JP2006177712A - Semiconductor device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having both heat detection pixels and visible light detection pixels with an accurate and simple structure. <P>SOLUTION: This semiconductor device comprises a semiconductor substrate, and is characterized in that a temperature detection part for structuring the heat detection pixels and a photoelectric conversion part for structuring the visible light detection pixels are formed on the semiconductor substrate. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a semiconductor device, more specifically, a thermal far-infrared solid-state imaging device, particularly a semiconductor device having both a far-infrared solid-state imaging device that detects a wavelength in the vicinity of 10 μm and a solid-state imaging device in the visible region or the near-infrared region. It relates to the manufacturing method.

  In recent years, it has been required to provide a semiconductor device having both a far-infrared detection sensor and a visible light detection sensor that detect a temperature change for a surveillance camera, a vehicle-mounted camera, or for failure analysis with high sensitivity and low cost. Patent Documents 1 and 2 propose an example of a semiconductor device that has both on one chip, that is, handles a plurality of wavelengths.

  As shown in FIG. 8, Patent Document 1 has a structure in which far-infrared region light irradiated from the back surface is condensed on the heat absorption unit 22 by a mirror 38 and detects light in the far-infrared region. The portion is configured by being laminated with a pixel portion in a visible region or a near infrared region. Further, as shown in FIG. 9, a configuration is proposed in which the near-infrared pixel portion NIR and the visible light pixel portion VISIVE are planarly arranged in a state where a portion for detecting far-infrared rays is stacked on the visible region detection portion.

  Patent Document 2 proposes an example in which a far-infrared pixel portion and a visible light pixel portion are configured vertically and light is incident from the front side, as shown in FIG. Reference numeral 12 denotes a visible light sensing pixel composed of a CCD or the like, and 25 denotes a far-infrared pixel portion that is heated and changes its resistivity when receiving infrared rays.

In general, an infrared image sensor, particularly a far infrared image sensor alone that detects a wavelength of about 10 μm, is classified into a quantum type and a thermal type. The quantum type has high sensitivity and high response speed, but has a large problem that it is very expensive because it has a lot of thermal noise and cannot be used unless the system is cooled to a low temperature. On the other hand, thermal sensors include pyroelectric, thermoelectromotive, thermistor, and bolometer types. Thermistor and bolometer types have good compatibility with normal semiconductor processes, especially silicon processes, can be manufactured at lower cost than other structures, and can be integrated into a single chip that includes detection circuits, readout circuits, and other circuits. Since then, development has progressed. For example, Patent Documents 3 to 5 show examples of infrared sensors using a semiconductor substrate.
US Pat. No. 5,808,350 US Patent Publication No. 6097031 Japanese Patent Laid-Open No. 10-209418 International Patent Publication No. WO99 / 31471 Japanese Patent Application Laid-Open No. 09-014579

  In Patent Documents 1 and 2, the visible and far-infrared detectors are configured vertically. The relationship between transmission and absorption depending on the wavelength depends on the material. Ideal transmission and absorption, that is, a material that transmits far-infrared light and absorbs visible light. Conversely, a material that absorbs far-infrared light and transmits visible light. Can be formed with a high-sensitivity solid-state imaging device even in the configurations of these Patent Documents 1 and 2.

  However, Patent Document 1 adopts a structure in which light is irradiated from the back surface in order to increase the sensitivity of visible light. Since far infrared rays have a considerable absorption coefficient even on a Si substrate, they reach the far infrared absorption film. Before it is attenuated, the sensitivity decreases.

  On the other hand, if it comprises like patent document 2, it will become the structure which laminates | stacks ITO as a far-infrared reflective layer for raising a far-infrared sensitivity, reduces the transmittance | permeability of visible light 10% or more, and causes a sensitivity fall. It becomes a problem. Furthermore, in both cases, the structure is a three-dimensional structure, and the creation method becomes complicated, and the reliability remains a problem.

  The present invention has been made to solve the above-described problems, and provides a semiconductor device having both a heat detection pixel and a visible light detection pixel with high sensitivity and low cost. As a semiconductor device that detects infrared rays, a semiconductor device that has high sensitivity, good uniformity, and can be manufactured at low cost, and a method for manufacturing the semiconductor device are provided.

  The semiconductor device of the present invention is characterized in that a semiconductor substrate, and a temperature detection unit for forming a heat detection pixel and a photoelectric conversion unit for forming a visible light detection pixel are formed on the semiconductor substrate. Is.

