JP2006128238A - Object treatment device and object treatment method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To accurately control the actions of a nozzle and a stage of an object treatment device which performs spraying to a wafer etc., so that the device may perform uniform spraying to the whole area of the treated surface of an object to be treated. <P>SOLUTION: The object treatment device which performs spraying on the object having a roughly circular flat surface to be treated is provided with a nozzle which performs spraying to the surface to be treated while moving between the central part and the outer peripheral end of the surface to be treated, so that the nozzle may face the surface to be treated of the object and a stage which rotates integrally with the object around the center of the surface to be treated while the object is placed on the stage. The device is also provided with a nozzle action control means which controls the moving speed and the moving locus of the nozzle and a stage action control means which controls the rotating speed of a stage. In addition, the device is also provided with a locus control means for controlling so that the spraying locus on the object formed by the actions of the nozzle and the stage may form a spiral locus starting from the center of the surface to be treated, and that, in addition, the peripheral speed and the pitch width of the formed spiral locus may have prescribed values. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an apparatus and method for performing processing such as removal and peeling of unnecessary materials, cleaning of a processing target surface, etc. on a processing target surface of a target including a semiconductor wafer. It is related to the control of a process for efficiently removing / cleaning an object. Specifically, a resist film deposited in the lithography process or a polymer deposited in the etching process on the surface of an object such as a semiconductor wafer, hard disk (HD), liquid crystal display (LCD) or flat panel display (FPD). The present invention relates to an apparatus and a method for removing / cleaning unnecessary materials such as residues.

  In the manufacturing process of a semiconductor device, a liquid crystal, a magnetic disk, a printed circuit board, and the like, a resist is applied to the surfaces of these objects, and precision processing such as pattern formation is performed on the surfaces of the objects using lithography and etching. Thereafter, a treatment for removing unnecessary materials such as a resist film and a polymer residue deposited on the surfaces of these objects is performed. Conventional techniques for removing unnecessary materials such as resist films include plasma ashing methods in which the resist film is removed by ashing with oxygen plasma, a method in which the film body is dissolved by heating with an organic solvent (a solvent such as a phenol or halogen), and concentrated. There was a heat dissolution method with sulfuric acid and hydrogen peroxide.

  However, in any of the above-described methods, time, energy and chemical materials for decomposing and dissolving the resist film and the like are required, and the burden on the process of decomposing and removing the resist film and the like is large. In addition, incidental facilities and control devices become complicated, resulting in increased size and cost, and many incidental facilities such as large amounts of chemicals, high-temperature chemical control, waste liquid, drainage, and environmental measures are required. Therefore, it has been unavoidable to adopt the conventional method as described above as the object processing apparatus for studying R & D and capital investment in the future.

Therefore, in the technical field where precision surface treatment is performed with the technology of removing unnecessary materials such as resist films as a prerequisite, we are moving away from conventional technologies that use chemical substances and chemical treatment, and have become a natural and environmentally friendly technology. There is an expectation that we will pay attention to the abundant methods of using water and water vapor and want to use and develop them. In relation to these, regarding an invention in which a water mist body (mist-like water) containing liquid water fine particles and a steam body (gaseous water) are mixed and provided to an object [Patent Document 1] [Patent Document 2] In addition, an invention for processing an object by controlling the nozzle operation and the stage operation of the processing apparatus is disclosed in [Patent Document 3].
JP 2003-249474 A JP 2003-332288 A JP 2004-153172 A

  Here, as an example of a conventional processing apparatus, a technique disclosed in [Patent Document 3] for processing an object by controlling a nozzle operation and a stage operation will be described. The technology in [Patent Document 3] is a so-called “10 Zone (10 zone) control” technology, in which the speed of the spray nozzle is set to 10 levels, and the processing surface of the semiconductor wafer to be processed is divided into 10 parts. The rotation of the stage on which the semiconductor wafer is placed is set and controlled as peripheral speed control.

