JP2007088489A - Semiconductor bonding film and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device using a semiconductor bonding film superior in reflow resistance by which a wafer and an adhesive can be bonded at a low temperature, and a semiconductor element and a support member for mounting the semiconductor element having a substrate step such as an organic substrate can be bonded at a low temperature without insufficiency in embedding property. <P>SOLUTION: Disclosed are the semiconductor bonding film which is composed of a resin composite containing epoxy resin, and contains thermoplastic resin for improving a low-temperature bonding property and reconciles adhesiveness and a flow property after the repetition of heat treatment by using a phenol nature curing agent as a curing agent of epoxy resin and imidazole as a hardening accelerator of epoxy resin; and manufacturing method of the semiconductor element characterized in that the semiconductor element and the support member for mounting the semiconductor element are bonded by using the semiconductor bonding film. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an adhesive film for a semiconductor and a semiconductor device.

Conventionally, a paste-like adhesive has been used for bonding a semiconductor element and a lead frame. In recent years, there has been a demand for higher density and higher integration of semiconductor devices in response to higher functionality of electronic devices.
In order to meet such requirements, for example, a lead-on-chip (LOC) structure in which a lead is bonded onto a semiconductor element is employed.

  However, since the semiconductor element and the lead frame are bonded in the LOC structure, the bonding reliability at the bonded portion greatly affects the reliability of the semiconductor package.

For example, in the LOC structure, a film adhesive obtained by applying an adhesive and a heat-resistant substrate such as a hot-melt adhesive film using a polyimide resin has been used (for example, see Patent Document 1).
However, since the hot-melt adhesive film needs to be bonded at a high temperature, it may cause thermal damage to a high-density semiconductor element and lead frame.

  Particularly in recent semiconductor packages, the chip is stacked in multiple stages on the chip, thereby realizing a reduction in size, thickness and capacity of the package. In such a package, the paste adhesive has problems such as a problem that occurs when the wire sticks out of the chip and the thickness of the adhesive layer is difficult to control. In order to solve such problems, film adhesives have been used.

  In addition, in order to realize high density and high integration of semiconductor devices, use of organic substrates such as bismaleimide-triazine substrates and polyimide substrates instead of lead frames is increasing. The surface of such an organic substrate has a surface step more than that of the lead frame, and the step embedding is a problem when using a film adhesive.

In the case of using a film adhesive, the step filling may be performed by using the pressure at the time of encapsulating the mold material, but in this case, the flowability at the sealing temperature is important for the adhesive layer. . However, as the number of chips increases and the thermal history of wire bonding and adhesive layer curing is excessive, the flow enough to embed the step of the substrate deteriorates due to the curing of the adhesive layer due to the thermal history. Problems such as insufficient embedding and void entrainment may occur.
JP-A-6-264035

  An object of the present invention is to provide an adhesive film for semiconductor and a semiconductor device, which can adhere a semiconductor element and a support member for mounting a semiconductor element such as a lead frame, an organic substrate, etc., and have excellent flowability and reflow resistance after thermal history. Is to provide.

Such an object is achieved by the present invention described in the following (1) to (7).
(1) A semiconductor adhesive film used for joining a semiconductor element and a support member, wherein the semiconductor adhesive film is composed of a resin composition containing a thermosetting resin, and the semiconductor adhesive film An adhesive film for a semiconductor, wherein the melt viscosity at 175 ° C. after heat treatment at 150 ° C. for 1 hour is 500 [Pa · s] or more and 5000 [Pa · s] or less. (2) The semiconductor adhesive film according to (1), wherein the semiconductor adhesive film has an elastic modulus at 240 ° C. of 1 to 50 MPa after heat treatment at 150 ° C. for 1 hour and further treatment at 175 ° C. for 2 hours.
(3) The adhesive film for a semiconductor according to (1) or (2), wherein the thermosetting resin is an epoxy resin.
(4) The adhesive film for a semiconductor according to any one of (1) to (3), wherein the resin composition contains a thermoplastic resin.
(5) The adhesive film for a semiconductor according to (4), wherein the thermoplastic resin is selected from the group consisting of a polyimide resin, a polyamide resin, and an acrylic resin.
(6) The adhesive film for a semiconductor according to (4) or (5), wherein the thermoplastic resin is an acrylic acid copolymer.
(7) A semiconductor device, wherein a semiconductor element and a semiconductor element mounting support member are joined using the semiconductor adhesive film described in any one of (1) to (6).

