JP2007019113A - Method for manufacturing semiconductor chip and tape - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method suitable for manufacturing a thin semiconductor chip. <P>SOLUTION: The method for manufacturing a thin semiconductor chip includes a preparation step, a division step and a separation step. In the preparation step, a tape 100 is bonded to a thinned substrate 12' on which a semiconductor device 12a is formed. The tape 100 has a first base member 18, a first adhesive layer 17, a second base member 16, and a second adhesive layer 15. In the division step, a groove 19 is formed in the thinned substrate 12', the second layer 15 and the second member 16. Consequently, the thinned substrate 12', the second layer 15 and the second member 16 are divided, respectively, into a plurality of semiconductor chips 12c, a plurality of chip adhesive layers 15a and a plurality of chip base members 16a. In the separation step, the semiconductor chip 12c is separated from the first member 18 by reducing adhesion of the first layer 17. The semiconductor chip 12c is separated from the first base member 18 in a state where the semiconductor chip 12c is supported by the chip base member 16a through the chip adhesive layer 15a. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a semiconductor chip and a tape suitable for the method.

  In recent years, device layer thinning technology is expected in applications to IC cards and the like. As a thinning technique, a technique is known in which an integrated circuit is manufactured on a silicon substrate, and then the silicon substrate is ground and thinned from the back side using a grinder.

  With reference to FIG. 1, the background art regarding the thinning and dicing of the device layer will be described. First, as shown in FIG. 1A, a protective tape 4 is attached to the surface of the wafer 3 on which the semiconductor device 2 is formed, and the back surface of the wafer 3 is polished by the grinder 1 to obtain the structure shown in FIG. As shown, the wafer 3 is thinned.

  Next, as shown in FIG. 1C, the thinned wafer 3 'is transferred onto the dicing tape 5, and the protective tape 4 is peeled off. Next, as shown in FIG. 1D, grooves 6 are formed in the wafer 3 'by a dicer to divide the wafer 3' into a plurality of semiconductor chips 3a.

Next, as shown in FIG. 1E, the dicing tape 5 is stretched by applying a tensile force 7 to widen the interval between the semiconductor chips 3a. In this state, as shown in FIG. 1 (f), the needle 9 is abutted against the back side of the dicing tape 5, and the semiconductor chip 3 a is peeled off from the dicing tape 7 and then picked up by the vacuum chuck 8 or the like.
Electronic Materials January 2005, p. 83, Yasuhiko Oyama, Toshio Gangnam

  In the technique described with reference to FIG. 1, since the tensile stress acts on the thin semiconductor chip 3a when the dicing tape 5 is stretched, the semiconductor chip 3a may be damaged such as cracking or chipping. Further, in this technique, when the semiconductor chip 3a is picked up by pushing up the needle 9, the semiconductor chip 3a may bend and the semiconductor chip 3a may be damaged. Further, in this technique, there is a possibility that the thin and fragile semiconductor chip 3a may be damaged when the semiconductor chip 3a is conveyed by the vacuum chuck 8 or the like. Such a problem becomes more prominent when the thickness of the semiconductor device layer is 50 microns or less.

  The present invention has been made on the basis of recognition of the above problems, and an object thereof is to provide a manufacturing method and a tape suitable for manufacturing a thin semiconductor chip, for example.

  The tape according to the first aspect of the present invention includes a first base member, a first adhesive layer disposed on the first base member, a second base member disposed on the first adhesive layer, And a second adhesive layer disposed on the second base member. Here, the plasticity of the first base member is greater than the plasticity of the second base member.

  According to a preferred embodiment of the present invention, for example, the tape is preferably configured so that the adhesive force of the first adhesive layer and the adhesive force of the second adhesive layer can be independently controlled.

  According to a preferred embodiment of the present invention, it is preferable that the second base member and the second adhesive layer are divided into a plurality of regions by grooves.

  The semiconductor chip manufacturing method according to the second aspect of the present invention includes a preparation process, a dividing process, and a separating process. In the preparation step, a tape is bonded to the thinned substrate on which the semiconductor device is formed. Here, the tape includes a first base member, a first adhesive layer disposed on the first base member, a second base member disposed on the first adhesive layer, and the second base member. And a second adhesive layer disposed thereon. Further, the second adhesive layer of the tape is bonded to the thinned substrate. In the dividing step, grooves are formed in the thinned substrate, the second adhesive layer, and the second base member. Accordingly, the thinned substrate, the second adhesive layer, and the second base member are each divided into a plurality of semiconductor chips, a plurality of chip adhesive layers, and a plurality of chip base members. In the separation step, the semiconductor chip is separated from the first base member by reducing an adhesive force of the first adhesive layer of the first adhesive layer and the second adhesive layer. At this time, the semiconductor chip is separated from the first base member in a state where the semiconductor chip is supported by the chip base member via the chip adhesive layer.

  The semiconductor chip manufacturing method according to the third aspect of the present invention includes a preparation process, a dividing process, and a separating process. Here, in the preparation step, a tape is bonded to the thinned substrate on which the semiconductor device is formed. The tape is disposed on the first base member, the first adhesive layer disposed on the first base member, the second base member disposed on the first adhesive layer, and the second base member. A second adhesive layer. In the tape, the second base member is divided into a plurality of chip base members, and the second adhesive layer is divided into a plurality of chip adhesive layers. The tape is bonded to the thinned substrate so that the second adhesive layer is bonded to the semiconductor device. In the dividing step, a groove is formed in the thinned substrate, and the thinned substrate is divided into a plurality of semiconductor chips each supported by the chip base member via the chip adhesive layer. In the separation step, the semiconductor chip is separated from the first base member by reducing an adhesive force of the first adhesive layer of the first adhesive layer and the second adhesive layer. At this time, the semiconductor chip is separated from the second base member in a state where the semiconductor chip is supported by the chip base member via the chip adhesive layer.

  In the second and third aspects, according to a preferred embodiment of the present invention, the manufacturing method reduces the adhesive force of the chip adhesive layer and separates the chip base member from the semiconductor chip. It is preferable to further include a separation step.

  According to a preferred embodiment of the present invention, in the preparation step, the first surface of the substrate on which the semiconductor device is formed on the first surface is supported by a support, and the substrate is supported from the second surface side of the substrate. It is preferable to include a step of making the thinned substrate by thinning and a step of bonding the tape to the thinned substrate.

  Alternatively, the preparation step includes a step of manufacturing a substrate having a device layer on which a semiconductor device is formed and a separation layer disposed under the device layer, and the second adhesive layer of the tape is formed on the device layer. It is preferable to include a step of bonding and a step of separating the device layer from the substrate as the thinned substrate using the separation layer.

  According to the present invention, for example, a manufacturing method and a tape suitable for manufacturing a thin semiconductor chip are provided.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

[First Embodiment]
This embodiment relates to a tape suitable for dicing a thinned substrate on which a semiconductor device is formed.

  FIG. 2 is a cross-sectional view schematically showing the tape according to the first embodiment of the present invention. A tape 100 shown in FIG. 2 is suitable for dicing a thinned substrate on which a semiconductor device is formed, and can also be called a dicing tape. The tape 100 includes a first base member 18, a first adhesive layer 17 disposed on the first base member 18, a second base member 16 disposed on the first adhesive layer 17, and a second base member 16. And a second adhesive layer 15 disposed thereon. The tape 100 can further include a laminated structure including a base member and an adhesive layer. The plasticity of the first base member 18 is greater than the plasticity of the second base member 16 and is more flexible than the second base member 16.

