JP2007053276A - Method and device for manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method and a device for manufacturing a semiconductor device excellent in an embedding property and an electric characteristic with using an insulating film having a small dielectric constant. <P>SOLUTION: The method for manufacturing the semiconductor device comprises the steps of generating a gas plasma 14 by introducing an oxygen gas and a chlorine gas 18 into a chamber 1 with vacuum exhausted, and by supplying an electric power to a plasma antenna 27; then generating a precursor 15 by etching a silicon member 20 to be etched with a chlorine gas radical; adsorbing the precursor 15 to a substrate 3 with an adjustment of a temperature control means 6; then reducing the precursor 15 adsorbed to the substrate with the chlorine gas radical, oxidizing with the oxygen gas radical to produce an SiO<SB>2</SB>film, and embedding the SiO<SB>2</SB>film in the groove having a large aspect ratio. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a method and apparatus for manufacturing a semiconductor device having an insulating film.

  1 to 14 show a process flow of a conventional semiconductor device.

(Step 1)
A 100 ＳｉＯ SiO ₂ film 102 is grown on the main surface of the p-type (001) silicon substrate 101 using a thermal oxidation method, and then a 500 Ｓｉ Si ₃ N ₄ film 103 is formed using a CVD (Chemical Vapor Deposition) method. And accumulate. Then, a resist 104 is patterned in a desired region using photolithography (see FIG. 1).

(Step 2)
Using the resist 104 as a mask, the Si ₃ N ₄ film 103 and the SiO ₂ film 102 are dry-etched. Further, after removing the resist 104, the surface of the silicon substrate 101 is etched to form a groove 105 having a depth of 3000 mm. Then, a thermal oxidation method to form a SiO ₂ film 106 of 100Å on the inner wall of the groove 105 (see FIG. 2).

(Step 3)
Depositing a SiO ₂ film of 5000Å in a high-density plasma CVD method to fill the groove 105. The SiO ₂ film shape during deposition at this time is as indicated by 107a, and the SiO ₂ film is formed on the side surface of the groove 105 (see FIG. 3). Then, after 5000Å deposited SiO ₂ film, a film-shaped cross-section, such as a SiO ₂ film 107b in FIG.

(Step 4)
By CMP (Chemical-Mechanical Polishing) method, and polishing the surface of the SiO ₂ film 107b, by etching the SiO ₂ film 107b by a predetermined amount using an HF solution, to expose the surface of the Si ₃ N ₄ film 103. At this time, the trench 105 is filled with the SiO ₂ film 107c (see FIG. 5).

(Step 5)
The Si ₃ N ₄ film 103 is removed using hot phosphoric acid to form an STI (Shallow Trench Isolation) 105a (see FIG. 6).

(Step 6)
1 × 10 ¹³ boron is implanted ions cm ^-2 at an energy of 20KeV to areas of the transistors, p ^- to form the injecting layer 108. After the SiO ₂ film 102 is removed with an HF solution, a 20-inch SiO ₂ film 109 is grown on the main surface of the silicon substrate 101 using a thermal oxidation method. Next, a polycrystalline silicon 110 having a thickness of 1500 mm is grown by low pressure CVD, and then a resist 111 is formed into a desired pattern by photolithography (see FIG. 7).

(Step 7)
The polycrystalline silicon 110 is etched using the resist 111 as a mask. The resist 111 is removed, and 5 × 10 ¹³ cm ⁻² arsenic ions are implanted with an energy of 20 KeV to form an n ⁻ implanted layer 112 of the transistor (see FIG. 8).

(Step 8)
An 80 ＳｉＯ SiO ₂ film 113 is deposited by low pressure CVD, and then a 500 Ｓｉ Si ₃ N ₄ film 114 is deposited by low pressure CVD. The Si ₃ N ₄ film 114 is etched back by reactive ion etching. At that time, the SiO ₂ film 113 is also etched to form 115 as a sidewall. An arsenic ion of 4 × 10 ¹⁵ cm ⁻² is implanted with an energy of 40 KeV to form an n ⁺ implanted layer 116 of the transistor and an n ⁺ implanted polycrystalline silicon 110a. When heat treatment is performed at a temperature of 1000 ° C. using a lamp annealing apparatus, arsenic ions in the n ⁻ implanted layer 112, the n ⁺ implanted layer 116, and the n ⁺ implanted polycrystalline silicon 110a are activated, and the n ⁻ regions 112a, n ⁺ diffusion layer 116a, n ⁺ gate electrode 110b are formed (see FIG. 9).

(Step 9)
When a Ni film is formed using a sputtering method and heat treatment is performed at a temperature of 500 ° C. using a lamp annealing apparatus, the n ⁺ gate electrode 110a made of silicon and polysilicon on the surface of the silicon substrate reacts with Ni, and NiSi Is formed. Thereafter, unreacted Ni is removed using a mixed solution of hydrochloric acid and hydrogen peroxide solution. Through the above steps, the transistor 118 including NiSi 117 is formed (see FIG. 10).

(Step 10)
An SiO ₂ film is deposited by a high density plasma CVD method, and an interlayer oxide film layer 119 is formed by planarizing the surface by a CMP method (see FIG. 11).

(Step 11)
Thereafter, a contact hole 120 is formed by photolithography and etching, and a Ti thin film, a TiN thin film, and tungsten are deposited by sputtering or CVD, and tungsten 121 is left only in the contact hole using CMP. An AlCu film is deposited by sputtering and processed into a desired pattern by photolithography and etching to form an AlCu wiring 122 (see FIG. 12).

(Step 12)
An SiO ₂ film is deposited by a high-density plasma CVD method, a gap between the AlCu wirings 122 is filled, and an interlayer oxide film layer 123 is formed by planarizing the surface using a CMP method (see FIG. 13).

(Step 13)
A via hole is provided by photolithography and etching, an AlCu film is deposited by sputtering, and processed into a desired pattern by photolithography and etching to form an AlCu wiring 124 (see FIG. 14). Through the above steps, a semiconductor device is formed.

JP 2000-306992 A

  The conventional semiconductor device has an AlCu wiring as shown in FIG. 13 in addition to the STI filling as shown in FIGS. 3 and 4 and between the gate electrodes as shown in FIG. For example, an insulating film formed by a high-density plasma CVD method has been used to fill the gap. However, as the miniaturization of semiconductor devices progresses in recent years, the dimensions of STI, between gate electrodes, and between AlCu wirings become minute, and it is difficult to embed an insulating film with conventional techniques including high-density plasma CVD. It has become.

In the step of embedding between the gate electrodes shown in FIG. 11, for example, a boron phosphorous glass of 5000 mm is deposited by using the CVD method, and heat treatment is performed at 850 ° C. for 30 minutes in a nitrogen atmosphere. By reflowing the glass, embedding between the gate electrodes can be achieved. However, in this case, the n ⁻ region 112a and the n ⁺ diffusion layer 116a of the transistor 118 are expanded by heat treatment at 850 ° C. for 30 minutes. The transistor 118 causes punch through and the desired performance cannot be obtained.

  Further, the STI insulating film is necessary to prevent electrical interference between the diffusion layers of the transistor, and the insulating film between the gate electrodes is necessary to prevent electrical interference between the gate electrodes of the transistor. Yes, an insulating film between AlCu wirings is necessary to prevent electrical interference between AlCu wirings. However, as each dimension of STI, gate electrodes, and AlCu wirings becomes smaller, electrical interference is prevented. Therefore, it has become necessary to reduce the dielectric constant of each insulating film.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a method and an apparatus for manufacturing a semiconductor device having an excellent electrical property by using an insulating film having an excellent embedding property and a low dielectric constant.

A method for manufacturing a semiconductor device according to a first invention for solving the above-described problems is as follows.
Supplying halogen gas and oxygen gas into the chamber in which the substrate is accommodated;
The halogen gas and oxygen gas are turned into plasma to generate halogen gas plasma and oxygen gas plasma,
Etching a member to be etched made of silicon with the halogen gas plasma to generate a precursor of the silicon and halogen,
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a silicon oxide film is formed on the substrate, and a groove between wirings formed on the substrate is embedded with the silicon oxide film.

A method for manufacturing a semiconductor device according to a second invention for solving the above-described problems is as follows.
Halogen gas is supplied into the chamber in which the substrate is accommodated, and the halogen gas is turned into plasma to generate halogen gas plasma.
Etching a member to be etched made of silicon with the halogen gas plasma to generate a precursor of the silicon and halogen,
Generating oxygen gas plasma by converting oxygen gas into plasma outside the chamber, and supplying the oxygen gas plasma to the substrate;
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a silicon oxide film is formed on the substrate, and a groove between wirings formed on the substrate is embedded with the silicon oxide film.

A method of manufacturing a semiconductor device according to a third aspect of the present invention for solving the above problem is as follows.
Supplying halogen gas and nitrogen gas into the chamber in which the substrate is housed;
The halogen gas and nitrogen gas are turned into plasma to generate halogen gas plasma and nitrogen gas plasma,
Etching a member to be etched made of boric acid with the halogen gas plasma to generate a precursor of boron and halogen,
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a boron nitride film is formed on the substrate, and a groove formed in the substrate is filled with the boron nitride film.

A method for manufacturing a semiconductor device according to a fourth aspect of the present invention for solving the above problem is as follows.
Halogen gas is supplied into the chamber in which the substrate is accommodated, and the halogen gas is turned into plasma to generate halogen gas plasma.
Etching a member to be etched composed of boric acid with the halogen gas plasma generates a precursor of boric acid and halogen,
Generating nitrogen gas plasma by converting nitrogen gas into plasma outside the chamber, and supplying the nitrogen gas plasma to the substrate;
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a boron nitride film is formed on the substrate, and a groove formed in the substrate is filled with the boron nitride film.

A method for manufacturing a semiconductor device according to a fifth aspect of the present invention for solving the above problem is as follows.
Supplying fluorine gas and oxygen gas into the chamber in which the substrate is accommodated;
The fluorine gas and oxygen gas are converted into plasma to generate fluorine gas plasma and oxygen gas plasma,
Etching a member to be etched made of silicon with the fluorine gas plasma to generate a precursor of the silicon and fluorine,
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a silicon fluorinated oxide film is formed on the substrate, and a groove formed in the substrate is filled with the silicon fluorinated oxide film.

A method of manufacturing a semiconductor device according to a sixth aspect of the invention for solving the above problem is as follows.
Fluorine gas is supplied into the chamber in which the substrate is accommodated, and the fluorine gas is converted into plasma to generate fluorine gas plasma.
Etching a member to be etched made of silicon with the fluorine gas plasma to generate a precursor of the silicon and fluorine,
Generating oxygen gas plasma by converting oxygen gas into plasma outside the chamber, and supplying the oxygen gas plasma to the substrate;
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a silicon fluorinated oxide film is formed on the substrate, and a groove formed in the substrate is filled with the silicon fluorinated oxide film.

A manufacturing method of a semiconductor device according to a seventh invention for solving the above-described problem is as follows.
Supplying fluorine gas into the chamber in which the substrate is housed;
The fluorine gas is turned into plasma to generate fluorine gas plasma,
Etching a member to be etched made of silicon oxide with the fluorine gas plasma to generate a precursor of the silicon oxide and fluorine,
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a silicon fluorinated oxide film is formed on the substrate, and a groove formed in the substrate is filled with the silicon fluorinated oxide film.

A method for manufacturing a semiconductor device according to an eighth invention for solving the above-described problems is as follows.
Supplying halogen gas and oxygen gas into the chamber in which the substrate is accommodated;
The halogen gas and oxygen gas are turned into plasma to generate halogen gas plasma and oxygen gas plasma,
Etching a member to be etched composed of silicon and another member to be etched composed of carbon with the halogen gas plasma allows the precursor of silicon and halogen and the other of carbon and halogen to be etched. Producing a precursor,
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a silicon carbide oxide film is formed on the substrate, and a groove formed in the substrate is embedded by the silicon carbide oxide film.

A method for manufacturing a semiconductor device according to a ninth invention for solving the above-described problems is as follows.
Halogen gas is supplied into the chamber in which the substrate is accommodated, and the halogen gas is turned into plasma to generate halogen gas plasma.
Etching a member to be etched composed of silicon and another member to be etched composed of carbon with the halogen gas plasma allows the precursor of silicon and halogen and the other of carbon and halogen to be etched. Producing a precursor,
Generating oxygen gas plasma by converting oxygen gas into plasma outside the chamber, and supplying the oxygen gas plasma to the substrate;
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a silicon carbide oxide film is formed on the substrate, and a groove formed in the substrate is embedded by the silicon carbide oxide film.

