JP2007208139A - Solid-state imaging element and manufacturing method therefor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a solid imaging element which has a higher image quality than a single-plane color solid-state imaging element, and can be thinned more than a lamination type imaging element; and to provide a solid-state imaging element manufacturing method which can reduce the deterioration of characteristic of an element. <P>SOLUTION: In the method for manufacturing the solid-state imaging element including a plurality of photoelectric conversion films 9r, 9g, 9b formed on the same plane above a semiconductor substrate 1 and signal readers 4r, 4g, 4b which read a signal correspondent to a signal charge produced on each of the plurality of photoelectric conversion films 9r, 9g, 9b, the method includes a photoelectric conversion film forming process which forms selectively a material composing each of the photoelectric conversion films 9r, 9g, 9b into a film on the same plane through a mask in order to form the plurality of photoelectric conversion films 9r, 9g, 9b. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a solid-state imaging device having a large number of photoelectric conversion films formed on the same plane above a semiconductor substrate, and a signal reading unit for reading out a signal corresponding to a signal charge generated in each of the large number of photoelectric conversion films. It relates to the manufacturing method.

  In a single-plate color solid-state imaging device represented by a CCD type or CMOS type image sensor, three or four types of color filters are arranged in a mosaic pattern on the array of photoelectric conversion elements. Accordingly, color signals corresponding to the color filters are output from the photoelectric conversion elements, and a color image is generated by performing signal processing on these color signals.

  However, in a single-plate color solid-state imaging device in which color filters are arranged in a mosaic shape, in the case of a primary color filter, approximately 2/3 of incident light is absorbed by the color filter, so that the light use efficiency is poor and the sensitivity is low. There is a problem that it is low. Further, since only one color signal can be obtained by each photoelectric conversion element, the resolution is poor, and in particular, there is a problem that false colors are conspicuous.

  In order to overcome such problems, an image sensor having a structure in which three layers of photoelectric conversion films are stacked on a semiconductor substrate on which a signal readout circuit is formed (hereinafter also referred to as a multilayer image sensor) is researched and developed. (For example, Patent Documents 1 and 2 below). For example, the multilayer imaging device includes a light receiving unit structure in which photoelectric conversion films that generate signal charges are sequentially stacked on blue (B), green (G), and red (R) light sequentially from a light incident surface. In addition, a signal readout circuit that can independently read out signal charges generated by each photoelectric conversion film is provided for each light receiving unit.

  In the case of the multilayer image pickup device having such a structure, incident light is almost photoelectrically converted and read out, the visible light utilization efficiency is close to 100%, and color signals of three colors of R, G, and B in each light receiving unit. Therefore, it is possible to generate a good image with high sensitivity and high resolution (false color is not noticeable).

Special Table 2002-502120 JP 2002-83946 A

  Since the above-described stacked image sensor has three layers of photoelectric conversion films stacked above the semiconductor substrate, the thickness thereof is larger than that of a single-plate color solid-state image sensor. Applying the idea of the multilayer image sensor, the photoelectric conversion film that detects each color of R, G, B is arranged on the same plane above the semiconductor substrate, resulting in higher image quality than a single-plate color solid-state image sensor. It is possible to reduce the thickness while realizing the reduction in size. In order to realize such a configuration, it is necessary to form each of the three photoelectric conversion films by patterning. Photolithography is generally used for patterning. However, with this method, the photoelectric conversion film is placed at a high temperature or exposed to a developing solution or a cleaning solution every time patterning is performed, and its characteristics deteriorate. End up. When the photoelectric conversion film is made of an organic material, this characteristic deterioration becomes more remarkable. As described above, in the case where a large number of photoelectric conversion films are arranged on the same plane above the semiconductor substrate, it is difficult to prevent deterioration of characteristics.

  The present invention has been made in view of the above circumstances, and is a method of manufacturing a solid-state image sensor that can achieve higher image quality than a single-plate color solid-state image sensor and can be thinner than a multilayer image sensor. Thus, an object of the present invention is to provide a method for manufacturing a solid-state imaging device capable of reducing deterioration of the characteristics of the device.

