JP2007048932A - Positioning apparatus, exposure apparatus, and device manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a positioning apparatus for accurately positioning devices installed in different vacuum chambers to predetermined relative positions, moreover a positioning apparatus for accurately positioning an exposure device body and a light source device of the exposure apparatus used for manufacturing a semiconductor device to the predetermined relative positions, and an exposure apparatus comprising such a positioning apparatus, and also to provide a device manufacturing method using the exposure apparatus. <P>SOLUTION: In the positioning apparatus, at least either of a first apparatus and a second apparatus is accommodated in the chamber, and a relative positioning function is also provided between the first apparatus and the second apparatus. The relative position is measured as at least one degree of freedom between the first apparatus and the second apparatus. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

The present invention relates to an alignment apparatus that performs relative alignment between apparatuses installed in different vacuum chambers.
In particular, the present invention relates to an exposure apparatus main body of an exposure apparatus used for manufacturing a semiconductor, an alignment apparatus for a light source apparatus, an exposure apparatus including the alignment apparatus, and a device manufacturing method using the exposure apparatus.

Generally, reduction projection exposure using ultraviolet rays is performed as a printing (lithography) method for manufacturing fine semiconductor elements such as semiconductor memories and logic circuits.
The minimum dimension that can be transferred by reduction projection exposure is proportional to the wavelength of light used for transfer and inversely proportional to the numerical aperture of the projection optical system.
For this reason, the wavelength of light used for transferring a fine circuit pattern has been reduced. For example, the wavelength of ultraviolet light used for mercury lamp i-line (wavelength 365 nm), KrF excimer laser (wavelength 248 nm), ArF excimer laser (wavelength 193 nm) is becoming shorter.
However, semiconductor elements are rapidly miniaturized, and there is a limit in lithography using ultraviolet light.
Therefore, a reduction projection exposure system using extreme ultraviolet light (EUV light) having a wavelength of about 10 to 15 nm, which is shorter than ultraviolet light, has been developed in order to efficiently burn a very fine circuit pattern of less than 0.1 μm. Has been.

A reduced projection exposure apparatus using this extreme ultraviolet light (EUV light) will now be described with reference to the schematic configuration diagram of FIG.
For example, a laser plasma light source 801 is used as the EUV light source.
A target material supplied from a target supply device 804 placed in a vacuum vessel 800 is irradiated with high-intensity pulsed laser light from a laser plasma light source 801 through a condenser lens 803 to generate high-temperature plasma 802.
For example, EUV light having a wavelength of about 13 nm emitted from the plasma 802 is used.
As the target material, metal particles, inert gas, droplets, or the like are used, and the target material is supplied into the vacuum container 800 by a target supply device 804 such as a gas jet.
In order to increase the average intensity of EUV light emitted from the target, the repetition frequency of the pulse laser should be high, and it is usually operated at a repetition frequency of several kHz.
In addition, a condensing mirror is provided to efficiently use EUV light emitted from the target. An optical element used for total reflection such as a condenser mirror is composed of a multilayer mirror in which about 40 pairs of Mo and Si films are laminated.
The illumination optical system 805 includes a plurality of multilayer films or oblique incidence mirrors, an optical integrator 806, and the like.
The optical integrator 806 has a role of uniformly illuminating the mask with a predetermined numerical aperture.

The EUV light supplied from the illumination optical system 805 is reflected by a reticle 809 which is an original, and is reduced to about ¼ by a projection optical system 810 including four to six multilayer mirrors, and a resist-coated wafer. 811 is irradiated.
Reticle 809 and wafer 811 are held by reticle stage 812 and wafer stage 813, respectively. In addition, it has a mechanism for precisely synchronizing the position by the alignment optical system 815 and synchronously scanning at a speed ratio proportional to the reduction magnification in a state of being precisely focused by the focus detection optical system 814.
In this manner, the operation of synchronously scanning the reduced projection image of the reticle 809 formed on the wafer 811 is repeated (step-and-scan).
In this way, the transfer pattern of the reticle 809 is transferred to the entire surface of the wafer 811.
Laser plasma 802, which is one method of EUV light source, generates EUV light by irradiating a target with high-intensity pulsed laser light.
As a target, a system using a gas such as xenon, a droplet, or a cluster and a system using a metal such as tin or lithium have been tried.
In addition, scattered particles called debris are generated together with EUV light, which contaminates and damages the optical element and causes a decrease in reflectance.
In order to alleviate the influence, a method of flowing an inert gas such as helium or argon as a buffer gas has been studied.
In the light emitting part, xenon as a target and helium as a buffer gas are indispensable, so that the pressure is considered to be about 100 Pa.
On the other hand, in order to maintain the performance such as the reflectance of the optical element downstream from the light source, it is necessary to maintain a vacuum degree of about 1E-5 Pa.
Here, in order to provide a pressure difference, it is common to perform differential evacuation using an orifice, and the exposure apparatus body downstream of the light source and the light source is housed in separate vacuum chambers and coupled by the orifice. The
Therefore, it is necessary to align the light source and the exposure apparatus main body separated by the partition of the vacuum chamber through the vacuum chamber.

