JP2006156985A - Organic semiconductor device and method of fabricating the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of fabricating a low-cost organic TFT in which an organic semiconductor is not exposed to the atmosphere without relying on any expensive dedicated apparatus and also to provide a method of fabrication usable at such a low temperature as causes no significant thermal dissociation in a material while allowing reduction of a device size. <P>SOLUTION: The method includes providing a protection film on an organic semiconductor film and sealing the protection film thereover with a sealing material made of resin. As a result, it is enabled to protect the organic semiconductor film from moisture or oxygen and a stress generated when hardening the resin. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

The present invention relates to an organic semiconductor device in which a protective film is provided on an organic semiconductor film in order to relieve stress generated when a sealing material made of resin is cured. The present invention also relates to a method for manufacturing the organic semiconductor device of the present invention.

In recent years, research on a display device including a thin film transistor (hereinafter referred to as a TFT) having a thin film semiconductor has been advanced and put into practical use. Since a display device provided with this TFT can constitute a large number of pixels, a high-definition display device can be realized. Further, it is known that the power consumption is low because it can be operated at a lower voltage than the CRT. Further, since a screen can be configured without using a large display tube like a CRT, it can save space and is widely used as a display unit for personal computers, PDAs, and TVs. Future demands for display devices include further reductions in thickness, weight, and flexibility, and expectations are increasing for the use of resin substrates such as plastics.

However, most conventional TFTs are manufactured using an inorganic semiconductor material such as amorphous silicon or crystalline silicon as a semiconductor film. For this reason, when a TFT is formed using an inorganic semiconductor material, a processing temperature exceeding 350 ° C. is required for forming the semiconductor film, and the use of a plastic substrate or the like is limited.

On the other hand, research on organic TFTs using organic semiconductors as semiconductor films is underway. Organic TFTs are rich in flexibility because they use organic materials. In addition, since it can be formed at a lower temperature than a device using an inorganic semiconductor, a resin material such as plastic can be used for the substrate. As a result, a light and flexible device can be obtained. Furthermore, the organic TFT can be expected not only to simplify the process by printing, droplet discharge method, vapor deposition method, etc., but also can use inexpensive substrate materials, so that the manufacturing cost of the device can be suppressed, and the cost can be reduced. It can be estimated that this is advantageous.

However, since an organic semiconductor is oxidized or decomposed by contact with water, light, or oxygen, there is a demerit that if the organic semiconductor is left in the atmosphere, the electrical characteristics are deteriorated. Therefore, the organic thin film transistor currently produced tends to deteriorate as time passes even if good TFT characteristics are obtained immediately after production.

These countermeasures include sealing the organic layer with glass or the like, and measuring characteristics in a nitrogen atmosphere. However, when sealing with glass, there is a problem that the device size (especially the thickness) becomes large, and even if the characteristics are measured in a nitrogen atmosphere, it does not constitute a fundamental solution when applied to an actual device.

In addition, a method of forming a sealing material made of resin on an organic layer has been studied (for example, Patent Document 1). With this method, the organic layer can be prevented from coming into contact with the air unless the resin passes through the air, but the organic layer is damaged by the stress generated when the resin is cured, so that the original characteristics are deteriorated. Therefore, it has not been put into practical use.
JP 2003-338629 A

For use in the atmosphere, it is essential that all devices having organic semiconductors be protected from exposure to the organic semiconductor. Therefore, an object of the present invention is to provide a method for manufacturing an organic TFT in which the organic semiconductor is not exposed to the atmosphere and the characteristics are not deteriorated. It is another object of the present invention to provide a method for manufacturing a low-cost organic TFT that does not depend on an expensive dedicated device. It is another object of the present invention to provide a manufacturing method at a low temperature so that the device size can be reduced and thermal decomposition of the material does not become a problem. It is another object of the present invention to provide a semiconductor device that is light and flexible and exhibits good operating characteristics.

The inventor provides a gate electrode on a substrate, a gate insulating film on the gate electrode, a source electrode and a drain electrode on the gate insulating film, and an organic semiconductor so as to cover ends of the source electrode and the drain electrode. It has been found that the above problems can be solved by providing a film, a protective film on the organic semiconductor film, and a sealing material on the protective film. In addition, an organic semiconductor film is provided over the gate insulating film, a source electrode and a drain electrode are provided so as to cover an end portion of the organic semiconductor film, a protective film is provided over the organic semiconductor film, and a sealing material is provided over the protective film. It was found that the above-mentioned problems can be solved as a structure. As a result, the protective film provided on the organic semiconductor film can relieve stress generated when the sealing material made of resin is cured. In addition, the organic semiconductor film can be protected from water and oxygen by the sealing material.

An organic semiconductor device of the present invention includes a substrate having an insulating surface, an organic semiconductor element including an organic semiconductor film provided on the substrate, a protective film covering the organic semiconductor film, and a protective film provided on the protective film And a sealing material formed.

One of the organic semiconductor devices of the present invention includes a first conductive film provided on an insulating surface, an insulating film provided on the first conductive film, and a second conductive film provided on the insulating film. A conductive film and a third conductive film; an organic semiconductor film provided so as to cover a part of the insulating film; and an end of the second conductive film and the third conductive film; and the organic semiconductor film A protective film provided on the protective film and a sealing material provided on the protective film.

An organic semiconductor device of the present invention includes a first conductive film provided on an insulating surface, an insulating film provided on the first conductive film, and an organic semiconductor film provided on the insulating film A second conductive film and a third conductive film provided so as to cover an end portion of the organic semiconductor film, a protective film provided so as to cover at least the organic semiconductor film, and on the protective film And a sealing material provided.

According to one method for manufacturing an organic semiconductor device of the present invention, an organic semiconductor element having an organic semiconductor film on a surface is formed, a protective film is formed on the organic semiconductor film, and a sealing material is formed on the protective film. It is characterized by that.

According to one method for manufacturing an organic semiconductor device of the present invention, a first conductive film is formed over a substrate having an insulating surface, an insulating film is formed over the first conductive film, and a second conductive film is formed over the insulating film. And forming an organic semiconductor film so as to cover a part of the insulating film and an end of the second conductive film and the third conductive film, and forming the organic semiconductor film. A protective film is formed on the film, and a sealing material is formed on the protective film.

According to one method for manufacturing an organic semiconductor device of the present invention, a first conductive film is formed over a substrate having an insulating surface, an insulating film is formed over the first conductive film, and the organic semiconductor is formed over the insulating film. Forming a film, forming a second conductive film and a third conductive film so as to cover an end of the organic semiconductor film, forming a protective film so as to cover the organic semiconductor film, and over the protective film A sealing material is formed.

In the above manufacturing method, the organic semiconductor is formed and heated at 100 to 200 ° C. under atmospheric pressure or reduced pressure.

Further, in the above manufacturing method, a protective film is formed on the organic semiconductor film, a sealing material is formed on the protective film, the organic semiconductor film, the protective film, and the sealing material are thermocompression bonded, The sealing material is cured.

