JP2007237479A - Method for manufacturing liquid droplet discharge head - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To process a chamber with a high accuracy by wet etching. <P>SOLUTION: If maintaining the accuracy of a stage section 72B supporting a glass substrate 72 with forming a pressure room by two steps, it is not necessary to form a grooved part 72A with a high accuracy. Accordingly, the pressure room can be formed by the low-cost wet etching and the like. A vibrating plate 48 can be formed with a high accuracy and at a low cost by making the glass substrate 72 to be a film after embedding a poly-silicon 76 into the groove part 72A and the stage section 72B. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a nozzle that ejects droplets of ink and the like, a pressure chamber that is in communication with the nozzle and filled with a liquid such as ink, a diaphragm that forms part of the pressure chamber, and a diaphragm that is displaced The present invention relates to a method for manufacturing a droplet discharge head having a piezoelectric element.

  Conventionally, ink droplets are selectively ejected from a plurality of nozzles of an ink jet recording head that reciprocates in the main scanning direction or an ink jet recording head having a paper width, and is applied to a recording medium such as recording paper that is conveyed in the sub scanning direction. 2. Related Art Inkjet recording apparatuses that print characters and images are known.

  In the ink jet recording head having such a configuration, it is desired to realize a high resolution of 1200 dpi and further 2400 dpi as a next generation ink jet recording head. At this time, in order to obtain high resolution, a high-density, multiple-row nozzle arrangement is required.

  In order to obtain a high-density and high-precision inkjet recording head, it is necessary to select a process capable of high-precision processing such as dry etching in the LSI process of the manufacturing process. However, the production by these processes is expensive.

  Therefore, there is a method of manufacturing an ink jet recording head by wet etching that can be expected to reduce costs (see Patent Document 1). However, when a chamber (pressure chamber) is processed on a substrate having a thickness of, for example, 50 μm by using wet etching, it is difficult to ensure dimensional accuracy, and it is necessary to perform dimensional correction after processing.

  Therefore, as a method of not performing dimensional correction after processing, a shallow recess that becomes a part of the chamber is etched on the surface of the substrate, and a through-hole penetrating the recess from the back surface of the substrate is formed (patent) Reference 2). In other words, if a through-hole serving as a chamber is formed from the surface side of the substrate, the accuracy of the chamber cannot be ensured. Therefore, this is a method of forming a recess serving as a chamber with a depth that can ensure dimensional accuracy.

However, in the case of Patent Document 2, it is necessary to align the recesses to be processed from the front surface side of the substrate and the through holes to be processed from the back surface side, which may increase the manufacturing cost. In addition, when a diaphragm is formed on the chamber after forming the chamber in the process of Patent Document 2, a thick diaphragm is pasted and polished until a predetermined thickness is obtained, or the diaphragm is thinned in advance. Paste. In the case of a thick diaphragm, it is difficult to polish to a predetermined thickness with the accuracy required for the diaphragm. Moreover, in the case of a thin diaphragm, handling is not easy. For this reason, manufacturing time is required and the manufacturing cost increases.
JP-A-6-55733 Japanese Patent Laid-Open No. 10-181032

  In view of the above problems, an object of the present invention is to process a chamber with high accuracy by wet etching.

  The present invention described in claim 1 is a pressure chamber that is in communication with a nozzle that discharges droplets and is filled with a liquid, a diaphragm that forms part of the pressure chamber, and a piezoelectric element that displaces the diaphragm. A method for manufacturing a droplet discharge head, comprising: forming a groove serving as the pressure chamber on one surface of a substrate made of silicon or glass; and forming a step at a corner around the groove; An opening serving as a communication path to the pressure chamber is formed on the other surface of the substrate by filling the groove portion and the step portion with a filler, forming the diaphragm and the piezoelectric element on one surface of the substrate. After the filler is exposed to form an etching solution, an etching solution is supplied to the opening to remove the filler.

  According to the first aspect of the present invention, a groove is formed on one surface of the substrate, and a step is formed at a corner around the groove. In this way, by forming the pressure chamber in two stages, the wet etching time is shortened, so that the accuracy of the opening dimension can be ensured.

  Further, after filling the groove portion and the step portion with the filler, the diaphragm and the piezoelectric element are formed on one surface of the substrate. As a result, the diaphragm can be formed with high accuracy and at low cost, and handling properties are better than when the diaphragm is bonded onto the substrate.

  Then, an opening serving as a communication path is formed by etching on the other surface of the substrate, an etching solution is supplied from the opening, and the filler is removed, whereby the droplet discharge head is manufactured.

  According to a second aspect of the present invention, there is provided a pressure chamber that is in communication with a nozzle that discharges droplets and is filled with a liquid, a diaphragm that forms part of the pressure chamber, and a piezoelectric element that displaces the diaphragm. A method for manufacturing a droplet discharge head, comprising: forming a groove serving as the pressure chamber on one surface of a substrate made of silicon or glass; and forming a step at a corner around the groove; Filling the groove and the step with a filler, forming the diaphragm on one surface of the substrate, and forming an opening on the other surface of the substrate that serves as a communication path to the pressure chamber. After the filler is exposed, the piezoelectric element is formed on the diaphragm, and an etchant is supplied to the opening to remove the filler.

  In the second aspect of the present invention, a groove is formed on one surface of the substrate, and a step is formed at a corner around the groove. Then, a filler is embedded in the groove and step, a diaphragm is formed on one surface of the substrate, an opening serving as a communication path is formed on the other surface of the substrate, and a piezoelectric element is formed on the diaphragm. Is deposited. Then, the droplet discharge head is manufactured by supplying the etching solution from the opening and removing the filler.

  According to a third aspect of the present invention, there is provided a pressure chamber that is in communication with a nozzle that discharges droplets and is filled with a liquid, a diaphragm that forms part of the pressure chamber, and a piezoelectric element that displaces the diaphragm. A method for manufacturing a droplet discharge head, comprising: forming a groove serving as the pressure chamber on one surface of a substrate made of silicon or glass; and forming a step at a corner around the groove; Filling the groove and the step with a filler, forming the diaphragm and the piezoelectric element on one surface of the substrate, polishing the other surface of the substrate to a predetermined thickness, An opening serving as a communication path to the pressure chamber is formed on the other surface, and after exposing the filler, an etching solution is supplied to the opening to remove the filler. .

  In the third aspect of the present invention, a groove and a step are formed on one surface of the substrate, a filler is embedded in the groove and the step, and a diaphragm and a piezoelectric element are formed on one surface of the substrate. In a later step, the other surface of the substrate is polished to make the substrate have a predetermined thickness. In other words, since the groove portion and the step portion serving as the pressure chambers are formed on the substrate having a sufficient thickness, the handling property and workability of the substrate are better than when the substrate is handled in a state where the substrate is thinned to a predetermined thickness from the beginning. .

  According to a fourth aspect of the present invention, there is provided a pressure chamber that is in communication with a nozzle that discharges droplets and is filled with a liquid, a diaphragm that forms part of the pressure chamber, and a piezoelectric element that displaces the diaphragm. A method for manufacturing a droplet discharge head, comprising: forming a groove serving as the pressure chamber on one surface of a substrate made of silicon or glass; and forming a step at a corner around the groove; A protective layer is formed on the groove and the step, and a filler is embedded in the groove and the step, and then the diaphragm and the piezoelectric element are formed on one surface of the substrate. An opening that serves as a communication path to the pressure chamber is formed on the other surface to expose the filler, and then an etchant is supplied to the opening to remove the filler. Yes.

