JP2007070707A - Vacuum deposition apparatus and vacuum deposition method - Google Patents

Vacuum deposition apparatus and vacuum deposition method Download PDF

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JP2007070707A
JP2007070707A JP2005261103A JP2005261103A JP2007070707A JP 2007070707 A JP2007070707 A JP 2007070707A JP 2005261103 A JP2005261103 A JP 2005261103A JP 2005261103 A JP2005261103 A JP 2005261103A JP 2007070707 A JP2007070707 A JP 2007070707A
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substrate
crucible
base material
molten metal
width direction
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JP4721107B2 (en
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Hideaki Awata
英章 粟田
Katsuji Emura
勝治 江村
Kentaro Yoshida
健太郎 吉田
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Sumitomo Electric Industries Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a vacuum deposition apparatus capable of forming a uniform film on a long belt-like substrate without causing the thermal damage of a crucible and the substrate as well as capable of being simple in the structures of devices configured in the vacuum deposition apparatus, and to provide a vacuum deposition method. <P>SOLUTION: The vacuum deposition apparatus 1 is provided with a substrate conveyor 4 that allows a long belt-like substrate 5 to continuously travel in a vacuum chamber 2 and a crucible 3 for holding a molten evaporation material. The substrate conveyor 4 conveys the substrate 5 in a manner that it is inclined to such a scope that the width direction of the surface of the substrate 5 makes an angle of 7° to 47° with the surface of a molten evaporation material in the crucible 3 in forming a film on the substrate 5. Film formation is carried out by vacuum-depositing molecules evaporated from the evaporation material molten in the crucible 3 on the substrate 5 continuously travelled by the substrate conveyor 4 so as to form the film with uniform thickness. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、真空チャンバー内で、基材搬送装置により連続走行する長尺帯状基材に、ルツボ内で溶融された蒸発材料の蒸発分子を蒸着する真空蒸着装置および真空蒸着方法に関する。   The present invention relates to a vacuum deposition apparatus and a vacuum deposition method for depositing evaporated molecules of an evaporation material melted in a crucible on a long belt-like substrate that continuously travels by a substrate transport device in a vacuum chamber.

長尺帯状基材を連続走行させながら、蒸着を行う場合、一般に、真空チャンバー内に配置したルツボ内の蒸発材料を溶融させ、蒸発材料の溶湯から蒸発した蒸気を基材に蒸着させて成膜する方法が行われている。   When vapor deposition is performed while continuously running a long belt-like substrate, generally, the evaporation material in a crucible placed in a vacuum chamber is melted, and vapor evaporated from the molten evaporation material is deposited on the substrate to form a film. The way to be done.

ところで、ルツボは、通常、長尺帯状基材の幅方向中央部の下方に配置させており、ルツボから蒸発材料を蒸発させたときに、その蒸発流は、扇状に拡散する。   By the way, the crucible is usually disposed below the central portion in the width direction of the long belt-like base material, and when the evaporation material is evaporated from the crucible, the evaporation flow diffuses in a fan shape.

ここで、ルツボの中心を原点0とし、ルツボの溶湯面に平行に長尺帯状部材Xを配置した場合、この原点0と長尺帯状基材Xの幅方向中央部aとを結ぶ直線における立体角dφ内の基材の面積(Sa1)と、原点0と基材の幅方向端部bとを結ぶ直線における立体角dφ内の基材の面積(Sb)とを図3に示す。   Here, when the center of the crucible is set to the origin 0, and the long strip member X is arranged in parallel to the molten metal surface of the crucible, the solid in the straight line connecting the origin 0 and the central portion a in the width direction of the long strip substrate X FIG. 3 shows the area (Sa1) of the base material within the angle dφ and the area (Sb) of the base material within the solid angle dφ on the straight line connecting the origin 0 and the width direction end b of the base material.

図3において、面積(Sa1)と面積(Sb)とを比較すると、面積(Sb)は面積(Sa1)よりも面積が大きくなる。しかし、これらの面積内に蒸着する蒸発分子(フラックス)の数は等しいので、基材の幅方向端部側ほど膜厚が薄くなる。   In FIG. 3, when the area (Sa1) is compared with the area (Sb), the area (Sb) is larger than the area (Sa1). However, since the number of evaporation molecules (flux) deposited in these areas is equal, the film thickness becomes thinner toward the end in the width direction of the substrate.

このようにルツボと長尺帯状基材とを配置すると、図4のグラフにおける四角点のプロット線で示したように、長尺帯状基材の幅方向中央部で成膜された膜厚が、最も厚く、幅方向端部側が最も膜厚が薄くなり、膜厚分布の不均一が生じていた。   When the crucible and the long belt-like substrate are arranged in this way, the film thickness formed at the central portion in the width direction of the long belt-like substrate, as shown by the square plot lines in the graph of FIG. The film thickness was the thickest and the film thickness was the thinnest at the end in the width direction, resulting in nonuniform film thickness distribution.

そこで、基材の幅方向にできるだけ均一に成膜するため、特許文献1に示すように、板状の基材の下方に、基材の幅方向に延びる長尺状のルツボを設け、このルツボの上面を封鎖状にし、この上面に長手方向に沿って複数の孔を形成したものが提案されている。さらに、特許文献1では、ルツボの上面における長手方向両端部を基材の幅方向中央に向けて傾斜させている。特許文献1では、ルツボ内で溶融した蒸発材料を複数の孔から蒸発させて、基材の幅方向の一端部から他端部まで満遍なく蒸着させるようにしている。   Therefore, in order to form a film as uniformly as possible in the width direction of the base material, as shown in Patent Document 1, a long crucible extending in the width direction of the base material is provided below the plate-like base material, and this crucible is provided. The upper surface of each has been sealed, and a plurality of holes are formed on the upper surface along the longitudinal direction. Furthermore, in patent document 1, the longitudinal direction both ends in the upper surface of a crucible are made to incline toward the center of the width direction of a base material. In Patent Document 1, the evaporation material melted in the crucible is evaporated from a plurality of holes and uniformly deposited from one end to the other end in the width direction of the substrate.

