JP2007053164A - Polishing apparatus and polishing head - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a polishing apparatus capable of preventing unneeded moment from being generated in a chuck and a retainer in polishing work and improving polishing precision to a disc-like workpiece for the polishing apparatus, which has the polishing head that has the chuck and the retainer supported so that they can move vertically freely and can be rocked freely to the head body, a chuck pressurizing means for pressurizing the chuck over the entire surface from an upper part, and a retainer pressurizing means for pressurizing the retainer over the entire surface from an upper part, and to provide the polishing head. <P>SOLUTION: The polishing apparatus has the polishing head that supports the chuck independently of the retainer through a chuck support mechanism against the head body and supports the retainer independently of the chuck through a retainer support mechanism against the head body. The polishing head supports the chuck independently of the retainer through the chuck support mechanism against the head body, and supports the retainer independently of the chuck through the retainer support mechanism against the head body. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

    The present invention relates to a structure of a polishing apparatus for polishing the surface of a disk-shaped workpiece such as a semiconductor wafer, and a structure of a polishing head that is a component of the polishing apparatus.

    As shown in FIGS. 10 and 11, a conventional polishing apparatus A that works on a semiconductor wafer includes a table T on which a disk-shaped surface plate S is installed, and a polishing head H positioned above the surface plate S. The surface plate S of the table T is provided with a polishing cloth Sc on the upper surface, and is driven to rotate in a horizontal plane by a drive spindle Ss.

  On the other hand, the polishing head H holds the semiconductor wafer W below, and is driven and rotated by being supported by the upper support U to pressurize the polishing cloth Sc of the surface plate S while rotating the semiconductor wafer W. Thus, the surface of the semiconductor wafer W is polished.

  The polishing head H in the polishing apparatus A includes a head body I that is rotationally driven, a disk-shaped chuck C that holds the semiconductor wafer W on the work holding surface Cw, and an annular retainer R that surrounds the chuck C. The chuck C and the retainer R are coupled so as to rotate integrally with the head body I, and are supported so as to be vertically movable and swingable with respect to the head body I.

  Also, an annular rubber plate Gc is installed between the head main body I and the chuck C to define an air chamber Jc, and an air pump Pc is connected to the air chamber Jc via a regulator Lc. The air pump Pc, the regulator Lc, the air chamber Jc, and the like constitute chuck pressurizing means Kc that pressurizes the chuck C over the entire surface with air supplied from the air pump Pc.

  Furthermore, an annular rubber plate Gr is installed between the head body I and the retainer R to define an air chamber Jr, and an air pump Pr is connected to the air chamber Jr via a regulator Lr. The air pump Pr, the regulator Lr, the air chamber Jr, and the like constitute a retainer pressurizing unit Kr that pressurizes the retainer R over the entire surface with air supplied by the air pump Pr.

  Here, as a configuration in which the chuck C and the retainer R of the polishing head H are supported so as to be movable up and down and swingable with respect to the head main body I, the retainer R is supported by the head main body I, and the chuck C is supported by the retainer R. (For example, see Patent Document 1 and Patent Document 2), a structure in which the chuck C is supported by the head body I, and a retainer R is supported by the chuck C (for example, see Patent Document 3). ing.

  That is, in the polishing apparatus A shown in FIGS. 11 to 14, the retainer R is attached to the head main body I by the outer peripheral ball type retainer support mechanism Vr interposed between the peripheral wall of the head main body I and the outer periphery of the retainer R. In other words, the chuck C is supported with respect to the retainer R by an outer peripheral ball type chuck support mechanism Vc interposed between the inner periphery of the retainer R and the outer periphery of the chuck C. For example, the chuck C is supported with respect to the head body I so as to be movable up and down and swingable.

Further, in the polishing apparatus A shown in FIGS. 15 to 18, the chuck C is attached to the head main body I by a ball-type chuck support mechanism Vc interposed between the center of the head main body I and the center of the chuck C. In other words, the retainer R is supported with respect to the chuck C by an outer peripheral ball type retainer support mechanism Vr interposed between the outer periphery of the chuck C and the inner periphery of the retainer R. A retainer R is supported on the head body I so as to be movable up and down and swingable.
Japanese Patent No. 0294600 JP 2000-343422 A JP 09-168968 A

    By the way, the chuck support mechanism Vc and the retainer support mechanism Vr of the polishing apparatus A described above also have a function of supporting the chuck C and the retainer R in the horizontal direction, respectively.

  That is, during the polishing operation by the polishing apparatus A described above, the surface of the semiconductor wafer W held by the chuck C and the lower surface of the retainer R rub against the polishing cloth Sc, thereby acting on the chuck C and the retainer R. The lateral force (the external force in the horizontal direction) is supported by the chuck support mechanism Vc and the retainer support mechanism Vr.

