JP2007049173A - Method for generating wiring pattern and method for manufacturing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a wiring pattern generating method capable of precisely and stably generating a thin, linear, and fine pattern, and to provide a device manufacturing method. <P>SOLUTION: A partition structural body comprises: a gate electrode groove part 56a whose width is smaller than the flight diameter of a function liquid L; and a gate electrode auxiliary groove part 57a, formed on a part of the gate electrode groove part 56a, whose width is not less than the flight diameter of the function liquid L and which has a circular arcuate shape in at least a part of the outer periphery. The wiring pattern generating method comprises: a process for arranging the function liquid L inside the gate electrode auxiliary groove part 57a; and a process for forming a gate electrode assisting part in the electrode auxiliary groove part 57a with the use of the function liquid L and forming a gate electrode, which is connected to the gate electrode assisting part, in the gate electrode groove part 56a by the capillarity of the function liquid L. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a wiring pattern forming method and a device manufacturing method.

For example, a photolithography method is widely used as a method for forming a wiring having a predetermined pattern used for an electronic circuit or an integrated circuit. This photolithography method requires large-scale equipment such as a vacuum apparatus and an exposure apparatus. And in the said apparatus, in order to form the wiring etc. which consist of a predetermined pattern, a complicated process is needed, The material use efficiency is about several percent, most of them must be discarded, and the subject that manufacturing cost is high is there.
On the other hand, a method of forming a wiring or the like having a predetermined pattern on a substrate by using a droplet discharge method of discharging a liquid material from a liquid discharge head, that is, a so-called inkjet method has been proposed (for example, (See Patent Document 1 and Patent Document 2). In this ink jet method, a pattern liquid material (functional liquid) is directly arranged on a substrate, and then converted into a pattern by heat treatment or laser irradiation. Therefore, according to this method, there is an advantage that the photolithography process is not required, the process is greatly simplified, and the raw material can be directly arranged at the pattern position, so that the amount of use can be reduced.
Japanese Patent Laid-Open No. 11-274671 JP 2000-216330 A

In recent years, the density of circuits constituting a device has been increased, and for example, further miniaturization and thinning of wiring have been required. In the pattern forming method using the above-described droplet discharge method, the discharged droplet spreads on the substrate after landing, and thus it is difficult to stably form a fine pattern. In particular, when the pattern is a conductive film, a liquid bulge is generated due to the spread of the above-described droplets, which may cause problems such as disconnection and short circuit.
Therefore, by forming a bank that partitions the wiring formation region and discharging the functional liquid toward the wiring formation region in a state in which the bank surface is liquid-repellent, the functional liquid ejected by the droplet ejection method A technique for forming a wiring having a width smaller than the diameter has also been proposed. In this way, by forming a bank that divides the wiring formation region, even if a part of the functional liquid is discharged onto the upper surface of the bank, the upper surface of the bank is subjected to liquid repellent treatment. The functional liquid flows into all the formation regions.
However, in recent years, it has been confirmed that when a part of the functional liquid touches the upper surface of the bank, a fine residue remains on the upper surface of the bank. For example, if the functional liquid has conductivity, the residue also has conductivity.If the residue remains on the upper surface of the bank as described above, the electrical characteristics of the wiring pattern itself and this wiring There is concern that the characteristics of the devices used will change.
The present invention has been made in view of the above problems, and an object of the present invention is to provide a wiring pattern forming method and a device manufacturing method capable of accurately and stably forming a thin linear fine pattern. To do.

  In order to solve the above-described problems, the present invention provides a wiring pattern forming method in which a plurality of patterns are formed by discharging a functional liquid into a recess of a partition wall structure formed on a substrate using a droplet discharge method. The partition structure is formed in a first recess having a width smaller than the flying diameter of the functional liquid and a part of the first recess, and the width is equal to or larger than the flying diameter of the functional liquid, And a second recess having a shape having an arc on at least a part of the outer periphery, the step of disposing the functional liquid in the second recess, and a second pattern in the second recess by the functional liquid. And forming a first pattern connected to the second pattern in the first recess by capillarity of the functional liquid.

  In the method for forming a wiring pattern according to the present invention, it is also preferable that the second recess has a circular shape in plan view.

  In the wiring pattern forming method of the present invention, a third recess that is connected to the first recess and has a width equal to or larger than the flying diameter of the functional liquid is formed in the partition wall structure. It is also preferable to provide a step of disposing a functional liquid and forming a third pattern connected to the first pattern in the third recess by the functional liquid.

  In the wiring pattern forming method of the present invention, a third recess connected to the second recess is formed in the partition wall structure, and the third recess is caused by a capillary phenomenon of the functional liquid disposed in the second recess. It is also preferable to provide a step of forming a third pattern connected to the second pattern.

  The device manufacturing method of the present invention includes a semiconductor layer provided on a substrate, a source electrode and a drain electrode connected to the semiconductor layer, and a gate provided to face the semiconductor layer with an insulating layer interposed therebetween. An electrode, and a step of applying a partition material on the substrate, and a width of the partition material is larger than a flying diameter of a functional liquid ejected using a droplet ejection method. A step of forming a small first recess, and a second recess provided in the partition material in a shape having a width equal to or larger than the flying diameter of the functional liquid and having an arc on at least a part of the outer periphery. A step of forming a connection with one recess, a step of disposing the functional liquid in the second recess, a second pattern formed in the second recess by the functional liquid, and a capillary phenomenon of the functional liquid. The second pattern in the first recess Characterized in that it comprises a step of forming a first pattern connected.

The device manufacturing method of the present invention includes a semiconductor layer provided on a substrate, a source electrode and a drain electrode connected to the semiconductor layer, and a gate provided to face the semiconductor layer with an insulating layer interposed therebetween. An electrode and a method of manufacturing a device comprising:
Applying a partition material on the substrate;
Forming a drain electrode groove in the partition material, the width of which is smaller than the flying diameter of the functional liquid ejected using the droplet ejection method;
A step of forming a drain electrode auxiliary groove portion provided in a shape having a width equal to or larger than the flying diameter of the functional liquid and having an arc on at least a part of the outer periphery with the drain electrode groove portion in the partition material. When,
Disposing a functional liquid in the drain electrode auxiliary groove,
Forming a drain electrode auxiliary portion in the drain electrode auxiliary groove portion by the functional liquid, and forming a drain electrode connected to the drain electrode auxiliary portion in the drain electrode groove portion by capillary action of the functional liquid. It is characterized by

  The device manufacturing method of the present invention includes a semiconductor layer provided on a substrate, a source electrode and a drain electrode connected to the semiconductor layer, and a gate provided to face the semiconductor layer with an insulating layer interposed therebetween. An electrode, and a step of applying a partition material on the substrate, and a width of the partition material is larger than a flying diameter of a functional liquid ejected using a droplet ejection method. A step of forming a small gate electrode groove, and a gate electrode auxiliary groove formed in the partition material having a width equal to or larger than the flying diameter of the functional liquid and having an arc at least at a part of the outer periphery. A step of forming the gate electrode groove portion by connecting to the gate electrode groove portion, a step of forming a gate wiring groove portion having a width equal to or larger than the flying diameter of the functional liquid in the partition material, and the gate electrode auxiliary groove portion Functional fluid Placing the functional liquid in the gate wiring groove, forming the gate electrode auxiliary part in the gate electrode auxiliary groove by the functional liquid, and forming the gate electrode wiring in the gate wiring groove by the functional liquid And forming a gate electrode connected to the gate electrode auxiliary portion and the gate electrode wiring in the gate electrode groove portion by capillary action of the functional liquid.

