JP2007254831A - Vacuum system, production device for solid detector and production method for solid detector - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To inexpensively configure a vacuum system provided with a plurality of vacuum chambers including a high vacuum chamber needing the large evacuation of predetermined exhausting capacity or above. <P>SOLUTION: In the vacuum system 1 equipped with a high vacuum chamber 2, the high vacuum chamber 2 is provided with at least two buffer chambers 5, 6 interconnected via valves 3, 4 capable of freely opening/closing. The respective buffer chambers 5, 6 are connected to vacuum chambers 9, 10 via valves 7, 8 capable of freely opening/closing, and the respective buffer chambers 5, 6 are connected to vacuum pumps 11, 12 exhausting the insides of the buffer chambers 5, 6. The valves 3, 4, 7, 8 are suitably opened/closed; the high vacuum chamber 2 can be exhausted simultaneously with the two vacuum pumps 11, 12, and further, the plurality of vacuum chambers including the high vacuum chamber can be suitably exhausted by a small number of vacuum pumps. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a vacuum apparatus, and more particularly to a vacuum deposition apparatus including a plurality of vacuum chambers including a high vacuum chamber that requires evacuation with a high exhaust capability.

  The present invention also relates to a manufacturing apparatus and a manufacturing method of a solid state detector provided with a vacuum device.

  In a vacuum apparatus having a plurality of vacuum chambers, a conventional vacuum pump is provided for each chamber, and a plurality of vacuum pumps may be provided for one chamber in order to improve the vacuum exhaust capability (Patent Document). 1, see FIG. Such a vacuum apparatus can be used in various fields such as vapor deposition, sputtering, and semiconductor processes.

  On the other hand, in the medical field and the like, various radiation image detectors (solid state detectors) that generate a charge upon receiving radiation that has passed through the subject and record the radiation image related to the subject by accumulating the charge are proposed, It has been put into practical use.

  As a radiation image detector as described above, for example, Patent Document 2 discloses an electrode layer that transmits radiation, a photoconductive layer for recording that generates charges when irradiated with radiation, and a latent image charge. A charge transport layer that acts as an insulator and acts as a conductor for transport charges having a polarity opposite to that of the latent image charge, a read photoconductive layer that generates charges when irradiated with read light, and read light A radiation image detector is proposed, in which transparent linear electrodes that extend in a line that transmits light and electrode layers in which light-shielding linear electrodes that extend in a line that blocks reading light are alternately arranged in parallel are stacked in this order. ing.

As a device layer including a recording photoconductive layer, a charge transport layer, and a reading photoconductive layer, amorphous selenium is generally used, and a method of forming this selenium device layer by vapor deposition is proposed in Patent Document 3 and the like. .
Japanese Patent Laid-Open No. 5-44034 JP 2000-284056 A JP 2000-319773 A

  Conventionally, vacuum deposition apparatuses are known, but many perform deposition coating on small members such as optical lenses, and the deposited film is a thin film on the order of nm to several μm. On the other hand, in the case of the above-described solid state detector, it is necessary to uniformly form a thick film of 100 μm or more (on the order of several hundred μm to several mm) on a large substrate of about 17 inches or more.

  A vacuum chamber for forming a thick film requires evacuation with a large evacuation capacity as compared with a normal vacuum chamber, and therefore, it is necessary to include two or more vacuum pumps. In the production of the solid state detector, not only the selenium device layer but also other layers such as an insulating layer and an electrode layer are formed by vapor deposition. The selenium device layer, the insulating layer, and the electrode layer are generally subjected to vapor deposition in different vacuum vapor deposition chambers (vacuum chambers), and the vapor deposition apparatus needs to include a plurality of vacuum vapor deposition chambers. Conventionally, since one or a plurality of vacuum pumps are provided for each vacuum deposition chamber, the cost of the entire apparatus has been very expensive. Note that this is not limited to a vapor deposition apparatus provided with a vacuum chamber used as a vapor deposition chamber, and the same applies to a vacuum apparatus provided with a plurality of vacuum chambers.

  In view of the above circumstances, an object of the present invention is to provide a vacuum apparatus having a configuration capable of suppressing the cost of the entire apparatus.

  Another object of the present invention is to provide a solid detector manufacturing apparatus and a manufacturing method capable of efficiently manufacturing a solid detector while suppressing apparatus cost.

  A first vacuum apparatus according to the present invention includes a high vacuum chamber that needs to be evacuated with a large exhaust capacity greater than or equal to a predetermined level, and at least two buffer chambers connected to the high vacuum chamber via openable and closable valves, respectively. Each of the buffer chambers includes a vacuum chamber connected via an openable / closable valve, and a vacuum pump connected to each of the buffer chambers for exhausting the buffer chamber. Is.

