JP2007101497A - Probe card - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor inspection apparatus using a probe card and capable of reducing the amount of thermal deformation of the probe card itself, suppressing mechanical deformations such as bending, and improving probe test accuracy. <P>SOLUTION: The probe card uses a polyimide resin having a tensile elastic modulus between 5-15 GPa and a linear expansion coefficient between 1-8 ppm/°C acquired by the reaction between diamines having a benzooxazole skeleton and aromatic tetracarboxylic acids as an insulating material of a probe substrate constituting the probe card. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a contactor or a member called a probe card in which contact elements used for electrical contact between a semiconductor circuit and a test apparatus are inspected when a semiconductor circuit or the like formed on a wafer surface is inspected.

  The manufacturing process of a semiconductor device such as an IC package includes a process from forming an integrated circuit on a wafer (pre-process) to dicing for cutting and dividing each formed semiconductor chip to packaging for attaching an electronic component to a lead. It can be roughly divided into a process (post process). Inspection as a semiconductor device is carried out at the final stage of each process, but in order to reduce costs by detecting defective products at the fewest possible points and not flowing to subsequent processes, In particular, there is a growing emphasis on inspections (hereinafter referred to as probe tests). This inspection in the previous process must be performed in a state in which a large number of semiconductor circuits are formed on the wafer, and as the mass production becomes more efficient, the wafer size increases and the semiconductor chip, that is, the die size decreases. At the same time, the number of circuits to be inspected has increased, and the role of a probe card that serves as an interface between a semiconductor circuit and a computer having an inspection algorithm has been increasing.

Conventionally, the probe test is performed while heating the wafer to about 90 ° C. to 150 ° C. in order to guarantee the operation at the upper limit of the environmental temperature required for the semiconductor chip. As a result, the probe card is also heated together with the wafer and bent by about 50 μm to 500 μm. Conventionally, when the density of the circuit is large and the number of semiconductor chips formed on the wafer is small, the contact failure can be avoided by correcting the deflection by applying pressure to the probe card. As described above, when the density of the circuit is high and the number of semiconductor chips formed on the wafer is increased, if the deflection is corrected by applying pressure to the probe card, the probe position may deviate from the circuit to be inspected. In addition, if it remains bent, there is a problem that a contact failure between the inspection pad of the semiconductor circuit and the probe of the probe card is induced and it is difficult to continue the inspection. It has also been proposed to use a polyimide resin as an insulating material for the probe card (see Patent Document 1), but it is possible to sufficiently suppress the occurrence of mechanical deformation such as bending, particularly mechanical deformation such as bending at high temperatures. There were many cases where it was not possible.
In order to improve these phenomena, for example, measures are taken such as increasing the thickness of the card board constituting the probe card or adding a metal core layer to the card board to provide low thermal expansion and high heat dissipation. However, when the thickness is increased too much, the problem that the reliability of interlayer connection portions such as through-holes decreases due to thermal expansion and contraction in the thickness direction of the substrate has become apparent. Further, since the wiring density of the card substrate itself is increasing, there is a problem that it becomes difficult to provide a through hole or a via hole for connection when the metal core layer is provided. Furthermore, the length of the probe can be shortened, the material can have a high thermal conductivity, the thermal expansion can be reduced, and the block for fixing the probe can also have a high thermal conductivity, a low thermal expansion, etc. However, even with these measures, bending could not be suppressed. In order to solve the above problem, it has been proposed to overheat both surfaces of the probe card (see Patent Document 2). A semiconductor inspection apparatus using these probe cards is also known (see Patent Document 3).

Japanese Patent Laid-Open No. 10-185952 JP 2000-138268 A JP 2002-267687 A

  The present invention reduces the amount of thermal deformation of the probe card itself by using polyimide with specific physical properties as the insulating material of the probe card, and does not add a complicated method such as heating both the front and back surfaces of the probe card. An object of the present invention is to provide a semiconductor inspection apparatus using a probe card that can improve the accuracy of a probe test that can be solved.

That is, this invention consists of the following structures.
1. A probe card comprising at least a probe board and a card board, provided with a probe for electrically connecting a device under test such as a wafer on which a semiconductor circuit is formed and a board of a test apparatus. Tensile modulus obtained by reacting diamines having a benzoxazole skeleton and aromatic tetracarboxylic acid anhydride as an insulating material of the probe substrate for regulating the position of the probe pin of the card, and a linear expansion coefficient is 5 to 15 GPa. 1. A probe card using a 1-8 ppm / ° C. polyimide resin.

