JP2007016280A - METHOD OF FORMING Ni-P ELECTROPLATING COATING FILM AND THE COATING FILM - Google Patents

METHOD OF FORMING Ni-P ELECTROPLATING COATING FILM AND THE COATING FILM Download PDF

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JP2007016280A
JP2007016280A JP2005199153A JP2005199153A JP2007016280A JP 2007016280 A JP2007016280 A JP 2007016280A JP 2005199153 A JP2005199153 A JP 2005199153A JP 2005199153 A JP2005199153 A JP 2005199153A JP 2007016280 A JP2007016280 A JP 2007016280A
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plating
film
electroplating
complexing agent
saccharin
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JP4157117B2 (en
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Shigeyuki Suga
茂幸 須賀
Kana Haruki
佳奈 春木
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Taiho Kogyo Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a Ni-P electroplating coating film having high hardness even in a plated state, and excellent sliding performance. <P>SOLUTION: The electroplating is carried out in a plating bath containing Ni ion, phosphite ion, a complexing agent and 0.15-0.25 wt.% saccharin, wherein the complexing agent is a mixture complexing agent comprising lactic acid, glycine and acetic acid in a ratio (lactic acid):(glycine):(acetic acid) of (0.5-1.0):(1.0-2.8):(0.5-1.0). <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、電気Ni-Pめっき皮膜の成膜方法に関するものであり、さらに詳しく述べるならば、めっきした状態で、摺動部材に適した高い硬度を有するNi-Pめっき皮膜を電気めっきで成膜する方法に関するものである。   The present invention relates to a method for forming an electric Ni-P plating film. More specifically, the present invention provides a Ni-P plating film having high hardness suitable for a sliding member by electroplating in a plated state. The present invention relates to a film forming method.

Ni-Pめっきは無電解めっき(「化学めっき」といわれることもある)と電気めっき(「電解析出」といわれることもある)に大別される。
無電解Ni-Pめっきは、めっき後300〜400℃で熱処理することにより皮膜硬度が上昇し耐摩耗性の優れた皮膜となることはよく知られている(非特許文献1:「無電解めっき」基礎と応用、電気鍍金研究会編、2001年4月27日発行第37頁(図2.9参照))。この図2.9では、無電解Ni-Pめっき皮膜が熱処理により硬化する現象は組織が非晶質から結晶質に変化することと関連していると説明されている。
Ni-P plating is broadly divided into electroless plating (sometimes referred to as “chemical plating”) and electroplating (sometimes referred to as “electrolytic deposition”).
It is well known that electroless Ni-P plating has a coating hardness that is increased by heat treatment at 300 to 400 ° C. after plating (Non-Patent Document 1: “Electroless plating”). “Basics and Applications, edited by the Electroplating Society, April 27, 2001, page 37 (see Figure 2.9)). In FIG. 2.9, it is explained that the phenomenon that the electroless Ni—P plating film is hardened by heat treatment is related to the change of the structure from amorphous to crystalline.

無電解Ni-Pめっきの析出機構については、非特許文献2:前掲無電解めっき、第27−28頁に幾つかの説が紹介されているが、原子状水素による析出機構説によると、1分子のフォスフィン酸イオンの酸化により生じた2電子がNiイオンを還元するというものである。このような反応機構で起こる無電解めっきは、電気めっきよりも反応速度が遅くなっている。
無電解Ni-Pめっきでは、Niイオンと安定な可溶性錯体を形成するとともにNiがリン酸塩として沈殿することを防ぐために各種錯化剤が使用されている(非特許文献2:前掲「無電解めっき」基礎と応用、第26頁、表2.6)。
Regarding the deposition mechanism of electroless Ni-P plating, several theories have been introduced in Non-Patent Document 2: Electroless Plating, pages 27-28. According to the deposition mechanism theory by atomic hydrogen, 1 The two electrons generated by the oxidation of the molecular phosphinate ion reduce the Ni ion. Electroless plating that occurs in such a reaction mechanism has a slower reaction rate than electroplating.
In electroless Ni-P plating, various complexing agents are used to form a stable soluble complex with Ni ions and prevent Ni from precipitating as a phosphate (Non-patent Document 2: Id. Plating "Fundamentals and Applications, page 26, Table 2.6).

