JP2007227580A - Device and method for liquid-immersed exposure - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To restrain failures caused by micro bubbles, watermarks, etc, from occurring without fail in liquid-immersed lithography. <P>SOLUTION: A liquid-immersed exposure device performs liquid-immersed lithography, by interposing an immersion liquid between a resist film 1 formed on a wafer substrate 2 and a projection optical system 3 which subjects the resist film 1 to exposure. The liquid-immersed exposure device is equipped with an electrifying means 5 that electrifies the immersion liquid and a de-electrifying means 6 which removes electric charge from the immersion liquid. An immersion liquid electrifying process and an immersion liquid de-electrifying process are incorporated into an exposure sequence, whereby the immersion liquid is made to transit into a hydrophilic nature or a hydrophobic nature in relation to the resist film 1. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an exposure apparatus and an exposure method for transferring a circuit pattern drawn on a mask onto a wafer substrate by a projection optical system, and more particularly to an immersion type exposure apparatus and exposure for performing immersion lithography with an immersion liquid interposed. Regarding the method.

  In general, when manufacturing various devices such as semiconductor elements such as memory and logic circuits, display elements such as liquid crystal panels, detection elements such as magnetic heads, imaging elements such as CCDs, etc., drawing on a mask using photolithography technology A reduction projection type exposure apparatus is used that transfers the circuit pattern onto a wafer substrate by a projection optical system. The minimum pattern size (resolution) that can be transferred by this exposure apparatus is proportional to the wavelength of exposure light and inversely proportional to the numerical aperture (NA) of the projection optical system. Therefore, in order to realize high resolution, the exposure light may be shortened or a projection optical system having a large NA may be used. Higher resolution of the transfer pattern has been developed in a form following this. For example, the shortening of exposure light wavelength has shifted from g-line (wavelength: 436 nm) to i-line (wavelength: 365 nm), KrF (wavelength: 248 nm), and ArF (wavelength: 193 nm). Development is progressing toward realization of F2 (wavelength: 157 nm) or EUV (wavelength: 13.5 nm). In parallel with this, the NA of the projection optical system has been accelerated, and at present, an exposure apparatus having an NA exceeding 0.9 has been developed and sold.

  As one method of continuing such a miniaturization flow without stagnation, immersion lithography using an ArF laser has been attracting attention (see, for example, Patent Document 1). Immersion lithography is a technique for realizing a higher NA by filling a space between a projection optical system and a wafer substrate with a liquid. That is, the NA of the projection optical system is NA = n · sin θ when the refractive index of the liquid is n (n> 1), so that the refractive index between the projection optical system and the wafer substrate is higher than the refractive index of air. By filling with n media, it is possible to expand and expose to n regions exceeding “1”. Therefore, immersion lithography can realize higher resolution of transfer patterns without requiring major facility changes for conventional semiconductor manufacturing, so it can be used for next-generation LSIs while suppressing an increase in manufacturing costs. The merit that it becomes possible is obtained.

JP-A-10-303114

  By the way, when pattern transfer onto a wafer substrate is performed, a resist film is formed on the wafer substrate. In immersion lithography, the material for forming the resist film is a projection optical system, a wafer substrate, and the like. There is a tendency to use a hydrophilic material having high wettability with respect to the immersion liquid filled in between. This is because many hydrophilic materials with high wettability have high solubility in a developer for developing a pattern after exposure, and the development can be appropriately performed. This is because the contact angle with the resist film can be reduced, so that microbubbles are hardly generated during exposure. “Microbubbles” refer to small bubbles generated in the immersion liquid, which can cause exposure light refraction and transfer image resolution failure. However, when the resist film is formed of a hydrophilic material having high wettability, the above-described merit can be obtained, but it is considered that elution of the resist film forming material into the immersion liquid increases. Further, when the immersion liquid is removed in order to take out the wafer substrate after exposure, the wettability is high, so that a watermark may be easily generated. “Watermark” refers to a spot-like defect caused by water droplets remaining on the resist film upon removal in the immersion liquid.

