JP2007096350A - Method for manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent the occurrence of particles which is occurred on a substrate due to a substrate processing which is performed by using a substrate processing apparatus which has a plurality of boats holding a plurality of substrates. <P>SOLUTION: In a method for manufacturing a semiconductor device, the substrate processing apparatus including: boats 6a and 6b holding wafers 4 which are a plurality of substrates; and reactor 20, is used. While processing the wafer 4 held by the boat 6a, within the reactor 20, the wafer 4 which is processed next is transferred to the boat 6b in the outside of the reactor 20 by a transfer machine 14. After films are formed on wafer 4, on boat 6a and within the reactor 20 by the processing in the reactor 20, the temperature within the reactor 20 is lowered less than the temperature TFFM during the substrate processing. Thereafter, the boat 6a which holds the processed wafer 4 is unloaded to the outside of the reactor 20. After raising the temperature within the reactor 20 to the temperature TFFM again, the boat 6b which holds the wafer 4 is loaded into the reactor 20. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for manufacturing a semiconductor device in which a substrate held in a boat is processed in a reaction furnace.

  In a process of manufacturing a semiconductor device such as an IC or LSI, a method of manufacturing a semiconductor device is performed in which a substrate is heated in a reaction furnace and subjected to processing such as oxidation, diffusion, and chemical vapor deposition (CVD). ing.

As an example of the semiconductor device manufacturing method, there is a method in which a substrate is heated in a reaction furnace, and a silicon nitride film (Si ₃ N ₄ film) is formed on the substrate by a CVD method. As a specific example of such a nitride film forming method, a silicon wafer as a substrate is heated in a reaction furnace, and then bis-tertiary butylaminosilane (hereinafter referred to as BTBAS) as a liquid raw material. A nitride film (hereinafter referred to as BTBAS-nitride film) is formed on the wafer by performing a treatment using a gas mixture of vaporized gas (hereinafter abbreviated as BTBAS gas) and ammonia (NH ₃ ). There is a method of forming.

  As an example of a method for forming the BTBAS-nitride film, a method using a plurality of boats for holding wafers as substrates will be described below.

  FIG. 4 shows a reaction furnace portion of a thermal CVD apparatus which is a substrate processing apparatus used in this method. In the figure, 1 is a reaction tube, the reaction tube 1 is composed of a quartz outer tube 1a and a quartz inner tube 1b, 3a is a BTBAS gas outlet, 3b is an ammonia outlet, and 4 is a substrate. The wafer 4 is stacked in the vertical direction and loaded into the boat 6 a, and the boat 6 a is fixed to the center of the reaction furnace 20 on the stainless steel lid 12 via the cap 7. 8 is a heater for heating the inside of the reaction furnace 20, 9a is a BTBAS gas introduction pipe, 9b is an ammonia introduction pipe, 10 is an exhaust port, and 11 is a reaction gas introduction part into the quartz inner tube 1b. 15 is a preliminary exhaust valve, and 16 is a main exhaust valve. The preliminary exhaust valve 15 and the main exhaust valve 16 are connected to an exhaust pump (not shown).

  In the BTBAS-nitride film forming process using the reaction furnace 20 of the substrate processing apparatus shown in FIG. 4, the wafer 4 loaded in the boat 6a is heated by the heater 8 and is nitrided on the surface by reaction with the reaction gas. A film is formed. As the reaction gas, BTBAS gas passes through the BTBAS gas introduction pipe 9a, and is ejected from the BTBAS gas injection port 3a to the reaction gas introduction part 11, and ammonia passes through the ammonia introduction pipe 9b, and the reaction gas introduction part 11 from the ammonia injection port 3b. To erupt. The two gases are mixed in the reaction gas introduction portion 11 to become a reaction gas, rise in the quartz inner tube 1b, react on the surface of the wafer 4 and quartz, and as a result, the surface of the wafer 4 has a BTBAS. -A nitride film is formed. The gas after the reaction descends between the quartz outer tube 1a and the quartz inner tube 1b and reaches the exhaust port 10, from which a preliminary exhaust valve 15, a main exhaust valve 16 and a pump (not shown) are formed. Exhaust by the exhaust system.

  At least two wafer holding boats 6a and 6b are used in the process of processing the wafer 4 as a substrate and forming the BTBAS-nitride film on the wafer 4 using the substrate processing apparatus shown in FIG. The method will be described below.

