suppressed. In addition, since the magnetoresistive patterns 225 (+ a), 225 (−a), 225 (+ b), and 225 (−b) can be easily routed, a large number of high frequency canceling patterns can be arranged.

  Further, the magnetoresistive element 25 of the present embodiment has a + a phase magnetoresistive pattern 25 (+ a) and a −a phase magnetoresistive pattern 25 (−a) diagonally positioned, and a + b phase magnetoresistive pattern 25 ( + B) and the -b phase magnetoresistive pattern (-b) are positioned diagonally, and the magnetoresistive patterns 25 (+ a) and 25 (-a) constituting the A phase and the magnetoresistive constituting the B phase Since all of the patterns 25 (+ b) and 25 (−b) can be formed on the same surface of one rigid substrate 10, for example, a + a phase magnetoresistive pattern, −a phase The two magnetoresistive elements formed by arranging the magnetoresistive patterns of the magnetic resistance pattern, + b phase magnetoresistive pattern, and -b phase magnetoresistive pattern in the same direction and in a straight line are used. With the magnetoresistive elements in parallel Compared to the magnetic sensor device used, the same high detection accuracy can be obtained, and the space for mounting the magnetoresistive element 25 in the magnetic sensor device 1 can be saved. 1 can also be miniaturized.

The other end of the -b phase magnetoresistive pattern 25 (-b) is connected to the ground terminal 213 (GND) as the first common terminal, similarly to the + a phase magnetoresistive pattern 25 (+ a),
The other end of the + b phase magnetoresistive pattern 25 (+ b) is connected to the −a phase magnetoresistive pattern 25 (−
Similar to a), since it is connected to the ground terminal 223 (GND) as the second common terminal, the magnetoresistive patterns of different phases can be brought close to each other on the rigid substrate 10, so that the detection accuracy can be improved. .

In this embodiment, all of the magnetoresistive patterns 25 (+ a) and 25 (−a) constituting the A phase and the magnetoresistive patterns 25 (+ b) and 25 (−b) constituting the B phase are combined into one sheet. Since the rigid substrate 10 is formed on the same surface, the magnetoresistive pattern 225 (+
a) If the surface on which 225 (−a), 225 (+ b), and 225 (−b) are formed is directed toward the magnetic scale 9, the magnetoresistive pattern 225 (+ a) and 225 (−a) 225
The gap dimension between (+ b), 225 (−b) and the magnetic scale 9 can be narrowed. Therefore, in the magnetic linear encoder device 100, the adjacent tracks 91A, 91 of the magnetic scale 9 are used.
The rotating magnetic field formed in the boundary portion 912 between B and 91C can be detected by the magnetic sensor device 1, and the relative moving speed and the relative moving distance with the magnetic scale 9 can be detected based on the result. At this time, the magnetic sensor device 1 can obtain a sine wave with high waveform quality and can exhibit the features of the rotating magnetic field detection type to the maximum, such as being strong against a disturbance magnetic field. In addition, since the saturation sensitivity region is used, high detection sensitivity can be obtained without being affected by manufacturing variations of the magnetoresistive element 25.

  In the magnetic scale 9 of this embodiment, the boundary portion 912 between the adjacent track 91A and the track 91B and the boundary portion 912 between the track 91B and the track 91C include, for example, a non-magnetized portion or a non-magnetic portion where no magnetic pole exists. Without making it, the N pole and the S pole of the adjacent boundary portion 912 are in direct contact with each other. Further, the boundary portion 912 between the adjacent track 91A and the track 91B and the boundary portion 912 between the track 91B and the track 91C are formed so that the N pole and the S pole of the boundary portion 912 are in direct contact with each other. , 91B, 91C can generate a stronger rotating magnetic field at the boundary portion 912.

