JP2006278387A - Method and device for cleaning substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To appropriately and efficiently remove particles sticking to a substrate by utilizing the gas to which ultrasonic vibration is applied. <P>SOLUTION: In a substrate cleaning device, a diluted chemical liquid is applied on the upper surface of a substrate 9 by a chemical liquid applying part 44, so that light etching is applied on the upper surface of the substrate 9 to remove a natural oxide film on the substrate 9, reducing the sticking force of the particles sticking to the substrate 9. Then the air applied with ultrasonic vibration is jetted from an ultrasonic wave applying part of a dry nozzle 46 that moves along the upper surface of the substrate 9 toward the upper surface of the substrate 9 after light etching is applied. So the particles are separated from the substrate 9 and mixed with the diluted chemical liquid remaining on the substrate 9, and are removed from the substrate 9 along with the chemical liquid. Thus, in the substrate cleaning device, the air which is applied with ultrasonic vibration is utilized to appropriately and efficiently remove the particles deposited on the substrate 9. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a technique for cleaning a substrate.

  Conventionally, when a semiconductor substrate or a glass substrate (hereinafter referred to as “substrate”) is cleaned, wet cleaning using a cleaning liquid is performed. On the other hand, a technique (so-called ultrasonic dry cleaning) that cleans a substrate by using a dust removing device that sucks gas from the main surface of the substrate while jetting air to which the ultrasonic vibration is applied toward the main surface of the substrate. In Patent Documents 1 and 2, various methods for improving the cleaning effect in the dust removing apparatus are proposed.

In Patent Document 3, after light etching is performed on the surface of a semiconductor substrate that has been left for a long period of time, the semiconductor substrate is immersed in a cleaning solution to impart megasonics, whereby particles adhering to the surface of the semiconductor substrate are removed. A technique for removing it has been proposed.
JP 7-68226 A JP 11-235559 A Japanese Patent Laid-Open No. 7-22365

  By the way, in recent years, the amount of processing liquid used, such as cleaning liquid, has increased due to the complexity of the manufacturing process of semiconductor products. From the viewpoint of processing liquid cost and management, reduction in the amount of cleaning liquid used in wet cleaning is required. Yes. Therefore, it is conceivable to employ ultrasonic dry cleaning that does not use a cleaning solution for cleaning the semiconductor substrate. For example, particles that are surrounded by a natural oxide film on the surface of the semiconductor substrate have adhesion to the semiconductor substrate. When strong particles are present, it becomes difficult to remove the particles under normal conditions in the dust removing device. In addition, if the particles are simply adhered to the semiconductor substrate, it is possible to improve the particle removal capability by increasing the amount of air ejected from the dust removal device or increasing the ultrasonic output. However, there is a possibility that the fine pattern formed on the semiconductor substrate may be damaged (that is, the cleaning effect and the influence on the pattern are in a so-called trade-off relationship).

  The present invention has been made in view of the above problems, and an object of the present invention is to appropriately and efficiently remove particles adhering to a substrate using a gas to which ultrasonic vibration is applied.

  The invention according to claim 1 is a substrate cleaning apparatus for cleaning a substrate, a holding unit for holding the substrate, and a pretreatment means for performing a pretreatment for reducing the adhesion of particles adhering to the main surface of the substrate. And an ultrasonic wave application unit that ejects a gas to which ultrasonic vibration is applied toward the main surface after the pretreatment.

  A second aspect of the present invention is the substrate cleaning apparatus according to the first aspect, wherein the pretreatment means applies a diluted chemical to the main surface to perform light etching on the main surface. It has a chemical application part.

  A third aspect of the present invention is the substrate cleaning apparatus according to the second aspect of the present invention, wherein a rinsing liquid is applied to the main surface immediately after the light etching is performed, and a chemical solution remaining on the main surface is provided. A rinsing liquid application unit that replaces the rinsing liquid with the rinsing liquid is further provided.

  The invention according to claim 4 is the substrate cleaning apparatus according to claim 2 or 3, further comprising means for removing the liquid remaining on the main surface after the ejection of gas from the ultrasonic wave application unit. .

  A fifth aspect of the present invention is the substrate cleaning apparatus according to any one of the second to fourth aspects, wherein the pretreatment means applies the diluted chemical solution to the main surface by the chemical solution application unit. And an ultraviolet irradiation unit for irradiating the main surface with ultraviolet rays.

