JP2006339411A - Aligner - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an aligner capable of suppressing an affect of a leakage or the like of a liquid for exposure to satisfactorily conduct an exposure step. <P>SOLUTION: The aligner exposing a pattern to a wafer W by supplying a liquid to the wafer W held on a wafer table WTB comprises position detecting devices 42, 44 for detecting the position of the wafer table WTB by moving in concert with moving mirrors 41X, 41Y provided on the wafer table WTB, a light projecting part 61 and a light receiving part 62, and a detecting device 60 for detecting foreign substances attached to the moving mirrors 41X, 41Y without interposing an optical member at the position facing to the moving mirrors 41X, 41Y. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an exposure apparatus that exposes a substrate through a projection optical system and a liquid.

In a photolithography process that is one of the manufacturing processes of micro devices (semiconductor devices, liquid crystal display devices, and the like), an exposure apparatus that projects and exposes a pattern formed on a mask onto a photosensitive substrate is used. This exposure apparatus has a mask stage for supporting a mask and a substrate stage for supporting a substrate, and projects and exposes a mask pattern onto a substrate via a projection optical system while sequentially moving the mask stage and the substrate stage. It is.
In the manufacture of micro devices, miniaturization of patterns formed on a substrate is required in order to increase the density of devices. In order to meet this requirement, it is desired to further increase the resolution of the exposure apparatus. As one of means for realizing the higher resolution, a projection optical system as disclosed in Patent Document 1 below. An immersion exposure apparatus has been devised that performs an exposure process in a state where the space between the substrate and the substrate is filled with a liquid having a refractive index higher than that of gas.
International Publication No. 99/49504 Pamphlet

  By the way, in the immersion exposure apparatus, if the exposure liquid leaks out, the liquid may cause inconveniences such as failure of the apparatus / member, leakage, rust, and the like. In addition, if the leaked liquid adheres to a position measurement movable mirror installed on the side of the substrate stage, etc., an error occurs in the position measurement, making it impossible to position the substrate with high accuracy. It becomes. For this reason, there is a problem that exposure processing cannot be performed satisfactorily.

  The present invention has been made in view of such circumstances, and an object of the present invention is to provide an exposure apparatus that can suppress exposure of a liquid for exposure and the like and can perform exposure processing satisfactorily.

In order to solve the above-described problem, a description will be given in association with a drawing showing an embodiment. A liquid (Lq) is supplied to a substrate (W) held on a substrate table (WTB), and a pattern is exposed on the substrate. In the exposure apparatus (EX), a position detection device (42, 44) for detecting the position of the substrate table in cooperation with a movable mirror (41X, 41Y) provided on the substrate table, a light projecting unit (61), and light reception And a detection device (60) for detecting the foreign matter (Lq) attached to the movable mirror without interposing an optical member at a position facing the movable mirror.
According to the present invention, since no optical member is interposed at a position facing the moving mirror, it is possible to detect the foreign matter attached to the moving mirror without hindering the position detection of the substrate table by the position detecting device.

In the case where the detection device (60) detects the foreign matter (Lq) based on the change in the optical path length of the detection light (L1) emitted from the light projecting unit (61), the foreign matter is a liquid. However, since the optical path length changes when the detection light passes through the liquid, it can be reliably detected.
Further, in the case where the light projecting unit (61) emits the detection light (L1) along the direction orthogonal to the detection direction for detecting the position of the substrate table (WTB), By emitting the detection light along the longitudinal direction, it is possible to detect foreign matter such as liquid that flows down over the entire detection surface of the movable mirror.
In addition, when the light projecting unit (61) and the light receiving unit (62) are provided independently of the substrate table (WTB), the substrate table can be made cable-less and the weight can be prevented.
A so-called twin is provided with a table (MTB) different from the substrate table (WTB) and a second detection device (70) for detecting foreign matter on the movable mirrors (51X, 51Y) provided on the table. Even in the case of a stage, it is possible to detect foreign matter adhering to a movable mirror provided on each table.

In an exposure apparatus (EX) that supplies a liquid (Lq) to a substrate (W) held on a substrate table (WTB) to form a liquid immersion area (AR) on the substrate and exposes a pattern on the substrate, liquid immersion A light projecting unit (81) that emits detection light (L2) so as to surround the region is provided, and a detection device (80) that detects an abnormality outside the liquid immersion region is provided.
According to the present invention, liquid leaking from the liquid immersion area, that is, an abnormality outside the liquid immersion area can be reliably detected around the liquid immersion area.

In addition, when the light projecting unit (81) is provided independently of the substrate table (WTB), it is possible to realize a cable-less substrate table and prevent weight increase.
Further, in the case of including a control device (CONT) that stops the supply of the liquid (Lq) to the substrate (W) when the detection device (80) detects an abnormality, the leakage of the liquid from the liquid immersion region is minimized. To the limit.

Further, in the exposure apparatus (EX) that supplies the liquid (Lq) to the substrate (W) placed on the substrate stage (WTB) that moves on the base (21) and exposes the pattern on the substrate, A light projecting section (91) for emitting detection light (L3) is provided in the movement area of the substrate stage, and a detection device (90) for detecting foreign matter on the base is provided.
According to the present invention, it is possible to detect foreign matter such as liquid exposed in the movement area of the substrate stage on the base.
Further, in the base (21), a groove portion is formed, and when the light projecting portion (91) emits the detection light (L3) along the groove portion, the liquid flows into the groove portion, so that the liquid is surely supplied. It becomes possible to detect.

  In addition, in order to make this description easy to understand, the description has been made in association with the reference numerals in the drawings showing one embodiment, but it goes without saying that the present invention is not limited to the embodiment.

According to the present invention, the following effects can be obtained.
Foreign matter adhering to the movable mirror can be detected without hindering the position detection of the substrate table by the position detection device, so that the position measurement of the substrate table can be performed while positioning the substrate table with high accuracy. It is possible to monitor the presence or absence of foreign matter adhering to the movable mirror that may come.
Further, even if the foreign matter is a liquid, it can be reliably detected. Therefore, even if the liquid leaks from the liquid immersion area of the liquid immersion exposure apparatus, the liquid can be detected at a plurality of locations such as on the substrate table. By detecting it, it is possible to prevent the occurrence of a malfunction of the exposure apparatus due to the leakage of the liquid.

