JP2007150520A - High frequency switch - Google Patents

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JP2007150520A
JP2007150520A JP2005340025A JP2005340025A JP2007150520A JP 2007150520 A JP2007150520 A JP 2007150520A JP 2005340025 A JP2005340025 A JP 2005340025A JP 2005340025 A JP2005340025 A JP 2005340025A JP 2007150520 A JP2007150520 A JP 2007150520A
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switching element
lines
input terminal
terminal
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JP4718308B2 (en
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Masaki Hanya
政毅 半谷
Tamotsu Nishino
有 西野
Takesuke Kitsukawa
雄亮 橘川
Kenji Kawakami
憲司 川上
Moriyasu Miyazaki
守泰 宮▲崎▼
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Mitsubishi Electric Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To solve problems of a conventional high frequency switch that the impedance viewed from a high frequency branch point toward each output terminal is greatly fluctuated attended with a frequency change, variations in a reflection characteristic at an input terminal due to a frequency change are high, and a pass characteristic between the input terminal and the output terminal is greatly fluctuated attended with the frequency change. <P>SOLUTION: A high frequency switch disclosed herein includes: an input terminal; a first high frequency line one terminal of which is connected to the input terminal and having an electric length of (1/4+M/2) wavelength (M is an integer) equivalent to a desired frequency; a parallel switching element connected to the other terminal of the first high frequency line; a second high frequency line one terminal of which is connected to the parallel switching element and having an electric length of (1/4+N/2) wavelength (N is an integer) equivalent to the desired frequency; a series switching element one terminal of which is connected to the other terminal of the second high frequency line; and an output terminal connected to the other terminal of the series switching element. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

この発明は、高周波において低損失で広帯域な特性を有する高周波スイッチに関するものである。   The present invention relates to a high-frequency switch having low-loss and broadband characteristics at high frequencies.

図10は例えば、背景技術1の特開2000−261218号公報による高周波スイッチの回路図である。この高周波スイッチは、複数個のトライステートスイッチ1a〜1eがストリップライン3によってトーナメント状に接続されており、各スイッチ1a〜1eに接続するライン3同士の分岐点N1〜N3からオフ状態のスイッチ1a〜1eを見たときのインピーダンスの実部が最大となり、虚部が0となるように当該分岐点N1〜N3からスイッチ1a〜1eまでのストリップライン3の長さS1〜S5が調整されている。さらに、各分岐点N1〜N3に接続するライン3同士の根元の分岐点N3、N4から当該各分岐点N1〜N3までのストリップライン3の長さL1〜L3が1/2波長の整数倍に調整されている。   FIG. 10 is a circuit diagram of a high-frequency switch according to, for example, Japanese Patent Laid-Open No. 2000-261218 of Background Art 1. In this high-frequency switch, a plurality of tri-state switches 1a to 1e are connected in a tournament form by strip lines 3, and the switch 1a is turned off from branch points N1 to N3 between the lines 3 connected to the switches 1a to 1e. The lengths S1 to S5 of the stripline 3 from the branch points N1 to N3 to the switches 1a to 1e are adjusted so that the real part of the impedance when ˜1e is viewed is maximized and the imaginary part is 0. . Further, the lengths L1 to L3 of the strip lines 3 from the branch points N3 and N4 at the roots of the lines 3 connected to the branch points N1 to N3 to the branch points N1 to N3 are an integral multiple of 1/2 wavelength. It has been adjusted.

図11は、前記高周波スイッチにおいて単極16投スイッチを構成した時の構成図である。図12は、前記高周波スイッチにおいて、16個のトライステートスイッチのうち1個を短絡状態とし、他のトライステートスイッチを開放状態とした時の高周波信号の流れである。図13に、前記単極16投スイッチの反射損失と通過損失の計算結果を示す。中心周波数は60GHzとした。また、トライステートスイッチの寄生容量、寄生抵抗はなく、基板の導体損、誘電体損も無いものとした。   FIG. 11 is a configuration diagram when a single-pole 16-throw switch is configured in the high-frequency switch. FIG. 12 shows the flow of a high-frequency signal when one of the 16 tri-state switches in the high-frequency switch is short-circuited and the other tri-state switches are open. FIG. 13 shows calculation results of reflection loss and passage loss of the single-pole 16-throw switch. The center frequency was 60 GHz. Further, the tristate switch has no parasitic capacitance and resistance, and there is no conductor loss or dielectric loss of the substrate.

