JP2007027703A - Method for manufacturing functional substrate, functional substrate and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a functional substrate in which particles of functional material are embedded in a substrate by a simple process to form a functional region. <P>SOLUTION: Diamond powder 21A is arranged on the substrate 10A comprising an aluminum, etc., and coated with a protecting material 30 to seal. This is set in a water W together with an explosive 41 to receive a shock wave SW by explosion of the explosive 41. The diamond powder 21A is accelerated at a high speed, and collides and penetrates the substrate 10A, and is embedded in at least a part in the thickness direction from the surface of the substrate 10A, to form a functional region. The obtained functional substrate is suitable as a heat radiating member, etc. Distribution of content of the diamond particles in the functional region is adjustable, for example, when it is decreased gradually in the thickness direction from the surface of the substrate 10A, a nonequilibrium functional region which is vary difficult to acquire in a conventional manufacturing method utilizing high temperature of casting and mixing of powders is acquired. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a method of manufacturing a functional substrate having a functional region such as a heat dissipation function, a functional substrate, and a semiconductor device using the functional substrate as a heat dissipation member.

  In addition to high thermal conductivity, a heat dissipation member (heat sink) of a semiconductor device is required to have as small a difference in thermal expansion coefficient as possible from Si and GaAs, which are constituent materials of a semiconductor element bonded thereto. In response to these requests, alloys of copper (Cu) and tungsten (W) or molybdenum (Mo), or composite materials of copper and diamond have been developed, and research has been conducted on their production methods. Has been done.

  For example, in Patent Document 1, copper or silver particles and tungsten or molybdenum particles are mechanically stirred and mixed to produce composite particles in which the surfaces of copper or silver particles are coated with tungsten or molybdenum particles. However, a method is described in which this is molded by injection molding and then sintered.

Patent Document 2 discloses that a mixture of diamond particles, Ag-Cu alloy powder and titanium (Ti) powder is pressure-molded and an Ag-Cu alloy is pressure-molded while being heated. Discloses a method in which a TiC layer is formed on the surface of diamond particles to improve adhesion, and an Ag-Cu alloy is infiltrated into the diamond particle gaps without load to form a dense body.
JP 2003-213360 A JP 2004-197153 A A. A. Mori, two others, “Materials Science Forum”, Trans Tech Publications Inc., Switzerland, 2004, 465-466, p. 307 B. Crossland, B., “Explosive Welding of Metals and Its Application”, Oxford University Press, UK, 1982, p. 95

  However, each of these conventional methods has a problem that the process is complicated. Further, in the obtained alloy or composite material, tungsten or molybdenum particles or diamond particles were uniformly dispersed in a copper or silver base material (see FIG. 1 of Patent Document 1 and FIG. 1 of Patent Document 2). ). The volume content of the dispersed particles is extremely high, such as several tens of vol%, and characteristics such as desired thermal conductivity or thermal expansion coefficient could not be obtained with a small amount of particles.

  The present invention has been made in view of such problems, and a first object thereof is to provide a method of manufacturing a functional substrate capable of forming a functional region such as heat dissipation in the substrate by a simple process. is there.

  A second object of the present invention is to provide a functional substrate that can obtain desired characteristics with a small amount of functional material and is suitable as a heat radiating member.

  A third object of the present invention is to provide a semiconductor device that can increase the thermal conductivity of the heat dissipating member and improve the heat dissipation efficiency.

  The method for producing a functional substrate according to the present invention includes a step of placing a powder of a functional material on the surface of a substrate having a predetermined thickness, and at least a part of the functional material in the thickness direction from the surface of the substrate by applying a shock wave. And a step of forming a functional region in the substrate.

  In this method of manufacturing a functional substrate, a functional material powder is placed on the surface of the substrate, and then a shock wave is applied, whereby the functional material powder is accelerated at high speed and collides with and penetrates the substrate. The functional region is formed by embedding the functional material in at least part of the thickness direction from the surface of the substrate. The distribution of the content of the functional material in the functional area can be adjusted, and can be made uniform from the surface of the substrate to the back, or gradually decreased from the surface of the substrate to the back. In addition, it is possible to realize a non-equilibrium functional region that has been extremely difficult by a manufacturing method using a high temperature such as conventional casting or mixing of powders. The substrate is not limited to a plate shape and may have any shape, and the planar shape is also arbitrary.