  ADVANTAGE OF THE INVENTION According to this invention, the semiconductor adhesive film and semiconductor device which can adhere | attach a semiconductor element and support members for mounting semiconductor elements, such as a lead frame and an organic substrate, and have excellent flow properties after heat history and reflow resistance Can be provided.

  The present invention is an adhesive film for a semiconductor used for joining a semiconductor element and a support member, wherein the adhesive film for a semiconductor is composed of a resin composition containing a thermosetting resin. A semiconductor adhesive film having a melt viscosity at 175 ° C. of 500 [Pa · s] or more and 5000 [Pa · s] or less after heat-treating the semiconductor adhesive film at 150 ° C. for 1 hour.

  The melt viscosity can be measured, for example, by using a rheometer, which is a viscoelasticity measuring device, by applying shear shear at a frequency of 1 Hz to a sample in a film state at a heating rate of 10 ° C./min.

  If the melt viscosity at 175 ° C. is 500 [Pa · s] or less, the melt viscosity at the time of heating may be excessively reduced and foaming may be caused by heat. Insufficient step filling is not sufficient.

  The heat history for 1 hour at 150 ° C. is a heat history assuming a wire bond or a thermosetting process, and the flowability at 175 ° C. is important because the mold material sealing temperature is usually 175 ° C.

  It is preferable that the elastic modulus at 240 ° C. after the semiconductor adhesive film is heat-treated at 150 ° C. for 1 hour and further treated at 175 ° C. for 2 hours is 1 to 50 MPa.

  If the elastic modulus at 240 ° C. is less than 1 MPa, peeling or voids may occur due to insufficient strength at the time of reflow resistance, and if it exceeds 50 MPa, the stress relaxation property is undesirably lowered.

Examples of the thermosetting resins include phenol novolac resins, cresol novolac resins, novolac type phenol resins such as bisphenol A novolac resins, phenol resins such as resol phenol resins, bisphenol type epoxies such as bisphenol A epoxy resins and bisphenol F epoxy resins. Resin, novolak epoxy resin, cresol novolak epoxy resin, etc., novolak epoxy resin, biphenyl type epoxy resin, stilbene type epoxy resin, triphenolmethane type epoxy resin, alkyl-modified triphenolmethane type epoxy resin, triazine nucleus-containing epoxy resin, di Epoxy resins such as cyclopentadiene-modified phenolic epoxy resins, resins with triazine rings such as urea (urea) resins and melamine resins, unsaturated Riesuteru resins, bismaleimide resins, polyurethane resins, diallyl phthalate resins, silicone resins, resins having a benzoxazine ring, cyanate ester resins, and the like. These may be used singly or in admixture. Among these, an epoxy resin is preferable, and thereby heat resistance and adhesion can be further improved.

The melting point of the epoxy resin is not particularly limited, but is preferably 50 to 150 ° C, particularly preferably 60 to 140 ° C. When the melting point is within the above range, particularly low-temperature adhesion can be improved.
The melting point can be evaluated by using, for example, a differential scanning calorimeter at the apex temperature of the endothermic peak of crystal melting that is heated from room temperature at a heating rate of 5 ° C./min.