  Further, the track 91B includes a region where the + a phase magnetoresistive pattern 25 (+ a) and the + b phase magnetoresistive pattern 25 (+ b) are formed, and a −a phase magnetoresistive pattern 25 (−a) and Since each region of the region where the -b phase magnetoresistive pattern 25 (-b) is formed is formed in the center of the magnetic scale 9 as an opposite track, that is, a common track 91B, the magnetic scale 9 9 can be reduced in size. In addition, since the number of magnetizations of the N pole and the S pole on the track can be reduced, the magnetic scale 9 can be manufactured inexpensively and easily.

Further, in this embodiment, the sensor surface 250 of the magnetic sensor device 1 is used for the tracks 91A, 91B, 9
Since the rotating magnetic field is detected so as to face the boundary portion 912 of 1C, the magnetic field is saturated at a position away from the magnetic scale 9, unlike the case where the sensor surface 250 is oriented perpendicularly to the magnetic scale 9. It is possible to avoid not reaching the area. Therefore, the detection accuracy of the magnetic encoder device 1 can be improved.

In the present embodiment, the end portions 251 and 252 in the width direction of the sensor surface 250 are each positioned at the center in the width direction of the tracks 91A and 91C. However, the width dimension of the sensor surface 250 is a magnetic scale. 9 may be employed in which the end portions 251 and 252 of the sensor surface 250 protrude beyond the width direction of the magnetic scale 9.

[Modification]
In the above embodiment, the number of tracks is three. However, as shown in FIG. 8, the in-plane direction of the magnetic field of the magnetic scale 9 even when there are two rows of tracks 91 (91A, 91B). When the magnetic field analysis is performed for each of the matrix-like micro regions, as shown by arrows in FIGS. 9A, 9B, and 9C, in the edge portion 911 in the width direction of the tracks 91A, 91B, the circle L A rotating magnetic field whose direction in the in-plane direction changes is formed as in the region surrounded by circles, and in particular, a strong rotating magnetic field is generated at the boundary portion 912 of the tracks 91A and 91B as in the region surrounded by the circle L2. It has occurred. Further, in this embodiment, the boundary portion 912 between the adjacent track 91A and the track 91B is formed so that the N pole and S pole of the boundary portion 912 are in direct contact with each other, so that the boundary portion 912 between the tracks 91A and 91B is A rotating magnetic field with higher strength is generated. Therefore, the present invention may be applied to a magnetic encoder device using the magnetic scale 9 having two tracks. In addition, the boundary portion 912 between the adjacent track 91A and the track 91B has, for example, the N pole and S pole of the adjacent boundary portion 912 directly without interposing a non-magnetized portion or a nonmagnetic portion where no magnetic pole exists. It is formed to touch.

Further, as shown in FIG. 10, even when the number of tracks is one, the magnetic field analysis of the in-plane direction of the magnetic field of the magnetic scale 9 is performed for each of the matrix-like minute regions. b
) And (c), as indicated by arrows, at the edge portion 911 in the width direction of the track 91, a rotating magnetic field whose direction in the in-plane direction changes is formed, as in a region surrounded by a circle L. Therefore, the present invention may be applied to a magnetic encoder device using the magnetic scale 9 having one row of tracks.

  Further, as shown in FIG. 12, the sensor surface 250 faces the five rows of tracks 91A, 91B, 91C, 91D, and 91E, and both ends of the sensor surface 250 face each other between the tracks 91A and 91E in the moving direction. A configuration in which the positions of the N pole and the S pole coincide may be employed. Further, the boundary portion between the adjacent tracks 91A and 91B, the boundary portion between the tracks 91B and 91C, the boundary portion between the tracks 91C and 91D, and the boundary portions between the tracks 91D and 91E are defined as the N pole and S of the boundary portion. By forming the poles so as to be in direct contact with each other, it is possible to generate a rotating magnetic field having a higher strength at each boundary portion of the tracks 91A, 91B, 91C, 91D, and 91E. Further, at each boundary portion of the tracks 91A, 91B, 91C, 91D, 91E, for example, the N pole and the S pole of the adjacent boundary portion are not interposed without interposing a non-magnetized portion and a nonmagnetic portion where no magnetic pole exists. It is preferably formed so as to be in direct contact. With such a configuration, it is possible to generate a rotating magnetic field with higher strength.