  The device manufacturing method of the present invention includes a semiconductor layer provided on a substrate, a source electrode and a drain electrode connected to the semiconductor layer, and a gate provided to face the semiconductor layer with an insulating layer interposed therebetween. An electrode, a step of applying a partition material on the substrate, and a source electrode having a width smaller than the flying diameter of the functional liquid discharged to the partition material using a droplet discharge method A step of forming a groove, and a source electrode auxiliary groove formed in the partition material in a shape having a width equal to or larger than the flying diameter of the functional liquid and having an arc on at least a part of the outer periphery. A step of forming the source wiring groove portion having a width equal to or larger than the flying diameter of the functional liquid in the partition material, and a function liquid in the source electrode auxiliary groove portion. To place And a step of disposing a functional liquid in the source wiring groove, a source electrode auxiliary part is formed in the source electrode auxiliary groove by the functional liquid, and a source electrode wiring is formed in the source wiring groove by the functional liquid, Forming a source electrode connected to the source electrode auxiliary portion and the source electrode wiring in the source electrode groove by capillarity of the functional liquid.

  In the device manufacturing method of the present invention, it is also preferable that an area where the source electrode and the semiconductor layer overlap in a plane is substantially equal to an area where the drain electrode and the semiconductor layer overlap in a plane.

[First Embodiment]
DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, an embodiment of the invention will be described with reference to the drawings. In addition, embodiment described below shows the one part aspect of this invention, and does not limit this invention. Further, in each drawing used in the following description, the scale is appropriately changed for each layer or each member so that each layer or each member has a size that can be recognized on the drawing.

(Droplet discharge device)
First, a droplet discharge device for forming a thin film pattern in this embodiment will be described with reference to FIG.
FIG. 1 is a perspective view showing a schematic configuration of a droplet discharge apparatus (inkjet apparatus) IJ that arranges a liquid material on a substrate by a droplet discharge method as an example of an apparatus used in the pattern forming method of the present invention.

The droplet discharge device IJ includes a droplet discharge head 1, an X-axis direction drive shaft 4, a Y-axis direction guide shaft 5, a control device CONT, a stage 7, a cleaning mechanism 8, a base 9, and a heater. 15.
The stage 7 supports the substrate P on which ink (liquid material) is provided by the droplet discharge device IJ, and includes a fixing mechanism (not shown) that fixes the substrate P at a reference position.

  The droplet discharge head 1 is a multi-nozzle type droplet discharge head including a plurality of discharge nozzles, and the longitudinal direction and the Y-axis direction are made to coincide. The plurality of ejection nozzles are provided on the lower surface of the droplet ejection head 1 at regular intervals along the Y-axis direction. From the ejection nozzle of the droplet ejection head 1, the ink containing the conductive fine particles described above is ejected onto the substrate P supported by the stage 7.

An X-axis direction drive motor 2 is connected to the X-axis direction drive shaft 4. The X-axis direction drive motor 2 is a stepping motor or the like, and rotates the X-axis direction drive shaft 4 when a drive signal in the X-axis direction is supplied from the control device CONT. When the X-axis direction drive shaft 4 rotates, the droplet discharge head 1 moves in the X-axis direction.
The Y-axis direction guide shaft 5 is fixed so as not to move with respect to the base 9. The stage 7 includes a Y-axis direction drive motor 3. The Y-axis direction drive motor 3 is a stepping motor or the like, and moves the stage 7 in the Y-axis direction when a drive signal in the Y-axis direction is supplied from the control device CONT.

The control device CONT supplies the droplet discharge head 1 with a voltage for controlling droplet discharge. In addition, a drive pulse signal for controlling the movement of the droplet discharge head 1 in the X-axis direction is supplied to the X-axis direction drive motor 2, and a drive pulse signal for controlling the movement of the stage 7 in the Y-axis direction is sent to the Y-axis direction drive motor 3. Supply.
The cleaning mechanism 8 cleans the droplet discharge head 1. The cleaning mechanism 8 is provided with a Y-axis direction drive motor (not shown). The cleaning mechanism 8 moves along the Y-axis direction guide shaft 5 by driving the Y-axis direction drive motor. The movement of the cleaning mechanism 8 is also controlled by the control device CONT.
Here, the heater 15 is a means for heat-treating the substrate P by lamp annealing, and performs evaporation and drying of the solvent contained in the liquid material applied on the substrate P. The heater 15 is also turned on and off by the control device CONT.

The droplet discharge device IJ discharges droplets onto the substrate P while relatively scanning the droplet discharge head 1 and the stage 7 that supports the substrate P. Here, in the following description, the X-axis direction is a scanning direction, and the Y-axis direction orthogonal to the X-axis direction is a non-scanning direction. Therefore, the discharge nozzles of the droplet discharge head 1 are provided at regular intervals in the Y-axis direction, which is the non-scanning direction. In FIG. 1, the droplet discharge head 1 is arranged at a right angle to the traveling direction of the substrate P, but the angle of the droplet discharging head 1 is adjusted so as to intersect the traveling direction of the substrate P. It may be.
In this way, the pitch between the nozzles can be adjusted by adjusting the angle of the droplet discharge head 1. Moreover, you may enable it to adjust the distance of the board | substrate P and a nozzle surface arbitrarily.

FIG. 2 is a diagram for explaining the principle of discharging a liquid material by a piezo method.
In FIG. 2, a piezo element 22 is installed adjacent to a liquid chamber 21 for storing a liquid material (wiring pattern ink, functional liquid). The liquid material is supplied to the liquid chamber 21 via a liquid material supply system 23 including a material tank that stores the liquid material.
The piezo element 22 is connected to a drive circuit 24, and a voltage is applied to the piezo element 22 via the drive circuit 24 to deform the piezo element 22, whereby the liquid chamber 21 is deformed and the liquid material is discharged from the nozzle 25. Is discharged. In this case, the amount of distortion of the piezo element 22 is controlled by changing the value of the applied voltage. Further, the strain rate of the piezo element 22 is controlled by changing the frequency of the applied voltage.
In addition to the piezo method in which ink is ejected using the piezoelectric element, which is the piezoelectric element described above, the liquid material is ejected by bubbles generated by heating the liquid material. Various known techniques such as a bubble method can be applied. Among these, the above-described piezo method has an advantage that it does not affect the composition of the material since heat is not applied to the liquid material.

Here, the functional liquid L is composed of a dispersion liquid in which conductive fine particles are dispersed in a dispersion medium, or a solution in which organic silver compounds or silver oxide nanoparticles are dispersed in a solvent (dispersion medium). Examples of the conductive fine particles include metal fine particles containing any one of gold, silver, copper, palladium, and nickel, oxides thereof, and fine particles of conductive polymers and superconductors.
These conductive fine particles can be used by coating the surface with an organic substance or the like in order to improve dispersibility. The particle diameter of the conductive fine particles is preferably 1 nm or more and 0.1 μm or less. If it is larger than 0.1 μm, there is a possibility that clogging may occur in the nozzle of the liquid discharge head described later. On the other hand, if it is smaller than 1 nm, the volume ratio of the coating agent to the conductive fine particles becomes large, and the ratio of organic substances in the obtained film becomes excessive.

  The dispersion medium is not particularly limited as long as it can disperse the conductive fine particles and does not cause aggregation. For example, in addition to water, alcohols such as methanol, ethanol, propanol, butanol, n-heptane, n-octane, decane, dodecane, tetradecane, toluene, xylene, cymene, durene, indene, dipentene, tetrahydronaphthalene, decahydro Hydrocarbon compounds such as naphthalene and cyclohexylbenzene, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, ethylene glycol methyl ethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol methyl ethyl ether, 1,2-dimethoxyethane, bis (2- Methoxyethyl) ether, ether compounds such as p-dioxane, propylene carbonate, γ- Butyrolactone, N- methyl-2-pyrrolidone, dimethylformamide, dimethyl sulfoxide, can be exemplified polar compounds such as cyclohexanone. Of these, water, alcohols, hydrocarbon compounds, and ether compounds are preferred from the viewpoints of fine particle dispersibility and dispersion stability, and ease of application to the droplet discharge method (inkjet method). More preferred dispersion media include water and hydrocarbon compounds.