When the thermosetting resin is an epoxy resin, the resin composition preferably contains a curing agent (particularly a phenolic curing agent).
Examples of the curing agent include aliphatic polyamines such as diethylenetriamine (DETA), triethylenetetramine (TETA), and metaxylylenediamine (MXDA), diaminodiphenylmethane (DDM), m-phenylenediamine (MPDA), and diaminodiphenylsulfone. In addition to aromatic polyamines such as (DDS), amine-based curing agents such as polyamine compounds including dicyandiamide (DICY) and organic acid dihydralazide, and fats such as hexahydrophthalic anhydride (HHPA) and methyltetrahydrophthalic anhydride (MTHPA) Acid anhydride curing agents such as aromatic acid anhydrides such as cyclic acid anhydride (liquid acid anhydride), trimellitic anhydride (TMA), pyromellitic anhydride (PMDA), benzophenone tetracarboxylic acid (BTDA) , Phenolic tree Phenolic curing agent and the like. Among these, a phenolic curing agent is preferable, and specifically, bis (4-hydroxy-3,5-dimethylphenyl) methane (common name: tetramethylbisphenol F), 4,4′-sulfonyldiphenol, 4,4′- Isopropylidene diphenol (commonly called bisphenol A), bis (4-hydroxyphenyl) methane, bis (2-hydroxyphenyl) methane, (2-hydroxyphenyl) (4-hydroxyphenyl) methane and bis (4-hydroxy) Bisphenols such as three mixtures of phenyl) methane, bis (2-hydroxyphenyl) methane, and (2-hydroxyphenyl) (4-hydroxyphenyl) methane (for example, bisphenol FD manufactured by Honshu Chemical Industry Co., Ltd.) , 1,2-benzenediol, 1,3-benzenediol Dihydroxybenzenes such as 1,4-benzenediol, trihydroxybenzenes such as 1,2,4-benzenetriol, various isomers of dihydroxynaphthalenes such as 1,6-dihydroxynaphthalene, 2,2′-biphenol, Examples of the compound include various isomers of biphenols such as 4,4′-biphenol.

  The content of the curing agent (particularly phenolic curing agent) of the epoxy resin is not particularly limited, but is preferably 1 to 100 parts by weight, particularly preferably 30 to 80 parts by weight with respect to 100 parts by weight of the epoxy resin. . If the content is less than the lower limit, the effect of improving the heat resistance may be reduced, and if the content exceeds the upper limit, the storage stability may be reduced.

  When the thermosetting resin is an epoxy resin, the resin composition preferably contains a curing accelerator (particularly an imidazole curing accelerator).

The epoxy resin curing accelerator is preferably imidazole, specifically 2-phenyl 4-methylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6- [2′-. Methylimidazolyl- (1 ′)]-ethyl-s-triazine, 2,4-diamino-6- [2′-undecylimidazolyl- (1 ′)]-ethyl-s-triazine, 2,4-diamino-6 -[2'-ethyl-4'methylimidazolyl- (1 ')]-ethyl-s-triazine, 2,4-diamino-6- [2'-methylimidazolyl- (1')]-ethyl-s-triazine Isocyanuric acid adduct, 2-phenylimidazole Isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymes Ruimidazole, 2,4-diamino-6-vinyl-s-triazine, 2,4-diamino-6-vinyl-s-triazine isocyanuric acid adduct, 2,4-diamino-6-methacryloyloxyethyl-s-triazine 2,4-diamino-6-methacryloyloxyethyl-s-triazine isocyanuric acid adduct, and the like.

  The particle size of the epoxy resin curing accelerator is preferably 10 μm or less. If it exceeds 10 μm, the reactivity as a curing accelerator may be lowered.

  The content of the epoxy resin curing accelerator (particularly the imidazole curing accelerator) is not particularly limited, but is preferably 0.01 to 10 parts by weight, particularly 0.05 with respect to 100 parts by weight of the epoxy resin. -3 parts by weight is preferred. If the content is less than the lower limit, the effect of improving the heat resistance may be reduced, and if the content exceeds the upper limit, the storage stability may be reduced.

