JP2006324369A - Work, photomask, and exposure method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a work where a stable and constant gap is formed with a photomask during exposure, even when there is deflection, and a resist pattern of uniform dimension is formed. <P>SOLUTION: A resist 5 is formed on a flat exposure surface of a work 2. A spacer 1 is arranged on the resist 5. A work 2 is arranged on an exposure stage 6, and the work 2 is fixed by vacuum suction. The exposure stage 6 is raised so that the work 2 presses against a photomask 9 by way of the spacer 1. As a result, the deflected portion of the work 2 is pressed, from above by way of the spacer 1 to correct the deflection of the work 2. A uniform gap is formed between the work 2 and the photomask 9 due to the spacer 1. By exposing while a uniform gap is being maintained, a resist pattern of uniform dimensions as a whole, is formed on the exposure surface of the work 2. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a work used in photolithography, a photomask, and an exposure method.

  In a conventional proximity exposure apparatus, a belt-like spacer is provided with a slack at a position between a mask (photomask) and a work and out of the mask pattern formation region of the mask. The work refers to an object such as a semiconductor wafer that undergoes a photolithography process.

  Thus, when proximity exposure is performed on a film (30 μm thick stainless steel plate) work (work object) wound on a reel, a gap is provided between the photomask and the work to prevent contact during alignment. It is out.

  Here, the proximity exposure apparatus irradiates parallel light in a state in which the photomask and the workpiece are very close to each other, and a mask pattern is formed on the photoresist (hereinafter referred to as “resist”) formed on the workpiece. An exposure apparatus for transferring.

Japanese Patent No. 3379361 (FIG. 1)

  However, with a strip-shaped spacer having such a slack, a uniform gap (gap) is formed between the photomask and the workpiece when exposing a workpiece (disk shape or square shape) such as a Si wafer having warpage. Difficult to keep.

  When the gap between the photomask and the work becomes non-uniform, the resist pattern dimension on the work formed by exposure also becomes non-uniform within the surface of the work.

  In addition, there is a high possibility that the photomask and the workpiece come into contact with each other. For example, when a nitride film is formed on a Si wafer having a diameter of 125 mm by sputtering, the warpage is about 200 μm. In the proximity exposure method, when the gap is 150 μm or more, the exposure accuracy is inferior, and therefore the gap cannot be 200 μm or more. Therefore, the possibility that the photomask and the workpiece come into contact with each other increases, and the yield of the product decreases.

  Further, the belt-shaped spacer has a problem that the degree of freedom of the attachment position to the photomask is small.

  Accordingly, a first object of the present invention is to provide a workpiece in which a uniform gap is stably formed between a photomask and a resist pattern having a uniform dimension even when it has warpage. Is to provide.

  The second object of the present invention is to form a uniform uniform resist pattern on the workpiece, even when the workpiece has warpage, a stable and uniform gap is formed between the workpiece and the exposure. It is to provide a photomask that can be used.

  The invention according to claim 1 is a work in which a resist pattern is formed on a main surface by photolithography, and is in a region other than a region where the resist pattern is formed on the photoresist formed on the main surface. It is provided with the member which is arrange | positioned and has a fixed height.

  The invention according to claim 6 is a photomask in which a mask pattern is formed on a main surface, and is provided in a region other than a region where the mask pattern is formed and having a member having a certain height. It is characterized by.

  According to the first aspect of the present invention, the workpiece is warped by the member by pressing the workpiece against the photomask, and a uniform gap is formed between the member and the photomask. A resist pattern having a uniform dimension can be formed on the exposure surface by performing exposure while maintaining a uniform gap.

  In addition, since the mask pattern formed on the photomask and the exposed surface of the workpiece do not come into contact with each other, there is no possibility of causing dirt or scratches (pattern defects) on the mask pattern.

  According to the sixth aspect of the present invention, a uniform gap is formed between the photomask and the workpiece by the member during the proximity exposure. Therefore, a resist pattern having a uniform dimension can be formed on the workpiece.

  Further, since the mask pattern does not come into contact with the exposed surface of the work, the occurrence of dirt and scratches is prevented.

  The invention according to the following embodiments relates to a workpiece or a photomask used in a proximity exposure method such as a proximity exposure method or a contact exposure method.

  Note that the contact exposure method is a method in which exposure is performed in a state where a photomask and a workpiece are in contact with each other.