Next, with reference to (1) and (2) of FIG. 7, the calculation sequence of the nozzle speed and the peripheral speed in the “10 Zone control” will be described.
<10Zone control nozzle speed calculation sequence>
(1) The area ratio for each zone obtained by dividing the wafer radius into 10 is calculated.
Zone1: Zone2: Zone31 ...... Zone10 = 1: 3: 5 ………… 19
(2) The product of process time is given to the area ratio for each zone.
Zone1 time = 1/100 × Total Process Time
::
Zone10 time = 19/100 × Total Process Time
(3) The nozzle moving speed (swing speed) is calculated from the time given to each Zone.
FIG. 7 (1) shows the “distance from the center of the wafer (mm)” and “swing speed (moving speed) for each zone (1 to 10) regarding the moving speed (nozzle speed) of the nozzle in“ 10 Zone control ”. ) (mm / sec) ".

<10Zone control peripheral speed calculation sequence>
The number of revolutions is determined by reading the radial position of the nozzle.
Formula: Wafer rotation speed = peripheral speed / (2 × π × radius)
FIG. 7B shows the relationship between “distance from the wafer center (mm)” and “rotational speed (rpm)” regarding the rotation of the wafer on the stage in “10 Zone control”.

  As described above, in the conventional “10 Zone control”, since the nozzle and the stage are divided and set, control is performed so that uniform processing can be performed over the entire processing surface of the wafer to be processed. I don't mean. For this reason, there is a problem in that uniform scanning cannot be performed over the entire processing surface, resulting in unevenness in the processing and inefficient processing.

  The present invention is based on the above-described prior art, and the nozzle can be controlled so that the surface of the object to be processed on the stage can be scanned more uniformly, so that the entire processing surface of the wafer can be processed evenly and uniformly. An object of the present invention is to provide an object processing apparatus and an object processing method capable of greatly improving processing accuracy and efficiency.

The object processing apparatus and method according to the present invention uses the following means in order to solve the above-mentioned problems.
(1) An object processing apparatus for performing a spraying process on an object having a processing target surface of a substantially circular plane,
A nozzle portion that sprays the processing target surface while moving between the central portion and the outer peripheral end of the processing target surface so as to face the processing target surface of the target object;
A stage unit on which the object is placed, and the center of the processing target surface is set as a rotation axis and rotates integrally with the object; and
Nozzle operation control means for controlling the movement speed and movement trajectory of the nozzle portion, and stage operation control means for controlling the rotation speed of the stage,
The trajectory of spraying on the object formed by the operation of the nozzle and the stage forms a spiral trajectory starting from the center of the processing target surface, and the peripheral speed and pitch width of the spiral trajectory are predetermined values. The object processing apparatus is characterized by including a trajectory control means for controlling as described above.

(2) In the object processing apparatus of (1),
The trajectory control means uses Archimedes' spiral type to continuously control the moving speed of the nozzle and the rotational speed of the object.
(3) In the object processing apparatus of (1),
The trajectory control means uses means for obtaining coordinates on the processing target surface by numerical calculation in order to continuously control the moving speed of the nozzle and the rotational speed of the object.
(4) In the object processing apparatus of (2) or (3),
The nozzle speed Vn (θ) when the nozzle linearly moves from the center of the object to the outer peripheral end is Vn (θ) = V / √ (θ ² +1), a stage that rotates integrally with the object. The rotational speed ω (θ) is controlled as ω (θ) = 60 V / P√ (θ ² +1), where V: peripheral speed, P: pitch width, and θ: angle.

