JP2007103761A - Film pattern formation method, device manufacturing method, device, electro-optical device and electronic apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method that can suppress bank cracks and can form a good film pattern. <P>SOLUTION: When forming a film pattern by supplying the functional fluid to a substrate, this method consists of a process for forming a bank on the substrate, a process for supplying the functional fluid to an area partitioned by the bank, and a process for burning the bank. To remove liquid repellent materials on the bank surface, burning takes place in a predetermined atmosphere of gas. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

The present invention relates to a film pattern forming method, a device manufacturing method, a device, an electro-optical device, and an electronic apparatus.

As a method for forming a film pattern such as a wiring pattern on a substrate, for example, a droplet discharge method (inkjet) that supplies droplets of a functional liquid onto a substrate by a droplet discharge head as disclosed in the following patent document Law) has been proposed.
Japanese Patent Laid-Open No. 11-274671 JP 2000-216330 A JP 2005-12181 A

When a bank is formed on the substrate in order to suppress the spread of the functional liquid supplied based on the droplet discharge method, a crack may occur in the bank. When a crack occurs in the bank, the film pattern cannot be formed satisfactorily, or the performance of a device having the film pattern may be deteriorated.

This invention is made in view of such a situation, Comprising: It aims at providing the formation method of the film | membrane pattern which suppresses that a crack generate | occur | produces in a bank and can form a film | membrane pattern favorably. To do. It is another object of the present invention to provide a device manufacturing method, a device, an electro-optical device, and an electronic apparatus that manufacture a device using the film pattern forming method.

  In order to solve the above problems, the present invention adopts the following configuration.

According to a first aspect of the present invention, in a method for forming a film pattern by supplying a functional liquid onto a substrate, the step of forming a bank on the substrate, and the functional liquid on a region partitioned by the bank There is provided a method of forming a film pattern, comprising a supplying step and a step of firing the bank, wherein the firing is performed in a predetermined gas atmosphere in order to remove the liquid repellent material on the bank surface.

According to the present invention, it is possible to suppress the occurrence of cracks in the bank by firing the bank in a predetermined gas atmosphere.

In the method of forming a film pattern of the present invention, the treatment for removing the moisture generated in the bank by the firing is performed in order to release the bank from the bank. Thereby, the water | moisture content produced in a bank by baking can be discharge | released smoothly from a bank, and it can suppress that a crack generate | occur | produces in a bank.

In the film pattern forming method of the present invention, the predetermined gas contains hydrogen. Thereby, the liquid-repellent substance on the bank surface can be removed.

In the method for forming a film pattern of the present invention, a treatment for making the bank surface liquid-repellent is performed before supplying the functional liquid. Thereby, the functional liquid can be satisfactorily supplied to the area partitioned by the bank.

In the film pattern forming method of the present invention, after supplying the functional liquid, the bank and the functional liquid are baked together. Thereby, a film pattern and a bank can be formed efficiently.

In the film pattern forming method of the present invention, the functional liquid is supplied onto the substrate using a droplet discharge method. As a result, the process for forming the film pattern can be simplified, and the amount and position of the functional liquid supplied onto the substrate can be favorably controlled.

According to the 2nd viewpoint of this invention, the manufacturing method of the device which has the process of forming a film | membrane pattern on a board | substrate by the formation method of the said description is provided.

  According to the present invention, a device having desired performance can be manufactured.

In the device manufacturing method of the present invention, the film pattern includes at least a part of a switching element. Thereby, a switching element can be formed favorably.

According to a third aspect of the present invention, there is provided a device manufactured using the device manufacturing method described above. According to a fourth aspect of the present invention, there is provided an electro-optical device provided with the device described above. According to a fifth aspect of the present invention, there is provided an electronic apparatus provided with the above electro-optical device.

ADVANTAGE OF THE INVENTION According to this invention, the device, electro-optical apparatus, and electronic device which have desired performance are provided. Here, the electro-optical device includes at least one of a device having an electro-optic effect that changes a light transmittance by changing a refractive index of a substance by an electric field, and a device that converts electric energy into optical energy. Specifically, as an electro-optical device, for example, a liquid crystal display device using liquid crystal as an electro-optical material, an organic EL device using organic EL (Electro-Luminescence) as an electro-optical material, an inorganic EL device using inorganic EL, an electric device Examples thereof include a plasma display device using a plasma gas as an optical substance. Furthermore, examples of the electro-optical device include an electrophoretic display device (EPD: Electrophoretic Display), a field emission display device (FED: Field Emission Display device), and the like.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following description, an XYZ orthogonal coordinate system is set as necessary, and the positional relationship of each member will be described with reference to this XYZ orthogonal coordinate system.

FIG. 1 is a diagram conceptually illustrating an embodiment of a film pattern forming method. The film pattern forming method of this embodiment includes a step of forming a bank B on a substrate P, a step of supplying a functional liquid L to a region partitioned by the bank B, a bank B and a functional liquid L on the substrate P. And a step of firing. The functional liquid L is supplied to the area partitioned by the bank B, and the functional liquid L is dried and baked, whereby the film pattern F is formed on the substrate P. Since the shape of the film pattern F is defined by the bank B, the film pattern F can be miniaturized and thinned by appropriately forming the bank B, for example, by narrowing the width between the adjacent banks B, B. can do. Note that the bank B may be removed from the substrate P after the film pattern F is formed,
It may be left on the substrate P as it is.

As the substrate P, various materials such as glass, quartz glass, Si wafer, plastic film, and metal plate can be used. Furthermore, a semiconductor film, a metal film,
A base film such as a dielectric film or an organic film may be formed.

As a material for forming the bank B (hereinafter referred to as bank material), various materials can be used. For example, an inorganic material whose main component is polysilazane, polysiloxane, polysilane, or the like can be used. When the bank material includes an inorganic material, the heat resistance of the bank B is increased, and the difference in thermal expansion coefficient between the bank B and the substrate P is reduced. Therefore, deterioration of the bank B due to heat or the like during drying of the functional liquid is suppressed, and the film pattern F is formed in a good shape.

In the present embodiment, a material having a siloxane bond as a main chain as disclosed in, for example, Japanese Patent No. 2890893 is used as the bank material. For example, as the bank material, the siloxane bond as the main _{chain, -H, -OH, - (CH} 2 CH 2 O) n H, -C
_{OOH, -COOK, -COONa, -CONH 2} , -SO 3 H, -SO 3 Na, -SO
_{3 K, -OSO 3 H, -OSO} 3 Na, -OSO 3 K, -PO 3 H 2, -PO 3 Na 2,
_{-PO 3 K 2, -NO 2,} -NH 2, -NH 3 Cl, -NH 3 Br, ≡HNCl, and ≡
A material having at least one of NHBr as a side chain can be used. Alternatively, a material having at least one of an alkyl group, an alkenyl group, and an aryl group in a part of the side chain may be used.

As a method for forming the bank B, for example, after forming a layer made of the above-described bank material on the substrate P using various coating methods, CVD methods (chemical vapor deposition methods), etc., a photolithography method or the like is used. A bank B having a predetermined shape can be formed by using a predetermined patterning technique.

