JP2006332183A - Device and method for manufacturing semiconductor film - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent the occurrence of ridges without adding any step. <P>SOLUTION: A laser annealing device 30 is provided with a stage 8 wherein a processing substrate 5 wherein an amorphous silicon film 5b is formed on its surface is placed, and a laser light irradiator 20 wherein a laser light 10 is given to the amorphous film 5b of the processing substrate 5 placed on the stage 8. The laser annealing device 30 crystallizes the amorphous silicon film 5b in order by scanning the irradiated area of the laser light 10 emitting from the laser light irradiator 20 along the surface of the amorphous silicon film 5b. In this case, a transparent plate 4 is provided between the laser light irradiator 20 and the stage 8, it has a light scattering means with an uneven surface layer 4b to scatter the laser light 10. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a semiconductor film manufacturing apparatus and manufacturing method, and more particularly to a laser annealing apparatus for crystallizing a semiconductor film formed on a substrate.

  A method for forming a polysilicon film by melting and solidifying an amorphous silicon film as a semiconductor film has been widely studied. Since this polysilicon film is a polycrystalline silicon film, the electron transfer speed is higher than that of an amorphous silicon film. Therefore, for example, in an active matrix type liquid crystal display device, a thin film transistor (hereinafter abbreviated as “TFT”) having a polysilicon film as a constituent element is used not only as a switching element provided for each pixel but also as a driver or a control circuit. It can also be used as a peripheral circuit represented by In such an active matrix liquid crystal display device, when the TFT is formed for each pixel on the active matrix substrate, the TFT for the peripheral circuit as described above can be formed. Such a technique is called “Monolithic”, and can greatly reduce cost, downsize, and improve reliability. Therefore, technological development for forming a polysilicon film has been attracting attention in recent years.

  Examples of the method for forming the polysilicon film include a solid phase growth method (SPC method) in which heating is performed in a thermal diffusion furnace, a laser annealing method in which laser light is irradiated to melt and solidify. Here, in the former SPC method, although a uniform polysilicon film is formed, an inexpensive glass substrate with low heat resistance cannot be used because the process temperature is a high temperature around 1000 ° C. Therefore, the latter laser annealing method is often used because it causes little thermal damage to the glass substrate and can be processed at a low temperature. In this laser annealing method, excimer laser light having a high light absorption rate with respect to the amorphous silicon film is mainly used.

For example, Patent Document 1 discloses a method for manufacturing a semiconductor device that suppresses generation of a ridge, which will be described later, by performing a crystallization process using laser light in two steps.
JP-A-8-148428

  Incidentally, FIG. 12 is a cross-sectional view of a conventional laser annealing apparatus 130. The laser annealing apparatus 130 includes a laser oscillator 101 for oscillating excimer laser light, an optical system 102 for condensing the oscillated laser light, and a process chamber for processing the processing substrate 105 in a predetermined atmosphere. 103.

  A stage 108 on which the processing substrate 105 is placed is provided inside the process chamber 103. The stage 108 is configured to be movable in the X direction and the Y direction by a stage scanning mechanism 109. Further, a transmission plate 104 for introducing the laser beam 110 from the optical system 102 into the process chamber 103 is provided on the upper surface of the process chamber 103.

  In the laser annealing apparatus 130 configured as described above, the stage 108 on which the processing substrate 105 having an amorphous silicon film formed thereon is moved at a constant speed by the stage scanning mechanism 109, and the laser oscillator 101 and the optical system 102 are moved. By irradiating the surface of the processing substrate 105 with the laser beam 110 from the transmission plate 104, the amorphous silicon film on the surface of the processing substrate 105 is sequentially melted and solidified to become a polysilicon film.

  Here, the excimer laser light used in the laser annealing apparatus 130 is, for example, ArF excimer laser light (wavelength 193 nm), KrF excimer laser light (wavelength 248 nm), XeCl excimer laser light (wavelength 308 nm), XeF excimer laser light ( This is a pulsed laser beam having a wavelength of 353 nm. These pulsed laser beams (pulse laser beams) are preferably used because they have high output for each pulse and high power conversion efficiency.