  In this regard, it is conceivable that the resist film is formed using a hydrophobic material having low wettability with respect to the immersion liquid instead of a hydrophilic material having high wettability. If the hydrophobic material has low wettability, it is difficult for the resist film forming material to elute into the immersion liquid, and the contact angle of the immersion liquid with the resist film can be increased. This is because sometimes the occurrence of a watermark can be suppressed. However, in the case of forming a resist film with a hydrophobic material having low wettability, it is considered that there is a restriction on material development in view of the tendency that a hydrophilic material is generally used as a film forming material. There is a possibility that pattern development after exposure cannot be performed properly because of its low solubility in water. Furthermore, since the contact angle of the immersion liquid with the resist film is increased, microbubbles are generated during exposure, and exposure light refraction and transfer image resolution failure may occur.

  As described above, the resist film forming material in the immersion lithography is shown in FIG. 5 regardless of whether a hydrophilic material or a hydrophobic material is used. There are merits and demerits. Therefore, in immersion lithography, it is desired to comprehensively eliminate each demerit while utilizing each merit.

  The present invention is an immersion type exposure apparatus devised to solve the above-described problems. That is, an immersion type exposure apparatus that performs immersion lithography with an immersion liquid interposed between a resist film formed on a wafer substrate and a projection optical system that performs exposure on the resist film. It is characterized by comprising a charging means for charging the liquid and a charge eliminating means for removing charge from the immersion liquid.

In the immersion type exposure apparatus configured as described above, immersion lithography is performed with an immersion liquid interposed between the resist film on the wafer substrate and the projection optical system.
At this time, the wettability of the resist film with respect to the immersion liquid is generally expressed quantitatively by the contact angle between the immersion liquid and the resist film, and if the resist film forming material is determined, the contact angle of the immersion liquid is also inherent. It will be determined by the angle. However, it is known that the contact angle can be changed by charging the immersion liquid as long as it is within a certain range. That is, for example, even when a resist film is formed on a wafer substrate with a hydrophobic material, if the charge amount of the immersion liquid is changed, the contact angle of the immersion liquid with the resist film is The size can be reduced as in the case of forming with a hydrophilic material.

  Therefore, the immersion type exposure apparatus having the above-described configuration includes a charging unit that charges the immersion liquid and a neutralization unit that performs charge removal on the immersion liquid, and charges or removes the immersion liquid. It is like that. Thus, for example, during the exposure sequence, the immersion liquid is charged by the charging means to make the resist film hydrophilic, and when the immersion liquid is removed after completion of the exposure sequence, the charged immersion liquid is used. It is possible to perform a process such that the resist film is subjected to a hydrophobic action by removing the charge. That is, the hydrophilic action state and the hydrophobic action state can be transitioned by charging and discharging the immersion liquid.

According to the present invention, charging and discharging of the immersion liquid can be incorporated into the exposure sequence so that the immersion liquid can be transitioned to either a hydrophilic action state or a hydrophobic action state in relation to the resist film. For example, during exposure, it is possible to charge the immersion liquid to a hydrophilic action state, and to remove the immersion liquid after the exposure is completed, to remove the charge to a hydrophobic action state. Even when lithography is performed, any defects such as microbubbles and watermarks can be suppressed, and an improvement in the yield of products obtained through the immersion lithography can be expected. In addition, since the hydrophilic action state and the hydrophobic action state can be changed, a high degree of freedom in designing the resist film forming material can be ensured. For example, the transparency is high but the water repellency tends to be high. Even if it is a resist forming material containing fluorine in the resin known in (1), there is a possibility that it can be used as a hydrophilic resist.
That is, in the present invention, a hydrophilic material is used as a resist film forming material and a hydrophobic material is used by transitioning between a hydrophilic action state and a hydrophobic action state by charging and discharging of the immersion liquid. It is possible to comprehensively eliminate each demerit while taking advantage of each merit.