Various functional liquids (inks) L can be used. The functional liquid means a film that can form a film having a predetermined function (functional film) by forming a film component contained in the liquid into a film. Such functions include electrical and electronic functions (conductive, insulating, piezoelectric, pyroelectric, dielectric, etc.), optical functions (light selective absorption, reflectivity, polarization, light selective transmission, nonlinear optics) Property, luminescence such as fluorescence or phosphorescence, photochromic property, etc.), magnetic function (hard magnetism,
Soft magnetic, non-magnetic, magnetic permeability, etc.), chemical function (adsorption, desorption, catalytic, water absorption, ionic conductivity, redox, electrochemical properties, electrochromic, etc.), mechanical function (anti-resistance) There are various functions such as wearability, etc., thermal functions (heat transfer, heat insulation, infrared radiation, etc.), and biological functions (biocompatibility, antithrombogenicity, etc.).

In the present embodiment, droplets of the functional liquid L are supplied to a region partitioned by the bank B by using a droplet discharge method (inkjet method). By using the droplet discharge method, it is possible to reduce the waste of the functional liquid compared to other coating techniques such as a spin coating method. Also,
The droplet discharge method can easily control the amount and position of the functional liquid supplied onto the substrate.

In this embodiment, a functional liquid containing a conductive material for forming a wiring pattern is used as the functional liquid L. Thereby, a conductive film pattern can be formed on the substrate. This conductive film pattern is applied to various devices as wiring.

As the functional liquid L for forming the wiring pattern, a dispersion liquid in which conductive fine particles are dispersed in a dispersion medium, an organic silver compound, a solution in which silver oxide nanoparticles are dispersed in a solvent (dispersion medium), or the like can be used. . Examples of the conductive fine particles include metal fine particles containing any one of gold, silver, copper, palladium, and nickel, oxides thereof, and fine particles of conductive polymers and superconductors. These conductive fine particles can be used by coating the surface with an organic substance or the like in order to improve dispersibility. Examples of the coating material that coats the surface of the conductive fine particles include organic solvents such as xylene and toluene, citric acid, and the like.

The particle diameter of the conductive fine particles is preferably 1 nm or more and 0.1 μm or less. If it is larger than 0.1 μm, there is a possibility that clogging may occur in the nozzle of the liquid discharge head described later. Also,
If it is smaller than 1 nm, the volume ratio of the coating agent to the conductive fine particles becomes large, and the ratio of organic substances in the resulting film becomes excessive.

The dispersion medium is not particularly limited as long as it can disperse the above-described conductive fine particles and does not cause aggregation. For example, in addition to water, alcohols such as methanol, ethanol, propanol, butanol, n-heptane, n-octane, decane, dodecane, tetradecane, toluene, xylene, cymene, durene, indene, dipentene, tetrahydronaphthalene, decahydro Hydrocarbon compounds such as naphthalene and cyclohexylbenzene,
Also, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, ethylene glycol methyl ethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol methyl ethyl ether, 1,2
-Ether compounds such as dimethoxyethane, bis (2-methoxyethyl) ether, p-dioxane, propylene carbonate, γ-butyrolactone, N-methyl-2-
Examples include polar compounds such as pyrrolidone, dimethylformamide, dimethyl sulfoxide, and cyclohexanone. Of these, water, alcohols, hydrocarbon compounds, and ether compounds are preferred from the viewpoints of fine particle dispersibility and dispersion stability, and ease of application to the droplet discharge method (inkjet method). More preferred dispersion media include water and hydrocarbon compounds.

The surface tension of the functional liquid is preferably in the range of 0.02 N / m or more and 0.07 N / m or less. When the liquid is discharged by the droplet discharge method, if the surface tension is less than 0.02 N / m, the wettability of the functional liquid with respect to the nozzle surface increases, and thus flight bending easily occurs, resulting in 0.07 N / m.
If it exceeds the upper limit, the shape of the meniscus at the nozzle tip is unstable, and it becomes difficult to control the discharge amount and the discharge timing. In order to adjust the surface tension, a small amount of a surface tension regulator such as a fluorine-based, silicone-based, or nonionic-based material may be added to the functional liquid as long as the contact angle with the substrate is not significantly reduced. Nonionic surface tension modifier improves the wettability of the functional fluid to the substrate,
It improves the leveling property of the functional film and helps prevent the occurrence of fine irregularities in the functional film. The surface tension adjusting agent may contain an organic compound such as alcohol, ether, ester, and ketone, if necessary.

The viscosity of the functional liquid is preferably 1 mPa · s or more and 50 mPa · s or less. When ejecting droplets of functional liquid using the droplet ejection method, if the viscosity is less than 1 mPa · s, the nozzle periphery is easily contaminated by the outflow of the functional liquid, and if the viscosity is greater than 50 mPa · s, the nozzle The frequency of clogging in the holes increases, and it becomes difficult to smoothly discharge droplets.

Examples of the discharge technique of the droplet discharge method include a charge control method, a pressure vibration method, an electromechanical conversion method, an electrothermal conversion method, and an electrostatic suction method. In the charge control method, a charge is applied to a functional liquid with a charging electrode, and the flight direction of the functional liquid is controlled with a deflection electrode to be discharged from a nozzle. In addition, the pressure vibration method is a method in which an ultra-high pressure of about 30 kg / cm ² is applied to the material and the functional liquid is sent to the nozzle tip side. When the control voltage is applied, electrostatic repulsion occurs in the functional liquid, and the functional liquid is scattered and is not discharged from the nozzle. The electromechanical conversion method utilizes the property that a piezoelectric element (piezoelectric element) deforms in response to a pulsed electric signal, and the piezoelectric element is deformed to be flexible in the space where the functional liquid is stored. Pressure is applied through the member, and the functional liquid is pushed out from this space and discharged from the nozzle.

In addition, the electrothermal conversion method is a method in which a functional liquid is rapidly vaporized by a heater provided in a space in which the functional liquid is stored to generate bubbles, and the functional liquid in the space is discharged by the pressure of the bubbles. It is. In the electrostatic attraction method, a minute pressure is applied to the space in which the functional liquid is stored, a meniscus of the functional liquid is formed on the nozzle, and the electrostatic liquid is applied in this state before the functional liquid is drawn out. In addition to this, techniques such as a system that uses a change in the viscosity of the functional liquid due to an electric field, a system that uses a discharge spark, and the like can also be applied. The droplet discharge method has the advantage that the use of the functional liquid is less wasteful and a desired amount of the functional liquid can be accurately supplied to a desired position. In addition, the amount of one drop of the functional liquid discharged by the droplet discharge method is, for example, 1 to 300 nanograms.

FIG. 2 is a perspective view showing a schematic configuration of a droplet discharge device (inkjet device) IJ for supplying a functional liquid onto a substrate. In FIG. 2, the droplet discharge device IJ includes a base 9, a stage 7 provided on the base 9 and capable of supporting the substrate P, and a functional liquid L on the substrate P supported by the stage 7.
Control for controlling the operation of the droplet discharge apparatus IJ, the drive motor 2 for moving the droplet discharge head 1, the drive motor 3 for moving the stage 7, and the droplet discharge apparatus IJ And a device CONT.

The droplet discharge head 1 is a multi-nozzle type droplet discharge head having a plurality of discharge nozzles, and the longitudinal direction and the X-axis direction are made to coincide. The plurality of ejection nozzles are provided on the lower surface of the droplet ejection head 1 at regular intervals along the X-axis direction. The droplet discharge head 1 discharges functional liquid droplets onto the substrate P supported by the stage 7 from the discharge nozzle.

The drive motor 2 is for moving the droplet discharge head 1. An X-axis direction drive shaft 4 is connected to the droplet discharge head 1, and the drive motor 2 can move the droplet discharge head 1 in the X-axis direction by rotating the drive shaft 4.