特許文献1:特開平6−240437号公報によると、Al合金基材上にめっきしたままの状態で硬度がHv400程度の無電解Ni-Pめっき皮膜を施し、その後これを熱処理により硬化させることが記載されている。また、無電解めっきの代わりに電気めっきでもよいでもよいとの記載があるから、上記程度の硬度を有するNi-P電気めっき皮膜の成膜は可能であると、この特許文献では考えられている。   Patent Document 1: According to Japanese Patent Laid-Open No. 6-240437, an electroless Ni-P plating film having a hardness of about Hv400 is applied on an Al alloy base material while being plated, and then cured by heat treatment. Are listed. Further, since there is a description that electroplating may be used instead of electroless plating, it is considered in this patent document that a Ni-P electroplating film having the above degree of hardness can be formed. .

電気Ni-Pめっきでは、亜リン酸を添加したワット浴から電析された9.5 wt%,11.5wt% 及び14.4wt%のPを含有する非晶質Ni-P系めっき膜は300Kで約Hv650 〜750の硬度を有しており、600〜700Kの温度で硬化して硬度がHv1100以上に達することが、非特許文献3、金属表面技術Vol31 (1980), No.12,第667〜672頁に記載されている。   In electro Ni-P plating, amorphous Ni-P plating films containing 9.5 wt%, 11.5 wt% and 14.4 wt% P electrodeposited from a watt bath containing phosphorous acid are about Hv650 at 300K. It has a hardness of ˜750, and it can be cured at a temperature of 600˜700 K to reach a hardness of Hv1100 or higher. Non-Patent Document 3, Metal Surface Technology Vol31 (1980), No. 12, pp. 667-672 It is described in.

特許文献2:特表2003−511563号公報によると、Ni,Fe,Sn,In,Pd,Au 及びBiの少なくとも1種を含有し、残部が35%を超えるCo合金を、o-ベンゾスルフィミト(サッカリン)を添加したブチルジオールを光沢剤として添加した電気めっき浴を用いて電気めっきにより成膜する方法が記載されている。この電気めっきを施した冷延材を絞り及びしごき加工することにより、めっき層にひび割れを起こさせてバッテリーの電気めっき浴との接触面積を増大する。
特開平6−240437号公報 特表2003−511563号公報 「無電解めっき」基礎と応用、電気鍍金研究会編、2001年4月27日発行、第37頁(図2.9)) 「無電解めっき」基礎と応用、電気鍍金研究会編、2001年4月27日発行、第26〜28頁(図2.9参照) 金属表面技術Vol31 (1980), No.12,第667〜672頁
Patent Document 2: According to Japanese Patent Publication No. 2003-511563, a Co alloy containing at least one of Ni, Fe, Sn, In, Pd, Au and Bi, with the balance exceeding 35%, A method of forming a film by electroplating using an electroplating bath to which butyl diol to which mito (saccharin) is added is added as a brightener is described. By drawing and ironing the cold-rolled material subjected to the electroplating, the plating layer is cracked to increase the contact area of the battery with the electroplating bath.
Japanese Patent Laid-Open No. 6-240437 Special table 2003-511563 gazette “Electroless Plating” Fundamentals and Applications, edited by Electroplating Study Group, published on April 27, 2001, page 37 (Figure 2.9)) "Electroless plating" basics and application, edited by Electroplating Research Group, published on April 27, 2001, pages 26-28 (see Figure 2.9) Metal Surface Technology Vol31 (1980), No. 12, pp. 667-672