  According to such a configuration, it is possible to make the configuration of the heat detection pixel and the visible light detection pixel highly sensitive with a simple configuration.

  According to the present invention, it is possible to provide a semiconductor device having both a heat detection pixel and a visible light detection pixel with high sensitivity and a simple configuration.

  This will be described in detail with reference to the drawings. In addition, this invention is not limited to description of an Example, unless it follows the point, and you may combine each Example.

Example 1
FIG. 1 is a plan view of the semiconductor device of this embodiment. 1 is a heat detection pixel for detecting heat (infrared rays), 2 is a visible light detection pixel for mainly detecting visible light, and two different objects (wavelengths in the visible light region, Pixels for detecting (wavelength in the (far) infrared region) are arranged. By forming them in the same plane, it is possible to make the optical paths (optical systems) of both pixels substantially equal, and only one of the energy lines of a desired wavelength incident on both pixels will not be selectively attenuated. . Further, according to the configuration in which the heat detection pixel and the visible light detection pixel are formed on the same semiconductor substrate, the signal readout wiring, the signal readout circuit, the drive circuit, and the like can be shared by both pixels. For example, even if the wiring group to be read is different, the wiring can be distributed to both pixels by patterning the wiring layer formed in the same layer. In this case, the semiconductor substrate is preferably silicon in view of the ease of forming both pixels. Note that one heat detection pixel is a heat detection pixel, and two visible light detection pixels are quantum detection pixels. In general, there are two types of sensors that detect infrared rays and detect heat (temperature): a heat detection type and a quantum type that uses a compound semiconductor. However, a temperature detection unit for forming a heat detection pixel, and a visible light detection When the photoelectric conversion portion for forming the pixel is formed on the same semiconductor substrate (silicon), the heat detection type can be easily formed on the same substrate as the visible light pixel portion. preferable. Here, the heat detection type pixel that detects heat refers to a pixel having a detection element that uses infrared energy as heat, and the quantum type detection pixel uses a photoelectric effect of a semiconductor. Further, in the visible light pixel portion, a region corresponding to one pixel of the heat detection pixel is divided into four pixels, and each becomes a color pixel of a Bayer array. In this drawing, 3 and 6 are green pixels, 4 is red, and 5 is blue pixels. Reference numeral 15 denotes a signal line from the heat detection pixel, and 16 denotes a signal line from the visible light detection pixel.

  FIG. 2 is a schematic cross-sectional view of the semiconductor device of the present invention. 21A is a heat detection pixel unit, and 21B is a visible light detection pixel unit. In the heat detection pixel portion, a temperature detection unit 26 such as a resistance layer formed on the cavity 29 and an infrared (heat) absorption layer 28 are formed in contact with the detection unit. On the other hand, the visible light detection pixel portion has a structure including a photodiode 31 that becomes a photoelectric conversion portion for forming a quantum pixel. Reference numerals 24, 27, and 30 denote insulating layers, and reference numeral 25 denotes a Poly-Si electrode. However, this drawing is an example of a pixel portion, and needless to say, it is not particularly limited.

  The heat detection pixel unit 21A will be described. The heat detection pixel absorbs infrared rays from the measurement object by an infrared absorption layer indicated by 28. In general, if any object has absolute zero or more, it emits energy of a certain wavelength, and the relationship between black body temperature and thermal radiation is determined by Planck's radiation law. Even an object that is not a black body may be multiplied by the emissivity. For example, the emissivity of human skin is about 0.98. If the human body temperature is 36 ° C., the emitted infrared light has a wavelength distribution of about 3 to 60 μm, and the wavelength of 8 to 14 μm is about half. The pixel temperature rises at the absorption part that absorbs infrared rays, and the temperature rise is measured and output by the detection part. Since the infrared intensity is weak, the pixel part including the detection part is thermally separated, that is, the substance is in contact with the bulk with a material having a low thermal conductivity, and the temperature easily rises with a minute heat. A small heat capacity is necessary to improve sensitivity, and the uniformity of heat flow determined by their physical constants is important.

  The use of a gold black film such as VO (vanadium oxide) or Ti is preferable because the infrared absorption layer has a high absorption coefficient, but silicon can also be used because of some absorption. The detection unit 28 includes a resistor, a PN diode, and the like, and outputs a change in the characteristic value to the outside as the temperature rises. In addition, a pyroelectric type or a thermopile (thermoelectromotive force type) may be used. Whether these changes are read as current or as voltage can be arbitrarily selected depending on the circuit configuration.