  The invention according to claim 6 is the substrate cleaning apparatus according to claim 1, further comprising a suction unit that is provided in the vicinity of the ultrasonic wave application unit, and sucks gas from the main surface, The pretreatment means includes an ultraviolet irradiation unit that irradiates the main surface with ultraviolet rays.

  The invention according to claim 7 is a substrate cleaning method for cleaning a substrate, wherein a pretreatment step for performing a pretreatment for reducing adhesion of particles adhering to a main surface of the substrate, and the main treatment after the pretreatment are performed. An ultrasonic wave application step of ejecting a gas to which ultrasonic vibration is applied toward the surface.

  The invention according to claim 8 is the substrate cleaning method according to claim 7, wherein the pretreatment step applies light etching to the main surface by applying a diluted chemical to the main surface. It has a chemical solution application step.

  The invention according to claim 9 is the substrate cleaning method according to claim 8, wherein a rinse liquid is applied to the main surface immediately after the light etching is performed, and the chemical solution remaining on the main surface is provided. A rinsing liquid applying step of substituting the rinsing liquid with the rinsing liquid.

  A tenth aspect of the present invention is the substrate cleaning method according to the eighth or ninth aspect, further comprising a step of removing the liquid remaining on the main surface after the ultrasonic wave applying step.

  Invention of Claim 11 is a substrate cleaning method in any one of Claim 8 thru | or 10, Comprising: The said pretreatment process irradiates the said main surface with an ultraviolet-ray irradiation before the said chemical | medical solution provision process It further has a process.

  The invention according to claim 12 is the substrate cleaning method according to claim 7, further comprising a suction step of sucking a gas from the main surface in parallel with the ultrasonic wave application step, and the pretreatment The step includes an ultraviolet irradiation step of irradiating the main surface with ultraviolet rays.

  According to the present invention, by reducing the adhesion force of particles adhering to the main surface of the substrate, particles can be removed appropriately and efficiently using a gas to which ultrasonic vibration is applied.

  Further, in the inventions of claims 2 and 8, by performing light etching on the main surface of the substrate, the adhesion force of particles adhering to the main surface of the substrate can be easily reduced. In this invention, the main surface of the substrate can be surely dried while preventing damage to the pattern on the substrate.

  In the inventions of claims 5, 6, 11 and 12, by removing or decomposing organic substances present on the main surface of the substrate, the adhesion force of particles adhering to the main surface of the substrate can be easily reduced. .

  FIG. 1 is a plan view showing a configuration of a substrate cleaning apparatus 1 according to the first embodiment of the present invention. The substrate cleaning apparatus 1 includes an indexer 2 on which a cassette 91 containing a semiconductor substrate 9 is placed, an ultraviolet irradiation unit 3 that irradiates the substrate 9 with ultraviolet rays, cleaning the substrate 9 using a chemical solution, and a method described later. And a transfer robot 5 that transfers the substrate 9 between the indexer 2, the ultraviolet irradiation unit 3, and the cleaning unit 4. The cleaning unit 4 has a chamber main body 41, and a loading / unloading port used for loading and unloading the substrate 9 with respect to the cleaning unit 4 is provided at a position of the chamber main body 41 facing the transfer robot 5. Although details of the cleaning unit 4 will be described below, since the ultraviolet irradiation unit 3 is used in another processing example to be described later, the configuration of the ultraviolet irradiation unit 3 will be described in another processing example.

  FIG. 2 is a plan view showing the configuration of the cleaning unit 4 and shows the inside of the chamber body 41. FIG. 3 is a cross-sectional view of the cleaning unit 4 at a position indicated by an arrow AA in FIG. As shown in FIG. 3, the cleaning unit 4 is in contact with the lower main surface of the substrate 9 to hold the substrate 9, and the holding unit 42 is disposed inside, and a drainage port and A cup 43 having an exhaust port (not shown) is provided. The holding part 42 is connected to the motor 422 via the shaft 421, and the holding part 42 rotates around the shaft 421 when the motor 422 is driven. When the substrate 9 is carried in and out of the chamber body 41, the shaft 421 and the holding unit 42 are raised and the substrate 9 is transferred between the transfer robot 5 and the holding unit 42.

  As shown in FIG. 2, the cleaning unit 4 rinses the upper surface of the substrate 9 with a chemical solution application unit 44 that applies a diluted chemical solution (hereinafter referred to as “diluted chemical solution”) to the upper surface that is the upper main surface of the substrate 9. A rinsing liquid application unit 45 for applying a liquid (for example, pure water), a long dry nozzle unit 46 extending in the Y direction in FIG. 2 along the main surface of the substrate 9, and supporting both ends of the dry nozzle unit 46 while drying. A nozzle unit moving mechanism 47 that moves (scans) the nozzle unit 46 in the X direction in FIG. 2 along the main surface of the substrate 9 is further provided.

