JP2006319157A - Method and apparatus for treating surface - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To avoid reduction of a wiring reliability by removing chlorine from the surface of a metallic layer including aluminum. <P>SOLUTION: The surface treating method for a substrate 10 having a metallic layer 22 containing aluminum formed thereon comprises the steps of accommodation step of accommodating the substrate 10 into a first processing chamber 1, etching at least part of the metallic layer 22 of the accommodated substrate 10 with use of a chlorine plasma 5, transporting the etched substrate 10 into a second processing chamber 9, and removing chlorine from the surface of the metallic layer 22 by applying an ultraviolet ray 15 onto the transported substrate 10. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a surface treatment method and a surface treatment apparatus, and more particularly to removal of chlorine generated on the surface of a metal layer.

  For example, an active matrix substrate constituting a liquid crystal display device forms various wirings and electrodes by dry etching using an etching gas after forming a resist layer on the surface of a metal layer formed on the substrate. Produced. Here, since it is desirable that the material constituting the wiring and the electrode has a low resistance, an aluminum film and an alloy film containing aluminum are preferably used. As the etching gas, a halogen gas such as a chlorine gas is often used. Therefore, in manufacturing an active matrix substrate, a metal layer containing aluminum is often dry-etched with chlorine gas.

  When the metal layer containing aluminum is dry-etched with chlorine gas as described above, aluminum trichloride is once generated on the surface of the metal layer. Since this aluminum trichloride has high hygroscopicity, when a dry-etched substrate is left as it is in the atmosphere, the aluminum trichloride reacts with moisture in the atmosphere, and hydrochloric acid is generated on the surface of the substrate. If it becomes so, the metal layer containing aluminum may corrode over time by hydrochloric acid and may be disconnected.

  Therefore, after the dry etching of aluminum and chlorine is completed, the Al—Cl bond on the surface of the metal layer is replaced with an Al—F bond using fluorine plasma made of carbon tetrafluoride or sulfur hexafluoride. The technique is often used.

Separately, Patent Document 1 discloses a surface treatment method for removing a halogen layer formed on the surface of an aluminum alloy thin film by heating with argon gas heated to about 300 ° C. or heating by infrared irradiation. It is disclosed.
JP-A-6-29264

  However, in the method using fluorine plasma as described above, since plasma is used, the wiring and electrodes are charged by ions and electrons existing in the plasma, or due to abnormal discharge generated due to electrical noise, the metal There is a problem that the film quality of the layer, the insulating layer, and the semiconductor layer deteriorates.

  Further, in the method disclosed in Patent Document 1, since the halogen layer is heated by irradiation with argon gas at about 300 ° C. or infrared irradiation, hillocks may be generated even if the halogen layer is cooled from the lower side. . For example, when a first metal layer, an insulating layer, and a second metal layer are sequentially stacked, if a hillock generated in the first metal layer protrudes from the insulating layer, the first metal layer and the second metal layer A short circuit occurs between the metal layers and the reliability of the wiring made of these metal layers is lowered.

  This invention is made | formed in view of this point, The place made into the objective is to suppress the fall of the reliability of wiring by removing the chlorine of the surface of the metal layer containing aluminum.

  In the present invention, chlorine on the surface of a metal layer containing aluminum is removed by irradiation with ultraviolet rays.

  Specifically, the surface treatment method according to the present invention is a surface treatment method of a substrate on which a metal layer containing aluminum is formed, and a housing step of housing the substrate in a treatment chamber; An etching step of etching at least a part of the metal layer of the accommodated substrate with chlorine plasma; and an ultraviolet irradiation step of irradiating the substrate with ultraviolet rays to remove chlorine on the surface of the metal layer. Features.

  According to the above method, in the etching step, aluminum trichloride is once generated on the surface of the metal layer by etching at least a part of the metal layer with chlorine plasma. However, in the ultraviolet irradiation process, by irradiating the surface of the metal layer on which the aluminum trichloride is formed with ultraviolet rays, Cl dissociation reaction proceeds at the Al-Cl bond, and chlorine constituting the aluminum trichloride is removed. Is done. In this ultraviolet irradiation, since the metal layer is not heated, the formation of hillocks in the aluminum constituting the metal layer is suppressed, and the deterioration of the film quality of the metal layer is suppressed. Therefore, by removing chlorine on the surface of the metal layer containing aluminum, a reduction in the reliability of the wiring is suppressed.

