JP2006344327A - Thin film magnetic head having cavity - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a thin film magnetic head that avoids troubles such as thermal asperity or clash by securely controlling an effective distance d<SB>M</SB>between an end of a magnetic head element and a magnetic disk surface even if the head is reduced in size, HGA having the thin film magnetic head, and HDD having the HGA. <P>SOLUTION: A thin film magnetic head has a substrate, and a magnetic head element including at least one reading magnetic head element and at least one writing magnetic head element provided on the substrate. At least one cavity having a closed space for absorbing part of thermal expansion of the magnetic head element is provided near the magnetic head element, or between the at least one reading magnetic head element and the at least one writing magnetic head element. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a thin film magnetic head for writing and reading a magnetic field signal, a head gimbal assembly (HGA) including the thin film magnetic head, and a magnetic disk device (HDD) including the HGA.

  The thin-film magnetic head provided in the HDD floats hydrodynamically with a predetermined gap (flying amount) on the rotating magnetic disk when signals are written or read. In this floating state, the thin film magnetic head writes a signal to the magnetic disk using a magnetic field generated from the electromagnetic coil element, and reads and reads the signal magnetic field from the magnetic disk by a magnetoresistive (MR) effect element. .

With the recent increase in recording density accompanying the increase in capacity of HDDs, the track width of thin film magnetic heads is set to a smaller value. In order to avoid a decrease in writing and reading ability due to this setting, in recent HDDs, the flying height is further reduced, and the magnetic effective distance d _M between the magnetic head element end and the magnetic disk surface is designed to be smaller. Tend to. Indeed, the value of the effective distance d _M is set to 10nm about or less.

When a current for recording is applied to the electromagnetic coil element of the magnetic head element, generally, the magnetic head element protrudes toward the surface of the magnetic disk due to thermal expansion due to Joule heat, eddy current loss heat, or the like. TPTP (Thermal Pole Tip Protrusion) phenomenon occurs. Here, if the effective distance d _M is set to small value as described above, there is a risk that the edge of the magnetic head element protruding resulting in contact with the magnetic disk surface. When such contact occurs, a problem (thermal asperity) such as an abnormal signal being generated due to a change in the electrical resistance value of the MR effect element due to frictional heat at that time may occur. Furthermore, the risk of crashing is increased.

In order to avoid such a contact that causes such a problem, a technique is disclosed in which a heating element is provided in the vicinity of the magnetic head element, and rather, the effective distance d _M is controlled by actively utilizing the TPTP phenomenon (for example, Patent Documents 1, 2, and 3). In these techniques, the effective distance d _M designed in anticipation of projecting by heat in advance the heating element, at the time of driving thereby achieving the adjustment of the effective distance d _M by energization of the heating element.

U.S. Pat. No. 5,991,113 JP 2003-272335 A JP 2003-168274 A

However, with further miniaturization of HDD, a problem that limits to control the effective distance d _M using a heating element it occurs had occurred.

  Currently, in various types of mobile phones and other mobile devices, HDDs are actively installed because of the need to record a large amount of information. At that time, the HDD is required to have a large capacity and a very small size. Along with this reduction in capacity, further reduction in size is inevitable in the corresponding thin film magnetic head.

Such a heating element is provided in the miniaturized in the thin film magnetic head, attempting to control the effective distance d _M only the heating element, it is difficult to set the distance of the heating element and the magnetic head element to a sufficient size, Further, since the thermally expanding magnetic head element itself is further miniaturized, it is very difficult to control.

Further, in a thin film magnetic head having a miniaturized structure, when a structure such as a heating element is formed with a predetermined accuracy and reliability, both man-hours and costs are considerably burdened. That is, instead of the heating element, or as a heating element in conjunction means for controlling the effective distance d _M are hardly employed those having a complicated structure.

Accordingly, an object of the present invention, ensuring even when miniaturized, by controlling the effective distance d _M of the magnetic head element end and the magnetic disk surface, can be avoided thermal asperity or failure crash like An object of the present invention is to provide a thin film magnetic head, an HGA equipped with the thin film magnetic head, and an HDD equipped with the HGA.

Before describing the present invention, terms used in the specification will be defined.
In the laminated structure of magnetic head elements formed on the element formation surface of the substrate, the component on the substrate side with respect to the reference layer is assumed to be “below” or “below” the reference layer, which becomes the reference It is assumed that the component located on the side in the stacking direction from the layer is “above” or “above” the reference layer. For example, “the lower magnetic pole layer is on the insulating layer” means that the lower magnetic pole layer is on the side of the stacking direction with respect to the insulating layer.

  Further, when comparing the positions of two components in one laminated structure, the closer to the element formation surface is defined as “lower”, and the farther is defined as “upper”. For example, of the two magnetic pole layers provided in the electromagnetic coil element, the “lower magnetic pole layer” means the one closer to the element formation surface.

  According to the present invention, a thin film magnetic head comprising a substrate and a magnetic head element including at least one read magnetic head element and at least one write magnetic head element provided on the substrate, the magnetic head At least one cavity having a sealed space for absorbing part of the thermal expansion of the magnetic head element in the vicinity of the element or between at least one read magnetic head element and at least one write magnetic head element; A thin film magnetic head is provided.

  It is also preferable that a covering portion is provided on the substrate so as to cover the magnetic head element, and at least one of the hollow portions is formed in the covering portion. At this time, it is preferable that at least one of the hollow portions has a sealed space for absorbing a part of the thermal expansion of the covering portion. Furthermore, it is also preferable that at least one heat generating means is provided on the substrate.

A cavity having a sealed space is provided in the vicinity of the magnetic head element or between the read magnetic head element and the write magnetic head element. For this reason, when the magnetic head element or the covering portion is thermally expanded during a writing operation or when the heating means is operated, the sealed space of the hollow portion absorbs a part of the thermal expansion in a form of protruding the inner wall. . At this time, the position of the cavities, the size, by appropriately setting the shape and structure, etc., can control the effective distance d _M by adjusting the protrusion of the magnetic disk surface direction of the magnetic head element. As a result, it is possible to improve read and write characteristics while avoiding thermal asperities and crashes.

  Here, it is also preferable that at least one of the hollow portions is located on the opposite side to the air bearing surface of the magnetic head element, and it is also preferred that it is located on the opposite side to the substrate of the magnetic head element. Furthermore, it is also preferable that at least a part of at least one cavity is provided in the substrate. When the hollow portion is provided at such a position and in the vicinity of the magnetic head element, it is possible to effectively absorb thermal expansion other than the direction in which the head end surface of the magnetic head element is raised.

  Further, it is preferable that the contour shape of the cavity has a symmetry plane perpendicular to the air bearing surface, and this symmetry surface coincides with the symmetry surface perpendicular to the air bearing surface of the magnetic head element. Furthermore, it is also preferable that a plurality of cavities are provided, and the plurality of cavities are arranged at plane-symmetric positions with a plane of symmetry perpendicular to the air bearing surface of the magnetic head element. When the hollow portions are arranged as described above, the symmetry of the protrusion of the magnetic head element in the track width direction can be ensured.