[Configuration of other magnetic encoder devices]
In any of the above embodiments, the magnetic encoder device is configured as a linear encoder. However, as shown in FIGS. 13A and 13B, a rotary encoder may be configured. In this case, as shown in FIG. 13A, the magnetic scale 9 is configured such that the track 91 extends in the circumferential direction on the end face of the rotating body, and the magnetic sensor device 1 with respect to the track 91 configured in this way. These sensor surfaces 250 may be opposed to each other. Further, as shown in FIG. 13B, the magnetic scale 9 is configured so that the track 91 extends in the circumferential direction on the outer peripheral surface of the rotating body,
The sensor surface 250 of the magnetic sensor device 1 may be opposed to the track 91 configured as described above.

  In the above embodiment, the magnetic sensor device 1 according to the present invention is used in a magnetic encoder device that detects the direction of a rotating magnetic field with a magnetic field strength equal to or higher than the saturation sensitivity region. However, the position is detected by the strength of a magnetic field in a certain direction. You may use for a magnetic encoder apparatus of a type. Further, it can be configured as a type in which the direction of the rotating magnetic field is detected by the magnetic field intensity in a region other than the saturation sensitivity region.

It is explanatory drawing of the magnetic encoder apparatus to which this invention is applied. (A), (b), (c) is the schematic sectional drawing which shows the structure of the principal part of the magnetic sensor apparatus to which this invention is applied, its schematic perspective view, and a schematic plan view. (A), (b), (c) is explanatory drawing when the direction of the magnetic field currently formed in the magnetic scale of the magnetic encoder apparatus to which this invention is applied is seen planarly, and explanatory drawing when it sees diagonally It is explanatory drawing when it sees from the side. It is explanatory drawing of the magnetoresistive pattern formed in the magnetic sensor apparatus of the magnetic encoder apparatus to which this invention is applied. It is explanatory drawing which shows the electrical structure of the magnetoresistive pattern shown in FIG. (A), (b), (c) is the bottom view of the magnetic sensor apparatus shown in FIG. 1, the longitudinal cross-sectional view of the principal part, and sectional drawing which expands and shows the periphery of a magnetoresistive element. (A), (b), (c) is a plan view showing a state where a flexible substrate is connected to a rigid substrate, a longitudinal sectional view thereof, and a rigid substrate, respectively, in the magnetic sensor device to which the present invention is applied. It is sectional drawing which shows the state in which the resin protective layer was formed in. It is explanatory drawing of another magnetic encoder apparatus to which this invention is applied. (A), (b), (c) is explanatory drawing when the direction of the magnetic field currently formed in the magnetic scale of the magnetic encoder apparatus shown in FIG. 8 is seen planarly, explanatory drawing when it sees diagonally, It is explanatory drawing when it sees from the side. It is explanatory drawing of another magnetic encoder apparatus to which this invention is applied. (A), (b), (c) is explanatory drawing when the direction of the magnetic field formed in the magnetic scale of the magnetic encoder device shown in FIG. It is explanatory drawing when it sees from the side. It is explanatory drawing of another magnetic encoder apparatus to which this invention is applied. (A), (b) is explanatory drawing when a rotary encoder is comprised with the magnetic encoder apparatus to which this invention is applied. It is a graph which shows the MR curve of the magnetoresistive element which the magnetic encoder apparatus to which this invention is applied has. It is explanatory drawing of the conventional magnetic encoder apparatus.

