JP2007000931A - Laser machining apparatus - Google Patents

Laser machining apparatus Download PDF

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JP2007000931A
JP2007000931A JP2006135159A JP2006135159A JP2007000931A JP 2007000931 A JP2007000931 A JP 2007000931A JP 2006135159 A JP2006135159 A JP 2006135159A JP 2006135159 A JP2006135159 A JP 2006135159A JP 2007000931 A JP2007000931 A JP 2007000931A
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laser beam
lens
condensing
workpiece
condensing point
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JP4791248B2 (en
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Keiji Nomaru
圭司 能丸
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Disco Corp
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Disco Abrasive Systems Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26

Abstract

<P>PROBLEM TO BE SOLVED: To provide a laser machining apparatus which has a simple structure and can simultaneously generate two modified layers piled in the thickness direction on a workpiece. <P>SOLUTION: The laser machining apparatus is equipped with a laser beam irradiation means 4 which irradiates laser beam permeable to the workpiece 2 held by a chuck table 3, and a moving means for relatively moving the chuck table 3 and the laser beam irradiation means 4 for machining, wherein the laser beam irradiation means 4 includes a laser beam oscillation means 5, an optical transmission means 7 to transmit the laser beam generated by the laser beam oscillation means, and a converging lens 8 to converge the laser beam transmitted by the optical transmission means. The optical transmission means 7 has a birefringence lens 72 to separate the laser beam generated by the laser beam oscillation means 5 into normal beam and extraordinary beam. The converging lens 8 converges respectively the normal beam and the extraordinary beam separated by the birefringence lens 72, and forms the normal beam converging point and the extraordinary beam converging point. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、半導体ウエーハ等の被加工物に対して透過性を有するパルスレーザー光線等のレーザー光線を照射し、被加工物の内部に変質層を形成するレーザー加工装置に関する。   The present invention relates to a laser processing apparatus that irradiates a workpiece such as a semiconductor wafer with a laser beam such as a pulsed laser beam having transparency, and forms a deteriorated layer inside the workpiece.

半導体デバイス製造工程においては、シリコン基板、サファイア基板、炭化珪素基板、リチウムタンタレート基板、ガラス基板或いは石英基板の如き適宜の基板を含むウエーハの表面に格子状に形成されたストリートと呼ばれる分割予定ラインによって複数の領域が区画され、この区画された領域にＩＣ、ＬＳＩ等の回路（機能素子）を形成する。そして、ウエーハを分割予定ラインに沿って切断することにより機能素子が形成された領域を分割して個々の半導体デバイスを製造している。ウエーハを分割するための方法としては、レーザー光線を利用する種々の様式が提案されている。   In the semiconductor device manufacturing process, the dividing lines called streets formed in a lattice pattern on the surface of a wafer including an appropriate substrate such as a silicon substrate, a sapphire substrate, a silicon carbide substrate, a lithium tantalate substrate, a glass substrate or a quartz substrate. A plurality of regions are partitioned by this, and circuits (functional elements) such as ICs and LSIs are formed in the partitioned regions. Then, each semiconductor device is manufactured by dividing the region in which the functional element is formed by cutting the wafer along the division line. Various methods using a laser beam have been proposed as a method for dividing the wafer.

半導体ウエーハ等の板状の被加工物を分割する方法として、その被加工物に対して透過性を有するパルスレーザー光線を用い、分割すべき領域の内部に集光点を合わせてパルスレーザー光線を照射するレーザー加工方法も試みられている。このレーザー加工方法を用いた分割方法は、被加工物の一方の面側から内部に集光点を合わせて被加工物に対して透過性を有する例えば波長が１０６４ｎｍのパルスレーザー光線を照射し、被加工物の内部に分割予定ラインに沿って変質層を連続的に形成し、この変質層が形成されることによって強度が低下した分割予定ラインに沿って外力を加えることにより、被加工物を分割するものである。（例えば、特許文献１参照。）
特許第３４０８８０５号公報 As a method of dividing a plate-like workpiece such as a semiconductor wafer, a pulsed laser beam having transparency to the workpiece is used, and a focused laser beam is irradiated inside the region to be divided and irradiated with the pulsed laser beam. Laser processing methods have also been attempted. The dividing method using this laser processing method irradiates a pulse laser beam having a wavelength of 1064 nm, for example, having a light converging point from one surface side of the work piece and having a converging point inside, and transmitting the work piece. The workpiece is divided by continuously forming a deteriorated layer along the planned division line inside the workpiece and applying external force along the planned division line whose strength has been reduced by the formation of this modified layer. To do. (For example, refer to Patent Document 1.)
Japanese Patent No. 3408805

しかるに、ウエーハに外力を加えて分割予定ラインに沿って精密に破断せしめるためには、変質層の厚さ、即ちウエーハの厚さ方向における変質層の寸法を比較的大きくすることが必要である。上述したレーザー加工方法によって形成される変質層の厚さはパルスレーザー光線の集光点近傍において１０〜５０μmであるため、変質層の厚さを増大せしめるためにはパルスレーザー光線の集光点の位置をウエーハの厚さ方向に変位せしめて、パルスレーザー光線とウエーハとを分割予定ラインに沿って繰り返し相対的に移動せしめることが必要である。従って、特にウエーハの厚さが比較的厚い場合、ウエーハを精密に破断するのに必要な厚さの変質層の形成に長時間を要する。   However, in order to apply an external force to the wafer and break it precisely along the planned dividing line, it is necessary to relatively increase the thickness of the deteriorated layer, that is, the dimension of the deteriorated layer in the thickness direction of the wafer. Since the thickness of the altered layer formed by the laser processing method described above is 10 to 50 μm in the vicinity of the condensing point of the pulse laser beam, in order to increase the thickness of the altered layer, the position of the condensing point of the pulse laser beam is set. It is necessary to move the pulse laser beam and the wafer repeatedly relative to each other along the planned dividing line by displacing the wafer in the thickness direction. Therefore, particularly when the wafer is relatively thick, it takes a long time to form an altered layer having a thickness necessary for precisely breaking the wafer.