(5) In an object processing method for performing a spraying process on an object having a processing target surface of a substantially circular plane,
A nozzle portion that sprays the processing target surface while moving between the central portion and the outer peripheral end of the processing target surface so as to face the processing target surface of the target object;
A stage unit on which the object is placed, and the center of the processing target surface is set as a rotation axis and rotates integrally with the object; and
By controlling the movement speed and trajectory of the nozzle part and the rotation speed of the stage,
The trajectory of spraying on the object formed by the operation of the nozzle and the stage forms a spiral trajectory starting from the center of the processing target surface, and the peripheral speed and pitch width of the spiral trajectory are predetermined values. Controlled as
The spiral trajectory is controlled using Archimedes' spiral type or numerical calculation of coordinates on the surface to be processed in order to continuously control the moving speed of the nozzle and the rotational speed of the object. A characteristic object processing method.

  In the object processing apparatus and the object processing method according to the present invention, the spraying trajectory formed by the nozzle moving operation and the stage rotating operation is formed as a spiral trajectory, and the formed spiral trajectory is an Archimedean spiral or process. A spiral trajectory starting from the center of the processing target surface is formed, and the peripheral speed and pitch width of the formed spiral trajectory are set to predetermined values. This makes it possible to draw a very accurate spiral in which nozzles pass over a target object such as a wafer with a constant interval and a constant speed. As a result, the spraying trajectory on the processing object such as a wafer can be made uniform, uniform or uniform over the entire surface, improving the processing capacity in the processing process of the object, improving work efficiency, reducing costs, etc. Can also contribute significantly. Further, the control according to the spiral trajectory according to the present invention is excellent in reproducibility and repeatability, easy to set parameters of the processing apparatus, and excellent in controllability.

  Next, an embodiment of an object processing apparatus and an object processing method according to the present invention will be described in detail with reference to FIGS. FIG. 1 is a structural diagram showing an object processing apparatus according to an embodiment of the present invention. Moreover, FIG. 2 is explanatory drawing about formation of the Archimedean spiral applied by this invention. FIG. 3 shows calculation formulas, calculation parameters and spirals used in pitching control in which the circumferential velocity and pitch width are controlled to be a predetermined value for the spiral trajectory formed by the apparatus and method of the present invention. FIG. 4 is a diagram showing an example of a simulation of wafer processing based on the method of pitching control interval calculation according to the present invention. Further, FIG. 5 is a photographic diagram showing a simulation drawing and a peeling experiment in one embodiment of the present invention, and FIG. 6 is a diagram showing control comparison by simulation in comparison with the prior art when the present invention is applied. It is.

FIG. 1 is a structural diagram showing an example of an object processing apparatus and an apparatus for carrying out the method according to the present invention.
In the apparatus 100 shown in FIG. 1, there is an object placement stage (rotary table) 22 that rotates integrally with a rotary shaft 24 that is held upward in conjunction with the rotation of the servo motor 13. A semiconductor wafer 20 as an object to be sprayed is placed. The object 20 has a circular flat shape or a circular flat plate shape as a whole, and all of the upper surface thereof is a processing target surface 20 ′ having a circular plane. However, although the target object 20 to be processed has the processing target surface 20 ′ having a substantially circular flat surface, the target object 20 itself may not have a substantially circular flat plate shape.

  Opposite to the processing target surface 20 ′ of the object 20, the nozzle portion 17 is disposed and set at a predetermined clearance (interval) from the nozzle outlet 17 ′ at the nozzle end. The spray body 18 is ejected downward from the surface of the object 20, and the processing target surface 20 ′ of the object 20 is processed. As the spray body 18, one composed of various liquids or gases appropriately selected may be used. As the spray body 18, a vapor body, that is, 1) steam (water vapor body), 2) dry steam ( Any of dry steam), 3) mist, or any mixture thereof may be used.

  With such a configuration of the processing apparatus 100, in the process of removing unnecessary materials such as resist, the stage 22 on which the wafer 20 is placed is rotated at a predetermined speed around the rotation shaft 24 (rotation arrow). 24 ′), the nozzle unit 17 is further stepped to move or scan the wafer 20 in the radial direction from the center of the wafer 20 (arrow d1 and arrow d2 indicating movement). The blowout body 18 is blown out from the blowout port 17 ′ on the front end side of the wafer 20 and sprayed as a spraying body onto the processing target surface 20 ′ of the wafer 20, and this surface is cleaned and the resist is peeled / removed.