  By the way, since the amorphous silicon film is melted and solidified everywhere in the irradiation region irradiated with the pulse laser beam, there is no direction of crystal growth. Therefore, a crystal grain boundary which is a boundary between crystal grains is randomly generated, and a distortion between the crystal grains causes irregular bumps called ridges in the polysilicon film. The generation of this ridge is also considered to be caused by the output difference of each pulse of the laser oscillator 101.

  Note that the size of the ridge is considered to largely depend on the crystal state of the semiconductor film (amorphous silicon film or polysilicon film) before the laser light irradiation. For example, when laser light irradiation is performed on a polysilicon film crystallized by the SPC method, a relatively large crystal is already formed by the SPC method, so that a larger ridge is generated. In addition, when the crystallization of the amorphous silicon film is promoted by adding a small amount of a metal as a catalyst to the amorphous silicon film, a relatively large crystal can be obtained by laser light irradiation. Become.

  Thus, when a large ridge is formed, an electric field concentrates on the portion of the ridge in an insulated gate element in which an electrode layer and a semiconductor layer are provided with an insulating layer in between, for example, a TFT. In addition, the insulating layer in the ridge portion becomes thin and a leak current is generated, and dielectric breakdown is likely to occur between the electrode layer and the semiconductor layer, so that the characteristics and reliability of the TFT may be deteriorated. .

  Further, as a method for suppressing such ridges, Patent Document 1 discloses a method in which the crystallization process by laser light is performed twice, but in this method, laser light is irradiated twice. Since it is necessary, the number of processes increases.

  The present invention has been made in view of such a point, and an object thereof is to suppress the generation of ridges without adding a process.

  In the present invention, a light scattering means for scattering the laser light is provided between the laser light irradiation part and the substrate mounting part.

  Specifically, a semiconductor film manufacturing apparatus according to the present invention includes a substrate mounting portion on which a substrate having a semiconductor film formed on a surface is mounted, and a semiconductor film on the substrate mounted on the substrate mounting portion. The semiconductor film is sequentially crystallized by scanning a laser light irradiation region irradiated from the laser light irradiation section along the surface of the semiconductor film. The semiconductor film manufacturing apparatus is characterized in that light scattering means for scattering the laser light is provided between the laser light irradiation unit and the substrate mounting unit.

  According to said structure, the irradiation area | region of the laser beam scattered by the light-scattering means is scanned along the surface of the semiconductor film of the board | substrate mounted in the board | substrate mounting part. Therefore, in the laser light irradiation area, the high intensity laser light is distributed in the inner part, and the low intensity laser light is distributed in the outer peripheral edge part, and the distributed laser light irradiation area is the semiconductor film. Is scanned along the surface. As a result, in the semiconductor film on the substrate surface, the laser beam is first heated and melted when entering the laser beam irradiation region from the peripheral end portion to the inner portion, and then from the inner portion to the peripheral end portion and further to the laser beam. Since the solidification occurs due to cooling with a gentle temperature gradient when advancing outside the irradiation region, generation of ridges is suppressed. Therefore, since the generation of the ridge is suppressed only by providing the light scattering means between the laser beam irradiation unit and the substrate mounting unit, the generation of the ridge can be suppressed without adding a process.

  The substrate mounting portion includes a processing chamber provided therein, and a laser beam from the laser light irradiation unit disposed outside the processing chamber is transmitted to a substrate of the substrate mounting portion on a wall of the processing chamber. A transmission part that transmits light toward the semiconductor film may be provided, and the light scattering means may be provided in the transmission part.

  According to said structure, since a light-scattering means is provided to the permeation | transmission part provided in the wall of the process chamber, the temperature gradient at the time of solidification of a semiconductor film becomes gentle by the permeation | transmission part.

  The light scattering means may be constituted by a transmission plate that transmits the laser light from the laser light irradiation section, and an uneven surface layer having an uneven shape may be formed on the surface of the transmission plate.