An exposure apparatus according to an embodiment of the present invention will be described below with reference to the drawings.
FIG. 1 is a side view showing a schematic configuration of an exposure apparatus according to an embodiment of the present invention.
The exposure apparatus EX performs step-and-scan that sequentially transfers a pattern formed on the reticle R onto the wafer W via the projection unit PU while relatively moving the reticle R as a mask and the wafer W as a substrate. This is a scanning exposure type exposure apparatus.
In the following description, the direction that coincides with the optical axis AX of the projection unit PU is the Z-axis direction, and the synchronous movement direction (scanning direction) of the reticle R and the wafer W is within the plane perpendicular to the Z-axis direction. A direction (non-scanning direction) perpendicular to the Z-axis direction and the Y-axis direction is defined as a Y-axis direction. In addition, the rotation (inclination) directions around the X axis, the Y axis, and the Z axis are the θx, θy, and θz directions, respectively.

The exposure apparatus EX performs overall control of the illumination optical system ILS, the reticle stage RST that holds the reticle R, the projection unit PU, the stage apparatus ST that has the wafer stage WST that holds the wafer W, and the measurement stage MST, and these. It includes a control device CONT.
The exposure apparatus EX is an immersion exposure apparatus to which an immersion method is applied in order to improve the resolution by substantially shortening the exposure wavelength and substantially increase the depth of focus. Is provided with a liquid immersion device 17 for forming a liquid immersion area AR.
Further, the exposure apparatus EX detects the liquid leaked from the liquid immersion area AR formed by the liquid immersion apparatus 17, and the liquid leak detection apparatuses 60, 70, 80, 90 (in FIG. 1, the liquid leak detection apparatus 80 , 90 are not shown).

  The illumination optical system ILS illuminates a slit-shaped illumination area on the reticle R defined by a reticle blind (not shown) with exposure light EL with a substantially uniform illuminance. Here, as the exposure light EL, for example, ArF excimer laser light (wavelength 193 nm) is used.

On reticle stage RST, reticle R on which a predetermined pattern is formed is held, for example, by vacuum suction.
The reticle stage RST can be finely driven in an XY plane perpendicular to the optical axis AX of the illumination optical system ILS by a reticle stage driving unit 11 including a linear motor, for example, and scanning designated in the scanning direction (Y direction). It can be driven at speed.
The position of reticle stage RST in the stage moving plane (including rotation around Z axis) is moved by reticle interferometer 12 to moving mirror 13 (actually, the Y moving mirror having a reflecting surface orthogonal to the Y axis and the X axis). And an X-moving mirror having a reflecting surface orthogonal to each other) is always detected with a resolution of, for example, about 0.5 to 1 nm.
The measurement value of the reticle interferometer 12 is output to the control device CONT, and the control device CONT calculates the position of the reticle stage RST in the X direction, the Y direction, and the θz direction based on the measurement value of the reticle interferometer 12. In addition, the position and speed of the reticle stage RST are controlled by controlling the reticle stage drive unit 11 based on the calculation result.

The projection unit PU is configured to include a lens barrel 15 and a projection optical system PL including a plurality of optical elements held in the lens barrel 15 in a predetermined positional relationship. As the projection optical system PL, for example, a refractive optical system including a plurality of lenses having a common optical axis AX in the Z direction is used.
Although not shown in the drawings, among the plurality of lenses constituting the projection optical system PL, the specific plurality of lenses are controlled in position based on a command from the control device CONT. It is possible to adjust optical characteristics (including imaging characteristics) of the projection optical system PL, such as magnification, distortion, coma aberration, and field curvature (including image plane tilt).

The stage device ST is, for example, a frame caster FC arranged on the floor FL of a semiconductor factory, a base board 21 provided on the frame caster FC, and arranged above the base board 21 along the upper surface 21a of the base board 21. Wafer stage WST and measurement stage MST, interferometer systems 22 and 23 for detecting the positions of these stages WST and MST, and stage drive systems 24 and 25 for driving the stages WST and MST (see FIG. 2). Consists of.
Wafer stage WST holds and moves wafer W in order to expose and transfer the pattern of reticle R onto wafer W. On the other hand, the measurement stage MST is located under the projection optical system PL and performs various measurements while the wafer stage WST is positioned at the loading position for exchanging the wafer W.
The detailed configuration of the stage apparatus ST will be described later.

The liquid immersion device 17 forms a liquid immersion area AR by supplying and recovering liquid on the wafer W, and is the lens GL closest to the image plane (wafer W side) constituting the projection optical system PL. (Hereinafter also referred to as a tip ball). The liquid immersion device 17 includes a liquid supply device 19a and a liquid recovery device 19b. A liquid supply nozzle 18a is connected to the liquid supply device 19a, and a liquid recovery nozzle 18b is connected to the liquid recovery device 19b. Yes.
Here, as the liquid, ultrapure water (hereinafter simply referred to as “water Lq” unless otherwise required) through which ArF excimer laser light (light having a wavelength of 193 nm) passes is used. Ultrapure water has an advantage that it can be easily obtained in large quantities at a semiconductor manufacturing factory or the like, and does not adversely affect the photoresist and optical lenses applied on the wafer W. The refractive index n of the water Lq is approximately 1.44. In this water Lq, the wavelength of the exposure light EL is shortened to 193 nm × 1 / n = about 134 nm.

The liquid supply device 19a supplies water Lq between the front lens GL and the wafer W via the liquid supply nozzle 18a in response to an instruction from the control device CONT. In addition, the liquid recovery device 19b recovers water Lq into the liquid recovery device 19b from between the front lens GL and the wafer W via the liquid recovery nozzle 18b in response to an instruction from the control device CONT. At this time, the control device CONT always makes the amount of water Lq supplied from the liquid supply nozzle 18a between the front lens GL and the wafer W equal to the amount of water Lq recovered through the liquid recovery nozzle 18b. In this manner, a command is given to the liquid supply device 19a and the liquid recovery device 19b.
Thereby, a fixed amount of water Lq is held between the leading ball GL and the wafer W, and the liquid immersion area AR is formed. It should be noted that the water Lq in the immersion area AR is always replaced.
As described above, the liquid immersion device 17 is a local liquid immersion device that includes the liquid supply device 19a, the liquid recovery device 19b, the liquid supply nozzle 18a, the liquid recovery nozzle 18b, and the like.

The holding member that holds the projection unit PU is provided with an off-axis alignment system 45. Alignment system 45 measures the positions of alignment marks formed on wafer W on wafer stage WST and reference marks formed on reference plate 53 (see FIG. 2) on measurement stage MST.
The alignment system 45 irradiates the target mark with a broadband detection light beam that does not sensitize the resist on the wafer W, and the target mark image formed on the light receiving surface by reflected light from the target mark and an index (not shown) An image processing type FIA (Field Image Alignment) system that captures an image of an index pattern on an index plate provided in the alignment system 45 using an image sensor (CCD or the like) and outputs the image signals. It is an alignment sensor. The imaging signal from the alignment system 45 is supplied to the control device CONT.