  The resin used in the present invention preferably contains a thermoplastic resin in terms of improving adhesive strength and cohesive strength. Moreover, it is preferable that the glass transition temperature of this thermoplastic resin is -20-120 degreeC. Furthermore, -20-60 degreeC is more preferable, and -10-50 degreeC is especially preferable. When the glass transition temperature is less than the lower limit value, the adhesive strength of the adhesive film for a semiconductor may be increased and workability may be reduced. When the glass transition temperature exceeds the upper limit value, the effect of improving the low temperature adhesive property may be reduced.

Examples of the thermoplastic resin include polyimide resins such as polyimide resins and polyetherimide resins, polyamide resins such as polyamide resins and polyamideimide resins, and acrylic resins.
Among these, acrylic resins are preferable. Thereby, since the glass transition temperature is low, initial adhesiveness can be improved.

  The acrylic resin means acrylic acid and derivatives thereof, specifically acrylic acid esters such as acrylic acid, methacrylic acid, methyl acrylate and ethyl acrylate, and methacrylic acid esters such as methyl methacrylate and ethyl methacrylate. , Polymers such as acrylonitrile and acrylamide, and copolymers with other monomers.

  In addition, an acrylic resin (particularly an acrylic acid copolymer) having a compound having an epoxy group, a hydroxyl group, a carboxyl group, a nitrile group, or the like is preferable. Thereby, the adhesiveness to adherends, such as a semiconductor element, can be improved more. Specific examples of the compound having a functional group include glycidyl methacrylate having a glycidyl ether group, hydroxy methacrylate having a hydroxyl group, carboxy methacrylate having a carboxyl group, and acrylonitrile having a nitrile group.

The content of the compound having a functional group is not particularly limited, but is preferably 0.1 to 30% by weight, and particularly preferably 0.5 to 20% by weight, based on the entire acrylic resin. When the content is less than the lower limit, the effect of improving the adhesion may be reduced, and when the content exceeds the upper limit, the adhesive force is too strong and the effect of improving the workability may be reduced.

  The weight average molecular weight of the acrylic resin is not particularly limited, but is preferably 100,000 or more, particularly preferably 150,000 to 1,000,000. When the weight average molecular weight is within the above range, the film forming property of the adhesive film for a semiconductor can be improved.

  Although content of the said acrylic acid copolymer is not specifically limited, 30-500 weight part is preferable with respect to 100 weight part of said epoxy resins, and 50-300 weight part is especially preferable. When the content is less than or equal to the lower limit value, the film forming property may be deteriorated, and when the content exceeds the upper limit value, the heat resistance may be decreased.

The resin composition preferably further contains a coupling agent. Thereby, the adhesiveness between the resin and the adherend and between the resin and the silica interface can be improved.
Examples of the coupling agent include silane-based, titanium-based, and aluminum-based, among which silane-based coupling agents are preferable.

  Examples of the coupling agent include vinyltrichlorosilane, vinyltrimethoxysilane, vinyltriethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxy. Propylmethyldimethoxysilane, γ-methacryloxypropyltrimethoxysilane, γ-methacryloxypropylmethyldiethoxysilane, γ-methacryloxypropyltriethoxysilane, N-β (aminoethyl) γ-aminopropylmethyldimethoxysilane, N- β (aminoethyl) γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltriethoxysilane, γ-aminopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, N-phenyl -Γ-aminopropyltrimethoxysilane, γ-chloropropyltrimethoxysilane, γ-mercaptopropyltrimethoxysilane, 3-isocyanatopropyltriethoxysilane, 3-acryloxypropyltrimethoxysilane and the like.

  Although content of the said coupling agent is not specifically limited, 0.01-10 weight part is preferable with respect to 100 weight part of said epoxy resins, and 0.5-10 weight part is especially preferable. If the content is less than the lower limit, the effect of adhesion may be insufficient, and if it exceeds the upper limit, it may cause outgassing or voids.

The adhesive film for semiconductors of the present invention is prepared by, for example, dissolving the resin composition in a solvent such as methyl ethyl ketone, acetone, toluene, dimethylformaldehyde, etc. to make a varnish, and then using a comma coater, die coater, gravure coater, etc. It is obtained by coating on a carrier film and drying.
Although the thickness of the said adhesive film for semiconductors is not specifically limited, 3-100 micrometers is preferable and 5-70 micrometers is especially preferable. When the thickness is within the above range, it is particularly easy to control the thickness accuracy.