  The second vacuum apparatus of the present invention includes a high vacuum chamber that needs to be evacuated with a large evacuation capacity that is greater than or equal to a predetermined level, and at least one buffer chamber connected to the high vacuum chamber via an openable / closable valve; A vacuum chamber connected to the buffer chamber via an openable / closable valve; a vacuum pump connected to the buffer chamber for exhausting the buffer chamber; and the high vacuum connected to the high vacuum chamber And a vacuum pump for exhausting the inside of the chamber.

  Here, “a high vacuum chamber that requires evacuation with a large evacuation capacity greater than or equal to a predetermined value” means a vacuum chamber that requires evacuation with a large evacuation capacity compared to other vacuum chambers. Specifically, a vacuum chamber that is not sufficiently evacuated when a sufficient vacuum pump is used to evacuate other vacuum chambers.

  The first and second vacuum devices of the present invention may be configured as an in-line type device in which the high vacuum chamber and the vacuum chamber are arranged in a line through the buffer chamber, or the high vacuum chamber A substrate transfer chamber having a vacuum chamber and a transfer means for transferring the substrate into and out of the vacuum chamber is further provided, and the high vacuum chamber and the vacuum chamber are respectively connected to the substrate transfer chamber and surround the substrate transfer chamber. You may comprise as a cluster type apparatus arrange | positioned.

  The vacuum apparatus of the present invention is particularly a vacuum vapor deposition chamber for depositing a plurality of layers including a thick film layer on a substrate, wherein the high vacuum chamber and the vacuum chamber are the thick film in the high vacuum chamber. A layer can be deposited.

  The solid state detector manufacturing apparatus of the present invention records at least the first electrode on the substrate, which receives the recording light carrying the image information, records the image information, and outputs an image signal representing the recorded image information. An apparatus for manufacturing a solid detector in which a layer, an insulating layer, a selenium device layer including a thick selenium layer, and a second electrode layer are sequentially stacked, and includes a vacuum device including the vacuum deposition chamber, The insulating layer, the selenium device layer, and the second electrode layer are sequentially deposited on the substrate on which the first electrode layer is laminated in the vacuum chamber or the high vacuum chamber. It is characterized by that.

  The method of manufacturing a solid state detector according to the present invention includes at least a first electrode on a substrate that receives image light carrying image information, records the image information, and outputs an image signal representing the recorded image information. A method of manufacturing a solid detector in which a layer, an insulating layer, a selenium device layer including a thick selenium layer, and a second electrode layer are sequentially stacked, using the vacuum apparatus including the vacuum deposition chamber And sequentially depositing the insulating layer, the selenium device layer, and the second electrode layer on the substrate on which the first electrode layer is laminated in the vacuum chamber or the high vacuum chamber. Features.

  A first vacuum apparatus according to the present invention includes a high vacuum chamber that needs to be evacuated with a large exhaust capacity greater than or equal to a predetermined level, and at least two buffer chambers connected to the high vacuum chamber via openable and closable valves, respectively. Each of the buffer chambers is provided with a vacuum chamber connected via an openable / closable valve, and a vacuum pump connected to each of the buffer chambers for exhausting the inside of the buffer chamber. By appropriately opening and closing the valve, the buffer chamber equipped with the vacuum pump can evacuate the adjacent vacuum chamber and / or the high vacuum chamber, and the high vacuum chamber is simultaneously evacuated by at least two vacuum pumps. can do.

  The second vacuum apparatus of the present invention includes a high vacuum chamber that needs to be evacuated with a large evacuation capacity that is greater than or equal to a predetermined level, and at least one buffer chamber connected to the high vacuum chamber via an openable / closable valve; A vacuum chamber connected to the buffer chamber via an openable / closable valve; a vacuum pump connected to the buffer chamber for exhausting the buffer chamber; and the high vacuum chamber connected to the high vacuum chamber The vacuum pump that evacuates the buffer chamber can evacuate the vacuum chamber and / or the high vacuum chamber by appropriately opening and closing the valve. The vacuum chamber can be evacuated simultaneously by at least two vacuum pumps.

