JP2007096148A - Light emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device in which discoloration resistance, light fastness, optical characteristics, and the like, are stabilized. <P>SOLUTION: The light emitting device comprises a light emitting element, and a translucent hybrid material continuous film covering the light emitting element and having a substantially same thickness on the first surface of the light emitting element, on the second surface intersecting the first surface, and at the corners of the first and second surfaces. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to improvements in light emitting devices.

In a light emitting element that outputs light having a short wavelength, such as a blue LED, high durability (discoloration resistance) is required for a member covering the light emitting element. Therefore, a technique for covering a light emitting element with an inorganic material film such as a transparent metal oxide has been proposed (see Patent Document 1).
In addition, refer to patent documents 1-7 reference and patent documents 8-9 as literature which discloses the technique relevant to this invention.
Japanese Patent Laid-Open No. 2002-203989 JP 2002-208733 A Patent No. 2924961 Japanese Patent No. 3230518 Japanese Patent No. 3275308 Japanese Patent No. 3307316 Patent No. 3337000 JP 2004-51194 A Japanese Patent Laid-Open No. 2004-197509

  In general, since the softening point of an inorganic material is a high temperature, the light-emitting element cannot be covered with the softened inorganic material. Therefore, an inorganic material is molded into a predetermined shape, and this is coated on the light emitting element. Since there is no adhesiveness between the inorganic material molding and the light emitting element, an adhesive is inevitable between the two. Since the molded product of the inorganic material has no plasticity, it does not follow the surface of the light emitting element. Therefore, when the upper surface and the side surface of the light emitting element are covered, a space is formed between the light emitting element and the molded product of the inorganic material, or a thick adhesive layer is required.

This adhesive layer is required to have an appropriate refractive index, high discoloration resistance and durability, but it is difficult to find an adhesive material that satisfies such requirements.
In addition, if a space is formed between the light emitting element and the molded product of the inorganic material, there is a possibility that light emitted from the light emitting element is refracted and reflected, which affects the optical characteristics.

  In the aforementioned Patent Documents 8 and 9, a liquid for forming an inorganic material film that has fluidity and is cured at a low temperature that does not affect the light emitting element is proposed. Although it is possible to form an inorganic material film on a light-emitting element using such an inorganic material film-forming liquid, it is difficult to form a thick film on, for example, the vertical surface of the light-emitting element because the forming liquid has high fluidity. For example, it has been difficult to coat the top and side surfaces of the light emitting element with an inorganic material film having a uniform thickness. For this reason, there are problems in that the discoloration resistance and weather resistance vary, and it is difficult to adjust optical characteristics.

The present invention has been made to solve the above problems. That is,
A light emitting element;
A continuous film made of a light-transmitting hybrid material that covers the light-emitting element, the first surface of the light-emitting element, a second surface intersecting the first surface, the first surface, and the first surface A continuous film of translucent hybrid material having substantially the same thickness at the corners of the two surfaces;
A light-emitting device comprising:

  According to the light emitting device configured as described above, the entire surface of the light emitting element can be covered with the continuous film of the transparent hybrid material having a uniform thickness. Therefore, it is possible to provide a high-quality light-emitting device in which not only optical characteristics but also characteristics such as discoloration resistance and weather resistance are stable.

該縮重合反応物の膜を加熱処理して形成される。 The translucent hybrid material continuous film of the present invention can be provided as follows.
First, a semi-cured translucent hybrid material continuous film having a uniform thickness is prepared, and this is put on the light emitting element. Thereafter, the film is heated to soften the semi-cured translucent hybrid material continuous film so as to be adapted to the surface of the light emitting element. By maintaining the heating in that state, the curing of the translucent hybrid material continuous film is completed.
Such a semi-cured translucent hybrid material continuous film is obtained as follows. That is,
The translucent hybrid material continuous film in a semi-cured state has a chemical formula M ^{x +} (OR1) _y R2 _xy (wherein M is an element including any one of Si, Al, Zr, and Ti, R1 is carbon number 1) -5 hydrocarbon groups, R2 is an organic group containing at least one selected from epoxy, acryloyloxy, methacryloyloxy, phenyl, mercapto and alkyl groups, x is the valence of M, and x and y are integers) A step of forming a hydrolysis-condensation product of the alkoxide compound represented by the formula (1) and a polycondensation reaction product of a functional group-terminated polysiloxane compound (see the following chemical formula 1) into a film;

The film of the condensation polymerization reaction product is formed by heat treatment.