  The functional substrate according to the present invention has a functional region containing a functional material in at least part of the thickness direction from the surface of the substrate in the substrate, and the functional region has a functional material powder disposed on the surface of the substrate. It was formed by applying a shock wave to the powder.

  Since this functional substrate has a functional region formed using shock waves in the substrate, the distribution of the content of the functional material in the functional region can be adjusted. Therefore, by selecting diamond powder as the functional material, the thermal conductivity of the functional region can be dramatically increased with a small amount of functional material, and can be used as a heat radiating member of a semiconductor device.

  A semiconductor device according to the present invention includes a semiconductor element on a heat dissipation member, and the heat dissipation member is a metal plate, and the metal plate has a functional region including diamond particles at least partly in the thickness direction from the surface thereof. The functional region is formed by placing a diamond powder on the surface of a metal plate and then applying a shock wave to the powder.

  In this semiconductor device, the heat generated from the semiconductor element is efficiently dissipated through the functional region having high thermal conductivity including diamond powder.

  According to the method for manufacturing a functional substrate of the present invention, since shock waves are used, the functional region can be formed by embedding the powder of the functional material in the substrate with a simple process.

  Further, according to the functional substrate of the present invention, since the functional region formed using shock waves is included in the substrate, the distribution of the content of the functional material in the functional region can be adjusted. Therefore, by selecting diamond powder as the functional material, the thermal conductivity of the functional region can be dramatically increased with a small amount of functional material, and can be used as a heat radiating member of a semiconductor device.

  Furthermore, according to the semiconductor device of the present invention, since the functional substrate of the present invention is provided as a heat radiating member, the heat radiating member has high thermal conductivity and heat dissipation efficiency can be improved.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the figure, each component schematically shows the shape, size, and arrangement relationship to the extent that the present invention can be understood, and is different from the actual size.

  FIG. 1 shows the overall structure of a functional substrate according to an embodiment of the present invention, and FIGS. 2 and 3 show its cross-sectional structure. This functional substrate 10 is obtained by forming a functional region 20 including, for example, diamond particles 21 as a functional material in a substrate 10A, and is used as a heat radiating member such as a semiconductor device or a computer component.

  The substrate 10A is, for example, a metal plate having an overall thickness of 1.5 mm, and is made of at least one member selected from the group consisting of aluminum (Al), magnesium (Mg), and zinc (Zn). A region of about several hundred μm to 1 mm in the thickness direction from the surface of the substrate 10A in the substrate 10A is a functional region 20.

  The functional region 20 has a function corresponding to the functional material by changing characteristics such as strength, thermal conductivity, or thermal expansion coefficient of the base substrate 10A using the functional material. For example, when diamond particles 21 are included as a functional material, the functional region 20 has a high thermal conductivity due to diamond having the highest thermal conductivity of 2500 W / m · K among the substances, and has an excellent heat dissipation function. It will be a thing. The diameter of the diamond particle 21 is, for example, about 10 μm to 20 μm. The functional material may be SiC particles. In that case, the functional region 20 is made of extremely hard SiC having a Mohs hardness of 9.5, which is similar to that of diamond, so that the strength and stability are increased, and the heat resistance and wear resistance are excellent.

  As described later, the functional region 20 is formed by disposing diamond powder on the surface of the substrate 10A and then embedding the diamond powder in a part in the thickness direction from the surface of the substrate 10A by applying a shock wave. It is. Thereby, in this functional substrate 10, the distribution of the content of the diamond particles 21 in the functional region can be adjusted, and the thermal conductivity of the functional region 20 can be drastically increased by a small amount of the diamond particles 21. It can be done.

  As shown in FIG. 2, for example, the content of the diamond particles 21 in the functional region 20 is preferably uniform from the surface of the substrate 10A toward the thickness direction. In this way, the thermal conductivity can be further increased. Here, the term “uniform” includes not only the case of being completely uniform but also the case where there is some variation.