<Embodiment 1>
<A. Work structure>
FIG. 1 is a top view showing a configuration of a workpiece according to the first embodiment. FIG. 2 is a cross-sectional view taken along line AA in FIG.

  A photoresist (hereinafter referred to as “resist”) 5 is formed on the exposed surface (main surface) of the workpiece 2. A spacer (member) 1 having a certain height is disposed on the outer periphery of the resist 5. Further, as shown in FIG. 2, the work 2 is warped in a concave shape.

  Here, as will be described later, a resist pattern is formed on the main surface of the workpiece 2 by exposing the resist 5.

  The spacer 1 is not necessarily arranged on the outer peripheral portion, and may be attached to a region other than the region where the resist pattern is formed, such as a dicing line, an alignment mark portion, and a TEG portion. As will be described later, when the work 2 is warped in a convex shape, it is arranged at the center of the work 2, and when the work 2 is warped in a concave shape, it is placed at the outer periphery.

  The shape of the spacer 1 may be any shape that can form a uniform gap with the photomask when pressed against a photomask, which will be described later, such as a square shape, a cylindrical shape, or a hemispherical shape.

  The size of the spacer 1 is selected in the range of 1 to 15 mm in length and width in the case of a square, and in the range of 1 to 15 mm in the case of a cylinder and a hemisphere.

  The thickness of the spacer 1 ranges from 3 to 20 μm for dry film resist, 5 to 100 μm for Teflon (registered trademark) tape, Kapton tape and gap gauge, and 5 to 100 μm for plastic balls. Select and use.

  The material of the spacer 1 is preferably a dry film resist, a Teflon (registered trademark) tape, a Kapton tape, a gap gauge, a plastic ball, or the like. The spacer 1 made of these materials can be removed at the same time as the resist 5 is stripped in a later step, and there is no need to add a stripping process.

<B. Exposure method>
Next, an exposure method using the workpiece according to the present embodiment will be described with reference to FIG.

  FIG. 3 is a side view showing the positional relationship between the photomask 9 and the workpiece 2 during exposure. On the exposure stage 6, the work 2 is disposed so as to face the exposure surface facing the light source 8. The work 2 is vacuum-sucked and fixed on the exposure stage 6.

  A photomask 9 is disposed on the work 2 via a spacer 1. The photomask 9 has a configuration in which a mask pattern 4 is formed on a photomask substrate 3. Here, the mask pattern 4 is a pattern for selectively shielding light during exposure.

  The photomask 9 is arranged so that the mask pattern 4 faces the exposure surface of the workpiece 2.

Next, the exposure process of the workpiece 2 will be described in detail.
First, the photomask 9 is parallelized so that the photomask 9 is arranged parallel to the workpiece 2.

  Specifically, a master wafer is placed on the exposure stage 6 and the exposure stage 6 is raised and brought into contact with the photomask 9. Then, the angle of the photomask 9 is adjusted so that the main surface of the master wafer and the main surface of the photomask 9 are in close contact with each other. Then, the photomask 9 is fixed so as to be parallel to the master wafer.

  Next, a work 2 in which a spacer 1 is arranged on a resist 5 is prepared. Then, the work 2 is placed on the exposure stage 6 with the exposure surface facing up, and is fixed on the exposure stage 6 by vacuum suction.

  From the above, the photomask 9 is disposed to face the work 2 so that the main surface of the photomask 9 and the main surface of the work 2 are parallel to each other.

  Next, when the exposure stage 6 is raised, the spacer 1 and the photomask 9 come into contact with each other.

  When the exposure stage 6 is further raised, the work 2 and the photomask 9 are pressed through the spacer 1. Therefore, the warped part of the work 2 is pushed downward by the photomask 9 through the spacer 1, and the warp of the work 2 is corrected. And the photomask 9 and the workpiece | work 2 become a positional relationship shown in FIG. As shown in FIG. 3, a uniform gap is formed between the photomask 9 and the work 2 by the spacer 1.

  Next, exposure is performed with a uniform gap secured between the photomask 9 and the work 2. That is, exposure is performed while pressing the work 2 and the photomask 9. Light generated from the light source 10 passes through the photomask 9 and is selectively blocked by the mask pattern 4, and a pattern similar to the mask pattern 4 is transferred to the resist 5 formed on the workpiece 2.

