JP2006202436A - Method of forming thin-film pattern and method of manufacturing thin-film magnetic head - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of forming a thin-film pattern, capable of more accurately and easily forming the thin-film pattern having the minute dimension. <P>SOLUTION: After a soluble layer 102Z consisting of Al<SB>2</SB>O<SB>3</SB>is formed on a 1st thin-film 111Z, a lower resist layer 103Z and an upper resist layer 104Z are successively formed thereon. The lower and upper resist layers 103Z, 104Z are selectively exposed to form a double layer resist pattern 105, and by dry etching using the pattern 105 as a mask, the 1st thin-film 111Z and the soluble layer 102Z are selectively etched. Thus, a deformation of the 1st thin-film pattern 111 at an end part 111T is suppressed, and an exact patterning is attained. Further, since the double layer resist pattern 105 and the soluble layer pattern 102 are arranged so as to be successively removed by using specified solvents respectively for them, so that a burr does not occur on an upper surface of the 1st thin-film pattern 111, then a smooth lift-off is attained. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a method for forming a thin film pattern using a dry etching method using a resist pattern as a mask, and a method for manufacturing a thin film magnetic head including a thin film pattern formed thereby.

Conventionally, various thin film patterns are frequently used in electronic and magnetic devices such as thin film magnetic heads and semiconductor devices formed by using a thin film formation process. For example, a magnetoresistive (MR) element in which a magnetic thin film or the like is laminated is used in a thin film magnetic head, and a wiring pattern made of a conductive thin film is used in a semiconductor device. As such a thin film pattern, in addition to an island-shaped or strip-shaped thin film pattern, a thin film pattern having a through hole (opening) may be used. As a method for forming these thin film patterns, there is a dry etching method using a resist pattern as a mask. In this method, a thin film is first formed on the entire surface of a substrate, and then a resist pattern having a desired pattern shape is formed on the thin film by photolithography or the like. Next, an undercut is formed in the resist pattern. Furthermore, a thin film pattern having a desired shape is formed by performing dry etching such as ion milling using a resist pattern having an undercut as a mask. This dry etching method is disclosed in Patent Document 1, for example.
JP-T-2003-517893

  In recent years, electronic and magnetic devices have been remarkably miniaturized, and accordingly, there has been an increasing demand for miniaturization of thin film patterns. However, when trying to form a fine thin film pattern using the conventional dry etching method as described above, the reattachment generated during dry etching forms burrs when the resist pattern is lifted off. There has been a problem that a highly accurate thin film pattern cannot be obtained.

In order to solve such a problem, for example, a patterning method as described in Patent Document 2 has been proposed. In this patterning method, a peeling film that is patterned simultaneously with the film to be patterned and finally removed is formed on the film to be patterned. Thereby, the reattachment can be removed together with the release film after patterning, and the formation of burrs can be prevented.
JP 2002-363730 A

  However, in the patterning method described in Patent Document 2, since a resin (resist) is used for the peeling film, the peeling film changes in quality due to heat generated during patterning and is burned onto the patterning film. The problem that it becomes difficult to peel from the patterning film occurs. Such a problem appears remarkably when the etching amount exceeds, for example, 0.3 μm in the thickness direction.

  The present invention has been made in view of such a problem, and a first object thereof is to provide a thin film pattern forming method capable of forming a thin film pattern having a minute dimension with higher accuracy and ease. is there. A second object of the present invention is to provide a method of manufacturing a thin film magnetic head using the method of forming a thin film pattern as described above.

The method for forming a thin film pattern of the present invention includes the following steps (1) to (6).
(1) A step of forming a first thin film on a substrate.
(2) A step of forming a soluble layer made of aluminum oxide on the first thin film.
(3) A step of forming a resist pattern on the soluble layer.
(4) A step of selectively etching the first thin film and the soluble layer by a dry etching method using the resist pattern as a mask to form the first thin film pattern and the soluble layer pattern.
(5) A step of dissolving and removing the resist pattern using a first solvent capable of dissolving the constituent material of the resist pattern.
(6) A step of dissolving and removing the soluble layer pattern using a second solvent capable of dissolving aluminum oxide.

In the method for forming a thin film pattern according to the present invention, a soluble layer is formed on the first thin film, and then a resist pattern is formed on the soluble layer. Are separated from each other by a soluble layer. Furthermore, after the first thin film and the soluble layer are selectively etched by dry etching using the resist pattern as a mask, the resist pattern is dissolved and removed using the first solvent and soluble using the second solvent. Since the layer pattern is dissolved and removed, the resist pattern is easily separated from the first thin film pattern. Here, since the soluble layer pattern is made of aluminum oxide (for example, Al ₂ O ₃ ) having excellent heat resistance, the first thin film pattern and the first thin film pattern are not changed by heat applied during the dry etching. No seizure occurs. Even if the resist pattern is altered by heat during dry etching, there is no influence on the first thin film pattern separated by the soluble layer pattern.

  The method for forming a thin film pattern of the present invention further includes a step of forming a second thin film so as to cover the resist pattern and the region where the first thin film and the soluble layer have been removed, and at least possible using a solvent. The second thin film pattern may be formed by removing the solution layer pattern.

  In the method for forming a thin film pattern of the present invention, an alkaline solvent such as tetramethylammonium hydroxide (TMAH) can be used as the second solvent.

  In the thin film pattern forming method of the present invention, an isolated resist pattern having an island shape or a band shape is formed, and the isolated first thin film pattern and soluble layer pattern having the same shape as the isolated resist pattern are formed. May be formed. Alternatively, an opening type resist pattern having an opening may be formed, and an opening type first thin film pattern and a soluble layer pattern having the same shape as the opening type resist pattern may be formed.

The method of manufacturing a thin film magnetic head according to the present invention has a thin film coil that generates magnetic flux when supplied with an electric current, a medium facing surface that faces the magnetic recording medium, and directs the magnetic flux generated by the thin film coil to the magnetic recording medium. An upper magnetic pole layer configured to emit and a thin film coil are sandwiched with the upper magnetic pole layer through an insulating layer, and a magnetic flux emitted from the upper magnetic pole layer and magnetizing the magnetic recording medium flows in. A method of manufacturing a thin film magnetic head having a lower magnetic pole layer configured to include a leading end portion on a substrate, and includes the following steps (A) to (F): .
(A) A step of forming a magnetic film on the substrate.
(B) A step of forming a soluble layer made of aluminum oxide on the magnetic film.
(C) A step of selectively forming a resist pattern in a first region on the soluble layer corresponding to a portion where the tip portion of the magnetic film is to be formed.
(D) Using the dry etching method using the resist pattern as a mask, etching all of the soluble layer in the thickness direction in the second region other than the first region and part of the thickness direction of the magnetic film in the second region. Forming a fusible layer pattern and a bottom pole layer having a step in the thickness direction between the first region and the second region.
(E) A step of dissolving and removing the resist pattern using a first solvent capable of dissolving the constituent material of the resist pattern.
(F) A step of dissolving and removing the soluble layer pattern using a second solvent capable of dissolving aluminum oxide.

