JP2007157281A5 - - Google Patents

Download PDF

Info

Publication number
JP2007157281A5
JP2007157281A5 JP2005353450A JP2005353450A JP2007157281A5 JP 2007157281 A5 JP2007157281 A5 JP 2007157281A5 JP 2005353450 A JP2005353450 A JP 2005353450A JP 2005353450 A JP2005353450 A JP 2005353450A JP 2007157281 A5 JP2007157281 A5 JP 2007157281A5
Authority
JP
Japan
Prior art keywords
layer
layers
magnetoresistive
magnetoresistive element
magnetic material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2005353450A
Other languages
Japanese (ja)
Other versions
JP2007157281A (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2005353450A priority Critical patent/JP2007157281A/en
Priority claimed from JP2005353450A external-priority patent/JP2007157281A/en
Publication of JP2007157281A publication Critical patent/JP2007157281A/en
Publication of JP2007157281A5 publication Critical patent/JP2007157281A5/ja
Withdrawn legal-status Critical Current

Links

Claims (4)

磁気抵抗効果素子と、該磁気抵抗効果素子の上部と下部とのそれぞれに導電性磁性層からなる上部シールド層と下部シールド層と、該磁気抵抗効果素子の両側壁面に直に接するサイドシールド層とを有し、該磁気抵抗効果素子を垂直方向に通過してセンス電流が流れる磁気抵抗効果ヘッドにおいて、
該サイドシールド層の材料が、Ｍｎ−Ｚｎ、Ｃｕ−Ｚｎ、Ｎｉ−Ｚｎ及びＣｕ−Ｚｎ−Ｍｇのうちの少なくとも一つを含むフェライトからなる高絶縁性磁性材料である
ことを特徴とする磁気抵抗効果ヘッド。 A magnetoresistive element, an upper shield layer and a lower shield layer made of a conductive magnetic layer on each of the upper and lower parts of the magnetoresistive element, and side shield layers that are in direct contact with both side walls of the magnetoresistive element; And a magnetoresistive head in which a sense current flows through the magnetoresistive element in a vertical direction,
Magnetoresistance material of the side shield layer, characterized in that it is a highly insulating magnetic material made of ferrite including at least one of Mn-Zn, Cu-Zn, Ni-Zn and Cu-Zn-Mg Effect head. 該磁気抵抗効果素子が、多層に積層された非磁性導電層からなる中間層を有し、該中間層が二つの磁性材料層に挟持されており、該磁性材料層の一方が反磁性材料層であるスピンバルブ型ＣＰＰ−ＧＭＲ素子であるThe magnetoresistive element has an intermediate layer composed of nonmagnetic conductive layers stacked in multiple layers, the intermediate layer is sandwiched between two magnetic material layers, and one of the magnetic material layers is a diamagnetic material layer Is a spin valve type CPP-GMR element
ことを特徴とする請求項１記載の磁気抵抗効果ヘッド。The magnetoresistive head according to claim 1. 該磁気抵抗効果素子が、多層に積層された非磁性絶縁層からなるトンネル接合層を有し、該トンネル接合層が二つの磁性材料層に挟持されており、該磁性材料層の一方が反磁性材料層であるスピンバルブ型ＴＭＲ素子であるThe magnetoresistive element has a tunnel junction layer composed of nonmagnetic insulating layers stacked in multiple layers, the tunnel junction layer is sandwiched between two magnetic material layers, and one of the magnetic material layers is diamagnetic. It is a spin valve type TMR element that is a material layer
ことを特徴とする請求項１記載の磁気抵抗効果ヘッド。The magnetoresistive head according to claim 1. 請求項１記載の磁気抵抗効果ヘッドを読み取り用ヘッドとして搭載したThe magnetoresistive head according to claim 1 is mounted as a read head.
ことを特徴とする磁気記録装置。A magnetic recording apparatus.
JP2005353450A 2005-12-07 2005-12-07 Magneto-resistive head Withdrawn JP2007157281A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005353450A JP2007157281A (en) 2005-12-07 2005-12-07 Magneto-resistive head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005353450A JP2007157281A (en) 2005-12-07 2005-12-07 Magneto-resistive head

Publications (2)

Publication Number Publication Date
JP2007157281A JP2007157281A (en) 2007-06-21
JP2007157281A5 true JP2007157281A5 (en) 2008-11-13

Family

ID=38241434

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005353450A Withdrawn JP2007157281A (en) 2005-12-07 2005-12-07 Magneto-resistive head

Country Status (1)

Country Link
JP (1) JP2007157281A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7916430B2 (en) * 2007-08-09 2011-03-29 Tdk Corporation Thin-film magnetic head and manufacturing method thereof
US7876534B2 (en) 2008-01-15 2011-01-25 Tdk Corporation Magneto-resistive effect device of the CPP type, and magnetic disk system

Similar Documents

Publication Publication Date Title
JP3807254B2 (en) Magnetoresistive effect element, magnetoresistive effect type magnetic sensor, and magnetoresistive effect type magnetic head
US8913349B2 (en) CPP-type magnetoresistance effect element and magnetic disk device using side shield layers
US8395867B2 (en) Magnetic sensor with a recessed reference layer assembly and a front shield
JP3849460B2 (en) Magnetoresistive effect element, magnetoresistive effect type magnetic sensor, and magnetoresistive effect type magnetic head
JP4538342B2 (en) Magnetoresistive element and manufacturing method thereof
JP2004260149A5 (en)
JP4658659B2 (en) Magnetoresistance effect element having CPP structure and method of forming the same
US8891208B2 (en) CPP-type magnetoresistive element including a rear bias structure and lower shields with inclined magnetizations
DE602006017379D1 (en) MAGNETORESISTIVE CONSTRUCTION ELEMENT
JP2011137811A5 (en)
JP2005339784A (en) Cpp-gmr reproducing head, its manufacturing method and cpp-gmr element
JP2007005803A (en) Magnetoresistive element and arrangement
JP2001006130A (en) Tunneling magneto-resistance effect type head
JP2007299512A5 (en)
TW201329974A (en) Magnetic random access memory (MRAM) cell, method for writing and reading the MRAM cell using a self-referenced read operation
US7821747B2 (en) Method and apparatus for providing improved pinning structure for tunneling magnetoresistive sensor
US7356909B1 (en) Method of forming a CPP magnetic recording head with a self-stabilizing vortex configuration
KR100713089B1 (en) Cpp-type giant manetoresistance effect element and magnetic component and magnetic device using it
US7046487B2 (en) Magnetoresistive effective element, thin film magnetic head, magnetic head device and magnetic recording/reproducing device
JP2006309842A (en) Magnetic field detecting sensor, thin film magnetic head, wafer of thin film magnetic head, head gimbal assembly and hard disk unit
JP4147118B2 (en) Three-terminal magnetic head and magnetic recording / reproducing apparatus equipped with the same
JP2010146650A (en) Magnetic read head
JP2012134495A5 (en)
JP2005019990A5 (en)
JP4939050B2 (en) Method for forming magnetic free layer of magnetic tunnel junction element, tunnel junction read head and method for manufacturing the same