特開2004-269948号公報JP 2004-269948 A

しかしながら、特許文献1に示すルツボは、長尺帯状基材の幅よりも長く形成し、しかも、このルツボには、ルツボの長さにほぼ相当する溶湯貯留部を形成して、この溶湯貯留部で溶融した蒸発材料を各孔からルツボ外部へと蒸発させるようにしている。   However, the crucible shown in Patent Document 1 is formed longer than the width of the long belt-like base material, and the crucible is formed with a molten metal reservoir that substantially corresponds to the length of the crucible. The evaporating material melted in step 1 is evaporated from each hole to the outside of the crucible.

このように、特許文献1では、長尺なルツボを使用するため、ルツボの溶湯面積(溶湯貯留部に溜まる溶湯の液面積)が、前記した従来のルツボに比べて必然的に大きくなり、基材が受ける輻射熱量が大きくなってしまう。そのため、基材に形成される膜の幅方向の膜厚分布は従来に比べて均一に近くなるが、基材温度の上昇が起こり、基材が熱による物性変化を引き起こしてしまうという不具合がある。   As described above, in Patent Document 1, since a long crucible is used, the molten metal area of the crucible (the liquid area of the molten metal accumulated in the molten metal reservoir) is inevitably larger than that of the conventional crucible described above. The amount of radiant heat received by the material increases. Therefore, the film thickness distribution in the width direction of the film formed on the base material is more uniform than the conventional one, but there is a problem that the base material temperature rises and the base material causes a change in physical properties due to heat. .

また、基材温度の上昇を防ぐために、基材をルツボから離して、具体的には基材とルツボとの距離が300mm以上となるように配置すると、前記した従来の蒸着方法と同様に蒸着分子の拡散により基材の端部の膜厚が薄くなってしまう。   In addition, in order to prevent the substrate temperature from rising, if the substrate is placed away from the crucible, specifically, the distance between the substrate and the crucible is 300 mm or more, vapor deposition is performed in the same manner as the conventional vapor deposition method described above. The film thickness at the edge of the substrate becomes thin due to the diffusion of molecules.

さらに、理論上、溶湯面から基材までの距離の2乗に比例して、蒸着速度が低下するため、溶湯面から基材までの距離が、大きくなればなるほど、生産効率が低下してしまう。   Furthermore, theoretically, the deposition rate decreases in proportion to the square of the distance from the molten metal surface to the base material, so that the production efficiency decreases as the distance from the molten metal surface to the base material increases. .

また、特許文献1では、ルツボ上面の両端部を傾斜させているため、ルツボやルツボを加熱する熱源(特に抵抗加熱の場合)の製作が困難になるとともに、ルツボ上面の傾斜の変曲点に熱応力が集中し割れが生じやすくなる。このように、ルツボに割れが生ずると、安定して成膜加工ができない。   Further, in Patent Document 1, since both ends of the upper surface of the crucible are inclined, it becomes difficult to manufacture a crucible and a heat source for heating the crucible (especially in the case of resistance heating), and at the inflection point of the inclination of the upper surface of the crucible. Thermal stress concentrates and cracks are likely to occur. As described above, when the crucible is cracked, the film forming process cannot be stably performed.

そこで、本発明は、真空蒸着装置内に配設する機器の構成を簡単にできながら、ルツボの熱によるルツボおよび長尺帯状基材の破損が生ずることなく、基材に均一な膜を形成できる真空蒸着装置および真空蒸着方法を提供することを目的とする。   Therefore, the present invention can form a uniform film on the base material without causing damage to the crucible and the long belt-like base material due to the heat of the crucible while simplifying the configuration of the equipment disposed in the vacuum evaporation apparatus. An object of the present invention is to provide a vacuum deposition apparatus and a vacuum deposition method.

本発明の真空蒸着装置は、真空チャンバー内で、基材搬送装置により連続走行する長尺帯状基材に、ルツボ内で溶融された蒸発材料の蒸発分子を蒸着して成膜する真空蒸着装置において、基材搬送装置は、長尺帯状基材に成膜する際に、この基材面の幅方向がルツボ内の溶湯面に対し、7°以上47°以下の範囲で傾斜するように長尺帯状基材を搬送する構成とすることを特徴とする。   The vacuum deposition apparatus of the present invention is a vacuum deposition apparatus for depositing a film by evaporating evaporated molecules of an evaporation material melted in a crucible on a long strip-shaped substrate continuously running by a substrate conveying device in a vacuum chamber. The base material transport device is long so that the width direction of the base material surface is inclined in the range of 7 ° or more and 47 ° or less with respect to the molten metal surface in the crucible when the film is formed on the long belt-like base material. The belt-shaped substrate is transported.

蒸発材料としては、アルミニウム、シリコンなどの金属が挙げられる。また、蒸発材料の蒸気が蒸着される長尺帯状基材としては、ポリエチレン、ポリプロピレンなどの樹脂フィルムや、銅などの金属フィルムが挙げられる。樹脂フィルムにアルミニウム蒸着を行うことにより、食品用袋などに用いることができ、また、銅フィルムにシリコンを蒸着することにより、リチウム電池の負極に用いることができる。   Examples of the evaporation material include metals such as aluminum and silicon. In addition, examples of the long belt-like substrate on which the vapor of the evaporation material is deposited include resin films such as polyethylene and polypropylene, and metal films such as copper. By depositing aluminum on the resin film, it can be used for food bags and the like, and by depositing silicon on a copper film, it can be used for the negative electrode of a lithium battery.

ルツボは、溶湯貯留部を有する平面視で円形、四角形の容器からなり、ルツボの下方に抵抗加熱(ヒータ)、誘導加熱などの加熱装置を配置して、ルツボ内の蒸発材料を加熱したり、または、ルツボの斜め上方に電子銃を設けて、この電子銃でルツボ内の蒸発材料に電子線を照射して蒸発材料を直接加熱したりする。   The crucible consists of a circular or square container in plan view having a molten metal storage part, and a heating device such as resistance heating (heater) or induction heating is arranged below the crucible to heat the evaporation material in the crucible, Alternatively, an electron gun is provided obliquely above the crucible, and the evaporating material is directly heated by irradiating the evaporating material in the crucible with an electron beam.

ルツボには、材料供給装置を用いて溶湯貯留部に蒸発材料を供給した後、前記した加熱装置で蒸発材料を加熱し溶融して、溶湯状態にする。   The crucible is supplied with the evaporation material to the molten metal storage unit using the material supply device, and then the evaporation material is heated and melted with the heating device described above to make a molten metal state.