In the organic semiconductor device and the method for manufacturing the organic semiconductor device, the protective film is in a range of 0.01 mm to 0.5 mm (a range of 10 μm to 500 μm), and preferably has flexibility. Further, it may be a film or a sheet. Further, the protective film preferably has sealing properties, moisture resistance, insulation properties, and chemical resistance. Specific examples include polyimide, polyester, polyethylene, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyether sulfone (PES), and polycarbonate (PC).

For forming the protective film, a coating method, a spin coating method, a bar coating method, a solution casting method, a dipping method, a screen printing method, a roll coater method, or a droplet discharge method can be used. In the case of using a highly viscous raw material, it is preferable to use a droplet discharge method, a spin coating method, or a dip method. Moreover, when using a film or a sheet-like thing, it can bond and form. You may heat at the time of bonding.

In the organic semiconductor device and the method for manufacturing the organic semiconductor device, the resin sealing material preferably has adhesion, sealing, moisture resistance, insulating properties, and chemical resistance. Specific examples include epoxy resins, urethane resins, emulsion resins, synthetic rubber resins, and modified acrylate resins.

Examples of the method for forming the sealing material include a coating method, a spin coating method, a bar coating method, a solution casting method, a dipping method, a screen printing method, a roll coater method, and a droplet discharge method. In the case of forming using a highly viscous raw material, a droplet discharge method, a spin coating method, or a dip method can also be used.

Examples of the method of curing the resin include a method using a resin that is cured by applying heat, a method using a resin that is cured by irradiating UV light, and a method using a resin that is cured by visible light. It is done.

By carrying out the present invention, the protective film provided on the organic semiconductor film as described above can relieve stress generated when the sealing material made of resin is cured. Therefore, in a device such as a TFT, High initial characteristics can be obtained. Further, the organic semiconductor film can be protected from water and oxygen by the sealing material, and the initial characteristics thereof are not deteriorated. Therefore, the reliability improvement by the sealing is expected. Since an organic material is used, a light and flexible device can be provided, and the device size can be reduced easily and inexpensively. In addition, the protective film and the sealing material can be obtained by using a coating method, spin coating method, bar coating method, solution casting method, dipping method, screen printing method, roll coater method, droplet discharge method, thermocompression bonding method, etc. Since it can be produced under atmospheric pressure, an apparatus for creating a vacuum state is not required, and the cost advantage is immeasurable.

Hereinafter, one embodiment of the present invention will be described. However, the present invention can be implemented in many different modes, and those skilled in the art can easily understand that the modes and details can be variously changed without departing from the spirit and scope of the present invention. Is done. Therefore, the present invention is not construed as being limited to the description of the embodiment.

(Embodiment 1)
In this embodiment, a method for forming an organic thin film transistor used as a semiconductor element in an organic semiconductor device will be described with reference to the drawings. As illustrated in FIG. 1, the gate electrode 102 is formed over the substrate 101, and the gate insulating film 103 is formed over the substrate 101 and the gate electrode 102. Next, the source electrode 104 a and the drain electrode 104 b are provided with the gate insulating film 103 interposed therebetween.

As the substrate 101, a film such as PET, PES, PEN, or acrylic, a sheet-like plastic substrate, a glass substrate such as barium borosilicate glass or aluminoborosilicate glass, a quartz substrate, a stainless steel substrate, a Si wafer, or the like can be used. . When a glass substrate or the like is used, an alkali metal or alkaline earth metal such as Na contained in the substrate is prevented from diffusing into the semiconductor film and adversely affecting the characteristics of the semiconductor element. If necessary, a single layer film or a laminated film of a silicon nitride film, a silicon oxide film, a silicon nitride oxide film, or a silicon oxynitride film may be formed as a base film.

As the gate electrode 102, an element such as Al, Ta, W, Ti, Mo, or Ag, an alloy material containing the element as a main component, or a stack of these materials can be used. Alternatively, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus (P) may be used. Other conductive pastes can also be used. The gate electrode 102 can be formed by a sputtering method, a spin coating method, an evaporation method, or the like. For pattern formation, a known photolithography process or a method of forming a conductive film by providing a mask at a desired place can be used. In addition, when a conductive paste or the like is used, it can be formed without using a mask by a screen printing method, a roll coater method, or a droplet discharge method.

In addition, as a conductive material used for forming the source electrode 104a and the drain electrode 104b, when the organic semiconductor material used is a p-type semiconductor, a work function is larger than that of the semiconductor film in order to obtain ohmic contact with the semiconductor film. It is desirable to use materials. Specific examples include gold, tungsten, and indium tin oxide. In the case where the organic semiconductor used is an n-type semiconductor, it is desirable to use a material having a work function smaller than that of the semiconductor film. Specific examples include aluminum, magnesium, calcium, and lithium. The source electrode 104a and the drain electrode 104b can be formed by a sputtering method, a spin coating method, an evaporation method, or the like. For pattern formation, a method of forming a conductive film by providing a mask at a desired place can be used. In addition, when a conductive paste or the like is used, it can be formed without using a mask by a screen printing method, a roll coater method, or a droplet discharge method.

The gate insulating film 103 can be formed by a CVD method, a sputtering method, a spin coating method, or an evaporation method. As the material of the insulating film, an organic compound such as silicon nitride oxide (SiON), silicon oxide film (SiO ₂ ), silicon nitride film (SiN), polyvinyl alcohol, polyvinyl phenol, polyimide, siloxane, polysilazane, or the like may be used. . Alternatively, an insulating film obtained by anodizing the gate electrode may be used. These multilayer films may also be used.

Then, an organic semiconductor film 105 is formed on the element substrate. As the organic semiconductor material, an organic molecular crystal or an organic polymer compound material may be used. Specific organic molecular crystals include polycyclic aromatic compounds, conjugated double bond compounds, carotenes, macrocyclic compounds or complexes thereof, phthalocyanines, charge transfer complexes (CT complexes), and the like. For example, anthracene, tetracene, pentacene, 6T (hexathiophene), TCNQ (tetracyanoquinodimethane), TTF (tetrathiafulvalene), TCNQ complex, DDPH (diphenylpicrylhydrazyl), dye, protein, PTCDA (3,4) Perylene tetracarboxylic acid derivatives such as NTDCA (1,4,5,8-naphthalene tetracarboxylic dianhydride) and the like, and naphthalene tetracarboxylic acid derivatives such as NTCDA (1,4,5,8-naphthalene tetracarboxylic dianhydride) and the like can be used. Specific examples of organic polymer compound materials include π-conjugated polymers, carbon nanotubes, polyvinyl pyridine, phthalocyanine metal complexes, iodine metal complexes, etc. Particularly, the skeleton is composed of conjugated double bonds. Is a π-conjugated polymer, polyacetylene, polyaniline, polypyrrole, polythienylene, polythiophene derivatives, poly (3-alkylthiophene), preferably using a polyparaphenylene derivative, or a polyparaphenylene vinylene derivative.