  According to the first and second vacuum apparatuses of the present invention, the number of vacuum pumps can be suppressed as compared with the case where one or two vacuum pumps are provided in each vacuum chamber and high vacuum chamber. . Although it is possible to reduce the number of vacuum pumps by not providing two vacuum pumps for the high vacuum chamber and providing vacuum pumps having a larger exhaust capacity than the others, a vacuum pump having a large exhaust capacity is expensive. Therefore, the cost suppression effect of the entire apparatus is small, while according to the first and second vacuum apparatuses of the present invention, while using a vacuum pump that evacuates a high vacuum chamber from another vacuum chamber, Since the number can be reduced, the cost control effect is high.

  In the solid-state detector manufacturing apparatus according to the present invention, the high vacuum chamber and the vacuum chamber are vacuum deposition chambers for forming a plurality of layers including a thick film layer on a substrate. Since the above-described first or second vacuum device for vapor deposition is provided, the number of vacuum pumps can be reduced as compared with the conventional device, and the overall cost can be reduced. .

  In addition, according to the method for manufacturing a solid detector of the present invention, since a vacuum apparatus including a plurality of vacuum chambers including a high vacuum chamber is used, an insulating layer formed by vapor deposition at the time of manufacturing the solid detector, Since the selenium device layer and the electrode layer can be sequentially deposited without being exposed to the outside air, it is possible to suppress the occurrence of protrusion defects and image defects on the surface of the solid detector. Protruding defects are considered to be caused by dust and other dust adhering to the insulating layer and selenium device layer, and all the deposited layers are laminated consistently without exposing them to the outside air, thereby greatly suppressing the protruding defects. Can be considered.

  Embodiments of the present invention will be described below. The vacuum apparatus 1 according to the first embodiment of the present invention is connected to a high vacuum chamber 2 that needs to be evacuated with a large exhaust capacity that is greater than or equal to a predetermined value, and a high vacuum chamber 2 via openable and closable valves 3 and 4. The vacuum chambers 9 and 10 connected to the two buffer chambers 5 and 6 and the buffer chambers 5 and 6 via the openable and closable valves 7 and 8 and the buffer chambers 5 and 6 respectively. And vacuum pumps 11 and 12 for evacuating the buffer chambers 5 and 6.

In the present vacuum apparatus 1, when a predetermined process is performed in the high vacuum chamber 2 (the high vacuum chamber 2 is used), the valves 3 and 4 are opened, the valves 7 and 8 are closed, and the vacuum pumps 11 and 12 are closed.
Is activated. The vacuum pumps 11 and 12 evacuate the buffer chambers 5 and 6 connected thereto, thereby evacuating the high vacuum chamber 2 connected to the buffer chambers 5 and 6. That is, the high vacuum chamber 2 is evacuated by the two vacuum pumps 11 and 12 at the same time. When processing is performed in the vacuum chamber 9, the valve 3 is closed, the valve 7 is opened, and the vacuum pump 11 is operated. The vacuum pump 11 exhausts the vacuum chamber 9 via the exhaust in the buffer chamber 5. Similarly, when processing is performed in the vacuum chamber 10, the valve 4 is closed, the valve 8 is opened, and the vacuum pump 12 is operated. The vacuum pump 12 exhausts the vacuum chamber 10 through the exhaust in the buffer chamber 6. Thus, the exhaust in the high vacuum chamber 2 to be used can be appropriately performed by the two vacuum pumps 11 and 12, and the exhaust in the vacuum chambers 9 and 10 can be performed by the single vacuum pump, respectively.

  According to the conventional apparatus configuration, a total of four vacuum pumps are required, two for the high vacuum chamber 2 and one for the vacuum chambers 9, 10. The vacuum chambers 2, 9, and 10 can be evacuated by one vacuum pump, and the overall apparatus cost can be suppressed as compared with the conventional apparatus.

  The vacuum device 21 according to the second embodiment of the present invention is connected to a high vacuum chamber 22 that needs to be evacuated with a large exhaust capacity greater than a predetermined value, and is connected to the high vacuum chamber 22 via an openable / closable valve 23. One buffer chamber 24, a vacuum chamber 26 connected to the buffer chamber 24 via an openable / closable valve 25, a vacuum pump 27 connected to the buffer chamber 24 and exhausting the inside of the buffer chamber 24, A vacuum pump 28 connected to the high vacuum chamber 22 and exhausting the inside of the high vacuum chamber 22 is provided.