上記問題解消するため、パルスレーザー光線の集光点を被加工物の厚さ方向に複数形成し、複数の変質層を同時に形成するレーザー加工装置が提案されている。（例えば、特許文献２参照。）
特開２００５−２８４３８号公報 In order to solve the above problem, there has been proposed a laser processing apparatus in which a plurality of condensing points of a pulse laser beam are formed in the thickness direction of a workpiece, and a plurality of deteriorated layers are simultaneously formed. (For example, see Patent Document 2.)
JP 2005-28438 A

上記公報に開示されたレーザー加工装置によれば、被加工物の厚さ方向に形成される複数の集光点の部位に変質層を同時に形成することができる。しかしながら、このレーザー加工装置は、複数の集光点を形成するための機構が比較的複雑であり、実用的には必ずしも満足し得るものではない。   According to the laser processing apparatus disclosed in the above publication, it is possible to simultaneously form a deteriorated layer at a plurality of condensing points formed in the thickness direction of the workpiece. However, this laser processing apparatus has a relatively complicated mechanism for forming a plurality of condensing points, and is not always practically satisfactory.

本発明は上記事実に鑑みてなされたものであり、その主たる技術的課題は、簡単な構成で被加工物の厚さ方向に２層の変質層を同時に形成することができるレーザー加工装置を提供することである。   The present invention has been made in view of the above-mentioned facts, and its main technical problem is to provide a laser processing apparatus capable of simultaneously forming two altered layers in the thickness direction of a workpiece with a simple configuration. It is to be.

上記主たる技術的課題を解決するために、本発明によれば、被加工物を保持するチャックテーブルと、該チャックテーブルに保持された被加工物に該被加工物に対して透過性を有するレーザー光線を照射するレーザー光線照射手段と、該チャックテーブルと該レーザー光線照射手段とを相対的に加工送りする加工送り手段とを具備し、
該レーザー光線照射手段は、レーザー光線発振手段と、該レーザー光線発振手段が発振するレーザー光線を伝送する光学伝送手段と、該光学伝送手段によって伝送されたレーザー光線を集光せしめる集光レンズとを含んでいる、レーザー加工装置において、
該光学伝送手段は、該レーザー光線発振手段が発振するレーザー光線を常光と異常光に分離する複屈折レンズを備え、
該集光レンズは、該複屈折レンズによって分離された常光と異常光をそれぞれ集光せしめ、常光の集光点と異常光の集光点とを形成する、
ことを特徴とするレーザー加工装置が提供される。 In order to solve the above main technical problems, according to the present invention, a chuck table for holding a workpiece, and a laser beam having transparency to the workpiece on the workpiece held on the chuck table. Laser beam irradiation means for irradiating, and processing feed means for relatively processing and feeding the chuck table and the laser beam irradiation means,
The laser beam irradiation unit includes a laser beam oscillation unit, an optical transmission unit that transmits a laser beam oscillated by the laser beam oscillation unit, and a condensing lens that collects the laser beam transmitted by the optical transmission unit. In processing equipment,
The optical transmission means comprises a birefringent lens that separates the laser beam oscillated by the laser beam oscillation means into ordinary light and extraordinary light,
The condensing lens condenses the ordinary light and the extraordinary light separated by the birefringent lens, respectively, and forms a condensing point for ordinary light and a condensing point for extraordinary light.
A laser processing apparatus is provided.

上記光学伝送手段は、上記レーザー光線発振手段と上記複屈折レンズとの間に配設された波長板を備えている。
上記複屈折レンズは、所定の曲率を有する凸面を備えたガラス体と、該ガラス体の該凸面と対応する曲率を有する凹面を備えた結晶体とからなり、ガラス体の凸面と結晶体の凹面が結合して構成されている。
上記複屈折レンズと上記集光レンズとの間には、集光レンズに入射するレーザー光線の光軸を加工送り方向に変位せしめる複屈折偏向板が配設されていることが望ましい。複屈折偏向板は、所定の傾斜角度を有する傾斜面を備えた結晶体と、該結晶体の該傾斜面と対応する傾斜面を備えたガラス体とからなり、結晶体の傾斜面とガラス体の傾斜面が結合して構成されている。
また、上記レーザー光線発振手段と上記複屈折レンズとの間には、上記集光レンズによるレーザー光線の集光点深さ位置を変位せしめる集光点深さ変位手段が配設されていることが望ましい。 The optical transmission means includes a wave plate disposed between the laser beam oscillation means and the birefringent lens.
The birefringent lens includes a glass body having a convex surface having a predetermined curvature and a crystal body having a concave surface having a curvature corresponding to the convex surface of the glass body, and the convex surface of the glass body and the concave surface of the crystal body Are combined.
It is desirable that a birefringence deflecting plate that displaces the optical axis of the laser beam incident on the condensing lens in the processing feed direction is disposed between the birefringent lens and the condensing lens. The birefringent deflection plate includes a crystal body having an inclined surface having a predetermined inclination angle and a glass body having an inclined surface corresponding to the inclined surface of the crystal body, and the inclined surface of the crystal body and the glass body The inclined surfaces are combined.
Further, it is desirable that a condensing point depth displacing unit for displacing a condensing point depth position of the laser beam by the condensing lens is disposed between the laser beam oscillating unit and the birefringent lens.

本発明のレーザー加工装置においては、レーザー光線発振手段から発振されたレーザー光線を複屈折レンズによって常光と異常光に分離し、この分離された常光と異常光を集光レンズによってそれぞれ集光せしめ、常光の集光点と異常光の集光点とを形成するので、２層の変質層を同時に形成することができる。このように本発明のレーザー加工装置は、複屈折レンズを配設した簡単な構成により、被加工物の厚さ方向に２層の変質層を同時に形成することができる。   In the laser processing apparatus of the present invention, the laser beam oscillated from the laser beam oscillation means is separated into ordinary light and extraordinary light by the birefringence lens, and the separated ordinary light and extraordinary light are respectively condensed by the condenser lens, Since the condensing point and the condensing point of abnormal light are formed, two altered layers can be formed simultaneously. As described above, the laser processing apparatus of the present invention can simultaneously form two altered layers in the thickness direction of the workpiece with a simple configuration in which the birefringent lens is disposed.

以下、本発明に従って構成されたレーザー加工装置の好適な実施形態について、添付図面を参照して詳細に説明する。   DESCRIPTION OF EMBODIMENTS Hereinafter, a preferred embodiment of a laser processing apparatus configured according to the present invention will be described in detail with reference to the accompanying drawings.