In the method of manufacturing a thin film magnetic head according to the present invention, a soluble layer is formed between the magnetic film to be the lower magnetic pole layer and the resist pattern later, so that the magnetic film and the resist pattern are separated from each other by the soluble layer. A structure is formed. Further, the magnetic film and the soluble layer are selectively etched by dry etching using the resist pattern as a mask to form the bottom pole layer and the soluble layer pattern, and then the resist pattern is dissolved and removed using the first solvent. In addition, since the soluble layer pattern is dissolved and removed using the second solvent, the resist pattern is easily separated from the lower magnetic pole layer. Here, since the fusible layer pattern is made of aluminum oxide (for example, Al ₂ O ₃ ) having excellent heat resistance, it is not altered by the heat applied during the dry etching, and the lower magnetic pole layer pattern No seizure occurs. Even if the resist pattern is altered by heat during dry etching, there is no influence on the bottom pole layer pattern separated by the soluble layer pattern.

  In the method for manufacturing a thin film magnetic head of the present invention, the lower magnetic pole layer is made of a metal containing at least one of cobalt iron alloy (CoFe), nickel iron alloy (NiFe), and cobalt nickel iron alloy (CoNiFe). It is preferable.

  According to the method for forming a thin film pattern of the present invention, after forming a soluble layer made of aluminum oxide between the first film film and the resist pattern, the first thin film and the resist film are dry-etched using the resist pattern as a mask. The soluble layer is selectively etched, and the resist pattern is dissolved and removed using the first solvent, and the soluble layer pattern is dissolved and removed using the second solvent. The first thin film pattern and the resist pattern separated by the soluble layer pattern can be easily separated without being affected by the above. Therefore, the first thin film pattern having a smaller dimension can be easily formed with high accuracy.

  According to the method of manufacturing a thin film magnetic head of the present invention, a fusible layer made of aluminum oxide is formed between a magnetic film to be a lower magnetic pole layer and a resist pattern, and then dry etching using the resist pattern as a mask. The bottom pole layer and the soluble layer pattern are formed, and the resist pattern is dissolved and removed using the first solvent, and the soluble layer pattern is dissolved and removed using the second solvent. The lower magnetic pole layer and the resist pattern separated by the fusible layer pattern can be easily separated without being affected by the applied heat. Therefore, a thin film magnetic head including a lower magnetic pole layer having a smaller dimension can be formed with high accuracy and easily.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

[First Embodiment]
First, a method for forming a thin film pattern according to the first embodiment of the present invention will be described. FIG. 1 is a configuration diagram of a thin film pattern 100 including first and second thin film patterns 111 and 112 formed by the thin film pattern forming method according to the present embodiment. FIG. 1A shows a planar configuration, and FIG. 1B shows a cross-sectional configuration in the direction of the arrow along the IB-IB cutting line in FIG.

  As shown in FIG. 1A, the first thin film pattern 111 is an isolated thin film pattern having a width W and a length L and having a substantially rectangular shape defined by a contour 109. As shown in FIG. 1B, the second thin film pattern 112 is formed so as to continuously surround and cover the periphery so as to be in contact with the end surface of the peripheral portion of the first thin film pattern 111. The first thin film pattern 111 is made of a conductive magnetic material, and the second thin film pattern 112 is made of an insulating nonmagnetic material. The structure of the first and second thin film patterns 111 and 112 may be a single layer structure or a stacked structure in which a plurality of layers are stacked. Hereinafter, a method for forming the thin film pattern 100 will be described in order with reference to FIGS. 2 to 8 are cross-sectional views showing respective steps in the thin film pattern forming method according to the present embodiment.

First, as shown in FIG. 2, a first thin film 111Z to be a first thin film pattern 111 is formed on a substrate 101 made of, for example, aluminum oxide (Al ₂ O ₃ ), for example, using nickel iron alloy (NiFe). And formed over the entire surface by plating and sputtering.

Next, the soluble layer 102Z is formed on the first thin film 111Z by, for example, a sputtering method. Here, aluminum oxide (Al ₂ O ₃ ) is used as a constituent material, and the soluble layer 102Z is formed so as to have a thickness of, for example, 0.1 μm. Subsequently, the lower resist layer 103Z and the upper resist layer 104Z are sequentially stacked using, for example, a spin coating method so as to cover the entire surface of the soluble layer 102Z. Here, for example, a resist material mainly composed of polymethylglutarimide (PMGI), which is an alkali-soluble resin, is applied, and heat treatment is performed as necessary to form a thickness of about 0.3 μm to 0.5 μm. Then, a lower resist layer 103Z is formed. After that, for example, a positive resist material mainly composed of polyhydroxystyrene is applied, and heat treatment is performed as necessary to form the upper resist layer 104Z so as to have a thickness of about 2.0 μm. Thus, the first thin film 111Z and the lower resist layer 103Z can be separated from each other by the soluble layer 102Z.

  Next, a photolithography process is performed on the lower resist layer 103Z and the upper resist layer 104Z, thereby forming a two-layer resist pattern 105 including the lower layer portion 103 and the upper layer portion 104. Specifically, first, as shown in FIG. 3, the lower and upper resist layers 103Z and 104Z are selectively exposed through a photomask 107 having an opening 107E having a predetermined shape to form a latent image portion 105E. To do. After that, for example, heat treatment is performed in an atmosphere of 120 ° C. for 60 seconds, and the latent image portion 105E and a part of the lower resist layer 103Z are dissolved using a predetermined developer (eg, tetramethylammonium hydroxide aqueous solution). It develops by removing and performs washing with water and drying. By doing so, as shown in FIG. 4, an isolated two-layer resist pattern 105 having an island shape composed of the lower layer portion 103 and the upper layer portion 104 and defined by the contour 109A is formed. As shown in FIG. 4A, the two-layer resist pattern 105 has, for example, a width W1 and a length L1 corresponding to the width W and the length L which are dimensions of the first thin film pattern 111 to be formed. have. 4A shows a plan configuration in the process following FIG. 3, and FIG. 4B shows a cross-sectional configuration in the direction of the arrow along the IVB-IVB cutting line in FIG. 4A.

  In this case, since an alkali-soluble resin is used for the lower resist layer 3, the undercut portion 108 as shown in FIG. 4B can be formed by using an alkali developer. The size of the width W2 of the undercut portion 108 can be controlled by, for example, the concentration of the developer and the development time. Note that the optimum value of the width W2 varies depending on the material and thickness of the fusible layer 102Z and the first thin film 111Z, the size of the two-layer resist pattern 105, the thickness of the lower layer portion 103 and the upper layer portion 104, or the dry etching method. Should be determined in consideration of various conditions.