  Further, as shown in FIG. 3, it is also preferable that the content of the diamond particles 21 in the functional region 20 gradually decreases from the surface of the substrate 10A in the thickness direction. Thus, if the diamond particles 21 are concentrated on the surface of the substrate 10A, the heat dissipation efficiency from the surface of the substrate 10A can be made extremely high. Further, since the hardness of diamond is extremely high, the wear resistance performance of the surface can be improved.

  This functional substrate can be manufactured as follows, for example.

  First, as shown in FIG. 4, for example, diamond powder 21A having a diameter of, for example, about 10 μm to 20 μm is arranged on a substrate 10A made of aluminum (Al) having a thickness of 1.5 mm and covered with a protective material 30. At the same time, the periphery is sealed with a sealing layer 31.

  The protective material 30 is for preventing the dissipation (scattering, outflow, etc.) of the diamond powder 21A. For example, a metal plate such as aluminum (Al) having a thickness of 1.5 mm may be used similarly to the substrate 10A. it can. Since the shock wave SW is applied to the diamond powder 21A via the protective material 30, the thickness and mass of the protective material 30 must be set in consideration of the pressurizing condition of the diamond powder 21A by the shock wave SW. As the sealing layer 31, for example, a commercially available adhesive tape having a thickness of 0.5 mm can be used.

  Next, an explosive 41 is prepared as a shock wave generation source 40. The explosive 41 is, for example, a plate-shaped explosive initiated by an electric detonator 42, and is disposed on a support plate 42 made of PMMA (polymethyl methacrylate).

  Examples of the shock wave generation source 40 include an explosive that uses chemical energy and an electric pulse generator that uses electrical energy. Further, as a method using mechanical energy, there is a method of generating a shock wave SW by using a metal sphere driven into a liquid. Of course, the shock wave generation source 40 may generate the shock wave SW using energy other than the above.

  Subsequently, a water tank 50 filled with water W is prepared as the transmission medium M, and the diamond powder 21A sealed between the substrate 10A and the protective material 30 is placed in the water W of the water tank 50 together with the shock wave source 40. Install.

  The transmission medium M is for transmitting the pressure accompanying the shock wave SW (pressure transmission medium). The transmission medium M is, for example, a compressive fluid such as gas or liquid, or an elastic body such as rubber.

  The shock wave SW is a strong pressure change wave that propagates at high speed (speed exceeding the speed of sound) in the transmission medium M, and has the property of instantaneously and rapidly changing physical factors such as pressure, temperature, and density. Is. In particular, it is preferable to use the underwater shock wave SW using the water W as the transmission medium M. This is because the influence of heat applied to the sample can be reduced, and there is no fear of burning the sample. In addition, the underwater shock wave SW is said to have a long action time, and the pressure can be applied to the sample for a relatively long time. The pressure of the underwater shock wave SW acting on the protective material 30 on the diamond powder 21A according to the diamond powder 21A can be controlled relatively easily by changing the distance tw between the protective material 30 and the explosive 41. For example, about 1 GPa to 3 GPa is preferable. The distance tw is preferably 5 mm or more and 40 mm or less, for example.

  After that, the shock wave SW is generated by detonating the explosive 41. The generated shock wave SW propagates using the water W as a medium, and is given to the diamond powder 21 </ b> A through the protective material 30. As a result, the diamond powder 21A is accelerated at high speed, collides with and penetrates the substrate 10A, and is buried in a part in the thickness direction from the surface of the substrate 10A, so that the functional region 20 is formed. Thus, the functional substrate 10 shown in FIGS. 1 to 3 is completed.

  Thus, in this embodiment, since the shock wave SW is used, the diamond powder 21A can be embedded in the substrate 10A and the functional region 20 can be formed by a simple process. In addition, the distribution of the content of the diamond particles 21 in the functional region 20 can be adjusted. By selecting the diamond particles 21 as the functional material, the thermal conductivity of the functional region 20 can be drastically increased with a small amount of the diamond particles 21. It can be used suitably as a heat radiating member of a semiconductor device.

  Hereinafter, specific application examples of the functional substrate of the present invention will be described.

