JP2006195126A - Method for manufacturing halftone phase shift mask - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing halftone phase shift mask approximating the dimensional accuracy of a phase shift layer pattern of a halftone phase shift mask which has a light shielding part partially formed in a light semi-transmitting part to design dimension and capable of manufacturing a non-defective article without depending on a technique of correcting a defect itself. <P>SOLUTION: The method for manufacturing halftone phase shift mask is composed of the following processes: (1) laminating a phase shift layer, a thin film metal layer and a first resist layer; (2), (3), (4) forming a first resist layer pattern, a thin film metal layer first pattern 8b and a phase shift layer pattern 3b, respectively; (5) peeling the first resist layer pattern; processes (6), (7), (8), (9) forming a light shielding layer 9a on the whole surface other than an alignment mark light transmission part, a second resist layer 6a, a second resist layer pattern 6b, and a light shielding layer pattern 9b and a thin film metal layer second pattern 8c, respectively; and peeling the second resist layer pattern 6b. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a halftone phase shift mask used in an exposure apparatus such as a stepper during the manufacture of a semiconductor integrated circuit, and in particular, to improve the dimensional accuracy of a phase shift layer pattern constituting the halftone phase shift mask. Further, the present invention relates to a method for manufacturing a halftone phase shift mask capable of increasing the optical density of a light shielding layer.

  The planar configuration of a halftone type phase shift mask is usually composed of a light transmission part and a light semi-transmission part (phase shift part) surrounding the light transmission part, but the light semi-transmission part (phase shift part). A half-tone type phase shift mask comprising a light transmission part, a light semi-transmission part (phase shift part), and a light shielding part is also used.

For example, as disclosed in Japanese Patent Application Laid-Open No. 8-334485, a halftone phase shift mask having a structure in which a light shielding portion is provided on a light semi-transmissive portion in the outer peripheral portion of the main pattern effective region has been proposed. When a pattern is transferred by a stepper to a resist provided on the surface of a silicon wafer using such a halftone phase shift mask, the resist is exposed by multiple exposure to portions that should not be exposed to the resist. Photosensitivity can be prevented.
Further, for example, as disclosed in JP-A-8-292550 and JP-A-8-334886, a halftone phase comprising a light transmission part, a light semi-transmission part (phase shift part), and a light-shielding part. A halftone phase shift mask having a structure in which a light shielding part is partially provided in a main pattern of a light semi-transmissive part is also used.

Such a halftone type phase shift mask composed of a light transmission part, a light semi-transmission part (phase shift part), and a light shielding part is called a tritone mask.
FIG. 1 is a partial cross-sectional view showing an example of a tritone mask. As shown in FIG. 1, this tritone mask has a light transmission part (2) on a transparent substrate (1), a light semi-transmission part (phase shift part) (3) around it, and a light semi-transmission part (phase). A light shielding portion (4) is formed surrounding the shift portion (3).
In FIG. 1, an alignment mark light transmitting portion (7) is formed in the region of the light shielding portion (4) at the left end of the tritone mask.

This tritone mask has the following characteristics compared to a normal halftone phase shift mask composed of a light transmission part and a light semi-transmission part (phase shift part) surrounding the light transmission part. Yes.
That is, in the case of a normal halftone phase shift mask composed of a light transmission part and a light semi-transmission part (phase shift part), for example, when the light transmission part has a large area, the transfer corresponding to the light transmission part The problem that ghosts and the like occur in an image is that the occurrence of such a tritone mask can be prevented.
In addition, for example, when the light semi-transmission part (phase shift part) surrounding the light transmission part becomes a large area, the transfer image obtained becomes unclear due to the exposure light that has passed through the light transmission part. In the tone mask, the occurrence can be prevented.

2 (a) to 2 (e) and FIGS. 3 (a) to 3 (c) are cross-sectional views illustrating an example of a method for manufacturing the tritone mask shown in FIG.
As shown in FIG. 2A, first, for example, an electron beam resist is formed on the light shielding layer (4a) of the transparent substrate (1) on which the phase shift layer (3a) and the light shielding layer (4a) are sequentially laminated. The first resist layer (5a) used is laminated. Next, as shown in FIGS. 2B to 2C, drawing using an electron beam exposure apparatus and development processing are performed, and the portion corresponding to the light transmission portion (2) shown in FIG. A first resist layer pattern (5b) having a shape in which a portion corresponding to the mark light transmission portion (7) is missing is formed.