  Thereafter, when the exposed workpiece 2 is developed, the spacer 1 is also removed simultaneously with the peeling of the portions other than the exposed resist 5, so that it is not necessary to add a step of removing the spacer 1.

<C. Effect>
Since the workpiece according to the present embodiment includes the spacer 1, the warping of the workpiece 2 is corrected during the proximity exposure, and a uniform gap is formed between the workpiece and the photomask 9. Therefore, a resist pattern having a uniform dimension can be formed on the entire exposed surface of the workpiece 2.

  At the same time, a gap is forcibly formed in the workpiece 2 and the photomask, and scratches and dirt on the mask pattern 4 can be prevented.

  The spacer 1 is formed on the resist 5. Therefore, since it peels from the workpiece | work 2 at a resist removal process (development process), it is not necessary to add the process for peeling the spacer 1. FIG.

  In the workpiece according to the present embodiment, since the spacer 1 is disposed on the outer peripheral portion, the warpage of the workpiece 2 that warps the concave shape can be corrected.

  Moreover, in the workpiece | work which concerns on this Embodiment, although the spacer 1 was arrange | positioned in the outer peripheral part, you may arrange | position in the center part. By attaching a spacer to the center of the workpiece 2, the warpage of the workpiece 2 that warps the convex shape can be corrected.

  When the spacer 1 is disposed at the center of the work 2, it is disposed on a dicing line where a resist pattern is not formed. Alternatively, a resist pattern may not be formed in the region where the spacer 1 is disposed.

  According to the exposure method of the present embodiment, the work 2 can be exposed by forming a uniform gap between the photomask 9 and the work 2. Therefore, a resist pattern having a uniform dimension can be formed on the entire exposed surface of the workpiece 2.

<Embodiment 2>
<A. Work structure>
FIG. 4 is a top view showing the configuration of the workpiece according to the present embodiment. FIG. 5 is a sectional view taken along line BB in FIG.

  A ring-shaped resist pattern 7 is formed in a ring shape on the outer peripheral portion on the exposure surface of the work 2. Further, as shown in FIG. 5, the workpiece 2 is warped in a concave shape.

  Here, the ring-shaped resist pattern 7 is formed as follows. First, a resist is formed on the front surface by spin coating or by applying a dry film resist. The resist thickness is suitably 3 to 20 μm.

  Then, a ring-shaped resist pattern 7 is formed by exposing and developing the resist in a ring shape by peripheral exposure. For example, in the case of a Si wafer having a diameter of 125 mm, the width of the ring is 3 to 15 mm.

<B. Exposure method>
Next, an exposure method using the workpiece according to the present embodiment will be described with reference to FIG.
FIG. 6 is a side view for explaining the positional relationship between the photomask 9 and the workpiece 2 at the time of exposure. The workpiece 2 is arranged with the exposure surface on which the resist 5 is formed on the exposure stage 6 facing the light source 8. The work 2 is vacuum-sucked and fixed on the exposure stage 6.

  On the workpiece 2, a ring-shaped ring-shaped resist pattern 7 is formed. A resist 5 is further formed on the work 2 so as to cover the ring-shaped resist pattern 7. As a result, a step is formed by the ring-shaped resist pattern 7 and the resist 5 thereabove.

  Here, the ring-shaped resist pattern 7 and the resist 5 thereabove correspond to the spacer 1 (see FIG. 3) in the first embodiment.

  A photomask 9 is disposed on the work 2. The photomask 9 has a configuration in which a mask pattern 4 is formed on a photomask substrate 3. Here, the mask pattern 4 is a pattern for selectively shielding light during exposure.

  The photomask 9 is arranged so that the mask pattern 4 faces the exposure surface of the workpiece 2.

Next, the exposure process of the workpiece 2 will be described in detail.
First, the photomask 9 is parallelized as in the first embodiment.

  Next, the work 2 is placed on the exposure stage 6 with the exposure surface facing upward, and fixed by vacuum suction. Here, a resist 5 is applied on the main surface of the work 2 so as to cover the ring-shaped resist pattern 7.

  From the above, the photomask 9 is disposed to face the work 2 so that the main surface of the photomask 9 and the main surface of the work 2 are parallel to each other.

  Next, when the exposure stage 6 is raised, the upper part of the resist 5 formed on the ring-shaped resist pattern 7 comes into contact with the photomask 9.