図１には、本発明に従って構成されたレーザー加工装置の実施形態の概略構成図が示されている。図１に示すレーザー加工装置は、被加工物であるウエーハ２を保持するためのチャックテーブル３と全体を番号４で示すレーザー光線照射手段とを具備している。   FIG. 1 is a schematic configuration diagram of an embodiment of a laser processing apparatus configured according to the present invention. The laser processing apparatus shown in FIG. 1 includes a chuck table 3 for holding a wafer 2 as a workpiece, and a laser beam irradiation means generally indicated by numeral 4.

チャックテーブル３は、例えば多孔質部材から形成され或いは複数個の吸引孔又は溝が形成された吸着チャック３１を具備しており、該吸着チャック３１が図示しない吸引手段に連通されている。従って、吸着チャック３１上に被加工物であるウエーハ２の回路面側に貼着された保護テープ２１側を載置し、図示しない吸引手段を作動することにより、ウエーハ２はチャックテーブル３上に吸引保持される。このように構成されたチャックテーブル３は、図示しない加工送り手段によって図１において矢印Ｘで示す加工送り方向に移動せしめられるように構成されている。従って、チャックテーブル３とレーザー光線照射手段４は、矢印Ｘで示す加工送り方向に相対的に移動可能である。   The chuck table 3 includes, for example, a suction chuck 31 formed of a porous member or formed with a plurality of suction holes or grooves, and the suction chuck 31 communicates with suction means (not shown). Accordingly, the wafer 2 is placed on the chuck table 3 by placing the protective tape 21 attached to the circuit surface side of the wafer 2 as a workpiece on the suction chuck 31 and operating a suction means (not shown). Suction hold. The chuck table 3 configured as described above is configured to be moved in a processing feed direction indicated by an arrow X in FIG. Accordingly, the chuck table 3 and the laser beam irradiation means 4 are relatively movable in the processing feed direction indicated by the arrow X.

レーザー光線照射手段４は、パルスレーザー光線発振手段５と、このパルスレーザー光線発振手段５が発振するパルスレーザーを伝送する光学伝送手段７と、該光学伝送手段７によって伝送されたレーザー光線を集光せしめる集光レンズ８を具備している。パルスレーザー光線発振手段５は、被加工物であるウエーハ２に対して透過性を有する直線偏光のパルスレーザー光線１０を発振する。このパルスレーザー光線発振手段５は、ウエーハ２がシリコン基板、炭化珪素基板、リチウムタンタレート基板、ガラス基板或いは石英基板を含むウエーハである場合、例えば波長が１０６４ｎｍであるパルスレーザー光線１０を発振するＹＶＯ４パルスレーザー発振器或いはＹＡＧパルスレーザー発振器を用いることができる。   The laser beam irradiation unit 4 includes a pulse laser beam oscillation unit 5, an optical transmission unit 7 that transmits a pulse laser generated by the pulse laser beam oscillation unit 5, and a condensing lens that collects the laser beam transmitted by the optical transmission unit 7. 8 is provided. The pulse laser beam oscillating means 5 oscillates a linearly polarized pulse laser beam 10 having transparency to the wafer 2 as a workpiece. This pulse laser beam oscillation means 5 is a YVO4 pulse laser that oscillates a pulse laser beam 10 having a wavelength of 1064 nm, for example, when the wafer 2 is a wafer including a silicon substrate, a silicon carbide substrate, a lithium tantalate substrate, a glass substrate, or a quartz substrate. An oscillator or a YAG pulse laser oscillator can be used.

光学伝送手段７は、パルスレーザー光線発振手段５から発振されたパルスレーザー光線１０を図１において下方に向けて９０度変換する方向変換ミラー７１と、該方向変換ミラー７１によって方向変換されたパルスレーザー光線１０を常光と異常光に分離する複屈折レンズ７２とを具備している。複屈折レンズ７２は、図示の実施形態においてはLASF35ガラス体７２１と、YVO4結晶体７２２とによって構成されている。LASF35ガラス体７２１は所定の曲率（例えば曲率半径が５８mm）を有する凸面７２１aを備え、YVO4結晶体７２２はガラス体７２１の凸面７２１aと対応する曲率を有する凹面７２２aを備えており、ガラス体７２１の凸面７２１aと結晶体７２２の凹面７２２aが結合して構成されている。このように構成された複屈折レンズ７２は、方向変換ミラー７１によって方向変換されたパルスレーザー光線１０がYVO4結晶体７２２の光学軸に対して所定の角度をもって入射されると、パルスレーザー光線１０を図において実線で示す常光１０aと破線で示す異常光１０bに分離する。即ち、複屈折レンズ７２は、常光１０aについては屈折させずにそのまま通過させ、異常光１０bについては凹面７２２aを備えた結晶体７２２によって外側に屈折させる。なお、パルスレーザー光線１０をYVO4結晶体７２２の光学軸に対して所定の角度をもって入射させるようにするには、複屈折レンズ７２を入射するパルスレーザー光線１０の光軸を中心として回動して調整してもよく、また、パルスレーザー光線発振手段５を発振するパルスレーザー光線の光軸を中心として回動して調整してもよい。   The optical transmission unit 7 converts the pulse laser beam 10 oscillated from the pulse laser beam oscillation unit 5 by 90 degrees downward in FIG. 1 and the pulse laser beam 10 direction-converted by the direction conversion mirror 71. A birefringent lens 72 that separates ordinary light and extraordinary light is provided. In the illustrated embodiment, the birefringent lens 72 is composed of a LASF35 glass body 721 and a YVO4 crystal body 722. The LASF35 glass body 721 has a convex surface 721a having a predetermined curvature (for example, a radius of curvature of 58 mm), and the YVO4 crystal body 722 has a concave surface 722a having a curvature corresponding to the convex surface 721a of the glass body 721. The convex surface 721a and the concave surface 722a of the crystal 722 are combined. The birefringent lens 72 configured in this manner allows the pulse laser beam 10 to be incident on the optical axis of the YVO4 crystal 722 at a predetermined angle when the pulse laser beam 10 whose direction has been changed by the direction changing mirror 71 is incident on the figure. The light is separated into ordinary light 10a indicated by a solid line and abnormal light 10b indicated by a broken line. That is, the birefringent lens 72 allows the ordinary light 10a to pass through without being refracted, and causes the extraordinary light 10b to be refracted outward by the crystal body 722 having the concave surface 722a. In order to make the pulse laser beam 10 incident at a predetermined angle with respect to the optical axis of the YVO4 crystal 722, the birefringent lens 72 is rotated and adjusted around the optical axis of the incident pulse laser beam 10. Alternatively, it may be adjusted by rotating around the optical axis of the pulse laser beam oscillated by the pulse laser beam oscillation means 5.