図14は例えば、背景技術2による高周波スイッチの回路図である。101は入力端子、102aは第1の出力端子、102bは第2の出力端子、102cは第3の出力端子、102dは第4の出力端子、103は入力側高周波線路で一端が入力端子101に接続されている。104aは第1の出力側高周波線路で一端が入力側高周波線路103の他端に接続されている。104bは第2の出力側高周波線路で一端が入力側高周波線路103の他端に接続されている。104cは第3の出力側高周波線路で一端が入力側高周波線路103の他端に接続されている。104dは第4の出力側高周波線路で一端が入力側高周波線路103の他端に接続されている。この出力側高周波線路104a〜104dの一端と入力側高周波線路103の他端との接続点が高周波分岐点106を形成する。105aは第1の直列スイッチング素子で、第1の出力側高周波線路104aの他端と第1の出力端子102aとの間に接続される。105bは第2の直列スイッチング素子で、第2の出力側高周波線路104bの他端と第2の出力端子102bとの間に接続される。105cは第3の直列スイッチング素子で、第3の出力側高周波線路104cの他端と第3の出力端子102cとの間に接続される。105dは第4の直列スイッチング素子で、第4の出力側高周波線路104dの他端と第4の出力端子102dとの間に接続される。また、前記第1〜第4の出力側高周波線路104a〜104dは所望周波数において、NN/2波長(NNは1以上の整数)の電気長とされている。   FIG. 14 is a circuit diagram of a high frequency switch according to Background Art 2, for example. 101 is an input terminal, 102a is a first output terminal, 102b is a second output terminal, 102c is a third output terminal, 102d is a fourth output terminal, 103 is an input side high-frequency line, and one end is connected to the input terminal 101 It is connected. Reference numeral 104 a denotes a first output-side high-frequency line, and one end is connected to the other end of the input-side high-frequency line 103. Reference numeral 104 b denotes a second output-side high-frequency line, and one end is connected to the other end of the input-side high-frequency line 103. Reference numeral 104 c denotes a third output-side high-frequency line, and one end is connected to the other end of the input-side high-frequency line 103. Reference numeral 104 d denotes a fourth output-side high-frequency line, and one end is connected to the other end of the input-side high-frequency line 103. A connection point between one end of each of the output side high frequency lines 104 a to 104 d and the other end of the input side high frequency line 103 forms a high frequency branch point 106. A first series switching element 105a is connected between the other end of the first output-side high-frequency line 104a and the first output terminal 102a. Reference numeral 105b denotes a second series switching element, which is connected between the other end of the second output-side high-frequency line 104b and the second output terminal 102b. Reference numeral 105c denotes a third series switching element, which is connected between the other end of the third output-side high-frequency line 104c and the third output terminal 102c. Reference numeral 105d denotes a fourth series switching element, which is connected between the other end of the fourth output-side high-frequency line 104d and the fourth output terminal 102d. The first to fourth output-side high-frequency lines 104a to 104d have an electrical length of NN / 2 wavelengths (NN is an integer of 1 or more) at a desired frequency.

次に動作について説明する。
この高周波スイッチにおいて、例えば第1の直列スイッチング素子105aを短絡状態にし、第2〜第4の直列スイッチング素子105b、105c、105dを開放状態にすると、前記高周波分岐点106から第2〜第4の出力端子102b、102c、102dを見たインピーダンスは所望周波数においてオープンになるため、入力端子101と第1の出力端子102a間は通過状態となり、入力端子101に入力された高周波信号は第1の出力端子102aに出力される。このように、直列スイッチング素子の開閉状態により、通過状態とする出力端子を選択することができる。この例の場合、この高周波スイッチはSP4T(単極4投)スイッチとして動作する。
Next, the operation will be described.
In this high-frequency switch, for example, when the first series switching element 105a is short-circuited and the second to fourth series switching elements 105b, 105c, and 105d are opened, the second to fourth from the high-frequency branch point 106. Since the impedance viewed from the output terminals 102b, 102c, and 102d is open at a desired frequency, the input terminal 101 and the first output terminal 102a are in a passing state, and the high-frequency signal input to the input terminal 101 is the first output. It is output to the terminal 102a. In this way, the output terminal to be passed can be selected according to the open / close state of the series switching element. In this example, the high frequency switch operates as an SP4T (single pole, four throw) switch.

特開2000−261218号公報JP 2000-261218 A

しかしながら、上記背景技術2における高周波スイッチでは、出力側高周波線路がNN/2波長の電気長を持つので、高周波分岐点106から第2〜第4の出力端子102b、102c、102dを見たインピーダンスが周波数の変化に伴い大きく変動し、それにより入力端子101における周波数の変化による反射特性の変動が大きくなる。その結果、入力端子101と第1の出力端子102aの通過特性が、周波数の変化に伴い大きく変動する問題があった。   However, in the high-frequency switch in Background Art 2 above, the output-side high-frequency line has an electrical length of NN / 2 wavelength, so that the impedance when the second to fourth output terminals 102b, 102c, 102d are viewed from the high-frequency branch point 106 is As the frequency changes, it largely fluctuates, and as a result, the reflection characteristic fluctuates greatly due to the frequency change at the input terminal 101. As a result, there has been a problem that the pass characteristics of the input terminal 101 and the first output terminal 102a fluctuate greatly as the frequency changes.

1/2波長の電気長をもつ先端が開放された高周波線路の反射位相は−2πとなることが知られている。この関係を用いると、上記背景技術2において、高周波分岐点106における反射位相は式1と与えられる。   It is known that the reflection phase of a high frequency line having an open end having an electrical length of 1/2 wavelength is −2π. Using this relationship, the reflection phase at the high-frequency branch point 106 is given by Equation 1 in Background Art 2 above.

Figure 2007150520
Figure 2007150520

よって、この式1の両辺を所望周波数で規格化された周波数f'で微分すると、式2となる。ここで例えば、NN=1と選ぶと式2は式3となる。   Therefore, when both sides of Equation 1 are differentiated by the frequency f ′ normalized by the desired frequency, Equation 2 is obtained. Here, for example, if NN = 1 is selected, Expression 2 becomes Expression 3.