  When the exposure stage 9 is further raised, the workpiece 2 and the photomask 9 are pressed through the ring-shaped resist pattern 7 and the resist 5 formed thereon. Therefore, the portion along the workpiece 2 is pushed downward by the photomask 9 through the ring-shaped resist pattern 7 and the resist 5 formed thereon, and the warpage of the workpiece 2 is corrected. And the photomask 9 and the workpiece | work 2 become a positional relationship shown in FIG. As shown in FIG. 6, a uniform gap is formed between the photomask 9 and the work 2.

  Next, exposure is performed with a uniform gap secured between the photomask 9 and the work 2. That is, exposure is performed while pressing the work 2 and the photomask 9. Light generated from the light source 10 passes through the photomask 9 and is selectively blocked by the mask pattern 4, and a pattern similar to the mask pattern 4 is transferred to the resist 5 formed on the workpiece 2.

  Thereafter, when the exposed workpiece 2 is developed, a pattern similar to the mask pattern is formed inside the ring-shaped resist pattern 7.

<C. Effect>
The work according to the present embodiment includes a ring-shaped resist pattern 7. Therefore, by forming the resist 5 on the workpiece 2, a spacer (member) made of the resist can be formed. As a result, the warp of the workpiece 2 can be corrected by pressing the workpiece 2 against the photomask 9.

  For example, even when the workpiece 2 is warped by 200 μm, a uniform gap of 3 to 20 μm, which is the same as the spacer, can be formed between the workpiece 2 and the photomask 9.

  Therefore, high in-plane uniformity is obtained for the dimension of the pattern transferred to the resist 5 on the work 2. At the same time, a gap is forcibly formed in the work 2 and the photomask 9, and scratches and dirt on the mask pattern 4 can be prevented.

  The ring-shaped resist pattern 7 is made of the same material as the resist 5 and can be easily removed in a later process. Therefore, it is not necessary to add a peeling process for the ring-shaped resist pattern 7.

  Since the ring-shaped resist pattern 7 according to the present embodiment is formed in a ring shape from a resist, it can be easily formed on the outer periphery of the work 2 by peripheral exposure.

  In the present embodiment, the ring-shaped resist pattern is formed on the outer periphery of the work 2, but may be formed on the center of the work 2. Thus, even when the workpiece 2 warped in a convex shape is used, a uniform gap can be formed with the photomask 9.

  According to the exposure method according to the present embodiment, the work 2 can be exposed by forming a uniform gap between the photomask 9 and the work 2 by the ring-shaped resist pattern 7 and the resist 5. Therefore, a resist pattern having a uniform dimension can be formed on the entire exposed surface of the workpiece 2.

<Embodiment 3>
<A. Photomask configuration>
FIG. 7 is a top view showing the configuration of the photomask according to the third embodiment. 8 is a cross-sectional view taken along line CC in FIG.

  The photomask 9 has a configuration in which a mask pattern 4 is formed on a photomask substrate 3. Here, the mask pattern 4 is a pattern for selectively shielding light during exposure.

  A spacer (member) 8 having a certain height is attached to the outer periphery of the mask pattern 4 with an adhesive or the like.

  Specifically, the spacer 8 can be attached to the photomask substrate 8 by applying a spacer-mixed adhesive in which the spherical spacer 8 is mixed into the adhesive to a desired position of the photomask substrate 3.

<B. Exposure method>
Next, an exposure method using the photomask according to the present embodiment will be described with reference to FIG.

  FIG. 9 is a side view for explaining the positional relationship between the photomask 9 and the workpiece 2 at the time of exposure.

  A workpiece 2 is arranged on the exposure stage 6. The workpiece 2 is arranged with the exposure surface on which the resist 5 is formed facing the light source 10. The work 2 is vacuum-sucked and fixed on the exposure stage 6.

  A photomask 9 is disposed on the work 2 via a spacer 8. The photomask 9 is arranged so that the mask pattern 4 faces the exposure surface of the workpiece 2.

Next, the exposure process of the workpiece 2 will be described.
First, a photomask 9 on which spacers 8 are formed is prepared.

  Next, the surface of the photomask 9 on which the spacer 8 is formed is placed in the exposure apparatus so as to face the exposure stage 6. Then, as in the first embodiment, the photomask 9 is parallelized.

  Next, the work 2 is placed on the exposure stage 6 with the exposure surface on which the resist 5 is formed facing up, and is fixed by vacuum suction.