そして、基材搬送装置は、長尺帯状基材が巻かれた繰り出しロールと、蒸着された長尺帯状基材を巻き取る巻取りロールと、これらロールの間の下方位置に配置される冷却ロールとを有する。   And a base-material conveyance apparatus is a cooling roll arrange | positioned in the downward position between these rolls, the winding roll which winds the elongate strip-shaped base material by which the long strip-shaped base material was wound, and the vapor-deposited long strip-shaped base material And have.

さらに、本発明では、長尺帯状基材を基材搬送装置に装着することより、長尺帯状基材の成膜される面がルツボの上方に配置されるとともに、この基材面の幅方向がルツボ内の溶湯面に対し、7°以上47°以下の範囲で傾斜した状態になるようにする。そして、このように長尺帯状基材の面をルツボ内の溶湯面に対して傾斜させながら搬送して、蒸着を行う。   Furthermore, in the present invention, by attaching the long belt-like base material to the base material transport device, the surface on which the long belt-like base material is formed is disposed above the crucible, and the width direction of the base material surface Is inclined with respect to the molten metal surface in the crucible within a range of 7 ° to 47 °. And it conveys, making the surface of a elongate strip | belt-shaped base material incline with respect to the molten metal surface in a crucible in this way, and performs vapor deposition.

長尺帯状基材の面を傾斜させる具体的な構成は、基材搬送装置の繰り出しロールと、巻取りロールと、冷却ロールとを、これらの外周面がルツボ内の溶湯面に対し、7°以上47°以下の範囲で傾斜した状態となるように、真空チャンバー内に配置できるようにする。   The specific configuration for inclining the surface of the long belt-shaped base material is that the feed roll, winding roll, and cooling roll of the base material transport device have an outer peripheral surface of 7 ° with respect to the molten metal surface in the crucible. It should be arranged in the vacuum chamber so as to be inclined in the range of 47 ° or less.

そして、本発明では、冷却ロールの回転軸がルツボ内の溶湯面に対し、傾斜した状態となるので、冷却ロールに保持された長尺帯状基材も基材面の幅方向が、ルツボ内の溶湯面に対し7°以上47°以下の範囲で傾斜した状態となる。基材の傾斜角度は、20°以上34°以下とすることが最も好ましい。   And in this invention, since the rotating shaft of a cooling roll will be in the state inclined with respect to the molten metal surface in a crucible, the width direction of a base-material surface is also in the crucible in the elongate strip | belt-shaped base material hold | maintained at the cooling roll. It will be in the state which inclined in the range of 7 degrees or more and 47 degrees or less with respect to the molten metal surface. The inclination angle of the substrate is most preferably 20 ° or more and 34 ° or less.

なお、傾斜角度を7°以上47°以下の範囲としたのは、傾斜角度が7°より小さいと、従来と同様に長尺帯状基材の幅方向端部の膜圧が中央部に比べて薄く、膜の最小厚みと最大厚みのばらつきが非常に大きくなってしまうからである。また、傾斜角度が47°より大きくなると、蒸発分子が長尺帯状基材に蒸着せずに真空チャンバーの内壁などに蒸着する割合が徐々に大きくなって生産効率の低下を招いてしまうからである。   The inclination angle is in the range of 7 ° to 47 ° because when the inclination angle is smaller than 7 °, the film pressure at the end in the width direction of the long belt-like substrate is smaller than that in the central portion as in the conventional case. This is because the variation in the minimum and maximum thickness of the film is very large. In addition, when the inclination angle is larger than 47 °, the evaporation ratio of the evaporated molecules on the inner wall of the vacuum chamber without being deposited on the long belt-like base material gradually increases, leading to a decrease in production efficiency. .

本発明では、このように長尺帯状基材を基材搬送装置に取り付けて、基材搬送装置を駆動させることにより、長尺帯状基材の面をルツボ内の溶湯面に対し、前記角度で傾斜した状態で搬送しながら蒸着を行う。   In the present invention, by attaching the long belt-like base material to the base material transport device and driving the base material transport device in this way, the surface of the long belt-like base material is at the above angle with respect to the molten metal surface in the crucible. Evaporation is performed while transporting in an inclined state.

ここで、ルツボの中心を原点0とし、ルツボの溶湯面に対して長尺帯状部材X1を傾斜して配置した場合の基材への蒸着状態を図3に示す。図3は、原点0と長尺帯状基材X1の幅方向中央部aとを結ぶ直線における立体角dφ内の基板の面積(Sa2)と、原点0と基材の幅方向端部c(中央部aよりも原点0から離れた位置)とを結ぶ直線における立体角dφ内の基板の面積(Sc)と、原点0と基材の幅方向端部d(中央部aよりも原点0に近い位置)とを結ぶ直線における立体角dφ内の基板の面積(Sc)と示す。   Here, FIG. 3 shows a state of vapor deposition on the base material when the center of the crucible is set to the origin 0 and the long strip member X1 is inclined with respect to the molten metal surface of the crucible. FIG. 3 shows the area (Sa2) of the substrate within the solid angle dφ in the straight line connecting the origin 0 and the width direction central portion a of the long belt-like substrate X1, and the origin 0 and the width direction end portion c (center of the substrate). The area (Sc) of the substrate within the solid angle dφ in a straight line connecting the part a and a position away from the origin 0), and the origin 0 and the width direction end d of the base material (closer to the origin 0 than the center part a) The area (Sc) of the substrate within the solid angle dφ in the straight line connecting the (position).

そして、図3に示すように、これら面積(Sa2,Sc,Sd)は、Sd<Sa2<Scの関係となり、これらの面積(Sa2,Sc,Sd)内に蒸着する蒸発分子(フラックス)の数は等しい。   As shown in FIG. 3, these areas (Sa2, Sc, Sd) have a relationship of Sd <Sa2 <Sc, and the number of evaporated molecules (flux) deposited in these areas (Sa2, Sc, Sd). Are equal.

本発明では、以上のことから、ルツボの溶湯面(原点0)に近い側となる長尺帯状基材X1の幅方向一端側の膜厚が最も厚く、ルツボの溶湯面(原点0)から遠い側となる長尺帯状基材X1の他端側の膜厚が最も薄くなる。   In the present invention, from the above, the film thickness at one end in the width direction of the long strip-shaped substrate X1 that is closer to the molten metal surface (origin 0) of the crucible is the largest, and is far from the molten metal surface (origin 0). The film thickness on the other end side of the long belt-like substrate X1 that is the side becomes the thinnest.

