JP2006186278A - Bonding structure, actuator, and liquid injection head - Google Patents

Bonding structure, actuator, and liquid injection head Download PDF

Info

Publication number
JP2006186278A
JP2006186278A JP2004381327A JP2004381327A JP2006186278A JP 2006186278 A JP2006186278 A JP 2006186278A JP 2004381327 A JP2004381327 A JP 2004381327A JP 2004381327 A JP2004381327 A JP 2004381327A JP 2006186278 A JP2006186278 A JP 2006186278A
Authority
JP
Japan
Prior art keywords
bonding
pitch
wire
bonding wire
dimension
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004381327A
Other languages
Japanese (ja)
Inventor
Kenichi Kitamura
健一 北村
Yoshinao Miyata
佳直 宮田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2004381327A priority Critical patent/JP2006186278A/en
Publication of JP2006186278A publication Critical patent/JP2006186278A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]

Abstract

<P>PROBLEM TO BE SOLVED: To specify the arrangement condition of the pitch P of optimum bonding parts permitting the densification of the wiring of a device using a bonding wire. <P>SOLUTION: When a capillary with an outside diameter D is used to connect a bonding wire to a bonding pad as a bonding part of a stitch width A with a variation in the execution of the capillary expressed as C, the pitch P of the bonding part is made larger than (D/2+A/2+C). <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、ボンディングパッドに接続されるボンディングワイヤのボンディング構造に関し、振動板と圧電素子とを備えたアクチュエータ装置への適用、特に、インク滴を吐出するノズル開口と連通する圧力発生室の一部を振動板で構成し、この振動板の表面に圧電素子を形成して、圧電体層の変位によりインク滴を吐出させる液体噴射ヘッドに適用して好適なものである。   The present invention relates to a bonding structure of a bonding wire connected to a bonding pad, and is applied to an actuator device provided with a diaphragm and a piezoelectric element, in particular, a part of a pressure generation chamber communicating with a nozzle opening for discharging ink droplets. Is configured by a diaphragm, and a piezoelectric element is formed on the surface of the diaphragm, and is suitable for application to a liquid ejecting head that ejects ink droplets by displacement of a piezoelectric layer.

電圧を印加することにより変位する圧電素子を具備するアクチュエータ装置は、例えば、液滴を噴射する液体噴射ヘッド等に搭載される。このような液体噴射ヘッドとしては、例えば、ノズル開口と連通する圧力発生室の一部を振動板で構成し、この振動板を圧電素子により変形させて圧力発生室のインクを加圧してノズル開口からインク滴を吐出させるインクジェット式記録ヘッドが知られている。そして、インクジェット式記録ヘッドには、圧電素子の軸方向に伸長、収縮する縦振動モードの圧電アクチュエータ装置を搭載したものと、たわみ振動モードの圧電アクチュエータ装置を搭載したものの２種類が実用化されている。   An actuator device including a piezoelectric element that is displaced by applying a voltage is mounted on, for example, a liquid ejecting head that ejects droplets. As such a liquid ejecting head, for example, a part of a pressure generation chamber communicating with a nozzle opening is configured by a vibration plate, and the vibration plate is deformed by a piezoelectric element so as to pressurize ink in the pressure generation chamber to form a nozzle opening. Inkjet recording heads that discharge ink droplets are known. Two types of ink jet recording heads have been put into practical use: those equipped with a piezoelectric actuator device in a longitudinal vibration mode that extends and contracts in the axial direction of the piezoelectric element, and those equipped with a piezoelectric actuator device in a flexural vibration mode. Yes.

ここで、後者のインクジェット式記録ヘッドとしては、圧力発生室が形成された流路形成基板に接合される基板、例えば、リザーバ形成基板に駆動ＩＣが搭載され、各圧電素子から引き出されたリード電極の端子部と駆動ＩＣとをワイヤボンディングを用いたボンディングワイヤにより電気的に接続する構造が採用されている（例えば、特許文献１参照）。このようなインクジェット式記録ヘッドの製造において行われるワイヤボンディングは、キャピラリを用いて、駆動ＩＣの端子部に接続配線の一端を接続した後に、そのボンディングワイヤの他端をリード電極の端子部であるボンディングパッドに接続することで行われる。   Here, as the latter ink jet recording head, a drive electrode is mounted on a substrate to be bonded to a flow path forming substrate in which a pressure generating chamber is formed, for example, a reservoir forming substrate, and lead electrodes drawn from each piezoelectric element. A structure is employed in which the terminal portion and the driving IC are electrically connected by a bonding wire using wire bonding (see, for example, Patent Document 1). Wire bonding performed in the manufacture of such an ink jet recording head uses a capillary to connect one end of a connection wiring to a terminal portion of a driving IC, and then uses the other end of the bonding wire as a terminal portion of a lead electrode. This is done by connecting to a bonding pad.

インクジェット式記録ヘッドでは、実装部品の小型化や振動子の高密度化が図られており、ボンディングワイヤを用いたデバイスの配線も高密度化が求められている。ボンディングワイヤを斜めに張る場合、部品を小さくするためには大きな角度で配置することが好ましく、振動子の高密度化の点からもボンディングワイヤのピッチを高密度化することが好ましい。   In the ink jet recording head, mounting parts are miniaturized and vibrators are densified, and device wiring using bonding wires is also required to be densified. When the bonding wire is slanted, it is preferably arranged at a large angle in order to reduce the size of the component, and the bonding wire pitch is preferably increased from the viewpoint of increasing the density of the vibrator.

このため、従来から、ボンディングワイヤを斜めに張って小型化を図る技術が知られている（例えば、特許文献２参照）。しかし、従来の技術では、最適なピッチや角度に関しては規定されておらず、最適な配置状況の特定が望まれているのが実情である。また、従来の技術では、ボンディング点を千鳥状に配置して隣接するワイヤとの接触を防止することでピッチを狭くしている。しかし、実装部品の小型化の点を考えると、ボンディング点は一直線上に配置されることが好ましい。   For this reason, conventionally, a technique for achieving downsizing by stretching a bonding wire obliquely is known (see, for example, Patent Document 2). However, in the prior art, the optimum pitch and angle are not defined, and it is the actual situation that it is desired to specify the optimum arrangement state. In the prior art, the pitches are narrowed by arranging bonding points in a staggered manner to prevent contact with adjacent wires. However, considering the downsizing of the mounted components, it is preferable that the bonding points are arranged on a straight line.

尚、上述した問題は、インクジェット式記録ヘッド等の液体噴射ヘッドだけでなく、ＬＳＩやＩＣ等の半導体素子を用いたボンディングワイヤの接続構造を有するデバイスなど
においても同様に存在する。 Note that the above-described problem exists not only in a liquid jet head such as an ink jet recording head but also in a device having a bonding wire connection structure using a semiconductor element such as an LSI or an IC.

