JP2006237255A - Optical characteristic measuring apparatus, optical characteristic measuring method, exposure apparatus, and device manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an optical characteristic measuring apparatus 2 for realizing effective measurement, and also to provide an optical characteristic measuring method without deterioration in movement performance of a moving stage. <P>SOLUTION: The optical characteristic measuring apparatus comprises: a wave-front aberration measuring unit 35 unloadably allocated to a wafer stage WST to provide a light receiving surface 36 for measuring wave-front aberration of a projected optical system; a loading/unloading mechanism for loading and unloading the wave-front aberration measuring unit 35 to and from the wafer stage WST; and a controller for controlling the loading/unloading mechanism to join or separate the wafer stage WST and the wave-front aberration measuring unit 35. The loading/unloading mechanism loads or unloads the wave-front aberration measuring unit 35 at the drawing position separated from the measuring position as the position to measure the wave-front aberration of the projected optical system. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an optical characteristic measuring apparatus, an optical characteristic measuring method, an exposure apparatus, and a device manufacturing method.

  Conventionally, devices have been manufactured using an exposure apparatus. For example, in such an exposure apparatus, a reticle or photomask on which a pattern is formed is placed on a stage that can move in the scanning direction, and exposure light is irradiated onto the reticle or photomask from an illumination optical system. Then, the pattern is projected onto a substrate such as a wafer or a glass plate placed on a stage movable in the XY directions by a projection optical system. At this time, devices such as a semiconductor element, a liquid crystal display element, an imaging element, and a thin film magnetic head are manufactured by scanning both the reticle stage and the wafer stage in synchronization.

  By the way, in recent years, further increase in the density of semiconductor devices and the like has progressed, and accordingly, circuit patterns manufactured by an exposure apparatus have been required to be miniaturized. As the density of such semiconductor devices increases, the exposure accuracy of the exposure apparatus has a greater influence on the accuracy of the semiconductor device. In such an exposure apparatus, for example, the optical characteristics of the projection optical system are carefully adjusted by a measuring apparatus having a wavefront measuring function. This measuring apparatus is attached to a stage on which a reticle or wafer is placed.

On the other hand, cases of producing large-sized devices such as liquid crystal display devices and cases of producing a large number of semiconductor devices on a large wafer having a diameter of 300 mm are increasing. In this case, in order to increase productivity, It becomes necessary to move the wafer stage at a higher speed. Therefore, in order to maximize the motion characteristics of the stage during normal operation, efforts have been made to improve the stage performance by reducing the inertial mass in units of 1 gram by making it possible to attach and detach a mechanism that is not normally used, particularly a measuring device. For example, Patent Document 1 describes a configuration in which a measurement unit, which is a sensor portion that measures the wavefront aberration of a projection optical system, is detachably attached to a recess formed in a wafer stage.
International Publication No. WO99 / 60361 Pamphlet

  However, although the measurement unit described in Patent Document 1 can ensure the stage performance by removing it from the exposure apparatus during normal times other than during measurement, it is bothered from the outside of the exposure apparatus and manually attached during measurement. I had to.

  In more detail, the bracket structure for attaching the measurement unit is formed on the stage side to which the measurement unit is attached. The bracket structure is formed with engaged portions such as engagement grooves and engagement holes. Has been. And when attaching a measurement unit, it positions by engaging engagement parts, such as a pin formed in the measurement unit side, with a to-be-engaged part of a bracket structure. It was supposed to be fixed to the exposure apparatus.

  In this way, the measurement unit must be positioned and fastened to the bracket structure on the exposure apparatus side during measurement, and after measurement, it is necessary to remove by the reverse procedure described above. The removal work required time and effort.

  Furthermore, there is a problem that the atmosphere in the chamber cannot be kept constant because it is necessary to insert and remove the measurement unit from the opening / closing door of the chamber that houses the exposure apparatus main body every time it is attached and detached.

  The present invention has been made paying attention to such problems existing in the prior art. The purpose is to provide an optical characteristic measuring apparatus and an optical characteristic measuring method capable of efficiently measuring an optical system without deteriorating the motion performance of the moving stage in a normal state and without complicated manual work. It is in. Another object of the present invention is to provide an exposure apparatus capable of improving exposure accuracy. A further object of the present invention is to provide a device manufacturing method capable of producing a highly integrated device with a high yield.

  In order to achieve the above object, an optical property measuring apparatus according to claim 1 is detachably disposed on a moving stage, and includes a measuring unit including a light receiving unit that measures an optical property of an optical system, and the moving stage with respect to the moving unit. An attachment / detachment mechanism for attaching / detaching the measurement unit, and a control device for controlling the attachment / detachment mechanism and attaching / detaching the moving stage and the measurement unit are characterized.

  Therefore, according to the first aspect of the present invention, the attaching / detaching operation by the attaching / detaching mechanism for attaching the measurement unit to the moving stage is automatically controlled by the control device. Thereby, the attachment and detachment operation of the measurement unit can be automatically performed by remote operation regardless of the manual operation, and the optical characteristics can be efficiently measured by this measurement unit.

  According to a second aspect of the present invention, in the optical characteristic measuring apparatus according to the first aspect, the optical system is a projection optical system that projects a pattern formed on a mask onto a substrate, and the movable stage The substrate stage is a holding stage.

  Therefore, according to the second aspect of the present invention, in the projection optical system having particularly severe optical conditions, the measurement unit attached to the substrate stage can accurately form the mask without impairing the motion performance of the substrate stage. There is an effect that the formed pattern can be projected onto the substrate.

  According to a third aspect of the present invention, in the optical characteristic measuring apparatus according to the first or second aspect, the measurement unit has a function of measuring a polarization state of light that has passed through the optical system, and a function for measuring the light that has passed through the optical system. At least one of a function for measuring information, a function for measuring an aerial image formed by the optical system, and a function for measuring the numerical aperture of the optical system is provided.

  Therefore, the function of measuring the polarization state of the light that has passed through the optical system, the function of measuring the information of the light that has passed through the optical system, the function of measuring the aerial image formed by the optical system, and the numerical aperture of the optical system By disposing an optical property measuring device having at least one of the functions on the moving stage, there is an effect that various optical properties related to each function can be automatically measured without manual intervention.

  According to a fourth aspect of the present invention, in the optical characteristic measuring apparatus according to any one of the first to third aspects, the measurement unit is configured to be the at least one of an air adsorption method, an electromagnet adsorption method, and a screw fastening method. It is characterized by being attached to a moving stage.

  Therefore, according to the fourth aspect of the present invention, the measurement unit can be automatically and stably fixed to the moving stage by at least one of an air adsorption method, an electromagnet adsorption method, and a screw fastening method. There is an effect.