  FIG. 5 shows each stage from the start of the above process to the second substrate processing. In the figure, reference numeral 1a denotes a quartz outer tube, which represents the reaction furnace 20 in a simplified manner. In the figure, reference numerals 6a and 6b denote two boats for holding wafers, and reference numeral 14 denotes a transfer device for the wafer 4 which also serves as a wafer transfer robot. In the figure, the wafer 4 is simply represented by a horizontal line segment, which is not denoted by reference numeral “4”. When the boat 6a or 6b is in the quartz outer tube 1a, it is assumed that the wafer 4 held in the boat is being processed in the reaction furnace 20. In the figure, A, B, and C indicate the position of the boat outside the reaction furnace, and A is when the wafer 4 is transferred from the substrate storage container to the boat or from the boat to the substrate storage container by the transfer device 14. The position of the boat. B is an elevator position just below the reactor, and the boat is inserted into the reactor from this position by an elevator (not shown) and lowered from the reactor to this position. C is a retreat position where another boat is retracted when one boat is raised or lowered by an elevator.

5A to 5E show the stages from the start of the process to the first substrate processing. First, as shown in (a), the wafer 4 is transferred to the boat 6a at the transfer position A by the transfer machine 14, and the boat 6a is moved to the elevator position B. Next, as shown in (b), the boat 6a at the elevator position B is inserted into the reaction furnace 20 by the elevator, and the above-described film forming process is performed. That is, the BTBAS gas and the NH ₃ gas are sent into the reaction tube 1 through the gas introduction tubes 9a and 9b. The BTBAS gas and NH ₃ introduced into the reaction tube 1 are thermally decomposed to form a BTBAS-nitride film on the wafer 4 in the boat 6a or in the quartz boat 6a or the reaction tube 1. The temperature inside the reaction tube 1 is 600 ° C.

  While the film forming process is being performed, as shown in (c) and (d), the other boat 6b is moved from the retracted position C to the transfer position A, as shown in (e). Then, the wafer 4 is transferred to the boat 6b by the transfer device 14. In this manner, the wafer 4 waiting for the next batch can be held in advance on the bow 6b.

  FIGS. 5F to 5I show stages from the end of the first substrate processing to the second substrate processing. When the processing of the wafers 4 in the boat 6a is completed, the boat 6a is pulled out (unloaded) from the reactor 20 as shown in (f). The unloading temperature is 600 ° C., which is the same as the film forming temperature (substrate processing temperature). When the boat 6a is pulled out (unloaded), the boat 6a is moved to the retreat position C ((f) in FIG. 5). Next, as shown in FIG. 5G, the boat 6b holding the unprocessed wafer 4 is moved from the transfer position A to the elevator position B and inserted into the reaction furnace 20 by the elevator. The same substrate processing (second processing as substrate processing) is performed. While this substrate processing is being performed, as shown in FIG. 5 (h), the boat 6a is moved from the retracted position C to the transfer position A via the elevator position B, and then to (i). As shown, the processed wafer 4 is collected by the transfer device 14, and the wafer 4 before processing is transferred to the boat 6a instead. Since this stage corresponds to the case where the boat 6a and the boat 6b in the stage shown in FIG. 5E are exchanged, after the operation of transferring the wafer 4 before processing to the boat 6a is completed, (f) To (i) (however, the boat is replaced), the third substrate processing is performed. Similarly, the fourth and subsequent substrate treatments can be performed by repeating the operations from (e) to (i).

  A BTBAS-nitride film can be formed on the wafer 4 as a substrate by the above substrate treatment, but particles (particulate irregularities) often appear on the surface of the wafer 4 after such treatment. It is allowed to occur. When the surface of the wafer 4 on which such particles were generated was observed with a scanning electron microscope (SEM), many irregularities were observed on the surface as shown in FIG.

  Since the generation of the particles causes a decrease in the yield of non-defective products in the process after the substrate processing, it is an important practical issue to suppress the generation of the particles.

  The problem to be solved by the present invention is to suppress the generation of particles generated on a substrate by the substrate processing performed using the substrate processing apparatus having a plurality of boats holding a plurality of substrates as described above. is there.

