JP2007053224A - Image sensors - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an image sensor which operates with high quality and at high speed and is inexpensive. <P>SOLUTION: The image sensor 1 includes: a glass substrate 10; a plurality of photoelectric conversion elements 20 each consisted of an organic material; a plurality of IC chips 30 each mounting thereon a drive circuit consisted of single crystal silicon; and wiring 40 for connecting the plurality of the photoelectric conversion elements 20 and the drive circuit mounted on each IC chip 30. The plurality of the photoelectric conversion elements 20 are integrated seamlessly so as to achieve a predetermined arrangement pitch over a predetermined sensor length. An arrangement pitch of a plurality of detection means provided on the drive circuits mounted on the IC chips 30 is less than that of the photoelectric conversion element. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an image sensor that extracts various information such as an object shape and an image as an electrical signal.

  2. Description of the Related Art Conventionally, as an image sensor in a facsimile, a scanner, or the like, a contact type linear sensor having a feature that it can be miniaturized as a set because an optical system is only a rod lens. This close contact type linear sensor has a sensor length that is the same size as that of the original, and is therefore configured by arranging a plurality of CMOS sensor chips and CCD sensor chips made of single crystal silicon.

In recent years, a technique that uses an organic material and can form a photoelectric conversion element by a simple method has been disclosed for a photoelectric conversion element used in an image sensor (see, for example, Patent Document 1).
Special Table 2002-502120

  However, in the above conventional technique, when a contact type linear sensor is configured by arranging a plurality of CMOS sensor chips and CCD sensor chips made of single crystal silicon, a predetermined sensor length is achieved while maintaining a predetermined pixel pitch. For this purpose, for example, in the case of a contact type linear sensor corresponding to the A3 size, a plurality of single crystal silicon chips corresponding to a length of about 300 mm are required, and these single crystal silicon chips are accurately aligned. There was a problem that had to be placed in.

  In particular, when the pixel pitch is 600 DPI or more (pixel pitch is about 40 μm), the photoelectric conversion element cannot be formed at the end portion of the chip described above, so that information on the portion corresponding to the joint between the chips cannot be read, and the read quality is high. There was also a problem of being bad. This problem cannot be solved as long as the photoelectric conversion element and the drive circuit for reading signal charges from the photoelectric conversion element are made of the same single crystal silicon.

  In order to solve this problem, as described in the above (Patent Document 1), when a photoelectric conversion element using an organic material is formed on a drive circuit formed on single crystal silicon, it is surely filled. Although the ratio (sensor area / pitch area) is improved, problems such as the need for single crystal silicon over the sensor length and the need to accurately place a plurality of chips occur. In principle, a single-crystal silicon driving chip having a length of 300 mm can be configured, but it is not realistic in view of the number and yield.

  Further, as described in the above (Patent Document 1), a photoelectric conversion element using an organic material is formed on a detection circuit constituted by a thin film field effect transistor TFT formed of polycrystalline silicon, and is a contact type. When a linear sensor is configured, the problem of joints between chips is eliminated, but the carrier mobility of polycrystalline silicon is one digit or more smaller than that of single crystal silicon. In order to adapt to high-speed operation, a plurality of read outputs by divided simultaneous operation are required. Therefore, the circuit configuration of the detection circuit is complicated, and there is a problem that the contact linear sensor cannot be provided at low cost.

  Furthermore, since the variation in threshold value and mobility is large, there is a problem in that the variation in readout output is large and a high-quality image cannot be obtained.

  SUMMARY OF THE INVENTION An object of the present invention is to provide an image sensor that can perform high-quality and high-speed operation and can reduce the price.

  In order to solve this problem, the image sensor of the present invention includes a photoelectric conversion layer that is an organic compound layer sandwiched between an anode and a cathode, and the photoelectric conversion layer photoelectrically converts incident light into a signal charge. And a driving circuit for reading out signal charges from the photoelectric conversion element, and the driving circuit is made of an inorganic semiconductor.

  In order to solve this problem, the image sensor of the present invention includes a photoelectric conversion layer that is an organic compound layer sandwiched between an anode and a cathode, and the photoelectric conversion layer photoelectrically converts incident light into a signal charge. A plurality of photoelectric conversion elements, a plurality of detection means provided corresponding to the plurality of photoelectric conversion elements and detecting signal charges from the corresponding photoelectric conversion elements, and a signal charge detected by the plurality of detection means A drive circuit including a plurality of readout means for sequentially reading, wherein the drive circuit is made of an inorganic semiconductor, and an array pitch of the plurality of detection means corresponding to the plurality of photoelectric conversion elements is the plurality of photoelectric conversions It is less than the arrangement pitch of the elements.