  Next, as shown in FIG. 2D, the light-shielding layer (4a) is etched using the first resist layer pattern (5b) as a mask, so that the light transmission part (2) and the alignment mark light transmission part (7). The light shielding layer first pattern (4b) having a shape in which a portion corresponding to () is missing is formed.

Next, as shown in FIG. 2 (e), the phase shift layer (3a) is etched using the first resist layer pattern (5b) and the light shielding layer first pattern (4b) as a mask, and the light transmitting portion (2) and a phase shift layer pattern (3b) having a shape lacking a portion corresponding to the alignment mark light transmitting portion (7) are formed.
Subsequently, the first resist layer pattern (5b) is peeled off.

  Next, as shown in FIG. 3 (a), the second resist layer (6a) is formed on the entire surface of the transparent substrate (1) on which the light shielding layer first pattern (4b) and the phase shift layer pattern (3b) are formed. For example, drawing is performed using an electron beam exposure apparatus, followed by development processing, and as shown in FIG. 3B, the light transmission part (2) and the light semi-transmission part shown in FIG. (Phase shift part) The 2nd resist layer pattern (6b) of the shape lacking the part corresponding to (3) is formed.

Next, as shown in FIG. 3 (c), the light-shielding layer first pattern (4b) is etched using the second resist layer pattern (6b) as a mask, and the light transmitting portion (2) and alignment mark light are etched. The light shielding layer second pattern (4c) having a shape in which a portion corresponding to the transmissive portion (7) and the light semi-transmissive portion (phase shift portion) (3) is omitted is formed.
Subsequently, the second resist layer pattern (6b) is peeled off to obtain a tritone mask shown in FIG.

As a material used for the light shielding layer (4a), chromium (Cr) is widely used. The thickness of chromium when chromium is used for the light shielding layer is determined by the total optical density of the phase shift layer and the chromium layer. In general, the optical density of the light-shielding portion required at the time of transfer is 3 to 3.5. When the optical density of the phase shift layer is 1.2, the chromium layer satisfies the optical density of about 1.8 to 2.3. About a certain thickness is required. In order to prevent exposure by reflected light during transfer, it is necessary to form a low reflection layer such as chromium oxide on the chromium layer, so that the chromium layer is usually a two-layer film.
In order to satisfy this, the chromium layer needs to have a thickness of about 40 to 50 nm or more.
As a material used for the phase shift layer (3a), a molybdenum silicide compound, for example, molybdenum oxynitride silicide (MoSiOxNy) is widely used. When molybdenum oxynitride silicide is used for the phase shift layer, the required thickness of the molybdenum oxynitride silicide phase shift layer is determined by the wavelength and transmittance of light. When the wavelength is ArF and the transmittance is 6%, the thickness is about 70 nm.

Comparing the pattern dimensional accuracy of a molybdenum oxynitride silicide layer formed using a pattern formed by etching a light shielding layer of chromium as a mask and the pattern dimensional accuracy of a molybdenum oxynitride silicide layer formed without using chromium as a mask, When the pattern formed by etching the light shielding layer is used as a mask, the dimensional accuracy of the pattern is lower.
This is due to the loading effect during the etching of the chrome layer. This effect is greater as the chrome layer is thicker, but by reducing the chrome layer thickness to some extent, this effect should be avoided. Can do. However, if the chrome layer is made thin, there is a problem that the optical density necessary for light shielding becomes insufficient, and the chrome layer cannot be made thin enough to satisfy the optical density and not be affected by the loading effect.

Therefore, as described above, when the phase shift layer (3a) using molybdenum oxynitride silicide is formed into the phase shift layer pattern (3b) by etching, a pattern using chromium having a thickness that secures optical density. When the phase shift layer (3a) using molybdenum oxynitride silicide is etched using the light shielding layer first pattern (4b) having low dimensional accuracy as a mask, the obtained phase shift layer pattern (3b) also has low dimensional accuracy. End up.
Japanese Unexamined Patent Publication No. 8-334485 JP-A-8-292550 JP-A-8-334886

Claims 1 to 3 of the present invention are made in order to solve the above-mentioned problem, and the phase shift of a halftone phase shift mask having a structure in which a light-shielding portion is partially provided in a light semi-transmissive portion. Production of a halftone phase shift mask that increases the dimensional accuracy by thinning the metal thin film layer used as a mask when forming the layer pattern, eliminating the loading effect during etching, and ensuring sufficient optical density of the light shielding part It is an object to provide a method.
Further, according to claim 4 of the present invention, when a defect occurs in the light-shielding portion of the halftone phase shift mask manufactured by the method of manufacturing the halftone phase shift mask, regardless of a method of correcting the defect itself, It is an object of the present invention to provide a method for manufacturing a halftone phase shift mask for manufacturing non-defective products.