In the above, hydrolysis and polycondensation of the alkoxide compound represented by the chemical formula M ^{x +} (OR1) _y R2 _xy is performed as follows.

The following can be adopted as the alkoxide compound.
Among the compounds represented by the chemical formula M ^{X +} (OR1) _y R _2x-y , examples of the compound in which M is Si include γ-glucidoxypropyltrimethoxysilane, γ-glucidoxypropyltriethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ- (3,4-epoxycyclohexyl) ethyltriethoxysilane, γ- (meth) acryloxypropyltrimethoxysilane, phenyltrimethoxysilane, phenyltriethoxy Silane, γ-mercaptopropyltrimethoxysilane, methyltrimethoxysilane, methyltriethoxysilane, methyltripropoxysilane, methyltributoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, tetramethoxysilane, tetraethoxysilane, tetra Examples of the compound in which M is Al include propoxysilane and tetrabutoxysilane. Examples of the compound in which M is Al include aluminum triisopropoxide, aluminum n-butoxide, aluminum trit-butoxide, and aluminum triethoxide, and M is Zr. Examples of the compound which is Zr include zirconium n-propoxide, zirconium n-butoxide, zirconium i-butoxide, zirconium t-butoxide, zirconium dimethacrylate dibutoxide and the like, and compounds where M is Ti include titanium tetraisopropoxy. , Titanium tetra n-butoxide, titanium tetra i-butoxide, titanium methacrylate triisopropoxide, titanium tetra n-propoxide, titanium tetraethoxide and the like. Of these compounds, only one type may be used, but two or more types may be used.

Specific examples of the compound represented by the chemical formula 1 (functional group-terminated polysiloxane compound) include the following.
Silanol (Si—OH) group-terminated polydimethylsiloxane, silanol group-terminated polydiphenylsiloxane, silanol group-terminated dimethylsiloxane-diphenylsiloxane copolymer as a compound containing a hydroxy group at any one or more of R3 to R6 in Chemical Formula 1 And silanol-terminated polytrifluoropropylmethylsiloxane.

Since the hydrolysis / condensation product of the alkoxide compound and the condensation polymerization reaction product of the functional group-terminated polysiloxane compound have fluidity, the viscosity is adjusted by adding a viscosity modifier such as an organic solvent. Using the mixed liquid, a sheet having a desired thickness is formed using a known method such as screen printing, bar coater, dip coating, knife coating, or the like. The said sheet | seat is dried at 70-150 degreeC, and the translucent hybrid material continuous film of a semi-hardened state is obtained.
According to the mixed liquid having fluidity, it can be formed into a desired shape other than the sheet by pouring it into a mold and further drying it.

A phosphor can be mixed in the hydrolysis / condensation product of the alkoxide compound and the condensation polymerization reaction product of the functional group-terminated polysiloxane compound. By adjusting the viscosity of the polycondensation reaction product, the phosphor can be dispersed substantially uniformly in the sheet or other semi-cured translucent hybrid material continuous film.
The semi-cured translucent hybrid material continuous film is hardly fluidized even when it is coated on the light emitting element and the curing is completed. Accordingly, even in the stage where the curing is completed, the uniformly dispersed state of the phosphor therein is maintained.

