JP2006349601A - Infrared temperature sensor and manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an infrared temperature sensor suitable for temperature measurement of a nano-area by providing a structure in which the distance between an infrared transmitting window and an infrared sensing part is freely reduced, and the diameter of the infrared transmitting window is also freely reduced. <P>SOLUTION: A shielding substrate 2 having the infrared transmitting window 22 in a lower area 21 of a stepped part is opposed to a sensor substrate 1 having an infrared detection part 11. The sensor substrate 1 is bonded to the shielding substrate 2 while locating the infrared detection part 11 on an extension line of the infrared transmitting window 22. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an infrared temperature sensor that measures the temperature of a minute region such as a material or a device in the nanotechnology field, and a method for manufacturing the same.

  Along with the progress of nanotechnology, in the bio research field, the material research field or the electronic device research field, many efforts have been made to evaluate the thermophysical properties of living organisms and materials and to solve the thermal problems of electronic devices. There is a strong demand for a temperature sensor that can measure the distribution with high accuracy.

  When measuring the temperature distribution of such a minute region, it is important to prevent the measurement target from being affected by heat conduction, deformation, or destruction, and a non-contact temperature measurement method is required.

  As a non-contact type temperature sensor, a non-contact type infrared sensor using a silicon substrate disclosed in Patent Document 1 is known. In the infrared sensor disclosed in Patent Document 1, as shown in FIG. 23, a silicon oxynitride film 105 is formed on both surfaces of a silicon substrate 102, and one silicon oxynitride film 105 is provided with an infrared sensitive portion 106b. An infrared transmission window 107 is provided on the other silicon oxynitride film 105.

  The silicon substrate 102 is partially etched away between the infrared transmitting window 107 and the infrared sensitive portion 106b to form a cavity 103, and the distance between the infrared transmitting window 107 and the infrared sensitive portion 106b is the silicon substrate 102. Is equal to the thickness of Further, in the silicon substrate 102, the peripheral portion of the cavity 103 is a casing of the entire temperature sensor.

  Such an infrared sensor uses a silicon substrate 102 having a thickness of several hundred μm or more in order to ensure the strength of the entire temperature sensor, and the distance between the infrared transmission window 107 and the infrared sensitive portion 106b is also several hundred μm. That's it. Therefore, when measuring weak radiant energy, that is, measuring the temperature of the nano-region with a diameter of about 1 μm or less or the temperature of a low-temperature region of about several tens of degrees Celsius, the energy that reaches the infrared sensitive part 106b is insufficient, and the sensitivity There was a shortcoming that the temperature could not be measured.

Further, since the infrared absorption film 108 of the infrared sensitive portion 106b is formed by vapor deposition through the infrared absorption window 107, the diameter of the infrared absorption window 107 must be secured to a size of about 100 μm that allows vapor deposition. For this reason, there is a drawback that the temperature distribution in a region whose diameter is smaller than about several tens of μm cannot be measured.
JP-A-6-160173

The present invention eliminates the restriction of the distance between the infrared transmission window and the infrared sensitive part as in the conventional infrared sensor by the thickness of the silicon substrate, and allows the distance between the infrared transparent window and the infrared sensitive part to be freely reduced. It is an object of the present invention to provide an infrared temperature sensor suitable for measuring the temperature in the nano region by allowing the infrared transmission window to be freely reduced in diameter.
It is another object of the present invention to provide a method for manufacturing an infrared temperature sensor that can be easily manufactured with high accuracy using MEMS technology or the like.

  According to the present invention, there is provided a shielding substrate in which a step portion is formed on one surface, an infrared passage window is provided in a low region of the step portion, and a sensor substrate in which an infrared detection portion is provided on one surface. The surface of the shielding substrate on which the stepped portion is formed and the surface of the sensor substrate on which the infrared detection unit is provided are opposed to each other, and the infrared detection unit is positioned on an extension line of the infrared passage window. An infrared temperature sensor is obtained in which a substrate and the sensor substrate are bonded.

  In addition, an infrared temperature sensor is provided in which the shielding substrate is made of silicon or germanium. Furthermore, an infrared temperature sensor is provided in which the infrared detector has a pyroelectric effect element.

  Further, the present invention provides an infrared temperature sensor, wherein the infrared detection unit is supported on the sensor substrate via a bridging unit.