The chemical solution application unit 44 includes a chemical solution nozzle 441 provided above the holding unit 42 and a chemical solution supply unit 442 that supplies a diluted chemical solution to the chemical solution nozzle 441. Here, the diluted chemical solution is, for example, a mixed solution obtained by diluting a predetermined concentration of hydrofluoric acid (HF) for semiconductors with water (H ₂ O) at a ratio of 1: 100 or buffered hydrofluoric acid (BHF). It is a mixed solution or the like diluted. The rinse liquid application unit 45 includes a rinse liquid nozzle 451 provided above the holding unit 42 and a rinse liquid supply unit 452 that supplies a rinse liquid to the rinse liquid nozzle 451. An air supply unit 461 and a pump 462 are connected to the dry nozzle unit 46. The rinsing liquid application unit 45 is used in another processing example that will be described after this processing example.

  FIG. 4 is a cross-sectional view showing a lower portion of the dry nozzle portion 46. The dry nozzle portion 46 is provided with a suction portion 463 connected to a pump 462 (see FIG. 2). The suction part 463 has an elongated suction port 464 that faces the substrate 9 and extends in the Y direction in FIG. 4, and gas is sucked from the upper surface of the substrate 9 through the suction port 464. In addition, two ultrasonic wave application units 465 are provided at the end of the dry nozzle unit 46 on the substrate 9 side with the suction port 464 in the X direction, and each of the ultrasonic wave application units 465 has an air supply unit 461 (see FIG. 2) is connected. Each ultrasonic wave imparting unit 465 includes a long and narrow jet port 466 that faces the substrate 9 and extends in the Y direction, and a pair of ultrasonic generators 467 that are provided across the jet ports 466 in the X direction. Air to which ultrasonic vibration is applied by the sound wave generator 467 is ejected toward the upper surface of the substrate 9 through the ejection port 466. The dry nozzle portion 46 is provided close to the substrate 9, and the distance between the lower end surface of the dry nozzle portion 46 and the upper surface of the substrate 9 is, for example, less than 10 millimeters (mm), preferably 5 mm or less. Is appropriately determined based on the flatness of the substrate 9 as long as the dry nozzle portion 46 does not contact the substrate 9. Note that the air outlet 466 and the gas suction port 464 are longer than the diameter of the substrate 9 in the Y direction perpendicular to the moving direction of the dry nozzle portion 46.

  FIG. 5 is a diagram showing a flow of processing in which the substrate cleaning apparatus 1 cleans the substrate 9. In the substrate cleaning apparatus 1 of FIG. 1, first, the substrate 9 to be processed is taken out by the transfer robot 5 from the loading cassette 91 placed on the indexer 2. Then, the substrate 9 is transported into the cleaning unit 4 via the carry-in / out port of the chamber body 41, placed on the holding unit 42 of FIG. 3, and held by vacuum suction. Subsequently, when the motor 422 is driven, the substrate 9 starts rotating at a constant speed, and the diluted chemical solution is discharged from the chemical solution nozzle 441 onto the upper surface of the substrate 9 for a fixed time (for example, 10 seconds) (step). S11) The natural oxide film on the upper surface of the substrate 9 is removed by a predetermined amount (for example, several angstroms). That is, light etching is performed on the upper surface of the substrate 9. At this time, the dry nozzle unit 46 stands by on the (−X) side of the substrate 9.

  Subsequently, the rotation of the substrate 9 is stopped, the driving of the ultrasonic generator 467 and the ejection of air are started in the dry nozzle portion 46 of FIG. 4, and the dry nozzle portion 46 is (+ X) by the nozzle portion moving mechanism 47. Start moving at a constant speed in the direction. In addition, gas suction by the suction unit 463 is also started (step S12).

  At this time, since the air to which the ultrasonic vibration is applied is ejected like an air knife toward the upper surface of the substrate 9, the diluted chemical remaining on the substrate 9 becomes (+ X) as the dry nozzle portion 46 moves. It moves in the direction and is removed to the outside of the substrate 9 at the end of the substrate 9 on the (+ X) side. Further, the upper surface of the substrate 9 is caused by ultrasonic vibrations applied by particles to particles adhering to the substrate 9 (for example, fine particles of silicon compound such as silicon or silicon nitride, or other inorganic fine particles). Particles that are easily separated from the substrate and removed are removed together with the diluted chemical solution that is moved by being pushed by the air on the substrate 9, or the gas around the suction port 464 (from the ultrasonic wave application unit 465 by the suction unit 463). The air is sucked together and removed.