  The ultraviolet irradiation process may be performed after the etching process.

  According to the above method, after aluminum trichloride is once generated on the surface of the metal layer in the etching process, chlorine constituting the aluminum trichloride is removed in the ultraviolet irradiation process.

  The etching process and the ultraviolet irradiation process may be performed simultaneously.

  According to the above method, as soon as aluminum trichloride is formed on the surface of the metal layer in the etching process, chlorine constituting the aluminum trichloride is removed in the ultraviolet irradiation process. The time required for removal is reduced.

  In the ultraviolet irradiation step, a gas containing fluorine may be introduced into the processing chamber.

  According to the above method, by irradiating ultraviolet rays in the ultraviolet irradiation step, the Cl dissociation reaction in the Al—Cl bond proceeds, and at the same time, the gas containing fluorine is introduced into the processing chamber. The substitution reaction from the Cl bond to the Al—F bond proceeds. As a result, even if the substrate in which the substitution reaction is completed and the Al—F bond is formed is left in the atmosphere, hydrochloric acid is not generated on the surface of the metal layer on the substrate, so that the corrosion of the metal layer is suppressed. The

  In the ultraviolet irradiation step, the substrate is heated to 100 ° C. or less.

  According to the above method, since the hillocks are hardly formed at the heating temperature of 100 ° C. or less in the aluminum constituting the metal layer, the dissociation of Cl at the Al—Cl bond can be achieved by heating the substrate below that temperature. It becomes possible to increase the reaction rate of the reaction and / or the substitution reaction from the Al—Cl bond to the Al—F bond.

  The ultraviolet light source may be at least one of an argon excimer lamp, a krypton excimer lamp, a xenon excimer lamp, and a low-pressure mercury lamp.

  According to the above method, by irradiating ultraviolet rays with a general light source, the dissociation reaction of Cl in the Al—Cl bond proceeds, and chlorine on the surface of the metal layer is removed.

  The surface treatment apparatus according to the present invention is a surface treatment apparatus for performing a surface treatment of a substrate on which a metal layer containing aluminum is formed, the treatment chamber in which the substrate is accommodated, and the interior of the treatment chamber An etching means for etching the substrate accommodated in the substrate by chlorine plasma, and an ultraviolet irradiation means for irradiating the substrate accommodated in the processing chamber with ultraviolet rays.

  According to said structure, an aluminum trichloride is once produced | generated on the surface of a metal layer by etching at least one part of a metal layer with chlorine plasma by an etching means. However, by irradiating the surface of the metal layer on which the aluminum trichloride has been generated by the ultraviolet irradiation means, the dissociation reaction of Cl in the Al-Cl bond proceeds and the chlorine constituting the aluminum trichloride is removed. The In this ultraviolet irradiation, since the metal layer is not heated, the formation of hillocks in the aluminum constituting the metal layer is suppressed, and the deterioration of the film quality of the metal layer is suppressed. Therefore, by removing chlorine on the surface of the metal layer containing aluminum, a reduction in the reliability of the wiring is suppressed.

  A gas introducing means for introducing a gas containing fluorine into the processing chamber may be provided.

  According to the above configuration, by irradiating the ultraviolet rays by the ultraviolet means, the dissociation reaction of Cl in the Al-Cl bond proceeds, and at the same time, by introducing the gas containing fluorine into the processing chamber by the gas introducing means. The substitution reaction from the Al—Cl bond to the Al—F bond proceeds. As a result, even if the substrate in which the substitution reaction is completed and the Al—F bond is formed is left in the atmosphere, hydrochloric acid is not generated on the surface of the metal layer on the substrate, so that the corrosion of the metal layer is suppressed. The

  The processing chamber includes a first processing chamber in which an etching process is performed by the etching processing means, and a second processing chamber in which an ultraviolet ray is irradiated by the ultraviolet irradiation means and a gas containing fluorine is introduced by the gas introduction means. And may be configured.

