JP2006245806A - Semiconductor device and photographic apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of easily solving the troublesomeness of managing a solid-state imaging device and a semiconductor device with different chips, and solving troublesomeness of managing the characteristic information of an image forming means to be used paired with the solid-state imaging device and used, and to provide a photographic apparatus. <P>SOLUTION: A coupling member 60 integrates a CCD 24 for acquiring an image signal indicating an object image by imaging; and a memory 25 for storing information, indicating the predetermined characteristic of the CCD 24, and information indicating the predetermined characteristic of a lens for forming the image of the object on an imaging position of the CCD 24, in a state where they are each a different chip. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a semiconductor device and an imaging device, and more particularly, to a semiconductor device including a solid-state imaging element and a semiconductor memory element, and an imaging device equipped with the semiconductor device.

  In recent years, with the increase in resolution of solid-state imaging devices such as CCD (Charge Coupled Device) area sensors and CMOS (Complementary Metal Oxide Semiconductor) image sensors, digital cameras, mobile phones, PDAs (Personal Digital Assistants, personal digital assistants), etc. The demand for information equipment having a photographing function is rapidly increasing.

  By the way, in a solid-state imaging device, in general, pixel defects (so-called white scratches) caused by accumulation of heat generated in the photodiode regardless of light incidence, or dust on the photodiode. And the like, and pixel defects (so-called black scratches) caused by a reduction in the amount of incident light exist. For this reason, conventionally, the position where the solid-state image sensor has a pixel defect is stored in advance in a semiconductor memory element of a chip different from the solid-state image sensor, and the video signal output from the solid-state image sensor is stored in the semiconductor memory element. There has been a technique for correcting a signal of a pixel that matches the stored position information.

  However, since the position of the pixel defect generated in the solid-state image sensor differs for each solid-state image sensor, a semiconductor memory element for recording the position where the pixel defect occurs needs to be prepared for each solid-state image sensor. For this reason, it is necessary to manage the solid-state imaging element and the semiconductor memory element in pairs, and management from inventory management to camera mounting after shipment is extremely troublesome.

  In order to solve this problem, Patent Document 1 discloses a technique in which a memory for storing position information of pixel defects generated in the solid-state imaging device is provided on the same chip on which the solid-state imaging device is provided. Yes.

This technique eliminates the need to use a separate chip memory, and thus eliminates the need to manage the solid-state imaging device and the memory in pairs.
JP-A-10-210373

  However, the technique disclosed in Patent Document 1 has a problem in that it is necessary to form the solid-state imaging element and the semiconductor memory element on the same chip, and it is extremely difficult to manufacture the chip. In particular, when the solid-state image sensor is a CCD area sensor, it is extremely difficult to form the solid-state image sensor and the semiconductor memory element on the same chip.

  On the other hand, the solid-state imaging device is used in a state where it is combined with imaging means for forming a subject image at the imaging position of the solid-state imaging device. For this reason, it is preferable that the characteristic information of the imaging unit is managed in pairs with the characteristic information of the solid-state imaging device combined with the imaging unit.

  On the other hand, the technique disclosed in Patent Document 1 does not consider the management of the characteristic information of the imaging means combined with the solid-state imaging element, and the management of the characteristic information is extremely troublesome. There was also.

  The present invention has been made to solve the above-described problems, and can easily eliminate the complexity of managing the solid-state imaging device and the semiconductor memory device with separate chips and is used in pairs with the solid-state imaging device. It is an object of the present invention to provide a semiconductor device and a photographing device that can eliminate the complexity of management of characteristic information relating to the image forming means.

  In order to achieve the above object, a semiconductor device according to claim 1 is a solid-state imaging device that acquires an image signal indicating a subject image by imaging, information indicating a predetermined characteristic related to the solid-state imaging device, and imaging of the solid-state imaging device. A semiconductor memory element for storing information indicating predetermined characteristics relating to an image forming means for forming a subject image at a position; and an integrated means for integrating the solid-state image pickup element and the semiconductor memory element in a separate chip state. It is equipped with.