  In the present vacuum apparatus 21, when a predetermined process is performed in the high vacuum chamber 22 (the high vacuum chamber 22 is used), the valve 23 is opened, the valve 25 is closed, and the vacuum pumps 27 and 28 are operated. The vacuum pump 27 evacuates the high vacuum chamber 22 connected to the buffer chamber 24 by evacuating the connected buffer chamber 24, and the vacuum pump 28 directly evacuates the high vacuum chamber 22. Do. As a result, the high vacuum chamber 22 is evacuated by the two vacuum pumps 27 and 28 simultaneously. When processing is performed in the vacuum chamber 26, the valve 23 is closed, the valve 25 is opened, and the vacuum pump 27 is operated. The vacuum pump 27 exhausts the vacuum chamber 26 through the exhaust in the buffer chamber 24. As described above, when the high vacuum chamber 22 is used, evacuation can be appropriately performed by the two vacuum pumps 27 and 28, and when the vacuum chamber 26 is used, the single vacuum pump 27 can appropriately evacuate.

  According to the conventional apparatus configuration, two vacuum pumps are required, two for the high vacuum chamber 22 and one for the vacuum chamber 26. However, according to this embodiment, two vacuum pumps are used. Thus, the vacuum chambers can be evacuated, and the overall apparatus cost can be suppressed as compared with the conventional apparatus.

  The predetermined processing performed in each vacuum chamber of the vacuum devices 1 and 21 of the first and second embodiments may be any processing such as vapor deposition, sputtering, and semiconductor process.

  Next, an embodiment in which the vacuum apparatus of the present invention is used for manufacturing a solid state detector will be described as a third embodiment. FIG. 3 is a diagram showing a schematic configuration of a vacuum apparatus according to a third embodiment of the present invention provided in a solid state detector manufacturing apparatus.

  The vacuum apparatus 30 of the present embodiment is a vacuum chamber into which the substrate 45 is first carried in, and a substrate preparation chamber 31 for evacuating the substrate 45 exposed to the outside air before carrying it into the film forming chamber, An insulating layer film forming chamber 32 that is a vacuum chamber for forming an insulating layer on the substrate 45 by vapor deposition, a first buffer chamber 33, and a device layer forming device that is a high vacuum chamber for forming a device layer by vapor deposition. The film chamber 34, the second buffer chamber 35, the electrode layer film forming chamber 36, which is a vacuum chamber for forming an electrode layer, and the third buffer chamber 38 are arranged in a line through valves 37a to 37f that can be freely opened and closed. It is an in-line type vacuum apparatus arranged. Vacuum pumps 41, 42, 44 are connected to the buffer chambers 33, 35, 38 and the substrate preparation chamber 31, respectively. The vacuum pump 43 provided in the substrate preparation chamber 31 may be an inexpensive pump having a lower exhaust capacity than the vacuum pumps 41, 42, 44 provided in the buffer chambers 33, 35, 38.

  The insulating layer film forming chamber 32, the device layer film forming chamber 34, and the electrode layer film forming chamber 36 are vacuum deposition chambers. In particular, since the device layer film forming chamber 34 forms a thick film layer, other vacuum chambers are used. It is a high vacuum chamber to be evacuated with a higher exhaust capacity. The device layer film forming chamber 34 is connected to the first and second buffer chambers 33 and 35 via valves 37c and 37d, and two vacuum pumps 41 and 42 for exhausting the inside of the buffer chambers 33 and 35 are provided. It can be evacuated by two vacuum pumps.

  The substrate 45 is first loaded into the substrate preparation chamber 31 and is sequentially transferred through the valves, buffer chambers, and film formation chambers. After the vapor deposition process is completed, the substrate 45 is returned to the substrate preparation chamber 31 and unloaded from the substrate preparation chamber 31. Thus, each valve has a maximum opening diameter and a buffer chamber size that is sufficient for the substrate to pass through.

  The solid state detector manufactured using the vacuum apparatus 30 receives at least the recording light carrying the image information, records the image information, and outputs an image signal representing the recorded image information. A first electrode layer, an insulating layer, a selenium device layer including a thick selenium layer, and a second electrode layer are sequentially laminated. A specific example thereof will be described with reference to FIG. FIG. 4 is an example of a specific solid state detector, and shows a partial cross-sectional view thereof.

Solid-state detector 50, on the light transmitting substrate 51 of glass or the like, the first electrode layer 52, an insulating layer 54 made of CeO _2, Se-As layer 55, a-Se consisting readout photoconductive layer 56, It has a structure in which a charge transport layer 57 made of As ₂ Se ₃ , a recording photoconductive layer 58 made of a-Se, and a second electrode layer 59 made of Au are laminated in this order.

  The first electrode layer 52 includes a plurality of first linear electrodes 52a made of IZO that transmits reading light, and a plurality of second linear electrodes 52b provided between the first linear electrodes 52a, respectively. A linear light-shielding insulator 52c made of a red resist provided on the substrate 51 side of each second linear electrode 52b, and further, the linear light-shielding insulator 52c, the first linear electrode 52a, and the first linear electrode 52a An insulating film 53 is provided between the two linear electrodes 52b.