A method of manufacturing a semiconductor device according to a tenth aspect of the invention for solving the above problem is as follows.
Supplying halogen gas into the chamber in which the substrate is housed;
The halogen gas is turned into plasma to generate halogen gas plasma,
Etching a member to be etched made of silicon oxide and another member to be etched made of carbon with the halogen gas plasma allows the precursor of the silicon oxide and the halogen, and the carbon and the halogen to With other precursors,
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a silicon carbide oxide film is formed on the substrate, and a groove formed in the substrate is embedded by the silicon carbide oxide film.

A method of manufacturing a semiconductor device according to an eleventh invention for solving the above-described problem is as follows.
Supplying fluorine gas into the chamber in which the substrate is housed;
The fluorine gas is turned into plasma to generate fluorine gas plasma,
Etching a member to be etched made of carbon with the fluorine gas plasma to generate a precursor of the carbon and fluorine,
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a fluorocarbon film is formed on the substrate, and a groove formed in the substrate is filled with the fluorocarbon film.

A method for manufacturing a semiconductor device according to a twelfth aspect of the present invention for solving the above problem
In the method for manufacturing a semiconductor device according to any one of the first to eleventh inventions,
After the insulating film is formed, the insulating film is subjected to a high-temperature and short-time heat treatment, a rare gas plasma treatment, or a hydrogen plasma treatment in an inert gas atmosphere.

A method for manufacturing a semiconductor device according to a thirteenth aspect of the present invention for solving the above problem is as follows.
In the method for manufacturing a semiconductor device according to any one of the first to twelfth inventions,
After the insulating film is formed, the insulating film is subjected to an oxidation treatment in an oxygen or water vapor atmosphere, an oxygen plasma treatment, or an oxygen radical treatment.

A method for manufacturing a semiconductor device according to a fourteenth aspect of the present invention for solving the above problem is as follows.
In the method for manufacturing a semiconductor device according to any one of the first to thirteenth inventions,
The grooves formed in the substrate are arranged to have substantially the same size.

A method for manufacturing a semiconductor device according to a fifteenth aspect of the present invention for solving the above problem is as follows.
In the method for manufacturing a semiconductor device according to any one of the first to fourteenth inventions,
Before forming the insulating film, a protective layer made of Al ₂ O ₃ , SiO ₂ , or Si ₃ N ₄ is formed.

A method for manufacturing a semiconductor device according to a sixteenth aspect of the present invention for solving the above problem is as follows.
A part of the bottom side of the groove formed in the substrate is embedded with an insulating film by the method for manufacturing a semiconductor device according to any one of the first to fifteenth inventions,
After the insulating film is formed, the groove is completely filled with another insulating film formed by a high density plasma CVD method, a SOD (Spin on Dielectric) method, a plasma CVD method, or a thermal CVD method.

A method for manufacturing a semiconductor device according to a seventeenth aspect of the present invention for solving the above problem is as follows.
In the method for manufacturing a semiconductor device according to any one of the third to eleventh inventions,
The grooves formed in the substrate are element isolation grooves, grooves between electrodes, or grooves between wirings.

A method of manufacturing a semiconductor device according to an eighteenth aspect of the invention for solving the above problem is as follows.
Supplying halogen gas and oxygen gas into the chamber in which the substrate is accommodated;
The halogen gas and oxygen gas are turned into plasma to generate halogen gas plasma and oxygen gas plasma,
Etching a member to be etched made of silicon with the halogen gas plasma to generate a precursor of the silicon and halogen,
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a silicon oxide film is formed on the substrate, and an element isolation groove formed on the substrate is embedded with the silicon oxide film,
After the silicon oxide film is formed, the silicon oxide film is subjected to a high-temperature and short-time heat treatment, a rare gas plasma treatment, or a hydrogen plasma treatment in an inert gas atmosphere.

A method for manufacturing a semiconductor device according to a nineteenth aspect of the present invention for solving the above problem is as follows.
Supplying halogen gas and oxygen gas into the chamber in which the substrate is accommodated;
The halogen gas and oxygen gas are turned into plasma to generate halogen gas plasma and oxygen gas plasma,
Etching a member to be etched made of silicon with the halogen gas plasma to generate a precursor of the silicon and halogen,
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a silicon oxide film is formed on the substrate, and an element isolation groove formed on the substrate is embedded with the silicon oxide film,
After the silicon oxide film is formed, the silicon oxide film is subjected to oxidation treatment in an oxygen or water vapor atmosphere, oxygen plasma treatment, or oxygen radical treatment.

A method for manufacturing a semiconductor device according to a twentieth aspect of the invention for solving the above problem is as follows.
After forming the groove for element isolation on the substrate with the same size,
Supplying a halogen gas and an oxygen gas into the chamber containing the substrate;
The halogen gas and oxygen gas are turned into plasma to generate halogen gas plasma and oxygen gas plasma,
Etching a member to be etched made of silicon with the halogen gas plasma to generate a precursor of the silicon and halogen,
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a silicon oxide film is formed on the substrate, and the element isolation trench is buried with the silicon oxide film.

A method for manufacturing a semiconductor device according to a twenty-first aspect of the present invention for solving the above problem is as follows.
After forming a protective layer made of Al ₂ O ₃ , SiO ₂ , or Si ₃ N ₄ in advance on a substrate on which a groove for element isolation is formed,
Supplying a halogen gas and an oxygen gas into the chamber containing the substrate;
The halogen gas and oxygen gas are turned into plasma to generate halogen gas plasma and oxygen gas plasma,
Etching a member to be etched made of silicon with the halogen gas plasma to generate a precursor of the silicon and halogen,
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a silicon oxide film is formed on the protective layer, and the element isolation trench is filled with the silicon oxide film.

A method for manufacturing a semiconductor device according to a twenty-second aspect of the present invention for solving the above problem is as follows.
Supplying halogen gas and oxygen gas into the chamber in which the substrate is accommodated;
The halogen gas and oxygen gas are turned into plasma to generate halogen gas plasma and oxygen gas plasma,
Etching a member to be etched made of silicon with the halogen gas plasma to generate a precursor of the silicon and halogen,
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a silicon oxide film is formed on the substrate, and the silicon oxide film embeds a part on the bottom side of the element isolation groove formed on the substrate,
After the silicon oxide film is formed, the trench is completely filled with another insulating film formed by high density plasma CVD, SOD (Spin on Dielectric), plasma CVD, or thermal CVD. .

A method for manufacturing a semiconductor device according to a twenty-third aspect of the present invention for solving the above problem is as follows.
Halogen gas is supplied into the chamber in which the substrate is accommodated, and the halogen gas is turned into plasma to generate halogen gas plasma.
Etching a member to be etched made of silicon with the halogen gas plasma to generate a precursor of the silicon and halogen,
Generating oxygen gas plasma by converting oxygen gas into plasma outside the chamber, and supplying the oxygen gas plasma to the substrate;
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a silicon oxide film is formed on the substrate, and an element isolation groove formed on the substrate is embedded with the silicon oxide film,
After the silicon oxide film is formed, the silicon oxide film is subjected to a high-temperature and short-time heat treatment, a rare gas plasma treatment, or a hydrogen plasma treatment in an inert gas atmosphere.

A method for manufacturing a semiconductor device according to a twenty-fourth aspect of the present invention for solving the above problem is as follows:
Halogen gas is supplied into the chamber in which the substrate is accommodated, and the halogen gas is turned into plasma to generate halogen gas plasma.
Etching a member to be etched made of silicon with the halogen gas plasma to generate a precursor of the silicon and halogen,
Generating oxygen gas plasma by converting oxygen gas into plasma outside the chamber, and supplying the oxygen gas plasma to the substrate;
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a silicon oxide film is formed on the substrate, and an element isolation groove formed on the substrate is embedded with the silicon oxide film,
After the silicon oxide film is formed, the silicon oxide film is subjected to oxidation treatment in an oxygen or water vapor atmosphere, oxygen plasma treatment, or oxygen radical treatment.

A method for manufacturing a semiconductor device according to a twenty-fifth aspect of the present invention for solving the above problem is as follows:
After forming the groove for element isolation on the substrate with the same size,
Halogen gas is supplied to the inside of the chamber containing the substrate, and the halogen gas is converted into plasma to generate halogen gas plasma.
Etching a member to be etched made of silicon with the halogen gas plasma to generate a precursor of the silicon and halogen,
Generating oxygen gas plasma by converting oxygen gas into plasma outside the chamber, and supplying the oxygen gas plasma to the substrate;
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a silicon oxide film is formed on the substrate, and the element isolation trench is buried with the silicon oxide film.

A manufacturing method of a semiconductor device according to a twenty-sixth aspect of the present invention for solving the above-described problem is as follows.
After forming a protective layer made of Al ₂ O ₃ , SiO ₂ , or Si ₃ N ₄ in advance on a substrate on which a groove for element isolation is formed,
Halogen gas is supplied to the inside of the chamber containing the substrate, and the halogen gas is converted into plasma to generate halogen gas plasma.
Etching a member to be etched made of silicon with the halogen gas plasma to generate a precursor of the silicon and halogen,
Generating oxygen gas plasma by converting oxygen gas into plasma outside the chamber, and supplying the oxygen gas plasma to the substrate;
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a silicon oxide film is formed on the protective layer, and the element isolation trench is filled with the silicon oxide film.

A method for manufacturing a semiconductor device according to a twenty-seventh aspect of the present invention for solving the above problem is as follows:
Halogen gas is supplied into the chamber in which the substrate is accommodated, and the halogen gas is turned into plasma to generate halogen gas plasma.
Etching a member to be etched made of silicon with the halogen gas plasma to generate a precursor of the silicon and halogen,
Generating oxygen gas plasma by converting oxygen gas into plasma outside the chamber, and supplying the oxygen gas plasma to the substrate;
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a silicon oxide film is formed on the substrate, and the silicon oxide film embeds a part on the bottom side of the element isolation groove formed on the substrate,
After the silicon oxide film is formed, the trench is completely filled with another insulating film formed by high density plasma CVD, SOD (Spin on Dielectric), plasma CVD, or thermal CVD. .

A semiconductor device manufacturing apparatus according to a twenty-eighth aspect of the present invention for solving the above problems is as follows.
A chamber containing a substrate;
A member to be etched composed of silicon provided at a position facing the substrate in the chamber;
Halogen gas supply means for supplying halogen gas into the chamber;
Raw material gas supply means for supplying oxygen gas into the chamber;
Plasma generating means for converting the halogen gas and oxygen gas into plasma to generate halogen gas plasma and oxygen gas plasma inside the chamber;
Temperature control means for lowering the temperature of the substrate lower than the temperature of the member to be etched,
Etching the member to be etched with the halogen gas plasma generates a precursor of the silicon and halogen, adsorbs the precursor to the substrate by the temperature control means, and adsorbs the precursor by the halogen gas plasma A precursor is reduced to silicon and oxidized by the oxygen gas plasma to form an insulating film made of a silicon oxide film on the substrate,
The silicon oxide film embeds grooves between electrodes or wirings formed on the substrate.

A semiconductor device manufacturing apparatus according to a twenty-ninth aspect of the present invention for solving the above problems is as follows.
A chamber containing a substrate;
A member to be etched composed of silicon provided at a position facing the substrate in the chamber;
Halogen gas supply means for supplying halogen gas into the chamber;
Plasma generating means for converting the halogen gas into plasma and generating halogen gas plasma inside the chamber;
An external plasma generation chamber communicating with the interior of the chamber;
Raw material gas supply means for supplying oxygen gas to the external plasma generation chamber;
Temperature control means for lowering the temperature of the substrate lower than the temperature of the member to be etched,
Etching the member to be etched with the halogen gas plasma generates a precursor of the silicon and halogen, adsorbs the precursor to the substrate by the temperature control means, and adsorbs the precursor by the halogen gas plasma The precursor is reduced to silicon and oxidized by oxygen gas plasma from the external plasma generation chamber to form an insulating film made of a silicon oxide film on the substrate,
The silicon oxide film embeds grooves between electrodes or wirings formed on the substrate.

