JP2006126213A - Sensor system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a sensor system capable of miniaturization in size and reducing the temperature drift. <P>SOLUTION: The sensor system 101 is provided with a sensor device 10 and an integrated circuit 20 for driving the sensor device 10. The sensor device 10 is provided with the sensor main body 1 of silicon based material, an upper sealer 2, and a lower sealer 3 of the same silicon based material. The integrated circuit 20 for driving the sensor device 10 forms a laminate together with the sensor device 10. The sensor main body 1 is electrically connected with the wiring pattern 12 of the integrated circuit 20 through the through electric way 4 passing the upper sealer 2 and the electrode 5 for mounting provided on the external surface of the upper sealer 2. The sensor device 10 is connected with the MID substrate 30 through the integrated circuit 20. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a sensor system including a sensor device and an integrated circuit for driving the sensor device, and more particularly to a sensor system that can reduce temperature drift in sensor characteristics and can be downsized.

  A micro system in which micro-sized sensors, actuators, and the like using micro-machine technology based on semiconductor processes and their drive circuits (including control circuits) are integrated is referred to as MEMS (Micro Electro Mechanical System). .

  FIG. 12 is a side cross-sectional view of a conventional sensor system formed as a MEMS. The sensor system 150 includes a ceramic substrate 70, a sensor device 74, an integrated circuit 75, a mounting external electrode 77, and a sealing material 78. The ceramic substrate 70 has a wiring pattern 76.

  The sensor device 74 is an angular velocity sensor, and includes a sensor main body 71 made of silicon as a base material, an upper sealing body 72 made of glass, and a lower sealing body 73 also made of glass. The upper sealing body 72 and the lower sealing body 73 are members that house the sensor main body 71 in an airtight manner. The integrated circuit 75 is a drive circuit that drives (including control) the sensor device 74, and is connected to the wiring pattern 76 on the ceramic substrate 70 through bumps in the form of a bare chip. That is, the integrated circuit 75 is flip-chip mounted on the ceramic substrate 70. The sensor device 74 is also mounted on the ceramic substrate 70 in the same manner as flip chip mounting. The sensor device 74 and the integrated circuit 75 are sealed with a resin sealing material 78. The sensor system 150 can be mounted on an external circuit board or the like through the mounting external electrode 77 connected to the wiring pattern 76. Thus, the sensor system 150 can be handled as if it were one integrated circuit.

As for the sensor device 74, as disclosed in Patent Document 1, the technology for sealing the sensor main body 71 based on silicon with the upper sealing body 72 and the lower sealing body 73 made of glass is as follows. This is a technique commonly used in this field. However, there is a problem that the difference in coefficient of thermal expansion is large between silicon and glass, and the sensor main body 71 is distorted as the temperature changes. This distortion has caused a temperature drift in the characteristics of the sensor by changing the resonance frequency of the sensor main body 71 or the like. Furthermore, since the sensor system 150 is mounted so that the sensor device 74 and the integrated circuit 75 are arranged side by side, there is a limit to downsizing the system.
JP 2001-153881 A

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a sensor system that can reduce temperature drift in sensor characteristics and can be downsized.

In order to solve the above problems and achieve the above object, the first aspect of the present invention provides:
A lower sealing body formed from one wafer, a sensor main body formed from a wafer different from the one wafer, and a wafer further formed from the one wafer and the other wafer. A sensor system comprising: an upper sealing body; a sensor device obtained by individually cutting the three wafers after bonding; and an integrated circuit for driving the sensor device, The lower sealing body, the sensor body portion, and the upper sealing body of the sensor device are made of the same material, and the integrated circuit is connected to the sensor device to form a stacked body. An external electrode for mounting is provided.

  According to a second aspect of the present invention, there is provided a sensor system according to the first aspect, wherein the material is a semiconductor.

  According to a third aspect of the present invention, there is provided a sensor system according to the first or second aspect, wherein the mounting external electrode is a side of the surface of the integrated circuit that faces the sensor device. Are provided on the opposite side, and the integrated circuit has an integrated circuit board on which a circuit for driving the sensor device is formed, and the mounting external electrode and the sensor by sandwiching the side surface of the integrated circuit board. A second wiring pattern for electrically connecting the device is further provided.

