JP2006253533A5 - - Google Patents
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- JP2006253533A5 JP2006253533A5 JP2005070463A JP2005070463A JP2006253533A5 JP 2006253533 A5 JP2006253533 A5 JP 2006253533A5 JP 2005070463 A JP2005070463 A JP 2005070463A JP 2005070463 A JP2005070463 A JP 2005070463A JP 2006253533 A5 JP2006253533 A5 JP 2006253533A5
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Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005070463A JP4504233B2 (en) | 2005-03-14 | 2005-03-14 | Semiconductor device and manufacturing method thereof |
| DE102005062444.8A DE102005062444B4 (en) | 2005-03-14 | 2005-12-27 | Semiconductor devices and semiconductor device manufacturing methods |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005070463A JP4504233B2 (en) | 2005-03-14 | 2005-03-14 | Semiconductor device and manufacturing method thereof |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006253533A JP2006253533A (en) | 2006-09-21 |
| JP2006253533A5 true JP2006253533A5 (en) | 2008-01-17 |
| JP4504233B2 JP4504233B2 (en) | 2010-07-14 |
Family
ID=36973770
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005070463A Active JP4504233B2 (en) | 2005-03-14 | 2005-03-14 | Semiconductor device and manufacturing method thereof |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP4504233B2 (en) |
| DE (1) | DE102005062444B4 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7298467B2 (en) * | 2019-12-17 | 2023-06-27 | 三菱電機株式会社 | Semiconductor modules and semiconductor devices |
| CN115621233B (en) * | 2022-12-01 | 2023-05-16 | 清华大学 | A shell for full accuse formula power electronic device |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3291977B2 (en) * | 1995-05-31 | 2002-06-17 | 三菱電機株式会社 | Pressure contact type semiconductor element, method of manufacturing the same, and pressure contact type semiconductor device |
| DE19800469A1 (en) | 1998-01-09 | 1999-07-15 | Asea Brown Boveri | Low inductively controlled, gate controlled thyristor |
| JP3390653B2 (en) * | 1998-03-10 | 2003-03-24 | 三菱電機株式会社 | Semiconductor switching device, semiconductor stack device and power conversion device using the same |
| JP4129082B2 (en) * | 1998-07-30 | 2008-07-30 | 三菱電機株式会社 | Pressure contact type semiconductor device, ring-shaped gate terminal thereof, and power application device |
| JP4137309B2 (en) * | 1999-09-06 | 2008-08-20 | 三菱電機株式会社 | Gate commutation type semiconductor device |
| JP4077130B2 (en) | 2000-02-01 | 2008-04-16 | 三菱電機株式会社 | Gate commutation type turn-off thyristor module |
| US6445013B1 (en) | 2000-04-13 | 2002-09-03 | Mitsubishi Denki Kabushiki Kaisha | Gate commutated turn-off semiconductor device |
| JP4125908B2 (en) | 2002-03-28 | 2008-07-30 | 三菱電機株式会社 | Semiconductor device |
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2005
- 2005-03-14 JP JP2005070463A patent/JP4504233B2/en active Active
- 2005-12-27 DE DE102005062444.8A patent/DE102005062444B4/en active Active