  According to said structure, an aluminum trichloride is once produced | generated by the etching process in a 1st process chamber in the metal layer of the surface of a board | substrate. However, by irradiating the substrate with ultraviolet rays in the second processing chamber, the dissociation reaction of Cl in the Al—Cl bond of the generated aluminum trichloride proceeds, and a gas containing fluorine is introduced by the gas introduction means. As a result, the substitution reaction from the Al—Cl bond to the Al—F bond proceeds. Therefore, by processing the substrate in each of the first processing chamber and the second processing chamber, deterioration of the film quality of the metal layer containing aluminum is suppressed, chlorine on the metal layer is removed, and corrosion of the metal layer is caused. It is suppressed.

  The processing chamber may be provided with a substrate holding means for holding the substrate, and the substrate holding means may include a heating means for heating the substrate to 100 ° C. or lower.

  According to the above configuration, the hillocks are hardly formed at the heating temperature of 100 ° C. or less in the aluminum constituting the metal layer. Therefore, by heating the substrate below that temperature, the Al—Cl bond can be obtained. It becomes possible to increase the reaction rate of the Cl dissociation reaction and / or the substitution reaction from the Al—Cl bond to the Al—F bond.

  The ultraviolet irradiation means may include at least one of an argon excimer lamp, a krypton excimer lamp, a xenon excimer lamp, and a low-pressure mercury lamp.

  According to the above configuration, by irradiating ultraviolet rays from a general light source, the Cl dissociation reaction in the Al—Cl bond proceeds, and chlorine on the surface of the metal layer is removed.

  According to the surface treatment method of the present invention, chlorine on the surface of a metal layer containing aluminum can be removed by irradiation with ultraviolet rays, and deterioration of the film quality of the metal layer can be suppressed.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In addition, this invention is not limited to the following embodiment.
Embodiment 1 of the Invention
FIGS. 1-6 has shown the surface treatment apparatus 50a and the surface treatment method of Embodiment 1 which concern on this invention.

  First, the surface treatment apparatus 50a will be described. Here, FIG. 1 is a schematic cross-sectional view of the surface treatment apparatus 50a.

  The surface treatment apparatus 50a includes a first treatment chamber 1 in which an etching process is performed, a second treatment chamber 9 into which a gas containing fluorine is introduced while being irradiated with ultraviolet rays, and a first treatment chamber 1 and a second treatment chamber 9. And a gate valve 8 capable of opening and closing between the first processing chamber 1 and the second processing chamber 9.

  The first processing chamber 1 includes a susceptor (substrate holding unit) 14 that holds the substrate 10 and an etching unit 25 that performs an etching process on the substrate 10.

  The susceptor 14 includes a heater (heating means) 16 that heats the substrate 10 held on the upper surface thereof.

  The etching means 25 includes a dielectric window 4 provided so as to face the susceptor 14, a waveguide 3 connected to the dielectric window 4 for introducing microwaves into the first processing chamber 1, An etching gas inlet 2 is provided near the dielectric 4 to introduce an etching gas containing chlorine gas into the first processing chamber 1.

  On the other hand, the second processing chamber 9 includes ultraviolet irradiation means 26 for irradiating the substrate 10 held on the upper surface of the susceptor 14 with ultraviolet rays, and a fluorine-based gas introduction port (gas introduction) for introducing a gas containing fluorine therein. Means) 17. The susceptor 14 described above is configured to be transportable between the first processing chamber 1 and the second processing chamber 9.

  The ultraviolet irradiation means 26 includes a light transmission window 12 provided to face the susceptor 14, a lamp house 11 connected to the light transmission window, a light source 6 provided in the lamp house 11, and the lamp house 11. Is provided with a nitrogen gas inlet 13 for introducing nitrogen gas.