  According to a fourth aspect of the present invention, there is provided a sensor system according to the first or second aspect, wherein the mounting external electrode is a surface of the sensor device facing the integrated circuit. Is provided on the opposite side, and the sensor device electrically connects the mounting external electrode and the integrated circuit by sandwiching the side surface of the upper sealing body and the side surface of the lower sealing body. A second wiring pattern is further provided.

  In the sensor system of the present invention, since the lower sealing body, the sensor main body, and the upper sealing body in the sensor device are made of the same material, there is no difference in thermal expansion coefficient between these members. For this reason, the temperature drift resulting from the difference in the thermal expansion coefficient between these members is suppressed in the sensor system. In addition, the sensor system can be miniaturized because the sensor device and the integrated circuit are in a stacked state.

(First embodiment)
FIG. 1 is a cross-sectional view showing a configuration of a sensor system according to a first embodiment of the present invention. FIG. 1A is a vertical cross-sectional view of the sensor system, and FIG. 1B is a cross-sectional view taken along the line AA in FIG. The sensor system 101 is formed as a MEMS, and includes a sensor device 10, an integrated circuit 20, a MID (Molded Interconnect Device) substrate 30, a mounting external electrode 31, and a sealing material 32. The sensor device 10 is, for example, an angular velocity sensor, and includes a sensor main body 1 that uses silicon as a base material, an upper sealing body 2 that also uses silicon as a base material, and a lower sealing body 3 that also uses silicon as a base material. ing. The phrase “based on silicon” is intended to include silicon doped with impurities.

  The upper sealing body 2 and the lower sealing body 3 are bonded to each other so that the sensor main body 1 is hermetically accommodated in a cavity formed therein. The upper sealing body 2 and the lower sealing body 3 can be bonded using a well-known silicon substrate bonding technique. A mounting electrode 5 for mounting the sensor device 10 is provided on the outer surface of the upper sealing body 2. The mounting electrode 5 is a bump electrode, for example, and is electrically connected to the sensor main body 1 by a through electrical path 4 that is a conductor that penetrates the upper sealing body 2.

  The lower sealing body 3 includes a substrate-like member 35 and a frame-like member 36 joined thereto. The substrate-like member 35 can be formed from one wafer, the sensor body 1 and the frame-like member 36 can be formed from another wafer, and the upper sealing body 2 can be formed from another wafer. The sensor device 10 can be obtained by performing processing for forming the through-electric path 4 on each wafer, joining the three wafers by bonding, for example, and then cutting them into individual chips. In each figure after FIG. 1, the frame-shaped member 36 is included in the lower sealing body 3, but may be included in the upper sealing body 2.

  The integrated circuit 20 is a drive circuit that drives (including control) the sensor device 10 and is connected to the sensor device 10 through the mounting electrodes 5 in the form of a bare chip to form a two-layer laminate. The integrated circuit 20 includes a chip body 11 that is an integrated circuit substrate, and a wiring pattern 12 formed on one main surface thereof, and the mounting electrode 5 is connected to the wiring pattern 12. The stacked body of the sensor device 10 and the integrated circuit 20 is supported by the MID substrate 30 in a state of being inserted into a recess provided in the MID substrate 30. Further, the laminate is sealed with a sealing material 32 such as a resin.

  The MID substrate (three-dimensional circuit forming substrate) 30 includes a substrate body 21 made of an insulator formed by molding a resin or the like, and a wiring pattern 22 disposed on the surface thereof. . An external electrode 31 for mounting for mounting the sensor system 101 on an external circuit board is connected to the wiring pattern 22. The wiring pattern 12 of the integrated circuit 20 is connected to the wiring pattern 22 through a mounting electrode 23 for mounting the integrated circuit 20. Thereby, the laminate and the mounting external electrode 31 are electrically connected. The mounting electrode 23 is, for example, a bump electrode. In this way, the sensor system 101 can be handled as if it were one integrated circuit.

  As described above, in the sensor system 101, the sensor main body 1 is housed and fixed by the upper sealing body 2 and the lower sealing body 3 having the same material as that of the sensor system 101. There is no difference in thermal expansion coefficient. For this reason, the temperature drift of the sensor characteristic resulting from the difference of the thermal expansion coefficient between the structural members of the sensor apparatus 10 is eliminated. Since the integrated circuit 20 and the upper sealing body 2 are interposed between the sensor main body 1 and the MID substrate 30, temperature drift due to the difference in thermal expansion coefficient between the MID substrate 30 and the sensor device 10 is also low. It can be suppressed. Thereby, highly accurate sensor characteristics can be obtained.