  According to a fifth aspect of the present invention, in the optical characteristic measuring device according to any one of the first to fourth aspects, the attachment / detachment mechanism is retracted away from a measurement position that is a position for measuring the optical characteristic of the optical system. The measurement unit is attached and detached at a position.

  Therefore, according to the fifth aspect of the present invention, the measuring unit is attached to and detached from the moving stage at the retracted position away from the measuring position by the attaching / detaching mechanism. Therefore, there is an effect that the measurement unit standing by at the retracted position can be mounted on wafer stage WST at the retracted position, for example, during normal exposure other than the measurement. In addition, various control devices, cables, auxiliary machines, etc. for controlling wafer stage WST are usually arranged at the measurement position, and there are cases where sufficient space for attaching / detaching the measurement unit is not secured. When the measurement unit is attached or detached in such a narrow place, there is a possibility that the measurement unit comes into contact with those auxiliary machines. In that respect, according to the configuration of the present invention, there is an effect that the measurement unit can be stably attached and detached at a position away from the measurement position.

  According to a sixth aspect of the present invention, in the optical characteristic measuring apparatus according to the fifth aspect, the control device moves the moving stage to the retracted position based on retracted position data indicating the retracted position of the measurement unit. It is characterized by making it.

  Therefore, according to the sixth aspect of the invention, there is an effect that the moving stage can be moved to the retracted position by the control device based on the retracted position data stored in advance.

  The invention according to claim 7 is the optical characteristic measurement apparatus according to claim 5 or 6, further comprising a detection mechanism that detects an approach or contact between the moving stage and the measurement unit, and the control device is configured to detect the detection. Based on the signal detected by the mechanism, the attachment / detachment mechanism is caused to start attachment of the measurement unit to the moving stage at the retracted position.

  Therefore, according to the seventh aspect of the invention, there is an effect that the mounting operation of the measurement unit to the moving stage can be started at the timing when the moving stage and the measuring unit in the retracted position are close to each other.

  The invention according to claim 8 is the optical characteristic measurement apparatus according to any one of claims 1 to 7, further comprising a center-of-gravity adjustment mechanism that makes the center of gravity of the movable stage constant before and after the measurement unit is attached and detached. It is characterized by that.

  Therefore, according to the eighth aspect of the invention, since the center of gravity of the moving stage can be made constant before and after the measurement unit is attached / detached, the weight balance of the moving stage is maintained, its motion performance is stabilized, and the optical characteristics are accurately measured. There is an effect that it can be measured well.

  According to a ninth aspect of the present invention, in the optical characteristic measuring apparatus according to the eighth aspect, the center-of-gravity adjusting mechanism is moved by the weight of the measuring unit when the measuring unit is attached or removed. A compensation member that compensates for a change in the center of gravity of the stage is included.

  Therefore, according to the ninth aspect of the invention, when the measuring unit is attached to and detached from the moving stage, there is an effect that a change in the center of gravity position of the moving stage that occurs in the weight of the measuring unit is suppressed by the compensation member. .

  The invention according to claim 10 is the optical characteristic measuring apparatus according to any one of claims 1 to 9, wherein the optical system is a projection optical system that projects a pattern formed on a mask onto a substrate. The moving stage is a substrate stage for holding the substrate, and the substrate stage is provided with an attachment portion to which the measurement unit is attached. At the time of measurement, the measurement unit is attached to the attachment portion. An optical characteristic of the projection optical system is measured via a liquid between the optical element on the substrate side and the light receiving part of the measurement unit, and when not measured, a complementary member having a shape corresponding to the shape of the mounting part is provided. It arrange | positions to the said attaching part, It is characterized by the above-mentioned.

  Therefore, according to the invention described in claim 10, it is possible to measure the optical characteristics of the projection optical system in a state where the liquid is interposed between the optical element on the substrate side of the projection optical system and the light receiving unit of the measurement unit. There is an effect that can be done. Further, since the complementary member is disposed on the substrate stage during the exposure operation by the liquid immersion method, it is possible to prevent the liquid supplied onto the substrate during the exposure from entering the mounting portion. is there.

According to an eleventh aspect of the present invention, in the optical characteristic measuring apparatus according to the tenth aspect, the attachment portion is formed in an attachment recess provided in the substrate stage.
Therefore, according to the eleventh aspect of the invention, the attachment portion to which the measurement unit is attached is formed as an attachment recess in the substrate stage. For this reason, the measurement unit can be arranged on the mounting portion without protruding as much as possible from the substrate stage, and the effect that the measurement unit can be prevented from interfering with various auxiliary machines and cables arranged around the moving stage is obtained. is there.

  According to a twelfth aspect of the present invention, there is provided the optical property measuring apparatus according to the tenth or eleventh aspect, wherein the liquid liquid is disposed in a gap between the attachment portion and the measurement unit or a gap between the attachment portion and the complementary member. A seal portion for preventing leakage is formed.

  Therefore, according to the twelfth aspect of the present invention, the seal portion does not cause a gap between the attachment portion and the measurement unit or the attachment portion and the complementary member. There is an effect that liquid leakage to the part can be prevented.

An optical property measurement method according to a thirteenth aspect is characterized in that the optical property of the optical system is measured using the optical property measurement apparatus according to any one of the first to twelfth aspects.
Therefore, according to the thirteenth aspect of the present invention, there is an effect that the optical characteristics can be measured accurately and efficiently without impairing the performance of the moving stage without depending on the human hand.

  According to a fourteenth aspect of the present invention, there is provided an exposure apparatus that exposes a pattern image formed on a mask on a reticle stage onto a substrate on a wafer stage via a projection optical system. The optical characteristic measuring device according to the item is provided.

Therefore, according to the fourteenth aspect of the invention, there is an effect that the exposure apparatus can perform highly accurate exposure based on accurate measurement.
A device manufacturing method according to a fifteenth aspect is characterized in that, in the device manufacturing method including a lithography process, exposure is performed using the exposure apparatus according to the fourteenth aspect in the lithography process.

  Therefore, according to the invention described in claim 15, it is possible to perform exposure with high accuracy based on accurate measurement and to produce a high-quality device.

  According to the present invention, by automatically attaching and detaching the measurement unit to / from the moving stage, it is possible to efficiently perform the optical system without deteriorating the motion performance of the moving stage at the normal time and without complicated manual work. Measurement can be made possible.

  Hereinafter, an embodiment in which the present invention is embodied as an optical characteristic measuring apparatus for measuring wavefront aberration in a scanning exposure type exposure apparatus capable of performing scanning exposure for manufacturing semiconductor elements will be described with reference to FIGS. .