  Hereinafter, an immersion type exposure apparatus and an immersion type exposure method according to the present invention will be described with reference to the drawings.

First, a basic configuration of the immersion type exposure apparatus will be described.
FIG. 1 is an explanatory view showing a configuration example of an immersion type exposure apparatus according to the present invention. The liquid immersion type exposure apparatus described here is for performing liquid immersion lithography, and is formed on a table (not shown) on which a wafer substrate 2 on which a resist film 1 is formed is set, and on the wafer substrate 2. A projection optical system 3 that performs exposure on the resist film 1, and a liquid holding unit 4 for interposing an immersion liquid between the resist film 1 and the projection optical system 3.

  The projection optical system 3 may be a reduction optical system that uses, for example, an ArF excimer laser that emits pulsed light with a wavelength of 193 nm as a light source. Note that the details of the reduction optical system may be realized using a known technique, and thus the description thereof is omitted here.

  The liquid holding unit 4 is for storing the immersion liquid on the resist film 1. However, the liquid holding unit 4 may store the immersion liquid so that the entire resist film 1 and the wafer substrate 2 are immersed in the immersion liquid. Further, the supply nozzle 4a for injecting and filling the immersion liquid into the liquid holding part 4 so that only the immersion liquid is interposed between the resist film 1 and the projection optical system 3 in the liquid holding part 4. Is provided. In addition to the supply nozzle 4 a, a discharge nozzle 4 b for discharging and removing the immersion liquid in the liquid holding unit 4 from the liquid holding unit 4 is also provided. Then, the immersion liquid is injected into the liquid holding unit 4 through the supply nozzle 4a, and the injected and filled immersion liquid is discharged and removed from the discharge nozzle 4b.

  It is conceivable to use ultrapure water that is easy to obtain and easy to handle as the immersion liquid to be injected and filled into the liquid holding unit 4. However, in order to reduce the surface tension of the immersion liquid and increase the surface activity, an addition of an aliphatic system that does not dissolve the resist film 1 and can ignore the influence on the lower surface of the lens element of the projection optical system 3 An agent (liquid) may be added in a small proportion. As the additive, methyl alcohol or the like having a refractive index substantially equal to that of pure water is preferable. In this way, even if the methyl alcohol component in the pure water evaporates and the content concentration changes, there is an advantage that the refractive index change of the immersion liquid as a whole can be made extremely small. The resist film 1 to be immersed in the immersion liquid is formed by using a hydrophobic material having low wettability with respect to the immersion liquid so that the elution into the immersion liquid is difficult. And Since the hydrophobic material may be a known material for forming a resist film, the description thereof is omitted here.

  By the way, in the immersion type exposure apparatus described in the present embodiment, in addition to the projection optical system 3 and the liquid holding unit 4 described above, a charging unit 5 and a charge eliminating unit 6 are provided as characteristic features thereof.

  The charging means 5 charges either the immersion liquid injected and filled into the liquid holding part 4 through the supply nozzle 4a or the immersion liquid already injected and filled into the liquid holding part 4. However, the charging unit 5 charges the immersion liquid interposed between the projection optical system 3 and the resist film 1 before the projection optical system 3 exposes the resist film 1 at the latest. .

  Charging may be performed using a frictional charging phenomenon or an induction charging phenomenon. The frictional charging phenomenon refers to static electricity due to friction between an insulator and an insulator or between an insulator and a metal object. The induction charging phenomenon means that when an electrically charged object approaches another object, the amount of static electricity of the other object changes (increases) accordingly.

  Specifically, if the triboelectric charging phenomenon is used, it is conceivable that the supply nozzle 4a is formed of a material that charges the immersion liquid, and thereby the charging means 5 is configured. Here, the “material to be charged” means a material that easily charges the immersion liquid by friction with the immersion liquid. For example, glass, nylon, aluminum, etc. are mentioned as a material which is easily charged to the positive electrode. On the other hand, examples of materials that can be easily charged to the negative electrode include fluororesin, polyvinyl chloride, and polyethylene.