  On the other hand, in order to improve the polishing accuracy of the semiconductor wafer W, it is important to make the pressure distribution on the semiconductor wafer W during the polishing operation uniform. In order to make this pressure distribution close to uniform, the lateral force during polishing is important. The smaller the tilt moment generated by is, the better.

  Here, in the structure in which the chuck C is supported by the head body I via the retainer R as in the polishing apparatus A shown in FIGS. 11 to 14, the retainer R is caused by friction with the polishing cloth Sc. Not only the lateral force Fr acts, but also the lateral force Fc acting on the chuck C acts together. Further, when the heights of the supporting points of the chuck C and the retainer R are different, the lateral force Fr is generated. Will increase the tilting moment.

  As shown in FIG. 12, in the state where the polishing cloth Sc moves with respect to the polishing head E as indicated by the arrow Q, the chuck support mechanism Vc that serves as a support point (swing center) of the retainer R with respect to the head body I is used. If the height Hc of the downstream ball Bc is different from the height Hr of the downstream ball Br in the retainer support mechanism Vr, which is the support point (swing center) of the chuck C with respect to the retainer R, the inclination of the chuck C While the moment is “Fc × Hc”, the inclination moment of the retainer R is “Fr × Hr + Fc × (Hr−Hc)”, which is increased by the lateral force Fc applied to the chuck C.

  Further, as in the polishing apparatus A shown in FIG. 13, the height Hc of the ball Bc on the downstream side in the chuck support mechanism Vc, which becomes the support point (swing center) of the retainer R with respect to the head body I, and the chuck C with respect to the retainer R Even when the retainer R is tilted as shown in FIG. 14 even if the device has the same height Hr of the downstream ball Br in the retainer support mechanism Vr as the support point (swing center) of the retainer R, the height Hc Due to the difference from the height Hr, the inclination moment of the chuck C is “Fc × Hc”, whereas the inclination moment of the retainer R is “Fr × Hr + Fc × ltanθ”, which is also the lateral force applied to the chuck C. Increased by Fc.

  As described above, in the polishing apparatus A in which the chuck C is supported by the head main body I via the retainer R, the inclination moment of the retainer R increases during the polishing operation. Pressure variation) and the polishing allowance distribution is likely to be non-uniform, leading to a disadvantage that the polishing accuracy of the semiconductor wafer W is greatly reduced.

  Furthermore, in the polishing apparatus A shown in FIGS. 11 to 14, only the lateral force Fc acts on the chuck support mechanism Vc, but the resultant force of the lateral force Fc and the lateral force Fr acts on the retainer support mechanism Vr. Further, when an excessive load is applied to the retainer support mechanism Vr, there are problems such as trouble in the smoothness of the vertical movement and swinging of the retainer R, and a significant reduction in the mechanical life.

  On the other hand, in the structure in which the retainer R is supported by the head main body I via the chuck C as in the polishing apparatus A shown in FIGS. 15 to 18, the chuck C is laterally moved by friction with the polishing cloth Sc. Not only the force Fc acts, but also the lateral force Fr acting on the retainer R acts together. Further, when the heights of the support points of the chuck C and the retainer R are different, they are generated by the lateral force. The tilt moment will increase.

  As shown in FIG. 16, in the state where the polishing cloth Sc is moving as indicated by the arrow Q with respect to the polishing head E, the chuck support mechanism Vc that serves as a support point (swing center) of the chuck C with respect to the head body I is used. When the height Hc of the ball Bc is different from the height Hr of the upstream ball Br in the retainer support mechanism Vr, which is the support point (swing center) of the retainer R with respect to the chuck C, the inclination moment of the retainer R is “ Whereas “Fr × Hr”, the inclination moment of the chuck C is “Fc × Hc + Fr × (Hc−Hr)”, which is increased by the lateral force Fr applied to the retainer R.

  In addition, as in the polishing apparatus A shown in FIG. 17, the height Hc of the ball Bc in the chuck support mechanism Vc, which becomes the support point (swing center) of the chuck C with respect to the head body I, and the support point of the retainer R with respect to the chuck C Even in an apparatus having the same height Hr of the upstream ball Br in the retainer support mechanism Vr as the (swing center), when the chuck C is tilted as shown in FIG. 18, the height Hc and the height Hr And the inclination moment of the retainer R is “Fr × Hr”, whereas the inclination moment of the chuck C is “Fc × Hc + Fr × ltanθ”, which is also increased by the lateral force Fr applied to the retainer R. Will be.

  In this way, in the polishing apparatus A in which the retainer R is supported by the head body I via the chuck C, the inclination moment of the chuck C increases during the polishing operation, so that the surface pressure distribution (surface at each location) Pressure variation) and the polishing allowance distribution is likely to be non-uniform, leading to a disadvantage that the polishing accuracy of the semiconductor wafer W is greatly reduced.