  The tape 100 can be configured such that the adhesive force of the first adhesive layer 17 and the adhesive force of the second adhesive layer 15 can be independently controlled. The adhesive force can be controlled by, for example, irradiating the adhesive layer with ultraviolet light or applying heat. As an adhesive whose adhesive strength decreases when it receives ultraviolet light, for example, an ultraviolet light peeling adhesive containing an ultraviolet light cross-linking acrylic polymer and an ultraviolet light sensitive gas generating material is known (Japanese Patent Laid-Open No. 2005-2005). No. 123403). As an adhesive whose adhesive strength is reduced when heat is applied, for example, a heat-peeling adhesive in which a foaming agent is blended in a polymer is known (Japanese Patent Laid-Open No. 08-001859).

  For example, the first adhesive layer 17 is made of a material whose adhesive strength is reduced to a predetermined level or less when irradiated with ultraviolet light, and the second adhesive layer 15 has an adhesive strength when heated. It can be composed of a material that falls below a predetermined level. In this case, the adhesive force of the first adhesive layer 17 out of the first adhesive layer 17 and the second adhesive layer 15 can be selectively reduced by irradiating the tape 100 with ultraviolet light. Further, by applying heat to the tape 100, the adhesive force of the second adhesive layer 15 among the first adhesive layer 17 and the second adhesive layer 15 can be selectively reduced. Typically, first, the adhesive force of the first adhesive layer 17 is reduced by irradiating the tape 100 with ultraviolet light to separate the second base member 16 from the first base member 18. Next, by applying heat to the second adhesive layer 15, the adhesive force of the second adhesive layer 15 is reduced, and the second base member 16 and the member bonded to the second adhesive layer 15 via the second adhesive layer 15 are separated. To do.

  Alternatively, the first adhesive layer 17 is made of a material whose adhesive force decreases to a predetermined level or less at the first temperature (T1), and the second adhesive layer 15 is a second temperature (T2) higher than the second temperature. ) Can be made of a material whose adhesive strength is reduced to a predetermined level or less. In this case, first, the adhesive force of the first adhesive layer 17 is reduced by heating the tape 100 to a temperature not lower than the first temperature (T 1) and lower than the second temperature (T 2). The base member 16 is separated. Next, the adhesive force of the second adhesive layer 15 is reduced by heating the second adhesive layer 15 to a temperature equal to or higher than the second temperature (T2), and the second adhesive layer 15 is interposed between the second base member 16 and the second adhesive layer 15. Separate the bonded members.

Alternatively, the second base member 16 is configured as a member having a low ultraviolet light transmittance, and both the first adhesive layer 17 and the second adhesive layer 15 are irradiated with ultraviolet light, so that the adhesive force is reduced to a predetermined level or less. It can be composed of a material that degrades. In this case, the adhesive force of the first adhesive layer 17 out of the first adhesive layer 17 and the second adhesive layer 15 is selectively reduced by irradiating the first adhesive layer 17 with ultraviolet light through the first base member 18. Can do. Further, by irradiating the second adhesive layer 15 with ultraviolet light from the opposite side of the second base member 16, the adhesive force of the second adhesive layer 15 is selectively selected from the first adhesive layer 17 and the second adhesive layer 15. Can be lowered. Typically, first, the adhesive force of the first adhesive layer 17 is reduced by irradiating the first adhesive layer 17 with ultraviolet light through the first base member 18, and the first base member 18 to the second base member 16. Isolate. Next, the adhesive force of the second adhesive layer 15 is reduced by irradiating the second adhesive layer 15 with ultraviolet light, and the second base member 16 and the member bonded to the second adhesive layer 15 via the second adhesive layer 15 are bonded. To separate. As the second base member 16, for example, a member obtained by applying fine particles of TiO ₂ or ZnO to a resin such as polyester is suitable.

  Alternatively, the first adhesive layer 17 is made of a material whose adhesive strength decreases to a predetermined level or less when heat is applied, and the second adhesive layer 15 has a predetermined adhesive strength when irradiated with ultraviolet light. It can be composed of a material that falls below a level. In this case, the adhesive force of the first adhesive layer 17 out of the first adhesive layer 17 and the second adhesive layer 15 can be selectively reduced by applying heat to the tape 100. In addition, the adhesive force of the second adhesive layer 15 among the first adhesive layer 17 and the second adhesive layer 15 can be selectively reduced by irradiating the tape 100 with ultraviolet light. Typically, first, the adhesive force of the first adhesive layer 17 is reduced by applying heat to the tape 100 to separate the second base member 16 from the first base member 18. Next, the adhesive force of the second adhesive layer 15 is reduced by irradiating the second adhesive layer 15 with ultraviolet light, and the second base member 16 and the member bonded to the second adhesive layer 15 via the second adhesive layer 15 are bonded. To separate.

[Second Embodiment]
This embodiment relates to an improved example of the first embodiment. Here, matters that are not particularly mentioned can follow the first embodiment.

  FIG. 3 is a cross-sectional view schematically showing a tape according to a second embodiment of the present invention. A tape 100 'shown in FIG. 3 is suitable for dicing a thinned substrate on which a semiconductor device is formed, and can also be called a dicing tape. The tape 100 'includes a first base member 18, a first adhesive layer 17 disposed on the first base member 18, a second base member 16 disposed on the first adhesive layer 17, and a second base member. 16 and a second adhesive layer 15 disposed on the upper surface. The tape 100 can further include a laminated structure including a base member and an adhesive layer. The plasticity of the first base member 18 is greater than the plasticity of the second base member 16 and is more flexible than the second base member 16.

  In the tape 100 ′ of this embodiment, the second base member 16 and the second adhesive layer 15 are divided into a plurality of regions by precut grooves 39. The second base member 16 is divided into a plurality of chip base members 16 a by grooves 39. The second adhesive layer 15 is divided into a plurality of chip adhesive layers 15 a by grooves 39. The chip base member 16a and the chip adhesive layer 15a overlapping the chip base member 16a have substantially the same shape. Further, the chip base member 16a and the chip adhesive layer 15a overlapping with the chip base member 16a have substantially the same shape as the semiconductor chip bonded to the chip base member 16a via the chip adhesive layer 15a.

[Third embodiment]
This embodiment relates to a method for manufacturing a semiconductor chip using the tape of the first embodiment. In the following, although not particularly mentioned, the tape 100 is configured so that the adhesive force of the first adhesive layer 17 and the adhesive force of the second adhesive layer 15 can be independently controlled.

  FIG. 4 is a diagram schematically showing a semiconductor chip manufacturing method according to the third embodiment of the present invention. First, as shown in FIG. 4A, the semiconductor device 12 a supports the first surface 12-1 of the substrate 12 formed on the first surface 12-1 by the stage (support) 14 through the protective layer 13. To do. In this state, the second surface 12-2 of the substrate 12 is polished and thinned by the grinder 11 to obtain a thinned substrate (thinned substrate) 12 'as shown in FIG. 4B.

  Next, as shown in FIG. 4C, the second adhesive layer 15 of the tape 100 is adhered to the polished surface (second surface) of the thinned substrate 12 '.

  Next, the protective film 13 is peeled off from the thinned substrate 12 ′ as necessary, and the thinned substrate 12 ′, the second adhesive layer 15, and the second base member 16 are formed by a dicer as shown in FIG. A dicing groove 19 is formed. Accordingly, the thinned substrate 12 ', the second adhesive layer 15, and the second base member 16 are divided into a plurality of semiconductor chips 12c, a plurality of chip adhesive layers 15a, and a plurality of chip base members 16a, respectively.

  Next, as shown in FIG. 4D, the first base member 18 is stretched by applying a tensile force 20 to the first base member 18 to widen the interval between the semiconductor chips 12c. In this state, as shown in FIG. 4E, the first adhesive layer 17 is irradiated with ultraviolet light 21 through the first base member 18, or heat 21 is applied to the first adhesive layer 17. Thereby, the adhesive force between the first base member 18 and the second base member 16 (chip base member 16a) by the first adhesive layer 17 is reduced, and the chip base member 16a can be easily peeled from the first adhesive layer 17. become.