  The visible light detection pixel unit 21B will be described. Light is converted into signal charges by the PN photodiode 31 and, for example, electrons are read by voltage or charge. There is a CMOS sensor type that reads by voltage or a CCD type that reads by electric charge, and it goes without saying that there is no particular limitation in principle. However, considering the reading of heat detection pixels, the CMOS sensor type is formed by the same process. Therefore, it is preferable.

  The surface areas of the heat detection pixel and the visible light detection pixel are preferably increased in thermal type. As described above, since the wavelength of infrared rays to be detected in the heat detection pixel is around 10 μm, the width of the detection region for detecting infrared rays is preferably 10 μm or more. On the other hand, the wavelength of visible light is 700 nm or less and is about 2 μm at the longest, and the pixel size (area of the light receiving surface) can be reduced. Considering each sensitivity, it is preferable to arrange the heat detection pixels larger than arranging the pixels in a one-to-one size. In the example of FIG. 1, it is arranged in a size of 1: 4 because of the Bayer arrangement. In an area where there is a heat detection pixel but no visible light pixel, it is possible to take a method such as forming an image using an average value of surrounding pixels as an output in order to increase the resolution. Here, for example, the average value of the pixel outputs of the pixels 10, 11, 12, and 13 may be output as the blue pixel at the position of the pixel 14 where the heat detection pixel is arranged. This is an example, and may be performed in other colors, and needless to say, there is no particular limitation.

  FIG. 3 is a schematic diagram including the entire readout system. Reference numeral 17 is a vertical shift register, 18 is a horizontal shift register, 19 is a readout circuit, and 20 is a timing generator for applying drive pulses to 17-19. Here, the vertical shift register, the horizontal shift register, and the readout circuit for the heat detection pixels are indicated by 17A, 18A, and 19A, respectively, and those for the visible light detection pixel are 17B, 18B, and 19B, respectively. In this way, by setting the drive circuit and the readout circuit separately for the heat detection pixel and the visible light detection pixel, it is possible to set different frame rates. For example, the heat detection pixel can be 15 frames per second, and the visible light detection pixel can be 30 frames per second. Depending on the configuration of the heat detection pixel, the response speed is not as fast as that of the quantum-type visible light imaging pixel, so it may be preferable to change the frame rate in accordance with applications such as sensitivity improvement.

  It is preferable that the final output has the same specifications as the thermal type and the visible light detection type because the connection with the readout circuit is facilitated. Such a design is preferable in the circuit, but is not particularly limited.

  Next, a method for manufacturing the semiconductor device of this embodiment will be described with reference to FIG. Here, the material is described as an example, but is not particularly limited. Moreover, it is not limited to this preparation method, For example, even if it uses the method using SOI, it will not specifically limit unless the main point of this invention is followed.