In order to solve the above-mentioned problems, the present invention provides, as described in claim 1,
A substrate processing apparatus having a plurality of boats holding a plurality of substrates is used, and an outgas is generated at the film formation temperature on a substrate held by one of the boats in a reaction furnace having a film formation temperature. While performing the process of forming the film to be generated, the substrate to be processed next time is transferred to the other one of the boats outside the reactor, and the substrate in the reactor is transferred. After the treatment is completed and the film is formed on the substrate, the boat, and the reaction furnace, the temperature in the reaction furnace is lowered below the film formation temperature, and then the processed substrate. The boat that holds the substrate to be processed next time is unloaded to the outside of the reactor where the boat that holds the substrate to be processed exists, the temperature in the reactor is returned to the film formation temperature, and the substrate to be processed next time Loading the retained boat into the reactor Constitute a method for manufacturing a semiconductor device according to claim.

Further, the present invention as described in claim 2,
A substrate processing apparatus having a plurality of boats holding a plurality of substrates is used, and an outgas is generated at the film formation temperature on a substrate held by one of the boats in a reaction furnace having a film formation temperature. During the process of forming the film to be generated, the substrate to be processed next time is transferred to the other one of the boats in the transfer chamber below the reaction furnace, After the processing of the substrate is completed and the film is formed on the substrate, on the boat, and in the reaction furnace, the temperature in the reaction furnace is lowered below the film formation temperature, and then the processing is performed. The boat holding the subsequent substrate is unloaded from the reaction furnace to the transfer chamber where the boat holding the substrate to be processed next time is present, and the temperature in the reaction furnace is returned to the film formation temperature. The boat holding the substrate to be processed next time Loading the serial reactor constituting the method of manufacturing a semiconductor device according to claim.

Further, the present invention as described in claim 3,
Using a substrate processing apparatus having a plurality of boats for holding a plurality of substrates, and using a tertiary butyl amino silane on a substrate held by one of the boats in a reaction furnace at a film forming temperature. During the process of forming the film, the substrate to be processed next time is transferred to the other one of the boats in the transfer chamber below the reaction furnace, and the substrate in the reaction furnace is transferred. After the processing is completed, after the film is formed on the substrate, the boat, and the reaction furnace, the temperature in the reaction furnace is lowered below the film formation temperature, The boat holding the substrate is unloaded from the reaction furnace to the transfer chamber in which the boat holding the substrate to be processed next is present, and the temperature in the reaction furnace is returned to the film formation temperature, and then the next time The board holding the substrate to be processed The semiconductor device manufacturing method is characterized in that a catalyst is loaded into the reactor.

Further, the present invention as described in claim 4,
4. The method of manufacturing a semiconductor device according to claim 3, wherein the process is a process of forming a silicon nitride film on a substrate using bis-tertiary butyl amino silane and ammonia.

Further, the present invention as described in claim 5,
Using a substrate processing apparatus having a plurality of boats for holding a plurality of substrates, water, hydrogen at the film formation temperature on a substrate held in one of the boats in a reaction furnace having a film formation temperature The substrate to be subjected to the next processing is transferred to the other one of the boats outside the reaction furnace while performing the processing to form a film in which the outgas is generated as a main component. After the processing of the substrate in the reaction furnace is completed and the film is formed on the substrate, the boat, and the reaction furnace, the temperature in the reaction furnace is lowered below the film formation temperature. Later, the boat holding the processed substrate is unloaded to the outside of the reactor where the boat holding the substrate to be processed next is present.

  By implementing the present invention, it is possible to suppress the generation of particles on a substrate by substrate processing performed using a substrate processing apparatus having a plurality of boats holding a plurality of substrates.

  In the present invention, a substrate processing apparatus having a plurality of boats for holding a plurality of substrates is used, a substrate held in one of the boats is processed in a reaction furnace, and the processing of the substrate is completed. Then, after the temperature in the reaction furnace is lowered from the temperature at the time of substrate processing, the boat holding the processed substrate is unloaded to the outside of the reaction furnace.

  The estimation that such a method would be effective in suppressing the generation of particles that occur on the substrate due to the substrate processing was obtained in the process of the inventors of the present invention investigating the cause of the generation of particles. . That is, the inventor of the present invention uses the substrate processing apparatus shown in FIG. 4 and uses a plurality of boats that hold the wafer 4 as a substrate, and performs BTBAS-nitride film formation a plurality of times. In the wafer 4 on which the nitride film is deposited by this substrate processing, almost no generation of particles is recognized, but in the wafer 4 on which the nitride film is deposited by the second and subsequent substrate processing, significant generation of particles is recognized. I found. The difference in the degree of such particle generation is shown in FIG.

