JP2007095179A - Manufacturing method of magnetic recording disk and manufacturing apparatus of magnetic recording disk - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a magnetic recording disk by which film-deposition is made possible in such a state that temperature of a substrate is reduced to a prescribed temperature without reducing throughput and to provide a manufacturing apparatus thereof. <P>SOLUTION: When a recording layer 16 of the magnetic recording disk of a perpendicular magnetic recording system is formed by a sputtering method, a forcibly cooling process for disposing a cylindrical cathode shield body 160 at a film deposition part 100 in a vacuum chamber 230 so as to enclose the periphery of a space 150 in which a substrate 10 for the magnetic recording disk and a target 110 are opposed to each other and supplying a cooling gas into the inner side of the cathode shield body 160 to cool the substrate 10 for the magnetic recording disk and a sputtering film deposition process for performing sputtering film deposition to the substrate 10 for the magnetic recording disk cooled to 100°C or below are performed. When the forcibly cooling process is performed, a rectification member 180 by which a flow of the cooling gas going to the substrate 10 for the magnetic recording disk is made vertical to the substrate 10 for the magnetic recording disk is disposed opposite to the substrate 10 for the magnetic recording disk. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a magnetic recording disk manufacturing method and a magnetic recording disk manufacturing apparatus.

As a technique for realizing high-density recording of a magnetic recording disk, a perpendicular magnetic recording system is drawing attention in place of the conventional in-plane magnetic recording system. In a perpendicular magnetic recording disk, from the upper layer side to the lower layer side, at least a protective layer made of diamond-like carbon, a recording layer made of a hard magnetic material, and a magnetic flux generated by a magnetic head used for recording on this recording layer A backing layer made of a soft magnetic material and a nonmagnetic underlayer are formed. At present, in a practically soft magnetic layer, the domain wall is a Bloch type, so that the spin rotates in the film thickness direction within the domain wall, and therefore a domain wall in the vertical direction appears at the upper and lower ends of the domain wall. As a result, it is a noise source. In order to prevent the formation of the domain wall of the noise source, the conventional method of controlling the barrier by exchange coupling with the soft magnetic underlayer using an antiferromagnetic film is sufficient when the exchange coupling is obtained. The formation of the domain wall of the soft magnetic backing layer can be prevented, which is very effective. However, for ordered alloy antiferromagnetic materials such as PtMn and NiMn, which have a high blocking temperature and a large exchange coupling magnetic field, heating for several minutes to several hours after film formation in order to obtain a sufficient exchange coupling magnetic field Since treatment is required, it is necessary to perform heating by flash annealing and cooling in a magnetic field using a lamp heater and cooling gases He, Freon, and N ₂ after forming the magnetic layer.

In recent years, the recording layer of a perpendicular magnetic recording disk has been mainly composed of a Co alloy SiO ₂ granular film. In this case, it is necessary to adjust the temperature before forming the recording layer. The temperature for forming such a recording layer is required to be 100 ° C. or lower. That is, if the film formation is not started at 100 ° C. or less, the granular component SiO ₂ starts to segregate.
JP 2002-367160 A

However, conventionally, as a cooling method for the substrate, natural cooling or a cooling system for supplying a cooling gas from the outer wall of the vacuum chamber through a gas pipe is adopted, so that the cooling efficiency is low, and the target is achieved within a short time. There is a problem that it cannot reach 100 ° C. or lower. Therefore, the temperature can be lowered to the target value while maintaining the current throughput. However, even if a cooling chamber is provided separately, there is a problem that throughput is lowered. Further, when forming a Co alloy SiO ₂ granular film, it is necessary to perform temperature control with high accuracy and to perform phase separation uniformly, but such temperature control is impossible. Further, when cooling gas is supplied from the outer wall of the vacuum chamber, there is a problem that particles are generated.

  In view of the above problems, an object of the present invention is to provide a method for manufacturing a magnetic recording disk and a magnetic recording disk capable of forming a film while the substrate temperature is reduced to a predetermined temperature without reducing the throughput. It is to provide a manufacturing apparatus.

