JP2006261150A - Vertical resonator type surface-emitting semiconductor laser device, light-emitting system and optical transmission system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To employ a structure capable of preventing complication of a manufacturing process of a vertical resonator type surface-emitting semiconductor laser device when a configuration in which an active layer of the vertical resonator type surface-emitting semiconductor laser device is excited by an external excitation light is employed. <P>SOLUTION: The vertical resonator type surface-emitting semiconductor laser device having a resonator structure sandwiched up and down with a multilayer reflection mirror on a substrate has an active region to be excited by an external excitation light in the resonator structure. The external excitation light has a wavelength which is shorter than a resonant mode wavelength of the resonator structure, and is in a high reflection rate band of the multilayer film reflection mirror. In this device, the incident angle of the external excitation light can be set so that the wavelength of the external excitation light may match the wavelength of an apparent resonant mode having been shortened, by utilizing the fact that the apparent resonant mode in the resonator structure shifts to a short wavelength when the incident angle of the external excitation light into the resonator structure is gradually shifted from a vertical incident direction to a side surface direction. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a vertical cavity surface emitting semiconductor laser device, a light emitting system, and an optical transmission system.

  In recent years, optical transmission technology has been developed not only in trunk transmission networks but also in LANs, access systems, and home networks. For example, in Ethernet, a transmission capacity of 10 Gbps has been developed. In the future, further increase in transmission capacity is required, and an optical transmission system exceeding 10 Gbps is expected.

  As a light source for LAN and optical interconnection, use of a vertical cavity surface emitting semiconductor laser device (VCSEL) has been studied. The VCSEL has lower power consumption than an edge-emitting semiconductor laser, has no characteristics of cleaving in the manufacturing process, and can inspect elements in a wafer state. Yes. Therefore, VCSEL is expected as a light source for large capacity optical LAN and optical interconnection exceeding 10 Gbps.

  However, in a VCSEL that oscillates by current injection, current is usually injected through a multilayer mirror. This multilayer mirror is obtained by alternately stacking semiconductor layers having different refractive indexes and has a large number of heterointerfaces, so that the resistance is inevitably high. As a result, the device resistance of the VCSEL is likely to be high, high-speed modulation is likely to be difficult due to the limitation to the modulation band due to the CR time constant, and heat generation due to current injection is likely to be a problem. In addition, when the doping concentration of the multilayer reflector is increased to lower the resistance of the multilayer film so as to reduce the resistance, this causes a problem that the oscillation of the VCSEL is hindered due to light absorption.

  In addition, when a VCSEL is used as a light source for optical communication or optical interconnection, high-speed modulation is desired. For high-speed modulation, it is preferable to reduce the element capacity of the VCSEL. For this purpose, the element diameter of the VCSEL must be reduced. Is effective. However, reducing the element diameter is disadvantageous for heat dissipation by current injection.

  As described above, the VCSEL is likely to be limited to high-speed modulation due to some problems, but several techniques have been proposed as a method for modulating the VCSEL at high speed.

  As one form of such a proposal, a method using injection light from the outside (external excitation light) has been proposed.

  For example, in Patent Document 1, a lateral resonator type semiconductor laser for performing light injection excitation on a VCSEL is formed on the same substrate, and the forbidden band width of the active layer of the VCSEL is defined as a lateral resonator type semiconductor laser. Is set to be smaller than the forbidden band width, and the forbidden band width of the lateral resonator type semiconductor laser is smaller than the forbidden band width of the barrier layer of the VCSEL. A technique for increasing the modulation frequency of a VCSEL by inputting a modulated optical signal from a type semiconductor laser is shown. However, the method disclosed in Patent Document 1 has a problem in that since the resonator structure must be formed in the lateral direction, the device manufacturing process becomes complicated and the cost increases.

  Non-Patent Document 1 reports a structure in which 0.85 μm band VCSEL for excitation and 1.3 μm band VCSEL are integrated. In Non-Patent Document 1, a 1.3 μm band VCSEL does not have a current injection structure, and is excited by a 0.85 μm band VCSEL to obtain oscillation of a 1.3 μm band VCSEL. In this case, the active layer must be excited through the multilayer reflector of the 1.3 μm band VCSEL, and therefore, excitation is performed with the VCSEL in the 0.85 μm band that is greatly deviated from the high reflection band of the multilayer reflector. . Therefore, the modulation characteristics of the entire element are limited by various characteristics including the capacitance and resistance of the excitation VCSEL. In addition, the excitation efficiency is good when excitation light having an energy higher than the forbidden band width of the active layer of the 1.3 μm band VCSEL and lower than the forbidden band width of the barrier layer is used, but in particular, a multilayer film of the 1.3 μm band VCSEL Light with a wavelength corresponding to the high reflection band of the reflecting mirror cannot be transmitted through the multilayer reflecting mirror and cannot be used as excitation light.

Non-Patent Document 2 discloses that light that is synchronized with the VCSEL oscillation mode is injected from the outside to increase the light density in the VCSEL, thereby increasing the relaxation oscillation frequency of the VCSEL and enabling high-speed modulation. It has been reported. However, in this method, it is necessary to inject laser light that exactly matches the resonance mode of the VCSEL from the outside, and mode locking becomes impossible with a wavelength shift of several nm, and deviation from the resonance mode of the VCSEL. The reflection of the multilayer mirror makes it impossible to inject light into the VCSEL. Therefore, it is necessary to strictly match the laser wavelength for injection and the resonance mode wavelength of the VCSEL, which limits the yield of both lasers and increases the cost.
JP-A-7-249824 Electricon. Lett. , 1998, 34, pp 1405-1407. LQE2003-155

  The present invention provides a method for manufacturing a vertical cavity surface emitting semiconductor laser device (VCSEL) when the active layer (active region) of the vertical cavity surface emitting semiconductor laser device (VCSEL) is excited by external excitation light. The structure can be made without complicating the process, and the excitation efficiency is increased with excitation light having energy higher than the forbidden band width of the active layer of the VCSEL and lower energy than the forbidden band width of the barrier layer. Even if it is light within the high reflectance band of the VCSEL multilayer reflector, it can be excited through the multilayer reflector even if the VCSEL resonance mode wavelength and the wavelength of the external excitation light do not exactly match, An object of the present invention is to provide a vertical cavity surface emitting semiconductor laser device, a light emitting system, and an optical transmission system suitable for high-speed modulation.