  FIG. 1 is a schematic block diagram of an exposure apparatus 1 according to this embodiment. Hereinafter, the configuration of the exposure apparatus 1 will be described with reference to FIG. In each drawing described below, the direction along the optical axis of the projection optical system PL described later is the Z direction, the direction orthogonal to the optical axis of the projection optical system PL and the paper surface is the X direction (step direction), and the projection optical system. A direction perpendicular to the optical axis of PL and along the paper surface is defined as a Y direction (scanning direction).

  The exposure apparatus 1 includes an exposure apparatus main body 4, various control systems (for example, a main control system 41) that control the exposure apparatus main body 4, and the optical characteristic measurement apparatus 2. The exposure apparatus main body 4 includes an illumination optical system 17, a reticle stage RST, a projection optical system PL, and a wafer stage WST. The optical characteristic measuring apparatus 2 includes a wavefront aberration measuring unit 35 as a measuring unit and an attaching / detaching mechanism 3 for attaching / detaching the wavefront aberration measuring unit 35 to / from the wafer stage WST.

  The moving stage according to the present invention includes not only wafer stage WST but also reticle stage RST depending on the target optical system and optical characteristics. In this embodiment, the moving stage measures the wavefront aberration of projection optical system PL. The wafer stage WST will be described as a moving stage.

(Exposure main unit)
Hereafter, each member which comprises the exposure apparatus main body 4 is demonstrated in order.
First, the illumination optical system 17 of the exposure apparatus 1 will be described. The exposure light source 11 emits pulsed light such as, for example, KrF excimer laser light, ArF excimer laser light, and F ₂ laser light as the exposure light EL. As an optical integrator, the exposure light EL enters, for example, a fly-eye lens 12 composed of a large number of lens elements, and a large number of secondary light source images corresponding to the respective lens elements are formed on the exit surface of the fly-eye lens 12. The Note that the optical integrator may be a rod lens. The exposure light EL emitted from the fly-eye lens 12 has a circuit pattern such as a semiconductor element drawn through the relay lenses 13a and 13b, the reticle blind 14, the mirror 15, and the condenser lens 16, and is placed on the reticle stage RST. It enters the reticle R as a mask.

  Here, the synthesis system of the fly-eye lens 12, the relay lenses 13a and 13b, the mirror 15, and the condenser lens 16 superimposes the secondary light source image on the reticle R, and illuminates the reticle R with uniform illuminance. An illumination optical system 17 is configured. The reticle blind 14 is arranged such that its light shielding surface has a conjugate relationship with the pattern area of the reticle R. The reticle blind 14 includes a plurality of movable light-shielding portions (for example, two L-shaped movable light-shielding portions) that can be opened and closed by a reticle blind drive unit 14a. And the illumination area which illuminates reticle R is arbitrarily set by adjusting the magnitude | size (slit width etc.) of the opening part formed by those movable light-shielding parts.

  Next, reticle stage RST will be described. The reticle stage RST is arranged on a surface plate (not shown) of the exposure apparatus 1 and holds the reticle R in a plane perpendicular to the optical axis AX of the exposure light EL so that it can be finely moved in a two-dimensional direction. The reticle stage RST can be moved in a predetermined direction (scanning direction (Y direction)) by a reticle stage driving unit 19 constituted by a linear motor or the like. Reticle stage RST has a moving stroke that allows the entire surface of reticle R to cross at least optical axis AX of exposure light EL.

  A Y-axis interferometer 20 that measures the distance in the Y-axis direction and an X-axis interferometer (not shown) that measures the distance in the X-axis direction are arranged on the surface plate that supports the moving reticle stage RST. A Y-axis moving mirror 21 that reflects the laser beam from the Y-axis interferometer 20 and an X-axis moving mirror (not shown) that reflects the laser beam from the X-axis interferometer are fixed to the end of the reticle stage RST. ing. The Y-axis interferometer 20 always detects the position of the reticle stage RST in the scanning direction, and the X-axis interferometer always detects the position of the reticle stage RST in the direction orthogonal to the scanning direction. It is sent to reticle stage control unit 22 (RST control unit). The reticle stage control unit 22 controls the reticle stage driving unit 19 based on the position information of the reticle stage RST, and moves the reticle stage RST.

  Next, the projection optical system PL will be described. The exposure light EL that has passed through the reticle R is incident on, for example, a bilateral telecentric projection optical system PL. The projection optical system PL is a substrate in which a projection image obtained by reducing the circuit pattern on the reticle R to, for example, 1/5 or 1/4 is coated on the surface with a photoresist having photosensitivity to the exposure light EL. Formed on the wafer W.

  Subsequently, wafer stage WST will be described. Wafer W is sucked and held on wafer stage WST via wafer table 25 equipped with a vacuum device. It is possible to hold a glass substrate or the like as well as the silicon wafer. The wafer table 25 can be tilted in an arbitrary direction with respect to the optimal imaging plane of the projection optical system PL by a drive unit (not shown), and the projection optical system PL is moved in the optical axis AX direction (Z direction). Rotation around (Z axis) is possible. Wafer stage WST is perpendicular to the scanning direction so that it can be moved not only in the scanning direction (Y direction) but also in a plurality of shot areas partitioned on the wafer by wafer stage driving unit 26 such as a motor. It is configured to be movable also in the direction (X direction).

  An interferometer 27 including an X-axis interferometer that measures a distance in the X-direction and a Y-axis interferometer that measures a distance in the Y-axis direction is disposed on the surface plate outside the moving wafer stage WST. Further, a moving mirror 28 composed of an X-axis moving mirror and a Y-axis moving mirror that respectively reflect the laser beams from these interferometers is fixed to the end of wafer stage WST that moves. The position of wafer stage WST in the X direction and the Y direction is always detected by interferometer 27. Position information (or speed information) of wafer stage WST is sent to wafer stage control unit 29 (WST control unit), and wafer stage control unit 29 controls wafer stage drive unit 26 based on this position information (or speed information). To do.

  Furthermore, an attachment recess 34 for attaching a wavefront aberration measuring unit 35 described later is formed on wafer stage WST. Further, an proximity sensor 43 for detecting the approach to the wavefront aberration measuring unit 35 is attached in the vicinity of the mounting recess 34. The proximity sensor 43 detects that the wavefront aberration measuring unit 35 has approached the wafer stage WST by a predetermined distance. Instead, the proximity sensor 43 detects contact with the wafer stage WST. It may be configured. Detection sensors such as the proximity sensor 43 and the contact sensor may be provided at a plurality of locations on wafer stage WST, or may be provided on the wavefront aberration measurement unit 35 side. Moreover, these sensors are comprised by an ultrasonic sensor, an infrared sensor, etc., for example. In addition, instead of the sensor, the approach to the wavefront aberration measuring unit 35 at the retracted position may be detected based on the position information of the wafer stage WST obtained from the interferometer 27 of the wafer stage WST.