  As schematically shown in FIG. 1, the probe card of the present invention is mainly composed of a card substrate and a probe substrate, and has a benzoxazole skeleton as an insulating material of the probe substrate constituting the probe card. A polyimide resin (film) having a tensile modulus of elasticity of 5 to 15 GPa and a linear expansion coefficient of 1 to 8 ppm / ° C. obtained by reacting diamines with aromatic tetracarboxylic anhydrides is this polyimide. (Film) has a small coefficient of linear expansion, which is almost the same as that of silicon. In addition, the film has excellent homogeneity, the physical property difference between the front and back, the physical property difference at the center and the edge of the film is small, and the resulting probe board has a small amount of thermal deformation, and the probe pin tip at the time of the card board deformation The high accuracy of the position makes it possible to perform burn-in tests stably. Therefore, the probe card itself has a small amount of thermal deformation and does not require complicated methods such as heating both the front and back sides of the probe card. This is extremely significant for semiconductor inspection and the like.

The probe card according to the present invention is provided with a probe that contacts the electrode portion of the wafer on the surface of a wiring board having a multilayer structure. The probe card is configured by combining a card substrate mainly responsible for wiring and a probe substrate for holding a probe.
The configuration of the probe card in the present invention is schematically shown in FIG. The semiconductor wafer to be inspected is fixed to the wafer holding table with a vacuum chuck or an adhesive tape for temporary fixing, with the surface to be inspected as the front.
On the other hand, a probe for making contact with the electrode on the wafer inspection surface is held on the card substrate via a probe substrate.
In the present invention, the probe is not particularly limited, and a known probe may be used. In other words, needles, blades, pogo pins, styluses and pads made of conductors, bumps, etc. made of metal or high conductor are used for the contact portion, and contact pressure uses the inherent elasticity of the material, or leaf spring, coil spring, torsion spring Etc. can be used.
In the example, it is attached to the card substrate via a pin block and a probe substrate, but such attachment means is not particularly limited, and appropriate means may be used as appropriate according to the probe type.
The feature of the present invention is that the insulating material of the probe substrate constituting the probe card has a tensile elastic modulus of 5 to 15 GPa and a linear expansion coefficient of 1 to 8 ppm / of a diamine having a benzoxazole skeleton and an aromatic tetracarboxylic acid. This is because a polyimide resin (film, etc.) at 0 ° C. was used.
The polyimide resin obtained by polycondensation (hereinafter also referred to as polymerization) of the diamine having a benzoxazole structure of the present invention and an aromatic tetracarboxylic acid is an aromatic diamine having a benzoxazole structure, for example, if it is a film. A polyamic acid solution obtained by polycondensation of a polymer and an aromatic tetracarboxylic acid in a solvent is cast on a support and dried to form a film (green film or precursor) which is self-supporting polyamic acid. Body film), which is obtained by a method in which the film is subjected to high temperature treatment to imidize to form a polyimide film.

  Specific examples of the diamine having a benzoxazole structure suitably used for the polyimide resin used for the insulating material of the probe substrate of the probe card of the present invention include the following.

Among these, amino (aminophenyl) benzoxazole isomers are preferable from the viewpoint of ease of synthesis. Here, “each isomer” refers to each isomer in which two amino groups of amino (aminophenyl) benzoxazole are determined according to the coordination position (eg, the above “formula 1” to “formula 4”). Each compound described in the above. These diamines may be used alone or in combination of two or more.
In the present invention, it is preferable to use 70 mol% or more of the aromatic diamine having the benzoxazole structure.

The present invention is not limited to the above items, and the following aromatic diamines may be used. Preferably, the diamines do not have the benzoxazole structure exemplified below as long as the total aromatic diamine is less than 30 mol%. Is a polyimide film using one or two or more in combination.
Examples of such diamines include 4,4′-bis (3-aminophenoxy) biphenyl, bis [4- (3-aminophenoxy) phenyl] ketone, and bis [4- (3-aminophenoxy) phenyl]. Sulfide, bis [4- (3-aminophenoxy) phenyl] sulfone, 2,2-bis [4- (3-aminophenoxy) phenyl] propane, 2,2-bis [4- (3-aminophenoxy) phenyl] -1,1,1,3,3,3-hexafluoropropane, m-phenylenediamine, o-phenylenediamine, p-phenylenediamine, m-aminobenzylamine, p-aminobenzylamine,

3,3'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, 3,3'-diaminodiphenyl sulfide, 3,3'-diaminodiphenyl sulfoxide, 3,4'-diaminodiphenyl sulfoxide 4,4'-diaminodiphenyl sulfoxide, 3,3'-diaminodiphenyl sulfone, 3,4'-diaminodiphenyl sulfone, 4,4'-diaminodiphenyl sulfone, 3,3'-diaminobenzophenone, 3,4'- Diaminobenzophenone, 4,4′-diaminobenzophenone, 3,3′-diaminodiphenylmethane, 3,4′-diaminodiphenylmethane, 4,4′-diaminodiphenylmethane, bis [4- (4-aminophenoxy) phenyl] methane, 1 , 1-Bi [4- (4-aminophenoxy) phenyl] ethane, 1,2-bis [4- (4-aminophenoxy) phenyl] ethane, 1,1-bis [4- (4-aminophenoxy) phenyl] propane, 1 , 2-bis [4- (4-aminophenoxy) phenyl] propane, 1,3-bis [4- (4-aminophenoxy) phenyl] propane, 2,2-bis [4- (4-aminophenoxy) phenyl ]propane,