  In the semiconductor device according to claim 1, an image signal indicating a subject image is acquired by imaging with a solid-state imaging element, and information indicating predetermined characteristics regarding the solid-state imaging element and imaging of the solid-state imaging element are acquired by the semiconductor storage element. Information indicating predetermined characteristics related to the image forming means for forming the subject image at the position is stored. Note that the solid-state imaging device includes a CCD area sensor and a CMOS image sensor. The semiconductor memory elements include ROM (Read Only Memory), EEPROM (Electrically Erasable and Programmable ROM), flash memory, and battery-backed RAM (Random Access Memory).

  Here, in the semiconductor device of the present invention, the solid-state imaging element and the semiconductor memory element are integrated in a separate chip state by the integration unit. The integration of the solid-state imaging device and the semiconductor memory device by the integration means is the same as the integration of each element other than the integration by adhesion using an adhesive or the coupling member that mechanically couples each element. Integration by sealing in a mold is included.

  Thus, according to the semiconductor device of claim 1, the solid-state imaging device that acquires the image signal indicating the subject image by imaging, the information indicating the predetermined characteristics regarding the solid-state imaging device, and the imaging position of the solid-state imaging device Since the solid-state image sensor and the semiconductor memory element are managed in separate chips, the semiconductor memory elements for storing information indicating the predetermined characteristics relating to the imaging means for forming the subject image are integrated in separate chips. Can be easily eliminated, and the complexity of managing characteristic information regarding the imaging means used in pairs with the solid-state imaging device can be eliminated.

  In the present invention, the semiconductor memory element may be nonvolatile as in the invention described in claim 2. As a result, information indicating predetermined characteristics regarding the solid-state imaging device and the imaging means can be held in the semiconductor memory element, and convenience can be improved.

  In the present invention, the semiconductor memory element may be electrically rewritable as in the invention described in claim 3. As a result, information can be easily stored in the semiconductor memory element, and it is possible to cope with a change with time of predetermined characteristics relating to the solid-state imaging element and the imaging means.

  Further, according to the present invention, as in the invention described in claim 4, the information indicating the predetermined characteristics regarding the solid-state image sensor, the information indicating the position of the defective pixel of the solid-state image sensor, and the sensitivity characteristics of the solid-state image sensor. Information indicating the smear characteristic of the solid-state image sensor, and information indicating the driving voltage of the solid-state image sensor, and information indicating the predetermined characteristic regarding the imaging unit is an aberration characteristic of the imaging unit And at least one of information indicating the transmittance characteristics of the imaging means. This makes it possible to execute processing based on the applied information.

  Further, according to the present invention, as in the invention described in claim 5, the integration unit may be configured such that the solid-state imaging element and the semiconductor memory element can be separated. As a result, the combination of the solid-state image sensor and the semiconductor memory element can be changed as appropriate, and the versatility of the solid-state image sensor and the semiconductor memory element can be improved.

  On the other hand, in order to achieve the above object, an imaging device according to claim 6 is an image acquired by the semiconductor device according to any one of claims 1 to 5 and the solid-state imaging element of the semiconductor device. Recording means for recording a signal; and processing execution means for executing a predetermined process based on information stored in the semiconductor memory element of the semiconductor device.

  According to a sixth aspect of the present invention, there is provided a semiconductor device of the present invention.

  In the present invention, the image signal acquired by the solid-state imaging element of the semiconductor device is recorded by the recording unit, and the processing execution unit performs predetermined processing based on information stored in the semiconductor storage element of the semiconductor device. Processing is executed.

  Thus, according to the imaging device of the sixth aspect, since the semiconductor device of the present invention is provided, similarly to the semiconductor device, the complexity of managing the solid-state imaging element and the semiconductor memory element with separate chips. Can be easily eliminated, and the complexity of management of characteristic information regarding the imaging means used in pairs with the solid-state imaging device can be eliminated.