Further, for example, Japanese Patent Application Laid-Open No. 2003-142363 proposes a relative alignment apparatus for a reticle and an apparatus main body in an exposure apparatus.
JP 2003-142363 A

However, high accuracy is required for alignment between the light source device and the exposure apparatus main body, and the alignment accuracy through the vacuum chamber satisfies the requirements in consideration of processing accuracy of the chamber partition walls and deformation due to a pressure difference inside and outside the chamber. I can't.
Further, since the exposure apparatus main body that requires precise adjustment is installed on the damper, the relative position of the exposure apparatus main body and the vacuum chamber changes depending on the state of the damper.
For this reason, it is necessary to always measure and align the relative position between the light source device and the exposure apparatus main body.
Accordingly, an object of the present invention is to provide an alignment apparatus that performs alignment so that apparatuses installed in different vacuum chambers are accurately at a predetermined relative position.
Furthermore, an alignment apparatus that performs alignment so that the exposure apparatus main body and the light source apparatus of the exposure apparatus used for manufacturing a semiconductor are accurately in a predetermined relative position, an exposure apparatus including the alignment apparatus, and device manufacturing using the exposure apparatus It aims to provide a method.

In order to achieve the above object, an alignment apparatus according to the present invention includes at least one of a first apparatus and a second apparatus housed in a chamber, and the first apparatus and the second apparatus. Is an alignment apparatus having a relative alignment function.
Further, the relative position of the first device and the second device is measured for at least one degree of freedom.
Furthermore, the alignment apparatus of the present invention is provided with a light transmission part in at least a part of the partition wall of the chamber, and relative to the first apparatus and the second apparatus by optical means through the light transmission part. The position is measured.
Furthermore, the alignment apparatus of the present invention is a light quantity sensor supported by the second device for irradiating light emitted from the light source supported by the first device to the second device through the light transmission part. Receive light. Furthermore, the amount of positional deviation between the first device and the second device is measured from the amount of light received by the light quantity sensor.
Furthermore, the alignment apparatus of the present invention is configured to capture a light beam irradiated from the laser generating device supported by the first device to the second device through the light transmission unit, by the second device. Light is received by the device. Furthermore, the relative position between the first device and the second device is measured from the irradiation position of the light beam detected by the imaging device.

Furthermore, the alignment device of the present invention measures the distance between the first device and the second device through the light transmission part using an optical distance measuring sensor supported by the first device. It is characterized by doing.
Furthermore, the alignment apparatus of the present invention includes a displacement transmission mechanism in which the first apparatus is installed in the chamber and the displacement of the first apparatus is transmitted outside the chamber. Furthermore, the relative position of the first device and the second device is measured outside the chamber.
Furthermore, the alignment apparatus of the present invention includes a displacement transmission unit that is installed in the chamber, the first device is fixed to the first device, and is coupled to the displacement transmission unit via a bellows. And a joint part supported by the
Furthermore, it has a function to transmit a displacement of the first device to the outside of the chamber.
Furthermore, in the alignment apparatus of the present invention, in the exposure apparatus in which the first apparatus is an exposure apparatus main body and the second apparatus is a light source apparatus, light emitted from a light emitting point is used for exposure light and measurement using an aperture. Divide into light.
Furthermore, the relative position of the exposure apparatus main body and the light source device is measured using the measurement light.
Furthermore, the alignment device of the present invention issues a warning according to the amount of positional deviation between the first device and the second device, using the relative position information acquired by the relative position measurement. Furthermore, it has a function of stopping the operation of at least one of the first device and the second device.

Furthermore, the alignment apparatus of the present invention uses the relative position information acquired by the relative position measurement. Further, the 6-degree-of-freedom misalignment of the first device and the second device is always corrected so that the relative position between the first device and the second device matches the design relative position. It is characterized by that.
Furthermore, the alignment apparatus of the present invention includes a drive mechanism with a slow response speed that displaces the entire apparatus of the first apparatus or the second apparatus in the relative position correction. And a plurality of drive mechanisms having high response speeds for displacing a part of the first device or the second device, wherein the drive mechanisms are selectively used according to required response speeds.
Furthermore, the alignment apparatus of the present invention is characterized in that the chamber is a vacuum chamber.
Furthermore, the exposure apparatus of the present invention includes an exposure apparatus main body that exposes a wafer with a pattern on a reticle stored in a first vacuum chamber, and a second vacuum chamber that supplies exposure light to the exposure apparatus main body. A light source device housed therein.
Further, a relative position between the exposure apparatus main body and the light source device is measured.
Furthermore, an alignment device is provided for correcting the relative position of the exposure apparatus main body and the light source device so that the optical path from the light source device to the reticle becomes an ideal optical path based on the relative position measurement result. It is characterized by.
Furthermore, the device manufacturing method of the present invention includes a step of projecting and exposing a target object using the exposure apparatus, and a step of performing a predetermined process on the target object subjected to the projection exposure.