  According to said structure, it becomes possible to scatter a laser beam only by forming the surface of the permeation | transmission board which permeate | transmits a laser beam in uneven | corrugated shape.

  The light scattering means may be constituted by a transmission plate that transmits the laser light from the laser light irradiation section, and a coating film that scatters the laser light may be provided on the surface of the transmission plate.

  According to said structure, it becomes possible to scatter a laser beam only by providing a coating film on the surface of the permeation | transmission board which permeate | transmits a laser beam.

  The light scattering means is constituted by a transmission plate that transmits laser light from the laser light irradiation unit, the transmission plate has a hollow structure, and an inner wall surface of the transmission plate has an uneven inner wall. An uneven layer may be formed.

  According to the above configuration, even if the outer wall surface of the transmission plate is contaminated by scattering or evaporation of the semiconductor film material from the substrate, the uneven layer on the inner wall surface is not contaminated.

  Further, in the method of manufacturing a semiconductor film according to the present invention, the semiconductor film formed on the substrate is irradiated with laser light, and the irradiation region of the laser light is scanned along the surface of the semiconductor film, A method of manufacturing a semiconductor film in which the semiconductor film is sequentially crystallized, wherein the semiconductor film is irradiated with the laser light scattered.

  According to said method, the irradiation area | region of the scattered laser beam is scanned along the surface of the semiconductor film of a board | substrate. Therefore, in the laser light irradiation area, the high intensity laser light is distributed in the inner part, and the low intensity laser light is distributed in the outer peripheral edge part, and the distributed laser light irradiation area is the semiconductor film. Is scanned along the surface. As a result, in the semiconductor film on the substrate surface, the laser beam is first heated and melted when entering the laser beam irradiation region from the peripheral end portion to the inner portion, and then from the inner portion to the peripheral end portion and further to the laser beam. Since the solidification occurs due to cooling with a gentle temperature gradient when advancing outside the irradiation region, generation of ridges is suppressed. Therefore, since the generation of the ridge is suppressed only by scattering the laser light, the generation of the ridge can be suppressed without adding a process.

  According to the semiconductor film manufacturing apparatus of the present invention, since the light scattering means for scattering the laser light is provided between the laser light irradiation part and the substrate mounting part, the temperature gradient during solidification of the semiconductor film is reduced. It becomes gentle and the generation of ridges can be suppressed without adding a process.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In addition, this invention is not limited to the following embodiment.

Embodiment 1 of the Invention
1 to 10 show Embodiment 1 of a semiconductor film manufacturing apparatus and method according to the present invention. Here, FIG. 1 is a cross-sectional view of a laser annealing apparatus 30 which is a semiconductor film manufacturing apparatus, and FIG. 2 is an enlarged view of a main part around a transmission plate 4 constituting the laser annealing apparatus 30. FIG. 3 is a schematic diagram showing a crystallization process in the laser annealing apparatus 30 corresponding to FIG. Further, FIGS. 4 to 9 are enlarged views of main parts showing modified examples of the transmission plate 4 of FIG.

  The laser annealing apparatus 30 includes a laser oscillator 1 for oscillating an excimer laser beam, and a laser beam irradiation unit 20 configured by an optical system 2 for condensing the excimer laser beam oscillated by the laser oscillation unit 1. A process chamber (processing chamber) 3 for processing the processing substrate 5 in a predetermined atmosphere is provided. The process chamber 3 is formed in a substantially sealed structure with a metal or the like that does not transmit the laser beam 10.

  Inside the process chamber 3, a stage (substrate placement unit) 8 on which the processing substrate 5 is placed is provided. The stage 8 is configured to be movable in the X direction and the Y direction by a stage scanning mechanism 9. Further, a transmission plate (transmission part) 4 for transmitting the laser beam 10 from the optical system 2 is provided on the upper surface of the process chamber 3. Furthermore, a gas inlet 6 for introducing an inert gas such as nitrogen gas and a gas outlet 7 connected to a vacuum pump or the like for discharging the inert gas are provided on the side surface of the process chamber 3. Is provided.