  When the dry nozzle portion 46 moves to the (+ X) side of the substrate 9, the moving direction of the dry nozzle portion 46 is reversed. Similarly, while the dry nozzle portion 46 moves in the (−X) direction, particles that are peeled off and separated from the upper surface of the substrate 9 by the air from the ultrasonic wave applying portion 465 are sucked by the suction portion 463, or It is removed together with the diluted chemical that moves on the substrate 9. In the substrate cleaning apparatus 1, the dry nozzle unit 46 reciprocates on the substrate 9 a predetermined number of times, thereby removing the diluted chemical remaining on the upper surface of the substrate 9.

  When the ultrasonic dry cleaning by the dry nozzle unit 46 is completed, the substrate 9 is taken out of the chamber body 41 by the transfer robot 5 and returned to the cassette 91 for unloading the indexer 2. In the substrate cleaning apparatus 1, the above process is repeated for the other substrates 9 in the loading cassette 91, and when the cleaning of all the substrates 9 is completed, the process in the substrate cleaning apparatus 1 is completed.

  As described above, in the substrate cleaning apparatus 1 of FIG. 1, air to which ultrasonic vibrations are applied is directed from the ultrasonic wave application unit 465 toward the upper surface of the substrate 9 after being subjected to light etching by the chemical solution application unit 44. Erupted. Here, when the periphery of the upper surface of the substrate 9 is surrounded by a natural oxide film or there are particles taken into the natural oxide film, it is attempted to remove the particles only with air to which ultrasonic vibration is applied. Therefore, it is necessary to increase the ultrasonic output or increase the amount of air ejection. However, when the ultrasonic output is increased, the pattern formed on the upper surface of the substrate 9 may be damaged, and the particles are not necessarily removed only by increasing the ejection amount. On the other hand, the substrate cleaning apparatus 1 performs light etching on the substrate 9 to remove the natural oxide film on the upper surface of the substrate 9 to isolate the particles or reduce the natural oxide film to expose the particles. Thus, the adhesion force of particles adhering to the substrate 9 can be easily reduced. As a result, particles can be appropriately and efficiently removed using the air to which the ultrasonic vibration is applied without giving an excessive ultrasonic vibration or increasing the amount of air jetted more than necessary.

  Further, while moving the ultrasonic wave applicator 465 relative to the substrate 9 along the upper surface of the substrate 9, removal of particles adhering to the upper surface of the substrate 9 using the air from the ultrasonic wave applicator 465, By performing the removal of the diluted chemical solution on the upper surface of the substrate 9 in parallel, the processing related to the cleaning of the substrate 9 can be performed efficiently. Furthermore, since the amount of chemical solution used in the substrate cleaning apparatus 1 is small, the processing solution (chemical solution, cleaning solution, etc., which is a raw solution) is used as compared with a case where cleaning with equivalent cleanliness is realized only by wet cleaning using the cleaning solution. The amount used can be reduced, and the cost required for the substrate cleaning process can be reduced.

  Next, another example of the substrate cleaning process using the rinse liquid applying unit 45 in the substrate cleaning apparatus 1 will be described. FIG. 6 is a diagram illustrating another example of a processing flow in which the substrate cleaning apparatus 1 cleans the substrate 9. In the substrate cleaning process according to another example, when light etching is performed on the upper surface of the substrate 9 in the cleaning unit 4 of FIG. 2 (step S11), the rinse liquid nozzle 451 is kept in a state where the rotation of the substrate 9 is continued. The rinsing liquid is discharged from the substrate toward the upper surface of the substrate 9 for a predetermined time (step S11a). Thereby, the diluted chemical solution on the upper surface of the substrate 9 is replaced with the rinse solution.

  Then, when the dry nozzle portion 46 reciprocates in the X direction above the substrate 9, particles separated from the upper surface of the substrate 9 are mixed into the rinse liquid that is moved by the air from the ultrasonic wave applying portion 465, or Then, it is sucked and removed by the suction part 463 (step S12). As described above, in the substrate cleaning process according to another example, the rinse liquid is applied to the upper surface of the substrate 9 immediately after the light etching is performed, and the diluted chemical remaining on the substrate 9 is replaced with the rinse liquid. In addition, while accurately controlling the amount of light etching by the diluted chemical solution from the chemical solution application unit 44, the adhesion force of particles adhering to the upper surface of the substrate 9 is reduced, and appropriate and efficient by the air to which ultrasonic vibration is applied Good particle removal is achieved.