According to the alignment apparatus of the present invention, at least one of the first apparatus and the second apparatus is housed in the chamber, and has a relative alignment function between the first apparatus and the second apparatus. .
Furthermore, in order to measure the relative position of the first device and the second device for at least one degree of freedom, alignment is performed without going through the vacuum chamber, and devices installed in different vacuum chambers can be accurately It becomes a predetermined relative position.
Furthermore, according to the exposure apparatus of the present invention, the exposure apparatus main body and the light source apparatus, which are housed in different vacuum chambers, respectively, measure the relative position between the exposure apparatus main body and the light source apparatus, and the relative position. Based on the measurement result, the relative position of the exposure apparatus main body and the light source device can be corrected so that the optical path from the light source device to the reticle becomes an ideal optical path.
According to the device manufacturing method of the present invention, since the optical axis shift due to the positional shift between the exposure apparatus main body and the light source apparatus is always corrected, it is possible to prevent the performance of the exposure apparatus from deteriorating.

  Hereinafter, the present invention will be described with reference to the drawings based on the embodiments.

First, with reference to the schematic block diagram of FIG. 1, the alignment apparatus of Example 1 of this invention is demonstrated.
The first embodiment of the present invention is applied to a relative alignment apparatus for a light source device and an exposure apparatus main body equipped in an EUV exposure apparatus.
The vacuum chamber VC1 is a chamber in which the light source device 110 is installed, and has a function of maintaining the pressure at about 100 Pa.
The light source device 110 is a light source that generates EUV light, and has a function of introducing the EUV light into the exposure apparatus main body 100.
The target supply system 112 is arranged in the vacuum chamber VC1 and supplies xenon as a target to the light source device 110.
The pulse laser PL is irradiated from a laser light source (not shown) to a target supplied by the target supply system 112 via a condensing optical system (not shown).
At the light emitting point 113, the target is irradiated with a pulse laser PL to excite the target into a high-temperature plasma state, and when the plasma cools, light in the wavelength band from infrared to ultraviolet and EUV light, etc. Radiated in the direction.
The condensing mirror 114 has a function of condensing EUV light from the light emitted from the light emitting point 113 and introducing it into the exposure apparatus main body 100.
The optical axis 117 is an axis that connects both the focal points of the condensing mirror 114. The coordinate system in the figure takes the Z axis in the direction of the optical axis 117, the X and Y axes in a plane perpendicular to the optical axis, and The vertical direction is the X axis.
A condenser mirror 114 is supported on the surface plate 111 on the light source device 110. The vacuum chamber VC2 is a chamber in which the exposure apparatus main body is accommodated, and has a function of maintaining the pressure at about 1E-5 Pa.
The vacuum chamber VC1 and the vacuum chamber VC2 are connected by an orifice in order to maintain a pressure difference.

The exposure apparatus main body 100 constitutes a main body portion and has a function of exposing a pattern on a reticle onto a wafer using EUV light introduced from the light source device 110.
The illumination optical system 120 has a function of propagating EUV light introduced into the vacuum chamber VC2 to illuminate the mask, and includes a plurality of mirrors, an optical integrator, and an aperture.
The optical integrator has a role of uniformly illuminating the reticle with a predetermined numerical aperture.
The aperture is provided at a position conjugate with the reticle, and limits an area illuminated by the reticle surface to an arc shape.
The reflective reticle 130 has a predetermined pattern and selectively reflects EUV light illuminated by the illumination optical system.
The reticle chuck 131 holds the reticle. The reticle stage 132 has a function of driving the reticle 130 to a desired position and angle.
Projection optical system 140 has a function of reducing and projecting EUV light reflected by reticle 130 onto a resist-coated wafer.
The wafer chuck 141 has a function of holding the wafer.
The wafer stage 142 has a function of driving the wafer 140 to a desired position and angle.
The surface plate 101 on the exposure apparatus main body 100 supports the optical system of the exposure apparatus main body 100.
The active damper 160 functions to support the surface plate 101 on the exposure apparatus main body 100 and the surface plate 111 on the light source device 110, insulate vibrations from the outside, and correct the position and angle of the surface plate 101 and the surface plate 111. Have
The light transmissive window 170 is installed in both the vacuum chamber VC1 and the vacuum chamber VC2.
The simple light source 171 is supported by the surface plate 101 on the exposure apparatus main body 100 and has a function of irradiating light to the surface plate 111 on the light source device through a light transmissive window 170.
The simple light source 171 may be anything as long as it has a function of irradiating light. For example, an LED, a halogen lamp, a fluorescent lamp, an incandescent lamp, a HeNe laser, a semiconductor laser, and the like are conceivable.
The light amount sensor 172 is supported by the surface plate 111 on the light source device 110 and has a function of detecting the amount of light emitted from the simple light source 171.
The light quantity sensor 172 is made of, for example, a photodiode, a phototransistor, a CMOS, a CCD, or the like that can detect the quantity of irradiated light.