特開２００２−１６０３６６号公報（第３頁、第２図）Japanese Patent Laid-Open No. 2002-160366 (page 3, FIG. 2) 特開２００３−３１６１０号公報（第１図、第４図、第５図）Japanese Patent Laid-Open No. 2003-31610 (FIGS. 1, 4, and 5)

本発明はこのような状況に鑑みてなされたもので、ボンディングワイヤを用いたデバイスの配線を高密度化することができる最適な配置状況を特定したボンディング構造を提供することを課題とする。   The present invention has been made in view of such circumstances, and an object of the present invention is to provide a bonding structure that specifies an optimal arrangement state in which the wiring of a device using bonding wires can be densified.

また、本発明はこのような状況に鑑みてなされたもので、ボンディングワイヤを用いたデバイスの配線を高密度化することができる最適な配置状況を特定したボンディング構造を採用したアクチュエータ装置及び液体噴射ヘッドを提供することを課題とする。   In addition, the present invention has been made in view of such a situation, and an actuator device and a liquid jet adopting a bonding structure that specifies an optimal arrangement state capable of increasing the wiring density of a device using bonding wires. It is an object to provide a head.

上記課題を解決する本発明の第１の態様は、加工必要幅Ｆのボンディング部としてボンディングワイヤをボンディングパッドに接続し、機械施工のばらつきをＣとしたとき、前記ボンディング部のピッチＰを、（Ｆ＋Ｃ）より大きくしたことを特徴とするボンディング構造にある。
本発明の第１の態様では、ボンディングワイヤを用いたデバイスの配線を高密度化することができる最適なボンディング部のピッチＰの配置状況を特定することができる。 The first aspect of the present invention for solving the above problem is that when a bonding wire is connected to a bonding pad as a bonding portion having a required processing width F, and the variation in machine construction is C, the pitch P of the bonding portion is ( The bonding structure is characterized by being larger than F + C).
In the first aspect of the present invention, it is possible to specify an optimal arrangement state of the pitch P of the bonding portions that can increase the density of the wiring of the device using the bonding wires.

上記課題を解決する本発明の第２の態様は、外径がＤのキャピラリを用いてステッチ幅Ａのボンディング部としてボンディングワイヤをボンディングパッドに接続し、キャピラリの施工のばらつきをＣとしたとき、前記ボンディング部のピッチＰを、（Ｄ／２＋Ａ／２＋Ｃ）より大きくしたことを特徴とするボンディング構造にある。
第２の態様では、ボンディングワイヤを用いたデバイスの配線を高密度化することができる最適なボンディング部のピッチＰの配置状況を特定することができる。 A second aspect of the present invention that solves the above problem is that when a capillary having an outer diameter D is used to connect a bonding wire to a bonding pad as a bonding portion having a stitch width A, and the variation in construction of the capillary is C, The bonding structure is characterized in that the pitch P of the bonding portions is larger than (D / 2 + A / 2 + C).
In the second aspect, it is possible to specify an optimal arrangement state of the pitches P of the bonding portions that can increase the density of the device wiring using the bonding wires.

上記課題を解決する本発明の第３の態様は、一端が固定されたボンディングワイヤの他端をボンディング部としてボンディングパッドに接続し、ボンディングワイヤの中央部におけるぶれとボンディングワイヤの径との合計寸法をＥとしたとき、前記ボンディング部のピッチＰを、合計寸法Ｅの２倍の値から一端側の固定ピッチの寸法を減じた値を超える寸法としたことを特徴とするボンディング構造にある。
第３の態様では、ボンディングワイヤを用いたデバイスの配線を高密度化することができる最適なボンディング部のピッチＰの配置状況を特定することができる。 The third aspect of the present invention that solves the above problem is that the other end of the bonding wire with one end fixed is connected to the bonding pad as a bonding portion, and the total dimension of the blur at the central portion of the bonding wire and the diameter of the bonding wire In the bonding structure, the pitch P of the bonding portion is a value exceeding a value obtained by subtracting the size of the fixed pitch at one end from a value twice the total size E.
In the third aspect, it is possible to specify an optimal arrangement state of the pitches P of the bonding portions that can increase the density of the device wiring using the bonding wires.

上記課題を解決する本発明の第４の態様は、一端が固定されたボンディングワイヤの他端を、外径がＤのキャピラリを用いてステッチ幅Ａのボンディング部としてボンディングパッドに接続し、キャピラリの施工のばらつきをＣとし、ボンディングワイヤの中央部におけるぶれとボンディングワイヤの径との合計寸法をＥとしたとき、前記ボンディング部のピッチＰを、（Ｄ／２＋Ａ／２＋Ｃ）より大きくし、且つ、合計寸法Ｅの２倍の値から一端側の固定ピッチの寸法を減じた値を超える寸法としたことを特徴とするボンディング構造にある。
第４の態様では、ボンディングワイヤを用いたデバイスの配線を高密度化することができる最適なボンディング部のピッチＰの配置状況を特定することができる。 According to a fourth aspect of the present invention for solving the above problem, the other end of the bonding wire having one end fixed is connected to a bonding pad as a bonding portion having a stitch width A using a capillary having an outer diameter D, When the variation in construction is C, and the total dimension of the deflection of the bonding wire and the diameter of the bonding wire is E, the pitch P of the bonding portion is larger than (D / 2 + A / 2 + C), and The bonding structure is characterized in that the dimension exceeds a value obtained by subtracting the dimension of the fixed pitch on one end side from a value twice the total dimension E.
In the fourth aspect, it is possible to specify the optimal arrangement state of the pitch P of the bonding portions that can increase the density of the wiring of the device using the bonding wires.

本発明の第５の態様は、第１〜４のいずれかの態様において、少なくとも前記ボンディングパッドの前記ボンディングワイヤと接続する表面が金からなることを特徴とするボンディング構造にある。
第５の態様では、金からなるボンディングパッドを用いることで、金からなるボンディングワイヤを最適な配置状況に特定して確実に接合することができる。 According to a fifth aspect of the present invention, in any one of the first to fourth aspects, at least a surface of the bonding pad connected to the bonding wire is made of gold.
In the fifth aspect, by using a bonding pad made of gold, the bonding wire made of gold can be specified in an optimal arrangement state and reliably bonded.

本発明の第６の態様は、第１〜４のいずれかの態様において、前記ボンディングワイヤの一端は、アクチュエータ装置の駆動部を駆動するための駆動ＩＣの端子部に接続されていることを特徴とするボンディング構造にある。
第６の態様では、一端が駆動ＩＣ側に接続されたボンディングワイヤを最適な配置状況に特定して確実に接合することができる。 According to a sixth aspect of the present invention, in any one of the first to fourth aspects, one end of the bonding wire is connected to a terminal portion of a driving IC for driving the driving portion of the actuator device. The bonding structure is as follows.
In the sixth aspect, the bonding wire whose one end is connected to the drive IC side can be identified and optimally bonded to the optimum arrangement state.