  FIG. 5 shows an example of a semiconductor device using the functional substrate of the present invention. In this semiconductor device, a semiconductor element 120 is disposed on a heat radiating member 110, and the heat radiating member 110 is constituted by the functional substrate 10 described in the above embodiment. That is, the heat radiating member 110 has a functional region 20 including diamond particles 21 as a functional material in a part in the thickness direction from the surface of the substrate 10A in the substrate 10A that is a metal plate such as aluminum (Al). Yes. The functional region 20 is formed by disposing diamond powder on the surface of the substrate 10A and then embedding the diamond powder in a part in the thickness direction from the surface of the substrate 10A by applying a shock wave SW. Thereby, in this semiconductor device, the heat dissipation member 110 has high thermal conductivity, and the heat dissipation efficiency can be improved.

  The semiconductor element 120 is bonded to the heat dissipation member 110 with an adhesive layer (not shown) such as solder interposed therebetween. The type of the semiconductor element 120 is not particularly limited, and examples thereof include a semiconductor light emitting element such as a laser or a light emitting diode, a computer CPU (Central Processing Unit).

  In this semiconductor device, heat generated from the semiconductor element 120 is efficiently dissipated through the functional region 20 including the diamond particles 21 and having high thermal conductivity.

  Thus, in this Embodiment, since the functional board | substrate 10 of this invention was provided as the heat radiating member 110, heat dissipation efficiency can be improved.

  Furthermore, specific examples of the present invention will be described.

Example 1
A functional substrate 10 was fabricated in the same manner as in the above embodiment. First, 0.8 g of artificial synthetic diamond powder having a diameter of 10 μm to 20 μm was prepared as the diamond powder 21A. The SEM (Scanning Electron Micrograph) is shown in FIG.

  Also, two industrial pure aluminum plates (thickness 1.5 mm, JIS A1050-O, (> 99.5 mass% Al)) are prepared as the substrate 10A and the protective material 30, and these are made of 0.1 mm air. The diamond powder 21 </ b> A was placed in opposition with a gap, and the periphery was sealed with a sealing layer 31.

Next, the diamond powder 21 </ b> A sealed between the substrate 10 </ b> A and the protective material 30 and the shock wave generation source 40 were installed in parallel in a water tank 50 filled with water W as the transmission medium M. As the explosive 41 for the shock wave generation source 40, SEP (trade name) manufactured by Asahi Kasei Co., Ltd. (explosion speed: about 7 km / s, density: about 1300 kg / m ³ ) was used. The thickness of the explosive 41 was fixed to 5 mm, and the distance tw between the protective material 30 and the explosive 41 was 40 mm.

  Subsequently, a shock wave SW is generated by detonating the explosive 41, the shock wave SW is applied to the diamond powder 21A, and the diamond powder 21A is embedded in a part in the thickness direction from the surface of the substrate 10A to form the functional region 20. . When the maximum pressure of the shock wave SW was separately evaluated, the value was about 1 GPa by numerical simulation (see Non-Patent Document 1).

  After that, the obtained functional substrate 10 was collected and the cross section was examined. FIG. 7 shows the photograph. Diamond particles 21 were embedded in the substrate 10A. In other words, it was found that the functional region 20 can be formed by embedding the diamond powder 21A from the surface of the substrate 10A into a part in the thickness direction by applying the shock wave SW to the diamond powder 21A.

  The thickness of the functional region 20 was about several hundreds μm, and there were almost no diamond particles 21 penetrating deeper than the depth of 1 mm from the surface. When diamond particles 21 existing between 200 μm and 1 mm in depth are measured by a point calculation method, they are 2 vol% to 4 vol%, and the content of diamond particles 21 in the functional region 20 is from the surface of the substrate 10A toward the thickness direction. Gradually decreased. 30 vol% or more of diamond particles 21 were observed at 200 μm (0.02 mm) from the surface.

  FIG. 8 is an enlarged optical micrograph of the diamond particles 21 at 0.5 mm from the surface of the functional substrate 10. The diameter of the diamond particles 21 was about 10 μm, and the original dimensions were maintained. This suggests that the diamond powder 21A was not fragmented when the diamond powder 21A collided with the substrate 10A at high speed. In addition, as can be seen from FIG. 8, some of the diamond particles 21 have disappeared sharp edges due to rubbing when penetrating the substrate 10A.