  According to the present invention, a solid-state imaging device that acquires an image signal indicating a subject image by imaging, information indicating predetermined characteristics related to the solid-state imaging device, and an imaging unit that forms the subject image at an imaging position of the solid-state imaging device Since the semiconductor memory elements for storing information indicating the predetermined characteristics related to each other are integrated in the state of separate chips, it is possible to easily eliminate the complexity of managing the solid-state imaging element and the semiconductor memory element by separate chips. In addition, it is possible to obtain an effect that it is possible to eliminate the complexity of managing characteristic information regarding the imaging means used in pairs with the solid-state imaging device.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Here, the case where the semiconductor device and the photographing device of the present invention are applied to a digital electronic still camera (hereinafter referred to as “digital camera”) will be described.

  First, an external configuration of the digital camera 10 according to the present embodiment will be described with reference to FIG.

  In front of the digital camera 10, a lens 21 for forming a subject image, a strobe 44 that emits light to irradiate the subject when necessary, and a viewfinder used to determine the composition of the subject to be photographed. 20 is provided. Further, on the upper surface of the digital camera 10, a release switch (so-called shutter) 56A, a power switch 56B, and a mode changeover switch 56C that are pressed when performing shooting are provided.

  Note that the release switch 56A of the digital camera 10 according to the present embodiment is pressed down to an intermediate position (hereinafter referred to as “half-pressed state”) and to a final pressed position beyond the intermediate position. A two-stage pressing operation of a state (hereinafter referred to as a “fully pressed state”) can be detected.

  In the digital camera 10, the release switch 56A is pressed halfway to activate the AE (Automatic Exposure) function and set the exposure state (shutter speed, aperture state), and then AF (Auto Focus). , Automatic focusing) function is performed to control focusing, and then exposure (photographing) is performed when the button is fully pressed.

  The mode changeover switch 56C is rotated when setting to any one of a shooting mode that is a mode for shooting and a playback mode that is a mode for playing back a subject image on the LCD 38 described later.

  On the other hand, on the back surface of the digital camera 10, an eyepiece of the finder 20, a liquid crystal display (hereinafter referred to as “LCD”) 38 for displaying a photographed subject image, a menu screen, and the like, and a cross cursor switch 56D. And are provided. The cross-cursor switch 56D includes four arrow keys that indicate four moving directions of up, down, left, and right in the display area of the LCD 38.

  Furthermore, on the back of the digital camera 10, a menu switch that is pressed when displaying the menu screen on the LCD 38, a determination switch that is pressed when confirming the operation content up to that point, and the previous operation content are displayed. A cancel switch that is pressed when canceling, a strobe switch that is pressed when setting the light emission state of the strobe 44, and a macro shooting switch that is pressed when performing macro shooting are provided. .

  Next, with reference to FIG. 2, the configuration of the main part of the electrical system of the digital camera 10 according to the present embodiment will be described.

  The digital camera 10 includes an optical unit 22 configured to include the lens 21 described above, and a semiconductor device 23 having a charge coupled device (hereinafter referred to as “CCD”) 24 disposed behind the optical axis of the lens 21. And an analog signal processing unit 26 that performs various analog signal processing on the input analog signal. The configuration of the semiconductor device 23 particularly related to the present invention will be described in detail later.

  The digital camera 10 also performs an analog / digital converter (hereinafter referred to as “ADC”) 28 that converts an input analog signal into digital data, and performs various digital signal processing on the input digital data. And a digital signal processing unit 30.

  The digital signal processing unit 30 has a built-in line buffer having a predetermined capacity, and also performs control to directly store the input digital data in a predetermined area of the memory 48 described later.

  The output terminal of the CCD 24 is connected to the input terminal of the analog signal processing unit 26, the output terminal of the analog signal processing unit 26 is connected to the input terminal of the ADC 28, and the output terminal of the ADC 28 is connected to the input terminal of the digital signal processing unit 30. . Accordingly, the analog signal indicating the subject image output from the CCD 24 is subjected to predetermined analog signal processing by the analog signal processing unit 26, converted into digital image data by the ADC 28, and then input to the digital signal processing unit 30.