  Further, in the polishing apparatus A shown in FIGS. 15 to 18, only the lateral force Fr acts on the retainer support mechanism Vr, but the resultant force of the lateral force Fr and the lateral force Fc acts on the chuck support mechanism Vc. When an excessive load is applied to the chuck support mechanism Vc, there is a problem that the vertical movement or swinging of the chuck C is hindered or the mechanical life is remarkably shortened.

  In view of the above-described actual situation, the present invention prevents a tilting moment from being generated in the chuck and the retainer during the polishing operation, and can improve the polishing accuracy with respect to the disk-shaped workpiece. The purpose is to provide.

  Further, in view of the above situation, the present invention prevents an excessive load from being applied to the chuck support mechanism and the retainer support mechanism during the polishing operation, thereby ensuring the smooth operation of the chuck and the retainer and the chuck support. It is an object of the present invention to provide a polishing apparatus and a polishing head capable of suppressing a decrease in mechanical life of the mechanism and the retainer support mechanism.

    In order to achieve the above object, a polishing apparatus according to a first aspect of the present invention includes a chuck and a retainer supported so as to be movable up and down and swingable with respect to the head body, and a chuck that pressurizes the chuck over the entire surface. A polishing apparatus comprising a polishing head having a pressurizing means and a retainer pressurizing means for pressurizing the retainer over the entire surface from above, wherein the chuck is made independent of the retainer via a chuck support mechanism on the head body. The polishing head is characterized in that the polishing head is supported, and the retainer is supported on the head main body independently of the chuck via the retainer support mechanism.

  The polishing apparatus related to the invention of claim 2 is the polishing apparatus related to the invention of claim 1, wherein the support point of the chuck for the head body of the polishing head and the support point of the retainer for the head body have different heights. It is characterized by.

  A polishing apparatus according to a third aspect of the invention is the polishing apparatus according to the first aspect of the invention, wherein the chuck support point of the polishing head with respect to the head body and the support point of the retainer with respect to the head body have the same height. It is characterized by.

  Further, a polishing head according to the invention of claim 4 includes a chuck and a retainer supported so as to be vertically movable and swingable with respect to the head main body, a chuck pressurizing unit that pressurizes the chuck over the entire surface, A polishing head comprising a retainer pressurizing unit that pressurizes the retainer over the entire surface from above, wherein the chuck is supported on the head body independently of the retainer via a chuck support mechanism, and the retainer is mounted on the head body. It is characterized by being supported independently of the chuck through a retainer support mechanism.

  A polishing head according to a fifth aspect of the invention is characterized in that, in the polishing head according to the fourth aspect of the invention, the support point of the chuck with respect to the head body and the support point of the retainer with respect to the head body have different heights. Yes.

  A polishing head according to a sixth aspect of the invention is characterized in that, in the polishing head according to the fourth aspect of the invention, the support point of the chuck with respect to the head main body is set to the same height as the support point of the retainer with respect to the head main body. Yes.

    According to the polishing apparatus relating to the first aspect of the invention, the chuck and the retainer constituting the polishing head are supported independently of each other with respect to the head body, so that the lateral force generated between the chuck and the retainer during the polishing operation. Is not transmitted between the two, and no extra tilting moment is generated in the chuck and retainer, so that the pressure distribution on the semiconductor wafer W during the polishing operation can be made as uniform as possible. Accordingly, it is possible to greatly improve the polishing accuracy of the disk-shaped workpiece held by the polishing head.

  According to the polishing apparatus of the first aspect of the present invention, the chuck and the retainer that constitute the polishing head are supported independently from each other with respect to the head body, so that the chuck support mechanism and the retainer support can be supported during the polishing operation. It is possible to prevent an excessive load from being applied to the mechanism, thereby ensuring a smooth operation of the chuck and the retainer, and suppressing a decrease in mechanical life of the chuck support mechanism and the retainer support mechanism.

  According to the polishing apparatus related to the invention of claim 2, even if the support point of the chuck with respect to the head main body of the polishing head and the support point of the retainer with respect to the head main body are at different heights, the polishing accuracy with respect to the disk-shaped workpiece In addition, the smooth operation of the chuck and the retainer can be secured, and the mechanical life of the chuck support mechanism and the retainer support mechanism can be prevented from being lowered.

  According to the polishing apparatus relating to the invention of claim 3, even if the support point of the chuck with respect to the head body of the polishing head and the support point of the retainer with respect to the head body are equal to each other, the polishing accuracy with respect to the disk-shaped workpiece In addition, the smooth operation of the chuck and the retainer can be secured, and the mechanical life of the chuck support mechanism and the retainer support mechanism can be prevented from being lowered.