In addition, when the frictional charging phenomenon is used, the supply nozzle 4a is formed in a shape for charging the immersion liquid in addition to the formation by the material to be charged or completely different from the formation by the material to be charged. It is also conceivable to constitute the means 5. Here, the “charged shape” means a shape in which the immersion liquid is easily charged by friction with the immersion liquid.
FIG. 2 is an explanatory view showing a specific example of the supply nozzle in the immersion type exposure apparatus according to the present invention. As a specific example of the shape of the supply nozzle 4a, for example, as shown in FIG. 2 (a), the shape of the injection nozzle (liquid outlet) of the supply nozzle 4a in a comb shape, or as shown in FIG. 2 (b), A shape configured so that the immersion liquid flows while meandering in the supply nozzle 4a can be mentioned. These shapes are configured to ensure a larger friction area between the component of the supply nozzle 4a and the immersion liquid. This is because as the friction area increases, the degree of charging of the immersion liquid increases accordingly.

  In addition, when the charging unit 5 is realized by devising the material or shape of the supply nozzle 4a and the charging unit 5 performs charging using the frictional charging phenomenon, the charging unit 5 is injected and filled into the liquid holding unit 4 through the supply nozzle 4a. The immersion liquid becomes the target of charging.

  On the other hand, if the induction charging phenomenon is used, an electrode for charging the immersion liquid is provided on one or both of the liquid flow path part in the supply nozzle 4a and the liquid storage part in the liquid holding part 4. It is also conceivable that the charging means 5 can be constituted by charging the immersion liquid through voltage application to the electrodes. In this case, the charging potential and polarity of the immersion liquid can be arbitrarily set by controlling the voltage applied to the electrode. Further, the immersion liquid to be charged can be arbitrarily set depending on the arrangement position of the electrodes. That is, if an electrode is arranged in the supply nozzle 4a, the immersion liquid injected and filled into the liquid holding part 4 through the supply nozzle 4a becomes an object to be charged, and if an electrode is arranged in the liquid holding part 4, The immersion liquid that has already been injected and filled into the liquid holding unit 4 becomes the object of charging.

  With respect to such a charging means 5, the static elimination means 6 performs static elimination on the immersion liquid charged by the charging means 5. However, in the charge removal, after the projection optical system 3 exposes the resist film 1, the immersion liquid in the liquid holding unit 4 interposed between the resist film 1 and the projection optical system 3 is used as the liquid holding unit 4. It is supposed to be done before removing from inside.

  FIG. 3 is an explanatory view showing an example of the charge eliminating means in the immersion type exposure apparatus according to the present invention. As a specific example of the static elimination means 6, as shown to Fig.3 (a), what performs the static elimination with respect to the said immersion liquid by contact with immersion liquid is mentioned, for example. That is, while using the electrode disposed in the liquid holding unit 4, static elimination is performed by controlling the voltage applied to the electrode, or the discharge nozzle 4b is formed of a conductive material, and the conductive material and the immersion liquid are used. It is conceivable to remove static electricity from the immersion liquid through contact with the liquid or to use other known techniques. It is also conceivable that the charge removal from the immersion liquid is performed without contact. Specifically, for example, as shown in FIG. 3 (b), a known ionizer is used as the static eliminating means 6, and the immersion liquid is irradiated with ions of AC type, pulse DC type, continuous DC type, or the like. It is also possible to perform static elimination on the immersion liquid in a non-contact manner.

Next, a processing operation example in the immersion type exposure apparatus configured as described above, that is, an immersion type exposure method will be described.
FIG. 4 is a flowchart showing an example of the procedure of the immersion type exposure method according to the present invention.

