JP2006310829A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2006310829A5 JP2006310829A5 JP2006094490A JP2006094490A JP2006310829A5 JP 2006310829 A5 JP2006310829 A5 JP 2006310829A5 JP 2006094490 A JP2006094490 A JP 2006094490A JP 2006094490 A JP2006094490 A JP 2006094490A JP 2006310829 A5 JP2006310829 A5 JP 2006310829A5
- Authority
- JP
- Japan
- Prior art keywords
- fuse element
- cutting
- pulse
- applying
- cut
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000011156 evaluation Methods 0.000 claims 4
- 239000004065 semiconductor Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 238000000034 method Methods 0.000 claims 2
- 230000000875 corresponding Effects 0.000 claims 1
Claims (4)
前記電気パルスを複数回印加する工程において、印加回数の増加と共に、電気パルスのパルス幅を長くするヒューズ素子の切断方法。 A fuse element formed on a semiconductor substrate, an electrical pulse is applied a plurality of times, seen including the step of cutting the fuse element,
A method of cutting a fuse element, wherein in the step of applying the electric pulse a plurality of times, the pulse width of the electric pulse is increased as the number of times of application is increased .
前記電気パルス電圧を複数回印加する工程において、印加回数の増加と共に、該ヒューズ素子に投入する1パルスあたりの電気エネルギを大きくするヒューズ素子の切断方法。A method for cutting a fuse element, wherein, in the step of applying the electric pulse voltage a plurality of times, the electric energy per pulse to be applied to the fuse element is increased as the number of times of application is increased.
1つの電気パルスを印加した後、次の電気パルスを印加する前に、前記ヒューズ素子が切断されたか否かを検出し、該ヒューズ素子の切断が検出されたら、電気パルスの印加を停止する工程を含む請求項1〜2のいずれかに記載のヒューズ素子の切断方法。 Applying the electrical pulse multiple times,
After applying one electric pulse, before applying the next electric pulse, detecting whether or not the fuse element is cut, and stopping the application of the electric pulse when the cut of the fuse element is detected The cutting method of the fuse element in any one of Claims 1-2 containing.
(b)前記工程aで前記評価用ヒューズ素子に与えられた電気エネルギの総量を求める工程と、
(c)前記工程bで求められた電気エネルギの総量に基づいて、前記評価用ヒューズ素子と同一の切断特性を持ったヒューズ素子を切断するための電気エネルギの総量に相当する切断閾値を決定する工程と、
(d)切断すべきヒューズ素子に印加する電気パルスの電圧及び電流の少なくとも一方、パルス幅、及びパルス数を、切断すべきヒューズ素子に投入される電気エネルギの総量が前記切断閾値以上になるように決定する工程と
を有するヒューズ素子切断手順の決定方法。 (A) applying an electrical pulse to the evaluation fuse element formed on the semiconductor substrate a plurality of times until the evaluation fuse element is cut;
(B) obtaining a total amount of electric energy given to the evaluation fuse element in the step a;
(C) Based on the total amount of electric energy obtained in the step b, a cutting threshold corresponding to the total amount of electric energy for cutting a fuse element having the same cutting characteristics as the evaluation fuse element is determined. Process,
(D) At least one of the voltage and current of the electric pulse applied to the fuse element to be cut, the pulse width, and the number of pulses so that the total amount of electric energy input to the fuse element to be cut is equal to or greater than the cut threshold. And determining the fuse element cutting procedure.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006094490A JP4946133B2 (en) | 2005-03-30 | 2006-03-30 | Method for determining fuse element cutting procedure |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005099404 | 2005-03-30 | ||
JP2005099404 | 2005-03-30 | ||
JP2006094490A JP4946133B2 (en) | 2005-03-30 | 2006-03-30 | Method for determining fuse element cutting procedure |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006310829A JP2006310829A (en) | 2006-11-09 |
JP2006310829A5 true JP2006310829A5 (en) | 2009-05-07 |
JP4946133B2 JP4946133B2 (en) | 2012-06-06 |
Family
ID=37477288
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006094490A Expired - Fee Related JP4946133B2 (en) | 2005-03-30 | 2006-03-30 | Method for determining fuse element cutting procedure |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4946133B2 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4871767B2 (en) * | 2007-03-20 | 2012-02-08 | 日本電信電話株式会社 | Manufacturing method of nanogap electrode |
US7405590B1 (en) * | 2007-07-18 | 2008-07-29 | Kabushiki Kaisha Toshiba | Systems and methods for controlling a fuse programming current in an IC |
JP5435713B2 (en) | 2009-07-23 | 2014-03-05 | ルネサスエレクトロニクス株式会社 | Semiconductor device manufacturing method, manufacturing program, and semiconductor device |
JP2011091447A (en) * | 2011-02-07 | 2011-05-06 | Renesas Electronics Corp | Method of fusing fuse |
JP2013037749A (en) | 2011-08-09 | 2013-02-21 | Fujitsu Ltd | Writing circuit, semiconductor integrated circuit, and writing method |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6246496A (en) * | 1985-08-23 | 1987-02-28 | Sony Corp | Writing method for fixed memory device |
JP3354033B2 (en) * | 1994-06-17 | 2002-12-09 | 株式会社豊田中央研究所 | Semiconductor device and manufacturing method thereof |
JP3104843B2 (en) * | 1994-08-19 | 2000-10-30 | 川崎製鉄株式会社 | Anti-fuse type semiconductor integrated circuit device |
-
2006
- 2006-03-30 JP JP2006094490A patent/JP4946133B2/en not_active Expired - Fee Related
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2006310829A5 (en) | ||
WO2008142919A1 (en) | Variable resistive element, method for manufacturing the variable resistive element and nonvolatile semiconductor storage device | |
JP2019500584A5 (en) | ||
WO2009134677A3 (en) | Reduction of forming voltage in semiconductor devices | |
WO2008046068A3 (en) | System and method for detection of multiple current limits | |
WO2018033897A3 (en) | Method and system for context sensitive intelligent virtual agents | |
JP2011501933A5 (en) | ||
TW200638419A (en) | Electric element, memory device, and semiconductor integrated circuit | |
JP2012249509A5 (en) | ||
JP2014226029A5 (en) | ||
DE60239298D1 (en) | DETECTING ELEVATOR BRAKING AND OTHER RESISTANCE BY MONITORING MOTORSTROM | |
WO2009116019A3 (en) | Method and apparatus for providing full logical connectivity in mpls networks | |
WO2008149605A1 (en) | Variable resistance element and semiconductor device comprising the same | |
WO2009075073A1 (en) | Nonvolatile memory device and fabrication method therefor | |
WO2012151566A3 (en) | Conductive filament based memory elements and methods with improved data retention and/or endurance | |
WO2008102718A1 (en) | Semiconductor memory device | |
WO2013071254A3 (en) | Circuit and method for generating a reference level for a magnetic random access memory element | |
WO2009010645A3 (en) | Method for measuring the threshold thickness of a layer of a purely resistive material, device for implementing same and use of said device in an exhaust pipe | |
JP2008532043A5 (en) | ||
JP2016015390A5 (en) | ||
JP2016041574A5 (en) | ||
WO2009040999A1 (en) | Crosscut testing method, and cross-cut testing device | |
WO2009078172A1 (en) | Nonvolatile memory element, process for producing the nonvolatile memory element, and nonvolatile memory device using the nonvolatile memory element | |
JP2005530696A5 (en) | ||
JP2005093496A5 (en) |