Figure 2007150520
Figure 2007150520

この発明に係る高周波スイッチは、
入力端子と、
一方が前記入力端子に接続され、所望周波数において(1/4+M/2)波長(Mは整数)の電気長を持つ第1の高周波線路と、
前記第1の高周波線路の他方に接続された並列スイッチング素子と、
一方が前記並列スイッチング素子に接続され、所望周波数において(1/4+N/2)波長(Nは整数)の電気長を持つ第2の高周波線路と、
一方が前記第2の高周波線路の他方に接続された直列スイッチング素子と、
前記直列スイッチング素子の他方に接続された出力端子とを備える。
The high-frequency switch according to the present invention is
An input terminal;
A first high-frequency line connected to the input terminal and having an electrical length of (1/4 + M / 2) wavelength (M is an integer) at a desired frequency;
A parallel switching element connected to the other of the first high-frequency lines;
A second high-frequency line, one of which is connected to the parallel switching element and having an electrical length of (1/4 + N / 2) wavelength (N is an integer) at a desired frequency;
A series switching element, one connected to the other of the second high-frequency lines;
And an output terminal connected to the other of the series switching elements.

この発明によれば、並列スイッチング素子を短絡状態にしたとき、周波数の変化に伴う第2の高周波線路のインピーダンスの変化が入力端子の反射位相に影響しないので、その結果、周波数の変化にともなう反射損失の特性の変化が小さい高周波スイッチを得ることができる。   According to the present invention, when the parallel switching element is short-circuited, the change in impedance of the second high-frequency line accompanying the change in frequency does not affect the reflection phase of the input terminal, and as a result, the reflection due to the change in frequency. A high-frequency switch having a small change in loss characteristics can be obtained.

実施の形態1.
図1はこの発明の実施の形態1による高周波スイッチの構成を示す回路図である。1aは入力端子、1bは出力端子、2aは一端が入力端子1aに接続された第1の高周波線路、2bは一端が第1の高周波線路2aの他端に接続された第2の高周波線路、3は一端が第1の高周波線路2aの他端に、他端がグランドに接続された並列スイッチング素子、4は一端が第2の高周波線路2bの他端に、他端が出力端子1bに接続された直列スイッチング素子である。
なお、第1の高周波線路2aは所望周波数において(1/4+M/2)波長の電気長になるようにし、第2の高周波線路2bは所望周波数において(1/4+N/2)波長の電気長になるようにする。但し、M,Nは0以上の整数である。
Embodiment 1 FIG.
1 is a circuit diagram showing a configuration of a high-frequency switch according to Embodiment 1 of the present invention. 1a is an input terminal, 1b is an output terminal, 2a is a first high-frequency line whose one end is connected to the input terminal 1a, 2b is a second high-frequency line whose one end is connected to the other end of the first high-frequency line 2a, 3 is a parallel switching element having one end connected to the other end of the first high-frequency line 2a and the other end connected to the ground. 4 is connected to the other end of the second high-frequency line 2b and the other end is connected to the output terminal 1b. Serial switching element.
The first high-frequency line 2a has an electrical length of (1/4 + M / 2) wavelength at the desired frequency, and the second high-frequency line 2b has an electrical length of (1/4 + N / 2) wavelength at the desired frequency. To be. However, M and N are integers of 0 or more.

次に動作について説明する。
並列スイッチング素子3を開放状態、直列スイッチング素子4を短絡状態にした場合、高周波スイッチは通過状態となる。
並列スイッチング素子3を短絡状態、直列スイッチング素子4を開放状態にした場合、高周波スイッチは遮断状態となる。
Next, the operation will be described.
When the parallel switching element 3 is in an open state and the series switching element 4 is in a short circuit state, the high frequency switch is in a passing state.
When the parallel switching element 3 is short-circuited and the series switching element 4 is open, the high-frequency switch is cut off.

ここで、この発明の実施の形態1による高周波スイッチで、並列スイッチング素子3を短絡状態にしたときの反射位相について考える。伝送路が無損失線路であるとすると、入力端子1aでの反射位相は式4と与えられる。   Here, the reflection phase when the parallel switching element 3 is short-circuited in the high-frequency switch according to Embodiment 1 of the present invention will be considered. If the transmission line is a lossless line, the reflection phase at the input terminal 1a is given by Equation 4.

Figure 2007150520
Figure 2007150520

よって、この式4の両辺を前記f'で微分すると式5となる。ここで例えば、M=0と選ぶと、式5は式6となる。   Therefore, Expression 5 is obtained by differentiating both sides of Expression 4 by f ′. For example, if M = 0 is selected, Expression 5 becomes Expression 6.

Figure 2007150520
Figure 2007150520

したがって、この発明の実施の形態1によれば、並列スイッチング素子を短絡状態にしたとき、周波数の変化に伴う第2の高周波線路のインピーダンスの変化が入力端子の反射位相に影響しないので、その結果、周波数の変化にともなう反射損失の特性の変化が小さい高周波スイッチを得ることができる。   Therefore, according to the first embodiment of the present invention, when the parallel switching element is short-circuited, the change in impedance of the second high-frequency line accompanying the change in frequency does not affect the reflection phase of the input terminal. Thus, a high-frequency switch having a small change in the characteristic of reflection loss accompanying a change in frequency can be obtained.