It should be noted that some optical members constituting the illumination optical system 17, the reticle stage RST, the projection optical system PL, and the wafer stage WST are housed in a chamber (not shown).
On the wafer stage WST, only a measurement unit having a relatively small mass is generally mounted, and a cable control device (a cable control device for the wavefront aberration measurement unit 35, not shown) having a relatively large mass is used. Do not place. As will be described in detail below, the wavefront aberration measurement unit 35 is stored in the storage unit 23 as a retracted position except during measurement, and moves to the measurement position only during measurement. During this movement, the cable is a mechanism that automatically extends from the retracted position to the measuring position. The reason for this configuration is to keep the load on wafer stage WST to a minimum and not to reduce the motion performance.

(Wavefront aberration measuring unit 35)
Next, the wavefront aberration measuring unit 35 for detecting the wavefront aberration of the projection optical system PL will be described as the optical characteristic measuring device 2.

  First, the arrangement of the wafer stage WST will be described. The wavefront aberration measuring unit 35 is arranged so that the height of the light receiving surface 36 substantially coincides with the height of the surface of the wafer W. For this reason, the wavefront aberration can be accurately measured under substantially the same conditions as the surface of the wafer W during the measurement operation. If the wavefront aberration measurement unit 35 is removed when the measurement is finished and the exposure operation is started, as described above, the cable used for the wiring does not remain on the wafer stage WST, and the inertia mass is reduced. It comes to plan. Further, the attaching / detaching operation of the wavefront aberration measuring unit 35 to / from the wafer stage WST is automatically controlled by the attaching / detaching mechanism 3 provided in the optical property measuring apparatus 2 and each control device (main control system 41, wafer stage control unit 29, etc.). . Detailed operation of this automatic control will be described later.

Next, the internal configuration of the wavefront aberration measurement unit 35 will be described.
As shown in FIG. 2, a collimator lens 37, a microlens array 38, and a CCD 39 that is an image sensor are provided inside the wavefront aberration measurement unit 35. The collimator lens 37 converts a light beam incident from the light receiving surface 36 into the wavefront aberration measuring unit 35 into parallel light PB. The microlens array 38 has microlenses arranged two-dimensionally, divides the parallel light PB into a plurality of light beams, and collects the divided light beams for each lens. The CCD 39 has a sufficient area to receive the light flux through the collimator lens 37 and the microlens array 38, and detects the position (image forming position) of the condensing point for each lens. Then, the CCD 39 outputs a signal relating to the position of each received condensing point to the wavefront aberration detector 40 (see FIG. 1).

  This wavefront aberration detector 40 calculates the wavefront aberration of the projection optical system PL based on the input position information of each condensing point, and controls the operation of the entire exposure apparatus using the information on the calculated wavefront aberration. Output to the control system 41.

(About automatic desorption operation of the wavefront aberration measurement unit 35)
In the optical characteristic measuring apparatus 2 (wavefront aberration measuring unit 35) configured as described above, the wavefront aberration measuring unit 35 can be attached to and detached from the mounting recess 34 of the wafer stage WST by the attaching / detaching mechanism 3 as described above. .

Hereinafter, the attaching / detaching operation (wavefront aberration measuring method) will be described in detail.
FIG. 3 is a schematic plan view for explaining the attaching / detaching (attaching) operation of the wavefront aberration measuring unit 35 to the wafer stage WST.

  The wavefront aberration measuring unit 35 is mounted on the wafer stage WST during measurement. However, in order to reduce the inertial mass generated in the wafer stage WST and improve the motion performance of the wafer stage WST, the exposure apparatus main body 4 is housed except during measurement. Is stored in a retracted position that does not impair the motion characteristics of wafer stage WST (FIG. 3A).

  At the time of wavefront aberration measurement, wafer stage WST is moved to the retracted position (FIGS. 3B to 3D), and wavefront aberration measuring unit 35 is mounted on wafer stage WST at the retracted position (FIG. 3). (D)). Thereafter, the wafer stage WST on which the wavefront aberration measuring unit 35 is mounted is moved to a position where the light receiving surface 36 of the wavefront aberration measuring unit 35 is at the measurement position (FIG. 3E), so that the wavefront aberration is measured. It has become.

The operation of wafer stage WST will be described in more detail.
First, FIG. 3A shows the position of wafer stage WST during the exposure operation. During this exposure operation, as described above, the wavefront aberration measuring unit 35 is stored in the storage unit 23 formed at the retracted position that does not impair the motion characteristics of the wafer stage WST. The storage unit 23 is formed, for example, as a storage recess formed on a guide for the wafer stage WST (a part of the wafer stage WST that is not movable unlike the wafer table 25). It can be configured in various forms such as a storage stand provided separately from wafer stage WST. The retracted position including the storage unit 23 is located away from a measurement position described later, and is located at the lower right of the wafer table 25 in FIG.

  When wavefront aberration measurement is started from the state of the exposure operation shown in FIG. 3A, wafer stage WST reaches the retracted position where wavefront aberration measurement unit 35 is stored, as shown in FIG. 3B. Start moving. This movement is controlled by the main control system 41. Specifically, position information (or speed information) of wafer stage WST is sent to main control system 41 via wafer stage control unit 29, and main control system 41 performs wafer stage based on this position information (or speed information). Drive control of wafer stage WST is performed via control unit 29 and wafer stage drive unit 26. At this time, the main control system 41 stores data relating to the retreat position in the XY coordinates (retreat position data), and the wafer stage WST is moved from the exposure operation position to the retreat position based on this retreat position data.

  The position shown in FIG. 3C is the wafer W replacement position, and the wafer loader 42 indicated by a two-dot chain line indicates the position at the time of wafer replacement. Here, the wafer W that has been subjected to the exposure process and the unprocessed wafer W that will be subjected to the exposure process are exchanged. In the present embodiment, wafer stage WST passes through this wafer exchange position and moves to the retracted position. The retreat position is set near the wafer exchange position. When wafer stage WST reaches the retracted position and approach sensor 43 provided on wafer stage WST detects wavefront aberration measuring unit 35 in the retracted position, the detection signal is sent to main control system 41, and main control system 41. Based on this detection signal, the attachment / detachment mechanism 3 starts attachment of the wavefront aberration measurement unit 35 to the wafer stage WST.