  Furthermore, according to the present invention, a first substrate step of forming a stepped portion on one surface of the first substrate and forming an infrared passage window in a low region of the stepped portion, and an infrared ray on one surface of the second substrate A second substrate step for forming a detection portion; a surface on which the step portion of the first substrate obtained in the first substrate step is formed; and an infrared detection portion for the second substrate obtained in the second substrate step. And a bonding step of bonding the first substrate and the second substrate by positioning the infrared detection unit on an extension line of the infrared passage window. A temperature sensor manufacturing method is obtained.

  The first substrate step includes a step of forming a stepped portion on one surface of the first substrate by etching, and a step of forming an infrared passage window in a low region of the stepped portion by focused ion beam processing. An infrared temperature sensor manufacturing method is provided.

  Further, the second substrate step includes a step of forming a first electrode with a conductive thin film on one surface of the second substrate, a pyroelectric effect thin film and a conductive thin film on the first electrode formed in the step. And a step of forming a pyroelectric element and a second electrode by laminating and a method of manufacturing an infrared temperature sensor.

  According to the present invention, the shielding substrate provided with the infrared passage window in the low region of the stepped portion faces the sensor substrate provided with the infrared detection portion on one surface, and the infrared detection portion is an extension of the infrared passage window. Since the joint is located on the line, the distance between the infrared passage window and the infrared detector can be arbitrarily set in accordance with the step of the step portion while ensuring the strength of the entire temperature sensor by the sensor substrate. In addition, the size of the infrared passage window can be freely selected without being restricted by the formation process of the infrared detector.

  Therefore, the step of the step portion can be reduced as necessary, the distance between the infrared transmission window and the infrared sensitive portion can be made closer to increase the temperature measurement sensitivity, and the diameter of the infrared transmission window can be set to a desired size. As a result, it is possible to measure the temperature in the nano region with high accuracy.

  When the level difference of the step portion is 10 μm or less, it becomes easy to measure the temperature of a minute region having a diameter of about 1 μm or less or the temperature of a cell in a low temperature region of about several tens of degrees Celsius.

  Further, when the diameter of the infrared transmission window is 1 μm or less, the temperature distribution of a minute region having a diameter of about several tens of μm or less can be accurately measured.

  Further, when the shielding substrate is made of silicon or germanium, a step portion having a small step can be easily formed using a MEMS technique, and a small infrared transmission window can be easily formed. The shielding substrate can enhance the infrared shielding effect when a metal thin film such as aluminum is deposited on the surface on which infrared rays are incident.

  Furthermore, if the infrared detection unit has a pyroelectric effect element, the temperature can be observed by the potential generated according to the change of the spontaneous polarization, so that the energization current of the infrared detection unit becomes unnecessary. Therefore, the infrared detection unit does not generate heat due to the energization current, and can achieve a lower temperature than the one that observes the temperature due to the current change caused by the resistance value change, and can suppress the noise and increase the measurement sensitivity. . It is also possible to increase the response speed during measurement.

  As the pyroelectric effect element, an element using PZT or zinc oxide is preferable because the pyroelectric effect is large.

  The electrode material of the pyroelectric effect element is preferably Au, Pt, Ag or Cu. Since these have low electrical resistance and low thermal resistance, the measurement sensitivity can be increased. Ni is preferable as an electrode material because of its large heat absorption.

  In addition, when the infrared detection unit is supported on the sensor substrate via the bridging unit, heat conduction between the infrared detection unit and the sensor substrate is suppressed, the response speed is high, and highly sensitive temperature measurement is possible. When the sensor substrate is made of silicon or germanium, it is easy to form a crosslinked portion by anisotropic etching.

  Further, according to the present invention, the step portion is formed on the first substrate, the infrared passage window is formed in the region where the step portion is low, the infrared detection portion is formed on one surface of the second substrate, The surface on which the step portion is formed and the surface on which the infrared detection portion of the second substrate is formed are opposed to each other, and the infrared detection portion is positioned on the extension line of the infrared passage window and bonded together. The distance to the part is set by the step of the step part. And since an infrared detection part can be formed without utilizing an infrared passage window, the magnitude | size of an infrared passage window can be made small freely.

  In the first substrate process, if a step portion is formed on one surface of the first substrate by etching, a step of 10 nm to several tens of μm can be easily formed. In particular, when the first substrate is silicon or germanium, the step portion can be formed in a tapered shape by applying anisotropic etching. Therefore, even if the first substrate is thin, the taper-shaped stepped portion can suppress the deflection of the first substrate, and processing can be performed with accuracy in the subsequent steps. Further, when the infrared passage window is formed by focused ion beam processing, an infrared passage window having a diameter of 10 nm to several tens of μm can be easily and accurately formed.