  Further, in the cross section of the functional substrate 10, no trace of holes formed by the penetration of the diamond powder 21A was observed. This suggests that the hole was closed after deformation due to the liquid action of the material at a very high strain rate under high pressure. FIG. 9 schematically shows the process of collision and penetration of such diamond powder 21A. The diamond powder 21A accelerated at high speed collides with the substrate 10A made of aluminum (FIG. 9; right) and penetrates the substrate 10A (FIG. 9; center), but the hole 10B has a short period due to fluidization of soft aluminum. (Fig. 9; left). When the weight change of the functional substrate 10 after the collection was measured, it was confirmed that the weight increase was smaller than the weight increase expected from the average volume content of the diamond particles 21. This suggests that part of the fluidized aluminum was scattered outside as droplets 10C like water droplets (FIG. 9; left). The results also suggest a liquid action at very high strain rates. The evaluation or measurement of the speed of the diamond powder 21A is very difficult at present, but considering such a flow, the diamond powder 21A should have been accelerated to several hundred m / s. This is because the explosive pressure welding bonded by such intense flow is achieved at that speed (for example, see Non-Patent Document 2). The same penetration occurred in the protective material 30.

  The obtained functional substrate 10 was placed on a silicon rubber heater as a heat source, thermocouples were attached to the functional region 20, the region not including the diamond particles 21 around the functional region 20, and the heat source side, and the temperature was measured. The result is shown in FIG.

  As can be seen from FIG. 10, the functional region 20 was higher in temperature than the surrounding region. That is, it was found that the thermal conductivity of the functional region 20 can be increased if the functional region 20 formed using the shock wave SW is provided inside the substrate 10A.

(Examples 2-1 to 2-7)
A functional substrate 10 was formed in the same manner as in Example 1 except that tw was changed. At that time, in Example 2-1, tw = 10 mm, in Example 2-2, tw = 15 mm, in Example 2-3, tw = 20 mm, in Example 2-4, tw = 25 mm, and in Example 2-5, tw. = 30 mm, tw = 35 mm in Example 2-6, and tw = 40 mm in Example 2-7. Example 2-7 is the same as Example 1. The obtained functional substrate 10 was collected, and the distribution of the content of diamond particles 21 in the functional region 20 was examined for the substrate of Example 2-3 (tw = 20 mm). FIG. 11 shows the result. As can be seen from FIG. 11, the content of the diamond particles 21 in the functional region 20 gradually decreased from the surface of the substrate 10A in the thickness direction, and the same result as in Example 1 was obtained. Regarding the functional substrates 10 of other Examples 2-1, 2-2, 2-4, and 2-5, when visually confirmed, a slight difference was observed in the distribution of the content of the diamond particles 21 by tw. Except for this, the same results as in Example 2-3 were obtained.

(Example 3-1)
A functional substrate 10 was fabricated in the same manner as in the above embodiment. First, 0.2 g of artificial synthetic diamond powder having a diameter of 10 μm to 20 μm was prepared as the diamond powder 21A. The SEM is shown in FIG.

Further, as the substrate 10A and the protective material 30, two plates made of magnesium-aluminum-zinc alloy AZ31 (Mg-3Al-1Zn) are prepared, and they are arranged opposite to each other with an air gap of 0.5 mm. The diamond powder 21A was disposed on the periphery, and the periphery was sealed with a sealing layer 31. When arranging the diamond powder 21A, the diamond powder 21A mixed with ethanol as a solvent was passed through the substrate 10A, and then the solvent was dried. The area where the diamond powder 21A was disposed was set to 900 mm ^2, and a waterproof tape having a thickness of 0.5 mm was pasted around it to keep the gap between the substrate 10A and the protective material 30 and waterproof.

Next, the diamond powder 21 </ b> A sealed between the substrate 10 </ b> A and the protective material 30 and the shock wave generation source 40 were installed in parallel in a water tank 50 filled with water W as the transmission medium M. As the explosive 41 of the shock wave generation source 40, SEP (trade name) (explosion speed: 7000 km / s, density: about 1310 kg / m ³ ) manufactured by Asahi Kasei Chemicals Corporation was used. The thickness of the explosive 41 was fixed to 5 mm, and the distance tw between the protective material 30 and the explosive 41 was 15 mm. In addition, what enclosed diamond powder 21A between the board | substrate 10A and the protective material 30 was installed on the support body (not shown) which consists of a mild steel plate provided in the bottom of the water tank 50. FIG.