  FIG. 3A shows the state of generation of particles on the wafer 4 on which the nitride film is deposited by the second and subsequent substrate processes, and FIG. 3B shows the nitride film deposited by the first substrate process. The generation state of particles on the wafer 4 is shown. In the figure, the generation position of the particle is represented by a point on the wafer 4. The number of particles shown in the lower right of the wafer 4 indicates the number of particles increased by the substrate processing. As is clear from comparison of the numbers, almost no generation of particles is observed in the wafer 4 on which the nitride film is deposited by the first substrate treatment, but the nitride film is deposited by the second and subsequent substrate treatments. In addition, significant generation of particles is observed on the wafer 4.

  The significant difference in the particle generation state described above is that the wafer 4 subjected to the second and subsequent substrate treatments reacts with the wafer that has been pre-processed before the film formation in the transfer chamber (indicated by reference numeral 21 in FIG. 1). While unloading from the furnace 20, the wafer subjected to the first substrate processing is in contact with the outgas from the BTBAS-nitride film formed on the processed wafer or on a quartz member such as a boat. 4 is considered to be caused by the fact that such an outgassing is not touched before film formation.

  That is, when unloading the pre-processed wafer from the reaction furnace 20, a very small amount of outgas (from (f in FIG. 5) is generated from the BTBAS-nitride film on the wafer 4 or the quartz member (boat or reaction tube). ), Indicated by a wavy arrow). This outgas component diffuses into a transfer chamber (indicated by reference numeral 21 in FIG. 1) for transferring the wafer 4. The next batch of wafers 4 is already held in the transfer chamber and held in the boat 6 b, and the outgas component is adsorbed on the wafers 4. The above-described gas release from the BTBAS-nitride film has been confirmed as follows.

  FIG. 6 shows the analysis result of the outgas component of the BTBAS-nitride film by the temperature programmed desorption method (TDS analysis). In the figure, ion currents (arbitrary scale) of mass numbers 2, 16, 17, 18, 27, 28, and 44 are displayed, but only the cases of mass numbers 2 and 18 are shown separately. As seen in the figure, water having a mass number of 18 and hydrogen having a mass number of 2 are detected as main components as the outgas components.

  From this, it is considered that generation of particles from the BTBAS-nitride film formed on the processed wafer or a quartz member such as a boat may be suppressed in order to suppress generation of particles. An effective means for suppressing the generation of the outgas is when there is no separation between the reaction furnace 20 and the transfer chamber 21, that is, on the wafer 4 or the quartz member when the wafer 4 is unloaded from the reaction furnace 20. The temperature of the formed BTBAS-nitride film is lowered. The reason for this can be explained from FIG. 6 in that the lower the temperature, the smaller the amount of outgas. For that purpose, the temperature in the reaction furnace 20 when the wafer 4 is unloaded from the reaction furnace 20 may be lowered.

  The method for manufacturing a semiconductor device according to the present invention is the same as the prior art with respect to matters other than the temperature of the reaction furnace when the substrate after substrate processing is unloaded from the reaction furnace.

FIG. 1 shows an embodiment of the present invention in which a Si ₃ N ₄ film (nitride film) is formed on a wafer 4 as a substrate using a gas obtained by vaporizing BTBAS (hereinafter abbreviated as BTBAS gas) and NH _3. It is a figure explaining taking the method (BTBAS-nitride film formation method) as an example, and has shown the principal part of the substrate processing apparatus used for this method. In the figure, 1 is a reaction tube, the reaction tube 1 is composed of a quartz outer tube 1a and a quartz inner tube 1b, 3a is a BTBAS gas outlet, 3b is an ammonia outlet, and 4 is a substrate. The wafer 4 is stacked in the vertical direction and loaded into the boat 6a. The boat 6a is fixed to the center of the reaction furnace 20 on the stainless lid 12 via the cap 7. 8 is a heater for heating the inside of the reaction furnace 20, 9a is a BTBAS gas introduction pipe, 9b is an ammonia introduction pipe, 10 is an exhaust port, and 11 is a reaction gas introduction part into the quartz inner tube 1b. 15 is a preliminary exhaust valve, and 16 is a main exhaust valve. The preliminary exhaust valve 15 and the main exhaust valve 16 are connected to an exhaust pump (not shown).