  Next, as shown in FIG. 4E, the needle 22 is abutted against the back side of the first base member 18, and the semiconductor chip 12c is picked up by an operation mechanism (not shown). At this time, the semiconductor chip 12c is picked up (ie, separated from the first adhesive layer 17) while being supported by the chip base member 16a via the chip adhesive layer 15a.

  Next, as shown in FIG. 4 (f), the picked-up semiconductor chip 12 c is placed on the support substrate 24 so that the formation surface of the semiconductor device 12 a faces down by an operation mechanism such as a vacuum chuck 23.

  Next, the chip adhesive layer 15a (second adhesive layer 15) is irradiated with ultraviolet light or applied with heat to reduce the adhesive force, and the chip base member 16a is separated from the semiconductor chip 12c.

  According to this embodiment, since the semiconductor chip 12c is supported by the chip base member 16a and separated from the first base member 18 and operated, the semiconductor chip 12c is prevented from being damaged.

  Hereinafter, examples that further embody the third embodiment of the present invention will be described.

[First embodiment]
In the first embodiment, the first adhesive layer 17 is made of a material whose adhesive force is lowered to a predetermined level or less by ultraviolet light, and the second adhesive layer 15 is a material whose adhesive force is lowered to a predetermined level or less by heat. Composed.

  Hereinafter, the semiconductor chip manufacturing method of the first embodiment will be described with reference to FIG. First, as shown in FIG. 4A, the semiconductor device 12 a supports the first surface 12-1 of the substrate 12 formed on the first surface 12-1 by the stage (support) 14 through the protective layer 13. To do. In this state, the second surface 12-2 of the substrate 12 is polished and thinned by the grinder 11 to obtain a thinned substrate (thinned substrate) 12 'as shown in FIG. 4B.

  Here, the semiconductor device 12a may include, for example, a CMOS, a bipolar transistor, a diode, a capacitor, a semiconductor integrated circuit such as a DRAM, a microprocessor, and / or a logic IC. However, there is no restriction on the type of the semiconductor device 12a.

  The protective layer 13 protects the semiconductor device 12a or the surface on which it is formed. The protective layer 13 is preferably easily peelable from the substrate 12 ′ after being thinned. For example, the protective layer 13 is preferably composed of an adhesive that reduces the adhesive strength by receiving ultraviolet light.

  Next, as shown in FIG. 4C, the second adhesive layer 15 of the tape 100 is adhered to the polished surface (second surface) of the thinned substrate 12 '. The tape 100 has a laminated structure including the first base member 18, the first adhesive layer 17, the second base member 16, and the second adhesive layer 15. Here, in the first embodiment, the first base member 18 is formed of a flexible material that transmits ultraviolet light, such as a PVC film. The first adhesive layer 17 is formed of a material whose adhesive strength is reduced by receiving ultraviolet light. The second base member 16 is made of, for example, polyester. The second base member 16 preferably has high rigidity in order to prevent damage to the semiconductor chip 12c during the operation of the semiconductor chip 12c. For example, the second base member 16 preferably has a thickness of 50 μm or more. The second adhesive layer 15 is formed of a material whose adhesive force is reduced by heat.

  Next, as shown in FIG. 4D, the protective film 13 is peeled from the thinned substrate 12 '. Thereafter, as shown in FIG. 4D, a groove 19 having a depth of about 3 to 5 μm and a width of about 100 μm is formed by a dicer. Accordingly, the thinned substrate 12 ', the second adhesive layer 15, and the second base member 16 are divided into a plurality of semiconductor chips 12c, a plurality of chip adhesive layers 15a, and a plurality of chip base members 16a, respectively.

The groove 19 can be formed according to a normal dicing method, and is performed by, for example, a blade, chemical etching, a YAG laser, a CO ₂ laser, an excimer laser, or the like.

  Next, as shown in FIG. 4D, the first base member 18 is stretched by applying a tensile force 20 to the first base member 18 to widen the interval between the semiconductor chips 12c. Thereby, at the time of abutment with the needle 22 in a later step, damage (for example, cracks, chipping) of the semiconductor chip 12c due to contact between adjacent semiconductor chips 13c can be prevented.

  Next, as shown in FIG. 4E, the first adhesive layer 17 is irradiated with ultraviolet light 21 through the first base member 18. Thereby, the adhesive force between the first base member 18 and the second base member 16 (chip base member 16a) by the first adhesive layer 17 is reduced, and the chip base member 16a can be easily peeled from the first adhesive layer 17. become. Here, for example, by locally irradiating the first adhesive layer 17 with ultraviolet light using a spot UV device or the like, the adhesive force of the first adhesive layer 17 is applied only to the portion of the semiconductor chip 12c to be picked up. Can weaken.

  Next, as shown in FIG. 4E, the needle 22 is abutted against the back side of the first base member 18, and the semiconductor chip 12c is picked up by an operation mechanism (not shown). At this time, the semiconductor chip 12c is picked up (ie, separated from the first adhesive layer 17) while being supported by the chip base member 16a via the chip adhesive layer 15a.

  Next, as shown in FIG. 4 (f), the picked-up semiconductor chip 12 c is placed on the support substrate 24 so that the formation surface of the semiconductor device 12 a faces down by an operation mechanism such as a vacuum chuck 23. Next, by applying heat to the chip adhesive layer 15a (second adhesive layer 15), the adhesive force is reduced, and the chip base member 16a is separated from the semiconductor chip 12c as shown in FIG. . Here, for example, a heater is provided in the vacuum chuck 23, and heat can be applied to the chip adhesive layer 15a by the heater.

[Second Embodiment]
In the second embodiment, the first adhesive layer 17 is made of a material whose adhesive strength decreases below a predetermined level at the first temperature, and the second adhesive layer 15 has an adhesive strength at a second temperature higher than the second temperature. Can be made of a material that decreases below a predetermined level.

  The steps up to the thinning of the substrate 12 (FIGS. 4A and 4B) are the same as in the first embodiment.

  After the substrate is thinned, as shown in FIG. 4C, the second adhesive layer 15 of the tape 100 is bonded to the polished surface (second surface) of the thinned substrate 12 '. The tape 100 has a laminated structure including the first base member 18, the first adhesive layer 17, the second base member 16, and the second adhesive layer 15. Here, in the second embodiment, the first base member 18 is formed of a flexible member that transmits ultraviolet light, such as a PVC film. The first adhesive layer 17 is formed of a material whose adhesive force is reduced by heat at a temperature (T1). The second base member 16 is made of polyester or the like. The second base member 16 preferably has high rigidity in order to prevent damage to the semiconductor chip 12c during the operation of the semiconductor chip 12c. For example, the second base member 16 preferably has a thickness of 50 μm or more. The second adhesive layer 15 is formed of a material whose adhesive force is reduced by heat at temperature (T2). Here, T1 <T2.

  Next, as shown in FIG. 4D, the protective film 13 is peeled from the thinned substrate 12 '. Thereafter, as shown in FIG. 4D, a groove 19 having a depth of about 3 to 5 μm and a width of about 100 μm is formed by a dicer. Accordingly, the thinned substrate 12 ', the second adhesive layer 15, and the second base member 16 are divided into a plurality of semiconductor chips 12c, a plurality of chip adhesive layers 15a, and a plurality of chip base members 16a, respectively.

The groove 19 can be formed according to a normal dicing method, and is performed by, for example, a blade, chemical etching, a YAG laser, a CO ₂ laser, an excimer laser, or the like.

  Next, as shown in FIG. 4D, the first base member 18 is stretched by applying a tensile force 20 to the first base member 18 to widen the interval between the semiconductor chips 12c. Thereby, at the time of abutment with the needle 22 in a later step, damage (for example, cracks, chipping) of the semiconductor chip 12c due to contact between adjacent semiconductor chips 13c can be prevented.