  In order to achieve the above object, the invention according to claim 1 is directed to a vertical cavity surface emitting semiconductor laser device having a resonator structure sandwiched between upper and lower layers by a multilayer reflector on a substrate. The resonator structure has an active region that is excited by external excitation light, and the external excitation light is shorter than a resonance mode wavelength of the resonator structure and has a high reflectance band of the multilayer reflector. When the incident angle of the external excitation light to the resonator structure is gradually shifted from the normal incidence direction to the side surface direction, the apparent resonance mode in the resonator structure shifts to the short wavelength side. The incident angle of the external excitation light can be set so that the wavelength of the external excitation light matches the wavelength of the apparent resonance mode that has been shortened. .

  According to a second aspect of the present invention, there is provided a vertical cavity surface emitting semiconductor laser device having a resonator structure sandwiched between upper and lower layers by a multilayer reflector on a substrate. A first active region that emits light by current injection and a second active region that emits light by external excitation light, and a first active region that emits light by current injection and a second active region that emits light by external excitation light Has a gain with respect to the same resonance mode wavelength, and the external excitation light is shorter than the resonance mode wavelength of the resonator structure and has a wavelength in the high reflectivity band of the multilayer reflector. And the fact that the apparent resonance mode in the resonator structure shifts to the short wavelength side when the incident angle of the external excitation light to the resonator structure is gradually shifted from the normal incident direction to the side surface direction. The wavelength of the external excitation light is shortened And to match the wavelength of the resonant modes of the apparent is characterized that it is possible to set the incident angle of the external excitation light.

  According to a third aspect of the present invention, there is provided a plurality of resonator structures sandwiched between upper and lower layers by a multilayer reflector on a substrate, and the plurality of resonator structures are optically coupled to form one resonance mode. The vertical cavity surface emitting semiconductor laser device to be formed has a first active region that emits light by current injection in one resonator structure, and a second cavity that emits light by external excitation light in another resonator structure. The first active region that has an active region and emits light by current injection and the second active region that emits light by external excitation light have a gain with respect to the same resonance mode wavelength, and the external excitation light is the resonance It has a wavelength shorter than the resonance mode wavelength of the resonator structure and has a high reflectivity band of the multilayer reflector, and the incident angle of the external excitation light to the resonator structure is gradually increased from the vertical incident direction to the side surface direction. Apparent resonances in the resonator structure when shifting to The incident angle of the external excitation light is set so that the wavelength of the external excitation light coincides with the wavelength of the apparent resonance mode that has been shortened by utilizing the fact that the mode shifts to the short wavelength side. It is characterized by being possible.

  According to a fourth aspect of the present invention, in the vertical cavity surface emitting semiconductor laser device according to any one of the first to third aspects, a plurality of external pumping lights are used as the external pumping light. It is characterized by that.

  According to a fifth aspect of the present invention, in the vertical cavity surface emitting semiconductor laser device according to any one of the first to fourth aspects, the active region contains nitrogen and other group V elements. It is characterized by using a mixed crystal semiconductor.

  According to a sixth aspect of the present invention, there is provided a vertical cavity surface emitting semiconductor laser device according to any one of the first to fifth aspects of the present invention and an external device that is incident on the vertical cavity surface emitting semiconductor laser device. The light emitting system includes an external excitation light source that generates excitation light.

  According to a seventh aspect of the present invention, in the light emitting system according to the sixth aspect, the external excitation light source is a semiconductor laser.

  According to an eighth aspect of the present invention, in the light emitting system according to the sixth or seventh aspect, the external excitation light source is a vertical cavity surface emitting semiconductor laser element.

  According to a ninth aspect of the present invention, there is provided an optical transmission system using the vertical cavity surface emitting semiconductor laser device according to any one of the first to fifth aspects.

  According to the first aspect of the present invention, there is provided a vertical cavity surface emitting semiconductor laser device having a resonator structure sandwiched between upper and lower layers by a multilayer reflector on a substrate. The external excitation light is shorter than the resonance mode wavelength of the resonator structure and has a wavelength in the high reflectivity band of the multilayer mirror; When the incident angle of the external excitation light to the resonator structure is gradually shifted from the vertical incident direction (the direction parallel to the emission optical axis of the resonator structure) to the side surface, the apparent resonance mode in the resonator structure is The incident angle of the external excitation light is set (adjusted) so that the wavelength of the external excitation light matches the wavelength of the apparent resonance mode that has been shortened by utilizing the fact that the wavelength is shifted to the short wavelength side. Enabled, the wavelength of the external excitation light When the incident angle of the external excitation light is set (adjusted) so as to match the wavelength of the apparent resonance mode with a shorter wavelength, excitation can be performed with high efficiency and the external excitation light Can be incident from the front or back surface of the vertical cavity surface emitting semiconductor laser device (VCSEL), compared to a configuration in which external excitation light is incident from the side surface direction of the active layer, Since the element structure and process are simple, it is advantageous in terms of cost. Also, high-speed modulation is possible by modulating the external excitation light.

  According to a second aspect of the present invention, there is provided a vertical cavity surface emitting semiconductor laser device having a resonator structure sandwiched between upper and lower layers by a multilayer reflector on a substrate. The first active region that emits light by current injection and the second active region that emits light by external excitation light, and the second active region that emits light by current injection and the second active region that emits light by external excitation light. The active region has a gain with respect to the same resonance mode wavelength, the external excitation light is shorter than the resonance mode wavelength of the resonator structure, and has a wavelength in the high reflectance band of the multilayer reflector. And apparently in the resonator structure when the incident angle of the external excitation light to the resonator structure is gradually shifted from the vertical incident direction (direction parallel to the light emission optical axis of the resonator structure) to the side surface direction That the resonance mode of the Therefore, the incident angle of the external excitation light can be set so that the wavelength of the external excitation light matches the wavelength of the apparent resonance mode that has been shortened, and the wavelength of the external excitation light is When the incident angle of the external excitation light is set (adjusted) so as to match the wavelength of the apparent resonance mode with a shorter wavelength, it is possible to perform excitation with high efficiency and Since it is configured to be able to be incident from the front surface or the back surface of the vertical cavity surface emitting semiconductor laser device (VCSEL), the element is compared with a configuration in which external excitation light is incident from the side surface direction of the active layer. Since the structure and process are simple, it is advantageous in terms of cost. Also, high-speed modulation is possible by modulating the external excitation light.