1,1-bis [4- (4-aminophenoxy) phenyl] butane, 1,3-bis [4- (4-aminophenoxy) phenyl] butane, 1,4-bis [4- (4-aminophenoxy) Phenyl] butane, 2,2-bis [4- (4-aminophenoxy) phenyl] butane, 2,3-bis [4- (4-aminophenoxy) phenyl] butane, 2- [4- (4-aminophenoxy) Phenyl] -2- [4- (4-aminophenoxy) -3-methylphenyl] propane, 2,2-bis [4- (4-aminophenoxy) -3-methylphenyl] propane, 2- [4- ( 4-aminophenoxy) phenyl] -2- [4- (4-aminophenoxy) -3,5-dimethylphenyl] propane, 2,2-bis [4- (4-aminophenoxy) -3,5-dimethylphen Le] propane, 2,2-bis [4- (4-aminophenoxy) phenyl] -1,1,1,3,3,3-hexafluoropropane,

1,4-bis (3-aminophenoxy) benzene, 1,3-bis (3-aminophenoxy) benzene, 1,4-bis (4-aminophenoxy) benzene, 4,4′-bis (4-aminophenoxy) ) Biphenyl, bis [4- (4-aminophenoxy) phenyl] ketone, bis [4- (4-aminophenoxy) phenyl] sulfide, bis [4- (4-aminophenoxy) phenyl] sulfoxide, bis [4- ( 4-aminophenoxy) phenyl] sulfone, bis [4- (3-aminophenoxy) phenyl] ether, bis [4- (4-aminophenoxy) phenyl] ether, 1,3-bis [4- (4-aminophenoxy) ) Benzoyl] benzene, 1,3-bis [4- (3-aminophenoxy) benzoyl] benzene, 1,4-bis [4- (3 Aminophenoxy) benzoyl] benzene, 4,4′-bis [(3-aminophenoxy) benzoyl] benzene, 1,1-bis [4- (3-aminophenoxy) phenyl] propane, 1,3-bis [4- (3-aminophenoxy) phenyl] propane, 3,4'-diaminodiphenyl sulfide,

2,2-bis [3- (3-aminophenoxy) phenyl] -1,1,1,3,3,3-hexafluoropropane, bis [4- (3-aminophenoxy) phenyl] methane, 1,1 -Bis [4- (3-aminophenoxy) phenyl] ethane, 1,2-bis [4- (3-aminophenoxy) phenyl] ethane, bis [4- (3-aminophenoxy) phenyl] sulfoxide, 4,4 '-Bis [3- (4-aminophenoxy) benzoyl] diphenyl ether, 4,4'-bis [3- (3-aminophenoxy) benzoyl] diphenyl ether, 4,4'-bis [4- (4-amino-α) , Α-dimethylbenzyl) phenoxy] benzophenone, 4,4′-bis [4- (4-amino-α, α-dimethylbenzyl) phenoxy] diphenylsulfone, bis 4- {4- (4-aminophenoxy) phenoxy} phenyl] sulfone, 1,4-bis [4- (4-aminophenoxy) phenoxy-α, α-dimethylbenzyl] benzene, 1,3-bis [4- (4-aminophenoxy) phenoxy-α, α-dimethylbenzyl] benzene, 1,3-bis [4- (4-amino-6-trifluoromethylphenoxy) -α, α-dimethylbenzyl] benzene, 1,3 -Bis [4- (4-amino-6-fluorophenoxy) -α, α-dimethylbenzyl] benzene, 1,3-bis [4- (4-amino-6-methylphenoxy) -α, α-dimethylbenzyl Benzene, 1,3-bis [4- (4-amino-6-cyanophenoxy) -α, α-dimethylbenzyl] benzene,