  In order to solve this problem, the image sensor of the present invention includes a photoelectric conversion layer that is an organic compound layer sandwiched between an anode and a cathode, and the photoelectric conversion layer photoelectrically converts incident light into a signal charge. A plurality of photoelectric conversion elements, a plurality of detection means provided corresponding to the plurality of photoelectric conversion elements and detecting signal charges from the corresponding photoelectric conversion elements, and a signal charge detected by the plurality of detection means A drive circuit including a plurality of reading means for sequentially reading, wherein the plurality of photoelectric conversion elements are seamlessly integrally formed at a predetermined arrangement pitch, and the drive circuit is composed of a plurality of drive circuits. The plurality of drive circuits are formed of an inorganic semiconductor.

  In order to solve this problem, the image sensor of the present invention includes a photoelectric conversion layer that is an organic compound layer sandwiched between an anode and a cathode, and the photoelectric conversion layer photoelectrically converts incident light into a signal charge. A plurality of photoelectric conversion elements, a plurality of detection means provided corresponding to the plurality of photoelectric conversion elements and detecting signal charges from the corresponding photoelectric conversion elements, and a signal charge detected by the plurality of detection means A plurality of readout means for sequentially reading out, and a drive circuit made of an inorganic semiconductor, wherein the plurality of photoelectric conversion elements are seamlessly integrally formed at a predetermined arrangement pitch, and the drive circuit Is constituted by a plurality of drive circuits, and the arrangement pitch of the plurality of detection means corresponding to the plurality of photoelectric conversion elements is equal to or less than the arrangement pitch of the plurality of photoelectric conversion elements.

  In a preferred embodiment of the present invention, the inorganic semiconductor is a silicon transistor.

  In a further preferred aspect of the present invention, the silicon transistor is composed of single crystal silicon.

  According to the present invention, since the photoelectric conversion element and the drive circuit are made of different materials, the arrangement pitch of the drive circuit can be shortened compared to the arrangement pitch of the photoelectric conversion elements. It is possible to produce a seamless photoelectric conversion element that achieves a predetermined arrangement pitch over the sensor length, and it is possible to realize a drive circuit that can operate at high speed and at low cost. High-quality and high-speed operation can be performed, and an effective effect that the cost can be reduced is obtained.

  According to the present invention, the plurality of photoelectric conversion elements and the drive circuit are made of different materials, and the arrangement pitch of the plurality of detection means provided in the drive circuit is equal to or less than the arrangement pitch of the plurality of photoelectric conversion elements. Therefore, the chip size (IC chip size) of the drive circuit composed of inorganic semiconductor can be made shorter than the predetermined sensor length, and the predetermined arrangement pitch is achieved over the predetermined sensor length. Thus, it is possible to produce a plurality of seamless photoelectric conversion elements, so that it is possible to obtain a high-quality and high-speed operation, and to obtain an effective effect that the cost can be reduced.

  Furthermore, according to the present invention, the plurality of photoelectric conversion elements and the plurality of drive circuits are made of different materials, and the plurality of photoelectric conversion elements are seamlessly molded integrally at a predetermined arrangement pitch. The arrangement pitch of a plurality of drive circuits can be shortened compared to the arrangement pitch of a plurality of seamless photoelectric conversion elements that have achieved a predetermined arrangement pitch over a predetermined sensor length. The overall chip size (IC chip size) of a plurality of drive circuits composed of the above can be made shorter than a predetermined sensor length, high-quality and high-speed operation can be performed, and cost reduction is achieved. An effective effect is obtained.

  Furthermore, according to the present invention, the plurality of photoelectric conversion elements and the plurality of drive circuits are made of different materials and seamlessly molded at a predetermined arrangement pitch, and the plurality of photoelectric conversion elements Seamless photoelectric conversion element that achieves a predetermined arrangement pitch over a predetermined sensor length by using a plurality of drive circuits in which the arrangement pitch of a plurality of corresponding detection means is equal to or less than the arrangement pitch of the plurality of photoelectric conversion elements In addition, it is possible to realize a drive circuit that can operate at high speed and at low cost, thereby achieving an effective effect of being able to perform high-quality and high-speed operation and to reduce the price. It is done.