The drive motor 3 is for moving the stage 7. A Y-axis direction drive shaft 5 is connected to the stage 7, and the drive motor 3 rotates the drive shaft 5 to rotate the stage 7.
Can be moved in the Y-axis direction.

The control device CONT controls the drive motors 2 and 3 to supply droplets onto the substrate P while relatively moving the droplet discharge head 1 and the stage 7 supporting the substrate P.

Further, the droplet discharge device IJ of the present embodiment includes a cleaning mechanism 8. The cleaning mechanism 8 cleans the droplet discharge head 1 and is movable in the Y-axis direction by a drive motor (not shown). The control device CONT moves the cleaning mechanism 8 and the droplet discharge head 1 relatively to bring the cleaning mechanism 8 and the droplet discharge head 1 closer to each other, and uses the cleaning mechanism 8 to move the droplet discharge head 1. Can be cleaned.

Further, the droplet discharge device IJ of this embodiment includes a heater 15 for heat treating the substrate P. The heater 15 can evaporate and dry the solvent contained in the functional liquid on the substrate P, for example.

FIG. 3 is a diagram for explaining the principle of discharging the functional liquid by the piezo method. In FIG.
A piezo element 22 is installed adjacent to the liquid chamber 21 that stores the functional liquid. The functional liquid is supplied to the liquid chamber 21 via a supply system 23 including a tank that stores the functional liquid. The piezo element 22 is connected to a drive circuit 24, and a voltage is applied to the piezo element 22 through the drive circuit 24 to deform the piezo element 22, whereby the liquid chamber 21 is deformed and the functional liquid is discharged from the nozzle 25. Is discharged. In this case, the piezoelectric element 2 is changed by changing the value of the applied voltage.
2 is controlled. Further, the strain rate of the piezo element 22 is controlled by changing the frequency of the applied voltage. Since the droplet discharge by the piezo method does not apply heat to the material, it has an advantage of hardly affecting the composition of the material.

[First Embodiment]
Next, a first embodiment of a film pattern forming method will be described with reference to FIGS. FIG. 4 is a flowchart showing an example of a film pattern forming method according to the present embodiment.
FIG. 6 is a schematic diagram showing a forming procedure. In this embodiment, a case where a wiring pattern is formed will be described as an example.

The wiring pattern forming method according to the present embodiment supplies the functional liquid for forming the wiring pattern described above onto the substrate, and forms a wiring pattern (conductive film) on the substrate. A step of forming a bank corresponding to the wiring pattern; a step of supplying a functional liquid to a region partitioned by the bank; and a step of firing the functional liquid and the bank on the substrate. Before supplying the functional liquid onto the substrate, a treatment for making the bank surface (upper surface) liquid repellent is performed. And after supplying a functional liquid on a board | substrate, in order to remove the liquid repellent material of a bank upper surface, baking is performed in a predetermined gas atmosphere. Hereinafter, each process will be described in detail. In this embodiment, a glass substrate is used as the substrate P.

(Liquid treatment process)
First, as shown in FIG. 5A, before forming the bank, a lyophilic process for making the surface of the substrate P lyophilic is performed (lyophilic process step S1). The lyophilic process is performed so that the functional liquid supplied onto the substrate P can be wetted well on the surface of the substrate P. In the lyophilic treatment, for example, a highly lyophilic film such as TiO ₂ is formed on the surface of the substrate P, or the surface of the substrate P may be made lyophilic by roughening the surface of the substrate P. .

(Bank formation process)
Next, a process of forming a bank on the substrate P is performed. The bank is formed using a predetermined method such as a photolithography method or a printing method. For example, when a photolithography method is used, a film made of a bank material on the substrate P as shown in FIG. 5B by a predetermined method such as spin coating, spray coating, roll coating, die coating, dip coating or the like. 31
Is formed (bank film forming step S2). As described above, the bank material of this embodiment is a material having a siloxane bond as a main chain as disclosed in, for example, Japanese Patent No. 2890893. In the present embodiment, the film 31 is formed by spin coating a bank material.

Then, as shown in FIG. 5C, the bank material is pre-baked (pre-baking step S).
3). Pre-baking is performed by heating at 95 ° C. for 2 minutes using, for example, a hot plate. Thereby, the solvent contained in the film 31 is removed.

Next, as shown in FIG. 5D, the film 31 is exposed using a mask (first exposure step S).
4). A pattern corresponding to the bank to be formed is formed on the mask, and an area on the film 31 corresponding to the mask pattern is irradiated with light for exposure. For example, mask and film 3
1 is irradiated with light. In the present embodiment, a photosensitive material including a material having a siloxane bond as the main chain and a photoacid generator (PAG) is used as the bank material, and light for exposure is irradiated to develop the processing described later. As a result, the bank material can be directly patterned.

(Liquid repellency treatment process)
Next, as shown in FIG. 5E, a lyophobic treatment for lyophobic the surface (upper surface) of the film 31 for forming a bank is performed (a lyophobic treatment step S5). As the lyophobic treatment, for example, a plasma treatment method (CF ₄ plasma treatment method) using tetrafluoromethane as a treatment gas in an air atmosphere can be employed. The processing gas is not limited to tetrafluoromethane (carbon tetrafluoride), and other fluorocarbon gases can also be used. By performing such a liquid repellency treatment, fluorine groups are introduced into the film 31 for forming a bank, and high liquid repellency is imparted to the upper surface of the film 31.

FIG. 7 is a schematic configuration diagram showing an example of a plasma processing apparatus used for CF ₄ plasma processing. The plasma processing apparatus shown in FIG. 7 includes an electrode 142 connected to an AC power source 141 and a table 140 that is a ground electrode. The table 140 is movable in the Y-axis direction while supporting the substrate P. On the lower surface of the electrode 42, two parallel discharge generators 144, 144 extending in the X-axis direction orthogonal to the moving direction are projected, and the discharge generator 144 is provided.
A dielectric member 145 is provided so as to surround. The dielectric member 145 is a discharge generator 144.
Is to prevent abnormal discharge. The lower surface of the electrode 142 including the dielectric member 145 has a substantially planar shape, and a slight space (discharge gap) is formed between the discharge generating portion 144 and the dielectric member 145 and the substrate P. It has become. The center of the electrode 142 has X
A gas ejection port 146 that constitutes a part of the processing gas supply unit that is elongated in the axial direction is provided. The gas ejection port 146 is connected to the gas introduction port 149 via the gas passage 147 inside the electrode and the intermediate chamber 148.

The predetermined gas including the processing gas injected from the gas outlet 146 through the gas passage 147 is:
The dielectric member 145 flows through the space separately in front and rear in the moving direction (Y-axis direction).
The air is exhausted to the outside from the front end and rear end. At the same time, a predetermined voltage is applied from the AC power supply 141 to the electrode 142, and gas discharge is generated between the discharge generators 144 and 144 and the table 140. The excited active species of the predetermined gas is generated by the plasma generated by the gas discharge, and the entire surface of the bank film 31 formed on the substrate P passing through the discharge region is continuously processed.

The predetermined gas includes carbon tetrafluoride (tetrafluoromethane), which is a processing gas, and helium (He), argon (for easily starting and maintaining stable discharge under pressure near atmospheric pressure)
A mixture of a rare gas such as Ar) or an inert gas such as nitrogen (N ₂ ) can be used.

(Development process)
Next, as shown in FIG. 6A, development processing is performed (development step S6). The development processing conditions are: developer: TMAH 2.38%, temperature: 25 ° C., development time: 80 seconds. Thereby, banks B and B are formed, and a recess 34 is formed between the banks B and B.