  Next, as shown in FIG. 4E, heat at a temperature (T1) is applied to the tape 100. Thereby, the adhesive force between the first base member 18 and the second base member 16 (chip base member 16a) by the first adhesive layer 17 is reduced, and the chip base member 16a can be easily peeled from the first adhesive layer 17. become. Here, the application of heat to the tape 100 can be performed by, for example, mounting a heater on an operation mechanism for picking up the semiconductor chip 12c and using the heater. By using such a heater, the adhesive force of the first adhesive layer 17 can be weakened only for the portion of the semiconductor chip 12c to be picked up.

  Next, as shown in FIG. 4E, the needle 22 is abutted against the back side of the first base member 18, and the semiconductor chip 12c is picked up by an operation mechanism (not shown). At this time, the semiconductor chip 12c is picked up (ie, separated from the first adhesive layer 17) while being supported by the chip base member 16a via the chip adhesive layer 15a.

  Next, as shown in FIG. 4F, the picked-up semiconductor chip 12c is placed on the support substrate 24 by the operation mechanism such as the vacuum chuck 23 so that the formation surface of the semiconductor device 12a faces down. Next, by applying heat at a temperature (T2) to the chip adhesive layer 15a (second adhesive layer 15), the adhesive force is reduced, and as shown in FIG. The member 16a is separated. Here, for example, a heater is provided in the vacuum chuck 23, and heat can be applied to the chip adhesive layer 15a by the heater.

  By setting T1 <T2, it is possible to prevent the second base member 16 from being peeled off from the semiconductor chip 12c and to selectively peel off only the first base member 18 when the heat of temperature (T1) is applied. it can.

[Third embodiment]
In the third embodiment, the second base member 16 is configured as a member having a low ultraviolet light transmittance, and both the first adhesive layer 17 and the second adhesive layer 15 are lowered in adhesive strength to a predetermined level or less by the ultraviolet light. Consists of materials that

  The steps up to the thinning of the substrate 12 (FIGS. 4A and 4B) are the same as in the first embodiment.

After the substrate is thinned, as shown in FIG. 4C, the second adhesive layer 15 of the tape 100 is bonded to the surface to be polished (second surface) of the thinned substrate 12 ′. The tape 100 has a laminated structure including the first base member 18, the first adhesive layer 17, the second base member 16, and the second adhesive layer 15. Here, in the third embodiment, the first base member 18 layer is formed of a flexible material that transmits ultraviolet light, such as a PVC film. The first base member 18 is formed of a flexible material that transmits ultraviolet light, such as a PVC film. The first adhesive layer 17 and the second adhesive layer 15 are formed of a material whose adhesive strength is reduced by receiving ultraviolet light. The second base member 16 is made of, for example, polyester. The second base member 16 preferably has high rigidity in order to prevent damage to the semiconductor chip 12c during the operation of the semiconductor chip 12c. For example, the second base member 16 preferably has a thickness of 50 μm or more. The second base member 16 has a sufficiently low ultraviolet light transmittance by applying fine particles of TiO ₂ or ZnO to a resin such as polyester.

  Next, as shown in FIG. 4D, the protective film 13 is peeled from the thinned substrate 12 '. Thereafter, as shown in FIG. 4D, a groove 19 having a depth of about 3 to 5 μm and a width of about 100 μm is formed by a dicer. Accordingly, the thinned substrate 12 ', the second adhesive layer 15, and the second base member 16 are divided into a plurality of semiconductor chips 12c, a plurality of chip adhesive layers 15a, and a plurality of chip base members 16a, respectively.

The groove 19 can be formed according to a normal dicing method, and is performed by, for example, a blade, chemical etching, a YAG laser, a CO ₂ laser, an excimer laser, or the like.

  Next, as shown in FIG. 4D, the first base member 18 is stretched by applying a tensile force 20 to the first base member 18 to widen the interval between the semiconductor chips 12c. Thereby, at the time of abutment with the needle 22 in a later step, damage (for example, cracks, chipping) of the semiconductor chip 12c due to contact between adjacent semiconductor chips 13c can be prevented.

  Next, as shown in FIG. 4E, the first adhesive layer 17 is irradiated with ultraviolet light 21 through the first base member 18. Thereby, the adhesive force between the first base member 18 and the second base member 16 (chip base member 16a) by the first adhesive layer 17 is reduced, and the chip base member 16a can be easily peeled from the first adhesive layer 17. become. Here, for example, by locally irradiating the first adhesive layer 17 with ultraviolet light using a spot UV device or the like, the adhesive force of the first adhesive layer 17 is applied only to the portion of the semiconductor chip 12c to be picked up. Can weaken.

  Next, as shown in FIG. 4E, the needle 22 is abutted against the back side of the first base member 18, and the semiconductor chip 12c is picked up by an operation mechanism (not shown). At this time, the semiconductor chip 12c is picked up (ie, separated from the first adhesive layer 17) while being supported by the chip base member 16a via the chip adhesive layer 15a.

  Next, as shown in FIG. 4F, the picked-up semiconductor chip 12c is placed on the support substrate 24 by the operation mechanism such as the vacuum chuck 23 so that the formation surface of the semiconductor device 12a faces down. Next, the adhesive force of the chip adhesive layer 15a is reduced by irradiating the chip adhesive layer 15a (second adhesive layer 15) with ultraviolet light, and as shown in FIG. 4G, the semiconductor chip 12c to the chip base member 16a. Isolate.

[Fourth embodiment]
In the fourth embodiment, the first adhesive layer 17 is made of a material whose adhesive force is lowered to a predetermined level or less by heat, and the second adhesive layer 15 is a material whose adhesive force is lowered to a predetermined level or less by ultraviolet light. Composed.

  The steps up to the thinning of the substrate 12 (FIGS. 4A and 4B) are the same as in the first embodiment.

  After the substrate is thinned, as shown in FIG. 4C, the second adhesive layer 15 of the tape 100 is bonded to the polished surface (second surface) of the thinned substrate 12 '. The tape 100 has a laminated structure including the first base member 18, the first adhesive layer 17, the second base member 16, and the second adhesive layer 15. Here, in the fourth embodiment, the first base member 18 is formed of a flexible material that transmits ultraviolet light, such as a PVC film. The first base member 18 is formed of a flexible material that transmits ultraviolet light, such as a PVC film. The first adhesive layer 17 is formed of a material whose adhesive force is reduced by heat. The second base member 16 is made of polyester or the like. The second base member 16 preferably has high rigidity in order to prevent damage to the semiconductor chip 12c during the operation of the semiconductor chip 12c. For example, the second base member 16 preferably has a thickness of 50 μm or more. It is formed of a material whose adhesive strength is reduced by receiving ultraviolet light.

  Next, as shown in FIG. 4D, the protective film 13 is peeled from the thinned substrate 12 '. Thereafter, as shown in FIG. 4D, a groove 19 having a depth of about 3 to 5 μm and a width of about 100 μm is formed by a dicer. Accordingly, the thinned substrate 12 ', the second adhesive layer 15, and the second base member 16 are divided into a plurality of semiconductor chips 12c, a plurality of chip adhesive layers 15a, and a plurality of chip base members 16a, respectively.

The groove 19 can be formed according to a normal dicing method, and is performed by, for example, a blade, chemical etching, a YAG laser, a CO ₂ laser, an excimer laser, or the like.

  Next, as shown in FIG. 4D, the first base member 18 is stretched by applying a tensile force 20 to the first base member 18 to widen the interval between the semiconductor chips 12c. Thereby, at the time of abutment with the needle 22 in a later step, damage (for example, cracks, chipping) of the semiconductor chip 12c due to contact between adjacent semiconductor chips 13c can be prevented.