  Subsequently, a shock wave SW is generated by detonating the explosive 41, the shock wave SW is applied to the diamond powder 21A, and the diamond powder 21A is embedded in a part in the thickness direction from the surface of the functional substrate 10, and the functional region 20 is formed. Formed.

(Examples 3-2 to 3-6)
A functional substrate 10 was formed in the same manner as in Example 3-1, except that tw was changed. At that time, tw = 20 mm in Example 3-2, tw = 25 mm in Example 3-3, tw = 30 mm in Example 3-4, tw = 35 mm in Example 3-5, and tw in Example 3-6. = 40 mm.

  When the obtained functional substrate 10 was collected and the formation state of the functional region 20 was examined, the function in which the diamond particles 21 were coated on the surfaces of all the functional substrates 10 of Examples 3-1 to 3-6. Region 20 was formed. FIG. 13 shows a photograph of the functional substrate 10 on which the functional region 20 is formed, FIG. 14 shows a surface SEM photograph, and FIG. 15 shows the analysis result of the surface X-ray diffraction. Moreover, in FIG. 16, the cross-sectional microscope picture of the functional area | region 20 obtained in Example 3-4 is shown.

  As can be seen from FIG. 14, the diamond particles 21 were arranged on the surface of the functional region 20 without any gaps, but the dimensions and shape of the diamond particles 21 are the same as the diamond powder 21A before embedding shown in FIG. The sharp edge of the outline remained. Further, as can be seen from FIG. 15, no peaks other than the alloy of AZ31 and diamond were confirmed from the functional region 20.

  Furthermore, as can be seen from FIG. 16, in the functional region 20 obtained in Example 3-4, the diamond particles 21 are concentrated to a depth of about 50 μm near the surface where the diamond powder 21A starts to be implanted. It was. Regarding other examples, the presence of diamond particles 21 in the vicinity of the surface of AZ31 could be confirmed in the same manner, although there was a difference in depth.

  That is, by applying a shock wave SW to the diamond powder 21A so that the diamond powder 21A is embedded in a part of the thickness direction from the surface of the substrate 10A, the outer dimensions and shape of the diamond powder 21A are maintained. It has been found that the functional region 20 can be formed without changing the properties of the diamond powder 21A and the substrate 10A. In Examples 3-1 to 3-6, tw was set to 40 mm at the maximum, but it is considered that the functional substrate 10 can be formed even if tw = 40 mm is exceeded. In an expectation, about tw = 60 mm is a range in which the functional substrate 10 can be formed.

  About the functional board | substrate 10 obtained in Examples 3-1 to 3-6, the abrasion test of the functional area | region 20 was done, and the weight change before and after an experiment was measured. The conditions for the wear test were a measurement load of 30 g, a measurement speed of 382 rpm, a measurement radius of 2.5 mm, a measurement time of 1000 s, a measurement temperature of room temperature, and a measurement distance of 1 km. The obtained results are shown in Table 1.

  As a comparative example, a plate made of an untreated AZ31 alloy that does not form the functional region 20 was also subjected to a wear experiment under the same conditions as in the above example, and the change in weight before and after the experiment was measured. The results are also shown in Table 1.

  As can be seen from Table 1, the functional substrate 10 of the above example in which the functional region 20 was formed by treating the surface with a diamond particle 21 by shock wave loading has a higher mass than the comparative example in which the functional region 20 is not formed. The amount of reduction was very small and much harder to cut. That is, it was found that the functional substrate 10 in which the functional region 20 is formed by the shock wave SW can significantly improve the wear resistance as compared with the case where the functional region 20 is not formed.

Example 4
A functional substrate 10 was formed in the same manner as in Example 1 except that SiC particles were used instead of diamond particles 21 as the functional material. At that time, 0.1 g of 250 mesh SiC powder was used, and tw = 20 mm. When the obtained functional substrate 10 was collected and the state of the cross section was examined, the same result as in Example 1 was obtained.

  Although the present invention has been described with reference to the embodiments and examples, the present invention is not limited to the above embodiments and examples, and various modifications can be made. For example, although the case where the functional region 20 is formed in a part in the thickness direction from the surface of the substrate 10A has been described, depending on the pressing condition of the diamond powder 21A by the shock wave SW, the functional region 20 is formed in the entire thickness direction from the surface of the substrate 10A. It is also possible to do.