  Moreover, since the sensor main body 1 and the mounting electrode 5 are connected by the through-electric path 4 penetrating the upper sealing body 2, the sensor device 10 realizes the same form as the flip chip of the integrated circuit. The sensor device 10 is reduced in size without spreading horizontally. Since the upper sealing body 2 uses silicon as a base material, it can be finely processed in the same manner as the sensor main body 1, which facilitates the formation of the through current path 4.

  Furthermore, since the sensor device 10 and the integrated circuit 20 form a stacked body, the sensor system 101 can be formed in a small size. The integrated circuit 20 is mounted on the MID substrate 30 in the form of a flip chip, which also contributes to the downsizing of the sensor system 101.

  Further, since the MID substrate 30 is used, the mounting external electrode 31 can be easily formed. Further, as shown in FIG. 1, the mounting external electrode 31 is formed as a pin bent in a staircase shape, so that the circuit board (for example, a motherboard) on which the sensor system 101 is mounted and the sensor system 101 are arranged. The thermal strain generated in the sensor system 101 due to the difference in thermal expansion coefficient is reduced. Thereby, the influence of the thermal strain on the sensor characteristics is further suppressed.

  FIG. 2 is a manufacturing process diagram illustrating a process of forming the through-electric path 4 in the upper sealing body 2. In order to form the through current path 4 in the upper sealing body 2, first, the through hole 42 is formed in the upper sealing body 2 by using, for example, ICP, and then the silicon dioxide insulating film 41 is formed by, for example, thermal oxidation. It forms on the surface of the sealing body 2 (FIG. 2 (a)). Next, by using CVD (Chemical Vapor Deposition), a conductor 43 such as copper is deposited on the surface of the upper sealing body 2 (FIG. 2B). The conductor 43 may be a metal other than copper, or may be polycrystalline silicon doped with impurities. Thereafter, for example, copper plating is performed to deposit the conductor 44, thereby filling the through hole 42 with the conductor 44 (FIG. 2C). CVD may be used instead of copper plating. Next, for example, metal RIE (reactive ion etching) is performed using a mask pattern, and wiring patterns (including pads) 46 and 47 are formed by selectively removing the conductor 44 (FIG. 2D). )).

  Thus, the through-electric path 4 can be easily formed in the upper sealing body 2 by combining known semiconductor processes. 2C, the through hole 42 can be easily embedded with the conductor 44, so that the upper sealing body 2 and the lower sealing body 3 are disposed inside to accommodate the sensor main body 1. The storage chamber formed can be easily kept airtight, and in particular, can be kept at a high vacuum. Thereby, the sensor device 10 with good quality can be obtained. Furthermore, since the insulating film 41 is formed on the surface of the upper sealing body 2, the upper sealing body 2 made of silicon as a base material and the through current path 4 are electrically insulated well. Thereby, a highly accurate sensor device 10 is obtained.

  Further, as shown in FIG. 2D, the lower sealing body 3 can be easily bonded to the lower sealing body 3 by forming the lower surface of the upper sealing body 2 flat. In addition, instead of the upper sealing body 2 or in combination therewith, it is possible to form the through-electric path 4 in the lower sealing body 3.

  In addition, the sensor main body 1, the upper sealing body 2, and the lower sealing body 3 may be semiconductors other than a silicon-based material. However, among many semiconductors, a technique for performing microfabrication is widely established for silicon, and the material is also low in cost, so that a silicon-based material is particularly desirable. Further, even if the sensor body 1, the upper sealing body 2, and the lower sealing body 3 are not made of a semiconductor material, the temperature drift problem caused by the difference in thermal expansion coefficient can be solved if the materials are the same. Is done. However, by using a semiconductor as a material, microfabrication can be easily performed using a semiconductor process, and the highly accurate and small sensor device 10 and sensor system 101 can be easily obtained.