A semiconductor device manufacturing apparatus according to a thirtieth aspect of the present invention for solving the above problems is as follows.
A chamber containing a substrate;
A member to be etched made of boric acid provided at a position facing the substrate in the chamber;
Halogen gas supply means for supplying halogen gas into the chamber;
Raw material gas supply means for supplying nitrogen gas into the chamber;
Plasma generating means for converting the halogen gas and nitrogen gas into plasma and generating halogen gas plasma and nitrogen gas plasma inside the chamber;
Temperature control means for lowering the temperature of the substrate lower than the temperature of the member to be etched,
Etching the member to be etched with the halogen gas plasma generates a precursor of the boric acid and halogen, adsorbs the precursor to the substrate by the temperature control means, and adsorbs the precursor by the halogen gas plasma. And reducing the precursor to boron and nitriding with the nitrogen gas plasma to form an insulating film made of a boron nitride film on the substrate,
The boron nitride film embeds a groove for element isolation, a groove between electrodes, or a groove between wires formed in the substrate.

A semiconductor device manufacturing apparatus according to a thirty-first aspect of the present invention for solving the above problems is as follows.
A chamber containing a substrate;
A member to be etched made of boric acid provided at a position facing the substrate in the chamber;
Halogen gas supply means for supplying halogen gas into the chamber;
Plasma generating means for converting the halogen gas into plasma and generating halogen gas plasma inside the chamber;
An external plasma generation chamber communicating with the interior of the chamber;
Raw material gas supply means for supplying nitrogen gas to the external plasma generation chamber;
Temperature control means for lowering the temperature of the substrate lower than the temperature of the member to be etched,
Etching the member to be etched with the halogen gas plasma generates a precursor of the boric acid and halogen, adsorbs the precursor to the substrate by the temperature control means, and adsorbs the precursor by the halogen gas plasma. Reducing the precursor to boron and nitriding with nitrogen gas plasma from the external plasma generation chamber, forming an insulating film made of a boron nitride film on the substrate;
The boron nitride film embeds a groove for element isolation, a groove between electrodes, or a groove between wires formed in the substrate.

A semiconductor device manufacturing apparatus according to a thirty-second invention for solving the above-mentioned problems is as follows.
A chamber containing a substrate;
A member to be etched composed of silicon provided at a position facing the substrate in the chamber;
Halogen gas supply means for supplying fluorine gas into the chamber;
Raw material gas supply means for supplying oxygen gas into the chamber;
Plasma generating means for converting the fluorine gas and oxygen gas into plasma to generate fluorine gas plasma and oxygen gas plasma inside the chamber;
Temperature control means for lowering the temperature of the substrate lower than the temperature of the member to be etched,
By etching the member to be etched with the fluorine gas plasma, a precursor of the silicon and fluorine is generated, the precursor is adsorbed on the substrate by the temperature control means, and the adsorbed precursor is adsorbed to the oxygen Oxidized by gas plasma to form an insulating film made of a silicon fluoride oxide film on the substrate,
A groove for element isolation, a groove between electrodes, or a groove between wirings formed in the substrate is buried with the silicon fluorinated oxide film.

A semiconductor device manufacturing apparatus according to a thirty-third invention for solving the above-mentioned problems is as follows.
A chamber containing a substrate;
A member to be etched composed of silicon provided at a position facing the substrate in the chamber;
Halogen gas supply means for supplying fluorine gas into the chamber;
Plasma generating means for converting the fluorine gas into plasma and generating fluorine gas plasma inside the chamber;
An external plasma generation chamber communicating with the interior of the chamber;
Raw material gas supply means for supplying oxygen gas to the external plasma generation chamber;
Temperature control means for lowering the temperature of the substrate lower than the temperature of the member to be etched,
Etching the member to be etched with the fluorine gas plasma generates a precursor of the silicon and fluorine, the precursor is adsorbed to the substrate by the temperature control means, and the adsorbed precursor is adsorbed to the external Oxidized by oxygen gas plasma from the plasma generation chamber, and an insulating film made of a silicon fluoride oxide film is formed on the substrate,
A groove for element isolation, a groove between electrodes, or a groove between wirings formed in the substrate is buried with the silicon fluorinated oxide film.

A semiconductor device manufacturing apparatus according to a thirty-fourth aspect of the present invention for solving the above problems is as follows.
A chamber containing a substrate;
A member to be etched made of silicon oxide provided at a position facing the substrate in the chamber;
Halogen gas supply means for supplying fluorine gas into the chamber;
Plasma generating means for converting the fluorine gas into plasma and generating fluorine gas plasma inside the chamber;
Temperature control means for lowering the temperature of the substrate lower than the temperature of the member to be etched,
Etching the member to be etched with the fluorine gas plasma generates a precursor of the silicon oxide and fluorine, the precursor is adsorbed to the substrate by the temperature control means, and the silicon fluorinated silicon oxide is deposited on the substrate. An insulating film made of a film is formed,
A groove for element isolation, a groove between electrodes, or a groove between wirings formed in the substrate is buried with the silicon fluorinated oxide film.

A semiconductor device manufacturing apparatus according to a thirty-fifth aspect of the present invention for solving the above problems is as follows:
A chamber containing a substrate;
An etched member made of silicon and another etched member made of carbon provided at a position facing the substrate in the chamber;
Halogen gas supply means for supplying halogen gas into the chamber;
Raw material gas supply means for supplying oxygen gas into the chamber;
Plasma generating means for converting the halogen gas and oxygen gas into plasma to generate halogen gas plasma and oxygen gas plasma inside the chamber;
Temperature control means for lowering the temperature of the substrate lower than the temperature of the member to be etched,
Etching the member to be etched with the halogen gas plasma generates the precursor of silicon and halogen and the other precursor of carbon and halogen, and the precursor is applied to the substrate by the temperature control means. Adsorbing, reducing the adsorbed precursor to silicon and carbon by the halogen gas plasma and oxidizing the oxygen gas plasma to form an insulating film made of a silicon carbide oxide film on the substrate,
The silicon carbide oxide film embeds a groove for element isolation, a groove between electrodes, or a groove between wires formed in the substrate.

A semiconductor device manufacturing apparatus according to a thirty-sixth aspect of the present invention for solving the above problems is as follows.
A chamber containing a substrate;
An etched member made of silicon and another etched member made of carbon provided at a position facing the substrate in the chamber;
Halogen gas supply means for supplying halogen gas into the chamber;
Plasma generating means for converting the halogen gas into plasma and generating halogen gas plasma inside the chamber;
An external plasma generation chamber communicating with the interior of the chamber;
Raw material gas supply means for supplying oxygen gas to the external plasma generation chamber;
Temperature control means for lowering the temperature of the substrate lower than the temperature of the member to be etched,
Etching the member to be etched with the halogen gas plasma generates the precursor of silicon and halogen and the other precursor of carbon and halogen, and the precursor is applied to the substrate by the temperature control means. Adsorbed, the adsorbed precursor is reduced to silicon and carbon by the halogen gas plasma, and oxidized by the oxygen gas plasma from the external plasma generation chamber to form an insulating film made of a silicon carbide oxide film on the substrate. Membrane
The silicon carbide oxide film embeds a groove for element isolation, a groove between electrodes, or a groove between wires formed in the substrate.

A semiconductor device manufacturing apparatus according to a thirty-seventh aspect of the present invention for solving the above problems is as follows:
A chamber containing a substrate;
A member to be etched composed of silicon oxide and another member to be etched composed of carbon provided in a position facing the substrate in the chamber;
Halogen gas supply means for supplying halogen gas into the chamber;
Plasma generating means for converting the halogen gas into plasma and generating halogen gas plasma inside the chamber;
Temperature control means for lowering the temperature of the substrate lower than the temperature of the member to be etched,
Etching the member to be etched with the halogen gas plasma generates a precursor of the silicon oxide and halogen and another precursor of the carbon and halogen, and the precursor is removed from the substrate by the temperature control means. Adsorbed onto the substrate, the adsorbed precursor is reduced to silicon oxide and carbon by the halogen gas plasma, and an insulating film made of a silicon carbide oxide film is formed on the substrate,
The silicon carbide oxide film embeds a groove for element isolation, a groove between electrodes, or a groove between wires formed in the substrate.

A semiconductor device manufacturing apparatus according to a thirty-eighth aspect of the present invention for solving the above problems is as follows:
A chamber containing a substrate;
A member to be etched made of carbon provided at a position facing the substrate in the chamber;
Halogen gas supply means for supplying fluorine gas into the chamber;
Plasma generating means for converting the fluorine gas into plasma and generating fluorine gas plasma inside the chamber;
Temperature control means for lowering the temperature of the substrate lower than the temperature of the member to be etched,
By etching the member to be etched with the fluorine gas plasma, a precursor of the carbon and fluorine is generated, the precursor is adsorbed to the substrate by the temperature control means, and a fluorocarbon film is formed on the substrate. An insulating film is formed,
A groove for element isolation, a groove between electrodes, or a groove between wirings formed in the substrate is filled with the fluorocarbon film.

A semiconductor device manufacturing apparatus according to a thirty-ninth aspect of the present invention for solving the above problems is as follows.
In the semiconductor device manufacturing apparatus according to any one of the twenty-eighth to thirty-eighth inventions,
After the formation of the insulating film, post-processing means for performing a high-temperature and short-time heat treatment in an inert gas atmosphere, a rare gas plasma treatment, or a hydrogen plasma treatment is provided.

A semiconductor device manufacturing apparatus according to a fortieth aspect of the present invention for solving the above problems is as follows:
In the semiconductor device manufacturing apparatus according to any one of the 28th to 39th inventions,
After the formation of the insulating film, there is provided an oxidizing means for performing an oxidation treatment in an oxygen or water vapor atmosphere, an oxygen plasma treatment, or an oxygen radical treatment on the insulating film.

A semiconductor device manufacturing apparatus according to a forty-first aspect of the present invention for solving the above problems is as follows.
In the semiconductor device manufacturing apparatus according to any one of the 28th to 40th inventions,
The element isolating grooves, the interelectrode grooves, or the interwiring grooves formed on the substrate are the same size.

A semiconductor device manufacturing apparatus according to a forty-second aspect of the present invention for solving the above problems is as follows.
Having a plurality of chambers in which substrates are accommodated;
One chamber includes the semiconductor device manufacturing apparatus according to any one of the 28th to 41st inventions,
In another chamber, another semiconductor device manufacturing apparatus for forming a protective layer of either Al ₂ O ₃ , SiO ₂ , or Si ₃ N ₄ is provided.
A protective layer made of Al ₂ O ₃ , SiO ₂ , or Si ₃ N ₄ is formed before the insulating film is formed by the semiconductor device manufacturing apparatus according to any of the 28th to 41st inventions. It is characterized by that.

A semiconductor device manufacturing apparatus according to a forty-third aspect of the present invention for solving the above problems is as follows.
Having a plurality of chambers in which substrates are accommodated;
One or more chambers are provided with the semiconductor device manufacturing apparatus according to any of the twenty-eighth to forty-second inventions,
In another chamber, there is provided another semiconductor device manufacturing apparatus in which another insulating film is formed by any one of a high-density plasma CVD method, a SOD (Spin on Dielectric) method, a plasma CVD method, or a thermal CVD method. ,
An insulating film formed by the semiconductor device manufacturing apparatus according to any one of the twenty-eighth to forty-second inventions, wherein a part of the element isolation groove, the groove between the electrodes, or the groove between the wirings formed on the substrate is on the bottom side. As well as embedding
After forming the insulating film, the groove is completely filled with another insulating film by a high density plasma CVD method, a SOD (Spin on Dielectric) method, a plasma CVD method, or a thermal CVD method. And

  According to the first, second, seventeenth, twenty-eighth, and twenty-ninth inventions, it is possible to provide a silicon oxide film buried between gate electrodes (between sidewalls) and between wirings having a very narrow width, which is not conventionally provided. For example, further increase in the integration density of ULSI can be realized. In addition, an insulating film can be embedded between gate electrodes with narrow widths (between sidewalls) at a low temperature, so that the transistor region and the diffusion layer can be prevented from spreading, and the performance of elements such as transistors can be improved. Further, the CMP polishing time can be shortened, and an insulating film can be formed at low cost.

  According to the third to eleventh and thirty-third to thirty-eighth inventions, since the insulating film having a low dielectric constant is formed, electrical interference between elements can be prevented.

  According to the twelfth, eighteenth, twenty-third, and thirty-ninth inventions, the halogen in the formed insulating film can be removed by performing the annealing process.

According to the thirteenth, nineteenth, twenty-fourth, and forty-first inventions, by performing the oxidation treatment, the defect density in the formed SiO ₂ film can be reduced, and the defect rate of the semiconductor device can be reduced.