実施の形態2.
図2はこの発明の実施の形態2による高周波スイッチの構成を示す回路図である。1aは入力端子、1bはm個の出力端子、2aは第1の高周波線路、2bは第2の高周波線路、2cはm個の高周波線路、3は並列スイッチング素子、4はm個の直列スイッチング素子、5は第1の高周波分岐点である。
第1の高周波線路2aは一端が入力端子1aに、他端が第2の高周波線路2bの一端に接続される。並列スイッチング素子3は一端が第1の高周波線路2aの他端に、他端がグランドに接続される。m個の高周波線路2cはそれぞれ一端が第2の高周波線路2bの他端に、他端はそれぞれm個の直列スイッチング素子4それぞれの一端に接続され、m個の高周波線路2cそれぞれの一端と第2の高周波線路2bの他端との接続点が、第1の高周波分岐点5を形成する。m個の直列スイッチング素子4の他端はそれぞれm個の出力端子1bに接続される。
なお、第1の高周波線路2aは所望周波数において(1/4+M/2)波長の電気長に、第2の高周波線路2bは所望周波数において(1/4+N/2)波長の電気長になるようにし、m個の高周波線路2cは所望周波数においてL/2波長の電気長になるようにする。但し、M、N、Lは0以上の整数である。
Embodiment 2. FIG.
FIG. 2 is a circuit diagram showing a configuration of a high-frequency switch according to Embodiment 2 of the present invention. 1a is an input terminal, 1b is m output terminals, 2a is a first high frequency line, 2b is a second high frequency line, 2c is m high frequency lines, 3 is a parallel switching element, 4 is m series switching Element 5 is the first high-frequency branch point.
The first high-frequency line 2a has one end connected to the input terminal 1a and the other end connected to one end of the second high-frequency line 2b. The parallel switching element 3 has one end connected to the other end of the first high-frequency line 2a and the other end connected to the ground. One end of each of the m high-frequency lines 2c is connected to the other end of the second high-frequency line 2b, the other end is connected to one end of each of the m series switching elements 4, and one end of each of the m high-frequency lines 2c A connection point with the other end of the second high-frequency line 2 b forms a first high-frequency branch point 5. The other ends of the m series switching elements 4 are respectively connected to m output terminals 1b.
The first high-frequency line 2a has an electrical length of (1/4 + M / 2) wavelength at the desired frequency, and the second high-frequency line 2b has an electrical length of (1/4 + N / 2) wavelength at the desired frequency. The m high-frequency lines 2c have an electrical length of L / 2 wavelengths at a desired frequency. However, M, N, and L are integers of 0 or more.

次に動作について説明する。
並列スイッチング素子3を開放状態、m個の直列スイッチング素子4のうちいずれか1つを短絡状態にし、前記短絡状態にした直列スイッチング素子を除く(m-1)個の直列スイッチング素子を開放状態にした場合、m個の出力端子1bのうち前記短絡状態にされた1つの直列スイッチング素子に接続された1つの出力端子と入力端子1a間が通過状態になり、前記を除く(m-1)個の出力端子と入力端子1a間は遮断状態になる。
Next, the operation will be described.
The parallel switching element 3 is opened, any one of the m series switching elements 4 is short-circuited, and (m−1) series switching elements are opened except for the short-circuited series switching element. In this case, among the m output terminals 1b, one output terminal connected to the one short-circuited series switching element and the input terminal 1a are in a passing state, and the above (m-1) is excluded. Between the output terminal and the input terminal 1a is cut off.

並列スイッチング素子3を短絡状態にした場合、m個の出力端子1bと入力端子1a間はいずれも遮断状態になる。   When the parallel switching element 3 is short-circuited, the m output terminals 1b and the input terminals 1a are all cut off.

ここで、この発明の実施の形態2による高周波スイッチで、並列スイッチング素子3を短絡状態にしたときの反射位相について考える。伝送路が無損失線路であるとすると、入力端子での反射位相は式7と与えられる。   Here, the reflection phase when the parallel switching element 3 is short-circuited in the high-frequency switch according to the second embodiment of the present invention will be considered. If the transmission path is a lossless line, the reflection phase at the input terminal is given by Equation 7.

Figure 2007150520
Figure 2007150520

よって、この式の両辺を前記f'で微分すると、式7は式8となる。ここで例えば、M=0と選ぶと、式8は式9となる。 Therefore, if both sides of this expression are differentiated by the above f ′, Expression 7 becomes Expression 8. Here, for example, if M = 0 is selected, Expression 8 becomes Expression 9.

Figure 2007150520
Figure 2007150520

したがって、この発明の実施の形態2によれば、並列スイッチング素子3を短絡状態にしたとき、周波数の変化に伴う第2の高周波線路2bおよびm個の高周波線路2cのインピーダンスの変化が入力端子1aの反射位相に影響しないので、その結果、周波数の変化にともなう反射損失の特性の変化が小さい高周波スイッチを得ることができる。   Therefore, according to the second embodiment of the present invention, when the parallel switching element 3 is short-circuited, the impedance change of the second high-frequency line 2b and the m high-frequency lines 2c accompanying the change in frequency is the input terminal 1a. As a result, it is possible to obtain a high-frequency switch that has a small change in reflection loss characteristics due to a change in frequency.