The liquid leak detection devices 60 and 70 detect the water Lq leaked from the liquid immersion area AR formed by the liquid immersion device 17 by projecting detection light along the side surfaces of the wafer stage WST and the measurement stage MST. is there. The detection light projected from the liquid leakage detection devices 60 and 70 changes the optical path length when it touches the water Lq leaked from the liquid immersion area AR, so the presence of the water Lq is detected based on the change in the optical path length. To do.
Further, a liquid leakage detection device 80 is provided around the liquid immersion area AR, and a liquid leakage detection device 90 is further provided on the base board 21 of the stage device ST (see FIG. 4).
The detailed configuration of these liquid leakage detection devices 60, 70, 80, 90 will be described later.

Next, the configuration of the stage apparatus ST will be described in detail.
FIG. 2 is a perspective view showing the configuration of the stage apparatus ST.
The frame caster FC has a substantially flat plate shape in which protrusions FCa and FCb protruding upward with the Y direction as a longitudinal direction are integrally formed in the vicinity of the ends of one side and the other side in the X direction.
The base board 21 is disposed on a region sandwiched between the protrusions FCa and FCb of the frame caster FC. The upper surface 21a of the base board 21 is finished with extremely high flatness, and serves as a guide surface when the wafer stage WST and the measurement stage MST are moved along the XY plane.

Wafer stage WST includes a wafer stage main body 26 disposed on base board 21 and a wafer table WTB mounted on wafer stage main body 26. The wafer stage main body 26 is configured by a hollow member having a rectangular cross section and extending in the X direction.
A self-weight canceller mechanism (not shown) is provided on the lower surface of the wafer stage body 26. The self-weight canceller mechanism includes a support portion that supports the wafer stage WST using compressed air, and an air bearing portion that faces the upper surface 21a as a guide surface and causes the wafer stage WST to float with respect to the upper surface 21a. . By this air bearing portion, the wafer stage body 26 is supported on the base board 21 with a predetermined gap.
Wafer stage WST drives wafer stage main body 26 in the X direction with a long stroke, and also includes first drive system 27 for finely driving in Y direction, Z direction, θx, θy, and θz, wafer stage main body 26 and second stage. Second drive systems 28a and 28b for driving one drive system 27 with a long stroke in the Y direction are provided.
Furthermore, wafer stage WST includes a tube carrier 29 that moves at a constant speed in the X direction, and a 6-degree-of-freedom pipe (not shown) that transmits a use force such as vacuum or air from tube carrier 29 to wafer stage body 26 in a non-contact manner. ing. The reason why the tube carrier 29 moves at a constant speed in the X direction is to reduce the influence of the reaction force generated by driving the tube carrier 29 on the wafer stage main body 26.

Three openings are formed on each of the side surface on the + X side and the side surface on the −X side of the wafer stage main body 26. A Y-axis stator 33 having a plurality of coils is provided so as to penetrate the wafer stage main body 26 through an opening formed in a substantially central portion of each side surface of these openings. Of the three openings formed on each side surface, the wafer stage main body 26 is moved through each of the two openings formed so as to sandwich the opening through which the Y-axis stator 33 passes in the Y direction. Two X-axis stators 34a and 34b are provided so as to penetrate.
Furthermore, a permanent magnet is provided in each of the three openings described above.
The Y-axis stator 33 finely drives the wafer stage main body 26 in the Y direction in cooperation with a permanent magnet (not shown) provided in an opening through which the Y-axis stator 33 passes. The two X-axis stators 34a, 34b drive the wafer stage main body 26 with a long stroke in the X direction in cooperation with permanent magnets (not shown) provided in the openings therethrough. The wafer stage main body 26 can be rotated in the θz direction by varying the drive amounts of the X-axis stators 34a and 34b.
That is, the first drive system 27 includes a moving magnet type linear motor composed of X axis stators 34a, 34b and permanent magnets, and a moving magnet type linear motor composed of X axis stators 34a, 34b and permanent magnets. And a motor.
Here, a case where a moving magnet type linear motor is provided will be described as an example, but a moving coil type linear motor may be provided.

  Further, below the wafer stage main body 26, two Z-axis stators extending in the X direction and permanent magnets (both not shown) corresponding to these are provided. By individually controlling the drive amount of each Z-axis stator, the wafer stage main body 26 can be driven in the Z direction, θx, and θy directions. A stator 37 extending in the X direction is also provided to drive the tube carrier 29 in the X direction. The Y-axis stator 33, the X-axis stators 34a and 34b, the Z-axis stator, and the stator 37 are respectively connected to the movable elements 39a and 39b that constitute the second drive systems 28a and 28b. Each is fixed.

  Above the protrusions FCa and FCb of the frame caster FC, Y-axis stators 38a and 38b extending in the Y direction and constituting the second drive systems 28a and 28b are respectively disposed. These Y-axis stators 38a and 38b are levitated and supported above the protrusions FCa and FCb via a predetermined clearance by a static gas bearing (not shown) provided on each lower surface, for example, an air bearing. Yes. This is because the stator 38a, 38b moves in the opposite direction as the Y counter mass in the Y direction due to the reaction force generated by the movement of the wafer stage WST and the measurement stage MST in the Y direction, and this reaction force is the law of conservation of momentum. This is to cancel out.

Between these stators 38a and 38b, the wafer stage main body 26 and the like are disposed. Each of the Y-axis stator 33, the X-axis stators 34a and 34b, the Z-axis stator, and the stator 37 is provided. Movable elements 39a and 39b fixed at both ends are inserted from the inside of the stators 38a and 38b, respectively. The stators 38a and 38b are provided with permanent magnets (not shown) arranged along the Y direction, and the movers 39a and 39b are provided with coils (not shown) arranged along the Y direction. That is, the second drive systems 28a and 28b are provided with moving coil type linear motors that drive wafer stage WST in the Y direction.
Here, the case where a moving coil type linear motor is provided will be described as an example, but a moving magnet type linear motor may be provided.

  A wafer holder (not shown) that holds the wafer W is provided on the wafer table WTB. The wafer holder includes a plate-shaped main body and an auxiliary plate 40 having liquid repellency (water repellency) fixed to the upper surface of the main body and having a circular opening larger than the diameter of the wafer W at the center thereof. Yes. A large number of pins are arranged in the region of the main body inside the circular opening of the auxiliary plate 40, and the wafer W is vacuum-sucked while being supported by the large number of pins. In this case, when the wafer W is vacuum-sucked, the surface of the wafer W and the surface of the auxiliary plate 40 are formed to have substantially the same height (see FIG. 1). Note that liquid repellency may be imparted to the surface of wafer table WTB without providing auxiliary plate 40.