上記課題を解決する本発明の第７の態様は、基板の一方面側に設けられる振動板と、該振動板を介して設けられる下電極、圧電体層及び上電極からなる複数の圧電素子と、前記圧電素子を駆動させる駆動ＩＣと、前記下電極に接続されるボンディングパッドとを具備するアクチュエータ装置であって、第１〜６のいずれかの態様に記載のボンディング構造によってボンディングパッドにボンディングワイヤが接続されることを特徴とするアクチュエータ装置にある。
第７の態様では、下電極側のボンディングパッドに対してボンディングワイヤを最適な配置状況に特定して確実に接合することができる。 According to a seventh aspect of the present invention for solving the above problems, a diaphragm provided on one side of the substrate, a plurality of piezoelectric elements comprising a lower electrode, a piezoelectric layer, and an upper electrode provided via the diaphragm, An actuator device comprising a driving IC for driving the piezoelectric element and a bonding pad connected to the lower electrode, wherein the bonding wire is bonded to the bonding pad by the bonding structure according to any one of the first to sixth aspects. Is connected to the actuator device.
In the seventh aspect, it is possible to reliably bond the bonding wire to the bonding pad on the lower electrode side by specifying the optimal arrangement state.

上記課題を解決する本発明の第８の態様は、第７の態様のアクチュエータ装置と、ノズル開口に連通する圧力発生室が形成され、前記アクチュエータ装置を一方の面に具備した流路形成基板とを備えていることを特徴とする液体噴射ヘッドにある。
第８の態様では、ボンディングワイヤを用いたデバイスの配線を高密度化してボンディングパッドの幅を狭くすることができ、ノズル開口を高密度に配列できる。 An eighth aspect of the present invention that solves the above problem is the actuator device according to the seventh aspect, a flow path forming substrate that is formed with a pressure generation chamber communicating with the nozzle opening, and includes the actuator device on one surface; The liquid ejecting head is provided.
In the eighth aspect, the wiring of the device using the bonding wire can be densified to reduce the width of the bonding pad, and the nozzle openings can be arranged at a high density.

以下に本発明を実施形態に基づいて詳細に説明する。
図１には本発明の一実施形態に係る液体噴射ヘッドを示す分解斜視、図２には図１中の平面視及び断面視を示してある。 Hereinafter, the present invention will be described in detail based on embodiments.
FIG. 1 is an exploded perspective view showing a liquid jet head according to an embodiment of the present invention, and FIG. 2 is a plan view and a cross-sectional view in FIG.

液体噴射ヘッドを構成する流路形成基板１０は、本実施形態では、シリコン単結晶基板からなり、その一方面には予め熱酸化により形成した二酸化シリコンからなる弾性膜５０が形成されている。この流路形成基板１０には、その他方面側から異方性エッチングすることにより、複数の隔壁１１によって区画された圧力発生室１２が形成されている。また、各列の圧力発生室１２の長手方向外側には、後述するリザーバ形成基板３０に設けられるリザーバ部３２と連通し、各圧力発生室１２の共通の液体室となるリザーバ１００を構成する連通部１３が形成されている。また、連通部１３は、液体供給路１４を介して各圧力発生室１２の長手方向一端部とそれぞれ連通されている。また、流路形成基板１０の開口面側には、各圧力発生室１２の液体供給路１４とは反対側で連通するノズル開口２１が穿設されたノズルプレート２０が接着剤や熱溶着フィルム等を介して固着されている。なお、ノズルプレート２０は、厚さが例えば、０．０１〜１ｍｍで、線膨張係数が３００℃以下で、例えば２．５〜４．５［×１０-6／℃］であるガラスセラミックス、シリコン単結晶基板又は不錆鋼などからなる。 In this embodiment, the flow path forming substrate 10 constituting the liquid ejecting head is made of a silicon single crystal substrate, and an elastic film 50 made of silicon dioxide previously formed by thermal oxidation is formed on one surface thereof. The flow path forming substrate 10 is formed with a pressure generating chamber 12 partitioned by a plurality of partition walls 11 by anisotropic etching from the other side. Further, on the outer side in the longitudinal direction of the pressure generating chambers 12 in each row, there is communication with a reservoir portion 32 provided on a reservoir forming substrate 30 to be described later, and a communication that constitutes a reservoir 100 serving as a common liquid chamber for each pressure generating chamber 12. A portion 13 is formed. The communication portion 13 is in communication with one end portion in the longitudinal direction of each pressure generating chamber 12 via the liquid supply path 14. In addition, a nozzle plate 20 having a nozzle opening 21 formed on the opening surface side of the flow path forming substrate 10 on the side opposite to the liquid supply path 14 of each pressure generating chamber 12 is provided with an adhesive, a heat welding film, or the like It is fixed through. The nozzle plate 20 has a thickness of, for example, 0.01 to 1 mm, a linear expansion coefficient of 300 ° C. or less, for example, 2.5 to 4.5 [× 10 −6 / ° C.], glass ceramics, silicon It consists of a single crystal substrate or non-rust steel.

一方、このような流路形成基板１０の開口面とは反対側には、上述したように、厚さが例えば約１．０μｍの弾性膜５０が形成され、この弾性膜５０上には、厚さが例えば、約０．４μｍの絶縁体膜５５が形成されている。さらに、この絶縁体膜５５上には、厚さが例えば、約０．２μｍの下電極膜６０と、厚さが例えば、約１．０μｍの圧電体層７０と、厚さが例えば、約０．０５μｍの上電極膜８０とが、後述するプロセスで積層形成されて、圧電素子３００を構成している。ここで、圧電素子３００は、下電極膜６０、圧電体層７０及び上電極膜８０を含む部分をいう。一般的には、圧電素子３００の何れか一方の電極を共通電極とし、他方の電極及び圧電体層７０を圧力発生室１２毎にパターニングして構成する。そして、ここではパターニングされた何れか一方の電極及び圧電体層７０から構成され、両電極への電圧の印加により圧電歪みが生じる部分を圧電体能動部という。本実施形態では、下電極膜６０を圧電素子３００の共通電極とし、上電極膜８０を圧電素子３００の個別電極としているが、駆動回路や配線の都合でこれを逆にしても支障はない。何れの場合においても、圧力発生室毎に圧電体能動部が形成されていることになる。また、ここでは、圧電素子３００と当該圧電素子３００の駆動により変位が生じる振動板とを合わせて圧電アクチュエータと称する。   On the other hand, as described above, the elastic film 50 having a thickness of, for example, about 1.0 μm is formed on the side opposite to the opening surface of the flow path forming substrate 10. For example, an insulator film 55 having a thickness of about 0.4 μm is formed. Further, on the insulator film 55, a lower electrode film 60 having a thickness of, for example, about 0.2 μm, a piezoelectric layer 70 having a thickness of, for example, about 1.0 μm, and a thickness of, for example, about 0 The upper electrode film 80 having a thickness of 0.05 μm is laminated by a process described later to constitute the piezoelectric element 300. Here, the piezoelectric element 300 refers to a portion including the lower electrode film 60, the piezoelectric layer 70, and the upper electrode film 80. In general, one electrode of the piezoelectric element 300 is used as a common electrode, and the other electrode and the piezoelectric layer 70 are patterned for each pressure generating chamber 12. In addition, here, a portion that is configured by any one of the patterned electrodes and the piezoelectric layer 70 and in which piezoelectric distortion is generated by applying a voltage to both electrodes is referred to as a piezoelectric active portion. In the present embodiment, the lower electrode film 60 is used as a common electrode of the piezoelectric element 300 and the upper electrode film 80 is used as an individual electrode of the piezoelectric element 300. However, there is no problem even if this is reversed for convenience of a drive circuit and wiring. In either case, a piezoelectric active part is formed for each pressure generating chamber. Further, here, the piezoelectric element 300 and the vibration plate that is displaced by driving the piezoelectric element 300 are collectively referred to as a piezoelectric actuator.