(Second Embodiment)
FIG. 3 is a longitudinal sectional view showing a configuration of a sensor system according to the second embodiment of the present invention. In addition, in the following drawings, the same part as FIG. 1 thru | or the part which fulfill | performs the same function attaches | subjects the same code | symbol, and abbreviate | omits detailed description. The sensor system 102 shown in FIG. 3 is mainly different from the sensor system 101 of FIG. 1 in that the MID substrate 30 is formed so as to be interposed between the sensor device 10 and the integrated circuit 20 stacked on each other. ing. The sensor device 10 is connected to the wiring pattern 22 through the mounting electrode 5, and the integrated circuit 20 is connected to the wiring pattern 22 through the mounting electrode 23. The MID substrate 30 is provided with an opening 25, and the wiring pattern 22 is also provided in the opening 25. Thereby, the MID substrate 30 also relays the electrical connection between the sensor device 10 and the integrated circuit 20. Further, at least one of the sensor device 10 and the integrated circuit 20 is connected to the mounting external electrode 31 through the wiring pattern 22. FIG. 3 shows an example in which both the sensor device 10 and the integrated circuit 20 are connected to the mounting external electrode 31.

  As described above, in the sensor system 102, like the sensor system 101, the sensor main body 1 is housed and fixed by the upper sealing body 2 and the lower sealing body 3 that are made of the same material as that of the sensor main body 1. Therefore, the temperature drift of the sensor characteristic resulting from the difference in thermal expansion coefficient between the constituent members of the sensor device 10 is eliminated. In addition, since the sensor device 10 and the integrated circuit 20 are in a stacked state via the MID substrate 30, the sensor system 102 can be formed in a small size. The sensor device 10 and the integrated circuit 20 are mounted on the MID substrate 30 in the form of a flip chip, which also contributes to the downsizing of the sensor system 102. Further, since the MID substrate 30 is used, the mounting external electrode 31 can be easily formed. Furthermore, unlike the sensor system 101, the mounting external electrode 31 is formed as a bump electrode, so that the mounting area of the sensor system 102 on a circuit board such as a mother board can be further reduced.

  In the manufacturing process of the sensor system 102, preferably, the connection between the sensor device 10 and the MID substrate 30 via the mounting electrode 5 and the connection between the integrated circuit 20 and the MID substrate 30 via the mounting electrode 23 are: Performed at room temperature. For example, the connection at normal temperature can be performed by pressing while activating the electrode surface using plasma. Here, normal temperature should just be the temperature within the use temperature range (for example, 0 degreeC-+80 degreeC etc.) as a rating of the sensor system 102. FIG. Accordingly, it is possible to suppress or eliminate the thermal stress from remaining in the completed sensor system 102, and to suppress deterioration in sensor quality of the sensor device 10.

(Third embodiment)
FIG. 4 is a longitudinal sectional view showing a configuration of a sensor system according to the third embodiment of the present invention. This sensor system 103 is mainly different from the sensor system 101 shown in FIG. 1 in that the base end portion of the mounting external electrode 31 is embedded in the substrate main body portion 21 of the MID substrate 30. Also in the sensor system 103, as in the sensor system 101, the mounting external electrode 31 is formed as a pin bent in a staircase shape, so that heat between the circuit board on which the sensor system 103 is mounted and the sensor system 103 is formed. The thermal strain generated in the sensor system 103 due to the difference in the expansion coefficient is reduced, and the deterioration of the sensor characteristics due to the thermal strain is suppressed.

  In order to embed the mounting external electrode 31 in the substrate main body 21, a lead frame (not shown) for connecting a large number of mounting external electrodes 31 is prepared, and the material of the substrate main body 21 such as resin is molded together with the lead frame. (Mold). After the molding of the substrate body 21 is completed, the mounting external electrode 31 is separated from the lead frame, and further formed in a step shape, whereby the mounting external electrode 31 having the shape of FIG. 4 can be easily obtained.

(Fourth embodiment)
FIG. 5 is a longitudinal sectional view showing a configuration of a sensor system according to the fourth embodiment of the present invention. In the sensor system 104, as in the sensor system 101 shown in FIG. 1, the sensor device 10 and the integrated circuit 20 are connected via the MID substrate 30 to form a laminated body. However, the sensor system 104 is mainly different from the sensor system 101 shown in FIG. 1 in that the mounting external electrode 31 is provided in the sensor device 10. That is, the sensor system 104 does not require the MID substrate 30. In the example of FIG. 5, the mounting external electrode 31 is connected to the wiring pattern 12 of the integrated circuit 20 through the through electrical path 51 and the mounting electrode 5 that penetrate the upper sealing body 2 and the lower sealing body 3. In the manufacturing process of the sensor system 104, the through electric circuit 51 is easily and integrally connected by a pressing force applied when the upper sealing body 2 and the lower sealing body 3 are bonded to each other.