  According to the fourteenth, twentieth, twenty-fifth and forty-first aspects of the invention, since the sizes of the grooves formed on the surface of the substrate are made uniform, equivalent embedding properties can be stably obtained over the entire surface of the substrate.

  According to the fifteenth, twenty-first, twenty-sixth and forty-second inventions, since the protective layer is provided on the base, it is possible to prevent the halogen during the film formation from reacting with the base.

  According to the sixteenth, twenty-second, twenty-seventh and forty-third inventions, a portion on the bottom side of the groove is buried with the insulating film according to the present invention, and the upper layer side is buried with the insulating film according to the conventional method, so that the embedding property is impaired. Therefore, embedding can be realized at a low cost.

  According to the eighteenth to twenty-seventh aspects of the present invention, it is possible to provide a silicon oxide film embedded in an element isolation trench having a very narrow width, which has not been achieved in the past, and for example, further increasing the integration density of ULSI. can do. In addition, an insulating film can be embedded at a low temperature in an element isolation groove having a narrow width, so that the transistor region and the diffusion layer can be prevented from expanding, and the performance of elements such as transistors can be improved. Further, the CMP polishing time can be shortened, and an insulating film can be formed at low cost.

  Hereinafter, a semiconductor device manufacturing method using the manufacturing apparatus and an application example thereof will be described with reference to the semiconductor device manufacturing apparatus according to the present invention.

<First Embodiment>
FIG. 15 is a schematic perspective view showing an example of an embodiment of a semiconductor device manufacturing apparatus according to the present invention.
As shown in FIG. 15, a support base 2 is provided near the bottom of the chamber 1 formed in a cylindrical shape, and a substrate 3 is placed on the support base 2. The support base 2 is provided with a temperature control means 6 including a heater 4 and a refrigerant flow means 5, and the support base 2 is maintained at a predetermined temperature (for example, the substrate 3 is 450 ° C. or lower, for example, 300 ° C.) by the temperature control means 6. Temperature).

  The upper surface of the chamber 1 is an opening, and the opening is closed by a plate-like ceiling plate 25 made of an insulating material (for example, ceramic). Above the ceiling plate 25 is provided a plasma antenna 27 for converting the gas supplied into the chamber 1 into plasma, and the plasma antenna 27 is formed in a planar ring shape parallel to the surface of the ceiling plate 25.

  The plasma antenna 27 is connected to the matching unit 10 and the power source 11 and supplied with a high frequency current. The interior of the chamber 1 closed by the ceiling plate 25 is maintained at a predetermined pressure by the vacuum device 8.

  On the upper side wall of the chamber 1, a member to be etched 20 made of silicon is sandwiched. FIG. 16 is a schematic plan view of the member 20 to be etched. As shown in FIG. 16, the member to be etched 20 includes a plurality of protrusions 21 and a ring part 22, and a notch 23 is provided between the protrusions 21.

  In the chamber 1, the member to be etched 20 is installed at a position facing the substrate 3. The member to be etched 20 is divided into a plurality of parts along the circumferential direction of the side wall of the chamber 1, and the protrusions 21 as the divided parts are It installs so that it may protrude toward the center side from the ring part 22 installed along.

  That is, a plurality of protrusions 21 are provided in the circumferential direction from the inner wall of the chamber 1 and in the circumferential direction, and a notch 23 (space) exists between the protrusions 21. For this reason, it arrange | positions between the board | substrate 3 and the ceiling board 25 so that it may become a discontinuous state with respect to the flow direction of the electric current which flows into the plasma antenna 27. FIG.

  Between the member to be etched 20 and the ceiling plate 25 on the upper side wall of the chamber 1, a gas 18 in which chlorine gas as a halogen gas and oxygen gas are mixed inside the chamber 1 (chlorine concentration with He, Ar, etc.). Is ≦ 50 volume%, preferably diluted to about 10 volume%). The concentration of oxygen gas in the gas 18 is low, about 0.1 to 10% by volume.

  The nozzle 12 opens above the member to be etched 20 toward the center of the chamber 1, and a gas 18 is sent to the nozzle 12 via the flow rate controller 13. Gases that are not involved in film formation are exhausted from the exhaust port 17. The nozzle 12 and the flow rate controller 13 constitute halogen gas supply means and source gas supply means.

  In the above-described manufacturing apparatus of the present embodiment, the halogen gas and the oxygen gas are supplied as mixed gas into the chamber 1 by the same nozzle 12, but the halogen gas and the oxygen gas are supplied separately. A dedicated supply means may be installed. In this embodiment, by using the same nozzle, the configuration of the apparatus is simplified and the apparatus cost is reduced. However, when different supply means are used, the adjustment of each gas supply amount is more accurate. Can be done.

In the manufacturing apparatus of the present embodiment described above, an insulating film (SiO ₂ ) film is formed by the method described in detail below.

First, the gas 18 is supplied from the nozzle 12 into the chamber 1 and electromagnetic waves are incident from the plasma antenna 27 into the chamber 1, thereby ionizing the chlorine gas and the oxygen gas in the gas 18 to generate chlorine gas plasma and Oxygen gas plasma is generated. The plasma is generated in the region shown by the gas plasma 14. The reaction at this time can be expressed by the following formula.
Cl ₂ → 2Cl ^* (1)
O ₂ → 2O ^* (2)
Here, Cl ^* represents a chlorine gas radical, and O ^* represents an oxygen gas radical.

  When this gas plasma 14 acts on the member to be etched 20 made of silicon, the member to be etched 20 is heated and the following etching reaction occurs in the member to be etched 20.

That is, it is an etching reaction of the member to be etched 20 by chlorine gas plasma, and is represented by the following equation, for example.
^{Si (s) + XCl * →} SiClX (g) ·· (3)
Here, s represents a solid state, g represents a gas state, and X = 1 to 4. Expression (3) represents a state in which silicon constituting the member to be etched 20 is etched and gasified by chlorine gas plasma. The precursor 15 is gasified SiClX and a substance (SiaClb) having a composition ratio different from that.

The member 20 to be etched is heated by generating the gas plasma 14, and the temperature control means 6 sets the temperature of the substrate 3 to be lower than the temperature of the member 20 to be etched. As a result, the silicon chloride gas as the precursor 15 is adsorbed on the substrate 3. The reaction at this time is represented by the following formula, for example.
SiClX (g) → SiClX (ad) (4)
Here, ad represents an adsorption state.

Silicon chloride adsorbed on the substrate 3 is reduced to chlorine by chlorine gas radicals. The reaction at this time is represented by the following formula, for example.
SiClX (ad) + XCl ^* → Si (s) + XCl ₂ ↑ (5)

  Since silicon chloride is highly volatile, it may be exhausted without being involved in film formation. However, by making the substrate temperature lower than usual, the silicon chloride is adsorbed on the substrate 3 and is formed. It can be involved in the membrane.

When the above reactions are summarized until silicon constituting the member to be etched 20 is formed on the substrate 3, the following reaction is expressed, for example.
Si (s) → SiClX (g) → SiClX (ad) → Si (s) (6)
In the course of this reaction, oxygen gas radicals generated by the reaction shown in the above equation (2) mainly contribute to the following four reactions, whereby an amorphous SiO ₂ film is formed on the substrate 3.

  The first reaction is the oxidation of Si (s) formed on the substrate 3 by oxygen gas radicals. The second reaction is oxidation of SiClX (ad) with oxygen gas radicals. The third reaction is oxidation of SiClX (g) with oxygen gas radicals and film formation. The fourth reaction is etching and film formation by oxygen gas radicals of Si (s) constituting the member 20 to be etched. Hereinafter, each reaction will be described.

For the first reaction, silicon deposited on the substrate 3 is oxidized by oxygen gas radicals to form silicon oxide. The reaction at this time is represented by the following formula, for example.
Si (s) + 2O ^* → SiO ₂ (s) (7)

For the second reaction, silicon chloride adsorbed on the substrate 3 is oxidized by oxygen gas radicals to form silicon oxide. The reaction at this time is represented by the following formula, for example.
SiClX (ad) + 2O ^* → SiO ₂ (s) + 2 / XCl ₂ ↑ (8)

For the third reaction, gaseous silicon chloride is oxidized by oxygen gas radicals to form gaseous silicon oxide and is deposited on the substrate 3. The reaction at this time is represented by the following formula, for example.
SiClX (g) + 2O ^* → SiO ₂ (g) + 2 / XCl ₂ ↑ (9)
SiO ₂ (g) → SiO ₂ (s) (10)

Regarding the fourth reaction, Si (s) constituting the member to be etched 20 is etched by oxygen gas radicals to generate gaseous silicon oxide, which is deposited on the substrate 3. The reaction at this time is represented by the following formula, for example.
Si (s) + XO ^* → SiOX (g) → SiO ₂ (s) (11)

  However, since the oxygen gas concentration in the gas 18 is lower than that of the chlorine gas, it is considered that the action of the gas plasma on the member to be etched 20 is almost due to the chlorine gas plasma, and the fourth reaction ( The above equation (11)) hardly occurs, and when the first reaction (the above equation (7)) and the second reaction (the above equation (8)) occur preferentially as the action of the oxygen gas plasma. Conceivable.

The film formation reaction described above is an example of a reaction that can occur in the chamber. For example, other possible reactions include the following reactions. A part of the gasified silicon chloride generated in the above formula (3) is reduced by chlorine gas radicals to become silicon in a gaseous state before adsorbing to the substrate 3 (see the above formula (4)). The reaction at this time is represented by the following formula, for example.
SiClX (g) + XCl ^* → Si (g) + XCl ₂ ↑ (12)

  Thereafter, the silicon in the gaseous state is adsorbed on the substrate 3 to form a film. Also in this process, the silicon in the gaseous state and the silicon deposited on the substrate 3 are oxidized by oxygen gas radicals to become silicon oxide.

As described above, a silicon oxide thin film can be formed on the substrate 3. The SiO ₂ film produced by the above-described reaction mode is a high-quality SiO ₂ film with few point defects, and a groove having a particularly large aspect ratio, such as a groove formed in the substrate 3, for example, for forming STI. The substrate 3 having the separation pattern groove can be formed with a good embedding property, and can also be formed with a good embedding property between the gate electrodes and between the AlCu wirings. This is because the SiO ₂ film formation according to the present embodiment is performed by the above-described specific reaction mode and so-called bottom-up film formation can be performed.

  In the conventional high-density plasma CVD method or the like, not only the bottom surface of the groove but also the substrate surface and the inner side wall of the groove are formed at the same time when the film is formed on the substrate on which the groove is formed. There is a problem that voids are generated as a result of the film entrance being blocked by film formation before being buried, or hangover occurs on the substrate surface. On the other hand, bottom-up film formation is film formation performed preferentially from the bottom of the groove while suppressing film formation on the substrate surface and the inner side wall of the groove.

The principle of bottom-up film formation is as follows. That is, as described above, SiO ₂ film formation on the substrate 3 is based on adsorption of silicon chloride as the precursor 15 and reduction of silicon chloride by chlorine gas radicals, but the chlorine gas radicals are applied to the member 20 to be etched. On the other hand, as can be seen from having an etching action, depending on the concentration, silicon chloride adsorbed on the substrate 3 or subsequently reduced silicon may be etched. In this case, film formation is not performed.

In the case where a groove is formed in the substrate 3, the concentration of chlorine gas radicals becomes lower in the groove as it approaches the bottom. Therefore, a reduction reaction mainly due to chlorine gas radicals occurs at the bottom of the groove, whereas an etching reaction mainly occurs at the top of the groove and the substrate surface. Using this property, the concentration of chlorine gas radicals is adjusted to suppress film formation on the substrate surface and the inner side wall of the groove (making the etching reaction dominant), while forming a film preferentially from the bottom of the groove. By doing this (making the reduction reaction dominant), the SiO ₂ film is formed in the groove with no voids and good embedding property. The reduction reaction and the etching reaction can be adjusted by adjusting the concentration of chlorine gas radicals or adjusting the temperature of the substrate 3 during film formation.

  Thus, according to the bottom-up film formation, the inside of the groove can be completely buried. Further, in the bottom-up film formation, it is possible to form a film only in the groove of the substrate, and a process of removing an extra thin film formed on the substrate required by the conventional high-density plasma CVD method ( CMP polishing) can be eliminated or completed in a short time.

As described above, according to the present invention, the STI trench having a large aspect ratio, and the SiO ₂ film can be satisfactorily embedded between the gate electrodes and between the AlCu wirings, and has excellent electrical characteristics. Integrated circuits can be manufactured.

