JP2006179805A - Device for manufacturing crystal sheet - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a device for manufacturing a crystal sheet capable of effectively increasing efficiency for manufacturing the crystal sheet without interrupting crystal growth by throwing in a raw material. <P>SOLUTION: A cylindrical inner crucible 4 is provided inside an outer crucible 3 surrounded by a heater 15, and a fused silicon material heated by the heater 15 is supplied into the inner crucible 4 from the inside of the outer crucible 3 via an opening at the lower end of the inner crucible 4. A substrate support 6 for supporting a plurality of substrates 8 is rotated and driven by a rotary mechanism 12 for successively dipping the substrates 8 into fused silicon in the inner crucible 4. When the liquid level of the fused silicon in the inner crucible 4 is lowered to a limited height, a solid silicon raw material is supplied between the outer and inner crucibles 3, 4 via a raw material throwing unit 5 and a raw material throwing pipe. The outer crucible 3 is rotated around a vertical axis by a rotary lift mechanism 10 to agitate the fused silicon, thus quickly mixing the solid silicon raw material into the fused silicon for dissolution. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a crystal sheet manufacturing apparatus, and more particularly to a crystal sheet manufacturing apparatus suitable for manufacturing a silicon crystal sheet.

  A silicon crystal sheet used in a semiconductor device such as a solar cell is conventionally manufactured by slicing a silicon crystal block. As a method for producing the silicon crystal mass, a chocolate ski method (CZ method) or a casting method is generally employed.

  The CZ method is a method in which a single crystal silicon piece serving as a seed is brought into direct contact with a silicon raw material melt, and the single crystal is grown by pulling up the small piece to obtain a cylindrical silicon crystal lump. On the other hand, the casting method is a method in which a silicon raw material is placed in a crucible, heated and melted once, and then molten silicon is cooled from the bottom of the crucible to obtain a silicon crystal lump.

  A silicon crystal sheet produced by these methods is sliced through a slicing step to produce a silicon crystal sheet.

  However, since the slicing process is costly and the cutting allowance is a loss of silicon raw material, the development of a silicon ribbon method that does not require the slicing process has attracted attention. Examples of the silicon ribbon method include an EFG method and a dent light web method. The EFG method is a method in which a silicon die having a slit-like opening is used to pull up a silicon melt by capillary action, and a ribbon-like silicon is drawn out using a seed crystal at the upper end of the die. On the other hand, the Dentlite Web method is a method of generating a silicon crystal sheet on the surface of the silicon melt by keeping it in a supercooled state.

  However, in the above EFG method and Dentlite Web method, the growth rate of the silicon crystal is greatly influenced by the amount of heat transfer determined by the heat of solidification and the temperature distribution near the solid-liquid interface, and the crystal sheet is continuously stabilized. There is a problem that it cannot be generated.

  In order to solve this problem, a crystal sheet manufacturing apparatus as shown in FIG. 6 has been proposed (see, for example, JP-A-2001-247396: Patent Document 1). The manufacturing apparatus includes a chamber 31, a heat insulating material 37 disposed in the chamber 31, a plurality of substrates 33 disposed in the heat insulating material 37 and having a main surface on which a crystal sheet is to be formed, A rotation member 32 that supports the plurality of substrates 33 and rotates along a circular path, a heater 34, a crucible base 35, a silicon raw material input port 36, and a crucible 38 are provided.

  This crystal sheet manufacturing apparatus manufactures a silicon crystal sheet as follows.

  First, after silicon material is put into the crucible 38, vacuuming is performed with a vacuum pump so that the inside of the chamber 31 has a predetermined degree of vacuum. Thereafter, argon gas is introduced to bring the inside of the chamber 31 to normal pressure, and subsequently, a predetermined amount of argon gas is continuously supplied from the upper part of the chamber 31.

  Subsequently, the temperature in the crucible 38 is raised by the heater 34 adjacent to the crucible 38 to melt the silicon raw material in the crucible 38.

  Next, the liquid level height of the crucible 38 is adjusted by an elevating mechanism (not shown) provided on the crucible base 35 so that a predetermined amount of the surface of the substrate 33 is immersed in the molten silicon in the crucible 38.