  The reading photoconductive layer 56 is a layer that exhibits conductivity and generates a charge pair when irradiated with reading light, and the charge transport layer 57 acts as an insulator for, for example, negative charges, The recording photoconductive layer 58 has a function of substantially acting as a conductor, and exhibits electrical conductivity and generates a charge pair when irradiated with a recording electromagnetic wave (light or radiation).

The thickness of each layer is, for example, the CeO ₂ insulating layer 54 is 0.1 μm, the Se-As layer 55 is 0.05 μm, the reading photoconductive layer 56 is 10 μm, and the charge transport layer 57 is thick. The thickness is 0.2 μm, and the thickness of the recording photoconductive layer 58 is 200 μm. The Se—As layer 55 is made of Se doped with 10% As.

  Hereinafter, the manufacturing method of the solid state detector 50 will be described together with the operation of the vacuum apparatus 30. First, the first electrode layer 52 is formed on the substrate 51 in a separate process. The substrate 45 is transferred into the vacuum apparatus 30 in a state where the first electrode layer 52 is laminated. The substrate 45 on which the first electrode layer 52 is laminated is first carried into the substrate preparation chamber 31. The valve 37 a between the substrate preparation chamber 31 and the insulating layer film formation chamber 32 is closed, and the vacuum pump 43 is operated to exhaust the substrate preparation chamber 31.

After the substrate 45 is evacuated in the substrate preparation chamber 31 for a predetermined time, the valve 37c is closed, the valves 37a and 37b are opened, the substrate 45 is transferred to the insulating layer deposition chamber 32, and then the valve 37a is closed. . The insulating layer film forming chamber 32 is evacuated by the vacuum pump 42 through the buffer chamber 33, and in this insulating layer film forming chamber 32, a CeO ₂ insulating layer 54 is deposited on the first electrode layer 52 provided on the substrate 45. Form. The substrate 45 on which the insulating layer 54 is deposited is transported to the device layer deposition chamber 34 through the buffer chamber 33 with the valve 37e closed and the valves 37b, 37c, and 37d opened. Closed. The device layer deposition chamber 34 is evacuated by the two vacuum pumps 41 and 42 through the open valves 37 c and 37 d and the adjacent buffer chambers 33 and 35. In the device layer forming chamber 34, sequentially depositing a Se-As layer 55, a-Se photoconductive layer for reading 56, _As 2 Se ₃ charge transport layer 57 and the a-Se recording photoconductive layer 58 on the insulating layer 54 Form. Among these layers 55 to 58 constituting the device layer, the thickness of the recording photoconductive layer 58 is particularly formed as a thick film in order to improve sensitivity.

  The substrate 45 on which the device layer is deposited is transferred to the electrode layer deposition chamber 36 through the buffer chamber 35 with the valve 37e opened, and then the valve 37e is closed. On the other hand, the valve 37 f is opened, and the electrode layer deposition chamber 36 is evacuated by the vacuum pump 44 through the buffer chamber 38. In the electrode layer deposition chamber 36, an Au second electrode layer 59 is formed by vapor deposition on the device layer. Thus, after the layers from the insulating layer 54 to the Au second electrode layer 59 are formed by vapor deposition, the substrate 45 is returned to the substrate preparation chamber 31 and carried out of the vacuum apparatus 30.

  Thus, in the vacuum apparatus 30 of this embodiment, during the vapor deposition process of each layer, it can form into a film sequentially, without exposing a board | substrate and each layer to external air. As a result, a stable film with few defects can be formed, and image defects can be reduced.

  In addition, each film forming chamber is provided with a vacuum pump. In particular, the device layer film forming chamber, which is a high vacuum chamber, has a high pumping capacity vacuum pump or two vacuum pumps compared with a conventional vacuum apparatus. Since the vacuum device suppresses the above, the cost can be reduced as a whole as a solid detector manufacturing apparatus.

  In the vacuum apparatus 30 of the above embodiment, the electrode layer film forming chamber 36 may not be provided with the adjacent buffer chamber 38 via the valve 37f, and the vacuum pump 44 may be directly connected to the vacuum chamber 44. Furthermore, a configuration without the vacuum pump 44 is also possible. This can further reduce the cost. If the vacuum pump 44 is not provided, when the electrode layer film forming chamber 36 is evacuated, the valve 37d is appropriately closed and the valve 37e is opened to operate the vacuum pump 41 to evacuate. .