Note that the present invention is not limited to the SiO ₂ film as the insulating film. In addition, a low dielectric constant film such as BN, silicon oxide containing fluorine, SiOC, or C: F is used at a low temperature (100 ° C. <T <400 And even such a low dielectric constant film can be satisfactorily embedded in a groove having a large aspect ratio by the same principle.

For example, in the case of forming a BN film, in the manufacturing apparatus of this embodiment described above, a member to be etched composed of B ₂ O ₃ (boric acid) is used, and a small amount of N ₂ is added as a source gas. Cl ₂ may be used.

Further, when forming a silicon oxide film containing fluorine, in the manufacturing apparatus of this embodiment described above, a member to be etched composed of Si (or SiO ₂ ) is used, and a small amount of O ₂ is used as a source gas. F ₂ (or F ₂₎ may be used with the addition.

When forming the SiOC film, the manufacturing apparatus of the present embodiment described above uses two types of members to be etched, which are composed of Si (or SiO ₂ ), and members to be etched, which are composed of C. As the gas, Cl ₂ (or Cl ₂ ) to which a small amount of O ₂ is added may be used. When the desired composition ratio of the SiOC film is desired, the area ratio of the two types of members to be etched may be changed.

Further, in the case of forming the C: F film, the member to be etched composed of C may be used in the manufacturing apparatus of the present embodiment described above, and F ₂ may be used as the source gas.

  Next, some examples of the semiconductor device to which the manufacturing apparatus of this embodiment is applied will be described.

In this example, an insulating film (for example, SiO ₂ film) is embedded in an STI trench using the manufacturing apparatus of this embodiment, which is the process flow of the conventional semiconductor device described above. This is an alternative to step 3.

  Prior to the STI formation, the STI trench 105 is formed by performing the same steps as those in Steps 1 and 2 (see FIGS. 1 and 2) in the process flow of the conventional semiconductor device. Therefore, the description of the overlapping steps 1 and 2 is omitted here.

After the trench 105 is formed, the STI SiO ₂ film is embedded using the manufacturing apparatus of the present embodiment. When the SiO ₂ film is formed by the manufacturing apparatus of the present embodiment, Cl ₂ or the like used as a source gas is used. May react with the underlying Si surface. Therefore, in order to prevent this, the protective layer 201 is formed on the base surface, and then the SiO ₂ film is formed by the manufacturing apparatus of this embodiment (see FIG. 17). Here, as the protective layer 201, a SiO ₂ film by a CVD method is deposited by 10 nm or more. As the protective layer, an Al ₂ O ₃ film or a Si ₃ N ₄ film can be used. The manufacturing apparatus of this embodiment deposits a SiO ₂ film and embeds the STI partway. At this time, the shape of the SiO ₂ film is 202, and the SiO ₂ film is formed preferentially from the bottom of the groove. .

Since the growth rate of the SiO ₂ film formed by the manufacturing apparatus of this embodiment is relatively slow, a 3000 ＳｉＯ SiO ₂ film 203a is subsequently deposited using a high-density plasma CVD method having a high growth rate (FIG. 18). In combination with SiO ₂ film using the manufacturing apparatus of the SiO ₂ film and the present embodiment using the high-speed growth can be a high-density plasma CVD method, by a multilayer structure of various types of insulating films, inexpensively STI Can be implemented. In addition to the high-density plasma CVD method, an SOD (Spin on Dielectric) method, a plasma CVD method, or a thermal CVD method may be used. In this case, a multi-chamber configuration including the manufacturing apparatus of this embodiment, the CVD apparatus for forming the insulating film, and the like is formed, and a desired SiO ₂ film is formed in each chamber. Moreover, you may include the CVD apparatus etc. which form the said protective layer. Thereafter, the semiconductor device is manufactured using a flow similar to the process flow of the conventional semiconductor device.

  In order to stably obtain the STI embedding property on the entire surface of the substrate, it is desirable that the size of the STI groove is made as uniform as possible on the entire surface of the substrate. Therefore, a dummy pattern is placed so that the sizes of the STI grooves are made uniform.

By forming an insulating film such as a SiO ₂ film in the manufacturing apparatus of this embodiment, an insulating film embedded in STI having a very narrow width and a high aspect ratio can be provided. For example, ULSI Further increase in integration density can be realized. Further, the CMP polishing time can be shortened, and the STI can be formed at a low cost.

In this example, an insulating film (for example, SiO ₂ film) is embedded between gate electrodes using the manufacturing apparatus of this embodiment, which is a step of the process flow of the conventional semiconductor device described above. 10 (see FIG. 11).

  Prior to the formation of the insulating film between the gate electrodes, the same steps as in steps 1 to 9 (see FIGS. 1 to 10) in the process flow of the conventional semiconductor device are performed to form the gate electrodes and the like. Therefore, the description of the overlapping steps 1 to 9 is also omitted here. In addition, it may replace with the conventional step 3 and may perform the process of Example 1. FIG.

A SiO ₂ film is deposited by the manufacturing apparatus of the present embodiment, and the space between the gate electrodes (between the sidewalls) is embedded halfway. The shape of the SiO ₂ film at this time seems to be 301, and the SiO ₂ film is preferentially formed only at the bottom of the groove (see FIG. 19). Thereafter, a SiO ₂ film is deposited by plasma CVD method to form an interlayer oxide film layer 302 by flattening the surface by CMP. Thus, by combining the SiO ₂ film using the manufacturing apparatus of the SiO ₂ film and the present embodiment using the plasma CVD method capable of high-speed growth, by a multilayer structure of various types of insulating films, inexpensive In addition, embedding between the gate electrodes can be realized. In addition to the plasma CVD method, an SOD (Spin on Dielectric) method, a high density plasma CVD method, or a thermal CVD method may be used. In this case as well, a desired SiO ₂ film is formed in each chamber, including the manufacturing apparatus of the present embodiment, the CVD apparatus for forming the insulating film, and the like. Moreover, you may include the CVD apparatus etc. which form the following protective layer. Thereafter, the semiconductor device is manufactured using a flow similar to the process flow of the conventional semiconductor device.

When forming the SiO ₂ film with the manufacturing apparatus of this embodiment, halogen such as Cl ₂ used as a source gas may react with the underlying metal silicide surface. In order to prevent this, SiO ₂ film by the CVD method, Al ₂ O ₃ film by the Si ₃ N ₄ film, a protective layer is formed underlying surface, then, SiO ₂ film in the manufacturing apparatus of this embodiment May be formed.

  In addition, in order to stably obtain the embeddability between the gate electrodes over the entire surface of the substrate, it is desirable to make the size between the gate electrodes as uniform as possible over the entire surface of the substrate. Therefore, dummy patterns having the same stacked structure are placed so that the sizes between the gate electrodes are made uniform.

By forming an insulating film such as a SiO ₂ film with the manufacturing apparatus of this embodiment, an insulating film embedded between gate electrodes (between sidewalls) having a very narrow width, which is not conventionally, can be provided. , Further increase in the integration density of ULSI can be realized. In addition, an insulating film can be embedded at a low temperature between narrow gate electrodes (between sidewalls), and the n ⁻ region 112a and the n ⁺ diffusion layer 116a of the transistor 118 can be prevented from spreading, and the performance of the transistor 118 can be improved. Is possible.

In this example, an insulating film (for example, SiO ₂ film) is embedded between aluminum wirings using the manufacturing apparatus of the present embodiment, which is a step of the process flow of the conventional semiconductor device described above. 12 (see FIG. 13).

  The process before forming the insulating film between the aluminum wirings is the same as the steps 1 to 11 (see FIGS. 1 to 12) in the process flow of the conventional semiconductor device to form the aluminum wirings and the like. Therefore, the description of the overlapping steps 1 to 11 is also omitted here. Instead of the conventional step 3, the process of the first embodiment and the process of the second embodiment may be performed instead of the conventional step 10.

When the SiO ₂ film is formed by the manufacturing apparatus of this embodiment, halogen may react with the AlCu wiring surface. In order to prevent this, a protective layer 401 is formed on the underlying surface, and then an SiO ₂ film is formed by the manufacturing apparatus of this embodiment. Here, a SiO ₂ film by a CVD method was deposited as the protective layer 401. As the protective layer, an Al ₂ O ₃ film or a Si ₃ N ₄ film can be used. A SiO ₂ film is deposited by the manufacturing apparatus of this embodiment, and the space between the AlCu wirings is embedded. At this time, the shape of the SiO ₂ film becomes 402a, 402b, 402c, and the SiO ₂ film is preferentially formed from the bottom of the groove, and at a wide space, the SiO ₂ film is formed like 402c. _Two films are hardly formed (see FIG. 20). Thus, when depositing an SiO ₂ film in the manufacturing apparatus of the present embodiment, the grooves formed on the substrate, among the holes, narrow grooves, preferentially with SiO ₂ film is deposited in the hole, embedding line Is called.

SiO ₂ film formed by using the manufacturing apparatus of the present embodiment, since the growth rate is relatively slow, followed by depositing a SiO ₂ film of 3000Å using high-density plasma CVD method with a high growth rate. In combination with SiO ₂ film using the manufacturing apparatus of the SiO ₂ film and the present embodiment using the high-speed growth can be a high-density plasma CVD method, by a multilayer structure of various types of insulating films, low cost AlCu Embedding between wirings can be realized. In addition to the high-density plasma CVD method, an SOD (Spin on Dielectric) method, a plasma CVD method, or a thermal CVD method may be used. Also in this case, the manufacturing apparatus of the present embodiment and the apparatus of the above method are used to form a multi-chamber structure, and a desired SiO ₂ film is formed in each chamber. Thereafter, the semiconductor device is manufactured using a flow similar to the process flow of the conventional semiconductor device.

  In order to stably obtain the embeddability between the wirings on the entire surface of the substrate, it is desirable that the size of the wirings on the entire surface of the substrate is made as uniform as possible. For this reason, dummy patterns having the same stacked structure are placed so that the sizes of the wirings are made uniform.

By forming an insulating film such as a SiO ₂ film in the manufacturing apparatus of this embodiment, an insulating film embedded between wirings with a very narrow width, which is not conventionally provided, can be provided. For example, further integration of ULSI An increase in density can be realized. In the second and third embodiments, the application examples to the gate electrode and the upper layer wiring are separately described. However, in the present invention, they are collectively referred to as a wiring. Moreover, in this invention, you may use for any one of the groove | channel of a board | substrate and the wiring above a board | substrate surface, and can also use it for both.

  In this example, an insulating film (for example, a silicon oxide film containing fluorine) is embedded in an STI trench using the manufacturing apparatus of this embodiment, which is the same as that of the conventional semiconductor device described above. It is an alternative to step 3 of the process flow.

  Prior to the STI formation, the STI trench 105 is formed by performing the same steps as those in Steps 1 and 2 (see FIGS. 1 and 2) in the process flow of the conventional semiconductor device. Therefore, the description of the overlapping steps 1 and 2 is omitted here.

When an insulating film is formed by the manufacturing apparatus of this embodiment, halogen may react with the underlying Si surface. In order to prevent this, a protective layer 201 is formed on the underlying surface, and then an insulating film is formed by the manufacturing apparatus of this embodiment. Here, a SiO ₂ film by a CVD method was deposited as the protective layer 201 (see FIG. 21). As the protective layer, an Al ₂ O ₃ film or a Si ₃ N ₄ film can be used. A silicon oxide film containing fluorine is deposited by the manufacturing apparatus of this embodiment, and STI is embedded halfway. At this time, the deposition of the silicon oxide film containing fluorine can be realized by using F ₂ gas as the halogen gas. Also in this case, the shape of the silicon oxide film containing fluorine is 401, and the silicon oxide film containing fluorine is formed preferentially from the bottom of the groove. Thereafter, annealing is performed in a nitrogen atmosphere at 1100 ° C. for 60 seconds using a rapid heating apparatus. Further, a SiO ₂ solid may be used as the member to be etched.

Subsequently, using the manufacturing apparatus of the present embodiment, the F ₂ gas is switched to the Cl ₂ gas, and a 3000 ＳｉＯ SiO ₂ film 402 is deposited. As a result, the STI is formed by the two-layer insulating film of the SiO ₂ film and the silicon oxide film containing fluorine (see FIG. 22).