従って、一旦蒸着を行った長尺帯状基材を、今度は、膜の厚みが厚く形成された幅方向一端側がルツボの溶湯面から遠い側となり、膜の厚みが薄く形成された幅方向他端側がルツボの溶湯面から近い側となるように、基材搬送装置に取り付けて蒸着を行う。   Therefore, once the vapor-deposited long belt-like substrate is used, this time, one end in the width direction where the film thickness is formed becomes the side far from the molten metal surface of the crucible, and the other end in the width direction where the film thickness is formed thin. Vapor deposition is performed by attaching to the substrate conveying apparatus so that the side is closer to the molten metal surface of the crucible.

この二回目の蒸着によって、先ほどと同じように、幅方向他端側に形成された膜の厚みが厚く、一端側に形成された膜の厚みが薄く膜が形成されるので、全体として、幅方向に均一な膜を形成することができる。   By the second deposition, the film formed on the other end in the width direction is thick and the film formed on the one end is thin as before. A film uniform in the direction can be formed.

このような、長尺帯状基材X1の同じ成膜面を2度蒸着する場合は、一つのルツボの上を2回走行させるようにしてもよし、2つのルツボの上を連続して1回走行するようにしてもよい。長尺帯状基材を1回走行により2度の蒸着を行う場合には、基材搬送装置の冷却ロールの回転軸の傾きを前後で逆にする。   When the same film-forming surface of the long belt-like substrate X1 is deposited twice, it may be run twice on one crucible or once on two crucibles in succession. You may make it drive | work. When vapor deposition is performed twice by running the long belt-shaped substrate once, the inclination of the rotation axis of the cooling roll of the substrate transport device is reversed in the front and rear directions.

さらに、本発明では、ルツボにおける溶湯貯留部の開口部における長尺帯状基材の幅方向に対応した長さが、長尺帯状基材のルツボ溶湯面に投影した幅よりも小さくすることが好ましい。   Furthermore, in the present invention, it is preferable that the length corresponding to the width direction of the long strip-shaped substrate at the opening of the molten metal storage portion in the crucible is smaller than the width projected on the crucible melt surface of the long strip-shaped substrate. .

このように、ルツボの大きさを設定することにより、ルツボで発生する輻射熱をできるだけ小さくできるので、長尺帯状基材の熱による破損をできるだけ防止することができる。   Thus, by setting the size of the crucible, the radiant heat generated in the crucible can be made as small as possible, so that the long belt-like base material can be prevented from being damaged by heat as much as possible.

また、本発明では、ルツボの大きさを前記した大きさとする場合には、基材とルツボとの距離が短くなるように、長尺帯状基材の幅方向中央部と、溶湯表面との距離が80mm以上300mm未満となるようにすることが好ましい。   Further, in the present invention, when the size of the crucible is set to the above-described size, the distance between the center in the width direction of the long belt-like base material and the molten metal surface so that the distance between the base material and the crucible becomes short. Is preferably 80 mm or more and less than 300 mm.

本発明の真空蒸着装置は、成膜を行う際に、長尺帯状基材を、成膜面の幅方向をルツボ内の溶湯面に対して所定の角度に傾斜させて搬送しながら蒸着を行うようになっている。   The vacuum vapor deposition apparatus of the present invention performs vapor deposition while transporting a long band-shaped substrate with the width direction of the film formation surface inclined at a predetermined angle with respect to the molten metal surface in the crucible when performing film formation. It is like that.

そして、このように長尺帯状基材を傾斜させながら蒸着を行う蒸着方法を、基材の幅方向一端側と他端側とがそれぞれルツボに近い側となるように2回行うことにより、図4のグラフの三角点のプロット線で示すように、膜厚分布曲線が直線に近づく。その結果、基材に形成される膜は、平坦な膜厚分布が得られ、基材の幅方向の膜厚が均一化される。   Then, by performing the vapor deposition method for performing vapor deposition while inclining the long belt-like base material in this manner so that one end side and the other end side in the width direction of the base material are close to the crucible, respectively, As shown by the plot line of the triangular point in the graph of 4, the film thickness distribution curve approaches a straight line. As a result, the film formed on the substrate has a flat film thickness distribution, and the film thickness in the width direction of the substrate is made uniform.

即ち、本発明では、ルツボの溶湯面に対して、長尺帯状基材を傾斜させながら蒸着を行うので、1回の蒸着による基材幅方向の膜厚分布が、図4の示す従来の双曲線ではなく、直線に近づいた線になる。   That is, in the present invention, the deposition is performed while the long belt-shaped substrate is inclined with respect to the molten metal surface of the crucible, so that the film thickness distribution in the substrate width direction by one deposition is the conventional hyperbola shown in FIG. Instead, it becomes a line close to a straight line.

ところで、図4のグラフに示す従来の蒸着方法では、基材の幅方向両端部に形成される膜の厚みが薄くなるため、できるだけ均一な膜を形成しようとすると、基材とルツボとの距離を大きくして蒸発分子を拡散させる必要があった。   By the way, in the conventional vapor deposition method shown in the graph of FIG. 4, since the thickness of the film formed at both ends in the width direction of the base material is reduced, the distance between the base material and the crucible is to be formed as much as possible. It was necessary to increase the value to diffuse the evaporated molecules.

しかし、本発明の真空蒸着装置を用いて成膜を行うと、一回の蒸着により、基材の幅方向一端側から他端側に向けて膜厚が徐々に減少または増加していくため、基材を反転して2回蒸着を行うと、膜厚分布が、基材面に対して平行な直線に近づく。そのため、膜厚の設定を基材の幅方向中央部に形成される膜厚を基準にして基材全体の膜厚を設定することが可能となる。その結果、本発明では、従来に比べて基材をルツボに近づけることができ、しかも、成膜速度は距離の2乗に比例するので、高速で成膜することができるようになる。   However, when film formation is performed using the vacuum vapor deposition apparatus of the present invention, the film thickness gradually decreases or increases from one end side to the other end side in the width direction of the substrate by one vapor deposition, When the substrate is inverted and vapor deposition is performed twice, the film thickness distribution approaches a straight line parallel to the substrate surface. Therefore, it becomes possible to set the film thickness of the entire base material with reference to the film thickness formed at the center in the width direction of the base material. As a result, in the present invention, the substrate can be brought closer to the crucible than in the prior art, and the film formation speed is proportional to the square of the distance, so that the film can be formed at a high speed.