  The wavefront aberration measuring unit 35 is first positioned with respect to the mounting recess 34 of wafer stage WST. The positioning can be performed, for example, by engaging a pin fixed on the wavefront aberration measurement unit 35 side with a hole formed on the wafer stage WST side. At this time, it is possible to provide a kinematic support in order to accurately position at one place and avoid excessive movement restraint of the wavefront aberration measuring unit 35. According to the kinematic support, the wavefront aberration measuring unit 35 is not pressed with an excessive force (that is, excessively constrained), and the wavefront aberration measuring unit 35 is positioned with high accuracy as in the case where the wavefront aberration measuring unit 35 is permanently installed. Can be realized. As a fixing method, the wavefront aberration measuring unit 35 is fixed to the mounting recess 34 of the wafer stage WST by an air adsorption method, an electromagnet adsorption method, a screw fastening method, a fitting method, or the like.

  When the attachment of the wavefront aberration measuring unit 35 to the wafer stage WST is completed, the wafer stage WST then moves to the measurement position along the path opposite to that shown in FIGS. 3 (e)). At this measurement position, the light receiving surface 36 of the wavefront aberration measurement unit 35 is located at the extension of the optical axis AX of the projection optical system PL, and corresponds to the projection area of the projection optical system PL.

  At this time, as shown in FIG. 1, a pinhole PH having a predetermined diameter as a pinhole pattern is arranged in the optical path of the exposure light. In this state, the exposure light from the exposure light source 11 is exposure light for measurement. Measurement light RL is emitted. This measurement light irradiates the pinhole PH via the relay lenses 13a and 13b, the mirror 33, and the condenser lens 16. By passing through the pinhole PH, the measurement light RL is converted into light having a spherical wave SW. The light having the spherical wave SW is incident on the projection optical system PL, and when the aberration remains in the projection optical system PL, the wavefront WF of the spherical wave SW is distorted.

  As shown in FIG. 2, the light having the spherical wave SW emitted from the projection optical system PL reaches the light receiving surface 36 of the wavefront aberration measurement unit 35 and enters the wavefront aberration measurement unit 35. The light having the spherical wave SW incident inside the wavefront aberration measuring unit 35 is converted into parallel light PB by the collimator lens 37. Here, when there is no aberration in the projection optical system PL, the wavefront WF of the parallel light PB is a plane. On the other hand, when the projection optical system PL has an aberration, the wavefront WF of the parallel light PB is a distorted surface. The parallel light PB is divided into a plurality of light beams by the microlens array 38 and condensed on the CCD 39.

  Here, when there is no aberration in the projection optical system PL, since the wavefront of the parallel light PB is a plane, the parallel light PB is incident along the optical axis of each lens. Exists on the optical axis of each lens. On the other hand, when the projection optical system PL has an aberration, the wavefront of the parallel light PB becomes a distorted surface. Therefore, the parallel light PB incident on each lens has a different wavefront inclination for each lens. Have In connection with this, the condensing spot for each lens exists on the perpendicular to the inclination of the wavefront, and shifts laterally with respect to the condensing spot when there is no aberration. The position of each laterally condensed light spot is detected by the CCD 39.

  Next, in the wavefront aberration detection unit 40 shown in FIG. 1, the position of the condensing spot when there is no aberration in the projection optical system given in design, and the CCD 39 condensed through the projection optical system PL. The lateral deviation amount is obtained by comparing with the focused spot position, and the wavefront aberration in the projection optical system PL is measured. In this case, the light receiving surface 36 of the wavefront aberration measuring unit 35 held on the wafer stage WST is arranged so as to be on the same plane as the wafer W. Similar wavefront aberration can be measured.

  As described above, after measuring the wavefront aberration, wafer stage WST on which wavefront aberration measurement unit 35 is mounted moves again from the measurement position (FIG. 3E) to the retracted position (FIG. 3D). . At this retracted position, wavefront aberration measurement unit 35 is removed from mounting recess 34 of wafer stage WST.

According to the above embodiment, the following effects can be obtained.
(1) In the above embodiment, the attachment / detachment mechanism 3 for attaching / detaching the wavefront aberration measuring unit 35 to / from the wafer stage WST is automatically controlled by the main control system 41 (wafer stage control unit 29). Since the wavefront aberration measurement unit 35 is attached to the attachment recess 34 of the wafer stage WST only by the attachment / detachment mechanism 3 only during measurement, the inertial mass is reduced and the motion performance of the wafer stage WST is not impaired.

  (2) Since a series of attaching / detaching operations of attaching the wavefront aberration measuring unit 35 to the wafer stage WST at the time of wavefront aberration measurement and removing it from the wafer stage WST at times other than the measurement are automated by remote operation, it is troublesome to attach manually. -There is no need to perform the removal work, and the removal work can be performed efficiently and quickly.

  (3) Normally, the wavefront aberration measurement unit 35 generates Joule heat from its main body or a power cable for operating the wavefront aberration measurement unit 35 and raises the temperature of the wafer stage WST. The temperature management of wafer stage WST is important for high-precision positioning of wafer stage WST, and for manufacturing high-precision semiconductor elements. In that respect, in the above embodiment, when the wavefront aberration measurement is completed, the wavefront aberration measurement unit 35 is automatically removed from the wafer stage WST and the heat source itself is removed, so that the temperature of the wafer stage WST is quickly returned to the original set temperature. Can be returned.

  (4) In the above embodiment, the wavefront aberration measurement unit 35 other than at the time of measurement is stored in a retracted position in the chamber that houses the exposure apparatus main body 4 and away from the measurement position. Therefore, the wavefront aberration measurement unit 35 stands by at this retracted position, for example, during normal exposure other than during measurement, and can be quickly mounted on the wafer stage WST during measurement.

  (5) Further, since the retracted position is in the chamber, it is necessary to open and close the chamber door (not shown) and insert and remove the wavefront aberration measuring unit 35 in order to attach and detach the wavefront aberration measuring unit 35. Therefore, the problem that the atmosphere in the chamber is damaged can be avoided.

  (6) In the above embodiment, the wavefront aberration measurement unit 35 is transported between the retracted position and the measurement position by using the movement function of the wafer stage WST in the XY directions. In other words, wafer stage WST has a function of picking up wavefront aberration measurement unit 35 and bringing it to the measurement position during measurement. With such a configuration, the operation of transporting the wavefront aberration measuring unit 35 at the retracted position can be easily realized by the wafer stage WST provided in the exposure apparatus. For example, it is clear that the device configuration is easier than a case where a separate device such as a robot arm is provided in the chamber.

  (7) In the above embodiment, the proximity sensor 43 for detecting the approach to the wavefront aberration measurement unit 35 is attached in the vicinity of the mounting recess 34 of the wafer stage WST. The main control system 41 causes the attachment / detachment mechanism 3 to start the attachment operation of the wavefront aberration measurement unit 35 based on the signal detected by the proximity sensor 43 by the wavefront aberration measurement unit 35. Therefore, the operation of attaching the wavefront aberration measurement unit 35 to the wafer stage WST can be started at the timing when the moving wafer stage WST approaches the wavefront aberration measurement unit 35 in the retracted position.