次に、パルスレーザー光線１０をYVO4結晶体７２２の光学軸に対して所定の角度をもって入射させる他の実施形態について、図２を参照して説明する。
図２に示す実施形態は、図１に示す実施形態における方向変換ミラー７１と複屈折レンズ７２との間に二分の一波長板７５を配設したものである。この二分の一波長板７５は、偏光面を回動することによりパルスレーザー光線１０のYVO4結晶体７２２の光学軸に対する入射角を変えることができる。このパルスレーザー光線１０のYVO4結晶体７２２の光学軸に対する入射角を４５度にすることにより、複屈折レンズ７２によって分離される常光１０aと異常光１０bとの比率をそれぞれ５０％にすることができる。 Next, another embodiment in which the pulse laser beam 10 is incident at a predetermined angle with respect to the optical axis of the YVO4 crystal 722 will be described with reference to FIG.
In the embodiment shown in FIG. 2, a half-wave plate 75 is disposed between the direction changing mirror 71 and the birefringent lens 72 in the embodiment shown in FIG. The half-wave plate 75 can change the incident angle of the pulse laser beam 10 with respect to the optical axis of the YVO4 crystal 722 by rotating the polarization plane. By setting the incident angle of the pulse laser beam 10 to the optical axis of the YVO4 crystal 722 to 45 degrees, the ratio of the ordinary light 10a and the extraordinary light 10b separated by the birefringent lens 72 can be set to 50%.

上記集光レンズ８は、複屈折レンズ７２によって分離された常光１０aと異常光１０bをそれぞれ集光せしめる。即ち、集光レンズ８は、常光１０aについては被加工物であるウエーハ２の内部における集光点Pａに集光せしめ、異常光１０bについては被加工物であるウエーハ２の内部における集光点Pbに集光せしめる。この集光点Pbは、異常光１０bが上述したように複屈折レンズ７２によって外側に屈折せしめられているので、常光１０aの集光点Pａより深い位置（図１および図２において下方位置）、即ち集光レンズ８から光軸方向に離れた位置となる。
なお、図１および図２に示す実施形態における複屈折レンズ７２はガラス体７２１が凸面７２１aを備え結晶体７２２が凹面７２２aを備えた例を示したが、ガラス体に凹面を備え結晶体に凸面を備えた構成にしてもよい。このこのように構成した場合には、異常光の集光点が常光の集光点より浅い位置（図１および図２において上方位置）、即ち光軸方向に集光レンズ８に近い位置となる。 The condensing lens 8 condenses the ordinary light 10a and the extraordinary light 10b separated by the birefringent lens 72, respectively. That is, the condensing lens 8 condenses the normal light 10a at the condensing point Pa inside the wafer 2 that is the workpiece, and the abnormal light 10b condenses the condensing point Pb inside the wafer 2 that is the workpiece. Concentrate on Since the extraordinary light 10b is refracted outward by the birefringent lens 72 as described above, the condensing point Pb is deeper than the condensing point Pa of the ordinary light 10a (downward position in FIGS. 1 and 2). That is, it is at a position away from the condenser lens 8 in the optical axis direction.
The birefringent lens 72 in the embodiment shown in FIGS. 1 and 2 shows an example in which the glass body 721 has a convex surface 721a and the crystal body 722 has a concave surface 722a, but the glass body has a concave surface and the crystal body has a convex surface. You may make it the structure provided with. In such a configuration, the condensing point of abnormal light is shallower than the condensing point of ordinary light (upward position in FIGS. 1 and 2), that is, a position close to the condensing lens 8 in the optical axis direction. .

上述したようにパルスレーザー光線１０の常光１０aが集光点Pａに集光せしめられると、これに起因して集光点Pａの近傍、通常は集光点Pａから上方に向かって厚さＴ１を有する領域で被加工物であるウエーハ２に変質層W１が形成される。また、パルスレーザー光―線１０の異常光１０bが集光点Pbに集光せしめられると、集光点Pb近傍、通常は集光点Pbから上方に向かって厚さＴ２を有する領域で被加工物であるウエーハ２に変質層W２が生成される。被加工物であるウエーハ２に形成される変質層はウエーハ２の材質或いは集光せしめられるパルスレーザー光線１０の常光１０aと異常光１０bの強度にも依存するが、通常は溶融再固化（即ち、パルスレーザー光線１０の常光１０aと異常光１０bが集光されている時に溶融されパルスレーザー光線１０の集光が終了した後に固化される）、ボイド或いはクラックである。   As described above, when the ordinary light 10a of the pulse laser beam 10 is condensed at the condensing point Pa, it has a thickness T1 in the vicinity of the condensing point Pa, usually upward from the condensing point Pa. The altered layer W1 is formed on the wafer 2 which is a workpiece in the region. Further, when the abnormal light 10b of the pulse laser beam-line 10 is condensed at the condensing point Pb, the workpiece is processed in the vicinity of the condensing point Pb, usually in the region having the thickness T2 upward from the condensing point Pb. The altered layer W2 is generated on the wafer 2 which is a product. The deteriorated layer formed on the wafer 2 as a workpiece is usually melted and re-solidified (that is, the pulse is solidified depending on the material of the wafer 2 or the intensity of the ordinary light 10a and the extraordinary light 10b of the pulsed laser beam 10 to be condensed). These are voids or cracks, which are melted when the ordinary light 10a and abnormal light 10b of the laser beam 10 are condensed and solidified after the condensing of the pulsed laser beam 10 is completed).