特に、ルツボにおける溶湯貯留部の開口部における長尺帯状基材の幅方向に対応した長さが、長尺帯状基材のルツボ溶湯面に投影した幅よりも小さくすると、基材が溶湯の輻射熱で加熱される度合いを小さくできるので、基材の熱による破損が起こらない程度まで、できるだけ基材をルツボに近づけることができる。   In particular, if the length corresponding to the width direction of the long belt-like base material at the opening of the molten metal reservoir in the crucible is smaller than the width projected on the crucible molten metal surface of the long belt-like base material, the base material radiates heat of the melt. Since the degree of heating can be reduced, the substrate can be brought as close to the crucible as possible to the extent that the substrate is not damaged by heat.

さらに、本発明では、ルツボの大きさを長尺帯状基材のルツボ溶湯面に投影した幅よりも小さくすることにより、長尺帯状基材の幅方向中央部と、溶湯表面との距離が80mm以上300mm未満にすることができ、蒸着速度を従来よりも上げられる。   Furthermore, in the present invention, by making the size of the crucible smaller than the width projected on the molten metal surface of the long belt-shaped substrate, the distance between the center in the width direction of the long belt-shaped substrate and the surface of the molten metal is 80 mm. More than 300 mm can be achieved, and the deposition rate can be increased as compared with the conventional method.

その結果、同じ基材に対して2度の蒸着を行っても、成膜時間を半減することができるので、生産性の低下は起こらない。   As a result, even if vapor deposition is performed twice on the same substrate, the film formation time can be halved, so that the productivity does not decrease.

以下本発明の真空蒸着装置の実施形態について図面に基づいて説明する。本実施形態の真空蒸着装置1は、図1および図2に示すように、真空チャンバー2内に、ルツボ3と、基材搬送装置4とを有する。   Embodiments of a vacuum deposition apparatus according to the present invention will be described below with reference to the drawings. The vacuum vapor deposition apparatus 1 of this embodiment has the crucible 3 and the base material conveyance apparatus 4 in the vacuum chamber 2, as shown in FIG. 1 and FIG.

真空蒸着装置1は、真空チャンバー2は、図示していなが、頭部と底部にそれぞれ排気口が設けられており、この排気口から排気されて内部が減圧されるようになっている。   In the vacuum evaporation apparatus 1, although the vacuum chamber 2 is not shown in the drawing, exhaust ports are provided at the head and the bottom, respectively, and the inside is exhausted from the exhaust port so that the inside is decompressed.

真空チャンバー2内は、下部にルツボ3が配置され、上部に基材搬送装置4が配置されている。   In the vacuum chamber 2, a crucible 3 is arranged at the lower part, and a substrate conveying device 4 is arranged at the upper part.

ルツボ3は、蒸発材料を貯留する溶湯貯留部31を有しており、この溶湯貯留部31の開口部は円形をしており、外形も円形をしている。溶湯貯留部31の開口部の大きさは、例えば、長尺帯状基材5の幅方向長さが300mmの場合、80mmの直径を有していれば、十分に膜の厚みが均一な蒸着を行うことができる。また、ルツボは、長方形状の開口部を有した溶湯貯留部31を備えるようにしてもよい。この場合、溶湯貯留部31の長辺部が、長尺帯状基材5の幅方向に対応するように配置され、長辺部の長さも、長尺帯状基材5の幅方向長さに比べて短くなるように形成する。   The crucible 3 has a molten metal storage part 31 for storing the evaporated material, and the opening of the molten metal storage part 31 has a circular shape, and the outer shape is also circular. As for the size of the opening of the molten metal storage part 31, for example, if the length in the width direction of the long belt-like substrate 5 is 300 mm, if the diameter is 80 mm, vapor deposition with a sufficiently uniform film thickness can be performed. It can be carried out. Moreover, the crucible may be provided with a molten metal storage part 31 having a rectangular opening. In this case, the long side portion of the molten metal storage portion 31 is arranged so as to correspond to the width direction of the long strip-shaped substrate 5, and the length of the long side portion is also longer than the width direction length of the long strip-shaped substrate 5. To shorten the length.

具体的には、前記溶湯貯留部31の開口部における長尺帯状基材5の幅方向に対応した長さが、長尺帯状基材5のルツボ溶湯面に投影した幅よりも小さくなるように形成する。   Specifically, the length corresponding to the width direction of the elongated strip-shaped substrate 5 at the opening of the molten metal storage portion 31 is smaller than the width projected on the crucible molten metal surface of the elongated strip-shaped substrate 5. Form.

そして、図1には示していないが、真空蒸着装置1は、蒸発材料供給装置によりルツボ3内に蒸発材料を供給し、真空チャンバー2の側部に設ける電子銃でルツボ3内の蒸発材料を溶融する。ルツボ3内には、シリコンやアルミなどの蒸発材料が充填される。   Although not shown in FIG. 1, the vacuum evaporation apparatus 1 supplies the evaporation material into the crucible 3 by the evaporation material supply apparatus, and the evaporation material in the crucible 3 is provided by an electron gun provided on the side of the vacuum chamber 2. Melt. The crucible 3 is filled with an evaporation material such as silicon or aluminum.

蒸発材料供給装置は、例えば、真空チャンバー2の外側に設けるホッパー部と、このホッパー部の下部に接続され、下端がルツボ3内に開口する供給管とを有するものが挙げられる。   Examples of the evaporation material supply device include a hopper portion provided outside the vacuum chamber 2 and a supply pipe connected to a lower portion of the hopper portion and having a lower end opened into the crucible 3.

さらに、真空チャンバー2の側壁部に設ける電子銃は、当該電子銃から放出される電子線がルツボ3内の蒸発材料に照射されるような位置に配設される。そして、この電子銃によって加熱されて溶融した蒸発材料が蒸発し、蒸発分子が基材搬送装置4の冷却ロール43の周面を走行する長尺帯状基材5上に蒸着されて膜が形成されるようになっている。   Further, the electron gun provided on the side wall portion of the vacuum chamber 2 is disposed at a position where an electron beam emitted from the electron gun is irradiated on the evaporation material in the crucible 3. Then, the evaporated material heated and melted by this electron gun evaporates, and the evaporated molecules are deposited on the long belt-like substrate 5 running on the peripheral surface of the cooling roll 43 of the substrate transport device 4 to form a film. It has become so.