  On the other hand, the digital camera 10 generates a signal for displaying a subject image, a menu screen or the like on the LCD 38 and supplies the signal to the LCD 38, and a CPU (Central Processing Unit) 40 that controls the operation of the entire digital camera 10. A memory 48 that temporarily stores digital image data obtained by photographing, and a memory interface 46 that controls access to the memory 48 are included.

  Further, the digital camera 10 includes an external memory interface 50 for enabling the portable memory card 52 to be accessed by the digital camera 10, and a compression / decompression processing circuit 54 for performing compression processing and decompression processing on the digital image data. It is configured to include.

  In the digital camera 10 of the present embodiment, a flash memory is used as the memory 48, and a smart media (Smart Media (registered trademark)) is used as the memory card 52.

  The digital signal processing unit 30, the LCD interface 36, the CPU 40, the memory interface 46, the external memory interface 50, and the compression / decompression processing circuit 54 are connected to each other via a system bus BUS. Therefore, the CPU 40 controls the operation of the digital signal processing unit 30 and the compression / decompression processing circuit 54, displays various information via the LCD interface 36 to the LCD 38, and the memory interface 46 or the external memory interface to the memory 48 and the memory card 52. 50 can be accessed each.

  On the other hand, the digital camera 10 includes a timing generator 32 that mainly generates a timing signal for driving the CCD 24 and supplies the timing signal to the CCD 24, and the driving of the CCD 24 is controlled by the CPU 40 via the timing generator 32.

  Further, the digital camera 10 is provided with a motor drive unit 34, and driving of a focus adjustment motor, a zoom motor, and an aperture drive motor (not shown) provided in the optical unit 22 is also controlled by the CPU 40 via the motor drive unit 34. The

  In other words, the lens 21 according to the present embodiment has a plurality of lenses, is configured as a zoom lens that can change (magnify) the focal length, and includes a lens driving mechanism (not shown). The lens drive mechanism includes the focus adjustment motor, the zoom motor, and the aperture drive motor, and these motors are each driven by a drive signal supplied from the motor drive unit 34 under the control of the CPU 40.

  Further, various switches such as the release switch 56A, the power switch 56B, the mode switch 56C, the cross cursor switch 56D, and the menu switch (generically referred to as “operation unit 56” in the figure) are connected to the CPU 40. The CPU 40 can always grasp the operation state with respect to the operation unit 56.

  In addition, the digital camera 10 includes a charging unit 42 that is interposed between the strobe 44 and the CPU 40 and charges power for causing the strobe 44 to emit light under the control of the CPU 40. Further, the strobe 44 is also connected to the CPU 40, and the light emission of the strobe 44 is controlled by the CPU 40.

  Next, the configuration of the semiconductor device 23 according to the present embodiment will be described with reference to FIG.

  As shown in FIGS. 3A and 3B, the semiconductor device 23 according to the present embodiment has a CCD 24 and a memory 25 each configured as a DIP (Dual Inline Package), and the CCD 24 and the memory 25 separately. And a connecting member 60 that is integrated in a chip state.

  The connecting member 60 is provided with an opening for fitting one end portion where the lead frame of the CCD 24 does not protrude on one side surface in FIG. 3 and one end where the lead frame of the memory 25 does not protrude on the other side surface. An opening for fitting the part is provided, and the CCD 24 and the memory 25 are joined.

  In the semiconductor device 23, as shown in FIG. 3A, one end portion of the CCD 24 is inserted into one side surface of the connecting member 60, and one end portion of the memory 25 is inserted into the other side surface. Thus, as shown in FIG. 3B, the CCD 24 and the memory 25 are integrated.

  The memory 25 of the semiconductor device 23 stores information indicating predetermined characteristics related to the CCD 24 integrated as the semiconductor device 23 and predetermined characteristics related to the lens 21 used in the digital camera 10 on which the semiconductor device 23 is mounted. Is stored.