  Next, heat is applied to the tape 100 as shown in FIG. Thereby, the adhesive force between the first base member 18 and the second base member 16 (chip base member 16a) by the first adhesive layer 17 is reduced, and the chip base member 16a can be easily peeled from the first adhesive layer 17. become. Here, the application of heat to the tape 100 can be performed by, for example, mounting a heater on an operation mechanism for picking up the semiconductor chip 12c and using the heater. By using such a heater, the adhesive force of the first adhesive layer 17 can be weakened only for the portion of the semiconductor chip 12c to be picked up.

  Next, as shown in FIG. 4E, the needle 22 is abutted against the back side of the first base member 18, and the semiconductor chip 12c is picked up by an operation mechanism (not shown). At this time, the semiconductor chip 12c is picked up (ie, separated from the first adhesive layer 17) while being supported by the chip base member 16a via the chip adhesive layer 15a.

  Next, as shown in FIG. 4F, the picked-up semiconductor chip 12c is placed on the support substrate 24 by the operation mechanism such as the vacuum chuck 23 so that the formation surface of the semiconductor device 12a faces down. Next, the adhesive force of the chip adhesive layer 15a is reduced by irradiating the chip adhesive layer 15a (second adhesive layer 15) with ultraviolet light, and as shown in FIG. 4G, the semiconductor chip 12c to the chip base member 16a. Isolate.

[Fourth Embodiment]
This embodiment relates to a method of manufacturing a semiconductor chip using the tape of the second embodiment. Hereinafter, although not particularly mentioned, the tape 100 ′ is configured to be capable of independently controlling the adhesive force of the first adhesive layer 17 and the adhesive force of the second adhesive layer 15.

  FIG. 5 is a diagram schematically showing a semiconductor chip manufacturing method according to the fourth embodiment of the present invention. The fourth embodiment differs from the third embodiment in that a tape 100 ′ in which the second base member 16 and the second adhesive layer 15 are divided into a plurality of regions by grooves 39 is used. In the fourth embodiment, it is not necessary to dice the second base member 16 and the second adhesive layer 15 in addition to the substrate 12 'when dicing the thinned substrate 12'.

  The dicing of the thinned substrate 12 'may be performed before the tape 100' is bonded to the thinned substrate 12 'as shown in FIG.

  Hereinafter, a semiconductor chip manufacturing method according to a third embodiment of the present invention will be described with reference to FIG. First, as shown in FIG. 5A, the semiconductor device 12 a supports the first surface 12-1 of the substrate 12 formed on the first surface 12-1 by the stage (support) 14 through the protective layer 13. To do. In this state, the second surface 12-2 of the substrate 12 is polished and thinned by the grinder 11 to obtain a thinned substrate (thinned substrate) 12 'as shown in FIG. Further, as shown in FIG. 5B, dicing grooves 40 are formed in the thinned substrate 12 'by a dicer. Thus, the thinned substrate 12 'is divided into a plurality of semiconductor chips 12c.

  Next, as shown in FIG. 5C, the second adhesive layer 15 of the tape 100 is bonded to the polished surface (second surface) of the thinned substrate 12 '. Here, the second adhesive layer 15 and the second base member 16 of the tape 100 ′ are divided into a plurality of chip adhesive layers 15 a and a plurality of chip base members 16 a by grooves 39 in advance. The groove 39 is formed so as to overlap the dicing groove 40 formed in the thinned substrate 12 ′.

  Next, as shown in FIG. 5D, the protective film 13 is peeled off from the thinned substrate 12 'as necessary. It can be seen that the structure shown in FIG. 5D is the same as the structure shown in FIG.

  The following steps shown in FIGS. 5E to 5G are the same as the steps shown in FIGS. 4E to 4G.

[Fifth Embodiment]
This embodiment relates to a method of manufacturing a semiconductor chip using the tape of the first or second embodiment. In this embodiment, the thinning process (FIGS. 4A and 5A) in the third or fourth embodiment is simplified by applying a substrate dividing method using a separation layer. It is.

  In the following, although not particularly mentioned, the tape 100 or 100 ′ is configured so that the adhesive force of the first adhesive layer 17 and the adhesive force of the second adhesive layer 15 can be independently controlled.

  FIG. 6 is a diagram schematically showing a semiconductor chip manufacturing method according to the fifth embodiment of the present invention. First, as shown in FIG. 6A, a separation layer (for example, a porous layer or an ion implantation layer) 2 is provided on a seed substrate 33, and a device layer (a layer to be a thinned substrate later) 12 is provided thereon. A substrate 10 having 'is prepared. Next, as shown in FIG. 6B, the semiconductor device 12 a is formed on the device layer 1.

  Next, as shown in FIG. 6C, the second adhesive layer 15 of the tape 100 is adhered to the device layer 12 ′ of the substrate 10. Next, as shown in FIG. 6D, the substrate 10 is divided using the separation layer 32. In this division, a portion 2 ′ of the separation layer 32 remains on the device layer 12 ′ and another portion 2 ″ of the separation layer 32 remains on the seed substrate 33. By this division, it is supported by the tape 100. In this division, for example, a mechanical force such as tension or shear is applied to the separation layer 32, or a fluid is driven into the side surface of the separation layer 32 or the vicinity thereof. Can be done.

  Next, as shown in FIG. 6E, dicing grooves 19 are formed in the separation layer 32 ′, the thinned substrate 12 ′, the second adhesive layer 15, and the second base member 16 by a dicer. As a result, the separation layer 32 ′, the thinned substrate 12 ′, the second adhesive layer 15 and the second base member 16 are divided into a plurality of separation layers 32′a, a plurality of semiconductor chips 12c, a plurality of chip adhesion layers 15a, and a plurality, respectively. The chip base member 16a is divided. Here, when the tape 100 ′ of the second embodiment is applied, a groove may be formed only in the thinned substrate 12 ′ and divided into a plurality of semiconductor chips 12 c. The thinned substrate 12 ′ may be divided before or after the tape 100 ′ is adhered to the thinned substrate 12 ′ or the substrate 10.

  Next, as shown in FIG. 6F, the first base member 18 is stretched by applying a tensile force 20 to the first base member 18 to widen the interval between the semiconductor chips 12c. In this state, as shown in FIG. 6G, the first adhesive layer 17 is irradiated with ultraviolet light 21 through the first base member 18, or heat 21 is applied to the first adhesive layer 17. Thereby, the adhesive force between the first base member 18 and the second base member 16 (chip base member 16a) by the first adhesive layer 17 is reduced, and the chip base member 16a can be easily peeled from the first adhesive layer 17. become.

  Next, as shown in FIG. 6G, the needle 22 is abutted against the back side of the first base member 18, and the semiconductor chip 12c is picked up by an operation mechanism (not shown). At this time, the semiconductor chip 12c is picked up (ie, separated from the first adhesive layer 17) while being supported by the chip base member 16a via the chip adhesive layer 15a.

  Next, as shown in FIG. 6H, the picked-up semiconductor chip 12c is placed on the support substrate 24 so that the separation layer 32'a is on the lower side by an operation mechanism such as a vacuum chuck 23.

  Next, the chip adhesive layer 15a (second adhesive layer 15) is irradiated with ultraviolet light or applied with heat to reduce the adhesive force, and the chip base member 16a is separated from the semiconductor chip 12c.

  Next, as shown in FIG. 6J, a wire 25 for connecting the electrode of the support substrate 24 and the electrode of the semiconductor chip 12c is formed by wire bonding.

  According to this embodiment, the seed substrate 33 is separated using the separation layer with the dicing tape 100 or 100 ′ adhered to the substrate 10, and the thinned substrate 12 ′ is diced in this state to tape 100. Or it can be separated from 100 '. Therefore, it is not necessary to use a protective tape other than the dicing tape for thinning.

  Examples that further embody the fifth embodiment of the present invention will be described below.