  According to a first aspect of the present invention, there is provided a halftone phase shift mask comprising a light transmission part on a transparent substrate, a light semi-transmission part (phase shift part) partially provided with a light shielding part, and a light shielding part. In the manufacturing method, a halftone type is characterized in that after forming a phase shift pattern using a conductive metal film as a mask, a light shielding metal film is laminated to form a light shielding pattern. It is a manufacturing method of a phase shift mask.

According to a second aspect of the present invention, in the method of manufacturing a halftone phase shift mask according to the first aspect,
(1) a step of laminating a first resist layer on a thin film metal layer of a transparent substrate in which a phase shift layer and a thin film metal layer are sequentially laminated;
(2) Patterning the first resist layer into a predetermined shape to form a first resist layer pattern having a shape in which portions corresponding to the light transmission part (main pattern light transmission part) and the alignment mark light transmission part are missing. When,
(3) The thin film metal layer 1 having a shape in which a portion corresponding to the light transmission portion (main pattern light transmission portion) and the alignment mark light transmission portion is omitted by etching the thin film metal layer using the first resist layer pattern as a mask. Forming a pattern;
(4) The phase shift layer was etched using the first resist layer pattern and the thin metal layer first pattern as a mask, and the portions corresponding to the light transmission part (main pattern light transmission part) and the alignment mark light transmission part were missing. Forming a phase shift layer pattern having a shape;
(5) peeling the first resist layer pattern;
(6) forming a light shielding layer on the entire surface other than the alignment mark light transmitting portion on the transparent substrate on which the first thin film metal layer pattern and the phase shift layer pattern are formed;
(7) a step of laminating a second resist layer on the entire surface of the transparent substrate on which the light shielding layer is formed;
(8) The second resist layer pattern in which the second resist layer is patterned into a predetermined shape, and the portions corresponding to the light transmission part (main pattern light transmission part) and the light semi-transmission part (phase shift part) are missing. Forming a step;
(9) The light-shielding layer and the thin-film metal layer first pattern are etched using the second resist layer pattern as a mask, and a light transmission part (main pattern light transmission part), an alignment mark light transmission part, and a light semi-transmission part (phase) Forming a light-shielding layer pattern and a thin-film metal layer second pattern in a shape lacking a portion corresponding to the shift portion), and peeling the second resist layer pattern,
A method for producing a halftone phase shift mask, comprising:

  According to a third aspect of the present invention, in the method of manufacturing a halftone phase shift mask according to the first or second aspect, the thickness of the first pattern of the thin film metal layer is a charge-up during electron beam drawing. 3. The thickness according to claim 1, wherein the optical density combined with the phase shift layer has a thickness that does not satisfy an optical density necessary for shielding exposure light. It is a manufacturing method of the halftone type phase shift mask of description.

According to a fourth aspect of the present invention, in the halftone phase shift mask produced by the production method according to the first to third aspects of the present invention, when the light-shielding film pattern already produced has a defect,
(1) a step of peeling a part including at least a portion where a defect exists in the light shielding layer pattern and the thin film metal layer second pattern of the already produced halftone phase shift mask;
(2) forming a light shielding layer on the entire surface of the transparent substrate other than the alignment mark light transmitting portion on the transparent substrate in which the already formed phase shift layer pattern remains;
(3) laminating a second resist layer on the entire surface of the transparent substrate on which the light shielding layer is formed;
(4) The second resist layer pattern having a shape in which the second resist layer is patterned into a predetermined shape, and portions corresponding to the light transmission part (main pattern light transmission part) and the light semitransmission part (phase shift part) are missing. Forming a step;
(5) A portion corresponding to a light transmission part (main pattern light transmission part), an alignment mark light transmission part, and a light semi-transmission part (phase shift part) by etching the light shielding layer using the second resist layer pattern as a mask Forming a light-shielding layer pattern having a shape lacking, and peeling the second resist layer pattern,
A method for producing a halftone phase shift mask, comprising:

The present invention uses a blank having a structure in which a phase shift layer, a thin film metal layer, and a resist are laminated on a transparent substrate, and a light shielding layer necessary for transfer is laminated after the phase shift pattern is formed. The layer is not formed as a mask. The thin metal layer is for preventing charge-up at the time of drawing with an electron beam, and does not require light shielding properties. Therefore, the thin metal layer can be made thick enough not to be affected by the loading effect during etching.
Therefore, a phase shift pattern with high dimensional accuracy can be obtained by the method for manufacturing a halftone phase shift mask of the present invention.

  According to claim 4 of the present invention, when there is a defect in the light shielding film pattern of the halftone phase shift mask created by the method of the present invention, the light shielding layer is recreated without correcting the defect itself. Good products can be created without wasting materials and man-hours.

The present invention will be described below based on one embodiment.
4 (a) to 4 (e) and FIGS. 5 (a) to 5 (e) are explanatory views showing, in partial cross section, one embodiment of a method for manufacturing a halftone phase shift mask according to the present invention.
As shown in FIG. 4A, first, on the thin film metal layer (8a) of the transparent substrate (1) on which the phase shift layer (3a) and the thin film metal layer (8a) are sequentially laminated, for example, an electron beam A first resist layer (5a) using a resist is laminated.
The phase shift layer (3a) and the thin film metal layer (8a) are formed by vacuum deposition or sputtering. The first resist layer (5a) is formed using a spin coater. At this time, blanks in which an electron beam resist is previously laminated may be used.

As the material of the phase shift layer (3a), a molybdenum silicide compound, for example, molybdenum oxynitride silicide (MoSiOxNy) is used. Its thickness is
It depends on the wavelength and transmittance used for transfer.
As a material of the thin film metal layer (8a), for example, chromium is used. The thickness may be a thickness having conductivity sufficient to avoid a charge-up phenomenon. In order to provide a light-shielding property, if the thickness satisfies an optical density of 3 or more, the pattern formation accuracy is lowered due to the loading effect generated during the etching of chromium. It is known that the loading effect during the etching of chromium is less affected when the chromium film thickness is reduced. When the exposure light is ArF and the transmittance is 6%, the optical density of the phase shift layer is 1.22. In order to make the optical density about 2 by combining the phase shift layer and the chromium layer, the low reflection film In combination with chromium oxide, a thickness of 40 nm or more is generally required. With this thickness, the dimensional accuracy of the pattern decreases due to the effect of the loading effect. However, if the chromium layer is thinned to an optical density of 3 or less, the influence of the loading effect is reduced, so that a pattern with high dimensional accuracy can be obtained.

  Next, as shown in FIGS. 4B to 4C, drawing and development processing using an electron beam exposure apparatus is performed, and a light transmission portion (main pattern light transmission portion) shown in FIG. (2) and a first resist layer pattern (5b) having a shape lacking a portion corresponding to the alignment mark light transmitting portion (7) is formed.

  Next, as shown in FIG. 4D, the thin film metal layer (8a) is etched using the first resist layer pattern (5b) as a mask, so that the light transmission part (main pattern light transmission part) (2) And the thin film metal layer 1st pattern (8b) of the shape lacking the part corresponding to the alignment mark light transmission part (7) is formed. Since the thickness of the thin film metal layer first pattern (8b) is a thickness that does not affect the loading effect of optical density 3 or less, the dimensional accuracy of the obtained thin film metal layer first pattern (8b) is high.

Next, as shown in FIG. 4E, the phase shift layer (3a) is etched using the first resist layer pattern (5b) and the thin film metal layer first pattern (8b) as a mask, and the light transmission is performed. A phase shift layer pattern (3b) having a shape in which portions corresponding to the portion (main pattern light transmitting portion) (2) and the alignment mark light transmitting portion (7) are missing is formed. Since the dimensional accuracy of the thin film metal layer first pattern (8b) used here as the mask is high, the dimensional accuracy of the phase shift layer pattern (3b) obtained by etching is high.
Subsequently, the first resist layer pattern (5b) is peeled off.