  According to a third aspect of the present invention, the substrate has a plurality of resonator structures sandwiched by a multilayer reflector on the substrate, and the plurality of resonator structures are optically coupled to form one resonance. A vertical cavity surface emitting semiconductor laser device that forms a mode has a first active region that emits light by current injection in one resonator structure, and a first cavity that emits light by external excitation light in another resonator structure. The first active region that emits light by current injection and the second active region that emits light by external excitation light have a gain with respect to the same resonance mode wavelength, and the external excitation light is The resonance structure wavelength is shorter than the resonance mode wavelength of the resonator structure, and has a wavelength in the high reflectivity band of the multilayer mirror, and the incident angle of the external excitation light to the resonator structure is set in the vertical incident direction (resonator Gradually shift from the direction parallel to the light-emitting optical axis of the structure to the side. When the apparent resonance mode in the resonator structure shifts to the short wavelength side, the wavelength of the external pumping light matches the wavelength of the apparent resonance mode with a shorter wavelength. The incident angle of the external excitation light can be set (adjusted), and the incident angle of the external excitation light can be adjusted so that the wavelength of the external excitation light matches the apparent resonance mode wavelength. When set (adjusted), pumping can be performed with high efficiency, and external pumping light can be incident from the front or back surface of a vertical cavity surface emitting semiconductor laser device (VCSEL) Therefore, as compared with a configuration in which external excitation light is incident from the side surface direction of the active layer, the element structure and process are simple, which is advantageous in terms of cost. Also, high-speed modulation is possible by modulating the external excitation light.

  According to a fourth aspect of the present invention, in the vertical cavity surface emitting semiconductor laser device according to any one of the first to third aspects, a plurality of external excitation lights are used as the external excitation light. Therefore, it is possible to use a laser with a lower output as each external pumping light source, and there are less restrictions on the pumping light source, which is advantageous for cost reduction.

  According to a fifth aspect of the present invention, in the vertical cavity surface emitting semiconductor laser device according to any one of the first to fourth aspects, nitrogen and other group V elements are present in the active region. Therefore, a device capable of emitting light in the 1.3 μm band suitable for optical communication can be provided.

  According to a sixth aspect of the invention, the vertical cavity surface emitting semiconductor laser device according to any one of the first to fifth aspects and the vertical cavity surface emitting semiconductor laser device are incident. 6. A vertical cavity surface emitting semiconductor laser device according to claim 1, further comprising: an external excitation light source that generates external excitation light to be emitted. Is used, high-speed modulation is possible, and a cost-effective light-emitting system can be provided.

  According to a seventh aspect of the present invention, in the light emitting system according to the sixth aspect, the external excitation light source is a semiconductor laser, so that it is possible to reduce the size at a low cost, which is further advantageous in terms of cost.

  According to the invention described in claim 8, in the light emitting system according to claim 6 or 7, since the external excitation light source is a vertical cavity surface emitting semiconductor laser element, the light emission is smaller and less expensive. Can provide a system.

According to the description of claim 9, since the vertical cavity surface emitting semiconductor laser device according to any one of claims 1 to 5 is used, an inexpensive and compact optical transmission system is used. Can provide.

  Hereinafter, the best mode for carrying out the present invention will be described.

(First form)
According to a first aspect of the present invention, there is provided a vertical cavity surface emitting semiconductor laser device (VCSEL) having a resonator structure sandwiched between upper and lower layers by a multilayer reflector on a substrate. The external excitation light is shorter than the resonance mode wavelength of the resonator structure, and has a wavelength in the high reflectivity band of the multilayer reflector. The apparent resonance in the resonator structure when the incident angle of the external excitation light to the resonator structure is gradually shifted from the vertical incident direction (the direction parallel to the light emission optical axis of the resonator structure) to the side surface direction. Using the fact that the mode shifts to the short wavelength side, the incident angle of the external excitation light is set so that the wavelength of the external excitation light matches the wavelength of the apparent resonance mode that has been shortened ( Adjustable) It is.

  The external excitation light is shorter than the resonance mode wavelength of the resonator structure of the vertical cavity surface emitting semiconductor laser device (VCSEL) and has a wavelength in the high reflectance band of the multilayer reflector. That is, as the external excitation light, light having a wavelength slightly shorter than the resonance mode wavelength of the VCSEL is used. However, the active region cannot be excited because it is reflected by the reflecting mirror at normal normal incidence. On the other hand, when the incident angle is gradually shifted from the vertical incident direction to the side surface direction, the apparent resonance mode is shifted to the short wavelength side. For this reason, when the apparent resonance mode with a shorter wavelength matches the wavelength of the external pumping light, the pumping light can be injected into the VCSEL. In other words, if the relationship between the resonance wavelength of the VCSEL and the wavelength of the external excitation light is within an appropriate range, the incident angle of the external excitation light is adjusted to inject the excitation light in accordance with the apparent resonance mode. Therefore, it is not necessary to exactly match the resonance wavelength of the VCSEL and the wavelength of the external pumping light, which helps to reduce the cost. In addition, when light having a wavelength shorter than the resonance wavelength of the VCSEL is used as the external excitation light, the excitation efficiency is better than when the wavelength is the same as the resonance wavelength of the VCSEL.

  Specifically, for example, in the case of a VCSEL resonator structure that oscillates at 1300 nm, the resonance mode is 1300 nm at normal incidence (90 ° incidence), but it appears to 1296 nm when tilted to 75 degrees incidence. The upper resonance mode is shortened. Further tilting to 45 degrees shortens the apparent resonance mode up to 1270 nm, so that up to 45 degrees incidence allows use of excitation light about 30 nm shorter (see FIG. 7).

  In the case of using external excitation light, in order to enter the active layer from the side surface direction, the device configuration is inevitably complicated and the cost tends to increase. On the other hand, in the first embodiment, since external excitation light can be incident from the front surface or the back surface of the device, there are relatively few process restrictions such that the opening portion for the device incidence is the front surface or the back surface of the device. Since it can be provided in the portion and the difficulty of the process is not increased, there is an advantage that the cost can be reduced. Further, since the pumping light source wavelength that can be used is close to the oscillation wavelength of the VCSEL and short, the light pumping efficiency can be improved. In such a configuration, the VCSEL can be modulated by external excitation light.

  When directly modulating a semiconductor laser, a cause of limiting the modulation band is an electrical frequency response characteristic determined from a CR time constant. Since the CR time constant τ = CR is a value representing the amount of delay in the change of the current value with respect to the input voltage, reducing this time constant is important for widening the modulation band.

  In general, in a VCSEL, the capacitance C caused by the oxidized constriction structure or the R caused by the resistance at the heterointerface in the DBR tends to be large, and the electrical frequency response is inevitably higher than that of the edge-emitting semiconductor laser. Prone to disadvantage.

  In the present invention, a DFB (distributed feedback type) laser that is more easily electrically directly modulated is used as an external pumping light source, and the VCSEL active layer is directly modulated by modulating the optical output of the external pumping light source such as the DFB laser. Since the light emission intensity from the light source is modulated, it is easier to perform high-speed modulation.