Conventionally, the formation of STI causes a lattice distortion of Si, which changes the mobility of electrons and holes in Si, resulting in a change in transistor performance. Therefore, in this embodiment, a silicon oxide film containing fluorine is used as an insulating material for embedding STI. In this case, viscous flow of the silicon oxide film occurs by performing a high-temperature heat treatment. For this reason, distortion applied to surrounding Si can be reduced as compared with the case of embedding the SiO ₂ film. As a result, Si crystal lattice distortion generated by forming the STI can be reduced, and the performance variation of the transistor can be reduced.

Also, as shown in FIG. 10, after the formation of STI is completed, a 20-nm SiO ₂ film 109 is grown on the main surface of the silicon substrate 101 using a thermal oxidation method. The SiO ₂ film 109 is used as a gate oxide film, ensuring reliability and its thickness control is important. However, when fluorine is diffused outward from the embedded silicon oxide film during thermal oxidation, there is a problem that it is taken into the SiO ₂ film 109. By this phenomenon, the dielectric constant of the SiO ₂ film 109 is lowered, and the reliability (hot carrier resistance, etc.) is lowered. Therefore, in this example, a SiO ₂ film was deposited on a silicon oxide film containing fluorine as an insulating material for embedding STI. This SiO ₂ film suppresses the outward diffusion of fluorine, and the fluctuation of the dielectric constant and reliability of the SiO ₂ film 109 can be suppressed. That is, it is useful to have a multi-layer structure of various types of insulating films such as a two-layer insulating film.

Further, the silicon oxide film containing fluorine has a lower relative dielectric constant than the SiO ₂ film. The SiO ₂ film has a relative dielectric constant of 3.9 to 4.2, but the silicon oxide film containing fluorine can obtain 3.7 to 3.9. When the STI is provided to prevent electrical interference between the two transistors, the degree of electrical interference can be reduced when the relative dielectric constant of the insulating film used for embedding the STI is lower. In this example, a silicon oxide film containing fluorine was deposited as an insulating film having a low relative dielectric constant. However, using the manufacturing apparatus of this embodiment, a BN film, a SiOC film, C: Even if an F film or the like is embedded, the same effect is obtained.

Furthermore, fluorine that is present in the silicon oxide film and not bonded to Si migrates through the silicon oxide film by heat treatment during the wafer process, passes through the protective layer 201, and accumulates at the interface between the Si and SiO ₂ film. This induces peeling of the Si-SiO ₂ film interface. Therefore, in this example, the silicon oxide film containing fluorine was annealed at 1100 ° C. for 60 seconds in a nitrogen atmosphere, and fluorine that was not bonded to Si existing in the silicon oxide film system was diffused outwardly and reduced. . This prevented peeling of the Si—SiO ₂ film interface.

  In addition, in the manufacturing apparatus of this embodiment, since halogen gas is used, halogen is taken into the formed insulating film. Therefore, in this example, post-processing means is provided in the manufacturing apparatus of this embodiment, and annealing in rare gas plasma or hydrogen plasma is performed to remove halogen in the formed insulating film. Note that high-temperature and short-time annealing in an inert gas atmosphere as described above is also effective as a post-processing means.

  In this embodiment, the case where a low dielectric constant insulating film such as a fluorine-containing silicon oxide film is applied to STI filling has been described. However, the present invention is not limited to STI, and is also applied to filling between aluminum wirings and between gate electrodes. By applying an example, a low dielectric constant insulating film such as a fluorine-containing silicon oxide film may be formed.

In Examples 2 and 3, the SiO ₂ film was deposited by the manufacturing apparatus of this embodiment, and the space between the aluminum wiring and the gate electrode was buried. However, in some cases, a defect exists in the SiO ₂ film formed by the manufacturing apparatus of the present embodiment, and there may be a local portion where insulation between the aluminum wiring or the gate electrode cannot be maintained. Therefore, in this example, an oxidizing means is provided in the manufacturing apparatus of the present embodiment, and after the SiO ₂ film is deposited by the manufacturing apparatus of the present embodiment, defects in the SiO ₂ film are repaired in an oxygen or water vapor atmosphere. An oxidation treatment is performed. Note that oxygen plasma treatment or oxygen radical treatment may be performed instead of the oxidation means. By performing the oxidation treatment of this embodiment, the defect density in the SiO ₂ film can be reduced, and the defect rate of the semiconductor device can be reduced.

<Second Embodiment>
FIG. 23 is a schematic perspective structural view of another embodiment of a semiconductor device manufacturing apparatus according to the present invention. Examples 1 to 5 can also be implemented by the manufacturing apparatus of the present embodiment. In the following description, the same members as those in the manufacturing apparatus shown in FIG. 15 are denoted by the same reference numerals, and redundant description is omitted.

  In the present embodiment, between the member 20 to be etched and the ceiling plate 25 on the upper side wall of the chamber 1, a chlorine gas 18 (He, Ar, etc.) having a chlorine concentration of ≦ 50 vol. %, Preferably about 10% by volume) is connected. That is, in the manufacturing apparatus shown in FIG. 15, a mixed gas of chlorine gas and oxygen gas is supplied, whereas in the present embodiment, only chlorine gas is supplied from the nozzle 12.

  The nozzle 12 opens above the member to be etched 20 toward the center of the chamber 1, and a gas 18 is sent to the nozzle 12 via the flow rate controller 13. The nozzle 12 and the flow rate controller 13 constitute a halogen gas supply means.

  Furthermore, in this embodiment, an “external plasma generation chamber” is provided in which oxygen gas is converted into plasma outside the chamber 1 and supplied in advance. Hereinafter, the external plasma generation chamber will be described in detail.

  A slit-like opening 31 is formed in the lower side wall of the chamber 1 at substantially the same height as the substrate 3, and one end of a cylindrical passage 32 is fixed to the opening 31. A cylindrical excitation chamber 33 made of an insulator is provided in the middle of the passage 32, and a coiled plasma antenna 34 is provided around the excitation chamber 33. The plasma antenna 34 is connected to the matching unit 10 and the power source 11. Then, a high frequency current is supplied.

  A flow rate controller 37 is connected to the other end side of the passage 32, and oxygen gas 38 is supplied into the passage 32 via the flow rate controller 37. In the present embodiment, as the plasma generating means, in addition to the plasma antenna 27 for generating chlorine gas plasma, the plasma generating means including the passage 32, the excitation chamber 33, the plasma antenna 34, the matching unit 10 and the power source 11 is used. Since it is installed outside the chamber 1, it is called “external plasma generation chamber”.

  The supply amount of the oxygen gas 38 is relatively small, and the oxygen gas is about 0.1 to 10% by volume with respect to the total gas supply amount including the chlorine gas supplied from the nozzle 12.

  Since the generation of oxygen gas radicals in this embodiment is slightly different from that in the second embodiment, the following description is added.

  The oxygen gas 38 supplied into the passage 32 via the flow rate controller 37 is sent into the excitation chamber 33. Next, electromagnetic waves are incident on the inside of the excitation chamber 33 from the plasma antenna 34 to ionize the oxygen gas and generate a gas plasma 35 of the oxygen gas.

  Since a predetermined differential pressure is set between the pressure in the chamber 1 and the pressure in the excitation chamber 33 by the vacuum device 8, oxygen gas radicals in the gas plasma 35 in the excitation chamber 33 are transferred from the opening 31 to the substrate in the chamber 1. Sent to 3. The oxygen gas radicals act on silicon chloride adsorbed on the substrate 3, formed silicon, silicon chloride gas which is the precursor 15 flying on the substrate 3, and the like, thereby forming silicon oxide on the substrate 3.

As can be seen from the film formation reaction described above, the present embodiment does not require the oxygen gas radicals to act positively on the member 20 to be etched, and the main action of the oxygen gas radicals is silicon deposited on the substrate 3. Is oxidation. Therefore, in this embodiment, oxygen gas plasma is generated and supplied at a position where it can directly act on the substrate 3 separately from the chlorine gas plasma, so that efficient use of oxygen gas and SiO ₂ film formation can be achieved. It is possible.

  As a means for generating the gas plasma 35 in the excitation chamber 33, it is also possible to use a microwave, a laser, an electron beam, emitted light, or the like. Further, not only oxygen gas but also chlorine gas may be converted into plasma in the external plasma generation chamber. However, since chlorine gas plasma needs to act on the member 20 to be etched, an external plasma generation chamber for chlorine gas is installed at a position where this is possible.

In each of the above embodiments, the Cl ₂ gas diluted with He has been described as an example of the source gas. However, it is possible to use the Cl ₂ gas alone or to apply the HCl gas. is there. The source gas may be any gas containing chlorine, and a mixed gas of HCl gas and Cl ₂ gas can also be used. Furthermore, in general, not only chlorine but any halogen gas can be used as the raw material gas of the present invention. As the halogen, fluorine, bromine, iodine and the like can be applied.

  In addition to the forms shown in FIGS. 15 and 23, as the film forming apparatus, a plasma antenna is formed by a coil wound around the chamber 1 instead of the plasma antenna 27, and the ceiling plate 25 is used as an etching target member. A film forming apparatus formed of silicon may be used. In this case, the chamber 1 is made of, for example, ceramic, the gas supplied by electromagnetic waves generated from the periphery of the chamber is turned into plasma, and the silicon ceiling plate (member to be etched) is etched by the generated gas plasma.

  The present invention is applicable to all semiconductor devices.

It is a figure which shows the process flow (step 1) of the conventional semiconductor device. It is a figure which shows the process flow (step 2) of the conventional semiconductor device. It is a figure which shows the process flow (the middle of step 3) of the conventional semiconductor device. It is a figure which shows the process flow (step 3) of the conventional semiconductor device. It is a figure which shows the process flow (step 4) of the conventional semiconductor device. It is a figure which shows the process flow (step 5) of the conventional semiconductor device. It is a figure which shows the process flow (step 6) of the conventional semiconductor device. It is a figure which shows the process flow (step 7) of the conventional semiconductor device. It is a figure which shows the process flow (step 9) of the conventional semiconductor device. It is a figure which shows the process flow (step 10) of the conventional semiconductor device. It is a figure which shows the process flow (step 11) of the conventional semiconductor device. It is a figure which shows the process flow (step 12) of the conventional semiconductor device. It is a figure which shows the process flow (step 13) of the conventional semiconductor device. It is a figure which shows the process flow (step 14) of the conventional semiconductor device. 1 is a schematic perspective view showing an example of an embodiment of a semiconductor device manufacturing apparatus according to the present invention. It is a schematic plan view of the member to be etched used in the semiconductor device manufacturing apparatus according to the present invention. It is a figure which shows the process flow (the middle of Example 1) of the semiconductor device which concerns on this invention. It is a figure which shows the process flow (Example 1) of the semiconductor device which concerns on this invention. It is a figure which shows the process flow (Example 2) of the semiconductor device which concerns on this invention. It is a figure which shows the process flow (Example 3) of the semiconductor device which concerns on this invention. It is a figure which shows the process flow (middle of Example 4) of the semiconductor device which concerns on this invention. FIG. 9 is a diagram showing a process flow (Example 4) of the semiconductor device according to the invention. It is a schematic see-through | perspective structure figure which shows another example of embodiment of the manufacturing apparatus of the semiconductor device which concerns on this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Chamber 2 Support stand 3 Substrate 4 Heater 5 Refrigerant distribution means 6 Temperature control means 8 Vacuum apparatus 10 Matching device 11 Power supply 12 Nozzle 13 Flow rate controller 14 Gas plasma 15 Precursor 17 Exhaust port 18 Gas 20 Etched member 21 Protrusion 22 Ring portion 23 Notch portion 25 Ceiling plate 27 Plasma antenna 31 Opening portion 32 Passage 33 Excitation chamber 34 Plasma antenna 35 Gas plasma 37 Flow controller 38 Gas

Claims (43)