  As shown in FIG. 2, the transmissive plate 4 constituting the light scattering means is composed of a transmissive plate main body portion 4a and a concavo-convex surface layer 4b formed in a concavo-convex shape on the upper surface thereof. In this transmission plate 4, the laser beam 10 incident from the optical system 2 is refracted in multiple directions by the uneven surface layer 4b, and is emitted in a scattered state from the lower surface of the transmission plate body 4a. The transmission plate 4 is made of a thick quartz plate in order to maintain the vacuum state inside the process chamber 3. The uneven surface layer 4b is formed to have a surface roughness Ra of 0.5 to 1.0 μm, for example, by subjecting the surface of the quartz plate to sand blasting using abrasive grains having a particle size of 20 to 70 μm. Has been.

  In addition to the configuration shown in FIG. 2, the transmission plate 4 may have a configuration as shown in FIGS. 5 to 9.

5 and 6, coating films 4c and 4d for scattering the laser beam 10 are provided on the upper surface of the transmission plate body 4a, respectively. The peritoneum 4c shown in FIG. 5 is, for example, a silicon dioxide-based powder coating film, or a sputtering coating film of ITO (Indium Tin Oxide), SnO ₂ , ZrO ₂ , TiO ₂ or the like. Further, in the peritoneum 4d shown in FIG. 6, a large number of bubbles are enclosed therein.

  In FIG. 7, the transmission plate body 4 a has a hollow structure, and an uneven inner wall uneven layer 4 e is formed on the inner wall surface of the transmission plate body 4 a. In the transmissive plate 4, the laser beam 10 incident on the upper surface of the transmissive plate main body portion 4a from the optical system 2 is refracted in multiple directions by the inner wall uneven layer 4e and scattered from the lower surface of the transmissive plate main body portion 4a. It will be emitted. In this transmission plate 4, an uneven layer functioning as a light scattering means is provided inside, so even if the outer wall surface of the transmission plate 4 is contaminated by scattering or evaporation of the semiconductor film material from the processing substrate 5, The inner wall uneven layer 4e on the inner wall surface is not contaminated. The transmission plate 4 is manufactured by bonding a quartz plate whose surface is sandblasted and a quartz plate not sandblasted at a predetermined interval.

  In FIG. 8, a slit pattern 4f made of a photosensitive resin is provided on the upper surface of the transmission plate body 4a. Due to the slit pattern 4f, the surface of the transmission plate 4 is formed substantially in an uneven shape, and the laser beam 10 from the optical system 2 is scattered.

  In FIG. 9, a concave lens layer 4g having a concave lens shape is provided on the lower surface of the transmission plate body 4a. A convex lens layer formed in the shape of a convex lens may be provided on the lower surface of the transmission plate body 4a instead of the concave lens layer 4g.

The laser oscillator 1 includes, for example, ruby laser light, YAG laser light, ArF excimer laser light (wavelength 193 nm), KrF excimer laser light (wavelength 248 nm), XeCl excimer laser light (wavelength 308 nm), XeF excimer laser light (wavelength 353 nm). Pulse oscillation laser light such as Ar laser light, Kr laser light, CO ₂ laser light, ArF excimer laser light, KrF excimer laser light, XeCl excimer laser light, XeF excimer laser light, etc. It is configured to be output.

  The stage scanning mechanism 9 scans the irradiation area of the laser beam 10 from one end to the other end in the X direction of the processing substrate 5, for example, and then the width of the laser beam 10 or the splicing in the Y direction of the processing substrate 5. The alignment region is moved by a width slightly narrower than the width of the laser beam 10 so that it can be somewhat formed, and is scanned from the other end in the X direction of the processing substrate 5 to one end.

  Next, a method for manufacturing a semiconductor film using a laser annealing apparatus 30 including the transmission plate 4 as shown in FIG. 2 will be described. This semiconductor film is manufactured by the following preparation process, accommodation process, and laser irradiation process.

<Preparation process>
In the preparation step, the processing substrate 5 placed on the stage 8 is prepared.