3,3′-diamino-4,4′-diphenoxybenzophenone, 4,4′-diamino-5,5′-diphenoxybenzophenone, 3,4′-diamino-4,5′-diphenoxybenzophenone, 3, 3'-diamino-4-phenoxybenzophenone, 4,4'-diamino-5-phenoxybenzophenone, 3,4'-diamino-4-phenoxybenzophenone, 3,4'-diamino-5'-phenoxybenzophenone, 3,3 '-Diamino-4,4'-dibiphenoxybenzophenone, 4,4'-diamino-5,5'-dibiphenoxybenzophenone, 3,4'-diamino-4,5'-dibiphenoxybenzophenone, 3,3'- Diamino-4-biphenoxybenzophenone, 4,4′-diamino-5-biphenoxybenzophenone, 3,4 -Diamino-4-biphenoxybenzophenone, 3,4'-diamino-5'-biphenoxybenzophenone, 1,3-bis (3-amino-4-phenoxybenzoyl) benzene, 1,4-bis (3-amino- 4-phenoxybenzoyl) benzene, 1,3-bis (4-amino-5-phenoxybenzoyl) benzene, 1,4-bis (4-amino-5-phenoxybenzoyl) benzene, 1,3-bis (3-amino) -4-biphenoxybenzoyl) benzene, 1,4-bis (3-amino-4-biphenoxybenzoyl) benzene, 1,3-bis (4-amino-5-biphenoxybenzoyl) benzene, 1,4-bis (4-Amino-5-biphenoxybenzoyl) benzene, 2,6-bis [4- (4-amino-α, α-dimethylbenzyl) pheno Si] benzonitrile and some or all of the hydrogen atoms on the aromatic ring in the aromatic diamine are halogen atoms, alkyl groups having 1 to 3 carbon atoms or alkoxyl groups, cyano groups, or alkyl groups or alkoxyl group hydrogen atoms. Examples thereof include aromatic diamines substituted with a halogenated alkyl group having 1 to 3 carbon atoms, partially or entirely substituted with halogen atoms, or alkoxyl groups.

  The aromatic tetracarboxylic acids used in the present invention are, for example, aromatic tetracarboxylic anhydrides. Specific examples of the aromatic tetracarboxylic acid anhydrides include the following.

These tetracarboxylic dianhydrides may be used alone or in combination of two or more.
In the present invention, one or two or more non-aromatic tetracarboxylic dianhydrides exemplified below may be used in combination as long as they are less than 30 mol% of the total tetracarboxylic dianhydrides. Examples of such tetracarboxylic acid anhydrides include butane-1,2,3,4-tetracarboxylic dianhydride, pentane-1,2,4,5-tetracarboxylic dianhydride, and cyclobutanetetracarboxylic acid. Acid dianhydride, cyclopentane-1,2,3,4-tetracarboxylic dianhydride, cyclohexane-1,2,4,5-tetracarboxylic dianhydride, cyclohex-1-ene-2,3 5,6-tetracarboxylic dianhydride, 3-ethylcyclohex-1-ene-3- (1,2), 5,6-tetracarboxylic dianhydride, 1-methyl-3-ethylcyclohexane-3 -(1,2), 5,6-tetracarboxylic dianhydride, 1-methyl-3-ethylcyclohex-1-ene-3- (1,2), 5,6-tetracarboxylic dianhydride 1-ethylcyclohexane -(1,2), 3,4-tetracarboxylic dianhydride, 1-propylcyclohexane-1- (2,3), 3,4-tetracarboxylic dianhydride, 1,3-dipropylcyclohexane- 1- (2,3), 3- (2,3) -tetracarboxylic dianhydride, dicyclohexyl-3,4,3 ′, 4′-tetracarboxylic dianhydride,

Bicyclo [2.2.1] heptane-2,3,5,6-tetracarboxylic dianhydride, 1-propylcyclohexane-1- (2,3), 3,4-tetracarboxylic dianhydride, 1 , 3-Dipropylcyclohexane-1- (2,3), 3- (2,3) -tetracarboxylic dianhydride, dicyclohexyl-3,4,3 ′, 4′-tetracarboxylic dianhydride, bicyclo [2.2.1] Heptane-2,3,5,6-tetracarboxylic dianhydride, bicyclo [2.2.2] octane-2,3,5,6-tetracarboxylic dianhydride, bicyclo [2.2.2] Oct-7-ene-2,3,5,6-tetracarboxylic dianhydride and the like. These tetracarboxylic dianhydrides may be used alone or in combination of two or more.

  The solvent used when polyamic acid is obtained by polycondensation (polymerization) of the aromatic diamine and aromatic tetracarboxylic acid (anhydride) dissolves both the raw material monomer and the resulting polyamic acid. Although it will not specifically limit if it carries out, A polar organic solvent is preferable, for example, N-methyl-2-pyrrolidone, N-acetyl-2-pyrrolidone, N, N-dimethylformamide, N, N-diethylformamide, N, Examples thereof include N-dimethylacetamide, dimethyl sulfoxide, hexamethylphosphoric amide, ethyl cellosolve acetate, diethylene glycol dimethyl ether, sulfolane, and halogenated phenols. These solvents can be used alone or in combination. The amount of the solvent used may be an amount sufficient to dissolve the monomer as a raw material. As a specific amount used, the mass of the monomer in the solution in which the monomer is dissolved is usually 5 to 40% by mass, The amount is preferably 10 to 30% by mass.