  The surface tension of the conductive fine particle dispersion is preferably in the range of 0.02 N / m to 0.07 N / m. When the liquid is discharged by the droplet discharge method, if the surface tension is less than 0.02 N / m, the wettability of the ink composition with respect to the nozzle surface increases, and thus flight bending easily occurs, resulting in 0.07 N / m. If it exceeds the upper limit, the shape of the meniscus at the nozzle tip is unstable, and it becomes difficult to control the discharge amount and the discharge timing. In order to adjust the surface tension, a small amount of a surface tension regulator such as a fluorine-based, silicone-based, or nonionic-based material may be added to the dispersion within a range that does not significantly reduce the contact angle with the substrate. The nonionic surface tension modifier improves the wettability of the liquid to the substrate, improves the leveling property of the film, and helps prevent the occurrence of fine irregularities in the film. The surface tension modifier may contain an organic compound such as alcohol, ether, ester, or ketone, if necessary.

  The viscosity of the dispersion is preferably 1 mPa · s to 50 mPa · s. When the liquid material is ejected as droplets using the droplet ejection method, if the viscosity is less than 1 mPa · s, the nozzle periphery is easily contaminated by the outflow of ink, and if the viscosity is greater than 50 mPa · s, The frequency of clogging in the nozzle holes increases, and it becomes difficult to smoothly discharge droplets.

(Bank structure)
Next, the bank structure that constitutes one pixel will be described in detail with reference to FIG. FIG. 3 is a plan view schematically showing a bank structure constituting one pixel (including TFT). In FIG. 3, in order to facilitate understanding of the present embodiment, only the bank structure used when actually configuring one pixel will be extracted and described. In FIG. 3, for convenience, the banks formed in different layers are shown and described in common. Moreover, in each figure, in order to make each layer and each member the size which can be recognized on drawing, the scale is varied for every layer and each member.

First, the first layer shown in FIG. 3 will be described in detail with reference to FIG. 3 and FIG.
FIG. 4A is an enlarged plan view showing the first layer of the bank structure constituting one pixel shown in FIG. As shown in FIGS. 3 and 4A, the first-layer bank 34 constituting one pixel includes a gate wiring groove 55a (third recess) corresponding to the gate wiring and a gate electrode groove 56a corresponding to the gate electrode. (First recess) is formed.

  The gate wiring trench portion 55a is formed extending in the X-axis direction and has a width H1. The width H1 of the gate wiring groove 55a is formed to be equal to or larger than the flying diameter of the functional liquid L ejected from the above-described droplet ejection device IJ. Accordingly, the gate wiring trench portion 55a has a structure in which the discharged functional liquid L does not protrude from the upper surface of the bank 34.

  The gate electrode groove 56a is formed extending in the Y-axis direction, and the base end of the gate electrode groove 56a is connected substantially perpendicular to the gate wiring groove 55a. The gate electrode groove 56a has a width H2, and the width H2 of the gate electrode groove 56a is narrower than the width H1 of the gate wiring groove 55a. Specifically, it is formed smaller than the flying diameter of the functional liquid L discharged from the droplet discharge device IJ. Therefore, it is difficult to directly discharge the functional liquid L to the gate electrode groove 56a. Therefore, in the present embodiment, the functional liquid L discharged to the gate wiring groove 55a can be supplied to the gate electrode groove 56a by capillary action.

  In the present embodiment, a gate electrode auxiliary groove 57a (second recess) is formed in a circular shape in plan view at the tip of the gate electrode groove 56a. The gate electrode auxiliary groove 57a constitutes a part of the gate electrode groove 56a. Further, the width of the circular shape of the gate electrode auxiliary groove 57a is formed to be substantially equal to or larger than the flying diameter of the functional liquid L discharged from the droplet discharge device IJ. That is, in the present embodiment, the gate electrode auxiliary groove 57a is a region S1 from which the functional liquid L is discharged, and has a structure in which the functional liquid L does not protrude from the upper surface of the bank 34.

  By providing the gate electrode auxiliary groove 57a in this way, one end of the gate electrode groove 56a is connected to the gate wiring groove 55a and the other end is connected to the gate electrode auxiliary groove 57a. The gate wiring groove 55a and the gate electrode auxiliary groove 57a are regions where the functional liquid L is discharged as described above. Therefore, the functional liquid L is supplied to the gate electrode groove portion 56 a without protruding from the upper surface of the bank 34 from both ends. As a result, the functional liquid L can be wetted and spread over the entire gate electrode groove 56a, and a pattern having a desired shape can be formed.

Next, the second layer shown in FIG. 3 will be described in detail with reference to FIGS. 3 and 4B.
FIG. 4B is an enlarged plan view showing the second layer of the bank structure constituting one pixel shown in FIG. As shown in FIGS. 3 and 4B, in the second layer bank 34 constituting one pixel, the source wiring trench 42a (second recess) corresponding to the source wiring is formed above the gate wiring and electrode bank. A source electrode groove 43a (third recess) and a drain electrode groove 44a (first recess) corresponding to the drain electrode are formed. The source wiring, the electrode, and the drain electrode bank are removed after the source wiring, the electrode, and the drain electrode are formed, as will be described later.

The source wiring trench 42a extends in the X-axis direction and is formed so as to intersect the gate wiring trench 55a described above. Further, the source wiring groove 42a has a width H3 and is formed to be narrower than the flying diameter of the functional liquid L discharged from the droplet discharge device IJ. The width H3 of the source wiring groove 42a is preferably formed to be equal to or larger than the flying diameter of the functional liquid L as in the gate wiring groove 55a described above.
Further, as shown in FIGS. 3 and 4B, the source electrode trench 43a is formed to extend from the source interconnection trench 42a in the X-axis direction in the vicinity of the intersection of the source interconnection trench 42a and the gate interconnection trench 55a. Has been.
In the present embodiment, the region where the source wiring trench 42a and the source electrode trench 43a are combined is narrower than the flying diameter of the discharged functional liquid L, and has a fine pattern.

  A source wiring auxiliary groove 48a (second concave portion) is formed in the source wiring groove 42a. As shown in FIGS. 3 and 4B, the source wiring auxiliary groove 48a is provided in a circular shape in plan view, and is provided so as to overlap a part of the source wiring groove 42a and the source electrode groove 43a. A part of the source wiring auxiliary groove 48a is provided so as to face the source electrode groove 43a and to extend from the source wiring groove 42a in a hemispherical shape in plan view. Here, the width of the source wiring auxiliary groove 48a is formed to be equal to or larger than the flying diameter of the functional liquid L ejected from the above-described droplet ejection device IJ. Accordingly, the source wiring auxiliary groove portion 48 a is a region S <b> 3 from which the functional liquid L is discharged, and has a structure in which the functional liquid L does not protrude from the upper surface of the bank 34.

  As shown in FIGS. 3 and 4B, a second source wiring auxiliary groove 47a (second recess) is formed between the source electrode grooves 43a and 43a. The source wiring auxiliary groove portion 47a is connected substantially perpendicularly to the source wiring groove portion 42a and extends in the X-axis direction. The source wiring auxiliary groove 47a is formed in a circular shape in plan view, and is formed to be approximately equal to or larger than the flying diameter of the functional liquid L discharged from the droplet discharge device IJ. That is, in the present embodiment, the source wiring auxiliary groove 47a is a region S3 for discharging the functional liquid L. Therefore, by discharging the functional liquid L to the source wiring auxiliary groove 47a, the functional liquid L can be disposed without protruding from the groove, and the functional liquid L can be supplied to the source wiring groove 42a. It has become.

  Next, the drain electrode groove 44a formed in the second layer bank shown in FIGS. 3 and 4C will be described. FIG. 4C is a plan view showing the third layer of the bank structure constituting one pixel shown in FIG. In the second layer bank 34 of FIG. 3, a drain electrode groove 44a (first recess) corresponding to the drain electrode is formed.

  The drain electrode groove 44a is formed to face the source electrode groove 43a. The drain electrode groove 44a is formed in a rectangular shape like the source electrode groove 43a, and is formed so that the planar areas of the source electrode groove 43a and the drain electrode groove 44a are substantially equal.