  In the invention described in claim 4, the protective material is deposited before the filler is embedded in the groove and step. Thus, for example, even when polysilicon is embedded in the groove and step of the substrate made of silicon, that is, even when both the filler and the substrate embedded in the groove and step are made of silicon, the etching solution is supplied from the opening. When supplied, only the filler (polysilicon embedded in the groove and step) is removed by etching, and the substrate is not etched.

  Since the present invention has the above configuration, the chamber can be processed with high accuracy by wet etching.

  DESCRIPTION OF THE PREFERRED EMBODIMENTS The best mode for carrying out the present invention will be described below in detail based on the embodiments shown in the drawings. Note that the ink jet recording apparatus 10 will be described as an example of the droplet discharge apparatus. Therefore, the liquid will be described as ink 110, and the droplet discharge head will be described as an inkjet recording head 32. The recording medium will be described as recording paper P.

  As shown in FIG. 1, the inkjet recording apparatus 10 includes a paper supply unit 12 that feeds the recording paper P, a registration adjustment unit 14 that controls the posture of the recording paper P, and forms an image on the recording paper P by ejecting ink droplets. The recording head unit 16 and the recording unit 20 including the maintenance unit 18 that performs maintenance of the recording head unit 16 and the discharge unit 22 that discharges the recording paper P on which the image is formed by the recording unit 20 are basically configured. .

  The paper supply unit 12 includes a stocker 24 in which recording papers P are stacked and stocked, and a conveying device 26 that takes out the papers one by one from the stocker 24 and conveys them to the registration adjusting unit 14. The registration adjusting unit 14 includes a loop forming unit 28 and a guide member 29 that controls the posture of the recording paper P. The recording paper P passes through this portion, and uses the stiffness to skew. Is corrected, and the conveyance timing is controlled and supplied to the recording unit 20. The discharge unit 22 stores the recording paper P on which the image is formed by the recording unit 20 in the tray 25 via the discharge belt 23.

  Between the recording head unit 16 and the maintenance unit 18, a paper transport path 27 through which the recording paper P is transported is formed (the paper transport direction is indicated by an arrow PF). The paper conveyance path 27 includes a star wheel 17 and a conveyance roll 19, and conveys the recording paper P between the star wheel 17 and the conveyance roll 19 continuously (without stopping). Then, ink droplets are ejected from the recording head unit 16 to the recording paper P, and an image is formed on the recording paper P.

  The maintenance unit 18 includes a maintenance device 21 disposed to face the ink jet recording unit 30, and performs capping and wiping on the ink jet recording head 32, and further processes such as dummy jet and vacuum.

  As shown in FIG. 2, each inkjet recording unit 30 includes a support member 34 disposed in a direction orthogonal to the paper conveyance direction indicated by arrow PF, and a plurality of inkjet recording heads 32 are attached to the support member 34. It has been. A plurality of nozzles 56 are formed in a matrix in the inkjet recording head 32, and the nozzles 56 are arranged in parallel in the width direction of the recording paper P at a constant pitch as the entire inkjet recording unit 30.

  An image is recorded on the recording paper P by ejecting ink droplets from the nozzles 56 onto the recording paper P that is continuously transported through the paper transporting path 27. For example, in order to record a so-called full-color image, at least four inkjet recording units 30 are arranged corresponding to each color of yellow (Y), magenta (M), cyan (C), and black (K). Has been.

  As shown in FIG. 3, the print area width by the nozzle 56 of each inkjet recording unit 30 is longer than the maximum sheet width PW of the recording sheet P on which image recording by the inkjet recording apparatus 10 is assumed, Image recording over the entire width of the recording paper P is possible without moving the inkjet recording unit 30 in the paper width direction. That is, the inkjet recording unit 30 is a full width array (FWA) capable of single pass printing.

  Here, the print area width is basically the largest of the recording areas obtained by subtracting the margins not to be printed from both ends of the recording paper P, but is generally larger than the maximum paper width PW to be printed. ing. This is because there is a possibility that the recording paper P is conveyed at a predetermined angle with respect to the conveying direction (skewed) and there is a high demand for borderless printing.

  Next, the inkjet recording head 32 in the inkjet recording apparatus 10 configured as described above will be described in detail. FIG. 4 is a schematic plan view showing the configuration of the ink jet recording head 32 of the first embodiment. 4A shows the overall configuration of the inkjet recording head 32, and FIG. 4B shows the configuration of one element.

  FIGS. 5A to 5C show sections of FIG. 4B in cross sections taken along lines A-A ′, B-B ′, and C-C ′, respectively. However, a glass substrate 72 and a pool chamber member 39 which will be described later are omitted. FIG. 6 is a schematic longitudinal sectional view showing the ink jet recording head 32 partially taken out so that the main part becomes clear.

  A top plate member 40 is disposed on the ink jet recording head 32. In the present embodiment, the glass top plate 41 constituting the top plate member 40 is plate-shaped and has wiring, which is the top plate of the entire inkjet recording head 32. The top plate member 40 is provided with a driving IC 60 and a metal wiring 90 for energizing the driving IC 60. The metal wiring 90 is covered and protected by a resin protective film 92 so that erosion by the ink 110 is prevented.

  Further, as shown in FIG. 7, a plurality of bumps 60 </ b> B project in a matrix shape at a predetermined height on the lower surface of the drive IC 60, and the metal on the top plate 41 and outside the pool chamber member 39. The wiring 90 is flip-chip mounted. Therefore, it is possible to easily realize high-density wiring and low resistance for the piezoelectric element 46, and thus, the ink jet recording head 32 can be miniaturized. The periphery of the drive IC 60 is sealed with a resin material 58.

  A pool chamber member 39 made of a material having ink resistance is attached to the top plate member 40, and an ink pool chamber 38 having a predetermined shape and volume is formed between the top plate member 40 and the top plate member 40. ing. An ink supply port 36 communicating with an ink tank (not shown) is formed in the pool chamber member 39 at a predetermined location, and the ink 110 injected from the ink supply port 36 is stored in the ink pool chamber 38. .

  The top plate 41 is formed with an ink supply through-hole 112 that corresponds one-to-one with a pressure chamber 115 to be described later, and the inside thereof is a first ink supply path 114A. The top plate 41 has an electrical connection through hole 42 at a position corresponding to an upper electrode 54 described later. The metal wiring 90 of the top plate 41 extends into the electrical connection through hole 42, covers the inner surface of the electrical connection through hole 42, and is in contact with the upper electrode 54.

  Thereby, the metal wiring 90 and the upper electrode 54 are electrically connected, and the individual wiring of the piezoelectric element substrate 70 described later is unnecessary. The lower part of the electrical connection through hole 42 is a bottom 42B (see FIG. 11B) closed by the metal wiring 90, and the electrical connection through hole 42 is opened only upward. Is a closed space.

  A pressure chamber 115 filled with the ink 110 supplied from the ink pool chamber 38 is formed on the glass substrate 72 as the flow path substrate, and ink droplets are ejected from the nozzle 56 communicating with the pressure chamber 115 through the communication path 50. It has become so. The ink pool chamber 38 and the pressure chamber 115 are configured not to exist on the same horizontal plane. Therefore, the pressure chambers 115 can be arranged close to each other, and the nozzles 56 can be arranged in a matrix at high density.