  FIG. 4 schematically shows a data structure of information stored in the memory 25 of the semiconductor device 23 according to the present embodiment.

  As shown in the figure, in the present embodiment, information indicating the position of a pixel defect of the CCD 24 and sensitivity characteristics of the CCD 24 are shown as information indicating predetermined characteristics related to the CCD 24 (hereinafter referred to as “CCD characteristic information”). Information indicating the smear characteristics of the CCD 24 and information indicating the drive voltage of the CCD 24 are stored in the memory 25. Further, as information indicating the predetermined characteristics regarding the lens 21 (hereinafter referred to as “lens characteristic information”), information indicating the aberration characteristics of the lens 21 (including distortion and chromatic aberration) and the transmittance characteristics of the lens 21 are used. Information shown is stored in the memory 25.

  Although this information may be stored in the memory 25 at any timing, in this embodiment, the CCD characteristic information is stored at the timing when the CCD 24 and the memory 25 are integrated, and the semiconductor device 23 is stored in the digital camera 10. The lens characteristic information is stored at the timing of incorporation. As a result, it is possible to prevent the occurrence of a mismatch in correspondence between the stored contents of the memory 25 and the CCD 24 and the lens 21 integrated in the memory 25.

  In the present embodiment, a non-volatile and electrically rewritable memory (specifically, a flash memory) is applied as the memory 25. Thereby, CCD characteristic information and lens characteristic information can be held, convenience can be improved, information can be easily stored in the memory 25, and the above-described characteristics relating to the CCD 24 and the lens 21 can be stored. It is possible to cope with the change with time.

  The memory 25 is electrically connected to the CPU 40, and the CPU 40 can access the memory 25.

  Next, the operation of the digital camera 10 according to the present embodiment at the time of shooting will be described.

  First, the CCD 24 performs imaging through the optical unit 22 and sequentially outputs analog signals for R (red), G (green), and B (blue) indicating the subject image to the analog signal processing unit 26. The analog signal processing unit 26 performs analog signal processing such as correlated double sampling processing on the analog signal input from the CCD 24 and sequentially outputs the analog signal to the ADC 28.

  The ADC 28 converts the R, G, and B analog signals input from the analog signal processing unit 26 into 12-bit R, G, and B signals (digital image data) and sequentially outputs them to the digital signal processing unit 30. To do. The digital signal processing unit 30 accumulates digital image data sequentially input from the ADC 28 in a built-in line buffer and temporarily stores the digital image data directly in a predetermined area of the memory 48.

  The digital image data stored in a predetermined area of the memory 48 is read out by the digital signal processing unit 30 according to the control by the CPU 40, and is subjected to white gain by applying a digital gain for each of R, G, and B according to a predetermined physical quantity. In addition to performing balance adjustment, gamma processing and sharpness processing are performed to generate 8-bit digital image data.

  The digital signal processing unit 30 corrects defective pixels of the CCD 24 based on the CCD characteristic information stored in the memory 25 of the semiconductor device 23 for the generated 8-bit digital image data. 1), sensitivity correction according to the sensitivity characteristic of the CCD 24, and image correction according to the smear characteristic of the CCD 24, and aberration correction according to the aberration characteristic of the lens 21 based on the lens characteristic information And image correction according to the transmittance characteristic of the lens 21 is performed. Note that any of these correction processes can be performed using a conventionally known technique, and thus further description thereof is omitted here.

  The digital signal processing unit 30 performs YC signal processing on the digital image data after the above various correction processes to generate a luminance signal Y and chroma signals Cr and Cb (hereinafter referred to as “YC signal”). The YC signal is stored in an area different from the predetermined area of the memory 48.

  The LCD 38 is configured to display a moving image (through image) obtained by continuous imaging by the CCD 24 and can be used as a finder. When the LCD 38 is used as a finder, the LCD 38 is generated. The YC signals thus output are sequentially output to the LCD 38 via the LCD interface 36. As a result, a through image is displayed on the LCD 38.