Next, the semiconductor device of the present invention will be described.
The obtained adhesive film for semiconductor can be used for bonding a semiconductor element and a metal lead frame, a substrate in which glass fiber is impregnated with an epoxy resin, a polyimide substrate, a bismaleimide-triazine resin substrate, or other organic substrate.

As bonding conditions, the semiconductor element and the semiconductor mounting support member are pressure-bonded via the adhesive film at a temperature of 80 to 200 ° C. for a time of 0.1 to 30 seconds. Thereafter, if necessary, the semiconductor device can be obtained through wire bonding and sealing with a sealing material.
EXAMPLES Hereinafter, although this invention is demonstrated in detail based on an Example and a comparative example, this invention is not limited to this.

First, examples of the adhesive for semiconductors and comparative examples will be described.
Example 1
1. Preparation of adhesive film resin varnish for semiconductor Acrylic acid copolymer (ethyl acrylate-acrylonitrile-N, N dimethylacrylamide-glycidyl methacrylate copolymer, manufactured by Nagase ChemteX Corporation, SG-80H, Tg: 15 as a thermoplastic resin C., weight average molecular weight: 350,000) 100 parts by weight and crystalline cresol novolac epoxy resin (EOCN-1020-80, epoxy equivalent 200 g / eq, Nippon Kayaku Co., Ltd.) 30 weights as thermosetting resin Parts, epoxy resin (NC6000, epoxy equivalent 197 g / eq, Nippon Kayaku Co., Ltd.) 50 parts by weight, phenol curing agent (MEH7500, Meiwa Kasei Co., Ltd.) 40 parts by weight, imidazole compound as a curing accelerator ( 2PHZ-PW, manufactured by Shikoku Kasei Co., Ltd., average particle size of about 2 μm) 0 Resin having a resin solid content of 40% by dissolving 2 parts by weight, 0.2 part by weight of γ-glycidoxypropyltrimethoxysilane (KBM403, manufactured by Shin-Etsu Chemical Co., Ltd.) as a coupling agent in methyl ethyl ketone (MEK) A varnish was obtained.

2. Manufacture of adhesive film for semiconductor After applying the above-mentioned resin varnish to a polyethylene terephthalate film (manufactured by Oji Paper Co., product number RL-07, thickness 38 μm) as a carrier film using a comma coater, it is dried at 70 ° C. for 10 minutes. Thus, an adhesive film for a semiconductor having a thickness of 25 μm with a carrier film was obtained.
The melt viscosity at 175 ° C. after heat-treating the obtained adhesive film for semiconductor at 150 ° C. for 1 hour was 2000 [Pa · s].

(Example 2)
The same procedure as in Example 1 was carried out except that the composition of the adhesive film resin varnish for semiconductor was as follows.
Acrylic acid copolymer (ethyl acrylate-acrylonitrile-N, N dimethylacrylamide-glycidyl methacrylate copolymer, manufactured by Nagase ChemteX Corp., SG-80H, Tg: 15 ° C., weight average molecular weight: 350, as a thermoplastic resin 000) 100 parts by weight, as a thermosetting resin, cresol novolac epoxy resin (EOCN-1020-80, epoxy equivalent 200 g / eq, manufactured by Nippon Kayaku Co., Ltd.), 30 parts by weight, epoxy resin (NC6000, epoxy resin 197 g / eq, manufactured by Nippon Kayaku Co., Ltd.) 50 parts by weight, phenol curing agent (MEH7500, manufactured by Meiwa Kasei Co., Ltd.) 40 parts by weight, and an imidazole compound (2MA-OK-PW, Shikoku Chemicals Co., Ltd.) as a curing accelerator Manufactured, melting point 260 ° C., average particle size 2 μm) 0.2 parts by weight, coupling agent To γ- glycidoxypropyltrimethoxysilane (KBM403, manufactured by Shin-Etsu Chemical Co.) was used and 1 part by weight.
The melt viscosity at 175 ° C. after heat-treating the obtained adhesive film for semiconductor at 150 ° C. for 1 hour was 2500 [Pa · s].