  Further, in the second substrate process, a first electrode is formed on one surface of the second substrate, and a pyroelectric element and a second electrode are formed by laminating a pyroelectric effect thin film and a conductive thin film on the first electrode. Then, the pyroelectric element and the second electrode can be formed with the same resist pattern, and the process can be simplified.

  After the step of forming the pyroelectric element and the second electrode, the surface of the second substrate on which the pyroelectric effect element is formed is appropriately patterned to form a bridging portion that supports the pyroelectric effect element. Is possible.

  When the second substrate is made of silicon or germanium, it is easy to form a crosslinked portion by an etching technique.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a partial perspective view showing a main configuration of an infrared temperature sensor according to an embodiment of the present invention. In FIG. 1, 1 is a silicon substrate which is a sensor substrate, and 2 is a silicon substrate which is a shielding substrate. An infrared detector 11 is provided on the surface of the silicon substrate 1 facing the silicon substrate 2 as will be described below with reference to FIG.

A step portion of a step t1 is formed on the surface of the silicon substrate 2 facing the silicon substrate 1, and a lower region 21 thereof faces the infrared detection unit 11 while maintaining a distance t1, and the infrared detection unit 11 of the silicon substrate 2 An infrared passage window 22 is provided immediately below the window.
Further, the silicon substrate 2 is bonded to the silicon substrate 1 in a region 23 having a high step. In FIG. 1, only the main parts of the silicon substrate 1 and the silicon substrate 2 are shown for convenience of explanation.

  FIG. 2 is a cross-sectional view of an essential part along the line SS ′ passing through the sensor center of the infrared temperature sensor shown in FIG. The infrared detection unit 11 provided on the silicon substrate 1 is opposed to the infrared passage window 22 having a diameter of Φ1 provided on the silicon substrate 2 immediately below, and when the lower side of the silicon substrate 2 is brought close to the measurement object 3. The infrared rays radiated from the measurement object 3 are incident on the infrared detection unit 11 via the infrared passage window 22, and the infrared detection unit 11 can measure the temperature of the measurement object 3.

  Next, details of the silicon substrate 1 will be described with reference to FIG. FIG. 3 is a plan view and a cross-sectional view of main parts of the silicon substrate 1 shown in FIG.

  3 (h) is a plan view of the principal part of the silicon substrate 1, FIG. 3 (v) is a cross-sectional view taken along the line AA ′ of FIG. 3 (h), and FIG. 3 (t) is a cross-sectional view of FIG. It is sectional drawing along a BB 'line.

  The infrared detecting unit 11 is formed on the silicon substrate 1 via the SiO2 thin film 12, and has a configuration in which a lower electrode 13, a PZT element 14 as a pyroelectric effect element, and an upper electrode 15 are sequentially stacked. The lower electrode 13 is connected to an extraction electrode 16 formed of the same conductive film as the lower electrode 13 via an extraction line.

  Further, the upper electrode 15 is connected to an extraction electrode 17 formed at a position symmetrical to the extraction electrode 16 and the line AA ′ via an extraction line. The lead electrode 17 and the lead wire connected to the lead electrode 17 are formed by laminating films forming the PZT element 14 and the upper electrode 15.

  Next, details of the silicon substrate 2 will be described with reference to FIG. FIG. 4 is a perspective view of the main part of the silicon substrate 2. As shown in FIG. 4, the silicon substrate 2 is formed by etching a part 21 on the side facing the infrared detection unit 11 to a depth t1 to provide a step. Thus, an infrared passage window 22 having a diameter of Φ1 is provided immediately below the infrared detector 11 in the lower region 21.

  The silicon substrate 2 has a metal thin film 24 such as aluminum deposited on the surface on which infrared rays are incident, thereby enhancing the infrared shielding effect.

  The boundary between the low region 21 and the high region 23 of the silicon substrate 2 is an inclined step.

  In such an infrared temperature sensor, when the diameter Φ1 of the infrared passage window 22 is appropriately set in the range of 10 nm to 1000 nm and one side of the infrared detection unit 11 is appropriately set in the range of 1 μm to 1000 μm, the diameter is about several tens of μm or less. It is possible to accurately measure the temperature distribution of the minute region of the measurement object 3.

  Further, when the step t1 of the silicon substrate 2 is 10 μm or less, it becomes easy to measure the temperature of a minute region having a diameter of about 1 μm or less or the temperature of a cell in a low temperature region of about several tens of degrees Celsius.