  Further, in order to effectively absorb the thermal expansion, the air pressure in the sealed space of the cavity is preferably less than 1 atm at the back pressure level of the vacuum film forming apparatus or at the head driving temperature. However, it is within the scope of the present invention as long as thermal expansion is effectively absorbed even if a gas of 1 atm or more is contained at the head driving temperature.

  It is also preferred that the cavity has at least one reinforcing column or reinforcing wall inside itself. Thereby, for example, it is possible to form a large-sized cavity that absorbs a large part of thermal expansion, such as a magnetic head element.

  According to the present invention, there is further provided an HGA that includes the above-described thin film magnetic head, and further includes a signal line for the magnetic head element and a support mechanism that supports the thin film magnetic head.

  Further, according to the present invention, at least one HGA described above is provided, and at least one magnetic disk, and writing and reading operations performed by the above-described thin film magnetic head on the at least one magnetic disk are controlled. There is further provided an HDD further comprising a recording / reproducing circuit for the purpose.

According to the thin film magnetic head of the present invention, the HGA including the thin film magnetic head, and the HDD including the HGA, the effective distance d _M between the end of the magnetic head element and the surface of the magnetic disk is ensured even when the size is reduced. Can be controlled. As a result, troubles such as thermal asperity and crash can be avoided.

  EMBODIMENT OF THE INVENTION Below, the form for implementing this invention is demonstrated in detail, referring an accompanying drawing. In the drawings, the same elements are denoted by the same reference numerals. In addition, the dimensional ratios in the components in the drawings and between the components are arbitrary for easy viewing of the drawings.

  FIG. 1 is a perspective view schematically showing a configuration of a main part in an embodiment of an HDD according to the present invention, and FIG. 2 is a perspective view schematically showing an embodiment of an HGA according to the present invention. 3A is a perspective view schematically showing a thin film magnetic head (slider) attached to the tip of the HGA in the embodiment of FIG. 2, and FIG. 3B is a perspective view of FIG. It is a top view which shows roughly one Embodiment of the magnetic head element of A).

  In FIG. 1, 10 is a plurality of magnetic disks rotating around the rotation axis of the spindle motor 11, 12 is an assembly carriage device for positioning a thin film magnetic head (slider) 21 on a track, and 13 is this thin film. 2 shows a recording / reproducing circuit for controlling writing and reading operations of the magnetic head.

  The assembly carriage device 12 is provided with a plurality of drive arms 14. These drive arms 14 can be angularly swung about a pivot bearing shaft 16 by a voice coil motor (VCM) 15 and are stacked in a direction along the shaft 16. An HGA 17 is attached to the tip of each drive arm 14. Each HGA 17 is provided with a thin film magnetic head (slider) 21 so as to face the surface of each magnetic disk 10. The magnetic disk 10, the drive arm 14, and the HGA 17 may be singular.

  As shown in FIG. 2, the HGA 17 is configured by fixing a slider 21 having a magnetic head element to the tip of a suspension 20 and electrically connecting one end of a wiring member 25 to a terminal electrode of the slider 21. The

  The suspension 20 includes a load beam 22, a flexure 23 having elasticity fixedly supported on the load beam 22, a base plate 24 provided at the base of the load beam 22, and a lead conductor provided on the flexure 23. And the wiring member 25 which consists of the connection pad electrically connected to the both ends is comprised mainly. Although not shown, a head driving IC chip may be mounted in the middle of the suspension 20.

  As shown in FIG. 3A, the thin film magnetic head (slider) 21 includes an air bearing surface (ABS) 30 processed so as to obtain an appropriate flying height, and a magnetic head element formed on the element forming surface 31. 32, a cavity 35 which is a main component of the present invention, a heating element 36 for projecting the magnetic head element 32 in the direction of the magnetic disk by thermal expansion, and a covering layer 84 formed on the element forming surface 31 Four signal terminal electrodes 37 and two drive terminal electrodes 38 exposed from the layer surface are provided. Here, the magnetic head element 32 includes an MR effect element 33 for reading and an electromagnetic coil element 34 for writing. The four signal terminal electrodes 37 are connected to the MR effect element 33 and the electromagnetic coil element 34, and the two drive terminal electrodes 38 are connected to the heating element 36.

  The two drive terminal electrodes 38 are respectively arranged on both sides of the group of four signal terminal electrodes 37. This is an arrangement capable of preventing crosstalk between the wiring of the MR effect element 33 and the wiring of the electromagnetic coil element 34 as described in JP-A-2004-234792. However, when crosstalk is allowed, the two drive terminal electrodes 38 may be arranged at a position between any of the four signal terminal electrodes 37, for example. Note that the number of these terminal electrodes is not limited to that shown in FIG. In FIG. 3, the total number of terminal electrodes is six. However, for example, the number of electrodes may be five and the ground may be grounded to the slider substrate.

  Further, the heating element 36 is not necessarily installed, and an embodiment in which the heating element 36 is omitted is within the scope of the present invention. In that case, the two drive terminal electrodes 38 are also unnecessary.

  In the MR effect element 33 and the electromagnetic coil element 34, as shown in FIG. 3B, one end of the element reaches the head end surface 300 on the ABS 30 side. During the writing or reading operation, the slider 21 floats hydrodynamically on the surface of the rotating magnetic disk with a predetermined flying height. At this time, when the element ends face the magnetic disk, reading by sensing the signal magnetic field and writing by applying the signal magnetic field are performed. In the present embodiment, the heating element 36 is located on the opposite side of the magnetic head element 32 from the head end surface 300 (ABS 30). The magnetic head element 32 magnetically expands itself by being thermally expanded by heat generated by energization of the heating element 36 or by being extruded by thermal expansion of a material surrounding the magnetic head element. Projects toward the disc surface.

  As shown by the outline of the broken line in FIG. 3B, the hollow portion 35 is located immediately above the magnetic head element 32 in the present embodiment, and the vacuum 35 is about the back pressure of the vacuum film-forming apparatus, or 1 Consists of a sealed space containing gas below atmospheric pressure. Here, when the magnetic head element 32 or the surrounding material is thermally expanded, the cavity 35 absorbs a part of the thermal expansion that protrudes upward into its sealed space. can do. At this time, by appropriately setting the position, size, shape, structure, and the like of the cavity, the protrusion of the magnetic head element 32 toward the surface of the magnetic disk can be adjusted at a constant rate with good control. This makes it possible to improve read and write characteristics while avoiding thermal asperities and crashes. In the present embodiment, the contour shape of the cavity 35 is a rectangular parallelepiped, and has a symmetrical plane perpendicular to the head end surface 300 (ABS 30) (a plane perpendicular to the drawing sheet surface including the AA line). The symmetry plane coincides with the symmetry plane of the magnetic head element 32. As a result, the thermal expansion can be absorbed with good symmetry, and as a result, the symmetry of the protrusion of the magnetic head element 32 in the track width direction is ensured.

  Note that the position, shape, size, structure, and the like of the cavity 35 are not limited to the above-described embodiment. Other embodiments of the cavity 35 will be described in detail later.