無電解Ni-Pめっき皮膜は析出直後の硬さはHV500程度と低く、耐摩耗材料として使用する場合は熱処理により硬度をHv720程度に上昇させることが必須である。しかしながら、熱処理温度は300〜400℃であるために、耐熱性の観点からアルミニウムなどの基材に適用することは困難である。また、反応速度が電気めっきに比較して遅い欠点がある。     The electroless Ni-P plating film has a hardness just after deposition as low as about HV500, and when used as an abrasion resistant material, it is essential to increase the hardness to about Hv720 by heat treatment. However, since the heat treatment temperature is 300 to 400 ° C., it is difficult to apply to a substrate such as aluminum from the viewpoint of heat resistance. In addition, there is a drawback that the reaction rate is slower than electroplating.

一方、電気Ni-Pめっき皮膜は、従来耐食性、光沢を利用した装飾用などに使用されており、めっき直後の硬度が低いために、耐摩耗性用途には不適切であった。そこで、耐摩耗性用皮膜としては、セラミックなどの硬質粒子を分散させた電気Niめっきが使用されていた。しかしながら、硬質粒子は相手材を摩滅することや、あるいは逆に摺動中にめっき表面から脱落する可能性が高い。一方、非晶質電気Ni-Pめっきに関する非特許文献では、非加熱状態の性質としては耐食性及び光沢に言及されているに過ぎない。   On the other hand, the electric Ni-P plating film has been conventionally used for decoration, etc. utilizing corrosion resistance and luster, and has a low hardness immediately after plating, so it was unsuitable for wear resistance applications. Therefore, electric Ni plating in which hard particles such as ceramics are dispersed has been used as a film for wear resistance. However, the hard particles are likely to wear away the mating material or, on the contrary, fall off the plating surface during sliding. On the other hand, non-patent literature relating to amorphous electric Ni-P plating only mentions corrosion resistance and gloss as properties in the non-heated state.

本発明のNi-P系めっき方法は、Niイオン、亜リン酸イオン、特定の混合錯化剤及び0.15〜0.25wt%のサッカリンを含有する電気めっき浴中にて電気めっきを行なうことを特徴とするものである。本発明が使用する錯化剤は重量比率で乳酸:グリシン:酢酸= 0.5〜1.0: 1.0〜2.8: 0.5〜1.0からなる混合錯化剤である。     The Ni-P plating method of the present invention is characterized in that electroplating is performed in an electroplating bath containing Ni ions, phosphite ions, a specific mixed complexing agent, and 0.15-0.25 wt% saccharin. To do. The complexing agent used in the present invention is a mixed complexing agent composed of lactic acid: glycine: acetic acid = 0.5 to 1.0: 1.0 to 2.8: 0.5 to 1.0 by weight ratio.

本発明による電気めっきは、従来のめっき浴組成と同じように、Niイオンと亜リン酸イオンが沈殿せずかつ電析可能なように保たれており、基本成分がNiイオンと亜リン酸イオンであるめっき浴で行なうものである。好ましくは、Ni2+イオンを含有する亜リン酸浴で行なうことができる。Ni2+イオン濃度は25〜45wt%が好ましく、35.0wt%が最も好ましい。亜リン酸の濃度は4.3〜4.9wt%が好ましく、4.6wt%が最も好ましい。残部は後述の錯化剤、サッカリン及びドデシル硫酸ナトリウムを除いて水である。但し、Ni塩を構成する陰イオン例えば、SO4 2‐, Cl-など、pH調整剤、例えばNaOHなどを使用することができる。またNi電気めっきでは、応力緩和剤が補助剤として添加されることがあるが、後述のとおり、Ni-P系電気めっきではサッカリンが応力緩和剤の効果をもち、その他の応力緩和剤は併用しても同等の効果は達成しない。さらに、平滑化剤も公知であるが、本発明においてはサッカリン及びドデシル硫酸ナトリウムがその効果をもち、他の平滑化剤は併用しても同等の効果を達成しない。 In the electroplating according to the present invention, as in the conventional plating bath composition, Ni ions and phosphite ions are kept so as not to precipitate and can be electrodeposited, and the basic components are Ni ions and phosphite ions. This is performed in a plating bath. Preferably, it can be performed in a phosphorous acid bath containing Ni 2+ ions. Ni 2+ ion concentration is preferably 25~45wt%, and most preferably 35.0 wt%. The concentration of phosphorous acid is preferably 4.3 to 4.9 wt%, and most preferably 4.6 wt%. The balance is water except for the complexing agent, saccharin and sodium dodecyl sulfate described below. However, an anion constituting the Ni salt, for example, SO 4 2− , Cl 2 , pH adjusting agent, for example, NaOH can be used. In Ni electroplating, a stress relaxation agent may be added as an auxiliary agent. As described later, in Ni-P electroplating, saccharin has the effect of a stress relaxation agent, and other stress relaxation agents are used in combination. However, the same effect is not achieved. Further, although smoothing agents are also known, in the present invention, saccharin and sodium dodecyl sulfate have the effect, and even if other smoothing agents are used in combination, the same effect is not achieved.