In addition, as a method for forming the organic semiconductor film 105, a method capable of forming a film having a uniform thickness on the element substrate may be used. The film thickness is 1 nm to 1000 nm, preferably 10 nm to 100 nm. As a specific method, an evaporation method, a coating method, a spin coating method, a bar coating method, a solution casting method, a dip method, a screen printing method, a roll coater method, or a droplet discharge method can be used.

In addition, as a pretreatment for forming the organic semiconductor film, a plasma treatment may be performed on the surface to be formed, or an insulating film for improving adhesion or an interface state may be formed. For example, a fluorine-based silane coupling agent (fluoroalkylsilane (FAS)) can be used, a material having a fluorocarbon chain (fluorine-based resin), an organic silane such as octadecyltrimethoxysilane, a polyimide film, or the like can be formed.

Further, heat treatment may be performed after the formation of the organic semiconductor film. For example, it can heat at 100-200 degreeC under atmospheric pressure or pressure reduction. Thus, impurities such as water and oxygen contained in the organic semiconductor film can be removed, and adhesion between the organic semiconductor film 105 and the source electrode 104a, the drain electrode 104b, and the gate insulating film 103 can be improved. Can do. In addition, leakage current when the TFT to be manufactured is off can be reduced.

For pattern formation, a method of forming a film of the organic semiconductor film 105 by providing a mask of metal or the like in advance at a desired place can be used. A known photolithography process may be used as long as the organic semiconductor film 105 is not damaged. In addition, a screen printing method, a roll coater method, or a droplet discharge method can be used without using a mask.

Note that in this embodiment mode, the organic semiconductor film 105 is formed using pentacene, which is an organic material, by a vacuum evaporation method. The pattern is formed by providing a metal mask and then depositing it. Of course, for example, a chloroform solution of poly (3 alkylthiophene) which is an example of an organic polymer compound material may be applied by a droplet discharge method or a spin coating method.

As described above, a semiconductor element having an organic semiconductor film can be formed. In particular, a structure in which an organic semiconductor film is provided over a source electrode and a drain electrode as in this embodiment is referred to as a bottom contact structure.

Next, at least the organic semiconductor film 105 is covered with a protective film 106. The protective film 106 is in the range of 0.01 mm to 0.5 mm, and preferably has flexibility. Moreover, what has sealing performance, moisture resistance, insulation, and chemical resistance is preferable. Specific examples include polyimide, polyester, polyethylene, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyether sulfone (PES), and polycarbonate (PC).

In this embodiment mode, the protective film 106 is formed by heating and bonding a PET film. In addition, a droplet discharge method, a spin coating method, or a dip method may be used.

Then, the protective film 106 is covered with a sealing material 107 made of resin. The sealing material 107 is preferably one having adhesion, sealing, moisture resistance, insulation, and chemical resistance. Specific examples include epoxy resins, urethane resins, emulsion resins, synthetic rubber resins, and modified acrylate resins. Examples of the method for curing the resin include a method using a resin that cures by applying heat, a method that uses a resin that cures by irradiating UV light, and a method that uses a resin that cures by visible light. . As a formation method, formation using a droplet discharge method, a spin coating method, or a dipping method can be given.

In this embodiment, an epoxy resin is formed by a dip method, and then heated to be cured.

Finally, the organic semiconductor film 105 can be protected by a so-called sealing process by curing the sealing material 107. The protective film 106 has a function of relieving stress generated when the sealing material 107 is cured.

At this time, the range covered with the protective film 106 may be at least on the organic semiconductor film 105, but the range may be extended to the gate electrode 102, the source electrode 104a, and the drain electrode 104b. However, since these electrodes are provided with pads for applying a voltage or detecting a current, care must be taken not to completely cover the pads.

Further, an insulating film made of an organic material may be formed as the protective film 106. As an organic material used for the insulating film, polyimide, acrylic, polyamide, polyimide amide, polyvinyl alcohol, resist, benzocyclobutene, siloxane, or polysilazane can be used. The insulating film can be formed by a coating method, a spin coating method, a bar coating method, a solution casting method, a dipping method, a screen printing method, a roll coater method, a droplet discharge method, a thermocompression bonding method, or the like. In the case of using a highly viscous raw material, it is preferable to use a droplet discharge method, a spin coating method, or a dip method.

According to the present embodiment, as described above, the protective film 106 provided on the organic semiconductor film 105 can relieve stress generated when the sealing material made of resin is cured. High initial characteristics can be obtained. Further, since the organic semiconductor 105 film can be protected from water and oxygen by the sealing material 107 and its initial characteristics are not deteriorated, an improvement in reliability by sealing is expected. Further, since the protective film 106 and the sealing material 107 can be manufactured under atmospheric pressure, an apparatus for creating a vacuum state is unnecessary.

The semiconductor element having the bottom contact type structure as described above can be used as a circuit element such as a logic circuit or a memory circuit such as a DRAM in addition to a switching circuit for a liquid crystal element. A liquid crystal display device or a light-emitting device having an organic semiconductor element is referred to as an organic semiconductor device.

(Embodiment 2)
In this embodiment mode, different from Embodiment Mode 1, an organic thin film transistor having a top contact structure in which a source electrode and a drain electrode are formed after an organic semiconductor film is formed will be described with reference to FIGS. First, as in Embodiment Mode 1, the gate electrode 202 is formed over the substrate 201, and the gate insulating film 203 is formed over the substrate 201 and the gate electrode 202. Next, an organic semiconductor film 204 is formed through the gate insulating film 203. Embodiment 1 can be referred to for materials and manufacturing methods of the gate electrode 202 and the gate insulating film 203.

As an organic semiconductor material used for forming the organic semiconductor film 204, an organic molecular crystal or an organic polymer compound material may be used. Specific organic molecular crystals include polycyclic aromatic compounds, conjugated double bond compounds, carotenes, macrocyclic compounds or complexes thereof, phthalocyanines, electromigration complexes (CT complexes) and the like. For example, anthracene, tetracene, pentacene, 6T (hexathiophene), TCNQ (tetracyanoquinodimethane), TTF (tetrathiafulvalene), TCNQ complex, DDPH (diphenylpicrylhydrazyl), dye, protein, PTCDA (3, 4,9,10-perylenetetracarboxylic dianhydride) and other naphthalenetetracarboxylic acid derivatives such as NTCDA (1,4,5,8-naphthalenetetracarboxylic dianhydride) are used. it can. Specific examples of organic polymer compound materials include polymers such as π-conjugated polymers, carbon nanotubes, polyvinyl pyridine, phthalocyanine metal complexes, and iodine metal complexes. In particular, when polyacetylene, polyaniline, polypyrrole, polythienylene, polythiophene derivative, poly (3-alkylthiophene), polyparaphenylene derivative or polyparaphenylene vinylene derivative is used, which is a π-conjugated polymer whose skeleton is composed of conjugated double bonds preferable.