  In order to solve the above problems, according to the present invention, in a method of manufacturing a magnetic recording disk in which a plurality of thin films including at least a recording layer is formed on a surface of a magnetic recording disk substrate, at least one of the plurality of thin films is formed. When forming a thin film by sputtering, a cylindrical cathode shield body is disposed in a vacuum chamber so as to surround a space where the magnetic recording disk substrate and the target face each other. A forced cooling step of cooling the magnetic recording disk substrate by supplying a cooling gas to the inside; and a sputter film forming step of forming a film by sputtering on the magnetic recording disk substrate cooled in the forced cooling step. It is characterized by performing.

  Further, in the present invention, in the magnetic recording disk manufacturing apparatus provided with a plurality of film forming units for continuously laminating a plurality of thin films including at least a recording layer on the surface of the magnetic recording disk substrate, the plurality of film formations In one of the parts, a cylindrical cathode shield body is disposed in a vacuum chamber so as to surround a space where the magnetic recording disk substrate and the target for sputtering film formation face each other, A cooling gas introduction path for supplying a cooling gas is formed inside the cathode shield body.

  In the present invention, a cathode shield body is disposed in a vacuum chamber so as to surround the space where the magnetic recording disk substrate and the target face each other, and cooling gas is supplied from the cooling gas introduction path to the inside of the cathode shield body. Introduce. Therefore, it is not necessary to cool the entire vacuum chamber, and the cooling gas introduced from the cooling gas introduction path efficiently reaches the magnetic recording disk substrate, and the magnetic recording disk substrate is predetermined in a short time. Can be cooled to a temperature of In addition, since the sputter film forming process is performed in a state where the magnetic recording disk substrate and the target face each other with the cathode shield body, the directivity is forcibly given to the substrate surface of the magnetic recording disk substrate. It is possible to form a thin film with good film quality. Further, since a negative voltage is applied to the cathode shield body as compared with the magnetic recording disk substrate, there is no adhesion of particles. Therefore, unlike the case of injecting the cooling gas from the vacuum chamber, the generation of particles can be prevented.

  In the present invention, when the forced cooling step is performed, a rectifying member that makes the flow of the cooling gas toward the magnetic recording disk substrate in a direction perpendicular to the magnetic recording disk substrate is disposed opposite to the magnetic recording disk substrate. When performing the sputter film forming step, it is preferable that the rectifying member is retracted from a position facing the magnetic recording disk substrate. In order to carry out such a manufacturing method, in the magnetic recording disk manufacturing apparatus, a rectifying member which makes the flow of the cooling gas introduced into the space inside the cathode shield body perpendicular to the magnetic recording disk substrate And a rectifying member driving device configured to drive the rectifying member between a facing position facing the magnetic recording disk substrate and a retracted position not facing the magnetic recording disk substrate.

  With this configuration, when the forced cooling process is performed, the cooling gas flows toward the magnetic recording disk substrate in a direction perpendicular to the magnetic recording disk substrate, so that the cooling gas efficiently reaches the magnetic recording disk substrate. To do. Therefore, the magnetic recording disk substrate is cooled to a predetermined temperature in a short time. In the sputter film forming step, the rectifying member is retracted from the position facing the magnetic recording disk substrate, so that the rectifying member does not interfere with the film formation. Therefore, the forced cooling process and the sputter film forming process can be performed in one film forming unit. Therefore, it is not necessary to add a cooling chamber, and impurities such as moisture accompanying the addition can be prevented from adhering to the magnetic recording disk surface.

  In another aspect of the present invention, in a method for manufacturing a magnetic recording disk in which a plurality of thin films including at least a recording layer are laminated on the surface of a magnetic recording disk substrate, at least one of the plurality of thin films is sputtered. In forming by the method, a forced cooling step of cooling the magnetic recording disk substrate by supplying a cooling gas to a space where the magnetic recording disk substrate and the target face each other, and the cooling by the forced cooling step A sputtering film forming step of forming a film on the magnetic recording disk substrate by a sputtering method, and when performing the forced cooling step, the flow of the cooling gas toward the magnetic recording disk substrate is perpendicular to the magnetic recording disk substrate. A rectifying member having a different direction is disposed opposite to the magnetic recording disk substrate, and the rectifying member is Wherein the retracting from the position opposed to the substrate for gas-recorded disc.