  From the above, the photomask 9 is disposed to face the work 2 so that the main surface of the photomask 9 and the main surface of the work 2 are parallel to each other.

  Next, when the exposure stage 6 is raised, the tip of the spacer 8 comes into contact with the resist 5 on the workpiece 2.

  When the exposure stage 6 is further raised, the work 2 and the photomask 9 are pressed through the spacer 8. Therefore, the portion along the workpiece 2 is pushed downward by the photomask 9 through the spacer 8, and the warpage of the workpiece 2 is corrected. And the photomask 9 and the workpiece | work 2 become a positional relationship shown in FIG. As shown in FIG. 9, a uniform gap is formed between the photomask 9 and the work 2 by the spacer 8.

  Next, exposure is performed with a uniform gap secured between the photomask 9 and the work 2. That is, exposure is performed while pressing the work 2 and the photomask 9. Light generated from the light source 10 passes through the photomask 9 and is selectively blocked by the mask pattern 4, and a pattern similar to the mask pattern 4 is transferred to the resist 5 formed on the workpiece 2.

  Subsequently, by developing the work 2, a resist pattern having a uniform width is formed on the exposed surface of the work 2.

<C. Effect>
Since the photomask according to the present embodiment is configured as described above, the warpage of the workpiece 2 can be corrected by the spacer 8 by pressing the workpiece 2 against the photomask 9.

  Then, exposure is performed in a state in which the warp is corrected, so that the gap between the work 2 and the photomask 9 is made uniform. Furthermore, the dimension of the exposed pattern has high in-plane uniformity.

  At the same time, a gap is forcibly formed in the work 2 and the photomask 9, and scratches and dirt on the mask pattern 4 can be prevented.

  In the photomask 9 according to the present embodiment, the spacers 8 are arranged on the outer peripheral portion of the mask pattern 4, but they may be arranged in a region other than the region where the mask pattern 4 is formed, such as on a dicing line. For example, by attaching the spacer 8 to the central portion of the main surface of the photomask 9, it is possible to correct the warp of the workpiece 2 that warps the convex shape.

  Further, the shape of the spacer 8 may be square, cylindrical, hemispherical or the like.

  According to the exposure method of the present embodiment, the work 2 can be exposed by forming a uniform gap between the photomask 9 and the work 2. Therefore, a resist pattern having a uniform dimension can be formed on the entire exposed surface of the workpiece 2.

<Embodiment 4>
<A. Photomask configuration>
FIG. 10 is a top view showing the structure of the photomask according to this embodiment. FIG. 11 is a cross-sectional view taken along the line DD of FIG.

  In the present embodiment, the photomask 9 is formed by cutting a part of the main surface of the photomask substrate 3 to form a recess. A mask pattern 4 is formed in the recess. That is, the photomask 9 according to the present embodiment includes a recess formed in the main surface, and the mask pattern 4 is formed in the recess.

  Therefore, the mask pattern 4 is formed at a position one step lower than a portion (outer peripheral portion) other than the concave portion of the main surface of the photomask base material 3.

  Here, in the photomask according to the present embodiment, a portion other than the concave portion of the main surface of the photomask base 3 corresponds to the spacer 8 (see FIG. 8).

<B. Exposure method>
Next, an exposure method using the photomask according to the present embodiment will be described with reference to FIG.

  FIG. 12 is a diagram showing the positional relationship between the photomask 9 and the workpiece 2 at the time of exposure.

  A workpiece 2 is arranged on the exposure stage 6. The workpiece 2 is arranged with the exposure surface on which the resist 5 is formed facing the light source 10. The work 2 is vacuum-sucked and fixed on the exposure stage 6.

  The photomask 9 is arranged on the work 2 so that the mask pattern 4 faces the exposure surface of the work 2.

Next, the exposure process of the workpiece 2 will be described in detail.
First, a photomask 9 in which a mask pattern 4 is formed in a recess is prepared.

  Next, the surface of the photomask 9 on which the photomask 4 is formed is placed in the exposure apparatus so as to face the exposure stage 6. Then, the photomask 9 is paralleled as in the first embodiment.

  Next, the work 2 is placed on the exposure stage 6 with the exposure surface on which the resist 5 is formed facing up, and is fixed by vacuum suction.