The processing apparatus 100 includes a nozzle motor driver 11 for stepping (moving) the nozzle 17 and a stage motor driver 12 for rotating the stage. These are controlled by the controller 10. The The controller 10 calculates the movement operation of the nozzle and the rotation operation of the stage from the Archimedes formula, transmits the command from the motor driver to the motor, and drives it.
The stage motor driver 12 rotates a servo motor 13 connected thereto, and rotates a stage 22 connected to the servo motor 13. Then, the wafer 20 disposed on the stage 22 is also rotated together.

  Further, a stepping motor 14 is connected to the nozzle motor driver 11, and the rotation operation of the stepping motor 14 is a movement operation (movement arrow d1) of the nozzle connection support 16 connected via the guide rail 15. Is converted to Since the nozzle 17 is configured to have the nozzle 17 at the downward tip of the constituent member 16 ′ of the nozzle connection support 16, the nozzle 17 has the same direction / distance / speed as the previous movement operation (movement arrow d1). A moving operation (moving arrow d2) is performed. If the constituent member 16 ′ of the connection support 16 is configured as a pipe line, a passage for the fluid blown out from the nozzle 17 can be secured there.

FIG. 2 is a diagram for explaining the formation of the spiral in the Archimedes spiral type used in pitching control in which the peripheral velocity and the pitch width are controlled to be a predetermined value when forming the spiral trajectory in the present invention. FIG.
The Archimedean spiral is represented by an x coordinate: x = r cos θ, a y coordinate: y = rsin θ, and a distance from the center: r = αθ.
In FIG. 2 (1), if the angle formed by the tangent and the radius is ψ, tanψ = θ. Therefore, when A is taken on the OP perpendicular and OA = a, the angle PAO = ψ. PA is the normal to P. That is, Tan (angle PAO) = OP / OA = r / a = θ.
Also, when the intersection of perpendicular lines drawn from PA to OP and PA is Q and the intersection of OQ and PA is S, S is the center of curvature at P, and the radius of curvature R is R = (r ² + a ² ) ^3/2 / (r ² + 2a ² ).
As a property of the Archimedes spiral, the trajectory drawn by the object going outward from the center of the rotating disk at a constant speed becomes the Archimedes spiral, and an example in which the Archimedes spiral is formed is shown in FIG. ).

  FIG. 3 shows a pitching control in which the peripheral speed and the pitch width of the spiral trajectory formed on the object to be processed are controlled to a predetermined value in the apparatus or method according to the embodiment of the present invention. It is a figure which shows the calculation formula used, the parameter for calculation, and formation of a spiral. Further, the pitching control according to the present invention will be described by taking two examples: (1) a method by integral calculation using Archimedes spiral formula, and (2) a method by interval calculation in which coordinates are controlled by numerical calculation.

In the object processing apparatus or method shown in FIG. 3, the spraying trajectory on the object formed by the movement operation of the nozzle and the rotation operation of the stage has a predetermined value (here, a constant value). ) To be a spiral trajectory formed to be.
In FIG. 3, a semiconductor wafer is taken up as an example of an object in which a spiral trajectory is formed on an object surface to be processed. The data on the wafer displayed in FIG. 3 is as follows.
・ Wafer size (diameter): W = 8 inches (200 mm)
・ Pitching (pitch width): P = 10mm
・ Line speeding (peripheral speed): V = 100mm / sec
・ Stepping: 0.02
・ Processing time: 10.482 sec
・ Line length: 3144.21mm

Next, by using the calculation parameters shown in FIG. 3 and (1) a method based on <integration calculation> using Archimedes spiral formula as pitching control according to the present invention, nozzles from the center of the object to be processed to θ are processed. The movement distance, the movement time, the nozzle speed and the stage rotation speed at the angle θ are obtained, and the calculation process and the result are shown in [Formula 1] and the following [Formula 2].
In these formulas, when spraying the object, the nozzle velocity and rotation are calculated by calculating that the trajectory of the spray on the object formed by the movement operation of the nozzle and the rotation operation of the stage follows the Archimedes spiral formula. According to this, the nozzle speed Vn (θ) = V / √ (θ ² +1) and the rotational speed ω (θ) = 60 V / P√ (θ ² +1) were obtained. .