なお、上述した例では、圧電素子３００の下電極膜６０、弾性膜５０及び絶縁体膜５５が振動板として作用する。また、圧電素子３００の上電極膜８０の長手方向一端部近傍から流路形成基板１０の圧力発生室１２の端部近傍まで引き出された引き出し配線として、例えば、金（Ａｕ）又はアルミニウム（Ａｌ）の配線金属層と当該金の下側にチタンタングステン（ＴｉＷ）、ニッケルクロム（ＮｉＣｒ）などの密着性金属層を設けてなるリード電極９０が延設されている。   In the example described above, the lower electrode film 60, the elastic film 50, and the insulator film 55 of the piezoelectric element 300 function as a diaphragm. In addition, as the lead-out wiring led out from the vicinity of one end in the longitudinal direction of the upper electrode film 80 of the piezoelectric element 300 to the vicinity of the end of the pressure generating chamber 12 of the flow path forming substrate 10, for example, gold (Au) or aluminum (Al) A lead electrode 90 provided with an adhesive metal layer such as titanium tungsten (TiW) or nickel chromium (NiCr) is provided below the wiring metal layer and the gold.

そして、このリード電極９０の先端部で金からなる端子部９０ａは、貫通孔３３で後述する駆動ＩＣ１１０とボンディングワイヤ１２０を介して電気的に接続されている。   A terminal portion 90a made of gold at the tip end portion of the lead electrode 90 is electrically connected to the driving IC 110, which will be described later, through a through hole 33 and a bonding wire 120.

このような圧電素子３００が形成された流路形成基板１０上には、リザーバ１００の少なくとも一部を構成するリザーバ部３２を有するリザーバ形成基板３０が接着剤３５を介して接合されている。このリザーバ部３２は、本実施形態では、リザーバ形成基板３０を厚さ方向に貫通して圧力発生室１２の幅方向に亘って形成されており、上述のように流路形成基板１０の連通部１３と連通されて各圧力発生室１２の共通の液体室となるリザーバ１００を構成している。   On the flow path forming substrate 10 on which such a piezoelectric element 300 is formed, a reservoir forming substrate 30 having a reservoir portion 32 constituting at least a part of the reservoir 100 is bonded via an adhesive 35. In this embodiment, the reservoir portion 32 is formed across the reservoir forming substrate 30 in the thickness direction and across the width direction of the pressure generating chamber 12, and as described above, the communicating portion of the flow path forming substrate 10 is formed. The reservoir 100 is connected to the pressure generating chamber 12 and serves as a common liquid chamber.

また、リザーバ形成基板３０の圧電素子３００に対向する領域には、圧電素子３００の運動を阻害しない程度の空間を有する圧電素子保持部３１が設けられている。さらに、リザーバ形成基板３０のリザーバ部３２と圧電素子保持部３１との間の領域には、リザーバ形成基板３０を厚さ方向に貫通する貫通孔３３が設けられている。そして、各圧電素子３００から引き出された引き出し配線であるリード電極９０は、その端部近傍が貫通孔３３内で露出されている。なお、このようなリザーバ形成基板３０の材料としては、例えば、ガラス、セラミックス材料、金属、樹脂等が挙げられるが、流路形成基板１０の熱膨張率と略同一の材料で形成されていることがより好ましく、本実施形態では、流路形成基板１０と同一材料のシリコン単結晶基板を用いて形成した。   A piezoelectric element holding portion 31 having a space that does not hinder the movement of the piezoelectric element 300 is provided in a region facing the piezoelectric element 300 of the reservoir forming substrate 30. Further, a through hole 33 that penetrates the reservoir forming substrate 30 in the thickness direction is provided in a region between the reservoir portion 32 and the piezoelectric element holding portion 31 of the reservoir forming substrate 30. The lead electrode 90 that is a lead-out wiring led out from each piezoelectric element 300 is exposed in the through hole 33 in the vicinity of the end thereof. Examples of the material of the reservoir forming substrate 30 include glass, ceramic material, metal, resin, and the like. In this embodiment, the silicon single crystal substrate made of the same material as the flow path forming substrate 10 is used.

さらに、リザーバ形成基板３０上には、各圧電素子３００を駆動するための駆動ＩＣ１１０が設けられている。この駆動ＩＣ１１０の各端子部１１１には、ボンディングワイヤ１２０の一端が接続され、第１ボンディング部２０１とされている。ボンディングワイヤ１２０の他端は、ボンディングパッドであるリード電極９０の端子部９０ａに接続され、第２ボンディング部２０２（後述する図４参照）とされている。なお、ボンディングワイヤ１２０のワイヤ径は、例えば、φ２０μｍの金（Ａｕ）からなるボンディングワイヤ１２０を用いた。   Furthermore, a drive IC 110 for driving each piezoelectric element 300 is provided on the reservoir forming substrate 30. One end of a bonding wire 120 is connected to each terminal portion 111 of the driving IC 110 to form a first bonding portion 201. The other end of the bonding wire 120 is connected to the terminal portion 90a of the lead electrode 90, which is a bonding pad, and serves as a second bonding portion 202 (see FIG. 4 described later). For example, the bonding wire 120 made of gold (Au) with a diameter of 20 μm was used as the bonding wire 120.