  The invention according to claim 1 of the present invention includes a photoelectric conversion layer that is an organic compound layer sandwiched between an anode and a cathode, and the photoelectric conversion layer photoelectrically converts incident light into a signal charge. Element and a drive circuit that reads signal charges from the photoelectric conversion element, and the drive circuit is an image sensor made of an inorganic semiconductor, and the photoelectric conversion element and the drive circuit are made of different materials, The arrangement pitch of the drive circuit can be shortened as compared with the arrangement pitch of the photoelectric conversion elements. Therefore, it is possible to produce a seamless photoelectric conversion element that achieves a predetermined arrangement pitch over a predetermined sensor length. This makes it possible to realize a drive circuit that can operate at high speed and at a low price, thereby enabling high-quality and high-speed operation and lowering the price. It has the effect that kill.

  The invention according to claim 2 of the present invention includes a photoelectric conversion layer that is an organic compound layer sandwiched between an anode and a cathode, and the photoelectric conversion layer includes a plurality of photoelectric conversion layers that convert incident light into signal charges. A plurality of photoelectric conversion elements, a plurality of detection means provided corresponding to the plurality of photoelectric conversion elements to detect signal charges from the corresponding photoelectric conversion elements, and a plurality of signal charges sequentially read out by the plurality of detection means An image in which the drive circuit is made of an inorganic semiconductor, and the arrangement pitch of the plurality of detection means corresponding to the plurality of photoelectric conversion elements is equal to or less than the arrangement pitch of the plurality of photoelectric conversion elements. The sensor is composed of different materials from the plurality of photoelectric conversion elements and the drive circuit, and the arrangement pitch of the plurality of detection means provided in the drive circuit is equal to or less than the arrangement pitch of the plurality of photoelectric conversion elements. Therefore, the chip size (IC chip size) of the drive circuit made of inorganic semiconductor can be made shorter than the predetermined sensor length, and the seamless arrangement has achieved a predetermined arrangement pitch over the predetermined sensor length. Since a plurality of photoelectric conversion elements can be manufactured, high-quality and high-speed operation can be performed, and the cost can be reduced.

  The invention according to claim 3 of the present invention includes a photoelectric conversion layer that is an organic compound layer sandwiched between an anode and a cathode, and the photoelectric conversion layer includes a plurality of photoelectric conversion layers that convert incident light into signal charges. A plurality of photoelectric conversion elements, a plurality of detection means provided corresponding to the plurality of photoelectric conversion elements to detect signal charges from the corresponding photoelectric conversion elements, and a plurality of signal charges sequentially read out by the plurality of detection means A plurality of photoelectric conversion elements that are seamlessly molded at a predetermined arrangement pitch, and the drive circuit includes a plurality of drive circuits, and the plurality of drive circuits. Is an image sensor composed of an inorganic semiconductor, and a plurality of photoelectric conversion elements and a plurality of drive circuits are composed of different materials, and the plurality of photoelectric conversion elements are seamlessly molded at a predetermined arrangement pitch. Therefore, it is possible to shorten the arrangement pitch of the plurality of drive circuits compared to the arrangement pitch of the plurality of seamless photoelectric conversion elements that have achieved the predetermined arrangement pitch over a predetermined sensor length. Therefore, it becomes possible to make the entire chip size (IC chip size) of a plurality of drive circuits composed of inorganic semiconductors shorter than a predetermined sensor length, and to perform high-quality and high-speed operation. The effect is that the price can be reduced.

  The invention according to claim 4 of the present invention includes a photoelectric conversion layer that is an organic compound layer sandwiched between an anode and a cathode, and the photoelectric conversion layer includes a plurality of photoelectric conversion layers that convert incident light into signal charges. A plurality of photoelectric conversion elements, a plurality of detection means provided corresponding to the plurality of photoelectric conversion elements to detect signal charges from the corresponding photoelectric conversion elements, and a plurality of signal charges sequentially read out by the plurality of detection means A plurality of photoelectric conversion elements that are seamlessly molded at a predetermined arrangement pitch, and the drive circuit includes a plurality of drive circuits. An image sensor in which the arrangement pitch of the plurality of detection means corresponding to the plurality of photoelectric conversion elements is equal to or less than the arrangement pitch of the plurality of photoelectric conversion elements, and the plurality of photoelectric conversion elements and the plurality of drive circuits are Different A plurality of photoelectric conversion elements that are seamlessly molded at a predetermined arrangement pitch and a plurality of detection means corresponding to the plurality of photoelectric conversion elements are less than or equal to the arrangement pitch of the plurality of photoelectric conversion elements. By using a plurality of drive circuits, it is possible to realize a seamless photoelectric conversion element that achieves a predetermined arrangement pitch over a predetermined sensor length and a drive circuit that can operate at high speed and that is low in price. As a result, it is possible to perform a high-quality and high-speed operation and to achieve a cost reduction.