(Example 3)
The same procedure as in Example 1 was carried out except that the composition of the adhesive film resin varnish for semiconductor was as follows.
Acrylic acid copolymer (ethyl acrylate-acrylonitrile-N, N dimethylacrylamide-glycidyl methacrylate copolymer, manufactured by Nagase ChemteX Corp., SG-80H, Tg: 15 ° C., weight average molecular weight: 350, as a thermoplastic resin 000) 100 parts by weight and crystalline cresol novolac epoxy resin (EOCN-10) as a thermosetting resin
20-80, epoxy equivalent 200 g / eq, Nippon Kayaku Co., Ltd.) 30 parts by weight, epoxy resin (NC6000, epoxy equivalent 197 g / eq, Nippon Kayaku Co., Ltd.) 50 parts by weight, phenol curing agent ( MEH7500, manufactured by Meiwa Kasei Co., Ltd.) 30 parts by weight, imidazole compound (2PHZ-PW, manufactured by Shikoku Kasei Co., Ltd., average particle size of about 2 μm) as a curing accelerator, 0.1 part by weight, and γ-Glyco as a coupling agent Sidoxypropyltrimethoxysilane (KBM403, manufactured by Shin-Etsu Chemical Co., Ltd.) 0.1 parts by weight was used.
The melt viscosity at 175 ° C. after heat-treating the obtained adhesive film for semiconductor at 150 ° C. for 1 hour was 1000 [Pa · s].

Example 4
The same procedure as in Example 1 was carried out except that the composition of the adhesive film resin varnish for semiconductor was as follows.
Silicone-modified polyimide resin as the thermoplastic resin, specifically 2,2-bis [4- (4-aminophenoxy) phenyl] propane (0.09 mol) and α, ω-bis (3-aminopropyl) as the diamine component Polyimide resin (Tg: 30 ° C., weight average) using 4,4′-oxydiphthalic dianhydride (0.30 mol) as an acid component with respect to polydimethylsiloxane (average molecular weight 837) (0.21 mol) Molecular weight: 50,000) 100 parts by weight, crystalline cresol novolac epoxy resin (EOCN-1020-80, epoxy equivalent 200 g / eq, manufactured by Nippon Kayaku Co., Ltd.) as a thermosetting resin, epoxy 50 parts by weight of resin (NC6000, epoxy equivalent 197 g / eq, manufactured by Nippon Kayaku Co., Ltd.), phenol curing agent (MEH7500, Meiwa Kasei) Co., Ltd.) 30 parts by weight, imidazole compound (2PHZ-PW, Shikoku Kasei Co., Ltd., average particle size of about 2 μm) as a curing accelerator, 0.1 part by weight, γ-glycidoxypropyltri as a coupling agent Methoxysilane (KBM403, manufactured by Shin-Etsu Chemical Co., Ltd.) 0.1 parts by weight was used.
The melt viscosity at 175 ° C. after heat-treating the obtained adhesive film for semiconductor at 150 ° C. for 1 hour was 3000 [Pa · s].