  (8) In the above embodiment, the retracted position for attaching / detaching the wavefront aberration measuring unit 35 to / from wafer stage WST is set in the vicinity of the wafer replacement position, and passes from the exposure position to the retracted position through the wafer replacement position. It is supposed to move. Therefore, when measuring wavefront aberration, if wafer stage WST is moved in accordance with the replacement timing of wafer W, wafer stage WST is retracted only by moving a small distance from the wafer replacement position to the retracted position. It can be taken to the position (attachment position).

(Second Embodiment)
Next, a second embodiment of the present invention will be described with reference to FIGS.
The present invention can also be applied to an immersion exposure apparatus that performs exposure through a liquid between the optical element on the most substrate (wafer W) side of the projection optical system and the surface of the wafer W. The present embodiment is different from the first embodiment in that the present invention is embodied in this immersion exposure apparatus. Hereinafter, description will be made focusing on differences from the first embodiment.

  FIG. 4 is a schematic block diagram of the exposure apparatus of the present embodiment, particularly showing the vicinity of wafer stage WST. As shown in FIG. 4, the exposure apparatus 50 includes a liquid supply device 54 that supplies a predetermined liquid 53 between the surface of the wafer W and the optical element 52 on the wafer side of the projection optical system PL, and the liquid 53. And a liquid recovery device 55 for recovering from the wafer W. For example, pure water is used as the liquid 53. The liquid supply device 54 includes a tank that stores the liquid 53, a pressure pump, a temperature control device, and the like (all not shown), and the temperature of the liquid is controlled on the wafer W via a predetermined outflow nozzle 56. 53 is supplied. On the other hand, the liquid recovery device 55 includes a storage tank for the liquid 53, a suction pump, and the like (both not shown), and recovers the liquid 53 on the wafer W via a predetermined inflow nozzle 57. Yes. In this exposure apparatus 50, at least while the pattern image of the reticle R is transferred onto the wafer W, the liquid 53 is filled between the surface of the wafer W and the optical element 52 on the wafer side of the projection optical system PL. become.

  Here, the mounting recess 34 formed in the wafer stage WST, the wavefront aberration measurement unit 35, the attaching / detaching mechanism 3, the main control system 41 (not shown), and other other configurations are substantially the same as those in the first embodiment. However, as shown in FIG. 5, in the present embodiment, a planar member 59 in which an opening having substantially the same size as the outer shape of wafer W is provided on the upper surface of wafer stage WST. By providing the planar member 59 on the wafer stage WST, the same surface as the surface of the wafer W can be formed, and the exposure by the immersion method is maintained even when the area around the edge of the wafer W is exposed. can do. Note that the gap between the planar member 59 and the wafer W is desirably set to such an extent that liquid leakage does not occur due to the surface tension of the liquid.

  Further, in the present embodiment, the first embodiment described above in that the seal member 58 is provided between the side surface (mounting portion) of the flat member 59 and the wavefront aberration measurement unit 35 and the dummy member 61 is provided. Is different. The seal member 58 is not essential. That is, as described above, if the gap between the planar member 59 and the wavefront aberration measuring unit 35 or the dummy member 61 is set to such an extent that liquid leakage does not occur due to the surface tension of the liquid, the sealing member It is also possible to omit 58.

  FIG. 5 is a diagram for explaining the operation of removing the wavefront aberration measurement unit 35 from the wafer stage WST and attaching the dummy member 61 to the wafer stage WST at the retracted position described in the first embodiment. As shown in FIG. 5, the dummy member 61 is disposed in the attachment recess 34 when the wavefront aberration measurement unit 35 is not attached to the attachment recess 34. The dummy member 61 has the same shape as that of the wavefront aberration measuring unit 35, that is, a shape corresponding to the shape of the mounting recess 34, and is made of a lightweight and high strength metal such as titanium. In terms of the motion performance of wafer stage WST, it is desirable to avoid excessive weight applied to wafer stage WST as much as possible to reduce the inertial mass. However, by forming dummy member 61 of titanium or the like, wavefront aberration measurement unit 35 is formed. Compared to the above, the weight is sufficiently reduced, and it can be carried out without problems to the extent that the motion performance of wafer stage WST is not impaired.

  On the other hand, the seal member 58 is made of a material having flexibility (elasticity) and water resistance, such as rubber, and is in close contact with the side surface of the wavefront aberration measuring unit 35 or the dummy member 61 attached to the attachment recess 34, so that the attachment recess 34. The wavefront aberration measuring unit 35 or the mounting recess 34 and the dummy member 61 are sealed so as not to generate a gap.

The wavefront aberration measurement method (the operation method of the attachment / detachment mechanism 3) is also substantially the same as that of the first embodiment, and therefore detailed description thereof will be omitted, and only differences will be described.
In the optical characteristic measuring apparatus 51 of this embodiment, when the wavefront aberration measuring unit 35 is not attached to the attachment recess 34, the main control system 41 controls the dummy member 61 so that it is disposed instead. FIG. 5 shows a state in which the wafer stage WST is moved to the retracted position of the wavefront aberration measuring unit 35, that is, after the wavefront aberration measurement is finished, the wavefront aberration measuring unit 35 is removed from the wafer stage WST in the first embodiment. This corresponds to FIG.

  In the present embodiment, when the wavefront aberration measuring unit 35 is detached from the wafer stage WST and stored in the storage unit 23, the mounting operation of the dummy member 61 is subsequently started. Here, the wavefront aberration measuring unit 35 and the dummy member 61 are exchanged, and the dummy member 61 is fixed to the mounting recess 34 of the wafer stage WST by the same positioning and fixing method as the wavefront aberration measuring unit 35.

The removal of the dummy member 61 and the replacement from the dummy member 61 to the wavefront aberration measurement unit 35 are performed in the same manner by the reverse operation.
According to the said embodiment, in addition to the effect of (1)-(8) in 1st Embodiment, the following effects can be acquired further.

  (9) In the above embodiment, the dummy member 61 is arranged in the mounting recess 34 of the wafer stage WST during the exposure operation by the liquid immersion method, so that the liquid 53 supplied onto the wafer W during the exposure is attached to the mounting recess. 34 can be prevented from entering. In this way, the dummy member 61 has a function of preventing liquid leakage to the mounting recess 34.