After forming the two-layer resist pattern 105, as shown in FIG. 5, using this two-layer resist pattern 105 as a mask, for example, a dry etching method such as ion milling or reactive ion etching (RIE). Is used to selectively etch the first thin film 111Z and the soluble layer 102Z, thereby forming the isolated first thin film pattern 111 and the soluble layer pattern 102 having the same shape as the two-layer resist pattern 105. . Here, since dry etching is performed in a state where the fusible layer 102Z covers the first thin film 111Z, the end portion 111T of the first thin film pattern 111 to be patterned is less likely to be deformed. If dry etching is performed without forming the fusible layer 102, the end portion 111T is deformed and rounded. In the present embodiment, as described above, the end portion 111T is less likely to be deformed. Therefore, the first thin film pattern 111 corresponds to the contour 109A of the two-layer resist pattern 105 and is more accurately defined. Further, during this etching operation, a part of the first thin film 111Z once removed from the substrate 1 and scattered is reattached 106 on the end surface of the two-layer resist pattern 105 or the end surface of the soluble layer pattern 102. It will reattach. Here, since the soluble layer pattern 102 is made of Al ₂ O ₃ having excellent heat resistance, heat applied during the dry etching (for example, heat transmitted from the first thin film 111Z or the reattachment 106). ). Therefore, no burn-in with the first thin film pattern 111 occurs. Even if the two-layer resist pattern 105 is deteriorated by heat during dry etching, there is no influence on the first thin film pattern 111 separated by the soluble layer pattern 102.

After that, as shown in FIG. 6, so as to cover the whole, that is, to cover the substrate 101 and the two-layer resist pattern 105 exposed by selectively etching the first thin film 111Z and the soluble layer 102Z. In addition, for example, the second thin film 112Z is formed by sputtering or the like using Al ₂ O ₃ as a constituent material. At this time, the soluble layer pattern 102 is also heated, but it does not cause seizure or alteration.

  Finally, the two-layer resist pattern 105 covered with the second thin film 112Z is removed by a lift-off operation. Here, first, a predetermined solvent (for example, an organic solvent such as N-methylpyrrolidone maintained at 50 ° C.) capable of dissolving the two-layer resist pattern 105 is dissolved and removed. As a result, as shown in FIG. 7, the second thin film 112Z covering the two-layer resist pattern 105 is lifted off. At this stage, the soluble layer pattern 102 in which a part of the reattachment 106 is left on the surface remains on the upper surface of the first thin film pattern 111. Thereafter, the soluble layer pattern 102 is dissolved and removed by using a predetermined solvent capable of dissolving the soluble layer pattern 102 (for example, an alkaline solvent such as tetramethylammonium hydroxide (TMAH)). As described above, an isolated first thin film pattern 111 having an island shape defined by the contour 109, and a second thin film pattern 112 disposed so as to surround the first thin film pattern 111 and to be adjacent to the peripheral edge thereof. The thin film pattern 100 having the above is completed.

As described above, according to the present embodiment, since the lower resist layer 103Z is formed after forming the soluble layer 102Z made of Al ₂ O ₃ on the first thin film 111Z, the first thin film 111Z. And the isolated two-layer resist pattern 105 can be separated from each other by the soluble layer 102Z. Furthermore, since the first thin film 111Z and the soluble layer 102Z are selectively etched by dry etching using the two-layer resist pattern 105 as a mask, the occurrence of mold deformation at the end 111T of the first thin film pattern 111 is suppressed. , Patterning can be performed more accurately. After etching the first thin film 111Z and the soluble layer 102Z, the two-layer resist pattern 105 and the soluble layer pattern 102 are sequentially removed using a predetermined solvent. The two-layer resist pattern 105 can be easily lifted off without generating burrs on the upper surface. Therefore, according to the present embodiment, the isolated first thin film pattern 111 having a finer dimension and defined by the contour 109 and the second thin film pattern 112 provided adjacently so as to surround the first thin film pattern 111 are provided. It can be formed with high accuracy and ease. The shape of the first thin film pattern 111 is not limited to the rectangular shape defined by the contour 109 shown in FIG. 1, and may be a circle, an ellipse, an elongated band, or a combination thereof. The above effects can be obtained.

[Second Embodiment]
Next, a method for forming a thin film pattern according to the second embodiment of the present invention will be described below.

  In the first embodiment, the case where the isolated first thin film pattern 111 having the same shape is formed using the island-shaped isolated two-layer resist pattern 105 has been described. In contrast, in the present embodiment, a case where an opening-type thin film pattern having an opening having the same shape as this opening is formed using an opening-type resist pattern having an opening will be described.

  FIG. 9 is a configuration diagram of a thin film pattern 200 including first and second thin film patterns 121 and 122 formed by the thin film pattern forming method according to the present embodiment. Note that FIG. 9A illustrates a planar configuration, and FIG. 9B illustrates a cross-sectional configuration in the direction of the arrow along the IXB-IXB cutting line in FIG. 9A.

  As shown in FIG. 9A, the first thin film pattern 121 is an opening-type thin film pattern having an opening having a substantially rectangular shape defined by a contour 209 having a width W and a length L. As shown in FIG. 9B, the second thin film pattern 122 is formed so as to fill the opening of the first thin film pattern 121. The first thin film pattern 121 is made of a conductive magnetic material, and the second thin film pattern 122 is made of an insulating nonmagnetic material. The structure of the first and second thin film patterns 121 and 122 may be a single layer structure or a stacked structure in which a plurality of layers are stacked. Hereinafter, a method of forming the thin film pattern 200 will be described in order with reference to FIGS. 10 to 16 are cross-sectional views showing respective steps in the thin film pattern forming method according to the present embodiment.

First, as shown in FIG. 10, on a substrate 201 made of, for example, aluminum oxide (Al ₂ O ₃ ), a first thin film 121Z that will later become a first thin film pattern 121 is made of, for example, a nickel iron alloy (NiFe). The entire surface is formed by sputtering or plating.

Next, the soluble layer 202Z is formed on the first thin film 121Z by, for example, a sputtering method. Here, aluminum oxide (Al ₂ O ₃ ) is used as a constituent material, and the soluble layer 202Z is formed so as to have a thickness of, for example, 0.1 μm. Subsequently, the lower resist layer 203Z and the upper resist layer 204Z are sequentially stacked using, for example, a spin coat method so as to cover the entire surface of the soluble layer 202Z. Here, for example, a resist material mainly composed of polymethylglutarimide (PMGI), which is an alkali-soluble resin, is applied, and heat treatment is performed as necessary to form a thickness of about 0.3 μm to 0.5 μm. Then, a lower resist layer 203Z is formed. After that, for example, a positive resist material mainly composed of polyhydroxystyrene is applied, and heat treatment is performed as necessary to form the upper resist layer 204Z so as to have a thickness of about 2.0 μm. By doing so, the first thin film 121Z and the lower resist layer 203Z can be separated by the soluble layer 202Z.