  First, an SOI region (BOX oxide film) 23 is partially formed on the n-type Si substrate 22 by, for example, the SIMOX method so as to form an insulating region by ion implantation of high concentration oxygen. (FIG. 4A) This region is a region where a heat detection pixel portion is formed. Thereafter, a p-type semiconductor region is formed in a desired region. This p-type semiconductor region forms part of the photodiode. The n-type semiconductor region is formed together if necessary in the peripheral circuit. Next, an element isolation region 24 is formed by field oxidation. The silicon oxide film formed by this field oxidation may be formed so as to be connected to the BOX oxide film 23. (FIG. 4B) A silicon oxide film to be a gate insulating film and a polysilicon film to be a gate electrode are formed and then patterned to form a gate electrode 25, and then a photodiode 31 to be a photoelectric conversion portion is formed. For example, an n-type semiconductor region serving as a charge storage region of a photodiode is formed by phosphorus ion implantation, and a p-type semiconductor region is formed on the light receiving surface by boron ion implantation to suppress dark current. Thereafter, a high-concentration n-type semiconductor region and a high-concentration p-type semiconductor region are formed as source / drain regions of the MOS transistor. Simultaneously with these formations, an element such as a pn diode or a resistor serving as a detection portion of the heat detection pixel may be formed. In this embodiment, the resistance element is formed simultaneously with the formation of the n-type semiconductor region for forming the LDD structure of the MOS transistor. (FIG. 4C) After forming the silicon oxide film 27 as an insulating film, contact holes are formed (not shown). Thereafter, a Ti film as a wiring layer is formed by sputtering. This Ti film can also be used as the infrared absorption layer 28. Further, it is preferable that a large contact hole is opened in the pixel portion to improve the heat conduction between the infrared absorption layer and the detection portion. (FIG. 4D) Thereafter, an insulating film and further a wiring layer are formed, and after the heat detection pixel portion is patterned, the BOX oxide film is etched. Thereafter, after forming a silicon nitride film 30 as an insulating film, the surface of the BOX oxide film is exposed by anisotropic etching. Further, the exposed BOX oxide film is etched with dilute hydrofluoric acid to create a cavity. (FIG. 4 (e)) Since the upper surface and the lower surface of the cavity portion of the thermal pixel portion thus created are substantially parallel and thermally blocked by the cavity portion, a weak thermal change can be detected. It becomes possible. Heat was efficiently conducted from the heat absorption part to the detection part, and the temperature resolution was 0.2K. In addition, since the circuit is on single crystal silicon, a semiconductor device having a small TCR and good characteristics can be formed. Although the visible light detection pixel is shown as an example of a CMOS sensor, it goes without saying that a CCD configuration may be used as described above. In particular, an element can be formed on a semiconductor substrate without greatly changing the process. In this embodiment, the surface area of the thermal pixel is formed to be 30 μm square. Since the quantum pixel mainly detects a wavelength of 0.4 to 0.8 μm, the pixel size is set to 15 μm.

  According to the configuration and the manufacturing method described above, it is possible to form a semiconductor device having favorable characteristics without disposing the heat detection pixels and the visible light detection pixels in a plane and without losing sensitivity.

(Example 2)
The present embodiment will be described with reference to FIG. FIG. 5 is a plan view of the semiconductor device of this embodiment. Reference numeral 32 denotes a heat detection pixel that detects far-infrared rays, and reference numeral 33 denotes a quantum pixel that detects visible light, which are arranged for each column. Although the resolution in the horizontal direction is inferior to that of the first embodiment, the resolution in the vertical direction is high, and reading from the signal lines is relatively easy, and the number of signal lines can be reduced.

(Example 3)
The present embodiment will be described with reference to FIG. FIG. 6 is a plan view of the semiconductor device of this example. Reference numeral 34 denotes a heat detection pixel that detects far infrared rays, reference numeral 35 denotes a quantum pixel that detects visible light, and reference numeral 36 denotes a quantum pixel that detects near infrared rays. In this way, two or more pixels in different wavelength regions may be arranged in a plane. It goes without saying that a color filter may be arranged in visible light pixels and further divided into color pixels, and according to this embodiment, light of various wavelengths can be detected.

Example 4
The present embodiment will be described with reference to FIG. In this embodiment, a configuration in which porous silicon is formed under the detection portion of the heat detection pixel is shown. First, the manufacturing method will be described.

A silicon wafer is prepared, its surface is patterned, boron is partially implanted by ion implantation, and porous silicon 38 is formed by anodization (FIG. 7A). As an example of the formation conditions, it was manufactured under the following conditions.
8-inch P-type substrate (0.013-0.017 Ωcm)
Chemical conversion solution: 50% HF: IPA = 2: 1 (volume ratio)
Current density: 8 mA / cm
Current application time: 11 min
Porous silicon thickness: 10 μm
The porous region can form single crystal silicon thereon, and can simultaneously satisfy the property that the etching selectivity with silicon can be increased.

  As the wafer, only the portion to be made porous is P-type (0.013 to 0.017 Ωcm), and other than this, a configuration such as P-type 1 to 2 Ωcm or N-type 1 to 2 Ωcm may be used. Of these, a low-resistance substrate is preferable in terms of a structure capable of stably taking a potential, and more specifically, it is preferable to use a P + substrate in consideration of ease of control of porosity.

  Subsequently, low temperature oxidation was performed in oxygen at 400 ° C. for 1 hour. Then, it loads to an epitaxial apparatus. The surface oxide film is previously removed with DHF (dilute hydrofluoric acid) or the like. After loading into the epitaxial apparatus, surface treatment is performed in hydrogen at 950 ° C. for 10 seconds to fill the surface holes. Further, a small amount of silicon-based gas is introduced to fill the remaining surface holes. Thereafter, epitaxial growth was performed to form an epitaxial silicon layer having a predetermined thickness (FIG. 7B). The thickness is determined by the device to be manufactured, and can be controlled in a wide range from about 10 nm to several tens of μm.