  Here, at the timing when the release switch 56A is half pressed by the user, after the AE function is activated and the exposure state is set as described above, the AF function is activated and the focus control is performed, and then the fully pressed state is continued. The YC signal stored in the memory 48 at that time is compressed in a predetermined compression format (in this embodiment, JPEG format) by the compression / decompression processing circuit 54 and then the external memory interface 50 is To the memory card 52 as an electronic file (image file).

  The drive voltage information in the CCD characteristic information is applied in power supply control for the CCD 24 by the CPU 40. With this control, the CCD 24 can be operated with high performance.

  As described above in detail, in the semiconductor device 23 according to the present embodiment, the solid-state imaging device (here, the CCD 24) that acquires an image signal indicating a subject image by imaging and the predetermined characteristics relating to the solid-state imaging device are shown. Information (here, CCD characteristic information) and information (here, lens characteristic information) indicating predetermined characteristics relating to the imaging means (here, the lens 21) for forming a subject image at the imaging position of the solid-state imaging device are stored. Since the semiconductor memory element (here, the memory 25) is integrated in a separate chip state by the integration means (here, the connecting member 60), the solid-state imaging element and the semiconductor memory element are separated in a separate chip. The complexity of management can be easily eliminated, and the complexity of management of characteristic information relating to the imaging means used in pairs with the solid-state imaging device can be eliminated.

  Further, in the semiconductor device 23 according to the present embodiment, since the semiconductor memory element is nonvolatile, the semiconductor memory element can hold information indicating predetermined characteristics regarding the solid-state imaging element and the imaging unit, Convenience can be improved.

  In the semiconductor device 23 according to the present embodiment, since the semiconductor memory element can be electrically rewritten, information can be easily stored in the semiconductor memory element, and the solid-state imaging element and the connection can be stored. It is possible to cope with a change with time of a predetermined characteristic relating to the image means.

  Further, in the semiconductor device 23 according to the present embodiment, the information indicating the predetermined characteristics regarding the solid-state image sensor includes information indicating the position of the defective pixel of the solid-state image sensor, information indicating the sensitivity characteristics of the solid-state image sensor, Information indicating smear characteristics of the solid-state imaging device and information indicating drive voltage of the solid-state imaging device, information indicating the predetermined characteristics regarding the imaging means, information indicating the aberration characteristics of the imaging means, and the imaging Since the information indicates the transmittance characteristics of the means, it is possible to execute a suitable process based on the information.

  Furthermore, in the semiconductor device 23 according to the present embodiment, the integration unit is configured so that the solid-state image sensor and the semiconductor memory element can be separated, so that the combination of the solid-state image sensor and the semiconductor memory element is appropriately changed. It is possible to improve the versatility of the solid-state image sensor and the semiconductor memory element.

  On the other hand, since the digital camera 10 according to the present embodiment includes the semiconductor device 23 as described above, similarly to the semiconductor device 23, the complexity of managing the solid-state imaging element and the semiconductor memory element with separate chips. Can be easily eliminated, and the complexity of management of characteristic information regarding the imaging means used in pairs with the solid-state imaging device can be eliminated.

  In the present embodiment, the case where the connecting member 60 configured so that the solid-state imaging element and the semiconductor memory element are separable is applied as the integration unit of the present invention. However, the present invention is not limited to this. Rather, the solid-state image sensor and the semiconductor memory element cannot be separated. As an example, a mold that integrally seals the solid-state image sensor (CCD) and the semiconductor memory element (memory) as shown in FIG. 5 is applied. It can also be set as the form to do. In this case, the same effects as those of the present embodiment can be obtained except for the effect of improving the versatility of the solid-state imaging element and the semiconductor memory element.