  As described above, since the sensor system 104 does not require the MID substrate 30, it can be further reduced in size, and the mounting area on the circuit board can be further reduced. In addition, since the sensor system 104 does not require the MID substrate 30, there is no problem of thermal stress due to the difference in thermal expansion coefficient between the MID substrate 30 and the sensor device 10. That is, the deviation of the sensor characteristic from the design value and the temperature drift of the sensor characteristic during use are further suppressed, and a higher quality sensor characteristic can be obtained.

(Fifth embodiment)
As shown as the sensor system 105 in FIG. 6, the mounting external electrode 31 in the sensor system 104 may be provided on the integrated circuit 20A side. In the example of FIG. 6, the external electrode 31 is connected to the wiring pattern 12 by a through-electric path 52 that penetrates the integrated circuit 20A. In this embodiment, the above-described advantages described for the sensor system 104 can be obtained as well.

(Sixth embodiment)
FIG. 7 is a longitudinal sectional view showing the configuration of the sensor device according to the sixth embodiment of the present invention. In the sensor device 10A, the upper sealing body 2 is formed as an integrated circuit substrate, that is, a chip body 81, and the wiring pattern 60 is formed so as to cover the bonding surface of the chip body 81 instead of the through-electric path 4. Is different from the sensor device 10 shown in FIG. 1 or the like in that the sensor body 1 and the mounting electrode 5 are electrically connected. A circuit (not shown) for driving the sensor body 1 is formed in the chip body 81. The chip body 81 and the wiring pattern 60 constitute an integrated circuit.

  The wiring pattern 60 includes a wiring pattern 61 disposed on the inner main surface of the chip body 81, a wiring pattern 62 disposed on the side surface of the chip body 81, and a wiring disposed on the outer main surface of the chip body 81. Pattern 63 is included. The wiring patterns 61, 62 and 63 are connected to each other. The sensor main body 1 is electrically connected to the wiring pattern 61. The mounting electrode 5 is formed on the wiring pattern 63. The wiring pattern 61 is also disposed on the joint surface of the chip body 81 with the opposed lower sealing body 3, thereby providing an electrical connection between the sensor body 1 and the mounting electrode 5 without the through-electric path 4. Realized.

  In the sensor device 10A, the chip body 81 as the upper sealing body 2 is joined to the lower sealing body 3 with the wiring pattern 61 sandwiched at least in part. In this specification, it expresses that the lower sealing body 3 and the upper sealing body 2 (chip body 81) are joined also including this form.

  FIG. 8 is a manufacturing process diagram showing a process of disposing the wiring pattern 60 on the chip body 81. 8A, 8C, 8E, and 8G are longitudinal sectional views of the chip body 81 in each process, and FIGS. 8B, 8D, 8F, and 8H are FIGS. FIG. 8 is a side view of the chip body 81 in each corresponding process. Each vertical cross-sectional view corresponds to a cross-sectional view taken along the line BB in the side view of the same row.

  In order to arrange the wiring pattern 60, first, a chip body 81 on which a circuit is formed through a known semiconductor process is prepared (FIGS. 8A and 8B). The chip body 81 is preferably before being cut out from the wafer from the viewpoint of facilitating the manufacturing process, but may be after being cut out. Next, the plating base layer 65 is formed on the entire surface of the chip body 81 (FIGS. 8C and 8D). The plating base layer 65 is formed, for example, by sputtering aluminum. The plating underlayer 65 is formed to a thickness of about 1 μm, for example.

  Next, the plating foundation layer 65 is patterned by selectively removing the plating foundation layer 65 (FIGS. 8E and 8F). The selective removal of the plating underlayer 65 can be achieved, for example, by selectively irradiating a laser beam. Alternatively, the plating underlayer 65 may be selectively removed by using photolithography. Next, the product after the steps of FIGS. 8E and 8F is immersed in, for example, a plating solution and a current is passed through to form a wiring pattern 60 on the patterned plating base layer 66 (see FIG. 8E). FIG. 8 (g), (h)). The wiring pattern 60 is made of, for example, nickel and is formed to a thickness of about 10 μm, for example.