  A manufacturing method of a solid-state imaging device according to the present invention includes a large number of photoelectric conversion films arranged on the same plane above a substrate, and a signal reading unit that reads a signal corresponding to a signal charge generated in each of the large number of photoelectric conversion films. The plurality of photoelectric conversion films are classified into two or more types of photoelectric conversion films that detect different wavelengths, and each of the two or more types of photoelectric conversion films is configured. And a photoelectric conversion film forming step of forming the plurality of photoelectric conversion films by selectively depositing the material to be selectively formed on the same plane through a mask.

  In the method for manufacturing a solid-state imaging device according to the present invention, a first electrode film is formed by forming a plurality of first electrode films corresponding to each of the plurality of photoelectric conversion films between the plurality of photoelectric conversion films and the substrate. And a second electrode that forms a second electrode film that is common to the plurality of photoelectric conversion films on the plurality of photoelectric conversion films, facing each of the plurality of first electrode films. Film forming step.

  In the method for manufacturing a solid-state imaging device of the present invention, the material constituting the photoelectric conversion film is an organic material.

  In the method for manufacturing a solid-state imaging device according to the present invention, the mask is a metal mask.

  The solid-state imaging device according to the present invention includes a large number of photoelectric conversion films formed on the same plane above the substrate, and a signal reading unit that reads a signal corresponding to a signal charge generated in each of the large number of photoelectric conversion films. In the solid-state imaging device, the multiple photoelectric conversion films are classified into two or more types of photoelectric conversion films that detect different wavelengths, and the multiple photoelectric conversion films formed between the multiple photoelectric conversion films and the substrate. A large number of first electrode films corresponding to each of the photoelectric conversion films, and facing each of the multiple first electrode films through the large number of photoelectric conversion films, and common to the large number of photoelectric conversion films The plurality of first electrode films are connected to different power sources for each type of the photoelectric conversion film corresponding to each of the first electrode films.

  The solid-state imaging device of the present invention is a solid-state imaging device in which the material constituting the photoelectric conversion film is an organic material.

  According to the present invention, there is provided a method for manufacturing a solid-state image sensor that can achieve a higher image quality than a single-plate color solid-state image sensor and can be made thinner than a multilayer image sensor, and reduce deterioration in characteristics of the element. The manufacturing method of the solid-state image sensor which can be provided can be provided.

  Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a partial surface schematic diagram of a solid-state imaging device for explaining an embodiment of the present invention. FIG. 2 is a schematic cross-sectional view taken along line AA of the solid-state imaging device shown in FIG.
A p-well layer 2 is formed on the n-type silicon substrate 1. Hereinafter, the n-type silicon substrate 1 and the p-well layer 2 are collectively referred to as a semiconductor substrate. Above the semiconductor substrate, a large number of R photoelectric conversion films (R films) 9r that are sensitive to light in the R wavelength region and generate R signal charges corresponding to the amount of red incident light in the incident light, A large number of G photoelectric conversion films (G films) 9g that are sensitive to light in the G wavelength region and generate G signal charges corresponding to the amount of green incident light in the incident light, and mainly in the B wavelength region A large number of photoelectric conversion films including a large number of B photoelectric conversion films (B films) 9b having sensitivity to light and generating a B signal charge corresponding to the amount of incident blue light in the incident light are on the same plane. They are arranged in a square lattice pattern in the row direction and the column direction perpendicular thereto. In the example of FIG. 1, a photoelectric conversion film array composed of a large number of R photoelectric conversion films 9r aligned in the column direction, a photoelectric conversion film array composed of a large number of G photoelectric conversion films 9g aligned in the column direction, and a large number of lines aligned in the column direction. The photoelectric conversion film column composed of the B photoelectric conversion films 9b is repeatedly arranged in the row direction in this order.

  The material constituting the R photoelectric conversion film 9r may be an inorganic material or an organic material. In the case of an inorganic material, for example, GaAlAs, Si is used. In the case of an organic material, for example, ZnPc (zinc phthalocyanine) / Alq3 (quinolinol aluminum complex) is used.

  The material constituting the G photoelectric conversion film 9g may be an inorganic material or an organic material. In the case of an inorganic material, for example, InGaAlP or GaPAs is used. In the case of an organic material, for example, R6G / PMPS (rhodamine 6G (R6G) -doped polymethylphenylsilane) is used.