(Comparative Example 1)
The same procedure as in Example 1 was carried out except that the composition of the adhesive film resin varnish for semiconductor was as follows.
Acrylic acid copolymer (ethyl acrylate-butyl acrylate-acrylonitrile-acrylic acid-hydroxyethyl acrylate copolymer, manufactured by Nagase ChemteX Corp., SG-708-6DR, Tg: 6 ° C., weight average molecular weight as thermoplastic resin : 800,000) 100 parts by weight, cresol novolac epoxy resin (EOCN-1020-80, epoxy equivalent 200 g / eq, manufactured by Nippon Kayaku Co., Ltd.) as a thermosetting resin, and epoxy resin (NC6000, Epoxy equivalent 197 g / eq, Nippon Kayaku Co., Ltd. 20 parts by weight, imidazole compound (1B2MZ, Shikoku Kasei Co., Ltd., melting point 50 ° C., liquid) 3 parts by weight as a curing accelerator, and γ as a coupling agent -Glycidoxypropyltrimethoxysilane (KBM403, Shin-Etsu Chemical Co., Ltd. Ltd.) was used and 0.2 parts by weight.
The melt viscosity at 175 ° C. after heat-treating the obtained adhesive film for semiconductor at 150 ° C. for 1 hour was 7000 [Pa · s].

(Comparative Example 2)
The same procedure as in Example 1 was carried out except that the composition of the adhesive film resin varnish for semiconductor was as follows.
Acrylic acid copolymer (ethyl acrylate-acrylonitrile-N, N dimethylacrylamide-glycidyl methacrylate copolymer, manufactured by Nagase ChemteX Corp., SG-80H, Tg: 15 ° C., weight average molecular weight: 350, as a thermoplastic resin 000) 100 parts by weight and 50 parts by weight of a crystalline cresol novolac epoxy resin (EOCN-1020-80, epoxy equivalent 200 g / eq, Nippon Kayaku Co., Ltd., melting point 80 ° C.) as a thermosetting resin, 5 parts by weight of an imidazole compound (2MA-OK-PW, manufactured by Shikoku Kasei Co., Ltd., average particle size 2 μm) as an accelerator, and γ-glycidoxypropyltrimethoxysilane (KBM403, Shin-Etsu Chemical Co., Ltd.) as a coupling agent Made by dissolving 1 part by weight in methyl ethyl ketone (MEK) A resin varnish was obtained.
The melt viscosity at 175 ° C. after heat-treating the obtained adhesive film for semiconductor at 150 ° C. for 1 hour was 8000 [Pa · s].

Next, a semiconductor device will be described.
(Example 1 to Example 4)
3. Semiconductor Device Manufacturing The adhesive film with carrier tape obtained in Examples 1 to 4 was attached to the adhesive film side with the back surface of a 5-inch 550 μm wafer at 100 ° C. to obtain a wafer with carrier tape and adhesive film.
Thereafter, a dicing film was attached to the carrier tape surface. Then, using a dicing saw, the semiconductor wafer to which the adhesive film with the carrier tape is bonded is diced (cut) into a semiconductor element size of 5 mm × 5 mm square at a spindle rotation speed of 30,000 rpm and a cutting speed of 50 mm / sec. A semiconductor element to which the film and the carrier tape were bonded was obtained. Next, the semiconductor element pushed up from the back surface of the dicing sheet and peeled between the carrier tape adhesive film layers and bonded to the adhesive film was pressure-bonded to a bismaleimide-triazine substrate at 130 ° C., 1 MPa for 1.0 second, and die bonded, Heated at 150 ° C. for 1 hour, sealed with resin, and cured at 175 ° C. for 2 hours to obtain 10 semiconductor devices.
(Comparative Examples 1 to 2)
The same procedure as in Example 1 was performed except that the adhesive film with carrier tape obtained in Comparative Examples 1 and 2 was used as the adhesive film for semiconductor.

The following evaluation was performed regarding the adhesive film for semiconductor and the semiconductor device obtained in each Example and Comparative Example. The evaluation items are shown together with the contents. The obtained results are shown in Table 1.
1. Embeddability A glass chip with a die attach film was die-bonded at 130 ° C./1 MPa / 1 s on a bismaleimide-triazine substrate having an average of 10 μm unevenness, and heat-treated at 150 ° C. for 1 hour. Thereafter, pressurization was performed with a load of 175 ° C./7 MPa / 30 s, and the embedding property of unevenness was observed. The embedding property was evaluated as a percentage of the embedded area of the original film area.
A: Embeddability is 90% or more B: Embeddability is less than 70 to 90% Δ: Embeddability is less than 50 to 70% ×: Embeddability is less than 50%