Next, residual processing between banks B and B is performed as necessary. As the residue treatment, a hydrofluoric acid treatment in which a residue portion is etched with a hydrofluoric acid solution can be employed. In the hydrofluoric acid treatment, the banks B and B function as a mask, and the bank material and the like remaining on the bottom 35 of the recess 34 formed between the banks B and B are removed. As the residue treatment, an ultraviolet light (UV) irradiation treatment for irradiating the bottom 35 of the concave portion 34 with ultraviolet light, an O ₂ plasma treatment using oxygen as a treatment gas in an air atmosphere, or the like can be employed. In addition, a cleaning process using pure water or the like can be performed.

(Functional liquid supply process)
Next, using the droplet discharge apparatus IJ as described with reference to FIG. 2, the functional liquid L for forming the wiring pattern is applied to the region partitioned by the banks B and B on the substrate P, that is, the bank. Supply (discharge) to the recess 34 between B and B (functional liquid supply step S7). In the functional liquid supply step, as shown in FIG. 6B, the functional liquid L containing a material for forming a wiring pattern is discharged as droplets from the droplet discharge head 1. The discharged droplets fill the recesses 34 between the banks B on the substrate P.

Since the recess 34 to which the droplet is supplied is surrounded by the banks B and B, it is possible to prevent the droplet from spreading to other than the predetermined position. In the above-described liquid repellency treatment step, the upper surface of the film 31 (the upper surfaces of the banks B and B) is liquid repellant. Therefore, the recess 3 between the banks B and B
Even if a part of the functional liquid discharged toward the surface 4 is detached from the recess 34 and hits the upper surface of the bank B, it can be repelled on the upper surface of the bank B having liquid repellency and flow into the recess 34. Further, as described above, the liquid repellent property is imparted to the upper surface of the film 31, but the liquid repellent property is not imparted to the inner side surface of the concave portion 34 formed by the development process. The functional liquid supplied to can be wetted well on the inner surface of the recess 34. Further, since the liquid repellency is not imparted to the bottom portion 35, the functional liquid L supplied to the concave portion 34 can satisfactorily fill the entire concave portion 34. Thereby, the area (that is, the recess 34) partitioned by the banks B and B is uniformly filled with the functional liquid.

Next, as shown in FIG. 6C, the entire substrate P is exposed (second exposure step S8).
By performing 2nd exposure process S8 before baking process S9, the dehydration condensation reaction in the bank in baking process S9 can be accelerated | stimulated. Further, the photoacid generator (PAG) remaining in the bank material can be reacted (removed), for example, even when the bank B is colored due to the photoacid generator (PAG). The color can be erased.

(Baking process)
Then, as shown in FIG. 6D, the functional liquid and the bank on the substrate are fired (firing step S).
9). By performing the firing, the functional liquid film on the substrate is made electrically conductive, and the banks B and B are cured.

Firing is performed in a predetermined gas atmosphere. In the present embodiment, the firing is performed in a gas atmosphere containing hydrogen. For example, a baking apparatus 10 as shown in FIG. 8 can be used. The firing apparatus 10 shown in FIG. 8 has a chamber 11 in which the substrate P can be accommodated. The firing apparatus 10 includes a chamber 11, for example, nitrogen gas containing about 1% of hydrogen gas (H ₂ gas: 1%, N ₂ gas: 9
9%) and firing is performed in a nitrogen gas atmosphere containing the hydrogen gas. That is, the firing apparatus 10 performs firing in a reducing gas atmosphere containing hydrogen gas (in a reducing atmosphere). In the present embodiment, the bank B and the functional liquid L supplied onto the substrate P are baked together in a nitrogen gas atmosphere containing about 1% hydrogen gas at 350 degrees for 1 hour.

In addition, before performing baking (main baking) in a predetermined gas atmosphere, for example, a temporary baking may be performed by performing a hot plate or the like. And after performing temporary baking, you may make it perform main baking.

By performing the baking, the solvent (dispersion medium) of the functional liquid is removed, and the film of the functional liquid L on the substrate P is converted into a conductive film pattern F as shown in FIG. . In addition, when the conductive material of the functional liquid L is, for example, an organic silver compound, conductivity is developed by performing heat treatment to remove the organic component of the organic silver compound and leave silver particles. Moreover, even if the conductive material is, for example, nickel or the like, desired conductivity can be exhibited by firing in a reducing atmosphere.

Further, by performing firing in a predetermined gas atmosphere containing hydrogen, the liquid repellent material on the upper surface of the bank B can be removed. As described above, in the liquid repellency treatment step S5, the fluorine group is disposed on the upper surface of the bank B, but the fluorine group on the upper surface of the bank B is removed by firing in a predetermined gas atmosphere. .

As described above, the bank material of the present embodiment is a material having a siloxane bond as a main chain, but water (H ₂ O) can be generated in the bank B by performing a baking treatment (heat treatment). There is sex. That is, there is a possibility that a dehydration condensation reaction occurs by firing and water is generated by the reaction. In this case, as shown in the schematic diagram of FIG. 9A, if a liquid repellent substance such as a fluorine group is present on the upper surface of the bank B, the water generated by the dehydration condensation reaction is There may be situations where it is difficult to be released to the outside. That is, there is a possibility that the release of moisture to the outside of the bank B is blocked by the liquid repellent substance. Then, a crack may occur in the bank B during firing.

In this embodiment, when the bank B is fired, the liquid repellent substance (fluorine group) on the upper surface of the bank B can be removed by firing in a predetermined gas atmosphere containing hydrogen. Therefore, even if water is generated in the bank B by the dehydration condensation reaction by firing, the water is smoothly discharged to the outside through the upper surface of the bank B as shown in the schematic diagram of FIG. Therefore, it is possible to suppress a problem that the bank B is cracked.

Further, when firing, as shown in FIG. 8, firing may be performed while spraying a predetermined gas containing hydrogen from the nozzle 12 to the upper surface of the substrate P (upper surface of the bank B). Further, a supply device that supplies a predetermined gas to the chamber 11 and a discharge device that discharges the gas in the chamber 11 to the outside may be provided, and firing may be performed while supplying and discharging the gas. By doing so, since the fresh gas is sent to the upper surface of the bank B, for example, it is possible to suppress the problem that the fluorine group removed from the upper surface of the bank B adheres to the upper surface of the bank B again.

As described above, the firing is performed in a predetermined gas atmosphere to remove the fluorine group on the upper surface of the bank B, so that moisture generated by the dehydration condensation reaction by firing can be smoothly released from the bank B. . Therefore, the occurrence of cracks in bank B can be suppressed.

The treatment for removing the fluorine group on the upper surface of the bank B includes an operation of irradiating the bank B with ultraviolet light (UV), an operation of performing a plasma treatment on the bank B in an oxygen atmosphere, and cleaning the bank B with ozone water. At least one of the operations of (ozone cleaning) can be used. For example, before firing (or while firing), on the upper surface of the bank B, for example, a wavelength of 17
By irradiating excimer laser light of 2 nm, 185 nm, 254 nm, the fluorine group on the upper surface of the bank B can be removed. Note that in the case of performing plasma processing (O ₂ plasma processing method) using a gas containing oxygen as a processing gas, the plasma processing apparatus described with reference to FIG. 7 can be used. Further, the fluorine group may be removed by a dry etching method, or the fluorine group may be removed by washing with at least one of an acidic solution, an alkaline solution, and pure water.