  The invention according to claim 5 of the present invention is the image sensor according to any one of claims 1 to 4, wherein the inorganic semiconductor is an image sensor that is a silicon transistor, and the drive circuit is configured by a silicon transistor. Therefore, when a silicon transistor is formed using single crystal silicon, the carrier mobility of the single crystal silicon is sufficiently large, so that the silicon transistor, that is, the drive circuit can be operated at high speed, and high quality and high speed are achieved. There is an effect that the operation can be performed and the cost can be reduced.

  According to a sixth aspect of the present invention, in the fifth aspect of the present invention, the silicon transistor is an image sensor composed of single crystal silicon, and the drive circuit is composed of a silicon transistor formed of single crystal silicon. Therefore, since the carrier mobility of single crystal silicon is sufficiently large, the silicon transistor, that is, the driving circuit can operate at high speed, and can operate at high quality and at high speed, and the cost can be reduced. Has the effect of being able to.

  Hereinafter, the best mode for carrying out the present invention will be described more specifically with reference to the drawings. Here, in the accompanying drawings, the same reference numerals are given to the same members, and duplicate descriptions are omitted. In addition, since description here is the best form by which this invention is implemented, this invention is not limited to the said form.

(Embodiment 1)
FIG. 1 is a block diagram showing a schematic configuration of an image sensor according to Embodiment 1 of the present invention, FIG. 2 is a cross-sectional view showing a cross section of a photoelectric conversion element according to Embodiment 1, and FIG. It is a block diagram which shows the structure of the photoelectric conversion element for 1 pixel in this image sensor, and a drive circuit.

  As shown in FIG. 1, the image sensor 1 includes a glass substrate 10 as a substrate, photoelectric conversion elements (a plurality of photoelectric conversion elements) 20 made of an organic material, and a plurality of drive circuits made of single crystal silicon. The IC chip 30, the photoelectric conversion element 20, and a wiring 40 that connects the driving circuit mounted on each IC chip 30 are provided. Here, the case where the image sensor 1 is a linear sensor will be described.

  In the first embodiment, the photoelectric conversion elements (a plurality of photoelectric conversion elements) 20 are arranged with a predetermined size length and a predetermined pitch (predetermined arrangement pitch). The IC chips 30 are arranged in a size shorter than the predetermined size length even when all the IC chips 30 are arranged in a line. Accordingly, the plurality of wirings 40 that connect the plurality of photoelectric conversion elements 20 and the respective IC chips 30 are not parallel to each other.

  As shown in FIG. 2, the photoelectric conversion element 20 includes an ITO (iridium-tin oxide) anode 21 as a first electrode, an electron-donating layer made of an electron-donating material, and an electron-accepting material made of an electron-accepting material. The organic photoelectric conversion layer 22 which is an organic compound layer comprised by the layer, and the aluminum cathode 23 as a 2nd electrode are provided.

  Next, the manufacturing method of a photoelectric conversion element is demonstrated.

  First, an ITO film having a film thickness of 150 nm is formed on the glass substrate 10 by a sputtering method, and a resist material (manufactured by Tokyo Ohka Kogyo Co., Ltd., OFPR-800) is applied to the upper part of the ITO film by a spin coating method to have a thickness of 5 μm. A resist film was formed. Then, masking, exposure, and development were performed, and the resist was patterned into the shape of the ITO anode 21 and its wiring.

  Thereafter, the glass substrate 10 is immersed in a hydrochloric acid aqueous solution at a temperature of 60 ° C. and 18 N, and the ITO film in a portion where the resist film is not formed is etched, washed with water, and finally the resist film is removed, An anode (ITO anode 21) and a wiring 40 made of a patterned ITO film were formed.