  In the BTBAS-nitride film forming process using the reaction furnace 20 of the substrate processing apparatus shown in FIG. 1, the wafer 4 loaded in the boat 6a is heated by the heater 8 and is nitrided on the surface by reaction with the reaction gas. A film is formed. As the reaction gas, BTBAS gas passes through the BTBAS gas introduction pipe 9a, and is ejected from the BTBAS gas injection port 3a to the reaction gas introduction part 11, and ammonia passes through the ammonia introduction pipe 9b, and the reaction gas introduction part 11 from the ammonia injection port 3b. To erupt. These two gases are mixed in the reaction gas introduction portion 11 to become a reaction gas, rise in the quartz inner tube 1b, react with the wafer 4, and as a result, a BTBAS-nitride film is formed on the surface of the wafer 4. It is formed. The gas after the reaction descends between the quartz outer tube 1a and the quartz inner tube 1b and reaches the exhaust port 10, from which a preliminary exhaust valve 15, a main exhaust valve 16 and a pump (not shown) are formed. Exhaust by the exhaust system.

  At least two wafer holding boats 6a and 6b are used in the process of processing the wafer 4 as a substrate and forming the BTBAS-nitride film on the wafer 4 using the substrate processing apparatus shown in FIG. As shown in FIG. 1, while the boat 6 a is in the reaction furnace 20 and the wafer 4 loaded in the boat 6 a is undergoing substrate processing for BTBAS-nitride film formation, the boat 6 b is in the transfer chamber. The wafer 4 to be processed next is transferred to the boat 6 b by the transfer machine 14.

  After the substrate processing of the wafers 4 loaded in the boat 6a is completed, unlike the prior art, the temperature in the reaction furnace 20 is lowered below the temperature at the time of substrate processing, and then the wafers 4 that are processed substrates are held. The boat 6a is unloaded to the outside of the reaction furnace 20. In this way, the temperature of the unloaded wafer 4 is lower than in the case of the conventional technique (when the boat 6a is unloaded while the temperature in the reaction furnace 20 is kept at the substrate processing temperature). Yes. Therefore, the amount of the outgas from the BTBAS-nitride film formed on the wafer 4 or the quartz member is extremely small compared to the case of the prior art, and the concentration of the outgas in the transfer chamber 21 is also the case of the prior art. It becomes very low compared. As a result, the influence of the outgas on the wafer 4 to be processed next, which is transferred to the boat 6b, becomes extremely small, and this wafer 4 is then placed in the reaction furnace 20 for substrate processing. If this happens, the generation of particles is reduced.

The furnace temperature T _UNL at the time of boat unloading may be lowered by about 60 to 80 ° C. from the furnace temperature _TFFM at the time of film formation (during substrate processing). For example, when T _FFM is 600 ° C., 520 ° C., which is about 80 ° C. lower than T _FFM , is sufficient for T _UNL . Even if T _UNL is lowered from T _FFM by 100 ° C. and 200 ° C., the same effect can be obtained, but it is not preferable because it takes more time than necessary to lower the temperature. Further, when the temperature is lowered by 30 ° C. or 40 ° C., the outgassing cannot be sufficiently prevented.

_2, when _{T FFM} is 600 ° _C., (due next processing) _{T UNL} and shows the relationship between the wafer 4 on the particles increase. In the figure, when T _UNL = 600 ° C. = T _FFM (prior art), three bars are shown, but the left bar shows the amount of particle increase in the wafer 4 taken from the upper part of the boat, This bar indicates the amount of increase in particles in the wafer 4 sampled from the center of the boat, and the right bar indicates the amount of increase in particles in the wafer 4 sampled from the bottom of the boat. In the case of T _UNL = 520 ° C., 480 ° C., 420 ° C., the amount of increase in particles on the wafer 4 was 0 in all cases, so the figure shows three corresponding to each of the three bars. Only 0 is entered. From this figure, it can be seen that if T _UNL = 520 ° C. or less, that is, T _FFM −T _UNL = 80 ° C. or less, a sufficient effect appears.

Needless to say, the temperature in the furnace lowered to T _UNL is returned to T _FFM when the next substrate processing is performed. That is, after the furnace temperature is returned to _TFFM , the boat 6a or 6b holding the unprocessed wafer 4 is inserted into the reaction furnace 20 to perform substrate processing.

  In the above description, the BTBAS-nitride film forming method has been described as an example, but the scope of application of the present invention is not limited to this.