  Thereafter, an element was formed in the same manner as in the above-described example, that is, a temperature detecting element and a signal processing circuit were formed in single crystal epitaxial silicon. The temperature detection element is selected from a thermistor, a bolometer type, a resistor on a single crystal silicon, a PN junction diode, and the like. These elements use the property that element characteristics change with temperature, and read the changed signal. However, this is merely an example, and the effect is not changed even if a pyroelectric type or a thermocouple type is used instead of the bolometer type, and there is no particular limitation (FIGS. 7C and 7D).

Thereafter, the single crystal epitaxial silicon in the heat detection pixel portion is finally thermally and electrically separated for each pixel. First, the periphery of each pixel (between adjacent pixels) is patterned after protecting the wiring layer, and then the insulating film and single crystal silicon are etched until the porous layer is exposed. Next, the porous region is etched using an alkaline etching solution such as KOH to etch the porous region. Only the porous region can be removed due to the difference in etching rate between the porous region and the single crystal silicon layer, and the upper surface and the lower surface of the cavity can be formed substantially in parallel. (Fig. 7 (e))
In the present embodiment, the method for forming the porous region is shown as an example, but is not particularly limited. For example, the formation of the porous region is changed in two steps, the porosity is reduced in the first region on the surface side to form the single crystal epitaxial layer with good quality, and the second region below the first region is formed. In this region, the porosity is larger than that in the first region, and the thermal insulation is preferably increased. In particular, the cavity state can be formed by increasing the current density and strengthening the etching mode, and the porous region may be left as it is. In the case of such a manufacturing method, the last etching step can be omitted. In Patent Document 3, since anisotropic alkali etching is used, the controllability of the etching shape is poor, and it is difficult to uniformly control the size and shape of the cavity, and it is difficult to make a small pixel. Therefore, it is difficult to uniformly control the heat flow, and the variation in output characteristics of each pixel increases. In Patent Document 4, the shape control is controlled by the stopper region, that is, it is determined by a photolithographic process with high controllability, so that the controllability is high, but the process is complicated. In addition, the use of an SOI wafer is expensive. Furthermore, in both Patent Documents 3 and 4, the shape of the cavity is determined by isotropic etching. When etching is performed up to the pixel end, the etching depth at the center increases, while the cavity at the pixel end has a shallow structure. It becomes a structure in which heat easily escapes and sensitivity is lowered. In Patent Document 5, which is an example of an inexpensive manufacturing method that does not use an SOI substrate, the thermal resistance is small as compared with a structure in which a cavity is formed, and the single crystal region does not exist on the opening. There is a problem that it is difficult to form the detection circuit on the single crystal silicon. On the other hand, according to the manufacturing method and structure of the present embodiment, the visible light detection pixel and the heat detection pixel can be formed on the same semiconductor substrate by a simple process, and the configuration under the temperature detection unit is It becomes possible to form so that a temperature detection sensitivity can be improved.

  In this manner, it is possible to form a heat detection pixel that is simple, has a good TCR, and has little noise. Further, it is possible to form an image sensor that has an advantage that other circuit units can be set in parallel. Further, the heat detection pixel and the visible light detection pixel can be formed in a planar arrangement, and a semiconductor device having good characteristics can be formed without impairing sensitivity.

(Example 5)
A camera capable of simultaneously detecting visible light and far infrared rays (heat) was produced using the semiconductor device created in the above-described embodiment. The lens was designed using CaF2 that transmits far-infrared rays and visible light and that can collect wavelengths near 0.5 μm and wavelengths near 10 μm. With this configuration, it is possible to simultaneously capture a visible color image and a far-infrared image with one optical system.

(Example 6)
Cameras that simultaneously detect visible light and far infrared rays were created using the semiconductor devices of Examples 1 to 5. The optical system uses a mirror and constitutes an optical system free from chromatic aberration. In particular, when using a semiconductor solid-state imaging device that detects visible light, near infrared rays, and far infrared rays as in Example 3, a mirror optical system is preferable. With this configuration, it is possible to simultaneously capture a visible color image and a far-infrared image with one system.