Next, as shown to Fig.5 (a), a light shielding layer (9a) is formed on the transparent substrate (1) in which the thin film metal layer 1st pattern (8b) and the phase shift layer pattern (3b) were formed. This light shielding layer (9a) is an original light shielding layer in the tritone mask.
As the material of the first thin film metal layer pattern (8b) in the present invention, for example, chrome is used. This is mainly a phase shift layer with high dimensional accuracy while avoiding a charge-up phenomenon during drawing. Since it is for forming the pattern (3b) and has an optical density of 3 or less, the original performance as a light shielding layer is insufficient.

  The light shielding layer (9a) is formed in a portion other than the portion corresponding to the alignment mark light transmitting portion (7) of the halftone phase shift mask. The light shielding layer (9a) is formed by a vacuum deposition method or a sputtering method. As a method for forming the light shielding layer other than the portion corresponding to the alignment mark light transmitting portion (7), for example, masking at the time of film formation is performed. Even if the light shielding layer (9a) is thick enough to satisfy the optical density required for transfer, the pattern accuracy of the phase shift layer is not affected.

  Next, as shown in FIG. 5 (b), the entire surface of the transparent substrate (1) on which the thin film metal layer first pattern (8b) and the phase shift layer pattern (3b) are formed and the light shielding layer (9a) is provided. A second resist layer (6a) is laminated on the substrate, and, for example, drawing using an electron beam exposure apparatus is performed, followed by development processing, as shown in FIG. 5 (c), as shown in FIG. 5 (e). Then, the second resist layer pattern (6b) having a shape in which portions corresponding to the light transmission part (main pattern light transmission part) (2) and the light semi-transmission part (phase shift part) (3) are omitted is formed.

Next, as shown in FIG. 5 (d), the light-shielding layer (9a) and the thin-film metal layer first pattern (8b) are etched using the second resist layer pattern (6b) as a mask, so that the light transmission part (main Pattern light transmissive portion (2), alignment mark light transmissive portion (7), and light semi-transmissive portion (phase shift portion) (3). A second pattern (8c) is formed.
Subsequently, the second resist layer pattern (6b) is peeled off to obtain a halftone phase shift mask according to the present invention shown in FIG.

As described above, in the method of manufacturing a halftone phase shift mask according to the present invention, a thin film metal having an optical density of 3 or less, for example, a chromium thin film metal is used as a material for the thin film metal layer (8a), and low reflection is achieved. Since it is not necessary to form a film, the dimensional accuracy does not deteriorate due to the effect of the loading effect during etching. Therefore, the dimensional accuracy of the obtained thin-film metal layer first pattern (8b) is higher than that of the thick light-shielding layer first pattern Is also expensive.
Accordingly, the dimensional accuracy of the phase shift layer pattern (3b) obtained by etching using the thin metal layer first pattern (8b) with high dimensional accuracy as a mask is high.
In addition, since the metal thin film layer that satisfies the optical density of 3 or more and has a low reflection film is formed after the phase shift layer pattern is formed, it is possible to form a light-shielding layer having performance required for transfer.

  In the invention according to claim 4, when a defect occurs in the light-shielding portion of the already manufactured halftone phase shift mask, the light-shielding layer pattern (9b) is temporarily used regardless of the method of directly correcting the defect itself. The thin film metal layer second pattern (8c) is peeled off from the transparent substrate (1), a light shielding layer is formed again and patterned as a light shielding layer pattern (9b '), and the light shielding part has no defects in a halftone phase shift. This is a method for manufacturing a halftone phase shift mask for manufacturing a mask.

  The defect of the light shielding part is a black defect or a lack of the light shielding layer pattern. The black defect in the light shielding layer pattern is a black defect generated when the light shielding layer pattern (9b) is formed. For example, the black defect in the state in which the light shielding layer pattern (9b) is partially extended and projected in the plane direction. is there. This is due to, for example, adhesion of foreign matters, resist residue during development, and the like when forming the light shielding layer pattern (9b).

Further, the omission of the light shielding layer pattern is a pinhole, disconnection, pattern omission, etc., and is caused by, for example, resist peeling during development.
In particular, if the omission of the light shielding layer pattern is a wide range of about 2 μm, for example, it cannot be corrected by an existing correction device. The mold phase shift mask is a defective product.

  6 (a) to 6 (e) and FIGS. 7 (a) to 7 (b) are explanatory views showing, in partial cross section, an example of a method for manufacturing a halftone phase shift mask according to the invention of claim 4. The halftone phase shift mask shown in FIG. 6A is a halftone phase shift mask that has already been manufactured, and is a transcription of the halftone phase shift mask shown in FIG.