  Next, this glass substrate 10 was subjected to ultrasonic cleaning for 5 minutes with a detergent (Semico Clean, manufactured by Furuuchi Chemical Co., Ltd.), ultrasonic cleaning for 10 minutes with pure water, and aqueous solution of hydrogen peroxide against ammonia water (volume ratio). After cleaning in the order of ultrasonic cleaning for 5 minutes with a solution mixed at a ratio of 5 to 1 for water and ultrasonic cleaning for 5 minutes with pure water at a temperature of 70 ° C., the glass substrate 10 is cleaned with a nitrogen blower. The water adhering to was removed and further heated at a temperature of 250 ° C. for drying.

  Subsequently, poly (3,4) ethylenedioxythiophene / polystyrene sulphonate (PEDT / PSS) is dropped on the glass substrate 10 on which the ITO anode 21 is formed through a 0.45 μm filter, and spin coating is performed. Was applied uniformly. This was heated in a clean oven at a temperature of 200 ° C. for 10 minutes to form a charge transport layer having a thickness of 60 nm.

Furthermore, the glass substrate 10 thus formed with the charge transport layer is placed in a resistance heating vapor deposition apparatus, and in this resistance heating vapor deposition apparatus, a vacuum degree of 0.27 mPa (= 2 × 10 ⁻⁶ Torr) or less is obtained. Molybdenum oxide was evaporated under reduced pressure until a 5 nm buffer layer was formed.

  Then, poly (2-methoxy-5- (2′-ethylhexyloxy) -1,4-phenylenevinylene) (hereinafter referred to as MEH-) that functions as an electron-donating organic material with respect to the glass substrate 10 on which the buffer layer is formed. And a [5,6] -phenyl C61 butyric acid methyl ester (hereinafter referred to as [5,6] -PCBM) functioning as an electron-accepting material in a weight ratio of 1: 4. After spin coating, heat treatment was performed in a clean oven at a temperature of 100 ° C. for 30 minutes to form an organic photoelectric conversion layer 22 having a thickness of about 100 nm.

  Note that MEH-PPV is a P-type organic semiconductor, while [5,6] -PCBM is an n-type organic semiconductor. Exciton electrons generated by light absorption diffuse into the conduction band and donate to [5,6] -PCBM, and holes diffuse into the valence band and donate to MEH-PPV. These are conducted to the aluminum cathode 23 and the ITO anode 21.

  This [5,6] -PCBM is a modified fullerene, has a very high electron mobility, and a mixture with MEH-PPV which is an electron donating material can be used. Separation and conveyance of a pair with a hole can be performed efficiently. Thereby, there is an advantage that the photoelectric efficiency of the organic photoelectric conversion layer 22 can be increased, and the photoelectric conversion element 20, that is, the image sensor 1 can be manufactured at low cost.

Finally, in a resistance heating vapor deposition apparatus depressurized to a vacuum of 0.27 mPa (= 2 × 10 ⁻⁶ Torr) or less, lithium fluoride (LiF) is formed to a thickness of about 1 nm on the organic photoelectric conversion layer 22. Then, aluminum was formed to a thickness of about 10 nm to form an aluminum cathode 23. In this way, photoelectric conversion elements having a predetermined sensor length and a predetermined resolution can be manufactured seamlessly and inexpensively on a glass substrate.

  Next, the operation of the image sensor configured as described above will be described with reference to FIG. FIG. 3 is a configuration diagram showing the configuration of the photoelectric conversion element and the drive circuit for one pixel of the amplification type image sensor.

  In the photoelectric conversion element 20 made of an organic material, incident light is photoelectrically converted into signal charges, and the signal charges are accumulated.

  The potential Vs due to the accumulated signal charge is applied to the gate G2 of the amplifying transistor (detecting means) M2 via the wiring 40. The amplifying transistor (detection means) M2 detects the output of the signal charge based on the potential Vs applied to the gate G2.

  Regarding the reading of the signal (signal charge), it is read as the current Is through the switching transistor (reading means) M3 by controlling the selection signal input to the gate G3 of the switching transistor (reading means) M3. That is, the switching transistor M3 is turned on when the selection signal indicating that the signal charge is to be read from the corresponding photoelectric conversion element is input to the gate G3 of the switching transistor M3. Read out.

  The sensor potential Vs is reset to the reset voltage Vr by the control of the reset signal input to the gate G1 of the reset transistor M1 and the reset transistor M1. The sensor accumulation time is determined by this reset operation.

  The above-described signal charge read operation and sensor potential Vs reset operation are timing-controlled by a shift register (not shown) or the like.