(Second form)
According to a second aspect of the present invention, there is provided a vertical cavity surface emitting semiconductor laser device (VCSEL) having a resonator structure sandwiched between upper and lower layers by a multilayer reflector on a substrate. The first active region that emits light by current injection and the second active region that emits light by external excitation light, and the second active region that emits light by current injection and the second active region that emits light by external excitation light. The active region has a gain with respect to the same resonance mode wavelength, the external excitation light is shorter than the resonance mode wavelength of the resonator structure, and has a wavelength in the high reflectance band of the multilayer reflector. And apparently in the resonator structure when the incident angle of the external excitation light to the resonator structure is gradually shifted from the vertical incident direction (direction parallel to the light emission optical axis of the resonator structure) to the side surface direction The resonance mode of the laser shifts to the short wavelength side The incident angle of the external excitation light can be set (adjusted) so that the wavelength of the external excitation light coincides with the wavelength of the apparent resonance mode that has been shortened. .

  That is, the vertical cavity surface emitting semiconductor laser (VCSEL) according to the second embodiment has an external excitation without a current injection mechanism in addition to the first active region that emits light by current injection provided in the resonator. A second active region that emits light is provided. By modulating the current injected into the first active region, the carrier density in the first active region changes and the light output intensity is modulated. On the other hand, in the second active region, stimulated emission occurs by continuously injecting excitation light from the outside, and laser oscillation occurs when the excitation light intensity is increased beyond the threshold light output.

  Also in the second embodiment, as in the first embodiment, if the relationship between the resonance wavelength of the VCSEL and the wavelength of the external pumping light is within an appropriate range, the incident angle of the external pumping light can be adjusted. Since the pumping light can be injected in accordance with the apparent resonance mode, it is not necessary to strictly match the resonance wavelength of the VCSEL and the wavelength of the external pumping light, which helps to reduce the cost. In addition, when light having a wavelength shorter than the resonance wavelength of the VCSEL is used as the external excitation light, the excitation efficiency is better than when the wavelength is the same as the resonance wavelength of the VCSEL. In addition, since external excitation light can be made incident from the front or back surface of the element, an opening for entering the element can be provided in a relatively less restrictive process, such as the front or back surface of the element, and the process. There is an advantage that the cost can be reduced.

  In the second embodiment, the first active region that emits light by current injection and the second active region that emits light by external excitation light are provided in the same resonator structure, and the resonator has Both have gain for the same resonant mode wavelength. Therefore, the oscillation light by current injection and the oscillation light by the external excitation light oscillate at the same wavelength and are mode-locked. As a result, the photon density generated by the external excitation light is added in the same mode to the photon density generated by conventional current injection, so that the photon density inside the device can be increased as compared with the conventional case.

  When a semiconductor laser is directly modulated, causes for limiting the modulation band include CR time constant, carrier transport effect, relaxation oscillation frequency, and the like. In particular, the relaxation oscillation frequency is a limit frequency at which the stimulated emission speed cannot follow the carrier density change in the light emitting layer, and is an essential limitation in the case of direct modulation. The relaxation oscillation frequency fr is generally expressed by the following equation (Equation 1).

Here, Γ is an optical confinement factor, η is a differential gain, S is a photon density, and τ _p is a photon lifetime.

  In the second embodiment, the photon density can be increased. As can be seen from Equation 1, the relaxation oscillation frequency of the VCSEL can be increased and high-speed modulation can be performed.

(Third form)
The third embodiment of the present invention has a plurality of resonator structures sandwiched by a multilayer reflector on a substrate, and the plurality of resonator structures are optically coupled to form one resonance mode. The vertical cavity surface emitting semiconductor laser device (VCSEL) has a first active region that emits light by current injection in one resonator structure, and emits light by external excitation light in another resonator structure. The first active region that emits light by current injection and the second active region that emits light by external excitation light have a gain with respect to the same resonance mode wavelength, and the external excitation light is The resonance structure wavelength is shorter than the resonance mode wavelength of the resonator structure, and has a wavelength in the high reflectivity band of the multilayer mirror, and the incident angle of the external excitation light to the resonator structure is set in the vertical incident direction (resonator Gradually shift from the direction parallel to the light-emitting optical axis of the structure to the side By utilizing the fact that the apparent resonance mode in the resonator structure shifts to the shorter wavelength side, the wavelength of the external excitation light matches the wavelength of the apparent resonance mode that has been shortened. The incident angle of the external excitation light can be set (adjusted).

  In the vertical cavity surface emitting semiconductor laser device (VCSEL) of the third embodiment, the carrier density in the first active region is changed by modulating the current injected into the first active region, so that the optical output The intensity is modulated. On the other hand, in the second active region, stimulated emission occurs by continuously injecting excitation light from the outside, and laser oscillation occurs when the excitation light intensity is increased beyond the threshold light output. Also in this third embodiment, the incident light is inclined from the front surface or the back surface of the VCSEL from the vertical, and the pumping light is injected so as to coincide with the resonance mode that is apparently a short wave. The oscillation wavelength can be close and short. Therefore, the light excitation efficiency can be improved. Further, the structure of the VCSEL is not complicated as compared with the case where the excitation light is incident from the side surface direction, so that the cost can be reduced.

  In the third embodiment, the first active region that emits light by current injection and the second active region that emits light by external excitation light are provided in different resonator structures. Are optically coupled to form one resonance mode. Further, for the same resonance mode wavelength, the first active region that emits light by current injection and the second active region that emits light by external excitation light both have gain. Therefore, the oscillation light by current injection and the oscillation light by the external excitation light oscillate at the same wavelength and are mode-locked. Thereby, the photon density generated by the external excitation light is added in the same mode to the photon density generated by the conventional current injection, so that the photon density inside the VCSEL can be increased as compared with the conventional case. Accordingly, the relaxation oscillation frequency of the VCSEL is increased, and high-speed modulation is possible.

(4th form)
According to a fourth aspect of the present invention, in the vertical cavity surface emitting semiconductor laser device (VCSEL) according to any one of the first to third aspects, a plurality of external excitation lights are used as the external excitation light. It is a feature.

  In the present invention, from the front surface or the back surface of the VCSEL, the incident angle is inclined from the vertical direction to the side surface direction so as to coincide with the resonance mode that appears to be a short wave, and the excitation light is injected, so that it is oblique to the VCSEL. An external excitation light source can be arranged in Although it is difficult to use a plurality of external excitation light sources for vertical incidence on the VCSEL, in the configuration of the present invention in which external excitation light can be incident on the VCSEL obliquely, a plurality of external excitation light sources are used for the VCSEL. Can do. As a result, it is possible to use a laser having a relatively weak output for each external excitation light source, whereby the light source can be selected at a lower cost. In addition, the plurality of external excitation light sources do not have to have exactly the same wavelength, and even if each wavelength is slightly shifted, it can be used as an excitation light source by controlling the incident angle, so the cost can be minimized. .