Explanation of symbols

1 Magnetic sensor device 9 Magnetic scale)
10 Rigid Substrate 25 Magnetoresistive Element 25 (+ a) + a Phase Magnetoresistive Pattern 25 (−a) −a Phase Magnetoresistive Pattern 25 (+ b) + b Phase Magnetoresistive Pattern 25 (−b) −b Phase Magnetoresistive Pattern 91 Track 100 Magnetic linear encoder device (magnetic encoder device)
213 (GND) Ground terminal (first common terminal)
223 (GND) Ground terminal (second common terminal)
250 Sensor surface

Claims (11)

In a magnetic sensor device having an A-phase magnetoresistive pattern and a B-phase magnetoresistive pattern having a phase difference of 90 ° from each other,
The A-phase magnetoresistive pattern includes a + a-phase magnetoresistive pattern for detecting movement of the magnetic scale with a phase difference of 180 °, and a -a-phase magnetoresistive pattern,
The B phase magnetoresistive pattern includes a + b phase magnetoresistive pattern and a -b phase magnetoresistive pattern for detecting movement of the magnetic scale with a phase difference of 180 °,
The + a phase magnetoresistive pattern, the −a phase magnetoresistive pattern, the + b phase magnetoresistive pattern, and the −b phase magnetoresistive pattern are formed on the same surface of a single substrate.
The magnetoresistive pattern of the phase and the magnetoresistive pattern of the −a phase are located diagonally, and the magnetoresistive pattern of the + b phase and the magnetoresistive pattern of the −b phase are located diagonally. A magnetic sensor device. 2. The magnetoresistive pattern of one of the + a phase magnetoresistive pattern and the −a phase magnetoresistive pattern according to claim 1, and the + b phase magnetoresistive pattern and the −b phase magnetoresistive pattern of claim 1. One magnetoresistive pattern is connected to a first common terminal formed between the formation regions of the one magnetoresistive pattern,
The other magnetoresistive pattern of the + a phase magnetoresistive pattern and the −a phase magnetoresistive pattern, and the other magnetoresistive pattern of the + b phase magnetoresistive pattern and the −b phase magnetoresistive pattern. Is connected to a second common terminal formed between the other magnetoresistive pattern formation regions. 3. A magnetic encoder comprising: the magnetic sensor device according to claim 1; and a magnetic scale having a track in which N and S poles are alternately arranged along a relative movement direction with respect to the magnetic sensor device. apparatus.   4. The magnetic sensor device according to claim 3, wherein a sensor surface formed by each pattern surface facing the magnetic scale of the A phase magnetoresistive pattern and the B phase magnetoresistive pattern faces the track. A magnetic encoder device that detects a rotating magnetic field whose in-plane direction changes on the magnetic scale.   5. The sensor surface according to claim 4, wherein in the width direction of the track, both end portions of the sensor surface are formed so as to exceed the edge portions at both ends of the track in the width direction. Magnetic encoder device. 5. The magnetic sensor device according to claim 4, wherein the sensor surface is opposed to an edge portion in the width direction of the track, and a rotating magnetic field whose direction in the in-plane direction changes can be detected at the edge portion. A magnetic encoder device. The magnetic scale according to claim 6, wherein a plurality of the tracks are arranged in parallel in the width direction.
In the plurality of tracks, the positions of the N pole and the S pole are shifted in the relative movement direction between adjacent tracks. 8. The magnetic encoder device according to claim 7, wherein, in the plurality of tracks, the positions of the N pole and the S pole are shifted by one magnetic pole in the relative movement direction between adjacent tracks. The magnetic scale according to claim 7 or 8, wherein the track has three or more rows in parallel in the width direction,
The sensor surface is opposed to three or more rows of tracks in the width direction, and the positions of the N pole and the S pole in the relative movement direction are coincident between the tracks opposed to both ends of the sensor surface. A magnetic encoder device.   10. The magnetic encoder device according to claim 7, wherein in the plurality of tracks, the N pole and the S pole are in direct contact between adjacent tracks.   11. The magnetic encoder device according to claim 3, wherein the magnetic encoder device is configured as a linear encoder or a rotary encoder.

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