  Specifically, the processing substrate 5 is formed by forming an amorphous silicon film 5b to be a semiconductor film with a thickness of about 50 to 150 nm on the glass substrate 5a by using a plasma CVD method, a sputtering method, or the like.

  Note that, before forming the amorphous silicon film 5b on the glass substrate 5a, for example, a base coat film made of a silicon oxide film may be formed to prevent diffusion of impurities from the glass substrate. Further, after the amorphous silicon film 5b is formed, a small amount of nickel, palladium, lead or the like is added as a catalyst on the amorphous silicon film 5b by a plasma treatment method, a vapor deposition method, an ion implantation method, a sputtering method, a solution coating method, or the like. May be.

<Containment process>
In the accommodation step, the processing substrate 5 formed in the preparation step is accommodated in the process chamber 3 and placed on the upper surface of the stage 8. Further, impurities in the process chamber 3 are discharged from the gas discharge port 7 using a vacuum pump or the like, and then an inert gas such as nitrogen gas is introduced into the process chamber 3 from the gas introduction port 6. Keep the inside in a predetermined atmosphere.

<Laser light irradiation process>
In the laser light irradiation step, the semiconductor film of the processing substrate 5 is irradiated with laser light.

  Specifically, while moving the stage 8 on which the processing substrate 5 is placed at a constant speed by the stage scanning mechanism 9, the laser light 10 from the laser light irradiation unit 20 is transmitted through the transmission plate 4 to the processing substrate 5. Irradiate the amorphous silicon film 5b on the surface. Thereby, the amorphous silicon film 5b on the surface of the processing substrate 5 is sequentially melted and solidified as shown in FIG. 3 to become a polysilicon film 5c.

  Here, FIG. 4 is a schematic view schematically showing the intensity distribution of the laser light from the side in the portion surrounded by the ellipse in FIG. 3 of the laser light 10 scattered by the transmission plate 4. In the irradiation region of the laser light 10 shown in FIG. 4, high-intensity laser light is distributed in the inner part, and low-intensity laser light is distributed in the outer peripheral edge part. Then, the irradiation region of the laser beam 10 distributed as shown in FIG. 4 is scanned along the surface of the amorphous silicon film 5b. As a result, the amorphous silicon film 5b on the surface of the processing substrate 5 is first heated and melted when entering the irradiation region of the laser light 10 from the peripheral end portion to the inner portion, and then the peripheral portion from the inner portion. Since the solidification occurs due to cooling in a state where the temperature gradient is gentle when the end portion further moves out of the irradiation region of the laser beam 10, generation of ridges can be suppressed.

  On the other hand, as shown in FIG. 13, when the light scattering means is not provided in the transmission plate 104, the laser light 110 from the optical system 102 in FIG. Since the amorphous silicon film 105b on the surface of the substrate 105 is irradiated, the intensity distribution of the laser beam 110 is as shown in FIG. That is, in the irradiation region of the laser beam 110 shown in FIG. 14, high-intensity laser light is distributed in the inner part, and low-intensity laser light is distributed in the outer peripheral edge part. The intensity change is steeper than in the case shown in FIG. As a result, the amorphous silicon film 105b on the surface of the processing substrate 105 is first heated and melted when entering the irradiation region of the laser light 110 from the peripheral end portion to the inner portion, and then the peripheral portion from the inner portion. Since the solidification occurs due to cooling with a steep temperature gradient when advancing outside the end portion and further the laser light irradiation region, a large ridge is generated in the polysilicon film 105c.

Next, as an example of the first embodiment of the present invention, a polysilicon film was manufactured by irradiating the amorphous silicon film formed on the substrate with laser light by the same method as in the first embodiment. Specifically, a substrate in which an amorphous silicon film is formed to a thickness of about 50 nm on a glass substrate is formed, XeCl excimer laser light with an irradiation intensity of 200 to 1000 mJ / cm ² , and a surface roughness Ra of 1. Scanning was performed along the surface of the amorphous silicon film through a 0.0 μm transmission plate.

  Further, as a comparative example, a polysilicon film was manufactured in the same manner as in the example except that the transmission plate was not used.