2. Dicing property After the semiconductor wafer was diced, it was evaluated by the number of semiconductor elements peeled off from the dicing film due to weak adhesion.
A: The percentage of semiconductor elements that did not scatter was 95% or more. O: The percentage of semiconductor elements that did not scatter was 90 to less than 95%. △: The percentage of semiconductor elements that did not scatter was 50 to 50%. Less than 90% ×: The proportion of semiconductor elements that did not scatter is less than 50%

3. Pickup property It was evaluated whether a semiconductor element bonded with a die attach film can be picked up (pickup) from the light-transmitting substrate.
A: The ratio of semiconductor elements that can be picked up is 95% or more. ○: The ratio of semiconductor elements that can be picked up is 90 to less than 95%. Δ: The ratio of semiconductor elements that can be picked up is less than 50 to 90%. X: The ratio of semiconductor elements that can be picked up is less than 50%.

4). Initial adhesiveness of adhesive film Adhesiveness between die attach film and bismaleimide-triazine substrate is as follows: semiconductor element bonded to die attach film and bismaleimide-triazine substrate under conditions of 130 ° C, 1 MPa, 1.0 sec. The shear strength between the chip and the lead frame was evaluated in the state of bonding and untreated (before curing).
A: Shear strength is 1.0 MPa or more. O: Shear strength is 0.75 or more and less than 1.0 MPa. Δ: Shear strength is 0.5 or more and less than 0.75 MPa. Shear strength is less than 0.5 MPa

5. Adhesiveness after moisture absorption treatment The semiconductor devices obtained in each Example and Comparative Example were subjected to moisture absorption treatment at 85 ° C./85% RH / 168 hours, and then the shear strength between the semiconductor element and the lead frame was evaluated.
A: Shear strength is 1.0 MPa or more. O: Shear strength is 0.75 or more and less than 1.0 MPa. Δ: Shear strength is 0.5 or more and less than 0.75 MPa. Shear strength is less than 0.5 MPa

6). Crack resistance Crack resistance is determined by scanning ultrasonic flaw detection by subjecting the semiconductor devices obtained in the examples and comparative examples to moisture absorption treatment at 85 ° C./60% RH / 168 hours, followed by IR reflow at 260 ° C. three times. Machine (SAT). Each code is as follows.
◎: No crack at all ○: No crack at 7/10 or more △: There are 9/10 or more cracks and less than 7/10 ×: There are 10/10 cracks

  As is clear from Table 1, Examples 1 to 4 were excellent in embedding property, initial property and adhesion after moisture absorption, excellent in pick-up property without chip scattering, and excellent in crack resistance.

Claims (7)

A semiconductor adhesive film used for joining a semiconductor element and a support member, wherein the semiconductor adhesive film is composed of a resin composition containing a thermosetting resin, and the semiconductor adhesive film is heated to 150 ° C. The melt viscosity at 175 ° C. after heat treatment for 1 hour at 500 [Pa ·
s] or more and 5000 [Pa · s] or less, an adhesive film for semiconductors. The semiconductor adhesive film according to claim 1, wherein the semiconductor adhesive film has an elastic modulus at 240 ° C of 1 to 50 MPa after heat treatment at 150 ° C for 1 hour and further treatment at 175 ° C for 2 hours. The adhesive film for semiconductor according to claim 1, wherein the thermosetting resin is an epoxy resin. The adhesive film for semiconductor according to any one of claims 1 to 3, wherein the resin composition contains a thermoplastic resin. The adhesive film for a semiconductor according to claim 4, wherein the thermoplastic resin is selected from the group consisting of a polyimide resin, a polyamide resin, and an acrylic resin. The adhesive film for a semiconductor according to claim 4 or 5, wherein the thermoplastic resin is an acrylic acid copolymer. A semiconductor device, wherein the semiconductor element and the semiconductor element mounting support member are joined using the adhesive film for semiconductor according to claim 1.