[Second Embodiment]
Next, a second embodiment will be described with reference to FIG. In the following description, the same or equivalent components as those of the above-described embodiment are denoted by the same reference numerals, and the description thereof is simplified or omitted. The pattern forming method of the present embodiment includes a bank forming process for forming the bank B on the substrate P, and a functional liquid supplying process for supplying the functional liquid L to the linear region A partitioned by the bank B. Yes. The bank forming process is equivalent to the procedure described in the first embodiment.

In the pattern forming method of the present embodiment, the functional liquid L is supplied to the linear region A partitioned by the bank B, and the functional liquid L is dried, for example, to form a linear pattern F on the substrate P. Is done. In this case, since the shape of the pattern F is defined by the bank B,
For example, the pattern F can be made finer or thinner by appropriately forming the bank B, for example, by narrowing the width between the adjacent banks B, B. In this case, the inner side surface of the bank B is preferably in a state of good wettability with respect to the functional liquid L. However, as described above, the inner side surface of the bank B is not liquid-repellent. The functional liquid L can smoothly enter the banks B and B due to capillary action or the like even if the width of is narrowed. After the pattern F is formed,
The bank B may be removed from the substrate P or may be left on the substrate P as it is.

In the pattern forming method of the present embodiment, when the bank B is formed on the substrate P, the width of a part of the linear region A partitioned by the bank B is increased. That is, the linear region A
One or a plurality of portions (hereinafter referred to as wide portions As as required) having a width Wp (Wp> W) wider than the width W of other regions are provided at predetermined positions in the axial direction.

In the pattern forming method of the present embodiment, the width of the linear region A partitioned by the bank B is partially wide (wide portion As).
A part of the functional liquid L is retracted to s, and overflow of the functional liquid L from the bank B is prevented.

In general, when a liquid is disposed in a linear region, it may be difficult for the liquid to flow into the region due to the action of the surface tension of the liquid, or the liquid may not easily spread in the region. On the other hand, in the pattern forming method of the present embodiment, the movement of the liquid in the portion where the line width is different causes the inflow of the functional liquid L into the linear area A or the linear area A. The spread of the functional liquid L at the point B is promoted, and the overflow of the functional liquid L from the bank B is prevented. Needless to say, when the functional liquid L is disposed, the amount of the functional liquid supplied to the linear region A is appropriately set.

Thus, in the pattern forming method of the present embodiment, the bank B at the time of supplying the functional liquid L
As a result, the overflow of the functional liquid L is prevented, so that the pattern F is accurately formed in a desired shape. Therefore, the thin linear pattern F can be stably formed with high accuracy.

Further, in this embodiment, since the bank B is formed by the method described in the first embodiment, only the upper surface of the bank B is made liquid repellent and the inner side surface of the bank B is not made liquid repellent. Can do. For this reason, even when the fine pattern F is formed, the functional liquid L can smoothly enter the banks B and B, and the uniformity of the film is also improved.

Here, in the linear region A partitioned by the bank B, the width Wp of the wide portion As is preferably 110 to 500% of the width W of other portions. Thereby, overflow of the functional liquid from the bank at the time of arrangement of the functional liquid is surely prevented. In addition, it is not preferable that the ratio is less than 110% because the functional liquid may not sufficiently retreat to a wide portion. Also,
If it exceeds 500%, it is not preferable for effective use of the space on the substrate.

The shape of the linear region A is not limited to that shown in FIG. Linear region A
The number and size of the wide portion As, the arrangement position, the arrangement pitch, etc.
Or it sets suitably according to a required precision.

[Third Embodiment]
Next, a third embodiment will be described with reference to FIGS. In FIG. 11, on the substrate P, a bank B is provided with a first groove 34A (wide area) having a first width H1, and a second groove H2 having a second width H2 so as to be connected to the first groove 34A. 34B (narrow region) is formed. The first width H1 is formed larger than the flying diameter of the functional liquid droplet. The second width H2 is narrower than the first width H1. In other words, the second width H2 is the first width.
Width H1 or less. In addition, the first groove portion 34A is formed to extend in the X-axis direction in FIG. 11, and the second groove portion 34B is formed to extend in the Y-axis direction that is different from the X-axis direction. This bank B is formed by the method of the first embodiment.

In order to form the pattern F in the above-described grooves 34A and 34B, first, as shown in FIG. 12A, the droplet of the functional liquid L for forming the pattern F is first discharged by the droplet discharge head 1.
Supply to a predetermined position of the groove 34A. When supplying the liquid droplet of the functional liquid L to the first groove portion 34A, the liquid droplet is ejected from above the first groove portion 34A to the first groove portion 34A using the droplet discharge head 1. In the present embodiment, as shown in FIG. 12A, the droplet of the functional liquid L is transferred to the first groove portion 34.
It arrange | positions at predetermined intervals along the longitudinal direction (X-axis direction) of A. At this time, the liquid droplet of the functional liquid L is in the vicinity of the connection portion 37 where the first groove portion 34A and the second groove portion 34B of the first groove portion 34A are connected (
(Intersection area).

As shown in FIG. 12B, the functional liquid L supplied to the first groove 34A wets and spreads in the first groove 34A by self-flow. Furthermore, the functional liquid L supplied to the first groove 34A is
Due to self-flow, the second groove 34B also spreads wet. Thereby, the functional liquid L can be filled also in the 2nd groove part 34B, without discharging a droplet directly with respect to the 2nd groove part 34B from the 2nd groove part 34B. In this case, it is desirable that the side surface of the bank B is in a state of good wettability with respect to the functional liquid L. However, in this embodiment as well, the inner side surface of the bank B is not liquid repellent. Even if the width is narrowed, the functional liquid L can smoothly enter the banks B and B by capillary action or the like.

Thus, by supplying the functional liquid L to the first groove 34A, the functional liquid L can be filled in the second groove 34B by the self-flow (capillary phenomenon) of the functional liquid L supplied to the first groove 34A. it can. Therefore, even if the liquid droplet of the functional liquid L is not discharged from the bank B to the second groove portion 34B having the narrow width H2, the liquid droplet of the functional liquid L is discharged to the first groove portion 34A having the wide width H1. The functional liquid L can be smoothly supplied to the second groove portion 34B. In particular, even when the width H2 of the second groove 34B is narrow and the diameter of the droplet ejected from the droplet ejection head 1 (the diameter of the droplet during flight) is smaller than the width H2, the self-flow of the functional liquid L Thus, the functional liquid L can be smoothly filled in the second groove portion 34B. And since the width H2 of the 2nd groove part 34B is narrow, the functional liquid L is smoothly supplied to the 2nd groove part 34B by a capillary phenomenon. Therefore, a pattern having a desired shape can be formed. And since the functional liquid L can be smoothly supplied to the 2nd groove part 34B of a narrow width | variety, pattern thinning (miniaturization) is realizable. On the other hand, since the width H1 of the first groove 34A is wide, even if a droplet of the functional liquid L is ejected from the bank B to the first groove 34A, a part of the functional liquid L is applied to the upper surface 38 of the bank B. Can avoid the problem of residue. Therefore, the pattern F exhibiting desired characteristics can be stably formed.

Further, according to the present embodiment, since the functional liquid L is supplied in the vicinity of the connection portion 37 where the first groove portion 34A and the second groove portion 34B are connected in the first groove portion 34A, when the functional liquid L wets and spreads. It can easily flow into the second groove portion 34B, and the functional liquid L can be supplied to the second groove portion 34B more smoothly.

Further, in this embodiment, since the bank B is formed by the method shown in the first embodiment, only the upper surface of the bank B can be made liquid-repellent and the side surface of the bank B can be made non-liquid-repellent. For this reason, even when the fine pattern F is formed, the functional liquid L can smoothly enter the banks B and B, and the uniformity of the film is also improved.