  The material constituting the B photoelectric conversion film 9b may be an inorganic material or an organic material. In the case of an inorganic material, for example, InAlP is used. In the case of an organic material, for example, C6 / PHPPS (coumarin 6 (C6) -doped poly (m-hexoxyphenyl) phenylsilane) is used.

  A high-concentration n-type impurity region 3r (hereinafter abbreviated as n + region 3r) for accumulating signal charges generated in the R photoelectric conversion film 9r is formed on the surface of the p well layer 2 below the R photoelectric conversion film 9r. ing. A high-concentration n-type impurity region 3g (hereinafter abbreviated as n + region 3g) for accumulating signal charges generated in the G photoelectric conversion film 9g is formed on the surface of the p well layer 2 below the G photoelectric conversion film 9g. ing. A high concentration n-type impurity region 3b (hereinafter abbreviated as n + region 3b) for accumulating signal charges generated in the B photoelectric conversion film 9b is formed on the surface of the p well layer 2 below the B photoelectric conversion film 9b. ing.

  In a region other than the n + regions 3r, 3g, and 3b formed on the surface of the p-well layer 2, a signal reading unit for reading signals corresponding to the signal charges accumulated in the n + regions 3r, 3g, and 3b. 4r, 4g, and 4b are formed.

  The signal reading unit 4r reads a signal corresponding to the signal charge accumulated in the n + region 3r. The signal reading unit 4g reads a signal corresponding to the signal charge accumulated in the n + region 3g. The signal readout unit 4b reads out a signal corresponding to the signal charge accumulated in the n + region 3b. The signal readout units 4r, 4g, 4b can adopt a known configuration using a CCD or a MOS circuit.

  A contact portion 5r made of a metal such as aluminum is formed on the n + region 3r, and a first electrode film 7r corresponding to the R photoelectric conversion film 9r is formed on the contact portion 5r. The first electrode film 7r An R photoelectric conversion film 9r is formed thereon. The n + region 3r and the first electrode film 7r are electrically connected by a contact portion 5r. The first electrode film 7r is preferably opaque in order to double the light shielding of the n + region 3r.

  A contact portion 5g made of a metal such as aluminum is formed on the n + region 3g, and a first electrode film 7g corresponding to the G photoelectric conversion film 9g is formed on the contact portion 5g, and the first electrode film 7g A G photoelectric conversion film 9g is formed thereon. The n + region 3g and the first electrode film 7g are electrically connected by a contact portion 5g. The first electrode film 7g is preferably opaque in order to double the light shielding of the n + region 3g.

  A contact portion 5b made of a metal such as aluminum is formed on the n + region 3b, and a first electrode film 7b corresponding to the B photoelectric conversion film 9b is formed on the contact portion 5b, and the first electrode film 7b A B photoelectric conversion film 9b is formed thereon. The n + region 3b and the first electrode film 7b are electrically connected by the contact portion 5b. The first electrode film 7b is preferably opaque in order to double the light shielding of the n + region 3b.

  The contact portions 5r, 5g, and 5b are embedded in the insulating film 6, respectively. The first electrode films 7r, 7g, and 7b are embedded in the insulating film 8, respectively. In order to shield the n + regions 3r, 3g, and 3b and the signal readout units 4r, 4g, and 4b, it is preferable to make the insulating film 6 and the insulating film 8 opaque. When the insulating film 6 or the insulating film 8 is made transparent, a light shielding film for preventing light from leaking into the semiconductor substrate from between the first electrode films 7r, 7g, 7b is formed in the insulating film 6 or insulated. It is necessary to provide it in the film 8.

  On each photoelectric conversion film 9r, 9g, 9b, a second electrode having a single structure common to each photoelectric conversion film 9r, 9g, 9b is opposed to each of the first electrode films 7r, 7g, 7b. A film 11 is formed. The second electrode film 11 needs to be a transparent electrode such as ITO in order to make light incident on the photoelectric conversion films 9r, 9g, and 9b. A transparent protective film 12 is formed on the second electrode film 11. As described above, the photoelectric conversion films 9r, 9g, and 9b are respectively shared by the first electrode film separated for each photoelectric conversion film 9r, 9g, and 9b and the photoelectric conversion films 9r, 9g, and 9b. The structure is sandwiched between the two electrode films 11.