  A drain electrode auxiliary groove 62a is formed in the drain electrode groove 44a. The drain electrode auxiliary groove 62a has a circular shape in plan view, and a part of the drain electrode auxiliary groove 62a overlaps with the drain electrode groove 44a. The drain electrode auxiliary groove 62a extends from the drain electrode groove 44a in a semicircular shape in plan view. Here, the width of the drain electrode auxiliary groove 62a is formed to be equal to or larger than the flying diameter of the functional liquid L ejected from the droplet ejection device IJ. In the present embodiment, the drain electrode auxiliary groove 62 a is a region S <b> 4 from which the functional liquid L is discharged, and has a structure in which the functional liquid L does not protrude from the upper surface of the bank 34.

Next, the third layer in FIG. 3 will be described in detail with reference to FIG.
As shown in FIG. 3, the pixel electrode groove 45a corresponding to the pixel electrode is formed in a region partitioned by the gate wiring groove 55a and the source wiring groove 42a. The pixel electrode groove 45a is formed so as to partially overlap the drain electrode groove 44a and the drain electrode auxiliary groove 62a.

  According to the present embodiment, the shape of the region (gate electrode auxiliary groove 57a) in which the functional liquid L is arranged becomes equal to the shape of the flying diameter of the discharged functional liquid L. Accordingly, the discharged functional liquid L can be stored in the gate electrode auxiliary groove 57a and supplied to the gate electrode groove 56a without protruding from the upper surface of the bank 34 or the like. The source wiring auxiliary groove portions 47a and 48a and the drain electrode auxiliary portion 62 also have the same effects as the gate electrode auxiliary groove portion 57a.

(Bank structure and pattern formation method)
FIGS. 5A to 5D and FIGS. 6A to 6C are cross-sectional views showing the bank structure and the pattern formation method in the order of steps. 5A to 5D show a cross-sectional portion along the line AA ′ of the bank structure shown in FIG. 3, that is, a gate electrode groove portion, a gate wiring groove portion, and a pattern forming method. It is a figure. The formation process of the source electrode trench, the source wiring trench, the drain electrode trench, and the like constituting the other bank structure shown in FIG. 3 is the same as the gate electrode formation process, and is therefore omitted in this embodiment. ing.

(Bank material application process)
First, as shown in FIG. 5A, a bank material is applied to the entire surface of the substrate 48 by spin coating. As the substrate 48, various materials such as glass, quartz glass, Si wafer, plastic film, and metal plate can be used. As the bank material, an insulating material made of photosensitive polysilazane, acrylic resin, polyimide, or the like can be used. Thereby, since a bang material has a function of a resist, a resist application process can be omitted.
It is also preferable to form a base layer such as a semiconductor film, a metal film, a dielectric film, or an organic film on the substrate surface of the substrate 48. Various methods such as spray coating, roll coating, die coating, and dip coating can be applied as the bank material coating method.

Next, as shown in FIGS. 5B and 6A, a gate wiring groove 55a, a gate electrode groove 56a, and a gate electrode auxiliary groove 57a are formed by photolithography. The photochemical reaction used for the development process in the following photolithography process is premised on a positive resist.
Specifically, first, a predetermined mask pattern is transferred to the bank 34 by using an exposure apparatus using a photomask. Here, a mask in which the following pattern is opened is used as the photomask. In a region corresponding to the gate wiring groove 55a, a mask opened so that the width H1 of the gate wiring groove 55a is equal to or larger than the flying diameter of the functional liquid L discharged from the droplet discharge device IJ. Is used. In the region corresponding to the gate electrode groove 56a, a mask opened so that the width H2 of the gate electrode groove a is narrower than the flying diameter of the functional liquid L discharged from the droplet discharge device IJ is used. . Further, in the region corresponding to the gate electrode auxiliary groove 57a, the shape of the gate electrode auxiliary groove 57a is a circular shape in plan view, and the width of this circular shape is a functional liquid discharged from the droplet discharge device IJ. A mask opened so as to be substantially equal to or larger than the flying diameter of L is used.

  Subsequently, the bank 34 to which the mask pattern has been transferred (exposure processing) is developed. In the present embodiment, since the positive resist (bank 34) is used, the bank 34 in the region irradiated with the exposure light is dissolved. As a result, as shown in FIG. 6A, the gate wiring groove 55a, the gate electrode groove 56a, and the gate electrode auxiliary groove 57a are formed in the bank 34.

(Liquid repellency treatment process)
Next, the surface of the bank material applied to the entire surface of the substrate 48 is subjected to plasma treatment using a fluorine-containing gas such as CF4, SF5, or CHF3 as a processing gas. This plasma treatment makes the surface of the bank material liquid repellent. As the liquid repellent treatment method, for example, a plasma treatment method (CF4 plasma treatment method) using tetrafluoromethane as a treatment gas in an air atmosphere can be employed.
The conditions of the CF4 plasma treatment are, for example, a plasma power of 50 to 1000 W, a tetrafluoromethane gas flow rate of 50 to 100 ml / min, a substrate transport speed to the plasma discharge electrode of 0.5 to 1020 mm / sec, and a substrate temperature of 70 to 90 ° C. It is said.
The processing gas is not limited to tetrafluoromethane (carbon tetrafluoride), and other fluorocarbon gases can also be used.

(Residue treatment process)
Next, a residue process is performed on the substrate 48 in order to remove a resist (organic matter) residue at the time of forming the bank in which the gate wiring trench portion 55a and the gate electrode trench portion 56a are formed. As the residue treatment method, various methods using a developer, an acid, or the like can be employed.

(Functional liquid placement process)
Next, as shown in FIGS. 5C and 6B, the droplet discharge device IJ discharges the functional liquid L, which is a wiring pattern forming material, into the gate wiring groove 55a and the gate electrode groove 56a.
In the present embodiment, since the gate electrode groove 56a is a fine wiring pattern, it is difficult to directly discharge the functional liquid L with the droplet discharge device IJ. Accordingly, as described above, the functional liquid L is discharged into the gate electrode groove 56a by a method in which the functional liquid L disposed in the gate wiring groove 55a flows into the gate electrode groove 56a by capillary action.

  Specifically, first, as shown in FIGS. 5C and 6B, the functional liquid L is discharged into the gate wiring groove 55a. Here, a part of the functional liquid L to be ejected is a connection portion between the gate wiring groove portion 55a and the gate electrode groove portion 56a, specifically, an axis passing through the center of the width H2 of the gate electrode groove portion 56a in the Y-axis direction, It discharges to the area | region where the axis which passes the midpoint of the width | variety H1 of the gate wiring groove part 55a in the X-axis direction crosses. That is, the discharged functional liquid L is discharged into a region where the discharged functional liquid L flows into the gate electrode groove 56a at the shortest distance by capillary action. Subsequently, in the same manner, the functional liquid L is discharged to the region S1 of the gate electrode auxiliary groove 57a by the droplet discharge device IJ.

As shown in FIGS. 5C and 6B, the functional liquid L disposed in the gate wiring groove 55a by the droplet discharge device IJ spreads wet inside the gate wiring groove 55a. Similarly, as shown in FIGS. 5C and 6B, the functional liquid L disposed in the gate electrode auxiliary groove 57a spreads out in the gate electrode auxiliary groove 57a.
As soon as the gate wiring groove 55a and the gate electrode auxiliary groove 57a spread out, the functional liquid L flows into the gate electrode groove 56a by capillary action as shown in FIG. 6C. Therefore, the functional liquid L can be supplied from both ends of the gate electrode groove 56a. By such a process, the gate electrode 56 is formed. Similarly, the gate wiring 55 is formed by spreading the functional liquid L in the gate wiring groove 55a. In the present embodiment, the pattern formed by the functional liquid L arranged in the gate electrode auxiliary groove portion 57a (hereinafter referred to as the gate electrode auxiliary portion 57 (second concave portion)) functions as the gate electrode 56. A part of the gate electrode 56 is formed.