  Next, still another example of the substrate cleaning process in the substrate cleaning apparatus 1 will be described. FIG. 7 is a view showing still another example of the flow of processing in which the substrate cleaning apparatus 1 cleans the substrate 9. In the present processing example, as in the case of FIG. 6, after the application of the diluting chemical solution and the application of the rinsing liquid are performed (steps S11 and S11a), the dry nozzle section 46 is performed a smaller number of times than the case of FIGS. Is reciprocatingly moved on the substrate 9 (the dry nozzle portion 46 may only pass once on the substrate 9), while air is ejected from the ultrasonic wave application portion 465 and gas is sucked by the suction portion 463. Performed (step S12). In addition, after the reciprocating movement of the dry nozzle portion 46, the rinsing liquid remains in a mottled manner on the upper surface of the substrate 9.

  Subsequently, the motor 422 is driven again, and the substrate 9 rotates at a higher speed than when the diluted chemical solution and the rinse solution are applied (step S13). As a result, even if the fine pattern formed on the substrate 9 is very fragile, air from the ultrasonic wave application unit 465 is jetted onto the upper surface of the substrate 9 for a longer time than necessary. While the pattern formed on the upper surface of the substrate 9 is prevented from being damaged, the rinse liquid remaining on the upper surface of the substrate 9 can be removed by the rotation of the substrate 9 and the substrate 9 can be dried reliably. Note that step S11a of FIG. 7 may be omitted, and the diluted chemical remaining on the upper surface of the substrate 9 may be reliably removed by the rotation of the substrate 9 in step S13.

  Next, a processing example using the ultraviolet irradiation unit 3 shown in FIG. 1 will be described. The ultraviolet irradiation unit 3 shown in FIG. 1 has a stage 31 on which a substrate 9 to be carried is placed, and a plurality of lamps 32 provided above the substrate 9 held on the stage 31. Then, for example, ultraviolet rays having wavelengths of 185 nanometers (nm) and 254 nm are irradiated toward the upper surface of the substrate 9. The plurality of lamps 32 are covered with a cover 33, and ultraviolet rays from the lamps 32 are prevented from leaking out of the cover 33.

  FIG. 8 is a diagram showing still another example of the flow of processing in which the substrate cleaning apparatus 1 cleans the substrate 9. When the substrate cleaning apparatus 1 cleans the substrate 9 using the ultraviolet irradiation unit 3, the substrate 9 to be processed is taken out from the loading cassette 91 by the transfer robot 5 and is placed on the stage 31 of the ultraviolet irradiation unit 3. Placed on. Then, emission of ultraviolet rays from the plurality of lamps 32 is started, and the upper surface of the substrate 9 is irradiated with ultraviolet rays for a predetermined time, and organic substances present on the upper surface of the substrate 9 are decomposed (or removed) (step S10).

  When the ultraviolet irradiation is completed, the substrate 9 is taken out from the ultraviolet irradiation unit 3 by the transfer robot 5 and transferred onto the holding unit 42 of the cleaning unit 4. Then, while the dry nozzle unit 46 reciprocates above the substrate 9, particles are peeled off from the upper surface of the substrate 9 by the air from the ultrasonic wave application unit 465, separated from the upper surface of the substrate 9, and sucked by the suction unit 463. Then, the substrate 9 is removed (that is, ultrasonic dry cleaning is performed) (step S12). At this time, the reattachment of particles to the substrate 9 is suppressed due to the decomposition of the organic matter on the upper surface of the substrate 9. When the predetermined number of reciprocating movements of the dry nozzle section 46 are completed, the substrate 9 is taken out from the cleaning section 4 and conveyed into the unloading cassette 91, and the substrate cleaning process is completed.

  As described above, in the processing example of FIG. 8 in the substrate cleaning apparatus 1, the upper surface of the substrate 9 is irradiated with ultraviolet rays by the ultraviolet irradiation unit 3. Thereby, even when the particles are firmly attached by the organic matter existing on the upper surface of the substrate 9, the organic matter can be removed or decomposed to easily reduce the adhesion force of the particles. In parallel with the ejection of air from the ultrasonic wave application unit 465 to the upper surface of the substrate 9, the gas containing the air from the ultrasonic wave application unit 465 is formed by the suction unit 463 provided close to the ultrasonic wave application unit 465. By sucking from the upper surface of the substrate 9, particles can be removed appropriately and efficiently by using air to which ultrasonic vibration is applied without affecting the pattern formed on the upper surface of the substrate 9. . Further, in this processing example, even if it is not preferable that the substrate 9 to be cleaned is subjected to wet processing, particles on the substrate 9 can be removed without using a liquid such as a diluted chemical solution.