Conventionally known conditions may be applied for the polymerization reaction for obtaining the polyamic acid (hereinafter also simply referred to as “polymerization reaction”). As a specific example, in a temperature range of 0 to 80 ° C., 10 Stirring and / or mixing continuously for 30 minutes. If necessary, the polymerization reaction may be divided or the temperature may be increased or decreased. In this case, the order of adding both monomers is not particularly limited, but it is preferable to add aromatic tetracarboxylic acid anhydrides to the solution of aromatic diamines. The mass of the polyamic acid in the polyamic acid solution obtained by the polymerization reaction is preferably 5 to 40% by mass, more preferably 10 to 30% by mass, and the viscosity of the solution is measured with a Brookfield viscometer (25 ° C.). From the viewpoint of the stability of liquid feeding, it is preferably 10 to 2000 Pa · s, and more preferably 100 to 1000 Pa · s.
The reduced viscosity (ηsp / C) of the polyamic acid in the present invention is not particularly limited, but is preferably 3.0 dl / g or more, more preferably 4.0 dl / g or more, and still more preferably 5.0 dl / g or more. preferable.

Vacuum defoaming during the polymerization reaction is effective for producing a high-quality polyamic acid organic solvent solution. Moreover, you may perform superposition | polymerization by adding a small amount of terminal blockers to aromatic diamines before a polymerization reaction. Examples of the end capping agent include compounds having a carbon-carbon double bond such as maleic anhydride. The amount of maleic anhydride used is preferably 0.001 to 1.0 mol per mol of aromatic diamine.
For example, in order to form a polyimide film from the polyamic acid solution obtained by the polymerization reaction, a green film is obtained by coating the polyamic acid solution on a support and drying, and then subjecting the green film to heat treatment And imidation reaction method.

  The support on which the polyamic acid solution is applied is only required to have smoothness and rigidity sufficient to form the polyamic acid solution into a film, and a drum or belt whose surface is made of metal, plastic, glass, porcelain, etc. And the like. Among them, the surface of the support is preferably a metal, more preferably stainless steel that does not rust and has excellent corrosion resistance. The surface of the support may be plated with metal such as Cr, Ni, or Sn. The surface of the support can be mirror-finished or processed into a satin finish as required. Application of the polyamic acid solution to the support includes, but is not limited to, casting from a slit base, extrusion through an extruder, squeegee coating, reverse coating, die coating, applicator coating, wire bar coating, etc. Conventionally known solution coating means can be appropriately used.

  The support on which the polyamic acid solution is applied is only required to have smoothness and rigidity sufficient to form the polyamic acid solution into a film, and a drum or belt whose surface is made of metal, plastic, glass, porcelain, etc. And the like. A method using a polymer film having moderate rigidity and high smoothness is also a preferred embodiment. Among them, the surface of the support is preferably a metal, more preferably stainless steel that does not rust and has excellent corrosion resistance. The surface of the support may be plated with metal such as Cr, Ni, or Sn. The surface of the support can be mirror-finished or processed into a satin finish as required. Application of the polyamic acid solution to the support includes, but is not limited to, casting from a slit base, extrusion through an extruder, squeegee coating, reverse coating, die coating, applicator coating, wire bar coating, etc. Conventionally known solution coating means can be appropriately used.

As an imidization method by high-temperature treatment, a conventionally known imidation reaction can be appropriately used. For example, using a polyamic acid solution that does not contain a ring-closing catalyst or a dehydrating agent, the imidization reaction proceeds by subjecting it to a heat treatment (so-called thermal ring-closing method), or the polyamic acid solution contains a ring-closing catalyst and a dehydrating agent. In order to obtain a polyimide film in which the difference in surface orientation between the front and back surfaces of the polyimide film is small, a chemical ring closing method can be mentioned in which an imidization reaction is performed by the action of the above ring closing catalyst and dehydrating agent. The thermal ring closure method is preferred.
100-500 degreeC is illustrated as a heating maximum temperature of a thermal ring closure method, Preferably it is 200-480 degreeC. When the maximum heating temperature is lower than this range, it is difficult to close the ring sufficiently, and when it is higher than this range, deterioration proceeds and the film tends to become brittle. A more preferable embodiment includes a two-stage heat treatment in which treatment is performed at 150 to 250 ° C. for 3 to 20 minutes and then treatment is performed at 350 to 500 ° C. for 3 to 20 minutes.
In the chemical ring closure method, after the polyamic acid solution is applied to a support, the imidization reaction is partially advanced to form a self-supporting film, and then imidization can be performed completely by heating. In this case, the condition for partially proceeding with the imidization reaction is preferably a heat treatment for 3 to 20 minutes at 100 to 200 ° C., and the condition for allowing the imidization reaction to be completely performed is preferably 200 to 400 ° C. For 3 to 20 minutes.