  Thereafter, the plurality of substrates 33 are rotationally driven by the rotating member 32 in the direction indicated by the arrow R 3, and the plurality of substrates 33 are sequentially immersed in the molten silicon in the crucible 38, so that silicon is deposited on the main surface of the substrate 33. Crystal growth. The rotating member 32 has a cylindrical structure made of carbon, and has a cooling circuit through which cooling gas flows. The rotating member 32 is cooled by the cooling circuit.

  After the crystal growth of the main surface of the substrate 33 is completed, the plurality of substrates 33 are sequentially sent out from the main body chamber 31, and the silicon crystal is peeled off from the substrate 33 by a peeling roller (not shown). Get.

  In the conventional crystal sheet manufacturing apparatus, the amount of molten silicon in the crucible 38 decreases as the crystal growth on the substrate 33 proceeds. There is. Therefore, the height of the crucible 38 is adjusted by the lifting mechanism while the substrate 33 is rotationally driven by the rotating member 32.

  However, the height of the crucible 38 adjusted by the elevating mechanism has a limit height at which the crucible 38 and the rotating member 32 come into contact with each other. Therefore, before the limit height is reached, the rotating member 32 is stopped, and the silicon raw material is additionally charged from the raw material charging port 36 to return the liquid level in the crucible 38 to a predetermined height. The work of lowering the height to the original height is required. As a result, since the crystal growth of silicon is stopped, there is a problem that the manufacturing time of the crystal sheet becomes long.

Furthermore, the silicon material additionally charged into the crucible 38 is a solid material, and since silicon has a specific gravity smaller than that of the melt, the silicon material additionally charged floats on the surface of the molten silicon in the crucible 38. Will do. In order to melt the entire silicon raw material floating on the surface of the molten silicon, the temperature in the crucible 38 is set to 1500 ° C., which is higher than the melting point of silicon, in order to surely melt the upper part not in contact with the silicon raw material melt It is necessary to raise it to the extent. Therefore, in the conventional crystal sheet manufacturing apparatus, the rotation of the rotation member 32 is stopped, the temperature in the crucible 38 is increased from about 1430 ° C. during crystal growth to about 1500 ° C., and silicon raw material is charged. The entire silicon raw material is melted, and then the temperature in the crucible 38 is lowered to about 1430 ° C. again. Here, in order to stabilize the temperature of the crucible 38 and the temperature of the molten silicon, the temperature in the crucible 38 is lowered again to about 1430 ° C., and after a rest time of about 30 minutes, the rotating member 32. The crystal growth of silicon is resumed by resuming rotation. Therefore, since the silicon raw material is added, the crystal growth process is interrupted for 30 minutes or more, and there is a problem that the production efficiency of the crystal sheet is lowered.
JP 2001-247396 A

  Accordingly, an object of the present invention is to provide a crystal sheet manufacturing apparatus that can effectively improve the manufacturing efficiency of crystal sheets without interruption of crystal growth due to the introduction of raw materials.

In order to solve the above problems, the crystal sheet production apparatus of the present invention comprises:
A first crucible for receiving the molten semiconductor material;
A material supply unit for supplying a solid semiconductor material to the first crucible;
A heater for melting the solid semiconductor material supplied to the first crucible;
A second crucible to which the molten semiconductor material is supplied from the first crucible;
The molten semiconductor material in the second crucible is provided with a base immersion part for immersing a base on which the semiconductor crystal is to be grown.

  According to the above configuration, the semiconductor material is supplied to the first crucible by the material supply unit, while the base is immersed in the molten semiconductor material in the second crucible by the base immersion unit. Accordingly, since the solid semiconductor material can be supplied to the first crucible while the semiconductor crystal is being grown on the substrate in the second crucible, it is necessary to stop the crystal growth in order to supply the semiconductor material as in the prior art. There is no. As a result, it is possible to produce a crystal sheet by performing crystal growth on the substrate with higher efficiency than before.

  Further, the semiconductor material is divided into a first crucible to which the solid semiconductor material is supplied and a second crucible into which the substrate is immersed, and the molten semiconductor material is supplied from the first crucible to the second crucible. Therefore, it is possible to effectively prevent the disadvantage that the solid semiconductor material adheres to the crystal growth surface of the substrate and deteriorates the quality of the semiconductor crystal. Further, even when the liquid level of the molten semiconductor material of the first crucible moves as the solid semiconductor material is supplied to the first crucible, the movement of the liquid level can be prevented from being transmitted to the second crucible. Therefore, it is possible to prevent the disadvantage that the quality of the semiconductor crystal is lowered due to the movement of the liquid level.