めっき浴の温度は80〜90℃が好ましく、85℃が最も好ましい。電流密度は1.8〜10A/dm2が好ましく、2A/dm2が最も好ましい。pHは2.2〜2.8が好ましく、2.5が最も好ましい。また、電気めっきは通常の方法で行うが、隔膜電解を行ってもよい。 The temperature of the plating bath is preferably 80 to 90 ° C, and most preferably 85 ° C. The current density is preferably 1.8~10A / dm 2, 2A / dm 2 and most preferably. The pH is preferably 2.2 to 2.8, and most preferably 2.5. Moreover, although electroplating is performed by a normal method, diaphragm electrolysis may be performed.

驚くべきことに、特定の混合錯化剤とサッカリンを含有するNi-P電気めっき浴から析出するNi-Pめっき皮膜は結晶構造が著しく発達し、これに伴い硬度の著しい変化が起こり、めっき状態で耐摩耗性皮膜として使用できる、結晶子の大きさが90オングストローム以上であり、かつ皮膜硬度がHv750以上であるNi-P系電気めっき皮膜を得ることができた。
以下、本発明者らが、Ni線を陽極とし、バフ研磨したAl板を陰極として、めっき浴温度80℃で行なった電気めっき実験を参照して本発明を説明する。
Surprisingly, the Ni-P plating film deposited from a Ni-P electroplating bath containing a specific mixed complexing agent and saccharin has a markedly developed crystal structure, which causes a significant change in hardness, resulting in a plating state. Thus, a Ni-P electroplating film having a crystallite size of 90 angstroms or more and a film hardness of Hv750 or more, which can be used as a wear-resistant film, was obtained.
Hereinafter, the present invention will be described with reference to an electroplating experiment conducted at a plating bath temperature of 80 ° C. using Ni wire as an anode and a buffed Al plate as a cathode.

図1は、錯化剤10.0wt%, 亜リン酸4.6wt%, 硫酸ニッケル35.3wt%,pH約2.5のめっき浴を用いてサッカリン濃度を変えて、電気めっきを行なった実験結果を示し、不均一歪をX線解析法により測定した。この図から、サッカリンは応力緩和剤として著しい効果をもっているといえる。
図2は、図1と同じ条件下での実験において結晶子の大きさの変化を示している。なお、結晶粒子の大きさはシェラーの式であるε=λ/Bcosθの計算式で求めた。ここでλはX線回折波長(オングストローム)であり、Bは積分幅(rad)であり、θは回折角度(°)である。
Fig. 1 shows the experimental results of electroplating using a plating bath of 10.0 wt% complexing agent, 4.6 wt% phosphorous acid, 35.3 wt% nickel sulfate, and a pH of about 2.5 and varying the saccharin concentration. Uniform strain was measured by X-ray analysis. From this figure, it can be said that saccharin has a remarkable effect as a stress relaxation agent.
FIG. 2 shows the change in crystallite size in the experiment under the same conditions as FIG. The size of the crystal grains was obtained by the calculation formula of ε = λ / Bcosθ, which is Scherrer's formula. Here, λ is an X-ray diffraction wavelength (angstrom), B is an integral width (rad), and θ is a diffraction angle (°).