基材搬送装置4は、繰り出しロール41と巻取りロール42と、これらロールの間の下方位置に配置される冷却ロール43とを有する。   The substrate transport apparatus 4 includes a feeding roll 41, a winding roll 42, and a cooling roll 43 that is disposed at a lower position between these rolls.

繰り出しロール41と巻取りロール42とは定速で回転させ、冷却ロール43はフリー回転するようになっている。冷却ロール43は、内部に図示しない冷却装置が設けられ、長尺帯状基材5の温度上昇による変形等を抑制するようになっている。冷却ロール43は、ルツボ3の溶湯貯留部31に対向させて配置している。繰り出しロール41と巻取りロール42の回転駆動は、コンピュータなどの制御手段で巻取りロール42の駆動軸に連結されるモータを駆動制御して行うようになっている。このモータを回転させることにより、巻取りロール42が回転して、長尺帯状基材5が連続走行するようになっている。   The feeding roll 41 and the take-up roll 42 are rotated at a constant speed, and the cooling roll 43 is rotated freely. The cooling roll 43 is provided with a cooling device (not shown) inside so as to suppress deformation or the like due to a temperature rise of the long belt-like substrate 5. The cooling roll 43 is disposed to face the molten metal storage portion 31 of the crucible 3. The rotation of the feed roll 41 and the take-up roll 42 is performed by driving and controlling a motor connected to the drive shaft of the take-up roll 42 by a control means such as a computer. By rotating this motor, the take-up roll 42 rotates so that the long belt-like substrate 5 runs continuously.

繰り出しロール41、巻取りロール42、そして、冷却ロール43は長尺帯状基材5の幅より長いロール面を有する円柱状をしており、巻取りロール42の駆動軸をモータを介して、また、繰り出しロール41と冷却ロール43の回転軸を軸受けを介して真空チャンバー2内に支持している。   The feed roll 41, the take-up roll 42, and the cooling roll 43 have a cylindrical shape having a roll surface longer than the width of the long belt-like substrate 5, and the drive shaft of the take-up roll 42 is connected via a motor. The rotating shafts of the feed roll 41 and the cooling roll 43 are supported in the vacuum chamber 2 via bearings.

そして、繰り出しロール41にテープ状の長尺帯状基材5を巻いておく。長尺帯状基材5は、繰り出しロール41から引き出されて、冷却ロール43で図中下方に押し出すように支持されながら、巻取りロール42に巻き取られる構造になっている。   Then, the tape-like long belt-like substrate 5 is wound around the feeding roll 41. The long belt-like base material 5 has a structure in which it is wound around the winding roll 42 while being pulled out from the feeding roll 41 and supported by the cooling roll 43 so as to be pushed downward in the figure.

さらに、基材搬送装置4は、繰り出しロール41と、巻取りロール42と、冷却ロール43とを、これら駆動軸および回転軸がルツボ内の溶湯面に対し、7°以上47°以下の範囲で傾斜した状態、本実施形態では最も好ましい傾斜角度である27°になるように、真空チャンバー2内に配置する。   Further, the substrate transport device 4 includes a feeding roll 41, a winding roll 42, and a cooling roll 43, with a drive shaft and a rotation shaft in a range of 7 ° to 47 ° with respect to the molten metal surface in the crucible. It is arranged in the vacuum chamber 2 so as to be in an inclined state, ie, 27 ° which is the most preferable inclination angle in this embodiment.

そして、各ロールの軸がルツボ3内の溶湯面に対し、27°傾斜した状態となるので、冷却ロール43の外周面に保持された長尺帯状基材5の幅方向も、ルツボ3内の溶湯面に対し傾斜した状態となる。   Then, since the axis of each roll is inclined by 27 ° with respect to the molten metal surface in the crucible 3, the width direction of the long belt-like substrate 5 held on the outer peripheral surface of the cooling roll 43 is also within the crucible 3. It will be in the state inclined with respect to the molten metal surface.

本実施形態では、このように長尺帯状基材5を基材搬送装置4に取り付けて、基材搬送装置4を駆動させることにより、長尺帯状基材5の面をルツボ3内の溶湯面に対し、前記角度で傾斜した状態で搬送しながら蒸着を行う。   In the present embodiment, the long belt-like base material 5 is attached to the base material transport device 4 in this way, and the base material transport device 4 is driven so that the surface of the long belt-like base material 5 is the molten metal surface in the crucible 3. On the other hand, vapor deposition is performed while transporting in a state inclined at the angle.

さらに、前記したように、ルツボ3の溶湯貯留部31の開口部の直径を、長尺帯状基材5のルツボ溶湯面に投影した幅よりも小さくするとともに、長尺帯状基材5の幅方向中央部と、溶湯表面との距離が300mm未満となるように配置している。例えば、長尺帯状基材5の幅が300mmでルツボ3の溶湯貯留部31の開口部の直径が80mmの場合には、長尺帯状基材5と溶湯表面との距離が200mmとなるようにルツボ3と冷却ロール43とを配置する。   Further, as described above, the diameter of the opening of the molten metal storage portion 31 of the crucible 3 is made smaller than the width projected on the crucible molten metal surface of the long strip-shaped substrate 5, and the width direction of the long strip-shaped substrate 5 It arrange | positions so that the distance of a center part and the molten metal surface may be less than 300 mm. For example, when the width of the long belt-like substrate 5 is 300 mm and the diameter of the opening of the molten metal storage portion 31 of the crucible 3 is 80 mm, the distance between the long belt-like substrate 5 and the molten metal surface is 200 mm. The crucible 3 and the cooling roll 43 are arranged.

このように、ルツボ3の大きさを設定することにより、ルツボで発生する輻射熱をできるだけ小さくできるので、長尺帯状基材の熱による破損をできるだけ防止することができる。さらに、基材とルツボとの距離が200mmと短いので、蒸着速度を従来よりも上げられる。その結果、同じ基材に対して2度の蒸着を行っても、1回の成膜時間を半減することができるので、生産性の低下は起こらない。   Thus, by setting the size of the crucible 3, the radiant heat generated in the crucible can be made as small as possible, so that the long belt-like substrate can be prevented from being damaged by heat as much as possible. Furthermore, since the distance between the substrate and the crucible is as short as 200 mm, the deposition rate can be increased as compared with the conventional method. As a result, even if the vapor deposition is performed twice on the same base material, the time for one film formation can be halved, so that the productivity does not decrease.