  A nozzle plate 74 in which the nozzles 56 are formed is attached to the lower surface of the glass substrate 72, and a piezoelectric element substrate 70 is formed (produced) on the upper surface of the glass substrate 72. The piezoelectric element substrate 70 has a vibration plate 48. By generating a pressure wave by increasing / decreasing the volume of the pressure chamber 115 by the vibration of the vibration plate 48, ink droplets can be ejected from the nozzle 56. Yes. Therefore, the diaphragm 48 forms one surface of the pressure chamber 115.

  The piezoelectric element 46 is bonded to the upper surface of the diaphragm 48 for each pressure chamber 115. The diaphragm 48 is a SiOx film formed by a Chemical Vapor Deposition (CVD) method, and has elasticity in at least the vertical direction. When the piezoelectric element 46 is energized (when a voltage is applied), the diaphragm 48 is in the vertical direction. It is configured to bend (deform). The diaphragm 48 may be a metal material such as Cr.

  A lower electrode 52 having one polarity is disposed on the lower surface of the piezoelectric element 46, and an upper electrode 54 having the other polarity is disposed on the upper surface of the piezoelectric element 46. The piezoelectric element 46 is covered and protected by a low water-permeable insulating film (SiOx film) 80. Since the low water-permeable insulating film (SiOx film) 80 that covers and protects the piezoelectric element 46 is deposited under the condition that the moisture permeability is low, moisture penetrates into the piezoelectric element 46 and becomes unreliable. (Deterioration of piezoelectric characteristics caused by reducing oxygen in the PZT film) can be prevented.

  Further, a partition resin layer 119 is laminated on the low water-permeable insulating film (SiOx film) 80. As shown in FIG. 4B, the partition resin layer 119 partitions the space between the piezoelectric element substrate 70 and the top plate member 40. The partition resin layer 119 is formed with an ink supply through-hole 44 that communicates with the ink supply through-hole 112 of the top plate 41, and the inside thereof is a second ink supply path 114 </ b> B.

  The second ink supply path 114B has a cross-sectional area smaller than the cross-sectional area of the first ink supply path 114A, and is adjusted so that the flow path resistance in the entire ink supply path 114 becomes a predetermined value. . That is, the cross-sectional area of the first ink supply path 114A is sufficiently larger than the cross-sectional area of the second ink supply path 114B, and can be substantially ignored as compared with the flow path resistance in the second ink supply path 114B. It is said to be about. Therefore, the flow resistance of the ink supply path 114 from the ink pool chamber 38 to the pressure chamber 115 is defined only by the second ink supply path 114B.

  In addition, since the ink 110 is supplied through the ink supply through-hole 44 formed in the partition resin layer 119 as described above, ink leakage to the piezoelectric element 46 region during supply is prevented. An air communication hole 116 is formed in the partition resin layer 119 to reduce pressure fluctuations in the space between the top plate 41 and the piezoelectric element substrate 70 when the inkjet recording head 32 is manufactured or when an image is recorded.

  A partition resin layer 118 is also laminated at a position corresponding to the electrical connection through hole 42. As shown in FIG. 4B, a through hole 120 through which the metal wiring 90 penetrates is formed in the partition resin layer 118 so that the lower end of the metal wiring 90 can contact the upper electrode 54. In FIG. 4B, a cross section is taken at a position where the partition resin layer 118 and the partition resin layer 119 are separated, but these are actually partially connected.

  In addition, the partition resin layers 118 and 119 form a gap between the top plate member 40 and the piezoelectric element 46 (strictly, the low water-permeable insulating film (SiOx film) 80 on the piezoelectric element 46), and the air layer It has become. The air layer prevents the drive of the piezoelectric element 46 and the vibration of the diaphragm 48 from being affected.

  The inside of the electrical connection through hole 42 is filled with solder 86 so as to be in contact with the metal wiring 90. Thereby, the metal wiring 90 is substantially reinforced, and the contact state (electrical connection state) with respect to the upper electrode 54 is improved. For example, the contact state is likely to be lowered due to thermal stress or mechanical stress. Even in this case, the contact state is maintained well by the solder 86.

  Therefore, a signal from the driving IC 60 is energized to the metal wiring 90 of the top plate member 40 and further energized from the metal wiring 90 to the upper electrode 54. Then, a voltage is applied to the piezoelectric element 46 at a predetermined timing, and the vibration plate 48 is bent and deformed in the vertical direction, whereby the ink 110 filled in the pressure chamber 115 is pressurized and ink droplets are ejected from the nozzle 56. Discharge.

  Note that the partition wall resin layer 119 and the partition wall resin layer 118 are configured such that the heights of the upper surfaces thereof are constant, that is, flush with each other. Therefore, the height (distance) of the opposing surfaces of the partition resin layer 119 and the partition resin layer 118 measured from the top plate 41 is also the same. Thereby, the contact property at the time of the top plate 41 contacting becomes high, and the sealing performance is also high. A flexible printed circuit board (FPC) 100 is also connected to the metal wiring 90.

  A schematic configuration of the inkjet recording head 32 having the above-described configuration will be described with reference to FIG.

  The inkjet recording head 32 is formed by laminating a piezoelectric element and a glass substrate (a glass top plate 41) on the upper surface of a flow path substrate made of a glass substrate 72 (see FIG. 6), and then a nozzle film on the lower surface of the flow path substrate. Are joined (attached) and a pool chamber is formed on the opposite side.

  Here, the manufacturing method of the flow path substrate will be described in detail.

  As shown in FIG. 9A, first, a glass substrate 72 having a thickness of 0.5 mm is prepared. Then, as shown in FIG. 9-1 (B), a groove portion 72A having a depth of 0.1 mm is formed in a region serving as a pressure chamber of the glass substrate 72 by wet etching. The depth of the groove 72A is not necessarily 0.1 mm, but it is desirable to form it between 0.05 mm and 0.1 mm in consideration of the flow resistance of the ink in the pressure chamber.

  Next, as shown in FIG. 9-1 (C), a step portion 72B having a depth of 0.03 m is formed around the groove portion 72A by wet etching. When the stepped portion 72B is formed by wet etching, the groove portion 72A is also etched, so the depth of the groove portion 72A is 0.13 mm.

  Thus, the pressure chamber has a multi-stage structure (in this embodiment, a two-stage structure), so that the accuracy of the opening dimension is ensured even if the pressure chamber is formed by wet etching.

  The depth of the stepped portion 72B is 0.03 mm or less. Thereby, even if the stepped portion 72B is formed by wet etching, the etching time is short and the dimensional accuracy of the stepped portion 72B is ensured. Further, the difference between the width of the groove 72A and the width of the stepped portion 72B should not exceed twice the depth of the stepped portion 72B. Accordingly, the stepped portion 72B does not become a bubble pool of bubbles generated from the ink in the pressure chamber.

  Thereafter, as shown in FIG. 9D, the trenches 72A and the stepped portions 72B are filled (embedded) with polysilicon 76 by screen printing.

  After the polysilicon 76 is filled, the upper surface (surface) of the glass substrate 72 is polished to remove excess polysilicon 76, and the upper surface (surface) is flattened. As a result, a thin film or the like can be formed with high precision on the region to be the pressure chamber.

  Next, as shown in FIG. 9-2 (E), a germanium (Ge) film 78 (film thickness: 1 μm) is deposited on the upper surface (surface) of the glass substrate 72 by sputtering. The Ge film 78 functions as an etching stopper layer that protects a later-described SiOx film 82 (vibrating plate 48) from being etched together when the polysilicon 76 is etched away with a KOH solution or a TMAH solution. . The Ge film 78 can also be formed by vapor deposition or CVD. A silicon (Si) film can also be used as the etching stopper layer.