In addition, a reflection surface 41X orthogonal to the X direction (extending in the Y direction) is formed at one end in the X direction (+ X side end) of the wafer table WTB by mirror finishing, and one end in the Y direction (+ Y side) At the end, a reflection surface 41Y orthogonal to the Y direction (extending in the X direction) is similarly formed by mirror finishing. Interferometer beams from the X-axis interferometer 42 and the Y-axis interferometer 44 constituting the interferometer system 22 are respectively projected onto the reflecting surfaces 41X and 41Y.
The X-axis interferometer 42 and the Y-axis interferometer 44 shown in FIG. 2 are collectively shown as the interferometer system 22 in FIG.
Then, the X-axis interferometer 42 and the Y-axis interferometer 44 receive the reflected light from the reflecting surfaces 41X and 41Y, respectively, thereby detecting the displacement of the reflecting surfaces 41X and 41Y in the measurement direction from the reference position.

The X-axis interferometer 42 measures the measurement axis parallel to the X axis passing through the projection center (optical axis AX, see FIG. 1) of the projection optical system PL, and passing through the measurement visual field center of the alignment system 45 and parallel to the X axis. The position of the wafer table WTB in the X direction is detected by a length measuring axis that passes through the projection center position of the projection optical system PL during exposure, and the alignment system 45 during enhanced global alignment (EGA). The position in the X direction of the wafer table WTB is measured with a length measuring axis passing through the center of the measurement visual field. Further, the X-axis interferometer 42 measures the position of the measurement table MTB in the X direction by appropriately using two measurement axes according to the measurement of the baseline amount and the measurement contents of various measuring instruments provided in the measurement stage MST. To do.
That is, the X-axis interferometer 42 can measure the position in the X direction of the wafer table WTB or the measurement table MTB at each of the projection center position and the alignment center position in the Y direction.

  Measurement stage MST has substantially the same configuration as wafer stage WST except for tube carrier 29 and a six-degree-of-freedom pipe (not shown). That is, as shown in FIG. 2, a measurement stage main body 46 disposed on the base board 21 and a measurement table MTB mounted on the measurement stage main body 46 are provided. In addition, the measurement stage main body 46 is driven with a long stroke in the X direction, and the first drive system 47 that finely drives in the Y direction, Z direction, θx, θy, and θz, and the measurement stage main body 46 and the first drive system 47 are provided. Second drive systems 48a and 48b that drive in the Y direction with a long stroke are provided. The measurement stage main body 46 is configured by a hollow member having a rectangular frame shape extending in the X direction.

Similarly to the first drive system 27 provided for the wafer stage WST, the first drive system 47 is a pair arranged at each of the three openings provided on the end surface in the ± X direction of the measurement stage main body 46. A permanent magnet formed, and one Y-axis stator and two X-axis stators each including a plurality of coils so as to penetrate the measurement stage main body 46 in the X direction through each of the openings. .
These permanent magnets, the X-axis stator and the Y-axis stator drive the measurement stage main body 46 with a long stroke in the X direction, slightly drive it in the Y direction, and further rotate it in the θz direction. The first drive system 47 includes a permanent magnet (not shown) provided on the lower surface of the measurement stage main body 46 and a Z-axis stator (not shown) that generates thrust in cooperation with these permanent magnets. ing. The measurement stage main body 46 can be driven in the Z direction, θx, and θy directions by these permanent magnets and the Z-axis stator.
Here, the case where the first drive system 47 includes a moving magnet type linear motor will be described as an example. However, the first drive system 47 may include a moving coil type linear motor.

The second drive systems 48a and 48b are arranged below the stators 38a and 38b, the X-axis stator and the Y-axis stator that penetrate the measurement stage main body 46 in the X direction, and the measurement stage main body 46 (−Z direction). The movable elements 49a and 49b are fixed to both ends of the Z-axis stator that is arranged, and the movable elements 49a and 49b are inserted from the inner sides of the stators 38a and 38b, respectively. The movers 49a and 49b are provided with coils (not shown) arranged along the Y direction, and cooperate with stators 38a and 38b provided with permanent magnets (not shown) arranged along the Y direction. A thrust in the Y direction is generated. That is, the second drive systems 48a and 48b include moving coil type linear motors that drive the measurement stage MST in the Y direction.
As described above, in this embodiment, the stators 38a and 38b are shared by the linear motor that drives the wafer stage WST in the Y direction and the linear motor that drives the measurement stage MST in the Y direction.
Here, the case where a moving coil type linear motor is provided will be described as an example, but a moving magnet type linear motor may be provided.

Thus, the stage drive system 24 is comprised by the 1st drive system 27 and the 2nd drive systems 28a and 28b which drive the wafer stage WST. The stage drive system 25 is configured by the first drive system 47 and the second drive systems 48a and 48b that drive the measurement stage MST.
Various drive systems constituting the stage drive systems 24 and 25 are controlled by the control device CONT. That is, the control device CONT controls, for example, the movement of the measurement stage MST before exposure of the wafer W and the movement of the wafer stage WST during exposure via the stage drive systems 24 and 25. Specifically, during the exposure process for wafer W on wafer stage WST, the position of measurement stage MST is fixed, and measurement using various measuring instruments provided on measurement stage MST is performed. During this, control is performed to fix the position of wafer stage WST.

The measurement table MTB is made of a low thermal expansion material, and its upper surface has liquid repellency (water repellency). The measurement table MTB is held on the measurement stage main body 46 by, for example, vacuum suction, and is configured to be exchangeable. The height of the surface of measurement table MTB is set to be substantially the same as the height of the surface of the wafer holder provided on wafer table WTB. When the measurement stage MST is positioned below the projection unit PU, it is possible to fill the water Lq between the measurement table MTB and the front lens GL as in the case of the wafer stage WST.
Further, the measurement stage MST includes a measuring instrument group (not shown) for performing various measurements related to exposure. Examples of the measuring instrument group include an aerial image measuring device, a wavefront aberration measuring device, and an exposure detecting device. The aerial image measuring apparatus measures an aerial image projected on the measurement table MTB via the water Lq by the projection optical system PL.
At a predetermined position on the upper surface of the measurement table MTB, a reference plate 53 is provided as a measurement pattern portion on which various marks used in these measuring instrument groups or the alignment system 45 are formed. The reference plate 53 is made of a low thermal expansion material, and the upper surface has liquid repellency (water repellency), and is configured to be replaceable with respect to the measurement table MTB.