長尺帯状基材5としては、樹脂フィルムや金属フィルムなどを用いるが、本実施形態では、銅フィルムを用いる。   As the long belt-like substrate 5, a resin film, a metal film, or the like is used, but in this embodiment, a copper film is used.

以上のような構成を有する真空蒸着装置1を用いて、長尺帯状基材5に成膜する運転について説明する。   An operation of forming a film on the long belt-like substrate 5 using the vacuum vapor deposition apparatus 1 having the above configuration will be described.

まず、真空チャンバー2内に、長尺帯状基材5が巻かれた繰り出しロール41をセットし、長尺帯状基材5を冷却ロール43に沿わした後、巻取りロール42に端部を固定する。   First, the feeding roll 41 around which the long belt-like substrate 5 is wound is set in the vacuum chamber 2, the long belt-like substrate 5 is set along the cooling roll 43, and then the end is fixed to the winding roll 42. .

長尺帯状基材5は、ルツボ3の上面に対して長尺帯状基材5の面の幅方向一端側がルツボ3に近くなるように傾斜された状態となる。   The long belt-like substrate 5 is inclined with respect to the upper surface of the crucible 3 so that one end in the width direction of the surface of the long belt-like substrate 5 is close to the crucible 3.

次に、真空チャンバー2内の排気を行って所定の真空度を保つようにする。その後、蒸発材料供給装置から所定の蒸発材料をルツボ3の溶湯貯留部31内に供給する。   Next, the vacuum chamber 2 is evacuated to maintain a predetermined degree of vacuum. Thereafter, a predetermined evaporation material is supplied from the evaporation material supply device into the molten metal storage part 31 of the crucible 3.

そして、ルツボ3内の蒸発材料を電子銃で加熱して溶融する。ルツボ3内の蒸発材料が溶融したら、基材搬送装置4を駆動させて、長尺帯状基材5を搬送しながら、この長尺帯状基材5へ蒸着を行う。   Then, the evaporation material in the crucible 3 is heated and melted with an electron gun. When the evaporating material in the crucible 3 is melted, the base material transport device 4 is driven to carry out vapor deposition on the long strip base material 5 while transporting the long strip base material 5.

長尺帯状基材5への1回の走行により蒸着がなされた後、次に、この蒸着された長尺帯状基材5について、今度は、長尺帯状基材5の面の前記幅方向他端側がルツボ3に近くなるように前回と同じ角度で傾斜させて、この長尺帯状基材5を搬送しながら蒸着を行う。   After vapor deposition is performed by one run on the long belt-like base material 5, next, with respect to the vapor-deposited long belt-like base material 5, this time, the width direction of the surface of the long belt-like base material 5 and the like. Vapor deposition is carried out while transporting the long belt-like substrate 5 by inclining at the same angle as the previous time so that the end side is close to the crucible 3.

長尺帯状基材5に形成される膜の膜厚の設定は、一回の走行で長尺帯状基材5の幅方向中央部に形成される膜厚を基準にして基材全体の膜厚を設定する。   The film thickness of the film formed on the long belt-like substrate 5 is set based on the film thickness formed at the center in the width direction of the long belt-like substrate 5 in one run. Set.

本実施形態では、長尺帯状基材5を反転して2回蒸着を行うので、長尺帯状基材5に形成される膜の膜厚分布が、基材面に対して平行な直線に近づく。その結果、従来に比べて長尺帯状基材5をルツボ3に近づけることができ、しかも、成膜速度は距離の2乗に比例するので、高速で成膜することができる。   In this embodiment, since the long strip-shaped substrate 5 is inverted and vapor deposition is performed twice, the film thickness distribution of the film formed on the long strip-shaped substrate 5 approaches a straight line parallel to the substrate surface. . As a result, the elongated belt-like substrate 5 can be brought closer to the crucible 3 than in the prior art, and the film formation speed is proportional to the square of the distance, so that the film can be formed at a high speed.

なお、長尺帯状基材5の傾斜角度を、5°、7°、20°、27°、30°、47°、50°として、成膜状態を調べたところ、7°では、従来の膜厚分布についての最小厚みと最大厚みとのばらつきの半分以下の厚みのばらつきが得られ、20°、27°、30°、47°については、略均一な膜厚が得られた。また、傾斜角度が5°の場合は、従来とほぼ変わらない膜厚分布となった。傾斜角度が50°の場合は、膜厚分布は、ほぼ均一に近い状態となったが、蒸発分子の拡散により真空チャンバーの壁面に蒸着する割合が大きくなってしまった。   In addition, the inclination angle of the long belt-like substrate 5 was 5 °, 7 °, 20 °, 27 °, 30 °, 47 °, 50 °, and the film formation state was examined. A thickness variation of less than half of the variation between the minimum thickness and the maximum thickness with respect to the thickness distribution was obtained, and a substantially uniform film thickness was obtained for 20 °, 27 °, 30 °, and 47 °. In addition, when the tilt angle was 5 °, the film thickness distribution was almost the same as the conventional film thickness distribution. When the tilt angle was 50 °, the film thickness distribution was almost uniform, but the rate of deposition on the wall surface of the vacuum chamber increased due to the diffusion of the evaporated molecules.

特に、ルツボ3における溶湯貯留部31の開口部の大きさが、長尺帯状基材5のルツボ溶湯面に投影した幅よりも小さいので、長尺帯状基材5が溶湯の輻射熱で加熱される度合いを少なくでき、長尺帯状基材5の熱による破損が起こらない程度まで、できるだけ基材をルツボに近づけることができる。その結果、同じ基材に対して2度の蒸着を行っても、成膜時間を半減することができるので、生産性の低下は起こらない。   In particular, since the size of the opening of the molten metal storage portion 31 in the crucible 3 is smaller than the width projected on the crucible molten metal surface of the long strip-shaped substrate 5, the long strip-shaped substrate 5 is heated by the radiant heat of the molten metal. The base material can be brought as close to the crucible as possible to the extent that the degree can be reduced and the long belt-like base material 5 is not damaged by heat. As a result, even if vapor deposition is performed twice on the same substrate, the film formation time can be halved, so that the productivity does not decrease.