(5th form)
According to a fifth aspect of the present invention, in the vertical cavity surface emitting semiconductor laser device (VCSEL) according to any one of the first to fourth aspects, a mixed crystal containing nitrogen and other group V elements in the active region. It is characterized by using a semiconductor.

  Here, examples of mixed crystal semiconductors of nitrogen and other group V elements include GaNAs, GaInNAs, GaNAsP, GaInNAsP, GaNAsSb, GaInNAsSb, GaNASPSb, and GaInNAsPSb. The mixed crystal semiconductor is a long wavelength band material system capable of crystal growth on a GaAs substrate, and will be described below using GaInNAs as an example.

  GaInNAs can increase the confinement barrier height of conduction band electrons with a barrier layer such as GaAs as high as 300 meV or more, so that the overflow of electrons is suppressed and it has good temperature characteristics. Further, a distributed Bragg reflector having high reflectivity and high thermal conductivity using an AlGaAs material system can be used, and a vertical cavity surface emitting semiconductor laser device having good performance in a long wavelength band can be formed.

  An object of the present invention is to provide a vertical-cavity surface-emitting semiconductor laser device (VCSEL) that enables high-capacity transmission exceeding 10 Gbps by improving the modulation frequency. In a high transmission band of 10 Gbps or more, the transmission distance is limited by the dispersion of the quartz optical fiber. By using a mixed crystal semiconductor of nitrogen and other group V elements such as GaInNAs in the active region, a VCSEL having a wavelength of 1.31 μm in which the dispersion of the quartz optical fiber is zero can be formed. You can save it.

  In the fifth embodiment, in the vertical cavity surface emitting semiconductor laser device (VCSEL) according to any one of the first to fourth embodiments, a mixed crystal semiconductor containing nitrogen and other group V elements is used in the active region. Therefore, a device capable of emitting light in a 1.3 μm band suitable for optical communication can be provided.

(Sixth form)
According to a sixth aspect of the present invention, the vertical cavity surface emitting semiconductor laser device (VCSEL) according to any one of the first to fifth embodiments and the vertical cavity surface emitting semiconductor laser device (VCSEL) are incident. The light emitting system includes an external excitation light source that generates external excitation light.

  Since the vertical cavity surface emitting semiconductor laser device (VCSEL) according to any one of the first to fifth aspects is used in the light emission system according to the sixth aspect, high-speed modulation is possible and cost is high. An advantageous light emitting system can be provided.

(7th form)
According to a seventh aspect of the present invention, in the light emitting system according to the sixth aspect, the external excitation light source is a semiconductor laser.

  In the seventh embodiment, by using a semiconductor laser as the external excitation light source, the size of the light emitting system can be reduced, and the power consumption of the light emitting system can be reduced. As the semiconductor laser used as the external excitation light source, a distributed feedback (DFB) semiconductor laser, a distributed Bragg reflection (DBR) semiconductor laser, or the like can be used.

(Eighth form)
According to an eighth aspect of the present invention, in the light emitting system according to the sixth or seventh aspect, the external excitation light source is a vertical cavity surface emitting semiconductor laser element.

  A vertical cavity surface emitting semiconductor laser (VCSEL) consumes less power and can be manufactured at a lower cost than an edge emitting semiconductor laser. Therefore, by using a VCSEL as an external excitation light source, it is possible to further reduce power consumption and reduce the cost of the light emitting system.

(9th form)
According to a ninth aspect of the present invention, there is provided an optical transmission system using the vertical cavity surface emitting semiconductor laser device (VCSEL) according to any one of the first to fifth aspects.

  The optical transmission system of the ninth embodiment has a configuration suitable for high-speed modulation using the vertical cavity surface emitting semiconductor laser device (VCSEL) of the present invention. Therefore, an external modulator and an electronic cooling element are provided. A low-cost configuration that is not used, and a large-capacity, low-cost optical transmission system can be provided.

  Next, examples of the present invention will be described.

  FIGS. 1A and 1B are views showing a surface emitting semiconductor laser device (VCSEL) according to a first embodiment of the present invention. 1A is a cross-sectional view, and FIG. 1B is a top view (plan view).

Referring to FIG. 1A, an n-type semiconductor multilayer mirror (n-type DBR), a GaAs lower spacer layer, Ga _0.7 In _0.3 N _0.01 As _{0. 99} / GaAs DQW quantum well active layer, GaAs upper spacer layer, Al _0.9 Ga _0.1 As layer / Al _0.98 Ga _0.02 As oxide layer / Al _0.9 Ga _0.1 As layer, p-type Semiconductor multilayer film reflectors (p-type DBRs) are sequentially formed. Here, the Al _0.9 Ga _0.1 As layer, the Al _0.98 Ga _0.02 As oxide layer, and the Al _0.9 Ga _0.1 As layer have a total optical length of 3 / 4λ. It is designed as a low refractive index layer. The thickness of the low refractive index layer may be an odd multiple of 1 / 4λ, and does not necessarily have to be 3 / 4λ. The Al _0.98 Ga _0.02 As layer is, for example, 30 nm thick. On top of the low refractive index layer including the Al _0.98 Ga _0.02 As layer, a stacked structure starting from a 1 / 4λ GaAs high refractive index layer is grown to form a p-type DBR that acts as an upper reflecting mirror as a whole. Is done. The process of manufacturing this surface emitting semiconductor laser device (VCSEL) is as follows.

First, GaAs and Al _0.9 Ga _0.1 As are respectively formed on an n-type GaAs substrate by metal organic chemical vapor deposition (MOCVD) so that the optical length becomes 1 / 4λ with respect to the oscillation wavelength of the laser. An optical structure in which a quantum well active layer (layer thickness: 8 nm × 2) composed of a GaInNAs layer is sandwiched between GaAs spacer layers on a lower DBR (n-type DBR) by alternately laminating with a thickness (for example, 35 periods). A low-refractive-index layer formed of three layers of an Al _0.9 Ga _0.1 As layer, an AlAs oxide layer, and an Al _0.9 Ga _0.1 As layer on which a resonator structure having a long λ is grown. The upper DBR (p-type DBR) starting from is grown (for example, 25 periods).

  Next, the laminated structure is etched to the bottom of the active layer by reactive ion etching, and processed into a post-shaped mesa having a diameter of about 50 μm, for example. Then, the AlAs layer is selectively oxidized from the side surface whose surface is exposed by etching, and an insulating region is formed by the oxide, thereby forming a current confinement structure. The current is concentrated in the oxide opening region of about 5 μmφ, for example, by the insulating region and injected into the active layer.