(Intermediate drying process)
Next, after the functional liquid L is disposed in the gate wiring groove 55a and the gate electrode groove 56a to form the gate wiring 55 and the gate electrode 56, a drying process is performed as necessary. In order to obtain a desired film thickness after the intermediate drying step, the functional liquid disposing step may be repeated. The drying process can be performed by, for example, a normal hot plate that heats the substrate 48, an electric furnace, lamp annealing, and other various methods. Here, the light source of the light used for lamp annealing is not particularly limited, but may be an infrared lamp, a xenon lamp, a YAG laser, an argon laser, a carbon dioxide laser, XeF, XeCl, XeBr, KrF, KrCl, ArF, ArCl, or the like. An excimer laser or the like can be used as a light source. In general, these light sources have an output in the range of 10 W to 5000 W, but in the present embodiment, a range of 100 W to 1000 W is sufficient.

(Baking process)
In the dry film after the discharging process of the functional liquid L, it is necessary to completely remove the dispersion medium in order to improve electrical contact between the fine particles. Further, when a coating material such as an organic material is coated on the surface of the conductive fine particles in order to improve dispersibility, it is also necessary to remove this coating material. For this reason, the substrate after the discharge process is subjected to heat treatment and / or light treatment.
The heat treatment and / or light treatment is usually performed in the air, but can also be performed in an inert gas atmosphere such as hydrogen, nitrogen, argon, helium, etc., if necessary. The treatment temperature of heat treatment and / or light treatment depends on the boiling point (vapor pressure) of the dispersion medium, the type and pressure of the atmospheric gas, the thermal behavior such as fine particle dispersibility and oxidation, the presence and amount of coating material, It is determined appropriately in consideration of the heat resistant temperature.
For example, in order to remove the coating material made of organic matter, it is necessary to bake at about 300 ° C. In the case where a substrate such as plastic is used, it is preferably performed at room temperature or higher and 100 ° C. or lower.
By the above process, the dry film after the discharging process ensures electrical contact between the fine particles and is converted into a conductive film having a predetermined thickness, so that as shown in FIG. A conductive pattern, that is, a gate electrode 56 and a gate wiring 55 can be formed.

  According to the bank structure forming method of the present embodiment, the shape of the region (gate electrode auxiliary groove 57a) in which the functional liquid L is disposed is equal to the shape of the flying diameter of the discharged functional liquid L. Accordingly, the discharged functional liquid L can be supplied to the gate electrode groove 56a without being contained in the gate electrode auxiliary groove 57a and protruding from the upper surface of the bank 34 or the like.

<Pixel structure>
Next, a pixel formed using the bank structure of the present embodiment described above and a method for forming the pixel will be described with reference to FIGS.

FIG. 7 is a plan view showing the structure of one pixel 40 of the present embodiment.
As shown in FIG. 7, the pixel 40 includes a gate wiring 55 (third pattern) extending in the X-axis direction and a gate electrode 56 formed to extend from the gate wiring 55 in the Y-axis direction on the substrate 48. (First pattern). In addition, the pixel 40 intersects with the gate wiring 55 to form a source wiring 42 (first pattern) formed in the Y-axis direction and a source electrode 43 (third pattern) formed extending from the source wiring 42 in the X-axis direction. A drain electrode 44 (first pattern) formed to face the source electrode 43, and a pixel electrode 45 connected to the drain electrode 44.

  As shown in FIG. 7, the gate electrode 56 is formed in a circular shape in plan view at the tip. The distal end portion of the gate electrode 56 is the gate electrode auxiliary portion 57 for discharging the functional liquid L described above. Thus, in the present embodiment, the gate electrode auxiliary portion 57 is connected to the gate electrode 56 and functions as the gate electrode 56 and constitutes a part of the gate electrode 56.

  Similarly, as shown in FIG. 7, the source wiring 42 is partially formed with a portion extending in a semicircular shape in plan view and a portion extending in a circular shape in plan view. These portions are the patterns 47 and 48 (hereinafter referred to as source wiring auxiliary portions 47 and 48 (second concave portions)) formed in the source wiring auxiliary groove portions 47a and 48a for discharging the functional liquid L described above. is there. Thus, in the present embodiment, the source wiring auxiliary portions 47 and 48 are connected to the source wiring 42 and function as the source wiring 42, and constitute a part of the source wiring 42.

Further, similarly, as shown in FIG. 7, the drain electrode 44 is formed with a part extending in a semicircular shape in plan view. This portion is the pattern 62 (hereinafter referred to as the drain electrode auxiliary portion 62 (second concave portion)) formed in the drain electrode auxiliary groove portion 62a for discharging the functional liquid L described above. Thus, in this embodiment, the drain electrode auxiliary portion 62 is connected to the drain electrode, functions as the drain electrode 44, and constitutes a part of the drain electrode 44.
The pixel electrode 45 is electrically connected to the drain electrode 44 through the contact hole 49.

  Here, as shown in FIG. 7, the width of the gate electrode 56 is formed narrower than the width of the gate wiring 55. For example, the width of the gate electrode 56 is 10 μm, and the width of the gate wiring 55 is 20 μm. Further, the width of the source electrode 43 is formed to be narrower than the width of the source wiring 42. For example, the width of the source electrode 43 is 10 μm, and the width of the source wiring 42 is 20 μm. By forming in this way, even if the fine pattern (gate electrode 56, source electrode 43) cannot directly eject the functional liquid L, the functional liquid L flows into the fine pattern by utilizing the capillary phenomenon. Can be made.

  Also, as shown in FIG. 7 and FIG. 8 described later, an amorphous silicon film 46 (semiconductor layer) is formed between the gate electrode 56 and the source electrode 43 and drain electrode 44. In the present embodiment, the area where the source electrode 43 and the amorphous silicon film 46 overlap in a plane is substantially equal to the area where the drain electrode 44 and the amorphous silicon film 46 overlap in a plane. Thereby, the TFT 30 having excellent electrical characteristics can be realized.

Thus, the gate electrode auxiliary portion 57, the source wiring auxiliary portion 48, and the drain electrode auxiliary portion 62 have a circular shape having a width substantially equal to the flying diameter of the functional liquid L. Therefore, the area | region which discharges the functional liquid L can be made into the minimum area, and the cost reduction of the functional liquid L can be aimed at.
Further, in the gate electrode auxiliary portion 57, it is possible to minimize the decrease in the aperture ratio of the pixel electrode 45 formed adjacently.

<Pixel formation method>
FIGS. 8A to 8E are cross-sectional views showing a pixel formation process along the line AA ′ shown in FIG.
In the present embodiment, a pixel having the gate electrode, the source electrode, the drain electrode, and the like of the bottom gate TFT 30 is formed using the bank structure and the pattern forming method described above. In the following description, since the same process as the pattern forming process shown in FIGS. 5A to 5D and FIGS. 6A to 6C described above is performed, the description of the process is omitted. . Moreover, the same code | symbol is attached | subjected about the same component as the component shown in the said embodiment.

As shown in FIG. 8A, a gate insulating film 39 is formed on the bank flat surface including the wiring pattern formed by the steps shown in FIGS. 5A to 5D by plasma CVD or the like. .
Here, the gate insulating film 39 is made of silicon nitride. Next, an amorphous silicon film is formed on the gate insulating film 39. Subsequently, as shown in FIG. 8A, an amorphous silicon film 46 is formed by patterning into a predetermined shape by photolithography and etching.
Next, a contact layer 47 (n + silicon film) is formed on the amorphous silicon film 46. Subsequently, patterning is performed into a predetermined shape as shown in FIG. 8A by photolithography and etching.

  Next, as shown in FIG. 8B, a bank material 34b is applied to the entire surface including the contact layer 47 by spin coating or the like. Here, as the material constituting the bank material 34b, since it is necessary to have optical transparency and liquid repellency after formation, a polymer material such as an acrylic resin, a polyimide resin, an olefin resin, or a melamine resin is preferably used. . Then, in order to give the bank material 34b liquid repellency, CF4 plasma treatment or the like (plasma treatment using a gas having a fluorine component) is performed. It is also preferable to fill the bank material itself with a liquid repellent component (fluorine group or the like) in advance instead of such treatment. In this case, CF4 plasma treatment or the like can be omitted. The contact angle of the bank material 34b, which has been made liquid-repellent as described above, with respect to the functional liquid L is preferably 40 degrees or more.