At one end (+ X side end) of the measurement table MTB in the X direction, a reflecting surface 51X orthogonal to the X direction (extending in the Y direction) is formed by mirror finishing, and one end (−Y) in the Y direction is formed. On the side end, a reflecting surface 51Y orthogonal to the Y direction (extending in the X direction) is similarly formed by mirror finishing.
Interferometer beams from the X-axis interferometer 42 and the Y-axis interferometer 52 constituting the interferometer system 23 are projected onto the reflecting surfaces 51X and 51Y, respectively. Then, the X-axis interferometer 42 and the Y-axis interferometer 52 receive the reflected light from the reflecting surfaces 51X and 51Y, respectively, thereby detecting the displacement of the reflecting surfaces 51X and 51Y in the measurement direction from the reference position.
The X-axis interferometer 42 and the Y-axis interferometer 52 shown in FIG. 2 are collectively shown as the interferometer system 23 in FIG.
Similarly to the Y-axis interferometer 44, the Y-axis interferometer 52 has a measurement axis parallel to the Y-axis that connects the projection center (optical axis AX) of the projection optical system PL and the measurement field center of the alignment system 45. The position of the measurement table MTB in the Y direction is detected except when the wafer stage WST is in the loading position for exchanging the wafer W.

FIG. 3 is a schematic diagram illustrating the configuration of the liquid leakage detection devices 60 and 70.
Liquid leak detection device 60 detects water Lq leaked from liquid immersion area AR formed on wafer stage WST on the side surface of wafer stage WST, particularly on reflecting surfaces 41X and 41Y.
As shown in FIG. 3A, the liquid leakage detection device 60 reflects the detection light L1 projected from the light projector 61, the light receiver 62 that receives the detection light L1, the light receiver 61 that receives the detection light L1, and the detection light L1. It comprises a plurality of reflecting mirrors 64, 65, and 66. The light projector 61 and the light receiver 62 may be configured separately, or the light projector 61 and the light receiver 62 may be configured integrally. In this embodiment, the case where it comprises integrally is demonstrated.
As the projector 61 and the light receiver 62, for example, an interferometer similar to the interferometer systems 22 and 23 can be used. The interferometer projects the laser beam toward the measurement object and receives the reflected light. Based on the change in the optical path length between the projected laser beam and the received laser beam, the interferometer The position is measured with high resolution and accuracy. For this reason, it is impossible to measure the position of the water Lq that transmits light. However, since the wavelength (optical path length) of the detection light L1 (laser light) changes in the water Lq, the presence of a foreign substance, that is, the water Lq is confirmed by detecting the change in the optical path length. Can do.

The light projector 61 and the light receiver 62 are installed at a location separated from the wafer stage WST. The reflecting mirror 64 is fixed to the movable element 39b of the second drive system 28b, and reflects the detection light L1 projected from the projector 61 along the reflecting surface 41Y of the wafer table WTB. Reflection mirror 65 is fixed at a corner where reflection surfaces 41X and 41Y of wafer table WTB intersect, and reflects detection light L1 traveling along reflection surface 41Y along reflection surface 41X. The reflecting mirror 66 is fixed to the −Y end portion of the reflecting surface 41X, and reflects the detection light L1 traveling along the reflecting surface 41X again along the reflecting surface 41X.
As a result, as shown in FIG. 3A, the detection light L1 from the light projector 61 installed outside the wafer stage WST travels along the surfaces of the reflection surfaces 41X and 41Y, and thereafter is received by the light receiver 62. Received light. Since the reflecting mirror 64 is fixed to the movable element 39b of the second drive system 28b, even if the wafer stage WST moves in the X direction and the Y direction, the detection light L1 is transmitted along the reflecting surfaces 41X and 41Y. Can continue running.
The shape of the detection light L1 may be linear or strip-shaped. A plurality of detection lights in parallel may be used.

Further, as shown in FIG. 3B, the detection light L1 from the projector 61 is slightly along the reflecting surfaces 41X and 41Y formed on the side surface of the wafer stage WST and slightly from the surfaces of the reflecting surfaces 41X and 41Y. Drive away. Specifically, the vehicle travels at a position about 0.2 mm away from the surfaces of the reflection surfaces 41X and 41Y.
Thus, since the detection light L1 is arranged at a position slightly separated from the reflection surfaces 41X and 41Y, the water Lq leaked from the liquid immersion area AR crosses the detection light L1 when flowing down the reflection surfaces 41X and 41Y. The light receiver 62 detects the change in the optical path length of the detection light L1, and the presence of the water Lq is confirmed. In particular, since the detection light L1 is projected from the light projector 61 and received by the light receiver 62, it is not necessary to arrange other optical members on the reflection surfaces 41X and 41Y. For this reason, the water Lq can be detected without adversely affecting the position measurement by the X-axis interferometer 42 and the Y-axis interferometer 44 (interferometer system 22).

Further, it is preferable that the detection light L1 travel in the + Z direction rather than the irradiation position of the interferometer beam from the X-axis interferometer 42 and the Y-axis interferometer 44 on the reflection surfaces 41X and 41Y. Water Lq leaked from the immersion area AR flows down the reflection surfaces 41X and 41Y and is detected by the detection light L1 before reaching the irradiation position of the interferometer beam from the X-axis interferometer 42 and the Y-axis interferometer 44. It is. That is, when the water Lq reaches the interferometer beam irradiation position on the reflecting surfaces 41X and 41Y, the interferometer beam touches the water Lq, and an error occurs in the position measurement of the wafer stage WST. Before it occurs, water Lq is detected.
Then, the detection result of the light receiver 62 is sent to the control device CONT, and the control device CONT performs a predetermined process based on the detection result.

As shown in FIG. 3, the liquid leakage detection device 70 is disposed on the measurement table MTB. The liquid leakage detection device 70 detects water Lq flowing down the reflection surfaces 51X and 51Y of the measurement table MTB, and includes a projector 71 that projects the detection light L1, a light receiver 72 that receives the detection light L1, and a projector. The plurality of reflecting mirrors 74, 75, and 76 reflect the detection light L <b> 1 projected from 71.
The liquid leakage detection device 70 disposed on the measurement table MTB has the same configuration and the same function as the liquid leakage detection device 60 disposed on the wafer table WTB, and thus the description thereof is omitted.