図3は、サッカリン濃度を0.2wt%と一定にした、電気めっきの電流密度とめっき後の皮膜硬度との関係を示しており、電流密度が0.01A/cm 2 (1A/dm2)以上において、従来よりも高い硬度が得られるが、特に0.02A/cm2(2A/dm2)以上において熱処理後のNi-P系無電解めっきと同等の硬度が得られている。この電流密度における電流効率は約90%であり、最大110μm/hのめっき速度が得られる。これは無電解めっきのめっき速度の数倍に相当する。勿論、電流密度が高い方がめっき皮膜の成長速度が高くなるが、0.10A/cm2(10A/dm2)を超えると、皮膜の緻密性が低下して相手材への攻撃性が高くなり焼付きが生じやすくなる、水素ガスが発生して皮膜成長が低下する、また膜厚の均一性が不良になる、といった悪影響が出てきてしまう。 Fig. 3 shows the relationship between the current density of electroplating and the film hardness after plating when the saccharin concentration is constant at 0.2 wt%. When the current density is 0.01 A / cm 2 (1 A / dm 2 ) or more, Although higher hardness than the conventional one can be obtained, the hardness equivalent to that of Ni-P-based electroless plating after heat treatment is obtained especially at 0.02 A / cm 2 (2 A / dm 2 ) or more. The current efficiency at this current density is about 90%, and a maximum plating rate of 110 μm / h can be obtained. This corresponds to several times the plating speed of electroless plating. Of course, the higher the current density, the higher the growth rate of the plating film. However, if the current density exceeds 0.10 A / cm 2 (10 A / dm 2 ), the denseness of the film decreases and the attack on the mating material increases. Adverse effects such as seizure are likely to occur, hydrogen gas is generated to reduce film growth, and film thickness uniformity is poor.

図4は、図1の電気めっき条件で成膜された皮膜のX線回折結果を示しており、サッカリンの添加量とともにNiの(111)面強度が高くなっていることが分かる。これらの図1,2及び4より、0.2wt%以上のサッカリンが皮膜構造の結晶化に寄与していることが分かる。   FIG. 4 shows the X-ray diffraction result of the film formed under the electroplating conditions of FIG. 1, and it can be seen that the (111) plane strength of Ni increases with the amount of saccharin added. From FIGS. 1, 2 and 4, it can be seen that 0.2 wt% or more of saccharin contributes to the crystallization of the film structure.

図5は、錯化剤10.0wt%, 亜リン酸4.6wt%, 硫酸ニッケル35.3wt%,pH約2.5、電流密度0.02A/cm2のめっき浴においてサッカリンの添加量を変化させた実験において、得られためっき膜の皮膜硬度を示している。このグラフより、サッカリン添加量が0.15〜0.25wt%において、摺動皮膜に適した高い皮膜硬度が得られることが分かる。 FIG. 5 shows an experiment in which the amount of saccharin added was changed in a plating bath of 10.0 wt% complexing agent, 4.6 wt% phosphorous acid, 35.3 wt% nickel sulfate, pH of about 2.5, and current density of 0.02 A / cm 2 . The film hardness of the obtained plating film is shown. From this graph, it can be seen that when the saccharin addition amount is 0.15 to 0.25 wt%, a high film hardness suitable for the sliding film can be obtained.