  Next, when the exposure stage 6 is raised, the outer peripheral portion of the photomask 9 comes into contact with the resist 5 on the workpiece 2. When the exposure stage 6 is further raised, the photomask 9 and the work 2 are pressed against each other. As a result, the warped portion of the work 2 is pushed downward by the outer peripheral portion of the photomask 9, and the warpage of the work 2 is corrected. As a result, a uniform gap is secured between the workpiece 2 and the photomask 9.

  Then, the workpiece 2 is exposed with a gap secured between the workpiece 2 and the photomask 9. Light generated from the light source 10 passes through the photomask 9 and is selectively blocked by the mask pattern 4, and a pattern similar to the mask pattern 4 is transferred to the resist 5 formed on the workpiece 2.

  Subsequently, by developing the work 2, a resist pattern having a uniform width is formed on the exposed surface of the work 2.

<C. Effect>
The photomask according to the present embodiment includes a recess on the main surface, and a mask pattern 4 is formed in the recess.

  That is, the mask pattern 4 on the photomask 9 is formed at a position one step lower than the surface of the photomask substrate 3. Therefore, even if the photomask 9 and the work 2 are brought into contact with each other, the mask pattern 4 does not come into contact with the work 2. As a result, it is possible to prevent the mask pattern 4 from being stained or defective without providing a spacer on the photomask 9.

  Further, by raising the exposure stage 6, the warp of the work 2 is corrected, and the gap between the photomask 9 and the work 2 is made uniform. Thereby, the dimension of the resist pattern formed on the workpiece 2 can obtain high in-plane uniformity.

FIG. 3 is a top view showing a workpiece according to the first embodiment. 2 is a cross-sectional view showing a workpiece according to Embodiment 1. FIG. 6 is a diagram for explaining the positional relationship between a photomask and a workpiece during exposure according to Embodiment 1. FIG. 6 is a top view showing a workpiece according to Embodiment 2. FIG. FIG. 6 is a cross-sectional view showing a workpiece according to a second embodiment. FIG. 10 is a diagram for explaining the positional relationship between a photomask and a workpiece at the time of exposure according to Embodiment 2. 6 is a top view showing a photomask according to Embodiment 3. FIG. 6 is a cross-sectional view showing a photomask according to Embodiment 3. FIG. FIG. 10 is a diagram for explaining the positional relationship between a photomask and a workpiece at the time of exposure according to Embodiment 3. 6 is a top view showing a photomask according to Embodiment 4. FIG. FIG. 6 is a cross-sectional view showing a photomask according to a fourth embodiment. It is a figure for demonstrating the positional relationship of the photomask at the time of exposure which concerns on Embodiment 4, and a workpiece | work.

Explanation of symbols

1 spacer, 2 workpiece, 3 photomask substrate, 4 mask pattern, 5 resist, 6 exposure stage, 7 ring resist pattern, 9 photomask.

Claims (9)

A work in which a resist pattern is formed on the main surface by photolithography,
A workpiece comprising a member having a certain height and disposed in a region other than a region where the resist pattern is formed on a photoresist formed on the main surface.   The workpiece according to claim 1, wherein a material of the member is a photoresist.   The workpiece according to claim 1, wherein the member is disposed on an outer peripheral portion of the main surface.   The workpiece according to claim 3, wherein the member is formed in a ring shape.   The workpiece according to claim 1, wherein the member is disposed at a central portion of the main surface. A photomask having a mask pattern formed on a main surface,
A photomask comprising a member disposed in a region other than the region where the mask pattern is formed and having a certain height. Comprising a recess formed in the main surface,
The mask pattern is formed in the recess,
The photomask according to claim 6, wherein the member is a portion other than the concave portion of the main surface. An exposure method using the workpiece according to any one of claims 1 to 5,
(A) preparing the workpiece according to any one of claims 1 to 5;
(B) a step of disposing the photomask above the workpiece so that the main surface of the photomask and the main surface of the workpiece are parallel to each other;
(C) pressing the workpiece and the photomask through the member;
(D) a step of exposing while pressing the work and the photomask;
An exposure method comprising: An exposure method using the photomask according to claim 6 or 7,
(A) preparing a photomask according to claim 6 or 7,
(B) disposing the photomask above the workpiece so that the main surface of the photomask and the main surface of the workpiece are parallel to each other;
(C) pressing the workpiece and the photomask through the member;
(D) a step of exposing while pressing the work and the photomask;
An exposure method comprising:

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