図１、図２に示すように、このようなリザーバ形成基板３０上には、コンプライアンス基板４０が接合されており、コンプライアンス基板４０のリザーバ１００に対向する領域の液体導入口以外の領域は、厚さ方向に薄く形成された可撓部４３となっており、リザーバ１００は、可撓部４３により封止されている。この可撓部４３により、リザーバ１００内にコンプライアンスを与えている。   As shown in FIGS. 1 and 2, the compliance substrate 40 is bonded onto the reservoir forming substrate 30, and the region other than the liquid introduction port in the region facing the reservoir 100 of the compliance substrate 40 has a thickness. The reservoir portion 100 is sealed by the flexible portion 43. Compliance is given to the reservoir 100 by the flexible portion 43.

ここで、駆動ＩＣ１１０の端子部１１１と、リード電極９０の端子部９０ａとをボンディングワイヤ１２０で接続するワイヤボンディング構造について図３乃至図５に基づいて説明する。   Here, a wire bonding structure in which the terminal portion 111 of the driving IC 110 and the terminal portion 90a of the lead electrode 90 are connected by the bonding wire 120 will be described with reference to FIGS.

図３には本発明の一実施形態に係るワイヤボンディング構造を示す要部断面、図４には本発明の一実施形態に係るワイヤボンディング構造を示す要部平面、図５にはキャピラリの状況を示す断面を示してある。なお、図中のボンディングワイヤ１２０の径やキャピラリ１３０の外径の表示は、説明をわかりやすくするために、割合等は実際の状態と異なった状態で示してある。   3 is a cross-sectional view of a main part showing a wire bonding structure according to one embodiment of the present invention, FIG. 4 is a plan view of a main part showing a wire bonding structure according to one embodiment of the present invention, and FIG. The cross section shown is shown. It should be noted that the display of the diameter of the bonding wire 120 and the outer diameter of the capillary 130 in the figure is shown in a state different from the actual state in order to make the explanation easy to understand.

図３（ａ）に示すように、ボンディングワイヤ１２０の一端は、ワイヤボンディング装置を構成するキャピラリ１３０に挿通された状態で保持されており、駆動ＩＣ１１０の端子部１１１にボールボンディングにより第１ボンディング部２０１とされて接続されている。このボールボンディングによる接続方法としてはボンディングワイヤ１２０の先端を溶融することで球体を形成し、この球体を駆動ＩＣ１１０の端子部１１１に押しつけることで行われる。   As shown in FIG. 3A, one end of the bonding wire 120 is held in a state of being inserted through a capillary 130 constituting a wire bonding apparatus, and the first bonding portion is connected to the terminal portion 111 of the driving IC 110 by ball bonding. 201 is connected. This connection method by ball bonding is performed by melting the tip of the bonding wire 120 to form a sphere and pressing the sphere against the terminal portion 111 of the drive IC 110.

次に、図３（ｂ）に示すように、ボンディングパッドであるリード電極９０の端子部９０ａにボンディングワイヤ１２０の他端を接続する。このとき、ボンディングワイヤ１２０を加熱すると共に超音波を印加しながらキャピラリ１３０によってボンディングワイヤ１２０をリード電極９０の端子部９０ａに押圧することで、ステッチ幅（Ａ：図４参照）を有する第２ボンディング部２０２（図４、図５参照）とされて接続されている。そして、第２ボンディング部２０２のステッチ幅Ａ、キャピラリ１３０の外径Ｄ及びキャピラリ１３０の施工のばらつきＣに基づいて、第２ボンディング部２０２のピッチＰが設定される。   Next, as shown in FIG. 3B, the other end of the bonding wire 120 is connected to the terminal portion 90a of the lead electrode 90 which is a bonding pad. At this time, the second bonding having a stitch width (A: see FIG. 4) is performed by pressing the bonding wire 120 against the terminal portion 90a of the lead electrode 90 by the capillary 130 while heating the bonding wire 120 and applying ultrasonic waves. The unit 202 (see FIGS. 4 and 5) is connected. Then, the pitch P of the second bonding portion 202 is set based on the stitch width A of the second bonding portion 202, the outer diameter D of the capillary 130, and the variation C of the construction of the capillary 130.

第２ボンディング部２０２のステッチ幅Ａは、加熱温度を高くすると共に超音波を大きくすることにより広くなる。また、荷重を大きくすると固定力が強くなって超音波による振幅が抑えられてステッチ幅Ａは狭くなる。また、低温のボンディングのため、温度には限界があり超音波による影響が最も大きくなる。これらの要素のバランスを考慮して必要な固定力が得られるステッチの加工必要幅Ｆ、即ち、ステッチ幅Ａが決められる。   The stitch width A of the second bonding portion 202 is increased by increasing the heating temperature and increasing the ultrasonic wave. Further, when the load is increased, the fixing force is increased, the amplitude due to the ultrasonic waves is suppressed, and the stitch width A is reduced. In addition, since the bonding is performed at a low temperature, there is a limit to the temperature, and the influence of ultrasonic waves is greatest. In consideration of the balance of these factors, the required processing width F of the stitch, that is, the stitch width A in which the necessary fixing force can be obtained is determined.

キャピラリ１３０の施工のばらつきＣは、ステージのばらつき、ステッチ幅Ａのばらつき、オペレータの誤差が影響し、それぞれの平均を取って合計したものを施工のばらつきＣの最大値としている。   The variation C of the construction of the capillary 130 is affected by the variation of the stage, the variation of the stitch width A, and the error of the operator, and the sum of the respective averages is taken as the maximum value of the variation C of the construction.

第２ボンディング部２０２のピッチＰは、キャピラリ１３０の径や種々の加工条件に基づいて決められるステッチの加工必要幅Ｆの寸法と、機械施工のばらつきＣの寸法との合計寸法より大きく設定される。つまり、
ピッチＰ＞（Ｆ＋Ｃ）
となる。 The pitch P of the second bonding portion 202 is set to be larger than the total dimension of the dimension of the stitching necessary width F determined based on the diameter of the capillary 130 and various processing conditions and the dimension of the variation C in machine construction. . That means
Pitch P> (F + C)
It becomes.

具体的には、図４に示すように、外径Ｄのキャピラリ１３０を用いてステッチ幅Ａの第２ボンディング部２０２とした場合、キャピラリ１３０の施工のばらつきをＣとして、ステッチ幅Ａの１／２の寸法と、外径Ｄの１／２の寸法と、ばらつきＣの寸法を合計した寸法よりも大きく設定される。つまり、
ピッチＰ＞（Ｄ／２＋Ａ／２＋Ｃ）
となる。この関係を満たした最小値が第２ボンディング部２０２の最小ピッチとなる。 Specifically, as shown in FIG. 4, when the capillary 130 having the outer diameter D is used as the second bonding portion 202 having the stitch width A, the variation in the construction of the capillary 130 is set as C, and 1 / st of the stitch width A is obtained. The dimension is set to be larger than the sum of the dimension of 2, the dimension of 1/2 of the outer diameter D, and the dimension of the variation C. That means
Pitch P> (D / 2 + A / 2 + C)
It becomes. The minimum value that satisfies this relationship is the minimum pitch of the second bonding portion 202.