  Further, in the present invention, in the magnetic recording disk manufacturing apparatus provided with a plurality of film forming units for continuously laminating a plurality of thin films including at least a recording layer on the surface of the magnetic recording disk substrate, the plurality of film formations One of the portions includes a rectifying member that sets a flow of a cooling gas introduced into a space where the magnetic recording disk substrate and the target for sputtering film formation face each other in a direction perpendicular to the magnetic recording disk substrate And a rectifying member driving device configured to drive the rectifying member between a facing position facing the magnetic recording disk substrate and a retracted position not facing the magnetic recording disk substrate. .

  In the present invention, when the forced cooling process is performed, the cooling gas flows toward the magnetic recording disk substrate in a direction perpendicular to the magnetic recording disk substrate, so that the cooling gas efficiently reaches the magnetic recording disk substrate. Therefore, the magnetic recording disk substrate is cooled to a predetermined temperature in a short time. In the sputter film forming step, the rectifying member is retracted from the position facing the magnetic recording disk substrate, so that the rectifying member does not interfere with the film formation. Therefore, the forced cooling process and the sputter film forming process can be performed in one film forming unit. Therefore, it is not necessary to add a cooling chamber, and impurities such as moisture accompanying the addition can be prevented from adhering to the magnetic recording disk surface.

  In the present invention, when forming the recording layer among the plurality of thin films, the forced cooling step and the sputter film forming step are performed. In the sputter film forming step, a composite target is used between the magnetic particles. It is preferable to form a granular thin film in which a nonmagnetic separation base material is introduced. In this case, when starting the sputter film forming step, it is preferable to cool the magnetic recording disk substrate to 100 ° C. or less by the cooling step. When a recording layer of a perpendicular magnetic recording disk is formed as a granular film, for example, if the film formation is not started at 100 ° C. or lower, the granular component is segregated. However, according to the present invention, the magnetic recording disk substrate is shortened. Since it can be cooled in time, the magnetic recording disk substrate can be cooled to a temperature suitable for forming a granular thin film without reducing the throughput.

  In the present invention, it is preferable that the forced cooling step and the film forming step are alternately performed a plurality of times. According to the present invention, since the magnetic recording disk substrate can be cooled in a short time to a temperature suitable for forming a granular thin film, the throughput is greatly reduced even if the film formation is divided into a plurality of times. There is nothing. Further, when the granular thin film is formed by dividing cooling and film formation into a plurality of times, the grain size can be reduced.

  In the present invention, a cathode shield body is disposed in the vacuum chamber so as to surround the space where the magnetic recording disk substrate and the target face each other, and the cooling gas introduction path is formed in the space inside the cathode shield body. Introduce cooling gas. Therefore, it is not necessary to cool the entire vacuum chamber, and the cooling gas introduced from the cooling gas introduction path efficiently reaches the magnetic recording disk substrate, and the magnetic recording disk substrate is predetermined in a short time. Can be cooled to a temperature of In addition, since the sputter film forming process is performed in a state where the magnetic recording disk substrate and the target face each other with the cathode shield body, the directivity is forcibly given to the substrate surface of the magnetic recording disk substrate. It is possible to form a thin film with good film quality. Further, since a negative voltage is applied to the cathode shield body as compared with the magnetic recording disk substrate, there is no adhesion of particles. Therefore, unlike the case of injecting the cooling gas from the vacuum chamber, the generation of particles can be prevented.

  In the present invention, when the forced cooling process is performed, if the flow of the cooling gas toward the magnetic recording disk substrate is set in a direction perpendicular to the magnetic recording disk substrate by the rectifying member, the cooling gas is efficiently applied to the magnetic recording disk substrate. Reach well. Therefore, the magnetic recording disk substrate is cooled to a predetermined temperature in a short time. In the sputter film forming step, the rectifying member is retracted from the position facing the magnetic recording disk substrate, so that the rectifying member does not interfere with the film formation. Therefore, the forced cooling process and the sputter film forming process can be performed in one vacuum chamber. Therefore, it is not necessary to add a cooling chamber, and impurities such as moisture accompanying the addition can be prevented from adhering to the magnetic recording disk surface.