  In addition, a p-side electrode is formed on the surface of the p-type DBR. As shown in FIG. 1B, a part of the surface of the p-type DBR is used as an entrance for entering external excitation light. The part where the electrode is not attached is provided. An n-side electrode is formed on the back surface of the n-type GaAs substrate.

  Thus, the configuration of the VCSEL itself is almost the same as that of a normal VCSEL, and only the incident part of the external excitation light needs to be considered. Moreover, since this incident part is provided on the front surface or the back surface of the substrate, it is troublesome in process. Can be provided without difficulty.

  In the VCSEL of Example 1, the light emitted from the DQW quantum well active layer is reflected and amplified by the upper and lower semiconductor multilayer reflectors and emitted as laser light in the direction perpendicular to the substrate. In the first embodiment, the resonator structure is designed so that oscillation can be obtained at 1300 nm, for example.

  In the first embodiment, the external excitation light is incident from the front surface of the VCSEL, but may be configured to be incident from the rear surface of the VCSEL. As an external excitation light source that generates external excitation light, a DFB laser that emits light with a wavelength of 1270 to 1275 nm can be used. Here, if the emission wavelength of the DFB laser is stable, it is not necessary to set the wavelength strictly. For example, if the oscillation wavelength is 1270 to 1275 nm as in this embodiment, the incident angle is set to 40 to 45. By adjusting in the range of degrees, it becomes possible to inject excitation light into the inside through the entrance (incident part) on the p-type DBR. For this reason, the wavelength of the DFB laser is not strictly set at a specific wavelength, and if temperature control for driving at a constant wavelength is performed, injection can be performed only by controlling the incident angle.

  In addition, the VCSEL of the first embodiment is also provided with a current injection structure so that current injection can be performed in the active layer. Therefore, in Example 1, a current slightly lower than the threshold current value is continuously injected into the active layer of the VCSEL, and at this time, the active layer is kept in a state where carriers are injected until just before oscillation. become. Oscillation occurs when light from the DFB laser is injected there as external excitation light. At this time, the wavelength of the DFB laser is about 1270 nm, which is 30 nm shorter than the oscillation wavelength of the VCSEL. In this way, since light having a wavelength close to the oscillation wavelength of the VCSEL and a shorter wavelength can be injected, excitation efficiency is improved.

  Thus, by using external excitation light together, it becomes possible to oscillate the injected current in a low state. Further, by modulating the light using the modulation of the DFB laser, it becomes possible to perform modulation at a higher speed than in the case where oscillation is obtained by current injection of a single VCSEL. Specifically, for example, by inputting a light pulse with a DFB laser at 10 GHz, the active layer of the VCSEL is excited corresponding to the light pulse, and modulation at 10 GHz becomes possible. A DFB laser generally has a modulation characteristic of about 10 GHz, and an element that can be modulated relatively easily can be obtained within this band.

  In the laser structure as described above, since it becomes possible to use laser light having a wavelength close to the oscillation wavelength of the VCSEL and slightly shorter wavelength as excitation light, excitation efficiency is increased. If the wavelength of the external excitation light source is constant, by controlling the incident angle of the external excitation light according to the wavelength of the external excitation light source, it can be used in a certain wavelength range, and the flexibility of the light source increases. , Lower costs. Further, unlike excitation light injection (incident) from the lateral direction (side direction), it is not necessary to form a special structure in order to make the excitation light incident on the active layer, and the cost does not increase.

  FIG. 2 is a diagram showing a surface emitting semiconductor laser device (VCSEL) according to a second embodiment of the present invention.

  In FIG. 2, a DBR 1 having a non-doped AlGaAs / GaAs laminated structure is formed on a semi-insulating substrate (GaAs substrate). Here, each semiconductor layer constituting the DBR 1 has a ¼ wavelength thickness. On the non-doped DBR1, a first spacer layer (spacer layer 1) made of GaAs, a first active layer (active layer 1) made of GaInNAs / GaAs multiple quantum wells, and a second spacer layer (spacer layer 2) made of n-type GaAs ), A second active layer (active layer 2) made of GaInNAs / GaAs multiple quantum wells, a third spacer layer (spacer layer 3) made of GaAs, a p-type AlAs selective oxide layer, and a p-type DBR2 are sequentially laminated. . The p-type DBR 2 has a p-type AlGaAs / GaAs layered structure, and each has a quarter wavelength thickness.

  In FIG. 2, a mesa structure is formed by etching in a cylindrical shape from the surface of the laminated structure to the middle of the n-type second spacer layer (spacer layer 2). In addition, the AlAs selective oxide layer is oxidized from the mesa side surface to form a current confinement structure. In addition, a p-side electrode is formed in a ring shape on the surface of the p-type DBR 2 except for the light emission portion. Further, an n-side electrode is formed on the second spacer layer (spacer layer 2) on the bottom surface of the mesa.

  In Example 2, the current is injected from the p-electrode and the n-electrode to excite the second active layer (active layer 2), and 1.3 μm band light is generated. At this time, the current is confined by the current confinement structure and injected into the active layer 2.

  The light emitted from the active layer 2 resonates in a resonator sandwiched between two DBRs (DBR1, DBR2), and a laser beam is extracted in the vertical direction. In Example 2, the laser oscillation wavelength is 1300 nm.

  In the VCSEL of Example 2, a first active layer (active layer 1) that emits light upon incidence of external excitation light is provided separately from the second active layer (active layer 2) that emits light by current injection. The active layer 1 does not have a current injection structure, and the active layer 1 oscillates upon the incidence of external excitation light. As an external excitation light source that generates external excitation light, a DFB laser emitting at a wavelength of 1270 to 1275 nm can be used. Here, if the emission wavelength of the DFB laser is stable, it is not necessary to set the wavelength strictly. For example, if the oscillation wavelength is 1270 to 1275 nm as in this embodiment, the incident angle is 40 to 45 degrees. By adjusting within the range, it becomes possible to inject external excitation light into the inside from the back surface of the VCSEL (back surface of the substrate). For this reason, the wavelength of the DFB laser is not strictly set at a specific wavelength, and if temperature control for driving at a constant wavelength is performed, injection can be performed only by controlling the incident angle.

  If the intensity of the incident external excitation light is set to a threshold value or more, the first active layer (active layer 1) emits light in the 1.3 μm band, and oscillation occurs in the resonator structure. Since both the first active layer (active layer 1) and the second active layer (active layer 2) have the same band gap and are configured to oscillate with the same resonance structure, the second oscillated by current injection. The active layer (active layer 2) and the first active layer (active layer 1) oscillated by light incidence oscillate at the same wavelength. When the first active layer (active layer 1) is continuously photo-excited and the second active layer (active layer 2) is continuously oscillated by injecting current exceeding the threshold current value, the VCSEL is in a single mode. Continuous oscillation. Here, when the current value of the injection current of the second active layer (active layer 2) is modulated, the intensity of the laser light emitted from the VCSEL corresponding to the modulation of the carrier density of the second active layer (active layer 2). Is modulated. At this time, since light generated from the first active layer (active layer 1) is added in the same mode to light emission from the second active layer (active layer 2) by current injection, the photon density in the VCSEL structure increases.