  In the solid-state imaging device having the above-described configuration, light in the R wavelength region of incident light is absorbed by the R photoelectric conversion film 9r, and a signal charge corresponding to the amount of R light is generated here. Similarly, light in the G wavelength region of incident light is absorbed by the G photoelectric conversion film 9g, and a signal charge corresponding to the amount of G light is generated here. Similarly, light in the B wavelength region of incident light is absorbed by the B photoelectric conversion film 9b, and a signal charge corresponding to the amount of B light is generated here.

  When a predetermined bias voltage is applied to each of the first electrode films 7r, 7g, and 7b and the second electrode film 11, signal charges generated in the photoelectric conversion films 9r, 9g, and 9b are converted into the first electrode film 7r. , 7g, 7b and the contact portions 5r, 5g, 5b to move to the n + regions 3r, 3g, 3b, where they are accumulated. Then, signals corresponding to the signal charges accumulated in the n + regions 3r, 3g, 3b are read out by the signal reading units 4r, 4g, 4b and output to the outside of the solid-state imaging device. Since the output signal array is the same as the signal array output from the single-plate color solid-state image sensor having the color filter array as shown in FIG. 1, signal processing used in the single-plate color solid-state image sensor is performed. Thus, color image data can be generated.

  According to the solid-state imaging device as described above, since the photoelectric conversion film is formed above the semiconductor substrate, the photoelectric conversion region can be enlarged. In addition, since the photoelectric conversion films can be arranged without gaps, light can be used efficiently. Therefore, the sensitivity can be improved as compared with the conventional single-plate color solid-state imaging device in which the signal reading unit and the photodiode are formed on the same plane.

  Further, according to the solid-state imaging device as described above, since the photoelectric conversion film has an aperture ratio of almost 100%, it is not necessary to provide a microlens above the photoelectric conversion film. For this reason, there is no reduction in the amount of light due to the provision of the microlens, and high sensitivity can be realized. In addition, the occurrence of shading due to the provision of the microlens can be suppressed.

  In addition, according to the solid-state imaging device as described above, since one photoelectric conversion film is provided above the semiconductor substrate, the thickness (see FIG. The vertical length of 2) can be reduced.

  In addition, according to the solid-state imaging device as described above, the conventional signal reading unit manufacturing technology of a solid-state imaging device and the signal processing conventionally performed in a digital camera or the like can be used as they are.

  In manufacturing the solid-state imaging device having the above-described configuration, when the photoelectric conversion films 9r, 9g, and 9b are patterned, when the photolithography method is used, as described above, the photoelectric conversion films 9r, 9g, and 9b The characteristics will deteriorate. In the present invention, the photoelectric conversion films 9r, 9g, and 9b are sequentially formed through a mask such as a metal mask to prevent this characteristic deterioration. Hereinafter, a method for manufacturing the solid-state imaging device shown in FIG. 1 will be described.

3-6 is a figure which shows the manufacturing process of the solid-state image sensor shown in FIG. 3 to 6, the same components as those in FIG.
The n + regions 3r, 3g, 3b and the signal readout portions 4r, 4g, 4b are formed by the same process as the manufacturing process of the conventional single-plate color solid-state imaging device, and then patterned on the semiconductor substrate by photolithography. 5r, 5g, and 5b are formed. Next, an opaque insulating film 6 is formed on the contact portions 5r, 5g, and 5b, and is flattened to expose the surfaces of the contact portions 5r, 5g, and 5b. Next, first electrode films 7r, 7g, and 7b patterned by photolithography are formed on the insulating film 6 and the contact portions 5r, 5g, and 5b. Next, a transparent or opaque insulating film 8 is formed on the first electrode films 7r, 7g, and 7b, and is flattened to expose the surfaces of the first electrode films 7r, 7g, and 7b. FIG. 3 shows the state at this time. In the steps so far, the photoelectric conversion film does not exist yet, so even if the photolithography method is used, the characteristics of the photoelectric conversion film are not deteriorated.