Supplying halogen gas and oxygen gas into the chamber in which the substrate is accommodated;
The halogen gas and oxygen gas are turned into plasma to generate halogen gas plasma and oxygen gas plasma,
Etching a member to be etched made of silicon with the halogen gas plasma to generate a precursor of the silicon and halogen,
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a silicon oxide film is formed on the substrate, and a groove between wirings formed on the substrate is embedded with the silicon oxide film. Halogen gas is supplied into the chamber in which the substrate is accommodated, and the halogen gas is turned into plasma to generate halogen gas plasma.
Etching a member to be etched made of silicon with the halogen gas plasma to generate a precursor of the silicon and halogen,
Generating oxygen gas plasma by converting oxygen gas into plasma outside the chamber, and supplying the oxygen gas plasma to the substrate;
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a silicon oxide film is formed on the substrate, and a groove between wirings formed on the substrate is embedded with the silicon oxide film. Supplying halogen gas and nitrogen gas into the chamber in which the substrate is housed;
The halogen gas and nitrogen gas are turned into plasma to generate halogen gas plasma and nitrogen gas plasma,
Etching a member to be etched made of boric acid with the halogen gas plasma to generate a precursor of boron and halogen,
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a boron nitride film is formed on the substrate, and a groove formed in the substrate is filled with the boron nitride film. Halogen gas is supplied into the chamber in which the substrate is accommodated, and the halogen gas is turned into plasma to generate halogen gas plasma.
Etching a member to be etched composed of boric acid with the halogen gas plasma generates a precursor of boric acid and halogen,
Generating nitrogen gas plasma by converting nitrogen gas into plasma outside the chamber, and supplying the nitrogen gas plasma to the substrate;
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a boron nitride film is formed on the substrate, and a groove formed in the substrate is filled with the boron nitride film. Supplying fluorine gas and oxygen gas into the chamber in which the substrate is accommodated;
The fluorine gas and oxygen gas are converted into plasma to generate fluorine gas plasma and oxygen gas plasma,
Etching a member to be etched made of silicon with the fluorine gas plasma to generate a precursor of the silicon and fluorine,
By making the temperature of the substrate lower than the temperature of the member to be etched,
A method of manufacturing a semiconductor device, wherein an insulating film made of a silicon fluorinated oxide film is formed on the substrate, and a groove formed in the substrate is filled with the silicon fluorinated oxide film. Fluorine gas is supplied into the chamber in which the substrate is accommodated, and the fluorine gas is converted into plasma to generate fluorine gas plasma.
Etching a member to be etched made of silicon with the fluorine gas plasma to generate a precursor of the silicon and fluorine,
Generating oxygen gas plasma by converting oxygen gas into plasma outside the chamber, and supplying the oxygen gas plasma to the substrate;
By making the temperature of the substrate lower than the temperature of the member to be etched,
A method of manufacturing a semiconductor device, wherein an insulating film made of a silicon fluorinated oxide film is formed on the substrate, and a groove formed in the substrate is filled with the silicon fluorinated oxide film. Supplying fluorine gas into the chamber in which the substrate is housed;
The fluorine gas is turned into plasma to generate fluorine gas plasma,
Etching a member to be etched made of silicon oxide with the fluorine gas plasma to generate a precursor of the silicon oxide and fluorine,
By making the temperature of the substrate lower than the temperature of the member to be etched,
A method of manufacturing a semiconductor device, wherein an insulating film made of a silicon fluorinated oxide film is formed on the substrate, and a groove formed in the substrate is filled with the silicon fluorinated oxide film. Supplying halogen gas and oxygen gas into the chamber in which the substrate is accommodated;
The halogen gas and oxygen gas are turned into plasma to generate halogen gas plasma and oxygen gas plasma,
Etching a member to be etched composed of silicon and another member to be etched composed of carbon with the halogen gas plasma allows the precursor of silicon and halogen and the other of carbon and halogen to be etched. Producing a precursor,
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a silicon carbide oxide film is formed on the substrate, and a groove formed in the substrate is filled with the silicon carbide oxide film. Halogen gas is supplied into the chamber in which the substrate is accommodated, and the halogen gas is turned into plasma to generate halogen gas plasma.
Etching a member to be etched composed of silicon and another member to be etched composed of carbon with the halogen gas plasma allows the precursor of silicon and halogen and the other of carbon and halogen to be etched. Producing a precursor,
Generating oxygen gas plasma by converting oxygen gas into plasma outside the chamber, and supplying the oxygen gas plasma to the substrate;
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a silicon carbide oxide film is formed on the substrate, and a groove formed in the substrate is filled with the silicon carbide oxide film. Supplying halogen gas into the chamber in which the substrate is housed;
The halogen gas is turned into plasma to generate halogen gas plasma,
Etching a member to be etched made of silicon oxide and another member to be etched made of carbon with the halogen gas plasma allows the precursor of the silicon oxide and the halogen, and the carbon and the halogen to With other precursors,
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a silicon carbide oxide film is formed on the substrate, and a groove formed in the substrate is filled with the silicon carbide oxide film. Supplying fluorine gas into the chamber in which the substrate is housed;
The fluorine gas is turned into plasma to generate fluorine gas plasma,
Etching a member to be etched made of carbon with the fluorine gas plasma to generate a precursor of the carbon and fluorine,
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a fluorocarbon film is formed on the substrate, and a groove formed in the substrate is filled with the fluorocarbon film. In the manufacturing method of the semiconductor device in any one of Claims 1 thru | or 11,
A method for manufacturing a semiconductor device, wherein after the insulating film is formed, the insulating film is subjected to a high-temperature and short-time heat treatment, a rare gas plasma treatment, or a hydrogen plasma treatment in an inert gas atmosphere. In the manufacturing method of the semiconductor device in any one of Claims 1 thru / or 12,
A method for manufacturing a semiconductor device, wherein after the insulating film is formed, the insulating film is subjected to an oxidation treatment in an oxygen or water vapor atmosphere, an oxygen plasma treatment, or an oxygen radical treatment. In the manufacturing method of the semiconductor device in any one of Claims 1 thru / or 13,
The method for manufacturing a semiconductor device according to claim 1, wherein the grooves formed in the substrate are arranged to have substantially the same size. In the manufacturing method of the semiconductor device in any one of Claims 1 thru / or 14,
A method for manufacturing a semiconductor device, comprising forming a protective layer made of Al ₂ O ₃ , SiO ₂ , or Si ₃ N ₄ before forming the insulating film. A portion of the bottom side of the groove formed in the substrate is embedded with an insulating film by the method for manufacturing a semiconductor device according to any one of claims 1 to 15,
After forming the insulating film, the trench is completely filled with another insulating film formed by high-density plasma CVD, SOD (Spin on Dielectric), plasma CVD, or thermal CVD. Device manufacturing method. In the manufacturing method of the semiconductor device in any one of Claims 3 thru / or 11,
The groove formed in the substrate is an element isolation groove, a groove between electrodes, or a groove between wirings. Supplying halogen gas and oxygen gas into the chamber in which the substrate is accommodated;
The halogen gas and oxygen gas are turned into plasma to generate halogen gas plasma and oxygen gas plasma,
Etching a member to be etched made of silicon with the halogen gas plasma to generate a precursor of the silicon and halogen,
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a silicon oxide film is formed on the substrate, and an element isolation groove formed on the substrate is embedded with the silicon oxide film,
After the silicon oxide film is formed, the silicon oxide film is subjected to a high-temperature and short-time heat treatment, a rare gas plasma treatment, or a hydrogen plasma treatment in an inert gas atmosphere. . Supplying halogen gas and oxygen gas into the chamber in which the substrate is accommodated;
The halogen gas and oxygen gas are turned into plasma to generate halogen gas plasma and oxygen gas plasma,
Etching a member to be etched made of silicon with the halogen gas plasma to generate a precursor of the silicon and halogen,
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a silicon oxide film is formed on the substrate, and an element isolation groove formed on the substrate is embedded with the silicon oxide film,
A method of manufacturing a semiconductor device, wherein after the silicon oxide film is formed, the silicon oxide film is subjected to an oxidation treatment in an oxygen or water vapor atmosphere, an oxygen plasma treatment, or an oxygen radical treatment. After forming the groove for element isolation on the substrate with the same size,
Supplying a halogen gas and an oxygen gas into the chamber containing the substrate;
The halogen gas and oxygen gas are turned into plasma to generate halogen gas plasma and oxygen gas plasma,
Etching a member to be etched made of silicon with the halogen gas plasma to generate a precursor of the silicon and halogen,
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a silicon oxide film is formed on the substrate, and the element isolation trench is filled with the silicon oxide film. After forming a protective layer made of Al ₂ O ₃ , SiO ₂ , or Si ₃ N ₄ in advance on a substrate on which a groove for element isolation is formed,
Supplying a halogen gas and an oxygen gas into the chamber containing the substrate;
The halogen gas and oxygen gas are turned into plasma to generate halogen gas plasma and oxygen gas plasma,
Etching a member to be etched made of silicon with the halogen gas plasma to generate a precursor of the silicon and halogen,
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a silicon oxide film is formed on the protective layer, and the element isolation trench is filled with the silicon oxide film. Supplying halogen gas and oxygen gas into the chamber in which the substrate is accommodated;
The halogen gas and oxygen gas are turned into plasma to generate halogen gas plasma and oxygen gas plasma,
Etching a member to be etched made of silicon with the halogen gas plasma to generate a precursor of the silicon and halogen,
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a silicon oxide film is formed on the substrate, and the silicon oxide film embeds a part on the bottom side of the element isolation groove formed on the substrate,
After the silicon oxide film is formed, the trench is completely filled with another insulating film formed by high density plasma CVD, SOD (Spin on Dielectric), plasma CVD, or thermal CVD. A method for manufacturing a semiconductor device. Halogen gas is supplied into the chamber in which the substrate is accommodated, and the halogen gas is turned into plasma to generate halogen gas plasma.
Etching a member to be etched made of silicon with the halogen gas plasma to generate a precursor of the silicon and halogen,
Generating oxygen gas plasma by converting oxygen gas into plasma outside the chamber, and supplying the oxygen gas plasma to the substrate;
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a silicon oxide film is formed on the substrate, and an element isolation groove formed on the substrate is embedded with the silicon oxide film,
After the silicon oxide film is formed, the silicon oxide film is subjected to a high-temperature and short-time heat treatment, a rare gas plasma treatment, or a hydrogen plasma treatment in an inert gas atmosphere. . Halogen gas is supplied into the chamber in which the substrate is accommodated, and the halogen gas is turned into plasma to generate halogen gas plasma.
Etching a member to be etched made of silicon with the halogen gas plasma to generate a precursor of the silicon and halogen,
Generating oxygen gas plasma by converting oxygen gas into plasma outside the chamber, and supplying the oxygen gas plasma to the substrate;
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a silicon oxide film is formed on the substrate, and an element isolation groove formed on the substrate is embedded with the silicon oxide film,
A method of manufacturing a semiconductor device, wherein after the silicon oxide film is formed, the silicon oxide film is subjected to an oxidation treatment in an oxygen or water vapor atmosphere, an oxygen plasma treatment, or an oxygen radical treatment. After forming the groove for element isolation on the substrate with the same size,
Halogen gas is supplied to the inside of the chamber containing the substrate, and the halogen gas is converted into plasma to generate halogen gas plasma.
Etching a member to be etched made of silicon with the halogen gas plasma to generate a precursor of the silicon and halogen,
Generating oxygen gas plasma by converting oxygen gas into plasma outside the chamber, and supplying the oxygen gas plasma to the substrate;
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a silicon oxide film is formed on the substrate, and the element isolation trench is filled with the silicon oxide film. After forming a protective layer made of Al ₂ O ₃ , SiO ₂ , or Si ₃ N ₄ in advance on a substrate on which a groove for element isolation is formed,
Halogen gas is supplied to the inside of the chamber containing the substrate, and the halogen gas is converted into plasma to generate halogen gas plasma.
Etching a member to be etched made of silicon with the halogen gas plasma to generate a precursor of the silicon and halogen,
Generating oxygen gas plasma by converting oxygen gas into plasma outside the chamber, and supplying the oxygen gas plasma to the substrate;
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a silicon oxide film is formed on the protective layer, and the element isolation trench is filled with the silicon oxide film. Halogen gas is supplied into the chamber in which the substrate is accommodated, and the halogen gas is turned into plasma to generate halogen gas plasma.
Etching a member to be etched made of silicon with the halogen gas plasma to generate a precursor of the silicon and halogen,
Generating oxygen gas plasma by converting oxygen gas into plasma outside the chamber, and supplying the oxygen gas plasma to the substrate;
By making the temperature of the substrate lower than the temperature of the member to be etched,
An insulating film made of a silicon oxide film is formed on the substrate, and the silicon oxide film embeds a part on the bottom side of the element isolation groove formed on the substrate,