The following phosphors can be used as the phosphor dispersed in the light-transmitting hybrid material continuous film.
As the phosphor, those commonly used in light emitting devices such as a combination of a blue light emitting element and a YAG phosphor can be used as they are.
For example, the following can be adopted as the inorganic phosphor. For example, 6MgO.As ₂ O ₅ : Mn ⁴⁺ having a red emission color, Y (PV) O ₄ : Eu, CaLa0.1Eu _0.9 Ga ₃ O ₇ , BaY _0.9 Sm _0.1 Ga ₃ O ₇ , Ca (Y _0.5 Eu _0.5 ) (Ga _0.5 In _0.5 ) ₃ O ₇ , Y ₃ O ₃ : Eu, YVO ₄ : Eu, Y ₂ O ₂ : Eu, 3.5 MgO · (Ba, Ca, Mg) ₅ (PO ₄ ) ₃ Cl: Eu ²⁺ , (Ba, Ca, Mg) ₅ having a blue emission color, such as 0.5 MgF ₂ GeO ₂ : Mn ⁴⁺ and (Y · Cd) BO ₂ : Eu Mg) ₂ Al ₁₆ O ₂₇ : Eu ²⁺ , Ba ₃ MgSi ₂ O ₈ : Eu ²⁺ , BaMg ₂ Al ₁₆ O ₂₇ : Eu ²⁺ , (Sr, Ca) ₁₀ (PO ₄ ) ₆ Cl ₂ : Eu ²⁺
, (Sr, Ca) ₁₀ (PO ₄ ) ₆ Cl ₂ .nB ₂ O ₃ : Eu ²⁺ , Sr ₁₀ (PO ₄ ) ₆ Cl ₂ : Eu ²⁺ , (Sr, Ba, Ca) ₅ (PO ₄ ) ₃ Cl : Eu ²⁺ , Sr ₂ P ₂ O ₇ : Eu, Sr ₅ (PO ₄ ) ₃ Cl: Eu, (Sr, Ca, Ba) ₃ (PO ₄ ) ₆ Cl: Eu, SrO · P ₂ O ₅ · B ₂ O ₅ : Eu, (BaCa) ₅ (PO ₄ ) ₃ Cl: Eu, SrLa _0.95 Tm _0.05 Ga ₃ O ₇ , ZnS: Ag, GaWO ₄ , Y ₂ SiO ₆ : Ce, ZnS: Ag, Ga , Cl, Ca ₂ B ₄ OCl: Eu ²⁺ , BaMgAl ₄ O ₃ : Eu ²⁺ , and the general formula (M1, Eu) ₁₀ (PO ₄ ) ₆ Cl ₂ (M1 consists of Mg, Ca, Sr, and Ba) At least selected from the group Phosphor or the like are also represented by one element), _Y 3 _Al 5 _O 12 with luminescent color ^{_{greenish: Ce 3+ (YAG), Y}} 2 SiO 5: Ce 3+, Tb 3+, Sr 2 Si 3 O _{8 · 2SrCl 2: Eu, BaMg} 2 Al 16 O 27: Eu 2+, Mn 2+, ZnSiO 4: Mn, Zn 2 SiO 4: Mn, LaPO 4: Tb, SrAl 2 O 4: Eu, SrLa 0.2 Tb 0 _.8 Ga ₃ O ₇ , CaY _0.9 Pr _0.1 Ga ₃ O ₇ , ZnGd _0.8 Ho _0.2 Ga ₃ O ₇ , SrLa _0.6 Tb _0.4 Al ₃ O ₇ , ZnS: Cu, _{Al, (Zn, Cd) S} : Cu, Al, ZnS: Cu, Au, Al, Zn 2 SiO 4: Mn, ZnSiO 4: Mn, ZnS: Ag, Cu, (Zn · Cd) S: Cu, ZnS: Cu , GdOS: Tb, LaOS: Tb, YSiO ₄ : Ce · Tb, ZnGeO ₄ : Mn, GeMgAlO: Tb, SrGaS: Eu ²⁺ , ZnS: Cu · Co, MgO · nB ₂ O ₃ : Ge, Tb, LaOBr: Tb , Tm, La ₂ O ₂ S: Tb, and the like can be used. Alternatively, YVO ₄ : Dy having a white emission color and CaLu _0.5 Dy _0.5 Ga ₃ O ₇ having a yellow emission color can be used.