  In the case where the number of vapor deposition steps is increased due to, for example, a case where another layer is to be deposited, it is possible to add a vacuum chamber after the buffer chamber 38 (on the right side in the drawing). In the above description, the substrate 45 is carried into and out of the vacuum apparatus 30 from the substrate preparation chamber 31. However, the substrate take-out chamber provided with the same vacuum pump as the substrate preparation chamber after the buffer chamber 38 is described. You may make it provide. In this case, since the substrate 45 can be transported in one direction instead of reciprocating in the vacuum apparatus, a plurality of substrates are sequentially carried into the vacuum apparatus, and vapor deposition in each deposition chamber is performed on the plurality of substrates. Processing can be performed sequentially, and work efficiency can be improved.

  The vacuum apparatus 30 of the above embodiment is characterized in that the device layer film forming chamber 34 can be evacuated by two vacuum pumps. However, in the device layer film forming chamber 34, two vacuum pumps are not necessarily used. When it is not necessary to exhaust, it is possible to use only one of the vacuum pumps.

  In the following, the solid state detector 50 manufactured by the apparatus of the present embodiment is not connected to the insulating layer film forming chamber, the device layer film forming chamber, and the electrode layer film forming chamber, and each is provided in a separate vacuum vapor deposition device, The results of a comparative evaluation with a solid state detector manufactured by a conventional method in which the substrate is once exposed to the outside air after processing in each film forming chamber will be described.

  The layer configuration of the solid state detector of the comparative example was the same as that of the solid state detector of the above-described embodiment as an example. However, the substrate on which the first electrode layer is formed is vapor-deposited after the insulating film is deposited in the insulating layer deposition chamber, then once exposed to the outside air, and then carried into the device layer deposition chamber to deposit the device layer. Further, after being once exposed to the outside air, it was carried into an electrode layer film forming chamber and an electrode layer was formed by vapor deposition. Note that the degree of vacuum (evacuation amount) in each film formation chamber was the same as in the example.

As a first evaluation method, the film formation surface of the solid detector, that is, the surface of the second electrode layer was observed with a microscope, and the number of protruding defects of various sizes per 100 cm ² was counted. FIG. 6 is a graph showing the number of protruding defects of each size for the examples and comparative examples.

As a second evaluation method, the number of image defects having defect sizes of 5 pixels, 6 pixels, and 7 pixels was counted. Here, the size of one pixel is 50 μm square. FIG. 7 is a graph showing the number of image defects of each size for the examples and comparative examples. As shown in FIG. 8A, the second evaluation is performed from the second electrode layer 59 side in a state where a voltage of −2 kV is applied to the second electrode layer 59 of the solid state detector 50 by the high voltage power supply 60. After uniform exposure by irradiating with 200 mR radiation, as shown in FIG. 8B, with the second electrode layer 59 grounded, the blue reading light L1 is irradiated from the first electrode layer side. Images were imaged and image defects were detected. The blue reading light L1 was irradiated at 50 μW / mm ² for 1 ms.

  By connecting the film forming chambers and forming the film from the insulating layer 54 to the second electrode layer 59 without exposing the substrate to the outside air, the number of protrusion defects and the number of image defects could be greatly reduced. Is clear from FIGS. 6 and 7.

  Another embodiment in which the vacuum apparatus of the present invention is used for manufacturing a solid state detector will be described as a fourth embodiment. FIG. 8 is a diagram showing a schematic configuration of a vacuum apparatus according to a fourth embodiment of the present invention provided in a solid state detector manufacturing apparatus.

  The vacuum apparatus 70 according to the present embodiment is a vacuum chamber into which the substrate 45 is first carried, and a substrate preparation chamber 72 for evacuating the substrate exposed to the outside air before carrying it into the film forming chamber, An insulating layer film forming chamber 73 which is a vacuum chamber for forming an insulating film by vapor deposition thereon, a device layer film forming chamber 74 which is a high vacuum chamber for forming a device layer by vapor deposition, and an electrode layer are formed. The electrode chamber film forming chamber 75 which is a vacuum chamber for carrying out the transfer is connected to a transfer chamber 71 provided with a transfer robot (not shown) for loading / unloading the substrate 45 into / from each chamber. Is a cluster-type vacuum device arranged so as to surround.

  The vacuum chambers 72, 73, 75 and the high vacuum chamber 74 that surround the transfer chamber 71 and are adjacent to each other are connected to each other through valves 78a to 78h and buffer chambers 76a to 76d that can be freely opened and closed. Each of the buffer chambers 76a to 76d is provided with vacuum pumps 80a to 80d for exhausting the inside of the buffer chamber. One of the vacuum pumps 80a and 80d of the buffer chambers 76a and 76d adjacent to the substrate preparation chamber 72 is not necessarily provided.