  According to the polishing head relating to the invention of claim 4, since the chuck and the retainer constituting the polishing head are supported independently from each other with respect to the head main body, the lateral force generated in the chuck and the retainer during the polishing operation is supported. Since no force is transmitted between the two and no extra tilting moment is generated in the chuck and retainer, the pressure distribution on the semiconductor wafer W during the polishing operation can be made as uniform as possible. Therefore, it becomes possible to greatly improve the polishing accuracy of the disk-shaped workpiece held by the polishing head.

  According to the polishing apparatus of the first aspect of the present invention, the chuck and the retainer constituting the polishing head are supported independently from each other with respect to the head body, so that the chuck support mechanism and the retainer can be used during the polishing operation. It is possible to prevent an excessive load from being applied to the support mechanism, thereby ensuring a smooth operation of the chuck and the retainer, and suppressing a decrease in mechanical life of the chuck support mechanism and the retainer support mechanism.

  According to the polishing head relating to the invention of claim 5, even if the support point of the chuck with respect to the head main body of the polishing head and the support point of the retainer with respect to the head main body are different from each other, the polishing with respect to the disk-shaped workpiece is performed. The accuracy can be improved, and at the same time, the smooth operation of the chuck and the retainer can be ensured, and the mechanical life of the chuck support mechanism and the retainer support mechanism can be suppressed from decreasing.

  According to the polishing head relating to the invention of claim 6, even when the support point of the chuck with respect to the head main body of the polishing head and the support point of the retainer with respect to the head main body are equal to each other, the polishing with respect to the disk-shaped workpiece is performed. The accuracy can be improved, and at the same time, the smooth operation of the chuck and the retainer can be ensured, and the mechanical life of the chuck support mechanism and the retainer support mechanism can be suppressed from decreasing.

Hereinafter, the configuration of a polishing apparatus and a polishing head according to the present invention will be described in detail with reference to the drawings illustrating some embodiments.
FIGS. 1 and 2 show a first embodiment of a polishing apparatus and a polishing head according to the present invention. The basic structure of this polishing apparatus is the same as that of the conventional polishing apparatus A shown in FIGS. There is no significant change.

  That is, the polishing apparatus 1 includes a table (not shown) on which a disk-shaped surface plate 2 is installed, and a polishing head 10 positioned above the surface plate 2, and is a surface plate that is driven to rotate in a horizontal plane. A polishing cloth 3 is pasted on the upper surface of 2.

  On the other hand, the polishing head 10 holds the semiconductor wafer W below and is driven and rotated by being supported by an upper support (not shown), and the polishing cloth 3 of the surface plate 2 is rotated while rotating the semiconductor wafer W. By polishing the surface of the semiconductor wafer W, the surface of the semiconductor wafer W is polished.

  The polishing head 10 includes a head body 11 that is rotationally driven, a disk-shaped chuck 12 that holds a semiconductor wafer W on a work holding surface 12w, and an annular retainer 13 that surrounds the chuck 12. The chuck 12 and the retainer 13 are connected to rotate integrally with the head body 11.

  The chuck 12 is supported by the ball-type chuck support mechanism 14 interposed between the center portion of the chuck 12 and the center portion of the head body 11 so as to be movable up and down and swingable with respect to the head body 11. Further, the chuck support mechanism 14 also supports the head body 11 in the horizontal direction.

  On the other hand, the retainer 13 is supported by the head body 11 so as to be vertically movable and swingable by an outer peripheral ball type retainer support mechanism 15 interposed between the outer periphery of the retainer 13 and the peripheral wall of the head body 11. Furthermore, the retainer support mechanism 15 also supports the head body 11 in the horizontal direction.

  That is, the chuck 12 is supported by the head body 11 independently of the retainer 13 via the chuck support mechanism 14, and the retainer 13 is attached to the head body 11 by the chuck 12 via the retainer support mechanism 15. Independently supported.

  An annular rubber plate 16 is installed between the head body 11 and the chuck 12 to define an air chamber 11C. An air pump 5C is connected to the air chamber 11C via a regulator 4C. These air pump 5C, regulator 4C, air chamber 11C, and the like constitute a chuck pressurizing means 6C that pressurizes the chuck 12 from above with the air supplied by the air pump 5C.

  An annular rubber plate 17 is installed between the head body 11 and the retainer 13 to define an air chamber 11R. An air pump 5R is connected to the air chamber 11R via a regulator 4R. The air pump 5R, the regulator 4R, the air chamber 11R, and the like constitute retainer pressurizing means 6R that pressurizes the retainer 13 over the entire surface from above with air supplied by the air pump 5R.