  4A shows the configuration of the main part of the thin film magnetic head provided with the magnetic head element 32 for longitudinal magnetic recording as one embodiment of the magnetic head element of FIG. 3B. It is AA sectional view. FIG. 4B shows a configuration of a main part of a thin film magnetic head including a magnetic head element 32 ′ for perpendicular magnetic recording as another embodiment of the magnetic head element of FIG. 3B. It is AA sectional view taken on the line of (B). In FIG. 4B, components that are the same as or correspond to those of the magnetic head element 32 in FIG. 4A are denoted by the same reference numerals as in FIG. 4A, and description of the configuration is omitted. Has been. Further, the number of turns of the coil in both figures is shown to be smaller than the number of turns in FIG. 3B in order to simplify the drawings.

  In FIG. 4, reference numeral 210 denotes a slider substrate having an ABS 30 facing the surface of the magnetic disk. An MR effect element 33 for reading, an electromagnetic coil element 34 for writing, a cavity 35, a heating element 36, and the like are formed on an element forming surface 31 that is one side surface when the ABS 30 of the slider substrate 210 is the bottom surface. A covering layer 84 that protects these components is mainly formed.

  The MR effect element 33 includes an MR multilayer 332, and a lower shield layer 330 and an upper shield layer 334 disposed at positions sandwiching the multilayer. The MR multilayer 332 is composed of an in-plane energization type (CIP (Current In Plain)) giant magnetoresistance (GMR (Giant Magneto Resistive)) multilayer film, a vertical energization type (CPP (Current Perpendicular to Plain)) GMR multilayer film, or a tunnel. It includes a magnetoresistive (TMR (Tunnel Magneto Resistive)) multilayer film and senses a signal magnetic field from a magnetic disk with very high sensitivity. The upper and lower shield layers 334 and 330 prevent the MR multilayer 332 from receiving an external magnetic field that causes noise.

  When the MR multilayer 332 includes a CIP-GMR multilayer film, insulating upper and lower shield gap layers are provided between the upper and lower shield layers 334 and 330 and the MR multilayer 332, respectively. Further, an MR lead conductor layer for supplying a sense current to the MR multilayer 332 and taking out a reproduction output is formed. On the other hand, when the MR multilayer 332 includes a CPP-GMR multilayer film or a TMR multilayer film, the upper and lower shield layers 334 and 330 also function as upper and lower electrodes, respectively. In this case, the upper and lower shield gap layers and the MR lead conductor layer are unnecessary and are omitted. However, insulating layers are formed on the shield layer opposite to the head end surface 300 of the MR multilayer 332 and on both sides of the MR multilayer 332 in the track width direction.

  The electromagnetic coil element 34 is for longitudinal magnetic recording in this embodiment, and includes a lower magnetic pole layer 340, a write gap layer 341, a coil layer 343, a coil insulating layer 344 and an upper magnetic pole layer 345. The lower magnetic pole layer 340 and the upper magnetic pole layer 345 serve as a magnetic path for the magnetic flux induced by the coil layer 343, and the end portions 340a and 345a sandwich the end portion on the head end surface 300 side of the write gap layer 341. is doing. Writing to the magnetic disk for longitudinal magnetic recording is performed by the leakage magnetic field from the end position of the write gap layer 341. The ends of the lower magnetic pole layer 340 and the upper magnetic pole layer 345 on the magnetic disk side reach the head end surface 300, but the head end surface 300 is coated with diamond-like carbon (DLC) or the like as an extremely thin protective film. Has been. The coil layer 343 is one layer in the figure, but may be two or more layers or a helical coil.

  In addition, a nonmagnetic layer made of an insulating material or a metal material for separating the MR effect element 33 and the electromagnetic coil element 34 is provided between the upper shield layer 334 and the lower magnetic pole layer 340. The layer is not necessarily required. The same layer may be omitted, and the lower magnetic pole layer may also be used as the upper shield layer.

  The cavity portion 35 is composed of a vacuum about the back pressure of the vacuum film forming apparatus or a sealed space 350 containing a gas of less than 1 atm. In the present embodiment, the sealed space 350 is surrounded by an insulating material such as the covering layer 84. As described above, the protrusion of the magnetic head element can be controlled by setting the size and shape of the sealed space 350. The size and shape depend on the thickness of the insulating layer 83 and the insulating layer as will be described later. It can be determined by the patterning shape before forming 83.

  In the present embodiment, the heating element 36 is provided on the opposite side of the head end surface 300 of the magnetic head element 32 and at the same height as the coil layer 343 in the vertical direction. An insulating layer 361 is provided. It is possible to generate predetermined heat by energizing the heat generating layer 360. Note that a heat conductive layer 45 is provided immediately below the heating element 36 for controlling the temperature rise of the heating element itself to improve reliability. The heat conductive layer 45 may be directly above the heating element 36 or may be omitted if not necessary.

  Next, another embodiment of the thin film magnetic head according to the present invention will be described with reference to FIG.

  In the figure, an electromagnetic coil element 34 'is for perpendicular magnetic recording, and includes a main magnetic pole layer 340', a write gap layer 341 ', a coil layer 343', a coil insulating layer 344 ', and an auxiliary magnetic pole layer 345'. Yes. The main magnetic pole layer 340 'is a magnetic path for guiding the magnetic flux induced by the coil layer 343' while converging it to the perpendicular magnetic recording layer of the magnetic disk on which writing is performed. The magnetic pole auxiliary layer 3401 'is formed. Here, the length (thickness) in the layer thickness direction of the end 340a ′ on the head end surface 300 side of the main magnetic pole layer 340 ′ corresponds to the layer thickness of only the main magnetic pole main layer 3400 ′ and becomes smaller. Yes. As a result, a fine write magnetic field corresponding to higher recording density can be generated.

  The end portion of the auxiliary magnetic pole layer 345 ′ on the head end face 300 side is a trailing shield portion 3450 ′ having a wider layer cross section than the other portion of the auxiliary magnetic pole layer 345 ′. By providing the trailing shield portion 3450 ′, the magnetic field gradient becomes steeper between the end portion 3450a ′ of the trailing shield portion 3450 ′ and the end portion 340a ′ of the main magnetic pole layer 340 ′. As a result, the jitter of the signal output is reduced, and the error rate at the time of reading can be reduced. The coil layer 343 'is one layer in the figure, but may be two or more layers or a helical coil.

  In FIG. 4B, an inter-element shield layer 86 and a backing coil portion 85 are further formed between the MR effect element 33 ′ and the electromagnetic coil element 34 ′. The backing coil portion 85 is formed of a backing coil layer 850 and a backing coil insulating layer 851, and generates a magnetic flux generated from the electromagnetic coil element 34 'and canceling a magnetic flux loop passing through the upper and lower shield layers in the MR effect element 33. This is intended to suppress the wide area adjacent track erasure (WAIT) phenomenon, which is an unnecessary write or erase operation on the magnetic disk. Note that the magnetic flux from the backing coil portion 85 also acts in the direction of weakening the write magnetic field. Therefore, in order to limit this action within an allowable range, the number of turns of the backing coil layer 850 is set to be smaller than the number of turns of the coil layer 343 ′.