  By the way, when the drive circuit (detection circuit) for one pixel in the amplification type image sensor having the above-described configuration is mounted on a 0.35 μm CMOS process which is not the latest at present, the arrangement pitch of the detection circuits per one pixel is set. It can be easily configured to be 40 μm or less. Accordingly, when a contact image sensor (amplification image sensor) compatible with a resolution of 600 DPI is configured, the arrangement pitch of each detection circuit is sufficiently larger than the arrangement pitch of the photoelectric conversion elements 20 made of an organic material. Can be shortened.

  Thus, since the arrangement pitch of the detection circuits can be made shorter than the arrangement pitch of the photoelectric conversion elements 20, according to the first embodiment, the photoelectric conversion elements and the drive circuits are the same process in the prior art. In the case of an integrated configuration, the single crystal silicon size length determined based on the arrangement pitch of the photoelectric conversion elements and the sensor length of the image sensor can be extremely shortened.

  Therefore, the image sensor according to the first embodiment can be manufactured at a significantly lower cost than conventional contact image sensors in terms of the number of detection circuits and the yield. In addition, since the drive circuit is made of single crystal silicon, its carrier mobility is sufficiently high, so that high-speed operation is possible.

  In the first embodiment, the configuration in which the detection circuits are arranged in a row has been described. However, from the viewpoint of the number of detection circuits and the yield, the detection circuits are arranged in a plurality of rows and the width direction increases but the length direction increases. It is good also as a structure which shortened.

  Next, mounting of a driving circuit mounted on the IC chip will be described.

  In the case of A3 size and 600 DPI support, about 7500 pixels are required, and 30 single-crystal silicon chips with 250 inputs per chip will be placed, but gold bumps are attached to the bare chip IC and no wire connection is made Thus, a mounting method in which the glass substrate is directly bonded can be used.

  In this way, although the drive circuit is divided into a plurality of parts (though composed of a plurality of drive circuits), the photoelectric conversion elements are seamless, so that information between chips (CMOS sensor chip, CCD sensor chip) is not obtained as in the prior art. There is no problem of being unable to read.

  As described above, by configuring the photoelectric conversion element with an organic material, a photoelectric conversion element having a predetermined sensor length and a predetermined resolution can be seamlessly manufactured by an inexpensive manufacturing process. In addition, when the driving circuit that detects and reads out signal charges from the photoelectric conversion element is made of single crystal silicon, the driving circuit can be reduced to a chip size that is equal to or smaller than a predetermined sensor length. Thereby, an image sensor capable of high-speed operation can be realized at low cost.

  Note that in this first embodiment, a thin film with high uniformity and smoothness is manufactured as a method for manufacturing a photoelectric conversion element, that is, a photoelectric conversion element formed of an organic material (hereinafter referred to as an organic photoelectric conversion element). Any method may be used as long as it can be stably formed, for example, various vacuum processes such as vacuum deposition and sputtering, and wet processes such as spin coating, dipping, and inkjet The manufacturing method can be used.

  However, in order to take advantage of the cost reduction that is one of the features of the organic photoelectric conversion element, it is possible to arbitrarily select the material, configuration, etc. to be used from these manufacturing methods. Preferably, the organic layer is formed by a wet process that does not require a large-scale manufacturing apparatus.

  In the first embodiment, the case where the image sensor is applied to a linear sensor has been described. However, the present invention is not limited to this and may be applied to an area sensor. In this case, the signal may be read out as an XY address type using two switching transistors.

  Furthermore, in the first embodiment, glass (glass substrate) is used as the substrate. However, the present invention is not limited to this, and the substrate is composed of the first electrode (for example, ITO anode), organic photoelectric conversion. Any material can be used as long as it can support the layer and the second electrode (for example, an aluminum cathode).

  As the substrate, for example, polyethylene terephthalate, polycarbonate, polymethyl methacrylate, polyether sulfone, polyvinyl fluoride, polypropylene, polyethylene, polyacrylate, amorphous polyolefin, fluorine-based resin, and other polymer materials, as well as silicon wafers are used. Various metal materials including the above can be used.