  Note that the thickness of the silicon substrate 2 provided with the infrared passage window 22 is desirably 10 μm or less. Then, the manufacturing method of such an infrared temperature sensor is demonstrated using drawing.

  5 to 16 are main part process diagrams showing the manufacturing process of the silicon substrate 1 constituting the infrared temperature sensor according to the embodiment of the present invention. 5 (h) is a plan view of the principal part of the silicon substrate 1 at the same position as the silicon substrate 1 shown in FIG. 3 (h), and FIG. 5 (v) is a cross-sectional view taken along line AA in FIG. 5 (h) is a cross-sectional view taken along the line drawn in FIG. 5 (h) at the same position as the line, and FIG. 5 (t) is a cross-sectional view taken along the line drawn in FIG. 5 (h) at the same position as the line BB 'in FIG. It is a figure and each drawn line is omitted.

  The same applies to FIGS. 6 (h), 6 (v) and 6 (t) to 16 (h), 16 (v) and 16 (t).

  First, as shown in FIGS. 5 (h), 5 (v) and 5 (t), a silicon substrate 1 having a predetermined thickness is prepared. Next, as shown in FIGS. 6 (h), 6 (v) and 6 (t), a SiO2 thin film 31 is formed on one surface of the silicon substrate 1 to a predetermined thickness by thermal oxidation.

  Thereafter, a positive resist is applied to the entire surface and exposed to form a resist pattern 41 as shown in FIGS. 7 (h), 7 (v) and 7 (t).

  Next, the SiO2 thin film 31 is dry-etched according to the pattern 41 to form a pattern of the SiO2 thin film 12 as shown in FIGS. 8 (h), 8 (v) and 8 (t). Further, a positive resist is applied to the entire surface and exposed to form a resist pattern 42 as shown in FIGS. 9 (h), 9 (v) and 9 (t).

  Subsequently, as shown in FIGS. 10 (h), 10 (v) and 10 (t), a Ti / Pt thin film 32 is formed on the entire surface by sputtering to a predetermined thickness. Thereafter, the Ti / Pt thin film 32 is lifted off according to the resist pattern 42, and the lower electrode of the infrared detecting section 11 is formed on the SiO2 thin film 12 as shown in FIGS. 11 (h), 11 (v) and 11 (t). 13. Form extraction electrodes 16 and extraction lines connecting them.

  Next, as shown in FIG. 12 (h), FIG. 12 (v) and FIG. 12 (t), a PZT thin film 33 is formed on the entire surface by sputtering to a predetermined thickness, and FIGS. As shown in v) and FIG. 13 (t), a Ni thin film 34 is formed on the entire upper surface thereof to a predetermined thickness by sputtering.

  Here, the sputter deposition of the PZT thin film 33 is performed, for example, by magnetron sputtering, and can be performed using a Pb rich target rather than PZT (Pb (Zr0.48Ti0.52) O3). For example, the substrate temperature is 700 ° C., the pressure is 3 mTorr, the power is 200 W, and Ar gas is used as the atmospheric gas.

  Further, a negative resist is applied to the entire upper surface of the Ni thin film 34 and exposed to form a resist pattern 43 as shown in FIGS. 14 (h), 14 (v) and 14 (t).

  Next, the PZT thin film 33 and the Ni thin film 34 in the region not covered with the resist pattern 43 are removed by the RIE (reactive ion etching) method, as shown in FIGS. 15 (h), 15 (v) and 15 (t). Thus, the pyroelectric effect element 14, the upper electrode 15, and the lead wire connecting them are formed.

  Thereafter, the resist pattern 43 is removed, and the silicon substrate 1 as the sensor substrate is completed as shown in FIGS. 16 (h), 16 (v) and 16 (t). 17 to 22 are principal part process diagrams showing the manufacturing process of the silicon substrate 2 constituting the infrared temperature sensor according to the embodiment of the present invention.

  17 (h) is a plan view of the principal part of the silicon substrate 2 at the same position as the silicon substrate 2 shown in FIG. 4, and FIG. 17 (v) is the same as the CC ′ line in FIG. FIG. 17 is a cross-sectional view taken along the line drawn in FIG. 17 (h) at the position, and the drawn line is omitted. The same applies to FIGS. 18 (h), 18 (v) to 22 (h), and 22 (v).