実施の形態3.
図3はこの発明の実施の形態3による高周波スイッチの構成を示す回路図である。この高周波スイッチは、実施の形態2における高周波スイッチにおいて、m=4の場合に立体構造を用いることで第1の高周波分岐点5から見た4個の高周波線路2cが放射状になるように配置されたものである。
Embodiment 3 FIG.
3 is a circuit diagram showing a configuration of a high-frequency switch according to Embodiment 3 of the present invention. This high-frequency switch is arranged so that the four high-frequency lines 2c viewed from the first high-frequency branch point 5 are radial by using a three-dimensional structure when m = 4 in the high-frequency switch in the second embodiment. It is a thing.

図4はこの発明の実施の形態3による高周波スイッチの構成を示す斜視図である。51aは入力端子1aが配置された誘電体基板、51bは各出力端子1bが配置された誘電体基板である。この高周波スイッチは、実施の形態2における高周波スイッチにおいて、m=4の場合に、第1の高周波分岐点5から見た4個の高周波線路2cが放射状になるように配置されたものである。なお、前記高周波線路2a〜2cは誘電体基板51a、51bの裏面をグランドとして高周波信号を伝播させるものであるとする。   4 is a perspective view showing the structure of a high-frequency switch according to Embodiment 3 of the present invention. Reference numeral 51a denotes a dielectric substrate on which the input terminals 1a are arranged, and 51b denotes a dielectric substrate on which the output terminals 1b are arranged. This high-frequency switch is the high-frequency switch according to the second embodiment, and is arranged so that the four high-frequency lines 2c viewed from the first high-frequency branch point 5 are radial when m = 4. The high-frequency lines 2a to 2c propagate high-frequency signals with the back surfaces of the dielectric substrates 51a and 51b as the ground.

実施の形態4.
図5はこの発明の実施の形態4による高周波スイッチの構成を示す回路図である。1aは入力端子、1bはm個の出力端子、2aはm個の第1の高周波線路、2bはm個の第2の高周波線路、3はm個の並列スイッチング素子、4はm個の直列スイッチング素子、5は第1の高周波分岐点である。第1の高周波分岐点5は入力端子1aに接続され、この第1の高周波分岐点5にm個の第1の高周波線路2aの一端が接続される。m個の第1の高周波線路2aの他端にはそれぞれm個の並列スイッチング素子3の一端と、m個の第2の高周波線路2bの一端が接続される。m個の第2の高周波線路2bの他端にはそれぞれm個の直列スイッチング素子4の一端が接続される。m個の直列スイッチング素子4の他端はそれぞれm個の出力端子1bに接続される。
ここで、入力端子1a、第1の高周波線路2a、並列スイッチング素子3、第2の高周波線路2b、直列スイッチング素子4および出力端子1b各々1個ずつの組は単位高周波スイッチを構成する。
またここでは、m=3の例を示した。ここで、第1の高周波線路2aは所望周波数において(1/4+M/2)波長の電気長になるようにする。但し、Mは0以上の整数である。
Embodiment 4 FIG.
FIG. 5 is a circuit diagram showing a configuration of a high-frequency switch according to Embodiment 4 of the present invention. 1a is an input terminal, 1b is m output terminals, 2a is m first high frequency lines, 2b is m second high frequency lines, 3 is m parallel switching elements, and 4 is m series terminals. The switching element 5 is a first high-frequency branch point. The first high-frequency branch point 5 is connected to the input terminal 1 a, and one end of the m first high-frequency lines 2 a is connected to the first high-frequency branch point 5. One end of m parallel switching elements 3 and one end of m second high frequency lines 2b are connected to the other ends of the m first high frequency lines 2a, respectively. One end of each of the m series switching elements 4 is connected to the other end of each of the m second high-frequency lines 2b. The other ends of the m series switching elements 4 are respectively connected to m output terminals 1b.
Here, each set of the input terminal 1a, the first high-frequency line 2a, the parallel switching element 3, the second high-frequency line 2b, the series switching element 4, and the output terminal 1b constitutes a unit high-frequency switch.
Here, an example of m = 3 is shown. Here, the first high frequency line 2a has an electrical length of (1/4 + M / 2) wavelength at a desired frequency. However, M is an integer of 0 or more.