After supplying the functional liquid L to the first groove portion 34A and the second groove portion 34B, the pattern F can be formed by performing a baking process or the like as in the first embodiment described above.

As shown in FIG. 13, the functional liquid L may be supplied as described above after supplying the functional liquid La made of only the functional liquid solvent to the second groove 34B. Thus, the second groove 34
By supplying the functional liquid L to B, the functional liquid L can easily flow into the second groove portion 34B, and the functional liquid L can be more smoothly filled into the second groove portion 34B. The functional liquid La does not have conductivity because it does not contain conductive fine particles. For this reason, the functional liquid L on the bank B
Even if the residue remains, the desired characteristics of the pattern F are not changed.

11 to 13, the extending direction of the first groove portion 34A having the wide width H1 and the extending direction of the second groove portion 34B having the narrow width H2 are different from each other, but as shown in FIG. In addition, the extending direction of the first groove portion 34A having the wide width H1 and the second groove portion 34 having the narrow width H2 are provided.
The extending direction of B may be the same. Even in such a case, as shown in FIG. 14A, by supplying the functional liquid L to the first groove 34A, the functional liquid L self-flows as shown in FIG. L can be filled in the second groove portion 34B. Also,
In this case, the connecting portion 37 between the first groove portion 34A and the second groove portion 34B is connected to the first groove portion 34.
By forming a taper shape that gradually narrows from A toward the second groove 34B, the first groove 3
The functional liquid L supplied to 4A can smoothly flow into the second groove 34B.

<Thin film transistor>
The film pattern forming method of the present invention is applicable when forming a thin film transistor (TFT) as a switching element and wiring connected thereto as shown in FIG. FIG.
5, the gate wiring 40 and the gate wiring 4 are formed on the TFT substrate P having the TFT.
A gate electrode 41 electrically connected to 0, a source wiring 42, a source electrode 43 electrically connected to the source wiring 42, a drain electrode 44, and a pixel electrode 45 electrically connected to the drain electrode 44, It has. The gate wiring 40 is formed to extend in the X-axis direction,
The gate electrode 41 is formed so as to extend in the Y-axis direction. Further, the width H of the gate electrode 41
2 is narrower than the width H 1 of the gate wiring 40. The gate wiring 40 and the gate electrode 41 can be formed by the film pattern forming method described in the above embodiment.

In addition to the TFT (thin film transistor) gate wiring, other components such as a source electrode, a drain electrode, and a pixel electrode can be manufactured by using the film pattern forming method described in the above embodiment. is there. Hereinafter, a method for manufacturing a TFT will be described with reference to FIG.

As shown in FIG. 16A, first, a first-layer bank 611 for providing a groove 611a having a pitch of 1/20 to 1/10 of one pixel pitch is formed on the upper surface of the cleaned glass substrate 610. It is formed using the method of the embodiment.

In the gate scan electrode formation step following the first layer bank formation step, functional liquid droplets containing a conductive material are supplied so as to fill in the groove 611a which is a region partitioned by the bank 611. A gate scan electrode 612 is formed. The gate scanning electrode 612 is formed without protruding from the groove 611a because sufficient liquid repellency is given to the bank 611 in advance.

Through the above steps, a first conductive layer having a flat upper surface including the bank 611 and the gate scan electrode 612 is formed on the substrate 610.

In order to satisfactorily fill the droplets in the groove 611a, as shown in FIG. 16A, a quasi-taper (tapered shape opening toward the discharge source) is adopted as the shape of the groove 611a. Is preferred. As a result, the discharged droplets can be made to enter sufficiently deeply.

Next, as shown in FIG. 16B, a gate insulating film 613, an active layer 610, and a contact layer 609 are successively formed by a plasma CVD method. A silicon nitride film is formed as the gate insulating film 613, an amorphous silicon film is formed as the active layer 610, and an n + type silicon film is formed as the contact layer 609 by changing the source gas and plasma conditions.

In the second layer bank formation step following the semiconductor layer formation step, as shown in FIG.
On the upper surface of the gate insulating film 613, a second-layer bank 614 for forming a groove 614a having a pixel pitch of 1/20 to 1/10 and intersecting the groove 611a is formed based on a photolithography method.

In the source / drain electrode formation step following the second layer bank formation step, the bank 61
As shown in FIG. 16D, a source that intersects with the gate scanning electrode 612 is supplied by supplying a droplet containing a conductive material so as to fill in the groove 614a that is a drawing region divided by 4. An electrode 615 and a source electrode 616 are formed.

In addition, an insulating material 617 is formed so as to fill the groove 614a in which the source electrode 615 and the drain electrode 616 are formed. Through the above steps, a flat upper surface 620 including the bank 614 and the insulating material 617 is formed on the substrate 610.

Then, a contact hole 619 is formed in the insulating material 617, a patterned pixel electrode (ITO) 618 is formed on the upper surface 620, and the drain electrode 616 and the pixel electrode 618 are connected through the contact hole 619. TFT is formed.

<Electro-optical device>
Next, a liquid crystal display device will be described as an example of an electro-optical device. FIG. 17 is a plan view of the liquid crystal display device according to the present embodiment as viewed from the counter substrate side shown together with each component,
18 is a cross-sectional view taken along the line HH ′ of FIG. FIG. 19 is an equivalent circuit diagram of various elements and wirings in a plurality of pixels formed in a matrix in the image display area of the liquid crystal display device, and FIG. 20 is a partial enlarged cross-sectional view of the liquid crystal display device. In each drawing used in the following description, the scale is different for each layer and each member so that each layer and each member can be recognized on the drawing.

17 and 18, the liquid crystal display device (electro-optical device) 100 according to the present embodiment is
A sealing material 52 in which the TFT array substrate 10 and the counter substrate 20 forming a pair are photo-curing sealing materials.
And the liquid crystal 50 is sealed in the region partitioned by the sealing material 52,
Is retained. The sealing material 52 is formed in a frame shape that is closed in a region within the substrate surface, does not include a liquid crystal injection port, and does not have a trace sealed with the sealing material.

A peripheral parting 53 made of a light shielding material is formed in a region inside the region where the sealing material 52 is formed. In the area outside the sealing material 52, the data line driving circuit 201 and the mounting terminals 20 are provided.
2 is formed along one side of the TFT array substrate 10, and the scanning line driving circuit 204 is formed along two sides adjacent to the one side. On the remaining side of the TFT array substrate 10, a plurality of wirings 2 for connecting between the scanning line driving circuits 204 provided on both sides of the image display area.
05 is provided. In at least one corner of the counter substrate 20,
Inter-substrate conducting material 20 for establishing electrical conduction between the TFT array substrate 10 and the counter substrate 20.
6 is disposed.

Instead of forming the data line driving circuit 201 and the scanning line driving circuit 204 on the TFT array substrate 10, for example, a TAB (Tape Automated Bondi) on which a driving LSI is mounted is used.
ng) The substrate and the terminal group formed on the periphery of the TFT array substrate 10 may be electrically and mechanically connected via an anisotropic conductive film. In the liquid crystal display device 100,
The type of liquid crystal 50 to be used, that is, TN (Twisted Nematic) mode, STN (Super T
A phase difference plate, a polarizing plate, and the like are arranged in a predetermined direction according to an operation mode such as a (wisted Nematic) mode and a normally white mode / normally black mode, but the illustration is omitted here.