  Next, a source / drain electrode bank 34b having a pixel pitch of 1/20 to 1/10 is formed. Specifically, first, a source electrode groove 43a is formed at a position corresponding to the source electrode 43 of the bank material 34b applied to the upper surface of the gate insulating film 39 by photolithography, and similarly a position corresponding to the drain electrode 44. A drain electrode groove 44a is formed in the substrate.

  Next, the functional liquid L is disposed in the source electrode groove 43a and the drain electrode groove 44a formed in the source / drain electrode bank 34b to form the source electrode 43 and the drain electrode 44. Specifically, first, the functional liquid L is disposed in the source wiring groove portion (not shown) by the droplet discharge device IJ. The width of the source electrode groove 43a is formed narrower than the width of the source wiring groove. Therefore, the functional liquid L disposed in the source wiring groove flows into the source electrode groove 43a by capillary action. As a result, as shown in FIG. 8C, the source electrode 43 is formed. A drain electrode 44 is formed by a similar method.

Next, as shown in FIG. 8C, after the source electrode 43 and the drain electrode 44 are formed, the source / drain electrode bank 34b is removed. Then, using each of the source electrode 43 and the drain electrode 44 remaining on the contact layer 47 as a mask, the N + type silicon film of the contact layer 47 formed between the source electrode 43 and the drain electrode 44 is etched.
By this etching process, the N + silicon film of the contact layer 47 formed between the source electrode 43 and the drain electrode 44 is removed, and a part of the amorphous silicon film 46 formed under the N + silicon film is exposed. In this way, the source region 32 made of N + silicon is formed under the source electrode 43, and the drain region 33 made of N + silicon is formed under the drain electrode 44. A channel region (amorphous silicon film 46) made of amorphous silicon is formed below these source region 32 and drain region 33.
The bottom gate TFT 30 is formed by the process described above.

  Next, as shown in FIG. 8D, a passivation film 38 (protective film) is formed on the source electrode 43, the drain electrode 44, the source region 32, the drain region 33, and the exposed silicon layer by vapor deposition, sputtering, or the like. ). Subsequently, the passivation film 38 on the gate insulating film 39 where the pixel electrode 45 described later is formed is removed by photolithography and etching. At the same time, a contact hole 49 is formed in the passivation film 38 on the drain electrode 44 in order to electrically connect the pixel electrode 45 and the source electrode 43.

  Next, as shown in FIG. 8E, a bank material is applied to a region including the gate insulating film 39 where the pixel electrode 45 is formed. Here, the bank material contains materials such as acrylic resin and polyimide resin as described above. Subsequently, a liquid repellent treatment is performed on the upper surface of the bank material (pixel electrode bank 34c) by plasma treatment or the like. Next, by photolithography, a pixel electrode groove is formed in a region where the pixel electrode 45 is formed, and a pixel electrode bank 34c is formed.

  Next, a pixel electrode 45 made of ITO (Indium Tin Oxide) is formed in the region partitioned by the pixel electrode bank 34c by an inkjet method. Further, by filling the pixel electrode 45 into the contact hole 49 described above, electrical connection between the pixel electrode 45 and the drain electrode 44 is ensured. In the present embodiment, a liquid repellent process is performed on the upper surface of the pixel electrode bank 34c. Therefore, the pixel electrode 45 can be formed without protruding from the pixel electrode groove.

[Second Embodiment]
Hereinafter, the present embodiment will be described with reference to the drawings. In the present embodiment, the structure of the drain electrode groove 44a corresponding to the drain electrode 44 constituting the TFT 30 will be described.
In the first embodiment, the drain electrode groove 44a corresponding to the drain electrode is formed in a rectangular shape in plan view. On the other hand, the present embodiment is different in that the shape of the drain electrode groove 44a is formed in an L shape in plan view. Other basic configurations are the same as those of the first embodiment, and common components are denoted by the same reference numerals and detailed description thereof is omitted.

FIGS. 9A and 9B are plan views showing the structure of the drain electrode groove 44a corresponding to the drain electrode 44 of the present embodiment. Here, the inner side of the drain electrode groove 44a is an acute angle side where the long sides of the L-shaped drain electrode groove 44a intersect, and the outer side is a region opposite to the inner side.
As shown in FIG. 9A, the drain electrode auxiliary groove 62a is formed in a circular shape in plan view inside the bent portion of the drain electrode groove 44a formed in an L shape. Specifically, the drain electrode auxiliary groove 62a is formed so as to overlap with a part of the drain electrode groove 44a, and extends in a fan shape in plan view from the bent portion of the drain electrode groove 44a. As described above, the drain electrode auxiliary groove 62 a is connected to the drain electrode groove 44 a and constitutes a part of the drain electrode 44. Further, the width of the drain electrode auxiliary groove 62a is formed to be substantially equal to or larger than the flying diameter of the functional liquid L discharged from the droplet discharge device IJ.
That is, in the present embodiment, the drain electrode auxiliary groove 62 a becomes a region S <b> 4 for discharging the functional liquid L and has a structure in which the functional liquid L does not protrude from the upper surface of the bank 34.

  It is also preferable that the drain electrode auxiliary groove 62a formed in the drain electrode groove 44a is formed at a position different from the position shown in FIG. Specifically, it is formed in a circular shape in plan view on the inner side of both tip portions of the drain electrode groove 44a formed in an L shape. Specifically, the drain electrode auxiliary groove 62a is formed so as to overlap with a part of the drain electrode groove 44a and extends in a semicircular shape inward from the drain electrode groove 44a. As described above, the drain electrode auxiliary groove 62 a is connected to the drain electrode groove 44 a and constitutes a part of the drain electrode 44. Further, the width of the drain electrode auxiliary groove 62a is formed to be substantially equal to or larger than the flying diameter of the functional liquid L discharged from the droplet discharge device IJ. That is, in the present embodiment, the drain electrode auxiliary groove 62 a becomes a region S <b> 4 for discharging the functional liquid L and has a structure in which the functional liquid L does not protrude from the upper surface of the bank 34.

  Thus, even when the drain electrode 44 is formed in an L shape and the width of the drain electrode 44 is smaller than the flying diameter of the discharged functional liquid L, by providing the drain electrode auxiliary groove 62a, The drain electrode 44 having a desired shape can be formed without leaving a residue of the functional liquid L on the upper surface of the bank 34.

<Electro-optical device>
Next, a liquid crystal display device which is an example of the electro-optical device of the present invention including pixels formed by the pattern forming method having the bank structure will be described.
FIG. 10 is a plan view of the liquid crystal display device according to the present invention as seen from the counter substrate side shown together with each component. FIG. 11 is a cross-sectional view taken along the line HH ′ of FIG. FIG. 12 is an equivalent circuit diagram of various elements and wirings in a plurality of pixels formed in a matrix in the image display region of the liquid crystal display device. In each figure used for the following description, each layer and each member are shown. Are made to be of a size recognizable on the drawing, the scales are different for each layer and each member.

  11 and 12, in the liquid crystal display device (electro-optical device) 100 according to the present embodiment, a pair of TFT array substrate 10 and counter substrate 20 are attached by a sealing material 52 which is a photo-curable sealing material. The liquid crystal 50 is sealed and held in the region partitioned by the sealing material 52. The sealing material 52 is formed in a frame shape that is closed in a region within the substrate surface, does not include a liquid crystal injection port, and does not have a trace sealed with the sealing material.