When the wavelength of light from the light emitting element is a so-called ultraviolet ray having a wavelength of 400 nm or less, for example, ZnS: Cu, Al, (Zn, Cd) S: Cu, Al, ZnS: Cu, Au, Al, Y ₂ SiO ₅ : Tb, (Zn, Cd) S: Cu, Gd ₂ O ₂ S: Tb, Y ₂ O ₂ S: Tb, Y ₃ Al ₅ O ₁₂ : Ce, (Zn, Cd) S: Ag, ZnS: Ag, Cu , Ga, Cl, Y ₃ Al ₅ O ₁₂ : Tb, Y ₃ (Al, Ga) ₅ O ₁₂ : Tb, Zn ₂ SiO ₄ : Mn, LaPO ₄ : Ce, Tb, Y ₂ O ₃ S: Eu, YVO ₄ : Eu, ZnS: Mn, Y ₂ O ₃ : Eu, ZnS: Ag, ZnS: Ag, Al, (Sr, Ca, Ba, Mg) ₁₀ (PO ₄ ) _{6 Cl 2} : Eu, Sr ₁₀ (PO _{4 ) 6 Cl 2: Eu, (} Ba, Sr, Eu) ( _{g, Mn) Al 10 O 17} , (Ba, Eu) MgAl 10 O 17, ZnO: Zn, Y 2 SiO 5: either Ce or be used in combination of two or more phosphors selected from these it can.

Two or more different types of phosphors can be used in combination.
The second phosphor not only absorbs the light from the light emitting element and emits the third wavelength light, but also absorbs the fluorescence emitted from the first phosphor and emits the third wavelength light. But you can.
A light diffusing material can also be used in combination with the phosphor. As a result, light emission unevenness can be reduced.

The temperature for curing the semi-cured translucent hybrid material continuous film is preferably 600 ° C. or lower. This is because heating above 600 ° C. may affect the light emitting element and the added phosphor.
By selecting the material, curing of the translucent hybrid material continuous film in a semi-cured state can be completed by heating at 200 ° C. In addition, the organic component in the translucent hybrid material continuous film of a semi-hardened state can also be removed by making hardening temperature 400 degreeC or more.

When the semi-cured translucent hybrid material continuous film is heated and cured, the translucent hybrid material continuous film softens and conforms to the surface of the light emitting element. According to the study by the present inventors, the maximum heating temperature for the translucent hybrid material continuous film in the semi-cured state is set to 600 ° C. or less, and in the process of heating from room temperature, the temperature change from the semi-cured state to the curing temperature range is observed. By adjusting, the light-transmitting hybrid material continuous film softens but does not reach fluidity, so it deforms to follow the surface of the light emitting element by gravity while maintaining the thickness of the film. . Therefore, the thickness of the hybrid material layer covering the light emitting element becomes uniform, and various characteristics such as discoloration resistance, weather resistance, and optical properties are stabilized.
In addition, when a semi-cured light-transmitting hybrid material continuous film is heated, adhesiveness is obtained between the film and the light-emitting element. This is considered to be adapted to the surface shape of the light emitting element when the light transmissive hybrid material continuous film is softened. For this reason, it is not necessary to interpose an adhesive layer between the translucent hybrid material continuous film and the light emitting element.