図示の実施形態におけるレーザー加工装置は、上述したようにパルスレーザー光線を照射しつつチャックテーブル３（従って、チャックテーブル３に保持された被加工物であるウエーハ２）を、図１および図２において例えば左方に移動せしめる。この結果、ウエーハ２の内部には、図３に示すように所定の分割予定ラインに沿って厚さＴ１およびＴ２を有する２個の変質層Ｗ１およびＷ２が同時に形成される。このように、図示の実施形態におけるレーザー加工装置によれば、複屈折レンズ７２を配設した簡単な構成により、被加工物であるウエーハ２にその厚さ方向に変位せしめられた２個の領域に厚さＴ１およびＴ２を有する変質層Ｗ１およびＷ２を同時に形成することができる。   The laser processing apparatus in the illustrated embodiment is configured so that the chuck table 3 (and therefore the wafer 2 that is a workpiece held by the chuck table 3) is irradiated with the pulse laser beam as described above, as shown in FIGS. Move to the left. As a result, two altered layers W1 and W2 having thicknesses T1 and T2 are simultaneously formed in the wafer 2 along predetermined predetermined division lines as shown in FIG. As described above, according to the laser processing apparatus in the illustrated embodiment, the two regions displaced in the thickness direction of the wafer 2 as the workpiece by the simple configuration in which the birefringent lens 72 is disposed. The altered layers W1 and W2 having the thicknesses T1 and T2 can be formed simultaneously.

なお、上記レーザー加工における加工条件は、例えば次のように設定されている。
光源 ：LD励起QスイッチNd：YAGパルスレーザー
波長 ：１０６４ｎｍ
パルス出力 ：２．５μJ
集光スポット径 ：φ１μｍ
パルス幅 ：４０ns
繰り返し周波数 ：１００ｋHｚ
加工送り速度 ：１００ｍｍ／秒 The processing conditions in the laser processing are set as follows, for example.
Light source: LD excitation Q switch Nd: YAG pulse laser Wavelength: 1064nm
Pulse output: 2.5μJ
Condensing spot diameter: φ1μm
Pulse width: 40 ns
Repetition frequency: 100 kHz
Processing feed rate: 100 mm / sec

なお、被加工物であるウエーハ２の厚さが厚く、厚さＴ１およびＴ２を有する変質層Ｗ１およびＷ２では分割ラインに沿ってウエーハ２を精密に分割するには不充分である場合には、レーザー光線照射手段４とチャックテーブル３とを光軸方向、即ち図１および図２において矢印Zで示す上下方向に相対的に所定距離移動せしめ、これによって集光点Pａおよび集光点Pbを光軸方向、従って被加工物であるウエーハ２の厚さ方向に変位せしめ、レーザー光線照射手段４からパルスレーザー光線を照射しつつチャックテーブル３を図１および図２において矢印Ｘで示す加工送り方向に移動せしめる。この結果、被加工物であるウエーハ２には、上記変質層Ｗ１およびＷ２に加えて厚さ方向に変位した部位に厚さＴ１およびＴ２を有する変質層Ｗ１およびＷ２形成することができる。   In addition, when the thickness of the wafer 2 which is a workpiece is thick and the deteriorated layers W1 and W2 having the thicknesses T1 and T2 are insufficient to accurately divide the wafer 2 along the dividing line, The laser beam irradiating means 4 and the chuck table 3 are moved by a predetermined distance in the optical axis direction, that is, the vertical direction indicated by the arrow Z in FIGS. 1 and 2, whereby the condensing point Pa and the condensing point Pb are moved to the optical axis. The chuck table 3 is moved in the processing feed direction indicated by the arrow X in FIGS. 1 and 2 while irradiating the laser beam irradiation means 4 with the pulse laser beam while displacing the wafer table 2 in the direction, and thus the thickness direction of the wafer 2 as the workpiece. As a result, on the wafer 2 that is a workpiece, in addition to the above-described deteriorated layers W1 and W2, the deteriorated layers W1 and W2 having the thicknesses T1 and T2 can be formed at the portions displaced in the thickness direction.

次に、レーザー光線照射手段４における光学伝送手段７の他の実施形態について、図４を参照して説明する。
図４に示す光学伝送手段７は、上記図１に示す実施形態における複屈折レンズ７２と集光レンズ８との間に集光レンズ８に入射するレーザー光線１０の常光１０aと異常光１０bの光軸を加工送り方向Xに変位せしめる複屈折偏向板７３を配設したものである。なお、図４に示す実施形態においては、複屈折偏向板７３以外は上記図１に示すレーザー光線照射手段４の各構成要素を同一の構成であるため、同一部材には同一符号を付してその説明は省略する。
複屈折偏向板７３は、図示の実施形態においてはYVO4結晶体７３１とLASF35ガラス体７３２とからなっている。YVO4結晶体は所定の傾斜角度（例えば３．５度）を有する面７３１aを備え、LASF35ガラス体７３２はYVO4結晶体７３１の傾斜面７３１aと対応する傾斜面７３２aを備えており、YVO4結晶体７３１の傾斜面７３１aとLASF35ガラス体７３２傾斜面７３２aが結合して構成されている。このように構成された複屈折偏向板７３は、複屈折レンズ７２によって分離されたパルスレーザー光線１０の常光１０aについては屈折させずにそのまま通過させ、異常光１０bについては図４においてに左方に屈折させる。この結果、集光レンズ８は、常光１０aについては被加工物であるウエーハ２の内部における集光点Pａに集光せしめ、異常光１０bについては常光１０aの集光点Pａに対して図４において矢印Ｘで示す加工送り方向に距離Sだけ左方に変位して被加工物であるウエーハ２の内部における集光点Pbに集光せしめる。この集光点Pbは、異常光１０bが上述したように複屈折レンズ７２によって外側に屈折せしめられているので、常光１０aの集光点Pａより深い位置（図４において下方位置）、即ち集光レンズ８から光軸方向に離れた位置となる。 Next, another embodiment of the optical transmission means 7 in the laser beam irradiation means 4 will be described with reference to FIG.
The optical transmission means 7 shown in FIG. 4 is an optical axis of the ordinary light 10a and the extraordinary light 10b of the laser beam 10 incident on the condenser lens 8 between the birefringent lens 72 and the condenser lens 8 in the embodiment shown in FIG. Is provided with a birefringence deflecting plate 73 for displacing the plate in the processing feed direction X. In the embodiment shown in FIG. 4, since the components of the laser beam irradiation means 4 shown in FIG. 1 are the same except for the birefringence deflecting plate 73, the same members are denoted by the same reference numerals. Description is omitted.
In the illustrated embodiment, the birefringent deflection plate 73 is composed of a YVO4 crystal body 731 and a LASF35 glass body 732. The YVO4 crystal body has a surface 731a having a predetermined inclination angle (for example, 3.5 degrees), and the LASF35 glass body 732 has an inclined surface 732a corresponding to the inclined surface 731a of the YVO4 crystal body 731, and the YVO4 crystal body 731 The inclined surface 731a and the LASF35 glass body 732 inclined surface 732a are combined. The birefringent deflecting plate 73 configured in this way allows the ordinary light 10a of the pulse laser beam 10 separated by the birefringent lens 72 to pass through without being refracted, and the extraordinary light 10b is refracted to the left in FIG. Let As a result, the condensing lens 8 condenses the ordinary light 10a at the condensing point Pa inside the wafer 2, which is the workpiece, and the abnormal light 10b in FIG. 4 with respect to the condensing point Pa of the ordinary light 10a. It is displaced to the left by a distance S in the processing feed direction indicated by the arrow X, and is condensed at a condensing point Pb inside the wafer 2 that is a workpiece. Since the extraordinary light 10b is refracted outward by the birefringent lens 72 as described above, the condensing point Pb is deeper than the condensing point Pa of the ordinary light 10a (a lower position in FIG. 4), that is, the condensing point. The position is away from the lens 8 in the optical axis direction.