FIG. 4 is a schematic diagram showing the configuration of the liquid leakage detection devices 80 and 90. In FIG. 4, the measurement stage MST and the like are omitted for easy understanding.
The liquid leakage detection device 80 leaks water Lq from the liquid immersion area AR formed on the wafer table WTB or the measurement table MTB around the liquid immersion area AR formed on the wafer table WTB or the measurement table MTB. , To detect.
The liquid leakage detection device 80 includes four sets of a projector 81 and a light receiver 82. The four sets of light projectors 81 and light receivers 82 have the same performance and function.
As shown in FIG. 4A, the detection light L2 projected from the four projectors 81 travels so as to surround the liquid immersion area AR formed on the wafer table WTB or the measurement table MTB. Further, as shown in FIG. 4B, each detection light L2 travels at a position about 0.2 mm away from the upper surface of wafer table WTB or measurement table MTB.
Since the immersion area AR is located below the projection optical system PL, even if the wafer table WTB or the measurement table MTB is moved in the X direction or the Y direction, the position is not changed. For this reason, the four sets of light projectors 81 and light receivers 82 are fixed to the base board 21, and the detection light L2 from each light projector 81 is directly received by each light receiver 82 without using a reflecting mirror. It has become so.
When the water Lq leaks from the liquid immersion area AR, the wavelength (optical path length) of the detection light L2 changes as in the liquid leakage detection devices 60 and 70, and the change in the optical path length is caused by each projector 81. Detected. Then, the detection result of each projector 81 is sent to the control device CONT.

When the water Lq leaked from the liquid immersion area AR formed on the wafer table WTB or the measurement table MTB flows down to the base board 21, the liquid leak detection device 90 detects the water Lq.
Similar to the liquid leak detection device 80, the liquid leak detection device 90 includes four sets of a projector 91 and a light receiver 92. The four sets of the projector 91 and the light receiver 92 have the same performance and function.
As shown in FIG. 4A, the detection light L3 projected from the four projectors 91 faces the position of the projection optical system PL on the base board 21 located below the projection optical system PL. Arranged to surround the area. Moreover, each detection light L3 is arrange | positioned in the position about 0.2 mm away from the upper surface of the base board 21, as shown in FIG.4 (b).
The area surrounded by the four detection lights L3 has a larger area than the outer shape (outer shape in the X and Y directions) on the wafer table WTB or the measurement table MTB. This is because when the water Lq leaked from the liquid immersion area AR formed on the wafer table WTB or the measurement table MTB flows down on the base board 21, it is detected before flowing down from the water Lq base board 21.
The four sets of light projectors 91 and light receivers 92 are fixed with respect to the base board 21, and the detection light L3 from each light projector 91 is directly received by the light receiver 93 without using a reflecting mirror. ing.
Then, when water Lq leaks from the liquid immersion area AR, the wavelength (optical path length) of the detection light L3 changes, and the change in the optical path length is detected by each projector 91, as in the liquid leakage detection device 60 and the like. Is done. Then, the detection result of each projector 91 is sent to the control device CONT.

Next, a method for exposing the image of the pattern of the reticle R onto the wafer W using the above-described exposure apparatus EX will be described.
First, reticle R is loaded onto reticle stage RST, and wafer W is loaded onto wafer stage WST.
Next, the control device CONT drives the liquid supply device 19a and starts the liquid supply operation. The flow rate of the water Lq is constant and is, for example, about 0.3 to 0.7 L / min. Thus, the water Lq is supplied onto the wafer W from the liquid supply nozzle 18a.
At the same time, the liquid recovery apparatus 19b is driven, and the recovery operation of the water Lq supplied onto the wafer W is started. In this way, the liquid immersion area AR is formed between the projection optical system PL and the wafer W.

When the immersion area AR is formed, the control unit CONT monitors the measurement value of the interferometer system 22 based on the alignment result measured in advance, and the first shot area (first shot area) of the wafer W ) Wafer stage WST is moved to the acceleration start position (scanning start position) for exposure.
Next, the control device CONT starts scanning the reticle stage RST and the wafer stage WST in the X-axis direction. When the reticle stage RST and the wafer stage WST reach their respective target scanning speeds, the exposure irradiated from the illumination optical system ILS is performed. The pattern area of the reticle R is irradiated with the light EL, and scanning exposure is started.
Then, different areas of the pattern area of the reticle R are sequentially illuminated with the exposure light EL, and the illumination of the entire pattern area is completed, thereby completing the scanning exposure for the first shot area on the wafer W. Thereby, the pattern of the reticle R is reduced and transferred to the resist layer in the first shot area on the wafer W through the projection optical system PL and the liquid immersion area AR (water Lq).
When the scanning exposure for the first shot area is completed, the control unit CONT moves the wafer stage WST stepwise in the X and Y axis directions and moves to the acceleration start position for exposure of the second shot area. That is, an inter-shot stepping operation is performed. Then, the above-described scanning exposure is performed on the second shot area.
In this way, the scanning exposure of the shot area of the wafer W and the stepping operation for exposure of the next shot area are repeated, and the pattern of the reticle R is sequentially transferred to all the exposure target shot areas on the wafer W. .

When the exposure processing of the wafer W is completed, the controller CONT retracts the wafer stage WST from directly below the projection optical system PL, and moves the measurement stage MST to just below the projection optical system PL. At this time, water Lq in liquid immersion area AR is transferred from wafer stage WST to measurement stage MST with wafer stage WST and measurement stage MST approaching or in contact with each other. That is, the water Lq supply operation by the liquid supply device 19a and the water Lq recovery operation by the liquid recovery device 19b are maintained.
Alternatively, the supply operation of the water Lq by the liquid supply device 19a may be stopped, the water Lq in the liquid immersion area AR may be collected, and then the wafer stage WST and the measurement stage MST may be moved.
Then, wafer W placed on wafer stage WST is unloaded by a wafer loader (not shown), and a new wafer W is loaded again on wafer stage WST.
By repeating such a process, a plurality of wafers W are exposed.

As described above, the exposure process through the water Lq in the liquid immersion area AR is performed. In this exposure process, the water Lq may leak from the liquid immersion area AR. For example, the water Lq leaks from the immersion area AR as the wafer stage WST and the measurement stage MST move, and the supply amount and recovery amount of the water Lq by the liquid supply device 19a and the liquid recovery device 19b change.
However, in the present embodiment, the water Lq leaked from the liquid immersion area AR is constantly monitored and detected by the liquid leak detection devices 60, 70, 80 and 90.
That is, when a change in the optical path length of the detection light L2 is detected in the liquid leakage detection device 80, it is determined that the water Lq has leaked from the liquid immersion area AR. Further, when a change in the optical path length of the detection light L is detected in the liquid leakage detection devices 60 and 70, the water Lq leaks from the wafer table WTB or the measurement table MTB, and the reflection surfaces 41X, 41Y, 51X, and 51Y. It is judged that it is flowing along. When the liquid leak detection device 90 detects a change in the optical path length of the detection light L3, it is determined that the water Lq is starting to accumulate on the base board 21.