  In the polishing head 10 of the polishing apparatus 1 described above, the support point of the chuck 12 with respect to the head main body 11 (in the situation where the polishing cloth 3 moves with respect to the polishing head 10 as indicated by the arrow Q, as shown in FIG. The height Hc of the ball 14b in the chuck support mechanism 14 serving as a swing center) and the height of the ball 15b on the downstream side in the retainer support mechanism 15 serving as a support point (swing center) of the retainer 13 with respect to the head body 11. It is different from Hr.

  Here, in the polishing apparatus 1 having the above-described configuration, the inclination moment generated in the chuck 12 of the polishing head 10 is “Fc × Hc” during the polishing operation, and the inclination moment generated in the retainer 13 of the polishing head 10 is “Fr ×. Hr ". Incidentally, Fc is a lateral force acting on the chuck 12, and Fr is a lateral force acting on the retainer 13.

  That is, in the polishing apparatus 1 having the above-described configuration, the chuck 12 and the retainer 13 that constitute the polishing head 10 are supported independently from each other with respect to the head main body 11, and therefore the chuck 12 and the retainer are subjected to the polishing operation. 13 is not transmitted between the two, and the chuck 12 and the retainer 13 are more than the inclination moment inevitably generated from the lateral force acting on each and the height of the swing center. No tilting moment is generated.

  Thus, the pressure distribution on the semiconductor wafer W during the polishing operation becomes as uniform as possible, and the polishing accuracy of the semiconductor wafer W held by the polishing head 10 can be greatly improved.

  Further, in the polishing apparatus 1 having the above-described configuration, the chuck 12 and the retainer 13 that constitute the polishing head 10 are supported independently from each other with respect to the head body 11, so that the chuck support mechanism 14 can support the chuck 12. Only the lateral force Fc acts, and only the lateral force Fr against the retainer 13 acts on the retainer support mechanism 15.

  Thus, an excessive load is prevented from being applied to the chuck support mechanism 14 and the retainer support mechanism 15 during the polishing operation, so that the smooth operation of the chuck 12 and the retainer 13 is ensured, and the chuck support mechanism 14 and the retainer support mechanism 15 are secured. It is possible to suppress a decrease in the mechanical life at.

  The polishing apparatus 1 'shown in FIG. 3 and FIG. 4 has a supporting point (swinging point) of the chuck 12' with respect to the head body 11 'in a state where the polishing cloth 3' is moved as indicated by an arrow Q with respect to the polishing head 10 '. The height Hc of the ball 14b 'in the chuck support mechanism 14', which is the dynamic center), and the downstream ball in the retainer support mechanism 15 ', which is the support point (swing center) of the retainer 13' with respect to the head body 11 '. The height Hr of 15b 'is set equal.

  The configuration of the polishing apparatus 1 ′ described above is basically the same as that of the polishing apparatus 1 shown in FIGS. 1 and 2 except for the layout of the chuck support mechanism 14 ′ and the retainer support mechanism 15 ′. Components having the same functions as those of the polishing apparatus 1 are denoted by the same reference numerals as those in FIGS. 1 and 2 with a dash in FIG. 3 and FIG. To do.

  In the polishing apparatus 1 ′, when the polishing head 10 ′ is inclined as shown in FIG. 4, the head main body 11 ′ is in a state where the polishing cloth 3 ′ is moved as indicated by the arrow Q with respect to the polishing head 10 ′. The retainer is the support point (swing center) of the ball 14b 'in the chuck support mechanism 14' and the support point (swing center) of the retainer 13 'with respect to the head body 11'. The height Hr of the downstream ball 15b 'in the support mechanism 15' is different.

  However, in the polishing apparatus 1 ′, the tilting moment generated in the chuck 12 ′ of the polishing head 10 ′ during polishing is “Fc × Hc”, and the tilting moment generated in the retainer 13 ′ of the polishing head 10 ′ is “Fr”. × Hr ″, and the chuck 12 ′ and the retainer 13 ′ do not have an excessive tilt moment more than the tilt moment inevitably generated from the lateral force acting on each of them and the height of the swing center, so that the semiconductor during polishing work The pressure distribution on the wafer W becomes as uniform as possible, and the polishing accuracy of the semiconductor wafer W held by the polishing head 10 'can be greatly improved, as in the polishing apparatus 1 shown in FIGS. it can.

  Further, in the polishing apparatus 1 ′ having the above-described configuration, an excessive load is applied to the chuck support mechanism 14 ′ and the retainer support mechanism 15 ′ during the polishing operation, similarly to the polishing apparatus 1 shown in FIGS. 1 and 2. Accordingly, the smooth operation of the chuck 12 'and the retainer 13' can be ensured, and the deterioration of the mechanical life of the chuck support mechanism 14 'and the retainer support mechanism 15' can be suppressed.

  FIGS. 5 and 6 show a second embodiment of a polishing apparatus and a polishing head according to the present invention. The basic structure of this polishing apparatus is the same as that of the conventional polishing apparatus A shown in FIGS. There is no significant change.