上述したようにパルスレーザー光線１０の常光１０aが集光点Pａに集光せしめられると、これに起因して集光点Pａの近傍、通常は集光点Pａから上方に向かって厚さＴ１を有する領域で被加工物であるウエーハ２に変質層W１が形成される。また、パルスレーザー光線１０の異常光１０bが集光点Pbに集光せしめられると、集光点Pb近傍、通常は集光点Pbから上方に向かって厚さＴ２を有する領域で被加工物であるウエーハ２に変質層W２が生成される。このとき、異常光１０bの集光点Pbは常光１０aの集光点Pａに対して図４において矢印Ｘで示す加工送り方向に距離Sだけ変位しているので、常光１０aの集光点Pａと異常光１０bの集光点Pbが干渉することはなく、集光点が浅い常光１０aによって集光点が深い異常光１０ｂが阻害されることはない。従って、常光１０aの集光点Pａ近傍および異常光１０bの集光点Pb近傍にそれぞれ所望の深さの変質層W１およびW２を形成することができる。   As described above, when the ordinary light 10a of the pulse laser beam 10 is condensed at the condensing point Pa, it has a thickness T1 in the vicinity of the condensing point Pa, usually upward from the condensing point Pa. The altered layer W1 is formed on the wafer 2 which is a workpiece in the region. Further, when the abnormal light 10b of the pulse laser beam 10 is condensed at the condensing point Pb, it is a workpiece in the vicinity of the condensing point Pb, usually in the region having the thickness T2 upward from the condensing point Pb. The altered layer W2 is generated in the wafer 2. At this time, the condensing point Pb of the extraordinary light 10b is displaced by a distance S in the processing feed direction indicated by an arrow X in FIG. 4 with respect to the condensing point Pa of the ordinary light 10a. The condensing point Pb of the extraordinary light 10b does not interfere, and the extraordinary light 10b having a deep condensing point is not inhibited by the ordinary light 10a having a shallow condensing point. Accordingly, the altered layers W1 and W2 having desired depths can be formed in the vicinity of the condensing point Pa of the ordinary light 10a and in the vicinity of the condensing point Pb of the abnormal light 10b, respectively.

次に、レーザー光線照射手段４における光学伝送手段７の更に他の実施形態について、図５を参照して説明する。
図５に示す光学伝送手段７は、上記パルスレーザー光線発振手段５と方向変換ミラー７１との間に集光点深さ変位手段７４を配設したものである。なお、図５に示す実施形態においては、集光点深さ変位手段７４以外は上記図４に示すレーザー光線照射手段４の各構成要素を同一の構成であるため、同一部材には同一符号を付してその説明は省略する。
図５に示す集光点深さ変位手段７４は、間隔を置いて配設された第１の凸レンズ７４１および第２の凸レンズ７４２と、該第１の凸レンズ７４１と第２の凸レンズ７４２との間に配設された第１のミラー対７４３および第２のミラー対７４４とからなっている。第１のミラー対７４３は互いに平行に配設された第１のミラー７４３aと第２のミラー７４３bとからなり、該第１のミラー７４３aと第２のミラー７４３bは互いの間隔を維持した状態で図示しないミラー保持部材に固定されている。第２のミラー対７４４も互いに平行に配設された第１のミラー７４４aと第２のミラー７４４bとからなっており、該第１のミラー７４４aと第２のミラー７４４bは互いの間隔を維持した状態で図示しないミラー保持部材に固定されている。そして、図５に示す状態においては第１の凸レンズ７４１の焦点(f1)と第２の凸レンズ７４２の焦点(f2)が、第１のミラー対７４３の第２のミラー７４３bと第２のミラー対７４４の第１のミラー７４４aの間の集束点Dで一致するように構成されている。この状態においては、第２の凸レンズ７４２から方向変換ミラー７１に向けて照射されるパルスレーザー光線１０は平行となる。 Next, still another embodiment of the optical transmission means 7 in the laser beam irradiation means 4 will be described with reference to FIG.
The optical transmission means 7 shown in FIG. 5 has a condensing point depth displacement means 74 disposed between the pulse laser beam oscillation means 5 and the direction changing mirror 71. In the embodiment shown in FIG. 5, the constituent elements of the laser beam irradiation means 4 shown in FIG. 4 are the same except for the condensing point depth displacement means 74. The description is omitted.
The condensing point depth displacing means 74 shown in FIG. 5 includes a first convex lens 741 and a second convex lens 742 that are arranged at an interval, and between the first convex lens 741 and the second convex lens 742. The first mirror pair 743 and the second mirror pair 744 are arranged in the above. The first mirror pair 743 includes a first mirror 743a and a second mirror 743b that are arranged in parallel to each other, and the first mirror 743a and the second mirror 743b are maintained in a state where the distance between them is maintained. It is fixed to a mirror holding member (not shown). The second mirror pair 744 also includes a first mirror 744a and a second mirror 744b that are arranged in parallel to each other, and the first mirror 744a and the second mirror 744b maintain a distance from each other. In the state, it is fixed to a mirror holding member (not shown). In the state shown in FIG. 5, the focal point (f1) of the first convex lens 741 and the focal point (f2) of the second convex lens 742 are the second mirror 743b of the first mirror pair 743 and the second mirror pair. 744 is configured to coincide at a converging point D between the first mirrors 744a. In this state, the pulse laser beam 10 irradiated from the second convex lens 742 toward the direction conversion mirror 71 is parallel.