Then, as shown in FIG. 9-2 (F), a thin film that becomes the vibration plate 48 on the upper surface of the Ge film 78, for example, temperature 350 ° C., RF power 300 W, frequency 450 KHz, pressure 1.5 torr, gas SiH ₄ / N _2. A SiOx film 82 (film thickness: 4 μm) is formed by plasma CVD with O = 150/4000 sccm. In this case, the material of the diaphragm 48 may be a SiNx film, a SiC film, a metal (Cr) film, or the like.

  Thereafter, as shown in FIG. 9-2 (G), an Au film 62 having a thickness of, for example, about 0.5 μm, that is, the lower electrode 52 is formed by sputtering. Then, as shown in FIG. 9-3 (H), the lower electrode 52 stacked on the upper surface of the diaphragm 48 is patterned. Specifically, resist formation by photolithography, patterning, etching by RIE, and resist removal by oxygen plasma. This lower electrode 52 becomes the ground potential.

  Next, as shown in FIG. 9-3 (I), a PZT film 64 that is a material of the piezoelectric element 46 and an Au film 66 that becomes the upper electrode 54 are sequentially laminated on the upper surface of the lower electrode 52 by sputtering. As shown in FIG. 9-3 (J), the piezoelectric element 46 (PZT film 64) and the upper electrode 54 (Au film 66) are patterned.

  Specifically, PZT film sputtering (film thickness 5 μm), Au film sputtering (film thickness 0.5 μm), resist formation by photolithography, patterning (etching), and resist stripping by oxygen plasma. Examples of the lower and upper electrode materials include Au, Ir, Ru, and Pt that have high affinity with the PZT material that is the piezoelectric element 46 and heat resistance.

  Thereafter, as shown in FIG. 9-4 (K), the hole 82A for forming the ink supply path 114 is patterned in the diaphragm 48 (SiOx film 82) and the Ge film 78. Specifically, resist formation by photolithography, patterning (HF etching), and resist removal by oxygen plasma.

  Next, as shown in FIG. 9-4 (L), a low water permeable insulating film (SiOx film) 80 is laminated on the upper surface of the lower electrode 52 and the upper electrode 54 exposed on the upper surface. Then, an opening 84 (contact hole) for connecting the upper electrode 54 and the metal wiring 90 is formed by patterning.

  Specifically, a low water-permeable insulating film (SiOx film) 80 having a high dangling bond density by CVD is deposited, resist formation by photolithography, patterning (HF etching), and resist stripping by oxygen plasma. . Although the SiOx film is used here as the low water permeable insulating film, it may be a SiNx film, a SiOxNy film, or the like.

  Next, as shown in FIG. 9-4 (M), the partition resin layer 119 and the partition resin layer 118 are patterned. Specifically, a photosensitive resin constituting the partition wall resin layer 119 and the partition wall resin layer 118 is applied, exposed to light and developed to form a pattern, and finally cured. At this time, the ink supply through hole 44 is formed in the partition wall resin layer 119.

  The partition resin layer 119 and the partition resin layer 118 are the same film, but have different design patterns. In addition, the photosensitive resin constituting the partition resin layer 119 and the partition resin layer 118 may have ink resistance such as polyimide, polyamide, epoxy, polyurethane, and silicone.

  Thus, the piezoelectric element substrate 70 is manufactured on the upper surface of the glass substrate 72 (flow path substrate), and the top plate member 40 using, for example, a glass plate as a support is bonded (bonded) to the upper surface of the piezoelectric element substrate 70. In the manufacture of the top plate member 40, as shown in FIG. 10A, a top plate 41 having a thickness (0.3 mm to 1.5 mm) that can secure a strength that allows the top plate member 40 itself to be a support. Since it contains, it is not necessary to provide a separate support body. As shown in FIG. 10B, the ink supply through-hole 112 and the electrical connection through-hole 42 are formed in the top plate 41.

  Specifically, a photosensitive dry film resist is patterned by a photolithography method, and an opening is formed by performing sand blasting using the resist as a mask, and then the resist is peeled off by oxygen plasma. The ink supply through-hole 112 and the electrical connection through-hole 42 are formed in a tapered shape (funnel shape) such that the inner surface gradually approaches downward in a cross-sectional view.

As shown in FIG. 11A, the top plate 41 (top plate member 40) in which the ink supply through-hole 112 and the electrical connection through-hole 42 are thus formed is covered with the piezoelectric element substrate 70. Then, they are bonded (joined) by thermocompression bonding (for example, 350 ° C., 2 kg / cm ² for 20 minutes). At this time, since the partition wall resin layer 119 and the partition wall resin layer 118 are configured to be flush with each other (same height), the contactability when the top plate 41 comes into contact is increased, and the sealing resin is bonded with high sealing performance. can do.

Then, as shown in FIG. 11B, metal wiring 90 is formed on the top surface of the top plate 41 and patterned. Specifically, deposition of an Al film (thickness 1 μm) by sputtering, formation of a resist by photolithography, wet etching of an Al film using an H ₃ PO ₄ chemical solution, and resist stripping by oxygen plasma.

  In addition, since the level difference of the electrical connection through hole 42 is very large, a resist spray coating method and a long focal depth exposure method are used in the photolithography process. At this time, the metal wiring 90 is patterned so that a part of the metal wiring 90 reaches the upper electrode 54 from the inner surface of the through hole 42 for electrical connection.

  As a result, the bottom portion 42B of the electrical connection through hole 42 is closed by the metal wiring 90, and the electrical connection through hole 42 is a closed space except that it is opened only upward. When the metal wiring 90 is desired to be thickly formed up to the deep part of the electrical connection through hole 42, a CVD method having better step coverage than the sputtering method may be employed.

  Then, as shown in FIG. 11-2 (C), the solder 86 is mounted in the electrical connection through hole 42 (in the space) in which the metal wiring 90 is patterned in this way. As this method, a solder ball method in which the solder ball 86B is directly mounted in the electrical connection through hole 42 can be used.

  In addition to the solder ball method, as shown in FIG. 13A, a heated and melted solder discharge supply method applying the principle of ink jet may be used. In this method, the solder 86 can be supplied to a predetermined position without contact with the top plate 41 and without using a mask. Further, as shown in FIG. 13B, the solder 86 may be supplied using a screen printing method. In any supply method, the electrical connection through-hole 42 is formed in a taper shape (funnel shape) so that the inner surface gradually approaches downward in a cross-sectional view, so that the solder 86 is used for electrical connection. It tends to adhere to the inner surface of the through hole 42.

  Next, as shown in FIG. 11-2 (D), the solder 86 is reflowed (for example, at 280 ° C. for 10 minutes) and spreads to the bottom 42B of the through hole 42 for electrical connection. At this time, there is no path for the molten solder 86 to flow out at the bottom 42B of the electrical connection through hole 42. Therefore, the solder 86 is sufficiently melted in a high-temperature environment to reach the bottom 42B of the electrical connection through hole 42. It can be filled reliably.

  That is, at this stage, the lowermost part of the solder 86 is located in the electrical connection through hole 42 below the lower surface of the top plate 41 (the surface where the metal wiring 90 is not formed). The metal wiring 90 in the through hole 42 is surely contacted. At this stage, the amount of solder 86 to be filled is determined in advance so that the melted solder 86 is not positioned above the upper surface of the top plate 41 (strictly, the upper surface of the metal wiring 90). ing.