In the first embodiment, a method of aligning the exposure apparatus main body 100 and the light source device 110 through a light transmissive window provided in the partition walls of the vacuum chamber VC1 and the vacuum chamber VC2 will be described.
In the first embodiment, the surface plate 101 on the exposure apparatus main body 100 and the surface plate 111 on the light source device 110 are used as the relative position measurement standards.
Light emitted from the simple light source 171 supported by the surface plate 101 on the exposure apparatus main body 100 is guided to the end face of the vacuum partition wall by an optical fiber (not shown).
The guided light is applied to the surface plate 111 on the light source device 110 through a light transmissive window 170 provided in the partition walls of the vacuum chamber VC1 and the vacuum chamber VC2.
Light applied to the surface plate 111 on the light source device 110 enters the light amount sensor 172. The degree of positional deviation between the exposure apparatus main body 100 and the light source device 110 can be detected from the amount of light received by the light quantity sensor 172.
Further, the axial direction of a plurality of shifts can be known from the mounting direction of the simple light source 171 and the mounting direction of the sensor. In the first embodiment, two X and Y axis directions and one X and Z axis direction can be obtained. Misalignment is detected.
If the amount of received light is equal to or greater than a certain value, the mutual positional deviation is within an allowable range. When it deviates beyond the allowable range, a warning is issued and the operation can be temporarily suspended.
It can also be used for adjustment during installation and for checking when there is an abnormality.
In the first embodiment, the simple light source 171 is provided on the exposure apparatus main body 100 side and the light quantity sensor 172 is provided on the light source apparatus 110 side. However, the simple light source 171 may be provided on the light source apparatus 110 side and the light quantity sensor 172 may be provided on the exposure apparatus main body 100 side. good.

When it is desired to perform highly accurate alignment, the embodiment of the present invention shown in FIGS. 2, 3 and 4 is applied when the relative position is constantly monitored and correction is performed.
In the embodiment of the present invention shown in FIGS. 2, 3 and 4, the exposure apparatus main body 100 is partially omitted for simplicity.
First, a second embodiment of the present invention shown in FIG. 2 will be described.
The adjustment mechanism 115 is a mechanism that supports the condenser mirror 114, and has a function of adjusting the position and angle of the condenser mirror 114 during installation.
The driving mechanism 116 is a driving unit supported by the surface plate 111 on the light source device, and has a function of correcting the position and angle of the condensing mirror 114.
The mirror 121 is a part of the illumination optical system 120.
The adjustment mechanism 122 supports the mirror 121 and has a function of adjusting the position and angle of the mirror 121 during installation.
The driving mechanism 123 is a driving unit supported by the surface plate 101 on the exposure apparatus main body, and has a function of correcting the position and angle of the mirror 121.
The laser generator 201 is supported by a surface plate 111 on the light source device 110, and includes a laser that generates a thin beam such as a HeNe laser or a semiconductor laser. A light beam 202 is a light beam emitted from the laser generator 210.

In the second embodiment, when the exposure apparatus is installed, the light beam 202 and the optical axis 117 are adjusted by the adjusting mechanism 115 of the condensing mirror 114 and the adjusting mechanism 122 of the illumination system optical element 121 so as to be parallel. However, if the relative positional relationship between the light beam 202 and the optical axis 117 is known, it is not necessarily parallel.
The aperture 203 is supported by the surface plate 111 on the light source device 110 and has a function of removing wavefront noise, distortion, and the like of the speed of light 202.
The half mirror 204 is supported by the surface plate 101 on the exposure apparatus main body 100 and has a function of reflecting a part of the light beam 202 and transmitting the rest.
A light beam 205 is a light beam reflected by the half mirror 204. A light beam 208 is a light beam transmitted through the half mirror 204.
The mirror 207 is supported by the surface plate 101 on the exposure apparatus main body 100 and has a function of reflecting the light beam 208.
The imaging device 206 is supported by the surface plate 101 on the exposure apparatus main body 100 and has a function of detecting the irradiation position in the X and Z planes of the incident light beams 205 and 208.
The imaging device 206 is made of, for example, PSD, CMOS, CCD, or the like that can detect an irradiation position in a two-dimensional plane of light.
According to the alignment apparatus of the second embodiment, the position and angle of the condensing mirror 114, the position of the light emitting point 113, and the position and angle of the surface plate 111 on the light source device 110 are designed so that the optical axis 117 is designed light. Each can be corrected to match the axis.
Further, the position and angle of the illumination system optical element 121 and the position and angle of the surface plate 101 on the exposure apparatus main body 100 can be corrected so that the optical axis 117 matches the designed optical axis. .