  Next, a photolithography process is performed on the lower resist layer 203Z and the upper resist layer 204Z to form a two-layer resist pattern 205 including the lower layer portion 203 and the upper layer portion 204. Specifically, first, as shown in FIG. 11, the lower and upper resist layers 203Z and 204Z are selectively exposed through a photomask 207 having an opening 207E having a predetermined shape to form a latent image portion 205E. To do. After that, for example, heat treatment is performed in an atmosphere of 120 ° C. for 60 seconds, and further, the latent image portion 205E and a part of the lower resist layer 203Z are dissolved using a predetermined developer (for example, tetramethylammonium hydroxide aqueous solution). It develops by removing and performs washing with water and drying. By doing so, as shown in FIG. 12, an opening-type two-layer resist pattern 205 is formed which includes the lower layer portion 203 and the upper layer portion 204 and has an opening defined by the outline 209A. As shown in FIG. 12A, the opening of the two-layer resist pattern 205 has, for example, a width W1 corresponding to a width W and a length L which are dimensions of the opening of the first thin film pattern 121 to be formed. And has a length L1. 12A shows a plan configuration in the process following FIG. 11, and FIG. 12B shows a cross-sectional configuration in the arrow direction along the XIIB-XIIB cutting line in FIG.

  In this case, since the alkali-soluble resin is used for the lower resist layer 203Z, the undercut portion 208 as shown in FIG. 12B can be formed by using an alkali developer. The size of the width W2 of the undercut portion 108 can be controlled by, for example, the concentration of the developer and the development time. Note that the optimum value of the width W2 varies depending on the material and thickness of the fusible layer 202Z and the first thin film 121Z, the size of the two-layer resist pattern 205, the thickness of the lower layer portion 203 and the upper layer portion 204, or the dry etching method. Should be determined in consideration of various conditions.

After forming the two-layer resist pattern 205, as shown in FIG. 13, the first thin film 121Z and the soluble layer 202Z are selectively etched using the two-layer resist pattern 205 as a mask and using a dry etching method. By doing so, an opening-type first thin film pattern 121 and a soluble layer pattern 202 having openings having the same shape as the two-layer resist pattern 205 are formed. Here, since the dry etching is performed in a state where the soluble layer 202Z covers the first thin film 121Z, the end portion 121T of the first thin film pattern 121 to be patterned is less likely to be deformed. Therefore, the first thin film pattern 121 corresponds to the outline 209A of the two-layer resist pattern 205 and is more accurately defined. Further, during this etching operation, a part of the first thin film 121Z that has been once removed from the substrate 1 and scattered is reattached 206 on the end surface of the two-layer resist pattern 205 or the end surface of the soluble layer pattern 202. It will reattach. Here, since the fusible layer pattern 202 is made of Al ₂ O ₃ having excellent heat resistance and heat dissipation, it is transmitted from the heat applied during the dry etching (for example, from the first thin film 121Z or the reattachment 206). The heat does not change. Therefore, the image sticking with the first thin film pattern 121 does not occur. Even if the two-layer resist pattern 205 is deteriorated by heat during dry etching, the first thin film pattern 121 separated by the soluble layer pattern 202 is not affected.

After that, as shown in FIG. 14, for example, Al ₂ O ₃ is used as a constituent material so as to cover the substrate 201 and the two-layer resist pattern 205 exposed by etching the first thin film 121Z and the soluble layer 202Z. As a result, the second thin film 122Z is formed by sputtering or the like. In this case, the soluble layer pattern 202 is also heated, but it does not cause seizure or alteration.

  Finally, the two-layer resist pattern 205 covered with the second thin film 122Z is removed by a lift-off operation. Here, first, the two-layer resist pattern 205 is dissolved and removed using a predetermined solvent that can be dissolved. Thereby, as shown in FIG. 15, the second thin film 122Z covering the two-layer resist pattern 205 is lifted off. At this stage, the soluble layer pattern 202 in which a part of the reattachment 206 is left on the surface remains on the upper surface of the first thin film pattern 121. Thereafter, the soluble layer pattern 202 is dissolved and removed using a predetermined solvent capable of dissolving the soluble layer pattern 202 (for example, an alkaline solvent such as tetramethylammonium hydroxide (TMAH)). As described above, a thin film pattern 200 having an opening type first thin film pattern 121 having an opening defined by a contour 209 and a second thin film pattern 122 formed so as to fill the opening of the first thin film pattern 121 is provided. Complete.

As described above, according to the present embodiment, since the lower resist layer 203Z is formed after forming the soluble layer 202Z made of Al ₂ O ₃ on the first thin film 121Z, the first thin film 121Z. And the isolated two-layer resist pattern 205 can be separated from each other by the soluble layer 202Z. Furthermore, since the first thin film 121Z and the soluble layer 202Z are selectively etched by dry etching using the two-layer resist pattern 205 as a mask, it is possible to suppress the occurrence of mold deformation at the end 121T of the first thin film pattern 121. , Patterning can be performed more accurately. After etching the first thin film 121Z and the soluble layer 202Z, the two-layer resist pattern 205 and the soluble layer pattern 202 are sequentially removed using a predetermined solvent. The two-layer resist pattern 205 can be easily lifted off without generating burrs on the upper surface. Therefore, according to the present embodiment, the opening-type first thin film pattern 121 having a finer dimension and defined by the outline 209 and the second thin film pattern 122 provided so as to embed the opening are highly accurate. And it can form easily. The shape of the first thin film pattern 121 is not limited to the rectangular shape defined by the contour 209 shown in FIG. 9 (FIG. 16), and may be a circle, an ellipse, an elongated band, or a combination thereof. In this case, the above effect can be obtained.

[Third Embodiment]
Next, a method for manufacturing a thin film magnetic head according to the third embodiment of the invention will be described.

  First, with reference to FIG. 17 and FIG. 18, the configuration of a magnetic disk drive equipped with a thin film magnetic head manufactured by the method of manufacturing a thin film magnetic head according to the present embodiment will be described. FIG. 17 is a perspective view showing the internal configuration of the magnetic disk device, and FIG. 18 is an enlarged perspective view showing the appearance of the head slider, which is the main part of the magnetic disk device.

  This magnetic disk apparatus employs a CSS (Contact-Start-Stop) operation system as a drive system. For example, a magnetic disk 52 as a magnetic recording medium on which information is recorded in the housing 51. And a head arm assembly (HAA) 53 for recording information on the magnetic disk 52 and reproducing the information. The HAA 53 includes a head gimbal assembly (HGA) 54, an arm 55 that supports the base of the HGA 54, and a drive unit 56 that serves as a power source for rotating the arm 55. The HGA 54 includes a magnetic head slider (hereinafter simply referred to as a “slider”) 54A in which the thin film magnetic head 20 (described later) according to the present embodiment is provided on one side surface, and a suspension in which the slider 54A is attached to one end. 54B. The other end of the suspension 54B (the end opposite to the slider 54A) is supported by the arm 55. The arm 55 is configured to be rotatable via a bearing 58 with a fixed shaft 57 fixed to the housing 51 as a central axis. The drive part 56 consists of a voice coil motor etc., for example. The magnetic disk device includes a plurality of (four in FIG. 17) magnetic disks 52, and sliders 54A are arranged corresponding to the recording surfaces (front and back surfaces) of each magnetic disk 52, respectively. It has become. Each slider 54A can move in a direction (X direction) across the recording track in a plane parallel to the recording surface of each magnetic disk 52. On the other hand, the magnetic disk 52 rotates around a spindle motor 59 fixed to the casing 51 in a direction 52R substantially orthogonal to the X direction. Information is recorded on or read from the magnetic disk 52 by rotating the magnetic disk 52 and moving the slider 54A.