  Embodiments to which the present invention is applied will be described below with reference to the drawings. In each drawing to be referred to, the scale and magnification are made different for each layer and each member for easy recognition on the drawing.

(Outline of magnetic recording disk and manufacturing method thereof)
1A and 1B are a plan view showing a magnetic recording disk and a schematic sectional view of the magnetic recording disk, respectively. As shown in these drawings, the magnetic recording disk 1 of this embodiment has a seed layer 12, an antiferromagnetic layer 13, a soft magnetic layer 14, a nonmagnetic layer on the surface of a circular nonmagnetic substrate 11 having a center hole 111. The layer 15, the recording layer 16, the protective layer 17, and the lubricating layer 18 are stacked in this order.

  The nonmagnetic substrate 11 is a glass substrate such as amorphous, crystallized, or discrete. In this embodiment, chemically strengthened glass such as aluminosilicate glass is used. Here, the surface of the nonmagnetic substrate 11 is mirror-polished so that the surface roughness Ra is 0.3 nm or less and Rmax is 3 nm or less.

  While explaining the outline of the manufacturing process of such a magnetic recording disk 1, the structure of each thin film is demonstrated below. To manufacture the magnetic recording disk 1, as will be described in detail later, first, a seed layer 12 made of a CrTi alloy layer or the like is formed on the surface of the nonmagnetic substrate 11 by a DC magnetron sputtering method. Next, an antiferromagnetic layer 13 such as PtMn, FeMn, NiMn, or NiO is formed on the seed layer 12 by a DC magnetron sputtering method. Next, a soft magnetic layer 14 is formed on the antiferromagnetic layer 13 by DC magnetron sputtering. Here, when the soft magnetic layer is composed of one layer, it is made of CoTnZr or the like, but the soft magnetic layer such as CoTnZr is made up of a plurality of layers separated from each other by a nonmagnetic layer (spacer layer) such as Ru. It may be configured as an exchange coupling film. Next, the nonmagnetic layer 15 is formed on the soft magnetic layer 14 by DC magnetron sputtering. The nonmagnetic layer 15 has a function of adjusting the orientation of the recording layer 16. Here, the nonmagnetic layer 15 may be constituted by a lower first nonmagnetic layer made of NiTa, CrNiTa or the like and an upper second nonmagnetic layer made of Ru or the like. Next, the recording layer 16 is formed on the nonmagnetic layer 15 by DC magnetron sputtering.

In this embodiment, a composite target such as CoCrPtSiO ₂ is used as a target, the recording layer 16 is formed as a granular thin film in which a nonmagnetic separation base material is introduced between magnetic particles, and the magnetic recording disk 1 is a perpendicular magnetic recording type. As a recording medium.

  Next, a protective layer 17 is formed on the upper layer of the recording layer 16 by a plasma CVD method or the like. The protective layer 17 is made of, for example, amorphous diamond-like carbon having a thickness of 4 nm, and has a function of improving the wear resistance and protecting the recording layer 16. Next, the lubricating layer 18 is formed on the surface of the protective layer 17 by a dipping method or the like. The lubricating layer 18 is composed of, for example, a thin perfluoropolyether layer having a thickness of 1.2 nm, and has a function of mitigating an impact when contacting the magnetic head.

(Overall configuration of magnetic recording disk manufacturing equipment)
FIG. 2 is an explanatory view schematically showing an example of an in-line type single-wafer magnetic recording disk manufacturing apparatus according to the present invention.

  In this embodiment, when the seed layer 12, the antiferromagnetic layer 13, the soft magnetic layer 14, the nonmagnetic layer 15, the recording layer 16 and the protective layer 17 are formed on the surface of the nonmagnetic substrate 11, for example, as shown in FIG. A magnetic recording disk manufacturing apparatus 200 is used. Here, an intermediate product including the non-film-formed nonmagnetic substrate 11 (hereinafter referred to as a magnetic recording disk substrate 10) is conveyed through the magnetic recording disk manufacturing apparatus 200 while being held by a substrate holder 300. . The magnetic recording disk manufacturing apparatus 200 includes a preparation chamber 210 from the upstream side in the transport direction of the magnetic recording disk substrate 10 held by the substrate holder 300, a heating chamber 220 in which the substrate heating apparatus 400 is installed, A sputtering deposition vacuum chamber 230 including a film forming unit 100, a plasma CVD chamber 240, and an extraction chamber 250 are provided, and a predetermined target 110 is disposed in the plurality of film forming units 100.