For the correction of the relative position, a driving mechanism that is driven in accordance with a required response speed is properly used.
For example, for a displacement with a high frequency that requires a response speed, the drive mechanism 123 and the drive mechanism 116 are driven, and the irradiation point of the pulse laser PL is changed.
Thereby, the positions and angles of the illumination system optical element 121, the condensing mirror 114, and the light emitting point 113 are corrected.
For a low frequency displacement that does not require a response speed, the active mount 160 is driven to correct the position and angle of the surface plate 101 on the exposure apparatus body and the surface plate 111 on the light source device.
The light beam 202 emitted from the laser generator 201 passes through the aperture 203 and the window 170, is irradiated onto the surface plate 101 on the exposure apparatus main body, and enters the half mirror 204.
The light beam 205 reflected by the half mirror 204 enters the imaging device 206. On the other hand, the light beam 208 transmitted through the half mirror 204 is reflected by the mirror 207 in the traveling direction and enters the imaging device 206.
With the configuration of this second embodiment, translation in the X-axis direction and rotation θy around the Y-axis can be obtained from the difference between the X coordinate and the X coordinate of the irradiation position of the light beam 205 and the light beam 208 detected by the imaging device 206.
Further, translation in the Y-axis direction and rotation θx around the X-axis are obtained from the difference between the Z coordinate and the Z coordinate of the irradiation position of the light beam 205 and the light beam 208 detected by the imaging device 206.
In the alignment device, it is possible to always correct the relative position by the driving mechanism in accordance with the relative position measurement result of four degrees of freedom.

Further, when it is desired to measure the relative positions of six degrees of freedom of translation in the X, Y, and Z directions and rotations θx, θy, and θz around the X, Y, and Z axes, the third embodiment of the present invention shown in FIG. The configuration is as follows.
A third embodiment of the present invention shown in FIG. 3 will be described below.
In the third embodiment, in addition to the light beam 202, a light beam not parallel to the light beam 202 is irradiated from the surface plate 111 on the light source device to the surface plate 101 on the exposure apparatus main body 100, thereby increasing the degree of freedom of relative position measurement.
The laser generator 301 is supported by the surface plate 111 on the light source device 110, and is composed of a laser that generates a thin beam such as a HeNe laser or a semiconductor laser, like the laser generator 201.
A light beam 302 is a light beam emitted from the laser generator.
The mirror 303 and the mirror 304 are supported by the surface plate 111 on the light source device 110 and the surface plate 101 on the exposure apparatus main body 100, respectively.
The mirror 303 and the mirror 304 have a function of reflecting the light beam 302 and changing its traveling direction.
The imaging device 305 is supported by the surface plate 101 on the exposure apparatus main body 100 and detects the irradiation position of the light beam 302 in the X and Y planes, and the imaging device 305 can detect the irradiation position of the light in the two-dimensional plane. For example, it consists of PSD, CMOS, CCD, etc.
The light beam 302 irradiated from the laser generator 301 enters the mirror 303.
The light beam 302 incident on the mirror 303 is reflected by the mirror 303, passes through the window 170, and enters the mirror 304 supported by the surface plate 101 on the exposure apparatus main body 100.
The traveling direction of the light beam 302 immediately after being reflected by the mirror 303 may be any direction as long as it is not parallel to the light beam 202. Thereafter, the light beam 302 is reflected by the mirror 304 and irradiated onto the imaging device 305.
With the configuration of this third embodiment, in addition to the degree of freedom of measurement in the second embodiment of FIG. 2, translation in the Z-axis direction can be measured from the Y coordinate of the irradiation position of the light beam 302 incident on the imaging device 305. It becomes.
Further, the rotation θz around the Z axis can be measured from the X coordinates of the irradiation positions of the light beams 205 and 208 incident on the imaging device 206 and the light beam 302 incident on the imaging device 305.
In the third embodiment, the laser generator 301 is provided on the light source device 110 side and the imaging device is provided on the exposure device main body 100 side. However, the laser generator 301 may be provided on the exposure device 100 main body side and the imaging device is provided on the light source device 110 side. Good.
Although the relative position measurement in the combination of the laser generator 301 and the image pickup apparatus has been described, anything may be used as long as the relative position can be measured through the light transmissive window.