  The light source 6 includes, for example, an argon excimer lamp (wavelength 126 nm, photon energy 228 kcal / mol), a krypton excimer lamp (146 nm, 197 kcal / mol), a xenon excimer lamp (172 nm, 167 kcal / mol), a low-pressure mercury lamp (185 nm, 155 kcal / mol). mol, and 254 nm, 113 kcal / mol). In addition, in the dissociation reaction of Cl at the Al—Cl bond, it is necessary to give a photon energy larger than 101 kcal / mol at a wavelength shorter than 283 nm. Since the lamp house 11 is filled with nitrogen gas from the nitrogen gas inlet 13, attenuation of light from the light source 6 can be suppressed.

  Further, a vacuum pump 7 is connected to each of the first processing chamber 1 and the second processing chamber 9 so that the gas in each processing chamber can be exhausted.

  Next, the operation of the surface treatment apparatus 50a having the above configuration will be described.

  First, in the first processing chamber 1, for example, microwaves oscillated by a microwave oscillator such as a magnetron oscillation tube are introduced into the interior through the waveguide 3 and the dielectric window 4, thereby allowing the etching gas inlet 2. The introduced chlorine gas is turned into plasma, and the chlorine plasma 5 performs an etching process on the substrate 10 on the susceptor 14. At this time, the substrate 10 on the susceptor 14 is appropriately heated by the heater 16. Further, the product generated by the etching process, the remaining etching gas, and the like are discharged to the outside of the first processing chamber 1 by the vacuum pump 7.

  Then, after the etching process, the gate valve 8 is opened, and the substrate 10 on which the etching process has been performed is transferred to the second processing chamber 9. After that, the gate valve 8 is closed, and the substrate 10 is placed inside the second processing chamber 9. To accommodate.

  Subsequently, in the second processing chamber 9, the substrate 10 on the susceptor 14 is irradiated with the ultraviolet light 15 of the light source 6 through the light transmission window 12 and a gas containing fluorine is introduced from the fluorine-based gas introduction port 17. . At this time, the substrate 10 on the susceptor 14 is appropriately heated by the heater 16 as in the first processing chamber 1. Further, the product generated by the ultraviolet irradiation and the gas containing excess fluorine are discharged to the outside by the vacuum pump 7.

  Next, the surface treatment method by the surface treatment apparatus 50a having the above configuration will be described in detail step by step. The surface treatment method of the present embodiment includes the following preparation process, accommodation process, etching process, transport process, and ultraviolet irradiation process. 2 to 6 are schematic cross-sectional views of the substrate 10 in a typical process of the surface treatment method by the surface treatment apparatus 50a, and FIG. 5 is a schematic plan view of the substrate 10 corresponding to FIG. is there. In addition, the cross-sectional schematic diagram of FIG. 4 is a cross section of the horizontal direction of the schematic plan view of FIG.

<Preparation process>
The preparation process includes the following metal layer forming process and resist forming process.

~ Metal layer formation process ~
By depositing a metal thin film containing aluminum such as an aluminum film or an aluminum alloy film on the entire substrate on the glass substrate 20 by a sputtering method, a metal layer 21 having a thickness of about 200 nm is formed.

~ Resist formation process ~
After applying a photosensitive acrylic resin film (thickness of about 3 μm) or the like to the entire substrate on the metal layer 21 by spin coating, exposure and development are performed, thereby forming a resist layer 22 as shown in FIG. Form.

<Containment process>
The substrate 10 on which the resist layer 22 is formed is placed on the susceptor 14 in the first processing chamber 1. Then, the substrate 10 is heated to about 80 ° C. by the heater 16 of the susceptor 14.

<Etching process>
First, chlorine gas is introduced into the first processing chamber 1 from the etching gas inlet 2 at 500 sccm, and the pressure inside the first processing chamber 1 is maintained at 1.33 Pa. Here, sccm is “standard cc / min” and is a unit of flow rate at 0 ° C. at atmospheric pressure (1013 hPa).

  Next, a microwave having a frequency of 2.45 GHz and an output of 3 kW is introduced into the first processing chamber 1 through the waveguide 3 and the dielectric 4.