After the silicon oxide film is formed, the trench is completely filled with another insulating film formed by high density plasma CVD, SOD (Spin on Dielectric), plasma CVD, or thermal CVD. A method for manufacturing a semiconductor device. A chamber containing a substrate;
A member to be etched composed of silicon provided at a position facing the substrate in the chamber;
Halogen gas supply means for supplying halogen gas into the chamber;
Raw material gas supply means for supplying oxygen gas into the chamber;
Plasma generating means for converting the halogen gas and oxygen gas into plasma to generate halogen gas plasma and oxygen gas plasma inside the chamber;
Temperature control means for lowering the temperature of the substrate lower than the temperature of the member to be etched,
Etching the member to be etched with the halogen gas plasma generates a precursor of the silicon and halogen, adsorbs the precursor to the substrate by the temperature control means, and adsorbs the precursor by the halogen gas plasma A precursor is reduced to silicon and oxidized by the oxygen gas plasma to form an insulating film made of a silicon oxide film on the substrate,
An apparatus for manufacturing a semiconductor device, wherein a groove between electrodes or a groove between wirings formed in the substrate is embedded with the silicon oxide film. A chamber containing a substrate;
A member to be etched composed of silicon provided at a position facing the substrate in the chamber;
Halogen gas supply means for supplying halogen gas into the chamber;
Plasma generating means for converting the halogen gas into plasma and generating halogen gas plasma inside the chamber;
An external plasma generation chamber communicating with the interior of the chamber;
Raw material gas supply means for supplying oxygen gas to the external plasma generation chamber;
Temperature control means for lowering the temperature of the substrate lower than the temperature of the member to be etched,
Etching the member to be etched with the halogen gas plasma generates a precursor of the silicon and halogen, adsorbs the precursor to the substrate by the temperature control means, and adsorbs the precursor by the halogen gas plasma The precursor is reduced to silicon and oxidized by oxygen gas plasma from the external plasma generation chamber to form an insulating film made of a silicon oxide film on the substrate,
An apparatus for manufacturing a semiconductor device, wherein a groove between electrodes or a groove between wirings formed in the substrate is embedded with the silicon oxide film. A chamber containing a substrate;
A member to be etched made of boric acid provided at a position facing the substrate in the chamber;
Halogen gas supply means for supplying halogen gas into the chamber;
Raw material gas supply means for supplying nitrogen gas into the chamber;
Plasma generating means for converting the halogen gas and nitrogen gas into plasma and generating halogen gas plasma and nitrogen gas plasma inside the chamber;
Temperature control means for lowering the temperature of the substrate lower than the temperature of the member to be etched,
Etching the member to be etched with the halogen gas plasma generates a precursor of the boric acid and halogen, adsorbs the precursor to the substrate by the temperature control means, and adsorbs the precursor by the halogen gas plasma. And reducing the precursor to boron and nitriding with the nitrogen gas plasma to form an insulating film made of a boron nitride film on the substrate,
A device for manufacturing a semiconductor device, wherein the boron nitride film fills a groove for element isolation, a groove between electrodes, or a groove between wirings formed in the substrate. A chamber containing a substrate;
A member to be etched made of boric acid provided at a position facing the substrate in the chamber;
Halogen gas supply means for supplying halogen gas into the chamber;
Plasma generating means for converting the halogen gas into plasma and generating halogen gas plasma inside the chamber;
An external plasma generation chamber communicating with the interior of the chamber;
Raw material gas supply means for supplying nitrogen gas to the external plasma generation chamber;
Temperature control means for lowering the temperature of the substrate lower than the temperature of the member to be etched,
Etching the member to be etched with the halogen gas plasma generates a precursor of the boric acid and halogen, adsorbs the precursor to the substrate by the temperature control means, and adsorbs the precursor by the halogen gas plasma. Reducing the precursor to boron and nitriding with nitrogen gas plasma from the external plasma generation chamber, forming an insulating film made of a boron nitride film on the substrate;
A device for manufacturing a semiconductor device, wherein the boron nitride film fills a groove for element isolation, a groove between electrodes, or a groove between wirings formed in the substrate. A chamber containing a substrate;
A member to be etched composed of silicon provided at a position facing the substrate in the chamber;
Halogen gas supply means for supplying fluorine gas into the chamber;
Raw material gas supply means for supplying oxygen gas into the chamber;
Plasma generating means for converting the fluorine gas and oxygen gas into plasma to generate fluorine gas plasma and oxygen gas plasma inside the chamber;
Temperature control means for lowering the temperature of the substrate lower than the temperature of the member to be etched,
By etching the member to be etched with the fluorine gas plasma, a precursor of the silicon and fluorine is generated, the precursor is adsorbed on the substrate by the temperature control means, and the adsorbed precursor is adsorbed to the oxygen Oxidized by gas plasma to form an insulating film made of a silicon fluoride oxide film on the substrate,
An apparatus for manufacturing a semiconductor device, characterized in that a groove for element isolation, a groove between electrodes, or a groove between wirings formed in the substrate is filled with the silicon fluorinated oxide film. A chamber containing a substrate;
A member to be etched composed of silicon provided at a position facing the substrate in the chamber;
Halogen gas supply means for supplying fluorine gas into the chamber;
Plasma generating means for converting the fluorine gas into plasma and generating fluorine gas plasma inside the chamber;
An external plasma generation chamber communicating with the interior of the chamber;
Raw material gas supply means for supplying oxygen gas to the external plasma generation chamber;
Temperature control means for lowering the temperature of the substrate lower than the temperature of the member to be etched,
Etching the member to be etched with the fluorine gas plasma generates a precursor of the silicon and fluorine, the precursor is adsorbed to the substrate by the temperature control means, and the adsorbed precursor is adsorbed to the external Oxidized by oxygen gas plasma from the plasma generation chamber, and an insulating film made of a silicon fluoride oxide film is formed on the substrate,
An apparatus for manufacturing a semiconductor device, characterized in that a groove for element isolation, a groove between electrodes, or a groove between wirings formed in the substrate is filled with the silicon fluorinated oxide film. A chamber containing a substrate;
A member to be etched made of silicon oxide provided at a position facing the substrate in the chamber;
Halogen gas supply means for supplying fluorine gas into the chamber;
Plasma generating means for converting the fluorine gas into plasma and generating fluorine gas plasma inside the chamber;
Temperature control means for lowering the temperature of the substrate lower than the temperature of the member to be etched,
Etching the member to be etched with the fluorine gas plasma generates a precursor of the silicon oxide and fluorine, the precursor is adsorbed to the substrate by the temperature control means, and the silicon fluorinated silicon oxide is deposited on the substrate. An insulating film made of a film is formed,
An apparatus for manufacturing a semiconductor device, characterized in that a groove for element isolation, a groove between electrodes, or a groove between wirings formed in the substrate is filled with the silicon fluorinated oxide film. A chamber containing a substrate;
An etched member made of silicon and another etched member made of carbon provided at a position facing the substrate in the chamber;
Halogen gas supply means for supplying halogen gas into the chamber;
Raw material gas supply means for supplying oxygen gas into the chamber;
Plasma generating means for converting the halogen gas and oxygen gas into plasma to generate halogen gas plasma and oxygen gas plasma inside the chamber;
Temperature control means for lowering the temperature of the substrate lower than the temperature of the member to be etched,
Etching the member to be etched with the halogen gas plasma generates the precursor of silicon and halogen and the other precursor of carbon and halogen, and the precursor is applied to the substrate by the temperature control means. Adsorbing, reducing the adsorbed precursor to silicon and carbon by the halogen gas plasma and oxidizing the oxygen gas plasma to form an insulating film made of a silicon carbide oxide film on the substrate,
A device for manufacturing a semiconductor device, wherein the silicon carbide oxide film embeds a groove for element isolation, a groove between electrodes, or a groove between wirings formed in the substrate. A chamber containing a substrate;
An etched member made of silicon and another etched member made of carbon provided at a position facing the substrate in the chamber;
Halogen gas supply means for supplying halogen gas into the chamber;
Plasma generating means for converting the halogen gas into plasma and generating halogen gas plasma inside the chamber;
An external plasma generation chamber communicating with the interior of the chamber;
Raw material gas supply means for supplying oxygen gas to the external plasma generation chamber;
Temperature control means for lowering the temperature of the substrate lower than the temperature of the member to be etched,
Etching the member to be etched with the halogen gas plasma generates the precursor of silicon and halogen and the other precursor of carbon and halogen, and the precursor is applied to the substrate by the temperature control means. Adsorbed, the adsorbed precursor is reduced to silicon and carbon by the halogen gas plasma, and oxidized by the oxygen gas plasma from the external plasma generation chamber to form an insulating film made of a silicon carbide oxide film on the substrate. Membrane
A device for manufacturing a semiconductor device, wherein the silicon carbide oxide film embeds a groove for element isolation, a groove between electrodes, or a groove between wirings formed in the substrate. A chamber containing a substrate;
A member to be etched composed of silicon oxide and another member to be etched composed of carbon provided in a position facing the substrate in the chamber;
Halogen gas supply means for supplying halogen gas into the chamber;
Plasma generating means for converting the halogen gas into plasma and generating halogen gas plasma inside the chamber;
Temperature control means for lowering the temperature of the substrate lower than the temperature of the member to be etched,
Etching the member to be etched with the halogen gas plasma generates a precursor of the silicon oxide and halogen and another precursor of the carbon and halogen, and the precursor is removed from the substrate by the temperature control means. Adsorbed onto the substrate, the adsorbed precursor is reduced to silicon oxide and carbon by the halogen gas plasma, and an insulating film made of a silicon carbide oxide film is formed on the substrate,
A device for manufacturing a semiconductor device, wherein the silicon carbide oxide film embeds a groove for element isolation, a groove between electrodes, or a groove between wirings formed in the substrate. A chamber containing a substrate;
A member to be etched made of carbon provided at a position facing the substrate in the chamber;
Halogen gas supply means for supplying fluorine gas into the chamber;
Plasma generating means for converting the fluorine gas into plasma and generating fluorine gas plasma inside the chamber;
Temperature control means for lowering the temperature of the substrate lower than the temperature of the member to be etched,
By etching the member to be etched with the fluorine gas plasma, a precursor of the carbon and fluorine is generated, the precursor is adsorbed to the substrate by the temperature control means, and a fluorocarbon film is formed on the substrate. An insulating film is formed,
An apparatus for manufacturing a semiconductor device, characterized in that a groove for element isolation, a groove between electrodes, or a groove between wirings formed in the substrate is filled with the fluorocarbon film. 40. The semiconductor device manufacturing apparatus according to claim 28, wherein:
A semiconductor comprising a post-processing means for performing a high-temperature and short-time heat treatment in an inert gas atmosphere, a rare gas plasma treatment, or a hydrogen plasma treatment after the formation of the insulating film. Equipment manufacturing equipment. 40. The semiconductor device manufacturing apparatus according to claim 28, wherein:
An apparatus for manufacturing a semiconductor device, characterized in that, after the insulating film is formed, an oxidizing means for performing an oxidation treatment in an oxygen or water vapor atmosphere, an oxygen plasma treatment, or an oxygen radical treatment on the insulation film is provided. . In the manufacturing apparatus of the semiconductor device according to any one of claims 28 to 40,
A device for manufacturing a semiconductor device, wherein the groove for separating elements, the groove between electrodes, or the groove between wirings formed on the substrate are aligned to the same size. Having a plurality of chambers in which substrates are accommodated;
One chamber includes the semiconductor device manufacturing apparatus according to any one of claims 28 to 41, and
In another chamber, another semiconductor device manufacturing apparatus for forming a protective layer of either Al ₂ O ₃ , SiO ₂ , or Si ₃ N ₄ is provided.
A protective layer made of Al ₂ O ₃ , SiO ₂ , or Si ₃ N ₄ is formed before the insulating film is formed by the semiconductor device manufacturing apparatus according to any one of claims 28 to 41. An apparatus for manufacturing a semiconductor device, comprising: Having a plurality of chambers in which substrates are accommodated;
The semiconductor device manufacturing apparatus according to any one of claims 28 to 42 is provided in one or a plurality of chambers,
In another chamber, there is provided another semiconductor device manufacturing apparatus in which another insulating film is formed by any one of a high-density plasma CVD method, a SOD (Spin on Dielectric) method, a plasma CVD method, or a thermal CVD method. ,
43. An insulating film formed by a semiconductor device manufacturing apparatus according to any one of claims 28 to 42, wherein a part of a bottom portion of an element isolation groove, a groove between electrodes, or a groove between wirings formed on a substrate is formed. As well as embedding
After forming the insulating film, the groove is completely filled with another insulating film by a high density plasma CVD method, a SOD (Spin on Dielectric) method, a plasma CVD method, or a thermal CVD method. A semiconductor device manufacturing apparatus.

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