Next, a fourth embodiment of the present invention using a distance measuring sensor that can measure the distance to an object through a light transmissive window will be described with reference to FIG.
The distance measuring sensor 401 is supported by the surface plate 111 on the light source device 110 and is a sensor that can measure the distance from the surface plate 101 on the exposure apparatus main body 100 through the window 170. The distance measuring sensor 401 focuses and measures a mark provided on the surface plate 101 on the interferometer or the exposure apparatus main body 100.
With this configuration of the fourth embodiment, for example, a total of six distances are measured: three surfaces perpendicular to the Z-axis direction, two surfaces perpendicular to the Y-axis direction, and one surface perpendicular to the X-axis direction. For example, it is possible to measure the relative positions of six degrees of freedom of translation in the X, Y, and Z directions and rotations θx, θy, and θz around the X, Y, and Z axes.
In the fourth embodiment, the side distance sensor 401 is supported by the surface plate 111 on the light source device 110, but may be supported by the regular plate 101 on the exposure apparatus 100 main body.
Further, the embodiments of the exposure apparatus and the light source apparatus have been described, but the present invention can be applied to any vacuum apparatus alignment.

The relative position can also be measured by transmitting the displacement of the measurement reference to the outside of the vacuum chamber by mechanical means.
Referring to FIG. 5, alignment apparatus for exposure apparatus main body 100 and light source apparatus 110 when the displacement of surface plate 101 on exposure apparatus main body 100 is mechanically transmitted into vacuum chamber VC1 in which light source apparatus 110 is housed. Embodiment 5 of the present invention will be described.
The displacement transmitting unit 501 is a displacement transmitting unit fixed to the surface plate 101 on the exposure measure main body 100.
The part to be measured 504 is placed in a vacuum chamber VC1 which is a displacement transmission destination of the surface plate 101 on the exposure measure main body 100.
The joint 502 couples the displacement transmission part 501 and the part to be measured 504 placed in different vacuum chambers VC1 and VC2.
Bellows 503 is coupled to joint 502, vacuum chamber VC1, and vacuum chamber VC2.
Therefore, the joint 502 can freely move with respect to the partition wall between the vacuum chamber VC1 and the vacuum chamber VC2, and the vacuum chamber VC1 and the vacuum chamber VC2 can maintain different pressures.
The distance measuring sensor 505 is supported by the surface plate 111 on the light source device 110 and includes, for example, an eddy current sensor, a capacitance sensor, and a laser interferometer.
Although the distance measuring sensor is used in the fifth embodiment, any measuring method may be used as long as the relative position between the measured part 504 and the surface plate 111 on the light source device 110 can be measured.
With this configuration of the fifth embodiment, for example, a total of six distances are measured including three surfaces perpendicular to the Z-axis direction, two surfaces perpendicular to the Y-axis direction, and one surface perpendicular to the X-axis direction. . As a result, it is possible to measure the relative positions of six degrees of freedom of translation in the X, Y, and Z directions and rotations θx, θy, and θz around the X, Y, and Z axes.
In the fifth embodiment, the displacement of the surface plate 101 on the exposure apparatus main body 100 is transmitted into the vacuum chamber VC1 in which the light source device 110 is accommodated. However, the same applies if the displacement of the surface plate 111 on the light source device 110 is transmitted into the vacuum chamber VC2 in which the exposure apparatus main body 100 is housed.
Although the exposure apparatus and the light source apparatus are taken as examples, the present invention can be applied to any vacuum apparatus alignment.

In the above-described first and second embodiments of the present invention, the surface plate 101 on the exposure apparatus main body 100 and the surface plate 111 on the light source device 110 are used as measurement standards, but third and fourth measurement standards are provided. A relative position between three or more metrics may be measured.
With reference to FIG. 6, a sixth embodiment of the alignment apparatus according to the present invention in which a third measurement reference is provided outside the vacuum chamber VC1 and the vacuum chamber VC2 will be described.
Reference numeral 601 is a constant standard installed outside the vacuum chambers VC1 and VC2. In this embodiment, it is installed on an active damper 160 installed on the floor.
The relative position between the surface plate 101 and the measurement reference 601 on the exposure apparatus and the relative position between the surface plate 111 and the measurement reference 601 on the light source apparatus may be any method.
In this embodiment, the distance measuring sensor 401 through the light-transmitting window 170 has three surfaces perpendicular to the Z-axis direction and two surfaces perpendicular to the Y-axis direction on the measurement reference 601 from the surface plate 101 on the exposure apparatus. Measure the distance of a total of six locations, one location (not shown) perpendicular to the X-axis direction. Furthermore, a total of three surfaces perpendicular to the Z-axis direction on the measurement standard 601 from the surface plate 111 on the light source device, two surfaces perpendicular to the Y-axis direction, and one surface (not shown) perpendicular to the X-axis direction. Measure the distance at six locations.
With this configuration, the relative position between the surface plate 101 on the exposure apparatus and the measurement reference 601 and the relative position between the measurement reference 601 and the surface plate 111 on the light source device can be measured. From here, the surface plate on the exposure apparatus can be measured. 101 and the relative position of the surface plate 111 on the light source device are obtained.