  Next, a metal mask Mg having an opening formed only in a portion corresponding to a region where the G photoelectric conversion film 9g is to be formed is provided above the insulating film 8 and the first electrode films 7r, 7g, and 7b. Then, a G photoelectric conversion film 9g is selectively formed on the insulating film 8 and the first electrode films 7r, 7g, and 7b through the metal mask Mg (FIG. 4). For example, by depositing a material constituting the G photoelectric conversion film 9g on the metal mask Mg, only the surface of the insulating film 8 below the opening of the metal mask Mg and the surfaces of the first electrode films 7r, 7g, and 7b is subjected to G photoelectric. The conversion film 9g can be selectively formed. The opening area of the metal mask Mg is preferably larger than the area of the first electrode film 7g in plan view. By doing in this way, it is possible to prevent a situation in which the photoelectric conversion material does not get on a part of the first electrode film 7g, and the G photoelectric conversion film 9g is securely placed on the first electrode film 7g. Can be formed.

  Next, the metal mask Mg is removed, and an opening is formed only in a portion corresponding to the region where the B photoelectric conversion film 9b is to be formed above the insulating film 8 and the first electrode films 7r, 7g, and 7b. Is installed. Then, a B photoelectric conversion film 9b is selectively formed on the insulating film 8 and the first electrode films 7r, 7g, and 7b through the metal mask Mb (FIG. 5). For example, by depositing a material constituting the B photoelectric conversion film 9b on the metal mask Mb, the B photoelectric is applied only to the surfaces of the insulating film 8 and the first electrode films 7r, 7g, 7b below the opening of the metal mask Mb. The conversion film 9b can be selectively formed. The opening area of the metal mask Mb is preferably larger than the area of the first electrode film 7b in plan view. By doing in this way, it is possible to prevent a situation in which the photoelectric conversion material is not applied to a part of the first electrode film 7b, and the B photoelectric conversion film 9b is securely formed on the first electrode film 7b. Can be formed.

  Next, the metal mask Mb is removed, and the metal mask Mr in which an opening is formed only in a portion corresponding to the region where the R photoelectric conversion film 9r is to be formed above the insulating film 8 and the first electrode films 7r, 7g, 7b. Is installed. Then, an R photoelectric conversion film 9r is selectively formed on the insulating film 8 and the first electrode films 7r, 7g, and 7b through the metal mask Mr. For example, by depositing a material constituting the R photoelectric conversion film 9r on the metal mask Mr, only the surface of the insulating film 8 below the opening of the metal mask Mr and the surfaces of the first electrode films 7r, 7g, and 7b is subjected to the R photoelectric. The conversion film 9r can be selectively formed. The opening area of the metal mask Mr is preferably larger than the area of the first electrode film 7r in plan view. By doing in this way, it is possible to prevent a situation in which the photoelectric conversion material is not deposited on a part of the first electrode film 7r, and the R photoelectric conversion film 9r is securely disposed on the first electrode film 7r. Can be formed.

  Next, the metal mask Mr is removed, a second electrode film 11 made of ITO or the like is formed on each photoelectric conversion film 9r, 9g, 9b, and a protective film 12 made of a transparent insulating material or the like is formed thereon. Thus, a solid-state imaging device having the configuration shown in FIG. 2 is obtained.

  In the above description, a metal mask is used. However, the material of the mask is not limited to metal, and any material can be used as long as it can shield the material constituting the photoelectric conversion film from reaching the semiconductor substrate side.

  According to the above manufacturing method, each photoelectric conversion film 9r, 9g, 9b can be formed without using a photolithography method. Further, since the second electrode film 11 is shared by the photoelectric conversion films 9r, 9g, and 9b, it is not necessary to perform a photolithography method after the formation of the photoelectric conversion films 9r, 9g, and 9b. Therefore, characteristic deterioration of each photoelectric conversion film 9r, 9g, 9b can be prevented.

  In order to form a photoelectric conversion film using a photolithography method, first, a photoelectric conversion film is formed over the insulating film 8 and the first electrode films 7r, 7g, and 7b, and the photoelectric conversion film is formed on the formed photoelectric conversion film. It is necessary to repeat the process of forming a patterned resist and selectively removing the photoelectric conversion film by using the resist as a mask three times. On the other hand, since the manufacturing method of this embodiment can reduce the number of processes at the time of photoelectric conversion film formation significantly, it can reduce manufacturing cost.