In general, in immersion lithography, a hydrophilic material having high wettability with respect to an immersion liquid tends to be used as a material for forming the resist film 1. On the other hand, when a hydrophobic material is used, it cannot be overlooked that it has an effect of reducing the watermark and suppressing the leakage of the resist component into the immersion liquid.
Therefore, in the immersion type exposure apparatus, although the resist film 1 is formed of a hydrophobic material, the contact angle between the resist film 1 and the immersion liquid is reduced and the soot behaves like being hydrophilic. In order to provide the properties, immersion exposure is performed according to the following procedure.

  In immersion exposure, first, a wafer substrate 2 to be processed is set on a table. Then, in order to interpose an immersion liquid between the resist film 1 formed on the wafer substrate 2 and the projection optical system 3, an immersion liquid is injected and filled in the liquid holding unit 4 (step 11, hereinafter step). Is abbreviated as “S”). As a result, only the immersion liquid is interposed between the resist film 1 and the projection optical system 3.

  With respect to the immersion liquid in the liquid holding unit 4, the charging unit 5 charges the immersion liquid before the projection optical system 3 starts exposure of the resist film 1 (S12). That is, the charging unit 5 charges the immersion liquid at the time of injection of the immersion liquid or at the timing after the completion of injection and before the start of exposure.

  For example, if the immersion liquid is ultrapure water (dielectric constant 80.40), static electricity of about -10 kV can be easily charged by simply rolling the surface of the fluororesin. Therefore, when the immersion liquid is ultrapure water, when the supply nozzle 4a is formed of a “material for charging the immersion liquid” such as a fluororesin, when the immersion liquid is injected into the liquid holding unit 4 The immersion liquid can be charged to about −several kV to several tens of kV (for example, about −10 kV). The same can be said for the case where the supply nozzle 4a is formed in a “shape for charging the immersion liquid”.

  When the charging means 5 uses an electrode to charge the immersion liquid, depending on the position of the electrode, either at the time of injection of the immersion liquid or at the timing of one or both after completion of the injection In addition, by applying a voltage to the electrode and controlling the magnitude of the voltage applied to the electrode, the immersion liquid in the liquid holding unit 4 is reduced to about −several kV to several tens kV (for example, about −10 kV). ) Can be charged. Further, not only charging to a negative polarity but also charging to a positive polarity can be handled.

  The immersion liquid may be charged by forming the supply nozzle 4a with “a material for charging the immersion liquid” or forming the supply nozzle 4a with “a shape for charging the immersion liquid”. May be performed using voltage application to the electrodes, or may be performed by appropriately combining these.

  When the charging unit 5 charges the immersion liquid, the projection optical system 3 thereafter exposes the resist film 1 (S13). At this time, if the immersion liquid is in a charged state, the contact angle of the immersion liquid with respect to the resist film 1 tends to be smaller than that in the case where the immersion liquid is not charged. Therefore, even if the resist film 1 is formed of a hydrophobic material, the immersion liquid changes its property in the hydrophilic direction due to charging, and transitions to a “hydrophilic action state” that acts as hydrophilicity. Therefore, if the projection optical system 3 exposes the resist film 1 while the immersion liquid is charged, microbubbles that may be generated at the interface between the immersion liquid and the resist film 1 are suppressed. It becomes possible. That is, even if the resist film 1 is formed of a hydrophobic material, the resist film 1 is made of a hydrophobic material as a result of the transition to a hydrophilic action state due to the charging of the immersion liquid and improving the wettability. Nevertheless, the generation of microbubbles can be suppressed.

  At this time, with respect to the magnitude of the charging potential of the immersion liquid, the immersion liquid and the resist film are set so that the contact angle between the immersion liquid and the resist film 1 belongs to a desired range (a range in which hydrophilicity is obtained). What is necessary is just to determine by balance with 1 formation material. Specifically, it is considered that about several tens of kV is sufficient. That is, the charging potential of the immersion liquid may be derived empirically through, for example, experiments or simulations, and the material, shape, magnitude of applied voltage to the electrode, and the like so that the derived charging potential can be obtained. Can be set.