  Since loading / unloading of substrates into / from the vacuum chambers 72, 73, 74 and 75 is performed via the transfer chamber 71, the valves 78a to 78h and the buffer chambers 76a to 76d are provided in the respective vacuum chambers as necessary by opening and closing the valves. As long as the substrate can be evacuated, the substrate does not need to be large enough to pass. The transfer chamber 71 is connected to a vacuum pump (not shown) that exhausts the inside of the transfer chamber 71.

  In addition, a shutter (not shown) is provided between the transfer chamber 71 and each of the vacuum chambers 72, 73, 74, and 75, and the shutter is closed except when the substrate 45 is transferred into and out of the transfer chamber 71. The substrate is carried into and out of the vacuum apparatus 70 from the substrate preparation chamber 72.

  Hereinafter, the operation of the vacuum apparatus 70 when manufacturing the solid state detector 50 will be briefly described. First, the first electrode layer 52 is formed on the substrate 51 in a separate process. The substrate 45 is transferred into the vacuum device 70 in a state where the first electrode layer 52 is laminated. The substrate 45 on which the first electrode layer 52 is laminated is first carried into the substrate preparation chamber 72. The valves 78b and 78h are closed, the valve 78a is opened, and the vacuum pump 80a is operated to evacuate the substrate preparation chamber 72.

After evacuating the substrate 45 in the substrate preparation chamber 72 for a predetermined time, the shutter between the preparation chamber 72 and the transfer chamber 71 is opened, and the substrate 45 is transferred to the transfer chamber 71 by the transfer robot. Thereafter, the shutter between the preparation chamber 72 and the transfer chamber 71 is closed, the shutter of the insulating layer film forming chamber 73 is opened, and the substrate 45 is carried into the insulating layer film forming chamber 73 by the transfer robot. At this time, valves 78a and 78c are closed, 78b is opened, and insulating layer film forming chamber 73 is evacuated by vacuum pump 80a through buffer chamber 76a. In the insulating layer deposition chamber 73, a CeO ₂ insulating layer 54 is deposited on the first electrode layer 52 provided on the substrate 45. Thereafter, the device layers 56 to 58 and the second electrode layer 59 are sequentially deposited in the device layer film forming chamber 74 and the electrode layer film forming chamber 75 via the transfer chamber 71, respectively. Sequentially deposited forming a Se-As layer 55, a-Se photoconductive layer for reading 56, _As 2 Se ₃ charge transport layer 57 and the a-Se recording photoconductive layer 58 in the device layer forming chamber 74 on the insulating layer 54 In this case, the valves 78d and 78e are opened, the valves 78c and 78f are closed, and the two vacuum pumps 80b and 80c are evacuated through the buffer chambers 76b and 76c. On the other hand, when the second electrode layer 59 is deposited in the electrode layer deposition chamber 75, the valve 78g is opened, the valves 78f and 78h are closed, and the vacuum pump 80d is evacuated through the buffer chamber 76d. The substrate 45 on which the second electrode layer is formed is carried into the substrate preparation chamber 72 again, and is carried out of the vacuum chamber 70 from the preparation chamber 72.

  As described above, in the vacuum apparatus 70 of the present embodiment as well, since the substrate and each layer can be sequentially formed without being exposed to the outside air during the vapor deposition process of each layer, the same as in the case of the third embodiment described above. In addition, a stable film with few defects can be formed, and image defects can be reduced.

  FIG. 9 is a diagram showing a schematic configuration of a vacuum apparatus according to the fifth embodiment of the present invention. The vacuum apparatus 90 according to the present embodiment is arranged so as to surround the transfer chamber 91, respectively connected to the transfer chamber 91 provided with a transfer robot serving as a loading / unloading means for loading and unloading the substrate. Eight vacuum chambers 92, eight buffer chambers 93 connected to each vacuum chamber 92 through openable / closable valves 95, and eight buffer chambers 93 provided in each buffer chamber 93 for exhausting the buffer chambers 93 And a vacuum pump 97. Further, a valve (not shown) is provided between the transfer chamber 91 and each vacuum chamber, and the transfer chamber 91 is provided with a vacuum pump (not shown) for exhausting the transfer chamber.

  Since each of the vacuum chambers 92 is adjacent to two buffer chambers each having a vacuum pump, by appropriately opening and closing the valve 95, the exhaust capacity of the vacuum chamber 92 required as needed is improved. Even so, it can be used as a high vacuum chamber.