以上のように、本実施形態によれば、ルツボを小さく、かつ、簡単な構成にできながら、しかも、基材搬送装置も複雑な構成とせずとも、長尺帯状基材5に均一な厚みの膜を形成できる。   As described above, according to the present embodiment, the crucible can be reduced in size and simple, and the base material transport device has a uniform thickness even if the base material transport device is not complicated. A film can be formed.

本発明の真空蒸着装置は、帯状の長い基材を搬送しながら、この基材に均一な膜を形成する場合に好適である。   The vacuum vapor deposition apparatus of the present invention is suitable for forming a uniform film on a base material while conveying a long belt-like base material.

本発明の長尺帯状基材に成膜する真空蒸着装置の概略全体構成図あって、基材搬送装置のロール面側から見た図である。BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic whole block diagram of the vacuum evaporation system which forms into a film on the elongate strip-shaped base material of this invention, Comprising: It is the figure seen from the roll surface side of the base material conveying apparatus. 図1の真空蒸着装置を基材搬送装置のロール軸方向から見た図である。It is the figure which looked at the vacuum evaporation apparatus of FIG. 1 from the roll-axis direction of the base material conveying apparatus. 本発明の真空蒸着装置を用いて長尺帯状基材に成膜した場合と、従来の長尺帯状基材をルツボ溶湯面に水平に配置して成膜した場合との成膜状態を比較した図である。The film formation state was compared between the case where the film was formed on the long belt-shaped substrate using the vacuum vapor deposition apparatus of the present invention and the case where the film was formed by arranging the conventional long belt-shaped substrate horizontally on the crucible molten metal surface. FIG. 本発明と従来との長尺帯状基材に成膜される膜厚分布の違いを示す説明図である。It is explanatory drawing which shows the difference in the film thickness distribution formed into a film in the elongate strip | belt-shaped base material of this invention and the former.

符号の説明Explanation of symbols

1 真空蒸着装置
2 真空チャンバー
3 ルツボ 31 溶湯貯留部
4 基材搬送装置
41 繰り出しロール 42 巻取りロール 43 冷却ロール
5 長尺帯状基材
1 Vacuum deposition equipment
2 Vacuum chamber
3 Crucible 31 Molten reservoir
4 Substrate transport device
41 Feeding roll 42 Winding roll 43 Cooling roll
5 Long strip base material

Claims (4)

真空チャンバー内で、基材搬送装置により連続走行する長尺帯状基材に、ルツボ内で溶融された蒸発材料の蒸発分子を蒸着して成膜する真空蒸着装置において、
基材搬送装置は、長尺帯状基材に成膜する際に、この基材面の幅方向がルツボ内の溶湯面に対し、7°以上47°以下の範囲で傾斜するように長尺帯状基材を搬送する構成としていることを特徴とする真空蒸着装置。
In a vacuum deposition apparatus for depositing a film by evaporating evaporation molecules of evaporation material melted in a crucible on a long belt-like substrate continuously running by a substrate conveying device in a vacuum chamber,
When forming a film on a long strip base material, the base material transport device is in the form of a long strip so that the width direction of the base surface is inclined in the range of 7 ° to 47 ° with respect to the molten metal surface in the crucible. A vacuum deposition apparatus characterized in that the substrate is transported.
ルツボの開口部における長尺帯状基材の幅方向に対応した長さが、長尺帯状基材のルツボ溶湯面に投影した幅よりも小さいことを特徴とする請求項1に記載の真空蒸着装置。   The vacuum deposition apparatus according to claim 1, wherein a length corresponding to a width direction of the long belt-like base material in the opening of the crucible is smaller than a width projected on the crucible molten metal surface of the long belt-like base material. . 長尺帯状基材の幅方向中央部と、溶湯表面との距離が80mm以上300mm未満であることを特徴とする請求項2に記載の真空蒸着装置。   The vacuum deposition apparatus according to claim 2, wherein the distance between the central portion in the width direction of the long belt-like substrate and the surface of the molten metal is 80 mm or more and less than 300 mm. 真空チャンバー内に、長尺帯状基材を連続走行させる基材搬送装置と、溶融された蒸発材料が収容されるルツボとを備える真空蒸着装置を用いて、長尺帯状基材に蒸発材料の蒸発分子を蒸着して成膜する真空蒸着方法において、
長尺帯状基材を、この基材の幅方向一端側がルツボに近くなるように、この基材面の幅方向がルツボ内の溶湯面に対し、7°以上47°以下の範囲で傾斜させた状態で搬送しながら蒸着した後、この蒸着済みの基材を、基材の幅方向他端側がルツボに近くなるように、この基材面の幅方向がルツボ内の溶湯面に対し、前記と同じ角度で傾斜させた状態で搬送しながら蒸着することを特徴とする真空蒸着方法。
Evaporation of the evaporation material on the long band-shaped substrate using a vacuum deposition apparatus comprising a substrate transport device for continuously running the long band-shaped substrate in the vacuum chamber and a crucible for storing the molten evaporation material. In the vacuum deposition method of depositing molecules to form a film,
The long belt-like base material was inclined in the range of 7 ° or more and 47 ° or less with respect to the molten metal surface in the crucible so that one end in the width direction of the base material is close to the crucible. After vapor deposition while being conveyed in the state, the substrate in which the width of the substrate surface is in the width direction with respect to the molten metal surface in the crucible so that the other end in the width direction of the substrate is close to the crucible. A vacuum vapor deposition method, characterized in that vapor deposition is carried out while being transported while being inclined at the same angle.
JP2005261103A 2005-09-08 2005-09-08 Vacuum deposition method Expired - Fee Related JP4721107B2 (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57201625A (en) * 1981-06-08 1982-12-10 Sekisui Chem Co Ltd Manufacture of molded article
JP2000303172A (en) * 1999-04-16 2000-10-31 Shin Etsu Chem Co Ltd Formation of sputtering film

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57201625A (en) * 1981-06-08 1982-12-10 Sekisui Chem Co Ltd Manufacture of molded article
JP2000303172A (en) * 1999-04-16 2000-10-31 Shin Etsu Chem Co Ltd Formation of sputtering film

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