  After the exposure sequence by the projection optical system 3 is completed, after the charged immersion liquid in the liquid holding unit 4 is discharged before removing the immersion liquid from the liquid holding unit 4 through the discharge nozzle 4b. The means 6 performs static elimination on the immersion liquid (S14). At this time, it is desirable to perform static elimination not only on the immersion liquid but also on the resist film 1 and the wafer substrate 2. It is conceivable that the neutralization of the resist film 1 and the wafer substrate 2 is performed through the neutralization of the immersion liquid if the neutralization means 6 performs the neutralization of the immersion liquid by contact with the immersion liquid. In addition, if the static elimination means 6 performs the static elimination on the immersion liquid in a non-contact manner, the resist film 1 and the wafer substrate 2 are neutralized by irradiating the resist film 1 and the wafer substrate 2 with ions. It is possible.

  By this charge removal, the immersion liquid transitions from a hydrophilic action state to a “hydrophobic action state” that acts as hydrophobicity. That is, since the resist film 1 is formed of a hydrophobic material, the hydrophilic action state due to charging returns to the original hydrophobic action state due to charge removal.

  After neutralization, the immersion liquid in a hydrophobic action state is discharged and removed from the liquid holding unit 4 through the discharge nozzle 4b (S15). In this hydrophobic action state, the water repellency between the immersion liquid and the resist film 1 increases. Therefore, it is possible to prevent the watermark from remaining on the resist film 1 when removing the immersion liquid. That is, it can contribute to suppression of defects such as watermarks due to the residual solution on the resist film 1.

  Further, if the static electricity is removed from the resist film 1 and the wafer substrate 2, the static electricity charged thereto is removed, so that it is possible to prevent the floating dust and the like from being attracted. Foreign matter adhesion to the wafer substrate 2 can be suppressed. In other words, even when the immersion liquid is charged to suppress the generation of microbubbles, it is possible to avoid the occurrence of adverse effects such as the resist film 1 and the wafer substrate 2 being charged and foreign matter adhering thereto. Become.

  After the immersion liquid is removed, if there is a wafer substrate 2 to be processed subsequently, the above-described series of processing is repeatedly performed on the resist film 1 formed on the wafer substrate 2 to be processed. If there is no wafer substrate 2, the series of processing is terminated (S16).

  As described above, according to the immersion type exposure apparatus described in the present embodiment and the immersion type exposure method executed by the immersion type exposure apparatus, charging and discharging of the immersion liquid are incorporated into the exposure sequence. The immersion liquid can be shifted to either a hydrophilic action state or a hydrophobic action state in relation to the resist film 1. Therefore, it is possible to charge the immersion liquid during exposure to make it hydrophilic, and to remove the immersion liquid after exposure to make it hydrophobic so that it becomes hydrophobic. Even when lithography is performed, any defects such as microbubbles and watermarks can be suppressed, and as a result, improvement in the yield of products obtained through the immersion lithography can be expected. In addition, since the hydrophilic action state and the hydrophobic action state can be changed, a high degree of freedom in designing the resist film forming material can be ensured. For example, the transparency is high but the water repellency tends to be high. Even if it is a resist forming material containing fluorine in the resin known in (1), there is a possibility that it can be used as a hydrophilic resist. That is, according to the immersion type exposure apparatus and the immersion type exposure method described in the present embodiment, the resist film 1 can be changed between the hydrophilic action state and the hydrophobic action state by charging and discharging of the immersion liquid. It is possible to comprehensively eliminate each demerit while utilizing the respective merits of using a hydrophilic material and a hydrophobic material as the forming material.

  In order to comprehensively eliminate each demerit while utilizing such merits, as described in the present embodiment, the immersion liquid is charged before the resist film 1 is exposed, and the resist film 1 is exposed. Thereafter, before the immersion liquid is removed from the liquid holding unit 4, the charge for the immersion liquid may be removed. That is, if charging and discharging are performed on the immersion liquid at such timing, any defects such as microbubbles and watermarks can be reliably suppressed.