  As a result, chlorine plasma 5 is generated inside the first processing chamber 1, and the metal layer 21 on the substrate 10 is etched by ions or radicals in the chlorine plasma 5. At this time, an aluminum trichloride layer 23 is once formed on the side surface of the metal layer 21 exposed from the resist layer 22, as shown in FIG.

<Conveying process>
After the gate valve 8 is opened and the substrate 10 that has been etched in the first processing chamber 1 is placed on the susceptor 14 and transferred into the second processing chamber 9, the gate valve 8 is closed.

<Ultraviolet irradiation process>
First, for example, a gas containing fluorine such as carbon tetrafluoride or sulfur hexafluoride is introduced into the second processing chamber 9 from the fluorine-based gas introduction port 17 at 200 sccm, and the pressure inside the second processing chamber 9 is increased. Is maintained at 10 Pa.

  Next, the substrate 10 on the susceptor 14 is irradiated with ultraviolet rays 15 from the light source 13 through the light transmission window 12.

  As a result, Cl in the Al—Cl bond of the aluminum trichloride layer 23 is dissociated, and F is substituted to form an Al—F bond. As shown in FIGS. The removed substrate 10 is formed. Thereafter, as shown in FIG. 6, the resist layer 22 on the metal layer 21 is stripped with a stripping solution or the like.

  Since the surface (side surface) of the metal layer 21 in the surface-treated substrate 10 is formed with Al—F bonds instead of Al—Cl bonds, even if the substrate 10 is left in the atmosphere, The metal layer 21 on the substrate 10 is difficult to react with moisture in the atmosphere. Therefore, in the board | substrate 10, as shown in FIG. 5, the side end of the metal layer 21 is formed in linear form.

  On the other hand, when the Al—Cl bond is formed on the surface (side surface) of the metal layer 121, if the substrate 110 is left in the atmosphere, the reaction between Cl in the Al—Cl bond and moisture in the atmosphere causes a reaction. Hydrochloric acid is formed, and as shown in FIGS. 8 and 9, the metal layer 121 is corroded from the side surface.

  As described above, according to the first embodiment, in the etching process, at least a part of the metal layer 21 is etched with the chlorine plasma 5 so that the aluminum trichloride 23 is formed on the surface (side surface) of the metal layer 21. Once generated. However, in the ultraviolet irradiation step, by irradiating the surface of the metal layer 22 where the aluminum trichloride 23 is generated with the ultraviolet rays 15, the dissociation reaction of Cl in the Al—Cl bond proceeds to constitute aluminum trichloride. Chlorine can be removed. In addition, since the substrate 10 is not heated more than necessary by the irradiation of the ultraviolet rays 15, formation of hillocks in the aluminum constituting the metal layer 22 is suppressed, and deterioration of the film quality of the metal layer 22 can be suppressed. Therefore, by removing chlorine on the surface of the metal layer 22 containing aluminum, it is possible to suppress a decrease in the reliability of the wiring.

  In the ultraviolet irradiation step, the ultraviolet dissociation reaction proceeds in the Al—Cl bond by irradiating the ultraviolet ray 15, and simultaneously, a gas containing fluorine is introduced into the second processing chamber 9, so that Al— The substitution reaction from the Cl bond to the Al—F bond proceeds. Thereby, even if the substrate 10 in which the substitution reaction is completed and the Al—F bond is formed is left in the atmosphere, hydrochloric acid is not generated on the surface of the metal layer 22 on the substrate 10. Corrosion can be suppressed.

  Further, in the ultraviolet irradiation process, the dissociation reaction of Cl in the Al—Cl bond proceeds, and a part of the resist layer 22 used in the etching process can be decomposed and removed.

  Furthermore, since hillocks are not formed at a heating temperature of 100 ° C. or lower in the aluminum constituting the metal layer 21, heating the substrate to a temperature lower than that temperature, for example, about 80 ° C., allows Cl in the Al—Cl bond. The reaction rate of the dissociation reaction and / or the substitution reaction from the Al—Cl bond to the Al—F bond can be increased, and the efficiency of the surface treatment can be improved.