  Next, a more preferable processing example in which the processing in FIGS. 5 to 8 is combined will be described with reference to the processing flow shown in FIG. In this processing example, after the ultraviolet irradiation unit 3 irradiates the upper surface of the substrate 9 with ultraviolet rays for a predetermined time (step S10), the cleaning unit 4 applies a diluted chemical solution to the upper surface of the substrate 9 to perform light etching. (Step S11) Then, the diluted chemical solution on the upper surface of the substrate 9 is replaced with a rinse solution (Step S11a). Subsequently, when the dry nozzle unit 46 moves above the substrate 9, particles separated from the upper surface of the substrate 9 by the air from the ultrasonic wave application unit 465 are mixed into the rinse liquid that moves together with the dry nozzle unit 46. Or suctioned and removed by the suction unit 463 (step S12). Then, the motor 422 is driven again to rotate the substrate 9 at a higher speed than when the diluted chemical solution and the rinse solution are applied (step S13), and the rinse solution remaining on the upper surface of the substrate 9 is removed.

  As described above, in the processing example of FIG. 9 in the substrate cleaning apparatus 1, after the organic substance existing on the upper surface of the substrate 9 is removed or decomposed by combining the processing by the ultraviolet irradiation unit 3 and the processing by the chemical solution applying unit 44. By removing the natural oxide film on 9, it is possible to easily realize further reduction of the adhesion force of particles adhering to the upper surface of the substrate 9. As a result, it is possible to remove particles appropriately and efficiently using air to which ultrasonic vibration is applied, and to clean the upper surface of the substrate 9 so as to have a higher cleanliness.

  FIG. 10 is a plan view showing the configuration of the substrate cleaning apparatus 1a according to the second embodiment of the present invention. FIG. 11 shows the substrate cleaning apparatus 1a of FIG. 10 from the (−Y) side in FIG. It is a front view which shows the mode at the time of seeing facing the + Y) direction. In the substrate cleaning apparatus 1a of FIG. 10, the substrate 9a to be cleaned is a rectangular glass substrate for a flat display device. The substrate cleaning apparatus 1a includes a substrate moving mechanism 61 that moves the substrate 9a. The substrate moving mechanism 61 includes a plurality of rollers 611 that extend in the Y direction in FIG. 10 and are arranged in the X direction in FIG. . By rotating the roller 611 to which a motor (not shown) is connected among the plurality of rollers 611, the substrate 9a moves in the (+ X) direction while being supported while being supported from the lower surface. Above the substrate moving mechanism 61, an ultraviolet irradiation unit 62, a wet cleaning unit 63, a dry cleaning unit 64, and a heater 65 are provided in that order in the traveling direction ((+ X) direction) of the substrate 9.

  Next, the flow of processing for cleaning the substrate 9a by the substrate cleaning apparatus 1a will be described according to FIG. 9 while explaining the respective components of the substrate cleaning apparatus 1a. First, when the substrate 9 a is transported to the (−X) side of the substrate moving mechanism 61, the substrate 9 a starts to move in the (+ X) direction and is carried into the ultraviolet irradiation unit 62. The ultraviolet irradiation unit 62 has a plurality of long lamps 621 each emitting ultraviolet rays and extending in the Y direction, and the upper surface of the substrate 9a passing below is irradiated with ultraviolet rays (step S10). Thereafter, the substrate 9 a continuously moves to a position facing the wet cleaning unit 63.

  A chemical solution application unit 631 that applies a diluted chemical solution to the substrate 9a is provided at the (−X) side portion of the wet cleaning unit 63, and the diluted chemical solution continues from the chemical solution nozzle 632 of the chemical solution application unit 631 to the upper surface of the substrate 9a. Is discharged. The discharge port of the chemical solution application unit 631 is elongated in the Y direction, and the diluted chemical solution is sequentially applied to each part on the upper surface of the substrate 9a as the substrate 9a moves. As a result, light etching is performed on the upper surface of the substrate 9a (for example, the main body of the glass substrate or a predetermined film formed on the substrate 9a is etched by several angstroms) (step S11).