このため、第２ボンディング部２０２の最小ピッチを設定することができ、第２ボンディング部２０２のピッチＰを可能な限り小さくしてヘッドの小型化を図ることが可能になる。   For this reason, the minimum pitch of the 2nd bonding part 202 can be set, and it becomes possible to attain the miniaturization of a head by making the pitch P of the 2nd bonding part 202 as small as possible.

一方、ボンディングワイヤ１２０は一端が駆動ＩＣ１１０（図３参照）の端子部１１１（図３参照）に接続され、他端がリード電極９０の端子部９０ａに接続されている。ボンディングワイヤ１２０は端部の高さが異なり所定の長さを有しているため、ボンディングワイヤ１２０にはぶれが存在する。ぶれにより隣接するボンディングワイヤ１２０が接触するとショートする事故につながるため、第２ボンディング部２０２のピッチＰは、ボンディングワイヤ１２０のぶれを考慮して設定される。   On the other hand, one end of the bonding wire 120 is connected to the terminal portion 111 (see FIG. 3) of the drive IC 110 (see FIG. 3), and the other end is connected to the terminal portion 90a of the lead electrode 90. Since the bonding wires 120 have different heights at the ends and have a predetermined length, the bonding wires 120 are shaken. When the adjacent bonding wires 120 come into contact with each other due to shaking, a short-circuiting accident is caused. Therefore, the pitch P of the second bonding portion 202 is set in consideration of the shaking of the bonding wires 120.

図６、図７に基づいてぶれを考慮した第２ボンディング部２０２のピッチＰの設定状況を説明する。図６にはぶれを説明する概念、図７にはボンディング部の座標とぶれの関係を表す概念を示してある。   A setting state of the pitch P of the second bonding unit 202 in consideration of shake will be described based on FIGS. FIG. 6 shows a concept for explaining blur, and FIG. 7 shows a concept showing the relationship between the coordinates of the bonding part and the blur.

図６に示すように、ボンディングワイヤ１２０のぶれは中心で最大となり、ぶれＥはボンディングワイヤ１２０の径とぶれ幅の合計の値となっている。このような状況で第２ボンディング部２０２のピッチＰを求める場合、図７に示すように、第１ボンディング部２０１及び施工後の第２ボンディング部２０２の座標値ａ、ｂ、ｃとキャピラリ１３０の外径Ｄを定数とした場合、接続する第２ボンディング部２０２の座標値ｄの最小値を求めることになる。   As shown in FIG. 6, the shake of the bonding wire 120 is the maximum at the center, and the shake E is the total value of the diameter and the shake width of the bonding wire 120. When obtaining the pitch P of the second bonding part 202 in such a situation, as shown in FIG. 7, the coordinate values a, b, c of the first bonding part 201 and the second bonding part 202 after construction and the capillary 130 When the outer diameter D is a constant, the minimum value of the coordinate value d of the second bonding portion 202 to be connected is obtained.

隣接するボンディングワイヤ１２０の中央の座標をそれぞれ（ａ／２、ｂ／２）、｛（ｃ＋ｄ）／２、ｂ／２｝としたとき、隣接するボンディングワイヤ１２０が接触しないためには、
｛（ｃ＋ｄ）／２｝−（ａ／２）＞（Ｄ／２）＋（Ｄ／２）
の関係を満足させればよい。つまり、ボンディングワイヤ１２０の中央部におけるぶれとボンディングワイヤの径との合計寸法をＥとしたとき、第２ボンディング部２０２のピッチＰを、合計寸法Ｅの２倍の値から第１ボンディング部２０１のピッチ（一端側の固定ピッチ）の寸法を減じた値を超える寸法とする。 When the coordinates of the center of the adjacent bonding wire 120 are (a / 2, b / 2) and {(c + d) / 2, b / 2}, respectively, in order for the adjacent bonding wire 120 not to contact,
{(C + d) / 2}-(a / 2)> (D / 2) + (D / 2)
If you satisfy the relationship. That is, when the total dimension of the deflection at the center of the bonding wire 120 and the diameter of the bonding wire is E, the pitch P of the second bonding section 202 is set to a value of the first bonding section 201 from a value twice the total dimension E. The dimension exceeds the value obtained by subtracting the dimension of the pitch (fixed pitch at one end).

具体的には、
ｄ＞２Ｄ＋ａ−ｃ
ｄ＞２Ｄ−（ｃ−ａ）
ｄ＞２Ｄ−（第１ボンディング部２０１のピッチ）
のいずれかの関係を満たした最小値が第２ボンディング部２０２の最小ピッチとなる。 In particular,
d> 2D + ac
d> 2D- (ca)
d> 2D- (pitch of the first bonding part 201)
The minimum value that satisfies any of the above relationships is the minimum pitch of the second bonding portion 202.

このため、ぶれを考慮して第２ボンディング部２０２の最小ピッチを設定することができ、第２ボンディング部２０２のピッチＰを可能な限り小さくしてヘッドの小型化を図ることが可能になる。   For this reason, the minimum pitch of the second bonding portion 202 can be set in consideration of blurring, and the head can be miniaturized by reducing the pitch P of the second bonding portion 202 as much as possible.

また、前述した
ピッチＰ＞（Ｄ／２＋Ａ／２＋Ｃ）
を満たすと共に
ｄ＞２Ｄ＋ａ−ｃ
ｄ＞２Ｄ−（ｃ−ａ）
ｄ＞２Ｄ−（第１ボンディング部２０１のピッチ）
のいずれかの関係を満たす場合の両方の関係を満足した最小値を第２ボンディング部２０２の最小ピッチとすることも可能である。 Further, the above-described pitch P> (D / 2 + A / 2 + C)
And d> 2D + ac
d> 2D- (ca)
d> 2D- (pitch of the first bonding part 201)
It is also possible to set the minimum value satisfying both of the relations when satisfying either of the relations as the minimum pitch of the second bonding portion 202.

つまり、第２ボンディング部２０２の最小ピッチを設定するに際し、キャピラリ１３０の施工のばらつきをＣとし、ボンディングワイヤ１２０の中央部におけるぶれとボンディングワイヤ１２０の径との合計寸法をＥとしたとき、第２ボンディング部のピッチＰを、（Ｄ／２＋Ａ／２＋Ｃ）より大きくし、且つ、合計寸法Ｅの２倍の値から第１ボンディング部２０１のピッチを減じた値を超える寸法とすることも可能である。   That is, when setting the minimum pitch of the second bonding portion 202, when the variation in the construction of the capillary 130 is C and the total dimension of the blur at the center of the bonding wire 120 and the diameter of the bonding wire 120 is E, It is also possible to make the pitch P of the two bonding parts larger than (D / 2 + A / 2 + C) and to exceed the value obtained by subtracting the pitch of the first bonding part 201 from the double value of the total dimension E. is there.