[First embodiment]
In the first embodiment, the first adhesive layer 17 is made of a material whose adhesive force is lowered to a predetermined level or less by ultraviolet light, and the second adhesive layer 15 is a material whose adhesive force is lowered to a predetermined level or less by heat. Composed.

  Hereinafter, the semiconductor chip manufacturing method of the first embodiment will be described with reference to FIG. First, as shown in FIG. 6A, porous silicon is formed as a separation layer 32 on a silicon substrate as a seed substrate 33. The porous silicon layer is obtained by anodizing a silicon substrate.

  In order to improve the separability, a porous layer having a high porosity is required, and in order to improve the quality of the transfer device layer 12 ′ formed by epitaxial growth, a porous layer having a low porosity is required as much as possible. It is. In order to satisfy these conflicting requirements, a two-layer porous structure with different porosity is suitable. The anodizing conditions at this time are as follows.

<First porous layer (low-porosity layer: surface side)>
HF concentration: 20%
IPA concentration: 9%
2. Current density: mA / cm ²
Time: 185 seconds <Second porous layer (high porosity layer: depth direction side)>
HF concentration: 20%
IPA concentration: 9%
Current density: 96. mA / cm ²
Time: Anodization was carried out under the conditions of 5 seconds or more. As a result, a porous layer having a porosity of about 25% and a thickness of 1.2 μm was formed on the surface side, and a porosity of about 50% and a thickness was formed thereunder S: A porous layer of 0.3 μm was formed.

  Next, a transfer device layer 12 ′ was formed on the porous layer 2 by epitaxial growth. The epitaxial growth conditions at this time are shown below.

<Bake in hydrogen>
Hydrogen flow rate: 24 slm
Temperature: 950 ° C
Pressure: 600 Torr
Time: 2 seconds <Epitaxial growth>
Source gas: SiH ₂ Cl ₂
Temperature: 900 ° C
Flow rate: 160sccm
Pressure: 80 Torr
When epitaxial growth was performed under the conditions of time: 300 seconds or more, a silicon layer of about 2 μm was obtained as the device layer 12 ′.

  Next, as shown in FIG. 6B, a semiconductor device 12a is formed on the transfer device layer 12 '. Here, the semiconductor device 12a may include, for example, a CMOS, a bipolar transistor, a diode, a capacitor, a semiconductor integrated circuit such as a DRAM, a microprocessor, and / or a logic IC. However, there is no restriction on the type of the semiconductor device 12a.

  Next, as shown in FIG. 6C, the second adhesive layer 15 of the tape 100 is adhered to the device layer 12 ′ of the substrate 10. The tape 100 has a laminated structure including the first base member 18, the first adhesive layer 17, the second base member 16, and the second adhesive layer 15. Here, in the first embodiment, the first base member 18 is formed of a flexible material that transmits ultraviolet light, such as a PVC film. The first adhesive layer 17 is formed of a material whose adhesive strength is reduced by receiving ultraviolet light. The second base member 16 is made of, for example, polyester. The second base member 16 preferably has high rigidity in order to prevent damage to the semiconductor chip 12c during the operation of the semiconductor chip 12c. For example, the second base member 16 preferably has a thickness of 50 μm or more. The second adhesive layer 15 is formed of a material whose adhesive force is reduced by heat.

  Next, as shown in FIG. 6D, the substrate 10 is divided using the separation layer 32. By this division, a thinned substrate 12 ′ supported by the tape 100 is obtained. Such division can be performed by, for example, driving a fluid into the separation layer 32 or a side surface in the vicinity thereof.

  Next, as shown in FIG. 6E, a groove 19 having a depth of about 3 to 5 μm and a width of about 100 μm is formed by a dicer. Accordingly, the thinned substrate 12 ′, the second adhesive layer 15, the second base member 16, and the separation layer 32 ′ are divided into a plurality of semiconductor chips 12c, a plurality of chip adhesive layers 15a, and a plurality of chip base members 16a, respectively. The

The groove 19 can be formed according to a normal dicing method, and is performed by, for example, a blade, chemical etching, a YAG laser, a CO ₂ laser, an excimer laser, or the like.

  Next, as shown in FIG. 6F, the first base member 18 is stretched by applying a tensile force 20 to the first base member 18 to widen the interval between the semiconductor chips 12c. Thereby, at the time of abutment with the needle 22 in a later step, damage (for example, cracks, chipping) of the semiconductor chip 12c due to contact between adjacent semiconductor chips 13c can be prevented.

  Next, as shown in FIG. 6G, the first adhesive layer 17 is irradiated with ultraviolet light 21 through the first base member 18. Thereby, the adhesive force between the first base member 18 and the second base member 16 (chip base member 16a) by the first adhesive layer 17 is reduced, and the chip base member 16a can be easily peeled from the first adhesive layer 17. become. Here, for example, by locally irradiating the first adhesive layer 17 with ultraviolet light using a spot UV device or the like, the adhesive force of the first adhesive layer 17 is applied only to the portion of the semiconductor chip 12c to be picked up. Can weaken.

  Next, as shown in FIG. 6G, the needle 22 is abutted against the back side of the first base member 18, and the semiconductor chip 12c is picked up by an operation mechanism (not shown). At this time, the semiconductor chip 12c is picked up (ie, separated from the first adhesive layer 17) while being supported by the chip base member 16a via the chip adhesive layer 15a.

  Next, as shown in FIG. 6H, the picked-up semiconductor chip 12c is placed on the support substrate 24 so that the separation layer 32'a is on the lower side by an operation mechanism such as a vacuum chuck 23. Next, by applying heat to the chip adhesive layer 15a (second adhesive layer 15), the adhesive force is reduced, and the chip base member 16a is separated from the semiconductor chip 12c as shown in FIG. 6 (i). . Here, for example, a heater is provided in the vacuum chuck 23, and heat can be applied to the chip adhesive layer 15a by the heater.

  Next, as shown in FIG. 6J, a wire 25 for connecting the electrode of the support substrate 24 and the electrode of the semiconductor chip 12c is formed by wire bonding.

[Second Embodiment]
In the second embodiment, the first adhesive layer 17 is made of a material whose adhesive strength decreases below a predetermined level at the first temperature, and the second adhesive layer 15 has an adhesive strength at a second temperature higher than the second temperature. Can be made of a material that decreases below a predetermined level.

  The steps up to the production of the substrate 10 (FIGS. 6A and 6B) are the same as in the first embodiment.

  After the production of the substrate 10, the second adhesive layer 15 of the tape 100 is adhered to the device layer 12 ′ of the substrate 10 as shown in FIG. The tape 100 has a laminated structure including the first base member 18, the first adhesive layer 17, the second base member 16, and the second adhesive layer 15. Here, in the second embodiment, the first base member 18 is formed of a flexible member that transmits ultraviolet light, such as a PVC film. The first adhesive layer 17 is formed of a material whose adhesive force is reduced by heat at a temperature (T1). The second base member 16 is made of polyester or the like. The second base member 16 preferably has high rigidity in order to prevent damage to the semiconductor chip 12c during the operation of the semiconductor chip 12c. For example, the second base member 16 preferably has a thickness of 50 μm or more. The second adhesive layer 15 is formed of a material whose adhesive force is reduced by heat at temperature (T2). Here, T1 <T2.

  Next, as shown in FIG. 6D, the substrate 10 is divided using the separation layer 32. By this division, a thinned substrate 12 ′ supported by the tape 100 is obtained. Such division can be performed by, for example, driving a fluid into the separation layer 32 or a side surface in the vicinity thereof.