  Then, in order to evaluate the state of the ridge in each manufactured polysilicon film, the height of the surface unevenness due to the ridge of each polysilicon film, that is, the surface roughness Ra, is measured at three locations by an atomic force microscope (Atomic Force Microscope). ). FIG. 10 is a graph showing the surface roughness Ra at any three locations (P1, P2 and P3) on the substrate. In addition, the square mark in a graph is the measurement data in an Example, and a triangle mark is the measurement data in a comparative example similarly. As can be seen from FIG. 10, the surface roughness Ra is 5 to 8 nm in the example, and the surface roughness Ra is 13 to 16 nm in the comparative example in which the transmission plate is not used. Then, since the surface roughness Ra was suppressed to about 1/3, it was confirmed that generation | occurrence | production of a ridge is suppressed by scattering a laser beam.

  As described above, according to the first embodiment, the irradiation region of the laser light 10 scattered by the transmission plate 4 on the wall surface of the process chamber 3 is formed on the amorphous silicon film 5 b of the processing substrate 5 placed on the stage 8. It is scanned along the surface. For this reason, in the irradiation region of the laser beam 10, a high intensity laser beam is distributed in the inner portion, and a low intensity laser beam is distributed in the outer peripheral end portion thereof, and the irradiation region of the laser beam 10 thus distributed is Scanning is performed along the surface of the amorphous silicon film 5b. As a result, in the amorphous silicon film 5b, the laser beam 10 is first heated and melted when entering the inner portion from the peripheral end portion to the irradiation region of the laser beam 10, and then the inner portion to the peripheral end portion and further the laser beam. Since the solidification occurs due to cooling in a state where the temperature gradient is gradual when advancing outside the 10 irradiation region, generation of ridges is suppressed. Therefore, for example, by arranging the transmission plate 4 having the concavo-convex surface layer 4b as the light scattering means between the laser light irradiation unit 20 and the stage 8, the generation of ridges can be suppressed. The generation of ridges can be suppressed without this.

<< Embodiment 2 of the Invention >>
FIG. 11 shows Embodiment 2 of the semiconductor film manufacturing apparatus and method according to the present invention. In addition, in the following embodiment, the same code | symbol is attached | subjected about the same part as FIGS. 1-10, and the detailed description is abbreviate | omitted.

  FIG. 11 is a cross-sectional view of a laser annealing apparatus 30 having an internal transmission plate 14.

  In the laser annealing apparatus 30, the uneven layer or the like is not formed on the external transmission plate 4 a on the wall surface of the process chamber 3 as in the first embodiment, and the internal transmission plate 14 is interposed between the external transmission plate 4 a and the stage 8. Is provided.

  As shown in FIG. 11, the internal transmission plate 14 includes a transmission plate main body 14a and an uneven surface layer 14b that is formed in an uneven shape on the upper surface thereof and functions as light scattering means. In the internal transmission plate 14, the laser light 10 incident from the optical system 2 and the external transmission plate 4a is refracted in multiple directions by the concave and convex surface layer 14b, and is emitted in a scattered state from the lower surface of the transmission plate main body portion 14a. become. The internal transmission plate 14 is made of a quartz plate, like the transmission plate 4 of the first embodiment. And the uneven | corrugated surface layer 14b is formed in the surface roughness Ra to 0.5-1.0 micrometer by carrying out the sandblasting process using the abrasive grain with a particle size of 20-70 micrometers on the surface of the quartz plate, for example. . Further, the external transmission plate 4 a is formed of a thick quartz plate in order to maintain the vacuum state inside the process chamber 3. According to such a configuration, even if the surface of the internal transmission plate 4a is contaminated by scattering or evaporation of the semiconductor film material from the processing substrate 5, the external transmission plate 4a is not contaminated. The cleaning cycle can be extended.

  As described above, since the present invention can suppress the generation of ridges, it is useful for a laser annealing apparatus for manufacturing a polysilicon film.