  As shown in FIG. 18, the slider 54 </ b> A includes a substantially rectangular parallelepiped base 61 having a concavo-convex structure formed to reduce the air resistance when the arm 55 rotates, and of the base 61, the magnetic disk 52 is attached to the magnetic disk 52. The thin film magnetic head 20 is disposed on one side surface (front surface in FIG. 18) orthogonal to the opposing recording medium facing surface 61A (hereinafter referred to as ABS 61A). In FIG. 18, in order to make the uneven structure on the ABS 61A side visible, the state shown in FIG.

Next, the configuration of the thin film magnetic head 20 will be described with reference to FIGS. 19 and 20. FIG. 19 shows a cross-sectional configuration perpendicular to the ABS 61A of the thin film magnetic head 20, and FIG. 20 shows a cross-sectional configuration parallel to the ABS 61A. As shown in FIGS. 19 and 20, the thin film magnetic head 20 includes a substrate 1 made of a ceramic material such as AlTiC (Al ₂ O ₃ .TiC), and aluminum oxide (Al ₂ O formed on the substrate 1). ₃ ) An insulating layer 2 made of an insulating material such as ₁ ), a lower shield layer 3 made of a magnetic material formed on the insulating layer 2, and a reproducing element formed on the lower shield layer 3 via an insulating layer 4 A magnetoresistive effect (MR) element 5 and an upper shield layer 6 made of a magnetic material formed on the MR element 5 with an insulating layer 4 interposed therebetween. One end of the MR element 5 is exposed to the ABS 61A. The MR element 5 is an element using a magnetosensitive film exhibiting a magnetoresistive effect such as an AMR (anisotropic magnetoresistive effect) element, a GMR (giant magnetoresistive effect) element, or a TMR (tunnel magnetoresistive effect) element. be able to.

The thin film magnetic head 20 further includes a nonmagnetic layer 7 made of a nonmagnetic material formed on the upper shield layer 6, and a cobalt iron alloy (CoFe), nickel iron alloy (NiFe alloy) formed on the nonmagnetic layer 7. ), A lower magnetic pole layer 8 made of a magnetic material such as cobalt nickel iron alloy (CoNiFe), and a recording gap layer 9 made of a nonmagnetic material such as aluminum oxide (Al ₂ O ₃ ) formed on the lower magnetic pole layer 8. And a first layer portion 10 of a thin film coil formed on the recording gap layer 9 and an insulating layer 11 corresponding to a slow height restricting layer covering the first layer portion 10. In the recording gap layer 9, a contact hole 9A is formed in the central portion of the first layer portion. The first layer portion is formed of a conductive material such as copper (Cu). In FIG. 19, reference numeral 10 </ b> A represents a connection portion of the first layer portion 10 that is connected to a second layer portion 15 of a thin film coil to be described later. The first layer portion 10 is formed so as to wind around the contact hole 9A. An end of the insulating layer 11 on the ABS 61A side is disposed at a position away from the ABS 61A, and this end defines the slow height. In addition, a portion of the upper surface of the insulating layer 11 from the end on the ABS 61A side of the insulating layer 11 to the vicinity of the outer peripheral end of the first layer portion 10 forms a slope that approaches the lower magnetic pole layer 8 as it approaches the ABS 61A. is doing.

  The thin film magnetic head 20 is further disposed in the contact hole 9A and the magnetic pole part layer 12A formed on the recording gap layer 9 and the insulating layer 11 in a region from the ABS 61A to a position in the middle of the slope of the insulating layer 11. The coupling portion layer 12B formed on the lower magnetic pole layer 8 and the insulating layer 14 disposed around the pole portion layer 12A and the coupling portion layer 12B are provided.

  The thin film magnetic head 20 further includes a second layer portion 15 of a thin film coil formed on the insulating layer 14, an insulating layer 16 covering the second layer portion 15, a magnetic pole portion layer 12A, insulating layers 14, 16 and A yoke portion layer 12C formed on the coupling portion layer 12B and an overcoat layer 17 formed so as to cover the yoke portion layer 12C and the insulating layer 16 are provided. The yoke portion layer 12C connects the magnetic pole portion layer 12A and the connecting portion layer 12B. The end of the yoke portion layer 12C on the ABS 61A side is disposed at a position away from the ABS 61A. The second layer portion 15 is made of a conductive material such as copper. In FIG. 19, reference numeral 15 </ b> A represents a connection portion of the second layer portion 15 that is connected to the connection portion 10 </ b> A of the first layer portion 10. The magnetic pole portion layer 12A, the coupling portion layer 12B, and the yoke portion layer 12C constitute the upper magnetic pole layer 12, and all are made of a magnetic material such as CoFe, NiFe, CoNiFe. The magnetic pole portion layer 12A includes a magnetic pole portion that defines the track width, and the yoke portion layer 12C is a yoke portion of the upper magnetic pole layer 12.

  As described above, the thin film magnetic head 20 has a structure in which the reproducing head facing the ABS 61A facing the magnetic disk 52 and the recording head (inductive electromagnetic transducer) are combined. Specifically, the MR element 5, the lower shield layer 3 and the upper shield layer 6 that are arranged so that a part of the ABS 61A side is opposed to each other with the MR element 5 interposed therebetween and function to shield the MR element 5. Is a portion corresponding to the reproducing head. On the other hand, the magnetic pole portion of the lower magnetic pole layer 8 includes the lower magnetic pole layer 8 and the upper magnetic pole layer 12 that are joined to each other at a position retracted from the ABS 61A that is opposite to the magnetic pole portion. Winding around the junction between the recording gap layer 9 and the lower magnetic pole layer 8 and the upper magnetic pole layer 12 which are arranged between the magnetic pole portion and the magnetic pole portion of the upper magnetic pole layer 12 and define the facing distance between these magnetic pole portions The first and second layer portions 10 and 15 of the thin film coil and the first and second layers of the thin film coil disposed between the lower magnetic pole layer 8 and the upper magnetic pole layer 12. The insulating layers 11, 14, and 16 that insulate the portions 10 and 15 from the lower magnetic pole layer 8 and the upper magnetic pole layer 12 are portions corresponding to the recording head.

  Next, with reference to FIGS. 21 and 22, the structure in the vicinity of the magnetic pole portions of the lower magnetic pole layer 8 and the upper magnetic pole layer 12 will be described in detail. FIG. 21 is an enlarged cross-sectional view of a main part of the thin film magnetic head 20.