  Next, as shown in FIG. 6E, a groove 19 having a depth of about 3 to 5 μm and a width of about 100 μm is formed by a dicer. Accordingly, the thinned substrate 12 ′, the second adhesive layer 15, the second base member 16, and the separation layer 32 ′ are divided into a plurality of semiconductor chips 12c, a plurality of chip adhesive layers 15a, and a plurality of chip base members 16a, respectively. The

The groove 19 can be formed according to a normal dicing method, and is performed by, for example, a blade, chemical etching, a YAG laser, a CO ₂ laser, an excimer laser, or the like.

  Next, as shown in FIG. 6F, the first base member 18 is stretched by applying a tensile force 20 to the first base member 18 to widen the interval between the semiconductor chips 12c. Thereby, at the time of abutment with the needle 22 in a later step, damage (for example, cracks, chipping) of the semiconductor chip 12c due to contact between adjacent semiconductor chips 13c can be prevented.

  Next, as shown in FIG. 6G, heat of temperature (T1) is applied to the tape 100. Thereby, the adhesive force between the first base member 18 and the second base member 16 (chip base member 16a) by the first adhesive layer 17 is reduced, and the chip base member 16a can be easily peeled from the first adhesive layer 17. become. Here, the application of heat to the tape 100 can be performed by, for example, mounting a heater on an operation mechanism for picking up the semiconductor chip 12c and using the heater. By using such a heater, the adhesive force of the first adhesive layer 17 can be weakened only for the portion of the semiconductor chip 12c to be picked up.

  Next, as shown in FIG. 6G, the needle 22 is abutted against the back side of the first base member 18, and the semiconductor chip 12c is picked up by an operation mechanism (not shown). At this time, the semiconductor chip 12c is picked up (ie, separated from the first adhesive layer 17) while being supported by the chip base member 16a via the chip adhesive layer 15a.

  Next, as shown in FIG. 6H, the picked-up semiconductor chip 12c is placed on the support substrate 24 so that the formation surface of the semiconductor device 12a is directed downward by an operation mechanism such as a vacuum chuck 23. Next, by applying heat at a temperature (T2) to the chip adhesive layer 15a (second adhesive layer 15), the adhesive force is reduced, and as shown in FIG. The member 16a is separated. Here, for example, a heater is provided in the vacuum chuck 23, and heat can be applied to the chip adhesive layer 15a by the heater.

  By setting T1 <T2, it is possible to prevent the second base member 16 from being peeled off from the semiconductor chip 12c and to selectively peel off only the first base member 18 when the heat of temperature (T1) is applied. it can.

  Next, as shown in FIG. 6J, a wire 25 for connecting the electrode of the support substrate 24 and the electrode of the semiconductor chip 12c is formed by wire bonding.

[Third embodiment]
In the third embodiment, the second base member 16 is configured as a member having a low ultraviolet light transmittance, and both the first adhesive layer 17 and the second adhesive layer 15 are lowered to a predetermined level or less by the ultraviolet light. Consists of materials that

  The steps up to the production of the substrate 10 (FIGS. 6A and 6B) are the same as in the first embodiment.

After the production of the substrate 10, the second adhesive layer 15 of the tape 100 is adhered to the device layer 12 ′ of the substrate 10 as shown in FIG. The tape 100 has a laminated structure including the first base member 18, the first adhesive layer 17, the second base member 16, and the second adhesive layer 15. Here, in the third embodiment, the first base member 18 layer is formed of a flexible material that transmits ultraviolet light, such as a PVC film. The first base member 18 is formed of a flexible material that transmits ultraviolet light, such as a PVC film. The first adhesive layer 17 and the second adhesive layer 15 are formed of a material whose adhesive strength is reduced by receiving ultraviolet light. The second base member 16 is made of, for example, polyester. The second base member 16 preferably has high rigidity in order to prevent damage to the semiconductor chip 12c during the operation of the semiconductor chip 12c. For example, the second base member 16 preferably has a thickness of 50 μm or more. The second base member 16 has a sufficiently low ultraviolet light transmittance by applying fine particles of TiO ₂ or ZnO to a resin such as polyester.

  Next, as shown in FIG. 6D, the substrate 10 is divided using the separation layer 32. By this division, a thinned substrate 12 ′ supported by the tape 100 is obtained. Such division can be performed by, for example, driving a fluid into the separation layer 32 or a side surface in the vicinity thereof.

  Next, as shown in FIG. 6E, a groove 19 having a depth of about 3 to 5 μm and a width of about 100 μm is formed by a dicer. Accordingly, the thinned substrate 12 ′, the second adhesive layer 15, the second base member 16, and the separation layer 32 ′ are divided into a plurality of semiconductor chips 12c, a plurality of chip adhesive layers 15a, and a plurality of chip base members 16a, respectively. The

The groove 19 can be formed according to a normal dicing method, and is performed by, for example, a blade, chemical etching, a YAG laser, a CO ₂ laser, an excimer laser, or the like.

  Next, as shown in FIG. 6F, the first base member 18 is stretched by applying a tensile force 20 to the first base member 18 to widen the interval between the semiconductor chips 12c. Thereby, at the time of abutment with the needle 22 in a later step, damage (for example, cracks, chipping) of the semiconductor chip 12c due to contact between adjacent semiconductor chips 13c can be prevented.

  Next, as shown in FIG. 6G, the first adhesive layer 17 is irradiated with ultraviolet light 21 through the first base member 18. Thereby, the adhesive force between the first base member 18 and the second base member 16 (chip base member 16a) by the first adhesive layer 17 is reduced, and the chip base member 16a can be easily peeled from the first adhesive layer 17. become. Here, for example, by locally irradiating the first adhesive layer 17 with ultraviolet light using a spot UV device or the like, the adhesive force of the first adhesive layer 17 is applied only to the portion of the semiconductor chip 12c to be picked up. Can weaken.

  Next, as shown in FIG. 6G, the needle 22 is abutted against the back side of the first base member 18, and the semiconductor chip 12c is picked up by an operation mechanism (not shown). At this time, the semiconductor chip 12c is picked up (ie, separated from the first adhesive layer 17) while being supported by the chip base member 16a via the chip adhesive layer 15a.

  Next, as shown in FIG. 6H, the picked-up semiconductor chip 12c is placed on the support substrate 24 by the operation mechanism such as the vacuum chuck 23 so that the formation surface of the semiconductor device 12a faces down. Next, the adhesive force of the chip adhesive layer 15a is reduced by irradiating the chip adhesive layer 15a (second adhesive layer 15) with ultraviolet light, and as shown in FIG. 6 (i), the semiconductor chip 12c to the chip base member 16a. Isolate.

  Next, as shown in FIG. 6J, a wire 25 for connecting the electrode of the support substrate 24 and the electrode of the semiconductor chip 12c is formed by wire bonding.

[Fourth embodiment]
In the fourth embodiment, the second base member 16 is configured as a member having a low ultraviolet light transmittance, and both the first adhesive layer 17 and the second adhesive layer 15 are lowered in adhesive strength to a predetermined level or less by the ultraviolet light. Consists of materials that

  The steps up to the production of the substrate 10 (FIGS. 6A and 6B) are the same as in the first embodiment.

  After the production of the substrate 10, the second adhesive layer 15 of the tape 100 is adhered to the device layer 12 ′ of the substrate 10 as shown in FIG. The tape 100 has a laminated structure including the first base member 18, the first adhesive layer 17, the second base member 16, and the second adhesive layer 15. Here, in the fourth embodiment, the first base member 18 is formed of a flexible material that transmits ultraviolet light, such as a PVC film. The first base member 18 is formed of a flexible material that transmits ultraviolet light, such as a PVC film. The first adhesive layer 17 is formed of a material whose adhesive force is reduced by heat. The second base member 16 is made of polyester or the like. The second base member 16 preferably has high rigidity in order to prevent damage to the semiconductor chip 12c during the operation of the semiconductor chip 12c. For example, the second base member 16 preferably has a thickness of 50 μm or more. It is formed of a material whose adhesive strength is reduced by receiving ultraviolet light.