  In addition, since plasma is not used to remove chlorine on the surface of the metal layer 22, it is possible to suppress deterioration of the film quality of the metal layer 22 due to charging or abnormal discharge.

<< Embodiment 2 of the Invention >>
The present invention may be configured as shown in FIG. Here, FIG. 7 is a schematic cross-sectional view of the surface treatment apparatus 50b according to the present embodiment. In addition, in the following embodiment, the same code | symbol is attached | subjected about the same part as FIGS. 1-6, and the detailed description is abbreviate | omitted.

  The surface processing apparatus 50b irradiates the substrate 10 with ultraviolet rays, the processing chamber 18 in which the substrate 10 is accommodated, the susceptor 16 that holds the substrate 10, the etching means 25 that performs an etching process on the substrate 10, and the substrate 10. An ultraviolet irradiation means 26 and a fluorine-based gas inlet 17 for introducing a gas containing fluorine therein are provided.

  Note that the ultraviolet irradiation means 26 provided on the upper surface of the second processing chamber 9 in the first embodiment is provided on both side surfaces of the processing chamber 18 in the present embodiment. The etching gas inlet 2 also serves as the fluorine-based gas inlet 17.

  Next, the operation of the surface treatment apparatus 50b having the above configuration will be described.

  In the surface treatment apparatus 50b, for example, a microwave oscillated by a microwave oscillator such as a magnetron oscillation tube is introduced into the inside through the waveguide 3 and the dielectric window 4 to be introduced from the etching gas introduction port 2. The chlorine gas is turned into plasma and the substrate 10 on the susceptor 14 is etched by the chlorine plasma 5. At the same time, the ultraviolet light 15 from the light source 6 is irradiated onto the substrate 10 on the susceptor 14 through the light transmission window 12 and a gas containing fluorine is introduced from the fluorine-based gas inlet 17.

  Next, a surface treatment method using the surface treatment apparatus 50b having the above-described configuration will be described. The surface treatment method of the present embodiment includes a preparation process, an accommodation process performed after the preparation process, and an etching and ultraviolet irradiation process performed after the accommodation process. Here, the preparation process and the accommodation process are substantially the same as those in the first embodiment. Hereinafter, the etching and ultraviolet irradiation processes different from those of the first embodiment will be described.

<Etching and UV irradiation process>
First, chlorine gas is introduced into the processing chamber 18 from the etching gas inlet 2 and the fluorine-based gas inlet 17 at 500 sccm, for example, gas containing fluorine such as carbon tetrafluoride and sulfur hexafluoride is introduced at 200 sccm. The pressure inside the processing chamber 18 is maintained at 10 Pa.

  Next, a microwave having a frequency of 2.45 GHz and an output of 3 kW is introduced into the processing chamber 18 through the waveguide 3 and the dielectric 4, and at the same time, the ultraviolet rays 15 from the light source 6 are transmitted through the light transmission window 12. The substrate 10 on 14 is irradiated.

  As a result, chlorine plasma 5 is generated inside the processing chamber 18, and the metal layer 21 on the substrate 10 is etched by ions or radicals in the chlorine plasma 5. At this time, as soon as the aluminum trichloride layer 23 is once formed on the side surface of the metal layer 21 exposed from the resist layer 22, Cl in the Al—Cl bond of the aluminum trichloride layer 23 is dissociated by the ultraviolet rays 15. At the same time, F is substituted to form an Al—F bond, and as shown in FIG. 6, the substrate 10 from which the aluminum trichloride layer 23 and the resist layer 22 have been removed is formed.

  As described above, according to the second embodiment, as soon as aluminum trichloride is generated once on the surface of the metal layer by the etching process, chlorine constituting the aluminum trichloride is removed by irradiation with ultraviolet rays. The time required for removing chlorine on the surface of the metal layer can be shortened, and the efficiency of the surface treatment can be improved.

  As described above, the present invention is useful for an aluminum-based wiring formation technique because it can suppress the deterioration of the film quality of a metal layer containing aluminum and remove chlorine on the surface of the metal layer.