In addition, as a method for forming the organic semiconductor film 204, a method capable of forming a film having a uniform thickness on the element substrate may be used. As a specific method, an evaporation method, a coating method, a spin coating method, a bar coating method, a solution casting method, a dip method, a screen printing method, a roll coater method, or a droplet discharge method can be used. In addition, as a pretreatment for forming the organic semiconductor film, a plasma treatment may be performed on the surface to be formed, or an insulating film for improving adhesion or an interface state may be formed. Further, heat treatment may be performed after the formation of the organic semiconductor film. For example, it can heat at 100-200 degreeC under atmospheric pressure or pressure reduction. Thus, as described in Embodiment Mode 1, impurities such as water and oxygen contained in the organic semiconductor film 204 can be removed, and the source electrode 205a, the drain electrode 205b, the gate insulating film 203, and the organic semiconductor film 204 can be removed. Adhesion can be improved, and leakage current when the TFT to be manufactured is off can be reduced.

Note that in this embodiment mode, the organic semiconductor film 204 is formed by flying pentacene, which is an organic material, by a vacuum evaporation method. The pattern is formed by providing a metal mask and then depositing it. Of course, for example, a chloroform solution of poly (3 alkylthiophene) which is an example of an organic polymer compound material may be applied by a droplet discharge method or a spin coating method.

Thereafter, a source electrode 205a and a drain electrode 205b are further formed. As a film forming method, a method capable of forming a film having a uniform thickness on the element substrate may be used. Embodiment 1 can be referred to for the material and manufacturing method of the electrode. Here, a 1 wt% aqueous dispersion of a complex of poly (ethylenedioxytheophene), which is a conductive polymer, and polystyrenesulfonic acid is discharged by a droplet discharge method.

As described above, a semiconductor element having an organic semiconductor film can be formed. In particular, a structure in which a source electrode and a drain electrode are provided over an organic semiconductor film as in this embodiment is referred to as a top contact type structure.

Next, the organic semiconductor film 204 is covered with a protective film 206. Embodiment 1 can be referred to for the structure and manufacturing method of the protective film 206.

Then, at least the protective film 206 is covered with a sealing material 207 made of resin and cured. Embodiment 1 can be referred to for the type and manufacturing method of the resin.

According to the present embodiment, as described above, the protective film 206 provided on the organic semiconductor film 204 can relieve stress generated when the sealing material 207 made of resin is cured. , High initial characteristics can be obtained. In addition, since the organic semiconductor film 204 can be protected from water and oxygen by the sealing material 207 and its initial characteristics are not deteriorated, an improvement in reliability by sealing is expected. Further, since the protective film 206 and the sealing material 207 can be manufactured under atmospheric pressure, an apparatus for creating a vacuum state is not necessary.

The semiconductor element having the top contact type structure as described above can be used as, for example, a circuit element such as a logic circuit or a memory circuit such as a DRAM in addition to a switching circuit for a liquid crystal element. A liquid crystal display device or a light-emitting device having an organic semiconductor element is referred to as an organic semiconductor device.

(Embodiment 3)
In this embodiment, a light-emitting device is described as an organic semiconductor device formed using the bottom contact transistor described in Embodiment 1.

FIG. 3 shows the entire panel of the light emitting device. The panel includes a pixel portion and may further include a peripheral driver circuit or a part thereof. The pixel portion has a plurality of pixel regions 301, and FIG. 4 shows an equivalent circuit diagram of a part of the pixel region 301. The pixel region includes a switching transistor 402, a driving transistor 403, a light emitting element 404 connected to the driving transistor, and a capacitor 405 for holding a gate-source voltage of the driving transistor. There is no need to provide the capacitor when the gate capacitance of the driving transistor can compensate. In this embodiment mode, a mode having two transistors in the pixel region is described; however, a mode having three or more transistors may be used. For example, an erasing transistor may be provided in order to discharge the voltage accumulated in the capacitor. Since the erasing transistor can start the lighting period at the same time as or immediately after the start of the writing period without waiting for signal writing to all pixels, the duty ratio can be improved.

Further, FIG. 5 shows a cross-sectional view of the dotted line region 401, that is, a driving transistor and a light emitting element. First, as in Embodiment Mode 1, a base layer 511, a gate electrode 501, a gate insulating film 502 provided so as to cover the gate electrode 501, and a source provided via the gate insulating film 502 on the insulating surface An element substrate 500 on which an electrode 503a and a drain electrode 503b are formed is prepared. Embodiment 1 can be referred to for materials and manufacturing methods of the gate electrode 501, the gate insulating film 502, the source electrode 503a, and the drain electrode 503b. A pixel electrode 504 is provided so as to be electrically connected to the drain electrode 503b.

In this embodiment, the pixel electrode 504 has a light-transmitting property because a light-emitting element is used as a display element and light from the light-emitting element is extracted from the pixel electrode 504 side. For example, the pixel electrode 504 is made of indium tin oxide (ITO), an indium zinc oxide (IZO) formed using a target in which indium oxide is mixed with 2 to 20 wt% zinc oxide (ZnO), and oxidized. It can be formed using ITO-SiOx (referred to as ITSO for convenience) in which indium is mixed with ₂ to 20 wt% silicon oxide (SiO ₂ ).

Next, an insulating layer 505 that covers an end portion of the pixel electrode 504 is formed. As the insulating layer 505, a photosensitive organic material (such as acrylic or polyimide), siloxane, or the like may be used.

An electroluminescent layer 506 is provided so as to cover the pixel electrode 504, and a common electrode 507 is provided on the electroluminescent layer 506. The common electrode 507 can be formed of an electrode material having a light-transmitting property or a non-light-transmitting property. In the case of having a light-transmitting property, an upper emission type light emitting device in which light from the electroluminescent layer 506 is emitted upward, or a dual emission type light emitting device in which light is emitted downward can be formed.

The material of the electroluminescent layer 506 can be used as an organic material (including a low molecule or a polymer) or a composite material of an organic material and an inorganic material. The electroluminescent layer 506 can be formed by a droplet discharge method, a coating method, or an evaporation method. The polymer material is preferably a droplet discharge method or a coating method, and the low molecular material is preferably a vapor deposition method. In this embodiment mode, a low molecular material is formed as the electroluminescent layer 506 by a vacuum evaporation method.

Note that the molecular exciton formed by the electroluminescent layer 506 can be a singlet excited state or a triplet excited state. The ground state is usually a singlet state, and light emission from the singlet excited state is called fluorescence. In addition, light emission from the triplet excited state is called phosphorescence. The light emission from the electroluminescent layer 506 includes the case where either excited state contributes. Furthermore, fluorescence and phosphorescence may be used in combination, and either fluorescence or phosphorescence can be selected according to the emission characteristics of each RGB (emission luminance, lifetime, etc.).