The light emitting elements include light emitting diodes, laser diodes and other light emitting elements. The light emitting / receiving wavelength of the light emitting element is not particularly limited, and a group III nitride compound semiconductor element effective for ultraviolet to green light and a GaAs semiconductor element effective for red light can be used.
What emits ultraviolet rays used in the examples is a group III nitride compound semiconductor light emitting device. Here, III nitride compound semiconductor is represented by the general formula _{Al X Ga Y In 1-X} -Y N (0 <X ≦ 1,0 ≦ Y ≦ 1,0 ≦ X + Y ≦ 1). Among these, those containing Al include a so-called binary system of AlN, a so-called ternary system of Al _x Ga _1-x N and Al _x In _1-x N (where 0 <x <1). In the group III nitride compound semiconductor and GaN, at least part of the group III element may be replaced with boron (B), thallium (Tl), etc., and at least part of nitrogen (N) may be phosphorus (P ), Arsenic (As), antimony (Sb), bismuth (Bi) and the like.
Further, the group III nitride compound semiconductor may contain an arbitrary dopant. As the n-type impurity, silicon (Si), germanium (Ge), selenium (Se), tellurium (Te), carbon (C), or the like can be used. As the p-type impurity, magnesium (Mg), zinc (Zr), beryllium (Be), calcium (Ca), strontium (Sr), barium (Ba), or the like can be used. Although the group III nitride compound semiconductor can be exposed to electron beam irradiation, plasma irradiation or furnace heating after doping with p-type impurities, it is not essential.
The group III nitride compound semiconductor layer is formed by MOCVD (metal organic chemical vapor deposition). It is not necessary to form all the semiconductor layers constituting the element by the MOCVD method, and molecular beam crystal growth method (MBE method), halide vapor phase growth method (HVPE method), sputtering method, ion plating method, etc. are used in combination. Is possible.

  As a structure of the light-emitting element, a homostructure, a heterostructure, or a double heterostructure having a MIS junction, a PIN junction, or a pn junction can be used. A quantum well structure (single quantum well structure or multiple quantum well structure) can also be adopted as the light emitting layer. As such a group III nitride compound semiconductor light emitting device, a face-up type in which the main light receiving and emitting direction (electrode surface) is the optical axis direction of the optical device, and the reflected light with the main light receiving and emitting direction opposite to the optical axis direction. A flip chip type using the above can be used.

A plurality of translucent hybrid material continuous films in a semi-cured state can be prepared, and these can be coated on the light emitting element. Thereby, a light emitting element can be thickly covered with a translucent hybrid continuous layer. For example, by setting the thickness of the light-transmitting hybrid continuous layer to 50 to 300 μm, components harmful to the light emitting element (humidity, chemical substances, etc.) can be blocked.
Further, it is also possible to change the thickness of the light-transmitting hybrid material continuous film covering the light-emitting element by superimposing partially semi-cured light-transmitting hybrid material continuous films.

When a plurality of translucent hybrid continuous layers are stacked, the refractive index of each layer can be changed. For example, when a sapphire substrate (refractive index: about 1.8) is coated with the translucent hybrid continuous layer, and the translucent hybrid continuous layer is further coated with a resin layer (refractive index: about 1.5). The refractive index of the translucent hybrid continuous layer on the sapphire substrate side is about 1.8, the refractive index of the translucent hybrid continuous layer on the resin layer side is about 1.5, and the refractive index of the translucent hybrid continuous layer between them is The rate is gradually reduced from the former to the latter. As a result, the difference in refractive index between the respective layers is reduced, thereby improving the light extraction efficiency from the light emitting element.
In the case of using a plurality of light-transmitting hybrid continuous layers, the type and / or concentration of the phosphor dispersed in each layer can be changed.

Next, examples of the present invention will be described.
(First Example)
In this example, a group III nitride compound semiconductor light emitting device 10 shown in FIG. 1 was used as an optical device. This light emitting element emits blue light.
The specifications of each layer of the light emitting element 10 are as follows.
Layer: Composition p-type layer 15: p-GaN: Mg
Layer 14 including light emitting layer: n-type layer including InGaN layer 13: n-GaN: Si
Buffer layer 12: AlN
Substrate 11: Sapphire Note that the emission wavelength of the light-emitting element can be adjusted by adjusting the composition ratio of the group III element in the layer including the light-emitting layer. In addition, a flip-chip type light emitting element that employs a thick p-type electrode that covers the upper surface of the p-type layer 15 instead of the translucent electrode 16 and the p-electrode 17 can also be used.