  Next, as shown in FIG. 6D, the substrate 10 is divided using the separation layer 32. By this division, a thinned substrate 12 ′ supported by the tape 100 is obtained. Such division can be performed by, for example, driving a fluid into the separation layer 32 or a side surface in the vicinity thereof.

  Next, as shown in FIG. 6E, a groove 19 having a depth of about 3 to 5 μm and a width of about 100 μm is formed by a dicer. Accordingly, the thinned substrate 12 ′, the second adhesive layer 15, the second base member 16, and the separation layer 32 ′ are divided into a plurality of semiconductor chips 12c, a plurality of chip adhesive layers 15a, and a plurality of chip base members 16a, respectively. The

The groove 19 can be formed according to a normal dicing method, and is performed by, for example, a blade, chemical etching, a YAG laser, a CO ₂ laser, an excimer laser, or the like.

  Next, as shown in FIG. 6F, the first base member 18 is stretched by applying a tensile force 20 to the first base member 18 to widen the interval between the semiconductor chips 12c. Thereby, at the time of abutment with the needle 22 in a later step, damage (for example, cracks, chipping) of the semiconductor chip 12c due to contact between adjacent semiconductor chips 13c can be prevented.

  Next, heat is applied to the tape 100 as shown in FIG. Thereby, the adhesive force between the first base member 18 and the second base member 16 (chip base member 16a) by the first adhesive layer 17 is reduced, and the chip base member 16a can be easily peeled from the first adhesive layer 17. become. Here, the application of heat to the tape 100 can be performed by, for example, mounting a heater on an operation mechanism for picking up the semiconductor chip 12c and using the heater. By using such a heater, the adhesive force of the first adhesive layer 17 can be weakened only for the portion of the semiconductor chip 12c to be picked up.

  Next, as shown in FIG. 6G, the needle 22 is abutted against the back side of the first base member 18, and the semiconductor chip 12c is picked up by an operation mechanism (not shown). At this time, the semiconductor chip 12c is picked up (ie, separated from the first adhesive layer 17) while being supported by the chip base member 16a via the chip adhesive layer 15a.

  Next, as shown in FIG. 4F, the picked-up semiconductor chip 12c is placed on the support substrate 24 by the operation mechanism such as the vacuum chuck 23 so that the formation surface of the semiconductor device 12a faces down. Next, the adhesive force of the chip adhesive layer 15a is reduced by irradiating the chip adhesive layer 15a (second adhesive layer 15) with ultraviolet light, and as shown in FIG. 6 (i), the semiconductor chip 12c to the chip base member 16a. Isolate.

  Next, as shown in FIG. 6J, a wire 25 for connecting the electrode of the support substrate 24 and the electrode of the semiconductor chip 12c is formed by wire bonding.

It is a figure explaining the background art regarding thinning and dicing of a device layer. It is sectional drawing which shows typically the tape of the 1st Embodiment of this invention. It is sectional drawing which shows typically the tape of 2nd Embodiment of this invention. It is a figure which shows typically the manufacturing method of the semiconductor chip of 3rd Embodiment of this invention. It is a figure which shows typically the manufacturing method of the semiconductor chip of 4th Embodiment of this invention. It is a figure which shows typically the manufacturing method of the semiconductor chip of 5th Embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Grinder 2 Semiconductor device 3, 3 'Wafer 4 Protective tape 5 Dicing tape 6 Dicing groove 7 Tensile force 8 Vacuum chuck 9 Needle 11 Grinder 12 Substrate 12' Thinned substrate 12a Semiconductor device 12c Semiconductor chip 13 Protective layer 14 Stage (support) )
15 second adhesive layer 16 second base member 17 first adhesive layer 18 first base member 19 dicing groove 20 tensile force 21 ultraviolet light or heat 22 needle 23 vacuum chuck 24 support substrate 31 grinder 32 separation layer 33 seed substrate 39 precut groove

Claims (11)

A first base member;
A first adhesive layer disposed on the first base member;
A second base member disposed on the first adhesive layer;
A second adhesive layer disposed on the second base member;
With
The tape according to claim 1, wherein the plasticity of the first base member is greater than the plasticity of the second base member.   The tape according to claim 1, wherein the adhesive force of the first adhesive layer and the adhesive force of the second adhesive layer are configured to be independently controllable.   The tape according to claim 1 or 2, wherein the second base member and the second adhesive layer are divided into a plurality of regions by grooves. A method for manufacturing a semiconductor chip, comprising:
A first base member; a first adhesive layer disposed on the first base member; a second base member disposed on the first adhesive layer; and a second disposed on the second base member. A preparation step of preparing a structure in which the second adhesive layer of the tape including the adhesive layer and the thinned substrate on which the semiconductor device is formed are bonded;
Grooves are formed in the thinned substrate, the second adhesive layer, and the second base member so that the thinned substrate, the second adhesive layer, and the second base member are respectively a plurality of semiconductor chips and a plurality of chip adhesive layers. And a dividing step of dividing into a plurality of chip base members,
Of the first adhesive layer and the second adhesive layer, the semiconductor chip is supported in a state where the adhesive force of the first adhesive layer is reduced and the semiconductor chip is supported by the chip base member via the chip adhesive layer. Separating from the first base member;
A method for manufacturing a semiconductor chip, comprising:   5. The method of manufacturing a semiconductor chip according to claim 4, further comprising a second separation step of separating the chip base member from the semiconductor chip by reducing an adhesive force of the chip adhesion layer. The preparation step includes
Supporting the first surface of the substrate on which the semiconductor device is formed on the first surface by a support, and thinning the substrate from the second surface side of the substrate to create the thinned substrate;
Bonding the tape to the thinned substrate;
The method for manufacturing a semiconductor chip according to claim 4, wherein the method includes: The preparation step includes
Producing a substrate having a device layer on which a semiconductor device is formed, and an isolation layer disposed under the device layer;
Bonding the second adhesive layer of the tape to the device layer;
Separating the device layer from the substrate as the thinned substrate using the separation layer;
The method for manufacturing a semiconductor chip according to claim 4, wherein the method includes: A method for manufacturing a semiconductor chip, comprising:
A first base member; a first adhesive layer disposed on the first base member; a second base member disposed on the first adhesive layer; and a second disposed on the second base member. An adhesive layer, the second base member is divided into a plurality of chip base members, and the second adhesive layer of the tape and the semiconductor device are formed by dividing the second adhesive layer into a plurality of chip adhesive layers A preparation step for preparing a structure in which the thinned substrate is bonded;
A dividing step of forming a groove in the thinned substrate and dividing the thinned substrate into a plurality of semiconductor chips each supported by the chip base member via the chip adhesive layer;
Of the first adhesive layer and the second adhesive layer, the semiconductor chip is supported in a state where the adhesive force of the first adhesive layer is reduced and the semiconductor chip is supported by the chip base member via the chip adhesive layer. Separating from the first base member;
A method for manufacturing a semiconductor chip, comprising:   9. The method of manufacturing a semiconductor chip according to claim 8, further comprising a second separation step of separating the chip base member from the semiconductor chip by reducing an adhesive force of the chip adhesive layer. The preparation step includes
Supporting the first surface of the substrate on which the semiconductor device is formed on the first surface by a support, and thinning the substrate from the second surface side of the substrate to create the thinned substrate;
Bonding the tape to the thinned substrate;
10. The method for manufacturing a semiconductor chip according to claim 8, wherein the method includes: The preparation step includes
Producing a substrate having a device layer on which a semiconductor device is formed, and an isolation layer disposed under the device layer;
Bonding the second adhesive layer of the tape to the device layer;
Separating the device layer from the substrate as the thinned substrate using the separation layer;
10. The method for manufacturing a semiconductor chip according to claim 8, wherein the method includes:

Images