  That is, the polishing apparatus 100 includes a table (not shown) on which a disk-shaped surface plate 102 is installed, and a polishing head 110 positioned above the surface plate 102, and a surface plate that is driven to rotate in a horizontal plane. A polishing cloth 103 is attached to the upper surface of 102.

  On the other hand, the polishing head 110 holds the semiconductor wafer W below and is driven and rotated by being supported by an upper support (not shown), and the polishing cloth 103 of the surface plate 102 is rotated while rotating the semiconductor wafer W. By polishing the surface of the semiconductor wafer W, the surface of the semiconductor wafer W is polished.

  The polishing head 110 includes a head body 111 that is driven to rotate, a disk-shaped chuck 112 that holds the semiconductor wafer W on the work holding surface 112w, and an annular retainer 113 that surrounds the chuck 112. The chuck 112 and the retainer 113 are coupled to rotate integrally with the head body 111.

  The chuck 112 includes a ball-and-socket type chuck support mechanism 114 interposed between the head body 111, more specifically, a spherical shaft 114A projecting from the head body 111, and a straight formed on the chuck 112. The chuck support mechanism 114 including the bearing 114B is supported so as to be movable up and down and swingable with respect to the head body 111. Further, the chuck support mechanism 114 also supports the head body 111 in the horizontal direction. .

  On the other hand, the retainer 113 includes a ball and socket retainer support mechanism 115 interposed between the head main body 111, more specifically, a spherical shaft 115A protruding from the head main body 111, and a straight bearing formed on the retainer 113. The retainer support mechanism 115 including 115B is supported so as to be vertically movable and swingable with respect to the head main body 111, and further supported in the horizontal direction with respect to the head main body 111 by the retainer support mechanism 115.

  That is, the chuck 112 is supported by the head main body 111 independently of the retainer 113 via the chuck support mechanism 114, and the retainer 113 is attached to the head main body 111 by the chuck 112 via the retainer support mechanism 115. Independently supported.

  Between the head main body 111 and the chuck 112, an annular plate rubber 116 provided across the chuck 112 and the retainer 113 and an annular plate rubber 117 provided across the head main body 111 and the retainer 113 are provided. An air chamber 111C is defined.

  An air pump 105C is connected to the air chamber 111C through a regulator 104C, and the chuck 112 is applied over the entire surface from the air pump 105C, the regulator 104C, the air chamber 111C, and the like with air supplied by the air pump 105C. A chuck pressing means 106C is configured to press.

  Further, between the head main body 111 and the retainer 113, an annular plate rubber 117 provided across the head main body 111 and the retainer 113, and an annular plate rubber provided across the head main body 111 and the retainer 113. 118 defines an air chamber 111R.

  An air pump 105R is connected to the air chamber 111R via a regulator 104R, and a retainer 113 is applied over the entire surface from the air pump 105R, the regulator 104R, the air chamber 111R, and the like with air supplied by the air pump 105R. A retainer pressurizing means 106R for pressing is configured.

  In the polishing head 110 of the polishing apparatus 100 described above, the support point of the chuck 112 with respect to the head main body 111 (with the polishing cloth 103 moving with respect to the polishing head 110 as indicated by the arrow Q, as shown in FIG. Retainer support mechanism 115 serving as the support point (swing center) of the retainer 113 with respect to the head body 111 and the height Hc of the contact point between the spherical shaft 114A and the straight bearing 114B in the chuck support mechanism 114. The height Hr of the contact point between the spherical shaft 115A and the straight bearing 115B in FIG.

  Here, in the polishing apparatus 100 having the above-described configuration, the inclination moment generated in the chuck 112 of the polishing head 110 during the polishing operation is “Fc × Hc”, and the inclination moment generated in the retainer 113 of the polishing head 110 is “Fr × Hr ". Incidentally, Fc is a lateral force acting on the chuck 112, and Fr is a lateral force acting on the retainer 113.

  That is, in the polishing apparatus 100 having the above-described configuration, the chuck 112 and the retainer 113 that constitute the polishing head 110 are supported independently from each other with respect to the head main body 111. 113, the lateral force generated between the chuck 112 and the retainer 113 is not transmitted between them. Therefore, the chuck 112 and the retainer 113 have an excess of an inclination moment that is inevitably generated from the lateral force acting on each of them and the height of the swing center. No tilting moment is generated.

  Thus, the pressure distribution on the semiconductor wafer W during the polishing operation becomes as uniform as possible, and the polishing accuracy of the semiconductor wafer W held by the polishing head 110 can be greatly improved.