  FIG. 5 is a sectional view of the vicinity of the magnetic head element and a perspective view of the cavity, showing various modifications of the cavity according to the present invention. In addition, in the same figure, although the heat generating body is not illustrated, you may provide in positions other than the position of a cavity part.

  According to FIG. 5A, the cavity may be provided on the opposite side of the magnetic head element 32 from the slider substrate 210 and above the magnetic head element 32 (position a). This position corresponds to the position of the cavity 35 in the embodiment of FIGS. 3 and 4A and 4B. Further, the cavity may be provided at a position (position b) between the MR effect element 33 and the electromagnetic coil element 34. Further, it may be provided at a position (position c) between the slider substrate 210 and the MR effect element 33, below the magnetic head element 32 and at a position (position d or position e) in the slider substrate 210.

  Further, the cavity is in a region opposite to the head end surface 300 (ABS 30) of the magnetic head element 32, on the side opposite to the slider substrate 210 of the magnetic head element 32, and on the element formation surface more than the magnetic head element 32. A position far from 31 (position f), a position adjacent to the electromagnetic coil element 34 (position g), a position adjacent to the MR effect element 33 (position h), or a position in the slider substrate 210 (position i or position j). It may be provided.

  Each of the positions a to j described above is at a distance close to the magnetic head element 32 to such an extent that a part of the thermal expansion of the magnetic head element 32 can be absorbed, and the head end surface 300 of the magnetic head element 32 is raised. This is the position where the protrusion to be controlled can be controlled. In this specification, the range of the position that satisfies such a condition is defined as “near” the magnetic head element 32 (region 50 in FIG. 5A). However, in the case of the “near” position, the position (position b) between the MR effect element 33 and the electromagnetic coil element 34 is excluded. Therefore, the cavity according to the present invention may be provided in any position as long as it is in the vicinity of the magnetic head element or between the MR effect element 33 and the electromagnetic coil element 34.

  Further, a plurality of hollow portions may be provided. At this time, the positions of the plurality of cavities may be any of the positions a to j. For example, by disposing the plurality of cavities so as to surround the magnetic head element 32, it is possible to effectively absorb thermal expansion other than the direction in which the head end surface 300 of the magnetic head element 32 is raised. Further, by sufficiently increasing the size of the hollow portion, the hollow portion may be installed, for example, in a place from the position a to the position f or a place from the position f to the position h.

  Further, as shown in FIG. 5B, the hollow portion may be provided at a position where the symmetry plane 51 perpendicular to the head end surface 300 (ABS 30) of the magnetic head element 32 is not its own symmetry plane. However, in this case, in order to absorb thermal expansion with good symmetry, two or more cavities are arranged at plane-symmetric positions (for example, position k and position l) with the plane of symmetry as the plane of symmetry. It is preferable. Thereby, the symmetry of the protrusion of the magnetic head element 32 in the track width direction can be ensured.

  Further, like the two cavities 52 and 53 in FIG. 5C, a plurality of cavities may be arranged adjacent to each other in the vertical direction. Further, like the two cavities 54 and 55, a plurality of cavities may be arranged adjacent to each other in the direction perpendicular to the head end surface 300. 5A to 5C, the vertical positional relationship between the MR effect element 33 and the electromagnetic coil element 34 may be reversed. In this case as well, in the vicinity of the magnetic head element or the MR effect. A cavity can be provided between the element and the electromagnetic coil element.

  Furthermore, as shown in FIG. 5D, the hollow portion may include a reinforcing column 57 and / or a reinforcing wall 58 for increasing its own strength. Moreover, the cavity part may be divided | segmented into the some part by the separation wall etc. Furthermore, the outline shape of the cavity is not limited to a rectangular parallelepiped, and may be a cylinder, a cone, a column or cone having a bottom surface of an arbitrary shape, a sphere, a hemisphere, an ellipsoid, a semi-ellipsoid, or the like. . That is, any three-dimensional shape can be adopted as the shape of the cavity of the present invention as long as it is in the vicinity of the magnetic head element and can absorb thermal expansion.

  Further, the cavity portion is constituted by a sealed space 56 surrounded by an insulating material, a substrate material, and other head constituent materials. The sealed space 56 is vacuum, in order to effectively absorb thermal expansion. Or it is preferable that it is a high vacuum state about the back pressure of a vacuum film-forming apparatus. However, even if a gas of less than 1 atm is included at the head driving temperature, the thermal expansion is effectively absorbed, and therefore is within the scope of the present invention. Moreover, if it absorbs thermal expansion, it may be a gas of 1 atm or more. An inert gas such as nitrogen or argon is preferable as the kind of gas contained, but when the risk of oxidation, corrosion, etc. is considerably low, a gas such as air containing oxygen and / or water vapor may be used. Further, the hollow portion may contain, for example, a granular or powdery substance that can be mixed from the forming step, and the hollow portion may be filled with a soft material having a lower elastic modulus than the head constituent material.

  6 to 8 are process diagrams for explaining a manufacturing process of the thin film magnetic head in the embodiment shown in FIG. 4A, and show a cross section taken along line AA in FIG.

Hereinafter, the manufacturing process of the thin film magnetic head in the embodiment shown in FIG. First, as shown in FIG. 6A, on a slider substrate (wafer substrate) 210 formed of AlTiC (Al ₂ O ₃ —TiC) or the like, for example, by sputtering, for example, Al ₂ O ₃ , SiO ₂ A base insulating layer 40 made of ₂ or the like and having a thickness of about 0.5 to 5 μm is formed. Next, as shown in FIG. 6B, the thickness formed on the base insulating layer 40 by, for example, frame plating or the like, for example, NiFe, CoFeNi, CoFe, FeN, or FeZrN, or a multilayer film made of these materials. A lower shield layer 330 having a thickness of about 0.5 to 3 μm is formed. Thereafter, an insulating film made of, for example, Al ₂ O ₃ , SiO _2, or the like is formed by, for example, a sputtering method, and planarized by chemical mechanical polishing (CMP) or the like, thereby forming the planarizing layer 41.

Next, as shown in FIG. 6C, the lower shield layer 330 is made of, for example, Al ₂ O ₃ , SiO ₂ , AlN, or DLC, for example, by sputtering, chemical vapor deposition (CVD), or the like. A lower shield gap layer 331 having a thickness of about 0.01 to 0.05 μm is formed.

  Next, as shown in FIG. 6D, an anisotropic magnetoresistive (AMR) multilayer film, GMR (spin valve) having a thickness of about several tens of nanometers is formed on the lower shield gap layer 331 by, for example, sputtering. An MR multilayer film such as a multilayer film or a TMR multilayer film is formed. Next, a resist mask pattern having a negative shape of the MR lead layer (not shown) (a shape having a reverse pattern) is formed. The cross-sectional shape of the pattern is preferably a reverse taper shape suitable for later lift-off. Next, the MR multilayer film is etched using the resist mask pattern as a mask, for example, by milling. Next, without removing the resist mask pattern, a magnetic domain control layer (not shown) and an MR lead layer film are formed by, for example, sputtering. Thereafter, the resist mask pattern and the magnetic domain control layer and MR lead layer film formed thereon are dissolved and removed with an organic solvent such as acetone or NMP (lift-off method). Here, the magnetic domain control layer film is made of, for example, an antiferromagnetic material such as CoPt or CoPtCr, and has a thickness of several tens of nanometers. The film for the MR lead layer is made of a conductive material such as W, TiW, Au, AuCu, Ta, or Cu, and has a thickness of several tens of nm.