An n-type layer 13 made of GaN doped with Si as an n-type impurity is formed on the substrate 11 via a buffer layer 12. Here, sapphire is used as the substrate 11, but the substrate 11 is not limited to this. Sapphire, spinel, silicon carbide, zinc oxide, magnesium oxide, manganese oxide, zirconium boride, group III nitride compound semiconductor single crystal Etc. can be used. Further, the buffer layer is formed by MOCVD using AlN, but the present invention is not limited to this, and GaN, InN, AlGaN, InGaN, AlInGaN, etc. can be used as the material, and molecular beam crystal growth is used as the manufacturing method. A method (MBE method), a halide vapor phase epitaxy method (HVPE method), a sputtering method, an ion plating method, or the like can be used. When a group III nitride compound semiconductor is used as the substrate, the buffer layer can be omitted.
Further, the substrate and the buffer layer can be removed as necessary after the semiconductor element is formed.
Here, the n-type layer 13 is formed of GaN, but AlGaN, InGaN, or AlInGaN can be used.
The n-type layer 13 is doped with Si as an n-type impurity, but Ge, Se, Te, C, or the like can also be used as an n-type impurity.
The layer 14 including the light emitting layer may include a quantum well structure (multiple quantum well structure or single quantum well structure), and the light emitting element has a single hetero type, a double hetero type, and a homojunction. It may be of a type.

The layer 14 including the light emitting layer may include a group III nitride compound semiconductor layer having a wide band gap doped with Mg or the like on the p-type layer 15 side. This is to effectively prevent the electrons injected into the layer 14 including the light emitting layer from diffusing into the p-type layer 15.
A p-type layer 15 made of GaN doped with Mg as a p-type impurity is formed on the layer 14 including the light-emitting layer. The p-type layer 15 can be AlGaN, InGaN, or InAlGaN, and Zn, Be, Ca, Sr, and Ba can be used as the p-type impurity. After introducing the p-type impurity, the resistance can be lowered by a known method such as electron beam irradiation, heating in a furnace, or plasma irradiation.
In the light emitting device having the above-described configuration, each group III nitride compound semiconductor layer is formed by performing MOCVD under general conditions, a molecular beam crystal growth method (MBE method), a halide vapor phase epitaxy method (HVPE method). ), A sputtering method, an ion plating method, or the like.

The n-electrode 18 is composed of two layers of Al and V. After the p-type layer 15 is formed, the p-type layer 15, the layer 14 including the light emitting layer, and a part of the n-type layer 13 are removed by etching. It is formed by vapor deposition on the exposed n-type layer 13.
The translucent electrode 16 is a thin film containing gold and is stacked on the p-type layer 15. The p-electrode 17 is also made of a material containing gold, and is formed on the translucent electrode 16 by vapor deposition. After forming each layer and each electrode by the above process, the separation process of each chip is performed.

Such a light emitting element 10 is fixed to the submount 21 as a flip chip type as shown in FIG.
On the other hand, a semi-cured translucent hybrid material continuous film 31 shown in FIG. 3 is prepared. The film 31 has a rectangular shape with corners cut into a semicircular shape, and the apex of the cutouts 32 coincides with the corners of the light emitting element 10.
This semi-cured translucent hybrid material continuous film 31 is formed as follows.
For example, a sheet-like semi-cured light-transmitting hybrid material continuous film that is sufficiently larger than the shape of the film 31 is prepared in advance and punched using a punching die having the shape of the film 31 to form a light-transmitting hybrid. There is a method of forming the material continuous film 31. In addition, a mold having the shape of the film 31 is prepared, and a hydrolyzed / condensed polymer of a liquid alkoxide compound and a polycondensation reaction product of a functional group-terminated polysiloxane compound are poured into the mold, and the light-transmitting hybrid is heated and dried. There is a method of forming the material continuous film 31.