  Further, in the polishing apparatus 100 having the above-described configuration, the chuck 112 and the retainer 113 that constitute the polishing head 110 are supported independently from each other with respect to the head main body 111, so that the chuck support mechanism 114 can support the chuck 112. Only the lateral force Fc acts, and only the lateral force Fr against the retainer 113 acts on the retainer support mechanism 115.

  Thus, it is possible to prevent an excessive load from being applied to the chuck support mechanism 114 and the retainer support mechanism 115 during the polishing operation, thereby ensuring a smooth operation of the chuck 112 and the retainer 113, and the chuck support mechanism 114 and the retainer support mechanism 115. It is possible to suppress a decrease in the mechanical life at.

  The polishing apparatus 100 ′ shown in FIG. 7 and FIG. 8 has a support point (swinging point) of the chuck 112 ′ with respect to the head main body 111 ′ in a state where the polishing cloth 103 ′ is moved as indicated by an arrow Q with respect to the polishing head 110 ′. The height Hc of the contact point between the spherical shaft 114A ′ and the straight bearing 114B ′ in the chuck support mechanism 114 ′ and the support point (swing center) of the retainer 113 ′ with respect to the head body 111 ′. The height Hr of the contact point between the spherical shaft 115A ′ and the straight bearing 115B ′ in the retainer support mechanism 115 ′ is set equal.

  The configuration of the polishing apparatus 100 ′ described above is basically the same as that of the polishing apparatus 100 shown in FIGS. 5 and 6 except for the layout of the chuck support mechanism 114 ′ and the retainer support mechanism 115 ′. Components having the same functions as those of the polishing apparatus 100 are denoted by the same reference numerals in FIGS. 7 and 8 as those in FIGS. 7 and 8 and a detailed description thereof is omitted. To do.

  In the polishing apparatus 100 ′, when the polishing head 110 ′ is inclined as shown in FIG. 8, the head body 111 ′ is in a state where the polishing cloth 103 ′ is moved as indicated by the arrow Q with respect to the polishing head 110 ′. The height Hc of the contact point between the spherical shaft 114A ′ and the straight bearing 114B ′ in the chuck support mechanism 114 ′, which is the support point (swing center) of the chuck 112 ′ with respect to the head, and the support of the retainer 113 ′ with respect to the head body 111 ′ The height Hr of the contact point between the spherical shaft 115A ′ and the straight bearing 115B ′ in the retainer support mechanism 115 ′, which is a point (swing center), is different.

  However, in the polishing apparatus 100 ′, during the polishing operation, the inclination moment generated in the chuck 112 ′ of the polishing head 110 ′ is “Fc × Hc”, and the inclination moment generated in the retainer 113 ′ of the polishing head 110 ′ is “Fr”. × Hr ″, and the chuck 112 ′ and the retainer 113 ′ do not have an excessive tilt moment more than the tilt moment inevitably generated from the lateral force acting on each of them and the height of the swing center. The pressure distribution on the wafer W becomes as uniform as possible, and the polishing accuracy of the semiconductor wafer W held by the polishing head 110 ′ can be greatly improved, as in the polishing apparatus 100 shown in FIGS. it can.

  Further, in the polishing apparatus 100 ′ having the above-described configuration, an excessive load is applied to the chuck support mechanism 114 ′ and the retainer support mechanism 115 ′ during the polishing operation, similarly to the polishing apparatus 100 shown in FIGS. 5 and 6. Accordingly, the smooth operation of the chuck 112 ′ and the retainer 113 ′ can be ensured, and the deterioration of the mechanical life of the chuck support mechanism 114 ′ and the retainer support mechanism 115 ′ can be suppressed.

  FIG. 9A is a dynamic surface pressure distribution diagram showing the result of measuring the surface pressure during polishing by the polishing apparatus 100 (the polishing head 110) according to the present invention shown in FIGS. 9 (b) is a dynamic surface pressure distribution diagram showing the result of measuring the surface pressure during polishing by the conventional polishing apparatus A (polishing head E) shown in FIGS. 11 and 12. FIG.

  Here, FIGS. 9A and 9B show the chuck surface pressure: 20 kPa, the retainer surface pressure: 80 kPa, the table rotation speed: 20 rpm, the head rotation speed: 40 rpm, the polishing cloth: SUBA400, slurry (polishing agent). ): Under the measurement condition of Akozier AJ1530, the measurement result obtained by sandwiching the surface pressure measurement sheet between the table and the polishing cloth is expressed by the lightness and darkness of a large number of matrices. , Points to high surface pressure. The polishing apparatus 100 and the polishing apparatus A used for the measurement both have a chuck support point height of 30 mm with respect to the head body, and both have the same vacuum chuck.

  As is clear from FIGS. 9A and 9B, the chuck and the retainer are supported independently from each other by the polishing apparatus 100 according to the present invention, that is, the head body of the polishing head, rather than the conventional polishing apparatus A. It can be seen that the polishing apparatus has a smaller surface pressure distribution in the retainer and a smaller inclination moment, and this also shows the superiority of the polishing apparatus according to the present invention.