Thereafter, a resist mask pattern having a shape in which the MR multilayer film and the MR lead layer are combined is formed. The cross-sectional shape of the pattern is preferably a reverse taper shape suitable for later lift-off. Next, the MR multilayer film and the MR lead layer are etched using the resist mask pattern as a mask by, for example, a milling method. Next, an insulating film for the refill planarization layer 42 is formed by, for example, a sputtering method without removing the resist mask pattern. Thereafter, the resist mask pattern and this insulating film are removed by dissolution with an organic solvent such as acetone or NMP. By this lift-off method, the formation of the MR multilayer 332, the magnetic domain control layer, the MR lead layer, and the refill planarization layer 42 is completed. Here, the refill planarization layer 42 is made of an insulating material such as Al ₂ O ₃ , SiO ₂ , AlN, or DLC.

Next, an upper shield gap layer 333 having a thickness of about 0.01 to 0.05 μm made of, for example, Al ₂ O ₃ , SiO ₂ , AlN, or DLC is formed by, for example, sputtering or CVD. Next, the upper shield having a thickness of about 0.5 to 3 μm made of NiFe, CoFeNi, CoFe, FeN, FeZrN or the like or a multilayer film made of these materials is formed on the upper shield gap layer 333 by frame plating, for example. Layer 334 is formed. Further, the refill planarization layer 42 and the upper shield gap layer 333 are etched by, for example, a milling method using the pattern of the upper shield layer 334 as a mask. Through the above steps, the formation of the MR effect element 33 is completed. Thereafter, as shown in FIG. 6E, an insulating film made of Al ₂ O ₃ , SiO ₂ or the like is formed by, for example, a sputtering method or the like, and flattened by CMP or the like to form a flattened layer 43.

Next, as shown in FIG. 6F, an insulating material such as Al ₂ O ₃ , SiO ₂ , AlN, or DLC, or Ti, Ta, or Pt is formed on the upper shield layer 334 by, for example, sputtering or CVD. A nonmagnetic layer 44 made of a metal material such as 0.1 to 0.5 μm thick is formed to separate the MR effect element 33 and the electromagnetic coil element to be formed later. Next, as shown in FIG. 6G, the thickness formed on the nonmagnetic layer 44 by, for example, frame plating or the like, for example, NiFe, CoFeNi, CoFe, FeN, FeZrN, or the like, or a multilayer film made of these materials. A bottom pole layer 340 and a heat conductive layer 45 of about 0.5 to 3 μm are formed. Thereafter, as shown in FIG. 6H, for example, an insulating film such as Al ₂ O ₃ or SiO ₂ is formed by, for example, a sputtering method or the like, and is flattened by, for example, CMP to form the planarizing layer 46. .

Next, as shown in FIG. 7A, the thickness of about 0.01 to 0.05 μm made of an insulating material such as Al ₂ O ₃ , SiO ₂ , AlN, or DLC is formed by, for example, sputtering or CVD. A write gap layer 341 is formed. Subsequently, by removing a part of the write gap layer 341 and exposing the lower magnetic pole layer 340 through a resist mask pattern by, for example, a dry etching method such as a milling method or a reactive ion etching (RIE) method, A back gap portion 47 is formed. Next, as shown in FIG. 7B, a coil layer 343 and a heating layer 360 having a thickness of about 1 to 5 μm made of, for example, Cu are formed on the write gap layer 341 by, for example, frame plating. However, the heat generating layer 360 is separately formed of, for example, a sputtered film made of a material containing Ni, Cr, NiCu or NiCu, a material containing NiCr or NiCr, a material containing Ta or Ta, or a material containing W or W, for example. It may be formed by patterning into a desired shape by a dry etching method or the like.

  Next, as shown in FIG. 7C, a thickness of 0.5 to 7 μm made of a novolak resist or the like that is heated and cured by, for example, a photolithography method so as to cover the coil layer 343 and the heat generating layer 360. A coil insulating layer 344 and a heat insulating layer 361 are formed. Here, the heat insulating layer 361 may be omitted. Next, as shown in FIG. 7D, on the write gap layer 431, for example, by a frame plating method, for example, NiFe, CoFeNi, CoFe, FeN, FeZrN, etc., or a thickness made of a multilayer film made of these materials An upper magnetic pole 3450 and a back contact magnetic pole 3451 of about 0.5 to 3 μm are formed.

Next, as shown in FIG. 7E, for example, an insulating film such as Al ₂ O ₃ or SiO ₂ is formed by, for example, sputtering or the like, and is flattened by, for example, CMP to form the planarizing layer 48. . Next, as shown in FIG. 7F, an insulating layer 49 made of, for example, Al ₂ O ₃ , SiO ₂ or the like is formed by, for example, sputtering, CVD, or the like. Thereafter, the base is exposed through a resist mask pattern by, for example, a dry etching method such as a milling method or an RIE method, so that an upper magnetic pole-yoke junction 70, a back contact magnetic pole-yoke junction 71, and a coil lead-out are obtained. Part 72 is formed.

  Next, as shown in FIG. 8A, for example, by frame plating or the like, for example, NiFe, CoFeNi, CoFe, FeN, FeZrN, or the like or a multilayer film made of these materials has a thickness of about 0.5 to 3 μm. A yoke layer 3452 and a coil lead layer 80 are formed. However, the coil lead layer 80 may be separately formed from a material such as Cu by, for example, frame plating. Thereafter, trim milling or the like is performed in order to make the widths of the opposing surfaces of the upper magnetic pole 3450 and the lower magnetic pole layer 340 through the write gap layer 341 in the track width direction uniform. The upper magnetic pole 3450, the back contact magnetic pole 3451, and the yoke layer 3452 are formed by the above steps, whereby the formation of the upper magnetic pole layer 345 is completed.

Next, as shown in FIG. 8B, for example, an insulating film such as Al ₂ O ₃ or SiO ₂ is formed by, for example, sputtering or the like, and is flattened by, for example, CMP to form a flattened layer 81. . Next, as shown in FIG. 8C, a thickness of 0.1, for example, made of Al ₂ O ₃ , SiO ₂ , AlN, or DLC is formed on the planarized surface by, for example, sputtering or CVD. An insulating layer 82 having a thickness of about 0.5 μm is formed.

Next, the cavity 35 and the insulating layer 83 are formed by using a formation method that will be described in detail later with reference to FIG. 9 or FIG. 10, and then, for example, by sputtering, for example, Al ₂ O ₃ so as to cover them. Then, a coating layer 84 made of SiO ₂ or the like is formed.

  Next, the wafer substrate which is the slider substrate after the formation process is cut to form a bar member in which a plurality of magnetic head elements are arranged in a line. Next, MR height processing is performed to obtain a desired MR height by polishing the bar member. Thereafter, the bar member that has been subjected to MR height processing is cut and separated into individual sliders (thin film magnetic heads), thereby completing the manufacturing process of the thin film magnetic head.