Next, an embodiment of a device manufacturing method using the exposure apparatuses 1 and 50 of the above embodiment in a lithography process will be described.
FIG. 7 is a flowchart showing a manufacturing example of a device (a semiconductor element such as an IC or LSI, a liquid crystal display element, an imaging element (CCD or the like), a thin film magnetic head, a micromachine, or the like). As shown in FIG. 7, first, in step S101 (design step), a function / performance design (for example, circuit design of a semiconductor device) of a device (microdevice) is performed, and a pattern design for realizing the function is performed. Do. Subsequently, in step S102 (mask manufacturing step), a mask (such as a reticle Rt) on which the designed circuit pattern is formed is manufactured. On the other hand, in step S103 (substrate manufacturing step), a substrate (or a wafer W when a silicon material is used) is manufactured using a material such as silicon or a glass plate.

  Next, in step S104 (substrate processing step), using the mask and substrate prepared in steps S101 to S103, an actual circuit or the like is formed on the substrate by lithography or the like, as will be described later. Next, in step S105 (device assembly step), device assembly is performed using the substrate processed in step S104. Step S105 includes processes such as a dicing process, a bonding process, and a packaging process (chip encapsulation or the like) as necessary.

  Finally, in step S106 (inspection step), inspections such as an operation confirmation test and a durability test of the device manufactured in step S105 are performed. After these steps, the device is completed and shipped.

  FIG. 8 is a diagram showing an example of a detailed flow of step S104 of FIG. 7 in the case of a semiconductor device. In FIG. 8, in step S111 (oxidation step), the surface of the wafer W is oxidized. In step S112 (CVD step), an insulating film is formed on the surface of the wafer W. In step S113 (electrode formation step), an electrode is formed on the wafer W by vapor deposition. In step S114 (ion implantation step), ions are implanted into the wafer W. Each of the above steps S111 to S114 constitutes a pretreatment process at each stage of the wafer processing, and is selected and executed according to a necessary process at each stage.

  At each stage of the wafer process, when the above pre-process is completed, the post-process is executed as follows. In this post-processing process, first, a photosensitive agent is applied to the wafer W in step S115 (resist formation step). Subsequently, in step S116 (exposure step), the circuit pattern of the mask (reticle Rt) is transferred onto the wafer W by the lithography system (exposure apparatus 31) described above. Next, in step S117 (developing step), the exposed wafer W is developed, and in step S118 (etching step), the exposed members other than the portion where the resist remains are removed by etching. In step S119 (resist removal step), the resist that has become unnecessary after the etching is removed.

Multiple circuit patterns are formed on the wafer W by repeatedly performing these pre-processing and post-processing steps.
If the device manufacturing method of this embodiment described above is used, the exposure apparatus 1 including the optical property measuring apparatus described in each of the above embodiments is used in the exposure step (step S116). Therefore, by measuring the optical characteristics with high accuracy, it is possible to further improve the resolving power by increasing the adjustment accuracy of the illumination optical system 17 and the projection optical system PL, and to perform exposure amount control with high accuracy. be able to. Therefore, as a result, a highly integrated device having a narrow minimum line width can be produced with a high yield.

In addition, you may change each said embodiment as follows.
In addition to the above-described embodiments, it may be configured to further include a center-of-gravity adjustment mechanism that keeps the center of gravity of wafer stage WST constant before and after the wavefront aberration measurement unit 35 is attached and detached. For example, as shown in FIG. 6, the center-of-gravity adjustment mechanism 62 can be configured by providing a compensation member 63 having the same mass as the wavefront aberration measurement unit 35 on the wafer stage WST at a position symmetrical to the wavefront aberration measurement unit 35. The compensation member 63 is attached at the same time when the wavefront aberration measurement unit 35 is attached to the attachment recess 34, and is removed when the wavefront aberration measurement unit 35 is removed, so that the center of gravity G of the wafer stage WST is made constant. Can do.

  The mass of the compensation member 63 is not necessarily the same as that of the wavefront aberration measurement unit 35. In this case, for example, if the compensation member is configured so as to generate a moment that is opposite to and equal to the moment generated at the center of gravity G by the attachment (or removal) of the wavefront aberration measurement unit 35, the same effect as described above. Can be played.

  In the above-described embodiment, the exposure apparatuses 1 and 50 are described as an example. However, the object of measuring the optical characteristics of the optical system may be another optical apparatus such as a wafer inspection apparatus. An optical characteristic measuring apparatus can be suitably applied.

Further, even in the optical system of the exposure apparatus, for example, the optical characteristics of the illumination optical system 17 may be measured in addition to the projection optical system PL.
In the above embodiment, the optical characteristic measuring devices 2 and 51 have been described by taking the example having the wavefront measuring function as an example, but are not limited to this measuring function. For example, a function for measuring the polarization state of light that has passed through the projection optical system PL, a function for measuring information on the light that has passed through the projection optical system PL, a function for measuring an aerial image formed by the projection optical system PL, and projection optics A function of measuring the numerical aperture of the system PL may be provided. The optical characteristics measured by these functions are important parameters that affect the exposure accuracy of the exposure apparatus, and are often measured and carefully adjusted. Therefore, by having each optical characteristic measurement function described above, it is possible to improve the working efficiency of the exposure apparatus by performing each measurement efficiently. Furthermore, an optical characteristic measuring apparatus having these functions alone may be configured, or an optical characteristic measuring apparatus having a plurality of functions among these functions may be configured.

  In the above embodiment, when the wafer stage WST passes the wafer W exchange position (FIG. 3C), the wafer W that has been exposed is exchanged with the wafer W that has not been exposed. However, it is not always necessary to place an unprocessed wafer W at this timing. In the above embodiment, the wafer stage WST moves to the wafer exchange position when exchanging the wafer. Therefore, the measurement process is performed in accordance with this timing. However, it is not always necessary to perform the measurement in accordance with the wafer exchange timing. .

  Further, the retreat position is a position away from the measurement position in the chamber (not shown) and is a position near the wafer stage WST as shown in FIG. 3 as long as it does not impair the motion performance of the wafer stage WST. It is not limited to. Further, it is not limited to the vicinity of the wafer exchange position.

  In the above embodiment, the wavefront aberration measuring unit 35 is moved between the retracted position and the measured position together with the wafer stage WST by moving the wafer stage WST in the X and Y directions (moving from the measured position to the retracted position). I made it. Alternatively, the wavefront aberration measurement unit 35 may be attached to the wafer stage WST at the measurement position from the retracted position by a mechanism separate from the wafer stage WST, regardless of the movement of the wafer stage WST. For example, a robot arm having a bendable joint is formed separately from wafer stage WST, and this robot arm conveys wavefront aberration measurement unit 35 in the retracted position to the measurement position, and wafer stage WST in the measurement position. You may comprise so that it may attach or detach with respect to.