As shown in FIG. 6 (a), this halftone phase shift mask has a light transmission part (2) on a transparent substrate (1), a light semi-transmission part (phase shift part) (3) around it, A light-shielding portion (4) is formed surrounding the light semi-transmissive portion (phase shift portion) (3). In FIG. 6, an alignment mark light transmitting portion (7) is formed at the left end of the halftone phase shift mask. The alignment mark light transmission part (7) is outside the area of the light shielding part (4).
The phase shift layer pattern (3b) of the halftone phase shift mask is formed with high dimensional accuracy. Moreover, the said defect exists in this light-shielding part (4) (not shown).

First, as shown in FIG. 6B, the light-shielding layer pattern (9b) and the thin-film metal layer second pattern (8c) of the already produced halftone phase shift mask are removed leaving the alignment mark portion. Masking or the like is used as a method for leaving the metal film on the alignment mark.
Next, as shown in FIG. 6 (c), light is shielded in a portion other than the alignment mark light transmitting portion (7) on the transparent substrate (1) where the already formed phase shift layer pattern (3b) remains. Form a layer.
The light shielding layer (9a) is formed by a vacuum deposition method or a sputtering method. As a method of forming the portion other than the portion corresponding to the alignment mark light transmitting portion (7), for example, masking is performed at the time of film formation.

  Next, as shown in FIG. 6 (d), the second resist layer (6a) is laminated on the entire surface of the transparent substrate (1) provided with the light shielding layer (9a), and alignment is performed using the remaining alignment marks. For example, drawing using an electron beam exposure apparatus is performed, followed by development processing. As shown in FIG. 6E, the light transmission portion (main pattern light transmission) shown in FIG. Part) (2) and a semi-transparent part (phase shift part) (3), the second resist layer pattern (6b) having a shape lacking is formed.

Next, as shown in FIG. 7 (a), the light-shielding layer (9a) is etched using the second resist layer pattern (6b) as a mask to obtain a light transmission part (main pattern light transmission part) (2), and A newly formed light shielding layer pattern (9b ') having a shape corresponding to the light semi-transmissive portion (phase shift portion) (3) is formed.
Subsequently, the second resist layer pattern (6b) is peeled off to obtain a halftone phase shift mask according to the present invention shown in FIG. 7 (b).

As described above, in the method of manufacturing a halftone phase shift mask according to the present invention, when a defect such as a black defect or a defect exists in the light shielding layer pattern of the manufactured halftone phase shift mask, the defect itself is directly removed. Without correction, the light shielding layer pattern (9b) and the thin film metal layer second pattern (8c) are once peeled off from the transparent substrate (1), and the production is continued.
Therefore, for example, even a half-tone phase shift mask that has a defect of a light shielding layer pattern in a wide range of about 2 μm, which cannot be corrected by an existing correction device, and has been a defective product in the past is regarded as a non-defective product. It can be repaired and manufactured.

It is a fragmentary sectional view showing an example of a tritone mask. (A)-(e) is explanatory drawing which shows an example of the manufacturing method of the tritone mask shown in FIG. 1 in a cross section. (A)-(c) is explanatory drawing which shows an example of the manufacturing method of the tritone mask shown in FIG. 1 in a cross section. (A)-(e) is explanatory drawing which shows the one Example of the manufacturing method of the halftone type phase shift mask by this invention in a partial cross section. (A)-(e) is explanatory drawing which shows the one Example of the manufacturing method of the halftone type phase shift mask by this invention in a partial cross section. (A)-(e) is explanatory drawing which shows an example of the manufacturing method of the halftone type phase shift mask by the invention concerning Claim 4 in a partial cross section. (A)-(b) is explanatory drawing which shows an example of the manufacturing method of the halftone type phase shift mask by the invention concerning Claim 4 in a partial cross section.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Transparent substrate 2 ... Light transmission part (main pattern light transmission part)
3. Light semi-transmission part (phase shift part)
3a ... phase shift layer 3b ... phase shift layer pattern 4 ... light shielding part 4a ... light shielding layer 4b ... light shielding layer first pattern 4c ... light shielding layer second pattern 5a ... first 1 resist layer 5b ... 1st resist layer pattern 6a ... 2nd resist layer 6b ... 2nd resist layer pattern 7 ... alignment mark light transmission part 8a ... thin film metal layer 8b in this invention. The first thin film metal layer pattern 8c in the present invention The second thin film metal layer pattern 9a in the present invention The light shielding layer 9b in the present invention The light shielding layer pattern 9b 'in the present invention 4 shading layer pattern