  Here, at the bottom portion of the metal wiring 90, that is, the portion in contact with the upper electrode 54, the Al film constituting the metal wiring 90 may be thin, and mechanical stress is caused by thermal expansion of the partition resin layer 119. In response, the metal wiring 90 may be disconnected. However, even in such a case, since the solder 86 filled in the bottom portion 42B connects the bottom portion 42B and the metal wiring 90 in the electrical connection through hole 42, conduction by the solder 86 can be ensured. Further, since the molten solder 86 does not flow out, there is no possibility that the solder 86 will inadvertently short-circuit the vicinity of the electrical connection through hole 42.

  Next, as shown in FIG. 11-3 (E), a resin protective film 92 (for example, photosensitive polyimide Durimide 7320 manufactured by Fuji Film Arch Co., Ltd.) is laminated and patterned on the surface on which the metal wiring 90 is formed. At this time, the resin protective film 92 is not covered with the first ink supply path 114A. The resin protective film 92 only needs to have ink resistance such as polyimide, polyamide, epoxy, polyurethane, and silicone.

  Next, as shown in FIG. 11-3 (F), an anti-HF protection resist 88 is applied to the upper surface of the resin protective film 92 and the ink supply path 114.

  Next, as shown in FIG. 11-4 (G), the lower surface of the glass substrate 72 is polished to make the thickness of the glass substrate 72 0.3 mm. Thus, in the process after providing the diaphragm 48 etc. on the glass substrate 72, by making the glass substrate 72 a desired thickness, compared with the case where the thin glass substrate 72 is used in the first process, In addition to improving the handling properties, it is difficult to cause displacement when the diaphragm 48 and the like are provided on the glass substrate 72 on which the groove 72A and the stepped portion 72B are formed.

  Then, as shown in FIG. 11-4 (H), an opening 77 serving as a communication path is formed from the lower surface of the glass substrate 72 by wet etching. Although the opening 77 is formed here by wet etching, the opening 77 may be formed by sandblasting or the like.

  Next, as shown in FIG. 11-5 (I), the polysilicon 76 filled (embedded) in the glass substrate 72 is selectively etched away with a KOH solution or a TMAH solution. At this time, the diaphragm 48 made of the SiOx film 82 is not etched because it is protected from the HF solution by the Ge film 78. That is, as described above, the Ge film 78 is etched to prevent the diaphragm 48 made of the SiOx film 82 from being etched away together when the polysilicon 76 is etched away with the KOH solution or the TMAH solution. Functions as a stopper layer. At this stage, the pressure chamber and the communication path are completed.

  Thereafter, as shown in FIG. 11-5 (J), the HF-resistant resist 88 is removed with acetone.

  Next, a nozzle plate 74 is attached to the lower surface of the glass substrate 72. That is, as shown in FIG. 12A, a nozzle film 68 in which an opening 68 </ b> A that becomes the nozzle 56 is formed is attached to the lower surface of the glass substrate 72. After that, as shown in FIG. 12A, the driving IC 60 is flip-chip mounted on the metal wiring 90. At this time, the drive IC 60 is processed to a predetermined thickness (70 μm to 300 μm) in a grinding process performed in advance at the end of the semiconductor wafer process.

  Then, the periphery of the drive IC 60 is sealed with a resin material 58 so that the drive IC 60 can be protected from an external environment such as moisture. Thereby, damage in a subsequent process, for example, damage caused by water or a grinding piece when the completed piezoelectric element substrate 70 is divided into the ink jet recording head 32 by dicing can be avoided. Then, as shown in FIG. 12-2 (C), a flexible printed circuit board (FPC) 100 is connected to the metal wiring 90.

  Next, as shown in FIG. 12D, a pool chamber member 39 is mounted on the top surface of the top plate member 40 (top plate 41) inside the drive IC 60, and the ink pool chamber 38 is interposed therebetween. Configure. Thereby, the ink jet recording head 32 is completed, and the ink 110 can be filled into the ink pool chamber 38 and the pressure chamber as shown in FIG.

  Next, the operation of the inkjet recording apparatus 10 including the inkjet recording head 32 manufactured as described above will be described.

  First, when an electrical signal for instructing printing is sent to the inkjet recording apparatus 10, one sheet of recording paper P is picked up from the stocker 24 and conveyed by the conveying device 26.

  On the other hand, in the ink jet recording unit 30, the ink 110 has already been injected (filled) from the ink tank into the ink pool chamber 38 of the ink jet recording head 32 via the ink supply port. The pressure chamber 115 is supplied (filled) through the supply path 114. At this time, a meniscus in which the surface of the ink 110 is slightly recessed toward the pressure chamber 115 is formed at the tip (ejection port) of the nozzle 56.

  A part of the image based on the image data is recorded on the recording paper P by selectively ejecting ink droplets from the plurality of nozzles 56 while conveying the recording paper P. That is, a voltage is applied to a predetermined piezoelectric element 46 by a driving IC 60 at a predetermined timing, and the vibration plate 48 is bent and deformed in the vertical direction (vibrated out of plane) to apply the ink 110 in the pressure chamber 115. And ejected as ink droplets from a predetermined nozzle 56.

  Thus, when the image based on the image data is completely recorded on the recording paper P, the recording paper P is discharged onto the tray 25 by the paper discharge belt 23. Thereby, the printing process (image recording) on the recording paper P is completed. In the manufacturing process of the ink jet recording head 32, first, a groove 72A is formed as a part of the pressure chamber 115 on the glass substrate 72 where the pressure chamber 115 is formed, and the groove 72A is formed around the groove 72A. To do. That is, since the pressure chamber 115 is formed in two stages, it is not necessary to form the groove 72A with high accuracy if the accuracy of the stepped portion 72B that supports the glass substrate 72 is maintained. Thus, the pressure chamber 115 can be formed.

  Moreover, the diaphragm 48 can be formed with high accuracy and low cost by forming the glass substrate 72 after embedding polysilicon in the groove 72A and the stepped portion 72B.

  Furthermore, since the glass substrate 72 is polished to a predetermined thickness in the step after the diaphragm 48 and the piezoelectric element 46 are formed on the glass substrate 72, the glass substrate 72 having a sufficient thickness can be handled. Excellent workability.

  Next, the ink jet recording head 32 of the second embodiment will be described. In the following description, the same components, members, and the like as those of the ink jet recording head 32 of the first embodiment are denoted by the same reference numerals, and detailed description thereof (including operation) is omitted. In the ink jet recording head 32 of the second embodiment, only a manufacturing method (manufacturing process) different from that of the ink jet recording head 32 of the first embodiment will be described in detail with reference to FIG.

  As shown in FIG. 14A, first, a silicon substrate 72 having a thickness of 0.3 mm is prepared. The plane orientation of the silicon substrate 72 is (110). Then, as shown in FIG. 14B, a groove portion 72A having a depth of 0.1 m is formed in a region serving as a pressure chamber of the silicon substrate 72 by wet etching.

  Next, as shown in FIG. 14C, a stepped portion 72B having a depth of 0.03 m is formed around the groove portion 72A by wet etching. When the stepped portion 72B is formed by wet etching, the groove portion 72A is also etched, so the depth of the groove portion 72A is 0.13 mm.

  Thus, the pressure chamber has a multi-stage structure (in this embodiment, a two-stage structure), so that the accuracy of the opening dimension is ensured even if the pressure chamber is formed by wet etching.

  The depth of the stepped portion 72B is 0.03 mm or less. Thereby, even if the stepped portion 72B is formed by wet etching, the dimensional accuracy of the stepped portion 72B is ensured. Further, the difference between the width of the groove 72A and the width of the stepped portion 72B should not exceed twice the depth of the stepped portion 72B. Accordingly, the stepped portion 72B does not become a bubble pool of bubbles generated from the ink in the pressure chamber.