A peripheral parting 53 made of a light shielding material is formed in a region inside the region where the sealing material 52 is formed. A data line driving circuit 201 and a mounting terminal 202 are formed along one side of the TFT array substrate 10 in a region outside the sealing material 52, and the scanning line driving circuit 204 is formed along two sides adjacent to the one side. Is formed. On the remaining side of the TFT array substrate 10, a plurality of wirings 205 are provided for connecting between the scanning line driving circuits 204 provided on both sides of the image display area. Further, at least one corner of the counter substrate 20 is provided with an inter-substrate conductive material 206 for establishing electrical continuity between the TFT array substrate 10 and the counter substrate 20.
Instead of forming the data line driving circuit 201 and the scanning line driving circuit 204 on the TFT array substrate 10, for example, a TAB (Tape Automated Bonding) substrate on which a driving LSI is mounted and a peripheral portion of the TFT array substrate 10 The terminal group formed in the above may be electrically and mechanically connected via an anisotropic conductive film. In the liquid crystal display device 100, the type of liquid crystal 50 to be used, that is, an operation mode such as a TN (Twisted Nematic) mode, a C-TN method, a VA method, an IPS method mode, normally white mode / normally black, etc. Depending on the mode, a retardation plate, a polarizing plate, and the like are arranged in a predetermined direction, but the illustration is omitted here.
Further, when the liquid crystal display device 100 is configured for color display, in the counter substrate 20, for example, red (R), green (G), A blue (B) color filter is formed together with the protective film.

  In the image display region of the liquid crystal display device 100 having such a structure, as shown in FIG. 12, a plurality of pixels 100a are configured in a matrix, and each of these pixels 100a has a pixel switching region. TFT (switching element) 30 is formed, and a data line 6 a for supplying pixel signals S 1, S 2,..., Sn is electrically connected to the source of the TFT 30. The pixel signals S1, S2,..., Sn to be written to the data line 6a may be supplied line-sequentially in this order, or may be supplied for each group to a plurality of adjacent data lines 6a. . Further, the scanning line 3a is electrically connected to the gate of the TFT 30, and the scanning signals G1, G2,..., Gm are applied to the scanning line 3a in a pulse-sequential manner in this order at a predetermined timing. It is configured.

  The pixel electrode 19 is electrically connected to the drain of the TFT 30, and the pixel signal S1, S2,..., Sn supplied from the data line 6a is obtained by turning on the TFT 30 as a switching element for a certain period. Write to each pixel at a predetermined timing. The pixel signals S1, S2,..., Sn written in the liquid crystal via the pixel electrode 19 in this way are held for a certain period with the counter electrode 121 of the counter substrate 20 shown in FIG. In order to prevent the held pixel signals S1, S2,..., Sn from leaking, a storage capacitor 60 is added in parallel with the liquid crystal capacitor formed between the pixel electrode 19 and the counter electrode 121. For example, the voltage of the pixel electrode 19 is held by the storage capacitor 60 for a time that is three orders of magnitude longer than the time when the source voltage is applied. Thereby, the charge retention characteristics are improved, and the liquid crystal display device 100 with a high contrast ratio can be realized.

Next, an embodiment different from the electro-optical device (liquid crystal display device 100) will be described.
FIG. 13 is a side sectional view of an organic EL device including pixels formed by the bank structure and the pattern forming method. Hereinafter, a schematic configuration of the organic EL device will be described with reference to FIG.
In FIG. 13, an organic EL device 401 includes an organic EL element 402 including a substrate 411, a circuit element portion 421, a pixel electrode 431, a bank portion 441, a light emitting element 451, a cathode 461 (counter electrode), and a sealing substrate 471. In addition, wiring of a flexible substrate (not shown) and a driving IC (not shown) are connected. The circuit element portion 421 is configured by forming TFTs 60 as active elements on a substrate 411 and arranging a plurality of pixel electrodes 431 on the circuit element portion 421. And the gate wiring 61 which comprises TFT60 is formed with the formation method of the wiring pattern of embodiment mentioned above.

  Bank portions 441 are formed in a lattice shape between the pixel electrodes 431, and light emitting elements 451 are formed in the recess openings 444 generated by the bank portions 441. Note that the light emitting element 451 includes an element that emits red light, an element that emits green light, and an element that emits blue light. Accordingly, the organic EL device 401 realizes full color display. Yes. The cathode 461 is formed on the entire upper surface of the bank portion 441 and the light emitting element 451, and a sealing substrate 471 is laminated on the cathode 461.

  The manufacturing process of the organic EL device 401 including the organic EL element includes a bank part forming step for forming the bank part 441, a plasma processing step for appropriately forming the light emitting element 451, and a light emitting element formation for forming the light emitting element 451. A process, a counter electrode forming process for forming the cathode 461, and a sealing process for stacking and sealing the sealing substrate 471 on the cathode 461.

  The light emitting element forming step is to form the light emitting element 451 by forming the hole injection layer 452 and the light emitting layer 453 on the concave opening 444, that is, the pixel electrode 431. The hole injection layer forming step and the light emitting layer forming step It is equipped with. In the hole injection layer forming step, a liquid material for forming the hole injection layer 452 is discharged onto each pixel electrode 431, and the discharged liquid material is dried to form holes. A first drying step for forming the injection layer 452. The light emitting layer forming step includes a second discharge step of discharging a liquid material for forming the light emitting layer 453 onto the hole injection layer 452, and drying the discharged liquid material to form the light emitting layer 453. And a second drying step to be formed. As described above, the light emitting layer 453 is formed of three types of materials corresponding to the three colors of red, green, and blue. Therefore, the second discharge process includes three types of light emitting layers. There are three steps for discharging the material to each.

  In the light emitting element forming step, the droplet discharge device IJ can be used in the first discharging step in the hole injection layer forming step and the second discharging step in the light emitting layer forming step.

  Moreover, as a device (electro-optical device) according to the present invention, in addition to the above, a current is passed in parallel to the film surface through a small-area thin film formed on a PDP (plasma display panel) or substrate, The present invention can also be applied to a surface conduction electron-emitting device that utilizes a phenomenon in which electron emission occurs.

<Electronic equipment>
Next, specific examples of the electronic device of the present invention will be described.
FIG. 14 is a perspective view showing an example of a mobile phone. In FIG. 14, reference numeral 600 denotes a mobile phone body, and reference numeral 601 denotes a liquid crystal display unit including the liquid crystal display device of the above embodiment.
Since the electronic device shown in FIG. 14 includes the liquid crystal display device formed by the pattern forming method having the bank structure of the above embodiment, high quality and performance can be obtained.
In addition, although the electronic device of this embodiment shall be provided with a liquid crystal device, it can also be set as the electronic device provided with other electro-optical devices, such as an organic electroluminescent display apparatus and a plasma type display apparatus.

Next, an example in which a pattern formed by the pattern forming method having the bank structure of the present invention is applied to an antenna circuit will be described.
FIG. 15 shows a non-contact type card medium according to this embodiment. The non-contact type card medium 400 includes a semiconductor integrated circuit chip 408 and an antenna circuit 412 in a casing made up of a card base 402 and a card cover 418. And at least one of power supply and data exchange by at least one of electromagnetic waves or capacitive coupling with an external transmitter / receiver (not shown).

  In the present embodiment, the antenna circuit 412 is formed based on the pattern forming method of the present invention. Therefore, the antenna circuit 412 is miniaturized and thinned, and high quality and performance can be obtained.

  Note that the present invention can be applied to various electronic devices other than the electronic devices described above. For example, LCD projectors, multimedia-compatible personal computers (PCs) and engineering workstations (EWS), pagers, word processors, televisions, viewfinder type or monitor direct view type video tape recorders, electronic notebooks, electronic desk calculators, car navigation systems The present invention can be applied to electronic devices such as a device, a POS terminal, and a device provided with a touch panel.

The preferred embodiment of the present invention has been described above with reference to the accompanying drawings, but it goes without saying that the present invention is not limited to such an example. Various shapes, combinations, and the like of the constituent members shown in the above-described examples are examples, and various modifications can be made based on design requirements and the like without departing from the spirit of the present invention.
For example, in the above embodiment, the shape of the discharge region for discharging the functional liquid is formed in a circular shape in plan view. Instead of this, it is also preferable to form the discharge region in a shape having an arc on at least a part of the outer periphery. Specifically, various shapes such as an elliptical shape and a track shape can be employed.
In the above embodiment, a desired groove (for example, a gate electrode groove) is formed in the bank by photolithography and etching. Instead of this, it is also preferable to form a desired groove by patterning into a bank using a laser.

