JP2007234876A5 - - Google Patents
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- JP2007234876A5 JP2007234876A5 JP2006055007A JP2006055007A JP2007234876A5 JP 2007234876 A5 JP2007234876 A5 JP 2007234876A5 JP 2006055007 A JP2006055007 A JP 2006055007A JP 2006055007 A JP2006055007 A JP 2006055007A JP 2007234876 A5 JP2007234876 A5 JP 2007234876A5
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- Prior art keywords
- energy
- signal intensity
- laser
- polysilicon film
- laser beam
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- 239000010408 film Substances 0.000 claims 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 11
- 229920005591 polysilicon Polymers 0.000 claims 11
- 238000005224 laser annealing Methods 0.000 claims 10
- 238000003384 imaging method Methods 0.000 claims 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 5
- 230000000875 corresponding Effects 0.000 claims 4
- 230000001678 irradiating Effects 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000005259 measurement Methods 0.000 claims 2
- 239000010409 thin film Substances 0.000 claims 2
Claims (5)
前記ポリシリコン膜の表面からの暗視野経路の散乱光を撮像し、
撮像された映像信号の青色成分の信号強度特性を得、前記信号強度特性の第１及び第２の極大値間の極小値に対応するエネルギーの近傍のエネルギーを前記レーザ光の最適エネルギーとするようにした
レーザアニール装置のレーザ光のエネルギー決定方法。 In the laser beam energy determination method of a laser annealing apparatus for obtaining a polysilicon film by irradiating an amorphous silicon film with a laser beam,
Imaging the scattered light of the dark field path from the surface of the polysilicon film,
The signal intensity characteristic of the blue component of the imaged video signal is obtained, and the energy in the vicinity of the energy corresponding to the minimum value between the first and second maximum values of the signal intensity characteristic is set as the optimum energy of the laser beam. A method for determining the energy of laser light in a laser annealing apparatus.
前記青色成分の信号強度特性は、前記レーザアニール装置のレーザ光のエネルギー密度を順次所定量変えて複数個所に照射して複数のポリシリコン膜の測定パターンを形成し、前記複数の測定パターンの前記青色成分信号の信号強度より得るようにした
レーザアニール装置のレーザ光のエネルギー決定方法。 In the laser beam energy determination method of the laser annealing apparatus according to claim 1,
The signal intensity characteristic of the blue component is formed by measuring a plurality of polysilicon film measurement patterns by sequentially changing a predetermined amount of laser beam energy density of the laser annealing apparatus to form a plurality of polysilicon film measurement patterns. A method for determining the energy of laser light in a laser annealing apparatus that is obtained from the signal intensity of a blue component signal.
前記ポリシリコン膜の表面からの暗視野経路の散乱光を撮像する撮像手段と、
前記撮像手段より映像信号の青色成分の信号強度特性を得る信号強度特性形成手段と、
前記信号強度特性の第１及び第２の極大値間の極小値に対応するエネルギーを最適エネルギーと決定する決定手段とを有する
レーザアニール装置のレーザ光のエネルギー決定装置。 In the laser beam energy determination device of a laser annealing device that obtains a polysilicon film by irradiating a laser beam to an amorphous silicon film,
Imaging means for imaging scattered light in a dark field path from the surface of the polysilicon film;
Signal intensity characteristic forming means for obtaining the signal intensity characteristic of the blue component of the video signal from the imaging means ;
An apparatus for determining the energy of laser light of a laser annealing apparatus, comprising : a determining unit that determines energy corresponding to a minimum value between the first and second maximum values of the signal intensity characteristics as an optimum energy.
前記ポリシリコン膜の表面からの暗視野経路の散乱光を撮像手段を用いて撮像し、
前記撮像手段の映像信号の青色成分の信号強度特性を得、前記信号強度特性の第１及び第２の極大値間の極小値に対応するエネルギーの近傍のエネルギーを前記レーザ光の最適エネルギーとするようにしたレーザアニール装置。 In a laser annealing apparatus for obtaining a polysilicon film by irradiating an amorphous silicon film with laser light,
Imaging the scattered light of the dark field path from the surface of the polysilicon film using an imaging means ,
The signal intensity characteristic of the blue component of the video signal of the imaging means is obtained, and the energy in the vicinity of the energy corresponding to the minimum value between the first and second maximum values of the signal intensity characteristic is set as the optimum energy of the laser beam. laser annealing apparatus that.
前記ポリシリコン膜の表面からの暗視野経路の散乱光を撮像し、Imaging the scattered light of the dark field path from the surface of the polysilicon film,
撮像された映像信号の青色成分の信号強度特性を得、前記信号強度特性の第１及び第２の極大値間の極小値に対応するエネルギーの近傍のエネルギーを前記レーザ光のエネルギーに決定し、Obtaining the signal intensity characteristic of the blue component of the imaged video signal, determining the energy in the vicinity of the energy corresponding to the minimum value between the first and second maximum values of the signal intensity characteristic as the energy of the laser beam;
決定された前記エネルギーで前記アモルファスシリコン膜に前記レーザ光を照射して前記ポリシリコン膜を得るThe amorphous silicon film is irradiated with the laser beam with the determined energy to obtain the polysilicon film.
薄膜トランジスタの製造方法。A method for manufacturing a thin film transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006055007A JP4946093B2 (en) | 2006-03-01 | 2006-03-01 | Laser beam energy determination method for laser annealing apparatus, laser beam energy determination apparatus for laser annealing apparatus, laser annealing apparatus, and thin film transistor manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006055007A JP4946093B2 (en) | 2006-03-01 | 2006-03-01 | Laser beam energy determination method for laser annealing apparatus, laser beam energy determination apparatus for laser annealing apparatus, laser annealing apparatus, and thin film transistor manufacturing method |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007234876A JP2007234876A (en) | 2007-09-13 |
| JP2007234876A5 true JP2007234876A5 (en) | 2009-03-12 |
| JP4946093B2 JP4946093B2 (en) | 2012-06-06 |
Family
ID=38555152
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006055007A Expired - Fee Related JP4946093B2 (en) | 2006-03-01 | 2006-03-01 | Laser beam energy determination method for laser annealing apparatus, laser beam energy determination apparatus for laser annealing apparatus, laser annealing apparatus, and thin film transistor manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4946093B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012114909A1 (en) * | 2011-02-23 | 2012-08-30 | 株式会社日本製鋼所 | Thin film obverse face inspection method and inspection device |
| US9335276B2 (en) * | 2014-03-03 | 2016-05-10 | Coherent Lasersystems Gmbh & Co. Kg | Monitoring method and apparatus for control of excimer laser annealing |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4016504B2 (en) * | 1998-10-05 | 2007-12-05 | セイコーエプソン株式会社 | Semiconductor film manufacturing method and annealing apparatus |
| JP2001110861A (en) * | 1999-10-06 | 2001-04-20 | Seiko Epson Corp | Check method and device of semiconductor film, and manufacturing method of thin film transistor |
| JP2005072440A (en) * | 2003-08-27 | 2005-03-17 | Advanced Display Inc | Method and apparatus for manufacturing semiconductor device |
-
2006
- 2006-03-01 JP JP2006055007A patent/JP4946093B2/en not_active Expired - Fee Related
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