In aligning the exposure apparatus main body and the light source device, a method of performing relative alignment using a part of light introduced from the light source device is also conceivable.
Referring to FIG. 7, in the alignment of the exposure apparatus main body and the light source apparatus of the EUV exposure apparatus, an alignment apparatus using a part of the EUV light introduced from the light source for the alignment of the exposure apparatus main body and the light source apparatus. Example 7 of the present invention will be described.
The aperture 701 is supported by the surface plate 101 on the exposure apparatus main body 100, and has a function of dividing light introduced from the light source device 110 into light used for exposure and light used for relative alignment.
EUV light 702 is EUV light divided by the aperture 701 and is used for relative alignment. The mirror 703 is supported by the surface plate 101 on the exposure apparatus main body 100. The mirror 603 has a function of reflecting the EUV light 702 and guiding it to the imaging apparatus.
The imaging device 704 is supported by the surface plate 101 on the exposure apparatus main body 100, and is composed of a device that can detect the intensity distribution in the two-dimensional plane of the EUV light 602 irradiated by CMOS, CCD, or the like.
The EUV light 702 introduced from the light source device 110 into the exposure apparatus main body 100 is split by the aperture 701 into light used for exposure and light 702 used for relative alignment.
The traveling direction of the EUV light 702 is changed by the mirror 703, and the imaging device 704 is irradiated with the EUV light 702.
With the configuration of the seventh embodiment, the deviation of the optical axis 117 from the designed optical axis can be measured from the intensity distribution of the EUV light 702 detected by the imaging device 704.
From this measurement result, as in the first and second embodiments, the position and angle of the condensing mirror 114, the position of the light emitting point 113, and the position and angle of the surface plate 111 on the light source device are always corrected, so that precise relative Alignment is possible.
Furthermore, precise relative alignment is possible by always correcting the position and angle of the illumination system optical element 121 and the position and angle of the surface plate 101 on the exposure apparatus main body.

Next, with reference to FIG. 9 and FIG. 10, an eighth embodiment of the present invention of a device manufacturing method using the exposure apparatus will be described.
FIG. 9 is a flowchart for explaining how to fabricate devices (ie, semiconductor chips such as IC and LSI, LCDs, CCDs, and the like).
Here, the manufacture of a semiconductor chip will be described as an example.
In step 1 (circuit design), a device circuit is designed.
In step 2 (mask production), a mask on which the designed circuit pattern is formed is produced.
In step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon.
Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the mask and wafer.
Step 5 (assembly) is called a post-process, and is a process for forming a semiconductor chip using the wafer created in step 4, and includes processes such as an assembly process (dicing and bonding) and a packaging process (chip encapsulation). Including.
In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device created in step 5 are performed.
Through these steps, a semiconductor device is completed and shipped (step 7).

FIG. 10 is a detailed flowchart of the wafer process in Step 4.
In step 11 (oxidation), the surface of the wafer is oxidized.
In step 12 (CVD), an insulating film is formed on the surface of the wafer.
In step 13, an electrode is formed on the wafer.
In step 14 (ion implantation), ions are implanted into the wafer.
In step 15 (resist process), a photosensitive agent is applied to the wafer.
Step 16 (exposure) uses the exposure apparatus to expose a circuit pattern on the mask onto the wafer.
In step 17 (development), the exposed wafer is developed.
In step 18 (etching), portions other than the developed resist image are removed. In step 19 (resist stripping), the resist that has become unnecessary after the etching is removed. By repeatedly performing these steps, multiple circuit patterns are formed on the wafer.
According to the device manufacturing method of the present embodiment, it is possible to manufacture a higher quality device than before. Thus, the device manufacturing method using the exposure apparatus and the resulting device also constitute one aspect of the present invention.
Although the preferred embodiments of the present invention have been described above, the present invention is not limited to these embodiments, and various modifications and changes can be made within the scope of the gist thereof. For example, the alignment apparatus of the present invention may be applied to alignment between the exposure apparatus and the coater developer.

It is a cross-sectional block diagram of the alignment apparatus which concerns on Example 1 of this invention. It is a cross-sectional block diagram of the alignment apparatus which concerns on Example 2 of this invention. It is a cross-sectional block diagram of the alignment apparatus which concerns on Example 3 of this invention. It is a cross-sectional block diagram of the alignment apparatus which concerns on Example 4 of this invention. It is a cross-sectional block diagram of the alignment apparatus which concerns on Example 5 of this invention. It is a cross-sectional block diagram of the alignment apparatus which concerns on Example 6 of this invention. It is a cross-sectional block diagram of the alignment apparatus which concerns on Example 7 of this invention. It is a schematic block diagram of a reduction projection exposure apparatus using extreme ultraviolet light (EUV light). It is a flowchart for demonstrating device manufacture which concerns on Example 8 of this invention. 10 is a detailed flowchart of the wafer process in Step 4 shown in FIG. 9.