FIG. 1 is a perspective view showing a schematic configuration of a droplet discharge device of the present invention. FIG. 2 is a view for explaining the principle of ejecting a liquid material by a piezo method. FIG. 3 is a plan view schematically showing the bank structure. 4A to 4C are plan views schematically showing the structure of the bank corresponding to each of the gate electrode, the source electrode, and the drain electrode. 5A to 5D are cross-sectional views illustrating a method for forming a wiring pattern. 6A to 6C are cross-sectional views illustrating a method for forming a wiring pattern. FIG. 7 is a plan view schematically showing one pixel as a display area. 8A to 8E are cross-sectional views showing a process for forming one pixel. FIGS. 9A and 9B are plan views schematically showing a bank structure corresponding to a drain electrode of another embodiment. FIG. 10 is a plan view of the liquid crystal display device as viewed from the counter substrate side. FIG. 11 is a cross-sectional view of the liquid crystal display device taken along line H-H ′ in FIG. 10. FIG. 12 is an equivalent circuit diagram of the liquid crystal display device. FIG. 13 is a partial enlarged cross-sectional view of the organic EL device. FIG. 14 is a diagram showing a specific example of the electronic apparatus of the present invention. FIG. 15 is an exploded perspective view of a non-contact card medium.

Explanation of symbols

34 Bank (partition wall), 42 Source wiring (first pattern), 42a Source wiring groove (first recess), 43 Source electrode (third pattern), 43a Source electrode groove (third pattern), 44 Drain electrode (first Pattern), 44a drain electrode groove (first recess), 46 amorphous silicon film (semiconductor layer), 47, 48 source wiring auxiliary portion (second pattern), 47a, 48a source wiring auxiliary groove (second recess), 49 drain Electrode auxiliary part (second pattern), 49a Drain electrode auxiliary groove part (second concave part), 55 Gate wiring (third pattern), 55a Gate wiring groove part (third concave part), 56 Gate electrode (first pattern), 56a Gate Electrode groove portion (first recess), 57 Gate electrode auxiliary portion (second pattern), 57a Gate electrode auxiliary groove portion (second recess) 62 drain electrode auxiliary part (second pattern), 62a drain electrode auxiliary trench (second recess), L functional liquid

Claims (9)

A wiring pattern forming method for forming a plurality of patterns by discharging a functional liquid to a concave portion of a partition wall structure formed on a substrate using a droplet discharge method,
The partition structure is formed in a first recess having a width smaller than the flying diameter of the functional liquid and a part of the first recess, the width being equal to or larger than the flying diameter of the functional liquid, and an outer periphery. A second recess having a shape having an arc in at least a part of
Disposing the functional liquid in the second recess;
Forming a second pattern in the second recess by the functional liquid, and forming a first pattern connected to the second pattern in the first recess by a capillary phenomenon of the functional liquid. A method of forming a characteristic wiring pattern.   The method of forming a wiring pattern according to claim 1, wherein the second recess has a circular shape in plan view. A third recess that is connected to the first recess and whose width is equal to or larger than the flying diameter of the functional liquid is formed in the partition structure.
Disposing the functional liquid in the third recess;
The wiring pattern forming method according to claim 1, further comprising forming a third pattern connected to the first pattern in the third recess by the functional liquid. A third recess connected to the second recess is formed in the partition wall structure,
3. The method according to claim 1, further comprising a step of forming a third pattern connected to the second pattern in the third recess by capillarity of the functional liquid disposed in the second recess. A method for forming a wiring pattern as described. A device manufacturing method comprising: a semiconductor layer provided on a substrate; a source electrode and a drain electrode connected to the semiconductor layer; and a gate electrode provided to face the semiconductor layer with an insulating layer interposed therebetween. There,
Applying a partition material on the substrate;
Forming a first recess in the partition wall material, the width of which is smaller than the flying diameter of the functional liquid discharged using a droplet discharge method;
A step of forming, in the partition material, a second recess provided in a shape having a width equal to or larger than the flying diameter of the functional liquid and having an arc at least at a part of the outer periphery, connected to the first recess; ,
Disposing the functional liquid in the second recess;
Forming a second pattern in the second recess by the functional liquid, and forming a first pattern connected to the second pattern in the first recess by a capillary phenomenon of the functional liquid. A device manufacturing method. A device manufacturing method comprising: a semiconductor layer provided on a substrate; a source electrode and a drain electrode connected to the semiconductor layer; and a gate electrode provided to face the semiconductor layer with an insulating layer interposed therebetween. There,
Applying a partition material on the substrate;
Forming a drain electrode groove in the partition material, the width of which is smaller than the flying diameter of the functional liquid ejected using the droplet ejection method;
A step of forming a drain electrode auxiliary groove portion provided in a shape having a width equal to or larger than the flying diameter of the functional liquid and having an arc on at least a part of the outer periphery with the drain electrode groove portion in the partition material. When,
Disposing a functional liquid in the drain electrode auxiliary groove,
Forming a drain electrode auxiliary portion in the drain electrode auxiliary groove portion by the functional liquid, and forming a drain electrode connected to the drain electrode auxiliary portion in the drain electrode groove portion by capillary action of the functional liquid. A device manufacturing method characterized by the above. A device manufacturing method comprising: a semiconductor layer provided on a substrate; a source electrode and a drain electrode connected to the semiconductor layer; and a gate electrode provided to face the semiconductor layer with an insulating layer interposed therebetween. There,
Applying a partition material on the substrate;
Forming a gate electrode groove in the partition material having a width smaller than the flying diameter of the functional liquid discharged using a droplet discharge method;
Forming the partition wall material by connecting a gate electrode auxiliary groove portion having a width equal to or larger than the flying diameter of the functional liquid and having an arc shape in at least a part of the outer periphery to the gate electrode groove portion. When,
Forming a gate wiring groove portion having a width equal to or larger than a flying diameter of the functional liquid in the partition material, and connecting the gate electrode groove portion;
Disposing a functional liquid in the gate electrode auxiliary groove,
Disposing a functional liquid in the gate wiring trench,
A gate electrode auxiliary portion is formed in the gate electrode auxiliary groove portion by the functional liquid, a gate electrode wiring is formed in the gate wiring groove portion by the functional liquid, and the gate electrode is formed in the gate electrode groove portion by capillary action of the functional liquid. And a step of forming a gate electrode connected to the auxiliary portion and the gate electrode wiring. A device comprising: a semiconductor layer provided on a substrate; a source electrode and a drain electrode connected to the semiconductor layer; and a gate electrode provided to face the semiconductor layer with an insulating layer interposed therebetween,
Applying a partition material on the substrate;
Forming a source electrode groove in the partition material having a width smaller than the flying diameter of the functional liquid discharged using a droplet discharge method;
A step of forming, in the partition material, a source electrode auxiliary groove portion having a width equal to or larger than the flying diameter of the functional liquid and having a circular arc at least at a part of the outer periphery, connected to the source electrode groove portion. When,
A step of forming a source wiring groove part having a width equal to or larger than the flying diameter of the functional liquid connected to the source electrode groove part in the partition material;
Arranging a functional liquid in the source electrode auxiliary groove,
Placing a functional liquid in the source wiring trench,
A source electrode auxiliary part is formed in the source electrode auxiliary groove part by the functional liquid, a source electrode wiring is formed in the source wiring groove part by the functional liquid, and the source electrode is formed in the source electrode groove part by capillary action of the functional liquid. And a step of forming a source electrode connected to the auxiliary part and the source electrode wiring.   9. The area where the source electrode and the semiconductor layer overlap in a plane is substantially equal to the area where the drain electrode and the semiconductor layer overlap in a plane. Device manufacturing method.

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