  In this Embodiment 1, as an electron-donating material which is a constituent material of the organic photoelectric conversion layer (organic compound layer) 22, phenylene vinylene and its derivatives, fluorene and its derivatives, particularly a skeleton having a quinoline group or a pyridine group Fluorene-based copolymer (P0F66, P1F66, PFPV), fluorene-containing arylamine polymer, carbazole and derivatives thereof, indole and derivatives thereof, pyrene and derivatives thereof, pyrrole and derivatives thereof, picoline and derivatives thereof, thiophene and derivatives thereof, acetylene and derivatives thereof A polymer having a derivative, diacetylene and a derivative thereof as a repeating unit, a copolymer with another monomer, and a group of polymer materials collectively referred to as a dendrimer are used.

  Moreover, it is not limited to a polymer, for example, porphyrin compounds such as porphine, tetraphenylporphine copper, phthalocyanine, copper phthalocyanine, titanium phthalocyanine oxide, and “1,1-bis {4- (di-P-tolylamino) ) Phenyl} cyclohexane "," 4,4 ', 4 "-trimethyltriphenylamine", "N, N, N', N'-tetrakis (P-tolyl) -P-phenylenediamine", "1- ( N, N-di-P-tolylamino) naphthalene ”,“ 4,4′-bis (dimethylamino) -2-2′-dimethyltriphenylmethane ”,“ N, N, N ′, N′-tetraphenyl- ” 4,4′-diaminobiphenyl ”,“ N, N′-diphenyl-N ”,“ N′-di-m-tolyl-4 ”,“ 4′-diaminobiphenyl ”, -Aromatic tertiary amines such as phenylcarbazole, "4-di-P-tolylaminostilbene", "4- (di-P-tolylamino) -4 '-[4- (di-P- Stilbene compounds such as “tolylamino) styryl] stilbene”, triazole and its derivatives, oxazizazole and its derivatives, imidazole and its derivatives, polyarylalkane and its derivatives, pyrazoline and its derivatives, pyrazolone and its derivatives, phenylenediamine and its derivatives, Annealing amine and its derivatives, amino-substituted chalcone and its derivatives, oxazole and its derivatives, styrylanthracene and its derivatives, fluorenone and its derivatives, hydrazone and its derivatives, silazane and its derivatives, polysilane-based anion Emissions-based copolymer, molecular oligomers, styrylamine compounds, aromatic dimethylidine compounds, poly 3-methylthiophene and the like can also be used.

  Moreover, as an electron-accepting material which is a constituent material of the organic photoelectric conversion layer (organic compound layer) 22, "1,3-bis (4-tert-butylphenyl-1,3,4-oxadiazolyl) phenylene (OXD-7) is used. Oxadiazole and its derivatives, anthraquinodimethane and its derivatives, diphenylquinone and its derivatives, fullerene and its derivatives, in particular PCBM ([6,6] -phenyl C61 butyric acid methyl ester) carbon nanotubes and its Derivatives and the like are used.

The transparent electrode used as the first electrode provided under the organic photoelectric conversion layer 22 (substrate side) includes the above-mentioned ITO (iridium-tin oxide), ATO (Sb-doped SnO ₂ ), and AZO (Al. Doped ZnO) or the like is used. Furthermore, by forming the transparent electrode with a light-transmitting material such as a metal thin film of Al, Ag, Au, etc., it becomes possible to impart light transparency to the transparent electrode. Thereby, a light-transmitting light-receiving part can also be provided.

  For the second electrode provided on the organic photoelectric conversion layer 22, a metal material such as Al, Ag, or Au is usually used. The second electrode includes a metal such as Al, Ag, Au, Cr, Cu, In, Mg, Ni, Si, and Ti, a Mg alloy such as a Mg—Ag alloy and a Mg—In alloy, Al A thin film made of Al alloy such as -Li alloy, Al-Sr alloy, Al-Ba alloy or the like is used. Furthermore, in order to improve the short circuit current, a method of introducing a thin film of metal oxide, metal fluoride or the like between the organic layer and the cathode is also preferably used. Furthermore, ITO, ATO, AZO, etc. can be used.

  Furthermore, in the first embodiment, a polymer material such as PEDOT: PSS (a mixture of polythiophene and polystyrene sulfonic acid) is provided between the first electrode or the second electrode and the organic photoelectric conversion layer as necessary. A configuration of a photoelectric conversion element introduced as a buffer layer or a configuration of a photoelectric conversion element in which an inorganic substance such as silicon, titania, alumina, carbon, zirconia or the like is introduced as a block layer for a mole current is also preferably used.