(Configuration of film forming unit with forced cooling mechanism)
FIG. 3 is an explanatory view schematically showing a planar configuration of a film forming portion for forming a recording layer of the magnetic recording disk manufacturing apparatus according to the present invention. FIG. 4 is an explanatory diagram showing an example of a process sequence performed in the film forming unit shown in FIG.

  The configuration of the film forming unit 100 for forming the recording layer 16 among the plurality of film forming units 100 configured in the magnetic recording disk manufacturing apparatus 200 of this embodiment will be described in detail with reference to FIG.

As shown in FIG. 3, the film formation chamber 100 for forming the recording layer 16 is used for sputtering film formation so as to face both surfaces of a plurality of magnetic recording disk substrates 10 held by a substrate holder. A plurality of targets 110 are arranged in a state of being held by a target clamp 115, and a cooling plate 121 is arranged on the back surface thereof. In this embodiment, since film formation is performed by DC magnetron sputtering in the film formation chamber 100, a cathode magnet 123 is disposed on the back surface of the cooling plate 121, and a cathode yoke 125 is disposed on the back surface of the cathode magnet 123. Further, a process gas inlet 130 for introducing a process gas such as argon into the film forming unit 100 is opened in the wall surface of the vacuum chamber 230 in the film forming unit 100. Here, the wall surface of the vacuum chamber 230 is subjected to electrolytic treatment. In addition, the vacuum chamber 230 is provided with a cryopump 140 (exhaust pump) for exhausting the film forming unit 100 under the vacuum chamber 230, thereby realizing a vacuum degree of 10 ⁻⁴ (Pa) in the vacuum chamber 230. It is possible.

In the vacuum chamber 230, a cylindrical cathode shield body 160 is disposed so as to surround the space 150 where the magnetic recording disk substrate 10 and the target 110 face each other. Here, the cathode shield body 160 is an aluminum or SUS donut body surface-treated by aluminum blast, alumina spraying, SiO ₂ plating, or the like, and is held by the target clamp 115.

  In this embodiment, a cooling gas introduction pipe 170 (cooling gas introduction path) for supplying a cooling gas such as argon gas or helium gas is disposed in the space 150 so as to be along the body of the cathode shield body 160. The cooling introduction tube 170 is opened at the body of the cathode shield body 160, and a cooling gas introduction port 172 is formed. A cover 174 is disposed in front of the cooling gas inlet 172.

  Furthermore, in this embodiment, a plate-like rectifying member 180 is disposed so as to face the magnetic recording disk substrate 10, and the rectifying member 180 is moved up and down to face the magnetic recording disk substrate 10. A rectifying member driving device (not shown) that drives to a retracted position that does not face the magnetic recording disk substrate 10 is configured. Here, a number of holes are formed in the rectifying member 180, and the flow of the cooling gas introduced from the cooling gas inlet 172 into the cathode shield body 160 is set in a direction perpendicular to the magnetic recording disk substrate 10. It functions as a collimated shower plate. Therefore, the cooling gas introduced into the cathode shield body 160 from the cooling gas inlet 172 enters the magnetic recording disk substrate 10 via the rectifying member 180 inside the cathode shield body 160 as indicated by an arrow G. After hitting vertically, it flows to the cryopump 140.

In the film forming chamber 100 configured as described above, a composite target such as CoCrPtSiO ₂ is used as the target 110 in order to form the recording layer 16. Further, when the recording layer 16 is formed, processing is basically performed according to the process sequence shown in FIG. In FIG. 4, first, at time T1, the supply of the cooling gas, the process gas, and the discharge power is stopped. Further, the rectifying member 180 starts to move to a position facing the magnetic recording disk substrate 10.

  Next, at time T2, the rectifying member 180 stops at a position facing the magnetic recording disk substrate 10, and the supply of the cooling gas is started. Therefore, the cooling gas introduced into the cathode shield body 160 from the cooling gas inlet 172 passes through the rectifying member 180 inside the cathode shield body 160 as shown by an arrow G in FIG. After hitting the substrate 10 vertically, it flows to the cryopump 140. In this way, the forced cooling process is performed.