  First, as shown in FIGS. 17 (h) and 17 (v), a silicon substrate 2 having a predetermined thickness is prepared, and subsequently, as shown in FIGS. 18 (h) and 18 (v), silicon An aluminum metal thin film 24 having a predetermined thickness is formed on one surface of the substrate 2 by sputter deposition.

  Next, as shown in FIGS. 19H and 19V, a resist is applied to the other surface of the silicon substrate 2 and exposed to form a resist pattern 61. Here, the resist pattern 61 forms a stepped portion on the silicon substrate 2 and has a shape exposing a region having a low stepped portion.

  Next, as shown in FIGS. 20 (h) and 20 (v), anisotropic etching is performed on the exposed surface of the silicon substrate 2, and the etching is terminated when the etching is performed by the depth t1. Form.

  In the silicon substrate 2, an inclined surface is formed by anisotropic etching from the boundary line of the resist pattern 61 toward the region 21 having a low stepped portion. Next, the resist pattern 61 is removed, and as shown in FIGS. 21 (h) and 21 (v), the high region 23 of the step portion of the silicon substrate 2 is exposed.

  Next, as shown in FIGS. 22 (h) and 22 (v), a diameter penetrating the silicon substrate 2 and the metal thin film 24 is formed at a predetermined position in the low region 21 of the stepped portion of the silicon substrate 2 by focused ion beam processing. An infrared passage window 22 of Φ1 is formed.

  After that, the side of the silicon substrate 1 shown in FIG. 16 where the infrared detecting portion 11 is formed and the side where the stepped portion of the silicon substrate 2 shown in FIG. Positioning is performed so that the center of the detection unit 11 is located, and the silicon substrate 1 is joined to the region 23 having a high stepped portion of the silicon substrate 2 to form an integrated structure as shown in FIG.

  Thereby, an infrared temperature sensor is completed. The silicon substrate 2 and the silicon substrate 1 are bonded by, for example, room temperature bonding.

  Although the detailed description is omitted, the lead electrode 16 and the lead electrode 17 and the wiring for connecting the outside to the outside are appropriately formed on the silicon substrate 1 or the silicon substrate 2.

  In the infrared temperature sensor shown in FIG. 1, the space where the infrared detection unit 11 is formed between the silicon substrate 1 and the silicon substrate 2 is a peripheral portion of the silicon substrate 1 and the silicon substrate 2 cut out for convenience of explanation. 3 side surfaces are open. However, the high step region of the silicon substrate 2 surrounds the low step region, and the space in which the infrared detection unit 11 is formed is the same as the silicon substrate 1 and the silicon substrate except for the infrared passage window 22. It is shielded by 2 and has a structure in which external light does not enter.

  Also, as shown in FIGS. 16 (h), 16 (v), and 16 (t), after the silicon substrate 1 as the sensor substrate is completed, the periphery of the pyroelectric effect element 14 and the pyroelectric effect element 14 are appropriately set. By forming a resist pattern covering the periphery of the lead line and performing anisotropic etching, a bridging portion that bridges the pyroelectric effect element 14 and the silicon substrate 1 can be formed.

  Further, in the infrared temperature sensor of the above-described embodiment, one infrared detection unit is provided, but two infrared detection units are provided side by side, an infrared passage window is opposed to only one infrared detection unit, and the other If the infrared rays are not incident on the infrared rays, the infrared rays can be detected by the differential output of the infrared ray detectors.

The infrared temperature sensor according to the present invention can perform temperature measurement in the nano region with high sensitivity and high speed. In the bio research field, the material research field or the electronic device research field, etc. It can be used to solve thermal problems.