  The crystal sheet manufacturing apparatus of the present invention is suitable for manufacturing a silicon crystal sheet using silicon as a semiconductor material.

  The crystal sheet manufacturing apparatus according to an embodiment includes a crucible rotating unit that rotates the first crucible when the material supply unit supplies the solid semiconductor material to the first crucible.

  According to the embodiment, since the solid semiconductor material is supplied to the first crucible in a state where the first crucible is rotated by the crucible rotating unit, the solid semiconductor material is contained in the first crucible. The already melted semiconductor material is uniformly stirred and mixed. Therefore, the solid semiconductor material is rapidly melted, and the temperature distribution of the semiconductor material in the first crucible is rapidly uniformed. As a result, since the molten semiconductor material can be rapidly supplied to the second crucible, the liquid surface position of the molten semiconductor material in the second crucible can be stabilized, and the production efficiency of the crystal sheet can be effectively improved. . Further, it is possible to prevent the molten semiconductor material from solidifying in the first crucible.

  In the crystal sheet manufacturing apparatus according to one embodiment, the second crucible is accommodated in the first crucible and has an opening for communicating the first crucible with the second crucible.

  According to the embodiment, the first and second crucibles can be arranged in a relatively small space, and the molten semiconductor material is supplied from the second crucible to the first crucible with a simple configuration. Can do.

  The crystal sheet manufacturing apparatus according to an embodiment includes a distance changing unit that changes a distance between a base on which the base immersion unit is immersed and a surface of the molten semiconductor material in the second crucible.

  According to the embodiment, even if the height of the surface of the molten semiconductor material in the second crucible changes due to the supply of the semiconductor material into the first crucible, Since the distance between the surface of the molten semiconductor material is changed, the substrate can be stably immersed to a predetermined depth of the molten semiconductor material.

  As described above, the crystal sheet manufacturing apparatus according to the present invention supplies a solid semiconductor material to the first crucible by the material supply unit, while the substrate is immersed in the molten semiconductor material in the second crucible by the substrate immersion unit. Since it is immersed, a solid semiconductor material can be supplied to the first crucible while growing the semiconductor crystal on the base in the second crucible, so that the crystal growth is performed on the base with higher efficiency than before. Crystal sheets can be produced.

  Hereinafter, the present invention will be described in detail with reference to the illustrated embodiments.

  FIG. 1 is a cross-sectional view showing a crystal sheet manufacturing apparatus as an embodiment of the present invention. FIG. 2 is a cross-sectional view showing a cross section orthogonal to the cross section of FIG. 1 of the crystal sheet manufacturing apparatus.

  The crystal sheet manufacturing apparatus 1 of the present embodiment generates heat by high-frequency induction using a coil, a chamber 2, a heat insulating material 16 disposed in the chamber 2, and a heat insulating material 16 disposed inside the heat insulating material 16. A heater 15 is provided. An outer crucible 3 as a first crucible is arranged so as to be surrounded by the heater 15. The outer crucible 3 is made of high purity carbon. Inside the outer crucible 3, an inner crucible 4 as a second crucible is accommodated. The inner crucible 4 has a substantially cylindrical shape and communicates with the inside of the outer crucible 3 through an opening at the lower end. The inner crucible 4 is made of carbon.

  The top plate of the chamber 2 is provided with a raw material charging device 5 into which a solid silicon raw material 14 is charged, and the solid silicon raw material 14 is placed in the outer crucible 3 through a raw material charging tube connected to the raw material charging device 5. It comes to be supplied. The raw material input part 5 and the raw material input pipe constitute the material supply part of the present invention.

  Above the inner crucible 4, a plurality of substrates 8 as a base on which silicon is crystal-grown are supported on the peripheral surface, and the substrate 8 is immersed in the molten silicon in the inner crucible 4. A substrate support portion 6 is provided as a substrate immersion portion. The substrate support 6 has a ring shape, and a rotating mechanism 12 that rotates the substrate support 6 is accommodated inside the ring-shaped substrate support 6.