The timing for adding the ring-closing catalyst to the polyamic acid solution is not particularly limited, and may be added in advance before the polymerization reaction for obtaining the polyamic acid. Specific examples of the ring-closing catalyst include aliphatic tertiary amines such as trimethylamine and triethylamine, and heterocyclic tertiary amines such as isoquinoline, pyridine, and betapicoline. Among them, heterocyclic tertiary amines are mentioned. At least one amine selected from is preferred. Although the usage-amount of a ring-closing catalyst with respect to 1 mol of polyamic acids does not have limitation in particular, Preferably it is 0.5-8 mol.
The timing of adding the dehydrating agent to the polyamic acid solution is not particularly limited, and may be added in advance before the polymerization reaction for obtaining the polyamic acid. Specific examples of the dehydrating agent include aliphatic carboxylic acid anhydrides such as acetic anhydride, propionic anhydride, butyric anhydride, and aromatic carboxylic acid anhydrides such as benzoic anhydride. Among them, acetic anhydride, benzoic anhydride, etc. Acids or mixtures thereof are preferred. Moreover, the usage-amount of the dehydrating agent with respect to 1 mol of polyamic acids is not particularly limited, but is preferably 0.1 to 4 mol. When a dehydrating agent is used, a gelation retarder such as acetylacetone may be used in combination.

Whether it is a thermal cyclization reaction or a chemical cyclization method, the polyimide film precursor film (green film) formed on the support may be peeled off from the support before completely imidizing, You may peel after imidation.
Although the thickness of a polyimide film is not specifically limited, When considering using it for the base substrate for printed wiring boards mentioned later, it is 1-150 micrometers normally, Preferably it is 3-50 micrometers. When used as a stiffener, the thickness is preferably 15 to 150 μm, more preferably 25 to 150 μm, and still more preferably 60 to 150 μm. This thickness can be easily controlled by the amount of the polyamic acid solution applied to the support and the concentration of the polyamic acid solution.

In the polyimide resin of the present invention, for example, in the case of a film-like material, it is usually an unstretched film, but it may be stretched uniaxially or biaxially. Here, the unstretched film refers to a film obtained without intentionally applying a mechanical external force in the surface expansion direction of the film by tenter stretching, roll stretching, inflation stretching, or the like.
The draw ratio is preferably about 1.005 to 1.50 times in the film width direction, and more preferably about 1.005 to 1.30 times. The stretch ratio is 1.000 times to 1.60 times, preferably about 1.005 times to 1.2 times in the longitudinal direction of the film The thickness of the film from the polyimide resin of the present invention is not particularly limited, When used as an insulating material for a probe card, the thickness is preferably 10 to 250 μm.

The linear expansion coefficient (CTE) in the present invention is measured as follows.
<Measurement of linear expansion coefficient of polyimide film>
For the polyimide film to be measured, the stretch rate in the MD direction and TD direction is measured under the following conditions, and the stretch rate / temperature at intervals of 90 ° C. to 100 ° C., 100 ° C. to 110 ° C.,. This measurement was performed up to 400 ° C., and the average value of all measured values from 100 ° C. to 350 ° C. was calculated as CTE (average value). The meanings of the MD direction and the TD direction indicate the flow direction (MD direction; the length direction of the long film) and the width direction (TD direction; the width direction of the long film).
Device name: TMA4000S manufactured by MAC Science
Sample length; 10mm
Sample width: 2 mm
Temperature rise start temperature: 25 ° C
Temperature rising end temperature: 400 ° C
Temperature increase rate: 5 ° C / min
Atmosphere: Argon

Measurements of tensile strength at break, tensile modulus, and tensile elongation at break are as follows.
<Measurement of Tensile Breaking Strength, Tensile Elastic Modulus, and Tensile Breaking Elongation of Polyimide Film>
A test piece was prepared by cutting a polyimide film to be measured into a strip of 100 mm × 10 mm in the MD direction and the TD direction, respectively. Using a tensile tester (manufactured by Shimadzu Corp., Autograph (registered trademark) model name AG-5000A) under the conditions of a tensile speed of 50 mm / min and a distance between chucks of 40 mm, the tensile modulus and tension in each of the MD and TD directions. The breaking strength and tensile breaking elongation were measured.

  EXAMPLES Hereinafter, although an Example and a comparative example are shown and this invention is demonstrated more concretely, this invention is not limited by a following example. In addition, the evaluation method of the physical property in a following example is as follows except having mentioned above.

1. Reduced viscosity of polyamic acid (ηsp / C)
A solution dissolved in N-methyl-2-pyrrolidone (or N, N-dimethylacetamide) so that the polymer concentration was 0.2 g / dl was measured at 30 ° C. with an Ubbelohde type viscosity tube. (When the solvent used for preparing the polyamic acid solution was N, N-dimethylacetamide, the polymer was dissolved using N, N-dimethylacetamide and measured.)

2. The thickness of the polyimide film The thickness was measured using a micrometer (Millitron 1254D manufactured by Fine Reef).