The detailed electroluminescent layer 506 is in the order of HIL (hole injection layer), HTL (hole transport layer), EML (light emitting layer), ETL (electron transport layer), and EIL (electron injection layer) in this order from the pixel electrode 504 side. Are stacked. Note that the electroluminescent layer 506 can have a single-layer structure or a mixed structure in addition to a stacked structure.

Specifically, CuPc or PEDOT is used as HIL, α-NPD is used as HTL, BCP or Alq _{3 is used} as ETL, and BCP: Li or CaF ₂ is used as EIL. Further, for example, EML may be Alq ₃ doped with a dopant (such as DCM in the case of R, DMQD in the case of G) corresponding to the emission colors of R, G, and B.

Note that the electroluminescent layer 506 is not limited to the above materials. For example, instead of CuPc or PEDOT, an oxide such as molybdenum oxide (MoOx: x = 2 to 3) and α-NPD or rubrene can be co-evaporated to improve the hole injection property. A benzoxazole derivative (shown as BzOS) may be used for the electron injection layer.

Thereafter, an organic semiconductor film 508 is formed on the element substrate. As the organic semiconductor material, an organic molecular crystal or an organic polymer compound material may be used. Specific organic molecular crystals include polycyclic aromatic compounds, conjugated double bond compounds, carotenes, macrocyclic compounds or complexes thereof, phthalocyanines, electromigration complexes (CT complexes) and the like. For example, anthracene, tetracene, pentacene, 6T (hexathiophene), TCNQ (tetracyanoquinodimethane), TTF (tetrathiafulvalene), TCNQ complex, DDPH (diphenylpicrylhydrazyl), dye, protein, PTCDA (3, 4,9,10-perylenetetracarboxylic dianhydride) and other naphthalenetetracarboxylic acid derivatives such as NTCDA (1,4,5,8-naphthalenetetracarboxylic dianhydride) are used. it can. Specific examples of organic polymer compound materials include polymers such as π-conjugated polymers, carbon nanotubes, polyvinyl pyridine, phthalocyanine metal complexes, and iodine metal complexes. In particular, when polyacetylene, polyaniline, polypyrrole, polythienylene, polythiophene derivative, poly (3-alkylthiophene), polyparaphenylene derivative or polyparaphenylene vinylene derivative is used, which is a π-conjugated polymer whose skeleton is composed of conjugated double bonds preferable.

As a film forming method, a method capable of forming a film having a uniform thickness on the element substrate may be used. As a specific method, an evaporation method, a coating method, a spin coating method, a bar coating method, a solution casting method, a dip method, a screen printing method, a roll coater method, or a droplet discharge method may be used.

At this time, when the electroluminescent layer 506, the common electrode 507, and the organic semiconductor film 508 are formed by an evaporation method, they can be formed using each metal mask. Therefore, any of the electroluminescent layer 506, the common electrode 507, and the organic semiconductor film 508 may be manufactured first.

Next, the organic semiconductor film 508 is covered with a protective film 509. Embodiment 1 can be referred to for the structure and manufacturing method of the protective film.

Then, at least the protective film 509 is covered with a sealing material 510 made of resin and cured. Embodiment 1 can be referred to for the type and manufacturing method of the resin.

In general, a light emitting element made of an EL layer has a step of about 0.5 to 2 μm. However, the protective film 509 and the sealing material 510 made of resin each have a thickness in the range of 10 μm to 500 μm, which is larger than the step of the light emitting element. Largely, the protective film 509 and the sealing material 510 made of resin serve as a buffering agent, and thus can be covered uniformly.

A bottom emission light-emitting device that emits light from the pixel electrode 504 side can be formed using the semiconductor element as described above.

In this example, a method for manufacturing a bottom contact type organic TFT element using the protection method of the present invention will be described.

Based on the first embodiment, a tungsten film was formed on a quartz substrate by a sputtering method and processed into a desired shape to provide a gate electrode. A gate insulating film made of silicon nitride oxide (SiON) was provided on the gate electrode by plasma CVD. Next, a source electrode and a drain electrode made of tungsten were formed on the gate insulating film by sputtering.

Thereafter, an organic semiconductor film was provided between the source electrode and the drain electrode to obtain a bottom contact type organic TFT element. As the organic semiconductor, pentacene was used and a film of 50 nm was formed by vacuum deposition. At this time, a pattern was formed by vapor deposition using a metal mask. Further, the channel length of the organic TFT was 100 μm and the channel width was 8000 μm.

Next, a PET film having a thickness of about 30 μm was used as a protective film to cover the organic semiconductor film. And the epoxy resin hardened | cured by heating was used as a sealing material, and the sealing on a protective film was performed. As the sealing material, a sheet-like epoxy resin having a thickness of about 20 μm was used, and the substrate, the protective film, and the sealing material were brought into close contact with each other by being superposed on the substrate and thermocompression bonded at 90 ° C.

Finally, the substrate was placed on a hot plate, heated at 100 ° C. for 60 minutes, and the resin was cured to complete sealing.

[Comparative Example 1]
As a comparison with Example 1, this Comparative Example 1 was provided in order to investigate changes in characteristics of the organic TFT element depending on the presence or absence of a protective film on the organic semiconductor film.

Based on the first embodiment, a tungsten film was formed on a quartz substrate by a sputtering method and processed into a desired shape to provide a gate electrode. A gate insulating film made of silicon nitride oxide (SiON) was provided on the gate electrode by plasma CVD. Next, a source electrode and a drain electrode made of tungsten were formed on the gate insulating film by sputtering.

Thereafter, an organic semiconductor film was provided between the source electrode and the drain electrode to obtain a bottom contact type organic TFT element. As the organic semiconductor, pentacene was used and a film of 50 nm was formed by vacuum deposition. At this time, a pattern was formed by vapor deposition using a metal mask. Further, the channel length of the organic TFT was 100 μm and the channel width was 8000 μm.

Next, for comparison with Example 1, the protective film used in Example 1 is not provided on the organic semiconductor film, but an epoxy resin that is cured by heating is used as a sealing material, and the organic semiconductor film is formed. Covered and sealed. As the sealing material, a sheet-like epoxy resin having a thickness of about 20 μm was used, and the substrate and the sealing material were brought into close contact with each other by being superposed on the substrate and thermocompression bonded at 90 ° C.

Finally, the substrate was placed on a hot plate, heated at 100 ° C. for 60 minutes, and the resin was cured to complete sealing.

In this example, the Vg-Id characteristics of the organic TFT elements produced by the methods of Example 1 and Comparative Example 1 were measured.

In FIG.
Condition (1) Condition of organic TFT element produced by the method of Example 1 (2) Current of the drain electrode when a voltage of Vd = −10 V was applied to the organic TFT element produced by the method of Comparative Example 1. The result of the Vg-Id characteristic which measured the gate voltage is shown. From FIG. 6, comparing (1) and (2), if the organic semiconductor film is covered only with the sealing material, the organic semiconductor film is damaged by the stress generated when the sealing material is cured, It can be seen that the ON current decreases. That is, it can be seen that by inserting the protective film between the organic semiconductor film and the sealing material, the stress is relieved and damage to the organic semiconductor film can be prevented.