  The portion of the substrate 9a to which the diluted chemical solution is applied moves to a position below the rinse liquid application portion 633 provided at the (+ X) side portion of the wet cleaning unit 63, and the substrate is removed from the rinse liquid nozzle 634 of the rinse liquid application unit 633. The rinse liquid is continuously discharged on the upper surface of 9a. The discharge port of the rinse liquid nozzle 634 is also elongated in the Y direction, and the rinse liquid is sequentially applied to each part on the upper surface of the substrate 9a as the substrate 9a moves, and the diluted chemical remaining on the substrate 9a becomes the rinse liquid. Replacement is performed (step S11a). A liquid recovery unit 635 that recovers the used liquid is provided at a position facing the wet cleaning unit 63 via the substrate moving mechanism 61.

  The substrate 9 a that has passed under the wet cleaning unit 63 moves to the vicinity of the dry nozzle unit 641 of the dry cleaning unit 64. The dry nozzle portion 641 has the same configuration as the dry nozzle portion 46 of FIG. 4, and air to which ultrasonic vibration is applied toward the upper surface of the substrate 9 a is ejected by each ultrasonic wave applying portion of the dry nozzle portion 641. At the same time, gas is sucked from the upper surface of the substrate 9a by the suction portion (step S12). At this time, particles adhering to the substrate 9a are separated from the upper surface of the substrate 9a by the air from the ultrasonic wave application unit and mixed into the rinse liquid on the substrate 9a or sucked together with the gas around the suction port. Further, the rinsing liquid on the substrate 9a is moved relative to the substrate 9a in the (−X) direction with the movement of the substrate 9a by the air from the ultrasonic wave application unit, and the end on the (−X) side Is removed to the outside of the substrate 9a. A liquid recovery unit 642 that recovers the liquid removed from the substrate 9a is provided at a position facing the dry cleaning unit 64 via the substrate moving mechanism 61.

  Subsequently, the substrate 9a moves below the heater 65, and the rinse liquid remaining on the upper surface of the substrate 9a is removed by the heat applied from the heater 65 (step S13). Thereby, the upper surface of the substrate 9 is reliably dried, and the process of cleaning the substrate 9a is completed. Actually, the above process is performed on a plurality of substrates 9a in parallel, and the efficiency of the process related to the cleaning of the substrate is improved.

  As described above, in the substrate cleaning apparatus 1 a of FIG. 10, the organic substance on the upper surface of the substrate 9 a is removed or decomposed by the ultraviolet irradiation by the ultraviolet irradiation unit 62 on the glass substrate 9 a, and then the chemical solution applying unit 631. Diluted drug solution is applied. Here, in the glass substrate 9a, the particles may be electrically adsorbed on the upper surface, and even in such a case, the electric adsorption force is weakened by the application of the diluted chemical solution (that is, the particles are absorbed). Adhesion is reduced.) Then, air that has been subjected to ultrasonic vibration is ejected toward the upper surface of the substrate 9a that has been processed by the ultraviolet irradiation unit 62 and the chemical solution applying unit 631, thereby realizing the appropriate and efficient removal of particles. .

  Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various modifications can be made.

  When the chemical solution application unit is used in the substrate cleaning process in the substrate cleaning apparatus, the suction unit may be omitted from the dry nozzle unit. Even in this case, the particles separated by the ultrasonic wave application unit are removed from the substrate together with the liquid remaining on the substrate.

  Further, the pretreatment for reducing the adhesion force of the particles adhering to the main surface of the substrate before the air from the ultrasonic wave imparting portion is imparted may be a treatment other than light etching or ultraviolet irradiation.

  In the dry nozzle portion in the above-described embodiment, two ultrasonic wave application units are provided, but air may be applied to the substrate after pretreatment by only one ultrasonic wave application unit. Further, a specific gas other than air may be supplied to the ultrasonic wave application unit and may be ejected toward the substrate while applying ultrasonic vibration.

  In the substrate cleaning apparatus 1 according to the first embodiment, the liquid remaining on the upper surface of the substrate 9 after the ejection of air from the ultrasonic wave application unit 465 is removed by rotating the substrate 9 by the motor 422 of FIG. Similarly to the substrate cleaning apparatus 1a of FIG. 10, a heater may be provided to remove the liquid remaining on the upper surface of the substrate 9. Further, instead of the heater 65 in the substrate cleaning apparatus 1a, for example, an air knife portion that ejects air with an ejection amount that does not affect the pattern formed on the substrate 9a is provided and remains on the upper surface of the substrate 9a. The liquid may be removed.

  In addition to the semiconductor substrate and the glass substrate, the substrate to be cleaned in the substrate cleaning apparatus may be a printed wiring board, for example.