For example, when the liquid leakage detection device 80 detects water Lq, the control device CONT stops the exposure process. Further, the supply of the water Lq by the liquid supply device 19a is stopped, and all the water Lq in the immersion area AR is recovered. This is to minimize leakage of water Lq from the immersion area AR.
Further, for example, even if the water leakage detection device 80 detects water Lq, the exposure processing is continued, and when the liquid leakage detection devices 60 and 70 detect water Lq, the exposure processing is stopped. You can also. When water Lq is detected by the liquid leakage detection devices 60 and 70, that is, when the water Lq is flowing down the reflecting surfaces 41X, 41Y, 51X, and 51Y, the laser beams from the interferometers 42, 44, and 52 are emitted. This is because an error occurs in the position measurement of wafer stage WST or measurement stage MST by touching this water Lq. In particular, in wafer stage WST, it is difficult to position wafer W with high accuracy, and it becomes impossible to expose a fine pattern.
On the other hand, when water Lq is detected by the liquid leak detection device 80, but water Lq is not detected by the liquid leak detection devices 60 and 70, the exposure process is continued until the water Lq is detected by the liquid leak detection device 90. You may make it do. In this case, the water Lq leaked from the liquid immersion area AR remains on the wafer table WTB or the measurement table MTB or on the base board 21 from a side surface different from the reflective surfaces 41X, 41Y, 51X, 51Y. Should have flowed down. For this reason, no error occurs in the position measurement of wafer stage WST and measurement stage MST by interferometers 42, 44, and 52, and the exposure process may be continued as it is. Then, when water Lq is detected by the liquid leakage detection device 90, the water Lq may enter the other part of the exposure apparatus EX. Therefore, the exposure process is stopped and the liquid supply device 19a is used. The supply of water Lq is also stopped.
As described above, since leakage of the water Lq is detected at a plurality of locations, measures such as stopping the exposure process or collecting the water Lq in the immersion area AR are taken according to the detected location. be able to.

As described above, according to the exposure apparatus EX of the present embodiment, the water Lq attached to the reflecting surfaces 41X and 41Y can be detected without hindering the position detection of the wafer stage WST due to interference. While the wafer stage WST is positioned with high accuracy, it is possible to monitor whether or not the water Lq adheres to the reflecting surfaces 41X and 41Y that may interfere with the position measurement of the wafer stage WST.
Then, by detecting the water Lq leaked from the liquid immersion area AR, it is possible to prevent the occurrence of a malfunction of the exposure apparatus EX due to the leakage of the water Lq.

Note that the operation procedure shown in the above-described embodiment, various shapes and combinations of the constituent members, and the like are examples, and various modifications can be made based on design requirements and the like without departing from the gist of the present invention.
For example, the present invention includes the following modifications.

In the above-described embodiment, the case where the laser interferometer is used as the projector and the light receiver of the liquid leakage detection devices 60, 70, 80, and 90 has been described. However, instead of this, a photosensor including the projector and the light receiver may be used. Good. That is, when the detection light of the photosensor passes through water, the amount of detection light changes, so that the presence of water can be detected based on the change in the amount of light.
In the above-described embodiment, the case where the reflecting mirror is used to reflect the detection light in the predetermined direction has been described. However, an optical element such as a beam splitter or a prism may be used.

  In the liquid leakage detection devices 70 and 80, the form in which the projector and the light receiver are arranged at positions separated from the wafer stage WST or the measurement stage MST has been described. However, the present invention is not limited to this. You may make it install both a light projector and a light receiver in wafer table WTB and measurement table MTB. When both the projector and the light receiver are installed on the wafer table WTB, the detection light from the light projector may be received directly by the light receiver or via a reflecting mirror.

  Moreover, although the case where the detection light is caused to travel along the reflection surfaces provided on the two side surfaces of the wafer table WTB and the measurement table MTB has been described, the present invention is not limited thereto. For example, the detection light may travel along the entire circumference (four side surfaces) of the wafer table WTB and the measurement table MTB, or the detection light may travel along three or one side surface. Good. In this case, for example, a light projector and a light receiver may be installed for each side surface.

In the liquid leakage detection device 80, the case where the detection light L2 travels at a position separated from the upper surface of the wafer table WTB or the measurement table MTB has been described. For example, as shown in FIG. 5, linear grooves are formed along the side surfaces on the outer edges of the upper surfaces of the wafer table WTB and the measurement table MTB, and the detection light L2 is caused to travel to a position away from the bottom surface of the grooves. You may do it. In this case, both the light projector 81 and the light receiver 82 are installed on the wafer table WTB and the measurement table MTB, respectively. Thereby, since the water Lq leaked from the liquid immersion area AR flows into the groove, the liquid leak detection device 80 can reliably detect the leaked water Lq.
Similarly, in the liquid leakage detection device 90, a linear groove may be formed on the base board 21, and the detection light L3 may be caused to travel along the bottom surface of this groove. In this case, it is possible to detect the water Lq leaked to the base board 21 by running the detection light L3 in the moving area of the wafer stage WST on the base board 21.

  As reflection surfaces 41X and 41Y, instead of the configuration formed on the end surface of wafer table WTB, a Y movable mirror having a reflection surface extending in the X direction on the upper surface of wafer table WTB and a reflection surface extending in the Y direction It is good also as a structure which each provides X moving mirror which has. Similarly, as the reflection surfaces 51X and 51Y, instead of the configuration formed on the end surface of the measurement table MTB, a Y movable mirror having a reflection surface extending in the X direction on the upper surface of the measurement table MTB and extending in the Y direction. It is good also as a structure which each provides the X movement mirror which has a reflective surface. In this case, only the liquid leakage detection devices 60 and 90 need be installed.

  In this embodiment, an optical element is attached to the tip of the projection optical system, and the optical characteristics of the projection optical system, for example, aberration (spherical aberration, coma aberration, etc.) can be adjusted by this optical element. The optical element may be an optical plate used for adjusting the optical characteristics of the projection optical system. Alternatively, it may be a parallel flat plate that can transmit exposure light.

  If the pressure between the optical element at the tip of the projection optical system and the substrate generated by the liquid flow is large, the optical element is not exchangeable, but the optical element is not moved by the pressure. It may be firmly fixed.

  In this embodiment, the space between the projection optical system and the substrate surface is filled with a liquid, but for example, the liquid is filled with a cover glass made of a plane parallel plate on the surface of the substrate. There may be.

  In the projection optical system of the above-described embodiment, the optical path space on the image plane side of the optical element at the tip is filled with the liquid, but as disclosed in International Publication No. 2004/019128, the optical at the tip. It is also possible to employ a projection optical system in which the optical path space on the object plane side of the element is filled with liquid.