このように構成された図５に示す集光点深さ変位手段７４においては、パルスレーザー光線発振手段５から発振されたパルスレーザー光線１０を、第１の凸レンズ７４１、第１のミラー対７４３の第１のミラー７４３aおよび第２のミラー７４３b、第２のミラー対７４４の第１のミラー７４４aおよび第２のミラー７４４b、第２の凸レンズ７４２を介して方向変換ミラー７１に導く。そして、図５に示す集光点深さ変位手段７４は、第１のミラー対７４３および第２のミラー対７４４をそれぞれ保持する図示しないミラー保持部材を、それぞれ第１のミラー７４３aと第２のミラー７４３bおよび第１のミラー７４４aと第２のミラー７４４bが点対称の位置となる点Q、Qを中心として回動し、各ミラーの設置角度を変更することにより第１の凸レンズ７４１の焦点(f1)および第２の凸レンズ７４２の焦点(f2)をそれぞれ図５において左右方向に変位することができる。このように構成された集光点深さ変位手段７４は、図５に示す状態においては上述したように第１の凸レンズ７４１の焦点(f1)と第２の凸レンズ７４２の焦点(f2)が集束点Dで一致し、第２の凸レンズ７４２から方向変換ミラー７１に向けて照射されるパルスレーザー光線１０を平行にする。一方、第１のミラー対７４３および第２のミラー対７４４を点Q、Qを中心として一方に回動し、第１の凸レンズ７４１の焦点(f1)を上記集束点Dより図５において左方に変位し、第２の凸レンズ７４２の焦点(f2)を上記集束点Dより図５において右方に変位すると、第２の凸レンズ７４２から方向変換ミラー７１に向けて照射されるパルスレーザー光線１０は末広がりとなる。この結果、方向変換ミラー７１を介して上記複屈折レンズ７２に入射するパルスレーザー光線１０も末広がりとなるため、複屈折レンズ７２によって分離され集光レンズ７３によって集光される常光１０aの集光点Pａと異常光１０bの集光点Pbは図示の状態より下方に変位する。他方、第１のミラー対７４３および第２のミラー対７４４を点Q、Qを中心として他方に回動し、第１の凸レンズ７４１の焦点(f1)を上記集束点Dより図５において右方に変位し、第２の凸レンズ７４２の焦点(f2)を上記集束点Dより図５において左方に変位すると、第２の凸レンズ７４２から方向変換ミラー７１に向けて照射されるパルスレーザー光線１０は末細りとなる。この結果、方向変換ミラー７１を介して上記複屈折レンズ７２に入射するパルスレーザー光線１０も末細りとなるため、複屈折レンズ７２によって分離され集光レンズ７３によって集光される常光１０aの集光点Pａと異常光１０bの集光点Pbは図示の状態より上方に変位する。   In the condensing point depth displacement unit 74 shown in FIG. 5 configured as described above, the pulse laser beam 10 oscillated from the pulse laser beam oscillation unit 5 is converted into the first convex lens 741 and the first mirror pair 743 first. The second mirror 743a and the second mirror 743b, the first mirror 744a and the second mirror 744b of the second mirror pair 744, and the second convex lens 742 are guided to the direction conversion mirror 71. The condensing point depth displacing means 74 shown in FIG. 5 includes a mirror holding member (not shown) that holds the first mirror pair 743 and the second mirror pair 744, respectively, as the first mirror 743a and the second mirror 743a. The mirror 743b, the first mirror 744a, and the second mirror 744b rotate around the points Q and Q where the positions are point-symmetric, and the focal point of the first convex lens 741 is changed by changing the installation angle of each mirror ( The focal point (f2) of f1) and the second convex lens 742 can be displaced in the left-right direction in FIG. In the state shown in FIG. 5, the condensing point depth displacing means 74 configured in this way converges the focal point (f1) of the first convex lens 741 and the focal point (f2) of the second convex lens 742 as described above. The pulse laser beam 10 that coincides at the point D and is irradiated from the second convex lens 742 toward the direction conversion mirror 71 is made parallel. On the other hand, the first mirror pair 743 and the second mirror pair 744 are rotated to one about the points Q and Q, and the focal point (f1) of the first convex lens 741 is moved to the left in FIG. When the focal point (f2) of the second convex lens 742 is displaced to the right in FIG. 5 from the focusing point D, the pulse laser beam 10 irradiated from the second convex lens 742 toward the direction changing mirror 71 is divergent. It becomes. As a result, the pulsed laser beam 10 incident on the birefringent lens 72 via the direction changing mirror 71 also spreads out, so that the condensing point Pa of the ordinary light 10a separated by the birefringent lens 72 and condensed by the condensing lens 73 is obtained. And the condensing point Pb of the abnormal light 10b is displaced downward from the illustrated state. On the other hand, the first mirror pair 743 and the second mirror pair 744 are rotated to the other about the points Q and Q, and the focal point (f1) of the first convex lens 741 is moved to the right in FIG. When the focal point (f2) of the second convex lens 742 is displaced to the left in FIG. 5 from the converging point D, the pulse laser beam 10 irradiated from the second convex lens 742 toward the direction change mirror 71 ends. It becomes thin. As a result, the pulsed laser beam 10 incident on the birefringent lens 72 via the direction changing mirror 71 is also diminished, so that the condensing point of the ordinary light 10a separated by the birefringent lens 72 and condensed by the condensing lens 73 is obtained. The condensing point Pb of Pa and abnormal light 10b is displaced upward from the illustrated state.

なお、光学伝送手段７は、曲率半径または結晶体の異なる複数の複屈折レンズおよび傾斜角または結晶体の異なる複数の複屈折偏向板を準備して適宜交換するように構成することにより、Z方向およびX方向に２つの集光点の距離を適宜変更することができる。   The optical transmission means 7 is configured to prepare and replace a plurality of birefringent lenses having different radii of curvature or crystals and a plurality of birefringent deflecting plates having different inclination angles or crystals, so that the Z direction And the distance of two condensing points can be suitably changed in the X direction.