次に動作について説明する。
3個の並列スイッチング素子うち1個を開放状態、他2個の並列スイッチング素子を短絡状態にし、前記開放状態の並列スイッチング素子に接続された第2の高周波線路と出力端子との間に接続された直列スイッチング素子を短絡状態にした場合、短絡状態の直列スイッチング素子に接続された出力端子と入力端子は通過状態になる。
また、短絡状態にされた2個の並列スイッチング素子に接続されたそれぞれの第2の高周波線路と出力端子との間に接続されたそれぞれの直列スイッチング素子を開放状態にした場合、開放状態のそれぞれの直列スイッチング素子に接続されたそれぞれの出力端子と入力端子は遮断状態になる。
図6に、この実施の形態4による高周波スイッチの動作例を示す。
Next, the operation will be described.
One of the three parallel switching elements is open, the other two parallel switching elements are short-circuited, and connected between the second high-frequency line connected to the open parallel switching element and the output terminal. When the serial switching element is short-circuited, the output terminal and the input terminal connected to the short-circuited serial switching element are in the passing state.
In addition, when the respective series switching elements connected between the respective second high-frequency lines connected to the two parallel switching elements that have been short-circuited and the output terminal are opened, The output terminals and input terminals connected to the series switching elements are cut off.
FIG. 6 shows an operation example of the high frequency switch according to the fourth embodiment.

ここで、この発明の実施の形態4による高周波スイッチで、並列スイッチング素子が短絡状態にされ、直列スイッチング素子が開放状態にされた単位高周波スイッチにおける入力端子1aの反射位相について考える。伝送路が無損失線路であるとすると、入力端子1aの反射位相は式10と与えられる。   Here, the reflection phase of the input terminal 1a in the unit high-frequency switch in which the parallel switching element is short-circuited and the series switching element is opened in the high-frequency switch according to the fourth embodiment of the present invention will be considered. If the transmission line is a lossless line, the reflection phase of the input terminal 1a is given by Equation 10.

Figure 2007150520
Figure 2007150520

よって、この式の両辺を前記f'で微分すると、式11となる。ここで例えば、M=0と選ぶと、式11は式12となる。   Therefore, when both sides of this equation are differentiated by f ′, Equation 11 is obtained. Here, for example, if M = 0 is selected, Expression 11 becomes Expression 12.

Figure 2007150520
Figure 2007150520

したがって、この発明の実施の形態4によれば、並列スイッチング素子が短絡状態にされ、直列スイッチング素子が開放状態にされた単位高周波スイッチにおける第2の高周波線路の周波数の変化に伴うインピーダンスの変化が入力端子の反射位相に影響しないので、その結果、周波数の変化にともなう反射損失および通過特性の変化が小さい高周波スイッチを得ることができる。   Therefore, according to the fourth embodiment of the present invention, the impedance change accompanying the change in the frequency of the second high-frequency line in the unit high-frequency switch in which the parallel switching element is short-circuited and the series switching element is open-circuited. Since it does not affect the reflection phase of the input terminal, as a result, it is possible to obtain a high-frequency switch in which the reflection loss and the change in pass characteristics with a change in frequency are small.

実施の形態5.
図7はこの発明の実施の形態5による高周波スイッチの構成を示す回路図である。図において、53は第2の高周波分岐点である。その他の構成は図3に示す実施の形態3と同様であり、同一符号を付して説明を省略する。この実施の形態5による高周波スイッチは、第2の高周波分岐点53を介して図3に示す実施の形態3による高周波スイッチが2個接続されたもので、この高周波スイッチは、単極8投スイッチとしての機能を有する。
Embodiment 5. FIG.
FIG. 7 is a circuit diagram showing a configuration of a high-frequency switch according to Embodiment 5 of the present invention. In the figure, 53 is a second high-frequency branch point. Other configurations are the same as those of the third embodiment shown in FIG. The high-frequency switch according to the fifth embodiment is obtained by connecting two high-frequency switches according to the third embodiment shown in FIG. 3 through a second high-frequency branch point 53. This high-frequency switch is a single-pole eight-throw switch. As a function.

したがって、前述までの説明と同様に、この発明の実施の形態5によれば、周波数の変化にともなう反射損失および通過損失の特性の変化が小さい高周波スイッチを得ることができる。   Therefore, similarly to the above description, according to the fifth embodiment of the present invention, it is possible to obtain a high-frequency switch in which the characteristics of the reflection loss and the passage loss change with the change in frequency are small.

実施の形態6.
図8はこの発明の実施の形態6による高周波スイッチの構成を示す平面図である。55は誘電体基板である。この実施の形態6による高周波スイッチは、実施の形態5による高周波スイッチにおいて、単位高周波スイッチ数nがn=4、各単位高周波スイッチにおける基本スイッチ(スイッチング可能な線路)数mがm=4の場合において第2の高周波分岐点53から見た4個の高周波線路2aが放射状になるように配置されたものである。このとき、前記高周波スイッチは、単極16投スイッチとしての機能を有する。なお、この実施の形態6による高周波線路は誘電体基板の裏面をグランドとして高周波信号を伝播させるものであるとする。
Embodiment 6 FIG.
FIG. 8 is a plan view showing a configuration of a high-frequency switch according to Embodiment 6 of the present invention. Reference numeral 55 denotes a dielectric substrate. The high-frequency switch according to the sixth embodiment is the same as the high-frequency switch according to the fifth embodiment, where the number n of unit high-frequency switches is n = 4 and the number m of basic switches (switchable lines) in each unit high-frequency switch is m = 4. The four high-frequency lines 2a viewed from the second high-frequency branch point 53 are arranged so as to be radial. At this time, the high frequency switch functions as a single pole 16 throw switch. It is assumed that the high-frequency line according to the sixth embodiment propagates a high-frequency signal with the back surface of the dielectric substrate as the ground.