Thereafter, as shown in FIG. 14-2 (D), the paste glass 76 is filled (embedded) into the groove 72A and the stepped portion 72B by a screen printing method. This paste glass 76 has a thermal expansion coefficient of 1 × 10 ⁻⁶ / ° C. to 6 × 10 ⁻⁶ / ° C. and a softening point of 550 ° C. to 900 ° C. By using the paste glass 76 in this range, it is possible to prevent the paste glass 76 from being cracked or peeled off, and further to prevent the piezoelectric thin film serving as the piezoelectric element 46 or the diaphragm 48 from being deformed. .

  Then, after filling the paste glass 76, the silicon substrate 72 is heat-treated at, for example, 800 ° C. for 10 minutes. The temperature used for the curing heat treatment of the paste glass 76 is higher than the film formation temperature (for example, 350 ° C.) of the piezoelectric element 46 and the diaphragm 48 described later. Thereby, the paste glass 76 can be resistant to high temperatures in the film forming process of the diaphragm 48 and the piezoelectric element 46. That is, at least up to the temperature at which the paste glass 76 is hardened and heat treated, it can be used in the subsequent process, and thus the allowable range of the use temperature in the subsequent process is widened.

  Here, the paste glass 76 has been described as an example of the member filling the groove 72A and the stepped portion 72B serving as the pressure chambers. However, as a member filling the groove 72A and the stepped portion 72B, OCD (water glass) or the like is used. It can also be used.

  Then, after filling the paste glass 76, the upper surface (surface) of the silicon substrate 72 is polished to remove the excess paste glass 76, and the upper surface (surface) is flattened. As a result, a thin film or the like can be formed with high precision on the region to be the pressure chamber.

  Next, as shown in FIG. 9B, a germanium (Ge) film 78 (film thickness: 1 μm) is deposited on the upper surface (surface) of the silicon substrate 72 by sputtering. Then, a SiOx film 82 (film thickness: 4 μm) that becomes the vibration plate 48 is formed on the upper surface of the Ge film 78.

  The Ge film 78 functions as an etching stopper layer that protects the SiOx film 82 (vibrating plate 48) from being etched together when the paste glass 76 is etched away with a hydrogen fluoride (HF) solution in a later step. The Ge film 78 can also be formed by vapor deposition or CVD. A silicon (Si) film can also be used as the etching stopper layer.

  Then, as shown in FIG. 14-3 (F), an opening 77 serving as a communication path is formed from the lower surface of the silicon substrate 72 by wet etching. At this stage, the communication path is completed. Although the opening 77 is formed here by wet etching, the opening 77 may be formed by sandblasting or the like.

  The subsequent steps are the same as those in the case of the ink jet recording head 32 of the first embodiment. That is, since FIG. 9-2 (G) to FIG. 11-4 (H) are the same as the above, description thereof is omitted.

  Next, as shown in FIG. 14-3 (G), an anti-HF protection resist 88 is applied to the upper surface of the resin protective film 92 and the ink supply path 114. Then, a solution containing HF is supplied from the opening 77, and the paste glass 76 filled (embedded) in the silicon substrate 72 is removed by etching as shown in FIG. At this time, the diaphragm 48 made of the SiOx film 82 is not etched because it is protected from the HF solution by the Ge film 78. That is, as described above, the Ge film 78 serves as an etching stopper layer that prevents the vibration plate 48 made of the SiOx film 82 from being etched away together when the paste glass 76 is etched away with the HF solution. Function.

  In addition, although the liquid containing HF was used for the removal of the paste glass 76 here, you may use the gas and vapor | steam containing HF for the removal of the paste glass 76. When the etching solution is supplied from a narrow inlet, bubbles generated when the material to be etched (in this case, paste glass 76) is etched cannot be removed, or replacement with a new etching solution cannot be performed. Progression may be inhibited. When gas or steam is used, such a problem does not occur. In such a case, it is preferable to use gas or steam.

  The subsequent steps are the same as those in the case of the ink jet recording head 32 of the first embodiment. That is, since FIGS. 12-1 (A) to 12-2 (D) are similar to the above, the description thereof is omitted.

  Next, the ink jet recording head 32 of the third embodiment will be described. In the following description, the same components, members, and the like as those of the ink jet recording head 32 of the first embodiment are denoted by the same reference numerals, and detailed description thereof (including operation) is omitted. In the inkjet recording head 32 of the second embodiment, only a manufacturing method (manufacturing process) different from that of the inkjet recording head 32 of the first embodiment will be described in detail with reference to FIG.

  As shown in FIG. 15A, first, a silicon substrate 72 having a thickness of 0.5 mm is prepared. The plane orientation of the silicon substrate 72 is (110). Then, as shown in FIG. 15-1 (B), a groove portion 72A having a depth of 0.1 m is formed in a region serving as a pressure chamber of the silicon substrate 72 by wet etching.

  Next, as shown in FIG. 15C, a step portion 72B having a depth of 0.03 m is formed around the groove portion 72A by wet etching. When the stepped portion 72B is formed by wet etching, the groove portion 72A is also etched, so the depth of the groove portion 72A is 0.13 mm.

  Thus, the pressure chamber has a multi-stage structure (in this embodiment, a two-stage structure), so that the accuracy of the opening dimension is ensured even if the pressure chamber is formed by wet etching.

  The depth of the stepped portion 72B is 0.03 mm or less. Thereby, even if the stepped portion 72B is formed by wet etching, the dimensional accuracy of the stepped portion 72B is ensured. Further, the difference between the width of the groove 72A and the width of the stepped portion 72B should not exceed twice the depth of the stepped portion 72B. Accordingly, the stepped portion 72B does not become a bubble pool of bubbles generated from the ink in the pressure chamber.

  Next, as shown in FIG. 15-2 (D), SiN 79 is coated by plasma CVD over the upper surface of the silicon substrate 72 and the groove 72A and the stepped portion 72B.

  Thereafter, as shown in FIG. 15-2 (E), polysilicon 76 is filled (embedded) into the groove 72A and the stepped portion 72B covered with SiN 79 by screen printing.

  After the polysilicon 76 is filled, the upper surface (surface) of the silicon substrate 72 is polished to remove excess polysilicon 76, and the upper surface (surface) is flattened. As a result, a thin film or the like can be formed with high precision on the region to be the pressure chamber. Note that when the upper surface of the silicon substrate 72 is polished, the SiN 79 coated on the surface of the silicon substrate 72 is also polished.

  Next, as shown in FIG. 15-2 (F), a SiOx film 82 (film thickness: 4 μm) to be the vibration plate 48 is formed on the upper surface (surface) of the silicon substrate 72 by sputtering.

  The subsequent steps are the same as those in the case of the ink jet recording head 32 of the first embodiment. That is, since FIGS. 9-2 (G) to 11-3 (E) are similar to the above, the description thereof is omitted.

  Next, as shown in FIG. 15-3 (G), an anti-HF protection resist 88 is applied to the upper surface of the resin protective film 92 and the ink supply path 114, and as shown in FIG. 15-3 (H), The lower surface of the silicon substrate 72 is polished so that the thickness of the silicon substrate 72 is 0.3 mm.

  Then, as shown in FIG. 15-4 (I), an opening 77 serving as a communication path is formed from the lower surface of the silicon substrate 72 by wet etching. Although the opening 77 is formed here by wet etching, the opening 77 may be formed by sandblasting or the like.