本発明に従って構成されたレーザー加工装置の概略構成図。The schematic block diagram of the laser processing apparatus comprised according to this invention. 図１のレーザー加工装置に装備されるレーザー光線照射手段の他の実施形態を示す概略構成図。The schematic block diagram which shows other embodiment of the laser beam irradiation means with which the laser processing apparatus of FIG. 1 is equipped. 図１のレーザー加工装置によって被加工物の内部に２個の変質層を同時に形成した状態を示す説明図。Explanatory drawing which shows the state which formed two deteriorated layers in the inside of a workpiece simultaneously with the laser processing apparatus of FIG. 図１のレーザー加工装置に装備されるレーザー光線照射手段を構成する光学伝送手段の他の実施形態を示す概略構成図。The schematic block diagram which shows other embodiment of the optical transmission means which comprises the laser beam irradiation means with which the laser processing apparatus of FIG. 1 is equipped. 図１のレーザー加工装置に装備されるレーザー光線照射手段を構成する光学伝送手段の更に他の実施形態を示す概略構成図。The schematic block diagram which shows other embodiment of the optical transmission means which comprises the laser beam irradiation means with which the laser processing apparatus of FIG. 1 is equipped.

符号の説明Explanation of symbols

２：ウエーハ（被加工物）
３：チャックテーブル
４：レーザー光線照射手段
５：パルスレーザー光線発振手段
７：光学伝送手段
７１： 方向変換ミラー
７２：複屈折レンズ
７２１：LASF35ガラス体
７２２：YOV4結晶体
７３：複屈折偏向板
７３１：YOV4結晶体
７３２：LASF35ガラス体
７４：集光点深さ変位手段
７４１：第１の凸レンズ
７４２：第２の凸レンズ
７４３：第１のミラー対
７４４：第２のミラー対
７５：二分の一波長板
８：集光レンズ 2: Wafer (workpiece)
3: Chuck table 4: Laser beam irradiation means 5: Pulse laser beam oscillation means 7: Optical transmission means 71: Direction conversion mirror 72: Birefringence lens 721: LASF35 glass body 722: YOV4 crystal body 73: Birefringence deflecting plate 731: YOV4 crystal Body 732: LASF35 glass body 74: focusing point depth displacement means 741: first convex lens 742: second convex lens 743: first mirror pair 744: second mirror pair 75: half-wave plate 8: Condenser lens

Claims (6)

被加工物を保持するチャックテーブルと、該チャックテーブルに保持された被加工物に該被加工物に対して透過性を有するレーザー光線を照射するレーザー光線照射手段と、該チャックテーブルと該レーザー光線照射手段とを相対的に加工送りする加工送り手段とを具備し、
該レーザー光線照射手段は、レーザー光線発振手段と、該レーザー光線発振手段が発振するレーザー光線を伝送する光学伝送手段と、該光学伝送手段によって伝送されたレーザー光線を集光せしめる集光レンズとを含んでいる、レーザー加工装置において、
該光学伝送手段は、該レーザー光線発振手段が発振するレーザー光線を常光と異常光に分離する複屈折レンズを備え、
該集光レンズは、該複屈折レンズによって分離された常光と異常光をそれぞれ集光せしめ、常光の集光点と異常光の集光点とを形成する、
ことを特徴とするレーザー加工装置。 A chuck table for holding a workpiece, a laser beam irradiation means for irradiating a workpiece held on the chuck table with a laser beam having transparency to the workpiece, the chuck table, and the laser beam irradiation means, A machining feed means for relatively machining and feeding
The laser beam irradiation unit includes a laser beam oscillation unit, an optical transmission unit that transmits a laser beam oscillated by the laser beam oscillation unit, and a condensing lens that collects the laser beam transmitted by the optical transmission unit. In processing equipment,
The optical transmission means comprises a birefringent lens that separates the laser beam oscillated by the laser beam oscillation means into ordinary light and extraordinary light,
The condensing lens condenses the ordinary light and the extraordinary light separated by the birefringent lens, respectively, and forms a condensing point for ordinary light and a condensing point for extraordinary light.
Laser processing equipment characterized by that. 該光学伝送手段は、該レーザー光線発振手段と該複屈折レンズとの間に配設された波長板を備えている、請求項１記載のレーザー加工装置。   The laser processing apparatus according to claim 1, wherein the optical transmission unit includes a wave plate disposed between the laser beam oscillation unit and the birefringent lens. 該複屈折レンズは、所定の曲率を有する凸面を備えたガラス体と、該ガラス体の該凸面と対応する曲率を有する凹面を備えた結晶体とからなり、該ガラス体の該凸面と該結晶体の該凹面が結合して構成されている、請求項１又は２記載のレーザー加工装置。   The birefringent lens includes a glass body having a convex surface having a predetermined curvature and a crystal body having a concave surface having a curvature corresponding to the convex surface of the glass body, and the convex surface of the glass body and the crystal The laser processing apparatus according to claim 1, wherein the concave surfaces of the body are coupled to each other. 該複屈折レンズと該集光レンズとの間には、該集光レンズに入射するレーザー光線の光軸を加工送り方向に変位せしめる複屈折偏向板が配設されている、請求項１から３のいずれかに記載のレーザー加工装置。   The birefringence deflecting plate for displacing the optical axis of the laser beam incident on the condensing lens in the processing feed direction is disposed between the birefringent lens and the condensing lens. The laser processing apparatus in any one. 該複屈折偏向板は、所定の傾斜角度を有する傾斜面を備えた結晶体と、該結晶体の該傾斜面と対応する傾斜面を備えたガラス体とからなり、該結晶体の該傾斜面と該ガラス体の該傾斜面が結合して構成されている、請求項１から４のいずれかに記載のレーザー加工装置。   The birefringent deflection plate includes a crystal body having an inclined surface having a predetermined inclination angle, and a glass body having an inclined surface corresponding to the inclined surface of the crystal body, and the inclined surface of the crystal body The laser processing apparatus according to claim 1, wherein the inclined surface of the glass body is combined. 該レーザー光線発振手段と該複屈折レンズとの間には、該集光レンズによるレーザー光線の集光点深さ位置を変位せしめる集光点深さ変位手段が配設されている、ことを特徴とする、請求項１から５のいずれかに記載のレーザー加工装置。   A condensing point depth displacement means for displacing a condensing point depth position of the laser beam by the condensing lens is disposed between the laser beam oscillation means and the birefringent lens. The laser processing apparatus according to any one of claims 1 to 5.
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