It is a figure explaining the manufacturing method of the semiconductor device concerning the present invention. It is a figure explaining the effect of this invention. It is a figure which compares the generation state of the particle | grains on a wafer, (a) shows the generation state of the particle | grains by the board | substrate process after the 2nd time, (b) shows the generation state of the particle | grains by the 1st board | substrate process. It is a figure explaining a prior art. It is a figure explaining a prior art. It is a figure which shows the outgas component from the wafer after a film-forming process. 2 is a scanning electron micrograph of a wafer surface where particles are generated.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Reaction tube, 1a ... Quartz outer tube, 1b ... Quartz inner tube, 3a ... BTBAS gas outlet, 3b ... Ammonia outlet, 4 ... Wafer, 6a, 6b ... Boat, 7 ... Cap, 8 ... Heater, 9a ... BTBAS gas introduction pipe, 9b ... ammonia introduction pipe, 10 ... exhaust port, 11 ... reactive gas introduction part, 12 ... stainless steel lid, 14 ... transfer machine, 15 ... preliminary exhaust valve, 16 ... main exhaust valve, 20 ... reaction Furnace, 21 ... transfer chamber, A ... transfer position, B ... elevator position, C ... retreat position.

Claims (5)

  A substrate processing apparatus having a plurality of boats holding a plurality of substrates is used, and an outgas is generated at the film formation temperature on a substrate held by one of the boats in a reaction furnace having a film formation temperature. While performing the process of forming the film to be generated, the substrate to be processed next time is transferred to the other one of the boats outside the reactor, and the substrate in the reactor is transferred. After the treatment is completed and the film is formed on the substrate, the boat, and the reaction furnace, the temperature in the reaction furnace is lowered below the film formation temperature, and then the processed substrate. The boat that holds the substrate to be processed next time is unloaded to the outside of the reactor where the boat that holds the substrate to be processed exists, the temperature in the reactor is returned to the film formation temperature, and the substrate to be processed next time Loading the retained boat into the reactor The method of manufacturing a semiconductor device according to claim.   A substrate processing apparatus having a plurality of boats holding a plurality of substrates is used, and an outgas is generated at the film formation temperature on a substrate held by one of the boats in a reaction furnace having a film formation temperature. During the process of forming the film to be generated, the substrate to be processed next time is transferred to the other one of the boats in the transfer chamber below the reaction furnace, After the processing of the substrate is completed and the film is formed on the substrate, on the boat, and in the reaction furnace, the temperature in the reaction furnace is lowered below the film formation temperature, and then the processing is performed. The boat holding the subsequent substrate is unloaded from the reaction furnace to the transfer chamber where the boat holding the substrate to be processed next time is present, and the temperature in the reaction furnace is returned to the film formation temperature. The boat holding the substrate to be processed next time The method of manufacturing a semiconductor device characterized by loading the serial reactor.   Using a substrate processing apparatus having a plurality of boats for holding a plurality of substrates, and using a tertiary butyl amino silane on a substrate held by one of the boats in a reaction furnace at a film forming temperature. During the process of forming the film, the substrate to be processed next time is transferred to the other one of the boats in the transfer chamber below the reactor, and the substrate in the reactor is transferred. After the processing is completed, after the film is formed on the substrate, the boat, and the reaction furnace, the temperature in the reaction furnace is lowered below the film formation temperature, The boat holding the substrate is unloaded from the reaction furnace to the transfer chamber where the boat holding the substrate to be processed next is present, the temperature in the reaction furnace is returned to the film formation temperature, and the next time Before holding the substrate to be processed The method of manufacturing a semiconductor device characterized by loading the boat into the reaction furnace.   4. The method of manufacturing a semiconductor device according to claim 3, wherein the process is a process of forming a silicon nitride film on the substrate using bis-tertiary butyl amino silane and ammonia.   Using a substrate processing apparatus having a plurality of boats for holding a plurality of substrates, water, hydrogen at the film formation temperature on a substrate held in one of the boats in a reaction furnace having a film formation temperature The substrate to be subjected to the next processing is transferred to the other one of the boats outside the reaction furnace while performing the processing to form a film in which the outgas is generated as a main component. After the processing of the substrate in the reaction furnace is completed and the film is formed on the substrate, the boat, and the reaction furnace, the temperature in the reaction furnace is lowered below the film formation temperature. A method for manufacturing a semiconductor device, comprising: subsequently unloading the boat holding the processed substrate to the outside of the reactor where the boat holding the substrate to be processed next is present.

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