Next, a solution of SiN 79, for example, H ₃ PO ₄ chemical solution, is supplied from the opening 77, and a part of SiN 79 is removed by etching as shown in FIG. 15-4 (J). As a result, the opening 77 serving as the communication passage and the groove 72A serving as the pressure chamber communicate with each other. At this stage, the communication path is completed.

  Next, as shown in FIG. 15-5 (K), the polysilicon 76 filled (embedded) in the glass substrate 72 is selectively etched away with a KOH solution or a TMAH solution. Since the polysilicon 76 has a much faster etching rate than normal anisotropic etching, the opening 77 is etched more than necessary by the KOH solution or TMAH solution for etching the polysilicon 76. The shape will not collapse.

Thereafter, as shown in FIG. 15-5 (L), a SiN 79 solution, for example, H ₃ PO ₄ chemical solution is supplied from the opening 77 to remove the SiN film 79. At this stage, the pressure chamber and the communication path are completed.

  The subsequent steps are the same as those in the case of the ink jet recording head 32 of the first embodiment. That is, since FIGS. 12-1 (A) to 12-2 (D) are similar to the above, the description thereof is omitted.

  Next, the ink jet recording head 32 of the fourth embodiment will be described. In the following description, the same components, members, and the like as those of the ink jet recording head 32 of the first embodiment are denoted by the same reference numerals, and detailed description thereof (including operation) is omitted. In the ink jet recording head 32 of the second embodiment, only a manufacturing method (manufacturing process) different from that of the ink jet recording head 32 of the first embodiment will be described in detail with reference to FIG.

  As shown in FIG. 16A, first, a glass substrate 72 having a thickness of 0.3 mm is prepared. Then, as shown in FIG. 16B, a groove portion 72A having a depth of 0.1 m is formed in a region serving as a pressure chamber of the glass substrate 72 by wet etching.

  Next, as shown in FIG. 16-1 (C), a step portion 72B having a depth of 0.03 m is formed around the groove portion 72A by wet etching. When the stepped portion 72B is formed by wet etching, the groove portion 72A is also etched, so the depth of the groove portion 72A is 0.13 mm.

  Thus, the pressure chamber has a multi-stage structure (in this embodiment, a two-stage structure), so that the accuracy of the opening dimension is ensured even if the pressure chamber is formed by wet etching.

  The depth of the stepped portion 72B is 0.03 mm or less. Thereby, even if the stepped portion 72B is formed by wet etching, the dimensional accuracy of the stepped portion 72B is ensured. Further, the difference between the width of the groove 72A and the width of the stepped portion 72B should not exceed twice the depth of the stepped portion 72B. Accordingly, the stepped portion 72B does not become a bubble pool of bubbles generated from the ink in the pressure chamber.

  Next, as shown in FIG. 16-2 (D), SiN 79 is coated by plasma CVD over the upper surface of the glass substrate 72 and the groove 72A and the stepped portion 72B.

  Thereafter, as shown in FIG. 16-2 (E), the paste glass 76 is filled (embedded) into the groove 72A and the stepped portion 72B covered with SiN 79 by screen printing. And after filling with the paste glass 76, the glass substrate 72 is heat-processed at 800 degreeC for 10 minute (s), for example. In addition to the paste glass 76, the groove 72A and the stepped portion 72B may be filled with OCD (water glass).

  Then, after filling the paste glass 76, the upper surface (surface) of the glass substrate 72 is polished to remove the excess paste glass 76, and the upper surface (surface) is flattened. As a result, a thin film or the like can be formed with high precision on the region to be the pressure chamber. Note that when the upper surface of the glass substrate 72 is polished, SiN 79 coated on the surface of the glass substrate 72 is also polished.

  Next, as shown in FIG. 16B, a germanium (Ge) film 78 (film thickness: 1 μm) is deposited on the upper surface (surface) of the glass substrate 72 by sputtering. This Ge film 78 serves as an etching stopper layer that protects a later-described SiOx film 82 (vibrating plate 48) from being etched together when the paste glass 76 is removed by etching with a hydrogen fluoride (HF) solution in a later step. Function. The Ge film 78 can also be formed by vapor deposition or CVD. A silicon (Si) film can also be used as the etching stopper layer.

Then, as shown in FIG. 16-3 (G), a thin film that becomes the vibration plate 48 on the upper surface of the Ge film 78, for example, a temperature of 350 ° C., RF power of 300 W, frequency of 450 KHz, pressure of 1.5 torr, gas SiH ₄ / N _2. A SiOx film 82 (film thickness: 4 μm) is formed by plasma CVD with O = 150/4000 sccm. In this case, the material of the diaphragm 48 may be a SiNx film, a SiC film, a metal (Cr) film, or the like.

  Next, as shown in FIG. 16-3 (H), a polysilicon thin film 94 is formed on the lower surface of the glass substrate 72 by sputtering. Then, a pattern corresponding to the communication path is formed on the polysilicon thin film 94, and as shown in FIG. 16-3 (I), an opening 95 serving as a communication path is formed in the polysilicon thin film 94 by wet etching. To do. Using the polysilicon thin film 94 with the opening 95 formed as a pattern, an opening 77 serving as a communication path is formed in the glass substrate 72 by wet etching, as shown in FIG. The opening 95 and the opening 77 are formed in a tapered shape such that the inner surface gradually separates downward in a sectional view.

  In this embodiment, the opening 95 is formed in the polysilicon thin film 94 formed on the lower surface of the glass substrate 72, and the opening 77 is formed in the glass substrate 72 using this as a pattern. When the polysilicon thin film 94 is formed on the lower surface, a resist pattern may be provided on the polysilicon thin film 94 at the same time, and the opening 95 may be formed in the polysilicon thin film 94 by sandblasting.

  Next, as shown in FIG. 16-4 (K), a SiN film 96 is formed by plasma CVD over the lower surface of the glass substrate 72 and the opening 95 and opening 77. Then, the lower surface of the glass substrate 72 is dry-etched, and as shown in FIG. 16-4 (L), the SiN film 96 other than the portion formed in the opening 77 and the groove 72A exposed from the opening 77. A part of the SiN film 79 coated on is removed.

  The subsequent steps are the same as those in the case of the ink jet recording head 32 of the first embodiment. That is, since FIGS. 9-2 (G) to 11-3 (F) are similar to the above, description thereof is omitted.

  Next, an anti-HF protection resist 88 is applied to the upper surface of the resin protective film 92 and the ink supply path 114, and a solution containing HF is supplied from the opening 77, as shown in FIG. 16-5 (M). Then, the paste glass 76 filled (embedded) in the glass substrate 72 is removed by etching.

Thereafter, as shown in FIG. 16-5 (N), a SiN 79 solution, for example, H ₃ PO ₄ chemical solution is supplied from the opening 77 to remove the SiN film 79. At this stage, as shown in FIG. 16-5 (O), the pressure chamber and the communication path are completed.

  The subsequent steps are the same as those in the case of the ink jet recording head 32 of the first embodiment. That is, since FIGS. 12-1 (A) to 12-2 (D) are similar to the above, the description thereof is omitted.