  In the above-described embodiments and examples, the configuration of the functional substrate 10 is specifically described. However, the configuration of the functional substrate 10 is not limited to the above-described embodiments and examples. For example, the functional region 20 is not necessarily formed on only part of the surface of the functional substrate 10 as shown in FIG. 1, and may be formed over the entire surface of the functional substrate 10.

  Furthermore, the material and thickness of each component, or the pressurizing conditions of the diamond powder 21A by the shock wave SW are not limited, and may be other materials and thicknesses, or other pressurizing conditions. In addition, other materials such as copper (Cu), titanium (Ti), or stainless steel can be used as the protective material 30 instead of the aluminum (Al) plate.

It is a perspective view showing the structure of the functional board | substrate which concerns on one embodiment of this invention. It is sectional drawing showing an example of the cross-sectional structure of the functional area | region shown in FIG. It is sectional drawing showing the other example of the cross-section of a functional area. It is a figure for demonstrating the manufacturing method of the functional board | substrate shown in FIG. It is sectional drawing showing an example of the semiconductor device which used the functional board | substrate shown in FIG. 1 as a heat radiating member. 2 is an SEM of powder used in Example 1. 2 is a photograph showing the result of Example 1. FIG. 2 is a photograph showing the result of Example 1. FIG. It is a figure for demonstrating the process of collision and penetration of a diamond powder. FIG. 6 is a diagram illustrating the result of Example 1. It is a figure showing the result of Example 2-3. It is a SEM photograph of the powder used in Examples 3-1 to 3-6. It is a surface photograph of the functional substrate obtained in Examples 3-1 to 3-6. It is a SEM photograph of the surface of the functional region obtained in Examples 3-1 to 3-6. It is a photograph of the X-ray analysis of the surface of the functional region obtained in Examples 3-1 to 3-6. It is a cross-sectional photomicrograph of the functional region obtained in Example 3-4.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Functional substrate, 10A ... Substrate, 10B ... Hole, 10C ... Splash, 20 ... Functional area, 21 ... Diamond particle, 21A ... Diamond powder, 30 ... Protective material, 31 ... Sealing layer, 40 ... Shock wave generation source, DESCRIPTION OF SYMBOLS 41 ... Explosive, 42 ... Electric detonator, 43 ... Support plate, 50 ... Water tank, SW ... Shock wave, W ... Water, 110 ... Radiation member, 120 ... Semiconductor element.

Claims (10)

Placing a functional material powder on the surface of a substrate having a predetermined thickness;
And a step of embedding a functional material in at least part of the thickness direction from the surface of the substrate by applying a shock wave to form a functional region in the substrate. The method for producing a functional substrate according to claim 1, wherein a metal plate is used as the substrate and diamond particles are used as the functional material. The method of manufacturing a functional substrate according to claim 2, wherein the metal plate is made of at least one member selected from the group consisting of aluminum (Al), magnesium (Mg), and zinc (Zn). The method for manufacturing a functional substrate according to any one of claims 1 to 3, wherein a shock wave is applied after the powder on the substrate is covered with a protective material. In the substrate, having a functional region containing a functional material in at least part of the thickness direction from the surface of the substrate,
The functional region is formed by disposing a powder of a functional material on the surface of the substrate and then applying a shock wave to the powder. The functional substrate according to claim 5, wherein the content of the functional material in the functional region is uniform in the thickness direction from the surface of the substrate. The functional substrate according to claim 5, wherein the content of the functional material in the functional region gradually decreases from the surface of the substrate in the thickness direction. The functional substrate according to claim 5, further comprising a functional region made of diamond particles in the metal plate. The functional board according to claim 8, wherein the metal plate is made of at least one member selected from the group consisting of aluminum, magnesium, and zinc. A semiconductor device including a semiconductor element on a heat dissipation member,
The heat dissipating member is a metal plate, the metal plate has a functional region containing diamond particles in at least part of the thickness direction from the surface thereof, and the functional region is arranged with diamond powder on the surface of the metal plate. Then, the semiconductor device is formed by applying a shock wave to the powder.

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