前述までの説明と同様に、この発明の実施の形態6によれば、周波数の変化にともなう反射損失および通過損失の特性の変化が小さい高周波スイッチを得ることができる。   Similar to the above description, according to the sixth embodiment of the present invention, it is possible to obtain a high-frequency switch in which the characteristics of the reflection loss and the passage loss change with the frequency change are small.

図9に、この実施の形態6による単極16投スイッチの反射損失と通過損失の計算結果を示す。中心周波数は60GHzとした。図9と図13を比べることで、この発明の実施の形態6によれば、並列スイッチング素子を備えかつ第1の高周波分岐点からL/2波長(Lは整数)の電気長の位置に直列スイッチング素子を備えたことにより、周波数の変化にともなう通過損失の特性の変化が小さい高周波スイッチを得ることができることがわかる。   FIG. 9 shows the calculation results of the reflection loss and the passage loss of the single-pole 16-throw switch according to the sixth embodiment. The center frequency was 60 GHz. By comparing FIG. 9 and FIG. 13, according to the sixth embodiment of the present invention, a parallel switching element is provided, and the first high-frequency branch point is serially connected to an electrical length position of L / 2 wavelengths (L is an integer). It can be seen that the provision of the switching element makes it possible to obtain a high-frequency switch having a small change in the characteristics of the passage loss due to the change in frequency.

この発明に係る高周波スイッチは、レーダや無線通信機器のRF(Radio Frequency)信号の切り換えに使用する高周波スイッチに適する。   The high frequency switch according to the present invention is suitable for a high frequency switch used for switching an RF (Radio Frequency) signal of a radar or a wireless communication device.

この発明の実施の形態1による高周波スイッチの構成を示す回路図である。It is a circuit diagram which shows the structure of the high frequency switch by Embodiment 1 of this invention. この発明の実施の形態2による高周波スイッチの構成を示す回路図である。It is a circuit diagram which shows the structure of the high frequency switch by Embodiment 2 of this invention. この発明の実施の形態3による高周波スイッチの構成を示す回路図である。It is a circuit diagram which shows the structure of the high frequency switch by Embodiment 3 of this invention. この発明の実施の形態3による高周波スイッチの構成を示す斜視図である。It is a perspective view which shows the structure of the high frequency switch by Embodiment 3 of this invention. この発明の実施の形態4による高周波スイッチの構成を示す回路図である。It is a circuit diagram which shows the structure of the high frequency switch by Embodiment 4 of this invention. この発明の実施の形態4による高周波スイッチの動作例を説明する回路図である。It is a circuit diagram explaining the operation example of the high frequency switch by Embodiment 4 of this invention. この発明の実施の形態5による高周波スイッチの構成を示す回路図である。It is a circuit diagram which shows the structure of the high frequency switch by Embodiment 5 of this invention. この発明の実施の形態6による高周波スイッチの構成を示す平面図である。It is a top view which shows the structure of the high frequency switch by Embodiment 6 of this invention. この発明の実施の形態6による単極16投スイッチの反射損失と通過損失の特性図である。It is a characteristic view of the reflection loss and the passage loss of the single pole 16 throw switch by Embodiment 6 of this invention. 従来の高周波スイッチの構成を示す回路図である。It is a circuit diagram which shows the structure of the conventional high frequency switch. 従来の高周波スイッチにおいて単極16投スイッチを構成した時の回路図である。It is a circuit diagram when the single pole 16 throw switch is comprised in the conventional high frequency switch. 図11において1個のトライステートスイッチのみが短絡状態時の高周信号の流れの説明図である。FIG. 12 is an explanatory diagram of the flow of the high frequency signal when only one tri-state switch is short-circuited in FIG. 従来の単極16投スイッチの反射損失と通過損失の特性図である。It is the characteristic figure of the reflection loss and the passage loss of the conventional single pole 16 throw switch. 他の従来の高周波スイッチの回路図である。It is a circuit diagram of another conventional high frequency switch.

符号の説明Explanation of symbols

1a:入力端子、1b:出力端子、2a:第1の高周波線路、2b:第2の高周波線路、2c:m個の高周波線路、3:並列スイッチング素子、4:直列スイッチング素子、5:第1の高周波分岐点、51a:誘電体基板、51b:誘電体基板、53:第2の高周波分岐点、55:誘電体基板。   1a: input terminal, 1b: output terminal, 2a: first high-frequency line, 2b: second high-frequency line, 2c: m high-frequency lines, 3: parallel switching element, 4: series switching element, 5: first , 51a: dielectric substrate, 51b: dielectric substrate, 53: second high frequency branch point, 55: dielectric substrate.