In FIG. 8H, of the wiring pattern 60 divided into three regions, for example, if the region occupying the center is unnecessary, patterning is performed so that this portion is isolated from other portions. Good. As a result, no current flows in the central region in the plating process, and therefore the formation of the wiring pattern 60 in the central region can be prevented. It is also possible to prevent the wiring pattern 60 from being formed in the central region by patterning the plating base layer 65 so that the plating base layer 66 does not remain in the central region. However, in the case of patterning using a laser beam, it is desirable to reduce the area to be irradiated with the laser beam in order to increase the throughput. Further, even if the central region is an unnecessary region, if the wiring pattern 60 formed in this region does not hinder the operation of the circuit, the wiring pattern 60 is formed in this region as shown in FIG. There is no problem even if it is formed.

  Next, returning to FIG. 7, the mounting electrode 5 is formed on the wiring pattern 63 which is a part of the wiring pattern 60. Thereafter, the chip body 81 as the upper sealing body 2 and the lower sealing body 3 are bonded together, for example, by bonding, thereby obtaining the sensor device 10A shown in FIG.

  As described above, since the sensor device 10A uses the chip main body 81 as the upper sealing body 2, functions equivalent to those of the sensor system 104 of FIG. 5 and the like are realized without requiring the integrated circuit 20 or 20A separately. That is, the sensor device 10A realizes downsizing of the sensor system. Further, the sensor main body 1 and the mounting electrode 5 are electrically connected by the wiring pattern 60 formed so as to cover the bonding surface without requiring the through electric circuit 4, so that the through electric circuit 4 is formed. This space is useless. This contributes to further downsizing of the sensor system. Further, since the wiring pattern 60 that is easier to dispose than the through-electric path 4 is used, the manufacturing cost is reduced.

  Note that the through-electric path 4 may be formed in the chip body 81 instead of the wiring pattern 60. Also in this form, the advantage by using the chip body 81 as the upper sealing body 2 can be obtained similarly. Further, a circuit may be formed not only on the upper sealing body 2 but also on the lower sealing body 3 in the same manner as the chip body 81.

(Seventh embodiment)
FIG. 9 is a longitudinal sectional view showing a configuration of a sensor system according to the seventh embodiment of the present invention. The sensor system 106 includes the sensor body 1 and the mounting electrode 5 by a wiring pattern 60 formed so as to cover the joint surface of the upper sealing body 2 with the opposing lower sealing body 3 instead of the through-electric path 4. Are different from the sensor system 105 shown in FIG. 6 in that they are electrically connected. Unlike the chip body 81 shown in FIG. 7, the upper sealing body 2 is a sealing body in which no circuit is built. That is, the sensor device 10B is different from the sensor device 10A shown in FIG. 7 in that the upper sealing body 2 is not the chip body 81. The wiring pattern 60 can be disposed on the upper sealing body 2 through a process similar to the process shown in FIG.

  As described above, in the sensor system 106, the sensor main body 1 and the mounting electrode 5 are electrically connected by the wiring pattern 60 formed so as to cover the bonding surface without requiring the through-electric path 4. Since the electric circuit 4 is formed, a space is unnecessary. Thereby, the sensor system 106 can be formed in a small size. Further, since the wiring pattern 60 that is easier to dispose than the through-electric path 4 is used, the manufacturing cost is reduced.

(Eighth embodiment)
FIG. 10 is a longitudinal sectional view showing a configuration of a sensor system according to the eighth embodiment of the present invention. In this sensor system 107, the sensor device 10 </ b> C crawls the side surface of the upper sealing body 2 and the side surface of the lower sealing body 3 in place of the through-electric path 51 penetrating the upper sealing body 2 and the lower sealing body 3. This is different from the sensor system 104 shown in FIG. 5 in that the wiring pattern 65 for electrically connecting the mounting external electrode 31 and the integrated circuit 20 is provided. The wiring pattern 65 can be easily formed by performing the process of FIG. 8 as if the laminated body of the upper sealing body 2 and the lower sealing body 3 joined to each other is used as the chip body 81.

  As described above, the sensor system 107 is integrated with the mounting external electrode 31 by the wiring pattern 65 formed so as to crawl the side surfaces of the upper sealing body 2 and the lower sealing body 3 without requiring the through-electric path 51. Since the circuit 20 is electrically connected, a space for forming the through-electric path 51 is unnecessary. Thereby, the sensor system 107 can be formed in a small size. In addition, since the wiring pattern 65 that is easier to arrange as compared with the through-circuit 51 is used, the manufacturing cost is reduced.

