JP2007147941A5 - - Google Patents

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Publication number
JP2007147941A5
JP2007147941A5 JP2005341581A JP2005341581A JP2007147941A5 JP 2007147941 A5 JP2007147941 A5 JP 2007147941A5 JP 2005341581 A JP2005341581 A JP 2005341581A JP 2005341581 A JP2005341581 A JP 2005341581A JP 2007147941 A5 JP2007147941 A5 JP 2007147941A5
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JP
Japan
Prior art keywords
focus
monitor mark
pattern
photomask
simulation
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Application number
JP2005341581A
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Japanese (ja)
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JP2007147941A (en
JP4997748B2 (en
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Priority to JP2005341581A priority Critical patent/JP4997748B2/en
Priority claimed from JP2005341581A external-priority patent/JP4997748B2/en
Publication of JP2007147941A publication Critical patent/JP2007147941A/en
Publication of JP2007147941A5 publication Critical patent/JP2007147941A5/ja
Application granted granted Critical
Publication of JP4997748B2 publication Critical patent/JP4997748B2/en
Expired - Fee Related legal-status Critical Current
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Claims (2)

透明基板上にメインパターンが形成されてなる転写有効領域とパターンが形成されていない転写有効領域外とが設けられたフォトマスクであって、前記パターンが形成されていない転写有効領域外にフォーカス位置が制御可能なフォーカスモニターマークを配置したことを特徴とするフォーカスモニターマークを有するフォトマスク。   A photomask provided with a transfer effective area in which a main pattern is formed on a transparent substrate and an area outside the transfer effective area in which no pattern is formed, and a focus position outside the transfer effective area in which the pattern is not formed A photomask having a focus monitor mark, characterized in that a focus monitor mark that can be controlled is arranged. 少なくとも以下の工程を具備することを特徴とする請求項１に記載のフォーカスモニターマークを有するフォトマスクの転写シミュレーション方法。
（ａ）リソグラフィシミュレーション顕微鏡にレベリングステージからなるフォーカス制御システムを付加する工程。
（ｂ）請求項１に記載のフォーカスモニターマークを有するフォトマスクを前記フォーカス制御システムのレベリングステージに載置、保持する工程。
（ｃ）フォーカスモニターマークを用いて、透過光強度のコントラストがピークになるジャストフォーカスを求め、そのジャストフォーカスを示すフォーカスモニターマークの高さ位置を前記フォーカス制御システムの制御手段に保存する工程。
（ｄ）リソグラフィシミュレーション顕微鏡の対物レンズをフォトマスクのメインパターン内に設定された測定対象パターンにＸＹステージにて移動し、前記フォーカス制御システムのレベリングステージにて、測定対象パターンの高さ位置を、フォーカスモニターマークの高さ位置と同じにする工程。
（ｅ）リソグラフィシミュレーション顕微鏡にて測定対象パターンのリソグラフィシミュレーションを行う工程。
（ｆ）（ｄ）及び（ｅ）の工程を必要回数繰り返す工程。 At least transfer simulation method of a photomask having a focus monitor mark according to claim 1, characterized in that it comprises the following steps.
(A) a lithographic simulation step of adding a focus control system comprising a leveling stage microscope.
(B) A step of placing and holding the photomask having the focus monitor mark according to claim 1 on a leveling stage of the focus control system.
(C) A step of obtaining a just focus at which the contrast of transmitted light intensity reaches a peak using the focus monitor mark, and storing the height position of the focus monitor mark indicating the just focus in the control means of the focus control system.
(D) is lithography simulation microscope objective lens moves to the measurement target pattern set in the main pattern of the photomask at the XY stage, in the focus control system of the leveling stage, the height position of the measurement target pattern The process of making it the same as the height position of the focus monitor mark.
(E) lithography sheet lithographic pattern to be measured at simulation microscope step of performing simulation.
(F) A step of repeating the steps (d) and (e) as many times as necessary.
JP2005341581A 2005-11-28 2005-11-28 Photomask transfer simulation method having focus monitor mark Expired - Fee Related JP4997748B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005341581A JP4997748B2 (en) 2005-11-28 2005-11-28 Photomask transfer simulation method having focus monitor mark

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005341581A JP4997748B2 (en) 2005-11-28 2005-11-28 Photomask transfer simulation method having focus monitor mark

Publications (3)

Publication Number Publication Date
JP2007147941A JP2007147941A (en) 2007-06-14
JP2007147941A5 true JP2007147941A5 (en) 2008-09-11
JP4997748B2 JP4997748B2 (en) 2012-08-08

Family

ID=38209422

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005341581A Expired - Fee Related JP4997748B2 (en) 2005-11-28 2005-11-28 Photomask transfer simulation method having focus monitor mark

Country Status (1)

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JP (1) JP4997748B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2006190A (en) 2010-03-11 2011-09-13 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
DE102011079382B4 (en) 2011-07-19 2020-11-12 Carl Zeiss Smt Gmbh Method and device for analyzing and eliminating a defect in an EUV mask

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05257267A (en) * 1992-03-13 1993-10-08 Mitsubishi Electric Corp Photomask protector
US6466315B1 (en) * 1999-09-03 2002-10-15 Applied Materials, Inc. Method and system for reticle inspection by photolithography simulation
JP4109832B2 (en) * 2001-01-24 2008-07-02 株式会社東芝 Exposure mask and focus monitor method
JP3906035B2 (en) * 2001-03-29 2007-04-18 株式会社東芝 Method for controlling semiconductor manufacturing apparatus
JP2003043665A (en) * 2001-08-02 2003-02-13 Sony Corp Method of manufacturing photomask
JP3850746B2 (en) * 2002-03-27 2006-11-29 株式会社東芝 Photomask, focus monitor method, exposure amount monitor method, and semiconductor device manufacturing method
JP2004012779A (en) * 2002-06-06 2004-01-15 Sony Corp Method for inspecting mask and device for inspecting mask defect
JP3854234B2 (en) * 2003-02-24 2006-12-06 株式会社東芝 Focus monitor method and mask

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