Explanation of symbols

VC1, VC2: Vacuum chamber PL: Pulse laser 100: Exposure apparatus main body 101, 111: Surface plate 110: Light source device 112: Target supply system 113: Light emitting point 114: Condensing mirror 115, 122: Adjustment mechanism 116, 123: Drive Mechanism 117: Optical axis 120: Illumination optical system 121: Optical element 130: Reticle 131: Reticle chuck 132: Reticle stage 140: Projection optical system 150: Wafer 151: Wafer chuck 152: Wafer stage 160: Active damper 170: Window 171: Simple light source 172: Light quantity sensor 201, 301: Laser generator 202, 205, 208, 302, 702: Light beam 203, 701: Aperture 204: Half mirror 206, 305, 704: Imaging device
207, 303, 304, 703: Mirror 401: Optical distance sensor 501: Displacement transmission member 502: Joint 503: Bellows 504: Member to be measured 505: Distance sensor 601: Measurement standard

Claims (14)

An alignment device in which at least one of the first device and the second device is housed in a chamber and has a relative alignment function between the first device and the second device,
An alignment apparatus for measuring a relative position between the first apparatus and the second apparatus for at least one degree of freedom. A light transmission part is provided on at least a part of the partition wall of the chamber,
The alignment apparatus according to claim 1, wherein the relative position of the first device and the second device is measured by optical means through the light transmitting portion. The light emitted from the light source supported by the first device to the second device through the light transmission unit is received by a light amount sensor supported by the second device,
The alignment apparatus according to claim 1 or 2, wherein a positional deviation amount between the first device and the second device is measured from the amount of light received by the light amount sensor.   The light beam irradiated from the laser generator supported by the first device to the second device through the light transmission unit is received by the imaging device supported by the second device and detected by the imaging device. The alignment apparatus according to claim 1, wherein a relative position between the first device and the second device is measured from the irradiated position of the luminous flux.   The distance between the first device and the second device is measured through the light transmission part using an optical distance measuring sensor supported by the first device. 2. The alignment apparatus according to 2.   The first device is installed in the chamber, and has a displacement transmission mechanism for transmitting the displacement of the first device to the outside of the chamber, and the first device and the second device outside the chamber. The alignment apparatus according to claim 1, wherein relative position measurement is performed.   A displacement transmission portion installed in the chamber and fixed to the first device; a joint portion coupled to the displacement transmission portion and supported by the chamber via a bellows; and the chamber 5. The alignment according to claim 4, further comprising: a measured portion that is coupled to the joint portion and that receives a relative position measurement, and has a function of transmitting the displacement of the first device to the outside of the chamber. apparatus. In the exposure apparatus in which the first apparatus is an exposure apparatus main body and the second apparatus is a light source apparatus,
The light emitted from the light emitting point is divided into exposure light and measurement light using an aperture, and the relative position between the exposure apparatus main body and the light source device is measured using the measurement light. The alignment apparatus according to claim 1.   Using the relative position information acquired by the relative position measurement, a warning is issued according to the amount of positional deviation between the first device and the second device, and at least either of the first device or the second device 9. The alignment apparatus according to claim 1, which has a function of stopping one of the operations.   Using the relative position information acquired by the relative position measurement, the first apparatus and the second apparatus are arranged so that the relative positions of the first apparatus and the second apparatus coincide with the designed relative positions. The alignment apparatus according to any one of claims 1 to 8, wherein a position shift of 6 degrees of freedom of the apparatus is always corrected.   11. The relative position correction according to claim 10, wherein a drive mechanism having a slow response speed for displacing the entire device of the first device or the second device and a part of the first device or the second device are displaced. 11. The alignment apparatus according to claim 1, further comprising: a plurality of drive mechanisms having fast response speeds, wherein the drive mechanisms are selectively used according to a required response speed.   The alignment apparatus according to claim 1, wherein the chamber is a vacuum chamber. An exposure apparatus main body that exposes a wafer with a pattern on a reticle stored in a first vacuum chamber;
In an exposure apparatus having a light source device housed in a second vacuum chamber that supplies exposure light to the exposure apparatus main body,
Measure the relative position between the exposure apparatus body and the light source device, and based on the relative position measurement result, the exposure apparatus body and the light source device so that the optical path from the light source device to the reticle is an ideal optical path. An exposure apparatus comprising an alignment device that corrects a relative position of a light source device. 14. A device manufacturing method comprising: projecting and exposing a target object using the exposure apparatus according to claim 13; and performing a predetermined process on the target object subjected to the projection exposure.

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