1 is a cross-sectional view of a laser annealing apparatus 30 according to a first embodiment. It is a principal part enlarged view of the periphery of the permeation | transmission board 4 which has the surface uneven | corrugated layer 4b. 3 is a schematic diagram showing a crystallization process in a laser annealing apparatus 30. FIG. It is the schematic diagram which showed typically the intensity distribution of the laser beam 10 in FIG. It is a principal part enlarged view of the periphery of the permeation | transmission board 4 which has the coating film 4c. It is a principal part enlarged view of the periphery of the permeation | transmission board 4 which has 4 d of coating films. It is a principal part enlarged view of the periphery of the permeation | transmission board 4 which has the inner wall uneven | corrugated layer 4e. It is a principal part enlarged view of the periphery of the permeation | transmission board 4 which has 4 f of slit patterns. It is a principal part enlarged view of the periphery of the permeation | transmission board 4 which has the concave lens layer 4g. It is the graph which showed surface roughness Ra in arbitrary three places (P1, P2, and P3) on a processing board. It is sectional drawing of the laser annealing apparatus 30 of Embodiment 2. FIG. It is sectional drawing of the conventional laser annealing apparatus 130. FIG. It is a schematic diagram which shows the operation | movement of the apparatus in the conventional laser annealing apparatus 130. FIG. It is the schematic diagram which showed typically the intensity distribution of the laser beam 110 in FIG.

Explanation of symbols

1 Laser oscillator 2 Optical system 3 Process chamber
4 Transmission plate (transmission part, light scattering means)
4b Uneven surface layer 4c, 4d Stomach membrane 4e Inner wall uneven layer 5 Process substrate 5b Amorphous silicon film (semiconductor film)
5c Polysilicon film (semiconductor film)
8 Stage (substrate placement part)
10 Laser beam 20 Laser beam irradiation unit 30 Laser annealing device (semiconductor film manufacturing device)

Claims (6)

A substrate mounting portion for mounting a substrate having a semiconductor film formed on the surface; and a laser light irradiation portion for irradiating laser light to the semiconductor film of the substrate mounted on the substrate mounting portion, A semiconductor film manufacturing apparatus that sequentially crystallizes the semiconductor film by scanning a laser light irradiation region irradiated from a laser light irradiation unit along the surface of the semiconductor film,
An apparatus for manufacturing a semiconductor film, characterized in that light scattering means for scattering the laser light is provided between the laser light irradiation part and the substrate mounting part. In the semiconductor film manufacturing apparatus according to claim 1,
A processing chamber in which the substrate mounting portion is provided;
On the wall of the processing chamber, there is provided a transmission unit that transmits laser light from the laser beam irradiation unit arranged outside the processing chamber toward the semiconductor film of the substrate of the substrate mounting unit,
The said light-scattering means is provided in the said permeation | transmission part, The manufacturing apparatus of the semiconductor film characterized by the above-mentioned. In the semiconductor film manufacturing apparatus according to claim 1,
The light scattering means is constituted by a transmission plate that transmits the laser light from the laser light irradiation unit,
An apparatus for producing a semiconductor film, wherein an uneven surface layer having an uneven shape is formed on the surface of the transmission plate. In the semiconductor film manufacturing apparatus according to claim 1,
The light scattering means is constituted by a transmission plate that transmits the laser light from the laser light irradiation unit,
An apparatus for manufacturing a semiconductor film, wherein a coating film for scattering the laser light is provided on a surface of the transmission plate. In the semiconductor film manufacturing apparatus according to claim 1,
The light scattering means is constituted by a transmission plate that transmits the laser light from the laser light irradiation unit,
The transmission plate has a hollow structure,
An apparatus for producing a semiconductor film, wherein an uneven inner wall uneven layer is formed on an inner wall surface of the transmission plate. A semiconductor film manufacturing method for sequentially crystallizing a semiconductor film by irradiating a semiconductor film formed on a substrate with laser light and scanning an irradiation region of the laser light along the surface of the semiconductor film Because
A method of manufacturing a semiconductor film, wherein the semiconductor film is irradiated with the laser light scattered.

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