JP2007266536A5 - - Google Patents

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Publication number
JP2007266536A5
JP2007266536A5 JP2006092965A JP2006092965A JP2007266536A5 JP 2007266536 A5 JP2007266536 A5 JP 2007266536A5 JP 2006092965 A JP2006092965 A JP 2006092965A JP 2006092965 A JP2006092965 A JP 2006092965A JP 2007266536 A5 JP2007266536 A5 JP 2007266536A5
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Japan
Prior art keywords
electrode
plasma
processing
processing apparatus
space
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JP2006092965A
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Japanese (ja)
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JP2007266536A (en
JP5064708B2 (en
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Priority to JP2006092965A priority Critical patent/JP5064708B2/en
Priority claimed from JP2006092965A external-priority patent/JP5064708B2/en
Priority to US11/694,158 priority patent/US20070227666A1/en
Publication of JP2007266536A publication Critical patent/JP2007266536A/en
Publication of JP2007266536A5 publication Critical patent/JP2007266536A5/ja
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Publication of JP5064708B2 publication Critical patent/JP5064708B2/en
Expired - Fee Related legal-status Critical Current
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Claims (10)

真空排気可能な処理容器と、
前記処理容器内に絶縁物または空間を介して電気的に浮いた状態で取り付けられる第１の電極と、
前記処理容器内に前記第１の電極と所定の間隔を空けて平行に配置され、前記第１の電極と対向させて被処理基板を支持する第２の電極と、
前記第１の電極と前記第２の電極と前記処理容器の側壁との間の処理空間に所望の処理ガスを供給する処理ガス供給部と、
前記処理空間で前記処理ガスのプラズマを生成するために前記第２の電極に第１の高周波を印加する第１の高周波給電部と
を有し、
第１の電極の中心部に前記第２の電極に向って突出する凸面部を設けるプラズマ処理装置。 A processing container capable of being evacuated;
A first electrode attached in an electrically floating state via an insulator or space in the processing container;
A second electrode disposed in parallel with the first electrode in the processing container at a predetermined interval and supporting the substrate to be processed so as to face the first electrode;
A processing gas supply unit that supplies a desired processing gas to a processing space between the first electrode, the second electrode, and a side wall of the processing container;
A first high-frequency power feeding unit that applies a first high frequency to the second electrode to generate plasma of the processing gas in the processing space;
The plasma processing apparatus which provides the convex part which protrudes toward the said 2nd electrode in the center part of a 1st electrode. 前記処理空間で生成されるプラズマについて所望のプラズマ密度分布特性が得られるように前記凸面部の突出量を設定する請求項１に記載のプラズマ処理装置。   The plasma processing apparatus according to claim 1, wherein the protrusion amount of the convex surface portion is set so that a desired plasma density distribution characteristic is obtained for the plasma generated in the processing space. 前記処理空間で生成されるプラズマについて所望のプラズマ密度分布特性が得られるように前記凸面部の口径を設定する請求項１または請求項２に記載のプラズマ処理装置。   The plasma processing apparatus according to claim 1, wherein the diameter of the convex surface portion is set so that a desired plasma density distribution characteristic is obtained for the plasma generated in the processing space. 前記凸面部が前記基板よりも小さな口径を有する請求項３に記載のプラズマ処理装置。   The plasma processing apparatus according to claim 3, wherein the convex surface portion has a smaller diameter than the substrate. 前記処理空間で生成されるプラズマについて所望のプラズマ密度分布特性が得られるように前記凸面部のエッジ部の傾斜角を設定する請求項１〜４のいずれか一項に記載のプラズマ処理装置。   The plasma processing apparatus according to any one of claims 1 to 4, wherein an inclination angle of the edge portion of the convex surface portion is set so that a desired plasma density distribution characteristic is obtained for the plasma generated in the processing space. 前記第１の電極と前記処理容器との間の静電容量を可変するための静電容量可変部を有する請求項１〜５のいずれか一項に記載のプラズマ処理装置。   The plasma processing apparatus according to claim 1, further comprising a capacitance varying unit configured to vary a capacitance between the first electrode and the processing container. 前記第１の電極と前記処理容器との間の静電容量が５０００ｐＦ以下の値になるように前記第１の電極の周囲を構成する請求項１〜６のいずれか一項記載のプラズマ処理装置。   The plasma processing apparatus according to any one of claims 1 to 6, wherein a periphery of the first electrode is configured so that a capacitance between the first electrode and the processing container is 5000 pF or less. . 前記第１の電極と前記処理容器との間の静電容量が２０００ｐＦ以下の値になるように前記第１の電極の周囲を構成する請求項７に記載のプラズマ処理装置。   The plasma processing apparatus according to claim 7, wherein the periphery of the first electrode is configured so that a capacitance between the first electrode and the processing container is 2000 pF or less. 前記処理容器が導電体からなり、接地される請求項１〜８のいずれか一項に記載のプラズマ処理装置。   The plasma processing apparatus according to claim 1, wherein the processing container is made of a conductor and is grounded. 前記第１の電極に所望の直流電圧を印加するための直流電源を有する請求項１〜９のいずれか一項記載のプラズマ処理装置。 The plasma processing apparatus according to any one of claims 1 to 9 , further comprising a DC power source for applying a desired DC voltage to the first electrode.
JP2006092965A 2006-03-30 2006-03-30 Plasma processing equipment Expired - Fee Related JP5064708B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006092965A JP5064708B2 (en) 2006-03-30 2006-03-30 Plasma processing equipment
US11/694,158 US20070227666A1 (en) 2006-03-30 2007-03-30 Plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006092965A JP5064708B2 (en) 2006-03-30 2006-03-30 Plasma processing equipment

Publications (3)

Publication Number Publication Date
JP2007266536A JP2007266536A (en) 2007-10-11
JP2007266536A5 true JP2007266536A5 (en) 2009-04-02
JP5064708B2 JP5064708B2 (en) 2012-10-31

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JP2006092965A Expired - Fee Related JP5064708B2 (en) 2006-03-30 2006-03-30 Plasma processing equipment

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JP (1) JP5064708B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009187673A (en) * 2008-02-01 2009-08-20 Nec Electronics Corp Plasma treatment device and method

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* Cited by examiner, † Cited by third party
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JPH03138382A (en) * 1989-10-20 1991-06-12 Nissin Electric Co Ltd Reactive ion etching device

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