  If necessary, a metal fluoride or oxide such as lithium fluoride (LiF) is provided between the organic photoelectric conversion layer and the second or third electrode formed thereon as a buffer layer. The structure of the photoelectric conversion element introduced as is also suitably used.

  As described above, according to the first embodiment, the photoelectric conversion element (a plurality of photoelectric conversion elements) is formed of an organic material that can be manufactured by an inexpensive manufacturing process, and the drive circuit is formed of single crystal silicon. Furthermore, since the arrangement pitch of the detection means of the drive circuit is configured to be shorter than the arrangement pitch of the plurality of photoelectric conversion elements, the seamless photoelectric conversion element that achieves the predetermined arrangement pitch over a predetermined sensor length An inexpensive driving circuit capable of operating at a high speed (a plurality of photoelectric conversion elements) can be realized.

  Therefore, an image sensor capable of achieving a predetermined pixel pitch over a predetermined sensor length and capable of operating at high speed can be realized at low cost.

  The present invention can be applied to image sensors used in scanners, fax machines, and the like that extract various information such as object shapes and images as electrical signals.

1 is a configuration diagram showing a schematic configuration of an image sensor that is Embodiment 1 of the present invention. Sectional drawing which shows the cross section of the photoelectric conversion element which concerns on Embodiment 1 of this invention 1 is a configuration diagram showing a configuration of a photoelectric conversion element and a drive circuit for one pixel in an image sensor according to Embodiment 1 of the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Image sensor 10 Glass substrate 20 Photoelectric conversion element 21 ITO anode 22 Organic photoelectric conversion layer (organic compound layer)
23 Aluminum cathode 30 IC chip

Claims (6)

A photoelectric conversion layer comprising a photoelectric conversion layer that is an organic compound layer sandwiched between an anode and a cathode, and the photoelectric conversion layer photoelectrically converts incident light into a signal charge;
A drive circuit for reading out signal charges from the photoelectric conversion elements;
Have
The image sensor, wherein the drive circuit is made of an inorganic semiconductor. A plurality of photoelectric conversion elements comprising a photoelectric conversion layer that is an organic compound layer sandwiched between an anode and a cathode, and the photoelectric conversion layer photoelectrically converts incident light into a signal charge;
A plurality of detection means provided corresponding to the plurality of photoelectric conversion elements and detecting signal charges from the corresponding photoelectric conversion elements; and a plurality of reading means for sequentially reading the signal charges detected by the plurality of detection means. Including a driving circuit;
Have
The drive circuit is composed of an inorganic semiconductor,
An image sensor, wherein an arrangement pitch of the plurality of detection units corresponding to the plurality of photoelectric conversion elements is equal to or less than an arrangement pitch of the plurality of photoelectric conversion elements. A plurality of photoelectric conversion elements comprising a photoelectric conversion layer that is an organic compound layer sandwiched between an anode and a cathode, and the photoelectric conversion layer photoelectrically converts incident light into a signal charge;
A plurality of detection means provided corresponding to the plurality of photoelectric conversion elements and detecting signal charges from the corresponding photoelectric conversion elements; and a plurality of reading means for sequentially reading the signal charges detected by the plurality of detection means. Including a driving circuit;
Have
The plurality of photoelectric conversion elements are seamlessly integrated with a predetermined arrangement pitch,
The image sensor according to claim 1, wherein the drive circuit includes a plurality of drive circuits, and the plurality of drive circuits include an inorganic semiconductor. A plurality of photoelectric conversion elements comprising a photoelectric conversion layer that is an organic compound layer sandwiched between an anode and a cathode, and the photoelectric conversion layer photoelectrically converts incident light into a signal charge;
A plurality of detection means provided corresponding to the plurality of photoelectric conversion elements and detecting signal charges from the corresponding photoelectric conversion elements; and a plurality of reading means for sequentially reading the signal charges detected by the plurality of detection means. Including a drive circuit composed of an inorganic semiconductor;
Have
The plurality of photoelectric conversion elements are:
It is a seamless integral molding with a predetermined arrangement pitch,
The drive circuit is
An image sensor comprising: a plurality of drive circuits; and an arrangement pitch of the plurality of detection means corresponding to the plurality of photoelectric conversion elements is equal to or less than an arrangement pitch of the plurality of photoelectric conversion elements. The image sensor according to claim 1, wherein the inorganic semiconductor is a silicon transistor. 6. The image sensor according to claim 5, wherein the silicon transistor is made of single crystal silicon.

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