  The top plate of the chamber 2 is provided with a substrate lifting mechanism 11 that lifts and lowers the substrate support 6 and the rotation mechanism 12. The substrate lifting mechanism 11 includes a motor-driven ball screw 22, a mover 23 that is screwed to the ball screw 22, and a suspension member 24 that is connected to the mover 23 and suspends the rotating mechanism 12. It consists of

  Inside the chamber 2, there is provided an inner crucible elevating mechanism 9 that supports the inner crucible 4 and raises and lowers the inner crucible 4 corresponding to the liquid level in the inner crucible 4. The inner crucible elevating mechanism 9 includes a ball screw 20 that is rotationally driven by a motor (not shown), a mover 21 that is screwed to the ball screw 20, and an arm 25 having one end connected to the mover 21. The inner crucible 4 is connected to the other end of the arm 25.

  The chamber 2 is provided with an outer crucible rotation elevating mechanism 10 for rotating the outer crucible 3 around the vertical axis and adjusting the height by moving the outer crucible 3 in the vertical direction.

  Further, a liquid level monitoring sensor 13 that monitors the liquid level of the molten silicon in the outer crucible 3 using a laser through a window formed in the chamber 2 is provided on the top plate of the chamber 2. .

  Further, a pusher mechanism 19 is provided for attaching the substrate 8 to be crystal-grown to the substrate support portion 6 and for removing the substrate 8 on which the crystal has been grown from the substrate support portion 6. Further, the substrate 8 to be crystal-grown is supplied from the outside of the chamber 2 to the inside and supplied to the pusher mechanism 19, and the substrate 8 on which the crystal is grown is received from the pusher mechanism 19. A carry-out belt conveyor 17b is carried out from the inside to the outside. These belt conveyors 17a and 17b are provided with guides for preventing the substrate 8 from falling on both sides in the longitudinal direction.

  The operation of the crystal sheet manufacturing apparatus 1 having the above configuration will be described by taking as an example the case of manufacturing a silicon crystal sheet used as a solar cell component.

  First, in a state where the inside of the chamber 2 is opened to the atmosphere, the inner crucible 4 is driven vertically upward by the inner crucible elevating mechanism 9 so as to move above the outer crucible 3. Then, a solid silicon raw material is put into the outer crucible 3, the door (not shown) of the chamber 2 is closed, and a vacuum is applied by a vacuum pump (not shown) so that the inside of the chamber 2 has a predetermined degree of vacuum. Pull. A cooling pipe (not shown) is attached to the outer wall surface and door of the chamber 2 for water cooling.

Next, after depressurizing the inside of the chamber 2 to 6.7 × 10 ⁻¹ Pa or less and introducing an argon gas to make the inside of the chamber 2 into a normal pressure environment, a flow rate of 1 dm ³ / min from the top of the chamber 2 is obtained. Start supplying argon gas.

  Subsequently, the heater 15 installed around the outer crucible 3 is started, the outer crucible 3 is heated until the temperature in the outer crucible 3 reaches 1500 ° C., and the solid silicon charged in the outer crucible 3 is heated. The raw material is melted. The molten silicon is supplied from the outer crucible 3 into the inner crucible 4 through the opening at the lower end of the inner crucible 4.

  Next, the amount of heat generated by the heater 15 is reduced, the temperature in the outer crucible 3 is lowered to 1430 ° C., this temperature state is maintained for about 30 minutes, and the temperature distribution of the molten silicon is stabilized.

  Thereafter, the inner crucible elevating mechanism 9 is driven, and the inner crucible 4 is lowered to a height soaking in the molten silicon in the outer crucible 3.

  Subsequently, the substrate lifting mechanism 11 is driven to adjust the height of the substrate support 6. Specifically, the height of the substrate support 6 is adjusted so that the substrate 8 supported by the substrate support 6 is immersed in the molten silicon in the inner crucible 4 at a depth of about 3 mm.

  The rotation mechanism 12 starts to rotate the substrate support portion 6, and the plurality of substrates 8 supported on the peripheral surface of the substrate support portion 6 are sequentially immersed in the molten silicon in the inner crucible 4. Thereby, silicon crystal growth is performed on the main surface of the substrate 8 to form the crystal sheet 7.

  FIG. 3 is a schematic view showing the substrate support 6 and the substrate 8 and the crystal sheet 7 formed by crystal growth on the main surface of the substrate 8. As shown in FIG. 3, the substrate support 6 and the substrate 8 are rotationally driven at a speed of 0.5 revolutions per minute in the direction indicated by the arrow R1, so that the main surface of the substrate 8 is appropriately coated with silicon. Crystal growth can be performed.