When the liquid crystal display device 100 is configured for color display, for example, red (R) is formed in a region of the counter substrate 20 facing each pixel electrode (to be described later) of the TFT array substrate 10.
Green (G) and blue (B) color filters are formed together with the protective film.

In the image display area of the liquid crystal display device 100 having such a structure, as shown in FIG. 19, a plurality of pixels 100a are configured in a matrix and these pixels 1
A pixel switching TFT (switching element) 30 is formed in each of 00a, and a data line 6a for supplying pixel signals S1, S2,..., Sn is electrically connected to the source of the TFT 30. Pixel signals S1, S2,..., Sn to be written to the data lines 6a may be supplied line-sequentially in this order, or may be supplied for each group to a plurality of adjacent data lines 6a. . The scanning line 3a is electrically connected to the gate of the TFT 30, and scanning signals G1, G2,..., G are pulsed to the scanning line 3a at a predetermined timing.
It is configured to apply m in a line-sequential order in this order.

The pixel electrode 19 is electrically connected to the drain of the TFT 30, and the pixel signal S1, S2,..., Sn supplied from the data line 6a is obtained by turning on the TFT 30 as a switching element for a certain period. Write to each pixel at a predetermined timing. In this way, pixel signals S1, S2,..., Sn of a predetermined level written to the liquid crystal through the pixel electrode 19
Is held for a certain period between the counter electrode 121 of the counter substrate 20 shown in FIG. In order to prevent the held pixel signals S1, S2,..., Sn from leaking, a storage capacitor 60 is added in parallel with the liquid crystal capacitor formed between the pixel electrode 19 and the counter electrode 121. For example, the voltage of the pixel electrode 19 is held by the storage capacitor 60 for a time that is three orders of magnitude longer than the time when the source voltage is applied. Thereby, the charge retention characteristics are improved, and the liquid crystal display device 100 with a high contrast ratio can be realized.

FIG. 20 is a partially enlarged cross-sectional view of the liquid crystal display device 100 having the bottom gate type TFT 30. The glass substrate P constituting the TFT array substrate 10 is formed by the film pattern forming method as described in the above embodiment. A gate wiring 61 as a conductive film is formed.

A semiconductor layer 63 made of an amorphous silicon (a-Si) layer is stacked on the gate wiring 61 with a gate insulating film 62 made of SiNx interposed therebetween. A portion of the semiconductor layer 63 facing the gate wiring portion is a channel region. On the semiconductor layer 63, junction layers 64a and 64b made of, for example, an n + -type a-Si layer for obtaining an ohmic junction are stacked, and the channel is protected on the semiconductor layer 63 in the central portion of the channel region. S to do
An insulating etch stop film 65 made of iNx is formed. The gate insulating film 62, the semiconductor layer 63, and the etch stop film 65 are patterned as shown in the figure by performing resist coating, photosensitive / developing, and photoetching after vapor deposition (CVD).

Further, the bonding electrodes 64a and 64b and the pixel electrode 19 made of ITO are formed in the same manner, and are patterned as shown in the figure by performing photoetching. Then, on the pixel electrode 19, the gate insulating film 62 and the etch stop film 65, banks 66.
The source line and the drain line can be formed by ejecting silver compound droplets between the banks 66... Using the above-described droplet ejection device IJ.

In the liquid crystal display device according to the present embodiment, the conductive film which is miniaturized and thinned by the film pattern forming method is formed with high accuracy and stability, so that high quality and performance can be obtained.

In the above embodiment, the TFT 30 is used as a switching element for driving the liquid crystal display device 100. However, the present invention can be applied to, for example, an organic EL (electroluminescence) display device in addition to the liquid crystal display device. An organic EL display device has a structure in which a thin film containing a fluorescent inorganic and organic compound is sandwiched between a cathode and an anode, and is excited by injecting electrons and holes into the thin film and recombining them. It is an element that emits light by using light emission (fluorescence / phosphorescence) when a child (exciton) is generated and the exciton is deactivated. Then, on the substrate having the TFT 30 described above, among the fluorescent materials used for the organic EL display element, a material exhibiting each emission color of red, green and blue, that is, a light emitting layer forming material and a hole injection / electron transport layer are provided. A self-luminous full-color EL device can be manufactured by using ink as a material to be formed and patterning each. The range of the device (electro-optical device) in the present invention includes such an organic EL device.

FIG. 21 is a side sectional view of an organic EL device in which some components are manufactured by the droplet discharge device IJ. The schematic configuration of the organic EL device will be described with reference to FIG.

In FIG. 21, the organic EL device 401 includes a substrate 411, a circuit element unit 421, and a pixel electrode 4.
31, bank 441, light emitting element 451, cathode 461 (counter electrode), and sealing substrate 471.
Wiring of flexible substrate (not shown) and driving I
C (not shown) is connected. The circuit element portion 421 is an active element TFT
60 is formed on the substrate 411, and a plurality of pixel electrodes 431 are arranged on the circuit element portion 421. And the gate wiring 61 which comprises TFT60 is formed with the formation method of the wiring pattern of embodiment mentioned above.

Banks 441 are formed in a lattice pattern between the pixel electrodes 431, and light emitting elements 451 are formed in the recess openings 444 generated by the banks 441. Note that the light emitting element 451 includes:
The organic EL device 401 realizes full-color display by including an element that emits red light, an element that emits green light, and an element that emits blue light. The cathode 461 is formed on the entire upper surface of the bank 441 and the light emitting element 451, and a sealing substrate 471 is laminated on the cathode 461.

The manufacturing process of the organic EL device 401 including the organic EL element includes a bank forming process for forming the bank 441, a plasma processing process for appropriately forming the light emitting element 451, and a light emitting element forming process for forming the light emitting element 451. And a counter electrode forming step of forming the cathode 461 and a sealing step of sealing and sealing the sealing substrate 471 on the cathode 461.

In the light emitting element formation step, the hole injection layer 452 is formed over the recess opening 444, that is, the pixel electrode 431.
The light emitting element 451 is formed by forming the light emitting layer 453 and includes a hole injection layer forming step and a light emitting layer forming step. The hole injection layer forming step includes a first discharge step of discharging a functional liquid for forming the hole injection layer 452 onto each pixel electrode 431, and drying the discharged functional liquid to form a hole injection layer. 1st drying process which forms 452. In the light emitting layer forming step, the functional liquid for forming the light emitting layer 453 is discharged onto the hole injection layer 452, and the discharged functional liquid is dried to form the light emitting layer 453. A second drying step. The light emitting layer 453 is formed of three types of materials corresponding to the three colors of red, green, and blue. Therefore, in the second discharge step, the three types of materials are respectively used. There are three steps for discharging.

In this light emitting element forming step, the droplet discharge device IJ can be used in the first discharging step in the hole injection layer forming step and the second discharging step in the light emitting layer forming step.

FIG. 22 is a diagram showing another embodiment of the liquid crystal display device. A liquid crystal display device (electro-optical device) 901 illustrated in FIG. 22 includes a color liquid crystal panel (electro-optical panel) 902 and a circuit board 903 connected to the liquid crystal panel 902. Further, an illumination device such as a backlight and other incidental devices are attached to the liquid crystal panel 902 as necessary.

The liquid crystal panel 902 includes a pair of substrates 905a and 905b bonded by a sealant 904, and liquid crystal is sealed in a gap formed between the substrates 905b and 905b, a so-called cell gap. . These substrate 905a and substrate 905b are:
In general, it is formed of a translucent material such as glass or synthetic resin. Substrate 905a
A polarizing plate 906a and a polarizing plate 906b are attached to the outer surface of the substrate 905b. In FIG. 22, the polarizing plate 906b is not shown.