  A surface (upper surface) of the bottom pole layer 8 on the recording gap layer 9 side includes a first end disposed so as to coincide with the ABS 61A and a second end disposed at a position away from the ABS 61A in the + Y direction. It has a surface 8A and a second surface 8B arranged at a position further away from the ABS 61A in the + Y direction than the first surface 8A. Further, the second surface 8B has a third surface 8C (not shown in FIGS. 19 and 21) on the side opposite to the ABS 61A. A step D1 is provided between the first surface 8A and the third surface 8C and the second surface 8B, and the second surface 8B is the first surface 8A and the third surface 8C. It is lower by one step so as to go away from the upper magnetic pole layer 12 (−Z direction). The step D1 is desirably 0.1 μm or more and 1 μm or less. This is because if the step D1 is less than 0.1 μm, the effect of suppressing leakage of magnetic flux between the magnetic pole portion layer 12A and the lower magnetic pole layer 8 is reduced, and the overwrite characteristics tend to deteriorate. On the other hand, if the level difference D1 exceeds 1 μm, a state in which the magnetic flux is oversaturated easily occurs in the magnetic pole portion of the lower magnetic pole layer 8. The second surface 8B is covered with the insulating layer 11.

  The recording gap layer 9 is formed so as to continuously cover the first surface 8A and a part of the insulating layer 11.

  Further, the magnetic pole portion layer 12A has, on the recording gap layer 9 side, a first surface 12AA facing the first surface 8A with the recording gap layer 9 in between, and a second surface with the recording gap layer 9 and the insulating layer 11 in between. It is comprised so that 2nd surface 12AB which opposes a partial area | region of the surface 8B of this may be included. The boundary position between the first surface 12AA and the second surface 12AB coincides with the position of the end portion 11A on the ABS 61A side of the insulating layer 11, and defines the slow height TH.

  FIG. 22 is a plan view of the magnetic pole part layer 12 </ b> A of the upper magnetic pole layer 12. As shown in FIG. 22, the magnetic pole portion layer 12A includes a track width defining portion 12A1 having one end portion coincident with the ABS 61A and the other end portion disposed at a position away from the ABS 61A in the + Y direction, and the track width defining portion. 12A1 connected to the other end of 12A1. The track width defining portion 12A1 has a constant width equal to the recording track width. That is, the track width defining portion 12A1 defines the recording track width. The width of the connecting portion 12A2 is equal to the width of the track width defining portion 12A1, and gradually increases with increasing distance from the track width defining portion 12A1, and then becomes a constant size. The connecting portion 12A2 is connected to the yoke partial layer 12C.

  In the thin film magnetic head 20 having the above structure, the upper magnetic pole layer 12 has a magnetic pole part layer 12A and a yoke part layer 12C, and the recording track width is defined by the track width defining part 12A1 of the magnetic pole part layer 12A. Yes. As a result, it is possible to accurately form a fine magnetic pole portion that defines the recording track width as compared with the case where the upper magnetic pole layer 12 is formed of a single layer. In the thin film magnetic head 20, the lower magnetic pole layer 8 is configured to have the second surface 8B that is farther from the magnetic pole portion layer 12A than the first surface 8A. The distance between the two in the region where the magnetic pole portion 12A and the lower magnetic pole layer 8 are opposed to each other through the insulating layer 11 is larger than that in the case where the magnetic layer is flat. Therefore, it is possible to prevent the recording characteristics from being deteriorated.

  Next, a method for manufacturing the thin film magnetic head 20 will be described with reference to FIGS. 23 to 35 in addition to FIGS. Here, FIG. 23 to FIG. 35 are cross-sectional views for explaining each step in the method of manufacturing the thin film magnetic head 20.

  First, as shown in FIG. 23, the insulating layer 2 is formed on the substrate 1 by, for example, sputtering. Next, the lower shield layer 3 is formed on the insulating layer 2 by, for example, sputtering or plating. Next, a part of the insulating layer 4 is formed on the lower shield layer 3 by sputtering, for example. Next, the MR element 5 is formed on a part of the insulating layer 4 by sputtering, for example. Next, a pair of electrode layers (not shown) electrically connected to the MR element 5 is formed on a part of the insulating layer 4 by, for example, sputtering. Next, the remaining part of the insulating layer 4 is formed on a part of the insulating layer 4, the MR element 5 and the electrode layer by, for example, sputtering. Each layer constituting the reproducing head can be patterned by a general etching method using a patterned resist layer, a lift-off method, or a method using a combination thereof. Subsequently, the upper shield layer 6 is formed on the insulating layer 4 by, for example, a sputtering method or a plating method. Further, after the nonmagnetic layer 7 is formed on the upper shield layer 6 by, for example, a sputtering method, a cobalt iron alloy (CoFe) or a nickel iron alloy (NiFe) is formed on the nonmagnetic layer 7 by, for example, a sputtering method or a plating method. The magnetic film 8Z made of a magnetic material such as cobalt nickel iron alloy (CoNiFe) is formed. After that, a soluble layer 31Z made of aluminum oxide is formed so as to cover the entire magnetic film 8Z.

  After forming the fusible layer 31Z, the two-layer resist pattern 32 is formed only in the region (first region R1) that finally becomes the first surface 8A and the region (third region R3) that becomes the third surface 8C. Selectively form. At this time, the two-layer resist pattern 32 is not formed in a region (second region R2) that finally becomes the second surface 8B.

  After forming the two-layer resist pattern 32, the magnetic film 8Z and the soluble layer 31Z in the second region R2 including the region corresponding to the second surface 8B are selectively etched by a dry etching method using this as a mask. (FIG. 24). Here, the magnetic film 8Z is dug within a range of 0.1 μm to 1 μm. Thus, the bottom pole layer 8 having the first surface 8A, the second surface 8B, and the third surface 8C, and the soluble layer pattern 31 provided on the first surface 8A and the third surface 8C, Is formed. The second surface 8B is a surface formed one step lower than the first surface 8A and the third surface 8C.

  Subsequently, as shown in FIG. 25, an insulating film 11Z made of aluminum oxide is formed so as to cover the whole by using, for example, a sputtering method. Thereafter, the two-layer resist pattern 32 is lifted off using a solvent capable of dissolving, and further, the soluble layer pattern 31 is dissolved and removed using a solvent capable of dissolving aluminum oxide, as shown in FIG. The first surface 8A and the third surface 8C of the bottom pole layer 8 appear, and the insulating layer 11 covering the second region R2 appears.

  Here, since the step D1 is not less than 0.1 μm and not more than 1 μm, the etching amount is large and the etching time is long, so that the lower magnetic pole layer 8 and its peripheral portion are relatively high in temperature. Furthermore, heat is applied to the lower magnetic pole layer 8 and its peripheral part also by the formation of the insulating film 11Z. For this reason, in the patterning method using the soluble layer made of resin, the soluble layer is altered by heat, and the soluble layer cannot be removed by the solvent. On the other hand, according to the present embodiment, aluminum oxide is used as the soluble layer pattern 31, so that it is not affected by the heat generated when the magnetic film 8Z is etched and when the insulating layer 11 is formed. The soluble layer pattern 31 can be easily separated from the bottom pole layer 8 using a predetermined solvent after etching. At this time, burrs due to the reattachment do not occur on the first surface 8A. Therefore, the lower magnetic pole layer 8 having a step between the first surface 8A and the third surface 8C and the second surface 8B can be easily formed with high accuracy.