Furthermore, (2) a method based on <section calculation> in which the coordinates are controlled by numerical calculation as pitching control according to the present invention using the calculation parameters shown in FIG. 3 will be described.
The section calculation method is a method in which the moving section is subdivided and placed at each position, and the nozzle speed and the stage rotation speed are obtained by numerical calculation.

When θ _{0 is} the initial value,
From x ₀ = 0, y ₀ = 0, r ₀ = 0,
S ₀ = 0, t ₀ = 0
The initial nozzle speed is Vn = V [mm / sec]
The initial stage rotation speed is
ω ₀ = 60V / P [rpm]
And

In this <interval calculation> method, the accuracy of approximate calculation can be improved by taking a sufficiently large value for m. Therefore, the value of m can be made sufficiently large by a computer, each element i can be calculated, and the nozzle speed and stage rotation speed can be obtained with high accuracy.
The major difference between <interval calculation> and <integral calculation> is that in <interval calculation>: 1. Numerical calculation needs to divide an interval into sufficiently large m in advance and perform approximate calculation in each interval i. In addition, 2. It is necessary to select a sufficiently large m in order to improve accuracy, whereas <integral calculation> has a feature that the nozzle speed and the stage rotational speed can be accurately obtained for an arbitrary θ.

FIG. 4 shows an example of wafer processing simulation based on the method of <section calculation> of pitching control according to the present invention, and is calculated when m = 7500.
When the wafer size to be processed is 200 mm, the linear velocity is 30 mm / sec, and the pitch width is 2.0 mm, the integral calculation value has a processing time of 523.6356 seconds.
On the other hand, when m = 7500, it becomes 523.7034 seconds, and when m = 7500, a value close to the integral calculation value which is a true value is obtained.

  FIG. 5 (1) is an explanatory diagram showing an example of simulation (pitch width P = 10 mm, peripheral speed V = 100 mm / sec) on a wafer that has been sprayed by the apparatus or method of the present invention. FIG. 5 (2) is a photograph when a peeling experiment is performed on a wafer that has been subjected to a spraying process. On the processing surface of this wafer, the trajectory of spraying accompanying the movement of the nozzle and the rotation of the stage is It can be seen that the spiral pattern was formed by the pitching control according to the invention. In FIG. 5 (2), the member vertically cut in the vertical direction is a linear ruler with dimensions.

  FIG. 6 is an explanatory diagram showing an example in which control comparison is performed by simulation for the conventional technique (1) and the technique (2) according to the present invention. FIG. 6A is a diagram showing a trajectory of spraying by the conventional 10ZONE control. According to this, the positioning of the center of the object to be processed is uncertain, the pitch width is not uniform, there are gaps in the gaps around, and the control of the spray trajectory becomes inappropriate. Obviously. On the other hand, FIG. 6 (2) is a diagram showing the trajectory of spraying by the apparatus according to the present invention. According to this, the center of the object to be processed is positioned reliably, and the pitch width is All are even or uniform. As described above, it is clear that the spraying locus in FIG. 5 (2) according to the present invention is properly formed according to the Archimedean spiral type by the pitching control of the nozzle moving operation and the stage rotating operation. .

  The object processing apparatus and method according to the present invention provides a method for controlling the mechanical operation of the nozzle and the stage used in the peeling / cleaning process of an object to be processed such as a wafer. In the field of process control such as peeling and cleaning, great utilization is expected. Specifically, the silicon / oxide film and metal interface treatment process control method, the organic substance / resist / polymer product etc., the peeling cleaning process control method, the process control method used in the post-treatment process after the semiconductor dry etching treatment, etc. The present invention can be applied to a wide range of industrial fields, and its effect is very great.