[Comparative Example 2]
As a comparison with Example 1, the deterioration of the characteristics of the organic TFT element with time when the protection method of the present invention was used and when it was not used was examined.

Based on the first embodiment, a tungsten film was formed on a quartz substrate by a sputtering method and processed into a desired shape to provide a gate electrode. A gate insulating film made of silicon nitride oxide (SiON) was provided on the gate electrode by plasma CVD. Next, a source electrode and a drain electrode made of tungsten were formed on the gate insulating film by sputtering.

Thereafter, an organic semiconductor film was provided between the source electrode and the drain electrode to obtain a bottom contact type organic TFT element. As the organic semiconductor, pentacene was used and a film of 50 nm was formed by vacuum deposition. At this time, a pattern was formed by vapor deposition using a metal mask. Further, the channel length of the organic TFT was 100 μm and the channel width was 8000 μm.

Finally, for comparison with Example 1, the protective film and the sealing material used in Example 1 were not provided on the organic semiconductor film, but were heated at 90 ° C. and heated at 100 ° C. on a hot plate at 60 ° C. Minute heating was performed.

In this example, the deterioration of the Vg-Id characteristics with time of the organic TFT element in which the organic semiconductor film was protected using the method of Example 1 and the organic TFT element produced by the method of Comparative Example 2 was measured.

In FIG.
Conditions (1) Organic TFT element conditions after being manufactured by the method of Example 1 and then left in the air for 300 hours (2) Organics after being prepared by the method of Comparative Example 2 and then left in the air for 300 hours The result of the Vg-Id characteristic which measured the electric current and gate voltage of the drain electrode when the voltage of Vd = -10V in a TFT element is applied is shown. From FIG. 7, comparing (1) and (2), it can be seen that the ON current of the Vg-Id characteristic can be prevented by covering the organic semiconductor film with a protective film and a sealing material. From the above, it can be seen that by covering the organic semiconductor film with a film-like protective film and a sealing material, the organic semiconductor can be protected from deterioration due to exposure to the air and exposure to water and oxygen. .

In this example, a method for manufacturing a top contact type organic TFT element using the protection method of the present invention will be described.

Based on the second embodiment, a tungsten film was formed on a quartz substrate by sputtering, and processed into a desired shape to provide a gate electrode. A gate insulating film made of silicon nitride oxide (SiON) was provided on the gate electrode by plasma CVD. An organic semiconductor film was provided on the gate insulating film, and a source electrode and a drain electrode made of tungsten were provided on the organic semiconductor film by sputtering to obtain a top contact type organic TFT element. As the organic semiconductor, pentacene was used and a film of 50 nm was formed by vacuum deposition. Further, the channel length of the organic TFT was 100 μm and the channel width was 8000 μm.

Next, a PET film having a thickness of about 30 μm was used as a protective film to cover the organic semiconductor film. And the epoxy resin hardened | cured by heating was used as a sealing material, and the sealing on a protective film was performed. As the sealing material, a sheet-like epoxy resin having a thickness of about 20 μm was used, and the substrate and the sealing material were brought into close contact with each other by being superposed on the substrate and thermocompression bonded at 90 ° C.

Finally, the substrate was placed on a hot plate, heated at 100 ° C. for 60 minutes, and the resin was cured to complete sealing.

[Comparative Example 3]
As a comparison with Example 4, the deterioration of the characteristics of the organic TFT element with time when the protection method of the present invention was used and when it was not used was examined.

Based on the second embodiment, a tungsten film was formed on a quartz substrate by sputtering, and processed into a desired shape to provide a gate electrode. A gate insulating film made of silicon nitride oxide (SiON) was provided on the gate electrode by plasma CVD. An organic semiconductor film was provided on the gate insulating film, and a source electrode and a drain electrode made of tungsten were provided on the organic semiconductor film by sputtering to obtain a top contact type organic TFT element. As the organic semiconductor, pentacene was used and a film of 50 nm was formed by vacuum deposition. Further, the channel length of the organic TFT was 100 μm and the channel width was 8000 μm.

Finally, for comparison with Example 4, the protective film and the sealing material used in Example 4 were not provided on the organic semiconductor film, and the thermocompression bonding at 90 ° C. and 60 ° C. at 100 ° C. on a hot plate were performed. Minute heating was performed.

In this example, the deterioration of the Vg-Id characteristics with time of the organic TFT element in which the organic semiconductor film was protected using the method of Example 4 and the organic TFT element manufactured by the method of Comparative Example 3 was measured.

In FIG.
Conditions (1) Organic TFT element conditions immediately after being produced by the method of Example 4 (2) Organic TFT element conditions after being produced by the method of Example 4 and then left in the atmosphere for 120 hours (3) Comparative Example The result of Vg-Id characteristics obtained by measuring the current of the drain electrode and the gate voltage when a voltage of Vd = -10 V was applied to the organic TFT element after being produced by the method 3 and left in the atmosphere for 120 hours. Indicates. From FIG. 8, comparing (1), (2), and (3), it can be seen that the ON current of the Vg-Id characteristic can be prevented by covering the organic semiconductor film with a protective film and a sealing material. From the above, it can be seen that by covering the organic semiconductor film with a film-like protective film and a sealing material, the organic semiconductor can be protected from deterioration due to exposure to the air and exposure to water and oxygen. .

FIG. 9 shows an EL module in which a display panel 1001 and a circuit board 1002 are combined. For example, a control circuit 1003 and a signal dividing circuit 1004 are formed on the circuit board 1002.

A pixel portion 1005 provided with a light emitting element in each pixel, a scanning line driver circuit 1006, and a signal line driver circuit 1007 for supplying a video signal to a selected pixel are provided. The TFT configuration of this pixel portion is the same as in the first to third embodiments. The scan line driver circuit 1006 and the signal line driver circuit 1007 can be formed using Si-based TFTs, a COG (Chip On Glass) method, or the like.

With this EL module, an EL television receiver can be completed. FIG. 10 is a block diagram showing the main configuration of an EL television receiver. A tuner 1101 receives a video signal and an audio signal. The video signal includes a video signal amplifying circuit 1102, a video signal processing circuit 1103 that converts a signal output from the video signal into a color signal corresponding to each color of red, green, and blue, and the video signal as input specifications of the driver IC. Processing is performed by the control circuit 1104 for conversion. The control circuit 1104 outputs signals to the scanning line side and the signal line side, respectively. In the case of digital driving, a signal dividing circuit 1105 may be provided on the signal line side and an input digital signal may be divided into m pieces and supplied.