  In each of the above-described embodiments, a polishing apparatus and a polishing head for a semiconductor wafer, which is a kind of a disk-shaped workpiece, are exemplified, but various disk shapes such as various semiconductor substrates and liquid crystal glass substrates are exemplified. Of course, the present invention can also be effectively applied to a polishing apparatus and a polishing head for polishing the surface of a workpiece.

1 is a side sectional view showing a first embodiment of a polishing apparatus and a polishing head according to the present invention. The conceptual diagram which showed the mode of the lateral force which acts on a grinding | polishing head. The conceptual diagram which showed the mode of the lateral force which acts on a grinding | polishing head. The conceptual diagram which showed the mode of the lateral force which acts on a grinding | polishing head. Side surface sectional drawing which shows 2nd Example of the polishing apparatus and polishing head concerning this invention. The conceptual diagram which showed the mode of the lateral force which acts on a grinding | polishing head. The conceptual diagram which showed the mode of the lateral force which acts on a grinding | polishing head. The conceptual diagram which showed the mode of the lateral force which acts on a grinding | polishing head. (a) and (b) are dynamic surface pressure distribution diagrams showing the results of measuring the surface pressure during polishing by the polishing apparatus according to the present invention, and the results of measuring the surface pressure during polishing by a conventional polishing apparatus. FIG. (a) And (b) is the whole top view and whole side view which show the conventional grinding | polishing apparatus. The conceptual side surface sectional drawing centering on the grinding | polishing head which shows one aspect | mode of the conventional grinding | polishing apparatus. The conceptual diagram which showed the mode of the lateral force which acts on a grinding | polishing head. The conceptual diagram which showed the mode of the lateral force which acts on a grinding | polishing head. The conceptual diagram which showed the mode of the lateral force which acts on a grinding | polishing head. The conceptual side surface sectional drawing centering on the grinding | polishing head which shows the other aspect of the conventional grinding | polishing apparatus. The conceptual diagram which showed the mode of the lateral force which acts on a grinding | polishing head. The conceptual diagram which showed the mode of the lateral force which acts on a grinding | polishing head. The conceptual diagram which showed the mode of the lateral force which acts on a grinding | polishing head.

Explanation of symbols

1, 1 '... polisher,
10, 10 '... polishing head,
11, 11 '... head body,
12, 12 '... chuck,
13, 13 '... Retainer,
14, 14 '... chuck support mechanism,
14b, 14b '... ball (support point),
15, 15 '... Retainer support mechanism,
15b, 15b '... hole (support point),
6C ... chuck pressing means,
6R: Retainer pressurizing means,
100, 100 '... polisher,
110, 110 '... polishing head,
111, 111 '... head body,
112, 112 '... chuck,
113, 113 '... retainer,
114, 114 '... chuck support mechanism,
114A, 114A '... spherical shaft,
114B, 114B '... straight bearing,
115, 115 '... retainer support mechanism,
115A, 115A '... spherical shaft,
115B, 115B '... straight bearing,
106C ... chuck pressing means,
106R: Retainer pressurizing means,
W: Semiconductor wafer.

Claims (6)

A chuck and a retainer supported so as to be movable up and down and swingable with respect to the head main body, chuck pressurizing means for pressurizing the chuck over the entire surface from above, and a retainer for pressing the retainer over the entire surface from above A polishing apparatus comprising a polishing head having a pressurizing means,
A polishing head is provided, wherein the chuck is supported on the head body independently of the retainer via a chuck support mechanism, and the retainer is supported on the head body independently of the chuck via a retainer support mechanism. A polishing apparatus characterized by that. The polishing apparatus according to claim 1, wherein a support point of the chuck with respect to the head main body of the polishing head and a support point of the retainer with respect to the head main body have different heights. The polishing apparatus according to claim 1, wherein a support point of the chuck with respect to the head main body of the polishing head and a support point of the retainer with respect to the head main body are set to the same height. A chuck and a retainer supported so as to be movable up and down and swingable with respect to the head main body, chuck pressurizing means for pressurizing the chuck over the entire surface from above, and a retainer for pressing the retainer over the entire surface from above A polishing head comprising pressurizing means,
The chuck is supported on the head body independently of the retainer via a chuck support mechanism, and the retainer is supported on the head body independently of the chuck via a retainer support mechanism. Polishing head. The polishing head according to claim 4, wherein a support point of the chuck with respect to the head body and a support point of the retainer with respect to the head body have different heights. 5. The polishing head according to claim 4, wherein a support point of the chuck with respect to the head body is set to be equal to a support point of the retainer with respect to the head body.

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