  Although the manufacturing process of the thin film magnetic head for longitudinal magnetic recording shown in FIG. 4A has been described above, it is naturally possible to manufacture it with other formation conditions and modes. FIG. The thin film magnetic head for perpendicular magnetic recording shown in FIG. 5 can be manufactured in the same manner by applying or applying the above-described manufacturing method.

  Below, an example of the formation method of the cavity part 35 is demonstrated. The method for forming the cavity portion is slightly different depending on where the cavity portion is provided in the position shown in FIG. 5A. However, the cavity portion is sufficiently formed at any position on the basis of the following formation method. It is clear that it can be formed.

  FIG. 9 is a process diagram for explaining one aspect of the cavity forming process in the method of manufacturing a thin film magnetic head according to the present invention, and shows a cross section taken along line AA in FIG.

  First, as shown in FIG. 9A, a resist pattern 91 having a predetermined shape for obtaining a desired cavity shape is formed on a base layer 90 having a thickness of about 0.01 to 10 μm. . Here, the base layer 90 becomes the insulating layer 82 in FIG. 8C when the cavity 35 is provided at the position of FIG. Alternatively, for example, a slider substrate may be used as a base layer. The resist pattern 91 is formed by a known method in which a photoresist is applied and then exposed using a mask to transfer the mask pattern as a latent image, followed by development with a developer, washing with water, and drying. Is done. At this time, if necessary, the photoresist layer may be heated immediately after application and / or before development.

Next, as shown in FIG. 9B, an insulating film made of, for example, Al ₂ O ₃ , SiO _2, or the like is formed so as to cover the resist pattern 91 by, for example, sputtering or CVD. The thickness of this insulating layer is set to be equal to or greater than the thickness of the resist pattern 91. Further, if necessary, the resist pattern 91 may be heated before forming the insulating layer, or lightly cured using other heat, ultraviolet rays, electron beams, or the like. Thereafter, as shown in FIG. 9C, the surface of the insulating film is polished by, for example, CMP to expose the resist pattern 91. As a result, an insulating layer 92 that surrounds the cavity with its side surface is formed. The insulating layer 92 corresponds to the insulating layer 83 in FIG. Next, an insulating layer 93 made of, for example, Al ₂ O ₃ , SiO ₂ or the like is formed on the polished surface by, for example, sputtering or CVD (FIG. 9D). Here, the thickness of the insulating layer 93 is adjusted to such an extent that the subsequent etching of the same layer is satisfactorily performed.

  Next, as shown in FIG. 9E, a photoresist is applied to the insulating layer 93 and exposed, and the mask pattern is transferred to the photoresist as a latent image. Here, if necessary, the photoresist may be heated after coating. Thereafter, as shown in FIG. 9F, development with a developer, washing with water and drying are performed to form a resist pattern 94 having a predetermined shape. Here, if necessary, the photoresist may be heated before development.

Next, as shown in FIG. 9G, the insulating layer 93 is etched using the resist pattern 94 as a mask until the etching reaches the resist pattern 91 by, for example, a milling method or an RIE method. Thereafter, as shown in FIG. 9H, the resist patterns 91 and 94 are eluted and peeled off, for example, with an organic solvent such as acetone or NMP. Here, the resist pattern 94 may be peeled off by ashing or the like. Then, finally, as shown in FIG. 9I, an insulating layer 95 made of, for example, Al ₂ O ₃ , SiO ₂ or the like is formed by, for example, sputtering or CVD so as to cover the insulating layer 93. Thereby, formation of the cavity part 35 which has the sealed space 350 is completed.

Here, immediately before the insulating layer 95 is formed and sealed, the wafer substrate is set in a film forming chamber of a vacuum film forming apparatus such as a sputtering apparatus. Therefore, after sealing, the sealed space 350 has a pressure of about the back pressure (for example, 10 ⁻⁷ to 10 ⁻³ Pa) of the vacuum apparatus.

  In the above steps, instead of the resist pattern 91, a pattern made of a metal material such as Cu may be used. For example, a pattern made of Cu can be formed by frame plating or the like, and the process can proceed in the same manner. However, in this case, an acid is used as the solvent used for the elution shown in FIG.

  FIG. 10 is a process diagram for explaining another aspect of the cavity forming process in the method of manufacturing a thin film magnetic head according to the present invention, and shows a cross section taken along line AA in FIG.

  10A to 10G is characterized in that the thickness of the insulating film 92 'formed in FIG. 10B is smaller than the thickness of the resist pattern 91'. is there. At this time, the thickness of the insulating layer 92 ′ can be adjusted to such an extent that the subsequent etching of the same layer is satisfactorily performed. Therefore, in this embodiment, it is not necessary to perform subsequent polishing of the surface of the insulating film (step corresponding to FIG. 9C) and formation of a further insulating layer (step corresponding to FIG. 9D). That is, after the insulating film 92 'is formed in FIG. 10B, a photoresist coating process (FIG. 10C) is performed as it is to form a photoresist pattern 94' (FIG. 10D). Next, after etching the insulating film 92 '(FIG. 10E), the resist patterns 91' and 94 'are eluted and peeled off (FIG. 10F), and finally the insulating layer 95' is formed. By doing so (FIG. 10G), the cavity 35 'can be formed through the same steps as in FIGS. 9F to 9I.

  As a result, by using this aspect of the forming process, the number of steps for forming the cavity can be reduced. However, since the outermost surface after formation is not flattened as shown in FIG. 10G, it is not suitable for forming an element as it is.

In the cavity forming method described above, various contour shapes can be obtained by setting the shape of the resist pattern 91 in FIG. 9A or the resist pattern 91 ′ in FIG. 10A to a desired shape. The hollow part which has can be formed. Further, the thickness of the cavity can be set to an arbitrary value depending on the thickness of the resist pattern 91 or 91 'and the amount of polishing when the surface is polished thereafter. Furthermore, by applying or applying the above forming method, the cavity can be formed at a desired position in the vicinity of the magnetic head element or between the MR effect element and the electromagnetic coil element. Accordingly, by setting the shape, size, and position of the cavity to a desired form, the degree of absorption of thermal expansion of the magnetic head element is adjusted, and the effective distance d _M is appropriately controlled, so that the thermal asperity And troubles such as crashes can be avoided.

  Further, when the reinforcing column or the reinforcing wall shown in FIG. 5D is formed in the hollow portion, the reinforcing column is formed into the shape of the resist pattern 91 in FIG. 9A or the resist pattern 91 ′ in FIG. Alternatively, the negative shape of the reinforcing wall may be included. Accordingly, when the insulating film is formed subsequently, the negative column shape is filled with the insulating material, whereby the reinforcing pillar or the reinforcing wall is formed.

  Hereinafter, the effect of providing the cavity in the thin film magnetic head according to the present invention will be described with reference to examples.

(Conventional example, comparative example, and examples 1 and 2)
FIG. 11 is a characteristic diagram showing the amount of protrusion at the end of the magnetic head element and the end of the coating layer during a write operation in a conventional thin film magnetic head.