  Next, at time T3, the supply of the cooling gas is stopped, and the rectifying member 180 moves from the position facing the magnetic recording disk substrate 10 to the retracted position. Also, the introduction of process gas and the supply of discharge power are started.

  Next, at time T4, when the process gas is sealed in the vacuum chamber 230, the discharge is started and the sputter film formation of the recording layer 16 is started. In this way, the sputter film forming process is performed.

  Next, at time T5, the supply and discharge of the process gas are stopped. Simultaneously, the supply of the cooling gas is started, and the rectifying member 180 appears at a position facing the magnetic recording disk substrate 10. Therefore, the cooling gas introduced into the cathode shield body 160 from the cooling gas inlet 172 passes through the rectifying member 180 inside the cathode shield body 160 as shown by an arrow G in FIG. After hitting the substrate 10 vertically, it flows to the cryopump 140. In this way, the forced cooling process is performed.

  At time T6, the supply of the cooling gas is stopped, and the rectifying member 180 is moved from the position facing the magnetic recording disk substrate 10 to the retracted position.

(Example of film formation method)
FIG. 5 is a graph showing a temperature change when film formation is performed in the film forming section shown in FIG. In the present embodiment, the recording layer 16 is formed under the conditions shown in FIG. 5 using the process sequence shown in FIG. In FIG. 5, the temperature change of the film forming method to which the present invention is applied is indicated by a dotted line L1, and the temperature change when the film is formed in the film forming unit having the conventional configuration is indicated by a solid line L2.

  In FIG. 5, at time T10 to T11, the nonmagnetic layer 15 is formed under the condition that the temperature of the magnetic recording disk substrate 10 is 300.degree. Then, at time T11 to T12, the nonmagnetic layer 15 is formed under the condition that the temperature of the magnetic recording disk substrate 10 is 300 ° C.

  When the magnetic recording disk substrate 10 is transported to the film forming unit 100 for forming the recording layer 16 at time T11, the process sequence described with reference to FIG. 4 is performed at times T11 to T12. Thus, the first forced cooling process for the magnetic recording disk substrate 10 is performed. That is, the cooling gas introduced into the cathode shield body 160 from the cooling gas inlet 172 passes through the rectifying member 180 inside the cathode shield body 160 as shown by an arrow G in FIG. After hitting the substrate 10 vertically, it flows to the cryopump 140. As a result, the magnetic recording disk substrate 10 is forcibly cooled to a temperature of 100 ° C. or less in a short time.

  Next, at time T12 to T13, the first sputter film forming step is performed in a state where the magnetic recording disk substrate 10 is set to a temperature of 100 ° C. or lower. At this time, in order to increase the power in order to increase the film formation rate, the temperature of the magnetic recording disk substrate 10 rises to a temperature slightly below 150 ° C.

  Therefore, the second forced cooling process for the magnetic recording disk substrate 10 is performed in time T13 to T14 along the process sequence described with reference to FIG. At that time, the cooling gas introduced from the cooling gas inlet 172 to the inside of the cathode shield body 160 is magnetically recorded via the rectifying member 180 inside the cathode shield body 160 as indicated by an arrow G in FIG. After hitting the disk substrate 10 vertically, it flows to the cryopump 140. Therefore, the magnetic recording disk substrate 10 is forcibly cooled to a temperature of 100 ° C. or less in a short time.

  Next, in time T14 to T15, the second sputtering film forming step is performed in a state where the magnetic recording disk substrate 10 is set to a temperature of 100 ° C. or lower. At this time, in order to increase the power in order to increase the film formation rate, the temperature of the magnetic recording disk substrate 10 rises to a temperature slightly below 150 ° C.

As indicated by the solid line L2 in FIG. 5, the conventional film forming unit is not provided with a mechanism for forced cooling. Therefore, when each process is performed in the time shown in FIG. 5, the process is performed at time T12. When starting the film, the temperature of the magnetic recording disk substrate 10 is only lowered to about 150 ° C., and the recording layer 16 having good film quality cannot be formed, for example, the granular component SiO ₂ is segregated. .