It is a principal part perspective view which shows the structure of the infrared temperature sensor of embodiment of this invention. It is principal part sectional drawing of the infrared temperature sensor shown in FIG. It is the principal part top view and principal part sectional drawing of the silicon substrate 1 regarding the infrared temperature sensor shown in FIG. It is a principal part perspective view of the silicon substrate 2 regarding the infrared temperature sensor shown in FIG. It is a 1st principal part process drawing which shows the manufacturing process of the silicon substrate 1 concerning the infrared temperature sensor of embodiment of this invention. It is a 2nd principal part process drawing which shows the manufacturing process of the silicon substrate 1 concerning the infrared temperature sensor of embodiment of this invention. It is a 3rd principal part process drawing which shows the manufacturing process of the silicon substrate 1 concerning the infrared temperature sensor of embodiment of this invention. It is a 4th principal part process drawing which shows the manufacturing process of the silicon substrate 1 concerning the infrared temperature sensor of embodiment of this invention. It is a 5th principal part process drawing which shows the manufacturing process of the silicon substrate 1 concerning the infrared temperature sensor of embodiment of this invention. It is a 6th principal part process drawing which shows the manufacturing process of the silicon substrate 1 concerning the infrared temperature sensor of embodiment of this invention. It is a 7th principal part process drawing which shows the manufacturing process of the silicon substrate 1 concerning the infrared temperature sensor of embodiment of this invention. It is a 8th principal part process drawing which shows the manufacturing process of the silicon substrate 1 concerning the infrared temperature sensor of embodiment of this invention. It is a 9th principal part process drawing which shows the manufacturing process of the silicon substrate 1 concerning the infrared temperature sensor of embodiment of this invention. It is a 10th principal part process drawing showing a manufacturing process of silicon substrate 1 concerning an infrared temperature sensor of an embodiment of the invention. It is a 11th principal part process drawing which shows the manufacturing process of the silicon substrate 1 concerning the infrared temperature sensor of embodiment of this invention. It is a 12th principal part process drawing showing a manufacturing process of silicon substrate 1 concerning an infrared temperature sensor of an embodiment of the invention. It is a 1st principal part process drawing which shows the manufacturing process of the silicon substrate 2 concerning the infrared temperature sensor of embodiment of this invention. It is a 2nd principal part process drawing which shows the manufacturing process of the silicon substrate 2 concerning the infrared temperature sensor of embodiment of this invention. It is a 3rd principal part process drawing which shows the manufacturing process of the silicon substrate 2 concerning the infrared temperature sensor of embodiment of this invention. It is a 4th principal part process drawing which shows the manufacturing process of the silicon substrate 2 concerning the infrared temperature sensor of embodiment of this invention. It is a 5th principal part process drawing which shows the manufacturing process of the silicon substrate 2 concerning the infrared temperature sensor of embodiment of this invention. It is a 6th principal part process drawing which shows the manufacturing process of the silicon substrate 2 concerning the infrared temperature sensor of embodiment of this invention. It is explanatory drawing of the conventional infrared temperature sensor published in patent document 1. FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Silicon substrate 2 Silicon substrate 3 Measuring object 11 Infrared detection part 12, 31 SiO2 thin film SiO2 thin film 13 Lower electrode 14 PZT element 15 Upper electrode 16, 17 Extraction electrode 21 Low step area 22 Infrared passage window 23 High step part Area 24 Metal thin film 32 Ti / Pt thin film 33 PZT thin film 34 Ni thin film

Claims (7)

  A stepped portion formed on one surface, a shielding substrate provided with an infrared transmission window in a lower region of the stepped portion, and a sensor substrate provided with an infrared detecting portion on one surface; The surface on which the portion is formed and the surface on which the infrared detection portion of the sensor substrate is provided are opposed to each other, and the infrared detection portion is positioned on an extension line of the infrared passage window, and the shielding substrate, the sensor substrate, An infrared temperature sensor characterized in that is bonded.   2. The infrared temperature sensor according to claim 1, wherein the shielding substrate is made of silicon or germanium.   The infrared temperature sensor according to claim 1, wherein the infrared detection unit includes a pyroelectric effect element.   The infrared temperature sensor according to claim 1, wherein the infrared detection unit is supported on the sensor substrate via a bridging unit.   A first substrate step of forming a stepped portion on one surface of the first substrate and forming an infrared passage window in a low region of the stepped portion, and a second forming an infrared detecting portion on one surface of the second substrate A substrate step, a surface on which the step portion of the first substrate obtained in the first substrate step is formed, and a surface on which the infrared detection portion of the second substrate obtained in the second substrate step is formed. A method of manufacturing an infrared temperature sensor, comprising: a bonding step of bonding the first substrate and the second substrate with the infrared detection portion positioned on an extension line of the infrared passage window.   The first substrate step includes a step of forming a stepped portion on one surface of the first substrate by etching, and a step of forming an infrared passage window in a low region of the stepped portion by focused ion beam processing. The manufacturing method of the infrared temperature sensor of Claim 5. The second substrate step includes a step of forming a first electrode with a conductive thin film on one surface of the second substrate, and a pyroelectric effect thin film and a conductive thin film on the first electrode formed in the step. 6. The method of manufacturing an infrared temperature sensor according to claim 5, further comprising a step of forming a pyroelectric element and a second electrode by stacking.