  Thus, by increasing the photon density while suppressing the carrier density due to current injection in the second active layer (active layer 2), gain saturation due to carrier overflow of the second active layer (current layer 2) into which current is injected is prevented. As a result, the relaxation oscillation frequency increases and high-speed modulation becomes possible. In particular, the second embodiment has an oscillation wavelength in the 1.3 μm band that can reduce the influence of dispersion of the quartz optical fiber, and can be used as a light source capable of high-speed transmission at 10 Gbps or higher. .

  In a VCSEL suitable for high-speed modulation as described above, since it is possible to use laser light having a wavelength close to the oscillation wavelength of the VCSEL and slightly shorter wavelength as excitation light, excitation efficiency is increased. If the wavelength of the external excitation light source is constant, the incident angle can be controlled according to the wavelength of the external excitation light source, so that the light in a certain wavelength range can be used. Can be lowered. Also, unlike excitation light injection from the lateral direction (side surface direction), there is no need to form a special structure for making excitation light incident on the active layer (it is only necessary to provide an excitation light incident portion on the back surface of the substrate). ) The cost is not high.

FIG. 3 is a diagram showing a surface emitting semiconductor laser device (VCSEL) according to a third embodiment of the present invention. In Example 3, non-doped DBR 1 is stacked on a semi-insulating GaAs substrate. DBR1 is formed by laminating Al _0.9 Ga _0.1 As / GaAs with a quarter wavelength thickness.

On the non-doped DBR 1, a non-doped GaAs spacer layer 1, an active layer 1 made of GaInNAs / GaAs multiple quantum wells, a non-doped GaAs spacer layer 2, and a non-doped DBR 2 are sequentially stacked. Here, the non-doped DBR2 is also an Al _0.9 Ga _0.1 As / GaAs stack, but the number of layers is smaller than that of the non-doped DBR1.

  Further thereon, an n-type GaAs spacer layer 3, a GaInNAs / GaAs multiple quantum well active layer 2, a GaAs spacer layer 4, a p-type AlAs layer, and a p-type DBR 3 are stacked.

Here, the DBR 3 is composed of a p-type doped Al _0.9 Ga _0.1 As / GaAs laminate, and the thickness thereof is a quarter wavelength thickness.

  In Example 3, a cylindrical mesa structure is formed by etching from the surface of the laminated structure to the middle of the third spacer layer (spacer layer 3). From the side of the mesa structure, selective oxidation is performed to selectively oxidize the AlAs layer to form a current confinement structure. Further, a ring-shaped p-electrode is provided on the surface of the P-type DBR 3 and an n-electrode is formed on the third spacer layer on the mesa bottom surface.

  In the structure of the third embodiment, there are two resonators in the VCSEL: a resonator sandwiched between DBR1 and DBR2, and a resonator sandwiched between DBR2 and DBR3. In Example 3, the Bragg reflection wavelength of each DBR is set to 1300 nm. The resonance wavelength of the resonator is an integral multiple of 1300 nm. Since the number of stacked DBRs 2 is smaller than that of DBR 1 and DBR 3, the two resonators are optically coupled to form a composite resonator having one resonance mode.

  In the VCSEL of the third embodiment, current is confined by the current confinement structure by injecting current from the p electrode and n electrode, and is injected into the second active layer (active layer 2). Emits the light. The light generated in the active layer 2 resonates in the composite resonator and emits laser light perpendicular to the substrate.

  In the VCSEL of Example 3, there is a first active layer (active layer 1) that emits light when excited light is incident, in addition to the second active layer (active layer 2) that emits light by current injection. The active layer 1 has no current injection structure and oscillates by external light injection (incident external excitation light). As an external excitation light source that generates external excitation light, a DFB laser that emits light with a wavelength of 1270 to 1275 nm can be used. Here, if the emission wavelength of the DFB laser is stable, it is not necessary to set the wavelength strictly. For example, if the oscillation wavelength is 1270 to 1275 nm, the incident angle is adjusted in the range of 40 to 45 degrees. External excitation light can be incident from the back surface of the VCSEL (back surface of the substrate) to the inside. For this reason, the wavelength of the DFB laser is not strictly set at a specific wavelength, and as long as temperature control for driving at a constant wavelength is performed, the incident can be performed only by controlling the incident angle.

  When external excitation light is injected into the first active layer (active layer 1), the active layer 1 emits light in the 1.3 μm band, and when it exceeds the threshold, it oscillates in the composite resonator and emits laser light. Since the two active layers have the same mode and oscillate in the composite resonator, the two active layers oscillate at the same wavelength.

  When the first active layer (active layer 1) is continuously oscillated by photoexcitation and a current exceeding the threshold is injected into the second active layer (active layer 2) to cause continuous oscillation, the VCSEL continuously oscillates in a single mode. . At this time, if the value of the injection current to the second active layer (active layer 2) is modulated, the carrier density changes, and the intensity of the oscillating laser beam is modulated accordingly. At this time, laser oscillation light from the first active layer (active layer 1) is added in the same mode, so that the photon density in the VCSEL increases, carrier overflow of the second active layer (active layer 2) can be suppressed, and gain saturation is reduced. It becomes difficult to occur, the relaxation oscillation frequency increases, and high-speed modulation becomes possible. The third embodiment has an oscillation wavelength in the 1.3 μm band that can reduce the influence of dispersion of the quartz optical fiber, and can be used as a light source capable of high-speed transmission at 10 Gbps or higher.

  In a VCSEL suitable for high-speed modulation as described above, since it is possible to use laser light having a wavelength close to the oscillation wavelength of the VCSEL and slightly shorter wavelength as excitation light, excitation efficiency is increased. If the wavelength of the external excitation light source is constant, the incident angle can be controlled according to the wavelength of the light source, so that it can be used in a certain wavelength range, and the degree of freedom of the external excitation light source increases, thereby reducing the cost. It is done. Also, unlike excitation light injection from the lateral direction (side surface direction), there is no need to form a special structure for making excitation light incident on the active layer (it is only necessary to provide an excitation light incident portion on the back surface of the substrate). ) The cost is not high.