(Effect of this embodiment)
As described above, in this embodiment, when the recording layer 16 is formed by the sputtering method, a cylindrical shape is formed so as to surround the space 150 where the magnetic recording disk substrate 10 and the target 110 face each other in the vacuum chamber 230. The cathode shield body 160 is disposed, and a cooling gas is supplied to the inside of the cathode shield body 160 to cool the magnetic recording disk substrate 10, and for the magnetic recording disk cooled in the forced cooling process. A sputter film forming step of forming a film on the substrate 10 by a sputtering method is performed. For this reason, it is not necessary to cool the entire vacuum chamber 230, and the cooling gas introduced from the cooling gas introduction pipe 170 efficiently reaches the magnetic recording disk substrate 10, and the magnetic recording disk substrate 10 is kept in a short time. Can be cooled to a predetermined temperature. Further, since a negative voltage is applied to the cathode shield body 160 as compared with the magnetic recording disk substrate 10, there is no adhesion of particles. Therefore, unlike the case of injecting the cooling gas from the vacuum chamber, the generation of particles can be prevented.

  In this embodiment, when the forced cooling process is performed, the rectifying member 180 that makes the flow of the cooling gas toward the magnetic recording disk substrate 10 in a direction perpendicular to the magnetic recording disk substrate 10 faces the magnetic recording disk substrate 10. When performing the sputtering film forming process, the rectifying member 180 is retracted from the position facing the magnetic recording disk substrate 10. For this reason, when performing the forced cooling step, the cooling gas efficiently reaches the magnetic recording disk substrate 10, so that the magnetic recording disk substrate 10 can be cooled to a predetermined temperature in a short time. In the sputter film forming step, the rectifying member 180 is retracted from the position facing the magnetic recording disk substrate 10, so that the rectifying member 180 does not get in the way during film formation. Therefore, the forced cooling process and the sputter film forming process can be performed in one film forming unit 100. Therefore, it is not necessary to add a cooling chamber, and impurities such as moisture accompanying the addition can be prevented from adhering to the magnetic recording disk surface.

  Particularly in this embodiment, when the recording layer 16 is formed, the sputter deposition process is started after the temperature of the magnetic recording disk substrate 10 is cooled to 100 ° C. or less by the forced cooling process. For this reason, even when the recording layer 16 is formed as a granular film for a perpendicular magnetic recording disk, the granular component is not segregated, and even when such a temperature condition is realized, the magnetic recording disk substrate 10 is used. Can be cooled within a short period of time, so that the throughput is not reduced.

  In addition, in this embodiment, when the recording layer 16 is formed, the forced cooling process and the film forming process are alternately performed a plurality of times, so that the grain size of the granular thin film can be reduced. In addition, even if the film forming process is divided in this way, the magnetic recording disk substrate 10 can be cooled in a short time, so that the throughput is not significantly reduced.

  Further, since the sputter film forming process is performed in a state where the cathode recording body 160 surrounds the space 150 where the magnetic recording disk substrate 10 and the target 110 face each other, the substrate surface of the magnetic recording disk substrate 10 is forced. Will have directivity. Therefore, when the recording layer 16 is formed, it is possible to form a film with high directivity, so that the recording layer 16 with good film quality can be formed.

(a) and (b) are a plan view showing a magnetic recording disk and a schematic sectional view of the magnetic recording disk, respectively. It is explanatory drawing which shows typically an example of the in-line type single-wafer | sheet-fed magnetic recording disk manufacturing apparatus based on this invention. It is explanatory drawing which shows typically the plane structure of the film-forming part for recording layer formation of the magnetic-recording-disk manufacturing apparatus based on this invention. It is explanatory drawing which shows an example of the process sequence performed in the film-forming part shown in FIG. It is a graph which shows the temperature change at the time of forming into a film in the film-forming part shown in FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Magnetic recording disk 10 Magnetic recording disk substrate 11 Nonmagnetic substrate 12 Seed layer 13 Antiferromagnetic layer 14 Soft magnetic layer 15 Nonmagnetic layer 16 Recording layer 17 Protective layer 18 Lubricating layer 100 Film forming chamber 110 Target 115 Target clamp 130 Process Gas inlet 140 Cryopump 150 Space 160 where the magnetic recording disk substrate and the target face each other 160 Cathode shield body 170 Cooling gas introduction pipe (cooling gas introduction path)
172 Cooling gas inlet 180 Rectifying member 200 Magnetic recording disk manufacturing apparatus 230 Vacuum chamber