An electrode 907a is formed on the inner surface of the substrate 905a, and an electrode 907b is formed on the inner surface of the substrate 905b. These electrodes 907a and 907b are formed in stripes or letters, numbers, or other appropriate patterns. Also, these electrodes 90
7a and 907b are formed of a translucent material such as ITO, for example. Substrate 905a
Has a protruding portion protruding from the substrate 905b, and a plurality of terminals 9 are provided in the protruding portion.
08 is formed. These terminals 908 are formed simultaneously with the electrode 907a when the electrode 907a is formed over the substrate 905a. Therefore, these terminals 908 are made of, for example, ITO. These terminals 908 include one that extends integrally from the electrode 907a and one that is connected to the electrode 907b via a conductive material (not shown).

On the circuit board 903, a semiconductor element 900 as a liquid crystal driving IC is mounted at a predetermined position on the wiring board 909. Although not shown, a resistor, a capacitor, and other chip components may be mounted at predetermined positions other than the portion where the semiconductor element 900 is mounted. The wiring substrate 909 is manufactured by forming a wiring pattern 912 by patterning a metal film such as Cu formed on a flexible base substrate 911 such as polyimide.

In the present embodiment, the electrodes 907a and 907b and the circuit board 90 in the liquid crystal panel 902 are used.
3 is formed by the film pattern forming method as described in the above embodiment.

Note that the above-described example is a passive liquid crystal panel, but an active matrix liquid crystal panel may be used. That is, a thin film transistor (TFT) is formed on one substrate, and a pixel electrode is formed for each TFT. In addition, wirings (gate wirings and source wirings) that are electrically connected to the TFTs can be formed using the inkjet technique as described above. On the other hand, a counter electrode or the like is formed on the opposing substrate. The present invention can also be applied to such an active matrix liquid crystal panel.

Moreover, as a device (electro-optical device) according to the present invention, in addition to the above, a current is passed in parallel to the film surface through a PDP (plasma display panel) or a small-area thin film formed on a substrate, The present invention can also be applied to a surface conduction electron-emitting device that utilizes a phenomenon in which electron emission occurs.

<Electronic equipment>
Next, specific examples of electronic devices will be described. FIG. 23A is a perspective view illustrating an example of a mobile phone. In FIG. 23A, reference numeral 600 denotes a mobile phone main body, and reference numeral 601 denotes a liquid crystal display unit including the liquid crystal display device of the above-described embodiment.

FIG. 23B is a perspective view illustrating an example of a portable information processing device such as a word processor or a personal computer. In FIG. 23B, reference numeral 700 denotes an information processing apparatus, 701 denotes an input unit such as a keyboard, 703 denotes an information processing main body, and 702 denotes a liquid crystal display unit provided with, for example, the liquid crystal display device of the above embodiment.

FIG. 23C is a perspective view illustrating an example of a wristwatch-type electronic device. In FIG. 23C, reference numeral 800 denotes a watch body, and reference numeral 801 denotes a liquid crystal display unit including the liquid crystal display device of the above-described embodiment.

Since the electronic devices shown in FIGS. 23A to 23C include the display device of the above embodiment, high quality and performance can be obtained.

In addition, although the electronic device of this embodiment shall be provided with a liquid crystal display device, it can also be set as the electronic device provided with other electro-optical devices, such as an organic electroluminescent display device and a plasma type display device.

Next, an example in which the film pattern formed by the film pattern forming method of the present invention is applied to an antenna circuit will be described.

FIG. 24 shows a non-contact type card medium according to the present embodiment.
0 includes a semiconductor integrated circuit chip 408 and an antenna circuit 412 in a housing made up of a card base 402 and a card cover 418, and is supplied with power or data by at least one of an external transmitter / receiver (not shown) and electromagnetic waves or capacitive coupling. At least one of giving and receiving is performed.

In the present embodiment, the antenna circuit 412 is formed based on the film pattern forming method as described in the above embodiment. Therefore, the antenna circuit 412 is miniaturized and thinned, and high quality and performance can be obtained.

The preferred embodiment of the present invention has been described above with reference to the accompanying drawings.
It goes without saying that the present invention is not limited to such examples. Various shapes, combinations, and the like of the constituent members shown in the above-described examples are examples, and various modifications can be made based on design requirements and the like without departing from the spirit of the present invention.

It is a figure which shows notionally the formation method of a film | membrane pattern. It is a schematic perspective view of a droplet discharge device. It is a figure for demonstrating the discharge principle of the functional liquid by a piezo method. It is a flowchart figure for demonstrating the formation method of the film | membrane pattern which concerns on 1st Embodiment. It is process drawing which shows the formation procedure of a film | membrane pattern. FIG. 6 is a process diagram following FIG. 5. It is a figure for demonstrating an example of a plasma processing apparatus. It is a figure for demonstrating an example of a baking apparatus. It is a schematic diagram for demonstrating the effect | action of 1st Embodiment. It is a figure for demonstrating the formation method of the film | membrane pattern which concerns on 2nd Embodiment. It is a figure for demonstrating the formation method of the film pattern which concerns on 3rd Embodiment. It is a figure for demonstrating the formation method of the film | membrane pattern which concerns on 3rd Embodiment. It is a figure for demonstrating the formation method of the film pattern which concerns on 3rd Embodiment. It is a figure for demonstrating the formation method of the film | membrane pattern which concerns on 4th Embodiment. It is a schematic diagram which shows an example of the board | substrate which has a thin-film transistor. It is a figure for demonstrating the process of manufacturing a thin-film transistor. It is the top view which looked at the liquid crystal display device from the counter substrate side. It is sectional drawing which follows the H-H 'line | wire of FIG. It is an equivalent circuit diagram of a liquid crystal display device. It is a partial expanded sectional view of a liquid crystal display device. It is a partial expanded sectional view of an organic EL device. It is a figure which shows the other form of a liquid crystal display device. It is a figure which shows the specific example of the electronic device of this invention. It is a disassembled perspective view of a non-contact type card medium.

Explanation of symbols

B ... Bank, F ... Film pattern, L ... Functional liquid, P ... Substrate, 30 ... Switching element, 31
... Film, 34 ... Recess, 100 ... Liquid crystal display device, 400 ... Non-contact card medium

Claims (11)

In a method of forming a film pattern by supplying a functional liquid onto a substrate,
Forming a bank on the substrate;
Supplying the functional liquid to an area partitioned by the bank;
Firing the bank,
A method of forming a film pattern, wherein the baking is performed in a predetermined gas atmosphere in order to remove the liquid repellent material on the bank surface. The forming method according to claim 1, wherein the firing is performed in a predetermined gas atmosphere in order to release moisture generated in the bank by the firing.   The forming method according to claim 1, wherein the predetermined gas includes hydrogen. The forming method according to claim 1, wherein a treatment for making the bank surface liquid-repellent is performed before the functional liquid is supplied. The forming method according to claim 1, wherein after supplying the functional liquid, the bank and the functional liquid are baked together. The forming method according to claim 1, wherein the functional liquid is supplied onto the substrate using a droplet discharge method. The manufacturing method of the device which has the process of forming a film | membrane pattern on a board | substrate by the formation method as described in any one of Claims 1-6.   The manufacturing method according to claim 7, wherein the film pattern includes at least a part of a switching element.   A device manufactured using the manufacturing method according to claim 7.   An electro-optical device comprising the device according to claim 9. An electronic apparatus comprising the electro-optical device according to claim 10.

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