  FIG. 4 is a diagram showing a light emitting system of Example 4. The basic configuration of the fourth embodiment is the same as that of the second embodiment except that a plurality of external excitation light sources that generate external excitation light are provided. In the fourth embodiment, two DFB lasers are used as the external excitation light source. However, the number may be increased if possible. In the present invention, since the external excitation light is incident at an angle other than vertical, it becomes easy to simultaneously input external excitations from a plurality of external excitation light sources to the same VCSEL. If a plurality of external excitation light sources can be used, it is possible to use a laser having a lower output as each external excitation light source, thereby reducing the cost. Further, even if the wavelengths of the plurality of external excitation light sources are slightly shifted, it can be used as an external excitation light source without any problem by adjusting the incident angle, which is advantageous in terms of cost.

  FIG. 5 is a diagram showing a light emitting system of Example 5. The basic configuration of the fifth embodiment is the same as that of the second embodiment except that a VCSEL is used as an external excitation light source that generates external excitation light. The VCSEL has a laser structure that can be easily integrated in a small size and is known as a small and inexpensive semiconductor laser. Therefore, by using this as an external excitation light source, a small light emitting system can be configured at a lower cost. In the fifth embodiment, a plurality of VCSELs can be used as the external excitation light source. Since the output of a VCSEL is generally lower than that of an edge-emitting type, it is advantageous to use a plurality of elements when used as an external excitation light source.

  FIG. 6 is a diagram illustrating an optical transmission system according to a sixth embodiment. Referring to FIG. 6, in the optical transmission unit, the electrical signal is converted into an optical signal and introduced into the optical fiber cable. The light guided through the optical fiber cable is converted again into an electrical signal by the optical receiver and output.

  The optical transmitter and the optical receiver are integrated in one package and configured as an optical transceiver module (optical communication module). Two pairs of optical fiber cables, one for sending and one for receiving, are paired and can communicate bidirectionally.

The laser device of the second embodiment is used as the light source in the optical transmission unit of the optical transmission system of the sixth embodiment. The laser device according to the second embodiment has an improved relaxation oscillation frequency, can perform high-speed modulation, and can transmit a signal with a high bit rate. In this embodiment, it has an oscillation wavelength in the 1.3 μm band that can reduce the influence of dispersion of the quartz optical fiber, and can be used as a light source capable of high-speed transmission at 10 Gbps or higher. In a system suitable for high-speed modulation as described above, it becomes possible to use laser light having a wavelength close to the oscillation wavelength of the VCSEL and slightly shorter wavelength as excitation light, so that excitation efficiency is increased. If the wavelength of the external excitation light source is constant, the incident angle can be controlled according to the wavelength of the external excitation light source, so that the light in a certain wavelength range can be used. Can be lowered. Further, unlike excitation light injection (incident) from the lateral direction (side direction), it is not necessary to form a special structure in order to make the excitation light incident on the active layer, and the cost does not increase.

1 is a diagram showing a surface emitting semiconductor laser device (VCSEL) of Example 1. FIG. 6 is a diagram showing a surface emitting semiconductor laser device (VCSEL) of Example 2. FIG. 6 is a diagram showing a surface emitting semiconductor laser device (VCSEL) of Example 3. FIG. It is a figure which shows the light emission system of Example 4. It is a figure which shows the light emission system of Example 5. FIG. FIG. 10 illustrates an optical transmission system according to a sixth embodiment. It is a figure which shows the relationship between the incident angle of external excitation light, and an apparent resonance mode wavelength.

Claims (9)

In a vertical cavity surface emitting semiconductor laser device having a resonator structure sandwiched between upper and lower layers by a multilayer reflector on a substrate, the resonator structure has an active region excited by external excitation light The external pumping light is shorter than the resonance mode wavelength of the resonator structure and has a wavelength in the high reflectivity band of the multilayer reflector, and the external pumping light to the resonator structure is Using the fact that the apparent resonance mode in the resonator structure shifts to the short wavelength side when the incident angle is gradually shifted from the normal incidence direction to the side surface direction, the wavelength of the external excitation light is short. A vertical cavity surface emitting semiconductor laser device characterized in that an incident angle of the external excitation light can be set so as to coincide with a wavelength of an apparent resonant mode. In a vertical cavity surface emitting semiconductor laser device having a resonator structure sandwiched between upper and lower layers by a multilayer reflector on a substrate, a first active region that emits light by current injection in the resonator structure And a second active region that emits light by external excitation light, and the first active region that emits light by current injection and the second active region that emits light by external excitation light have the same resonance mode wavelength The external pumping light has a wavelength shorter than the resonance mode wavelength of the resonator structure and has a wavelength in the high reflectivity band of the multilayer reflector, and is externally pumped to the resonator structure. Utilizing the fact that the apparent resonance mode in the resonator structure shifts to the short wavelength side when the incident angle of light is gradually shifted from the vertical incident direction to the side surface direction, the wavelength of the external excitation light is Wave of apparent resonance mode with shorter wavelength And to match the external excitation vertical cavity surface, characterized in that it becomes the incident angle can be set in the light-emitting semiconductor laser device. A vertical cavity surface emitting semiconductor laser having a plurality of resonator structures sandwiched between upper and lower layers by a multilayer film reflector on a substrate and optically coupling the plurality of resonator structures to form one resonance mode The device has a first active region that emits light by current injection in one resonator structure, and a second active region that emits light by external excitation light in another resonator structure, and emits light by current injection. The first active region that emits light and the second active region that emits light with external excitation light have a gain with respect to the same resonance mode wavelength, and the external excitation light is shorter than the resonance mode wavelength of the resonator structure. And having a wavelength in the high reflectivity band of the multilayer reflector, and in the resonator structure when the incident angle of the external excitation light to the resonator structure is gradually shifted from the vertical incident direction to the side surface direction The apparent resonance mode shifts to the short wavelength side The incident angle of the external excitation light can be set so that the wavelength of the external excitation light matches the apparent wavelength of the resonant mode. Vertical cavity surface emitting semiconductor laser device. 4. The vertical cavity surface emitting semiconductor laser device according to claim 1, wherein a plurality of external excitation lights are used as the external excitation light. 5. Light emitting semiconductor laser device. 5. The vertical cavity surface emitting semiconductor laser device according to claim 1, wherein a mixed crystal semiconductor containing nitrogen and other group V elements is used in the active region. A vertical cavity surface emitting semiconductor laser device characterized by the above. A vertical cavity surface emitting semiconductor laser device according to any one of claims 1 to 5, and an external excitation light source that generates external pumping light incident on the vertical cavity surface emitting semiconductor laser device. A light emitting system comprising: 7. The light emitting system according to claim 6, wherein the external excitation light source is a semiconductor laser. 8. The light emitting system according to claim 6, wherein the external excitation light source is a vertical cavity surface emitting semiconductor laser element. 6. An optical transmission system, wherein the vertical cavity surface emitting semiconductor laser device according to claim 1 is used.

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