  Here, the conventional thin-film magnetic head used has neither a heating element nor a cavity. Further, the amount of protrusion was measured by measuring a change in the position of the head end face using a stylus type step gauge. The head end face is slightly recessed with respect to the ABS of the slider substrate. The protrusion amount was obtained by measuring the fluctuation amount of each head end face position with the initial recess position during non-operation being zero. Furthermore, the value of the flying height was a value obtained by converting this recess. In the following measurement results, the MR effect element end where the protrusion amount was measured is the position a which is the end of the MR multilayer in FIG. 11A, and the electromagnetic coil element end is the end of the upper magnetic pole. The position b was the end of the coating layer in the head end surface 300 and was a position c that was half the distance between the head end surface 301 and the upper end of the yoke.

When a write operation was performed in this thin film magnetic head, the projection amount distribution was as shown in FIG. That is, the protrusion amount at the MR effect element end was 5 nm, and the protrusion amount at the electromagnetic coil element end and the coating layer end was 10 nm. Therefore, when securing the effective distance d _M margin as e.g. 5nm of non-operating, in consideration of the electromagnetic coil device end and the covering layer end that protrudes most, the flying height is set to 15 nm.

  FIG. 12 is a plan view showing a configuration of a thin film magnetic head and a characteristic diagram showing a change in protrusion amount during a write operation and a heating element in a comparative example.

  In addition, the measurement of protrusion amount was performed similarly to the above-mentioned conventional example. Further, the positions of the MR effect element end, the electromagnetic coil element end, and the upper magnetic pole end at which the protrusion amount was measured were the same as those in FIG.

  According to FIG. 12A, in this comparative example, the heating element 1200 is provided on the side opposite to the head end surface 300 of the magnetic head element 32. The slider substrate, the magnetic head element, and the like have the same configuration and structure as the conventional example described above.

In such a thin film magnetic head, first, when the amount of protrusion at the time of writing operation was measured without operating the heating element 1200, the value in the above-described conventional thin film magnetic head without the heating element (FIG. 11 ( It was almost the same as B)). Next, when the heating element 1200 was operated to gradually increase the input power, the protrusion amount distribution was as shown in FIG. 12B when the input power was 200 mW. That is, the protrusion amount at the MR effect element end was 8 nm, the protrusion amount at the electromagnetic coil element end was 15 nm, and the protrusion amount at the coating layer end was 20 nm. Here, since the flying height is set to 15 nm as described above, the end of the coating layer comes into contact with the surface of the magnetic disk before the end of the electromagnetic coil element. That is, when the input power is adjusted so that the end of the coating layer is 15 nm just before the contact, the protrusion amount of the MR effect element end is 8 × (15/20) nm = 6 nm, and the protrusion amount of the electromagnetic coil element end is 15 × (15/20) nm = 11.25 nm, and the effective distance d _M can be close to 9 nm and 3.75 nm, respectively.

  FIG. 13 is a plan view showing the configuration of the thin-film magnetic head in Example 1 and a characteristic diagram showing changes in the protrusion amounts of the magnetic head element end and the coating layer end during the write operation.

  In addition, the measurement of protrusion amount was performed similarly to the above-mentioned conventional example. Further, the positions of the MR effect element end, the electromagnetic coil element end, and the upper magnetic pole end at which the protrusion amount was measured were the same as those in FIG.

According to FIG. 13A, in this embodiment, the cavity 1300 is provided on the side opposite to the head end surface 300 of the magnetic head element 32. That is, in the above-described comparative example, the cavity 1300 is provided at the position of the heating element 1200, and the heating element is replaced with the cavity. The slider substrate, the magnetic head element, and the like have the same configuration and structure as the conventional example described above. Here, the area occupied by the cavity was 60 × 20 μm ² , and the thickness of the cavity was 1 μm.

In such a thin film magnetic head, when the amount of protrusion at the time of writing operation was measured, the distribution of the amount of protrusion was as shown in FIG. That is, the protrusion amount at the MR effect element end was 2 nm, and the protrusion amount at the electromagnetic coil element end and the coating layer end was 5 nm. Thus, by providing the cavity 1300, a part of the thermal expansion of the electromagnetic coil element and the covering layer is absorbed, so that the protruding amount can be suppressed to a predetermined small value. Therefore, when 5 nm is ensured as the margin of the effective distance d _M during non-operation, as described above, the flying height is suppressed to 10 nm even if the most protruding electromagnetic coil element end and covering layer end are taken into consideration. It becomes possible. As a result, the effective distance d _M at the MR effect element end can be reduced to 8 nm as compared with the conventional 10 nm (FIG. 11B).

  FIG. 14 is a plan view showing the configuration of the thin-film magnetic head in Example 2, and a characteristic diagram showing changes in the protrusion amounts of the magnetic head element end and the coating layer end during the write operation and the heating element operation.

  In addition, the measurement of protrusion amount was performed similarly to the above-mentioned conventional example. Further, the positions of the MR effect element end, the electromagnetic coil element end, and the upper magnetic pole end at which the protrusion amount was measured were also the same as in FIG.

14A, in this embodiment, the heating element 1400 is provided on the side opposite to the head end surface 300 of the magnetic head element 32, and the cavity 1401 is provided on the magnetic head element 32. It is provided directly above. That is, in the above-described comparative example, a cavity is further added. The slider substrate, the magnetic head element, and the like have the same configuration and structure as the conventional example described above. Here, the area occupied by the cavity was 60 × 20 μm ² , and the thickness of the cavity was 1 μm, which was the same as in Example 1.

In such a thin film magnetic head, first, the amount of protrusion at the time of writing operation was measured without operating the heating element 1400. In this example, the value of the thin film magnetic head having a configuration in which the heating element is not provided is almost the same. It was the same. Next, when the heating element 1400 was operated to gradually increase the input power, the protrusion amount distribution was as shown in FIG. 14B when the input power was 200 mW. That is, the protrusion amount at the end of the MR effect element was 8 nm, the protrusion amount at the end of the electromagnetic coil element was 15 nm, and the protrusion amount at the end of the coating layer was 10 nm. In this way, by providing the cavity 1400, particularly a part of the thermal expansion of the coating layer is largely absorbed, so that it is possible to realize a good distribution of the projection amount that the coating layer end does not project most. . Here, since the flying height is set to 15 nm as described above, the effective distance d _M at the end of the coating layer is 5 nm, and a sufficient margin is secured. The protrusion amount at the MR effect element end is 8 × (15/15) nm = 8 nm, the protrusion amount at the electromagnetic coil element end is 15 × (15/15) nm = 15 nm, and the effective distance d _M is 0 nm and It can be as close as 7 nm.

Figure 15 is a conventional example, comparative example, and is a graph showing the distribution of effective distance d _M in Examples 1 and 2.

According to FIG. 15, it is clear that the effective distance d _M during the write operation in the first and second embodiments can be set to a smaller value than in the conventional example and the comparative example. In particular, in the second embodiment including the cavity and the heating element, the end of the magnetic head element (the end of the electromagnetic coil element) can be projected most, so that the effective distance d _M during the write operation is almost zero at the end. It is also possible to.