  The dummy member 61 of 2nd Embodiment can be implemented similarly to 1st Embodiment. Moreover, in the said embodiment, although the dummy member 61 was made from titanium, it is not limited to this. For example, if polyethylene, beryllium, aluminum or the like having a large specific heat is used for the dummy member 61, the sensitivity to the surrounding temperature fluctuation is lowered, so that the temperature fluctuation can be smoothed. In addition, in the case where thermal expansion is an important factor for maintaining the mechanical accuracy, an invar having a low thermal expansion coefficient can be used. Thus, the material of the dummy member 61 can be changed as appropriate.

  Furthermore, the dummy member 61 can be made of a material having a high thermal conductivity and can be configured as a heat dissipation mechanism. From the wavefront aberration measurement unit 35 (measurement unit), Joule heat is generated from the main body or a power cable for operating the wavefront aberration measurement unit 35 or the like. Therefore, if left unattended, the temperature of wafer stage WST will rise. Here, if the dummy member 61 is a material having a high thermal conductivity, the heat can be effectively radiated, and in particular, the periphery of the mounting recess 34 can be quickly returned to the temperature of the atmosphere in the chamber. Further, if the dummy member 61 has a fin shape, a further heat dissipation effect can be obtained.

1 is a schematic block diagram of an exposure apparatus according to a first embodiment. The schematic diagram which shows the measurement of the wavefront aberration in a wavefront aberration measuring unit. (A)-(e) is a plane schematic diagram for demonstrating the attachment or detachment operation | movement of the wavefront aberration measuring unit with respect to a wafer stage. It is a schematic block diagram of the exposure apparatus of 2nd Embodiment, Comprising: The figure which shows especially the wafer stage vicinity. The figure for demonstrating the replacement | exchange operation | movement of a dummy member. The schematic block diagram of the gravity center position adjustment mechanism in another embodiment. The figure which shows the flowchart of the manufacture example of devices (semiconductor elements, such as IC and LSI, a liquid crystal display element, an image pick-up element (CCD etc.), a thin film magnetic head, a micromachine, etc.). The figure which shows an example of the detailed flow of step S104 of FIG. 7 in the case of a semiconductor device.

Explanation of symbols

  AX ... optical axis, PL ... lens barrel, R ... reticle, Rt ... test reticle, W ... wafer, WST ... wafer stage (detachable mechanism), 1,50 ... exposure device, 2,51 ... optical property measuring device, 3 ... Attachment / detachment mechanism, 17 ... illumination optical system, 25 ... wafer table, 26 ... wafer stage drive unit, 23 ... storage unit, 27 ... interferometer, 28 ... moving mirror, 29 ... wafer stage control unit (control device), 34 ... attachment Recessed part (mounting part), 35 ... wavefront aberration measuring unit (measuring unit), 36 ... light receiving surface (light receiving part), 41 ... main control system (control device), 42 ... wafer loader, 43 ... proximity sensor (detection mechanism), 52 ... Optical element, 53 ... Liquid, 58 ... Seal member, 61 ... Dummy member (complementary member), 62 ... Center of gravity adjustment mechanism, 63 ... Compensation member

Claims (15)

In an optical property measuring apparatus for measuring optical properties of an optical system,
A measurement unit that is detachably disposed on the moving stage and includes a light receiving unit that measures the optical characteristics of the optical system;
An attachment / detachment mechanism for attaching / detaching the measurement unit to / from the moving stage;
An optical characteristic measurement apparatus comprising: a control device that controls the attachment / detachment mechanism and attaches / detaches the movable stage to / from the measurement unit. The optical characteristic measurement according to claim 1, wherein the optical system is a projection optical system that projects a pattern formed on a mask onto a substrate, and the moving stage is a substrate stage that holds the substrate. apparatus. The measurement unit has a function of measuring a polarization state of light that has passed through the optical system, a function of measuring information of light that has passed through the optical system, a function of measuring an aerial image formed by the optical system, the optical The optical characteristic measuring apparatus according to claim 1, further comprising at least one function of measuring a numerical aperture of the system. 4. The optical characteristic measuring apparatus according to claim 1, wherein the measurement unit is attached to the moving stage by at least one of an air adsorption method, an electromagnet adsorption method, and a screw fastening method. . The optical according to any one of claims 1 to 4, wherein the attachment / detachment mechanism attaches / detaches the measurement unit at a retracted position away from a measurement position which is a position for measuring an optical characteristic of the optical system. Characteristic measuring device. 6. The optical characteristic measuring apparatus according to claim 5, wherein the control apparatus moves the moving stage to the retracted position based on retracted position data indicating the retracted position of the measurement unit. The controller has a detection mechanism for detecting approach or contact between the moving stage and the measurement unit, and the control device is configured to move the attachment / detachment mechanism to the attachment / detachment mechanism at the retracted position based on a signal detected by the detection mechanism. The optical property measuring apparatus according to claim 5 or 6, wherein attachment to the moving stage is started. The optical characteristic measuring apparatus according to claim 1, further comprising a center-of-gravity adjustment mechanism that keeps the center of gravity of the movable stage constant before and after the measurement unit is attached and detached. The center-of-gravity adjusting mechanism includes a compensation member that compensates for a change in the center of gravity of the movable stage caused by the weight of the measurement unit when the measurement unit is attached or removed. 8. The optical property measuring apparatus according to 8. The optical system is a projection optical system that projects a pattern formed on a mask onto a substrate, the moving stage is a substrate stage that holds the substrate, and the substrate stage is attached to which the measurement unit is attached Part is formed,
The measurement unit is attached to the attachment part at the time of measurement, and the optical characteristics of the projection optical system are measured via a liquid between the optical element on the substrate side of the projection optical system and the light receiving part of the measurement unit,
The optical characteristic measuring apparatus according to claim 1, wherein a complementary member having a shape corresponding to the shape of the attachment portion is arranged in the attachment portion during non-measurement. The optical property measuring apparatus according to claim 10, wherein the attachment portion is formed in an attachment recess formed in the substrate stage. 11. A seal part for preventing liquid leakage of the liquid is formed in a gap between the attachment part and the measurement unit or a gap between the attachment part and the complementary member. 11. The optical property measuring apparatus according to 11. An optical property measuring method, comprising: measuring an optical property of an optical system using the optical property measuring apparatus according to claim 1. In an exposure apparatus that exposes a pattern image formed on a mask on a reticle stage onto a substrate on a wafer stage via a projection optical system,
An exposure apparatus comprising the optical property measuring apparatus according to claim 1. 15. A device manufacturing method including a lithography process, wherein exposure is performed using the exposure apparatus according to claim 14 in the lithography process.

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