It is a schematic front view which shows an inkjet recording device. It is explanatory drawing which shows the arrangement | sequence of an inkjet recording head. It is explanatory drawing which shows the relationship between the width | variety of a recording medium, and the width | variety of a printing area. FIG. 2A is a schematic plan view showing the overall configuration of the inkjet recording head of the first embodiment, and FIG. 2B is a schematic plan view showing the configuration of one element of the inkjet recording head of the first embodiment. (A) AA 'line sectional view of FIG. 4 (B), (B) BB' line sectional view of FIG. 4 (B), (C) CC 'line sectional view of FIG. 4 (B). It is. It is a schematic sectional drawing which shows the structure of the inkjet recording head of 1st Embodiment. FIG. 3 is a schematic plan view showing bumps of a drive IC for an ink jet recording head. It is explanatory drawing of the whole process which manufactures the inkjet recording head of 1st Embodiment. It is explanatory drawing which shows process (A)-(C) which manufactures a piezoelectric element board | substrate on the silicon substrate which concerns on 1st Embodiment. It is explanatory drawing which shows process (D)-(G) which manufactures a piezoelectric element board | substrate on the silicon substrate which concerns on 1st Embodiment. It is explanatory drawing which shows process (H)-(J) which manufactures a piezoelectric element board | substrate on the silicon substrate which concerns on 1st Embodiment. It is explanatory drawing which shows process (K)-(M) which manufactures a piezoelectric element board | substrate on the silicon substrate which concerns on 1st Embodiment. It is explanatory drawing which shows the process (A)-(B) which manufactures the top-plate member which concerns on 1st Embodiment. It is explanatory drawing which shows process (A)-(B) after joining a top plate member to the piezoelectric element substrate which concerns on 1st Embodiment. It is explanatory drawing which shows process (C)-(D) after joining a top plate member to the piezoelectric element substrate which concerns on 1st Embodiment. It is explanatory drawing which shows process (E)-(F) after joining a top plate member to the piezoelectric element substrate which concerns on 1st Embodiment. It is explanatory drawing which shows process (G)-(H) after joining a top plate member to the piezoelectric element substrate which concerns on 1st Embodiment. It is explanatory drawing which shows process (I)-(J) after joining a top plate member to the piezoelectric element substrate which concerns on 1st Embodiment. It is explanatory drawing which shows process (A)-(B) after joining a nozzle plate to the silicon substrate which concerns on 1st Embodiment. It is explanatory drawing which shows process (C)-(D) after joining a nozzle plate to the silicon substrate which concerns on 1st Embodiment. Explanatory drawing which shows the process (E) after joining a nozzle plate to the silicon substrate which concerns on 1st Embodiment. (A) It is explanatory drawing which shows another method of mounting solder, (B) It is explanatory drawing which shows another method of mounting solder. It is explanatory drawing which shows process (A)-(C) which manufactures a piezoelectric element board | substrate on the silicon substrate which concerns on 2nd Embodiment. It is explanatory drawing which shows process (D)-(E) after joining a top plate member to the piezoelectric element board | substrate which concerns on 2nd Embodiment. It is explanatory drawing which shows process (F)-(H) after joining a top plate member to the piezoelectric element substrate which concerns on 2nd Embodiment. It is explanatory drawing which shows process (A)-(C) which manufactures a piezoelectric element board | substrate on the silicon substrate which concerns on 3rd Embodiment. It is explanatory drawing which shows process (D)-(F) after joining a top plate member to the piezoelectric element substrate which concerns on 3rd Embodiment. It is explanatory drawing which shows process (G)-(H) after joining a top plate member to the piezoelectric element substrate which concerns on 3rd Embodiment. It is explanatory drawing which shows process (I)-(J) after joining a top plate member to the piezoelectric element substrate which concerns on 3rd Embodiment. It is explanatory drawing which shows process (K)-(L) after joining a top plate member to the piezoelectric element substrate which concerns on 3rd Embodiment. It is explanatory drawing which shows process (A)-(C) which manufactures a piezoelectric element board | substrate on the silicon substrate which concerns on 4th Embodiment. It is explanatory drawing which shows process (D)-(F) after joining a top plate member to the piezoelectric element substrate which concerns on 4th Embodiment. It is explanatory drawing which shows process (G)-(I) after joining a top plate member to the piezoelectric element substrate which concerns on 4th Embodiment. It is explanatory drawing which shows process (J)-(L) after joining a top plate member to the piezoelectric element substrate which concerns on 4th Embodiment. It is explanatory drawing which shows process (M)-(N) after joining a top plate member to the piezoelectric element board | substrate which concerns on 4th Embodiment. It is explanatory drawing which shows the process (O) after joining a top plate member to the piezoelectric element substrate which concerns on 4th Embodiment.

Explanation of symbols

10 Inkjet recording device 32 Inkjet recording head (droplet ejection head)
46 Piezoelectric element 48 Diaphragm 50 Communication path 56 Nozzle 72 Glass substrate (substrate)
72 Silicon substrate (substrate)
72A Groove 72B Step 76 Paste glass (filler)
76 Polysilicon (filler)
77 Opening 79 SiN film (protective layer)

Claims (4)

A pressure chamber that is in fluid communication with a nozzle for discharging droplets and filled with liquid;
A diaphragm constituting a part of the pressure chamber;
A piezoelectric element for displacing the diaphragm;
A method of manufacturing a droplet discharge head having
After forming a groove serving as the pressure chamber on one surface of a substrate made of silicon or glass, forming a step at a corner around the groove, filling the groove and the step with a filler, The diaphragm and the piezoelectric element are formed on one surface of the substrate, an opening serving as a communication path to the pressure chamber is formed on the other surface of the substrate, and the filler is exposed. A method of manufacturing a droplet discharge head, wherein an etchant is supplied to an opening to remove the filler. A pressure chamber that is in fluid communication with a nozzle for discharging droplets and filled with liquid;
A diaphragm constituting a part of the pressure chamber;
A piezoelectric element for displacing the diaphragm;
A method of manufacturing a droplet discharge head having
After forming a groove serving as the pressure chamber on one surface of a substrate made of silicon or glass, forming a step at a corner around the groove, filling the groove and the step with a filler, A diaphragm is formed on one surface of the substrate, an opening serving as a communication path to the pressure chamber is formed on the other surface of the substrate, and the filler is exposed. A method of manufacturing a droplet discharge head, comprising forming a film on a vibration plate, supplying an etchant to the opening, and removing the filler. A pressure chamber that is in fluid communication with a nozzle for discharging droplets and filled with liquid;
A diaphragm constituting a part of the pressure chamber;
A piezoelectric element for displacing the diaphragm;
A method of manufacturing a droplet discharge head having
After forming a groove serving as the pressure chamber on one surface of a substrate made of silicon or glass, forming a step at a corner around the groove, filling the groove and the step with a filler, The diaphragm and the piezoelectric element are formed on one surface of the substrate, the other surface of the substrate is polished to a predetermined thickness, and an opening serving as a communication path to the pressure chamber is formed on the other surface of the substrate. A method of manufacturing a droplet discharge head, comprising: forming a portion and exposing the filler; and supplying an etching solution to the opening to remove the filler. A pressure chamber that is in fluid communication with a nozzle for discharging droplets and filled with liquid;
A diaphragm constituting a part of the pressure chamber;
A piezoelectric element for displacing the diaphragm;
A method of manufacturing a droplet discharge head having
Forming a groove to be the pressure chamber on one surface of a substrate made of silicon or glass, forming a step at a corner around the groove, and then forming a protective layer on the groove and the step; After embedding a filler in the groove and step, the diaphragm and the piezoelectric element are formed on one surface of the substrate, and the other surface of the substrate serves as a communication path to the pressure chamber A method of manufacturing a droplet discharge head, comprising: forming a portion to expose the filler; and supplying an etching solution to the opening to remove the filler.

Images