Claims (9)

In a method of manufacturing a magnetic recording disk in which a plurality of thin films including at least a recording layer are laminated on the surface of a magnetic recording disk substrate,
When forming at least one of the plurality of thin films by a sputtering method, a cylindrical cathode shield body is provided in a vacuum chamber so as to surround a space where the magnetic recording disk substrate and the target face each other. And a forced cooling step of cooling the magnetic recording disk substrate by supplying a cooling gas to the inside of the cathode shield body, and sputtering the magnetic recording disk substrate cooled in the forced cooling step by sputtering. A method of manufacturing a magnetic recording disk, comprising performing a sputter film forming step of forming a film. When performing the forced cooling step, a rectifying member that makes the flow of the cooling gas directed to the magnetic recording disk substrate in a direction perpendicular to the magnetic recording disk substrate is disposed opposite to the magnetic recording disk substrate,
2. The method of manufacturing a magnetic recording disk according to claim 1, wherein when the sputter film forming step is performed, the rectifying member is retracted from a position facing the magnetic recording disk substrate. In a method of manufacturing a magnetic recording disk in which a plurality of thin films including at least a recording layer are laminated on the surface of a magnetic recording disk substrate,
For forming at least one of the plurality of thin films by sputtering, a cooling gas is supplied to a space where the magnetic recording disk substrate and the target face each other to forcibly cool the magnetic recording disk substrate. Performing a cooling step and a sputtering film forming step of forming a film by sputtering on the magnetic recording disk substrate cooled in the forced cooling step,
When performing the forced cooling step, a rectifying member that makes the flow of the cooling gas directed to the magnetic recording disk substrate in a direction perpendicular to the magnetic recording disk substrate is disposed opposite to the magnetic recording disk substrate;
A method of manufacturing a magnetic recording disk, wherein the rectifying member is retracted from a position facing the magnetic recording disk substrate when performing the sputter film forming step. Among the plurality of thin films, when forming the recording layer, performing the forced cooling step and the sputter film forming step,
3. The magnetic recording disk according to claim 1, wherein in the sputter film forming step, a granular thin film in which a nonmagnetic separation base material is introduced between magnetic particles is formed using a composite target. Method.   5. The method of manufacturing a magnetic recording disk according to claim 4, wherein, when the sputter film forming process is started, the magnetic recording disk substrate is cooled to 100 ° C. or less by the cooling process.   6. The method of manufacturing a magnetic recording disk according to claim 4, wherein the forced cooling step and the film forming step are alternately performed a plurality of times. In a magnetic recording disk manufacturing apparatus provided with a plurality of film forming units for continuously forming a plurality of thin films including at least a recording layer on the surface of a magnetic recording disk substrate,
In one of the plurality of film forming units, a cylindrical cathode shield body is disposed in a vacuum chamber so as to surround a space where the magnetic recording disk substrate and the sputtering film forming target face each other. And a cooling gas introduction path for supplying a cooling gas to the inside of the cathode shield body.   A rectifying member that makes the flow of the cooling gas introduced inside the cathode shield body a direction perpendicular to the magnetic recording disk substrate, a facing position where the rectifying member faces the magnetic recording disk substrate, and the magnetic recording 8. The magnetic recording disk manufacturing apparatus according to claim 7, further comprising a rectifying member driving device that drives between a retreat position that does not face the disk substrate. In a magnetic recording disk manufacturing apparatus provided with a plurality of film forming units for continuously forming a plurality of thin films including at least a recording layer on the surface of a magnetic recording disk substrate,
In one of the plurality of film forming units, a flow of a cooling gas introduced into a space where the magnetic recording disk substrate and the sputtering film forming target face each other is perpendicular to the magnetic recording disk substrate. And a rectifying member driving device for driving the rectifying member between a facing position facing the magnetic recording disk substrate and a retracted position not facing the magnetic recording disk substrate. A magnetic recording disk manufacturing apparatus.

Images