  The substrate support portion 6 is made of carbon and has a hollow structure, and a cooling circuit for flowing a cooling gas is provided therein to cool the substrate support portion 6 with the cooling gas.

  After the crystal sheet 7 is formed on the substrate 8, the sheet forming substrate 18 on which the crystal sheet 7 is formed is removed from the substrate support 6 by the pusher mechanism 19.

  FIG. 4 is a perspective view for explaining how the sheet forming substrate 18 is removed from the substrate support portion 6.

  First, when the sheet forming substrate 18 on which the crystal sheet 7 is formed is rotated by the substrate support portion 6 and positioned at the uppermost end of the substrate support portion 6, a crystal sheet is formed at the end portion of the supply belt conveyor 17a. The unprocessed substrate 8 to be processed is disposed at the standby position, and the sheet forming substrate 18 and the unprocessed substrate 8 are substantially parallel to the rotation axis direction of the substrate support 6. Here, the pusher mechanism 19 brings the pusher arm 27 into contact with the side surface of the sheet forming substrate 18 and the side surface of the substrate 8 before processing, and the sheet forming substrate 18 and the substrate before processing at a speed of 200 mm / sec. 8 is driven in the direction in which the rotation axis of the substrate support 6 extends, that is, in the direction of the arrow L in FIG. As a result, the sheet forming substrate 18 is moved from the substrate support portion 6 to the carry-out belt conveyor 17b, and the substrate 8 before processing is moved from the supply belt conveyor 17b to the substrate support portion 6. In this way, the sheet forming substrate 18 supported by the substrate support unit 6 is replaced with the substrate 8 before processing. The substrate support 6 is provided with a dovetail groove and a dovetail-like protrusion is provided on the bottom surface of the substrate 8. The dovetail-like protrusion of the substrate 8 is formed in the dovetail of the substrate support 6. So that the substrate 8 is fixed to the substrate support 6.

  The sheet forming substrate 18 transferred to the carry-out belt conveyor 17b and carried out of the chamber 2 is peeled off from the substrate 8 by a roller (not shown). Thus, the silicon crystal sheet 7 is obtained.

  In the crystal sheet manufacturing apparatus 1, as the silicon crystal sheet 7 is manufactured, the amount of molten silicon in the inner crucible 4 and the outer crucible 3 decreases, and the liquid level decreases. The lowering of the liquid level is detected by the liquid level monitoring sensor 13, and the outer crucible 3 is raised by the outer crucible rotary lifting mechanism 10 in response to the lowering of the liquid level. Thereby, even if the liquid surface position of the molten silicon in the inner crucible 4 and the outer crucible 3 is raised and the amount of molten silicon is reduced, the substrate 8 is stably 3 mm in the molten silicon in the inner crucible 4. I am trying to immerse to the depth of. That is, the outer crucible rotary lifting mechanism 10 functions as a distance changing unit of the present invention.

  Further, in order to prevent the upper end of the outer crucible 3 from coming into contact with the arm 25 supporting the inner crucible 4, the inner crucible 4 is moved by the inner crucible lifting mechanism 9 as the outer crucible 3 is raised. Raise.

  When the position of the outer crucible 3 that is driven to rise in accordance with the decrease in molten silicon in the outer crucible 3 and the inner crucible 4 reaches a predetermined limit position, supply of solid silicon raw material into the outer crucible 3 I do. That is, powdery or finely crushed silicon raw material is charged into the raw material charging device 5, and this powder or finely crushed silicon raw material is interposed between the outer crucible 3 and the inner crucible 4 via the raw material charging pipe. To be supplied. At this time, the outer crucible rotation elevating mechanism 10 rotates the outer crucible 3 around the vertical axis as indicated by an arrow R2 in FIG. The rotation direction of the outer crucible 3 may be clockwise as shown in FIG. 5 or may be counterclockwise. Since silicon has a specific gravity smaller than that of liquid, most of the silicon raw material charged in the outer crucible 3 floats on the surface of the molten silicon. Here, in the crystal sheet manufacturing apparatus 1 of the present embodiment, since the outer crucible 3 is rotationally driven when the solid silicon raw material is charged, the molten silicon is agitated by the rotation of the outer crucible 8. Accordingly, the silicon raw material floating on the surface of the liquid surface is caught in molten silicon that is stirred and fluidized, and rapidly melts. Therefore, it is not necessary to raise the heating temperature of the heater in order to melt the solid silicon raw material floating on the liquid surface of the molten silicon as in the prior art, and the crystal growth temperature is increased after the heating temperature of the heater is increased. There is no need to stabilize the molten silicon temperature over about 30 minutes after returning. Therefore, since the crystal sheet manufacturing apparatus 1 of this embodiment does not need to stop crystal growth on the substrate 8 when additional solid silicon raw material is added, the crystal sheet manufacturing efficiency is greatly improved as compared with the prior art. can do. In addition, since the solid silicon raw material is supplied to the outside of the inner crucible 4 where the crystal growth on the substrate 8 is performed, there is an effect that the solid silicon raw material adheres to the crystal growth surface and adversely affects the crystal quality. Can be prevented.