なお、本実施形態では、駆動ＩＣ１１０の端子部１１１とリード電極９０の端子部９０ａとを、上述したワイヤボンディング構造により接続したボンディングワイヤ１２０で電気的に接続するようにしたが、液体噴射ヘッドのボンディングワイヤに接続される電極の全てに上述したワイヤボンディング方法及びボンディングワイヤの接続構造を適用することができる。リード電極９０の端子部９０ａ以外では、例えば、図示しないが下電極膜６０と駆動ＩＣ１１０とを接続するボンディングワイヤや、リザーバ形成基板３０の駆動ＩＣ１１０が設けられた面に形成された配線電極の端子部と駆動ＩＣ１１０の端子部とを接続するボンディングワイヤなどが挙げられる。   In this embodiment, the terminal portion 111 of the driving IC 110 and the terminal portion 90a of the lead electrode 90 are electrically connected by the bonding wire 120 connected by the above-described wire bonding structure. The above-described wire bonding method and bonding wire connection structure can be applied to all the electrodes connected to the bonding wire. Other than the terminal portion 90a of the lead electrode 90, for example, although not shown, a bonding wire for connecting the lower electrode film 60 and the driving IC 110, or a terminal of a wiring electrode formed on the surface of the reservoir forming substrate 30 on which the driving IC 110 is provided. For example, a bonding wire for connecting the terminal and the terminal of the driving IC 110 may be used.

なお、本実施形態では、アクチュエータ装置、特に、液体噴射ヘッドに用いられるワイヤボンディング方法及びこれにより形成されたボンディングワイヤの接続構造を例示したが、特にこれに限定されず、ボンディングワイヤを用いる半導体デバイス等の他のデバイスにおいても本発明を適用することができる。   In this embodiment, the wire bonding method used for the actuator device, particularly the liquid jet head, and the connection structure of the bonding wire formed thereby are exemplified, but the present invention is not limited to this, and the semiconductor device using the bonding wire is exemplified. The present invention can also be applied to other devices such as the above.

本発明は、ボンディングパッドに接続されるボンディングワイヤのボンディング構造、振動板と圧電素子とを備えたアクチュエータ装置、特に、インク滴を吐出するノズル開口と連通する圧力発生室の一部を振動板で構成し、この振動板の表面に圧電素子を形成して、圧電体層の変位によりインク滴を吐出させる液体噴射ヘッドの分野で利用することができる。   The present invention relates to a bonding structure of a bonding wire connected to a bonding pad, an actuator device including a vibration plate and a piezoelectric element, and in particular, a vibration plate partially uses a pressure generation chamber communicating with a nozzle opening for discharging ink droplets. It can be configured and used in the field of liquid ejecting heads in which a piezoelectric element is formed on the surface of the diaphragm and ink droplets are ejected by displacement of the piezoelectric layer.

本発明の一実施形態に係る液体噴射ヘッドの分解斜視図である。FIG. 3 is an exploded perspective view of a liquid ejecting head according to an embodiment of the invention. 本発明の一実施形態に係る液体噴射ヘッドの平面図及び断面図である。2A and 2B are a plan view and a cross-sectional view of a liquid jet head according to an embodiment of the invention. 本発明の一実施形態に係るワイヤボンディング構造の要部断面図である。It is principal part sectional drawing of the wire bonding structure which concerns on one Embodiment of this invention. 本発明の一実施形態に係るワイヤボンディング構造の要部平面図である。It is a principal part top view of the wire bonding structure which concerns on one Embodiment of this invention. キャピラリの状況を示す断面図である。It is sectional drawing which shows the condition of a capillary. ぶれを説明する概念図である。It is a conceptual diagram explaining shake. ボンディング部の座標とぶれの関係を表す概念図である。It is a conceptual diagram showing the relationship between the coordinate of a bonding part, and blurring.

符号の説明Explanation of symbols

１０ 流路形成基板、 ２０ ノズルプレート、 ２１ ノズル開口、 ３０ リザーバ形成基板、 ４０ コンプライアンス基板、 ５０ 弾性膜、 ６０ 下電極膜、 ７０ 圧電体層、 ８０ 上電極膜、 ９０ リード電極、 ９０ａ 端子部、 １００ リザーバ、 １１０ 駆動ＩＣ、 １１１ 端子部、 １２０ ボンディングワイヤ、 １３０ キャピラリ、 ２０１ 第１ボンディング部、 ２０２ 第２ボンディング部、 ３００ 圧電素子
DESCRIPTION OF SYMBOLS 10 Flow path formation board | substrate, 20 Nozzle plate, 21 Nozzle opening, 30 Reservoir formation board | substrate, 40 Compliance board | substrate, 50 Elastic film, 60 Lower electrode film, 70 Piezoelectric layer, 80 Upper electrode film, 90 Lead electrode, 90a Terminal part, DESCRIPTION OF SYMBOLS 100 Reservoir, 110 Drive IC, 111 Terminal part, 120 Bonding wire, 130 Capillary, 201 1st bonding part, 202 2nd bonding part, 300 Piezoelectric element

Claims (8)