It is a figure which shows the structure of the target object processing apparatus concerning one Embodiment of this invention. It is a figure for demonstrating formation of the Archimedean spiral applied by this invention. It is a figure which shows the formation of the calculation formula used for the pitching control in which the circumferential velocity and pitch width | variety controlled by this invention are controlled so that it may become a predetermined value, the parameter for calculation, and a spiral. It is a figure which shows the example of the wafer process based on the method by the area calculation of the pitching control by this invention. In one Embodiment of this invention, it is a photograph figure which shows one example of drawing for simulation and peeling experiment. It is the figure which showed the control comparison by simulation at the time of applying this invention by contrast with the prior art. It is explanatory drawing for showing the target object processing apparatus by the past.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 Object processing apparatus 10 Controller 11 Nozzle motor driver 12 Stage motor driver 13 Servo motor 14 Stepping motor 15 Guide rail 16 Nozzle connection support 16 'Constituent member of nozzle connection support 16 17 Nozzle part 17' Outlet 18 Spraying body 20 Semiconductor wafer (object)
20 'target surface 22 stage (rotary table)
24 Rotating shaft 24 ′ Arrows indicating rotational motion d1, d2 Arrows indicating moving motion

Claims (5)

An object processing apparatus for performing a spraying process on an object having a processing target surface of a substantially circular plane,
A nozzle portion that sprays the processing target surface while moving between the center portion and the outer peripheral end of the processing target surface so as to face the processing target surface of the target object;
A stage unit for placing the object and performing a rotation operation integrally with the object with the center of the processing target surface as a rotation axis;
Nozzle operation control means for controlling the movement speed and movement trajectory of the nozzle part, and stage operation control means for controlling the rotation speed of the stage,
The trajectory of spraying on the object formed by the operation of the nozzle and the stage forms a spiral trajectory starting from the center of the processing target surface, and the peripheral speed and pitch width of the spiral trajectory formed An object processing apparatus comprising trajectory control means for controlling so that the value becomes a predetermined value. The object processing apparatus according to claim 1,
2. The object processing apparatus according to claim 1, wherein the trajectory control means uses an Archimedean spiral to continuously control the moving speed of the nozzle and the rotational speed of the object. The object processing apparatus according to claim 1,
The trajectory control means uses means for calculating the coordinates on the processing target surface by numerical calculation in order to continuously control the moving speed of the nozzle and the rotational speed of the target object. Processing equipment. The object processing apparatus according to claim 2 or 3,
The nozzle speed Vn (θ) when the nozzle moves linearly from the center of the object to the outer peripheral end is Vn (θ) = V / √ (θ ² +1), and rotates integrally with the object. The rotational speed ω (θ) of the stage is controlled as ω (θ) = 60 V / P√ (θ ² +1), where V: peripheral speed, P: pitch width, θ: angle. Feature object processing apparatus. In the object processing method for performing a spraying process on an object having a processing target surface of a substantially circular plane,
A nozzle portion that sprays the processing target surface while moving between the center portion and the outer peripheral end of the processing target surface so as to face the processing target surface of the object;
A stage unit for placing the object and performing a rotation operation integrally with the object with the center of the processing target surface as a rotation axis;
By controlling the movement speed and movement trajectory of the nozzle part and the rotation speed of the stage,
The trajectory of spraying on the object formed by the operation of the nozzle and the stage forms a spiral trajectory starting from the center of the processing target surface, and the peripheral speed and pitch width of the spiral trajectory are predetermined. Controlled to be a value,
The spiral trajectory is controlled by using Archimedes spiral or numerical calculation of coordinates on the processing target surface in order to continuously control the moving speed of the nozzle and the rotational speed of the object. Object processing method.

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