Claims (7)

入力端子と、
一方が前記入力端子に接続され、所望周波数において(1/4+M/2)波長(Mは整数)の電気長を持つ第1の高周波線路と、
前記第1の高周波線路の他方に接続された並列スイッチング素子と、
一方が前記並列スイッチング素子に接続され、所望周波数において(1/4+N/2)波長(Nは整数)の電気長を持つ第2の高周波線路と、
一方が前記第2の高周波線路の他方に接続された直列スイッチング素子と、
前記直列スイッチング素子の他方に接続された出力端子と
を備えたことを特徴とする高周波スイッチ。
An input terminal;
A first high-frequency line connected to the input terminal and having an electrical length of (1/4 + M / 2) wavelength (M is an integer) at a desired frequency;
A parallel switching element connected to the other of the first high-frequency lines;
A second high-frequency line, one of which is connected to the parallel switching element and having an electrical length of (1/4 + N / 2) wavelength (N is an integer) at a desired frequency;
A series switching element, one connected to the other of the second high-frequency lines;
A high-frequency switch comprising: an output terminal connected to the other of the series switching elements.
入力端子と、
一方が前記入力端子に接続され所望周波数において(1/4+M/2)波長(Mは整数)の電気長を持つ第1の高周波線路と、
前記第1の高周波線路の他方に接続された並列スイッチング素子と、
一方が前記並列スイッチング素子に接続され、所望周波数において(1/4+N/2)波長(Nは整数)の電気長を持つ第2の高周波線路と、
前記第2の高周波線路の他方に接続された第1の高周波分岐点と、
一方が前記第1の高周波分岐点に接続され所望周波数においてL/2波長(Lは整数)の電気長を持つm個(mは2以上の整数)の高周波線路と、
前記m個の高周波線路の他方のそれぞれに一方が接続されたm個の直列スイッチング素子と、
前記m個の直列スイッチング素子の他方のそれぞれに接続されたm個の出力端子と
を備えたことを特徴とする高周波スイッチ。
An input terminal;
A first high-frequency line, one of which is connected to the input terminal and has an electrical length of (1/4 + M / 2) wavelength (M is an integer) at a desired frequency;
A parallel switching element connected to the other of the first high-frequency lines;
A second high-frequency line, one of which is connected to the parallel switching element and having an electrical length of (1/4 + N / 2) wavelength (N is an integer) at a desired frequency;
A first high-frequency branch point connected to the other of the second high-frequency lines;
M (m is an integer of 2 or more) high-frequency lines, one of which is connected to the first high-frequency branch point and has an electrical length of L / 2 wavelengths (L is an integer) at a desired frequency;
M series switching elements, one of which is connected to the other of the m high frequency lines,
A high frequency switch comprising: m output terminals connected to the other of the m series switching elements.
第1の高周波分岐点から見たm個の高周波線路が放射状になるように配置されたことを特徴とする請求項2記載の高周波スイッチ。   3. The high frequency switch according to claim 2, wherein m high frequency lines viewed from the first high frequency branch point are arranged in a radial pattern. 請求項1から3の何れかに記載の高周波スイッチを複数個備え、各高周波スイッチの入力端子を接続して第2の高周波分岐点を形成し、この第2の高周波分岐点に接続された第2の入力端子を備えたことを特徴とする高周波スイッチ。   A plurality of high-frequency switches according to any one of claims 1 to 3 are provided, input terminals of the respective high-frequency switches are connected to form a second high-frequency branch point, and a second high-frequency branch point connected to the second high-frequency branch point A high-frequency switch comprising two input terminals. 第2の高周波分岐点から見た複数個の高周波スイッチが放射状になるように配置されたことを特徴とする請求項4記載の高周波スイッチ。   5. The high-frequency switch according to claim 4, wherein a plurality of high-frequency switches viewed from the second high-frequency branch point are arranged to be radial. 入力端子と、
前記入力端子に接続された高周波分岐点と、
一方を前記高周波分岐点に接続され所望周波数において(1/4+M/2)波長(Mは整数)の電気長を持つ第1のm個の高周波線路と、
前記第1のm個の高周波線路それぞれの他方に接続されたm個の並列スイッチング素子と、
一方を前記m個の並列スイッチング素子それぞれに接続された第2のm個の高周波線路と、
一方を前記第2のm個の高周波線路それぞれの他方に接続されたm個の直列スイッチング素子と、
前記m個の直列スイッチング素子それぞれの他方に接されたm個の出力端子と
を備えたことを特徴とする高周波スイッチ。
An input terminal;
A high-frequency branch point connected to the input terminal;
First m high-frequency lines, one of which is connected to the high-frequency branch point and having an electrical length of (¼ + M / 2) wavelength (M is an integer) at a desired frequency;
M parallel switching elements connected to the other of each of the first m high frequency lines;
A second m high-frequency lines, one of which is connected to each of the m parallel switching elements;
M series switching elements, one connected to the other of each of the second m high frequency lines;
A high frequency switch comprising: m output terminals in contact with the other of the m series switching elements.
一部または全ての第2のm個の高周波線路の電気長が所望周波数において0またはN/2波長(Nは整数)となることを特徴とする請求項6記載の高周波スイッチ。   7. The high frequency switch according to claim 6, wherein the electrical length of some or all of the second m high frequency lines is 0 or N / 2 wavelengths (N is an integer) at a desired frequency.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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JP2002246802A (en) * 2001-02-13 2002-08-30 Mitsubishi Electric Corp Semiconductor switch and phase shift circuit and attenuator
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Publication number Priority date Publication date Assignee Title
JP2009219027A (en) * 2008-03-12 2009-09-24 Mitsubishi Electric Corp High-frequency multi-branch switch

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