  The silicon melted quickly when the silicon raw material is supplied to the outer crucible 3 flows into the inner crucible 4 from the opening at the lower end of the inner crucible 4 having a cylindrical shape, and thereby the outer crucible 3 and the inner crucible 4. The liquid level of the molten silicon increases. The rise in the liquid level is detected by the liquid level monitoring sensor 13, and the outer crucible 3 is lowered by the outer crucible rotary lifting mechanism 10 in accordance with the rise amount of the liquid level. As a result, the liquid level of the inner crucible 4 is lowered, and the immersion depth of the substrate 8 in the molten silicon is stably maintained at 3 mm in the inner crucible 4.

  In the above embodiment, the outer crucible 3 is raised and lowered by the outer crucible rotary lifting mechanism 10 as the distance changing unit according to the liquid level drop of the molten silicon in the inner crucible 4 and the outer crucible 3. The substrate support 6 and the substrate 8 may be raised and lowered by the lifting mechanism 11. That is, the distance changing unit may be configured by the substrate lifting mechanism 11. Further, the distance changing unit may be configured by the substrate lifting mechanism 11 and the outer crucible rotating lifting mechanism 10.

  In this embodiment, a silicon crystal sheet manufacturing apparatus has been described as an example of a crystal sheet manufacturing apparatus. However, the present invention can also be applied to a semiconductor crystal sheet manufacturing apparatus other than silicon.

It is sectional drawing which shows the crystal sheet manufacturing apparatus as embodiment of this invention. It is sectional drawing which shows the cross section orthogonal to the cross section of FIG. 1 of a crystal sheet manufacturing apparatus. It is the schematic which shows a board | substrate support part and a board | substrate, and the crystal sheet formed in the main surface of this board | substrate. It is a perspective view explaining a mode that a sheet formation board is removed from a substrate support part. It is the figure which looked at a mode that an outside crucible is rotated from the upper part of an outside crucible. It is sectional drawing which shows the manufacturing apparatus of the conventional crystal sheet.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Crystal sheet manufacturing apparatus 3 Outer crucible 4 Inner crucible 5 Raw material input part 6 Substrate support part 8 Substrate 15 Heater

Claims (4)

A first crucible for receiving the molten semiconductor material;
A material supply unit for supplying a solid semiconductor material to the first crucible;
A heater for melting the solid semiconductor material supplied to the first crucible;
A second crucible to which the molten semiconductor material is supplied from the first crucible;
An apparatus for producing a crystal sheet, comprising: a base immersing section for immersing a base for crystal growth of the semiconductor in the molten semiconductor material in the second crucible. In the crystal sheet manufacturing apparatus according to claim 1,
An apparatus for producing a crystal sheet, comprising: a crucible rotating unit that rotates the first crucible when the material supply unit supplies the solid semiconductor material to the first crucible. In the crystal sheet manufacturing apparatus according to claim 1,
The said 2nd crucible is accommodated in the said 1st crucible, and has an opening which connects this 1st crucible and the said 2nd crucible, The manufacturing apparatus of the crystal sheet characterized by the above-mentioned. In the crystal sheet manufacturing apparatus according to claim 1,
An apparatus for producing a crystal sheet, comprising: a distance changing unit that changes a distance between a substrate to which the substrate immersion unit is immersed and a surface of the molten semiconductor material in the second crucible.

Images