  In the thin film magnetic head including both the cavity and the heating element, the protrusion distribution can be adjusted depending on the positional relationship between the two. For example, the configuration of Example 2 can suppress the protrusion of the coating layer end to be relatively smaller than the configuration in which the cavity and the heating element are both provided on the side opposite to the head end surface of the magnetic head element.

  All the embodiments described above are illustrative of the present invention and are not intended to be limiting, and the present invention can be implemented in other various modifications and changes. Therefore, the scope of the present invention is defined only by the claims and their equivalents.

1 is a perspective view schematically showing a configuration of a main part in an embodiment of an HDD according to the present invention. 1 is a perspective view schematically showing an embodiment of an HGA according to the present invention. FIG. 3 is a perspective view schematically showing a thin film magnetic head mounted on a front end portion of an HGA in the embodiment of FIG. 2, and is a plan view schematically showing an embodiment of a magnetic head element. FIG. 3B shows a configuration of a main part of a thin film magnetic head including a magnetic head element for longitudinal magnetic recording and a thin film magnetic head including a magnetic head element for perpendicular magnetic recording as an embodiment of the magnetic head element of FIG. It is the sectional view on the AA line of FIG.3 (B). It is sectional drawing of the magnetic head element vicinity and the perspective view of a cavity part which show the various changes about the cavity part by this invention. It is process drawing explaining the manufacturing process of the thin film magnetic head in embodiment shown to FIG. 4 (A). It is process drawing explaining the manufacturing process of the thin film magnetic head in embodiment shown to FIG. 4 (A). It is process drawing explaining the manufacturing process of the thin film magnetic head in embodiment shown to FIG. 4 (A). FIG. 6 is a process diagram for explaining one aspect of a cavity forming process in the method of manufacturing a thin film magnetic head according to the present invention. It is process drawing for demonstrating the other aspect of the formation process of a cavity part in the manufacturing method of the thin film magnetic head by this invention. FIG. 10 is a characteristic diagram showing protrusion amounts of a magnetic head element end and a coating layer end during a write operation in a conventional thin film magnetic head. FIG. 6 is a plan view showing a configuration of a thin film magnetic head and a characteristic diagram showing a change in protrusion amount during a write operation and a heating element in a comparative example. FIG. 3 is a plan view showing the configuration of a thin film magnetic head and a characteristic diagram showing changes in protrusion amounts of a magnetic head element end and a coating layer end during a write operation in Example 1. FIG. 6 is a plan view showing a configuration of a thin film magnetic head in Example 2, and a characteristic diagram showing changes in protrusion amounts of a magnetic head element end and a covering layer end during a write operation and a heating element operation. Conventional Example, Comparative Example, and is a graph showing the distribution of effective distance d _M in Examples 1 and 2.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Magnetic disk 11 Spindle motor 12 Assembly carriage apparatus 13 Recording / reproducing circuit 14 Drive arm 15 Voice coil motor (VCM)
16 Pivot bearing shaft 17 HGA
20 Suspension 21 Thin-film magnetic head (slider)
210 Slider substrate 22 Load beam 23 Flexure 24 Base plate 25 Wiring member 30 Air bearing surface (ABS)
300, 301 Head end face 31 Element formation surface 32 Magnetic head element 33 MR effect element 330 Lower shield layer 331 Lower shield gap layer 332 MR laminate 333 Upper shield gap layer 334 Upper shield layer 34 Electromagnetic coil element 340 Lower magnetic pole layer 340 ′ Main Magnetic pole layer 340a, 340a ', 345a, 3450a' End 3400 'Main magnetic pole main layer 3401' Main magnetic pole auxiliary layer 341, 341 'Gap layer 343, 343' Coil layer 344, 344 'Coil insulation layer 345 Upper magnetic pole layer 3450 Upper Magnetic pole 3451 Back contact magnetic pole 3452 Yoke layer 345 'Auxiliary magnetic pole layer 3450' Trailing shield part 35, 35 ', 52, 53, 54, 55, 1300, 1401 Cavity part 36, 1200, 1400 Heating element 37 Signal Child electrode 38 Drive terminal electrode 40 Underlying insulating layer 41, 43, 46, 48, 81 Flattening layer 42 Refill flattening layer 44 Nonmagnetic layer 45 Thermal conduction layer 47 Back gap portion 49, 82, 83, 92, 92 ', 93, 95, 95 ′ Insulating layer 50 region 51 Symmetry surface 56 Sealed space 57 Reinforcement pillar 58 Reinforcement wall 70 Upper magnetic pole-yoke joint part 71 Back contact magnetic pole-yoke joint part 72 Coil lead part 80 Coil lead layer 84 Covering layer 85 Backing Coil portion 850 Backing coil layer 851 Backing coil insulating layer 86 Inter-element shield layer 90 Base layer 91, 91 ', 94, 94' Resist pattern

Claims (13)

  A thin film magnetic head comprising a substrate and a magnetic head element including at least one read magnetic head element and at least one write magnetic head element provided on the substrate, in the vicinity of the magnetic head element, or Between the at least one read magnetic head element and the at least one write magnetic head element, at least one cavity having a sealed space for absorbing a part of thermal expansion of the magnetic head element is provided. A thin film magnetic head characterized by   The thin film magnetic head according to claim 1, wherein at least one of the at least one cavity is located on a side opposite to the air bearing surface of the magnetic head element.   3. The thin film magnetic head according to claim 1, wherein at least one of the at least one cavity is located on a side opposite to the substrate of the magnetic head element.   4. The thin film magnetic head according to claim 1, wherein at least a part of the at least one cavity is provided in the substrate. 5.   The contour shape of the at least one cavity has a symmetry plane perpendicular to the air bearing surface, and the symmetry surface coincides with a symmetry surface perpendicular to the air bearing surface of the magnetic head element. Item 5. The thin film magnetic head according to any one of Items 1 to 4.   A plurality of the cavity portions are provided, and the plurality of cavity portions are arranged in plane-symmetric positions with a symmetry plane perpendicular to the air bearing surface of the magnetic head element as a symmetry plane. Item 6. The thin film magnetic head according to any one of Items 1 to 5.   The air pressure in the sealed space of the at least one cavity is approximately the back pressure of a vacuum film forming apparatus or less than 1 atm at a head driving temperature. Thin film magnetic head.   8. The thin film magnetic head according to claim 1, wherein the at least one hollow portion includes at least one reinforcing column or reinforcing wall inside thereof.   The covering portion is provided on the substrate so as to cover the magnetic head element, and at least one of the at least one cavity portion is formed in the covering portion. The thin film magnetic head according to any one of the above items.   10. The thin film magnetic head according to claim 9, wherein at least one of the at least one cavity has a sealed space for absorbing a part of thermal expansion of the covering.   11. The thin film magnetic head according to claim 1, wherein at least one heat generating unit is provided on the substrate.   12. The thin film magnetic head according to claim 1, further comprising: a signal line for the magnetic head element; and a support mechanism for supporting the thin film magnetic head. And head gimbal assembly.   13. A head gimbal assembly according to claim 12, comprising at least one head gimbal assembly, and recording / reproducing for controlling writing and reading operations performed by the thin film magnetic head on the at least one magnetic disk. And a circuit further comprising a circuit.

Images