FIG. 3 is a configuration diagram of a pixel unit according to the first exemplary embodiment. FIG. 3 is a cross-sectional view of a pixel portion according to the first embodiment. 1 is a diagram illustrating a configuration diagram of Example 1. FIG. 6 is a diagram showing a manufacturing method of Example 1. FIG. FIG. 6 is a configuration diagram of a pixel unit of Example 2. FIG. 6 is a pixel unit configuration diagram of Embodiment 3. 6 is a diagram showing a manufacturing method in Example 4. FIG. It is sectional drawing which shows the structure by which the far-infrared pixel part and visible light pixel part of the prior art example were laminated | stacked. It is a top view explaining the structure by which the near-infrared pixel part and visible light pixel part of the prior art example shown in FIG. 8 were distribute | arranged. It is sectional drawing which shows the example which comprised the far-infrared pixel part and visible light pixel part of the prior art example to the vertical type.

Explanation of symbols

1, 21A, 32, 34 Heat detection pixel portion 2, 21B, 33, 35 Visible light detection pixel portion 3-6 pixels 15, 16 signal line 17 vertical shift register 18 horizontal shift register 19 readout circuit 20 timing generator 22 silicon single crystal Substrate 23 BOX oxide film 24, 27, 30 Insulating layer 25 Polysilicon electrode 26 Detection circuit region 28 Infrared absorption layer 29 Cavity region 31 Photo diode 36 Near infrared pixel 37 Pixel 38 Porous silicon

Claims (17)

  A semiconductor device comprising: a semiconductor substrate; and a temperature detection unit for forming a heat detection pixel and a photoelectric conversion unit for forming a visible light detection pixel are formed on the semiconductor substrate.   The semiconductor device according to claim 1, wherein the heat detection pixel and the visible light detection pixel are formed in substantially the same plane.   2. The thermal detection pixel is a thermal pixel that detects infrared energy as heat, and the visible light detection pixel is a quantum pixel that detects visible light by photoelectric conversion of a semiconductor. 2. The semiconductor device according to 2.   The semiconductor device according to claim 1, wherein the semiconductor substrate is made of silicon.   The semiconductor device according to claim 1, wherein an infrared absorption region is formed in contact with the temperature detection unit.   The semiconductor device according to claim 1, wherein a surface area of the heat detection pixel is larger than a surface area of the visible light detection pixel.   The semiconductor device according to claim 6, wherein the surface area of the heat detection pixel is four times the surface area of the visible light detection pixel.   8. The semiconductor device according to claim 1, wherein a frame rate of a signal from the heat detection pixel is different from a frame rate of a signal from the visible light detection pixel. 9.   The first signal line group that reads a signal from the heat detection pixel and the second signal line group that reads a signal from the visible light detection pixel are connected to a readout circuit of the same system. The semiconductor device according to any one of claims 1 to 8.   The temperature detecting unit is mainly formed of a single crystal semiconductor, a cavity is formed in a lower part of the temperature detecting unit, and an upper surface and a lower surface of the cavity are substantially parallel. The semiconductor device of any one of -9.   The semiconductor device according to claim 1, wherein the temperature detection unit is mainly formed of a single crystal semiconductor, and a lower region of the temperature detection unit includes at least a porous region.   The semiconductor device according to claim 11, wherein the porous region includes a plurality of porous regions having different degrees of porosity.   13. The semiconductor device according to claim 12, wherein the plurality of porous regions having different porosities have a porosity of a region adjacent to the temperature detection unit that is smaller than a maximum porosity of other regions. .   It has the semiconductor device of any one of Claims 1-13, and the condensing structure which condenses with the same optical system with respect to the said heat detection pixel and the said visible light detection pixel, It is characterized by the above-mentioned. camera.   The camera according to claim 14, wherein the optical system is a mirror optical system using at least one mirror.   A method of manufacturing a semiconductor device in which a temperature detection part is formed of a semiconductor, comprising a step of making at least a part of a semiconductor substrate porous, and a single crystal semiconductor layer is epitaxially grown on the porous region. A method for manufacturing a semiconductor device, comprising: a step of forming; and a step of forming, in the epitaxial single crystal semiconductor layer, a detection portion that detects a temperature change due to infrared absorption in a nearby region.   The method of manufacturing a semiconductor device according to claim 16, wherein the semiconductor substrate is a high-concentration p + silicon substrate.

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