4). Melting point and glass transition temperature of polyimide film For the polyimide film to be measured, differential scanning calorimetry (DSC) is performed under the following conditions, and the melting point (melting peak temperature Tpm) and glass transition point (Tmg) are based on JIS K 7121. Asked.
Device name: DSC3100S manufactured by MAC Science
Pan ： Aluminum pan (non-airtight)
Sample mass: 4mg
Temperature rising start temperature: 30 ° C
Temperature rising end temperature: 600 ° C
Temperature increase rate: 20 ° C / min
Atmosphere: Argon

5. Thermal decomposition temperature of polyimide film A sample obtained by sufficiently drying the polyimide film to be measured was subjected to thermobalance measurement (TGA) under the following conditions, and the temperature at which the mass of the sample decreased by 5% was regarded as the thermal decomposition temperature.
Device name: TG-DTA2000S manufactured by MAC Science
Pan ： Aluminum pan (non-airtight)
Sample mass: 10 mg
Temperature rising start temperature: 30 ° C
Temperature increase rate: 20 ° C / min
Atmosphere: Argon

[Reference Example 1]
The nitrogen inlet tube, the thermometer, the wetted part of the vessel equipped with the stirring rod, and the infusion pipe were replaced with nitrogen in the reaction vessel made of austenitic stainless steel SUS316L, and then 5-amino-2- (p-aminophenyl) ) Snowtex (registered trademark) DMAC-ST30 (Nissan Chemical Co., Ltd.) obtained by adding 223 parts by mass of benzoxazole and 4416 parts by mass of N, N-dimethylacetamide and completely dissolving it, and then dispersing colloidal silica in dimethylacetamide 40.5 parts by mass (including 8.1 parts by mass of silica) and 217 parts by mass of pyromellitic dianhydride are added and stirred at a reaction temperature of 25 ° C. for 24 hours. A was obtained. Ηsp / C of this product was 4.0 dl / g.

[Reference Example 2]
(Preparation of polyamic acid solution)
The liquid contact part of the vessel equipped with a nitrogen introduction tube, a thermometer, a stirring rod, and the pipe for infusion were substituted with nitrogen in the reaction vessel made of austenitic stainless steel SUS316L, and then 200 parts by mass of diaminodiphenyl ether was added. Next, 4170 parts by mass of N-methyl-2-pyrrolidone was added and completely dissolved, and then Snowtex (registered trademark) DMAC-ST30 (manufactured by Nissan Chemical Industries, Ltd.) in which colloidal silica was dispersed in dimethylacetamide. When 40.5 parts by mass (including 8.1 parts by mass of silica) and 217 parts by mass of pyromellitic dianhydride are added and stirred at 25 ° C. for 5 hours, a brown viscous polyamic acid solution B is obtained. Obtained. The reduced viscosity (ηsp / C) was 3.7 dl / g.

[Reference Example 3]
(Preliminary dispersion of inorganic particles)
(Preparation of polyamic acid solution)
The wetted part of the vessel equipped with a nitrogen introduction tube, a thermometer, and a stirring rod, and the infusion piping were substituted with nitrogen in the reaction vessel made of austenitic stainless steel SUS316L, and then 108 parts by mass of phenylenediamine was added. Next, Snowtex (registered trademark) DMAC-ST30 (manufactured by Nissan Chemical Industries, Ltd.), in which 4010 parts by mass of N-methyl-2-pyrrolidone is added and completely dissolved, and then colloidal silica is dispersed in dimethylacetamide. When 40.5 parts by mass (including 8.1 parts by mass of silica) and 292.5 parts by mass of diphenyltetracarboxylic dianhydride are added and stirred at 25 ° C. for 12 hours, a brown viscous polyamic acid solution C was obtained. The reduced viscosity (ηsp / C) was 4.5 dl / g.

[Production Example 1]
The polyamic acid solution A obtained in Reference Example 1 was coated on a non-slip material surface of a polyethylene terephthalate film A-4100 (manufactured by Toyobo Co., Ltd.) using a comma coater (gap: 150 μm, coating width). 1240 mm), and dried at 90 ° C. for 60 minutes. The polyamic acid film that became self-supporting after drying was peeled from the support and cut at both ends to obtain a green film having a thickness of 21 μm and a width of 1200 mm.
A pin sheet in which pins made of carbon steel (height 10 mm) are implanted so that the obtained green film has an inclination angle of 3 to 13 degrees in the lateral direction of film conveyance, and a connex with a thickness of 0.5 mm ( Using a pin tenter having a brush roll obtained by winding a unit brush manufactured by Nihon Unit Co., Ltd., which has a hair material made of (registered trademark) as a film pusher, the green film is projected onto the pin and gripped. The heat treatment was performed.
The heat treatment settings for the tenter are as follows. The first stage was heated at 200 ° C. for 5 minutes and the heating rate was 4 ° C./second, and the second stage was heated at 450 ° C. for 5 minutes under two conditions to proceed the imidization reaction. The maximum wind speed in the tenter was 0.5 m / sec.
Up to the midpoint of the first stage of the tenter, the width of the pins at both ends was reduced by 2% to 98% of the initial width. In the second half of the first stage, the pin width is slightly widened to 99% of the initial width, expanded to 102% in the temperature rise interval, and further expanded to the middle point of the second stage to 103%, and thereafter constant Processed in width. Then, it cooled to room temperature in 5 minutes, the part where the planarity of the both ends of a film was bad was cut off with the slitter, and it rolled up in roll shape, and obtained the polyimide film A which exhibits brown. The physical properties of the obtained film are shown in Table 1.