  After forming the bottom pole layer 8 and the insulating layer 11, as shown in FIG. 27, the recording gap layer 9 is selectively formed by, for example, sputtering. Next, an electrode film (not shown) is formed on the recording gap layer 9 by sputtering. Thereafter, as shown in FIG. 28, the magnetic pole portion layer 12A is selectively formed so as to include a region covering a part of the upper surface of the insulating layer 11 from the ABS 61A. At the same time, an electrode film (not shown) and a coupling portion layer 12B are formed in a region to be the contact hole 9A on the third surface 8C, and a connection layer 13 is formed on the connection portion 10A. The magnetic pole partial layer 12A, the coupling partial layer 12B, and the connection layer 13 are formed by frame plating using the above electrode film, for example.

  Further, as shown in FIG. 29, after the electrode film and the recording gap layer 9 are removed by ion milling or the like using the magnetic pole portion layer 12A and the coupling portion layer 12B as a mask, as shown in FIG. An insulating layer 14A made of aluminum oxide or the like is formed over the entire surface. As shown in FIG. 20, the structure in which the magnetic pole portion of the upper magnetic pole layer 12, the side walls of at least a part of the magnetic pole portion of the recording gap layer 9 and the lower magnetic pole layer 8 are vertically formed in a self-aligned manner, It is called a trim structure.

  After forming the insulating layer 14A, as shown in FIG. 31, the first layer portion 10 of the thin film coil is formed in a part of the region corresponding to the second region R2 on the insulating layer 14A by using a plating method. . Further, as shown in FIG. 32, after forming an insulating layer 14B made of resist or the like in the gap of the first layer portion 10, etc., as shown in FIG. 33, the entire surface is made of aluminum oxide by sputtering. An insulating layer 14C is formed.

  Next, the insulating layer 14C is polished and planarized by chemical mechanical polishing (CMP) to reach the surfaces of the pole portion layer 12A, the coupling portion layer 12B, and the connection layer 13 (FIG. 34). After planarization, an insulating layer 14D is formed so as to cover at least the upper surface of the first layer portion 10 as shown in FIG. Thereafter, the second layer portion 15 of the thin film coil is formed on the insulating layer 14D, and the insulating layer 16 is further formed so as to cover the second layer portion 15. The insulating layer 16 is formed, for example, by applying a resist so as to cover the second layer portion 15 and curing the resist. Further, the yoke portion layer 12C is formed on the magnetic pole portion layer 12A, the insulating layers 14 and 16, and the coupling portion layer 12B by frame plating, for example. After that, the overcoat layer 17 is formed by sputtering, for example, so as to cover the yoke portion layer 12C and the insulating layer 16. Finally, the slider including the above layers is machined to form the ABS 61A, and then the thin film magnetic head 20 shown in FIG. 19 is completed through a predetermined process.

As described above, according to the method of manufacturing the thin film magnetic head according to the present embodiment, the soluble layer 31Z is formed between the magnetic film 8Z and the resist pattern 32, so that the magnetic film 8Z and the resist pattern 32 are formed. Structures separated from each other by the soluble layer 31Z can be formed. Furthermore, after the magnetic film 8Z and the soluble layer 31Z are selectively etched by dry etching using the resist pattern 32 as a mask to form the lower magnetic pole layer 8 and the soluble layer pattern 31, at least possible using a predetermined solvent. Since the melt layer pattern 31 is removed, the occurrence of mold deformation at the step portion in the thickness direction between the first surface 8A and the second surface 8B in the bottom pole layer 8 is suppressed, and etching is performed more accurately. be able to. In addition, the bottom pole layer 8 and the resist pattern 32 can be easily separated without being affected by heat applied during dry etching and formation of the insulating layer 11. This is because the fusible layer pattern 31 is made of Al ₂ O ₃ excellent in heat resistance and heat dissipation, so that it is not altered by heat applied during the dry etching and formation of the insulating layer 11. This is because seizure between the fusible layer pattern 31 and the bottom pole layer 8 does not occur. Even if the resist pattern 32 is altered by the above heating, the influence on the lower magnetic pole layer 8 can be prevented by being separated by the fusible layer pattern 31. Therefore, the lower magnetic pole layer 8 having the step D1 in the thickness direction between the first surface 8A and the second surface 8B can be easily formed with high accuracy.

Here, a specific example in the third embodiment will be described. In this example, the lower magnetic pole layer is formed using a soluble layer made of aluminum oxide (Al ₂ O ₃ ) based on the method of manufacturing the thin film magnetic head in the third embodiment, and the lower magnetic pole layer is formed. The surface condition was confirmed. The results are shown in Table 1 together with a comparative example in which the lower magnetic pole layer was formed using a soluble layer made of a conventional resin (resist). Note that FeCo was used for the lower magnetic pole layer.

In the column of “Surface condition” in Table 1, in the case of “◯”, formation of redeposits and burrs (hereinafter referred to as redeposits) was not observed on the surface of the bottom pole layer. It shows that. On the other hand, “x” indicates that the formation of a reattachment or the like was finally observed. As is apparent from Table 1, when a soluble layer is formed using a resin (resist) as in the prior art and the lower magnetic pole layer is etched by about 200 nm, re-deposited material on the surface of the lower magnetic pole layer after lift-off Etc. were observed. In contrast, in this example in which the fusible layer was formed using aluminum oxide (Al ₂ O ₃ ), the bottom pole layer was etched about 200 nm and etched about 400 nm after lift-off. There was no occurrence of redeposits on the surface of the bottom pole layer.

  From the above, it has been found that according to the present example, it is possible to form the lower magnetic pole layer having sufficient accuracy without finally leaving the reattachment or the like.

  The present invention has been described above with reference to some embodiments and examples. However, the present invention is not limited to the above embodiments and examples, and various modifications can be made. For example, in the above embodiments and examples, a positive photoresist material is used to form the upper resist layer. However, a negative photoresist material may be used. In the above embodiment, a resist pattern having a two-layer structure is formed. However, a single-layer resist pattern may be used. In that case, it is desirable to use a resin that can simultaneously form an undercut by photolithography.

  In the first and second embodiments described above, the case where the second thin film pattern is formed together with the first thin film pattern has been described. In either case, the first thin film pattern is also described. You may make it form only.

  In the first and second embodiments, the first thin film pattern is entirely etched in the thickness direction. However, the present invention is not limited to this, and the thickness of the first thin film pattern. This includes a case where a part of the direction is etched to form a stepped part or a recessed part.

  The patterning method of the present invention can be suitably used not only for the production of thin film magnetic heads but also for forming various thin film patterns included in other electronic / magnetic devices such as semiconductor devices. For example, the present invention can be applied to formation of wiring patterns in micromachines and pattern formation of thin-film magnetic memory elements in nonvolatile magnetoresistive memory (MRAM).