As shown in FIG. 2 (B), the translucent hybrid material continuous film 31 in a semi-cured state is positioned on the light emitting element 10 and heated (200 ° C., 60 minutes) to complete the curing. To do.
During the heating, the semi-cured light-transmitting hybrid material continuous film 31 is softened and deforms along the surface of the light-emitting element 10 by gravity (see FIG. 2C). At this time, since the continuous film 31 does not have fluidity, the film thickness is maintained uniformly throughout. That is, the translucent hybrid material continuous film maintains substantially the same thickness on the upper surface, the side surface perpendicular to the upper surface, and the corners of the upper surface and the side surface. Further, the translucent hybrid material continuous film 31 is bonded to the light emitting element 10.

Other embodiments of the semi-cured translucent hybrid material continuous film 31 to be applied to the light emitting element are shown in FIGS.
The translucent hybrid material continuous film 41 in a semi-cured state shown in FIG. 4 has a rectangular cutout 42 in the film 31 of FIG.
The semi-cured light-transmitting hybrid material continuous film 44 in FIG. 5 has a rectangular shape similar to that of the light-emitting element 10, and the film 44 is placed on the light-emitting element 10 so that the centers of the two coincide.
The semi-cured light-transmitting hybrid material continuous film 47 in FIG. 6 is obtained by cutting four corners of a rectangle and is arranged so that each corner faces each side of the light emitting element 10.

FIG. 7 shows an example of a semi-cured translucent hybrid material continuous film 51 used when the light-emitting element 10 is used as a face-up type. This film 51 has a configuration in which a pair of rectangles are connected at the corners thereof, and as a result, a portion facing the electrodes 17 and 18 is open. In other words, in the film shown in FIG. 5, the portion facing the electrodes 17 and 18 is cut out.
In the example of FIG. 8, the notch portion of the film 55 is changed corresponding to the position where the electrodes 17 and 18 of the light emitting element 10 are formed.
In the example of FIGS. 7 and 8, the light-emitting element 10 is coated with a semi-cured light-transmitting hybrid material continuous film 51 and cured, and then wire bonding to the electrodes 17 and 18 is performed.

FIG. 9 shows a semi-cured light-transmitting hybrid material continuous film 51 of FIG. 7 separated into two parts 51a and 51b at substantially the center. Similarly, FIG. 10 shows the semi-cured light-transmitting hybrid material continuous film 55 of FIG. 8 separated into two parts 55a and 55b at the center.
In the example of FIGS. 9 and 10, the translucent hybrid material continuous films 51a, 51b, 55a, and 55b in a semi-cured state can be covered even after the electrodes 17 and 18 are wire-bonded.

Hereinafter, an example in which a translucent hybrid material continuous film has a plurality of layers will be described.
In FIG. 11, the light-emitting device shown in FIG. 2 (C) is further coated with a semi-cured light-transmitting hybrid material continuous film 31a, and the same process as in the example of FIG. 2 is repeated. The film has a plurality of layers.
In the example of FIG. 12, a plurality of semi-cured light-transmitting hybrid continuous layers 31, 31 a, and 31 b are laminated in advance (FIG. 12A), and this is put on the light emitting element 10 (FIG. 12B )) And heated to obtain the light emitting device shown in FIG.
The following effects can be obtained by using a plurality of translucent hybrid continuous layers.
(1) A thick hybrid material layer can be obtained by laminating a plurality of translucent hybrid continuous layers. Accordingly, moisture and other chemical substances that adversely affect the light emitting element can be reliably blocked.
(2) By setting each light-transmitting hybrid continuous layer thin and laminating one by one, even if the shape of the light-emitting element 10 becomes complicated, the light-transmitting hybrid continuous layer is more easily adapted to the shape. Become.
(3) The light extraction efficiency can be improved by adjusting the refractive index of each layer.
(4) Since the phosphor can be arbitrarily dispersed in each layer, the degree of freedom in adjusting the emission color of the light emitting device is improved.

  The present invention is not limited to the description of the embodiments and examples of the invention described above. Various modifications may be included in the present invention as long as those skilled in the art can easily conceive without departing from the description of the scope of claims.