サッカリンが添加された電気めっき浴において、特定の混合錯化剤が添加されていないと,皮膜形態が悪く剥離を生じ、更に電流効率も極めて悪化してしまうが、錯化剤の添加により皮膜性状・電流効率ともに良好にすることができる。 錯化剤としては、20〜30g/Lの乳酸、50〜65g/Lのグリシン、20〜30g/Lの酢酸を使用することができ、これら3種の錯化剤を混合比で、乳酸:グリシン:酢酸= 0.5〜1.0: 1.0〜2.8: 0.5〜1.0となるように混合してなる混合錯化剤を添加することが必要である。ここで、前記混合錯化剤のめっき浴への好ましい添加量は1.0 〜30.0wt%であり、最も好ましい添加量は10.0 wt%である。なお、前記範囲以外、つまり上記錯化剤の添加が3種のうちから1〜2種のみであったり、錯化剤濃度もしくは/および混合比が上記それぞれの範囲から外れたりした場合には、良好な皮膜性状・電流効率を得ることができない。上記錯化剤3種の最も好ましい濃度はそれぞれ、乳酸:25g/L, グリシン:58g/L, 酢酸:25g/Lであり、最も好ましい混合比は、乳酸:グリシン:酢酸=25:58:25である。   If a specific mixed complexing agent is not added in an electroplating bath to which saccharin has been added, the film form will be poor and peeling will occur, and the current efficiency will be extremely deteriorated. -Both current efficiency can be improved. As the complexing agent, 20 to 30 g / L lactic acid, 50 to 65 g / L glycine, and 20 to 30 g / L acetic acid can be used. These three complexing agents are mixed at a mixing ratio of lactic acid: It is necessary to add a mixed complexing agent mixed so that glycine: acetic acid = 0.5 to 1.0: 1.0 to 2.8: 0.5 to 1.0. Here, the preferable addition amount of the mixed complexing agent to the plating bath is 1.0 to 30.0 wt%, and the most preferable addition amount is 10.0 wt%. In addition, when the addition of the complexing agent is only one or two of the three types, or the complexing agent concentration or / and the mixing ratio is out of the above ranges, other than the above range, Good film properties and current efficiency cannot be obtained. The most preferred concentrations of the three complexing agents are lactic acid: 25 g / L, glycine: 58 g / L, and acetic acid: 25 g / L. The most preferred mixing ratio is lactic acid: glycine: acetic acid = 25: 58: 25 It is.

図6は、0.2wt%サッカリン添加浴にさらに添加されたドデシル硫酸ナトリウムの濃度と皮膜硬度との関係を示すグラフである。添加されたドデシル硫酸ナトリウムは0.2wt%以下では皮膜硬度にほとんど影響を与えないことを示している。但し、ドデシル硫酸ナトリウムは皮膜表面を平滑化する平滑化剤の効果が認められた。   FIG. 6 is a graph showing the relationship between the concentration of sodium dodecyl sulfate further added to the 0.2 wt% saccharin addition bath and the film hardness. It shows that the added sodium dodecyl sulfate has almost no influence on the film hardness at 0.2 wt% or less. However, sodium dodecyl sulfate was recognized as a smoothing agent that smoothes the surface of the film.

本発明によると、高速で、しかも熱処理なしで高硬度の皮膜が得られるため、Al合金等熱処理により軟化する基材に耐摩耗性皮膜を形成することができる。また、皮膜析出速度が無電解めっきに比べて高いので、生産性が向上しコスト面で有利である。   According to the present invention, a high-hardness film can be obtained at high speed and without heat treatment, so that an abrasion-resistant film can be formed on a base material that is softened by heat treatment such as an Al alloy. Moreover, since the film deposition rate is higher than that of electroless plating, the productivity is improved, which is advantageous in terms of cost.