加工必要幅Ｆのボンディング部としてボンディングワイヤをボンディングパッドに接続し、機械施工のばらつきをＣとしたとき、前記ボンディング部のピッチＰを、（Ｆ＋Ｃ）より大きくしたことを特徴とするボンディング構造。   A bonding structure in which a bonding wire is connected to a bonding pad as a bonding portion having a required processing width F, and a pitch P of the bonding portion is larger than (F + C) when C is a variation in mechanical construction. 外径がＤのキャピラリを用いてステッチ幅Ａのボンディング部としてボンディングワイヤをボンディングパッドに接続し、キャピラリの施工のばらつきをＣとしたとき、前記ボンディング部のピッチＰを、（Ｄ／２＋Ａ／２＋Ｃ）より大きくしたことを特徴とするボンディング構造。   When a bonding wire is connected to a bonding pad as a bonding portion having a stitch width A using a capillary having an outer diameter D, and the variation in construction of the capillary is C, the pitch P of the bonding portion is (D / 2 + A / 2 + C). ) Bonding structure characterized by being larger. 一端が固定されたボンディングワイヤの他端をボンディング部としてボンディングパッドに接続し、ボンディングワイヤの中央部におけるぶれとボンディングワイヤの径との合計寸法をＥとしたとき、前記ボンディング部のピッチＰを、合計寸法Ｅの２倍の値から一端側の固定ピッチの寸法を減じた値を超える寸法としたことを特徴とするボンディング構造。   The other end of the bonding wire with one end fixed is connected to the bonding pad as a bonding portion, and when the total dimension of the blur at the center portion of the bonding wire and the diameter of the bonding wire is E, the pitch P of the bonding portion is A bonding structure characterized in that the dimension exceeds a value obtained by subtracting the dimension of the fixed pitch on one end side from a value twice the total dimension E. 一端が固定されたボンディングワイヤの他端を、外径がＤのキャピラリを用いてステッチ幅Ａのボンディング部としてボンディングパッドに接続し、キャピラリの施工のばらつきをＣとし、ボンディングワイヤの中央部におけるぶれとボンディングワイヤの径との合計寸法をＥとしたとき、
前記ボンディング部のピッチＰを、
（Ｄ／２＋Ａ／２＋Ｃ）より大きくし、且つ、
合計寸法Ｅの２倍の値から一端側の固定ピッチの寸法を減じた値を超える寸法とした
ことを特徴とするボンディング構造。 The other end of the bonding wire with one end fixed is connected to a bonding pad as a bonding portion having a stitch width A using a capillary having an outer diameter D, and variation in capillary construction is defined as C. And the total dimension of the bonding wire diameter is E,
The pitch P of the bonding part is
Greater than (D / 2 + A / 2 + C), and
A bonding structure characterized in that the dimension exceeds a value obtained by subtracting the dimension of the fixed pitch on one end side from a value twice the total dimension E. 請求項１〜４の何れかにおいて、少なくとも前記ボンディングパッドの前記ボンディングワイヤと接続する表面が金からなることを特徴とするボンディング構造。   5. The bonding structure according to claim 1, wherein at least a surface of the bonding pad connected to the bonding wire is made of gold. 請求項１〜４の何れかにおいて、前記ボンディングワイヤの一端は、アクチュエータ装置の駆動部を駆動するための駆動ＩＣの端子部に接続されていることを特徴とするボンディング構造。   5. The bonding structure according to claim 1, wherein one end of the bonding wire is connected to a terminal portion of a driving IC for driving a driving portion of the actuator device. 基板の一方面側に設けられる振動板と、該振動板を介して設けられる下電極、圧電体層及び上電極からなる複数の圧電素子と、前記圧電素子を駆動させる駆動ＩＣと、前記下電極に接続されるボンディングパッドとを具備するアクチュエータ装置であって、請求項１〜６の何れかに記載のボンディング構造によってボンディングパッドにボンディングワイヤが接続されることを特徴とするアクチュエータ装置。   A diaphragm provided on one surface side of the substrate, a plurality of piezoelectric elements comprising a lower electrode, a piezoelectric layer and an upper electrode provided via the diaphragm, a driving IC for driving the piezoelectric element, and the lower electrode An actuator device comprising a bonding pad connected to the bonding pad, wherein a bonding wire is connected to the bonding pad by the bonding structure according to claim 1. 請求項７に記載のアクチュエータ装置と、ノズル開口に連通する圧力発生室が形成され、前記アクチュエータ装置を一方の面に具備した流路形成基板とを備えていることを特徴とする液体噴射ヘッド。
8. A liquid ejecting head comprising: the actuator device according to claim 7; and a flow path forming substrate in which a pressure generation chamber communicating with a nozzle opening is formed and the actuator device is provided on one surface.
JP2004381327A 2004-12-28 2004-12-28 Bonding structure, actuator, and liquid injection head Pending JP2006186278A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004381327A JP2006186278A (en) 2004-12-28 2004-12-28 Bonding structure, actuator, and liquid injection head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004381327A JP2006186278A (en) 2004-12-28 2004-12-28 Bonding structure, actuator, and liquid injection head

Publications (1)

Publication Number Publication Date
JP2006186278A true JP2006186278A (en) 2006-07-13

Family

ID=36739137

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004381327A Pending JP2006186278A (en) 2004-12-28 2004-12-28 Bonding structure, actuator, and liquid injection head

Country Status (1)

Country Link
JP (1) JP2006186278A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008023799A (en) * 2006-07-19 2008-02-07 Seiko Epson Corp Liquid jet head and liquid jet device
US8158026B2 (en) 2008-08-12 2012-04-17 Samsung Led Co., Ltd. Method for preparing B-Sialon phosphor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008023799A (en) * 2006-07-19 2008-02-07 Seiko Epson Corp Liquid jet head and liquid jet device
US8158026B2 (en) 2008-08-12 2012-04-17 Samsung Led Co., Ltd. Method for preparing B-Sialon phosphor

Similar Documents

Publication Publication Date Title
JP4609182B2 (en) Piezoelectric actuator, inkjet head equipped with this piezoelectric actuator, and method of manufacturing piezoelectric actuator
JP4435167B2 (en) Wire bonding method
TWI273982B (en) Droplet ejection head and droplet ejection apparatus
JP4362996B2 (en) Piezoelectric / electrostrictive actuator having lattice arrangement and manufacturing method thereof
JP6504348B2 (en) Head and liquid ejecting apparatus
JP2011136462A (en) Liquid droplet ejecting head and liquid droplet ejecting device
JP2006166695A (en) Piezoelectric actuator, manufacturing method of piezoelectric actuator, and liquid transfer apparatus
JP5173624B2 (en) Recording head and manufacturing method of recording head
JP6160119B2 (en) Wiring structure, method for manufacturing wiring structure, droplet discharge head, and droplet discharge apparatus
JP2006321200A (en) Method for setting bias voltage of liquid injection head, liquid injection apparatus, and method for controlling the same
JP5151648B2 (en) Inkjet recording head
JP2006186278A (en) Bonding structure, actuator, and liquid injection head
WO2003078167A1 (en) Liquid jet head and liquid jet device
JP2007055021A (en) Liquid droplet delivering head, inkjet recording apparatus and method for manufacturing liquid droplet delivering head
JP2006121045A (en) Bonding structure, actuator equipment, and liquid injection head
US7229161B2 (en) Piezoelectric ink jet head
JP4737389B2 (en) Liquid ejecting head and liquid ejecting apparatus
US20050195247A1 (en) Wire bonding method and liquid-jet head
JP5061457B2 (en) Liquid transfer device and manufacturing method thereof
JP2010041061A (en) Liquid jet head
JP2005183752A (en) Printed board and ink jet head
JP6950313B2 (en) Liquid injection head and liquid injection device
JP2020175558A (en) Liquid jet head and liquid jet device
JP2822963B2 (en) Inkjet recording head
JP2010012724A (en) Liquid droplet discharge head, image forming apparatus, and method for manufacturing liquid droplet discharge head