It is the top view and sectional drawing showing the thin film pattern formed by the formation method of the thin film pattern which concerns on the 1st Embodiment of this invention. It is sectional drawing showing 1 process in the method of forming the thin film pattern shown in FIG. FIG. 3 is a cross-sectional view illustrating a process following FIG. 2. FIG. 4 is a plan view and a cross-sectional view illustrating a process following FIG. 3. FIG. 5 is a cross-sectional view illustrating a process following FIG. 4. FIG. 6 is a cross-sectional view illustrating a process following FIG. 5. FIG. 7 is a cross-sectional view illustrating a process following FIG. 6. FIG. 8 is a cross-sectional view illustrating a process following FIG. 7. It is the top view and sectional drawing showing the thin film pattern formed by the formation method of the thin film pattern which concerns on the 2nd Embodiment of this invention. It is sectional drawing showing 1 process in the method of forming the thin film pattern shown in FIG. It is sectional drawing showing the 1 process following FIG. FIG. 12 is a plan view and a cross-sectional view illustrating a process following FIG. 11. FIG. 13 is a cross-sectional view illustrating a process following FIG. 12. FIG. 14 is a cross-sectional view illustrating a process following FIG. 13. FIG. 15 is a cross-sectional view illustrating a process following FIG. 14. FIG. 16 is a cross-sectional view illustrating a process following FIG. 15. It is a perspective view showing schematic structure of the magnetic disc apparatus carrying the thin film magnetic head produced by the manufacturing method of the thin film magnetic head based on the 3rd Embodiment of this invention. FIG. 18 is a perspective view illustrating a configuration of a slider in the magnetic disk device illustrated in FIG. 17. FIG. 19 is a cross-sectional view illustrating a configuration of a cross section perpendicular to ABS in the thin film magnetic head illustrated in FIG. 18. It is sectional drawing showing the structure of a cross section parallel to ABS in the thin film magnetic head shown in FIG. It is the expanded sectional view which expanded and showed the principal part of the thin film magnetic head shown in FIG. FIG. 19 is a plan view showing a magnetic pole partial layer of an upper magnetic pole layer in the thin film magnetic head shown in FIG. 18. It is sectional drawing showing 1 process in the manufacturing method of the thin film magnetic head which concerns on the 3rd Embodiment of this invention. FIG. 24 is a cross-sectional view illustrating a process following FIG. 23. FIG. 25 is a cross-sectional view illustrating a process following FIG. 24. FIG. 26 is a cross-sectional view illustrating a process following FIG. 25. FIG. 27 is a cross-sectional view illustrating a process following FIG. 26. FIG. 28 is a cross-sectional view illustrating a process following FIG. 27. FIG. 29 is a cross-sectional view illustrating a process following FIG. 28. FIG. 30 is a cross-sectional view illustrating a process following FIG. 29. FIG. 31 is a cross-sectional view illustrating a process following FIG. 30. FIG. 32 is a cross-sectional view illustrating a process following FIG. 31. FIG. 33 is a cross-sectional view illustrating a process following FIG. 32. FIG. 34 is a cross-sectional view illustrating a process following FIG. 33. FIG. 35 is a cross-sectional view illustrating a process following FIG. 34.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Board | substrate, 2 ... Insulating layer, 3 ... Lower shield layer, 4 ... Insulating layer, 5 ... MR element, 6 ... Upper shield layer, 7 ... Nonmagnetic layer, 8 ... Lower magnetic pole layer, 8A ... 1st surface, 8B ... second surface, 8C ... third surface, 9 ... recording gap layer, 10 ... first layer portion, 11 ... insulating layer, 12 ... upper magnetic pole layer, 12A ... magnetic pole portion layer, 12AA ... first surface , 12AB ... second surface, 12B ... coupling portion layer, 12C ... yoke portion layer, 13 ... connection layer, 14 (14A-14D) ... insulating layer, 15 ... second layer portion, 16 ... insulating layer, 17 ... over Coat layer, 20 ... Thin film magnetic head, 51 ... Housing, 52 ... Magnetic disk, 53 ... Head arm assembly (HAA), 54 ... Head gimbal assembly (HGA), 55 ... Arm, 56 ... Drive unit, 57 ... Fixed shaft 58 ... bearings, 59 ... spindle motor, 61 ... , 61A: Recording medium facing surface (ABS), 100, 200 ... Thin film pattern, 101, 201 ... Substrate, 102 ... Soluble layer pattern, 102Z, 202Z ... Soluble layer, 105, 205 ... Two-layer resist pattern, 111 , 121 ... first thin film pattern, 111Z, 121Z ... first thin film, 111T ... end, 122 ... second thin film pattern, 122Z ... second thin film,.

Claims (7)

Forming a first thin film on a substrate;
Forming a soluble layer made of aluminum oxide on the first thin film;
Selectively forming a resist pattern on the soluble layer;
Etching all or part of the first thin film and the soluble layer in the thickness direction in a region other than the region covered by the resist pattern using a dry etching method using the resist pattern as a mask, Forming a thin film pattern and a soluble layer pattern;
A step of dissolving and removing the resist pattern using a first solvent capable of dissolving the constituent material of the resist pattern;
And a step of dissolving and removing the soluble layer pattern by using a second solvent capable of dissolving aluminum oxide. Forming a second thin film so as to cover the resist pattern and the region where the first thin film and the soluble layer are etched;
The method for forming a thin film pattern according to claim 1, wherein the second thin film pattern is formed by removing at least the soluble layer pattern using the solvent. Furthermore, the process of forming an undercut in the said resist pattern is included. The formation method of the thin film pattern of Claim 1 or Claim 2 characterized by the above-mentioned. The island-shaped or strip-shaped isolated resist pattern is formed, and the isolated first thin film pattern and soluble layer pattern having the same shape as the isolated resist pattern are formed. The method for forming a thin film pattern according to any one of claims 1 to 3. The opening-type resist pattern having an opening is formed, and the opening-type first thin film pattern and fusible layer pattern having the same shape as the opening-type resist pattern are formed. Item 4. The method for forming a thin film pattern according to any one of Items 3 to 3. A thin film coil that generates a magnetic flux when supplied with an electric current, and an upper magnetic pole that has a medium facing surface that faces the magnetic recording medium and is configured to emit the magnetic flux generated by the thin film coil toward the magnetic recording medium And a tip portion where the thin-film coil is sandwiched with the upper magnetic pole layer via an insulating layer, and a magnetic flux emitted from the upper magnetic pole layer and magnetizing the magnetic recording medium flows in. A method of manufacturing a thin film magnetic head comprising a lower magnetic pole layer comprising:
Forming a magnetic film on the substrate;
Forming a soluble layer made of aluminum oxide on the magnetic film;
Selectively forming a resist pattern in a first region on the soluble layer corresponding to a portion of the magnetic film where the tip portion is to be formed;
Using the dry etching method with the resist pattern as a mask, all of the thickness direction of the soluble layer in the second region other than the first region and part of the thickness direction of the magnetic film in the second region Etching to form a fusible layer pattern and the lower magnetic pole layer having a step in the thickness direction between the first region and the second region;
A step of dissolving and removing the resist pattern using a first solvent capable of dissolving the constituent material of the resist pattern;
And a step of dissolving and removing the soluble layer pattern using a second solvent capable of dissolving aluminum oxide. The lower magnetic pole layer is made of a metal including at least one of cobalt iron alloy (CoFe), nickel iron alloy (NiFe), and cobalt nickel iron alloy (CoNiFe). A manufacturing method of the thin film magnetic head described.

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