  Further, as described in the present embodiment, if the immersion liquid is charged by using the forming material or shape of the supply nozzle 4a, the charging can be easily performed with a simple configuration. Become. On the other hand, if the immersion liquid is charged by applying voltage to the electrodes, the charging potential and the like can be set arbitrarily, so that the charging flexibility and versatility are sufficient. It can be secured.

  The same can be said of the charge removal as well as the charging of the immersion liquid. That is, if the charge is removed from the immersion liquid by contact with the immersion liquid, the charge removal can be easily performed with a simple configuration, while if the charge removal from the immersion liquid is performed in a non-contact manner, ion irradiation is performed. Therefore, it is possible to appropriately set the content (ion type, irradiation amount, etc.) of the battery, and sufficiently ensure the flexibility and versatility of the charge removal.

  In addition, although this embodiment demonstrated the suitable Example of this invention, this invention is not limited to the content, It can change suitably in the range which does not deviate from the summary.

It is explanatory drawing which shows the structural example of the immersion type exposure apparatus which concerns on this invention. It is explanatory drawing which shows the specific example of the supply nozzle in the immersion type exposure apparatus which concerns on this invention. It is explanatory drawing which shows the example of the static elimination means in the immersion type exposure apparatus which concerns on this invention. It is a flowchart which shows an example of the procedure of the immersion type exposure method which concerns on this invention. It is explanatory drawing which showed the characteristic of the case where a hydrophilic material is used for the resist film formation material in immersion lithography, and the case where a hydrophobic material is used.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Resist film, 2 ... Wafer substrate, 3 ... Projection optical system, 4 ... Liquid holding part, 4a ... Supply nozzle, 4b ... Discharge nozzle, 5 ... Charging means, 6 ... Static elimination means

Claims (8)

An immersion type exposure apparatus that performs immersion lithography by interposing an immersion liquid between a resist film formed on a wafer substrate and a projection optical system that performs exposure on the resist film,
Charging means for charging the immersion liquid;
An immersion type exposure apparatus, comprising: a charge eliminating unit that performs charge removal on the immersion liquid. The charging means performs charging of the immersion liquid before exposure to the resist film,
2. The neutralization unit performs neutralization on the immersion liquid after exposure to the resist film and before removing the immersion liquid from between the resist film and the projection optical system. An immersion type exposure apparatus as described. The charging unit is characterized in that a supply nozzle for interposing the immersion liquid between the resist film and the projection optical system is formed of a material for charging the immersion liquid. 2. An immersion type exposure apparatus according to 1. The charging means is characterized in that a supply nozzle for interposing the immersion liquid between the resist film and the projection optical system is formed in a shape for charging the immersion liquid. 2. An immersion type exposure apparatus according to 1. 2. The immersion according to claim 1, wherein the charging unit includes an electrode for charging the immersion liquid interposed between the resist film and the projection optical system. Mold exposure equipment. The immersion type exposure apparatus according to claim 1, wherein the neutralizing unit neutralizes the immersion liquid by contact with the immersion liquid. 2. The immersion type exposure apparatus according to claim 1, wherein the static elimination unit performs static elimination on the immersion liquid in a non-contact manner by ion irradiation to the immersion liquid. An immersion type exposure method for performing immersion lithography by interposing an immersion liquid between a resist film formed on a wafer substrate and a projection optical system for performing exposure on the resist film,
Interposing the immersion liquid between the resist film and the projection optical system;
Charging the immersion liquid;
The projection optical system exposing the resist film with an immersion liquid after charging interposed; and
Performing static elimination on the immersion liquid interposed between the resist film and the projection optical system after exposure to the resist film;
Removing the immersion liquid after neutralization from between the resist film and the projection optical system.

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