Of the signals received by the tuner 1101, the audio signal is sent to the audio signal amplifier circuit 1106, and the output is supplied to the speaker 1108 through the audio signal processing circuit 1107. The control circuit 1109 receives control information on the receiving station (reception frequency) and volume from the input unit 1110 and sends a signal to the tuner 1101 and the audio signal processing circuit 1107.

As shown in FIG. 11, an EL module can be incorporated into a housing 1201 to complete a television receiver. A display screen 1202 is formed by the EL module. In addition, a speaker 1203, an operation switch 1204, and the like are provided as appropriate.

This television receiver includes the above-described TFT including a display panel 1001. In the present invention, since the organic semiconductor film can be protected from the stress generated when water or oxygen and the resin are cured, high initial characteristics can be obtained in a device such as a TFT. Further, the characteristics are not deteriorated by the sealing material. Further, the device size can be reduced easily and inexpensively, and the reliability by sealing can be improved.

Of course, the present invention is not limited to a television receiver, and is applied to various uses as a display medium of a particularly large area such as a monitor of a personal computer, an information display board in a railway station or airport, an advertisement display board in a street, etc. can do.

FIG. 12A shows a module in which a display panel 1301 and a printed board 1302 are combined. In the display panel 1301, the TFT described in Embodiments 1 to 3 is formed in each pixel of the pixel portion 1303. Each pixel is provided with a light emitting element, and includes a first scan line driver circuit 1304, a second scan line driver circuit 1305, and a signal line driver circuit 1306 for supplying a video signal to the selected pixel.

The printed circuit board 1302 includes a controller 1307, a central processing unit (CPU) 1308, a memory 1309, a power supply circuit 1310, an audio processing circuit 1311, a transmission / reception circuit 1312, and the like. The printed board 1302 and the display panel 1301 are connected by a flexible wiring board (FPC) 1313. The printed wiring board 1313 may be provided with a capacitor, a buffer circuit, or the like to prevent noise from being applied to the power supply voltage or the signal or the rise of the signal from being slowed. Further, the scan line driver circuits 1304 and 1305 and the signal line driver circuit 1306 can be mounted on the display panel 1301 by a COG method. A controller 1307, an audio processing circuit 1311, a memory 1309, a CPU 1308, a power supply circuit 1310, and the like can also be mounted on the display panel 1301 using a COG method. The scale of the printed circuit board 1302 can be reduced by the COG method.

Various control signals are input and output through an interface (I / F) unit 1314 provided on the printed circuit board 1302. In addition, an antenna port 1315 for transmitting and receiving signals to and from the antenna is provided on the printed circuit board 1302.

FIG. 12B shows a block diagram of the module shown in FIG. This module includes a VRAM 1316, a DRAM 1317, a flash memory 1318, and the like as the memory 1309. The VRAM 1316 stores image data to be displayed on the panel, the DRAM 1317 stores image data or audio data, and the flash memory stores various programs.

The power supply circuit 1310 supplies power for operating the display panel 1301, the controller 1307, the CPU 1308, the sound processing circuit 1311, the memory 1309, and the transmission / reception circuit 1312. Depending on the panel specifications, the power supply circuit 1310 may be provided with a current source.

The CPU 1308 includes a control signal generation circuit 1320, a decoder 1321, a register 1322, an arithmetic circuit 1323, a RAM 1324, an interface 1319 for the CPU 1308, and the like. Various signals input to the CPU 1308 via the interface 1319 are temporarily held in the register 1322 and then input to the arithmetic circuit 1323, the decoder 1321, and the like. The arithmetic circuit 1323 performs an operation based on the input signal and designates a place to send various commands. On the other hand, the signal input to the decoder 1321 is decoded and input to the control signal generation circuit 1320. The control signal generation circuit 1320 generates a signal including various instructions based on the input signal, and a location specified in the arithmetic circuit 1323, specifically, a memory 1309, a transmission / reception circuit 1312, an audio processing circuit 1311, a controller 1307, and the like. Send to.

The memory 1309, the transmission / reception circuit 1312, the audio processing circuit 1311, and the controller 1307 operate according to the received commands. The operation will be briefly described below.

A signal input from the input unit 1325 is sent to the CPU 1308 mounted on the printed circuit board 1302 via the I / F (interface) 1314. The control signal generation circuit 1320 converts the image data stored in the VRAM 1316 into a predetermined format in accordance with a signal sent from the input device 1325 such as a pointing device or a keyboard, and sends it to the controller 1307.

The controller 1307 performs data processing on a signal including image data sent from the CPU 1308 in accordance with the specifications of the panel and supplies the processed signal to the display panel 1301. The controller 1307 generates an Hsync signal, a Vsync signal, a clock signal CLK, an AC voltage (ACCont), and a switching signal L / R based on the power supply voltage input from the power supply circuit 1310 and various signals input from the CPU 1308. And supplied to the display panel 1301.

The transmission / reception circuit 1312 processes signals transmitted / received as radio waves in the antenna 1328. Specifically, high-frequency signals such as isolators, band-pass filters, VCOs (Voltage Controlled Oscillators), LPFs (Low Pass Filters), couplers, and baluns are used. Includes circuitry. A signal including audio information among signals transmitted and received in the transmission / reception circuit 1312 is sent to the audio processing circuit 1311 in accordance with a command from the CPU 1308.

A signal including audio information sent in accordance with a command from the CPU 1308 is demodulated into an audio signal in the audio processing circuit 1311 and sent to the speaker 1327. The audio signal sent from the microphone 1326 is modulated by the audio processing circuit 1311 and sent to the transmission / reception circuit 1312 in accordance with a command from the CPU 1308.

The controller 1307, the CPU 1321, the power supply circuit 1310, the sound processing circuit 1311, and the memory 1309 can be mounted as a package of this embodiment. This embodiment can be applied to any circuit other than a high frequency circuit such as an isolator, a band pass filter, a VCO, an LPF, a coupler, and a balun.

A display panel 1301 includes the TFTs described in Embodiments 1 to 3 in each pixel. In the present invention, since the organic semiconductor film can be protected from the stress generated when water or oxygen and the resin are cured, high initial characteristics can be obtained in a device such as a TFT. Further, the characteristics are not deteriorated by the sealing material. Further, the device size can be reduced easily and inexpensively, and the reliability by sealing can be improved.

FIG. 13 shows one mode of a mobile phone including the module of the seventh embodiment. The display panel 1401 is incorporated in the housing 1430 so as to be detachable. The shape and dimensions of the housing 1430 can be changed as appropriate in accordance with the size of the display panel 1401. The housing 1430 to which the display panel 1401 is fixed is fitted to the printed board 1431 and assembled as a module.

The display panel 1401 is connected to the printed board 1431 through the FPC 1413. A signal processing circuit 1435 including a speaker 1432, a microphone 1433, a transmission / reception circuit 1434, a CPU, a controller, and the like is formed over the printed board 1431. Such a module is combined with the input means 1436 and the battery 1437 and stored in the housing 1439. The pixel portion of the display panel 1401 is arranged so that it can be seen from an opening window formed in the housing 1439.