  Further, in the case where only one vacuum chamber 92A among the plurality of vacuum chambers 92 is a high vacuum chamber, the buffer chambers 93 on both sides thereof are provided with a vacuum pump 97, but the other vacuum chambers 92 About the buffer chamber of both adjacent, you may comprise so that a vacuum pump may be provided only in any one.

The figure which shows schematic structure of the vacuum apparatus of the 1st Embodiment of this invention. The figure which shows schematic structure of the vacuum apparatus of the 2nd Embodiment of this invention. The figure which shows schematic structure of the vacuum device of the 3rd Embodiment of this invention. Sectional view showing an example of a solid state detector The figure for demonstrating the 2nd evaluation method of a solid state detector The graph which shows the number of defects according to the protrusion defect size of an Example and a comparative example The graph which shows the number of defects according to the image defect size of an Example and a comparative example The figure which shows schematic structure of the vacuum apparatus of the 4th Embodiment of this invention. The figure which shows schematic structure of the vacuum device of the 5th Embodiment of this invention.

Explanation of symbols

1, 2, 30, 70, 90 Vacuum device 2, 22 High vacuum chamber 3, 4, 7, 8, 23, 25 Valve 5, 6, 24 Buffer chamber 9, 10, 26 Vacuum chamber 11, 12, 27, 28 Vacuum pump 31 Substrate preparation chamber 32 Insulating layer deposition chamber 33, 35, 37 Buffer chamber 34 Device layer deposition chamber 36 Electrode layer deposition chamber 37a-37f Valve 41, 42, 43, 44 Vacuum pump 45 Substrate 50 Solid detector 51 substrate 52 first electrode layer 54 insulating layer 55 Se-As layer 56 photoconductive layer for reading 57 charge transport layer 58 photoconductive layer for recording 59 second electrode layer

Claims (7)

A high-vacuum chamber that needs to be evacuated with a large evacuation capacity greater than a predetermined value;
At least two buffer chambers respectively connected to the high vacuum chamber via openable and closable valves;
A vacuum chamber connected to each of the buffer chambers via an openable / closable valve;
A vacuum apparatus, comprising: a vacuum pump connected to each of the buffer chambers for exhausting the inside of the buffer chamber. A high-vacuum chamber that needs to be evacuated with a large evacuation capacity greater than a predetermined value;
At least one buffer chamber connected to the high vacuum chamber via an openable / closable valve;
A vacuum chamber connected to the buffer chamber via an openable / closable valve;
A vacuum pump connected to the buffer chamber and evacuating the buffer chamber;
A vacuum apparatus comprising: a vacuum pump connected to the high vacuum chamber and exhausting the inside of the high vacuum chamber.   The vacuum apparatus according to claim 1 or 2, wherein the high vacuum chamber and the vacuum chamber are arranged in a line through the buffer chamber. A substrate transfer chamber provided with transfer means for transferring the substrate into and out of the high vacuum chamber and the vacuum chamber;
The vacuum apparatus according to claim 1, wherein the high vacuum chamber and the vacuum chamber are connected to the substrate transfer chamber, respectively, and are disposed so as to surround the substrate transfer chamber. The high vacuum chamber and the vacuum chamber are vacuum deposition chambers for forming a plurality of layers including a thick film layer on a substrate,
The vacuum apparatus according to claim 1, wherein the thick film layer is deposited in the high vacuum chamber. At least a first electrode layer, an insulating layer, and a thick selenium layer are provided on a substrate for recording the image information upon receiving irradiation of recording light carrying the image information and outputting an image signal representing the recorded image information. An apparatus for manufacturing a solid-state detector in which a selenium device layer and a second electrode layer are sequentially laminated,
A vacuum device according to claim 5,
The insulating layer, the selenium device layer, and the second electrode layer are sequentially deposited on the substrate on which the first electrode layer is laminated in the vacuum chamber or the high vacuum chamber. An apparatus for manufacturing a solid state detector. At least a first electrode layer, an insulating layer, and a thick selenium layer are provided on a substrate for recording the image information upon receiving irradiation of recording light carrying the image information and outputting an image signal representing the recorded image information. A manufacturing method of a solid state detector in which a selenium device layer and a second electrode layer are sequentially laminated,
6. The vacuum apparatus according to claim 5, wherein the insulating layer, the selenium device layer, and the second electrode are formed on the substrate on which the first electrode layer is laminated in the vacuum chamber or the high vacuum chamber. A method of manufacturing a solid state detector, wherein the layers are sequentially deposited.

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