  In the case of the solid-state imaging device having the configuration shown in FIG. 2, if the first electrode films 7r, 7g, and 7b are separated from each other, a short circuit does not occur between the photoelectric conversion films. For this reason, the alignment accuracy of each photoelectric conversion film is not so required. Therefore, even if a method of selectively forming a photoelectric conversion film through a mask as in the present embodiment is employed, it is possible to maintain sufficient performance.

  By manufacturing the solid-state imaging device shown in FIG. 2 by the manufacturing method as described above, the solid-state imaging has higher image quality than the single-plate color solid-state imaging device, is thinner than the stacked imaging device, and has less characteristic deterioration of the photoelectric conversion film. An element can be realized.

  In the solid-state imaging device having the configuration shown in FIG. 2, in order to move the signal charges generated in the photoelectric conversion films 9r, 9g, and 9b to the n + regions 3r, 3g, and 3b, the photoelectric conversion films 9r, 9g, and 9b are biased. It is necessary to apply a voltage. Even if the bias voltages applied to the photoelectric conversion films 9r, 9g, and 9b are all the same, it is possible to obtain a color image by photographing. However, since the photoelectric conversion films 9r, 9g, and 9b have different characteristics, good image quality cannot be obtained if the same bias voltage is applied to all of them. For example, while there are few signal charge recombination in one photoelectric conversion film, signal charge recombination increases in another photoelectric conversion film, resulting in a sensitivity difference for each color. Therefore, in this embodiment, in order to improve the image quality, the bias voltage applied to each of the photoelectric conversion films 9r, 9g, and 9b can be independently controlled.

FIG. 7 is a diagram equivalently showing the configuration of the solid-state imaging device of FIG. In FIG. 7, the same components as those in FIG. The solid-state imaging device shown in FIG. 7 has a configuration using a known three-transistor MOS circuit as the signal readout units 4r, 4g, and 4b shown in FIG.
Since the signal reading units 4r, 4g, and 4b have the same configuration, the signal reading unit 4r will be described. The signal reading unit 4r selects the output transistor 21, the reset transistor 20 for resetting the signal charge moved to the gate of the output transistor 21, and the photoelectric conversion film row composed of a large number of photoelectric conversion films arranged in the row direction. The row selection transistor 22 is provided.

  The reset transistor 20 has a source connected to the input terminal I, a drain connected to the power supply Vn (R), and a gate connected to the reset signal line Reset. The output transistor 21 has its gate connected to the input terminal I and the source of the reset transistor 20, its source connected to the power supply Vcc, and its drain connected to the source of the row selection transistor 22. The row selection transistor 22 has its gate connected to the row selection signal line Row and its drain connected to the output signal line V-out (R).

  The difference between the signal readout units 4r, 4g, and 4b is that the power source connected to the drain of the reset transistor 20 is different and the output signal line is different. By making the power supply connected to the drain of the reset transistor 20 different for each of the signal readout units 4r, 4g, 4b, the bias voltages applied to the first electrode films 7r, 7g, 7b are independently controlled. be able to. With this configuration, the bias voltage applied to each of the photoelectric conversion films 9r, 9g, and 9b can be set to an optimum value, and image quality can be improved.

  A photoelectric conversion film made of an organic material can change quantum efficiency by changing a bias voltage applied thereto. For this reason, when the material constituting the photoelectric conversion film is an organic material, the bias voltage applied to each of the photoelectric conversion films 9r, 9g, and 9b is controlled independently as in the present embodiment. At the time of conversion, the effect that the sensitivity of light of each RGB component can be adjusted is also obtained.

  Note that the configuration shown in FIG. 7 is an example, and in order to independently control the bias voltage applied to each of the photoelectric conversion films 9r, 9g, 9b, it is connected to the first electrode films 7r, 7g, 7b. It is sufficient if the power supplies are different. Further, even if the signal reading units 4r, 4g, 4b use a CCD, the photoelectric conversion films 9r, 9g can be obtained by using different power sources connected to the first electrode films 7r, 7g, 7b. , 9b can be set to an optimum value.