It is a cross-sectional schematic diagram of the surface treatment apparatus 50a which concerns on Embodiment 1 of this invention. It is a cross-sectional schematic diagram of the board | substrate 10 after the resist formation process of the surface treatment method which concerns on Embodiment 1 of this invention. It is a cross-sectional schematic diagram of the board | substrate 10 after the etching process of the surface treatment method which concerns on Embodiment 1 of this invention. It is a cross-sectional schematic diagram of the board | substrate 10 after the aluminum trichloride layer 23 was removed and the Al-F bond was formed in the ultraviolet irradiation process of the surface treatment method which concerns on Embodiment 1 of this invention. FIG. 5 is a schematic plan view of a substrate 10 corresponding to the schematic cross-sectional view of FIG. 4. It is a cross-sectional schematic diagram of the board | substrate 10 after the resist layer 22 was removed in the ultraviolet irradiation process of the surface treatment method which concerns on Embodiment 1 of this invention. It is a cross-sectional schematic diagram of the surface treatment apparatus 50b which concerns on Embodiment 2 of this invention. It is a plane schematic diagram of the board | substrate 110 where the metal layer 121 was corroded from the side surface. It is a cross-sectional schematic diagram of the board | substrate 110 corresponding to the plane schematic diagram of FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 1st process chamber 5 Chlorine plasma 6 Light source 9 2nd process chamber 10 Substrate 14 Susceptor (substrate holding means)
15 UV 16 heater (heating means)
17 Fluorine inlet (gas introduction means)
18 Processing chamber 21 Metal layer 22 Resist layer 23 Aluminum trichloride layer 25 Etching means 26 Ultraviolet irradiation means 50a, 50b Surface treatment apparatus

Claims (11)

A surface treatment method for a substrate on which a metal layer containing aluminum is formed,
A housing step of housing the substrate in a processing chamber;
An etching step of etching at least part of the metal layer of the substrate housed in the processing chamber with chlorine plasma;
A surface treatment method comprising: irradiating ultraviolet rays onto the substrate to remove chlorine on the surface of the metal layer. In the surface treatment method of Claim 1,
A surface treatment method comprising performing the ultraviolet irradiation step after the etching step. In the surface treatment method of Claim 1,
The surface treatment method characterized by performing the said etching process and the said ultraviolet irradiation process simultaneously. In the surface treatment method of Claim 1,
In the ultraviolet irradiation step, a surface treatment method, wherein a gas containing fluorine is introduced into the treatment chamber. In the surface treatment method of Claim 1,
In the ultraviolet irradiation step, the substrate is heated to 100 ° C. or less. In the surface treatment method of Claim 1,
The surface treatment method according to claim 1, wherein the ultraviolet light source is at least one of an argon excimer lamp, a krypton excimer lamp, a xenon excimer lamp, and a low-pressure mercury lamp. A surface treatment apparatus for performing surface treatment of a substrate on which a metal layer containing aluminum is formed,
A processing chamber in which the substrate is accommodated;
Etching means for etching the substrate accommodated in the processing chamber with chlorine plasma;
A surface treatment apparatus comprising ultraviolet irradiation means for irradiating ultraviolet rays onto a substrate housed in the processing chamber. In the surface treatment apparatus according to claim 7,
A surface treatment apparatus comprising gas introduction means for introducing a gas containing fluorine into the treatment chamber. In the surface treatment apparatus according to claim 7,
The processing chamber includes a first processing chamber in which an etching process is performed by the etching processing means, and a second processing chamber in which an ultraviolet ray is irradiated by the ultraviolet irradiation means and a gas containing fluorine is introduced by the gas introduction means. And a surface treatment apparatus. In the surface treatment apparatus according to claim 7,
The processing chamber is provided with substrate holding means for holding the substrate,
The surface treatment apparatus, wherein the substrate holding unit includes a heating unit that heats the substrate to 100 ° C. or less. In the surface treatment apparatus according to claim 7,
The surface treatment apparatus, wherein the ultraviolet irradiation means includes at least one of an argon excimer lamp, a krypton excimer lamp, a xenon excimer lamp, and a low-pressure mercury lamp.

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