  In the present embodiment, the case where the connecting member 60 configured separately from the CCD 24 and the memory 25 is applied as the integration unit of the present invention has been described. However, the present invention is not limited to this. For example, a connecting member such as a connector that can be connected to each other can be provided at one end of the CCD 24 where the lead frame is not exposed and at one end of the memory 25 where the lead frame is not exposed. In this case, the number of members for configuring the semiconductor device can be reduced, and the complexity of managing the members configuring the semiconductor device can be reduced.

  In the present embodiment, the case where the CCD is applied as the solid-state imaging device of the present invention has been described. However, the present invention is not limited to this, and for example, a CMOS image sensor is applied. You can also. Also in this case, the same effects as in the present embodiment can be obtained.

  In the present embodiment, the case where the flash memory is applied as the semiconductor memory element of the present invention has been described. However, the present invention is not limited to this, for example, ROM, EEPROM, battery-backed RAM Etc. may be applied. Also in this case, the same effects as in the present embodiment can be obtained.

  In addition, the configuration of the digital camera 10 according to the present embodiment (see FIGS. 1 and 2) is an example, and it is needless to say that the configuration can be appropriately changed without departing from the gist of the present invention.

  The configuration of the semiconductor device 23 according to the present embodiment (see FIG. 3) is also an example, and it is needless to say that the configuration can be appropriately changed without departing from the gist of the present invention.

  The CCD characteristic information and the lens characteristic information (see FIG. 4) described in the present embodiment are also examples, and it goes without saying that they can be changed as appropriate without departing from the gist of the present invention.

  Further, in the present embodiment, the case where the present invention is applied to a digital camera has been described. However, the present invention forms a subject image at a solid-state imaging device such as a PDA or a cellular phone and an imaging position of the solid-state imaging device. Needless to say, the present invention can be applied to any information device having an imaging means.

It is an external view which shows the external appearance of the digital camera which concerns on embodiment. It is a block diagram which shows the principal part structure of the electric system of the digital camera which concerns on embodiment. It is a top view which shows the structure of the semiconductor device which concerns on embodiment. It is a schematic diagram which shows the data structure of CCD characteristic information and lens characteristic information memorize | stored in the memory of the semiconductor device which concerns on embodiment. It is a top view which shows the structure of the modification of a semiconductor device.

Explanation of symbols

10 Digital camera 21 Lens (imaging means)
23 Semiconductor Device 24 CCD (Solid-State Imaging Device)
25 Memory (semiconductor memory device)
30 Digital signal processing unit (processing execution means)
40 CPU (recording means)
60 connecting member (integration means)

Claims (6)

A solid-state imaging device that acquires an image signal indicating a subject image by imaging; and
A semiconductor storage element for storing information indicating predetermined characteristics related to the solid-state image sensor and information indicating predetermined characteristics related to an image forming unit that forms a subject image at an imaging position of the solid-state image sensor;
An integration means for integrating the solid-state imaging element and the semiconductor storage element in a separate chip state;
A semiconductor device comprising: The semiconductor device according to claim 1, wherein the semiconductor memory element is nonvolatile. The semiconductor device according to claim 1, wherein the semiconductor memory element is electrically rewritable. Information indicating a predetermined characteristic related to the solid-state image sensor, information indicating a position of a defective pixel of the solid-state image sensor, information indicating a sensitivity characteristic of the solid-state image sensor, information indicating a smear characteristic of the solid-state image sensor, and the solid At least one piece of information indicating the driving voltage of the image sensor,
The information indicating the predetermined characteristic regarding the imaging unit is at least one of information indicating the aberration characteristic of the imaging unit and information indicating the transmittance characteristic of the imaging unit. The semiconductor device according to 1. The semiconductor device according to claim 1, wherein the integration unit is configured so that the solid-state imaging element and the semiconductor memory element can be separated. A semiconductor device according to any one of claims 1 to 5,
Recording means for recording an image signal acquired by the solid-state imaging device of the semiconductor device;
Processing execution means for executing predetermined processing based on information stored in the semiconductor memory element of the semiconductor device;
An imaging device with

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