  Further, the arrangement of the photoelectric conversion films 9r, 9g, and 9b is not limited to that shown in FIG. 1, but may be the arrangement shown in FIGS. 8A and 8B.

  In the present embodiment, a large number of photoelectric conversion films included in the solid-state imaging device include three types of R photoelectric conversion device 9r, G photoelectric conversion device 9g, and B photoelectric conversion device 9b. Four or more types may be included. The type of photoelectric conversion film is not limited to detecting RGB light, and may be cyan (Cy), magenta (Mg), and yellow (Ye) light. For example, a large number of photoelectric conversion films detect a large number of photoelectric conversion films Cy that detect Cy light, a large number of photoelectric conversion films Mg that detect Mg light, and a large number of photoelectric conversion films Ye that detect Ye light. , And a large number of photoelectric conversion films G for detecting G light, and these may be arranged as shown in FIG.

  In the above description, the photoelectric conversion film may be made of either an inorganic material or an organic material. However, the above-described manufacturing method has a great effect because the photoelectric conversion element is made of an organic material. Is the case. For this reason, it is especially preferable that the material which comprises a photoelectric converting film is an organic material.

Partial surface schematic diagram of a solid-state imaging device for explaining an embodiment of the present invention Sectional schematic diagram of the AA line of the solid-state imaging device shown in FIG. The figure which shows the manufacturing process of the solid-state image sensor shown in FIG. The figure which shows the manufacturing process of the solid-state image sensor shown in FIG. The figure which shows the manufacturing process of the solid-state image sensor shown in FIG. The figure which shows the manufacturing process of the solid-state image sensor shown in FIG. The figure which showed equivalently the structure of the solid-state image sensor of FIG. The figure which shows the modification of a photoelectric converting film arrangement | sequence

Explanation of symbols

4r R signal reading unit 4g G signal reading unit 4b B signal reading unit 9r R photoelectric conversion film 9g G photoelectric conversion film 9b B photoelectric conversion film

Claims (6)

A method for manufacturing a solid-state imaging device, comprising: a large number of photoelectric conversion films arranged on the same plane above a substrate; and a signal reading unit that reads a signal corresponding to a signal charge generated in each of the large number of photoelectric conversion films. And
The large number of photoelectric conversion films are classified into two or more types of photoelectric conversion films that detect different wavelengths,
Including a photoelectric conversion film forming step of forming the plurality of photoelectric conversion films by selectively and sequentially forming a material constituting each of the two or more types of photoelectric conversion films on the same plane through a mask. Manufacturing method of solid-state image sensor. It is a manufacturing method of the solid-state image sensing device according to claim 1,
A first electrode film forming step of forming a number of first electrode films corresponding to the number of photoelectric conversion films between the number of photoelectric conversion films and the substrate;
A second electrode film forming step of forming a second electrode film which is opposed to each of the plurality of first electrode films and shared by the plurality of photoelectric conversion films on the plurality of photoelectric conversion films. The manufacturing method of the solid-state image sensor containing these. It is a manufacturing method of the solid-state image sensing device according to claim 1 or 2,
The manufacturing method of the solid-state image sensor whose material which comprises the said photoelectric converting film is an organic material. It is a manufacturing method of the solid-state image sensing device according to any one of claims 1 to 3,
A method for manufacturing a solid-state imaging device, wherein the mask is a metal mask. A solid-state imaging device having a large number of photoelectric conversion films formed on the same plane above the substrate, and a signal reading unit that reads a signal corresponding to a signal charge generated in each of the large number of photoelectric conversion films,
The large number of photoelectric conversion films are classified into two or more types of photoelectric conversion films that detect different wavelengths,
A number of first electrode films corresponding to each of the number of photoelectric conversion films formed between the number of photoelectric conversion films and the substrate;
A second electrode film that is opposed to each of the plurality of first electrode films through the plurality of photoelectric conversion films and is shared by the plurality of photoelectric conversion films;
The solid-state imaging device in which the multiple first electrode films are connected to different power sources for each type of the photoelectric conversion film corresponding to each of the first electrode films. The solid-state imaging device according to claim 5,
The solid-state image sensor whose material which comprises the said photoelectric converting film is an organic material.

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