  In addition, although the liquid of this embodiment is water, liquids other than water may be sufficient, for example, when the light source of exposure light is F2 laser, since this F2 laser beam does not permeate | transmit water, as liquid For example, a fluorine-based fluid such as perfluorinated polyether (PFPE) or fluorine-based oil that can transmit F2 laser light may be used. In this case, the lyophilic treatment is performed by forming a thin film with a substance having a small molecular structure including fluorine, for example, in a portion in contact with the liquid. In addition, as the liquid, a liquid that is transmissive to exposure light, has a refractive index as high as possible, and is stable with respect to the projection optical system and the photoresist applied to the substrate surface (for example, cedar oil) is used. It is also possible.

  A liquid having a refractive index of about 1.6 to 1.8 may be used. Furthermore, the optical element may be formed of a material having a refractive index higher than that of quartz or fluorite (for example, 1.6 or more).

  In the above-described embodiment, an exposure apparatus that locally fills the liquid between the projection optical system and the substrate is employed. However, the present invention is disclosed in JP-A-6-124873 and JP-A-10-303114. The present invention is also applicable to an immersion exposure apparatus that performs exposure in a state where the entire surface of a substrate to be exposed is immersed in a liquid as disclosed in US Pat. No. 5,825,043.

The type of the exposure apparatus EX is not limited to an exposure apparatus for manufacturing a semiconductor element that exposes a semiconductor element pattern on a wafer, but an exposure apparatus for manufacturing a liquid crystal display element or a display, a thin film magnetic head, an image sensor (CCD) Alternatively, it can be widely applied to an exposure apparatus for manufacturing a reticle or a mask.
Similarly, as the wafer W, not only a semiconductor wafer for manufacturing a semiconductor device but also a glass substrate for a display device, a ceramic wafer for a thin film magnetic head, and the like are applied.

  As the exposure apparatus EX, in addition to a step-and-scan type scanning exposure apparatus (scanning stepper) that scans and exposes a reticle pattern by moving the reticle and wafer synchronously, the reticle and wafer are stationary. The present invention can also be applied to a step-and-repeat type projection exposure apparatus (stepper) that performs batch exposure of reticle patterns and sequentially moves the wafer stepwise. The present invention can also be applied to a step-and-stitch type exposure apparatus that transfers at least two patterns partially overlapped on a wafer.

  In the above-described embodiment, the case where the wafer stage apparatus is provided with a measurement stage is a so-called twin stage type exposure apparatus, but a so-called single stage type exposure apparatus without a measurement stage is also provided. Good.

  An exposure apparatus to which the present invention is applied is a light transmissive mask in which a predetermined light-shielding pattern (or phase pattern / dimming pattern) is formed on a light transmissive substrate, or a light transmissive substrate. For example, a transmission pattern based on electronic data of a pattern to be exposed, such as disclosed in US Pat. No. 6,778,257, is not limited to the one using a light reflection type mask on which a reflection pattern is formed. Alternatively, it may be an exposure apparatus using an electronic mask that forms a reflection pattern or a light emission pattern.

  The exposure apparatus of the present embodiment is manufactured by assembling various subsystems including the respective constituent elements recited in the claims of the present application so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. The In order to ensure these various accuracies, before and after assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are Adjustments are made to achieve electrical accuracy. The assembly process from the various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection and the like between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus. The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.

  As shown in FIG. 6, the microdevice such as a semiconductor device includes a step S10 for designing the function and performance of the microdevice, a step S11 for producing a mask (reticle) based on the design step, and a substrate which is a substrate of the device S12 for manufacturing, exposure processing step S13 for exposing the mask pattern onto the substrate by the exposure apparatus EX of the above-described embodiment, device assembly step (including dicing process, bonding process, packaging process) S14, inspection step S15, etc. Manufactured.

It is a side view which shows schematic structure of the exposure apparatus EX by embodiment of this invention. It is a perspective view which shows the structure of the stage apparatus ST of this embodiment. It is a schematic diagram which shows the structure of the liquid leak detection apparatus 60 of this embodiment. It is a schematic diagram which shows the structure of the liquid leak detection apparatuses 80 and 90 of this embodiment. It is a schematic diagram which shows the modification of the liquid leak detection apparatus 80 of this embodiment. It is a flowchart which shows an example of the manufacturing process of a semiconductor device.

Explanation of symbols

21 ... Base board 41X, 41Y ... Reflecting surface (moving mirror)
42 ... X-axis interferometer 44 ... Y-axis interferometer 51X, 51Y ... Reflecting surface (moving mirror)
60, 70, 80, 90 ... Liquid leakage detection device 61, 71, 81, 91 ... Projector (projector)
62, 72, 82, 92 ... Light receiver (light receiving part)
L1, L2, L3 ... detection light EX ... exposure apparatus W ... wafer (substrate)
Lq: water (liquid, foreign matter)
AR ... Immersion area WTB ... Wafer table (substrate stage)
MTB ... Measurement table CONT ... Control device

Claims (10)

In an exposure apparatus for supplying a liquid to a substrate held on a substrate table and exposing a pattern on the substrate,
A position detecting device for detecting the position of the substrate table in cooperation with a movable mirror provided on the substrate table;
A detection device that has a light projecting unit and a light receiving unit, and detects a foreign matter attached to the movable mirror without interposing an optical member at a position facing the movable mirror;
An exposure apparatus comprising:   The exposure apparatus according to claim 1, wherein the detection apparatus detects the foreign matter based on a change in an optical path length of detection light emitted from the light projecting unit.   The exposure apparatus according to claim 1, wherein the light projecting unit emits the detection light along a direction orthogonal to a detection direction for detecting the position of the substrate table.   The exposure apparatus according to claim 1, wherein the light projecting unit and the light receiving unit are provided independently from the substrate table. A table different from the substrate table;
A second detection device for detecting foreign matter on a movable mirror provided on the table;
The exposure apparatus according to any one of claims 1 to 4, further comprising: In an exposure apparatus for supplying a liquid to a substrate held on a substrate table to form an immersion area on the substrate and exposing a pattern on the substrate,
An exposure apparatus comprising: a light projecting unit that emits detection light so as to surround the liquid immersion area; and a detection device that detects an abnormality outside the liquid immersion area.   The exposure apparatus according to claim 6, wherein the light projecting unit is provided independently of the substrate table.   The exposure apparatus according to claim 6, further comprising a control device that stops supply of the liquid to the substrate when the detection device detects the abnormality. In an exposure apparatus for supplying a liquid to a substrate placed on a substrate stage moving on a base and exposing a pattern on the substrate,
An exposure apparatus comprising: a light projecting unit that emits detection light in a movement region of the substrate stage on the base; and a detection device that detects foreign matter on the base. A groove is formed in the base,
The exposure apparatus according to claim 9, wherein the light projecting unit emits the detection light along the groove.

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