It is sectional drawing which shows the structure of the light emitting element used in the Example of this invention. It is a schematic diagram which shows the manufacturing method of the light emitting device of the Example of this invention. The structure of the translucent hybrid material continuous film of the semi-hardened state of an Example is similarly shown. The structure of the translucent hybrid material continuous film of the semi-hardened state of a deformation | transformation aspect is shown. The structure of the translucent hybrid material continuous film of the semi-hardened state of a deformation | transformation aspect is shown. The structure of the translucent hybrid material continuous film of the semi-hardened state of a deformation | transformation aspect is shown. The structure of the translucent hybrid material continuous film of the semi-hardened state of a deformation | transformation aspect is shown. The structure of the translucent hybrid material continuous film of the semi-hardened state of a deformation | transformation aspect is shown. The structure of the translucent hybrid material continuous film of the semi-hardened state of a deformation | transformation aspect is shown. The structure of the translucent hybrid material continuous film of the semi-hardened state of a deformation | transformation aspect is shown. It is a schematic diagram which shows the manufacturing method of the light-emitting device which laminated the translucent hybrid material continuous film. It is a schematic diagram which shows the manufacturing method of the light-emitting device which laminated the translucent hybrid material continuous film.

Explanation of symbols

10 Light-Emitting Element 31, 41, 44, 47, 51, 55 Semi-cured translucent hybrid material continuous film

Claims (9)

A light emitting element;
A continuous film made of a light-transmitting hybrid material that covers the light-emitting element, the first surface of the light-emitting element, a second surface intersecting the first surface, the first surface, and the first surface A continuous film of translucent hybrid material having substantially the same thickness at the corners of the two surfaces;
A light-emitting device comprising: The translucent hybrid material continuous film has a chemical formula M ^{x +} (OR1) _y R2 _xy (wherein M is an element including any one of Si, Al, Zr, and Ti, and R 1 is a carbon having 1 to 5 carbon atoms). A hydrocarbon group, R2 is an organic group containing at least one selected from epoxy, acryloyloxy, methacryloyloxy, phenyl, mercapto and alkyl groups, x is a valence of M, and x and y are integers) A product obtained by heat-treating a polycondensation product of a hydrolysis / condensation product of an alkoxide compound and a functional group-terminated polysiloxane compound (see chemical formula 1 below)

The light-emitting device according to claim 1. The light-emitting device according to claim 1, wherein the light-transmitting hybrid material continuous film is laminated in multiple layers. The refractive index of at least one translucent hybrid material continuous film in the translucent hybrid material continuous film laminated in multiple layers is different from the refractive index of another translucent hybrid material continuous film. 4. The light emitting device according to 3. The light-emitting device according to claim 1, wherein a phosphor is dispersed in the translucent hybrid material continuous film. Covering the light-emitting element with a translucent hybrid material continuous film in a semi-cured state;
Softening the semi-cured translucent hybrid material continuous film by heating so as to conform to the surface of the light-emitting element, and completing the curing of the translucent hybrid material continuous film. Manufacturing method of light emitting device. The translucent hybrid material continuous film in the semi-cured state has a chemical formula M ^{x +} (OR1) _y R2 _xy (wherein M is an element including any one of Si, Al, Zr, and Ti, and R1 is the number of carbon atoms) 1 to 5 hydrocarbon groups, R2 is an organic group containing at least one selected from epoxy, acryloyloxy, methacryloyloxy, phenyl, mercapto and alkyl groups, x is the valence of M, and x and y are integers ) And a polycondensation reaction product of a functional group-terminated polysiloxane compound (see the following chemical formula 1) in the form of a film,

The production method according to claim 6, wherein the film of the condensation polymerization reaction product is formed by heating and drying. The method according to claim 6 or 7, wherein a phosphor is dispersed in the condensation polymerization reaction product. The manufacturing method according to any one of claims 6 to 8, wherein a plurality of semi-cured translucent hybrid material continuous films are prepared and placed on the light emitting element.

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