電気めっき浴中のサッカリン濃度と不均一歪みの関係を示すグラフである。It is a graph which shows the relationship between the saccharin density | concentration in an electroplating bath, and nonuniform distortion. 電気めっき浴中のサッカリン濃度と結晶子の大きさの関係を示すグラフである。It is a graph which shows the relationship between the saccharin density | concentration in an electroplating bath, and the magnitude | size of a crystallite. 電気めっき浴の電流密度と皮膜硬度との関係を示すグラフである。It is a graph which shows the relationship between the current density of an electroplating bath, and film hardness. サッカリン電気めっき浴から得られた皮膜のX線回折像である。2 is an X-ray diffraction image of a film obtained from a saccharin electroplating bath. 電気めっき浴中のサッカリン濃度と皮膜硬度の関係を示すグラフである。It is a graph which shows the relationship between the saccharin density | concentration in an electroplating bath, and film hardness. 電気めっき浴のドデシル硫酸ナトリウム濃度と皮膜硬度の関係を示すグラフである。It is a graph which shows the relationship between sodium dodecyl sulfate density | concentration of an electroplating bath, and film | membrane hardness.

Claims (4)

Ni-P系めっき皮膜の成膜方法において、Niイオン、亜リン酸イオン、錯化剤及び0.15〜0.25wt%のサッカリンを含有するとともに、前記錯化剤が重量比率で乳酸:グリシン:酢酸= 0.5〜1.0: 1.0〜2.8: 0.5〜1.0からなる混合錯化剤であるめっき浴中にて電気めっきを行なうことを特徴とするNi-P系めっき皮膜の成膜方法。 In the film forming method of the Ni-P-based plating film, Ni ion, phosphite ion, complexing agent and 0.15-0.25 wt% saccharin are contained, and the complexing agent is lactic acid: glycine: acetic acid = weight ratio. 0.5-1.0: 1.0-2.8: A method for forming a Ni-P plating film, wherein electroplating is performed in a plating bath which is a mixed complexing agent comprising 0.5-1.0. 前記亜リン酸イオンの一部又は全部に替えてリン酸イオンを含有することを特徴とする請求項1記載のNi-P系めっき皮膜の成膜方法。 The method for forming a Ni-P-based plating film according to claim 1, wherein phosphate ions are contained in place of some or all of the phosphite ions. 前記電気めっき浴がさらにドデシル硫酸ナトリウムを含有することを特徴とする請求項1又は2記載のNi-P系めっき皮膜の成膜方法。 The Ni-P plating film forming method according to claim 1 or 2, wherein the electroplating bath further contains sodium dodecyl sulfate. 重量比率で乳酸:グリシン:酢酸= 0.5〜1.0: 1.0〜2.8: 0.5〜1.0からなる混合錯化剤及び0.15〜0.25wt%のサッカリンを含有するめっき浴により電解析出された90オングストローム以上の結晶子からなり、かつ皮膜硬度がHv750以上であるNi-P系電気めっき皮膜。
Crystals of 90 angstroms or more electrolytically deposited by a plating bath containing a mixed complexing agent consisting of lactic acid: glycine: acetic acid = 0.5 to 1.0: 1.0 to 2.8: 0.5 to 1.0 and 0.15 to 0.25 wt% saccharin by weight ratio Ni-P-based electroplated film that consists of a child and has a film hardness of Hv750 or higher.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018053499A1 (en) * 2016-09-19 2018-03-22 University Of Central Florida Research Foundation, Inc. Production of nanoporous films
US11193215B2 (en) 2017-04-20 2021-12-07 Aisin Seiki Kabushiki Kaisha Deposition method of Ni—P—B system electroplating film, the film, and slide member comprising the film

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018053499A1 (en) * 2016-09-19 2018-03-22 University Of Central Florida Research Foundation, Inc. Production of nanoporous films
US11697885B2 (en) 2016-09-19 2023-07-11 University Of Central Florida Research Foundation, Inc. Production of nanoporous films
US11193215B2 (en) 2017-04-20 2021-12-07 Aisin Seiki Kabushiki Kaisha Deposition method of Ni—P—B system electroplating film, the film, and slide member comprising the film

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