Claims (4)

  In a method for manufacturing a halftone phase shift mask comprising a light transmission part on a transparent substrate, a light semi-transmission part (phase shift part) partially provided with a light shielding part, and a light shielding part, it has conductivity. A method of manufacturing a halftone phase shift mask, comprising: forming a pattern of a phase shift portion using a metal film as a mask; and then laminating a metal film having a light shielding property to form a pattern of the light shielding portion. In the manufacturing method of the halftone type phase shift mask according to claim 1,
(1) a step of laminating a first resist layer on a thin film metal layer of a transparent substrate in which a phase shift layer and a thin film metal layer are sequentially laminated;
(2) Patterning the first resist layer into a predetermined shape to form a first resist layer pattern having a shape in which portions corresponding to the light transmission part (main pattern light transmission part) and the alignment mark light transmission part are missing. When,
(3) The thin film metal layer 1 having a shape in which a portion corresponding to the light transmission portion (main pattern light transmission portion) and the alignment mark light transmission portion is omitted by etching the thin film metal layer using the first resist layer pattern as a mask. Forming a pattern;
(4) The phase shift layer was etched using the first resist layer pattern and the thin metal layer first pattern as a mask, and the portions corresponding to the light transmission part (main pattern light transmission part) and the alignment mark light transmission part were missing. Forming a phase shift layer pattern having a shape;
(5) peeling the first resist layer pattern;
(6) forming a light shielding layer on the entire surface other than the alignment mark light transmitting portion on the transparent substrate on which the first thin film metal layer pattern and the phase shift layer pattern are formed;
(7) a step of laminating a second resist layer on the entire surface of the transparent substrate on which the light shielding layer is formed;
(8) The second resist layer pattern in which the second resist layer is patterned into a predetermined shape, and the portions corresponding to the light transmission part (main pattern light transmission part) and the light semi-transmission part (phase shift part) are missing. Forming a step;
(9) The light-shielding layer and the thin-film metal layer first pattern are etched using the second resist layer pattern as a mask, and a light transmission part (main pattern light transmission part), an alignment mark light transmission part, and a light semi-transmission part (phase) Forming a light-shielding layer pattern and a thin-film metal layer second pattern in a shape lacking a portion corresponding to the shift portion), and peeling the second resist layer pattern,
A method for manufacturing a halftone phase shift mask, comprising:   3. The method of manufacturing a halftone phase shift mask according to claim 1 or 2, wherein the thickness of the first pattern of the thin film metal layer has conductivity to prevent a charge-up phenomenon at the time of electron beam drawing, and a phase. A method for producing a halftone phase shift mask, characterized in that the optical density combined with the shift layer is a thickness that does not satisfy the optical density necessary for shielding exposure light. In a halftone phase shift mask manufacturing method comprising a light transmission part on a transparent substrate, a light semi-transmission part (phase shift part) provided with a light-shielding part, and a light-shielding part, When there is a defect in the shading film pattern of the tone type phase shift mask,
(1) a step of peeling a part including at least a portion where a defect exists in the light shielding layer pattern and the thin film metal layer second pattern of the already produced halftone phase shift mask;
(2) forming a light shielding layer on the entire surface of the transparent substrate other than the alignment mark light transmitting portion on the transparent substrate in which the already formed phase shift layer pattern remains;
(3) laminating a second resist layer on the entire surface of the transparent substrate on which the light shielding layer is formed;
(4) The second resist layer pattern having a shape in which the second resist layer is patterned into a predetermined shape, and portions corresponding to the light transmission part (main pattern light transmission part) and the light semitransmission part (phase shift part) are missing. Forming a step;
(5) A portion corresponding to a light transmission part (main pattern light transmission part), an alignment mark light transmission part, and a light semi-transmission part (phase shift part) by etching the light shielding layer using the second resist layer pattern as a mask Forming a light-shielding layer pattern having a shape lacking, and peeling the second resist layer pattern,
A method for manufacturing a halftone phase shift mask, comprising:

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