It is a top view which shows the structure of the board | substrate cleaning apparatus which concerns on 1st Embodiment. It is a top view which shows the structure of a washing | cleaning part. It is sectional drawing which shows the structure of a washing | cleaning part. It is sectional drawing which shows the lower part of a dry nozzle part. It is a figure which shows the flow of the process which a board | substrate cleaning apparatus cleans a board | substrate. It is a figure which shows the other example of the flow of the process which a board | substrate cleaning apparatus cleans a board | substrate. It is a figure which shows the further another example of the flow of the process which a board | substrate cleaning apparatus cleans a board | substrate. It is a figure which shows the further another example of the flow of the process which a board | substrate cleaning apparatus cleans a board | substrate. It is a figure which shows the further another example of the flow of the process which a board | substrate cleaning apparatus cleans a board | substrate. It is a top view which shows the structure of the board | substrate cleaning apparatus which concerns on 2nd Embodiment. It is a figure which shows the structure of the board | substrate cleaning apparatus which concerns on 2nd Embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1,1a Substrate cleaning apparatus 3,62 Ultraviolet irradiation part 9,9a Substrate 42 Holding part 44,631 Chemical liquid application part 45,633 Rinse liquid application part 61 Substrate moving mechanism 65 Heater 422 Motor 463 Suction part 465 Ultrasonic application part S10 S13, S11a Step

Claims (12)

A substrate cleaning apparatus for cleaning a substrate,
A holding unit for holding the substrate;
Pre-processing means for performing pre-processing to reduce the adhesion of particles adhering to the main surface of the substrate;
To the main surface after the pretreatment, an ultrasonic wave application unit that ejects a gas to which ultrasonic vibration is applied, and
A substrate cleaning apparatus comprising: The substrate cleaning apparatus according to claim 1,
The substrate cleaning apparatus, wherein the pretreatment means includes a chemical solution application unit that applies a diluted chemical solution to the main surface and performs light etching on the main surface. The substrate cleaning apparatus according to claim 2,
A substrate cleaning apparatus, further comprising: a rinsing liquid applying unit that applies a rinsing liquid to the main surface immediately after the light etching is performed, and replaces the chemical liquid remaining on the main surface with the rinsing liquid. . The substrate cleaning apparatus according to claim 2 or 3,
A substrate cleaning apparatus, further comprising means for removing liquid remaining on the main surface after the ejection of gas from the ultrasonic wave application unit. The substrate cleaning apparatus according to any one of claims 2 to 4,
The substrate cleaning apparatus, wherein the pretreatment unit further includes an ultraviolet irradiation unit that irradiates the main surface with ultraviolet rays before the diluted chemical solution is applied to the main surface by the chemical solution application unit. The substrate cleaning apparatus according to claim 1,
Provided in the vicinity of the ultrasonic wave application unit, further comprising a suction unit for sucking gas from the main surface,
The substrate cleaning apparatus, wherein the pretreatment means includes an ultraviolet irradiation unit that irradiates the main surface with ultraviolet rays. A substrate cleaning method for cleaning a substrate,
A pretreatment process for performing a pretreatment for reducing the adhesion of particles adhering to the main surface of the substrate;
To the main surface after the pretreatment, an ultrasonic wave application step of ejecting a gas to which ultrasonic vibration is applied, and
A substrate cleaning method comprising: The substrate cleaning method according to claim 7, comprising:
The substrate cleaning method, wherein the pretreatment step includes a chemical solution applying step of applying a diluted chemical solution to the main surface and performing light etching on the main surface. The substrate cleaning method according to claim 8, comprising:
A substrate cleaning method, further comprising a rinsing liquid application step of applying a rinsing liquid to the main surface immediately after the light etching and replacing the chemical remaining on the main surface with the rinsing liquid. . The substrate cleaning method according to claim 8 or 9, wherein
A substrate cleaning method, further comprising a step of removing liquid remaining on the main surface after the ultrasonic wave application step. A substrate cleaning method according to any one of claims 8 to 10,
The substrate cleaning method, wherein the pretreatment step further includes an ultraviolet irradiation step of irradiating the main surface with ultraviolet rays before the chemical solution applying step. The substrate cleaning method according to claim 7, comprising:
In parallel with the ultrasonic wave application step, further comprising a suction step of sucking gas from the main surface,
The substrate cleaning method, wherein the pretreatment step includes an ultraviolet irradiation step of irradiating the main surface with ultraviolet rays.

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