[Production Example 2]
Using the polyamic acid solution B obtained in Reference Example 2, the same procedure was followed to obtain a polyimide film B. The physical properties of the obtained film are shown in Table 1.

[Production Example 3]
Using the polyamic acid solution C obtained in Reference Example 3, the same procedure was followed to obtain a polyimide film C. The physical properties of the obtained film are shown in Table 1.

<Example 1>
A probe substrate was prepared using the polyimide film obtained in Production Example 1 as an insulating material, and a probe card having a diameter of 400 mm, whose schematic diagram is shown in FIG.
The card substrate is a multilayer substrate using the polyimide film obtained in Production Example 1. In other words, based on a double-sided copper-clad laminated substrate in which a polyimide film is plasma-treated in an active gas and a BT resin adhesive and 18-micron electrolytic copper foil are press-laminated, a general interlayer connection using through-holes is used. Thus, a multi-layer substrate having 12 layers was obtained as a card substrate.
Similarly, a probe substrate was produced using the polyimide film obtained in Production Example 1. That is, 20 polyimide films are laminated and processed into a predetermined size, and a predetermined through hole is formed by NC drilling, and about 512 tungsten-copper probe pins are planted on the card substrate. The probe card was obtained by fixing to the connected part.
Using the obtained probe card as a burn-in tester, attaching a silicon wafer having a diameter of 200 mm to the chuck and performing inspection, the temperature of the inspection atmosphere was changed to 25 ° C., 75 ° C., 100 ° C., 125 ° C., 150 ° C. The difference between the probe pin tip facing the wafer center and the displacement of the probe pin tip facing the wafer edge (position 95 mm away from the center) was measured with a three-dimensional measuring instrument. The results are shown in Table 2.
Here, as the BT resin-based adhesive, GHPL-950K Type SK, a low dielectric constant material for multilayer substrates manufactured by Mitsubishi Gas Chemical Co., Ltd., was used.

<Comparative Example 1>
Using the polyimide film obtained in Production Example 2, a probe substrate and a card substrate were produced in the same manner as in Example 1, and probe pins were similarly installed to obtain a probe card.
The results of measuring the difference in the displacement of the probe pin tip using a burn-in tester as in Example 1 are shown in Table 2.

<Comparative example 2>
Using the polyimide film obtained in Production Example 3, a probe substrate and a card substrate were produced in the same manner as in Example 1, and probe pins were similarly installed to obtain a probe card.
The results of measuring the difference in the displacement of the probe pin tip using a burn-in tester as in Example 1 are shown in Table 2.

表１中、Ｌ側はフィルム作製時のフィルム巻出し側から見てフィルム左側、フィルム中央より５００ｍｍの位置を示し、Ｒ側はフィルム作製時のフィルム巻出し側から見てフィルム右側、フィルム中央より５００ｍｍの位置を示す。

In Table 1, the L side shows the position of the film left side as viewed from the film unwinding side at the time of film production, and the position of 500 mm from the center of the film. A position of 500 mm is shown.

  As described above, the probe card using the probe substrate manufactured using the polyimide resin in the present invention has a smaller thermal deformation of the probe substrate and a smaller displacement of the probe card pin tip. Even with a large-diameter silicon wafer, uniform contact can be obtained, which is extremely effective for stabilizing the burn-in test. The semiconductor inspection apparatus using the probe card of the present invention can inspect semiconductor circuits with high accuracy. .

FIG. 1 is a schematic diagram showing an outline of a semiconductor inspection apparatus of the present invention.

Explanation of symbols

1. Card board 2. Probe board Probe pin 4. 4. Inspected wafer Wafer holder 6. Probe card

Claims (1)

  A probe card comprising at least a probe board and a card board, provided with a probe for electrically connecting a device under test such as a wafer on which a semiconductor circuit is formed and a board of a test apparatus. Tensile modulus obtained by reacting diamines having a benzoxazole skeleton and aromatic tetracarboxylic acid anhydride as an insulating material of the probe substrate for regulating the position of the probe pin of the card, and a linear expansion coefficient is 5 to 15 GPa. 1. A probe card using a 1-8 ppm / ° C. polyimide resin.

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