A display panel 1401 includes the TFTs described in Embodiments 1 to 6 in each pixel. In the present invention, since the organic semiconductor film can be protected from the stress generated when water or oxygen and the resin are cured, high initial characteristics can be obtained in a device such as a TFT. Further, the characteristics are not deteriorated by the sealing material. Further, the device size can be reduced easily and inexpensively, and the reliability by sealing can be improved.

The mobile phone according to the present embodiment can be transformed into various modes according to the function and application. For example, the above-described effects can be obtained even when a plurality of display panels are provided, or the housing is divided into a plurality of cases and is opened and closed by a hinge.

It is sectional drawing which showed the organic thin-film transistor of this invention. It is sectional drawing which showed the organic thin-film transistor of this invention. It is a panel whole view of the light-emitting device of this invention. 3 is an equivalent circuit diagram of a pixel included in the light emitting device of the present invention. FIG. It is sectional drawing which showed the light-emitting device of this invention. It is a graph which shows the experimental result regarding this invention. It is a graph which shows the experimental result regarding this invention. It is a graph which shows the experimental result regarding this invention. It is an example of TV which has TFT of this invention in a pixel. It is an example of TV which has TFT of this invention in a pixel. It is an example of TV which has TFT of this invention in a pixel. It is an example of a mobile phone having the TFT of the present invention in a pixel. It is an example of a mobile phone having the TFT of the present invention in a pixel.

Explanation of symbols

DESCRIPTION OF SYMBOLS 101 Substrate 102 Gate electrode 103 Gate insulating film 104 Source electrode and drain electrode 105 Organic semiconductor film 106 Protective film 107 Sealing material 201 Substrate 202 Gate electrode 203 Gate insulating film 204 Organic semiconductor film 205 Electrode 206 Protective film 207 Sealing material 301 Pixel Region 401 Dotted region 402 Switching transistor 403 Driving transistor 404 Light emitting element 405 Capacitor element 500 Element substrate 501 Gate electrode 502 Gate insulating film 503 Source electrode and drain electrode 504 Pixel electrode 505 Insulating layer 506 Electroluminescent layer 507 Common electrode 508 Organic semiconductor Film 509 Protective film 510 Sealing material 511 Base layer 1001 Display panel 1002 Circuit board 1003 Control circuit 1004 Signal dividing circuit 1005 Pixel portion 1006 Scan line driver circuit 1007 Line driver circuit 1008 Connection wiring 1101 Tuner 1102 Video signal amplifier circuit 1103 Video signal processor circuit 1104 Control circuit 1105 Signal divider circuit 1106 Audio signal amplifier circuit 1107 Audio signal processor circuit 1108 Speaker 1109 Control circuit 1110 Input unit 1111 Signal line driver circuit 1112 Scanning Line driving circuit 1201 Case 1202 Display screen 1203 Speaker 1204 Operation switch 1301 Display panel 1302 Printed circuit board 1303 Pixel portion 1304 First scanning line driving circuit 1305 Second scanning line driving circuit 1306 Signal line driving circuit 1307 Controller 1308 CPU
1309 Memory 1310 Power supply circuit 1311 Audio processing circuit 1312 Transmission / reception circuit 1313 FPC
1314 I / F unit 1315 Antenna port 1316 VRAM
1317 DRAM
1318 Flash memory 1319 Interface 1320 Control signal generation circuit 1321 Decoder 1322 Register 1323 Arithmetic circuit 1324 RAM
1325 Input means 1326 Microphone 1327 Speaker 1328 Antenna 1401 Display panel 1413 FPC
1430 Housing 1431 Printed circuit board 1432 Speaker
1433 Microphone 1434 Transmission / reception circuit 1435 Signal processing circuit 1436 Input means 1437 Battery 1439 Case

Claims (12)

A substrate having an insulating surface;
An organic semiconductor element comprising an organic semiconductor film provided on the substrate;
A protective film covering the organic semiconductor film;
A sealing material provided on the protective film;
An organic semiconductor device comprising: A first conductive film provided on the insulating surface;
An insulating film provided on the first conductive film;
A second conductive film and a third conductive film provided on the insulating film;
An organic semiconductor film provided so as to cover a part of the insulating film and the end portions of the second conductive film and the third conductive film;
A protective film provided on the organic semiconductor film;
A sealing material provided on the protective film;
An organic semiconductor device comprising: A first conductive film provided on the insulating surface;
An insulating film provided on the first conductive film;
An organic semiconductor film provided on the insulating film;
A second conductive film and a third conductive film provided to cover an end of the organic semiconductor film;
A protective film provided to cover at least the organic semiconductor film;
A sealing material provided on the protective film;
An organic semiconductor device comprising: In any one of Claims 1 thru | or 3,
The organic semiconductor device, wherein the protective film includes any one of polyimide, polyester, polyethylene, polyethylene terephthalate, polyethylene naphthalate, polyether sulfone, and polycarbonate. In any one of Claims 1 thru | or 3,
The sealing material includes an epoxy resin, a urethane resin, an emulsion resin, a synthetic rubber resin, and a modified acrylate resin. Forming an organic semiconductor element having an organic semiconductor film on the surface;
Forming a protective film on the organic semiconductor film;
A manufacturing method of an organic semiconductor device, wherein a sealing material is formed on the protective film. Forming a first conductive film on a substrate having an insulating surface;
Forming an insulating film on the first conductive film;
Forming a second conductive film and a third conductive film on the insulating film;
Forming an organic semiconductor film so as to cover a part of the insulating film and the end portions of the second conductive film and the third conductive film;
Forming a protective film on the organic semiconductor film;
A manufacturing method of an organic semiconductor device, wherein a sealing material is formed on the protective film. Forming a first conductive film on a substrate having an insulating surface;
Forming an insulating film on the first conductive film;
Forming an organic semiconductor film on the insulating film;
Forming a second conductive film and a third conductive film so as to cover an end of the organic semiconductor film;
Forming a protective film to cover the organic semiconductor film;
A manufacturing method of an organic semiconductor device, wherein a sealing material is formed on the protective film. In any one of Claims 6 to 8,
A method for manufacturing an organic semiconductor device, wherein the organic semiconductor film is formed and heated at 100 to 200 ° C. under atmospheric pressure or reduced pressure. In any one of Claims 6 to 8,
A method for manufacturing an organic semiconductor device, wherein the organic semiconductor film, the protective film, and the sealing material are heat-pressed to cure the sealing material. In any one of Claims 6 to 10,
The method for manufacturing an organic semiconductor device, wherein the protective film includes any one of polyimide, polyester, polyethylene, polyethylene terephthalate, polyethylene naphthalate, polyether sulfone, and polycarbonate. In any one of Claims 6 to 10,
The method for manufacturing an organic semiconductor device, wherein the sealing material includes any one of an epoxy resin, a urethane resin, an emulsion resin, a synthetic rubber resin, and a modified acrylate resin.

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