(Ninth embodiment)
FIG. 11 is a longitudinal sectional view showing a configuration of a sensor system according to the ninth embodiment of the present invention. In the sensor system 109, the integrated circuit 20 </ b> B includes a wiring pattern 67 that electrically connects the mounting external electrode 31 and the sensor device 10 </ b> B by scratching the side surface of the chip body 11, and penetrates the chip body 11. 9 is different from the sensor system 106 shown in FIG. 9 in that the through electric circuit 52 is removed. Of the wiring pattern 67, the portion disposed on the main surface of the chip body 11 that faces the sensor device 10 </ b> B is disposed in the same manner as the wiring pattern 12 illustrated in FIG. 9. The wiring pattern 67 can be easily formed by performing the process of FIG. 8 with the chip body 11 as if it were the chip body 81.

  As described above, in the sensor system 108, the mounting external electrode 31 and the sensor device 10B are electrically connected by the wiring pattern 67 formed so as to crawl the side surface of the chip body 11 without requiring the through-electric path 52. Therefore, a space for forming the through-electric path 52 is unnecessary. Thereby, the sensor system 108 can be formed in a small size. In addition, since the wiring pattern 67 that is easier to arrange as compared with the through-circuit 52 is used, the manufacturing cost is reduced.

It is a longitudinal section showing the composition of the sensor system by a 1st embodiment of the present invention. It is a manufacturing process figure which shows the process of forming a penetration electric circuit in the upper sealing body of FIG. It is a longitudinal cross-sectional view which shows the structure of the sensor system by the 2nd Embodiment of this invention. It is a longitudinal cross-sectional view which shows the structure of the sensor system by the 3rd Embodiment of this invention. It is a longitudinal cross-sectional view which shows the structure of the sensor system by the 4th Embodiment of this invention. It is a longitudinal cross-sectional view which shows the structure of the sensor system by the 5th Embodiment of this invention. It is a longitudinal cross-sectional view which shows the structure of the sensor apparatus by the 6th Embodiment of this invention. FIG. 8 is a manufacturing process diagram illustrating a process of arranging a wiring pattern on the chip body of FIG. 7. It is a longitudinal cross-sectional view which shows the structure of the sensor system by the 7th Embodiment of this invention. It is a longitudinal cross-sectional view which shows the structure of the sensor system by the 8th Embodiment of this invention. It is a longitudinal cross-sectional view which shows the structure of the sensor system by the 9th Embodiment of this invention. It is a longitudinal cross-sectional view which shows the structure of the sensor system by a prior art.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Sensor main-body part 2 Upper sealing body 3 Lower sealing body 4 Through electrical circuit 5, 23 Mounting electrode 10, 10A, 10B, 10C Sensor apparatus 11 Chip body (integrated circuit board)
DESCRIPTION OF SYMBOLS 12 Wiring pattern 20, 20A, 20B Integrated circuit 30 MID board 31 Mounting external electrode 41 Insulating film 42 Through-hole 43, 44 Conductor 60 Wiring pattern 65 Plating underlayer 67 Wiring pattern 81 Chip body (integrated circuit board)
101-108 sensor system

Claims (4)

A lower sealing body formed from one wafer, a sensor main body formed from a wafer different from the one wafer, and a wafer further formed from the one wafer and the other wafer. A sensor system comprising: an upper sealing body; a sensor device obtained by individually cutting the three wafers after bonding; and an integrated circuit for driving the sensor device;
The lower sealing body, the sensor main body and the upper sealing body of the sensor device are the same material,
A sensor system, wherein the integrated circuit is connected to the sensor device to form a laminated body, and an external electrode for mounting is provided on the laminated body. The sensor system according to claim 1, wherein the material is a semiconductor. The mounting external electrode is provided on the side of the surface of the integrated circuit opposite to the side facing the sensor device;
An integrated circuit board on which a circuit for driving the sensor device is formed, and the mounting external electrode and the sensor device are electrically connected to each other by sandwiching a side surface of the integrated circuit board. The sensor system according to claim 1, further comprising two wiring patterns. The mounting external electrode is provided on the opposite side of the surface of the sensor device from the side facing the integrated circuit,
The sensor device further includes a second wiring pattern that electrically connects the mounting external electrode and the integrated circuit by sandwiching a side surface of the upper sealing body and a side surface of the lower sealing body. The sensor system according to claim 1 or 2, characterized by the above.

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